1
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Syong WR, Fu JH, Kuo YH, Chu YC, Hakami M, Peng TY, Lynch J, Jariwala D, Tung V, Lu YJ. Enhanced Photogating Gain in Scalable MoS 2 Plasmonic Photodetectors via Resonant Plasmonic Metasurfaces. ACS NANO 2024. [PMID: 38315422 DOI: 10.1021/acsnano.3c10390] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/07/2024]
Abstract
Absorption of photons in atomically thin materials has become a challenge in the realization of ultrathin, high-performance optoelectronics. While numerous schemes have been used to enhance absorption in 2D semiconductors, such enhanced device performance in scalable monolayer photodetectors remains unattained. Here, we demonstrate wafer-scale integration of monolayer single-crystal MoS2 photodetectors with a nitride-based resonant plasmonic metasurface to achieve a high detectivity of 2.58 × 1012 Jones with a record-low dark current of 8 pA and long-term stability over 40 days. Upon comparison with control devices, we observe an overall enhancement factor of >100; this can be attributed to the local strong EM field enhanced photogating effect by the resonant plasmonic metasurface. Considering the compatibility of 2D semiconductors and hafnium nitride with the Si CMOS process and their scalability across wafer sizes, our results facilitate the smooth incorporation of 2D semiconductor-based photodetectors into the fields of imaging, sensing, and optical communication applications.
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Affiliation(s)
- Wei-Ren Syong
- Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
| | - Jui-Han Fu
- Department of Chemical System Engineering, School of Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| | - Yu-Hsin Kuo
- Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
| | - Yu-Cheng Chu
- Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Mariam Hakami
- Department of Chemical System Engineering, School of Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| | - Tzu-Yu Peng
- Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Jason Lynch
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Deep Jariwala
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Vincent Tung
- Department of Chemical System Engineering, School of Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| | - Yu-Jung Lu
- Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
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2
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Xin W, Zhong W, Shi Y, Shi Y, Jing J, Xu T, Guo J, Liu W, Li Y, Liang Z, Xin X, Cheng J, Hu W, Xu H, Liu Y. Low-Dimensional-Materials-Based Photodetectors for Next-Generation Polarized Detection and Imaging. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2306772. [PMID: 37661841 DOI: 10.1002/adma.202306772] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/10/2023] [Revised: 08/22/2023] [Indexed: 09/05/2023]
Abstract
The vector characteristics of light and the vectorial transformations during its transmission lay a foundation for polarized photodetection of objects, which broadens the applications of related detectors in complex environments. With the breakthrough of low-dimensional materials (LDMs) in optics and electronics over the past few years, the combination of these novel LDMs and traditional working modes is expected to bring new development opportunities in this field. Here, the state-of-the-art progress of LDMs, as polarization-sensitive components in polarized photodetection and even the imaging, is the main focus, with emphasis on the relationship between traditional working principle of polarized photodetectors (PPs) and photoresponse mechanisms of LDMs. Particularly, from the view of constitutive equations, the existing works are reorganized, reclassified, and reviewed. Perspectives on the opportunities and challenges are also discussed. It is hoped that this work can provide a more general overview in the use of LDMs in this field, sorting out the way of related devices for "more than Moore" or even the "beyond Moore" research.
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Affiliation(s)
- Wei Xin
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Weiheng Zhong
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Yujie Shi
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Yimeng Shi
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Jiawei Jing
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Tengfei Xu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Jiaxiang Guo
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Weizhen Liu
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Yuanzheng Li
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Zhongzhu Liang
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Xing Xin
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Jinluo Cheng
- GPL Photonics Laboratory, State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, Jilin, 130033, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Haiyang Xu
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Yichun Liu
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
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3
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Chen W, Chen A, Zhang R, Zeng J, Zhang L, Gu M, Wang C, Huang M, Guo Y, Duan H, Hu C, Shen W, Niu B, Watanabe K, Taniguchi T, Zhang J, Li J, Cai X, Liu G. Strong In-Plane Optoelectronic Anisotropy and Polarization Sensitivity in Low-Symmetry 2D Violet Phosphorus. NANO LETTERS 2023. [PMID: 38050812 DOI: 10.1021/acs.nanolett.3c02951] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
Anisotropic optoelectronics based on low-symmetry two-dimensional (2D) materials hold immense potential for enabling multidimensional visual perception with improved miniaturization and integration capabilities, which has attracted extensive interest in optical communication, high-gain photoswitching circuits, and polarization imaging fields. However, the reported in-plane anisotropic photocurrent and polarized dichroic ratios are limited, hindering the achievement of high-performance anisotropic optoelectronics. In this study, we introduce novel low-symmetry violet phosphorus (VP) with a unique tubular cross-linked structure into this realm, and the corresponding anisotropic optical and optoelectronic properties are investigated both experimentally and theoretically for the first time. Remarkably, our prepared VP-based van der Waals phototransistor exhibits significant optoelectronic anisotropies with a giant in-plane anisotropic photocurrent ratio exceeding 10 and a comparable polarized dichroic ratio of 2.16, which is superior to those of most reported 2D counterparts. Our findings establish VP as an exceptional candidate for anisotropic optoelectronics, paving the way for future multifunctional applications.
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Affiliation(s)
- Weilin Chen
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
| | - An Chen
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
| | - Ruan Zhang
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
| | - Jianmin Zeng
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
| | - Lihui Zhang
- Xi'an Thermal Power Research Institute Co., Ltd., Xi'an 710054, People's Republic of China
| | - Mengyue Gu
- School of Electrical Engineering, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China
| | - Chaofan Wang
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, Guangdong, People's Republic of China
| | - Mingyuan Huang
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, Guangdong, People's Republic of China
| | - Yanbo Guo
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
| | - Hongxiao Duan
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
| | - Chunguang Hu
- State Key Laboratory of Precision Measuring Technology and Instruments, Tianjin University, Tianjin 300072, People's Republic of China
| | - Wanfu Shen
- State Key Laboratory of Precision Measuring Technology and Instruments, Tianjin University, Tianjin 300072, People's Republic of China
| | - Baoxin Niu
- State Key Laboratory of Precision Measuring Technology and Instruments, Tianjin University, Tianjin 300072, People's Republic of China
| | - Kenji Watanabe
- National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Jinying Zhang
- School of Electrical Engineering, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China
| | - Jinjin Li
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
| | - Xinghan Cai
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
| | - Gang Liu
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
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4
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Lien MR, Wang N, Guadagnini S, Wu J, Soibel A, Gunapala SD, Wang H, Povinelli ML. Black Phosphorus Molybdenum Disulfide Midwave Infrared Photodiodes with Broadband Absorption-Increasing Metasurfaces. NANO LETTERS 2023; 23:9980-9987. [PMID: 37883580 PMCID: PMC10636840 DOI: 10.1021/acs.nanolett.3c03076] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/15/2023] [Revised: 10/20/2023] [Accepted: 10/24/2023] [Indexed: 10/28/2023]
Abstract
Black phosphorus (BP) has been established as a promising material for room temperature midwave infrared (MWIR) photodetectors. However, many of its attractive optoelectronic properties are often observable only at smaller film thicknesses, which inhibits photodetector absorption and performance. In this work, we show that metasurface gratings increase the absorption of BP-MoS2 heterojunction photodiodes over a broad range of wavelengths in the MWIR. We designed, fabricated, and characterized metasurface gratings that increase absorption at selected wavelengths or broad spectral ranges. We evaluated the broadband metasurfaces by measuring the room temperature responsivity and specific detectivity of BP-MoS2 photodiodes at multiple MWIR wavelengths. Our results show that broadband metasurface gratings are a scalable approach for boosting the performance of BP photodiodes over large spectral ranges.
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Affiliation(s)
- Max R. Lien
- Ming
Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States
| | - Nan Wang
- Mork
Family Department of Chemical Engineering & Materials Science, University of Southern California, Los Angeles, California 90089, United States
| | - Silvia Guadagnini
- Department
of Physics & Astronomy, University of
Southern California, Los Angeles, California 90089, United States
| | - Jiangbin Wu
- Ming
Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States
| | - Alexander Soibel
- Jet
Propulsion Laboratory, California Institute
of Technology, 4800 Oak
Grove Dr., Pasadena, California 91030, United States
| | - Sarath D. Gunapala
- Jet
Propulsion Laboratory, California Institute
of Technology, 4800 Oak
Grove Dr., Pasadena, California 91030, United States
| | - Han Wang
- Ming
Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States
- Mork
Family Department of Chemical Engineering & Materials Science, University of Southern California, Los Angeles, California 90089, United States
| | - Michelle L. Povinelli
- Ming
Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States
- Department
of Physics & Astronomy, University of
Southern California, Los Angeles, California 90089, United States
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5
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Tang L, Zou J. p-Type Two-Dimensional Semiconductors: From Materials Preparation to Electronic Applications. NANO-MICRO LETTERS 2023; 15:230. [PMID: 37848621 PMCID: PMC10582003 DOI: 10.1007/s40820-023-01211-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/04/2023] [Accepted: 09/04/2023] [Indexed: 10/19/2023]
Abstract
Two-dimensional (2D) materials are regarded as promising candidates in many applications, including electronics and optoelectronics, because of their superior properties, including atomic-level thickness, tunable bandgaps, large specific surface area, and high carrier mobility. In order to bring 2D materials from the laboratory to industrialized applications, materials preparation is the first prerequisite. Compared to the n-type analogs, the family of p-type 2D semiconductors is relatively small, which limits the broad integration of 2D semiconductors in practical applications such as complementary logic circuits. So far, many efforts have been made in the preparation of p-type 2D semiconductors. In this review, we overview recent progresses achieved in the preparation of p-type 2D semiconductors and highlight some promising methods to realize their controllable preparation by following both the top-down and bottom-up strategies. Then, we summarize some significant application of p-type 2D semiconductors in electronic and optoelectronic devices and their superiorities. In end, we conclude the challenges existed in this field and propose the potential opportunities in aspects from the discovery of novel p-type 2D semiconductors, their controlled mass preparation, compatible engineering with silicon production line, high-κ dielectric materials, to integration and applications of p-type 2D semiconductors and their heterostructures in electronic and optoelectronic devices. Overall, we believe that this review will guide the design of preparation systems to fulfill the controllable growth of p-type 2D semiconductors with high quality and thus lay the foundations for their potential application in electronics and optoelectronics.
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Affiliation(s)
- Lei Tang
- Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, People's Republic of China.
| | - Jingyun Zou
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, 215009, Jiangsu, People's Republic of China.
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6
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Liu Y, Guo W, Hua L, Zeng X, Yang T, Fan Q, Ma Y, Gao C, Sun Z, Luo J. Giant Polarization Sensitivity via the Anomalous Photovoltaic Effect in a Two-Dimensional Perovskite Ferroelectric. J Am Chem Soc 2023; 145:16193-16199. [PMID: 37462120 DOI: 10.1021/jacs.3c05020] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/27/2023]
Abstract
Polarization sensitivity, which shows great potential in photoelectric detection, is expected to be significantly improved by the ferroelectric anomalous photovoltaic (APV) effect. However, it is challenging to explore new APV-active ferroelectrics due to severe polarization fatigue induced by the leakage current of photoexcited carriers. For the first time, we report a strong APV effect in a 2D hybrid perovskite ferroelectric assembled by alloying mixed organic cations, (HA)2(EA)2Pb3Br10 (1, where HA+ is n-hexylammonium and EA+ is ethylammonium), which has a large spontaneous polarization ∼3.8 μC/cm2 and high a Curie temperature ∼378 K. Its ferroelectricity allows a strong APV effect with an above-bandgap photovoltage up to 7.4 V, which exceeds its bandgap (∼2.7 eV). Most strikingly, based on the dependence on polarized-light angle, this strong APV effect renders the highest level of polarization sensitivity with a giant current ratio of ∼25, far beyond other 2D single-phase materials. This study sheds light on the exploration of APV-active ferroelectrics and inspires their future high-performance optoelectronic device applications.
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Affiliation(s)
- Yi Liu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, Fujian, People's Republic of China
| | - Wuqian Guo
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, Fujian, People's Republic of China
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100039, People's Republic of China
| | - Lina Hua
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, Fujian, People's Republic of China
| | - Xi Zeng
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, Fujian, People's Republic of China
| | - Tian Yang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, Fujian, People's Republic of China
| | - Qingshun Fan
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, Fujian, People's Republic of China
| | - Yu Ma
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, Fujian, People's Republic of China
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100039, People's Republic of China
| | - Changhao Gao
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, Fujian, People's Republic of China
| | - Zhihua Sun
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, Fujian, People's Republic of China
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100039, People's Republic of China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, Fujian, People's Republic of China
| | - Junhua Luo
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, Fujian, People's Republic of China
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100039, People's Republic of China
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7
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Chen G, Meng W, Guan X, Zhao P, Jia S, Zheng H, Zhao D, Wang J. Strong interlayer coupling and unusual antisite defect-mediated p-type conductivity in GeP x ( x = 1, 2). NANOSCALE 2023; 15:9139-9147. [PMID: 37144280 DOI: 10.1039/d3nr01677c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/06/2023]
Abstract
As an emerging candidate for anisotropic two-dimensional materials, the group IV-V family (e.g. GeP, GeP2) has appealing applications in photoelectronics. However, their intrinsic point defect properties, which largely determine the device performance and optimization, are still poorly explored. In our study, through density functional theory (DFT) calculations, antisite defects were affirmed to be dominant with the lowest formation energies in 2D GePx semiconductors because of the similar atomic size and electronegativity of elemental components, which is in contrast to previous calculations and experimental speculation. These antisite defects could introduce relatively shallow states within the bandgap in bulk cases. The transition energy levels and electronic structures of defects reveal that GeP and PGe antisites act as dominant acceptors and donors, respectively. Strong interlayer coupling between anions results in a significant upshift of the valence band maximum (VBM) and shallower acceptor behaviors of GePx. Together with the dominant GeP antisite defect, the large upshift of the VBM in GeP leads to a remarkable transition of conductivity from intrinsic in the monolayer to p-type in the bulk. Such a synergistic effect in GeP2 is rather weak due to the strong inherent intralayer coupling of anions. Our research provides deep insights into the strong anion coupling effects on the electronic structures and defect properties of GeP and GeP2, which sheds light on defect engineering and electronic applications of GePx based semiconductors.
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Affiliation(s)
- Guoxujia Chen
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies, Wuhan University, Wuhan 430072, China.
| | - Weiwei Meng
- South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China.
| | - Xiaoxi Guan
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies, Wuhan University, Wuhan 430072, China.
| | - Peili Zhao
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies, Wuhan University, Wuhan 430072, China.
| | - Shuangfeng Jia
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies, Wuhan University, Wuhan 430072, China.
| | - He Zheng
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies, Wuhan University, Wuhan 430072, China.
- Suzhou Institute of Wuhan University, Suzhou, Jiangsu 215124, China
- Wuhan University Shenzhen Research Institute, Shenzhen, Guangdong 518057, China
| | - Dongshan Zhao
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies, Wuhan University, Wuhan 430072, China.
| | - Jianbo Wang
- School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-structures, and Institute for Advanced Studies, Wuhan University, Wuhan 430072, China.
- Core Facility of Wuhan University, Wuhan 430072, China
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8
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Wan T, Zhang M, Jiang HR, Zhang YC, Zhang XM, Wang YL, Zhang PX. Tissue-Engineered Nanomaterials Play Diverse Roles in Bone Injury Repair. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:nano13091449. [PMID: 37176994 PMCID: PMC10180507 DOI: 10.3390/nano13091449] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/03/2023] [Revised: 04/08/2023] [Accepted: 04/20/2023] [Indexed: 05/15/2023]
Abstract
Nanomaterials with bone-mimicking characteristics and easily internalized by the cell could create suitable microenvironments in which to regulate the therapeutic effects of bone regeneration. This review provides an overview of the current state-of-the-art research in developing and using nanomaterials for better bone injury repair. First, an overview of the hierarchical architecture from the macroscale to the nanoscale of natural bone is presented, as these bone tissue microstructures and compositions are the basis for constructing bone substitutes. Next, urgent clinical issues associated with bone injury that require resolution and the potential of nanomaterials to overcome them are discussed. Finally, nanomaterials are classified as inorganic or organic based on their chemical properties. Their basic characteristics and the results of related bone engineering studies are described. This review describes theoretical and technical bases for the development of innovative methods for repairing damaged bone and should inspire therapeutic strategies with potential for clinical applications.
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Affiliation(s)
- Teng Wan
- Department of Orthopedics and Trauma, Peking University People's Hospital, Beijing 100044, China
- Key Laboratory of Trauma and Neural Regeneration, Peking University, Beijing 100044, China
- National Center for Trauma Medicine, Beijing 100044, China
| | - Meng Zhang
- Department of Orthopedics and Trauma, Peking University People's Hospital, Beijing 100044, China
- Key Laboratory of Trauma and Neural Regeneration, Peking University, Beijing 100044, China
- National Center for Trauma Medicine, Beijing 100044, China
| | - Hao-Ran Jiang
- Department of Orthopedics and Trauma, Peking University People's Hospital, Beijing 100044, China
- Key Laboratory of Trauma and Neural Regeneration, Peking University, Beijing 100044, China
- National Center for Trauma Medicine, Beijing 100044, China
| | - Yi-Chong Zhang
- Department of Orthopedics and Trauma, Peking University People's Hospital, Beijing 100044, China
- Key Laboratory of Trauma and Neural Regeneration, Peking University, Beijing 100044, China
- National Center for Trauma Medicine, Beijing 100044, China
| | - Xiao-Meng Zhang
- Department of Orthopedics and Trauma, Peking University People's Hospital, Beijing 100044, China
- Key Laboratory of Trauma and Neural Regeneration, Peking University, Beijing 100044, China
- National Center for Trauma Medicine, Beijing 100044, China
| | - Yi-Lin Wang
- Department of Orthopedics and Trauma, Peking University People's Hospital, Beijing 100044, China
- Key Laboratory of Trauma and Neural Regeneration, Peking University, Beijing 100044, China
- National Center for Trauma Medicine, Beijing 100044, China
| | - Pei-Xun Zhang
- Department of Orthopedics and Trauma, Peking University People's Hospital, Beijing 100044, China
- Key Laboratory of Trauma and Neural Regeneration, Peking University, Beijing 100044, China
- National Center for Trauma Medicine, Beijing 100044, China
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9
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Yan N, Qiu Y, He X, Tang X, Hao Q, Chen M. Plasmonic Enhanced Nanocrystal Infrared Photodetectors. MATERIALS (BASEL, SWITZERLAND) 2023; 16:3216. [PMID: 37110051 PMCID: PMC10146273 DOI: 10.3390/ma16083216] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/31/2023] [Revised: 04/13/2023] [Accepted: 04/17/2023] [Indexed: 06/19/2023]
Abstract
Low-dimensional nanomaterials are widely investigated in infrared photodetectors (PDs) due to their excellent optical and electrical properties. To further improve the PDs property like quantum efficiency, metallic microstructures are commonly used, which could squeeze light into sub-diffraction volumes for enhanced absorption through surface plasma exciton resonance effects. In recent years, plasmonic enhanced nanocrystal infrared PDs have shown excellent performance and attracted much research interest. In this paper, we summarize the progress in plasmonic enhanced nanocrystal infrared PDs based on different metallic structures. We also discuss challenges and prospects in this field.
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Affiliation(s)
- Naiquan Yan
- School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China
| | - Yanyan Qiu
- School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China
| | - Xubing He
- School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China
| | - Xin Tang
- School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China
- Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314019, China
| | - Qun Hao
- School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China
- Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314019, China
- School of Optoelectronic Engineering, Changchun University of Science and Technology, Changchun 130022, China
| | - Menglu Chen
- School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China
- Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314019, China
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10
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Wu J, Zhang X, Wang Z, Liang L, Niu X, Guan Q, You S, Luo J. Near-infrared polarization-sensitive photodetection via interfacial symmetry engineering of an Si/MAPbI 3 heterostructural single crystal. MATERIALS HORIZONS 2023; 10:952-959. [PMID: 36602385 DOI: 10.1039/d2mh01287a] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Methylammonium lead iodide (MAPbI3) single crystals (SCs) have drawn particular attention in the optoelectronics field, due to their outstanding photoelectric performance. However, the structures of those MAPbI3 SCs are isotropic, which limits the further application of the materials for polarization-sensitive photodetection. Here, we propose a strategy of symmetry modulation by heterogeneously integrating large-sized MAPbI3 SCs with silicon (Si) wafers and we give the first demonstration of self-powered near-infrared (NIR) polarization-sensitive photodetection using MAPbI3 SCs. Created via a delicate solution method, the MAPbI3/Si heterostructures show a high crystalline quality and a solid interfacial connection. More importantly, the built-in electric field resulting from the band bending at the MAPbI3/Si heterostructure interface generates polar symmetry, which enables directional transport of photogenerated carriers, making the MAPbI3/Si heterostructures highly polarization-sensitive. Consequently, in the self-powered mode, NIR photodetectors of MAPbI3/Si heterostructures exhibit large polarization ratios of 3.3 at 785 nm and 2.8 at 940 nm. Moreover, a high detectivity of 7.35 × 1012 Jones of the present devices is also achieved. Our work gives the first demonstration of self-powered polarization-sensitive photodetection of MAPbI3 SCs and provides a strategy to design polarization-sensitive materials beyond the conventional limitations induced by isotropic structures.
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Affiliation(s)
- Jianbo Wu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, P. R. China.
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian 350108, P. R. China
| | - Xinyuan Zhang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, P. R. China.
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian 350108, P. R. China
| | - Ziyang Wang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, P. R. China.
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian 350108, P. R. China
| | - Lishan Liang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, P. R. China.
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian 350108, P. R. China
| | - Xinyi Niu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, P. R. China.
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian 350108, P. R. China
| | - Qianwen Guan
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, P. R. China.
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian 350108, P. R. China
| | - Shihai You
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, P. R. China.
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian 350108, P. R. China
| | - Junhua Luo
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, P. R. China.
- Key Laboratory of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education, School of Chemistry and Chemical Engineering, Jiangxi Normal University, Nanchang, Jiangxi 330022, P. R. China
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian 350108, P. R. China
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11
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Liu J, Long L, Yang Y. Modeling of Enhanced Polar Magneto-Optic Kerr Effect by Surface Plasmons in Au Bowtie Arrays. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:253. [PMID: 36678005 PMCID: PMC9863591 DOI: 10.3390/nano13020253] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/23/2022] [Revised: 12/31/2022] [Accepted: 01/01/2023] [Indexed: 06/17/2023]
Abstract
The weak magneto-optical (MO) signal of traditional MO materials is indeed an important issue for their further practical applications. Although many strategies have been proposed to improve the MO effect, hybridization with noble metal nanostructures is a promising route in recent years due to the high localized-surface plasmon resonances (LSPR) effect. A new magneto-optical surface plasmon resonance (MOSPR) structure hybrid with Au bowtie arrays is proposed to increase the measuring range of the polar magneto-optical Kerr effect (PMOKE) and the quality factor through the LSPR effect. It is verified by a numerical simulation of the finite element method (FEM). The optimized parameters were found by modulating the shape and geometric dimensions. Owing to the significant LSPR from the Au bowties, a PMOKE amplification signal spectrum with narrow linewidth, and a high amplitude with high-sensing performance was achieved. Compared with the bare magnetic film alone, by optimizing the relevant parameters of the LSPR structure, the maximum signal increases 3255 times, and the quality factor can be greatly improved, which would provide important guidance and help for the practical application of MO devices.
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Affiliation(s)
- Jingyi Liu
- Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China
| | - Lianchun Long
- Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China
| | - Yang Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
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12
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Rogalski A. Scaling infrared detectors-status and outlook. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2022; 85:126501. [PMID: 36198261 DOI: 10.1088/1361-6633/ac97a8] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/27/2022] [Accepted: 10/05/2022] [Indexed: 06/16/2023]
Abstract
The predicted 'Law 19' benchmark for HgCdTe photodiode performance established in 2019 is a milestone in the development of infrared (IR) detectors and make the dream of Elliott and colleagues, who in 1999 wrote thatthere is no fundamental obstacle to obtaining room temperature operation of photon detectors at room temperature with background-limited performance even in reduced fields of view(Elliottet al1999Appl. Phys. Lett.742881). This circumstance will make it possible to achieve in the near future the room-temperature IR arrays operation with high pixel density (small pixels) fully compatible with the background and diffraction-limited performance resulting from the system optics. The advent of smaller pixels also results in superior spatial and temperature resolutions of imaging systems. In megapixel imaging systems, the pixel dimension plays a crucial role in determining critical system attributes such as system size, weight, and power consumption. In the paper, the physical limitations of pixel size related to the aperture of the optics, which in turn is wavelength dependent, are described. Since the critical parameter of small pixels is quantum efficiency, more attention has been paid to enhancing the coupling of radiation to the detector. Then, the evaluation for assessing the figure-of-merit of different material systems (especially short wavelength IR colloidal quantum dots, both medium and long wavelength IR novel III-V material systems) relative to bulk HgCdTe alloys is considered. Of the various thermal detectors, particular attention has been focussed on bolometer arrays due to their largest share of the global commercial market. Also key challenges in realizing ultimate pixel dimensions in focal plane arrays design are presented for different material systems including dark current, pixel hybridization, pixel delineation, and unit cell readout capacity.
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Affiliation(s)
- A Rogalski
- Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland
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13
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Li Z, Song J, Yang H. Emerging low-dimensional black phosphorus: from physical-optical properties to biomedical applications. Sci China Chem 2022. [DOI: 10.1007/s11426-022-1355-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022]
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14
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Lien MR, Wang N, Wu J, Soibel A, Gunapala SD, Wang H, Povinelli ML. Resonant Grating-Enhanced Black Phosphorus Mid-Wave Infrared Photodetector. NANO LETTERS 2022; 22:8704-8710. [PMID: 36287194 DOI: 10.1021/acs.nanolett.2c03469] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Black phosphorus (BP) has emerged as a promising materials system for mid-wave infrared photodetection because of its moderate bandgap, high carrier mobility, substrate compatibility, and bandgap tunability. However, its uniquely tunable bandgap can only be taken advantage of with thin layer thicknesses, which ultimately limits the optical absorption of a BP photodetector. This work demonstrates an absorption-boosting resonant metal-insulator-metal (MIM) metasurface grating integrated with a thin-film BP photodetector. We designed and fabricated different MIM gratings and characterized their spectral properties. Then, we show that an MIM structure increased room temperature responsivity from 12 to 77 mA W-1 at 3.37 μm when integrated with a thin-film BP photodetector. Our results show that MIM structures simultaneously increase mid-wave infrared absorption and responsivity in a thin-film BP photodetector.
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Affiliation(s)
- Max R Lien
- Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States
| | - Nan Wang
- Mork Family Department of Chemical Engineering & Materials Science, University of Southern California, Los Angeles, California 90089, United States
| | - Jiangbin Wu
- Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States
| | - Alexander Soibel
- Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Drive, Pasadena, California 91030, United States
| | - Sarath D Gunapala
- Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Drive, Pasadena, California 91030, United States
| | - Han Wang
- Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States
- Mork Family Department of Chemical Engineering & Materials Science, University of Southern California, Los Angeles, California 90089, United States
| | - Michelle L Povinelli
- Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States
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15
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Lv T, Huang X, Zhang W, Deng C, Chen F, Wang Y, Long J, Gao H, Deng L, Ye L, Xiong W. High-Responsivity Multiband and Polarization-Sensitive Photodetector Based on the TiS 3/MoS 2 Heterojunction. ACS APPLIED MATERIALS & INTERFACES 2022; 14:48812-48820. [PMID: 36268890 DOI: 10.1021/acsami.2c12332] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Two-dimensional (2D) material photodetectors have received considerable attention in optoelectronics as a result of their extraordinary properties, such as passivated surfaces, strong light-matter interactions, and broad spectral responses. However, single 2D material photodetectors still suffer from low responsivity, large dark current, and long response time as a result of their atomic-level thickness, large binding energy, and susceptibility to defects. Here, a transition metal trichalcogenide TiS3 with excellent photoelectric characteristics, including a direct bandgap (1.1 eV), high mobility, high air stability, and anisotropy, is selected to construct a type-II heterojunction with few-layer MoS2, aiming to improve the performance of 2D photodetectors. An ultrahigh photoresponsivity of the TiS3/MoS2 heterojunction of 48 666 A/W at 365 nm, 20 000 A/W at 625 nm, and 251 A/W at 850 nm is achieved under light-emitting diode illumination. The response time and dark current are 2 and 3 orders of magnitude lower than those of the current TiS3 photodetector with the highest photoresponsivity (2500 A/W), respectively. Furthermore, polarized four-wave mixing spectroscopy and polarized photocurrent measurements verify its polarization-sensitive characteristics. This work confirms the excellent potential of TiS3/MoS2 heterojunctions for air-stable, high-performance, polarization-sensitive, and multiband photodetectors, and the excellent type-II TiS3/MoS2 heterojunction system may accelerate the design and fabrication of other 2D functional devices.
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Affiliation(s)
- Ting Lv
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei430074, People's Republic of China
| | - Xinyu Huang
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei430074, People's Republic of China
- School of Optical and Electronic Information, Huazhong University of Science and Technology,Wuhan, Hubei430074, People's Republic of China
- Hubei Yangtze Memory Laboratories, Wuhan, Hubei430205, People's Republic of China
| | - Wenguang Zhang
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei430074, People's Republic of China
| | - Chunsan Deng
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei430074, People's Republic of China
| | - Fayu Chen
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei430074, People's Republic of China
| | - Yingchen Wang
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei430074, People's Republic of China
| | - Jing Long
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei430074, People's Republic of China
| | - Hui Gao
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei430074, People's Republic of China
- Optics Valley Laboratory, Wuhan, Hubei430074, People's Republic of China
| | - Leimin Deng
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei430074, People's Republic of China
- Optics Valley Laboratory, Wuhan, Hubei430074, People's Republic of China
| | - Lei Ye
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei430074, People's Republic of China
- School of Optical and Electronic Information, Huazhong University of Science and Technology,Wuhan, Hubei430074, People's Republic of China
- Hubei Yangtze Memory Laboratories, Wuhan, Hubei430205, People's Republic of China
| | - Wei Xiong
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei430074, People's Republic of China
- Optics Valley Laboratory, Wuhan, Hubei430074, People's Republic of China
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16
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Chen M, Wang Y, Zhao Z. Monolithic Metamaterial-Integrated Graphene Terahertz Photodetector with Wavelength and Polarization Selectivity. ACS NANO 2022; 16:17263-17273. [PMID: 36129770 DOI: 10.1021/acsnano.2c07968] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The frequency spectra and polarization states of terahertz waves can convey significant information about physical interactions and material properties. Compact and miniaturized on-chip platforms for effective capturing of these quantities are being extensively investigated because of their promising potential for paramount applications of terahertz technology such as in situ sensing and characterization. Here, we present a metamaterial-graphene hybrid device that integrates the functions of photodetection, wavelength, and polarization selectivity into a monolithic architecture. Leveraging the ultrahigh design freedom of metamaterial optical properties and the electronically controllable hot-carrier-assisted photothermoelectric effect in graphene, our detector shows resonantly enhanced photoresponse at two specific target wavelengths with orthogonal polarizations. We demonstrate its versatile capabilities for spectrally selective and polarization resolved imaging on a single-chip platform that is free from advanced optical components. Our strategy is beneficial to the future development of multifunctional, compact, and low-cost terahertz sensors.
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Affiliation(s)
- Meng Chen
- National Engineering Research Center for Dangerous Articles and Explosives Detection Technologies, Department of Engineering Physics, Tsinghua University, Beijing 100084, China
| | - Yingxin Wang
- National Engineering Research Center for Dangerous Articles and Explosives Detection Technologies, Department of Engineering Physics, Tsinghua University, Beijing 100084, China
| | - Ziran Zhao
- National Engineering Research Center for Dangerous Articles and Explosives Detection Technologies, Department of Engineering Physics, Tsinghua University, Beijing 100084, China
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17
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Wang F, Liu Z, Zhang T, Long M, Wang X, Xie R, Ge H, Wang H, Hou J, Gu Y, Hu X, Song Z, Wang S, Dong Q, Liao K, Tu Y, Han T, Li F, Zhang Z, Hou X, Wang S, Li L, Zhang X, Zhao D, Shan C, Shan L, Hu W. Fully Depleted Self-Aligned Heterosandwiched Van Der Waals Photodetectors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2203283. [PMID: 35972840 DOI: 10.1002/adma.202203283] [Citation(s) in RCA: 15] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/12/2022] [Revised: 07/21/2022] [Indexed: 06/15/2023]
Abstract
Room-temperature-operating highly sensitive mid-wavelength infrared (MWIR) photodetectors are utilized in a large number of important applications, including night vision, communications, and optical radar. Many previous studies have demonstrated uncooled MWIR photodetectors using 2D narrow-bandgap semiconductors. To date, most of these works have utilized atomically thin flakes, simple van der Waals (vdW) heterostructures, or atomically thin p-n junctions as absorbers, which have difficulty in meeting the requirements for state-of-the-art MWIR photodetectors with a blackbody response. Here, a fully depleted self-aligned MoS2 -BP-MoS2 vdW heterostructure sandwiched between two electrodes is reported. This new type of photodetector exhibits competitive performance, including a high blackbody peak photoresponsivity up to 0.77 A W-1 and low noise-equivalent power of 2.0 × 10-14 W Hz-1/2 , in the MWIR region. A peak specific detectivity of 8.61 × 1010 cm Hz1/2 W-1 under blackbody radiation is achieved at room temperature in the MWIR region. Importantly, the effective detection range of the device is twice that of state-of-the-art MWIR photodetectors. Furthermore, the device presents an ultrafast response of ≈4 µs both in the visible and short-wavelength infrared bands. These results provide an ideal platform for realizing broadband and highly sensitive room-temperature MWIR photodetectors.
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Affiliation(s)
- Fang Wang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Zhiyi Liu
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Tao Zhang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Mingsheng Long
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Xiuxiu Wang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Runzhang Xie
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Haonan Ge
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Hao Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Jie Hou
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Yue Gu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Xin Hu
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Ze Song
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Suofu Wang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Qingsong Dong
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Kecai Liao
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Yubing Tu
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Tao Han
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Feng Li
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Zongyuan Zhang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Xingyuan Hou
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Shaoliang Wang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Liang Li
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Xueao Zhang
- College of Physical Science and Technology, Xiamen University, Xiamen, 361005, China
| | - Dongxu Zhao
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 3888 Dongnanhu Road, Changchun, 130021, China
| | - Chongxin Shan
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, School of Physics and Engineering, Zhengzhou University, Zhengzhou, 450001, China
| | - Lei Shan
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei, 230601, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
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18
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Zhou L, Zhou L, Wei C, Guo R. A bioactive dextran-based hydrogel promote the healing of infected wounds via antibacterial and immunomodulatory. Carbohydr Polym 2022; 291:119558. [DOI: 10.1016/j.carbpol.2022.119558] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/05/2022] [Revised: 04/10/2022] [Accepted: 04/27/2022] [Indexed: 12/20/2022]
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19
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He J, Li CY, Qi DX, Cai Q, Liu Y, Fan RH, Su J, Huo P, Xu T, Peng R, Wang M. Improving Photoelectric Conversion with Broadband Perovskite Metasurface. NANO LETTERS 2022; 22:6655-6663. [PMID: 35925801 DOI: 10.1021/acs.nanolett.2c01979] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The miniaturization and integration of optoelectronic devices require progressive size reduction of active layers, resulting in less optical absorption and lower quantum efficiency. In this work, we demonstrate that introducing a metasurface made of hybrid organic-inorganic perovskite (HOIP) can significantly enhance broadband absorption and improve photon-to-electron conversion, which roots from exciting Mie resonances together with suppressing optical transmission. On the basis of the HOIP metasurface, a broadband photodetector has been fabricated where photocurrent boosts more than 10 times in the frequency ranging from ultraviolet to visible. The device response time is less than 5.1 μs at wavelengths 380, 532, and 710 nm, and the relevant 3 dB bandwidth is over 0.26 MHz. Moreover, this photodetector has been applied as a signal receiver for transmitting 2D color images in broadband optical communication. These results accentuate the practical applications of HOIP metasurfaces in novel optoelectronic devices for broadband optical communication.
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Affiliation(s)
- Jie He
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Cheng-Yao Li
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Dong-Xiang Qi
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Qing Cai
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Yu Liu
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Ren-Hao Fan
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Jing Su
- School of Physics and Optoelectronic Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, China
| | - Pengcheng Huo
- National Laboratory of Solid-State Microstructures, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Ting Xu
- National Laboratory of Solid-State Microstructures, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Ruwen Peng
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Mu Wang
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
- American Physical Society, Ridge, New York 11961, United States
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20
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Dai M, Wang C, Qiang B, Wang F, Ye M, Han S, Luo Y, Wang QJ. On-chip mid-infrared photothermoelectric detectors for full-Stokes detection. Nat Commun 2022; 13:4560. [PMID: 35931776 PMCID: PMC9356042 DOI: 10.1038/s41467-022-32309-w] [Citation(s) in RCA: 30] [Impact Index Per Article: 15.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/12/2022] [Accepted: 07/25/2022] [Indexed: 11/09/2022] Open
Abstract
On-chip polarimeters are highly desirable for the next-generation ultra-compact optical and optoelectronic systems. Polarization-sensitive photodetectors relying on anisotropic absorption of natural/artificial materials have emerged as a promising candidate for on-chip polarimeters owing to their filterless configurations. However, these photodetectors can only be applied for detection of either linearly or circularly polarized light, not applicable for full-Stokes detection. Here, we propose and demonstrate three-ports polarimeters comprising on-chip chiral plasmonic metamaterial-mediated mid-infrared photodetectors for full-Stokes detection. By manipulating the spatial distribution of chiral metamaterials, we could convert polarization-resolved absorptions to corresponding polarization-resolved photovoltages of three ports through the photothermoelectric effect. We utilize the developed polarimeter in an imaging demonstration showing reliable ability for polarization reconstruction. Our work provides an alternative strategy for developing polarization-resolved photodetectors with a bandgap-independent operation range in the mid-infrared.
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Affiliation(s)
- Mingjin Dai
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Chongwu Wang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Bo Qiang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Fakun Wang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Ming Ye
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Song Han
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Yu Luo
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore.
| | - Qi Jie Wang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore. .,Centre for Disruptive Photonic Technologies, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore.
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21
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Li L, Gao G, Liu X, Sun Y, Lei J, Chen Z, Dan Z, Gao W, Zheng T, Wang X, Huo N, Li J. Polarization-Resolved p-Se/n-WS 2 Heterojunctions toward Application in Microcomputer System as Multivalued Signal Trigger. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2202523. [PMID: 35905495 DOI: 10.1002/smll.202202523] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/23/2022] [Revised: 07/07/2022] [Indexed: 06/15/2023]
Abstract
Polarization-sensitive photodetectors based on van der Waals heterojunctions (vdWH) have excellent polarization-resolved optoelectronic properties that can enable the applications in polarized light identification and imaging. With the development of optical microcomputer control systems (OMCS), it is crucial and energy efficient to adopt the self-powered and polarization-resolved signal-generators to optimize the circuit design of OMCS. In this work, the selenium (Se) flakes with in-plane anisotropy and p-type character are grown and incorporated with n-type tungsten disulfide (WS2 ) to construct the type-II vdWH for polarization-sensitive and self-powered photodetectors. Under 405 nm monochrome laser with 1.33 mW cm-2 power density, the photovoltaic device exhibits superior photodetection performance with the photoelectric conversion efficiency (PCE) of 3.6%, the responsivity (R) of 196 mA W-1 and the external quantum efficiency (EQE) of about 60%. The strong in-plane anisotropy of Se crystal structure gives rise to the capability of polarized light detection with anisotropic photocurrent ratio of ≈2.2 under the 405 nm laser (13.71 mW cm-2 ). Benefiting from the well polarization-sensitive and photovoltaic properties, the p-Se/n-WS2 vdWH is successfully applied in the OMCS as multivalued signal trigger. This work develops the new anisotropic vdWH and demonstrates its feasibility for applications in logic circuits and control systems.
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Affiliation(s)
- Ling Li
- Institute of Semiconductors, South China Normal University, Guangzhou, 510631, P. R. China
| | - Ge Gao
- Institute of Semiconductors, South China Normal University, Guangzhou, 510631, P. R. China
| | - Xueting Liu
- Institute of Semiconductors, South China Normal University, Guangzhou, 510631, P. R. China
| | - Yiming Sun
- Institute of Semiconductors, South China Normal University, Guangzhou, 510631, P. R. China
| | - Jianpeng Lei
- Nanchang Hangkong University, Nanchang, 330036, P. R. China
| | - Zecheng Chen
- Institute of Semiconductors, South China Normal University, Guangzhou, 510631, P. R. China
| | - Zhiying Dan
- Institute of Semiconductors, South China Normal University, Guangzhou, 510631, P. R. China
| | - Wei Gao
- Institute of Semiconductors, South China Normal University, Guangzhou, 510631, P. R. China
| | - Tao Zheng
- Institute of Semiconductors, South China Normal University, Guangzhou, 510631, P. R. China
| | - Xiaozhou Wang
- Institute of Semiconductors, South China Normal University, Guangzhou, 510631, P. R. China
| | - Nengjie Huo
- Institute of Semiconductors, South China Normal University, Guangzhou, 510631, P. R. China
| | - Jingbo Li
- Institute of Semiconductors, South China Normal University, Guangzhou, 510631, P. R. China
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou, 510631, P.R. China
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22
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Chen Y, Tan C, Wang Z, Miao J, Ge X, Zhao T, Liao K, Ge H, Wang Y, Wang F, Zhou Y, Wang P, Zhou X, Shan C, Peng H, Hu W. Momentum-matching and band-alignment van der Waals heterostructures for high-efficiency infrared photodetection. SCIENCE ADVANCES 2022; 8:eabq1781. [PMID: 35905192 DOI: 10.1126/sciadv.abq1781] [Citation(s) in RCA: 21] [Impact Index Per Article: 10.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Two-dimensional (2D) infrared photodetectors always suffer from low quantum efficiency (QE) because of the limited atomically thin absorption. Here, we reported 2D black phosphorus (BP)/Bi2O2Se van der Waals (vdW) photodetectors with momentum-matching and band-alignment heterostructures to achieve high QE. The QE was largely improved by optimizing the generation, suppressing the recombination, and improving the collection of photocarriers. Note that momentum-matching BP/Bi2O2Se heterostructures in k-space lead to the highly efficient generation and transition of photocarriers. The recombination process can be largely suppressed by lattice mismatching-immune vdW interfaces. Furthermore, type II BP/Bi2O2Se vdW heterostructures could also assist fast transport and collection of photocarriers. By constructing momentum-matching and band-alignment heterostructures, a record-high QE of 84% at 1.3 micrometers and 76.5% at 2 micrometers have been achieved in BP/Bi2O2Se vdW photodetectors.
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Affiliation(s)
- Yunfeng Chen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Congwei Tan
- Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
| | - Zhen Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Jinshui Miao
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xun Ge
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Tiange Zhao
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Kecai Liao
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Haonan Ge
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Yang Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Fang Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Yi Zhou
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Peng Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Xiaohao Zhou
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Chongxin Shan
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, School of Physics and Engineering, Zhengzhou University, Zhengzhou 450001, China
| | - Hailin Peng
- Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- University of Chinese Academy of Sciences, Beijing 100049, China
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23
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Fang W, Ou C, Li GX, Yang Y. Resonance fluorescence engineering in hybrid systems consist of biexciton quantum dots and anisotropic metasurfaces. OPTICS EXPRESS 2022; 30:27794-27811. [PMID: 36236942 DOI: 10.1364/oe.457907] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/08/2022] [Accepted: 06/23/2022] [Indexed: 06/16/2023]
Abstract
The resonance fluorescence properties in the steady-state regime are investigated for a driven cascaded exciton-biexciton quantum dot coupled to the two-dimensional black phosphorus metasurfaces. It is shown that for the material parameters under consideration, both the elliptic and hyperbolic dispersion patterns of the surface plasmon modes are achievable according to the variation of the carrier concentration. Further study on the Purcell factor indicates unequal enhancements in the spontaneous decay of the orthogonal in-plane dipoles. Motivated by this intriguing phenomenon, we then investigate the steady-state properties of the driven quantum dot, where the populations of the dressed levels are highly tunable by engineering the anisotropy of the surfaces. As a result, the manipulation of the carrier concentration will lead to strong modifications in the resonance fluorescence. Under certain conditions, one can observe the squeezing of two-mode noise spectra with different resonances and polarizations. Although at the expense of declines in the photon-sideband detunings, it is feasible to enhance the two-mode squeezing by gate doping. Our proposal can be easily extended to other hybrid systems containing anisotropic metasurfaces, which are important for the development of quantum information science.
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24
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Ultra-sensitive polarization-resolved black phosphorus homojunction photodetector defined by ferroelectric domains. Nat Commun 2022; 13:3198. [PMID: 35680950 PMCID: PMC9184637 DOI: 10.1038/s41467-022-30951-y] [Citation(s) in RCA: 36] [Impact Index Per Article: 18.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/05/2022] [Accepted: 05/18/2022] [Indexed: 11/09/2022] Open
Abstract
With the further miniaturization and integration of multi-dimensional optical information detection devices, polarization-sensitive photodetectors based on anisotropic low-dimension materials have attractive potential applications. However, the performance of these devices is restricted by intrinsic property of materials leading to a small polarization ratio of the detectors. Here, we construct a black phosphorus (BP) homojunction photodetector defined by ferroelectric domains with ultra-sensitive polarization photoresponse. With the modulation of ferroelectric field, the BP exhibits anisotropic dispersion changes, leading an increased photothermalelectric (PTE) current in the armchair (AC) direction. Moreover, the PN junction can promote the PTE current and accelerate carrier separation. As a result, the BP photodetector demonstrates an ultrahigh polarization ratio (PR) of 288 at 1450 nm incident light, a large photoresponsivity of 1.06 A/W, and a high detectivity of 1.27 × 1011 cmHz1/2W−1 at room temperature. This work reveals the great potential of BP in future polarized light detection. Integrated polarization-sensitive photodetectors are important for sensing applications and optical communication. Here, the authors report the realization of 2D black phosphorus homojunction photodetectors defined by ferroelectric substrates, showing polarization ratios up to 288 and high responsivity in the near-infrared.
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25
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Zhang K, Ren Z, Cao H, Li L, Wang Y, Zhang W, Li Y, Yang H, Meng Y, Ho JC, Wei Z, Shen G. Near-Infrared Polarimetric Image Sensors Based on Ordered Sulfur-Passivation GaSb Nanowire Arrays. ACS NANO 2022; 16:8128-8140. [PMID: 35511070 DOI: 10.1021/acsnano.2c01455] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The near-infrared polarimetric image sensor has a wide range of applications in the military and civilian fields, thus developing into a research hotspot in recent years. Because of their distinguishing 1D structure features, the ordered GaSb nanowire (NW) arrays possess potential applications for near-infrared polarization photodetection. In this work, single-crystalline GaSb NWs are synthesized through a sulfur-catalyzed chemical vapor deposition process. A sulfur-passivation thin layer is formed on the NW surface, which prevents the GaSb NW core from being oxidized. The photodetector based on sulfur-passivation GaSb (S-GaSb) NWs has a lower dark current and higher responsivity than that built with pure GaSb NWs. The photodetector exhibits a large responsivity of 9.39 × 102 A/W and an ultrahigh detectivity of 1.10 × 1011 Jones for 1.55 μm incident light. Furthermore, the dichroic ratio of the device is measured to reach 2.65 for polarized 1.55 μm light. Through a COMSOL simulation, it is elucidated that the origin of the polarized photoresponse is the attenuation of a light electric field inside the NW when the angle of incident polarization light rotates. Moreover, a flexible polarimetric image sensor with 5 × 5 pixels is successfully constructed on the ordered S-GaSb NW arrays, and it exhibits a good imaging ability for incident near-infrared polarization light. These good photoresponse properties and polarized imaging abilities can empower ordered S-GaSb NW arrays with technological potentials in next-generation large-scale near-infrared polarimetric imaging sensors.
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Affiliation(s)
- Kai Zhang
- Hebei Key Lab of Optic-electronic Information and Materials, the College of Physics Science and Technology, Hebei University, Baoding 071002, China
- Institute of Physics, Chinese Academy of Sciences and University of Chinese Academy of Sciences, Beijing 100190, China
| | - Zhihui Ren
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelxsectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Huichen Cao
- Hebei Key Lab of Optic-electronic Information and Materials, the College of Physics Science and Technology, Hebei University, Baoding 071002, China
| | - Lingling Li
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Ying Wang
- Hebei Key Lab of Optic-electronic Information and Materials, the College of Physics Science and Technology, Hebei University, Baoding 071002, China
| | - Wei Zhang
- Hebei Key Lab of Optic-electronic Information and Materials, the College of Physics Science and Technology, Hebei University, Baoding 071002, China
| | - Yubao Li
- Hebei Key Lab of Optic-electronic Information and Materials, the College of Physics Science and Technology, Hebei University, Baoding 071002, China
| | - Haitao Yang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - You Meng
- Department of Materials Science and Engineering, and State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Hong Kong 999077, China
| | - Johnny C Ho
- Department of Materials Science and Engineering, and State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Hong Kong 999077, China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Guozhen Shen
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
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26
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Li CY, Chen C, Liu Y, Su J, Qi DX, He J, Fan RH, Cai Q, Li Q, Peng R, Huang XR, Wang M. Multiple-polarization-sensitive photodetector based on a perovskite metasurface. OPTICS LETTERS 2022; 47:565-568. [PMID: 35103672 DOI: 10.1364/ol.441505] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/26/2021] [Accepted: 11/26/2021] [Indexed: 06/14/2023]
Abstract
Most polarization-sensitive photodetectors detect either linearly polarized (LP) or circularly polarized (CP) light. Here, we experimentally demonstrate a multiple-polarization photodetector based on a hybrid organic-inorganic perovskite (HOIP) metasurface, which is sensitive to both LP and CP light simultaneously. The perovskite metasurface is composed of a HOIP antenna array on a single-crystal HOIP film. Owing to the antenna anisotropy, the absorption of linearly polarized light at the metasurface depends on the polarization angle; also, due to the mirror asymmetry of the antenna elements, the metasurface is also sensitive to different circular polarizations. Polarization-dependent photocurrent responses to both LP and CP light are detected. Our results highlight the potential of perovskite metasurfaces for integrated photoelectric applications.
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27
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Wang Z, Luo P, Han B, Zhang X, Zhao S, Wang S, Chen X, Wei L, Yang S, Zhou X, Wang S, Tao X, Zhai T. Strong In-Plane Anisotropic SiP 2 as a IV-V 2D Semiconductor for Polarized Photodetection. ACS NANO 2021; 15:20442-20452. [PMID: 34860002 DOI: 10.1021/acsnano.1c08892] [Citation(s) in RCA: 16] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
In-plane anisotropic two-dimensional (2D) materials, emerging as an intriguing type of 2D family, provide an ideal platform for designing and fabrication of optoelectronic devices. Exploring air-stable and strong in-plane anisotropic 2D materials is still challenging and promising for polarized photodetection. Herein, SiP2, a 2D IV-V semiconductor, is successfully prepared and introduced into an in-plane anisotropic 2D family. The basic characterizations combined with theoretical calculations reveal 2D SiP2 to exhibit an intrinsically low-symmetry structure, the in-plane anisotropy of phonon vibrations, and an anisotropically dispersed band structure. Moreover, the photodetector based on 2D SiP2 exhibits high performance with a high detectivity of 1012 Jones, a large light on/off ratio of 103, a low dark current of 10-13 A, and a fast response speed of 3 ms. Furthermore, 2D SiP2 demonstrates a high anisotropic photodetection with an anisotropic ratio up to 2. In addition, the polarization-sensitive photodetector presents a dichroic ratio of 1.6 due to the intrinsic linear dichroism. These good characteristics make 2D SiP2 a promising candidate as an in-plane anisotropic semiconductor for high-sensitivity and polarized optoelectronic applications.
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Affiliation(s)
- Ziming Wang
- State Key Laboratory of Crystal Materials & Institute of Crystal Materials, Shandong University, Jinan 250100, China
| | - Peng Luo
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Bing Han
- State Key Laboratory of Crystal Materials & Institute of Crystal Materials, Shandong University, Jinan 250100, China
| | - Xiang Zhang
- State Key Laboratory of Crystal Materials & Institute of Crystal Materials, Shandong University, Jinan 250100, China
| | - Shuqi Zhao
- State Key Laboratory of Crystal Materials & Institute of Crystal Materials, Shandong University, Jinan 250100, China
| | - Shilei Wang
- State Key Laboratory of Crystal Materials & Institute of Crystal Materials, Shandong University, Jinan 250100, China
| | - Xiaohua Chen
- State Key Laboratory of Crystal Materials & Institute of Crystal Materials, Shandong University, Jinan 250100, China
| | - Limei Wei
- State Key Laboratory of Crystal Materials & Institute of Crystal Materials, Shandong University, Jinan 250100, China
| | - Sijie Yang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Xing Zhou
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Shanpeng Wang
- State Key Laboratory of Crystal Materials & Institute of Crystal Materials, Shandong University, Jinan 250100, China
| | - Xutang Tao
- State Key Laboratory of Crystal Materials & Institute of Crystal Materials, Shandong University, Jinan 250100, China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
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28
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Ahn J, Ko K, Kyhm JH, Ra HS, Bae H, Hong S, Kim DY, Jang J, Kim TW, Choi S, Kang JH, Kwon N, Park S, Ju BK, Poon TC, Park MC, Im S, Hwang DK. Near-Infrared Self-Powered Linearly Polarized Photodetection and Digital Incoherent Holography Using WSe 2/ReSe 2 van der Waals Heterostructure. ACS NANO 2021; 15:17917-17925. [PMID: 34677045 DOI: 10.1021/acsnano.1c06234] [Citation(s) in RCA: 16] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Polarization-sensitive photodetection has attracted considerable attention as an emerging technology for future optoelectronic applications such as three-dimensional (3D) imaging, quantum optics, and encryption. However, traditional photodetectors based on Si or III-V InGaAs semiconductors cannot directly detect polarized light without additional optical components. Herein, we demonstrate a self-powered linear-polarization-sensitive near-infrared (NIR) photodetector using a two-dimensional WSe2/ReSe2 van der Waals heterostructure. The WSe2/ReSe2 heterojunction photodiode with semivertical geometry exhibits excellent performance: an ideality factor of 1.67, a broad spectral photoresponse of 405-980 nm with a significant photovoltaic effect, outstanding linearity with a linear dynamic range wider than 100 dB, and rapid photoswitching behavior with a cutoff frequency up to 100 kHz. Strongly polarized excitonic transitions around the band edge in ReSe2 lead to significant 980 nm NIR linear-polarization-dependent photocurrent. This linear polarization sensitivity remains stable even after exposure to air for longer than five months. Furthermore, by leveraging the NIR (980 nm)-selective linear polarization detection of this photodiode under photovoltaic operation, we demonstrate digital incoherent holographic 3D imaging.
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Affiliation(s)
- Jongtae Ahn
- Center of Optoelectronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
- Van der Waals Materials Research Center, Institute of Physics and Applied Physics, Yonsei University, Seoul 03722, Republic of Korea
| | - Kyul Ko
- Center of Optoelectronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
- Display and Nanosystem Laboratory, College of Engineering, Korea University, Seoul 02841, Republic of Korea
| | - Ji-Hoon Kyhm
- Quantum-functional Semiconductor Research Center, Dongguk University, Seoul 04620, Republic of Korea
| | - Hyun-Soo Ra
- Center of Optoelectronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
| | - Heesun Bae
- Van der Waals Materials Research Center, Institute of Physics and Applied Physics, Yonsei University, Seoul 03722, Republic of Korea
| | - Sungjae Hong
- Van der Waals Materials Research Center, Institute of Physics and Applied Physics, Yonsei University, Seoul 03722, Republic of Korea
| | - Dae-Yeon Kim
- Center of Optoelectronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
| | - Jisu Jang
- Center of Optoelectronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
- Division of Nano & Information Technology, KIST School, University of Science and Technology (UST), Seoul 02792, Republic of Korea
| | - Tae Wook Kim
- Center of Optoelectronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
| | - Sungwon Choi
- Center of Optoelectronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
| | - Ji-Hoon Kang
- Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States
| | - Namhee Kwon
- Advanced Analysis Center, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
| | - Soohyung Park
- Advanced Analysis Center, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
| | - Byeong-Kwon Ju
- Display and Nanosystem Laboratory, College of Engineering, Korea University, Seoul 02841, Republic of Korea
| | - Ting-Chung Poon
- Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061, United States
| | - Min-Chul Park
- Center of Optoelectronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
- Division of Nano & Information Technology, KIST School, University of Science and Technology (UST), Seoul 02792, Republic of Korea
| | - Seongil Im
- Van der Waals Materials Research Center, Institute of Physics and Applied Physics, Yonsei University, Seoul 03722, Republic of Korea
| | - Do Kyung Hwang
- Center of Optoelectronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
- Division of Nano & Information Technology, KIST School, University of Science and Technology (UST), Seoul 02792, Republic of Korea
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29
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Zhao Q, Gao F, Chen H, Gao W, Xia M, Pan Y, Shi H, Su S, Fang X, Li J. High performance polarization-sensitive self-powered imaging photodetectors based on a p-Te/n-MoSe 2 van der Waals heterojunction with strong interlayer transition. MATERIALS HORIZONS 2021; 8:3113-3123. [PMID: 34545908 DOI: 10.1039/d1mh01287h] [Citation(s) in RCA: 18] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
In-plane anisotropic two-dimensional (2D) materials offer great opportunities for developing novel polarization sensitive photodetectors without being in conjunction with filters and polarizers. However, owing to low linear dichroism ratio and insufficient optical absorption of the few layer 2D materials, the comprehensive performance of the present polarization sensitive photodetectors based on 2D materials is still lower than the practical application requirements. In this work, after systematic investigation of the structural, vibrational, and optical anisotropies of layer-structured Te nanosheets, a novel polarization-sensitive self-powered imaging photodetector with high comprehensive performance based on a p-Te/n-MoSe2 van der Waals heterojunction (vdWH) with strong interlayer transition is proposed. Owing to the high rectification ratio (104) of the diode, the device shows excellent photovoltaic characteristics. As examples, the photodetectors exhibited an ultrahigh on/off ratio of 105 at a relatively weak light intensity (4.73 mw cm-2), and the highest responsivity of the device could reach 2106 mA W-1 without any power supply. In particular, benefitting from the excellent dichroism properties of Te nanosheets synthesized in this work, the anisotropic ratio of the photocurrent (Imax/Imin) could reach as high as 16.39 (405 nm, 24.2 mw cm-2). This value obtained under zero bias voltage is much greater than that of present 2D material photodetectors even at a bias voltage. In addition, the highest detectivity is 2.91 × 1013 Jones at a low bias voltage of -0.08 V. This work provides a novel building block for high resolution polarization-sensitive photodetection of weak signals in complex environments.
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Affiliation(s)
- Qixiao Zhao
- Institute of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, P. R. China.
- Guangdong Province Key Lab of Chip and Integration Technology, Guangzhou 510631, P. R. China
| | - Feng Gao
- Key Laboratory of Micro-systems and Micro-structures Manufacturing of Ministry of Education, Harbin Institute of Technology, Harbin 150080, P. R. China
| | - Hongyu Chen
- Institute of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, P. R. China.
- Guangdong Province Key Lab of Chip and Integration Technology, Guangzhou 510631, P. R. China
| | - Wei Gao
- Institute of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, P. R. China.
- Guangdong Province Key Lab of Chip and Integration Technology, Guangzhou 510631, P. R. China
| | - Mengjia Xia
- Institute of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, P. R. China.
- Guangdong Province Key Lab of Chip and Integration Technology, Guangzhou 510631, P. R. China
| | - Yuan Pan
- Institute of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, P. R. China.
- Guangdong Province Key Lab of Chip and Integration Technology, Guangzhou 510631, P. R. China
| | - Hongyan Shi
- Department of Physics, Harbin Institude of Technology, Harbin 150080, P. R. China
| | - Shichen Su
- Institute of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, P. R. China.
- Guangdong Province Key Lab of Chip and Integration Technology, Guangzhou 510631, P. R. China
- SCNU Qingyuan Institute of Science and Technology Innovation Co., Ltd, Qingyuan 511517, P. R. China
| | - Xiaosheng Fang
- Department of Materials Science, Fudan University, Shanghai 200433, P. R. China.
| | - Jingbo Li
- Institute of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, P. R. China.
- Guangdong Province Key Lab of Chip and Integration Technology, Guangzhou 510631, P. R. China
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Wang Y, Pang J, Cheng Q, Han L, Li Y, Meng X, Ibarlucea B, Zhao H, Yang F, Liu H, Liu H, Zhou W, Wang X, Rummeli MH, Zhang Y, Cuniberti G. Applications of 2D-Layered Palladium Diselenide and Its van der Waals Heterostructures in Electronics and Optoelectronics. NANO-MICRO LETTERS 2021; 13:143. [PMID: 34138389 PMCID: PMC8203759 DOI: 10.1007/s40820-021-00660-0] [Citation(s) in RCA: 20] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/31/2021] [Accepted: 05/11/2021] [Indexed: 05/07/2023]
Abstract
The rapid development of two-dimensional (2D) transition-metal dichalcogenides has been possible owing to their special structures and remarkable properties. In particular, palladium diselenide (PdSe2) with a novel pentagonal structure and unique physical characteristics have recently attracted extensive research interest. Consequently, tremendous research progress has been achieved regarding the physics, chemistry, and electronics of PdSe2. Accordingly, in this review, we recapitulate and summarize the most recent research on PdSe2, including its structure, properties, synthesis, and applications. First, a mechanical exfoliation method to obtain PdSe2 nanosheets is introduced, and large-area synthesis strategies are explained with respect to chemical vapor deposition and metal selenization. Next, the electronic and optoelectronic properties of PdSe2 and related heterostructures, such as field-effect transistors, photodetectors, sensors, and thermoelectric devices, are discussed. Subsequently, the integration of systems into infrared image sensors on the basis of PdSe2 van der Waals heterostructures is explored. Finally, future opportunities are highlighted to serve as a general guide for physicists, chemists, materials scientists, and engineers. Therefore, this comprehensive review may shed light on the research conducted by the 2D material community.
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Affiliation(s)
- Yanhao Wang
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, People's Republic of China
| | - Jinbo Pang
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Shandong, Jinan, 250022, People's Republic of China.
| | - Qilin Cheng
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Shandong, Jinan, 250022, People's Republic of China
| | - Lin Han
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, People's Republic of China.
| | - Yufen Li
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Shandong, Jinan, 250022, People's Republic of China
| | - Xue Meng
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, People's Republic of China
| | - Bergoi Ibarlucea
- Institute for Materials Science and Max Bergmann Center of Biomaterials, Technische Universität Dresden, 01069, Dresden, Germany
- Center for Advancing Electronics Dresden, Technische Universität Dresden, 01069, Dresden, Germany
- Dresden Center for Computational Materials Science, Technische Universität Dresden, 01062, Dresden, Germany
- Dresden Center for Intelligent Materials (GCL DCIM), Technische Universität Dresden, 01062, Dresden, Germany
| | - Hongbin Zhao
- State Key Laboratory of Advanced Materials for Smart Sensing, GRINM Group Co. Ltd., Xinwai Street 2, Beijing, 100088, People's Republic of China
| | - Feng Yang
- Department of Chemistry, Guangdong Provincial Key Laboratory of Catalytic Chemistry, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, People's Republic of China
| | - Haiyun Liu
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Shandong, Jinan, 250022, People's Republic of China
| | - Hong Liu
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Shandong, Jinan, 250022, People's Republic of China.
- State Key Laboratory of Crystal Materials, Center of Bio and Micro/Nano Functional Materials, Shandong University, 27 Shandanan Road, Jinan, 250100, People's Republic of China.
| | - Weijia Zhou
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Shandong, Jinan, 250022, People's Republic of China
| | - Xiao Wang
- Shenzhen Institutes of Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, 1068 Xueyuan Avenue, Shenzhen University Town, Shenzhen, 518055, People's Republic of China
| | - Mark H Rummeli
- College of Energy Soochow Institute for Energy and Materials Innovations, Soochow University, Suzhou, 215006, People's Republic of China
- Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, People's Republic of China
- Centre of Polymer and Carbon Materials, Polish Academy of Sciences, M. Curie Sklodowskiej 34, 41-819, Zabrze, Poland
- Institute for Complex Materials, IFW Dresden 20 Helmholtz Strasse, 01069, Dresden, Germany
- Institute of Environmental Technology VŠB-Technical University of Ostrava, 17. listopadu 15, Ostrava, 708 33, Czech Republic
| | - Yu Zhang
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, People's Republic of China.
| | - Gianaurelio Cuniberti
- Institute for Materials Science and Max Bergmann Center of Biomaterials, Technische Universität Dresden, 01069, Dresden, Germany
- Center for Advancing Electronics Dresden, Technische Universität Dresden, 01069, Dresden, Germany
- Dresden Center for Computational Materials Science, Technische Universität Dresden, 01062, Dresden, Germany
- Dresden Center for Intelligent Materials (GCL DCIM), Technische Universität Dresden, 01062, Dresden, Germany
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Liu C, Guo J, Yu L, Li J, Zhang M, Li H, Shi Y, Dai D. Silicon/2D-material photodetectors: from near-infrared to mid-infrared. LIGHT, SCIENCE & APPLICATIONS 2021; 10:123. [PMID: 34108443 PMCID: PMC8190178 DOI: 10.1038/s41377-021-00551-4] [Citation(s) in RCA: 69] [Impact Index Per Article: 23.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/19/2020] [Revised: 04/21/2021] [Accepted: 05/06/2021] [Indexed: 05/06/2023]
Abstract
Two-dimensional materials (2DMs) have been used widely in constructing photodetectors (PDs) because of their advantages in flexible integration and ultrabroad operation wavelength range. Specifically, 2DM PDs on silicon have attracted much attention because silicon microelectronics and silicon photonics have been developed successfully for many applications. 2DM PDs meet the imperious demand of silicon photonics on low-cost, high-performance, and broadband photodetection. In this work, a review is given for the recent progresses of Si/2DM PDs working in the wavelength band from near-infrared to mid-infrared, which are attractive for many applications. The operation mechanisms and the device configurations are summarized in the first part. The waveguide-integrated PDs and the surface-illuminated PDs are then reviewed in details, respectively. The discussion and outlook for 2DM PDs on silicon are finally given.
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Affiliation(s)
- Chaoyue Liu
- State Key Laboratory for Modern Optical Instrumentation, Zhejiang Provincial Key Laboratory for Sensing Technologies, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, Hangzhou, 310058, China
| | - Jingshu Guo
- State Key Laboratory for Modern Optical Instrumentation, Zhejiang Provincial Key Laboratory for Sensing Technologies, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, Hangzhou, 310058, China
| | - Laiwen Yu
- State Key Laboratory for Modern Optical Instrumentation, Zhejiang Provincial Key Laboratory for Sensing Technologies, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, Hangzhou, 310058, China
| | - Jiang Li
- State Key Laboratory for Modern Optical Instrumentation, Zhejiang Provincial Key Laboratory for Sensing Technologies, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, Hangzhou, 310058, China
| | - Ming Zhang
- State Key Laboratory for Modern Optical Instrumentation, Zhejiang Provincial Key Laboratory for Sensing Technologies, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, Hangzhou, 310058, China
- Ningbo Research Institute, Zhejiang University, Ningbo, 315100, China
| | - Huan Li
- State Key Laboratory for Modern Optical Instrumentation, Zhejiang Provincial Key Laboratory for Sensing Technologies, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, Hangzhou, 310058, China
| | - Yaocheng Shi
- State Key Laboratory for Modern Optical Instrumentation, Zhejiang Provincial Key Laboratory for Sensing Technologies, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, Hangzhou, 310058, China
- Ningbo Research Institute, Zhejiang University, Ningbo, 315100, China
| | - Daoxin Dai
- State Key Laboratory for Modern Optical Instrumentation, Zhejiang Provincial Key Laboratory for Sensing Technologies, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, Hangzhou, 310058, China.
- Ningbo Research Institute, Zhejiang University, Ningbo, 315100, China.
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32
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Wang L, Wang B, Zhang Y, Meng L, Sun H, Liu T, Zhang N, Jiang Z, Hu H. Infrared broadband enhancement of responsivity in Ge photodetectors decorated with Au nanoparticles. OPTICS EXPRESS 2021; 29:12941-12949. [PMID: 33985039 DOI: 10.1364/oe.423899] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/02/2021] [Accepted: 04/05/2021] [Indexed: 06/12/2023]
Abstract
A broadband, high-performance infrared Ge photodetector decorated with Au nanoparticles (NPs) is proposed. Photoelectronic characterization demonstrated that the responsivity of devices decorated with Au NPs is as high as 3.95 A/W at a wavelength of 1550 nm. Compared with a Ge photodetector without Au NPs, the responsivity of a device decorated with Au NPs is significantly increased, i.e., by more than 10 times in the entire range of infrared communication wavelengths, including the O, E, S, C, L, and U bands. The increase is ascribed to type-II energy-band alignment between Ge covered with Au NPs and bare Ge, instead of the localized surface-plasmon-resonance effect. The type-II energy-band alignment enhances the spatial electron-hole separation and restrains the electron-hole recombination, thus a larger photocurrent is observed. These results reflect the potential of this approach for achieving broadband, high-performance Ge photodetectors operating in the near-infrared communication band.
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33
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Yang Y, Liu SC, Li Z, Xue DJ, Hu JS. In-plane anisotropic 2D Ge-based binary materials for optoelectronic applications. Chem Commun (Camb) 2021; 57:565-575. [DOI: 10.1039/d0cc04476h] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/29/2022]
Abstract
In-plane anisotropic two-dimensional (2D) materials possess unique in-plane anisotropic physical properties arising from their low crystal lattice symmetry.
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Affiliation(s)
- Yusi Yang
- Beijing National Laboratory for Molecular Sciences (BNLMS)
- CAS Key Laboratory of Molecular Nanostructure and Nanotechnology
- Institute of Chemistry
- Chinese Academy of Sciences
- Beijing 100190
| | - Shun-Chang Liu
- Beijing National Laboratory for Molecular Sciences (BNLMS)
- CAS Key Laboratory of Molecular Nanostructure and Nanotechnology
- Institute of Chemistry
- Chinese Academy of Sciences
- Beijing 100190
| | - Zongbao Li
- School of Material and Chemical Engineering
- Tongren University
- Tongren 554300
- China
- National Engineering Research Center for Advanced Polymer Processing Technology
| | - Ding-Jiang Xue
- Beijing National Laboratory for Molecular Sciences (BNLMS)
- CAS Key Laboratory of Molecular Nanostructure and Nanotechnology
- Institute of Chemistry
- Chinese Academy of Sciences
- Beijing 100190
| | - Jin-Song Hu
- Beijing National Laboratory for Molecular Sciences (BNLMS)
- CAS Key Laboratory of Molecular Nanostructure and Nanotechnology
- Institute of Chemistry
- Chinese Academy of Sciences
- Beijing 100190
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34
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Du J, Yu H, Liu B, Hong M, Liao Q, Zhang Z, Zhang Y. Strain Engineering in 2D Material-Based Flexible Optoelectronics. SMALL METHODS 2021; 5:e2000919. [PMID: 34927808 DOI: 10.1002/smtd.202000919] [Citation(s) in RCA: 40] [Impact Index Per Article: 13.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/28/2020] [Revised: 11/22/2020] [Indexed: 06/14/2023]
Abstract
Flexible optoelectronics, as promising components hold shape-adaptive features and dynamic strain response under strain engineering for various intelligent applications. 2D materials with atomically thin layers are ideal for flexible optoelectronics because of their high flexibility and strain sensitivity. However, how the strain affects the performance of 2D materials-based flexible optoelectronics is confused due to their hypersensitive features to external strain changes. It is necessary to establish an evaluation system to comprehend the influence of the external strain on the intrinsic properties of 2D materials and the photoresponse performance of their flexible optoelectronics. Here, a focused review of strain engineering in 2D materials-based flexible optoelectronics is provided. The first attention is on the mechanical properties and the strain-engineered electronic properties of 2D semiconductors. An evaluation system with relatively comprehensive parameters in functionality and service capability is summarized to develop 2D materials-based flexible optoelectronics in practical application. Based on the parameters, some strategies to improve the functionality and service capability are proposed. Finally, combining with strain engineering in future intelligence devices, the challenges and future perspective developing 2D materials-based flexible optoelectronics are expounded.
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Affiliation(s)
- Junli Du
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Huihui Yu
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Baishan Liu
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Mengyu Hong
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Qingliang Liao
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Zheng Zhang
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Municipal Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Yue Zhang
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Municipal Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
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35
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Liu B, Su Y, Wu S, Shen J. Two dimensional BP@AuNP nanocomposites for photothermal/photodynamic therapy mediated wound disinfection and infected wound healing under a single light source. NEW J CHEM 2021. [DOI: 10.1039/d1nj03137f] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/18/2022]
Abstract
BP@AuNP nanocomposites can perform photothermal and photodynamic therapies simultaneously and exhibited a synergistic combination of multiple therapies for S. aureus and E. coli under a 650 nm laser.
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Affiliation(s)
- Baolei Liu
- School of Chemistry and Chemical Engineering, Nanjing University, 163 Xianlin Avenue, Qixia District, Nanjing 210023, China
| | - Yutian Su
- School of Chemistry and Chemical Engineering, Nanjing University, 163 Xianlin Avenue, Qixia District, Nanjing 210023, China
| | - Shishan Wu
- School of Chemistry and Chemical Engineering, Nanjing University, 163 Xianlin Avenue, Qixia District, Nanjing 210023, China
| | - Jian Shen
- School of Chemistry and Chemical Engineering, Nanjing University, 163 Xianlin Avenue, Qixia District, Nanjing 210023, China
- National and Local Joint Engineering Research Center of Biomedical Functional Materials, Nanjing Normal University, Nanjing 210046, China
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36
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Wei J, Li Y, Wang L, Liao W, Dong B, Xu C, Zhu C, Ang KW, Qiu CW, Lee C. Zero-bias mid-infrared graphene photodetectors with bulk photoresponse and calibration-free polarization detection. Nat Commun 2020; 11:6404. [PMID: 33335090 PMCID: PMC7747747 DOI: 10.1038/s41467-020-20115-1] [Citation(s) in RCA: 46] [Impact Index Per Article: 11.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/15/2020] [Accepted: 11/16/2020] [Indexed: 01/27/2023] Open
Abstract
Bulk photovoltaic effect (BPVE), featuring polarization-dependent uniform photoresponse at zero external bias, holds potential for exceeding the Shockley-Queisser limit in the efficiency of existing opto-electronic devices. However, the implementation of BPVE has been limited to the naturally existing materials with broken inversion symmetry, such as ferroelectrics, which suffer low efficiencies. Here, we propose metasurface-mediated graphene photodetectors with cascaded polarization-sensitive photoresponse under uniform illumination, mimicking an artificial BPVE. With the assistance of non-centrosymmetric metallic nanoantennas, the hot photocarriers in graphene gain a momentum upon their excitation and form a shift current which is nonlocal and directional. Thereafter, we demonstrate zero-bias uncooled mid-infrared photodetectors with three orders higher responsivity than conventional BPVE and a noise equivalent power of 0.12 nW Hz−1/2. Besides, we observe a vectorial photoresponse which allows us to detect the polarization angle of incident light with a single device. Our strategy opens up alternative possibilities for scalable, low-cost, multifunctional infrared photodetectors. Here, graphene-based plasmonic metamaterials are used to generate an artificial bulk photovoltaic effect, enabling the realization of mid-infrared photodetectors with enhanced responsivity and calibration-free polarization detection at room temperature.
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Affiliation(s)
- Jingxuan Wei
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore.,Center for Intelligent Sensors and MEMS, National University of Singapore, Singapore, 117608, Singapore
| | - Ying Li
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Lin Wang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore
| | - Wugang Liao
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore
| | - Bowei Dong
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore.,Center for Intelligent Sensors and MEMS, National University of Singapore, Singapore, 117608, Singapore
| | - Cheng Xu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore.,Center for Intelligent Sensors and MEMS, National University of Singapore, Singapore, 117608, Singapore
| | - Chunxiang Zhu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore
| | - Kah-Wee Ang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore
| | - Cheng-Wei Qiu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore.
| | - Chengkuo Lee
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore. .,Center for Intelligent Sensors and MEMS, National University of Singapore, Singapore, 117608, Singapore.
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37
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Li Z, Fu Q, Ye J, Ge X, Wang J, Song J, Yang H. Ag + -Coupled Black Phosphorus Vesicles with Emerging NIR-II Photoacoustic Imaging Performance for Cancer Immune-Dynamic Therapy and Fast Wound Healing. Angew Chem Int Ed Engl 2020; 59:22202-22209. [PMID: 32841465 DOI: 10.1002/anie.202009609] [Citation(s) in RCA: 48] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/20/2020] [Indexed: 12/24/2022]
Abstract
A silver-ion-coupled black phosphorus (BP) vesicle (BP Ve-Ag+ ) with a second near infrared (NIR-II) window photoacoustic (PA) imaging capability was firstly constructed to maximize the potential of BP quantum dot (QD) in deeper bioimaging and diversified therapy. The embedded Ag+ could improve the relatively large band gap of BP QD via intense charge coupling based on theoretical simulation results, subsequently leading to the enhanced optical absorption capability, accompanied with the occurrence of the strong NIR-II PA signal. Guiding by NIR-II PA bioimaging, the hidden Ag+ could be precisely released with the disassembly of Ve during photodynamic therapy process and captured by macrophages located in lesion region for arousing synergistic cancer photodynamic/Ag+ immunotherapy. BP Ve-Ag+ can contrapuntally kill pathogenic bacteria and accelerate wound healing monitored by NIR-II PA imaging.
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Affiliation(s)
- Zhi Li
- MOE Key Laboratory for Analytical Science of Food Safety and Biology, College of Chemistry, Fuzhou University, Fuzhou, 350108, P. R. China
| | - Qinrui Fu
- MOE Key Laboratory for Analytical Science of Food Safety and Biology, College of Chemistry, Fuzhou University, Fuzhou, 350108, P. R. China
| | - Jiamin Ye
- MOE Key Laboratory for Analytical Science of Food Safety and Biology, College of Chemistry, Fuzhou University, Fuzhou, 350108, P. R. China
| | - Xiaoguang Ge
- MOE Key Laboratory for Analytical Science of Food Safety and Biology, College of Chemistry, Fuzhou University, Fuzhou, 350108, P. R. China
| | - Jie Wang
- MOE Key Laboratory for Analytical Science of Food Safety and Biology, College of Chemistry, Fuzhou University, Fuzhou, 350108, P. R. China
| | - Jibin Song
- MOE Key Laboratory for Analytical Science of Food Safety and Biology, College of Chemistry, Fuzhou University, Fuzhou, 350108, P. R. China
| | - Huanghao Yang
- MOE Key Laboratory for Analytical Science of Food Safety and Biology, College of Chemistry, Fuzhou University, Fuzhou, 350108, P. R. China
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38
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Li Z, Fu Q, Ye J, Ge X, Wang J, Song J, Yang H. Ag
+
‐Coupled Black Phosphorus Vesicles with Emerging NIR‐II Photoacoustic Imaging Performance for Cancer Immune‐Dynamic Therapy and Fast Wound Healing. Angew Chem Int Ed Engl 2020. [DOI: 10.1002/ange.202009609] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/14/2023]
Affiliation(s)
- Zhi Li
- MOE Key Laboratory for Analytical Science of Food Safety and Biology College of Chemistry Fuzhou University Fuzhou 350108 P. R. China
| | - Qinrui Fu
- MOE Key Laboratory for Analytical Science of Food Safety and Biology College of Chemistry Fuzhou University Fuzhou 350108 P. R. China
| | - Jiamin Ye
- MOE Key Laboratory for Analytical Science of Food Safety and Biology College of Chemistry Fuzhou University Fuzhou 350108 P. R. China
| | - Xiaoguang Ge
- MOE Key Laboratory for Analytical Science of Food Safety and Biology College of Chemistry Fuzhou University Fuzhou 350108 P. R. China
| | - Jie Wang
- MOE Key Laboratory for Analytical Science of Food Safety and Biology College of Chemistry Fuzhou University Fuzhou 350108 P. R. China
| | - Jibin Song
- MOE Key Laboratory for Analytical Science of Food Safety and Biology College of Chemistry Fuzhou University Fuzhou 350108 P. R. China
| | - Huanghao Yang
- MOE Key Laboratory for Analytical Science of Food Safety and Biology College of Chemistry Fuzhou University Fuzhou 350108 P. R. China
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39
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Characterisation and Manipulation of Polarisation Response in Plasmonic and Magneto-Plasmonic Nanostructures and Metamaterials. Symmetry (Basel) 2020. [DOI: 10.3390/sym12081365] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/09/2023] Open
Abstract
Optical properties of metal nanostructures, governed by the so-called localised surface plasmon resonance (LSPR) effects, have invoked intensive investigations in recent times owing to their fundamental nature and potential applications. LSPR scattering from metal nanostructures is expected to show the symmetry of the oscillation mode and the particle shape. Therefore, information on the polarisation properties of the LSPR scattering is crucial for identifying different oscillation modes within one particle and to distinguish differently shaped particles within one sample. On the contrary, the polarisation state of light itself can be arbitrarily manipulated by the inverse designed sample, known as metamaterials. Apart from polarisation state, external stimulus, e.g., magnetic field also controls the LSPR scattering from plasmonic nanostructures, giving rise to a new field of magneto-plasmonics. In this review, we pay special attention to polarisation and its effect in three contrasting aspects. First, tailoring between LSPR scattering and symmetry of plasmonic nanostructures, secondly, manipulating polarisation state through metamaterials and lastly, polarisation modulation in magneto-plasmonics. Finally, we will review recent progress in applications of plasmonic and magneto-plasmonic nanostructures and metamaterials in various fields.
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Plasmonic-tape-attached multilayered MoS 2 film for near-infrared photodetection. Sci Rep 2020; 10:11340. [PMID: 32647248 PMCID: PMC7347569 DOI: 10.1038/s41598-020-68127-7] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/06/2020] [Accepted: 05/12/2020] [Indexed: 11/09/2022] Open
Abstract
Molybdenum disulfide has been intensively studied as a promising material for photodetector applications because of its excellent electrical and optical properties. We report a multilayer MoS2 film attached with a plasmonic tape for near-infrared (NIR) detection. MoS2 flakes are chemically exfoliated and transferred onto a polymer substrate, and silver nanoparticles (AgNPs) dewetted thermally on a substrate are transferred onto a Scotch tape. The Scotch tape with AgNPs is attached directly and simply onto the MoS2 flakes. Consequently, the NIR photoresponse of the MoS2 device is critically enhanced. The proposed tape transfer method enables the formation of plasmonic structures on arbitrary substrates, such as a polymer substrate, without requiring a high-temperature process. The performance of AgNPs-MoS2 photodetectors is approximately four times higher than that of bare MoS2 devices.
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Audhkhasi R, Povinelli ML. Gold-black phosphorus nanostructured absorbers for efficient light trapping in the mid-infrared. OPTICS EXPRESS 2020; 28:19562-19570. [PMID: 32672230 DOI: 10.1364/oe.398641] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/26/2020] [Accepted: 06/15/2020] [Indexed: 06/11/2023]
Abstract
We propose a gold nanostructured design for absorption enhancement in thin black phosphorus films in the 3-5 µm wavelength range. By suitably tuning the design parameters of a metal-insulator-metal (MIM) structure, lateral resonance modes can be excited in the black phosphorus layer. We compare the absorption enhancement due to the resonant light trapping effect to the conventional 4n2 limit. For a layer thickness of 5 nm, we achieve an enhancement factor of 561 at a wavelength of 4 µm. This is significantly greater than the conventional limit of 34. The ability to achieve strong absorption enhancement in ultrathin dielectric layers, coupled with the unique optoelectronic properties of black phosphorus, makes our absorber design a promising candidate for mid-IR photodetector applications.
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Dai Z, Hu G, Ou Q, Zhang L, Xia F, Garcia-Vidal FJ, Qiu CW, Bao Q. Artificial Metaphotonics Born Naturally in Two Dimensions. Chem Rev 2020; 120:6197-6246. [DOI: 10.1021/acs.chemrev.9b00592] [Citation(s) in RCA: 59] [Impact Index Per Article: 14.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Affiliation(s)
- Zhigao Dai
- Engineering Research Center of Nano-Geomaterials of Ministry of Education, Faculty of Materials Science and Chemistry, China University of Geosciences, 388 Lumo Road, Wuhan 430074, P.R. China
- Department of Materials Science and Engineering, ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), Monash University, Wellington Road, Clayton, Victoria 3800, Australia
| | - Guangwei Hu
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117583, Singapore
| | - Qingdong Ou
- Department of Materials Science and Engineering, ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), Monash University, Wellington Road, Clayton, Victoria 3800, Australia
| | - Lei Zhang
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education and Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, P.R. China
| | - Fengnian Xia
- Department of Electrical Engineering, Yale University, New Haven, Connecticut 06511, United States
| | - Francisco J. Garcia-Vidal
- Departamento de Fisica Teorica de la Materia Condensada and Condensed Matter Physics Center (IFIMAC), Universidad Autonoma de Madrid, Madrid 28049, Spain
- Donostia International Physics Center (DIPC), Donostia−San Sebastian E-20018, Spain
| | - Cheng-Wei Qiu
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117583, Singapore
| | - Qiaoliang Bao
- Department of Materials Science and Engineering, ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), Monash University, Wellington Road, Clayton, Victoria 3800, Australia
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Jiang Q, Du B, Jiang M, Liu D, Liu Z, Li B, Liu Z, Lin F, Zhu X, Fang Z. Ultrathin circular polarimeter based on chiral plasmonic metasurface and monolayer MoSe 2. NANOSCALE 2020; 12:5906-5913. [PMID: 32104821 DOI: 10.1039/c9nr10768a] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Two-dimensional materials are ideal platforms for intriguing physics and optoelectronic applications because of their ultrathin thicknesses and excellent properties in optics and electronics. Further studies on enhancing the interaction between light and two-dimensional materials by combining metallic nanostructures have generated broad interests in recent years, such as enhanced photoluminescence, strong coupling and functional optoelectronics. In this work, an ultrathin circular polarimeter consisting of chiral plasmonic metasurface and monolayer semiconductor is proposed to detect light with different circular polarization within a compact device. A designed chiral plasmonic metasurface with sub-wavelength thickness is integrated with monolayer MoSe2, and the circular-polarization-dependent photocurrent responses of right and left circularly polarized light for both left- and right-handed metasurfaces are experimentally demonstrated. The photoresponse circular dichroism is also obtained, which further indicates the remarkable performance of the proposed device in detecting and distinguishing circularly polarized light. This design offers a great potential to realize multifunctional measurements in an ultrathin and ultracompact two-dimensional device for future integrated optics and optoelectronic applications with circularly polarized light.
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Affiliation(s)
- Qiao Jiang
- School of Physics, State Key Lab for Mesoscopic Physics, Academy for Advanced Interdisciplinary Studies, Collaborative Innovation Center of Quantum Matter, and Nano-optoelectronics Frontier Center of Ministry of Education, Peking University, Beijing 100871, China.
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Xie Z, Duo Y, Lin Z, Fan T, Xing C, Yu L, Wang R, Qiu M, Zhang Y, Zhao Y, Yan X, Zhang H. The Rise of 2D Photothermal Materials beyond Graphene for Clean Water Production. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 7:1902236. [PMID: 32154070 PMCID: PMC7055570 DOI: 10.1002/advs.201902236] [Citation(s) in RCA: 87] [Impact Index Per Article: 21.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/20/2019] [Revised: 11/22/2019] [Indexed: 05/18/2023]
Abstract
Water shortage is one of the most concerning global challenges in the 21st century. Solar-inspired vaporization employing photothermal nanomaterials is considered to be a feasible and green technology for addressing the water challenge by virtue of abundant and clean solar energy. 2D nanomaterials aroused considerable attention in photothermal evaporation-induced water production owing to their large absorption surface, strong absorption in broadband solar spectrum, and efficient photothermal conversion. Herein, the recent progress of 2D nanomaterials-based photothermal evaporation, mainly including emerging Xenes (phosphorene, antimonene, tellurene, and borophene) and binary-enes (MXenes and transition metal dichalcogenides), is reviewed. Then, the optimization strategies for higher evaporation performance are summarized in terms of modulation of the intrinsic photothermal performance of 2D nanomaterials and design of the complete evaporation system. Finally, the challenges and prospective of various kinds of 2D photothermal nanomaterials are discussed in terms of the photothermal performance, stability, environmental influence, and cost. One important principle is that solutions for water challenges should not introduce new environmental and social problems. This Review aims to highlight the role of 2D photothermal nanomaterials in solving water challenges and provides a viable scheme toward the practical use in photothermal materials selection, design, and evaporation systems building.
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Affiliation(s)
- Zhongjian Xie
- Shenzhen Engineering Laboratory of Phosphorene and OptoelectronicsSZU‐NUS Collaborative Innovation Center for Optoelectronic Science & TechnologyInternational Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of EducationCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060China
| | - Yanhong Duo
- Shenzhen Engineering Laboratory of Phosphorene and OptoelectronicsSZU‐NUS Collaborative Innovation Center for Optoelectronic Science & TechnologyInternational Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of EducationCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060China
| | - Zhitao Lin
- Faculty of Information TechnologyMacau University of Science and TechnologyMacao519020P. R. China
| | - Taojian Fan
- Shenzhen Engineering Laboratory of Phosphorene and OptoelectronicsSZU‐NUS Collaborative Innovation Center for Optoelectronic Science & TechnologyInternational Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of EducationCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060China
| | - Chenyang Xing
- Shenzhen Engineering Laboratory of Phosphorene and OptoelectronicsSZU‐NUS Collaborative Innovation Center for Optoelectronic Science & TechnologyInternational Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of EducationCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060China
- Center for Stretchable Electronics and Nanoscale SystemsKey Laboratory of Optoelectronic Devices and Systems of Ministry of EducationCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060P. R. China
| | - Li Yu
- College of Health Science and Environmental EngineeringShenzhen Technology UniversityShenzhen518118China
| | - Renheng Wang
- College of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060China
| | - Meng Qiu
- Shenzhen Engineering Laboratory of Phosphorene and OptoelectronicsSZU‐NUS Collaborative Innovation Center for Optoelectronic Science & TechnologyInternational Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of EducationCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060China
| | - Yupeng Zhang
- Shenzhen Engineering Laboratory of Phosphorene and OptoelectronicsSZU‐NUS Collaborative Innovation Center for Optoelectronic Science & TechnologyInternational Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of EducationCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060China
| | - Yonghua Zhao
- State Key Laboratory of Quality Research in Chinese MedicineInstitute of Chinese Medical SciencesUniversity of MacauMacao519020P. R. China
| | - Xiaobing Yan
- College of Electron and Information EngineeringHebei UniversityBaoding071002P. R. China
| | - Han Zhang
- Shenzhen Engineering Laboratory of Phosphorene and OptoelectronicsSZU‐NUS Collaborative Innovation Center for Optoelectronic Science & TechnologyInternational Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of EducationCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060China
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Sun M, Hu H, Xie D, Sun Y, Xu J, Li W, Ren T, Zhu H. Gate stimulated high-performance MoS 2-In(OH) x Se phototransistor. NANOTECHNOLOGY 2020; 31:095203. [PMID: 31731285 DOI: 10.1088/1361-6528/ab5820] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Two-dimensional (2D) materials such as graphene and MoS2 have shown great potential in photodetection platforms. Photoresponsivity and photoresponse speed are two important parameters illustrating photodetector performances. Although various hybrid structures have been designed, the trade-off between photoresponsivity and photoresponse speed has not been well balanced. In this work, MoS2 film and In(OH) x Se nanoparticles are combined together to form the hybrid phototransistor. Utilizing both the photoconducting and photogating effects, the photoresponsivity increases about one order of magnitude with a value of 102 A W-1. The ratio of photocurrent and dark current increases to a value of 104. Considering the slow photo recovery speed, a 2 ms gate voltage pulse is applied after turning off the light, which results in a complete recovery of current. The photoconducting effect, photogating effect and gate voltage stimulation simultaneously promote the superior comprehensive photoresponse performances. This method can be further explored and utilized for realizing high performance photodetectors.
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Affiliation(s)
- Mengxing Sun
- Institute of Microelectronics & Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, People's Republic of China
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Li Z, Xu B, Liang D, Pan A. Polarization-Dependent Optical Properties and Optoelectronic Devices of 2D Materials. RESEARCH (WASHINGTON, D.C.) 2020; 2020:5464258. [PMID: 33029588 PMCID: PMC7521027 DOI: 10.34133/2020/5464258] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/22/2020] [Accepted: 07/26/2020] [Indexed: 01/12/2023]
Abstract
The development of optoelectronic devices requires breakthroughs in new material systems and novel device mechanisms, and the demand recently changes from the detection of signal intensity and responsivity to the exploration of sensitivity of polarized state information. Two-dimensional (2D) materials are a rich family exhibiting diverse physical and electronic properties for polarization device applications, including anisotropic materials, valleytronic materials, and other hybrid heterostructures. In this review, we first review the polarized-light-dependent physical mechanism in 2D materials, then present detailed descriptions in optical and optoelectronic properties, involving Raman shift, optical absorption, and light emission and functional optoelectronic devices. Finally, a comment is made on future developments and challenges. The plethora of 2D materials and their heterostructures offers the promise of polarization-dependent scientific discovery and optoelectronic device application.
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Affiliation(s)
- Ziwei Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Boyi Xu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Delang Liang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials and Engineering, Hunan University, Changsha, Hunan 410082, China
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Liu Y, Wu M, Sun Z, Yang S, Hu C, Huang L, Shen W, Wei B, Wang Z, Yang S, Ye Y, Li Y, Jiang C. Synthesis of low-symmetry 2D Ge (1-x)Sn xSe 2 alloy flakes with anisotropic optical response and birefringence. NANOSCALE 2019; 11:23116-23125. [PMID: 31789334 DOI: 10.1039/c9nr07820g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Low-symmetry two-dimensional (2D) materials with unique in-plane anisotropy can promote both fundamental science and practical applications in optics, optoelectronics, electronics, and polarization detection. As a member of 2D materials, doping/alloying material systems have gained great attention owing to the tunable bandgap and special properties. However, the in-plane anisotropic optical and electrical properties of these 2D alloy materials have rarely been reported. In this work, low-symmetry 2D Ge(1-x)SnxSe2 (x = 0-1.0) alloy flakes have been synthesized by chemical vapor deposition (CVD) with a bandgap varying from 1.55 eV (GeSe2, x = 0) to 1.90 eV (SnSe2, x = 1.0). Angle-resolved polarized Raman spectroscopy (ARPRS) is used to confirm the in-plane vibrational anisotropy, and azimuth-dependent reflectance difference microscopy (ADRDM) is applied to visualize the in-plane optical anisotropy. Polarization-dependent transmission spectroscopy (PDTS) is carried out to reflect the in-plane absorptional anisotropy and linear dichroism, and birefringence characteristics are also found in the subsequent studies. All of the results indicate the unique in-plane optical anisotropy and birefringence characteristics of the 2D Ge(1-x)SnxSe2 alloy flakes, providing new opportunities for polarization-controlled devices, optical wave plates, and polarizers.
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Affiliation(s)
- Yijun Liu
- School of Materials Science and Engineering, Beihang University, Beijing 100191, P. R. China.
| | - Minghui Wu
- Department of Physics, Southern University of Science and Technology, Shenzhen 518005, P. R. China
| | - Zhaoyang Sun
- State Key Laboratory of Precision Measuring Technology and Instruments, Tianjin University, Weijin Road, CN-300072 Tianjin, P. R. China
| | - Shengxue Yang
- School of Materials Science and Engineering, Beihang University, Beijing 100191, P. R. China.
| | - Chunguang Hu
- State Key Laboratory of Precision Measuring Technology and Instruments, Tianjin University, Weijin Road, CN-300072 Tianjin, P. R. China
| | - Li Huang
- Department of Physics, Southern University of Science and Technology, Shenzhen 518005, P. R. China
| | - Wanfu Shen
- State Key Laboratory of Precision Measuring Technology and Instruments, Tianjin University, Weijin Road, CN-300072 Tianjin, P. R. China
| | - Bin Wei
- Department of Quantum and Energy Materials, International Iberian Nanotechnology Laboratory (INL), Av. Mestre José Veiga s/n, Braga 4715-330, Portugal
| | - Zhongchang Wang
- Department of Quantum and Energy Materials, International Iberian Nanotechnology Laboratory (INL), Av. Mestre José Veiga s/n, Braga 4715-330, Portugal
| | - Shiqi Yang
- State Key Laboratory for Artificial Microstructure & Mesoscopic Physics, Nano-optoelectronics Frontier Center of the Ministry of Education, School of Physics, Peking University, Beijing 100871, China
| | - Yu Ye
- State Key Laboratory for Artificial Microstructure & Mesoscopic Physics, Nano-optoelectronics Frontier Center of the Ministry of Education, School of Physics, Peking University, Beijing 100871, China
| | - Yan Li
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, Shanxi 710049, China
| | - Chengbao Jiang
- School of Materials Science and Engineering, Beihang University, Beijing 100191, P. R. China.
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Qian Y, Yuan WE, Cheng Y, Yang Y, Qu X, Fan C. Concentrically Integrative Bioassembly of a Three-Dimensional Black Phosphorus Nanoscaffold for Restoring Neurogenesis, Angiogenesis, and Immune Homeostasis. NANO LETTERS 2019; 19:8990-9001. [PMID: 31790262 DOI: 10.1021/acs.nanolett.9b03980] [Citation(s) in RCA: 82] [Impact Index Per Article: 16.4] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2023]
Abstract
Black phosphorus is well known for its excellent electromechanical properties. Although it has previously been used for therapeutic drug delivery in cancer, it has never been applied as an electroactive polymer for post-trauma tissue regeneration (e.g., in cardiac muscles and neurons). The major concern currently preventing such applications is its controversial biosafety profile in vivo. Here, we demonstrate the production of a concentrically integrative layer-by-layer bioassembled black phosphorus nanoscaffold. This scaffold has remarkable electrical conductivity, permitting smooth release into the surrounding microenvironment. We confirmed that, under mild oxidative stress, our black phosphorus nanoscaffold induced angiogenesis and neurogenesis and stimulated calcium-dependent axon regrowth and remyelination. Long-term in vivo implantation of this nanoscaffold during severe neurological defect regeneration induced negligible toxicity levels. These results provide new insight into the regenerative capability of manufactured 3D scaffolds using neuroengineered 2D black phosphorus nanomaterials.
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Affiliation(s)
- Yun Qian
- Department of Orthopedics , Shanghai Jiao Tong University Affiliated Sixth People's Hospital , Shanghai 200233 , China
| | - Wei-En Yuan
- Engineering Research Center of Cell & Therapeutic Antibody, Ministry of Education, School of Pharmacy , Shanghai Jiao Tong University , Shanghai 200240 , China
| | - Yuan Cheng
- Engineering Research Center of Cell & Therapeutic Antibody, Ministry of Education, School of Pharmacy , Shanghai Jiao Tong University , Shanghai 200240 , China
| | - Yunqi Yang
- Engineering Research Center of Cell & Therapeutic Antibody, Ministry of Education, School of Pharmacy , Shanghai Jiao Tong University , Shanghai 200240 , China
- Department of Mechanical Engineering and Materials Science , Duke University , 144 Hudson Hall, Box 90300, Durham , North Carolina 27708 , United States
| | - Xinhua Qu
- Department of Bone and Joint Surgery, Renji Hospital, School of Medicine , Shanghai Jiao Tong University School of Medicine , Shanghai , China
| | - Cunyi Fan
- Department of Orthopedics , Shanghai Jiao Tong University Affiliated Sixth People's Hospital , Shanghai 200233 , China
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Dong D, Liu Y, Fan Y, Fei Y, Li J, Fu Y. Tunable THz reflection-type polarizer based on monolayer phosphorene. APPLIED OPTICS 2019; 58:9643-9650. [PMID: 31873564 DOI: 10.1364/ao.58.009643] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/09/2019] [Accepted: 10/28/2019] [Indexed: 06/10/2023]
Abstract
We demonstrate a tunable reflection-type polarizer in the terahertz (THz) regime formed by inserting a monolayer phosphorene in a Fabry-Perot cavity composed of a metal substrate and a distributed Bragg reflector. The physical mechanism of the polarizer is analyzed through the reflection spectrum, the electric field distribution, the energy flow, and the power dissipation density calculated by transfer-matrix method and finite-difference time-domain method. The results show that the polarization-selected reflection is caused by the in-plane anisotropic absorption of the phosphorene due to its special atomic lattice, and the polarization selection is further enhanced by the cavity resonator. A polarized reflection light can be obtained with a polarizing extinction ratio of more than 20 dB and a total reflectivity around 50% in the designed THz frequency. The operation frequency of the polarizer can be tuned by the angle of the incident light, the doping electron concentration, and the uniaxial strains of the phosphorene. The refection-type polarizer provides many applications such as filters, detectors, and biosensors.
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Wang J, Sheng Y, Sun H, Gao F, Zhang D, Zheng Y, Shi Y. Enhanced polarization photodetection of metallic cavity ensemble through spontaneously configured lateral electrodes. NANOTECHNOLOGY 2019; 30:495204. [PMID: 31491775 DOI: 10.1088/1361-6528/ab4245] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Metallic cavities show substantial advantages in light confinement, providing opportunities to modulate the optical resonances and absorption. Here, we report on the configuration of horizontally aligned ZnO-nanowires-based metallic cavity ensemble with a light to dark current ratio of ∼1000. An enhanced polarization photodetection ratio of transverse electric (TE) to transverse magnetic (TM) was experimentally observed compared to the single ZnO nanowire photodetector. Finite difference time domain simulation was performed on the metallic cavities, showing the distinct resonance behaviors under TE and TM light. The confinement by the multi-reflection and optical resonances between the metallic claddings contribute to the high anisotropy ratio. Furthermore, the polarized light absorption in the metallic cavity was studied as well as in the naked nanowire, which reveal a significant dependence on the cavity diameter and wavelength. For the metallic cavities, the absorption ratio of TE to TM show an enhanced value in the range of 300-500 nm wavelength and 85-150 diameter and a reversed value in the range of 400-500 nm wavelength and 17-50 diameter. While for the naked nanowires, the ratio show an apparently opposite value in these two regions. The presented metallic cavities demonstrate a specific paradigm of optical engineering in nanoscale and potentially helps the development of optoelectronic devices.
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Affiliation(s)
- Jianyu Wang
- Department of Physics, Nanchang University, Nanchang 330031, People's Republic of China. Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science & Engineering, Nanjing University, Nanjing 210093, People's Republic of China
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