1
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Islam MS, Chowdhury RK, Barthelemy M, Moczko L, Hebraud P, Berciaud S, Barsella A, Fras F. Large-Scale Statistical Analysis of Defect Emission in hBN: Revealing Spectral Families and Influence of Flake Morphology. ACS NANO 2024. [PMID: 39083640 DOI: 10.1021/acsnano.3c10403] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/02/2024]
Abstract
Quantum emitters in two-dimensional layered hexagonal boron nitride are quickly emerging as a highly promising platform for next-generation quantum technologies. However, the precise identification and control of defects are key parameters to achieve the next step in their development. We conducted a comprehensive study by analyzing over 10,000 photoluminescence emission lines from liquid exfoliated hBN nanoflake samples, revealing 11 narrow sets of defect families within the 1.6 to 2.2 eV energy range. This challenges hypotheses of a random energy distribution. We also reported averaged defect parameters, including emission line widths, spatial density, phonon side bands, and Franck-Condon-related factors. These findings provide valuable insights into deciphering the microscopic origin of emitters in hBN hosts. We also explored the influence of the hBN host morphology on defect family formation, demonstrating its crucial impact. By tuning the flake size and arrangement, we achieve selective control of defect types while maintaining high spatial density. This offers a scalable approach to defect emission control, diverging from costly engineering methods. It emphasizes the significance of the morphological aspects of hBN hosts for gaining insights into defect origins and expanding their spectral control.
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Affiliation(s)
- Md Samiul Islam
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS, UMR 7504, F-67000 Strasbourg, France
| | - Rup Kumar Chowdhury
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS, UMR 7504, F-67000 Strasbourg, France
| | - Marie Barthelemy
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS, UMR 7504, F-67000 Strasbourg, France
| | - Loic Moczko
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS, UMR 7504, F-67000 Strasbourg, France
| | - Pascal Hebraud
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS, UMR 7504, F-67000 Strasbourg, France
| | - Stephane Berciaud
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS, UMR 7504, F-67000 Strasbourg, France
| | - Alberto Barsella
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS, UMR 7504, F-67000 Strasbourg, France
| | - Francois Fras
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS, UMR 7504, F-67000 Strasbourg, France
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2
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Zhong D, Gao S, Saccone M, Greer JR, Bernardi M, Nadj-Perge S, Faraon A. Carbon-Related Quantum Emitter in Hexagonal Boron Nitride with Homogeneous Energy and 3-Fold Polarization. NANO LETTERS 2024; 24:1106-1113. [PMID: 38240528 PMCID: PMC10835729 DOI: 10.1021/acs.nanolett.3c03628] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/01/2024]
Abstract
Most hexagonal boron nitride (hBN) single-photon emitters (SPEs) studied to date suffer from variable emission energy and unpredictable polarization, two crucial obstacles to their application in quantum technologies. Here, we report an SPE in hBN with an energy of 2.2444 ± 0.0013 eV created via carbon implantation that exhibits a small inhomogeneity of the emission energy. Polarization-resolved measurements reveal aligned absorption and emission dipole orientations with a 3-fold distribution, which follows the crystal symmetry. Photoluminescence excitation (PLE) spectroscopy results show the predictability of polarization is associated with a reproducible PLE band, in contrast with the non-reproducible bands found in previous hBN SPE species. Photon correlation measurements are consistent with a three-level model with weak coupling to a shelving state. Our ab initio excited-state calculations shed light on the atomic origin of this SPE defect, which consists of a pair of substitutional carbon atoms located at boron and nitrogen sites separated by a hexagonal unit cell.
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Affiliation(s)
- Ding Zhong
- Thomas J. Watson, Sr., Laboratory of Applied Physics, California Institute of Technology, Pasadena, California 91125, United States
- Kavli Nanoscience Institute, California Institute of Technology, Pasadena, California 91125, United States
- Institute for Quantum Information and Matter, California Institute of Technology, Pasadena, California 91125, United States
| | - Shiyuan Gao
- Department of Applied Physics and Material Science, California Institute of Technology, Pasadena, California 91125, United States
| | - Max Saccone
- Division of Chemistry and Chemical Engineering, California Institute of Technology, Pasadena, California 91125, United States
| | - Julia R Greer
- Division of Engineering and Applied Science, California Institute of Technology, Pasadena, California 91125, United States
| | - Marco Bernardi
- Department of Applied Physics and Material Science, California Institute of Technology, Pasadena, California 91125, United States
| | - Stevan Nadj-Perge
- Thomas J. Watson, Sr., Laboratory of Applied Physics, California Institute of Technology, Pasadena, California 91125, United States
- Institute for Quantum Information and Matter, California Institute of Technology, Pasadena, California 91125, United States
| | - Andrei Faraon
- Thomas J. Watson, Sr., Laboratory of Applied Physics, California Institute of Technology, Pasadena, California 91125, United States
- Kavli Nanoscience Institute, California Institute of Technology, Pasadena, California 91125, United States
- Institute for Quantum Information and Matter, California Institute of Technology, Pasadena, California 91125, United States
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3
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Smit R, Tebyani A, Hameury J, van der Molen SJ, Orrit M. Sharp zero-phonon lines of single organic molecules on a hexagonal boron-nitride surface. Nat Commun 2023; 14:7960. [PMID: 38042826 PMCID: PMC10693553 DOI: 10.1038/s41467-023-42865-4] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/24/2023] [Accepted: 10/20/2023] [Indexed: 12/04/2023] Open
Abstract
Single fluorescent molecules embedded in the bulk of host crystals have proven to be sensitive probes of the dynamics in their nano environment, thanks to their narrow (about 30-50 MHz or 0.1-0.2 μeV) optical linewidth of the 0-0 zero-phonon line (0-0 ZPL) at cryogenic temperatures. However, the optical linewidths of the 0-0 ZPL have been found to increase dramatically as the single molecules are located closer to a surface or interface, while no 0-0 ZPL has been detected for single molecules on any surface. Here we study single terrylene molecules adsorbed on the surface of hexagonal boron-nitride (hBN) substrates. Our low-temperature results show that it is possible to observe the 0-0 ZPL of fluorescent molecules on a surface. We compare our results for molecules deposited on the surfaces of annealed and non-annealed hBN flakes and we see a marked improvement in the spectral stability of the emitters after annealing.
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Affiliation(s)
- Robert Smit
- Huygens-Kamerlingh Onnes Laboratory, LION, Postbus 9504, 2300 RA, Leiden, The Netherlands
| | - Arash Tebyani
- Huygens-Kamerlingh Onnes Laboratory, LION, Postbus 9504, 2300 RA, Leiden, The Netherlands
| | - Jil Hameury
- Huygens-Kamerlingh Onnes Laboratory, LION, Postbus 9504, 2300 RA, Leiden, The Netherlands
| | | | - Michel Orrit
- Huygens-Kamerlingh Onnes Laboratory, LION, Postbus 9504, 2300 RA, Leiden, The Netherlands.
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4
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Fischer M, Sajid A, Iles-Smith J, Hötger A, Miakota DI, Svendsen MK, Kastl C, Canulescu S, Xiao S, Wubs M, Thygesen KS, Holleitner AW, Stenger N. Combining experiments on luminescent centres in hexagonal boron nitride with the polaron model and ab initio methods towards the identification of their microscopic origin. NANOSCALE 2023; 15:14215-14226. [PMID: 37594441 PMCID: PMC10472209 DOI: 10.1039/d3nr01511d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/31/2023] [Accepted: 07/21/2023] [Indexed: 08/19/2023]
Abstract
The two-dimensional material hexagonal boron nitride (hBN) hosts luminescent centres with emission energies of ∼2 eV which exhibit pronounced phonon sidebands. We investigate the microscopic origin of these luminescent centres by combining ab initio calculations with non-perturbative open quantum system theory to study the emission and absorption properties of 26 defect transitions. Comparing the calculated line shapes with experiments we narrow down the microscopic origin to three carbon-based defects: C2CB, C2CN, and VNCB. The theoretical method developed enables us to calculate so-called photoluminescence excitation (PLE) maps, which show excellent agreement with our experiments. The latter resolves higher-order phonon transitions, thereby confirming both the vibronic structure of the optical transition and the phonon-assisted excitation mechanism with a phonon energy ∼170 meV. We believe that the presented experiments and polaron-based method accurately describe luminescent centres in hBN and will help to identify their microscopic origin.
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Affiliation(s)
- Moritz Fischer
- Department of Electrical and Photonics Engineering, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark.
- Centre for Nanostructured Graphene, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
- NanoPhoton - Center for Nanophotonics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - Ali Sajid
- Centre for Nanostructured Graphene, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
- Department of Physics, Technical University of Denmark, 2800 Kgs. Lynby, Denmark
- School of Physics and Astronomy, Monash University, Victoria 3800, Australia
| | - Jake Iles-Smith
- Department of Electrical and Electronic Engineering, The University of Manchester, Sackville Street Building, Manchester M1 3BB, UK
| | - Alexander Hötger
- Walter Schottky Institute and Physics Department, Technical University of Munich, 85748 Garching, Germany
| | - Denys I Miakota
- Department of Electrical and Photonics Engineering, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark.
| | - Mark K Svendsen
- Department of Physics, Technical University of Denmark, 2800 Kgs. Lynby, Denmark
| | - Christoph Kastl
- Walter Schottky Institute and Physics Department, Technical University of Munich, 85748 Garching, Germany
| | - Stela Canulescu
- Department of Electrical and Photonics Engineering, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark.
| | - Sanshui Xiao
- Department of Electrical and Photonics Engineering, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark.
- Centre for Nanostructured Graphene, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
- NanoPhoton - Center for Nanophotonics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - Martijn Wubs
- Department of Electrical and Photonics Engineering, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark.
- Centre for Nanostructured Graphene, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
- NanoPhoton - Center for Nanophotonics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - Kristian S Thygesen
- Centre for Nanostructured Graphene, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
- Department of Physics, Technical University of Denmark, 2800 Kgs. Lynby, Denmark
| | - Alexander W Holleitner
- Walter Schottky Institute and Physics Department, Technical University of Munich, 85748 Garching, Germany
| | - Nicolas Stenger
- Department of Electrical and Photonics Engineering, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark.
- Centre for Nanostructured Graphene, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
- NanoPhoton - Center for Nanophotonics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
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5
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Kim SH, Park KH, Lee YG, Kang SJ, Park Y, Kim YD. Color Centers in Hexagonal Boron Nitride. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2344. [PMID: 37630929 PMCID: PMC10458833 DOI: 10.3390/nano13162344] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/14/2023] [Revised: 08/10/2023] [Accepted: 08/13/2023] [Indexed: 08/27/2023]
Abstract
Atomically thin two-dimensional (2D) hexagonal boron nitride (hBN) has emerged as an essential material for the encapsulation layer in van der Waals heterostructures and efficient deep ultraviolet optoelectronics. This is primarily due to its remarkable physical properties and ultrawide bandgap (close to 6 eV, and even larger in some cases) properties. Color centers in hBN refer to intrinsic vacancies and extrinsic impurities within the 2D crystal lattice, which result in distinct optical properties in the ultraviolet (UV) to near-infrared (IR) range. Furthermore, each color center in hBN exhibits a unique emission spectrum and possesses various spin properties. These characteristics open up possibilities for the development of next-generation optoelectronics and quantum information applications, including room-temperature single-photon sources and quantum sensors. Here, we provide a comprehensive overview of the atomic configuration, optical and quantum properties, and different techniques employed for the formation of color centers in hBN. A deep understanding of color centers in hBN allows for advances in the development of next-generation UV optoelectronic applications, solid-state quantum technologies, and nanophotonics by harnessing the exceptional capabilities offered by hBN color centers.
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Affiliation(s)
- Suk Hyun Kim
- Department of Physics, Kyung Hee University, Seoul 02447, Republic of Korea; (S.H.K.)
- Department of Information Display, Kyung Hee University, Seoul 02447, Republic of Korea
| | - Kyeong Ho Park
- Department of Physics, Kyung Hee University, Seoul 02447, Republic of Korea; (S.H.K.)
| | - Young Gie Lee
- Department of Physics, Kyung Hee University, Seoul 02447, Republic of Korea; (S.H.K.)
| | - Seong Jun Kang
- Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin 17101, Republic of Korea;
| | - Yongsup Park
- Department of Physics, Kyung Hee University, Seoul 02447, Republic of Korea; (S.H.K.)
- Department of Information Display, Kyung Hee University, Seoul 02447, Republic of Korea
| | - Young Duck Kim
- Department of Physics, Kyung Hee University, Seoul 02447, Republic of Korea; (S.H.K.)
- Department of Information Display, Kyung Hee University, Seoul 02447, Republic of Korea
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6
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Montblanch ARP, Barbone M, Aharonovich I, Atatüre M, Ferrari AC. Layered materials as a platform for quantum technologies. NATURE NANOTECHNOLOGY 2023:10.1038/s41565-023-01354-x. [PMID: 37322143 DOI: 10.1038/s41565-023-01354-x] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/19/2022] [Accepted: 02/17/2023] [Indexed: 06/17/2023]
Abstract
Layered materials are taking centre stage in the ever-increasing research effort to develop material platforms for quantum technologies. We are at the dawn of the era of layered quantum materials. Their optical, electronic, magnetic, thermal and mechanical properties make them attractive for most aspects of this global pursuit. Layered materials have already shown potential as scalable components, including quantum light sources, photon detectors and nanoscale sensors, and have enabled research of new phases of matter within the broader field of quantum simulations. In this Review we discuss opportunities and challenges faced by layered materials within the landscape of material platforms for quantum technologies. In particular, we focus on applications that rely on light-matter interfaces.
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Affiliation(s)
- Alejandro R-P Montblanch
- Cavendish Laboratory, University of Cambridge, Cambridge, UK
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands
| | - Matteo Barbone
- Cavendish Laboratory, University of Cambridge, Cambridge, UK
- Cambridge Graphene Centre, University of Cambridge, Cambridge, UK
- Munich Center for Quantum Science and Technology, (MCQST), Munich, Germany
- Walter Schottky Institut and Department of Electrical and Computer Engineering, Technische Universität München, Garching, Germany
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, Sydney, Australia
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, University of Technology Sydney, Ultimo, New South Wales, Sydney, Australia
| | - Mete Atatüre
- Cavendish Laboratory, University of Cambridge, Cambridge, UK.
| | - Andrea C Ferrari
- Cambridge Graphene Centre, University of Cambridge, Cambridge, UK.
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7
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Neumann M, Wei X, Morales-Inostroza L, Song S, Lee SG, Watanabe K, Taniguchi T, Götzinger S, Lee YH. Organic Molecules as Origin of Visible-Range Single Photon Emission from Hexagonal Boron Nitride and Mica. ACS NANO 2023. [PMID: 37276077 DOI: 10.1021/acsnano.3c02348] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
The discovery of room-temperature single-photon emitters (SPEs) hosted by two-dimensional hexagonal boron nitride (2D hBN) has sparked intense research interest. Although emitters in the vicinity of 2 eV have been studied extensively, their microscopic identity has remained elusive. The discussion of this class of SPEs has centered on point defects in the hBN crystal lattice, but none of the candidate defect structures have been able to capture the great heterogeneity in emitter properties that is observed experimentally. Employing a widely used sample preparation protocol but disentangling several confounding factors, we demonstrate conclusively that heterogeneous single-photon emission at ∼2 eV associated with hBN originates from organic molecules, presumably aromatic fluorophores. The appearance of those SPEs depends critically on the presence of organic processing residues during sample preparation, and emitters formed during heat treatment are not located within the hBN crystal as previously thought, but at the hBN/substrate interface. We further demonstrate that the same class of SPEs can be observed in a different 2D insulator, fluorophlogopite mica.
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Affiliation(s)
- Michael Neumann
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Xu Wei
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | | | - Seunghyun Song
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Department of Electronics Engineering, Sookmyung Women's University, Seoul 04310, Republic of Korea
| | - Sung-Gyu Lee
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Stephan Götzinger
- Max Planck Institute for the Science of Light, D-91058 Erlangen, Germany
- Department of Physics, Friedrich-Alexander University Erlangen-Nürnberg (FAU), D-91058 Erlangen, Germany
- Graduate School in Advanced Optical Technologies (SAOT), Friedrich-Alexander University Erlangen-Nürnberg (FAU), D-91052 Erlangen, Germany
| | - Young Hee Lee
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
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8
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Chandrasekaran V, Titze M, Flores AR, Campbell D, Henshaw J, Jones AC, Bielejec ES, Htoon H. High-Yield Deterministic Focused Ion Beam Implantation of Quantum Defects Enabled by In Situ Photoluminescence Feedback. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023:e2300190. [PMID: 37088736 DOI: 10.1002/advs.202300190] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/09/2023] [Revised: 03/25/2023] [Indexed: 05/03/2023]
Abstract
Focused ion beam implantation is ideally suited for placing defect centers in wide bandgap semiconductors with nanometer spatial resolution. However, the fact that only a few percent of implanted defects can be activated to become efficient single photon emitters prevents this powerful capability to reach its full potential in photonic/electronic integration of quantum defects. Here an industry adaptive scalable technique is demonstrated to deterministically create single defects in commercial grade silicon carbide by performing repeated low ion number implantation and in situ photoluminescence evaluation after each round of implantation. An array of 9 single defects in 13 targeted locations is successfully created-a ≈70% yield which is more than an order of magnitude higher than achieved in a typical single pass ion implantation. The remaining emitters exhibit non-classical photon emission statistics corresponding to the existence of at most two emitters. This approach can be further integrated with other advanced techniques such as in situ annealing and cryogenic operations to extend to other material platforms for various quantum information technologies.
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Affiliation(s)
- Vigneshwaran Chandrasekaran
- Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Michael Titze
- Sandia National Laboratories, Albuquerque, NM, 87123, USA
| | | | | | - Jacob Henshaw
- Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, NM, 87123, USA
| | - Andrew C Jones
- Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | | | - Han Htoon
- Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
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9
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Akbari H, Biswas S, Jha PK, Wong J, Vest B, Atwater HA. Lifetime-Limited and Tunable Quantum Light Emission in h-BN via Electric Field Modulation. NANO LETTERS 2022; 22:7798-7803. [PMID: 36154175 DOI: 10.1021/acs.nanolett.2c02163] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Color-center-based single-photon emitters in hexagonal boron nitride (h-BN) have shown promising photophysical properties as sources for quantum light emission. Despite significant advances toward such a goal, achieving lifetime-limited quantum light emission in h-BN has proven to be challenging, primarily due to various broadening mechanisms, including spectral diffusion. Here, we propose and experimentally demonstrate suppression of spectral diffusion by applying an electrostatic field. We observe both Stark shift tuning of the resonant emission wavelength and emission line width reduction (down to 89 MHz) nearly to the homogeneously broadened lifetime limit. Finally, we find a cubic dependence of the line width with respect to temperature at the homogeneous broadening regime. Our results suggest that field tuning in electrostatically gated heterostructures is promising as an approach to control the emission characteristics of h-BN color centers, removing spectral diffusion and providing the energy tunability necessary for integrate of quantum light emission in nanophotonic architectures.
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Affiliation(s)
- Hamidreza Akbari
- Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, California, 91106, United States
| | - Souvik Biswas
- Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, California, 91106, United States
| | - Pankaj Kumar Jha
- Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, California, 91106, United States
| | - Joeson Wong
- Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, California, 91106, United States
| | - Benjamin Vest
- Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, California, 91106, United States
- Université Paris-Saclay, Institut d'Optique Graduate School, CNRS, Laboratoire Charles Fabry, 91127 Palaiseau, France
| | - Harry A Atwater
- Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, California, 91106, United States
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10
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Gan L, Zhang D, Zhang R, Zhang Q, Sun H, Li Y, Ning CZ. Large-Scale, High-Yield Laser Fabrication of Bright and Pure Single-Photon Emitters at Room Temperature in Hexagonal Boron Nitride. ACS NANO 2022; 16:14254-14261. [PMID: 35981092 DOI: 10.1021/acsnano.2c04386] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Single-photon emitters (SPEs) play an important role in many optical quantum technologies. However, an efficient large-scale approach to the generation of high-quality SPE arrays remains an elusive goal at room temperature. Here, we demonstrate a scalable method of generating SPE arrays in hexagonal boron nitride (hBN) with high yield, brightness, and purity using single-pulse irradiation by a femtosecond laser. Our use of a single pulse per defect pattern minimized heat-related damages and improved the purity of SPEs compared with the previous laser-based approaches. Under the optimized fabrication and post-treatment conditions, SPE arrays were successfully generated from the 3.0 μm defect patterns with 43% yield, the highest among the 2D-based top-down approaches. Importantly, we found that 100% of the bright defect patterns are SPEs with g2(0) < 0.5 under such conditions, with the lowest g2(0) = 0.06 ± 0.03. Our SPEs also exhibit the highest brightness with the saturation SPE rate at 7.15 million counts per second. We believe that our overall high-quality and large-scale approach will help a wide range of applications of SPEs in on-chip quantum technologies.
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Affiliation(s)
- Lin Gan
- Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
- International Center for Nano-Optoelectronics, Tsinghua University, Beijing 100084, China
| | - Danyang Zhang
- Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
| | - Ruiling Zhang
- Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
| | - Qiyao Zhang
- Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
| | - Hao Sun
- Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
- International Center for Nano-Optoelectronics, Tsinghua University, Beijing 100084, China
| | - Yongzhuo Li
- Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
- International Center for Nano-Optoelectronics, Tsinghua University, Beijing 100084, China
| | - Cun-Zheng Ning
- Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
- International Center for Nano-Optoelectronics, Tsinghua University, Beijing 100084, China
- College of Integrated Circuits and Optoelectronic Chips, Shenzhen Technology University, Shenzhen 518118, China
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11
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Pal A, Zhang S, Chavan T, Agashiwala K, Yeh CH, Cao W, Banerjee K. Quantum-Engineered Devices Based on 2D Materials for Next-Generation Information Processing and Storage. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022:e2109894. [PMID: 35468661 DOI: 10.1002/adma.202109894] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2021] [Revised: 04/11/2022] [Indexed: 06/14/2023]
Abstract
As an approximation to the quantum state of solids, the band theory, developed nearly seven decades ago, fostered the advance of modern integrated solid-state electronics, one of the most successful technologies in the history of human civilization. Nonetheless, their rapidly growing energy consumption and accompanied environmental issues call for more energy-efficient electronics and optoelectronics, which necessitate the exploration of more advanced quantum mechanical effects, such as band-to-band tunneling, spin-orbit coupling, spin-valley locking, and quantum entanglement. The emerging 2D layered materials, featured by their exotic electrical, magnetic, optical, and structural properties, provide a revolutionary low-dimensional and manufacture-friendly platform (and many more opportunities) to implement these quantum-engineered devices, compared to the traditional electronic materials system. Here, the progress in quantum-engineered devices is reviewed and the opportunities/challenges of exploiting 2D materials are analyzed to highlight their unique quantum properties that enable novel energy-efficient devices, and useful insights to quantum device engineers and 2D-material scientists are provided.
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Affiliation(s)
- Arnab Pal
- ECE Department, University of California, Santa Barbara, Santa Barbara, CA, 93106, USA
| | - Shuo Zhang
- ECE Department, University of California, Santa Barbara, Santa Barbara, CA, 93106, USA
- College of ISEE, Zhejiang University, Hangzhou, 310027, China
| | - Tanmay Chavan
- ECE Department, University of California, Santa Barbara, Santa Barbara, CA, 93106, USA
| | - Kunjesh Agashiwala
- ECE Department, University of California, Santa Barbara, Santa Barbara, CA, 93106, USA
| | - Chao-Hui Yeh
- ECE Department, University of California, Santa Barbara, Santa Barbara, CA, 93106, USA
| | - Wei Cao
- ECE Department, University of California, Santa Barbara, Santa Barbara, CA, 93106, USA
| | - Kaustav Banerjee
- ECE Department, University of California, Santa Barbara, Santa Barbara, CA, 93106, USA
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12
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Ghosh Dastidar M, Thekkooden I, Nayak PK, Praveen Bhallamudi V. Quantum emitters and detectors based on 2D van der Waals materials. NANOSCALE 2022; 14:5289-5313. [PMID: 35322836 DOI: 10.1039/d1nr08193d] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Light plays an essential role in our world, with several technologies relying on it. Photons will also play an important role in the emerging quantum technologies, which are primed to have a transformative effect on our society. The development of single-photon sources and ultra-sensitive photon detectors is crucial. Solid-state emitters are being heavily pursued for developing truly single-photon sources for scalable technology. On the detectors' side, the main challenge lies in inventing sensitive detectors operating at sub-optical frequencies. This review highlights the promising research being conducted for the development of quantum emitters and detectors based on two-dimensional van der Waals (2D-vdW) materials. Several 2D-vdW materials, from canonical graphene to transition metal dichalcogenides and their heterostructures, have generated a lot of excitement due to their tunable emission and detection properties. The recent developments in the creation, fabrication and control of quantum emitters hosted by 2D-vdW materials and their potential applications in integrated photonic devices are discussed. Furthermore, the progress in enhancing the photon-counting potential of 2D material-based detectors, viz. 2D photodetectors, bolometers and superconducting single-photon detectors functioning at various wavelengths is also reported.
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Affiliation(s)
- Madhura Ghosh Dastidar
- 2D Materials Research and Innovation Group, Micro Nano and Bio-Fluidics Group, Quantum Centers in Diamond and Emerging Materials (QuCenDiEM) Group, Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India
| | - Immanuel Thekkooden
- Quantum Centers in Diamond and Emerging Materials (QuCenDiEM) Group, Department of Electrical Engineering, Indian Institute of Technology Madras, Chennai 600036, India
| | - Pramoda K Nayak
- 2D Materials Research and Innovation Group, Micro Nano and Bio-Fluidics Group, Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India.
| | - Vidya Praveen Bhallamudi
- Quantum Centers in Diamond and Emerging Materials (QuCenDiEM) Group, Departments of Physics and Electrical Engineering, Indian Institute of Technology Madras, Chennai 600036, India.
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13
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Valagiannopoulos C. Nanotubes as sinks for quantum particles. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA. A, OPTICS, IMAGE SCIENCE, AND VISION 2022; 39:580-586. [PMID: 35471380 DOI: 10.1364/josaa.449520] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/25/2021] [Accepted: 02/08/2022] [Indexed: 06/14/2023]
Abstract
Nanotubes with proper thickness, size, and texture make ultra-efficient sinks for quantum particles traveling into specific background media. Several optimal semiconducting cylindrical layers are reported to achieve enhancement in the trapping of matter waves by two to three orders of magnitude. The identified shells can be used as pieces in quantum devices that involve the focusing of incident beams, spanning from charge pumps and superconducting capacitors to radiation pattern controllers and matter-wave lenses.
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14
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Tan Q, Lai JM, Liu XL, Guo D, Xue Y, Dou X, Sun BQ, Deng HX, Tan PH, Aharonovich I, Gao W, Zhang J. Donor-Acceptor Pair Quantum Emitters in Hexagonal Boron Nitride. NANO LETTERS 2022; 22:1331-1337. [PMID: 35073101 DOI: 10.1021/acs.nanolett.1c04647] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Quantum emitters are needed for a myriad of applications ranging from quantum sensing to quantum computing. Hexagonal boron nitride (hBN) quantum emitters are one of the most promising solid-state platforms to date due to their high brightness and stability and the possibility of a spin-photon interface. However, the understanding of the physical origins of the single-photon emitters (SPEs) is still limited. Here we report dense SPEs in hBN across the entire visible spectrum and present evidence that most of these SPEs can be well explained by donor-acceptor pairs (DAPs). On the basis of the DAP transition generation mechanism, we calculated their wavelength fingerprint, matching well with the experimentally observed photoluminescence spectrum. Our work serves as a step forward for the physical understanding of SPEs in hBN and their applications in quantum technologies.
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Affiliation(s)
- Qinghai Tan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371 Singapore
| | - Jia-Min Lai
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xue-Lu Liu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Dan Guo
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yongzhou Xue
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xiuming Dou
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Bao-Quan Sun
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Hui-Xiong Deng
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Ping-Heng Tan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Beijing Academy of Quantum Information Science, Beijing 100193, China
- CAS Center of Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 101408, China
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Faculty of Science University of Technology Sydney, New South Wales 2007, Australia
| | - Weibo Gao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371 Singapore
| | - Jun Zhang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Beijing Academy of Quantum Information Science, Beijing 100193, China
- CAS Center of Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 101408, China
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15
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Xu X, Martin ZO, Sychev D, Lagutchev AS, Chen YP, Taniguchi T, Watanabe K, Shalaev VM, Boltasseva A. Creating Quantum Emitters in Hexagonal Boron Nitride Deterministically on Chip-Compatible Substrates. NANO LETTERS 2021; 21:8182-8189. [PMID: 34606291 DOI: 10.1021/acs.nanolett.1c02640] [Citation(s) in RCA: 24] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional hexagonal boron nitride (hBN) that hosts room-temperature single-photon emitters (SPEs) is promising for quantum information applications. An important step toward the practical application of hBN is the on-demand, position-controlled generation of SPEs. Strategies reported for deterministic creation of hBN SPEs either rely on substrate nanopatterning that is not compatible with integrated photonics or utilize radiation sources that might introduce unpredictable damage or contamination to hBN. Here, we report a radiation- and lithography-free route to deterministically activate hBN SPEs by nanoindentation with atomic force microscopy (AFM). The method applies to hBN flakes on flat silicon dioxide-silicon substrates that can be readily integrated into on-chip photonic devices. The achieved SPE yields are above 30% for multiple indent sizes, and a maximum yield of 36% is demonstrated for indents around 400 nm. Our results mark an important step toward the deterministic creation and integration of hBN SPEs with photonic and plasmonic devices.
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Affiliation(s)
- Xiaohui Xu
- School of Materials Engineering, Purdue University, West Lafayette, Indiana 47906, United States
| | - Zachariah O Martin
- School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47906, United States
| | - Demid Sychev
- School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47906, United States
| | - Alexei S Lagutchev
- School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47906, United States
| | - Yong P Chen
- School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47906, United States
- Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana 47906, United States
- Department of Physics and Astronomy, Aarhus University, Aarhus 8000, Denmark
| | - Takashi Taniguchi
- National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
| | - Kenji Watanabe
- National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
| | - Vladimir M Shalaev
- School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47906, United States
| | - Alexandra Boltasseva
- School of Materials Engineering, Purdue University, West Lafayette, Indiana 47906, United States
- School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47906, United States
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16
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Chen Y, Li C, White S, Nonahal M, Xu ZQ, Watanabe K, Taniguchi T, Toth M, Tran TT, Aharonovich I. Generation of High-Density Quantum Emitters in High-Quality, Exfoliated Hexagonal Boron Nitride. ACS APPLIED MATERIALS & INTERFACES 2021; 13:47283-47292. [PMID: 34549932 DOI: 10.1021/acsami.1c14863] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Single-photon emitters in hexagonal boron nitride (hBN) are promising constituents for integrated quantum photonics. Specifically, engineering these emitters in large-area, high-quality, exfoliated hBN is needed for their incorporation into photonic devices and two dimensional heterostructures. Here, we report on two different routes to generate high-density quantum emitters with excellent optical properties-including high brightness and photostability. We study in detail high-temperature annealing and plasma treatments as an efficient means to generate dense emitters. We show that both an optimal oxygen flow rate and annealing temperature are required for the formation of high-density quantum emitters. In parallel, we demonstrate that the plasma treatment in various environments, followed by standard annealing is also an effective route for emission engineering. Our work provides vital information for the fabrication of quantum emitters in high-quality, exfoliated hBN flakes and paves the way toward the integration of the quantum emitters with photonic devices.
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Affiliation(s)
- Yongliang Chen
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Chi Li
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Simon White
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Milad Nonahal
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Zai-Quan Xu
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Milos Toth
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Center of Excellence for Transformative Meta-Optical Systems (TMOS), Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Toan Trong Tran
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Center of Excellence for Transformative Meta-Optical Systems (TMOS), Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
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17
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Krečmarová M, Canet-Albiach R, Pashaei-Adl H, Gorji S, Muñoz-Matutano G, Nesládek M, Martínez-Pastor JP, Sánchez-Royo JF. Extrinsic Effects on the Optical Properties of Surface Color Defects Generated in Hexagonal Boron Nitride Nanosheets. ACS APPLIED MATERIALS & INTERFACES 2021; 13:46105-46116. [PMID: 34520163 PMCID: PMC8485329 DOI: 10.1021/acsami.1c11060] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/14/2021] [Indexed: 05/31/2023]
Abstract
Hexagonal boron nitride (hBN) is a wide-band gap van der Waals material able to host light-emitting centers behaving as single photon sources. Here, we report the generation of color defects in hBN nanosheets dispersed on different kinds of substrates by thermal treatment processes. The optical properties of these defects have been studied using microspectroscopy techniques and far-field simulations of their light emission. Using these techniques, we have found that subsequent ozone treatments of the deposited hBN nanosheets improve the optical emission properties of created defects, as revealed by their zero-phonon linewidth narrowing and reduction of background emission. Microlocalized color defects deposited on dielectric substrates show bright (≈1 MHz) and stable room-temperature light emission with zero-phonon line peak energy varying from 1.56 to 2.27 eV, being the most probable value 2.16 eV. In addition to this, we have observed a substrate dependence of the optical performance of the generated color defects. The energy range of the emitters prepared on gold substrates is strongly reduced, as compared to that observed in dielectric substrates or even alumina. We attribute this effect to the quenching of low-energy color defects (these of energies lower than 1.9 eV) when gold substrates are used, which reveals the surface nature of the defects created in hBN nanosheets. Results described here are important for future quantum light experiments and their integration in photonic chips.
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Affiliation(s)
- Marie Krečmarová
- Instituto
de Ciencia de Materiales, Universidad de
Valencia (ICMUV), P.O. Box 22085, 46071 Valencia, Spain
| | - Rodolfo Canet-Albiach
- Instituto
de Ciencia de Materiales, Universidad de
Valencia (ICMUV), P.O. Box 22085, 46071 Valencia, Spain
| | - Hamid Pashaei-Adl
- Instituto
de Ciencia de Materiales, Universidad de
Valencia (ICMUV), P.O. Box 22085, 46071 Valencia, Spain
| | - Setatira Gorji
- Instituto
de Ciencia de Materiales, Universidad de
Valencia (ICMUV), P.O. Box 22085, 46071 Valencia, Spain
| | - Guillermo Muñoz-Matutano
- Instituto
de Ciencia de Materiales, Universidad de
Valencia (ICMUV), P.O. Box 22085, 46071 Valencia, Spain
| | - Miloš Nesládek
- Institute
for Materials Research, Material Physics
Division University of Hasselt, Wetenschapspark 1, B 3590 Diepenbeek, Belgium
| | - Juan P. Martínez-Pastor
- Instituto
de Ciencia de Materiales, Universidad de
Valencia (ICMUV), P.O. Box 22085, 46071 Valencia, Spain
| | - Juan F. Sánchez-Royo
- Instituto
de Ciencia de Materiales, Universidad de
Valencia (ICMUV), P.O. Box 22085, 46071 Valencia, Spain
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18
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Stewart JC, Fan Y, Danial JSH, Goetz A, Prasad AS, Burton OJ, Alexander-Webber JA, Lee SF, Skoff SM, Babenko V, Hofmann S. Quantum Emitter Localization in Layer-Engineered Hexagonal Boron Nitride. ACS NANO 2021; 15:13591-13603. [PMID: 34347438 DOI: 10.1021/acsnano.1c04467] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/06/2023]
Abstract
Hexagonal boron nitride (hBN) is a promising host material for room-temperature, tunable solid-state quantum emitters. A key technological challenge is deterministic and scalable spatial emitter localization, both laterally and vertically, while maintaining the full advantages of the 2D nature of the material. Here, we demonstrate emitter localization in hBN in all three dimensions via a monolayer (ML) engineering approach. We establish pretreatment processes for hBN MLs to either fully suppress or activate emission, thereby enabling such differently treated MLs to be used as select building blocks to achieve vertical (z) emitter localization at the atomic layer level. We show that emitter bleaching of ML hBN can be suppressed by sandwiching between two protecting hBN MLs, and that such thin stacks retain opportunities for external control of emission. We exploit this to achieve lateral (x-y) emitter localization via the addition of a patterned graphene mask that quenches fluorescence. Such complete emitter site localization is highly versatile, compatible with planar, scalable processing, allowing tailored approaches to addressable emitter array designs for advanced characterization, monolithic device integration, and photonic circuits.
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Affiliation(s)
- James Callum Stewart
- Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom
| | - Ye Fan
- Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom
| | - John S H Danial
- The Yusuf Hamied Department of Chemistry, University of Cambridge, Lensfield Road, Cambridge CB2 1EW, United Kingdom
| | - Alexander Goetz
- Institute of Atomic and Subatomic Physics, Vienna University of Technology, Stadionallee 2, 1020 Vienna, Austria
| | - Adarsh S Prasad
- Institute of Atomic and Subatomic Physics, Vienna University of Technology, Stadionallee 2, 1020 Vienna, Austria
| | - Oliver J Burton
- Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom
| | - Jack A Alexander-Webber
- Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom
| | - Steven F Lee
- The Yusuf Hamied Department of Chemistry, University of Cambridge, Lensfield Road, Cambridge CB2 1EW, United Kingdom
| | - Sarah M Skoff
- Institute of Atomic and Subatomic Physics, Vienna University of Technology, Stadionallee 2, 1020 Vienna, Austria
| | - Vitaliy Babenko
- Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom
| | - Stephan Hofmann
- Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom
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19
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Fournier C, Plaud A, Roux S, Pierret A, Rosticher M, Watanabe K, Taniguchi T, Buil S, Quélin X, Barjon J, Hermier JP, Delteil A. Position-controlled quantum emitters with reproducible emission wavelength in hexagonal boron nitride. Nat Commun 2021; 12:3779. [PMID: 34145254 PMCID: PMC8213715 DOI: 10.1038/s41467-021-24019-6] [Citation(s) in RCA: 44] [Impact Index Per Article: 14.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/18/2021] [Accepted: 05/27/2021] [Indexed: 11/17/2022] Open
Abstract
Single photon emitters (SPEs) in low-dimensional layered materials have recently gained a large interest owing to the auspicious perspectives of integration and extreme miniaturization offered by this class of materials. However, accurate control of both the spatial location and the emission wavelength of the quantum emitters is essentially lacking to date, thus hindering further technological steps towards scalable quantum photonic devices. Here, we evidence SPEs in high purity synthetic hexagonal boron nitride (hBN) that can be activated by an electron beam at chosen locations. SPE ensembles are generated with a spatial accuracy better than the cubed emission wavelength, thus opening the way to integration in optical microstructures. Stable and bright single photon emission is subsequently observed in the visible range up to room temperature upon non-resonant laser excitation. Moreover, the low-temperature emission wavelength is reproducible, with an ensemble distribution of width 3 meV, a statistical dispersion that is more than one order of magnitude lower than the narrowest wavelength spreads obtained in epitaxial hBN samples. Our findings constitute an essential step towards the realization of top-down integrated devices based on identical quantum emitters in 2D materials. Accurate control of the spatial location and the emission wavelength of single photon emitters (SPEs) in van der Waals materials is a crucial yet challenging endeavour. Here, the authors use an electron beam to generate SPE ensembles in high purity synthetic hBN with enhanced spatial accuracy and emission reproducibility.
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Affiliation(s)
| | - Alexandre Plaud
- Université Paris-Saclay, UVSQ, CNRS, GEMaC, Versailles, France
| | - Sébastien Roux
- Université Paris-Saclay, UVSQ, CNRS, GEMaC, Versailles, France
| | - Aurélie Pierret
- Laboratoire de Physique de l'École Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université de Paris, Paris, France
| | - Michael Rosticher
- Laboratoire de Physique de l'École Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université de Paris, Paris, France
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Stéphanie Buil
- Université Paris-Saclay, UVSQ, CNRS, GEMaC, Versailles, France
| | - Xavier Quélin
- Université Paris-Saclay, UVSQ, CNRS, GEMaC, Versailles, France
| | - Julien Barjon
- Université Paris-Saclay, UVSQ, CNRS, GEMaC, Versailles, France
| | | | - Aymeric Delteil
- Université Paris-Saclay, UVSQ, CNRS, GEMaC, Versailles, France.
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20
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Shaik ABDAJWI, Palla P. Optical quantum technologies with hexagonal boron nitride single photon sources. Sci Rep 2021; 11:12285. [PMID: 34112837 PMCID: PMC8192930 DOI: 10.1038/s41598-021-90804-4] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/19/2020] [Accepted: 05/11/2021] [Indexed: 02/05/2023] Open
Abstract
Single photon quantum emitters are important building blocks of optical quantum technologies. Hexagonal boron nitride (hBN), an atomically thin wide band gap two dimensional material, hosts robust, optically active luminescent point defects, which are known to reduce phonon lifetimes, promises as a stable single-photon source at room temperature. In this Review, we present the recent advances in hBN quantum light emission, comparisons with other 2D material based quantum sources and analyze the performance of hBN quantum emitters. We also discuss state-of-the-art stable single photon emitter's fabrication in UV, visible and near IR regions, their activation, characterization techniques, photostability towards a wide range of operating temperatures and harsh environments, Density-functional theory predictions of possible hBN defect structures for single photon emission in UV to IR regions and applications of single photon sources in quantum communication and quantum photonic circuits with associated potential obstacles.
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Affiliation(s)
- Akbar Basha Dhu-Al-Jalali-Wal-Ikram Shaik
- Center for Nanotechnology Research & Department of Micro and Nanoelectronics, School of Electronics Engineering, Vellore Institute of Technology (VIT), Vellore, Tamil Nadu, 632014, India
| | - Penchalaiah Palla
- Center for Nanotechnology Research & Department of Micro and Nanoelectronics, School of Electronics Engineering, Vellore Institute of Technology (VIT), Vellore, Tamil Nadu, 632014, India.
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21
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Li C, Mendelson N, Ritika R, Chen Y, Xu ZQ, Toth M, Aharonovich I. Scalable and Deterministic Fabrication of Quantum Emitter Arrays from Hexagonal Boron Nitride. NANO LETTERS 2021; 21:3626-3632. [PMID: 33870699 DOI: 10.1021/acs.nanolett.1c00685] [Citation(s) in RCA: 27] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
We demonstrate the fabrication of large-scale arrays of single-photon emitters (SPEs) in hexagonal boron nitride (hBN). Bottom-up growth of hBN onto nanoscale arrays of dielectric pillars yields corresponding arrays of hBN emitters at the pillar sites. Statistical analysis shows that the pillar diameter is critical for isolating single defects, and diameters of ∼250 nm produce a near-unity yield of a single emitter at each pillar site. Our results constitute a promising route toward spatially controlled generation of hBN SPEs and provide an effective and efficient method to create large-scale SPE arrays. The results pave the way to scalability and high throughput fabrication of SPEs for advanced quantum photonic applications.
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Affiliation(s)
- Chi Li
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Noah Mendelson
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Ritika Ritika
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - YongLiang Chen
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Zai-Quan Xu
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Milos Toth
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
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22
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Malein RNE, Khatri P, Ramsay AJ, Luxmoore IJ. Stimulated Emission Depletion Spectroscopy of Color Centers in Hexagonal Boron Nitride. ACS PHOTONICS 2021; 8:1007-1012. [PMID: 34056033 DOI: 10.1021/acsphotonics.1c00423] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/17/2020] [Indexed: 05/25/2023]
Abstract
We demonstrate the use of Stimulated Emission Depletion (STED) spectroscopy to map the electron-optical-phonon sideband of the ground state of the radiative transition of color centers in hexagonal boron nitride emitting at 2.0-2.2 eV, with in-plane linear polarization. The measurements are compared to photoluminescence of excitation (PLE) spectra that maps the electron-optical-phonon sideband of the excited state. The main qualitative difference is a red-shift in the longitudinal optical phonon peak associated with E 1u symmetry at the zone center. We compare our results to theoretical work on different defect species in hBN and find they are consistent with a carbon-based defect.
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Affiliation(s)
| | - Prince Khatri
- College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter EX4 4QF, United Kingdom
| | - Andrew J Ramsay
- Hitachi Cambridge Laboratory, Hitachi Europe Ltd., Cambridge CB3 0HE, United Kingdom
| | - Isaac J Luxmoore
- College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter EX4 4QF, United Kingdom
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23
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Malein RNE, Khatri P, Ramsay AJ, Luxmoore IJ. Stimulated Emission Depletion Spectroscopy of Color Centers in Hexagonal Boron Nitride. ACS PHOTONICS 2021; 8:1007-1012. [PMID: 34056033 PMCID: PMC8155571 DOI: 10.1021/acsphotonics.0c01917] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/17/2020] [Indexed: 05/25/2023]
Abstract
We demonstrate the use of Stimulated Emission Depletion (STED) spectroscopy to map the electron-optical-phonon sideband of the ground state of the radiative transition of color centers in hexagonal boron nitride emitting at 2.0-2.2 eV, with in-plane linear polarization. The measurements are compared to photoluminescence of excitation (PLE) spectra that maps the electron-optical-phonon sideband of the excited state. The main qualitative difference is a red-shift in the longitudinal optical phonon peak associated with E 1u symmetry at the zone center. We compare our results to theoretical work on different defect species in hBN and find they are consistent with a carbon-based defect.
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Affiliation(s)
| | - Prince Khatri
- College
of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter EX4 4QF, United Kingdom
| | - Andrew J. Ramsay
- Hitachi
Cambridge Laboratory, Hitachi Europe Ltd., Cambridge CB3 0HE, United Kingdom
| | - Isaac J. Luxmoore
- College
of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter EX4 4QF, United Kingdom
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24
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Jara C, Rauch T, Botti S, Marques MAL, Norambuena A, Coto R, Castellanos-Águila JE, Maze JR, Munoz F. First-Principles Identification of Single Photon Emitters Based on Carbon Clusters in Hexagonal Boron Nitride. J Phys Chem A 2021; 125:1325-1335. [PMID: 33554602 DOI: 10.1021/acs.jpca.0c07339] [Citation(s) in RCA: 18] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
A recent study associates carbon with single photon emitters (SPEs) in hexagonal boron nitride (h-BN). This observation, together with the high mobility of carbon in h-BN, suggests the existence of SPEs based on carbon clusters. Here, by means of density functional theory calculations, we studied clusters of substitutional carbon atoms up to tetramers in h-BN. Two different conformations of neutral carbon trimers have zero-point line energies and shifts of the phonon sideband compatible with typical photoluminescence spectra. Moreover, some conformations of two small C clusters next to each other result in photoluminescence spectra similar to those found in the experiments. We also showed that vacancies are unable to reproduce the typical features of the phonon sideband observed in most measurements because of the large spectral weight of low-energy breathing modes, ubiquitous in such defects.
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Affiliation(s)
- Cesar Jara
- LAAS-CNRS, Université de Toulouse, CNRS, 31031 Toulouse, France
| | - Tomáš Rauch
- Institut für Festkörpertheorie und -Optik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena, Germany.,European Theoretical Spectroscopy Facility
| | - Silvana Botti
- Institut für Festkörpertheorie und -Optik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena, Germany.,European Theoretical Spectroscopy Facility
| | - Miguel A L Marques
- Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, 06120 Halle/Saale, Germany
| | - Ariel Norambuena
- Centro de Investigación DAiTA Lab, Facultad de Estudios Interdisciplinarios, Universidad Mayor, 7550000 Santiago, Chile
| | - Raul Coto
- Centro de Investigación DAiTA Lab, Facultad de Estudios Interdisciplinarios, Universidad Mayor, 7550000 Santiago, Chile
| | - J E Castellanos-Águila
- Departamento de Estudios Multidisciplinarios, Universidad de Guanajuato, Av. Yacatitas, S/N Col. Yacatitas, Yuriria, Guanajuato 36940, Mexico
| | - Jeronimo R Maze
- Institute of Physics, Pontificia Universidad Católica de Chile, 7820436 Santiago, Chile.,Research Center for Nanoscale and Advanced Materials (CIEN), Pontificia Universidad Católica de Chile, 7820436 Santiago, Chile
| | - Francisco Munoz
- Center for the Development of Nanoscience and Nanotechnology, CEDENNA, 9170124 Santiago, Chile.,Departamento de Física, Facultad de Ciencias, Universidad de Chile, 7800024 Santiago Chile
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25
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Fischer M, Caridad JM, Sajid A, Ghaderzadeh S, Ghorbani-Asl M, Gammelgaard L, Bøggild P, Thygesen KS, Krasheninnikov AV, Xiao S, Wubs M, Stenger N. Controlled generation of luminescent centers in hexagonal boron nitride by irradiation engineering. SCIENCE ADVANCES 2021; 7:7/8/eabe7138. [PMID: 33597249 PMCID: PMC7888958 DOI: 10.1126/sciadv.abe7138] [Citation(s) in RCA: 25] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/11/2020] [Accepted: 01/06/2021] [Indexed: 05/22/2023]
Abstract
Luminescent centers in the two-dimensional material hexagonal boron nitride have the potential to enable quantum applications at room temperature. To be used for applications, it is crucial to generate these centers in a controlled manner and to identify their microscopic nature. Here, we present a method inspired by irradiation engineering with oxygen atoms. We systematically explore the influence of the kinetic energy and the irradiation fluence on the generation of luminescent centers. We find modifications of their density for both parameters, while a fivefold enhancement is observed with increasing fluence. Molecular dynamics simulations clarify the generation mechanism of these centers and their microscopic nature. We infer that VNCB and [Formula: see text] are the most likely centers formed. Ab initio calculations of their optical properties show excellent agreement with our experiments. Our methodology generates quantum emitters in a controlled manner and provides insights into their microscopic nature.
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Affiliation(s)
- M Fischer
- Department of Photonics Engineering, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
- Center for Nanostructured Graphene, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
- NanoPhoton - Center for Nanophotonics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - J M Caridad
- Center for Nanostructured Graphene, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
- Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
- Department of Physics and NanoLund, Lund University, box 118, 22100 Lund, Sweden
| | - A Sajid
- Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - S Ghaderzadeh
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany
| | - M Ghorbani-Asl
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany
| | - L Gammelgaard
- Center for Nanostructured Graphene, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
- Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - P Bøggild
- Center for Nanostructured Graphene, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
- Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - K S Thygesen
- Center for Nanostructured Graphene, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
- Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - A V Krasheninnikov
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany
- Department of Applied Physics, Aalto University, 00076 Espoo, Finland
| | - S Xiao
- Department of Photonics Engineering, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
- Center for Nanostructured Graphene, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
- NanoPhoton - Center for Nanophotonics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - M Wubs
- Department of Photonics Engineering, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
- Center for Nanostructured Graphene, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
- NanoPhoton - Center for Nanophotonics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - N Stenger
- Department of Photonics Engineering, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark.
- Center for Nanostructured Graphene, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
- NanoPhoton - Center for Nanophotonics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
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26
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Song C, Noh G, Kim TS, Kang M, Song H, Ham A, Jo MK, Cho S, Chai HJ, Cho SR, Cho K, Park J, Song S, Song I, Bang S, Kwak JY, Kang K. Growth and Interlayer Engineering of 2D Layered Semiconductors for Future Electronics. ACS NANO 2020; 14:16266-16300. [PMID: 33301290 DOI: 10.1021/acsnano.0c06607] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Layered materials that do not form a covalent bond in a vertical direction can be prepared in a few atoms to one atom thickness without dangling bonds. This distinctive characteristic of limiting thickness around the sub-nanometer level allowed scientists to explore various physical phenomena in the quantum realm. In addition to the contribution to fundamental science, various applications were proposed. Representatively, they were suggested as a promising material for future electronics. This is because (i) the dangling-bond-free nature inhibits surface scattering, thus carrier mobility can be maintained at sub-nanometer range; (ii) the ultrathin nature allows the short-channel effect to be overcome. In order to establish fundamental discoveries and utilize them in practical applications, appropriate preparation methods are required. On the other hand, adjusting properties to fit the desired application properly is another critical issue. Hence, in this review, we first describe the preparation method of layered materials. Proper growth techniques for target applications and the growth of emerging materials at the beginning stage will be extensively discussed. In addition, we suggest interlayer engineering via intercalation as a method for the development of artificial crystal. Since infinite combinations of the host-intercalant combination are possible, it is expected to expand the material system from the current compound system. Finally, inevitable factors that layered materials must face to be used as electronic applications will be introduced with possible solutions. Emerging electronic devices realized by layered materials are also discussed.
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Affiliation(s)
- Chanwoo Song
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Gichang Noh
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
- Center for Electronic Materials, Korea Institute of Science and Technology (KIST), Seoul 02792, Korea
| | - Tae Soo Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Minsoo Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Hwayoung Song
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Ayoung Ham
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Min-Kyung Jo
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
- Operando Methodology and Measurement Team, Interdisciplinary Materials Measurement Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Korea
| | - Seorin Cho
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Hyun-Jun Chai
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Seong Rae Cho
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Kiwon Cho
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Jeongwon Park
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Seungwoo Song
- Operando Methodology and Measurement Team, Interdisciplinary Materials Measurement Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Korea
| | - Intek Song
- Department of Applied Chemistry, Andong National University, Andong 36728, Korea
| | - Sunghwan Bang
- Materials & Production Engineering Research Institute, LG Electronics, Pyeongtaek-si 17709, Korea
| | - Joon Young Kwak
- Center for Electronic Materials, Korea Institute of Science and Technology (KIST), Seoul 02792, Korea
| | - Kibum Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
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27
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Yim D, Yu M, Noh G, Lee J, Seo H. Polarization and Localization of Single-Photon Emitters in Hexagonal Boron Nitride Wrinkles. ACS APPLIED MATERIALS & INTERFACES 2020; 12:36362-36369. [PMID: 32677428 DOI: 10.1021/acsami.0c09740] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
Color centers in two-dimensional hexagonal boron nitride (h-BN) have recently emerged as stable and bright single-photon emitters (SPEs) operating at room temperature. In this study, we combine theory and experiment to show that vacancy-based SPEs selectively form at nanoscale wrinkles in h-BN with its optical dipole preferentially aligned to the wrinkle direction. By using density functional theory calculations, we find that the wrinkle's curvature plays a crucial role in localizing vacancy-based SPE candidates and aligning the defect's symmetry plane to the wrinkle direction. By performing optical measurements on SPEs created in h-BN single-crystal flakes, we experimentally confirm the wrinkle-induced generation of SPEs and their polarization alignment to the wrinkle direction. Our results not only provide a new route to controlling the atomic position and the optical property of the SPEs but also revealed the possible crystallographic origin of the SPEs in h-BN, greatly enhancing their potential for use in solid-state quantum photonics and quantum information processing.
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Affiliation(s)
- Donggyu Yim
- Department of Physics and Department of Energy Systems Research, Ajou University, Suwon, Gyeonggi 16499, Korea
| | - Mihyang Yu
- Department of Physics and Department of Energy Systems Research, Ajou University, Suwon, Gyeonggi 16499, Korea
| | - Gichang Noh
- Department of Physics and Department of Energy Systems Research, Ajou University, Suwon, Gyeonggi 16499, Korea
| | - Jieun Lee
- Department of Physics and Department of Energy Systems Research, Ajou University, Suwon, Gyeonggi 16499, Korea
| | - Hosung Seo
- Department of Physics and Department of Energy Systems Research, Ajou University, Suwon, Gyeonggi 16499, Korea
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28
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Fröch JE, Kim S, Mendelson N, Kianinia M, Toth M, Aharonovich I. Coupling Hexagonal Boron Nitride Quantum Emitters to Photonic Crystal Cavities. ACS NANO 2020; 14:7085-7091. [PMID: 32401482 DOI: 10.1021/acsnano.0c01818] [Citation(s) in RCA: 28] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Quantum photonics technologies require a scalable approach for the integration of nonclassical light sources with photonic resonators to achieve strong light confinement and enhancement of quantum light emission. Point defects from hexagonal boron nitride (hBN) are among the front runners for single photon sources due to their ultra-bright emission; however, the coupling of hBN defects to photonic crystal cavities has so far remained elusive. Here we demonstrate on-chip integration of hBN quantum emitters with photonic crystal cavities from silicon nitride (Si3N4) and achieve an experimentally measured quality factor (Q-factor) of 3300 for hBN/Si3N4 hybrid cavities. We observed 6-fold photoluminescence enhancement of an hBN single photon emission at room temperature. Our work will be useful for further development of cavity quantum electrodynamic experiments and on-chip integration of two-dimensional (2D) materials.
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Affiliation(s)
- Johannes E Fröch
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Sejeong Kim
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Noah Mendelson
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Mehran Kianinia
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Milos Toth
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
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29
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Zhou X, Zhang Z, Guo W. Dislocations as Single Photon Sources in Two-Dimensional Semiconductors. NANO LETTERS 2020; 20:4136-4143. [PMID: 32453959 DOI: 10.1021/acs.nanolett.9b05305] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Single photon sources hold great promise in quantum information technologies and are often materialized by single atoms, quantum dots, and point defects in dielectric materials. Yet, these entities are vulnerable to annealing and chemical passivation, ultimately influencing the stability of photonic devices. Here, we show that topologically stable dislocations in transition metal dichalcogenide monolayers can act as single photon sources, as supported by calculated defect levels, diploe matrix elements for transition, and excitation lifetimes with first-principles. The emission from dislocations can range from 0.48 to 1.29 eV by varying their structure, charge state, and chemical makeup in contrast to the visible range provided by previously reported sources. Since recent experiments have controllably created dislocations in monolayer materials, these results open the door to utilizing robustly stable defects for quantum computing.
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Affiliation(s)
- Xiaocheng Zhou
- State Key Laboratory of Mechanics and Control of Mechanical Structures, Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, and Institute of Nanoscience, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
| | - Zhuhua Zhang
- State Key Laboratory of Mechanics and Control of Mechanical Structures, Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, and Institute of Nanoscience, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
| | - Wanlin Guo
- State Key Laboratory of Mechanics and Control of Mechanical Structures, Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, and Institute of Nanoscience, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
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30
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Khatri P, Ramsay AJ, Malein RN, Chong HMH, Luxmoore IJ. Optical Gating of Photoluminescence from Color Centers in Hexagonal Boron Nitride. NANO LETTERS 2020; 20:4256-4263. [PMID: 32383892 PMCID: PMC7304068 DOI: 10.1021/acs.nanolett.0c00751] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/20/2020] [Revised: 05/08/2020] [Indexed: 05/05/2023]
Abstract
We report on multicolor excitation experiments with color centers in hexagonal boron nitride at cryogenic temperatures. We demonstrate controllable optical switching between bright and dark states of color centers emitting around 2 eV. Resonant, or quasi-resonant, excitation of photoluminescence also pumps the color center, via a two-photon process, into a dark state, where it becomes trapped. Repumping back into the bright state has a step-like spectrum with a defect-dependent threshold between 2.25 and 2.6 eV. This behavior is consistent with photoionization and charging between optically bright and dark states of the defect. Furthermore, a second zero phonon line, detuned by +0.4 eV, is observed in absorption with orthogonal polarization to the emission, evidencing an additional energy level in the color center.
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Affiliation(s)
- Prince Khatri
- College
of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter, EX4 4QF, United Kingdom
| | - Andrew J. Ramsay
- Hitachi
Cambridge Laboratory, Hitachi Europe Limited, Cambridge, CB3 0HE, United Kingdom
| | - Ralph Nicholas
Edward Malein
- College
of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter, EX4 4QF, United Kingdom
| | - Harold M. H. Chong
- Sustainable
Electronics Technology Group, School of Electronics and Computer Science, University of Southampton, Southampton SO17 1BJ, United Kingdom
| | - Isaac J. Luxmoore
- College
of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter, EX4 4QF, United Kingdom
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31
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Castelletto S, Inam FA, Sato SI, Boretti A. Hexagonal boron nitride: a review of the emerging material platform for single-photon sources and the spin-photon interface. BEILSTEIN JOURNAL OF NANOTECHNOLOGY 2020; 11:740-769. [PMID: 32461875 PMCID: PMC7214868 DOI: 10.3762/bjnano.11.61] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/09/2020] [Accepted: 04/16/2020] [Indexed: 05/09/2023]
Abstract
Single-photon sources and their optical spin readout are at the core of applications in quantum communication, quantum computation, and quantum sensing. Their integration in photonic structures such as photonic crystals, microdisks, microring resonators, and nanopillars is essential for their deployment in quantum technologies. While there are currently only two material platforms (diamond and silicon carbide) with proven single-photon emission from the visible to infrared, a quantum spin-photon interface, and ancilla qubits, it is expected that other material platforms could emerge with similar characteristics in the near future. These two materials also naturally lead to monolithic integrated photonics as both are good photonic materials. While so far the verification of single-photon sources was based on discovery, assignment and then assessment and control of their quantum properties for applications, a better approach could be to identify applications and then search for the material that could address the requirements of the application in terms of quantum properties of the defects. This approach is quite difficult as it is based mostly on the reliability of modeling and predicting of color center properties in various materials, and their experimental verification is challenging. In this paper, we review some recent advances in an emerging material, low-dimensional (2D, 1D, 0D) hexagonal boron nitride (h-BN), which could lead to establishing such a platform. We highlight the recent achievements of the specific material for the expected applications in quantum technologies, indicating complementary outstanding properties compared to the other 3D bulk materials.
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Affiliation(s)
| | - Faraz A Inam
- Dept. of Physics, Aligarh Muslim University, Aligarh, U.P. 202002, India
| | - Shin-ichiro Sato
- National Institutes for Quantum and Radiological Science and Technology, Takasaki, Gunma, 370-1292, Japan
| | - Alberto Boretti
- Mechanical Engineering Department, College of Engineering, Prince Mohammad Bin Fahd University, Al Khobar 31952, Kingdom of Saudi Arabia
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32
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Gottscholl A, Kianinia M, Soltamov V, Orlinskii S, Mamin G, Bradac C, Kasper C, Krambrock K, Sperlich A, Toth M, Aharonovich I, Dyakonov V. Initialization and read-out of intrinsic spin defects in a van der Waals crystal at room temperature. NATURE MATERIALS 2020; 19:540-545. [PMID: 32094496 DOI: 10.1038/s41563-020-0619-6] [Citation(s) in RCA: 128] [Impact Index Per Article: 32.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/09/2019] [Accepted: 01/20/2020] [Indexed: 05/22/2023]
Abstract
Optically addressable spins in wide-bandgap semiconductors are a promising platform for exploring quantum phenomena. While colour centres in three-dimensional crystals such as diamond and silicon carbide were studied in detail, they were not observed experimentally in two-dimensional (2D) materials. Here, we report spin-dependent processes in the 2D material hexagonal boron nitride (hBN). We identify fluorescence lines associated with a particular defect, the negatively charged boron vacancy ([Formula: see text]), showing a triplet (S = 1) ground state and zero-field splitting of ~3.5 GHz. We establish that this centre exhibits optically detected magnetic resonance at room temperature and demonstrate its spin polarization under optical pumping, which leads to optically induced population inversion of the spin ground state-a prerequisite for coherent spin-manipulation schemes. Our results constitute a step forward in establishing 2D hBN as a prime platform for scalable quantum technologies, with potential for spin-based quantum information and sensing applications.
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Affiliation(s)
- Andreas Gottscholl
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence, Julius Maximilian University of Würzburg, Würzburg, Germany
| | - Mehran Kianinia
- School of Mathematics and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, Australia
| | - Victor Soltamov
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence, Julius Maximilian University of Würzburg, Würzburg, Germany
| | | | | | - Carlo Bradac
- School of Mathematics and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, Australia
| | - Christian Kasper
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence, Julius Maximilian University of Würzburg, Würzburg, Germany
| | - Klaus Krambrock
- Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, Brazil
| | - Andreas Sperlich
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence, Julius Maximilian University of Würzburg, Würzburg, Germany
| | - Milos Toth
- School of Mathematics and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, University of Technology Sydney, Ultimo, New South Wales, Australia
| | - Igor Aharonovich
- School of Mathematics and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, Australia.
- ARC Centre of Excellence for Transformative Meta-Optical Systems, University of Technology Sydney, Ultimo, New South Wales, Australia.
| | - Vladimir Dyakonov
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence, Julius Maximilian University of Würzburg, Würzburg, Germany.
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33
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Sajid A, Ford MJ, Reimers JR. Single-photon emitters in hexagonal boron nitride: a review of progress. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2020; 83:044501. [PMID: 31846956 DOI: 10.1088/1361-6633/ab6310] [Citation(s) in RCA: 41] [Impact Index Per Article: 10.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
This report summarizes progress made in understanding properties such as zero-phonon-line energies, emission and absorption polarizations, electron-phonon couplings, strain tuning and hyperfine coupling of single photon emitters in hexagonal boron nitride. The primary aims of this research are to discover the chemical nature of the emitting centres and to facilitate deployment in device applications. Critical analyses of the experimental literature and data interpretation, as well as theoretical approaches used to predict properties, are made. In particular, computational and theoretical limitations and challenges are discussed, with a range of suggestions made to overcome these limitations, striving to achieve realistic predictions concerning the nature of emitting centers. A symbiotic relationship is required in which calculations focus on properties that can easily be measured, whilst experiments deliver results in a form facilitating mass-produced calculations.
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Affiliation(s)
- A Sajid
- University of Technology Sydney, School of Mathematical and Physical Sciences, Ultimo, New South Wales 2007, Australia. CAMD, Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark. Department of Physics, GC University Faisalabad, Allama Iqbal Road, 38000 Faisalabad, Pakistan. Author to whom any correspondence should be addressed
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34
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Boll MK, Radko IP, Huck A, Andersen UL. Photophysics of quantum emitters in hexagonal boron-nitride nano-flakes. OPTICS EXPRESS 2020; 28:7475-7487. [PMID: 32225974 DOI: 10.1364/oe.386629] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/26/2019] [Accepted: 02/18/2020] [Indexed: 06/10/2023]
Abstract
Quantum emitters in hexagonal boron nitride (hBN) have attracted significant interest due to their bright and narrowband photon emission even at room temperature. The wide-bandgap two-dimensional material incorporates crystal defects of yet-unknown configuration, introducing discrete energy levels with radiative transition frequencies in the visible spectral range. The commonly observed high brightness together with the moderate fluorescence lifetime indicates a high quantum efficiency, but the exact dynamics and the underlying energy level structure remain elusive. In this study we present a systematic and detailed analysis of the photon statistics recorded for several individual emitters. We extract the individual decay rates by modeling the second-order correlation functions using a set of rate equations based on an energy level scheme involving long-lived states. Our analysis clearly indicates excitation-power-dependent non-radiative couplings to at least two metastable levels and confirms a near unity quantum efficiency.
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Shi Z, Wang X, Li Q, Yang P, Lu G, Jiang R, Wang H, Zhang C, Cong C, Liu Z, Wu T, Wang H, Yu Q, Xie X. Vapor-liquid-solid growth of large-area multilayer hexagonal boron nitride on dielectric substrates. Nat Commun 2020; 11:849. [PMID: 32051410 PMCID: PMC7015929 DOI: 10.1038/s41467-020-14596-3] [Citation(s) in RCA: 29] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/18/2019] [Accepted: 01/22/2020] [Indexed: 12/20/2022] Open
Abstract
Multilayer hexagonal boron nitride (h-BN) is highly desirable as a dielectric substrate for the fabrication of two-dimensional (2D) electronic and optoelectronic devices. However, the controllable synthesis of multilayer h-BN in large areas is still limited in terms of crystallinity, thickness and stacking order. Here, we report a vapor–liquid–solid growth (VLSG) method to achieve uniform multilayer h-BN by using a molten Fe82B18 alloy and N2 as reactants. Liquid Fe82B18 not only supplies boron but also continuously dissociates nitrogen atoms from the N2 vapor to support direct h-BN growth on a sapphire substrate; therefore, the VLSG method delivers high-quality h-BN multilayers with a controllable thickness. Further investigation of the phase evolution of the Fe-B-N system reveals that isothermal segregation dominates the growth of the h-BN. The approach herein demonstrates the feasibility for large-area fabrication of van der Waals 2D materials and heterostructures. Multilayer hexagonal boron nitride (hBN) is a desirable dielectric substrate for 2D electronics but its controllable synthesis is challenging. Here, the authors report a vapor–liquid–solid growth method to achieve uniform multilayer hBN by using a molten Fe82B18 alloy and N2 as reactants.
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Affiliation(s)
- Zhiyuan Shi
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, China.,School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, 19A Yuquan Road, Beijing, 100049, China.,CAS Center for Excellence in Superconducting Electronics (CENSE), 865 Changning Road, Shanghai, 200050, China
| | - Xiujun Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, China.,School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, 19A Yuquan Road, Beijing, 100049, China.,CAS Center for Excellence in Superconducting Electronics (CENSE), 865 Changning Road, Shanghai, 200050, China
| | - Qingtian Li
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, China.,School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, 19A Yuquan Road, Beijing, 100049, China.,CAS Center for Excellence in Superconducting Electronics (CENSE), 865 Changning Road, Shanghai, 200050, China
| | - Peng Yang
- State Key Laboratory of ASIC and System, School of Information Science and Technology, Fudan University, 220 Handan Road, Shanghai, 200433, China
| | - Guangyuan Lu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, China.,CAS Center for Excellence in Superconducting Electronics (CENSE), 865 Changning Road, Shanghai, 200050, China
| | - Ren Jiang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, China.,State Key Laboratory of Precision Spectroscopy, School of Physics and Material Science, East China Normal University, 3663N. Zhongshan Road, Shanghai, 200062, China
| | - Huishan Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, China.,School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, 19A Yuquan Road, Beijing, 100049, China.,CAS Center for Excellence in Superconducting Electronics (CENSE), 865 Changning Road, Shanghai, 200050, China
| | - Chao Zhang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, China.,School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, 19A Yuquan Road, Beijing, 100049, China.,CAS Center for Excellence in Superconducting Electronics (CENSE), 865 Changning Road, Shanghai, 200050, China
| | - Chunxiao Cong
- State Key Laboratory of ASIC and System, School of Information Science and Technology, Fudan University, 220 Handan Road, Shanghai, 200433, China
| | - Zhi Liu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, China.,CAS Center for Excellence in Superconducting Electronics (CENSE), 865 Changning Road, Shanghai, 200050, China.,School of Physical Science and Technology, ShanghaiTech University, 319 Yueyang Road, Shanghai, 200031, China
| | - Tianru Wu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, China. .,CAS Center for Excellence in Superconducting Electronics (CENSE), 865 Changning Road, Shanghai, 200050, China.
| | - Haomin Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, China. .,CAS Center for Excellence in Superconducting Electronics (CENSE), 865 Changning Road, Shanghai, 200050, China.
| | - Qingkai Yu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, China.,CAS Center for Excellence in Superconducting Electronics (CENSE), 865 Changning Road, Shanghai, 200050, China
| | - Xiaoming Xie
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, China.,School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, 19A Yuquan Road, Beijing, 100049, China.,CAS Center for Excellence in Superconducting Electronics (CENSE), 865 Changning Road, Shanghai, 200050, China.,School of Physical Science and Technology, ShanghaiTech University, 319 Yueyang Road, Shanghai, 200031, China
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36
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Vogl T, Doherty MW, Buchler BC, Lu Y, Lam PK. Atomic localization of quantum emitters in multilayer hexagonal boron nitride. NANOSCALE 2019; 11:14362-14371. [PMID: 31332410 DOI: 10.1039/c9nr04269e] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
The recent discovery of single-photon emitting defects hosted by the two-dimensional wide band gap semiconductor hexagonal boron nitride (hBN) has inspired a great number of experiments. Key characteristics of these quantum emitters are their capability to operate at room temperature with a high luminosity. In spite of large theoretical and experimental research efforts, the exact nature of the emission remains unresolved. In this work we utilize layer-by-layer etching of multilayer hBN to localize the quantum emitters with atomic precision. Our results suggest the position of the emitters correlates with the fabrication method: emitters formed under plasma treatment are always in close proximity to the crystal surface, while emitters created under electron irradiation are distributed randomly throughout the entire crystal. This disparity could be traced back to the lower kinetic energy of the ions in the plasma compared to the kinetic energy of the electrons in the particle accelerator. The emitter distance to the surface also correlates with the excited state lifetime: near-surface emitters have a shorter one compared to emitters deep within the crystal. Finite-difference time-domain and density functional theory simulations show that optical and electronic effects are not responsible for this difference, indicating effects such as coupling to surface defects or phonons might cause the reduced lifetime. Our results pave a way toward identification of the defect, as well as engineering the emitter properties.
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Affiliation(s)
- Tobias Vogl
- Centre for Quantum Computation and Communication Technology, Department of Quantum Science, Research School of Physics and Engineering, The Australian National University, Acton ACT 2601, Australia.
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37
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Li X, Scully RA, Shayan K, Luo Y, Strauf S. Near-Unity Light Collection Efficiency from Quantum Emitters in Boron Nitride by Coupling to Metallo-Dielectric Antennas. ACS NANO 2019; 13:6992-6997. [PMID: 31141657 DOI: 10.1021/acsnano.9b01996] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The bright and stable single-photon emission under room temperature conditions from color centers in hexagonal boron nitride (hBN) is considered as one of the most promising quantum light sources for quantum cryptography as well as spin-based qubits, similar to recent advances in nitrogen-vacancy centers in diamond. To this end, integration with cavity or waveguide modes is required to enable ideally lossless transduction of quantum light states. Here, we demonstrate a scheme to embed hBN quantum emitters into on-chip arrays of metallo-dielectric antennas that provides near unity light collection efficiencies with experimental values up to 98%, i.e. a 7-fold enhancement compared to bare quantum emitters. Room-temperature quantum light emission in the 700 nm band is characterized with single-photon emission rates into the first lens up to 44 MHz under continuous excitation and up to 10 MHz under 80 MHz pulsed excitation (0.13 photons per trigger pulse) into a narrow output cone (±15°) that facilitates fiber butt-coupling. We furthermore provide here a direct measurement of the quantum yield under pulsed excitation with values of 6-12% for hBN nanoflakes. Our demonstrated scheme could enable low loss spin-photon interfaces on a chip.
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Affiliation(s)
- Xiangzhi Li
- Department of Physics and Center for Quantum Science and Engineering , Stevens Institute of Technology , Hoboken , New Jersey 07030 , United States
| | - Robert A Scully
- Department of Physics and Center for Quantum Science and Engineering , Stevens Institute of Technology , Hoboken , New Jersey 07030 , United States
| | - Kamran Shayan
- Department of Physics and Center for Quantum Science and Engineering , Stevens Institute of Technology , Hoboken , New Jersey 07030 , United States
| | - Yue Luo
- Department of Physics and Center for Quantum Science and Engineering , Stevens Institute of Technology , Hoboken , New Jersey 07030 , United States
| | - Stefan Strauf
- Department of Physics and Center for Quantum Science and Engineering , Stevens Institute of Technology , Hoboken , New Jersey 07030 , United States
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38
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Stern HL, Wang R, Fan Y, Mizuta R, Stewart JC, Needham LM, Roberts TD, Wai R, Ginsberg NS, Klenerman D, Hofmann S, Lee SF. Spectrally Resolved Photodynamics of Individual Emitters in Large-Area Monolayers of Hexagonal Boron Nitride. ACS NANO 2019; 13:4538-4547. [PMID: 30865421 DOI: 10.1021/acsnano.9b00274] [Citation(s) in RCA: 23] [Impact Index Per Article: 4.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Hexagonal boron nitride (h-BN) is a 2D, wide band gap semiconductor that has recently been shown to display bright room-temperature emission in the visible region, sparking immense interest in the material for use in quantum applications. In this work, we study highly crystalline, single atomic layers of chemical vapor deposition grown h-BN and find predominantly one type of emissive state. Using a multidimensional super-resolution fluorescence microscopy technique we simultaneously measure spatial position, intensity, and spectral properties of the emitters, as they are exposed to continuous wave illumination over minutes. As well as low emitter heterogeneity, we observe inhomogeneous broadening of emitter line-widths and power law dependency in fluorescence intermittency; this is strikingly similar to previous work on quantum dots. These results show that high control over h-BN growth and treatment can produce a narrow distribution of emitter type and that surface interactions heavily influence the photodynamics. Furthermore, we highlight the utility of spectrally resolved wide-field microscopy in the study of optically active excitations in atomically thin two-dimensional materials.
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Affiliation(s)
- Hannah L Stern
- Department of Chemistry , University of Cambridge , Lensfield Road , CB2 1EW , Cambridge , United Kingdom
| | - Ruizhi Wang
- Department of Engineering , University of Cambridge , JJ Thompson Avenue , CB3 0FA , Cambridge , United Kingdom
| | - Ye Fan
- Department of Engineering , University of Cambridge , JJ Thompson Avenue , CB3 0FA , Cambridge , United Kingdom
| | - Ryo Mizuta
- Department of Engineering , University of Cambridge , JJ Thompson Avenue , CB3 0FA , Cambridge , United Kingdom
| | - James C Stewart
- Department of Engineering , University of Cambridge , JJ Thompson Avenue , CB3 0FA , Cambridge , United Kingdom
| | - Lisa-Maria Needham
- Department of Chemistry , University of Cambridge , Lensfield Road , CB2 1EW , Cambridge , United Kingdom
| | - Trevor D Roberts
- Department of Chemistry , University of California , Berkeley , California 94720 , United States
| | - Rebecca Wai
- Department of Chemistry , University of California , Berkeley , California 94720 , United States
| | - Naomi S Ginsberg
- Department of Chemistry , University of California , Berkeley , California 94720 , United States
- Department of Physics and Department of Chemistry , University of California , Berkeley , California 94720 , United States
- Molecular Biophysics and Integrated Bioimaging Division and Materials Sciences Division , Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States
- Kavli Energy NanoSciences Institute , Berkeley , California 94720 , United States
| | - David Klenerman
- Department of Chemistry , University of Cambridge , Lensfield Road , CB2 1EW , Cambridge , United Kingdom
| | - Stephan Hofmann
- Department of Engineering , University of Cambridge , JJ Thompson Avenue , CB3 0FA , Cambridge , United Kingdom
| | - Steven F Lee
- Department of Chemistry , University of Cambridge , Lensfield Road , CB2 1EW , Cambridge , United Kingdom
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39
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Mendelson N, Xu ZQ, Tran TT, Kianinia M, Scott J, Bradac C, Aharonovich I, Toth M. Engineering and Tuning of Quantum Emitters in Few-Layer Hexagonal Boron Nitride. ACS NANO 2019; 13:3132-3140. [PMID: 30715854 DOI: 10.1021/acsnano.8b08511] [Citation(s) in RCA: 47] [Impact Index Per Article: 9.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
Quantum technologies require robust and photostable single photon emitters (SPEs). Hexagonal boron nitride (hBN) has recently emerged as a promising candidate to host bright and optically stable SPEs operating at room temperature. However, the emission wavelength of the fluorescent defects in hBN has, to date, been shown to be uncontrolled, with a widespread of zero phonon line (ZPL) energies spanning a broad spectral range (hundreds of nanometers), which hinders the potential development of hBN-based devices and applications. Here we demonstrate chemical vapor deposition growth of large-area, few-layer hBN films that host large quantities of SPEs: ∼100-200 per 10 × 10 μm2. More than 85% of the emitters have a ZPL at (580 ± 10) nm, a distribution that is an order of magnitude narrower than reported previously. Furthermore, we demonstrate tuning of the ZPL wavelength using ionic liquid devices over a spectral range of up to 15 nm-the largest obtained to date from any solid-state SPE. The fabricated devices illustrate the potential of hBN for the development of hybrid quantum nanophotonic and optoelectronic devices based on two-dimensional materials.
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Affiliation(s)
- Noah Mendelson
- Institute of Biomedical Materials and Devices, Faculty of Science , University of Technology Sydney , Ultimo , New South Wales 2007 , Australia
| | - Zai-Quan Xu
- Institute of Biomedical Materials and Devices, Faculty of Science , University of Technology Sydney , Ultimo , New South Wales 2007 , Australia
| | - Toan Trong Tran
- Institute of Biomedical Materials and Devices, Faculty of Science , University of Technology Sydney , Ultimo , New South Wales 2007 , Australia
| | - Mehran Kianinia
- Institute of Biomedical Materials and Devices, Faculty of Science , University of Technology Sydney , Ultimo , New South Wales 2007 , Australia
| | - John Scott
- Institute of Biomedical Materials and Devices, Faculty of Science , University of Technology Sydney , Ultimo , New South Wales 2007 , Australia
| | - Carlo Bradac
- Institute of Biomedical Materials and Devices, Faculty of Science , University of Technology Sydney , Ultimo , New South Wales 2007 , Australia
| | - Igor Aharonovich
- Institute of Biomedical Materials and Devices, Faculty of Science , University of Technology Sydney , Ultimo , New South Wales 2007 , Australia
| | - Milos Toth
- Institute of Biomedical Materials and Devices, Faculty of Science , University of Technology Sydney , Ultimo , New South Wales 2007 , Australia
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40
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Ziegler J, Klaiss R, Blaikie A, Miller D, Horowitz VR, Alemán BJ. Deterministic Quantum Emitter Formation in Hexagonal Boron Nitride via Controlled Edge Creation. NANO LETTERS 2019; 19:2121-2127. [PMID: 30768282 DOI: 10.1021/acs.nanolett.9b00357] [Citation(s) in RCA: 45] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
Quantum emitters (QEs) in 2D hexagonal boron nitride (hBN) are extremely bright and are stable at high temperature and under harsh chemical conditions. Because they reside within an atomically thin 2D material, these QEs have a unique potential to couple strongly to hybrid optoelectromechanical and quantum devices. However, this potential for coupling has been underexplored because of challenges in nanofabrication and patterning of hBN QEs. Motivated by recent studies showing that QEs in hBN tend to form at edges, we use a focused ion beam (FIB) to mill an array of patterned holes into hBN. Using optical confocal microscopy, we find arrays of bright, localized photoluminescence that match the geometry of the patterned holes. Furthermore, second-order photon correlation measurements on these bright spots reveal that they contain single and multiple QEs. By optimizing the FIB parameters, we create patterned single QEs with a yield of 31%, a value close to Poissonian limit. Using atomic force microscopy to study the morphology near emission sites, we find that single QE yield is highest with smoothly milled holes on unwrinkled hBN. This technique dramatically broadens the utility and convenience of hBN QEs and achieves a vital step toward the facile integration of the QEs into large-scale photonic, plasmonic, nanomechanical, or optoelectronic devices.
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Affiliation(s)
- Joshua Ziegler
- Department of Physics; Material Science Institute; Center for Optical, Molecular, and Quantum Science , University of Oregon , Eugene , Oregon 97403 , United States
| | - Rachael Klaiss
- Department of Physics; Material Science Institute; Center for Optical, Molecular, and Quantum Science , University of Oregon , Eugene , Oregon 97403 , United States
| | - Andrew Blaikie
- Department of Physics; Material Science Institute; Center for Optical, Molecular, and Quantum Science , University of Oregon , Eugene , Oregon 97403 , United States
| | - David Miller
- Department of Physics; Material Science Institute; Center for Optical, Molecular, and Quantum Science , University of Oregon , Eugene , Oregon 97403 , United States
| | - Viva R Horowitz
- Department of Physics , Hamilton College , Clinton , New York 13323 , United States
| | - Benjamín J Alemán
- Department of Physics; Material Science Institute; Center for Optical, Molecular, and Quantum Science , University of Oregon , Eugene , Oregon 97403 , United States
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Abstract
Layered materials are very attractive for studies of light-matter interactions at the nanoscale. In particular, isolated quantum systems such as color centers and quantum dots embedded in these materials are gaining interest due to their potential use in a variety of quantum technologies and nanophotonics. Here, we review the field of nonclassical light emission from van der Waals crystals and atomically thin two-dimensional materials. We focus on transition metal dichalcogenides and hexagonal boron nitride and discuss the fabrication and properties of quantum emitters in these systems and proof-of-concept experiments that provide a foundation for their integration in on-chip nanophotonic circuits. These experiments include tuning of the emission wavelength, electrical excitation, and coupling of the emitters to waveguides, dielectric cavities, and plasmonic resonators. Finally, we discuss current challenges in the field and provide an outlook to further stimulate scientific discussion.
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Affiliation(s)
- Milos Toth
- Institute of Biomedical Materials and Devices, University of Technology Sydney, Ultimo, New South Wales 2007, Australia; ,
| | - Igor Aharonovich
- Institute of Biomedical Materials and Devices, University of Technology Sydney, Ultimo, New South Wales 2007, Australia; ,
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42
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Magnetic-field-dependent quantum emission in hexagonal boron nitride at room temperature. Nat Commun 2019; 10:222. [PMID: 30644413 PMCID: PMC6333818 DOI: 10.1038/s41467-018-08185-8] [Citation(s) in RCA: 59] [Impact Index Per Article: 11.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/07/2018] [Accepted: 12/17/2018] [Indexed: 12/24/2022] Open
Abstract
Optically addressable spins associated with defects in wide-bandgap semiconductors are versatile platforms for quantum information processing and nanoscale sensing, where spin-dependent inter-system crossing transitions facilitate optical spin initialization and readout. Recently, the van der Waals material hexagonal boron nitride (h-BN) has emerged as a robust host for quantum emitters, promising efficient photon extraction and atom-scale engineering, but observations of spin-related effects have remained thus far elusive. Here, we report room-temperature observations of strongly anisotropic photoluminescence patterns as a function of applied magnetic field for select quantum emitters in h-BN. Field-dependent variations in the steady-state photoluminescence and photon emission statistics are consistent with an electronic model featuring a spin-dependent inter-system crossing between triplet and singlet manifolds, indicating that optically-addressable spin defects are present in h-BN.
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43
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Shi Z, Lu G, Yang P, Wu T, Yin W, Zhang C, Jiang R, Xie X. Controlled synthesis of uniform multilayer hexagonal boron nitride films on Fe2B alloy. RSC Adv 2019; 9:10155-10158. [PMID: 35520910 PMCID: PMC9062396 DOI: 10.1039/c9ra00595a] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/23/2019] [Accepted: 03/26/2019] [Indexed: 12/01/2022] Open
Abstract
Two-dimensional (2D) hexagonal boron nitride (h-BN) is highly appreciated for its excellent insulating performance and absence of dangling bonds, which could be employed to maintain the intrinsic properties of 2D materials. However, controllable synthesis of large scale multilayer h-BN is still very challenging. Here, we demonstrate chemical vapor deposition (CVD) growth of multilayer h-BN by using iron boride (Fe2B) alloy and nitrogen (N2) as precursors. Different from the self-limited growth mechanism of monolayer h-BN on catalytic metal surfaces, with sufficient B source in the bulk, Fe2B alloy promotes the controllable isothermal segregation of multilayer h-BN by reacting with active N atoms on the surface of the substrate. Microscopic and spectroscopic characterizations prove the high uniformity and crystalline quality of h-BN with a highly orientated layered lattice structure. The achievement of large scale multilayer h-BN in this work would facilitate its applications in 2D electronics and optoelectronics in the future. CVD growth of large scale and high quality multilayer h-BN.![]()
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Affiliation(s)
- Zhiyuan Shi
- State Key Laboratory of Functional Materials for Informatics
- Shanghai Institute of Microsystem and Information Technology
- Chinese Academy of Sciences
- Shanghai 200050
- China
| | - Guangyuan Lu
- State Key Laboratory of Functional Materials for Informatics
- Shanghai Institute of Microsystem and Information Technology
- Chinese Academy of Sciences
- Shanghai 200050
- China
| | - Peng Yang
- State Key Laboratory of ASIC and System
- School of Information Science and Technology
- Fudan University
- Shanghai 200433
- China
| | - Tianru Wu
- State Key Laboratory of Functional Materials for Informatics
- Shanghai Institute of Microsystem and Information Technology
- Chinese Academy of Sciences
- Shanghai 200050
- China
| | - Weijun Yin
- State Key Laboratory of Functional Materials for Informatics
- Shanghai Institute of Microsystem and Information Technology
- Chinese Academy of Sciences
- Shanghai 200050
- China
| | - Chao Zhang
- State Key Laboratory of Functional Materials for Informatics
- Shanghai Institute of Microsystem and Information Technology
- Chinese Academy of Sciences
- Shanghai 200050
- China
| | - Ren Jiang
- State Key Laboratory of Functional Materials for Informatics
- Shanghai Institute of Microsystem and Information Technology
- Chinese Academy of Sciences
- Shanghai 200050
- China
| | - Xiaoming Xie
- State Key Laboratory of Functional Materials for Informatics
- Shanghai Institute of Microsystem and Information Technology
- Chinese Academy of Sciences
- Shanghai 200050
- China
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44
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Wang Q, Zhang Q, Zhao X, Luo X, Wong CPY, Wang J, Wan D, Venkatesan T, Pennycook SJ, Loh KP, Eda G, Wee ATS. Photoluminescence Upconversion by Defects in Hexagonal Boron Nitride. NANO LETTERS 2018; 18:6898-6905. [PMID: 30260651 DOI: 10.1021/acs.nanolett.8b02804] [Citation(s) in RCA: 36] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
Hexagonal boron nitride (h-BN) was recently reported to display single photon emission from ultraviolet to near-infrared range due to the existence of defects. Single photon emission has potential applications in quantum information processing and optoelectronics. These findings trigger increasing research interests in h-BN defects, such as revealing the nature of the defects. Here, we report another intriguing defect property in h-BN, namely photoluminescence (PL) upconversion (anti-Stokes process). The energy gain by the PL upconversion is about 162 meV. The anomalous PL upconversion is attributed to optical phonon absorption in the one-photon excitation process, based on excitation power, excitation wavelength, and temperature-dependence investigations. Possible constitutions of the defects are discussed from the results of scanning transmission electron microscopy (STEM) studies and theoretical calculations. These findings show that defects in h-BN exhibit strong defect-phonon coupling. The results from STEM and theoretical calculations are beneficial for understanding the constitution of the h-BN defects.
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Affiliation(s)
- Qixing Wang
- Department of Physics , National University of Singapore , 2 Science Drive 3 , Singapore 117542 , Singapore
| | - Qi Zhang
- Department of Physics , National University of Singapore , 2 Science Drive 3 , Singapore 117542 , Singapore
| | - Xiaoxu Zhao
- Department of Chemistry , National University of Singapore , 3 Science Drive 3 , 117543 , Singapore
- Centre for Advanced 2D Materials , National University of Singapore , Block S14, 6 Science Drive 2 , Singapore 117546 , Singapore
- NUS Graduate School for Integrative Sciences and Engineering , National University of Singapore , 13 Centre for Life Sciences, #05-01, 28 Medical Drive , Singapore 117456 , Singapore
| | - Xin Luo
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics , Sun Yat-sen University , Guangzhou 510275 , Guangdong , People's Republic of China
- Department of Applied Physics , the Hong Kong Polytechnic University , Hung Hom, Kowloon, Hong Kong , People's Republic of China
| | - Calvin Pei Yu Wong
- Department of Physics , National University of Singapore , 2 Science Drive 3 , Singapore 117542 , Singapore
- NUS Graduate School for Integrative Sciences and Engineering , National University of Singapore , 13 Centre for Life Sciences, #05-01, 28 Medical Drive , Singapore 117456 , Singapore
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR) , 2 Fusionopolis Way, Innovis #08-03 , Singapore 138634 , Singapore
| | - Junyong Wang
- Department of Physics , National University of Singapore , 2 Science Drive 3 , Singapore 117542 , Singapore
| | - Dongyang Wan
- NUSNNI-NanoCore , National University of Singapore , 117411 , Singapore
| | - T Venkatesan
- Department of Physics , National University of Singapore , 2 Science Drive 3 , Singapore 117542 , Singapore
- NUS Graduate School for Integrative Sciences and Engineering , National University of Singapore , 13 Centre for Life Sciences, #05-01, 28 Medical Drive , Singapore 117456 , Singapore
- NUSNNI-NanoCore , National University of Singapore , 117411 , Singapore
- Department of Materials Science & Engineering , National University of Singapore , 9 Engineering Drive 1 , Singapore 117575 , Singapore
- Department of Electrical and Computer Engineering , National University of Singapore , 9 Engineering Drive 1 , 117575 , Singapore
| | - Stephen J Pennycook
- Department of Physics , National University of Singapore , 2 Science Drive 3 , Singapore 117542 , Singapore
- NUS Graduate School for Integrative Sciences and Engineering , National University of Singapore , 13 Centre for Life Sciences, #05-01, 28 Medical Drive , Singapore 117456 , Singapore
- NUSNNI-NanoCore , National University of Singapore , 117411 , Singapore
- Department of Materials Science & Engineering , National University of Singapore , 9 Engineering Drive 1 , Singapore 117575 , Singapore
| | - Kian Ping Loh
- Department of Chemistry , National University of Singapore , 3 Science Drive 3 , 117543 , Singapore
- Centre for Advanced 2D Materials , National University of Singapore , Block S14, 6 Science Drive 2 , Singapore 117546 , Singapore
| | - Goki Eda
- Department of Physics , National University of Singapore , 2 Science Drive 3 , Singapore 117542 , Singapore
- Department of Chemistry , National University of Singapore , 3 Science Drive 3 , 117543 , Singapore
- Centre for Advanced 2D Materials , National University of Singapore , Block S14, 6 Science Drive 2 , Singapore 117546 , Singapore
| | - Andrew T S Wee
- Department of Physics , National University of Singapore , 2 Science Drive 3 , Singapore 117542 , Singapore
- Centre for Advanced 2D Materials , National University of Singapore , Block S14, 6 Science Drive 2 , Singapore 117546 , Singapore
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45
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Zhao S, Lavie J, Rondin L, Orcin-Chaix L, Diederichs C, Roussignol P, Chassagneux Y, Voisin C, Müllen K, Narita A, Campidelli S, Lauret JS. Single photon emission from graphene quantum dots at room temperature. Nat Commun 2018; 9:3470. [PMID: 30150689 PMCID: PMC6110725 DOI: 10.1038/s41467-018-05888-w] [Citation(s) in RCA: 47] [Impact Index Per Article: 7.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/26/2018] [Accepted: 08/01/2018] [Indexed: 11/23/2022] Open
Abstract
Graphene being a zero-gap material, considerable efforts have been made to develop semiconductors whose structure is compatible with its hexagonal lattice. Size reduction is a promising way to achieve this objective. The reduction of both dimensions of graphene leads to graphene quantum dots. Here, we report on a single-emitter study that directly addresses the intrinsic emission properties of graphene quantum dots. In particular, we show that they are efficient and stable single-photon emitters at room temperature and that their emission wavelength can be modified through the functionalization of their edges. Finally, the investigation of the intersystem crossing shows that the short triplet lifetime and the low crossing yield are in agreement with the high brightness of these quantum emitters. These results represent a step-forward in performing chemistry engineering for the design of quantum emitters.
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Affiliation(s)
- Shen Zhao
- Laboratoire Aimé Cotton, CNRS, Univ. Paris-Sud, ENS Cachan, Université Paris-Saclay, bat 505 campus d'Orsay, 91405, Orsay cedex, France
| | - Julien Lavie
- LICSEN, NIMBE, CEA, CNRS, Université Paris-Saclay, Gif sur Yvette, 91191, France
| | - Loïc Rondin
- Laboratoire Aimé Cotton, CNRS, Univ. Paris-Sud, ENS Cachan, Université Paris-Saclay, bat 505 campus d'Orsay, 91405, Orsay cedex, France
| | - Lucile Orcin-Chaix
- Laboratoire Aimé Cotton, CNRS, Univ. Paris-Sud, ENS Cachan, Université Paris-Saclay, bat 505 campus d'Orsay, 91405, Orsay cedex, France
- LICSEN, NIMBE, CEA, CNRS, Université Paris-Saclay, Gif sur Yvette, 91191, France
| | - Carole Diederichs
- Laboratoire Pierre Aigrain, Département de physique de l'ENS, École normale supérieure, Université Paris Diderot, Sorbonne Paris Cité, Sorbonne Université, CNRS, PSL University, 75005, Paris, France
| | - Philippe Roussignol
- Laboratoire Pierre Aigrain, Département de physique de l'ENS, École normale supérieure, Université Paris Diderot, Sorbonne Paris Cité, Sorbonne Université, CNRS, PSL University, 75005, Paris, France
| | - Yannick Chassagneux
- Laboratoire Pierre Aigrain, Département de physique de l'ENS, École normale supérieure, Université Paris Diderot, Sorbonne Paris Cité, Sorbonne Université, CNRS, PSL University, 75005, Paris, France
| | - Christophe Voisin
- Laboratoire Pierre Aigrain, Département de physique de l'ENS, École normale supérieure, Université Paris Diderot, Sorbonne Paris Cité, Sorbonne Université, CNRS, PSL University, 75005, Paris, France
| | - Klaus Müllen
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128, Mainz, Germany
| | - Akimitsu Narita
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128, Mainz, Germany
| | - Stéphane Campidelli
- LICSEN, NIMBE, CEA, CNRS, Université Paris-Saclay, Gif sur Yvette, 91191, France
| | - Jean-Sébastien Lauret
- Laboratoire Aimé Cotton, CNRS, Univ. Paris-Sud, ENS Cachan, Université Paris-Saclay, bat 505 campus d'Orsay, 91405, Orsay cedex, France.
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46
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Ahn J, Xu Z, Bang J, Allcca AEL, Chen YP, Li T. Stable emission and fast optical modulation of quantum emitters in boron nitride nanotubes. OPTICS LETTERS 2018; 43:3778-3781. [PMID: 30067678 DOI: 10.1364/ol.43.003778] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
Atom-like defects in two-dimensional (2D) hexagonal boron nitride (hBN) have recently emerged as a promising platform for quantum information science. Here, we investigate single-photon emissions from atomic defects in boron nitride nanotubes (BNNTs). We demonstrate the first, to the best of our knowledge, optical modulation of the quantum emission from BNNTs with a near-infrared laser. This one-dimensional system displays a bright single-photon emission, as well as high stability at room temperature, and is an excellent candidate for optomechanics. The fast optical modulation of a single-photon emission shows multiple electronic levels of the system and has potential applications in optical signal processing.
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47
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Ngoc My Duong H, Nguyen MAP, Kianinia M, Ohshima T, Abe H, Watanabe K, Taniguchi T, Edgar JH, Aharonovich I, Toth M. Effects of High-Energy Electron Irradiation on Quantum Emitters in Hexagonal Boron Nitride. ACS APPLIED MATERIALS & INTERFACES 2018; 10:24886-24891. [PMID: 29882642 DOI: 10.1021/acsami.8b07506] [Citation(s) in RCA: 30] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
Hexagonal boron nitride (hBN) mono and multilayers are promising hosts for room-temperature single photon emitters (SPEs). In this work we explore high-energy (∼MeV) electron irradiation as a means to generate stable SPEs in hBN. We investigate four types of exfoliated hBN flakes-namely, high-purity multilayers, isotopically pure hBN, carbon-rich hBN multilayers and monolayered material-and find that electron irradiation increases emitter concentrations dramatically in all samples. Furthermore, the engineered emitters are located throughout hBN flakes (not only at flake edges or grain boundaries) and do not require activation by high-temperature annealing of the host material after electron exposure. Our results provide important insights into controlled formation of hBN SPEs and may aid in identification of their crystallographic origin.
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Affiliation(s)
- Hanh Ngoc My Duong
- School of Mathematical and Physical Sciences , University of Technology Sydney , Ultimo , New South Wales 2007 , Australia
| | - Minh Anh Phan Nguyen
- School of Mathematical and Physical Sciences , University of Technology Sydney , Ultimo , New South Wales 2007 , Australia
| | - Mehran Kianinia
- School of Mathematical and Physical Sciences , University of Technology Sydney , Ultimo , New South Wales 2007 , Australia
| | - Takeshi Ohshima
- National Institutes for Quantum and Radiological Science and Technology , 1233 Watanuki , Takasaki , Gunma 370-1292 , Japan
| | - Hiroshi Abe
- National Institutes for Quantum and Radiological Science and Technology , 1233 Watanuki , Takasaki , Gunma 370-1292 , Japan
| | - Kenji Watanabe
- National Institute for Materials Science , 1-1 Namiki , Tsukuba , Ibaraki 305-0044 Japan
| | - Takashi Taniguchi
- National Institute for Materials Science , 1-1 Namiki , Tsukuba , Ibaraki 305-0044 Japan
| | - James H Edgar
- Department of Chemical Engineering, Durland Hall , Kansas State University , Manhattan , Kansas 66506 , United States
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences , University of Technology Sydney , Ultimo , New South Wales 2007 , Australia
| | - Milos Toth
- School of Mathematical and Physical Sciences , University of Technology Sydney , Ultimo , New South Wales 2007 , Australia
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48
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Xue Y, Wang H, Tan Q, Zhang J, Yu T, Ding K, Jiang D, Dou X, Shi JJ, Sun BQ. Anomalous Pressure Characteristics of Defects in Hexagonal Boron Nitride Flakes. ACS NANO 2018; 12:7127-7133. [PMID: 29957923 DOI: 10.1021/acsnano.8b02970] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
Research on hexagonal boron nitride (hBN) has been intensified recently due to the application of hBN as a promising system of single-photon emitters. To date, the single photon origin remains under debate even though many experiments and theoretical calculations have been performed. We have measured the pressure-dependent photoluminescence (PL) spectra of hBN flakes at low temperatures by using a diamond anvil cell device. The absolute values of the pressure coefficients of discrete PL emission lines are all below 15 meV/GPa, which is much lower than the pressure-induced 36 meV/GPa redshift rate of the hBN bandgap. These PL emission lines originate from atom-like localized defect levels confined within the bandgap of the hBN flakes. Interestingly, the experimental results of the pressure-dependent PL emission lines present three different types of pressure responses corresponding to a redshift (negative pressure coefficient), a blueshift (positive pressure coefficient), or even a sign change from negative to positive. Density functional theory calculations indicate the existence of competition between the intralayer and interlayer interaction contributions, which leads to the different pressure-dependent behaviors of the PL peak shift.
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Affiliation(s)
- Yongzhou Xue
- State Key Laboratory for Superlattices and Microstructures , Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083 , China
- College of Materials Science and Optoelectronic Technology , University of Chinese Academy of Sciences , Beijing 100049 , China
| | - Hui Wang
- State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics , Peking University , Beijing 100871 , China
| | - Qinghai Tan
- State Key Laboratory for Superlattices and Microstructures , Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083 , China
- College of Materials Science and Optoelectronic Technology , University of Chinese Academy of Sciences , Beijing 100049 , China
| | - Jun Zhang
- State Key Laboratory for Superlattices and Microstructures , Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083 , China
| | - Tongjun Yu
- State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics , Peking University , Beijing 100871 , China
| | - Kun Ding
- State Key Laboratory for Superlattices and Microstructures , Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083 , China
| | - Desheng Jiang
- State Key Laboratory for Superlattices and Microstructures , Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083 , China
| | - Xiuming Dou
- State Key Laboratory for Superlattices and Microstructures , Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083 , China
| | - Jun-Jie Shi
- State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics , Peking University , Beijing 100871 , China
| | - Bao-Quan Sun
- State Key Laboratory for Superlattices and Microstructures , Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083 , China
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49
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Xu ZQ, Elbadawi C, Tran TT, Kianinia M, Li X, Liu D, Hoffman TB, Nguyen M, Kim S, Edgar JH, Wu X, Song L, Ali S, Ford M, Toth M, Aharonovich I. Single photon emission from plasma treated 2D hexagonal boron nitride. NANOSCALE 2018; 10:7957-7965. [PMID: 29682653 DOI: 10.1039/c7nr08222c] [Citation(s) in RCA: 56] [Impact Index Per Article: 9.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
Artificial atomic systems in solids are becoming increasingly important building blocks in quantum information processing and scalable quantum nanophotonic networks. Amongst numerous candidates, 2D hexagonal boron nitride has recently emerged as a promising platform hosting single photon emitters. Here, we report a number of robust plasma and thermal annealing methods for fabrication of emitters in tape-exfoliated hexagonal boron nitride (hBN) crystals. A two-step process comprising Ar plasma etching and subsequent annealing in Ar is highly robust, and yields an eight-fold increase in the concentration of emitters in hBN. The initial plasma-etching step generates emitters that suffer from blinking and bleaching, whereas the two-step process yields emitters that are photostable at room temperature with emission wavelengths greater than ∼700 nm. Density functional theory modeling suggests that the emitters might be associated with defect complexes that contain oxygen. This is further confirmed by generating the emitters via annealing hBN in air. Our findings advance the present understanding of the structure of quantum emitters in hBN and enhance the nanofabrication toolkit needed to realize integrated quantum nanophotonic circuits.
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Affiliation(s)
- Zai-Quan Xu
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, 2007, New South Wales, Australia.
| | - Christopher Elbadawi
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, 2007, New South Wales, Australia.
| | - Toan Trong Tran
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, 2007, New South Wales, Australia.
| | - Mehran Kianinia
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, 2007, New South Wales, Australia.
| | - Xiuling Li
- School of Chemistry and Materials Sciences, CAS Key Lab of Materials for Energy Conversion, and CAS Center for Excellence in Nanoscience, Hefei National Laboratory of Physics at the Microscale, Synergetic Innovation of Quantum Information & Quantum Technology, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Daobin Liu
- School of Chemistry and Materials Sciences, CAS Key Lab of Materials for Energy Conversion, and CAS Center for Excellence in Nanoscience, Hefei National Laboratory of Physics at the Microscale, Synergetic Innovation of Quantum Information & Quantum Technology, University of Science and Technology of China, Hefei, Anhui 230026, China and National Synchrotron Radiation Laboratory, CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei, Anhui 230029, China
| | - Timothy B Hoffman
- Department of Chemical Engineering, Durland Hall, Kansas State University, Manhattan, KS 66506, USA
| | - Minh Nguyen
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, 2007, New South Wales, Australia.
| | - Sejeong Kim
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, 2007, New South Wales, Australia.
| | - James H Edgar
- Department of Chemical Engineering, Durland Hall, Kansas State University, Manhattan, KS 66506, USA
| | - Xiaojun Wu
- School of Chemistry and Materials Sciences, CAS Key Lab of Materials for Energy Conversion, and CAS Center for Excellence in Nanoscience, Hefei National Laboratory of Physics at the Microscale, Synergetic Innovation of Quantum Information & Quantum Technology, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Li Song
- School of Chemistry and Materials Sciences, CAS Key Lab of Materials for Energy Conversion, and CAS Center for Excellence in Nanoscience, Hefei National Laboratory of Physics at the Microscale, Synergetic Innovation of Quantum Information & Quantum Technology, University of Science and Technology of China, Hefei, Anhui 230026, China and National Synchrotron Radiation Laboratory, CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei, Anhui 230029, China
| | - Sajid Ali
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, 2007, New South Wales, Australia.
| | - Mike Ford
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, 2007, New South Wales, Australia.
| | - Milos Toth
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, 2007, New South Wales, Australia.
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, Faculty of Science, University of Technology Sydney, Ultimo, 2007, New South Wales, Australia.
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50
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Schell AW, Svedendahl M, Quidant R. Quantum Emitters in Hexagonal Boron Nitride Have Spectrally Tunable Quantum Efficiency. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1704237. [PMID: 29473231 DOI: 10.1002/adma.201704237] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/28/2017] [Revised: 11/29/2017] [Indexed: 05/22/2023]
Abstract
Understanding the properties of novel solid-state quantum emitters is pivotal for a variety of applications in research fields ranging from quantum optics to biology. Recently discovered defects in hexagonal boron nitride are especially interesting, as they offer much desired characteristics such as narrow emission lines and photostability. Here, the dependence of the emission on the excitation wavelength is studied. It is found that, in order to achieve bright single-photon emission with high quantum efficiency, the excitation wavelength has to be matched to the emitter. This is a strong indication that the emitters possess a complex level scheme and cannot be described by a simple two or three-level system. Using this excitation dependence of the emission, further insight to the internal level scheme is gained and it is demonstrated how to distinguish different emitters both spatially as well as in terms of their photon correlations.
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Affiliation(s)
- Andreas W Schell
- ICFO-Institut de Ciencies Fotoniques, Barcelona Institute of Science and Technology, 08860, Castelldefels (Barcelona), Spain
| | - Mikael Svedendahl
- ICFO-Institut de Ciencies Fotoniques, Barcelona Institute of Science and Technology, 08860, Castelldefels (Barcelona), Spain
| | - Romain Quidant
- ICFO-Institut de Ciencies Fotoniques, Barcelona Institute of Science and Technology, 08860, Castelldefels (Barcelona), Spain
- ICREA-Instituciò Catalana de Recerca i Estudis Avançats, 08010, Barcelona, Spain
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