Planar Hot-Electron Photodetection with Tamm Plasmons

High-Performance Planar Broadband Hot-Electron Photodetection through Platinum-Dielectric Triple Junctions

Recently, planar and broadband hot-electron photodetectors (HE PDs) were established but exhibited degraded performances due to the adoptions of the single-junction configurations and the utilizations of absorbable films with thicknesses larger than the electronic mean free path. In this work, we present a five-layer design for planar HE PDs assisted by triple junctions in which an ultrathin Pt layer dominates the broadband and displays strong optical absorption (>0.9 from 900 nm to 1700 nm). Optical studies reveal that the optical admittance matching between optical admittances of designed device and air at all interested wavelengths is responsible for broadband light-trapping that induces prominent energy depositions in Pt layers. Electrical investigations show that, benefitting from suppressed hot-electron transport losses and increased hot-electron harvesting junctions, the predicted responsivity of the designed HE PD is up to 8.51 mA/W at 900 nm. Moreover, the high average absorption (responsivity) of 0.96 (3.66 mA/W) is substantially sustained over a broad incidence angle regardless of the polarizations of incident light. The comparison studies between five-layer and three-layer devices emphasize the superiority of five-layer design in strong optical absorption in Pt layers and efficient hot-electron extraction.

Observation of coupling interaction between surface plasmons and Tamm plasmons

The optical effect analogous to electromagnetically induced transparency (EIT) in atomic systems has attracted broad attention in the field of photonics due to its promising applications in optical storage and integrated devices. Herein, we firstly report the experimental observation of the EIT-like effect generated from the coupling between surface plasmons (SPs) and Tamm plasmons (TPs) in a hybrid multilayer system at the near-infrared band. This multilayer system is composed of a nanofabricated silver grating on a silver/Bragg mirror with a SiO2 spacer. The experimental results show that a narrow reflection peak can appear in the wide reflection spectral dip due to the coupling between the SPs in the silver grating and TPs in the silver/Bragg mirror, which agree well with the finite-difference time-domain (FDTD) simulations. It is also found that the dip position of the EIT-like spectrum presents a redshift with the increase of the silver grating width. These results will provide a new way, to the best of our knowledge, for the generation of the EIT-like effect and light spectral manipulation in multilayer structures.

Plasmon-Induced Hot Electrons in Nanostructured Materials: Generation, Collection, and Application to Photochemistry

Plasmon refers to the coherent oscillation of all conduction-band electrons in a nanostructure made of a metal or a heavily doped semiconductor. Upon excitation, the plasmon can decay through different channels, including nonradiative Landau damping for the generation of plasmon-induced energetic carriers, the so-called hot electrons and holes. The energetic carriers can be collected by transferring to a functional material situated next to the plasmonic component in a hybrid configuration to facilitate a range of photochemical processes for energy or chemical conversion. This article centers on the recent advancement in generating and utilizing plasmon-induced hot electrons in a rich variety of hybrid nanostructures. After a brief introduction to the fundamentals of hot-electron generation and decay in plasmonic nanocrystals, we extensively discuss how to collect the hot electrons with various types of functional materials. With a focus on plasmonic nanocrystals made of metals, we also briefly examine those based upon heavily doped semiconductors. Finally, we illustrate how site-selected growth can be leveraged for the rational fabrication of different types of hybrid nanostructures, with an emphasis on the parameters that can be experimentally controlled to tailor the properties for various applications.

Plasmonic Bound States in the Continuum Metasurface-Semiconductor-Metal Architecture Enables Efficient Hot-Electron-Based Photodetector

Plasmonic hot-electron-based photodetectors (HEB-PDs) have received widespread attention for their ability to realize effective carrier collection under sub-bandgap illumination. However, due to the low hot electron emission probability, most of the existing HEB-PDs exhibit poor responsivity, which significantly restricts their practical applications. Here, by employing the binary-pore anodic alumina oxide template technique, we proposed a compact plasmonic bound state in continuum metasurface-semiconductor-metal-based (BIC M-S-M) HEB-PD. The symmetry-protected BIC can manipulate a strong gap surface plasmon in the stacked M-S-M structure, which effectively enhances light-matter interactions and improves the photoresponse of the integrated device. Notably, the optimal M-S-M HEB-PD with near-unit absorption (∼90%) around 800 nm delivers a responsivity of 5.18 A/W and an IPCE of 824.23% under 780 nm normal incidence (1 V external bias). Moreover, the ultrathin feature of BIC M-S-M (∼150 nm) on the flexible substrate demonstrates excellent stability under a wide range of illumination angles from -40° to 40° and at the curvature surface from 0.05 to 0.13 mm-1. The proposed plasmonic BIC strategy is very promising for many other hot-electron-related fields, such as photocatalysis, biosensing, imaging, and so on.

Strong enhancement of third harmonic generation from a Tamm plasmon multilayer structure with WS2

Improving the conversion efficiency is particularly important for the generation and applications of harmonic waves in optical microstructures. Herein, we propose to enhance the efficiency of third harmonic generation by integrating a monolayer WS2 with the metal/dielectric/photonic crystal multilayer structure. The numerical simulations show that the multilayer structure enables to generate the Tamm plasmon mode between the metal film and photonic crystal around the telecommunication wavelength, which is consistent with the experimental result. By measuring with a self-built nonlinear optical micro-spectroscopy system, we find that the third harmonic signal can be reinforced by 16-fold through inserting the monolayer WS2 in the dielectric spacer. This work will provide a new way for improving nonlinear optical response, especially THG in multilayer photonic microstructures.

Tamm plasmon polariton-based planar hot-electron photodetector for the near-infrared region

Light-trapping devices have always been a topic of intense interest among researchers. One such device that has gained attention is the hot-electron photodetector with a tunable detection wavelength. Photodetectors based on plasmon nanostructures that provide excitation of surface plasmon polaritons are challenging to manufacture. To address this issue, a planar hot-electron photodetector based on a Tamm plasmon polariton localized in a metal-semiconductor-multilayer mirror structure has been proposed in this study. The parameters and materials of the structure were adjusted to ensure perfect absorption at the resonance wavelength. As a result, the photoresponsivity of the proposed device can reach 42.6 mA W-1 at 905 nm. For the first time, the photosensitivity was calculated analytically by solving the dispersion law for the Tamm plasmon polariton.

Grating-assisted hot-electron photodetectors for S- and C-band telecommunication

Although outstanding detectivities, InGaAs photodetectors for optic fiber communication are often costly due to the need for cooling. Therefore, cryogen-free and cost-effective alternatives working in telecommunication bands are highly desired. Here, we present a design of hot-electron photodetectors (HE PDs) with attributes of room-temperature operation and strong optical absorption over S and C bands (from 1460 to 1565 nm). The designed HE PD consists of a metal-semiconductor-metal hot-electron stack integrated with a front grating. Optical simulations reveal that mode hybridizations between Fabry-Pérot resonance and grating-induced surface plasmon excitation lead to high absorption efficiencies (≥0.9) covering S and C bands. Probability-based electrical calculations clarify that device responsivity is mainly determined by working wavelength on the premise of broadband strong absorption. Moreover, through comparison studies between the grating-assisted HE PD and purely planar microcavity system that serves as a reference, we highlight the design superiorities in average absorption and average responsivity with optimized values of 0.97 and 0.73 mA W-1, respectively. The upgraded peformances of the designed device are promising for efficient photoelectric conversion in optic fiber communication systems.

Multi-channel graphene-based perfect absorbers utilizing Tamm plasmon and Fabry-Perot resonances

In this paper, a multi-channel narrowband absorption structure utilizing the Tamm plasmon and Fabry-Perot resonances in the 1-2 THz range is presented. The structure consists of a graphene sheet, followed by a spacer layer and a dielectric-metal photonic crystal. The transfer matrix method (TMM) is employed to evaluate the effect of different parameters such as the constituent materials and thicknesses of the layers as well as the graphene chemical potential on the spectral response of the structure. Simulation results show that the number of channels, resonance frequencies, and absorption peaks can be easily adjusted by controlling the thicknesses and materials of the layers. The absorption value can reach as high as 99.23% for normal incidents. Additionally, perfect absorption of 100% is achievable by changing the angle of the incident light. Owing to high absorption and straightforward fabrication process, the proposed structure can find various applications such as filtering, sensing, optical switches, and thermal emissions.

Tunable Tamm plasmon cavity as a scalable biosensing platform for surface enhanced resonance Raman spectroscopy

Surface enhanced Resonance Raman spectroscopy (SERRS) is a powerful technique for enhancing Raman spectra by matching the laser excitation wavelength with the plasmonic resonance and the absorption peak of biomolecules. Here, we propose a tunable Tamm plasmon polariton (TPP) cavity based on a metal on distributed Bragg reflector (DBR) as a scalable sensing platform for SERRS. We develop a gold film-coated ultralow-loss phase change material (Sb2S3) based DBR, which exhibits continuously tunable TPP resonances in the optical wavelengths. We demonstrate SERRS by matching the TPP resonance with the absorption peak of the chromophore molecule at 785 nm wavelength. We use this platform to detect cardiac Troponin I protein (cTnI), a biomarker for early diagnosis of cardiovascular disease, achieving a detection limit of 380 fM. This scalable substrate shows great promise as a next-generation tunable biosensing platform for detecting disease biomarkers in body fluids for routine real-time clinical diagnosis.

Exploring the potential of broadband Tamm plasmon resonance for enhanced photodetection

Tamm plasmon polaritons (TPPs) have emerged as a promising platform for photodetector applications due to their strong light-matter interaction and potential for efficient light absorption. In this work, a design for a broadband photodetector (PD) based on the optical Tamm plasmon (OTS) state generated in a periodic metal-semiconductor-distributed Bragg reflector (DBR) geometry is proposed. The transfer matrix method (TMM) was used to study the propagation of electromagnetic waves through the proposed structure. By exciting the structure with incident light and analyzing the electric field profile within the multilayer structure at the resonant wavelength, we observe a distinctive electric field distribution that indicates the presence of Tamm plasmon modes. A comparative study was conducted to investigate the optical properties of a photodetector in the near-infrared (NIR) range by varying parameters such as thickness. By optimizing the thickness, we successfully achieved a broadband photoresponse in the photodetector, with a maximum responsivity of 21.8 mA/W at a wavelength of 1354 nm, which falls within the photonic bandgap region. FWHM was found to be 590 nm for the responsivity spectrum. The geometry also presents maximum absorption with FWHM calculated to be about 871.5 nm. The proposed geometry offers a broadband photoresponse, which is advantageous for the advancement of Tamm-based detector technologies. The ability to detect light over a wide operation range makes this mechanism highly beneficial for various applications.

Planar hot-electron photodetection with polarity-switchable photocurrents controlled by the working wavelength

Hot-electron photodetection is attracting increasing interests. Based on internal photoemission mechanism, hot-electron photodetectors (HE PDs) convert incident photon energy into measurable photocurrent. To obtain polarity-switchable photocurrent, one often applies electric bias to reverse the hot-electron flow. However, the employment of bias reduces the device flexibility and increasing the bias voltage degrades the detectivity of the device. Herein, we design a planar HE PD with the polarity-switchable photocurrent controlled by the working wavelength. Optical simulations show that the device exhibits two absorption peaks due to the resonances of two Tamm plasmons (TPs). Electrical calculations predict two corresponding TP-assisted responsivity peaks, but with opposite photocurrent polarities, which are determined by the hot-electron flows with opposite directions. We find that the hot-electron flows are closely related with the population differences of TP-induced hot electrons in two electrodes. We further demonstrate that the photocurrent polarity of the HE PD can be switched by altering working wavelength from one TP wavelength to the other. We believe that this approach paves a route to achieve flexible hot-electron photodetection for extensive applications.

Ultrabroadband hot-hole photodetector based on ultrathin gold film

Hot carriers injected into semiconductor enables below-bandgap photodetection, thus attracting increasing interest. The performance of hot carrier-based device is directly related to the absorptivity of metal. Several strategies such as surface plasmons, metamaterials, and optical cavities are utilized to enhance the weak intrinsic absorption of the metal. However, the detection range is limited by their narrow resonance bandwidth alternatively. Impedance-matched absorbers, whose sheet resistance is equal to half of the free-space impedance (188 Ω), can achieve a wavelength-independent absorptivity up to 50%. Herein, we theoretically design a purely planar hot-hole photodetector based on ultrathin gold film, a new type of metallic impedance-matched absorber. Benefiting both from the efficient absorption and ultrathin nature of the film, we predict that the photoresponsivity of our device can reach 35.7 mA W^-1 under zero bias at the wavelength of 1.3 μm, with a full width at half maximum (FWHM) of detection range reaching 1050 nm, setting a new record for the bandwidth of the hot carrier photodetectors. We also demonstrated that the device is robust to the incident angle and can be tuned through the external bias voltage. This work provides a pathway for broadband hot carrier detectors and other hot carrier-based applications.

Bias voltage-tuned hot-electron optical sensing with planar Au-MoS2-Au junction

Harvesting photoexcited hot electrons in metals promises a number of benefits in optical sensing. In practice, hot-electron optical sensors with tunable performance in electrical sensitivity are still absent. Herein, we propose a design to realize tunable hot-electron optical sensing. The proposed device consists of a one-dimensional grating deposited on a planar Au-MoS₂-Au junction that is used for efficient hot-electron harvesting. Photoelectric simulations show that when grating-assisted plasmonic resonance is excited, bias voltage between two Au layers can be used to manipulate the magnitude and polarity of responsivity at the working wavelength. Therefore, the change in responsivity that originates from the change in refractive index of analyte in which the device is immersed can also be tuned by applied voltage. It is found that when bias voltage is 1 V, the electrical sensitivity doubled compared with that when applied voltage is absent. We believe the bias voltage-tuned strategy that is applied to planar hot-electron harvesting junctions facilitates the development of optical sensing.

A broadband and polarization-independent metasurface perfect absorber for hot-electron photoconversion

We report an ultra-broadband metasurface perfect absorber from the UV to NIR region based on TiN nanostructures. A polarization-independent experimental average absorption of 0.900 (0.921 in simulation) at the wavelength band from 300 nm to 1500 nm is realized with only an 82 nm-thick TiN layer with TiO₂ and MgF₂ on top, which is efficiently fabricated by utilizing double-beam UV interference lithography followed by sputter coating deposition. A TiN-TiO₂ hot-electron photoelectric conversion system is also simulated. An IPCE of 4% is realized at the wavelength of 710 nm and the average IPCE is 2.86% in the wavelength range of 400 nm to 1500 nm. The demonstrated device suggests an efficient way of designing and fabricating broadband perfect absorbers, which has great application potential in efficient hot-electron optoelectronic and photocatalytic systems.

Plasmonic hot-electron reconfigurable photodetector based on phase-change material Sb2S3

Hot-carrier based photodetectors and enhanced by surface plasmons (SPs) hot-electron injection into semiconductors, are drawing significant attention. This photodetecting strategy yields to narrowband photoresponse while enabling photodetection at sub-bandgap energies of the semiconductor materials. In this work, we analyze the design of a reconfigurable photodetector based on a metal-semiconductor (MS) configuration with interdigitated dual-comb Au electrodes deposited on the semiconducting Sb₂S₃ phase-change material. The reconfigurability of the device relies on the changes of refractive index between the amorphous and crystalline phases of Sb₂S₃ that entail a modulation of the properties of the SPs generated at the dual-comb Au electrodes. An exhaustive numerical study has been realized on the Au grating parameters formed by the dual-comb electrodes, and on the SP order with the purpose of optimizing the absorption of the device, and thus, the responsivity of the photodetector. The optimized photodetector layout proposed here enables tunable narrowband photodetection from the O telecom band (λ = 1310 nm) to the C telecom band (λ = 1550 nm).

Five-layer planar hot-electron photodetectors at telecommunication wavelength of 1550 nm

Cost-effective and high-responsivity photodetectors at a telecommunication wavelength of 1550 nm are highly desired in optical communication systems. Differing from conventional semiconductor-based photodetectors, several planar hot-electron photodetectors (HE PDs) that operate at 1550 nm have been reported. However, these devices were often comprised of many planar layers and exhibited relatively low responsivities. Herein, we propose a design of high-performance planar HE PDs consisting of five layers. Utilizing Fabry-Pérot (FP) resonance, the nearly perfect absorption of the proposed device can be achieved at the targeted wavelength of 1550 nm. Simulation results show that FP resonance orders are crucial for the optical absorption efficiencies, and then electrical responses. Analytical electrical calculations reveal that, benefiting from the strong absorption (>0.6) in the ultrathin Au layer with a thickness of 5 nm and the low Schottky barrier (0.5 eV) of Au-MoS₂ contact, predicted responsivity of proposed HE PD at zero-order FP resonance is up to ∼10 mA/W. Our design provides a new approach to realize low-cost and efficient photodetection for optical communication technology.

Real-Time Visual Sensing of Heat or Mass Transfer Processes for Microfluids via Tamm Plasmon Polaritons

Heat or mass transfer processes of microfluids are very important in bioscience, environmental engineering, and food science, which are still hard to detect in real time. To overcome this difficulty, we try to use Tamm plasmon polaritons to enhance the interaction of light with microfluids. The main structure of the proposed configuration is Ag-photonic crystal (PhC) cavity, which can generate strong photonic localization by exciting Tamm plasmon polaritons. The results show that the enhancement of light intensity reaches ∼90 times in the cavity and the reflectance spectrum of the proposed structure exists in a narrow valley near 632.8 nm. This illustrates the generation of Tamm plasmon polaritons in the proposed structure. By injecting the microfluids into the cavity, the heat and mass transfer processes of the microfluids will have considerable influence on the reflectance of the proposed structure. Simulation results show that the concentration or temperature distributions of the microfluids can be effectively detected by analyzing the brightness of the imaging pictures, which is real-time and visible. Meanwhile, the sensitivity of the proposed configuration can be tuned by setting proper base parameters. This proposed configuration will have great potential in the study of microfluids, especially for the dynamic processes.

Selective Properties of Mid-Infrared Tamm Phonon-Polaritons Emitter with Silicon Carbide-Based Structures

Electromagnetic (EM) absorbers and emitters have attracted much interest because of their versatile applications. A photonic heterostructure composed of silicon carbide (SiC) layer/germanium (Ge) cavity/distributed Bragg reflector (DBR) has been proposed. Selective emission properties have been investigated through rigorous coupled wave analysis (RCWA) method. The results illustrate that Tamm phonon-polaritons can be excited, and the magnetic field is partially centralized at the junction of Ge cavity and SiC film, aimed to improve the interactions of photon-phonon. The absorptivity/emissivity of the structure can be better optimized by controlling the coupling of surface modes with the incident wave. Near-unity absorption can be achieved through optimizing the SiC grating/Ge cavity/distributed Bragg reflector (DBR) multilayer structure with geometrical parameters of d_s = 0.75 μm, d_g = 0.7 μm, d₁ = 1.25 μm and d₂ = 0.75 μm, respectively. Physical mechanism of selective emission characteristics is deliberated. In addition, the simulation results demonstrate that the emitter desensitizes to the incidence angle and polarization state in the mid-infrared (MIR) range. This research ameliorates the function of the selective emitters, which provides more efficient design for SiC-based systems.

Design and optimization of mid-infrared hot electron detector based on Al/GaAs fishnet nanostructure for CO2 sensing

Hot electron detectors (HEDs) based on plasmon resonance can circumvent a semiconductor's bandgap limitation and have high sensitivity, suitable for infrared gas detectors. Unfortunately, there are few literature reports on research in the mid-infrared (MIR) region. Herein, we design and optimize a HED based on Al/GaAs fishnet nanostructure for MIR CO₂ sensing, and its optical-electrical properties are numerically studied. Surface plasmons not only achieve strong absorptance at CO₂ emission wavelength but also greatly improve the photoelectric responsivity over a plane structure detector (∼42times). By changing the thickness of the GaAs layer, the detection wavelength can also be actively adjusted, achieving a larger range of multi-gas detection. The effect of external voltage is also considered. This work highlights a potential engineering application value and offers a path toward more compact and efficient MIR gas detectors.

Distributed Bragg Reflectors Employed in Sensors and Filters Based on Cavity-Mode Spectral-Domain Resonances

Spectral-domain resonances for cavities formed by two distributed Bragg reflectors (DBRs) were analyzed theoretically and experimentally. We model the reflectance and transmittance spectra of the cavity at the normal incidence of light when DBRs are represented by a one-dimensional photonic crystal (1DPhC) comprising six bilayers of TiO2/SiO2 with a termination layer of TiO2. Using a new approach based on the reference reflectance, we model the reflectance ratio as a function of both the cavity thickness and its refractive index (RI) and show that narrow dips within the 1DPhC band gap can easily be resolved. We revealed that the sensitivity and figure of merit (FOM) are as high as 610 nm/RIU and 938 RIU−1, respectively. The transmittance spectra include narrow peaks within the 1DPhC band gap and their amplitude and spacing depend on the cavity’s thickness. We experimentally demonstrated the sensitivity to variations of relative humidity (RH) of moist air and FOM as high as 0.156 nm/%RH and 0.047 %RH−1, respectively. In addition, we show that, due to the transmittance spectra, the DBRs with air cavity can be employed as spectral filters, and this is demonstrated for two LED sources for which their spectra are filtered at wavelengths 680 nm and 780 nm, respectively, to widths as narrow as 2.3 nm. The DBR-based resonators, thus, represent an effective alternative to both sensors and optical filters, with advantages including the normal incidence of light and narrow-spectral-width resonances.

Engineering Plasmonic Environments for 2D Materials and 2D-Based Photodetectors

Two-dimensional layered materials are considered ideal platforms to study novel small-scale optoelectronic devices due to their unique electronic structures and fantastic physical properties. However, it is urgent to further improve the light–matter interaction in these materials because their light absorption efficiency is limited by the atomically thin thickness. One of the promising approaches is to engineer the plasmonic environment around 2D materials for modulating light–matter interaction in 2D materials. This method greatly benefits from the advances in the development of nanofabrication and out-plane van der Waals interaction of 2D materials. In this paper, we review a series of recent works on 2D materials integrated with plasmonic environments, including the plasmonic-enhanced photoluminescence quantum yield, strong coupling between plasmons and excitons, nonlinear optics in plasmonic nanocavities, manipulation of chiral optical signals in hybrid nanostructures, and the improvement of the performance of optoelectronic devices based on composite systems.

Enhancing Hot-Electron Photodetection of a TiO2/Au Schottky Junction by Employing a Hybrid Plasmonic Nanostructure

Hot-electron photodetectors (HEPDs) are triggering a strong surge of interest in applications of image sensors and optics communication, since they can realize photoelectric responses when the incident photon energy is lower than the bandwidth of the semiconductor. In traditional HEPD systems, the metal layers are dressed with regular gratings, which can only excite plasmonic resonance over a narrow bandwidth, limiting the hot-electron photoelectric effect. To break this limitation, hybrid plasmonic nanostructures should be applied in HEPDs. Here, we propose a TiO2 based HEPD device incorporated with a hybrid plasmonic nanostructure, which consists of Au nanoparticles (Au NPs) and a conformal transparent Au film. With the assistance of the plasmonic resonances excited in this hybrid nanostructure, the spectrum of the photocurrent response is significantly broadened from the UV band to the visible and near-infrared (NIR) ranges. It is demonstrated that at the wavelengths of 660 nm and 850 nm, the photocurrent in the hybrid HEPD device is enhanced by 610% and 960%, respectively, compared with the counterparts without the addition of Au NPs. This work promotes the development of high performances HEPDs, offering an alternative strategy for realizing photodetection and image sensing in the NIR range.

Broadband Tamm Plasmons in Chirped Photonic Crystals for Light-Induced Water Splitting

An electrode of a light-induced cell for water splitting based on a broadband Tamm plasmon polariton localized at the interface between a thin TiN layer and a chirped photonic crystal has been developed. To facilitate the injection of hot electrons from the metal layer by decreasing the Schottky barrier, a thin n-Si film is embedded between the metal layer and multilayer mirror. The chipping of a multilayer mirror provides a large band gap and, as a result, leads to an increase in the integral absorption from 52 to 60 percent in the wavelength range from 700 to 1400 nm. It was shown that the photoresponsivity of the device is 32.1 mA/W, and solar to hydrogen efficiency is 3.95%.

Electrically Tunable and Dramatically Enhanced Valley-Polarized Emission of Monolayer WS2 at Room Temperature with Plasmonic Archimedes Spiral Nanostructures

Monolayer transition metal dichalcogenides (TMDs) have intrinsic valley degrees of freedom, making them appealing for exploiting valleytronic applications in information storage and processing. WS₂ monolayer possesses two inequivalent valleys in the Brillouin zone, each valley coupling selectively with a circular polarization of light. The degree of valley polarization (DVP) under the excitation of circularly polarized light (CPL) is a parameter that determines the purity of valley polarized photoluminescence (PL) of monolayer WS₂ . Here efficient tailoring of valley-polarized PL from monolayer WS₂ at room temperature (RT) through surface plasmon-exciton interactions with plasmonic Archimedes spiral (PAS) nanostructures is reported. The DVP of WS₂ at RT can be enhanced from <5% to 40% and 50% by using 2 turns (2T) and 4 turns (4T) of PAS, respectively. Further enhancement and control of excitonic valley polarization is demonstrated by electrostatically doping monolayer WS₂ . For CPL on WS₂ -2TPAS heterostructures, the 40% valley polarization is enhanced to 70% by modulating the carrier doping via a backgate, which may be attributed to the screening of momentum-dependent long-range electron-hole exchange interactions. The manifestation of electrically tunable valley-polarized emission from WS₂ -PAS heterostructures presents a new strategy toward harnessing valley excitons for application in ultrathin valleytronic devices.

Planar narrowband Tamm plasmon-based hot-electron photodetectors with double distributed Bragg reflectors

Hot-electron photodetectors (HE PDs) are attracting a great deal of attention from plasmonic community. Many efficient HE PDs with various plasmonic nanostructures have been demonstrated, but their preparations usually rely on complicated and costly fabrication techniques. Planar HE PDs are viewed as potential candidates of cost-effective and large-area applications, but they likely fail in the simultaneous achievement of outstanding optical absorption and hot-electron collection. To reconcile the contradiction between optical and electrical requirements, herein, we propose a planar HE PD based on optical Tamm plasmons (TPs) consisted of an ultrathin gold film (10 nm) sandwiched between two distributed Bragg reflectors (DBRs). Simulated results show that strong optical absorption (>0.95) in the ultrathin Au film is realized. Electrical calculations show that the predicted peak photo-responsivity of proposed HE PD with double DBRs is over two times larger than that of conventional single-DBR HE PD. Moreover, the planar dual-DBR HE PDs exhibit a narrowband photodetection functionality and sustained performance under oblique incidences. The optical nature associated with TP resonance is elaborated.

Simulated Study of High-Sensitivity Gas Sensor with a Metal-PhC Nanocavity via Tamm Plasmon Polaritons

An optical configuration was designed and simulated with a metal-photonic crystal (PhC) nanocavity, which had high sensitivity on gas detection. The simulated results shows that this configuration can generate a strong photonic localization through exciting Tamm plasmon polaritons. The strong photonic localization highly increases the sensitivity of gas detection. Furthermore, this configuration can be tuned to sense gases at different conditions through an adjustment of the detection light wavelength, the period number of photonic crystal and the thickness of the gas cavity. The sensing routes to pressure variations of air were revealed. The simulation results showed that the detection precision of the proposed device for gas pressure could reach 0.0004 atm.

Nanobowls-assisted broadband absorber for unbiased Si-based infrared photodetection

Hot electrons from the nonradiative decay of surface plasmons have drawn extensive attention due to the outstanding performance in realizing below-bandgap photodetection. However, the widely employed metallic nanostructures are normally complex and delicate with a great challenge in large-area fabrication, and there is a great limitation to achieve substantial photoresponse at relatively long wavelengths (e.g., 2000nm) with polarization- and incident-angle independence. In this study, we theoretically and experimentally demonstrate a broadband, omnidirectional, and polarization-insensitive absorber based on wafer-scale silicon honeycomb nanobowls with 20-nm-thick gold overlayer. The average absorption across the long wave near infrared band (LW-NIR, i.e., 1100-2500 nm) is higher than 82%, which is contributed from the random nature and multimode localized plasmonic resonances excited on the side walls of nanobowls. Benefitted from the well-connected thin Au film and relatively low Schottky barrier, the generated hot electrons have a high transport probability to reach Schottky interface and participate in the interfacial charge transfer process. As a result, the hot-electron photodetector under no bias realizes a broadband photodetection up to 2000nm wavelength with a responsivity of 0.145 mA/W, and its cutoff wavelength is predicted up to 3300 nm by fitting the experimental result with Fowler theory. Our proposed Au/Si nanobowls photodetector could open a pathway to further extend the detection wavelength of Si-based photodetectors with a large-area and low-cost fabrication process, which promotes practical hot-electron applications.

Sensing based on Bloch surface wave and self-referenced guided mode resonances employing a one-dimensional photonic crystal

Sensing abilities of a one-dimensional photonic crystal (1DPhC) represented by a multilayer dielectric structure are analyzed theoretically and experimentally, using a new wavelength interrogation interference method. The structure comprising a glass substrate and six bilayers of TiO₂/SiO₂ with a termination layer of TiO₂ is employed in both gas sensing based on the Bloch surface wave (BSW) resonance and liquid analyte sensing based on a self-referenced guide-mode resonance (GMR). We model the spectral interference reflectance responses in the Kretschmann configuration with a coupling prism made of BK7 glass and show that a sharp dip with maximum depth associated with the BSW excitation is red-shifted as the refractive index (RI) changes in a range of 1-1.005. Thus, a sensitivity of 1456 nm per RI unit (RIU) and figure of merit (FOM) of 91 RIU^-1 are reached. Similarly, we model the responses for aqueous solutions of ethanol to show that dips of maximum depth are associated with the GMRs, and the highest sensitivity and FOM reached are 751 nm/RIU and 25 RIU^-1, respectively. Moreover, we show that one of the dips is with the smallest shift as the RI changes, and hence it can be used as a reference. The theoretical results are confirmed by the experimental ones when the BSW resonance is used in sensing of humid air with a sensitivity of 0.027 nm/%relative humidity (RH) and FOM of 1.4×10^-3 %RH^-1. Similarly, the GMR is used in sensing of aqueous solutions of ethanol, and the highest sensitivity and FOM reached 682 nm/RIU and 23 RIU^-1, respectively. The reference dip is also resolved and this self-reference makes the measurement more accurate and repeatable, and less sensitive to optomechanical drifts.

Phase change material based hot electron photodetection

We introduce a phase change material (PCM) based metal-dielectric-metal (MDM) cavity of gold (Au)-antimony trisulfide (Sb2S3)-Au as a hot electron photodetector (HEPD). Sb2S3 shows significant contrast in the bandgap (Eg) upon phase transition from the crystalline (Cry) (Eg = 2.01 eV) to the amorphous (Amp) (Eg = 1.72 eV) phase and forms the lowest Schottky barrier with Au in its Amp phase compared to conventional semiconductors such as Si, MoS2, and TiO2. The proposed HEPD is tunable for absorption and responsivity in the spectral range of 720 nm < λ < 1250 nm for the Cry phase and 604 nm < λ < 3542 nm for the Amp phase. The single resonance cavity and thus the sensitivity of the designed HEPD device can be changed to the double resonance cavity via the Cry to Amp phase transition. The maximum predicted responsivities for the single and double cavities are 20 and 24 mA W-1, respectively, at 950 nm and 1050 nm wavelengths which is the highest among all previously proposed planar HEPD devices. An anti-symmetric resonance mode at a higher wavelength is observed in the double cavity with 100% absorption. Owing to a high index of Sb2S3, an ultrathin ∼40 nm (∼λ/15) MDM cavity supports a critical light coupling to achieve high-efficiency HEPDs. Furthermore, a reversible and ultrafast (∼70 ns) Cry to Amp phase transition of Sb2S3 makes it suitable for many tunable photonics applications ranging from the visible to near-infrared region. Finally, we have introduced a novel scheme to switch between the single and double cavity by exploiting a semiconductor to metal phase transition in a PCM called VO2. The integration of VO2 as a coupling medium in the double cavity has increased the responsivity up to 50% upon phase transition to the metal phase. The proposed design can be used in optical filters, optical switches, ultrathin broad or narrow band solar absorbers, and other energy applications such as water splitting.

Broadband Tamm plasmon-enhanced planar hot-electron photodetector

Here, we propose a planar hot-electron photodetector based on broadband Tamm plasmon resonance using a TiN layer, n-type doped Si layer, and seven pairs of DBRs. Simulation results show high absorption (94.2%) with a full width at half maximum of 239.3 nm, which is 2.9 times that of the Au/DBR configuration. We predict that the photoresponsivity can reach 26.1 mA W^-1 at 1140 nm. Since the planar nanofilms for TP resonance are facile to fabricate, this work promotes hot-electron applications in broadband photodetection and other broadband light-harvesting applications.

Ultranarrow-bandwidth planar hot electron photodetector based on coupled dual Tamm plasmons

Hot electron photodetectors based on a planar structure of metal-insulator /semiconductor-metal (MIM/MSM) have attracted much attention due to the easy and cheap fabrication process and the possibility of detecting light with energy lower than the semiconductor band gap. For this type of device, however, hot electron photocurrent is restricted by the trade-off between the light absorption and the internal quantum efficiency (IQE) since high absorption usually occurs within thick metals and the IQE in this case is usually low. The trade-off is circumvented in this paper by proposing a new type of hot electron photodetector based on planar MIM structure and coupled dual Tamm plasmons (TPs), which has a structure of one-dimensional photonic crystals (1DPCs)/Au/TiO₂/Au/1DPCs. The coupled modes of the dual TPs at the two 1DPCs/Au interfaces can lead to a high absorption of 98% in a 5 nm-thick Au layer. As a result, the responsivity of the conventional device with two Schottky junctions in series configuration reaches a high value of 9.78 mA/W at the wavelength of 800 nm. To further improve the device performance, devices with four Schottky junctions in parallel configuration are proposed to circumvent the hot electrons loss at the interface of the Au layer and the first TiO₂ layer of the 1DPCs. Correspondingly, the hot electrons photocurrent doubles and reaches a higher value of 21.87 mA/W. Moreover, the bandwidth of the responsivity is less than 0.4 nm, the narrowest one when compared with that for the hot electron photodetectors reported so far in the published papers.

Bloch Surface Wave Resonance Based Sensors as an Alternative to Surface Plasmon Resonance Sensors

We report on a highly sensitive measurement of the relative humidity (RH) of moist air using both the surface plasmon resonance (SPR) and Bloch surface wave resonance (BSWR). Both resonances are resolved in the Kretschmann configuration when the wavelength interrogation method is utilized. The SPR is revealed for a multilayer plasmonic structure of SF10/Cr/Au, while the BSWR is resolved for a multilayer dielectric structure (MDS) comprising four bilayers of TiO2/SiO2 with a rough termination layer of TiO2. The SPR effect is manifested by a dip in the reflectance of a p-polarized wave, and a shift of the dip with the change in the RH, or equivalently with the change in the refractive index of moist air is revealed, giving a sensitivity in a range of 0.042-0.072 nm/%RH. The BSWR effect is manifested by a dip in the reflectance of the spectral interference of s- and p-polarized waves, which represents an effective approach in resolving the resonance with maximum depth. For the MDS under study, the BSWRs were resolved within two band gaps, and for moist air we obtained sensitivities of 0.021-0.038 nm/%RH and 0.046-0.065 nm/%RH, respectively. We also revealed that the SPR based RH measurement is with the figure of merit (FOM) up to 4.7 × 10-4 %RH-1, while BSWR based measurements have FOMs as high as 3.0 × 10-3 %RH-1 and 1.1 × 10-3 %RH-1, respectively. The obtained spectral interferometry based results demonstrate that the BSWR based sensor employing the available MDS has a similar sensitivity as the SPR based sensor, but outperforms it in the FOM. BSW based sensors employing dielectrics thus represent an effective alternative with a number of advantages, including better mechanical and chemical stability than metal films used in SPR sensing.

Numerical Study of Multilayer Planar Film Structures for Ideal Absorption in the Entire Solar Spectrum

Here, we have theoretically proposed an ideal structure of selective solar absorber with multilayer planar films, which can absorb the incident light throughout the entire solar spectrum (300–2500 nm) and over a wide angular range, whatever the polarization angle of 0°~90°. The efficiency of the proposed absorber is proven by the Finite-Difference Time Domain (FDTD) simulation. The average absorption rate over the solar spectrum is up to 96.6%. The planar design is extremely easy to fabricate and modify, and this structure does not require lithographic processes to finish the absorbers. Improvements of the solar absorber on the basis of planar multilayer-film structures is attributed to multiple asymmetric highly lossy Fabry–Perot resonators. Because of having many virtues, such as using different refractory and non-noble metals, having angle and polarization independence, and having ideal absorption for entire solar spectrum, our proposed absorbers are promising candidates for practical industrial production of the solar-energy harvesting.

Planar hot-electron photodetector utilizing high refractive index MoS2 in Fabry-Pérot perfect absorber

Hot electron photodetection (HEPD) excited by surface plasmon can circumvent bandgap limitations, opening pathways for additional energy harvesting. However, the costly and time-consuming lithography has long been a barrier for large-area and mass production of HEPD. In this paper, we proposed a planar and electron beam lithography-free hot electron photodetector based on the Fabry-Pérot (F-P) resonance composed of Au/MoS2/Au cavity. The hot electron photodetector has a nanoscale thickness, high spectral tunability, and multicolour photoresponse in the near-infrared region due to the increased round-trip phase shift by using high refractive index MoS2. We predict that the photoresponsivity can achieve up to 23.6 mA W-1 when double cavities are integrated with the F-P cavity. The proposed hot electron photodetector that has a nanoscale thickness and planar stacking is a perfect candidate for large-area and mass production of HEPD.

Tunable infrared hot-electron photodetection by exciting gap-mode plasmons with wafer-scale gold nanohole arrays

Due to the strongly concentrated electromagnetic field and the ability to detect the below-bandgap photon energies, surface-plasmon-based photodetections have attracted considerable attention. However, the manipulation of plasmonic resonance is complicated with a high cost in fabrication; moreover, the performance of hot-electron photodetectors is generally unsatisfactorily low. Here, we demonstrated that a tunable absorption can be realized by using the nanohole patterned metal-spacer-metal (MSM) structure, which can be wafer-scale fabricated by the nanosphere lithography technology. The angle- and polarization-insensitive absorption is realized under the excitation of the gap-mode plasmons, which can be facilely manipulated in the near-infrared band by varying the thicknesses and material of the spacer as well as the diameter and period of the nanohole arrays. An asymmetrically bended electrical system is proposed to efficiently convert the highly absorbed photon energies into the photocurrent. Results show that the responsivity of the prepared MSM structure can be up to ∼2.82 mA/W at the wavelength of 1150 nm.

Planar, narrowband, and tunable photodetection in the near-infrared with Au/TiO2 nanodiodes based on Tamm plasmons

There is increasing interest in hot-electron photodetection due to the extended photoresponse well below the semiconductor band edge. However, the photoresponsivity is extremely low and the metallic nanostructures used to excite surface plasmons (SPs) for improved quantum yield are too complex for practical applications. Here, we show that by exciting Tamm plasmons (TPs), a planar device consisting of a thin metal film of 30 nm on a distributed Bragg reflector (DBR) can absorb ∼93% of the incident light, resulting in a high hot-electron generation that is over 34-fold enhanced compared to that of the reference without the DBR. Besides, the electric field increases with the light penetration depth in the metal, leading to hot-electron generation that is strongly concentrated near the Schottky interface. As a result, the photoresponsivity can be over 30 (6) times larger than that of the reference (conventional grating system). Moreover, the planar device exhibits an easily tunable working wavelength from the visible to the near-infrared, sustained performance under oblique incidences, and a multiband photodetection functionality. The proposed strategy avoids the complicated fabrication of the metallic nanostructures, facilitating the compact, large-area, and low-cost photodetection, biosensing, and photocatalysis applications.

Hot-electron photodetector with wavelength selectivity in near-infrared via Tamm plasmon

Tamm plasmonic (TP) structures, consisting of a metallic film and a distributed Bragg reflector (DBR), can exhibit pronounced light confinement allowing for enhanced absorption in the metallic film at the wavelength of the TP resonance. This wavelength dependent absorption can be converted into an electrical signal through the internal photoemission of energetic hot-electrons from the metallic film. Here, by replacing the metallic film at the top of a TP structure with a hot-electron device in a metal-semiconductor-ITO (M-S-ITO) configuration, for the first time, we experimentally demonstrate a wavelength-selective photoresponse around the telecommunication wavelength of 1550 nm. The M-S-ITO junction is deliberately designed to have a low energy barrier and asymmetrical hot-electron generation, in order to guarantee a measurable net photocurrent even for sub-bandgap incident light with a photon energy of 0.8 eV (1550 nm). Due to the excitation of TPs between the metallic film in the M-S-ITO structure and the underlying DBR, the fabricated TP coupled hot-electron photodetector exhibits a sharp reflectance dip with a bandwidth of 43 nm at a wavelength of 1581 nm. The photoresponse matches the absorptance spectrum, with a maximum value of 8.26 nA mW-1 at the absorptance peak wavelength that decreases by more than 80% when the illumination wavelength is varied by only 52 nm (from 1581 to 1529 nm), thus realizing a high modulation wavelength-selective photodetector. This study demonstrates a high-performance, lithography-free, and wavelength-selective hot-electron near-infrared photodetector using an M-S-ITO-DBR planar structure.

Truncated titanium/semiconductor cones for wide-band solar absorbers

A truncated Ti and Si cones metasurface has been proposed for wide-band solar absorber (WSA), which produced a high average absorption of 94.7% in the spectral region from 500 to 4000 nm. A maximal enhancement factor of 166.0% was achieved by the WSA in comparison with the absorption of Ti/Si cylinder resonators based absorber. Under the standard solar radiance, a high full-spectrum solar absorption efficiency of 96.1% was obtained for the WSA in the energy range from 0.28 to 4.0 eV. The spectral bandwidth with absorption above 90% is up to 3.402 μm, which shows an enhancement factor of 165.0% than that of the WSA intercalated by the SiO₂. Other semiconductors such as Ge, GaAs have been utilized to form the WSA, which also maintained the near-unity absorption in the wide-band spectrum. The plasmonic resonant response of the Ti material and the strong electromagnetic coupling capability of the Si resonator, and the plasmonic near-field coupling by the adjacent truncated cones were the main contributions for the impressive absorption behaviors. These findings pave a new way for achieving full-spectrum solar absorber via combining the Ti material and semiconductors, which could open potential approaches for active optoelectronic devices such as photo-detectors, hot-electron related modulators, and solar cells, etc.

Photodetection by Hot Electrons or Hot Holes: A Comparable Study on Physics and Performances

Hot-carrier photodetectors are drawing significant attention; nevertheless, current researches focus mostly on the hot-electron devices, which normally show low quantum efficiencies. In contrast, hot-hole photodetectors usually have lower barriers and can provide a wide spectral range of photodetection and an improved photoconversion efficiency. Here, we report a comparable study of the hot-electron and hot-hole photodetectors from both underlying physics and optoelectronic performance perspectives. Taking the typical Au/Si Schottky contact as an example, we find obvious differences in the energy band diagram and the sequent hot-carrier generation/transport/emission processes, leading to very distinguished photodetection performances. Compared with hot electrons, hot holes show higher density below the Fermi level, the longer mean free path arising under the lower electron-electron and electron-phonon scatterings, a lower barrier height, and a lighter effective mass in Si, all of which lead to larger number of high-energy hot holes, larger transport probability, higher emission efficiency, and higher photoresponsivity. However, the low barrier height can cause poor performances of hot-hole device in dark current density and detectivity. The study elucidates the intrinsic physical differences and compares the key performance parameters of the hot-hole and hot-electron photodetections, with the objective of providing complete information for designing hot-carrier devices.

Polaritonic manipulation based on the spin-selective optical Stark effect in the WS2 and Tamm plasmon hybrid structure

Exciton-polaritons have shown great potential as a low-energy consumption and robust solid-state platform for photoelectronics integration and quantum information applications. Here, an all-optical method that uses the spin-sensitive optical Stark effect is proposed to manipulate exciton-polaritons for functional polaritonic operations. We use a Tamm plasmon and WS2 hybrid structure with a patterned transverse potential to form the channeled bright state of polaritons. An optical Stark pulse causes perturbation of the polaritonic potential, so as to control the tunneling of polaritons between isolated channels. Polaritonic operations such as switching, splitting and routing were proposed through properly setting of the optical Stark pulse (e.g., pulse width). In addition, spin-sensitive manipulation of the polaritons was proposed taking advantage of the valley-selective excitonic energy shifting induced by the polarized optical Stark pulse. These basic operations together with time-space programming of the optical Stark pulses would pave a way of routing and addressing of polaritons for future optoelectronic integration and networking.

Synthesis of naked plasmonic/magnetic Au/Fe3O4 nanostructures by plasmon-driven anti-replacement reaction

In this study, naked Au(core)/Fe₃O₄(shell) hybrid nanostructures are rapidly synthesized by a plasmon-driven anti-replacement reaction. The Au nanoparticles are prepared by pulsed laser ablation in water. The mixture of Au nanoparticles and FeCl₃ solution is irradiated under a laser with a specific wavelength. The Fe³⁺ ions are reduced to low valence species by the 'hot electrons' in Au, and form the Fe₃O₄ spindles on the surface of Au nanoparticles. The Au nanoparticles are synchronously oxidized to Au⁺ and Au³⁺ ions by the 'hot holes'. The saturation magnetization and coercivity of Fe₃O₄ spindles are 48.7 emu g^-1 and 218.9 Oe, respectively. Our work provides a facile route to obtain the naked Au/Fe₃O₄ plasmonic/magnetic nanostructures.

Silicon-Based Embedded Trenches of Active Antennas for High-Responsivity Omnidirectional Photodetection at Telecommunication Wavelengths

Although the use of plasmonic nanostructures for photodetection below the band gap energy of the semiconductor has been intensively investigated recently, efficiencies of such hot electron-based devices have, unfortunately, remained low because of the inevitable energy loss of the hot electrons as they move and transfer in active antennas based on metallic nanostructures. In this work, we demonstrate the concept of high-refractive-index material-embedded trench-like (ETL) active antennas that could be used to achieve almost 100% absorbance within the ultrashallow region (approximately 10 nm) beneath the metal-semiconductor interface, which is a much smaller distance compared with the hot electrons' mean free path in the noble metal layer. Taking advantage of these ETL-based active antennas, we obtained photoresponsivities under zero bias at wavelengths of 1310 and 1550 nm of 5854 and 693 nA mW^-1, respectively-values higher than most those previously reported for active antenna-based silicon (Si) photodetectors that operate at optical telecommunication wavelengths. Furthermore, the ETL antenna strategy allowed us to preserve an omnidirectional and broadband photoresponse, with a superior degree of detection linearity of R² = 0.98889 under the light of low power density (down to 11.1 μW cm^-2). The photoresponses of the ETL antenna-based device varied by less than 10% upon changing the incident angle from normal incidence to 60°. Because these ETL-based devices provide high responsivity and omnidirectional detection over a broad bandwidth, they show promising potentials for use in hot electron-based optoelectronics for many applications (e.g., Si photonics, energy harvesting, photocatalysis, and sensing devices).

Planar dual-cavity hot-electron photodetectors

Hot-electron photodetectors (HE PDs) are attracting increasing interests. However, the nanostructured HE PDs are fabricated via complicated and costly techniques, while the planar counterparts can hardly achieve outstanding photon absorption and hot-electron collection simultaneously. To address the incompatibility in optical and electrical domains, herein, we propose an HE PD based on planar dual cavities (i.e., DC-HE PD) one each for photon absorption and triple Schottky junctions for carrier collection. Optoelectronic simulation demonstrates that the resonant wavelength and the absorption efficiency of the device can be manipulated conveniently by tailoring the planar thickness. Compared with the single-cavity system, the absorption efficiency of the DC-HE PD with the multi-junction configuration doubled (∼100%) and the responsivity tripled (∼2 mA W-1). The high-performance optoelectronic responses are shown to be sustained over a wide range of incident angles. The detailed physical property, namely, the coupled-cavity nature and the detailed analysis of the hot electron dynamics are presented.

Angle-insensitive narrowband optical absorption based on high-Q localized resonance

Strong optical absorption can be achieved easily based on an array of subwavelength localized resonators. The absorption bandwidth is typically wide since subwavelength metallic resonators are limited by a low quality factor (Q) due to their large material loss and so do dielectric counterparts owing to their weak photon binding. Here, an angle-insensitive narrowband optical absorber is suggested, which consists of subwavelength dielectric cavities buried inside a metal. Within each cavity, a special resonant mode of high Q can be supported, which is absorbed slowly by the metal walls as the electric field is concentrated at the cavity center and leaks slowly into the free space due to the blocking of the top metal film covering the cavities. Such a mode is excited to trap the incident wave in the optical absorption. When low-loss silver is used, one can obtain ultra-narrowband absorption with Q up to 487. At lower optical frequencies, the metal film needs to be punctured so that the incident wave can couple into the cavities effectively. The suggested absorption method may find its promising prospect in thermal radiation, photonic detection, optical sensing, and so on.

Polarization-insensitive hot-electron infrared photodetection by double Schottky junction and multilayer grating

Infrared photodetection based on hot electrons is drawing increasing interest due to the capabilities of below-bandgap detection, high tunability of working wavelength, compact size, and room-temperature operation. However, conventional hot-electron photodetectors are mostly based on surface plasmons with a strong polarization preference. In this Letter, we propose a multilayer grating double-junction hot-electron photodetector by introducing an ultrathin Au layer sandwiched between two Au-Si-Au cavities. The multilayer grating system allows the excitation of the guided-mode resonance that shows a weak reliance on the incident polarization and, therefore, realizes the polarization-insensitive optical absorption up to 98%. The special multilayer design facilitates hot-electron generation in the ultrathin Au layers with high carrier transport efficiency, as well as enabling the formation of a double Schottky junction, which doubles the carrier emission probability. The optical and electrical benefits ensure a polarization-independent photoresponsivity ∼1  mA/W at the wavelength of 1470 nm.

Circular Dichroism Control of Tungsten Diselenide (WSe2) Atomic Layers with Plasmonic Metamolecules

Controlling circularly polarized (CP) states of light is critical to the development of functional devices for key and emerging applications such as display technology and quantum communication, and the compact circular polarization-tunable photon source is one critical element to realize the applications in the chip-scale integrated system. The atomic layers of transition metal dichalcogenides (TMDCs) exhibit intrinsic CP emissions and are potential chiroptical materials for ultrathin CP photon sources. In this work, we demonstrated CP photon sources of TMDCs with device thicknesses approximately 50 nm. CP photoluminescence from the atomic layers of tungsten diselenide (WSe₂) was precisely controlled with chiral metamolecules (MMs), and the optical chirality of WSe₂ was enhanced more than 4 times by integrating with the MMs. Both the enhanced and reversed circular dichroisms had been achieved. Through integrations of the novel gain material and plasmonic structure which are both low-dimensional, a compact device capable of efficiently manipulating emissions of CP photon was realized. These ultrathin devices are suitable for important applications such as the optical information technology and chip-scale biosensing.

Simple Unbiased Hot-Electron Polarization-Sensitive Near-Infrared Photodetector

Plasmonic nanostructures can generate energetic "hot" electrons from light in a broad band fashion depending on their shape, size, and arrangement. Such structures have a promising use in photodetectors, allowing high speed, broad band, and multicolor photodetection. Because they function without a band gap absorption, photon detection at any energy would be possible through engineering of the plasmonic nanostructure. Herein, a compact hot-electron-based photodetector that combines polarization sensitivity and circularly polarized light detection in the near-infrared region was fabricated using an indium tin oxide (ITO)-Au hybrid layer. Furthermore, the sensitivity of the device was significantly increased by adding a poled Azo molecular glass film in a capacitor configuration. The resulting device is capable of detecting light below the ITO band gap at ambient temperature without any bias voltage. This photodetector, which is amenable to large-area fabrication, can be integrated with other nanophotonic and nanoplasmonic structures for operation at telecom wavelengths.