Tuning the Lattice Parameter of InxZnyP for Highly Luminescent Lattice-Matched Core/Shell Quantum Dots

Heterostructure seed-mediated synthesis of zinc phosphide quantum dots for bright band-edge emission

This study explores the synthesis of colloidal zinc phosphide quantum dots (QDs) by a novel In(Zn)P cluster seed-mediated approach, addressing the challenge of achieving low-cost, high-quality, nontoxic QDs suitable for optoelectronic applications. By intentionally limiting the amount of In precursor added to a hot solvent containing Zn and P precursors, In-rich In(Zn)P cluster seeds were formed. Subsequently, these clusters served as seeds for the growth of zinc phosphide nanocrystals, effectively using the remaining Zn and P precursors for further crystal growth. The synthesized QDs exhibited a tetragonal-like Zn3P2 structure and exceptional optical properties, including band-edge photoluminescence (PL) emission under ambient conditions. A ZnS shell was applied to further enhance the PL intensity, achieving a PL quantum yield of 40% and an average PL decay lifetime of 74 ns, while significantly improving the stability of the QDs. Temperature-dependent PL spectroscopy revealed significant resistance to thermal quenching with an exciton dissociation energy of 62 meV, underscoring the potential of this approach for advancing the field of optoelectronics. This method provides a pathway to fabricate zinc phosphide-based QDs with controlled optical properties and highlights the effective use of earth-abundant materials in the development of environmentally benign photonic materials.

Heavy-Metal-Free Colloidal Quantum Dots: Progress and Opportunities in Solar Technologies

Colloidal quantum dots (QDs) hold great promise as building blocks in solar technologies owing to their remarkable photostability and adjustable properties through the rationale involving size, atomic composition of core and shell, shapes, and surface states. However, most high-performing QDs in solar conversion contain hazardous metal elements, including Cd and Pb, posing significant environmental risks. Here, a comprehensive review of heavy-metal-free colloidal QDs for solar technologies, including photovoltaic (PV) devices, solar-to-chemical fuel conversion, and luminescent solar concentrators (LSCs), is presented. Emerging synthetic strategies to optimize the optical properties by tuning the energy band structure and manipulating charge dynamics within the QDs and at the QDs/charge acceptors interfaces, are analyzed. A comparative analysis of different synthetic methods is provided, structure-property relationships in these materials are discussed, and they are correlated with the performance of solar devices. This work is concluded with an outlook on challenges and opportunities for future work, including machine learning-based design, sustainable synthesis, and new surface/interface engineering.

Construction of Reverse Type-II InP/ZnxCd1-xS Core/Shell Quantum Dots with Low Interface Strain to Enhance Photocatalytic Hydrogen Evolution

The InP-based quantum dots (QDs) have attracted much attention in the field of photocatalytic H2 evolution. However, a shell should be used for InP-based photocatalytic systems to passivate the numerous surface defects. Different from the traditional InP-based core/shell QDs with Type-I or Type-II band alignment, herein, the "reverse Type-II" core/shell QDs in which both the conduction and valence bands of shell materials are more negative than those of core materials have been well-designed by regulating the ratio of Cd/Zn of the alloyed ZnxCd1-xS shell. The reverse Type-II band alignment would realize the spatial separation of photogenerated carriers. More importantly, the photogenerated holes tend to rest on the shell in the reverse Type-II QDs, which facilitate hole transfer to the surface, the rate-determining step for solar H2 evolution using QDs. Therefore, the obtained InP/Zn0.25Cd0.75S core/shell QDs exhibit superior photocatalytic activity and stability under visible light irradiation. The rate of solar H2 evolution reaches 376.19 μmol h-1 mg-1 at the initial 46 h, with a turnover number of ∼2,157,000 per QD within 70 h irradiation.

Enhancement mechanism of quantum yield in core/shell/shell quantum dots of ZnS-AgIn5S8/ZnIn2S4/ZnS

To achieve a high quantum yield (QY) of nanomaterials suitable for optical applications, we improved the optical properties of AgIn5S8 (AIS) quantum dots (QDs) by employing an alloyed-core/inner-shell/outer-shell (ZAIS/ZIS/ZnS) structure. We also investigated the mechanism of optical transitions to clarify the improvement of QYs. In AIS, the low-energy absorption near the band edge region is attributed to the weakly allowed band gap transition, which gains oscillator strength through state intermixing and electron-phonon coupling. The main photoluminescence is also ascribed to the weakly allowed band gap transition with characteristics of self-trapped excitonic emission. With alloying/shelling processes, the weakly allowed transition is enhanced by the evolution of the electronic structures in the alloyed core, which improves the band gap emission. In shelled structures, the nonradiative process is reduced by the reconstructed lattice and passivated surface, ultimately leading to a high QY of 85% in ZAIS/ZIS/ZnS. These findings provide new insights into the optical transitions of AIS because they challenge previous conclusions. In addition, our work elucidates the mechanism behind the enhancement of QY accomplished through alloying/shelling processes, providing strategies to optimize nontoxic QDs for various applications using a green chemistry approach.

Repercussions of the Inner Shell Layer on the Performance of Cd-Free Quantum Dots and Their Light-Emitting Diodes

Indium phosphide (InP) and zinc selenium tellurium (ZnSeTe) quantum dots (QDs) as less toxic alternatives have received substantial attention. The structure of QDs generally consists of a QD core, inner shell layer, and outer shell layer. We reckon that the inner shell layer, especially its components and thickness, have a significant influence on the optical and electronic performances of QDs. In this Perspective, we compare optical properties of these QDs with different inner shells and summarize how typical inner shell components and thickness influence their optical properties. The impact of the inner shell on the performance of QD light-emitting diodes (QLEDs) has also been discussed. The appropriate components and thickness of the inner shell both contribute to alleviate valence or lattice mismatch, thereby enhancing the performance of QDs. We expect that this Perspective could heighten awareness of the significance and impact of the inner shell layer in QDs and facilitate further development of QDs and QLEDs.

Colloidal InSb Quantum Dots for 1500 nm SWIR Photodetector with Antioxidation of Surface

III-V quantum dots (QDs) have emerged as significant alternatives to Cd- and Pb-based QDs, garnering notable attention over the past two decades. However, the understanding of III-V QDs, particularly in the short wave-infrared (SWIR) region, remains limited. InAs QDs are widely recognized as the most prominent SWIR QDs, but their absorption beyond 1400 nm presents various challenges. Consequently, InSb QDs with relatively narrower bandgaps have been investigated; however, research on their device applications is lacking. In this study, InSb QDs are synthesized with absorption ranging from 1000 to 1700 nm by introducing Cl- ions to enhance QD surface stability during synthesis. Additionally, it coated InAs and ZnSe shells onto the InSb QDs to validate photoluminescence in the SWIR region and improve photostability. Subsequently, these QDs are employed in the fabrication of photodetector devices, resulting in photodetection above 1500 nm using Pb-free QDs. The photodetection device exhibited an external quantum efficiency (EQE) of 11.4% at 1370 nm and 6.3% at 1520 nm for InSb core QDs, and 4.6% at 1520 nm for InSb/InAs core/shell QDs, marking the successful implementation of such a device. In detail, the 1520 nm for InSb core device showed a dark current density(JD ) value of: 1.46 × 10-9 A/cm2 , responsivity(R): 0.078 A/W, and specific detectivity based on the shot noise(Dsh *): 3.6 × 1012 Jones at 0 V.

InP/ZnS quantum dot photoluminescence modulation via in situ H2S interface engineering

InP quantum dots (QDs) are attracting significant interest as a potentially less toxic alternative to Cd-based QDs in many research areas. Although InP-based core/shell QDs with excellent photoluminescence properties have been reported so far, sophisticated interface treatment to eliminate defects is often necessary. Herein, using aminophosphine as a seeding source of phosphorus, we find that H₂S can be efficiently generated from the reaction between a thiol and an alkylamine at high temperatures. Apart from general comprehension that H₂S acts as a S precursor, it is revealed that with core etching by H₂S, the interface between InP and ZnS can be reconstructed with S^2- incorporation. Such a transition layer can reduce inherent defects at the interface, resulting in significant photoluminescence (PL) enhancement. Meanwhile, the size of the InP core could be further controlled by H₂S etching, which offers a feasible process to obtain wide band gap InP-based QDs with blue emission.

Bright InP Quantum Dots by Mid-Synthetic Modification with Zinc Halides

InP quantum dots (QDs) attract growing interest in recent years, owing to their environmental advantages upon applications in display and lighting. However, compared to Cd-based QDs and Pb-based perovskites, the synthesis of InP QDs with high optical quality is relatively more difficult. Here, we established a mid-synthetic modification approach to improve the optical properties of InP-based QDs. Tris(dimethylamino)phosphine ((DMA)₃P) and indium iodide were used to prepare InP QDs with a green emission (∼527 nm). By introducing zinc halides (ZnX₂) during the mid-synthetic process, the photoluminescence quantum yield (PLQY) of the resulting InP/ZnSeS/ZnS core/shell/shell QDs was increased to >70%, and the full-width-at-half-maximum (FWHM) could be narrowed to ∼40 nm. Transmission electron microscopy clearly showed the improvement of the QDs particle size distribution after introducing ZnX₂. It was speculated that ZnX₂ was bound to the surface of QDs as a Z-type ligand, which not only passivated surface defects and suppressed the emission of defect states but also prevented Ostwald ripening. The InP cores were also activated by ZnX₂, which made the growth of the ZnSeS shell more favorable. The photoluminescence properties started to be improved significantly only when the amount of ZnX₂ exceeded 0.5 mmol. As the amount increased, more ZnX₂ was distributed around the QDs to form a ligand layer, which prevented the shell precursor from crossing the ligand layer to the surface of the InP core, thus reducing the size of the InP/ZnSeS/ZnS QDs. This work revealed a new role of ZnX₂ and found a method for InP QDs with high brightness and low FWHM by the mid-synthetic modification, which would inspire the synthesis of even better InP QDs.

Zn-Doped P-Type InAs Nanocrystal Quantum Dots

Doped heavy metal-free III-V semiconductor nanocrystal quantum dots (QDs) are of great interest both from the fundamental aspects of doping in highly confined structures, and from the applicative side of utilizing such building blocks in the fabrication of p-n homojunction devices. InAs nanocrystals (NCs), that are of particular relevance for short-wave IR detection and emission applications, manifest heavy n-type character poising a challenge for their transition to p-type behavior. The p-type doping of InAs NCs is presented with Zn - enabling control over the charge carrier type in InAs QDs field effect transistors. The post-synthesis doping reaction mechanism is studied for Zn precursors with varying reactivity. Successful p-type doping is achieved by the more reactive precursor, diethylzinc. Substitutional doping by Zn²⁺ replacing In³⁺ is established by X-ray absorption spectroscopy analysis. Furthermore, enhanced near infrared photoluminescence is observed due to surface passivation by Zn as indicated from elemental mapping utilizing high-resolution electron microscopy corroborated by X-ray photoelectron spectroscopy study. The demonstrated ability to control the carrier type, along with the improved emission characteristics, paves the way towards fabrication of optoelectronic devices active in the short-wave infrared region utilizing heavy-metal free nanocrystal building blocks.

Indium arsenide quantum dots: an alternative to lead-based infrared emitting nanomaterials

Colloidal quantum dots (QDs) emitting in the infrared (IR) are promising building blocks for numerous photonic, optoelectronic and biomedical applications owing to their low-cost solution-processability and tunable emission. Among them, lead- and mercury-based QDs are currently the most developed materials. Yet, due to toxicity issues, the scientific community is focusing on safer alternatives. In this regard, indium arsenide (InAs) QDs are one of the best candidates as they can absorb and emit light in the whole near infrared spectral range and they are RoHS-compliant, with recent trends suggesting that there is a renewed interest in this class of materials. This review focuses on colloidal InAs QDs and aims to provide an up-to-date overview spanning from their synthesis and surface chemistry to post-synthesis modifications. We provide a comprehensive overview from initial synthetic methods to the most recent developments on the ability to control the size, size distribution, electronic properties and carrier dynamics. Then, we describe doping and alloying strategies applied to InAs QDs as well as InAs based heterostructures. Furthermore, we present the state-of-the-art applications of InAs QDs, with a particular focus on bioimaging and field effect transistors. Finally, we discuss open challenges and future perspectives.

Ultrafast Charge Carrier Dynamics in InP/ZnSe/ZnS Core/Shell/Shell Quantum Dots

The excellent performance of InP/ZnSe/ZnS core/shell/shell quantum dots (CSS-QDs) in light-emitting diodes benefits from the introduction of a ZnSe midshell. Understanding the changes of ultrafast carrier dynamics caused by the ZnSe midshell is important for their optoelectronic applications. Herein, we have compared the ultrafast carrier dynamics in CSS-QDs and InP/ZnS core/shell QDs (CS-QDs) using femtosecond transient absorption spectroscopy. The results show that the ZnSe midshell intensifies the electron delocalization and prolongs the in-band relaxation time of electrons from 238 fs to 350 fs, and that of holes from hundreds of femtoseconds to 1.6 ps. We also found that the trapping time caused by deep defects increased from 25.6 ps to 76 ps, and there were significantly reduced defect emissions in CSS-QDs. Moreover, the ZnSe midshell leads to a significantly increased density of higher-energy hole states above the valence band-edge, which may reduce the probability of Auger recombination caused by the positive trion. This work enhances our understanding of the excellent performance of the CSS-QDs applied to light-emitting diodes, and is likely to be helpful for the further optimization and design of optoelectronic devices based on the CSS-QDs.

Zinc Carboxylate Surface Passivation for Enhanced Optical Properties of In(Zn)P Colloidal Quantum Dots

Indium phosphide (InP) colloidal quantum dots (CQDs) have generated great interest as next-generation light-emitting materials owing to their narrow emission spectra and environment-friendly components. The minimized surface defects is essential to achieve narrow full-width at half-maximum (FWHM) and high photoluminescence quantum yield (PLQY). However, InP CQDs are readily oxidized in ambient condition, which results in formation of oxidation defect states on the surface of InP CQDs. Herein, we introduce a strategy to successfully passivate the surface defects of InP core by zinc complexes. The zinc carboxylates passivation reduces FWHM of InP CQDs from 130 nm to 70 nm and increases PLQY from 1% to 14% without shelling. Furthermore, the photoluminescence (PL) peak has shifted from 670 nm to 510 nm with an increase of zinc carboxylates passivation, which suggests that excessive zinc carboxylates functions as a size-regulating reagent in the synthesis.

Coherent InP/ZnS core@shell quantum dots with narrow-band green emissions

We report, for the first time, that the coherent growth of zinc sulfide (ZnS) on a colloidal indium phosphide (InP) quantum dot (QD) yields a InP/ZnS core/shell structure with a single lattice constant of 0.563 nm. Compared to the bulk crystal of zinc-blend (cubic) InP, the lattice of the core QD is compressed by 4.1%. In contrast, the lattice of the shell expands by 4.1% relative to the bulky ZnS crystal throughout the core/shell QD if the shell is thinner than or equal to 0.81 nm and the diameter of the core QD is smaller than 2.64 nm. Under these conditions, the bandgap of the core QD increases, resulting in a blueshift of absorption and photoluminescence (PL) spectra. The PL peak is centered at 523 nm. Furthermore, the PL quantum yield is enhanced up to 70% and the PL bandwidth narrows to 36 nm based on the strengthened quantum confinement effect. The temperature dependence of the PL properties is investigated to discuss the effect of the core/shell lattice coherency on the improved PL performances.

Full-Spectrum InP-Based Quantum Dots with Near-Unity Photoluminescence Quantum Efficiency

Photoluminescent color conversion by quantum dots (QDs) makes possible the formation of spectrum-on-demand light sources by combining blue LEDs with the light generated by a specific blend of QDs. Such applications, however, require a near-unity photoluminescence quantum efficiency since self-absorption magnifies disproportionally the impact of photon losses on the overall conversion efficiency. Here, we present a synthesis protocol for forming InP-based QDs with +90% quantum efficiency across the full visible spectrum from blue/cyan to red. The central features of our approach are as follows: (1) the formation of InP core QDs through one-batch-one-size reactions based on aminophosphine as the phosphorus precursor, (2) the introduction of a core/shell/shell InP/Zn(Se,S)/ZnS structure, and (3) the use of specific interfacial treatments, most notably the saturation of the ZnSe surface with zinc acetate prior to ZnS shell growth. Moreover, we adapted the composition of the Zn(Se,S) inner shell to attain the intended emission color while minimizing line broadening induced by the InP/ZnS lattice mismatch. The protocol is established by analysis of the QD composition and structure using multiple techniques, including solid-state nuclear magnetic resonance spectroscopy and Raman spectroscopy, and verified for reproducibility by having different researchers execute the same protocol. The realization of full-spectrum, +90% quantum efficiency will strongly facilitate research into light-matter interaction in general and luminescent color conversion in particular through InP-based QDs.

ZnCl2 Mediated Synthesis of InAs Nanocrystals with Aminoarsine

The most developed approaches for the synthesis of InAs nanocrystals (NCs) rely on pyrophoric, toxic, and not readily available tris-trimethylsilyl (or tris-trimethylgermil) arsine precursors. Less toxic and commercially available chemicals, such as tris(dimethylamino)arsine, have recently emerged as alternative As precursors. Nevertheless, InAs NCs made with such compounds need to be further optimized in terms of size distribution and optical properties in order to meet the standard reached with tris-trimethylsilyl arsine. To this aim, in this work we investigated the role of ZnCl₂ used as an additive in the synthesis of InAs NCs with tris(dimethylamino)arsine and alane N,N-dimethylethylamine as the reducing agent. We discovered that ZnCl₂ helps not only to improve the size distribution of InAs NCs but also to passivate their surface acting as a Z-type ligand. The presence of ZnCl₂ on the surface of the NCs and the excess of Zn precursor used in the synthesis enable the subsequent in situ growth of a ZnSe shell, which is realized by simply adding the Se precursor to the crude reaction mixture. The resulting InAs@ZnSe core@shell NCs exhibit photoluminescence emission at ∼860 nm with a quantum yield as high as 42±4%, which is a record for such heterostructures, given the relatively high mismatch (6%) between InAs and ZnSe. Such bright emission was ascribed to the formation, under our peculiar reaction conditions, of an In–Zn–Se intermediate layer between the core and the shell, as indicated by X-ray photoelectron spectroscopy and elemental analyses, which helps to release the strain between the two materials.

Advances and Challenges in Heavy-Metal-Free InP Quantum Dot Light-Emitting Diodes

Light-emitting diodes based on colloidal quantum dots (QLEDs) show a good prospect in commercial application due to their narrow spectral linewidths, wide color range, excellent luminance efficiency, and long operating lifetime. However, the toxicity of heavy-metal elements, such as Cd-based QLEDs or Pb-based perovskite QLEDs, with excellent performance, will inevitably pose a serious threat to people's health and the environment. Among heavy-metal-free materials, InP quantum dots (QDs) have been paid special attention, because of their wide emission, which can, in principle, be tuned throughout the whole visible and near-infrared range by changing their size, and InP QDs are generally regarded as one of the most promising materials for heavy-metal-free QLEDs for the next generation displays and solid-state lighting. In this review, the great progress of QLEDs, based on the fundamental structure and photophysical properties of InP QDs, is illustrated systematically. In addition, the remarkable achievements of QLEDs, based on their modification of materials, such as ligands exchange of InP QDs, and the optimization of the charge transport layer, are summarized. Finally, an outlook is shown about the challenge faced by QLED, as well as possible pathway to enhancing the device performance. This review provides an overview of the recent developments of InP QLED applications and outlines the challenges for achieving the high-performance devices.

Ultrafast dynamics and ultrasensitive single particle spectroscopy of optically robust core/alloy shell semiconductor quantum dots

A "one-pot one-step" synthesis method of Core/Alloy Shell (CAS) quantum dots (QDs) offers the scope of large scale synthesis in a less time consuming, more economical, highly reproducible and high-throughput manner in comparison to "multi-pot multi-step" synthesis for Core/Shell (CS) QDs. Rapid initial nucleation, and smooth & uniform shell growth lead to the formation of a compositionally-gradient alloyed hetero-structure with very significantly reduced interfacial trap density in CAS QDs. Thus, interfacial strain gets reduced in a much smoother manner leading to enhanced confinement for the photo-generated charge carriers in CAS QDs. Convincing proof of alloy-shelling for a CAS QD has been provided from HRTEM images at the single particle level. The band gap could be tuned as a function of composition, temperature, reactivity difference of precursors, etc. and a high PLQY and improved photochemical stability could be achieved for a small sized CAS QD. From the ultrafast exciton dynamics in CdSe and InP CAS QDs, it has been shown that (a) the hot exciton thermalization/relaxation happens in <500 fs, (b) hot electron trapping dynamics occurs within a ∼1 ps time scale, (c) band edge exciton trapping occurs within a 10-25 ps timescale and (d) for CdSe CAS QDs the hot hole gets trapped in about 35 ps. From fast PL decay dynamics, it has been shown that the amplitude of the intermediate time constant can be correlated with the PLQY. A model has been provided to understand these ultrafast to fast exciton dynamical processes. At the ultrasensitive single particle level, unlike CS QDs, CdSe CAS QDs have been shown to exhibit (a) constancy of PL_max (i.e. no bluing) and (b) constancy of PL intensity (i.e. no bleaching) of the single CAS QDs for continuous irradiation for one hour under an air atmosphere. Thus, CAS QDs hold the promise of being a superior optical probe in comparison to CS QDs both at the ensemble and at the single particle level, leading to enhanced flexibility of the CAS QDs towards designing and developing next generation application devices.

Suppressing the Cation Exchange at the Core/Shell Interface of InP Quantum Dots by a Selenium Shielding Layer Enables Efficient Green Light-Emitting Diodes

Indium phosphide (InP) quantum dots (QDs) have demonstrated great potential for light-emitting diode (LED) application because of their excellent optical properties and nontoxicity. However, the over performance of InP QDs still lags behind that of CdSe QDs, and one of main reasons is that the Zn traps in InP lattices can be formed through the cation exchange in the ZnSe shell growth process. Herein, we realized highly luminescent InP/ZnSe/ZnS QDs by constructing Se-rich shielding layers on the surfaces of InP cores, which simultaneously protect the InP cores from the invasion of Zn²⁺ into InP lattices and facilitate the ZnSe shell growth via the reaction between Zn²⁺ precursors and Se^2- shielding layers. The as-synthesized green InP/ZnSe/ZnS QDs had a high photoluminescence quantum yield (PLQY) of up to 87%. The fabricated QLEDs present a peak external quantum efficiency of 6.2% with an improved efficiency roll-off at high luminance, which is 2 times higher than that of control devices.

InP-Bovine Serum Albumin Conjugates as Energy Transfer Probes

The use of indium phosphide (InP) quantum dots (QDs) as biological fluorophores is limited by the low photoluminescence quantum yield (ϕ_PL) and the lack of effective bioconjugation strategies. The former issue has been addressed by introducing a strain relaxing intermediate shell such as ZnSe, GaP etc. that significantly enhances the ϕ_PL of InP. Herein, we present an effective strategy for the conjugation of emissive InP/GaP/ZnS QDs with a commonly used globular protein, namely bovine serum albumin (BSA), which generate colloidally stable QD bioconjugates, labeled as InP-BSA and demonstrate its use as energy transfer probes. The conjugate contains one protein per QD, and the circular dichroism spectra of BSA and InP-BSA exhibit similar fractions of α-helix and β-sheet, reflective of the fact that the secondary structure of the protein is intact on binding. More importantly, the fluorescence polarization studies corroborate the fact that the bound protein can hold a variety of chromophoric acceptors. Upon selectively exciting the InP-BSA component in the presence of bound chromophores, a reduction in the emission intensity of the donor is observed with a concomitant increase in emission of the acceptor. Time-resolved investigations further confirm an efficient nonradiative energy transfer from InP-BSA to the bound acceptors.

Highly luminescent red-emitting In(Zn)P quantum dots using zinc oxo cluster: synthesis and application to light-emitting diodes

Despite the importance of separating nucleation steps from growth steps for the production of monodisperse highly luminescent In(Zn)P quantum dots (QDs), the practical implementation of this strategy is hindered by the high reactivity and fast depletion of conventional P precursors. This problem can be mitigated through the use of (i) Zn oxo clusters, which effectively regulate the kinetics of QD growth and prevent the fast depletion of conventional P precursors in the nucleation step, or (ii) seed-mediated continuous growth methods, which avoid secondary nucleation in the growth step and yield red-emitting InP QDs. Herein, we combine approaches (i) and (ii) to synthesize red-emitting In(Zn)P QDs with a high photoluminescence quantum yield (>93%) and a low emission bandwidth (full width at half maximum = 38 nm), revealing that our strategy hinders the carboxylate ketonization-induced generation of byproducts and suppresses the surface oxidation of In(Zn)P QDs during growth steps. The prepared In(Zn)P QDs are used to fabricate QD light-emitting diodes with a maximum brightness of 1164 cd m^-2 and an external quantum efficiency of 3.61%. Thus, our results pave the way to the replacement of toxic Cd- and Pb-based QDs with more eco-friendly Zn- and In-based analogs for a variety of applications.

Investigating the role of zinc precursor during the synthesis of the core of III-V QDs

To investigate the role of Zn precursor based on hard and soft acids and bases theory, we introduced Mn and Ca precursors along with Zn precursor. The synthesis of III-V cores with these three metal precursors revealed that the roles of Zn precursor are as a reaction suppressant, a size regulator, and a dopant. Furthermore, we discovered which role was primarily played by Zn precursor at different concentrations.

Luminescent Anisotropic Wurtzite InP Nanocrystals

Indium phosphide (InP) nanocrystals are emerging as an alternative to heavy metal containing nanocrystals for optoelectronic applications but lag behind in terms of synthetic control. Herein, luminescent wurtzite InP nanocrystals with narrow size distribution were synthesized via a cation exchange reaction from hexagonal Cu₃P nanocrystals. A comprehensive surface treatment with NOBF₄ was performed, which removes excess copper while generating stoichiometric In/P nanocrystals with fluoride surface passivation. The attained InP nanocrystals manifest a highly resolved absorption spectrum with a narrow emission line of 80 meV, and photoluminescence quantum yield of up to 40%. Optical anisotropy measurements on ensemble and single particle bases show the occurrence of polarized transitions directly mirroring the anisotropic wurtzite lattice, as also manifested from modeling of the quantum confined electronic levels. This shows a green synthesis path for achieving wurtzite InP nanocrystals with desired optoelectronic properties including color purity and light polarization with potential for diverse optoelectronic applications.

Increasing the Energy Gap between Band-Edge and Trap States Slows Down Picosecond Carrier Trapping in Highly Luminescent InP/ZnSe/ZnS Quantum Dots

Non-toxic InP-based nanocrystals have been developed for promising candidates for commercial optoelectronic applications and they still require further improvement on photophysical properties, compared to Cd-based quantum dots (QDs), for better device efficiency and long-term stability. It is, therefore, essential to understand the precise mechanism of carrier trapping even in the state-of-the-art InP-based QD with near-unity luminescence. Here, it is shown that using time-resolved spectroscopic measurements of systematically size-controlled InP/ZnSe/ZnS core/shell/shell QDs with the quantum yield close to one, carrier trapping decreases with increasing the energy difference between band-edge and trap states, indicating that the process follows the energy gap law, well known in molecular photochemistry for nonradiative internal conversion between two electronic states. Similar to the molecular view of the energy gap law, it is found that the energy gap between the band-edge and trap states is closely associated with ZnSe phonons that assist carrier trapping into defects in highly luminescent InP/ZnSe/ZnS QDs. These findings represent a striking departure from the generally accepted view of carrier trapping mechanism in QDs in the Marcus normal region, providing a step forward understanding how excitons in nanocrystals interact with traps, and offering valuable guidance for making highly efficient and stable InP-based QDs.

Tuning the interfacial stoichiometry of InP core and InP/ZnSe core/shell quantum dots

We demonstrate fine-tuning of the atomic composition of InP/ZnSe quantum dots (QDs) at the core/shell interface. Specifically, we control the stoichiometry of both anions (P, As, S, and Se) and cations (In and Zn) at the InP/ZnSe core/shell interface and correlate these changes with the resultant steady-state and time-resolved optical properties of the nanocrystals. The use of reactive trimethylsilyl reagents results in surface-limited reactions that shift the nanocrystal stoichiometry to anion-rich and improve epitaxial growth of the shell layer. In general, anion deposition on the InP QD surface results in a redshift in the absorption, quenching of the excitonic photoluminescence, and a relative increase in the intensity of broad trap-based photoluminescence, consistent with delocalization of the exciton wavefunction and relaxation of exciton confinement. Time-resolved photoluminescence data for the resulting InP/ZnSe QDs show an overall small change in the decay dynamics on the ns timescale, suggesting that the relatively low photoluminescence quantum yields may be attributed to the creation of new thermally activated charge trap states and likely a dark population that is inseparable from the emissive QDs. Cluster-model density functional theory calculations show that the presence of core/shell interface anions gives rise to electronic defects contributing to the redshift in the absorption. These results highlight a general strategy to atomistically tune the interfacial stoichiometry of InP QDs using surface-limited reaction chemistry allowing for precise correlations with the electronic structure and photophysical properties.

Effects of Interfacial Oxidative Layer Removal on Charge Carrier Recombination Dynamics in InP/ZnSexS1-x Core/Shell Quantum Dots

Red-light-emitting InP/ZnSe_xS_1-x core/shell quantum dots (QDs) were prepared by one-pot synthesis with optimal hydrogen fluoride (HF) treatment. Most of the surficial oxidative species could be removed, and the dangling bonds would be passivated by Zn ions for the InP cores during HF treatment, which would be beneficial to the subsequent ZnSe_xS_1-x shell coating. Three-dimensional time-resolved photoluminescence spectra of the QD samples were analyzed by singular value decomposition global fitting to determine the radiative and nonradiative lifetimes of charge carriers. A proposed model illustrated that the charge carriers in the InP/ZnSe_xS_1-x QDs with interfacial oxidative layer removal would evidently recombine through radiative pathways, mainly from the conduction band to the valence band (lifetime, 33 ns) and partially from the trap states (lifetime, 150 ns). This work offers the important physical insight into the charge carrier dynamics of low-toxicity QDs which have the desired optical properties for optoelectronic applications.

Cadmium-Free and Efficient Type-II InP/ZnO/ZnS Quantum Dots and Their Application for LEDs

It is a generally accepted perspective that type-II nanocrystal quantum dots (QDs) have low quantum yield due to the separation of the electron and hole wavefunctions. Recently, high quantum yield levels were reported for cadmium-based type-II QDs. Hence, the quest for finding non-toxic and efficient type-II QDs is continuing. Herein, we demonstrate environmentally benign type-II InP/ZnO/ZnS core/shell/shell QDs that reach a high quantum yield of ∼91%. For this, ZnO layer was grown on core InP QDs by thermal decomposition, which was followed by a ZnS layer via successive ionic layer adsorption. The small-angle X-ray scattering shows that spherical InP core and InP/ZnO core/shell QDs turn into elliptical particles with the growth of the ZnS shell. To conserve the quantum efficiency of QDs in device architectures, InP/ZnO/ZnS QDs were integrated in the liquid state on blue light-emitting diodes (LEDs) as down-converters that led to an external quantum efficiency of 9.4% and a power conversion efficiency of 6.8%, respectively, which is the most efficient QD-LED using type-II QDs. This study pointed out that cadmium-free type-II QDs can reach high efficiency levels, which can stimulate novel forms of devices and nanomaterials for bioimaging, display, and lighting.

Waste- and Cd-Free Inkjet-Printed Zn(O,S) Buffer for Cu(In,Ga)(S,Se)2 Thin-Film Solar Cells

Thin film semiconductors grown using chemical bath methods produce large amounts of waste solvent and chemicals that then require costly waste processing. We replace the toxic chemical bath deposited CdS buffer layer from our Cu(In,Ga)(S,Se)₂ (CIGS)-based solar cells with a benign inkjet-printed and annealed Zn(O,S) layer using 230 000 times less solvent and 64 000 times less chemicals. The wetting and final thickness of the Zn(O,S) layer on the CIGS is controlled by a UV ozone treatment and the drop spacing, whereas the annealing temperature and atmosphere determine the final chemical composition and band gap. The best solar cell using a Zn(O,S) air-annealed layer had an efficiency of 11%, which is similar to the best conventional CdS buffer layer device fabricated in the same batch. Improving the Zn(O,S) wetting and annealing conditions resulted in the best device efficiency of 13.5%, showing the potential of this method.

Electrochemical Charging Effect on the Optical Properties of InP/ZnSe/ZnS Quantum Dots

Semiconductor quantum dots (QDs) are spotlighted as a key type of emissive material for the next generation of light-emitting diodes (LEDs). This work presents the investigation of the electrochemical charging effect on the absorption and emission of the InP/ZnSe/ZnS QDs with different mid-shell thicknesses. The excitonic peak is gradually bleached during electrochemical charging, which is caused by 1S_e (or 1S_h ) state filling when the electron (or hole) is injected into the InP core. Additional charges also lead to photoluminescence (PL) intensity reduction, however, it is greatly mitigated as the mid-shell thickness increases. Various PL measurements reveal that the PL reduction under electrochemical charging is attributed to the acoustic phonon-assisted Auger recombination. Here, the Auger recombination in QDs with a thick mid-shell is reduced under the electrochemically charged condition, indicating that QDs with larger volume are more stable emitters in charge-injecting devices such as LEDs. Furthermore, the negative and positive trion Auger recombination rate constants are estimated, respectively, via electrochemical charging. The negative trion Auger rate constants decrease with an increase in the mid-shell thickness increases, whereas the positive trion Auger rate constants are not heavily reliant on the mid-shell thickness.

Toward an Understanding of Fundamentals Governing the Elemental Mercury Sequestration by Metal Chalcogenides

The lack of fundamental understanding of the chemistry governing elemental mercury (Hg⁰) immobilization over metal chalcogenides (MChals) is the key challenge impeding the interpretations of Hg⁰ behaviors in global cycles. This work therefore made the first endeavor toward the establishment of a roadmap capable of describing and depicting Hg⁰ sequestrations by various MChals. The results suggest that the binding energy between the metal cations and chalcogen anions is a proper descriptor that could predict the immobilization behaviors of Hg⁰ over zinc chalcogenides (ZnS and ZnSe) that exhibit an identical molecular structure, i.e., the lower the binding energy was, the higher the Hg⁰ sequestration performance that was obtained. The validity of this descriptor was further demonstrated over a series of MChals sharing structural similarities. A scaling relationship was thus established, which further proved the Hg⁰ immobilization performance of MChals was generally in reverse proportion to the above-mentioned binding energy. Although there is still a long way toward the proposal of a full roadmap that can predict and depict the Hg⁰ immobilization behaviors over all MChals, this work marks the first step on this road and provides guides for further studies by understanding the fundamentals governing Hg⁰ sequestration over MChals with structural similarities.

Evolution from unimolecular to colloidal-quantum-dot-like character in chlorine or zinc incorporated InP magic size clusters

Magic-sized clusters (MSCs) can be isolated as intermediates in quantum dot (QD) synthesis, and they provide pivotal clues in understanding QD growth mechanisms. We report syntheses for two families of heterogeneous-atom-incorporated InP MSCs that have chlorine or zinc atoms. All the MSCs could be directly synthesized from conventional molecular precursors. Alternatively, each series of MSCs could be prepared by sequential conversions. 386-InP MSCs could be converted to F360-InP:Cl MSCs, then to F399-InP:Cl MSCs. Similarly, F360-InP:Zn MSCs could be converted to F408-InP:Zn MSCs, then to F393-InP:Zn MSCs. As the conversion proceeded, evolution from uni-molecule-like to QD-like characters was observed. Early stage MSCs showed active inter-state conversions in the excited states, which is characteristics of small molecules. Later stage MSCs exhibited narrow photoinduced absorptions at lower-energy region like QDs. The crystal structure also gradually evolved from polytwistane to more zinc-blende.

Developing Lattice Matched ZnMgSe Shells on InZnP Quantum Dots for Phosphor Applications

Indium phosphide quantum dots (QDs) have drawn attention as alternatives to cadmium- and lead-based QDs that are currently used as phosphors in lamps and displays. The main drawbacks of InP QDs are, in general, a lower photoluminescence quantum yield (PLQY), a decreased color purity, and poor chemical stability. In this research, we attempted to increase the PLQY and stability of indium phosphide QDs by developing lattice matched InP/MgSe core-shell nanoheterostructures. The choice of MgSe comes from the fact that, in theory, it has a near-perfect lattice match with InP, provided MgSe is grown in the zinc blende crystal structure, which can be achieved by alloying with zinc. To retain lattice matching, we used Zn in both the core and shell and we fabricated InZnP/Zn _x Mg_1-x Se core/shell QDs. To identify the most suitable conditions for the shell growth, we first developed a synthesis route to Zn _x Mg_1-x Se nanocrystals (NCs) wherein Mg is effectively incorporated. Our optimized procedure was employed for the successful growth of Zn _x Mg_1-x Se shells around In(Zn)P QDs. The corresponding core/shell systems exhibit PLQYs higher than those of the starting In(Zn)P QDs and, more importantly, a higher color purity upon increasing the Mg content. The results are discussed in the context of a reduced density of interface states upon using better lattice matched Zn _x Mg_1-x Se shells.

Growth of InZnP/ZnS core/shell quantum dots with wide-range and refined tunable photoluminescence wavelengths

Owing to their environmentally friendly characteristic, InP-based quantum dots (QDs) show great potential in various fields as an alternative to Cd-based QDs. However, the current mainstream synthesis process, the (TMS)₃P-based injection method, still faces many challenges, such as the high cost of (TMS)₃P and complex temperature control. In contrast, the solvothermal method is considered to be more feasible and reproducible. Despite its potential advantages, little has been done to understand how the precursors influence the synthesis of InP QDs using the solvothermal method. In this research, InZnP/ZnS QDs were synthesized using practical phosphorus precursors (DEA)₃P or (DMA)₃P. Through the feasible regulation of zinc, indium, phosphorus and sulfur precursors, the band gap of the QDs could be widely and accurately tuned, and a much wider photoluminescence wavelength ranging from 484 nm to 651 nm could be achieved. Furthermore, InI₃ and InBr₃ contributed to the blueshift in the PL wavelengths, and the combination of (DEA)₃P, (DMA)₃P, n-DDT and t-DDT refined the PL wavelength with a small tuning gap of 5 nm.

The effects of discrete and gradient mid-shell structures on the photoluminescence of single InP quantum dots

We investigated the dependence of the spectral diffusion and blinking behaviors of indium phosphide (InP) based core/shell/shell quantum dots (QDs) on their mid-shell compositions. We synthesized two types of core/shell/shell QDs having different mid-shell structures by controlling the shell thickness, the total sizes, and the selenium to sulfur ratios. The QDs with a discrete mid-shell (DS-QDs) exhibited a higher photoluminescence (PL) quantum yield (QY) and a narrower PL linewidth than the QDs with a gradient mid-shell (GS-QDs). By analyzing X-ray diffraction (XRD) patterns, and Raman spectra, we found that GS-QDs showed a larger lattice mismatch between the core and the shell than DS-QDs. Also, the spectral diffusion, PL blinking, Auger ionization efficiencies, and the lifetime blinking behavior on single QDs revealed that DS-QDs were nearly unaffected by the defect traps.

Unraveling the role of zinc complexes on indium phosphide nanocrystal chemistry

The addition of zinc complexes to the syntheses of indium phosphide nanocrystals (InP NCs) has become commonplace, due to their ability to alter and significantly improve observed optical properties. In this paper, the role of zinc complexes on the synthesis and observed properties of InP is carefully examined. Produced InP and InP:Zn²⁺ NCs are thoroughly characterized from both structural (core and surface) and optical perspectives over a wide range of Zn²⁺ compositions (0%-43% atomic content). We find no differences in the physical (NC size and polydispersity) and structural properties (crystallographic phase) of InP and InP:Zn²⁺ NCs. Optically, significant changes are observed when zinc is added to InP syntheses, including blueshifted absorption edges and maxima, increased quantum yields, and the near elimination of surface state emission. These improved optical properties result from surface passivation by zinc carboxylate moieties. Changes to the optical properties begin at zinc concentrations as low as 5%, demonstrating the high sensitivity of InP optical properties to exogenous species.

Double-Shelled InP/ZnMnS/ZnS Quantum Dots for Light-Emitting Devices

Traditionally, ZnS or ZnSe is chosen as the shell material for InP quantum dots (QDs). However, for green or blue InP QDs, the ZnSe shell will form a type-II structure resulting in a redshift of the emission spectrum. Although the band gap of ZnS is wider, its lattice mismatch with InP is larger (∼7.7%), resulting in more defect states and lowered quantum yield (QY). To overcome the above problems, we introduced the intermediate ZnMnS layer in InP/ZnMnS/ZnS QDs. The wide band gap of the intermediate layer (3.7 eV) can confine the electrons and holes in the core completely, and the formation of the type-II structure is avoided. As a result, green InP-based QDs with QY up to 80% were obtained. By adjusting the halogen ratios of the ZnX₂ precursor, the minimum and maximum emission peaks are 470 and 620 nm, respectively, covering the whole visible range. Finally, after optimizing the coating shell process, the maximum external quantum efficiency of QD light-emitting diodes fabricated from this InP-based green light QDs can reach 2.7%.

Synthesis of Colloidal Blue-Emitting InP/ZnS Core/Shell Quantum Dots with the Assistance of Copper Cations

Colloidal InP quantum dots (QDs) have been considered as one of the most promising candidates for display and biolabeling applications because they are intrinsically toxicity-free and exhibit high photoluminescence. On account of the uncontrollable nucleation and growth during the synthesis of InP, obtaining high-quality blue-emitting InP QDs with uniform size distribution remains a challenge. Herein, we employ a novel synthetic approach for producing blue-emitting InP/ZnS core/shell QDs with the assistance of copper cations. The studies reveal that the copper ions could combine with phosphorus precursor to form hexagonal Cu_3-xP nanocrystals, which competed with the nucleation process of InP QDs, resulting in the smaller sized InP QDs with blue photoluminescence emission. After the passivation of InP QDs with the ZnS shell, the synthesized InP/ZnS core/shell QDs present bright blue emission (∼425 nm) with a photoluminescence quantum yield of ∼25%, which is the shortest wavelength emission for InP QDs to date. This research provides a new way to synthesize ultrasmall semiconductor nanocrystals.

Suppressed Blinking under Normal Air Atmosphere in Toxic-Metal-Free, Small Sized, InP-Based Core/Alloy-Shell/Shell Quantum Dots

Suppressed blinking has been reported in large (diameter ∼14.1 nm) core/shell InP quantum dots (QDs) under reduced air environment. We report here suppressed blinking with approximately four times smaller (diameter ∼3.6 nm) core/alloy-shell/shell InP QDs under ambient air atmosphere. The ⟨ON fraction⟩ has been obtained to be 0.65. Approximately 26% of the single QDs exhibit ON fraction >80%. The smaller ON exponent (1.19) magnitude in comparison to the OFF exponent (1.45) indicates longer ON events are interrupted by smaller OFF events. ON event truncation time is ∼1.5 times that of the OFF event, signifying the detrapping rate is much higher than the trapping rate. Interestingly, the detrapping rate/trapping rate (single-particle level property) could be directly correlated to the photoluminescence quantum yield (ensemble level property). An additional exponential term required to fit the probability density distribution of the ON event duration could be correlated with hole trapping, leading to extended ON times (>60 s).

Influence of the Core/Shell Structure of Indium Phosphide Based Quantum Dots on Their Photostability and Cytotoxicity

With the goal to improve their photostability, InP-based QDs are passivated with three types of inorganic shells, namely (i) a gradient ZnSexS1-x shell, (ii) an additional ZnS shell on top of the gradient shell with two different thicknesses (core/shell/shell, CSS), (iii) an alumina coating on top of ZnS. All three systems have photoluminescence quantum yields (PLQY) > 50% and similar PL decay times (64-67 ns). To assess their photostability they are incorporated into a transparent poly (methyl methacrylate) (PMMA) matrix and exposed to continuous irradiation with simulated sunlight in a climate chamber. The alumina coated core/shell system exhibits the highest stability in terms of PLQY retention as well as the lowest shift of the PL maximum and lowest increase of the PL linewidth, followed by the CSS QDs and finally the gradient shell system. By means of XPS studies we identify the degradation of the ZnS outer layer and concomitant oxidation of the emissive InZnP core as the main origins of degradation in the gradient structure. These modifications do not occur in the case of the alumina-capped sample, which exhibits excellent chemical stability. The gradient shell and CSS systems could be transferred to the aqueous phase using surface ligand exchange with penicillamine. Cytotoxicity studies on human primary keratinocytes revealed that exposure for 24 h to 6.25-100 nM of QDs did not affect cell viability. However, a trend toward reduced cell proliferation is observed for higher concentrations of gradient shell and CSS QDs with a thin ZnS shell, while CSS QDs with a thicker ZnS shell do not exhibit any impact.

Synthesis of far-red- and near-infrared-emitting Cu-doped InP/ZnS (core/shell) quantum dots with controlled doping steps and their surface functionalization for bioconjugation

In this study, we designed and synthesized far-red- and near-infrared-emitting Cu-doped InP-based quantum dots (QDs), and we also demonstrated their highly specific and sensitive biological imaging ability. Cu-doped InP/ZnS (core/shell) QDs were prepared using the hot colloidal synthesis method in the organic phase. The ZnS shell passivates the surface and improves the photoluminescence (PL) intensity. However, the InP : Cu/ZnS (core : dopants/shell) QDs, which were obtained after the Cu dopant was incorporated into bare InP QDs, followed by ZnS shell coating, had relatively low PL intensities (maximum PL quantum yield (QY) was only ∼16%) presumably due to the formation of defect sites in the InP-core QDs caused by dopant migration from the InP core to the ZnS shell. We prepared high-quality InP/ZnS : Cu/ZnS (core/shell : dopant/outer-shell) QDs, where thin ZnS shell layers were grown on bare InP QDs prior to Cu ion doping to prevent dopant migration and obtained PL QYs as high as 40%. The native hydrophobic ligands of the as-synthesized Cu-doped QDs were replaced with hydrophilic ligands including dihydrolipoic acid and a zwitterionic ligand, which rendered the QDs water-soluble. These QDs exhibited remarkable colloidal stabilities over a wide pH range, with hydrodynamic diameters less than 10 nm. Modified QD surfaces can also be used in conjugation with other functional moieties to apply highly specific and sensitive imaging probes with very low background levels. As a proof-of-concept study, we successfully demonstrated the selective imaging of streptavidin beads with biotin-conjugated QDs. These decorated Cu-doped InP/ZnS (core/shell) QDs are promising biological-probe candidates for imaging and assaying with reduced concerns regarding toxicity.

Chemical Synthesis and Applications of Colloidal Metal Phosphide Nanocrystals

Colloidal nanocrystals (NCs) have emerged as promising materials in optoelectronic devices and biological imaging application due to their tailorable properties through size, shape, and composition. Among these NCs, metal phosphide is an important class, in parallel with metal chalcogenide. In this review, we summarize the recent progress regarding the chemical synthesis and applications of colloidal metal phosphide NCs. As the most important metal phosphide NCs, indium phosphide (InP) NCs have been intensively investigated because of their low toxicity, wide and tunable emission range from visible to the near-infrared region. Firstly, we give a brief overview of synthetic strategies to InP NCs, highlighting the benefit of employing zinc precursors as reaction additive and the importance of different phosphorus precursors to improve the quality of the InP NCs, in terms of size distribution, quantum yield, colloidal stability, and non-blinking behavior. Next, we discuss additional synthetic techniques to overcome the issues of lattice mismatch in the synthesis of core/shell metal phosphide NCs, by constructing an intermediate layer between core/shell or designing a shell with gradient composition in a radial direction. We also envision future research directions of InP NCs. The chemical synthesis of other metal phosphide NCs, such as II-V metal phosphide NCs (Cd3P2, Zn3P2) and transition metal phosphides NCs (Cu3P, FeP) is subsequently introduced. We finally discuss the potential applications of colloidal metal phosphide NCs in photovoltaics, light-emitting diodes, and lithium ion battery. An overview of several key applications based on colloidal metal phosphide NCs is provided at the end.

Highly Photoconductive InP Quantum Dots Films and Solar Cells

InP and InZnP colloidal quantum dots (QDs) are promising materials for application in light-emitting devices, transistors, photovoltaics, and photocatalytic cells. In addition to possessing an appropriate bandgap, high absorption coefficient, and high bulk carrier mobilities, the intrinsic toxicity of InP and InZnP is much lower than for competing QDs that contain Cd or Pb-providing a potentially safer commercial product. However, compared to other colloidal QDs, InP QDs remain sparsely used in devices and their electronic transport properties are largely unexplored. Here, we use time-resolved microwave conductivity measurements to study charge transport in films of InP and InZnP colloidal quantum dots capped with a variety of short ligands. We find that transport in InP QDs is dominated by trapping effects, which are mitigated in InZnP QDs. We improve charge carrier mobilities with a range of ligand-exchange treatments and for the best treatments reach mobilities and lifetimes on par with those of PbS QD films used in efficient solar cells. To demonstrate the device-grade quality of these films, we construct solar cells based on InP & InZnP QDs with power conversion efficiencies of 0.65 and 1.2%, respectively. This represents a large step forward in developing Cd- and Pb-free next-generation optoelectronic devices.

Finding and Fixing Traps in II-VI and III-V Colloidal Quantum Dots: The Importance of Z-Type Ligand Passivation

Energy levels in the band gap arising from surface states can dominate the optical and electronic properties of semiconductor nanocrystal quantum dots (QDs). Recent theoretical work has predicted that such trap states in II-VI and III-V QDs arise only from two-coordinated anions on the QD surface, offering the hypothesis that Lewis acid (Z-type) ligands should be able to completely passivate these anionic trap states. In this work, we provide experimental support for this hypothesis by demonstrating that Z-type ligation is the primary cause of PL QY increase when passivating undercoordinated CdTe QDs with various metal salts. Optimized treatments with InCl₃ or CdCl₂ afford a near-unity (>90%) photoluminescence quantum yield (PL QY), whereas other metal halogen or carboxylate salts provide a smaller increase in PL QY as a result of weaker binding or steric repulsion. The addition of non-Lewis acidic ligands (amines, alkylammonium chlorides) systematically gives a much smaller but non-negligible increase in the PL QY. We discuss possible reasons for this result, which points toward a more complex and dynamic QD surface. Finally we show that Z-type metal halide ligand treatments also lead to a strong increase in the PL QY of CdSe, CdS, and InP QDs and can increase the efficiency of sintered CdTe solar cells. These results show that surface anions are the dominant source of trap states in II-VI and III-V QDs and that passivation with Lewis acidic Z-type ligands is a general strategy to fix those traps. Our work also provides a method to tune the PL QY of QD samples from nearly zero up to near-unity values, without the need to grow epitaxial shells.

Synthesis and Degradation of Cadmium-Free InP and InPZn/ZnS Quantum Dots in Solution

This study advances the chemical research community toward the goal of replacing toxic cadmium-containing quantum dots (QDs) with environmentally benign InP QDs. The InP QD synthesis uniquely combines the previously reported use of InP magic-sized clusters (MSCs) as a single-source precursor for indium and phosphorus to form InP QDs, with zinc incorporation and subsequent ZnS shelling, to form InPZn/ZnS QDs with luminescence properties comparable to those of commonly used cadmium-containing luminescent QDs. The resulting InPZn/ZnS QDs have an emission quantum yield of about 50% across a broad range of emission peak wavelengths and emission peaks averaging 50 nm fwhm. The emission peak wavelength can be easily tuned by varying the Zn/In ratio in the reaction mixture. The strategy of using zinc stearate to tune the emission properties is advantageous as it does not lead to a loss of emission quantum yield or emission peak broadening. Although the initial optical properties of InP and InPZn/ZnS QDs are promising, thermal stability measurements of InPZn QDs show significant degradation in the absence of a shell compared to the CdSe QDs particularly at increased temperature in the presence of oxygen, which is indicative of thermal oxidation. There is no significant difference in the degradation rate of InP QDs made from molecular precursors and from MSCs. Additionally, the emission intensity and quantum yield of InPZn/ZnS QDs when purified and diluted in organic solvents under ambient conditions decrease significantly compared to those of CdSe/ZnS QDs. This indicates instability of the ZnS shell when prepared by common literature methods. This must be improved to realize high-quality, robust Cd-free QDs with the capability of replacing CdSe QDs in QD technologies.

Finding and Fixing Traps in II-VI and III-V Colloidal Quantum Dots: The Importance of Z-Type Ligand Passivation

Energy levels in the band gap arising from surface states can dominate the optical and electronic properties of semiconductor nanocrystal quantum dots (QDs). Recent theoretical work has predicted that such trap states in II–VI and III–V QDs arise only from two-coordinated anions on the QD surface, offering the hypothesis that Lewis acid (Z-type) ligands should be able to completely passivate these anionic trap states. In this work, we provide experimental support for this hypothesis by demonstrating that Z-type ligation is the primary cause of PL QY increase when passivating undercoordinated CdTe QDs with various metal salts. Optimized treatments with InCl₃ or CdCl₂ afford a near-unity (>90%) photoluminescence quantum yield (PL QY), whereas other metal halogen or carboxylate salts provide a smaller increase in PL QY as a result of weaker binding or steric repulsion. The addition of non-Lewis acidic ligands (amines, alkylammonium chlorides) systematically gives a much smaller but non-negligible increase in the PL QY. We discuss possible reasons for this result, which points toward a more complex and dynamic QD surface. Finally we show that Z-type metal halide ligand treatments also lead to a strong increase in the PL QY of CdSe, CdS, and InP QDs and can increase the efficiency of sintered CdTe solar cells. These results show that surface anions are the dominant source of trap states in II–VI and III–V QDs and that passivation with Lewis acidic Z-type ligands is a general strategy to fix those traps. Our work also provides a method to tune the PL QY of QD samples from nearly zero up to near-unity values, without the need to grow epitaxial shells.