Controlled Doping of Vacancy-Containing Few-Layer MoS2 via Highly Stable Thiol-Based Molecular Chemisorption

Controllable p-type doping and improved conductance of few-layer WSe2via Lewis acid

Manipulation of the electronic properties of layered transition-metal dichalcogenides (TMDs) is of fundamental significance for a wide range of electronic and optoelectronic applications. Surface charge transfer doping is considered to be a powerful technique to regulate the carrier density of TMDs. Herein, the controllable p-type surface modification of few-layer WSe2by FeCl3Lewis acid with different doping concentrations have been achieved. Effective hole doping of WSe2has been demonstrated using Raman spectra and XPS. Transport properties indicated the p-type FeCl3surface functionalization significantly increased the hole concentration with 1.2 × 1013cm-2, resulting in 6 orders of magnitude improvement for the conductance of FeCl3-modified WSe2compared with pristine WSe2. This work provides a promising approach and facilitate the further advancement of TMDs in electronic and optoelectronic applications.

Role of growth temperature on microstructural and electronic properties of rapid thermally grown MoTe2thin film for infrared detection

In the field of electronic and optoelectronic applications, two-dimensional materials are found to be promising candidates for futuristic devices. For the detection of infrared (IR) light, MoTe2possesses an appropriate bandgap for which p-MoTe2/n-Si heterojunctions are well suited for photodetectors. In this study, a rapid thermal technique is used to grow MoTe2thin films on silicon (Si) substrates. Molybdenum (Mo) thin films are deposited using a sputtering system on the Si substrate and tellurium (Te) film is deposited on the Mo film by a thermal evaporation technique. The substrates with Mo/Te thin films are kept in a face-to-face manner inside the rapid thermal-processing furnace. The growth is carried out at a base pressure of 2 torr with a flow of 160 sccm of argon gas at different temperatures ranging from 400 °C to 700 °C. The x-ray diffraction peaks appear around 2θ= 12.8°, 25.5°, 39.2°, and 53.2° corresponding to (002), (004), (006), and (008) orientation of a hexagonal 2H-MoTe2structure. The characteristic Raman peaks of MoTe2, observed at ∼119 cm-1and ∼172 cm-1, correspond to the in-plane E1gand out-of-plane A1gmodes of MoTe2, whereas the prominent peaks of the in-plane E12gmode at ∼234 cm-1and the out-of-plane B12gmode at ∼289 cm-1are also observed. Root mean square (RMS) roughness is found to increase with increasing growth temperature. The bandgap of MoTe2is calculated using a Tauc plot and is found to be 0.90 eV. Electrical characterizations are carried out using current-voltage and current-time measurement, where the maximum responsivity and detectivity are found to be 127.37 mA W-1and 85.21 × 107Jones for a growth temperature of 600 °C and an IR wavelength illumination of 1060 nm.

Suppression of surface optical phonon scattering by AlN interfacial layers for mobility enhancement in MoS2 FETs

Molybdenum disulfide (MoS2) has been attracting attention for its theoretically outstanding electrical characteristics such as an appropriate bandgap, high mobility, and atomically thin nature. However, when MoS2 is used to fabricate field-effect transistors (FETs), it is difficult to achieve intrinsically good performance due to severe scattering caused by charged impurities (CIs), surface roughness, and surface optical phonons (SOPs). Since SOP scattering is widely acknowledged as the dominant mechanism degrading mobility at room temperature, in this study, we aim to suppress the SOP scattering originating from high-κ oxide dielectrics (such as Al2O3 with a low SOP energy of 48.2 meV), by inserting aluminum nitride (AlN) interfacial layers with a high SOP energy of 81.4 meV. MoS2 FETs with an AlN sandwich structure exhibit higher on-current levels and field-effect mobility by approximately 2.5 and 2.3 times, respectively, compared with Al2O3 sandwiched MoS2 FETs. Furthermore, the suppression of SOP scattering by the AlN interfacial layers can be confirmed by the power-law relationship between temperature and mobility, μ∝T-γ. As the number of interfaces between MoS2 and AlN increases from 0 to 2, the γ value decreases from 1.3 to 0.12.

Chemical passivation of 2D transition metal dichalcogenides: strategies, mechanisms, and prospects for optoelectronic applications

The interest in obtaining high-quality monolayer transition metal dichalcogenides (TMDs) for optoelectronic device applications has been growing dramatically. However, the prevalence of defects and unwanted doping in these materials remain challenges, as they both limit optical properties and device performance. Surface chemical treatments of monolayer TMDs have been effective in improving their photoluminescence yield and charge transport properties. In this scenario, a systematic understanding of the underlying mechanism of chemical treatments will lead to a rational design of passivation strategies in future research, ultimately taking a step toward practical optoelectronic applications. We will therefore describe in this mini-review the strategies, progress, mechanisms, and prospects of chemical treatments to passivate and improve the optoelectronic properties of TMDs.

Insulating 6,6-Phenyl-C61-butyric Acid Methyl Ester on Transition-Metal Dichalcogenides: Impact of the Hybrid Materials on the Optical and Electrical Properties

In this study we develop a strategy to insulate 6,6 -Phenyl C61 butyric acid methyl ester (PCBM) on the basal plane of transition metal dichalcogenides (TMDs). Concretely single layers of MoS2, MoSe2, MoTe2, WS2, WSe2 and WTe2 and ultrathin MoO2 and WO2 were grown via chemical vapor deposition (CVD). Then, the thiol group of a PCBM modified with cysteine reacts with the chalcogen vacancies on the basal plane of TMDs, yielding PCBM-MoS2, PCBM-MoSe2, PCBM-WS2, PCBM-WSe2, PCBM-WTe2, PCBM-MoO2 and PCBM-WO2. Afterwards, all the hybrid materials were characterized using several techniques, including XPS, Raman spectroscopy, TEM, AFM, and cyclic voltammetry. Furthermore, PCBM causes a unique optical and electrical impact in every TMDs. For MoS2 devices, the conductivity and photoluminescence (PL) emission achieve a remarkable enhancement of 1700 % and 200 % in PCBM-MoS2 hybrids. Similarly, PCBM-MoTe2 hybrids exhibit a 2-fold enhancement in PL emission at 1.1 eV. On the other hand, PCBM-MoSe2, PCBM-WSe2 and PCBM-WS2 hybrids exhibited a new interlayer exciton at 1.29-1.44, 1.7 and 1.37-154 eV along with an enhancement of the photo-response by 2400, 3200 and 600 %, respectively. Additionally, PCBM-WTe2 and PCBM-WO2 showed a modest photo-response, in sharp contrast with pristine WTe2 or WO2 which archive pure metallic character.

Role of S-Vacancy Concentration in Air Oxidation of WS2 Single Crystals

Semiconducting transition metal dichalcogenides (TMDs) are a class of two-dimensional materials with potential applications in optoelectronics, spintronics, valleytronics, and quantum information processing. Understanding their stability under ambient conditions is critical for determining their in-air processability during device fabrication and for predicting their long-term device performance stability. While the effects of environmental conditions (i.e., oxygen, moisture, and light) on TMD degradation are well-acknowledged, the role of defects in driving their oxidation remains unclear. We conducted a systematic X-ray photoelectron spectroscopy study on WS2 single crystals with different surface S-vacancy concentrations formed via controlled argon sputtering. Oxidation primarily occurred at defect concentrations ≥ 10%, resulting in stoichiometric WO3 formation, while a stable surface was observed at lower concentrations. Theoretical calculations informed us that single S-vacancies do not spontaneously oxidize, while defect pairing at high vacancy concentrations facilitates O2 dissociation and subsequent oxide formation. Our XPS results also point to vacancy-related structural and electrostatic disorder as the main origin for the p-type characteristics that persists even after oxidation. Despite the complex interplay between defects and TMD oxidation processes, our work unveils scientifically informed guidance for working effectively with TMDs.

Pseudouridine-modified RNA probe for label-free electrochemical detection of nucleic acids on 2D MoS2 nanosheets

RNA modification, particularly pseudouridine (Ψ), has played an important role in the development of the mRNA-based COVID-19 vaccine. This is because Ψ enhances RNA stability against nuclease activity and decreases the anti-RNA immune response. Ψ also provides structural flexibility to RNA by enhancing base stacking compared with canonical nucleobases. In this report, we demonstrate the first application of pseudouridine-modified RNA as a probe (Ψ-RNA) for label-free nucleic acid biosensing. It is known that MoS2 has a differential affinity for nucleic acids, which may be translated into a unique electronic signal. Herein, the Ψ-RNA probe interacts with the pristine MoS2 surface and causes a change in interfacial electrochemical charge transfer in the MoS2 nanosheets. Compared with an unmodified RNA probe, Ψ-RNA exhibited faster adsorption and higher affinity for MoS2. Moreover, Ψ-RNA could bind to complementary RNA and DNA targets with almost equal affinity when engaged with the MoS2 surface. Ψ-RNA maintained robust interactions with the MoS2 surface following the hybridization event, perhaps through its extra amino group. The detection sensitivity of the Ψ-RNA/MoS2 platform was as low as 500 attomoles, while the results also indicate that the probe can distinguish between complementary targets, single mismatches, and non-complementary nucleic acid sequences with statistical significance. This proof-of-concept study shows that the Ψ-RNA probe may solve numerous problems of adsorption-based biosensing platforms due to its stability and structural flexibility.

Rational Design of Stimuli-Responsive Inorganic 2D Materials via Molecular Engineering: Toward Molecule-Programmable Nanoelectronics

The ability of electronic devices to act as switches makes digital information processing possible. Succeeding graphene, emerging inorganic 2D materials (i2DMs) have been identified as alternative 2D materials to harbor a variety of active molecular components to move the current silicon-based semiconductor technology forward to a post-Moore era focused on molecule-based information processing components. In this regard, i2DMs benefits are not only for their prominent physiochemical properties (e.g., the existence of bandgap), but also for their high surface-to-volume ratio rich in reactive sites. Nonetheless, since this field is still in an early stage, having knowledge of both i) the different strategies for molecularly functionalizing the current library of i2DMs, and ii) the different types of active molecular components is a sine qua non condition for a rational design of stimuli-responsive i2DMs capable of performing logical operations at the molecular level. Consequently, this Review provides a comprehensive tutorial for covalently anchoring ad hoc molecular components-as active units triggered by different external inputs-onto pivotal i2DMs to assess their role in the expanding field of molecule-programmable nanoelectronics for electrically monitoring bistable molecular switches. Limitations, challenges, and future perspectives of this emerging field which crosses materials chemistry with computation are critically discussed.

Investigation of Interface Interactions Between Monolayer MoS2 and Metals: Implications on Strain and Surface Roughness

Achieving a low contact resistance has been an important issue in the design of two-dimensional (2D) semiconductor-metal interfaces. The metal contact resistance is dominated by interfacial interactions. Here, we systematically investigate 2D semiconductor-metal interfaces formed by transferring monolayer MoS2 onto prefabricated metal surfaces, such as Au and Pd, using X-ray photoelectron spectroscopy (XPS), atomic force microscopy, and Raman spectroscopy. In contrast to the MoS2/HOPG interface, the interfaces of MoS2/Au and MoS2/Pd feature the formation of weak covalent bonds. The XPS spectra reveal distinct peak positions for S-Au and S-Pd, indicating a higher doping concentration at the S-Au interface. This difference is a key factor in understanding the electronic interactions at the metal-MoS2 interfaces. Additionally, we observe that the metal surface roughness is a critical determinant of the adhesion behavior of transferred monolayer MoS2, resulting in different strains and doping concentrations. The strain on transferred MoS2 increases with an increase in substrate roughness. However, the strain is released when the roughness of metal surface surpasses a certain threshold. The dependence of the contact material and the influence of the substrate roughness on the contact interface provide critical information for improving 2D semiconductor-metal contacts and device performance.

Healing Donor Defect States in CVD-Grown MoS2 Field-Effect Transistors Using Oxygen Plasma with a Channel-Protecting Barrier

Molybdenum disulfide (MoS2 ), a metal dichalcogenide, is a promising channel material for highly integrated scalable transistors. However, intrinsic donor defect states, such as sulfur vacancies (Vs ), can degrade the channel properties and lead to undesired n-doping. A method for healing the donor defect states in monolayer MoS2 is proposed using oxygen plasma, with an aluminum oxide (Al2 O3 ) barrier layer that protects the MoS2 channel from damage by plasma treatment. Successful healing of donor defect states in MoS2 by oxygen atoms, even in the presence of an Al2 O3 barrier layer, is confirmed by X-ray photoelectron spectroscopy, photoluminescence, and Raman spectroscopy. Despite the decrease in 2D sheet carrier concentration (Δn2D = -3.82×1012 cm-2 ), the proposed approach increases the on-current and mobility by 18% and 44% under optimal conditions, respectively. Metal-insulator transition occurs at electron concentrations of 5.7×1012 cm-2 and reflects improved channel quality. Finally, the activation energy (Ea ) reduces at all the gate voltages (VG ) owing to a decrease in Vs , which act as a localized state after the oxygen plasma treatment. This study demonstrates the feasibility of plasma-assisted healing of defects in 2D materials and electrical property enhancement and paves the way for the development of next-generation electronic devices.

Negative Differential Interlayer Resistance in WSe2 Multilayers via Conducting Channel Migration with Vertical Double-Side Contacts

The inherent interlayer resistance in two-dimensional (2D) van der Waals (vdW) multilayers is expected to significantly influence the carrier density profile along the thickness, provoking spatial modification and separation of the conducting channel inside the multilayers, in conjunction with the thickness-dependent carrier mobility. However, the effect of the interlayer resistance on the variation in the carrier density profile and its direction along the thickness under different electrostatic bias conditions has been elusive. Here, we reveal the presence of a negative differential interlayer resistance (NDIR) in WSe2 multilayers by considering various contact electrode configurations: (i) bottom contact, (ii) top contact, and (iii) vertical double-side contact (VDC). The contact-structure-dependent shape modification of the transconductance clearly manifests the redistribution of carrier density and indicates the direction of the conducting channel migration along the thickness. Furthermore, the distinct characteristic of the electrically tunable NDIR in 2D WSe2 multilayers is revealed by the observed discrepancy between the top- and bottom-channel resistances determined by four-probe measurements with VDC. Our results provide an optimized device layout and further insights into the distinct carrier transport mechanism in 2D vdW multilayers.

van der Waals 2D transition metal dichalcogenide/organic hybridized heterostructures: recent breakthroughs and emerging prospects of the device

The near-atomic thickness and organic molecular systems, including organic semiconductors and polymer-enabled hybrid heterostructures, of two-dimensional transition metal dichalcogenides (2D-TMDs) can modulate their optoelectronic and transport properties outstandingly. In this review, the current understanding and mechanism of the most recent and significant breakthrough of novel interlayer exciton emission and its modulation by harnessing the band energy alignment between TMDs and organic semiconductors in a TMD/organic (TMDO) hybrid heterostructure are demonstrated. The review encompasses up-to-date device demonstrations, including field-effect transistors, detectors, phototransistors, and photo-switchable superlattices. An exploration of distinct traits in 2D-TMDs and organic semiconductors delves into the applications of TMDO hybrid heterostructures. This review provides insights into the synthesis of 2D-TMDs and organic layers, covering fabrication techniques and challenges. Band bending and charge transfer via band energy alignment are explored from both structural and molecular orbital perspectives. The progress in emission modulation, including charge transfer, energy transfer, doping, defect healing, and phase engineering, is presented. The recent advancements in 2D-TMDO-based optoelectronic synaptic devices, including various 2D-TMDs and organic materials for neuromorphic applications are discussed. The section assesses their compatibility for synaptic devices, revisits the operating principles, and highlights the recent device demonstrations. Existing challenges and potential solutions are discussed. Finally, the review concludes by outlining the current challenges that span from synthesis intricacies to device applications, and by offering an outlook on the evolving field of emerging TMDO heterostructures.

Hydrogen-induced Sulfur Vacancies on the MoS2 Basal Plane Studied by Ambient Pressure XPS and DFT Calculations

Sulfur vacancy on an MoS2 basal plane plays a crucial role in device performance and catalytic activity; thus, an understanding of the electronic states of sulfur vacancies is still an important issue. We investigate the electronic states on an MoS2 basal plane by ambient-pressure X-ray photoelectron spectroscopy (AP-XPS) and density functional theory calculations while heating the system in hydrogen. The AP-XPS results show a decrease in the intensity ratio of S 2p to Mo 3d, indicating that sulfur vacancies are formed. Furthermore, low-energy components are observed in Mo 3d and S 2p spectra. To understand the changes in the electronic states induced by sulfur vacancy formation at the atomic scale, we calculate the core-level binding energies for the model vacancy surfaces. The calculated shifts for Mo 3d and S 2p with the formation of sulfur vacancy are consistent with the experimentally observed binding energy shifts. Mulliken charge analysis indicates that this is caused by an increase in the electronic density associated with the Mo and S atoms around the sulfur vacancy as compared to the pristine surface. The present investigation provides a guideline for sulfur vacancy engineering.

Increased Mobility and Reduced Hysteresis of MoS2 Field-Effect Transistors via Direct Surface Precipitation of CsPbBr3-Nanoclusters for Charge Transfer Doping

Transition-metal dichalcogenides (TMDs) and metal halide perovskites (MHPs) have been investigated for various applications, owing to their unique physical properties and excellent optoelectronic functionalities. TMD monolayers synthesized via chemical vapor deposition (CVD), which are advantageous for large-area synthesis, exhibit low mobility and prominent hysteresis in the electrical signals of field-effect transistors (FETs) because of their native defects. In this study, we demonstrate an increase in electrical mobility by ∼170 times and reduced hysteresis in the current-bias curves of MoS2 FETs hybridized with CsPbBr3 for charge transfer doping, which is implemented via solution-based CsPbBr3-nanocluster precipitation on CVD-grown MoS2 monolayer FETs. Electrons injected from CsPbBr3 into MoS2 induce heavy n-doping and heal point defects in the MoS2 channel layer, thus significantly increasing mobility and reducing hysteresis in the hybrid FETs. Our results provide a foundation for improving the reliability and performance of TMD-based FETs by hybridizing them with solution-based perovskites.

Isomer Discrimination via Defect Engineering in Monolayer MoS2

The all-surface nature of two-dimensional (2D) materials renders them highly sensitive to environmental changes, enabling the on-demand tailoring of their physical properties. Transition metal dichalcogenides, such as 2H molybdenum disulfide (MoS2), can be used as a sensory material capable of discriminating molecules possessing a similar structure with a high sensitivity. Among them, the identification of isomers represents an unexplored and challenging case. Here, we demonstrate that chemical functionalization of defect-engineered monolayer MoS2 enables isomer discrimination via a field-effect transistor readout. A multiscale characterization comprising X-ray photoelectron spectroscopy, Raman spectroscopy, photoluminescence spectroscopy, and electrical measurement corroborated by theoretical calculations revealed that monolayer MoS2 exhibits exceptional sensitivity to the differences in the dipolar nature of molecules arising from their chemical structure such as the one in difluorobenzenethiol isomers, allowing their precise recognition. Our findings underscore the potential of 2D materials for molecular discrimination purposes, in particular for the identification of complex isomers.

Physical adsorption and oxidation of ultra-thin MoS2crystals: insights into surface engineering for 2D electronics and beyond

The oxidation mechanism of atomically thin molybdenum disulfide (MoS2) plays a critical role in its nanoelectronics, optoelectronics, and catalytic applications, where devices often operate in an elevated thermal environment. In this study, we systematically investigate the oxidation of mono- and few-layer MoS2flakes in the air at temperatures ranging from 23 °C to 525 °C and relative humidities of 10%-60% by using atomic force microscopy (AFM), Raman spectroscopy and x-ray photoelectron spectroscopy. Our study reveals the formation of a uniform nanometer-thick physical adsorption layer on the surface of MoS2, which is attributed to the adsorption of ambient moisture. This physical adsorption layer acts as a thermal shield of the underlying MoS2lattice to enhance its thermal stability and can be effectively removed by an AFM tip scanning in contact mode or annealing at 400 °C. Our study shows that high-temperature thermal annealing and AFM tip-based cleaning result in chemical adsorption on sulfur vacancies in MoS2, leading to p-type doping. Our study highlights the importance of humidity control in ensuring reliable and optimal performance for MoS2-based electronic and electrochemical devices and provides crucial insights into the surface engineering of MoS2, which are relevant to the study of other two-dimensional transition metal dichalcogenide materials and their applications.

Patching sulfur vacancies: A versatile approach for achieving ultrasensitive gas sensors based on transition metal dichalcogenides

Transition metal dichalcogenides (TMDCs) garner significant attention for their potential to create high-performance gas sensors. Despite their favorable properties such as tunable bandgap, high carrier mobility, and large surface-to-volume ratio, the performance of TMDCs devices is compromised by sulfur vacancies, which reduce carrier mobility. To mitigate this issue, we propose a simple and universal approach for patching sulfur vacancies, wherein thiol groups are inserted to repair sulfur vacancies. The sulfur vacancy patching (SVP) approach is applied to fabricate a MoS₂-based gas sensor using mechanical exfoliation and all-dry transfer methods, and the resulting 4-nitrothiophenol (4NTP) repaired molybdenum disulfide (4NTP-MoS₂) is prepared via a sample solution process. Our results show that 4NTP-MoS₂ exhibits higher response (increased by 200 %) to ppb-level NO₂ with shorter response/recovery times (61/82 s) and better selectivity at 25 °C compared to pristine MoS₂. Notably, the limit of detection (LOD) toward NO₂ of 4NTP-MoS₂ is 10 ppb. Kelvin probe force microscopy (KPFM) and density functional theory (DFT) reveal that the improved gas sensing performance is mainly attributed to the 4NTP-induced n-doping effect on MoS₂ and the corresponding increment of surface absorption energy to NO₂. Additionally, our 4NTP-induced SVP approach is universal for enhancing gas sensing properties of other TMDCs, such as MoSe₂, WS₂, and WSe₂.

A graphitic nano-onion/molybdenum disulfide nanosheet composite as a platform for HPV-associated cancer-detecting DNA biosensors

An electrochemical DNA sensor that can detect human papillomavirus (HPV)-16 and HPV-18 for the early diagnosis of cervical cancer was developed by using a graphitic nano-onion/molybdenum disulfide (MoS₂) nanosheet composite. The electrode surface for probing DNA chemisorption was prepared via chemical conjugation between acyl bonds on the surfaces of functionalized nanoonions and the amine groups on functionalized MoS₂ nanosheets. The cyclic voltammetry profile of an 1:1 nanoonion/MoS₂ nanosheet composite electrode had an improved rectangular shape compared to that of an MoS₂ nanosheet elecrode, thereby indicating the amorphous nature of the nano-onions with sp₂ distancing curved carbon layers that provide enhanced electronic conductivity, compared to MoS₂ nanosheet only. The nanoonion/MoS₂ sensor for the DNA detection of HPV-16 and HPV-18, respectively, was measured at high sensitivity through differential pulse voltammetry (DPV) in the presence of methylene blue (MB) as a redox indicator. The DPV current peak was lowered after probe DNA chemisorption and target DNA hybridization because the hybridized DNA induced less effective MB electrostatic intercalation due to it being double-stranded, resulting in a lower oxidation peak. The nanoonion/MoS₂ nanosheet composite electrodes attained higher current peaks than the MoS₂ nanosheet electrode, thereby indicating a greater change in the differential peak probably because the nanoonions enhanced conductive electron transfer. Notably, both of the target DNAs produced from HPV-18 and HPV-16 Siha and Hela cancer cell lines were effectively detected with high specificity. The conductivity of MoS₂ improved by complexation with nano-onions provides a suitable platform for electrochemical biosensors for the early diagnosis of many ailments in humans.

Surface Modification of Transition Metal Dichalcogenide Nanosheets for Intrinsically Self-Healing Hydrogels with Enhanced Mechanical Properties

Nanocomposites with enhanced mechanical properties and efficient self-healing characteristics can change how the artificially engineered materials' life cycle is perceived. Improved adhesion of nanomaterials with the host matrix can drastically improve the structural properties and confer the material with repeatable bonding/debonding capabilities. In this work, exfoliated 2H-WS₂ nanosheets are modified using an organic thiol to impart hydrogen bonding sites on the otherwise inert nanosheets by surface functionalization. These modified nanosheets are incorporated within the PVA hydrogel matrix and analyzed for their contribution to the composite's intrinsic self-healing and mechanical strength. The resulting hydrogel forms a highly flexible macrostructure with an impressive enhancement in mechanical properties and a very high autonomous healing efficiency of 89.92%. Interesting changes in the surface properties after functionalization show that such modification is highly suitable for water-based polymeric systems. Probing into the healing mechanism using advanced spectroscopic techniques reveals the formation of a stable cyclic structure on the surface of nanosheets, mainly responsible for the improved healing response. This work opens an avenue toward the development of self-healing nanocomposites where chemically inert nanoparticles participate in the healing network rather than just mechanically reinforcing the matrix by slender adhesion.

Enhanced Interlayer Charge Injection Efficiency in 2D Multilayer ReS2 via Vertical Double-Side Contacts

Two-dimensional (2D) van der Waals (vdW) layered materials have provided novel opportunities to explore interesting physical properties such as thickness-dependent bandgap, moiré excitons, superconductivity, and superfluidity. However, the presence of interlayer resistance along the thickness and Schottky barrier in metal-to-2D vdW semiconducting materials causes a limited interlayer charge injection efficiency, perturbing various intrinsic properties of 2D vdW multilayers. Herein, we report a simple but powerful contact electrode design to enhance interlayer carrier injection efficiency along the thickness by constructing vertical double-side contact (VDC) electrodes. A 2-fold extended contact area of VDC not only strongly limits an interlayer resistance contribution to the field-effect mobility and current density at the metal-to-2D semiconductor interface but also significantly suppresses both current transfer length (≤1 μm) and specific contact resistivity (≤1 mΩ·cm²), manifesting clear benefits of VDC in comparison with those in conventional top-contact and bottom-contact configurations. Our layout for contact electrode configuration may suggest an advanced electronic device platform for high-performing 2D optoelectronic devices.

Efficient Hydrogen Evolution via 1T-MoS2 /Chlorophyll-a Heterostructure: Way Toward Metal Free Green Catalyst

Electrocatalytic hydrogen evolution reaction (HER) is regarded as a sustainable and green way for H₂ generation, which faces a great challenge in designing highly active, stable electrocatalysts to replace the state-of-art noble metal-platinum catalysts. 1T MoS₂ is highly promising in this regard, but the synthesis and stability of this is a particularly pressing task. Here, a phase engineering strategy has been proposed to achieve a stable, high-percentage (88%) 1T MoS₂ /chlorophyll-a hetero-nanostructure, through a photo-induced donation of anti-bonding electrons from chlorophyll-a (CHL-a) highest occupied molecular orbital to 2H MoS₂ lowest unoccupied molecular orbital. The resultant catalyst has abundant binding sites provided by the coordination of magnesium atom in the CHL-a macro-cycle, featuring higher binding strength and low Gibbs-free energy. This metal-free heterostructure exhibits excellent stability via band renormalization of Mo 4d orbital which creates the pseudogap-like structure by lifting the degeneracy of projected density of state with 4S in 1T MoS₂ . It shows extremely low overpotential, toward the acidic HER (68 mV at the current density of 10 mA cm^-2 ), very close to the Pt/C catalyst (53 mV). The high electrochemical-surface-area and electrochemical turnover frequency support enhanced active sites along with near zero Gibbs free energy. Such a surface-reconstruction strategy provides a new avenue toward the production of efficient non-noble-metal-catalysts for the HER with the aim of green-hydrogen production.

Realizing Electronic Synapses by Defect Engineering in Polycrystalline Two-Dimensional MoS2 for Neuromorphic Computing

Neuromorphic computing based on two-dimensional transition-metal dichalcogenides (2D TMDs) has attracted significant attention recently due to their extraordinary properties generated by the atomic-thick layered structure. This study presents sulfur-defect-assisted MoS₂ artificial synaptic devices fabricated by a simple sputtering process, followed by a precise sulfur (S) vacancy-engineering process. While the as-sputtered MoS₂ film does not show synaptic behavior, the S vacancy-controlled MoS₂ film exhibits excellent synapse with remarkable nonvolatile memory characteristics such as a high switching ratio (∼10³), a large memory window, and long retention time (∼10⁴ s) in addition to synaptic functions such as paired-pulse facilitation (PPF) and long-term potentiation (LTP)/depression (LTD). The synaptic device working mechanism of Schottky barrier height modulation by redistributing S vacancies was systemically analyzed by electrical, physical, and microscopy characterizations. The presented MoS₂ synaptic device, based on the precise defect engineering of sputtered MoS₂, is a facile, low-cost, complementary metal-oxide semiconductor (CMOS)-compatible, and scalable method and provides a procedural guideline for the design of practical 2D TMD-based neuromorphic computing.

Electrical monitoring of organic crystal phase transition using MoS2 field effect transistor

Hybrid van der Waals heterostructures made of 2D materials and organic molecules exploit the high sensitivity of 2D materials to all interfacial modifications and the inherent versatility of the organic compounds. In this study, we are interested in the quinoidal zwitterion/MoS₂ hybrid system in which organic crystals are grown by epitaxy on the MoS₂ surface and reorganize in another polymorph after thermal annealing. By means of field-effect transistor measurements recorded in situ all along the process, atomic force microscopy and density functional theory calculations we demonstrate that the charge transfer between quinoidal zwitterions and MoS₂ strongly depends on the conformation of the molecular film. Remarkably, both the field effect mobility and the current modulation depth of the transistors remain unchanged which opens up promising prospects for efficient devices based on this hybrid system. We also show that MoS₂ transistors enable fast and accurate detection of structural modifications that occur during phases transitions of the organic layer. This work highlights that MoS₂ transistors are remarkable tools for on-chip detection of molecular events occurring at the nanoscale, which paves the way for the investigation of other dynamical systems.

The Covalent Functionalization of Surface-Supported Graphene: An Update

In the last decade, the use of graphene supported on solid surfaces has broadened its scope and applications, and graphene has acquire a promising role as a major component of high-performance electronic devices. In this context, the chemical modification of graphene has become essential. In particular, covalent modification offers key benefits, including controllability, stability, and the facility to be integrated into manufacturing operations. In this Review, we critically comment on the latest advances in the covalent modification of supported graphene on substrates. We analyze the different chemical modifications with special attention to radical reactions. In this context, we review the latest achievements in reactivity control, tailoring electronic properties, and introducing active functionalities. Finally, we extended our analysis to other emerging 2D materials supported on surfaces, such as transition metal dichalcogenides, transition metal oxides, and elemental analogs of graphene.

Light-driven proton transmembrane transport enabled by bio-semiconductor 2D membrane: A general peptide-induced WS2 band shifting strategy

Light-driven proton directional transport is important in living beings as it could subtly realize the light energy conversion for living uses. In the past years, 2D materials-based nanochannels have shown great potential in active ion transport due to controllable properties, including surface charge distribution, wettability, functionalization, electric structure, and external stimuli responsibility, etc. However, to fuse the inorganic materials into bio-membranes still faces several challenges. Here, we proposed peptide-modified WS2 nanosheets via cysteine linkers to realize tunable band structure and, hence, enable light-driven proton transmembrane transport. The modification was achieved through the thiol chemistry of the -SH groups in the cysteine linker and the S vacancy on the WS2 nanosheets. By tuning the amino residues sequences (lysine-rich peptides, denoted as KFC; and aspartate-rich peptides, denoted as DFC), the ζ-potential, surface charge, and band energy of WS2 nanosheets could be rationally regulated. Janus membranes formed by assembling the peptide-modified WS2 nanosheets could realize the proton transmembrane transport under visible light irradiation, driven by a built-in potential due to a type II band alignment between the KFC-WS2 and DFC-WS2. As a result, the proton would be driven across the formed nanochannels. These results demonstrate a general strategy to build bio-semiconductor materials and provide a new way for embedding inorganic materials into biological systems toward the development of bioelectronic devices.

Defect-engineered room temperature negative differential resistance in monolayer MoS2 transistors

The negative differential resistance (NDR) effect has been widely investigated for the development of various electronic devices. Apart from traditional semiconductor-based devices, two-dimensional (2D) transition metal dichalcogenide (TMD)-based field-effect transistors (FETs) have also recently exhibited NDR behavior in several of their heterostructures. However, to observe NDR in the form of monolayer MoS₂, theoretical prediction has revealed that the material should be more profoundly affected by sulfur (S) vacancy defects. In this work, monolayer MoS₂ FETs with a specific amount of S-vacancy defects are fabricated using three approaches, namely chemical treatment (KOH solution), physical treatment (electron beam bombardment), and as-grown MoS₂. Based on systematic studies on the correlation of the S-vacancies with both the device's electron transport characteristics and spectroscopic analysis, the NDR has been clearly observed in the defect-engineered monolayer MoS₂ FETs with an S-vacancy (V_S) amount of ∼5 ± 0.5%. Consequently, stable NDR behavior can be observed at room temperature, and its peak-to-valley ratio can also be effectively modulated via the gate electric field and light intensity. Through these results, it is envisioned that more electronic applications based on defect-engineered layered TMDs will emerge in the near future.

Vacancy Defects in 2D Transition Metal Dichalcogenide Electrocatalysts: From Aggregated to Atomic Configuration

Vacancy defect engineering has been well leveraged to flexibly shape comprehensive physicochemical properties of diverse catalysts. In particular, growing research effort has been devoted to engineering chalcogen anionic vacancies (S/Se/Te) of 2D transition metal dichalcogenides (2D TMDs) toward the ultimate performance limit of electrocatalytic hydrogen evolution reaction (HER). In spite of remarkable progress achieved in the past decade, systematic and in-depth insights into the state-of-the-art vacancy engineering for 2D-TMDs-based electrocatalysis are still lacking. Herein, this review delivers a full picture of vacancy engineering evolving from aggregated to atomic configurations covering their development background, controllable manufacturing, thorough characterization, and representative HER application. Of particular interest, the deep-seated correlations between specific vacancy regulation routes and resulting catalytic performance improvement are logically clarified in terms of atomic rearrangement, charge redistribution, energy band variation, intermediate adsorption-desorption optimization, and charge/mass transfer facilitation. Beyond that, a broader vision is cast into the cutting-edge research fields of vacancy-engineering-based single-atom catalysis and dynamic structure-performance correlations across catalyst service lifetime. Together with critical discussion on residual challenges and future prospects, this review sheds new light on the rational design of advanced defect catalysts and navigates their broader application in high-efficiency energy conversion and storage fields.

Controlled p-Type Doping of MoS2 Monolayer by Copper Chloride

Electronic devices based on two-dimensional (2D) MoS₂ show great promise as future building blocks in electronic circuits due to their outstanding electrical, optical, and mechanical properties. Despite the high importance of doping of these 2D materials for designing field-effect transistors (FETs) and logic circuits, a simple and controllable doping methodology still needs to be developed in order to tailor their device properties. Here, we found a simple and effective chemical doping strategy for MoS₂ monolayers using CuCl₂ solution. The CuCl₂ solution was simply spin-coated on MoS₂ with different concentrations under ambient conditions for effectively p-doping the MoS₂ monolayers. This was systematically analyzed using various spectroscopic measurements using Raman, photoluminescence, and X-ray photoelectron and electrical measurements by observing the change in transfer and output characteristics of MoS₂ FETs before and after CuCl₂ doping, showing effective p-type doping behaviors as observed through the shift of threshold voltages (Vth) and reducing the ON and OFF current level. Our results open the possibility of providing effective and simple doping strategies for 2D materials and other nanomaterials without causing any detrimental damage.

Recent progress in 2D hybrid heterostructures from transition metal dichalcogenides and organic layers: properties and applications in energy and optoelectronics fields

Atomically thin transition metal dichalcogenides (TMDs) present extraordinary optoelectronic, electrochemical, and mechanical properties that have not been accessible in bulk semiconducting materials. Recently, a new research field, 2D hybrid heteromaterials, has emerged upon integrating TMDs with molecular systems, including organic molecules, polymers, metal-organic frameworks, and carbonaceous materials, that can tailor the TMD properties and exploit synergetic effects. TMD-based hybrid heterostructures can meet the demands of future optoelectronics, including supporting flexible, transparent, and ultrathin devices, and energy-based applications, offering high energy and power densities with long cycle lives. To realize such applications, it is necessary to understand the interactions between the hybrid components and to develop strategies for exploiting the distinct benefits of each component. Here, we provide an overview of the current understanding of the new phenomena and mechanisms involved in TMD/organic hybrids and potential applications harnessing such valuable materials in an insightful way. We highlight recent discoveries relating to multicomponent hybrid materials. Finally, we conclude this review by discussing challenges related to hybrid heteromaterials and presenting future directions and opportunities in this research field.

Atomic and structural modifications of two-dimensional transition metal dichalcogenides for various advanced applications

Two-dimensional (2D) transition metal dichalcogenides (TMDs) and their heterostructures have attracted significant interest in both academia and industry because of their unusual physical and chemical properties. They offer numerous applications, such as electronic, optoelectronic, and spintronic devices, in addition to energy storage and conversion. Atomic and structural modifications of van der Waals layered materials are required to achieve unique and versatile properties for advanced applications. This review presents a discussion on the atomic-scale and structural modifications of 2D TMDs and their heterostructures via post-treatment. Atomic-scale modifications such as vacancy generation, substitutional doping, functionalization and repair of 2D TMDs and structural modifications including phase transitions and construction of heterostructures are discussed. Such modifications on the physical and chemical properties of 2D TMDs enable the development of various advanced applications including electronic and optoelectronic devices, sensing, catalysis, nanogenerators, and memory and neuromorphic devices. Finally, the challenges and prospects of various post-treatment techniques and related future advanced applications are addressed.

Tabletop Fabrication of High-Performance MoS2 Field-Effect Transistors

A simple way to prepare field-effect transistors (FETs) using MoS₂ on tabletop is presented. Conductive silver paste was applied onto chemical vapor deposition (CVD)-grown MoS₂ as Ohmic-contact electrodes. Heating the device in vacuum further enhances the performance without damage. The final performance is comparable to that of the SiO₂-backgated devices prepared by lithography and metal evaporators. The role of the silver paste and heat treatment in vacuum is investigated by device and spectroscopic analysis.

Local Structure of Sulfur Vacancies on the Basal Plane of Monolayer MoS2

The nature of the S-vacancy is central to controlling the electronic properties of monolayer MoS₂. Understanding the geometric and electronic structures of the S-vacancy on the basal plane of monolayer MoS₂ remains elusive. Here, operando S K-edge X-ray absorption spectroscopy shows the formation of clustered S-vacancies on the basal plane of monolayer MoS₂ under reaction conditions (H₂ atmosphere, 100-600 °C). First-principles calculations predict spectral fingerprints consistent with the experimental results. The Mo K-edge extended X-ray absorption fine structure shows the local structure as coordinatively unsaturated Mo with 4.1 ± 0.4 S atoms as nearest neighbors (above 400 °C in an H₂ atmosphere). Conversely, the 6-fold Mo-Mo coordination in the crystal remains unchanged. Electrochemistry confirms similar active sites for hydrogen evolution. The identity of the S-vacancy defect on the basal plane of monolayer MoS₂ is herein elucidated for applications in optoelectronics and catalysis.

Tailoring the Electrical Characteristics of MoS2 FETs through Controllable Surface Charge Transfer Doping Using Selective Inkjet Printing

Surface charge transfer doping (SCTD) has been regarded as an effective approach to tailor the electrical characteristics of atomically thin transition metal dichalcogenides (TMDs) in a nondestructive manner due to their two-dimensional nature. However, the difficulty of achieving rationally controlled SCTD on TMDs via conventional doping methods, such as solution immersion and dopant vaporization, has impeded the realization of practical optoelectronic and electronic devices. Here, we demonstrate controllable SCTD of molybdenum disulfide (MoS₂) field-effect transistors using inkjet-printed benzyl viologen (BV) as an n-type dopant. By adjusting the BV concentration and the areal coverage of inkjet-printed BV dopants, controllable SCTD results in BV-doped MoS₂ FETs with elaborately tailored electrical performance. Specifically, the suggested solvent system creates well-defined droplets of BV ink having a volume of ∼2 pL, which allows the high spatial selectivity of SCTD onto the MoS₂ channels by depositing the BV dopant on demand. Our inkjet-printed SCTD method provides a feasible solution for achieving controllable doping to modulate the electrical and optical performances of TMD-based devices.

Electron Doping of Semiconducting MoS2 Nanosheets by Silver or Gold Nanoclusters

Semiconducting two-dimensional (2D) materials have potential applications as ultrathin optoelectronic materials. Therefore, being able to precisely modulate the band gap is useful to improving their applicability. Electron doping of the semiconducting materials is one of the successful techniques used to modulate their band gap. Silver nanoclusters (AgNCs) or gold nanoclusters (AuNCs) a few nanometers in size can generate a high density of highly energetic hot electrons with relatively long lifetimes when photoexcited. The optical band gap of 2D MoS₂ nanosheets shows different responses when integrated with different amounts of AgNCs or AuNCs due to the electron doping effect. Introducing a small amount of the nanoclusters to the surface of a MoS₂ nanosheet lowered its optical band gap. Further reduction of the optical band gap of MoS₂ is obtained upon tripling the amount of integrated nanoclusters. Conversely, the optical band gap of MoS₂ was increased when integrated with 5 times the concentration of AuNCs and AgNCs. The optical band gap of the MoS₂ nanosheets was significantly increased when integrated with an even higher concentration of AuNCs or AgNCs. The magnitude of the shift of the optical band gap of MoS₂ induced by AgNCs is higher than that induced by AuNCs because the energy of LUMO of the AgNCs is higher than that of the AuNCs.

A study on structural, optical, and electrical characteristics of perovskite CsPbBr3 QD/2D-TiSe2 nanosheet based nanocomposites for optoelectronic applications

Lead halide perovskite (CsPbBr₃) quantum dots (QDs) and two-dimensional (2D) layered transition metal dichalcogenides have a significant application in solution-processed optoelectronic devices. Here, we report the oleylamine-assisted exfoliation of TiSe₂ nanosheets (NSs) in dichlorobenzene with high concentration and stable dispersion. The functionalized TiSe₂ NSs were used to synthesize the solution-processed perovskite CsPbBr₃ QD/TiSe₂ NS-based nanocomposite. The perovskite QDs and TiSe₂ NSs were characterized by different techniques. The strong photoluminescence (PL) quenching and decreased lifetime decay of the nanocomposite indicates efficient charge transfer from photo-excited CsPbBr₃ to TiSe₂ NSs. The calculated charge-transfer rate constant (K_ET) from photo-excited CsPbBr₃ to TiSe₂ NSs increased from 1.50 × 10⁸ to 2.79 × 10⁸ s^-1 in different concentrations of TiSe₂ NSs (5 to 20 μg mL^-1), respectively. Furthermore, the photo-currents of CsPbBr₃ QD/TiSe₂ NS nanocomposite devices were dramatically enhanced ∼2 times compared to pristine CsPbBr₃ QD based devices, which supports the charge transfer and charge separation in nanocomposite devices.

Asymmetric Chemical Functionalization of Top-Contact Electrodes: Tuning the Charge Injection for High-Performance MoS2 Field-Effect Transistors and Schottky Diodes

The fabrication of high-performance (opto-)electronic devices based on 2D channel materials requires the optimization of the charge injection at electrode-semiconductor interfaces. While chemical functionalization with chemisorbed self-assembled monolayers has been extensively exploited to adjust the work function of metallic electrodes in bottom-contact devices, such a strategy has not been demonstrated for the top-contact configuration, despite the latter being known to offer enhanced charge-injection characteristics. Here, a novel contact engineering method is developed to functionalize gold electrodes in top-contact field-effect transistors (FETs) via the transfer of chemically pre-modified electrodes. The source and drain Au electrodes of the molybdenum disulfide (MoS₂ ) FETs are functionalized with thiolated molecules possessing different dipole moments. While the modification of the electrodes with electron-donating molecules yields a marked improvement of device performance, the asymmetric functionalization of the source and drain electrodes with different molecules with opposed dipole moment enables the fabrication of a high-performance Schottky diode with a rectification ratio of ≈10³ . This unprecedented strategy to tune the charge injection in top-contact MoS₂ FETs is of general applicability for the fabrication of high-performance (opto-)electronic devices, in which asymmetric charge injection is required, enabling tailoring of the device characteristics on demand.

Atomic Vacancies in Transition Metal Dichalcogenides: Properties, Fabrication, and Limits

Structural defects, such as heteroatoms or atomic vacancies, are always present in materials and significantly affect their physical properties, in both positive or unwanted ways. Interestingly, defects generate an impressive range of functionalities in many materials, such as catalysis, electrical and thermal conductivity tuning, thermoelectricity, enhanced ion storage, magnetism, and others. These properties enable the use of defective materials in a great variety of technological applications. Here we review the principal properties generated by atomic vacancies in 2D compounds and thin films of transition metal dichalcogenides and the most consolidated methods for their formation and engineering. Eventually, we critically analysed the most important advantages, the limits and the current open challenges.

Excitons and Trions in MoS2 Quantum Dots: The Influence of the Dispersing Medium

Single-layer MoS₂ has been reported to exhibit strong excitonic and trionic signatures in its photoluminescence (PL) spectra. Here, we report that the emission spectra of MoS₂ QDs strongly depend on the dielectric constant of the solvent and the relative difference in the electronegativity between the solvent and QDs. Due to the difference in electronegativity, electrons are either added to the QD or withdrawn from it. Consequently, depending upon the dielectric permittivity and the electronegativity of the surrounding medium, the signature peaks of excitons and trions exhibit a significant change in the PL spectra of MoS₂ QDs. Our findings are helpful to understand the effect of the surrounding environment on the optical properties of QDs and the importance of the selection of solvent since MoS₂ QDs are potential candidates for valleytronics applications.

Multilayer WSe2 /MoS2 Heterojunction Phototransistors through Periodically Arrayed Nanopore Structures for Bandgap Engineering

While 2D transition metal dichalcogenides (TMDs) are promising building blocks for various optoelectronic applications, limitations remain for multilayered TMD-based photodetectors: an indirect bandgap and a short carrier lifetime by strongly bound excitons. Accordingly, multilayered TMDs with a direct bandgap and an enhanced carrier lifetime are required for the development of various optoelectronic devices. Here, periodically arrayed nanopore structures (PANS) are proposed for improving the efficiency of multilayered p-WSe₂ /n-MoS₂ phototransistors. Density functional theory calculations as well as photoluminescence and time-resolved photoluminescence measurements are performed to characterize the photodetector figures of merit of multilayered p-WSe₂ /n-MoS₂ heterostructures with PANS. The characteristics of the heterojunction devices with PANS reveal an enhanced responsivity and detectivity measured under 405 nm laser excitation, which at 1.7 × 10⁴ A W^-1 and 1.7 × 10¹³ Jones are almost two orders of magnitude higher than those of pristine devices, 3.6 × 10² A W^-1 and 3.6 × 10¹¹ Jones, respectively. Such enhanced optical properties of WSe₂ /MoS₂ heterojunctions with PANS represent a significant step toward next-generation optoelectronic applications.

An Asymmetry Field-Effect Phototransistor for Solving Large Exciton Binding Energy of 2D TMDCs

The probing of fundamental photophysics is a key prerequisite for the construction of diverse optoelectronic devices and circuits. To date, though, photocarrier dynamics in 2D materials remains unclear, plagued primarily by two issues: a large exciton binding energy, and the lack of a suitable system that enables the manipulation of excitons. Here, a WSe₂ -based phototransistor with an asymmetric split-gate configuration is demonstrated, which is named the "asymmetry field-effect phototransistor" (AFEPT). This structure allows for the effective modulation of the electric-field profile across the channel, thereby providing a standard device platform for exploring the photocarrier dynamics of the intrinsic WSe₂ layer. By controlling the electric field, this work the spatial evolution of the photocurrent is observed, notably with a strong signal over the entire WSe₂ channel. Using photocurrent and optical spectroscopy measurements, the physical origin of the novel photocurrent behavior is clarified and a room-temperature exciton binding energy of 210 meV is determined with the device. In the phototransistor geometry, lateral p-n junctions serve as a simultaneous pathway for both photogenerated electrons and holes, reducing their recombination rate and thus enhancing photodetection. The study establishes a new device platform for both fundamental studies and technological applications.

Recent trends in covalent functionalization of 2D materials

Covalent functionalization of the surface is more crucial in 2D materials than in conventional bulk materials because of their atomic thinness, large surface-to-volume ratio, and uniform surface chemical potential. Because...

Effect of Al2O3 Passive Layer on Stability and Doping of MoS2 Field-Effect Transistor (FET) Biosensors

Molybdenum disulfide (MoS2) features a band gap of 1.3 eV (indirect) to 1.9 eV (direct). This tunable band gap renders MoS2 a suitable conducting channel for field-effect transistors (FETs). In addition, the highly sensitive surface potential in MoS2 layers allows the feasibility of FET applications in biosensors, where direct immobilization and detection of biological molecules are conducted in wet conditions. In this work, we report, for the first time, the degradation of chemical vapor deposition (CVD) grown MoS2 FET-based sensors in the presence of phosphate buffer and water, which caused false positive response in detection. We conclude the degradation was originated by physical delamination of MoS2 thin films from the SiO2 substrate. The problem was alleviated by coating the sensors with a 30 nm thick aluminum oxide (Al2O3) layer using atomic layer deposition technique (ALD). This passive oxide thin film not only acted as a protecting layer against the device degradation but also induced a strong n-doping onto MoS2, which permitted a facile method of detection in MoS2 FET-based sensors using a low-power mode chemiresistive I-V measurement at zero gate voltage (Vgate = 0 V). Additionally, the oxide layer provided available sites for facile functionalization with bioreceptors. As immunoreaction plays a key role in clinical diagnosis and environmental analysis, our work presented a promising application using such enhanced Al2O3-coated MoS2 chemiresistive biosensors for detection of HIgG with high sensitivity and selectivity. The biosensor was successfully applied to detect HIgG in artificial urine, a complex matrix containing organics and salts.

Colloidal n-Doped CdSe and CdSe/ZnS Nanoplatelets

Colloidal semiconductor nanoplatelets (NPLs) are chemical versions of well-studied quantum wells (QWs). For QWs, gating and carrier doping are standard tools to manipulate their optical, electric, or magnetic properties. It would be highly desirable to use pure chemical methods to dope extra charge carriers into free-standing colloidal NPLs to achieve a similar level of manipulation. Here we report colloidal n-doped CdSe and CdSe/ZnS NPLs achieved through a photochemical doping method. The extra electrons doped into the conduction band edges are evidenced by exciton absorption bleaches recoverable through dedoping and the appearance of new intersub-band transitions in the near-infrared. A high surface ligand coverage is the key to successful doping; otherwise, the doped electrons can be depleted likely by unpassivated surface cations. Large trion binding energies of 20-30 meV are found for the n-doped CdSe NPLs, which, in contrast, are reduced by 1 order of magnitude in CdSe/ZnS core/shell NPLs due to dielectric screening. Furthermore, we identify a long-lived negative trion with a lifetime of 1.5-1.6 ns that is likely dominated by radiative recombination.

Molecular Approach to Engineer Two-Dimensional Devices for CMOS and beyond-CMOS Applications

Two-dimensional materials (2DMs) have attracted tremendous research interest over the last two decades. Their unique optical, electronic, thermal, and mechanical properties make 2DMs key building blocks for the fabrication of novel complementary metal-oxide-semiconductor (CMOS) and beyond-CMOS devices. Major advances in device functionality and performance have been made by the covalent or noncovalent functionalization of 2DMs with molecules: while the molecular coating of metal electrodes and dielectrics allows for more efficient charge injection and transport through the 2DMs, the combination of dynamic molecular systems, capable to respond to external stimuli, with 2DMs makes it possible to generate hybrid systems possessing new properties by realizing stimuli-responsive functional devices and thereby enabling functional diversification in More-than-Moore technologies. In this review, we first introduce emerging 2DMs, various classes of (macro)molecules, and molecular switches and discuss their relevant properties. We then turn to 2DM/molecule hybrid systems and the various physical and chemical strategies used to synthesize them. Next, we discuss the use of molecules and assemblies thereof to boost the performance of 2D transistors for CMOS applications and to impart diverse functionalities in beyond-CMOS devices. Finally, we present the challenges, opportunities, and long-term perspectives in this technologically promising field.

Boosting the Optoelectronic Properties of Molybdenum Diselenide by Combining Phase Transition Engineering with Organic Cationic Dye Doping

Two-dimensional layered transition metal dichalcogenides (TMDs) have been investigated intensively as next-generation semiconducting materials. However, conventional TMD-based devices exhibit large contact resistance at the interface between the TMD and the metal electrode because of Fermi level pinning and the Schottky barrier, which results in poor charge injection. Here, we present enhanced charge transport characteristics in molybdenum diselenide (MoSe₂) by means of a sequential engineering process called PESOD-2H/1T (i.e., phase transition engineering combined with surface transfer organic cationic dye doping; 2H and 1T represent the trigonal prismatic and octahedral phases, respectively). Substantial improvements are observed in PESOD-processed MoSe₂ phototransistors, specifically, an approximately 40 000-fold increase in effective carrier mobility and a 100 000-fold increase in photoresponsivity, compared with the mobility and photoresponsivity of intact MoSe₂ phototransistors. Moreover, the PESOD-processed MoSe₂ phototransistor on a flexible substrate maintains its optoelectronic properties under tensile stress, with a bending radius of 5 mm.

Single-Atom Engineering to Ignite 2D Transition Metal Dichalcogenide Based Catalysis: Fundamentals, Progress, and Beyond

Single-atom catalysis has been recognized as a pivotal milestone in the development history of heterogeneous catalysis by virtue of its superior catalytic performance, ultrahigh atomic utilization, and well-defined structure. Beyond single-atom protrusions, two more motifs of single-atom substitutions and single-atom vacancies along with synergistic single-atom motif assemblies have been progressively developed to enrich the single-atom family. On the other hand, besides traditional carbon material based substrates, a wide variety of 2D transitional metal dichalcogenides (TMDs) have been emerging as a promising platform for single-atom catalysis owing to their diverse elemental compositions, variable crystal structures, flexible electronic structures, and intrinsic activities toward many catalytic reactions. Such substantial expansion of both single-atom motifs and substrates provides an enriched toolbox to further optimize the geometric and electronic structures for pushing the performance limit. Concomitantly, higher requirements have been put forward for synthetic and characterization techniques with related technical bottlenecks being continuously conquered. Furthermore, this burgeoning single-atom catalyst (SAC) system has triggered serial scientific issues about their changeable single atom-2D substrate interaction, ambiguous synergistic effects of various atomic assemblies, as well as dynamic structure-performance correlations, all of which necessitate further clarification and comprehensive summary. In this context, this Review aims to summarize and critically discuss the single-atom engineering development in the whole field of 2D TMD based catalysis covering their evolution history, synthetic methodologies, characterization techniques, catalytic applications, and dynamic structure-performance correlations. In situ characterization techniques are highlighted regarding their critical roles in real-time detection of SAC reconstruction and reaction pathway evolution, thus shedding light on lifetime dynamic structure-performance correlations which lay a solid theoretical foundation for the whole catalytic field, especially for SACs.

Tuning the Optical Band Gap of Two-Dimensional WS2 Integrated with Gold Nanocubes by Introducing Palladium Nanostructures

The two characteristic absorption peaks of semiconducting two-dimensional tungsten disulfide (WS₂) are red-shifted after integrating with gold nanocube (AuNC) arrays. The amount of the red shift is reduced when the AuNCs are coated with a high concentration of Pd. A negligible shift was observed in the absorption peaks of WS₂ when smaller amounts of Pd are introduced to the surface of AuNCs. Conversely, the photoluminescence (PL) of WS₂ is blue-shifted when measured on top of AuNCs and AuNCs coated with different amounts of Pd. AuNC-Pd Janus nanoparticles are prepared by depositing Pd atoms asymmetrically on AuNCs assembled into 2-D arrays on the surface of a glass substrate by the chemical reduction of Pd ions. Due to the large AuNC or AuNC-Pd/WS₂ Schottky barrier, the plasmon-induced hot electron transfer (PHET) from AuNCs and AuNCs coated with a high concentration of Pd is responsible for the red shift of the absorption spectrum of WS₂. Introducing a lower concentration of Pd to AuNCs increases the Schottky barrier further due to the formation of the Au-Pd equilibrium Fermi level of lower energy, reducing the efficiency of PHET. The effect of Pd on the Fermi level of AuNCs vanishes at high Pd deposition. Pauli blocking and phase-space filling are responsible for the blue shift of PL of WS₂ on top of AuNCs and AuNCs coated with Pd. The Pauli blocking effect is directly proportional to the PHET efficiency. This explains the significant blue shift of PL of WS₂ after integrating with AuNCs and AuNCs coated with a high concentration of Pd. Additionally, depositing Pd onto AuNCs elongates the lifetime of the hot electrons and enhances the PHET efficiency.

Covalent photofunctionalization and electronic repair of 2H-MoS2via nitrogen incorporation

A route towards covalent functionalization of chemically inert 2H-MoS₂ exploiting sulfur vacancies is explored by means of (TD)DFT and GW/BSE calculations. Functionalization via nitrogen incorporation at sulfur vacancies is shown to result in more stable covalent binding than via thiol incorporation. In this way, defective monolayer MoS₂ is repaired and the quasiparticle band structure as well as the remarkable optical properties of pristine MoS₂ are restored. Hence, defect-free functionalization with various molecules is possible. Our results for covalently attached azobenzene, as a prominent photo-switch, pave the way to create photoresponsive two-dimensional (2D) materials.