Plasmonic Resonance Enhanced Polarization-Sensitive Photodetection by Black Phosphorus in Near Infrared

Enhanced Photogating Gain in Scalable MoS2 Plasmonic Photodetectors via Resonant Plasmonic Metasurfaces

Absorption of photons in atomically thin materials has become a challenge in the realization of ultrathin, high-performance optoelectronics. While numerous schemes have been used to enhance absorption in 2D semiconductors, such enhanced device performance in scalable monolayer photodetectors remains unattained. Here, we demonstrate wafer-scale integration of monolayer single-crystal MoS2 photodetectors with a nitride-based resonant plasmonic metasurface to achieve a high detectivity of 2.58 × 1012 Jones with a record-low dark current of 8 pA and long-term stability over 40 days. Upon comparison with control devices, we observe an overall enhancement factor of >100; this can be attributed to the local strong EM field enhanced photogating effect by the resonant plasmonic metasurface. Considering the compatibility of 2D semiconductors and hafnium nitride with the Si CMOS process and their scalability across wafer sizes, our results facilitate the smooth incorporation of 2D semiconductor-based photodetectors into the fields of imaging, sensing, and optical communication applications.

Low-Dimensional-Materials-Based Photodetectors for Next-Generation Polarized Detection and Imaging

The vector characteristics of light and the vectorial transformations during its transmission lay a foundation for polarized photodetection of objects, which broadens the applications of related detectors in complex environments. With the breakthrough of low-dimensional materials (LDMs) in optics and electronics over the past few years, the combination of these novel LDMs and traditional working modes is expected to bring new development opportunities in this field. Here, the state-of-the-art progress of LDMs, as polarization-sensitive components in polarized photodetection and even the imaging, is the main focus, with emphasis on the relationship between traditional working principle of polarized photodetectors (PPs) and photoresponse mechanisms of LDMs. Particularly, from the view of constitutive equations, the existing works are reorganized, reclassified, and reviewed. Perspectives on the opportunities and challenges are also discussed. It is hoped that this work can provide a more general overview in the use of LDMs in this field, sorting out the way of related devices for "more than Moore" or even the "beyond Moore" research.

Strong In-Plane Optoelectronic Anisotropy and Polarization Sensitivity in Low-Symmetry 2D Violet Phosphorus

Anisotropic optoelectronics based on low-symmetry two-dimensional (2D) materials hold immense potential for enabling multidimensional visual perception with improved miniaturization and integration capabilities, which has attracted extensive interest in optical communication, high-gain photoswitching circuits, and polarization imaging fields. However, the reported in-plane anisotropic photocurrent and polarized dichroic ratios are limited, hindering the achievement of high-performance anisotropic optoelectronics. In this study, we introduce novel low-symmetry violet phosphorus (VP) with a unique tubular cross-linked structure into this realm, and the corresponding anisotropic optical and optoelectronic properties are investigated both experimentally and theoretically for the first time. Remarkably, our prepared VP-based van der Waals phototransistor exhibits significant optoelectronic anisotropies with a giant in-plane anisotropic photocurrent ratio exceeding 10 and a comparable polarized dichroic ratio of 2.16, which is superior to those of most reported 2D counterparts. Our findings establish VP as an exceptional candidate for anisotropic optoelectronics, paving the way for future multifunctional applications.

Black Phosphorus Molybdenum Disulfide Midwave Infrared Photodiodes with Broadband Absorption-Increasing Metasurfaces

Black phosphorus (BP) has been established as a promising material for room temperature midwave infrared (MWIR) photodetectors. However, many of its attractive optoelectronic properties are often observable only at smaller film thicknesses, which inhibits photodetector absorption and performance. In this work, we show that metasurface gratings increase the absorption of BP-MoS2 heterojunction photodiodes over a broad range of wavelengths in the MWIR. We designed, fabricated, and characterized metasurface gratings that increase absorption at selected wavelengths or broad spectral ranges. We evaluated the broadband metasurfaces by measuring the room temperature responsivity and specific detectivity of BP-MoS2 photodiodes at multiple MWIR wavelengths. Our results show that broadband metasurface gratings are a scalable approach for boosting the performance of BP photodiodes over large spectral ranges.

p-Type Two-Dimensional Semiconductors: From Materials Preparation to Electronic Applications

Two-dimensional (2D) materials are regarded as promising candidates in many applications, including electronics and optoelectronics, because of their superior properties, including atomic-level thickness, tunable bandgaps, large specific surface area, and high carrier mobility. In order to bring 2D materials from the laboratory to industrialized applications, materials preparation is the first prerequisite. Compared to the n-type analogs, the family of p-type 2D semiconductors is relatively small, which limits the broad integration of 2D semiconductors in practical applications such as complementary logic circuits. So far, many efforts have been made in the preparation of p-type 2D semiconductors. In this review, we overview recent progresses achieved in the preparation of p-type 2D semiconductors and highlight some promising methods to realize their controllable preparation by following both the top-down and bottom-up strategies. Then, we summarize some significant application of p-type 2D semiconductors in electronic and optoelectronic devices and their superiorities. In end, we conclude the challenges existed in this field and propose the potential opportunities in aspects from the discovery of novel p-type 2D semiconductors, their controlled mass preparation, compatible engineering with silicon production line, high-κ dielectric materials, to integration and applications of p-type 2D semiconductors and their heterostructures in electronic and optoelectronic devices. Overall, we believe that this review will guide the design of preparation systems to fulfill the controllable growth of p-type 2D semiconductors with high quality and thus lay the foundations for their potential application in electronics and optoelectronics.

Giant Polarization Sensitivity via the Anomalous Photovoltaic Effect in a Two-Dimensional Perovskite Ferroelectric

Polarization sensitivity, which shows great potential in photoelectric detection, is expected to be significantly improved by the ferroelectric anomalous photovoltaic (APV) effect. However, it is challenging to explore new APV-active ferroelectrics due to severe polarization fatigue induced by the leakage current of photoexcited carriers. For the first time, we report a strong APV effect in a 2D hybrid perovskite ferroelectric assembled by alloying mixed organic cations, (HA)₂(EA)₂Pb₃Br₁₀ (1, where HA⁺ is n-hexylammonium and EA⁺ is ethylammonium), which has a large spontaneous polarization ∼3.8 μC/cm² and high a Curie temperature ∼378 K. Its ferroelectricity allows a strong APV effect with an above-bandgap photovoltage up to 7.4 V, which exceeds its bandgap (∼2.7 eV). Most strikingly, based on the dependence on polarized-light angle, this strong APV effect renders the highest level of polarization sensitivity with a giant current ratio of ∼25, far beyond other 2D single-phase materials. This study sheds light on the exploration of APV-active ferroelectrics and inspires their future high-performance optoelectronic device applications.

Strong interlayer coupling and unusual antisite defect-mediated p-type conductivity in GePx (x = 1, 2)

As an emerging candidate for anisotropic two-dimensional materials, the group IV-V family (e.g. GeP, GeP₂) has appealing applications in photoelectronics. However, their intrinsic point defect properties, which largely determine the device performance and optimization, are still poorly explored. In our study, through density functional theory (DFT) calculations, antisite defects were affirmed to be dominant with the lowest formation energies in 2D GeP_x semiconductors because of the similar atomic size and electronegativity of elemental components, which is in contrast to previous calculations and experimental speculation. These antisite defects could introduce relatively shallow states within the bandgap in bulk cases. The transition energy levels and electronic structures of defects reveal that Ge_P and P_Ge antisites act as dominant acceptors and donors, respectively. Strong interlayer coupling between anions results in a significant upshift of the valence band maximum (VBM) and shallower acceptor behaviors of GeP_x. Together with the dominant Ge_P antisite defect, the large upshift of the VBM in GeP leads to a remarkable transition of conductivity from intrinsic in the monolayer to p-type in the bulk. Such a synergistic effect in GeP₂ is rather weak due to the strong inherent intralayer coupling of anions. Our research provides deep insights into the strong anion coupling effects on the electronic structures and defect properties of GeP and GeP₂, which sheds light on defect engineering and electronic applications of GeP_x based semiconductors.

Tissue-Engineered Nanomaterials Play Diverse Roles in Bone Injury Repair

Nanomaterials with bone-mimicking characteristics and easily internalized by the cell could create suitable microenvironments in which to regulate the therapeutic effects of bone regeneration. This review provides an overview of the current state-of-the-art research in developing and using nanomaterials for better bone injury repair. First, an overview of the hierarchical architecture from the macroscale to the nanoscale of natural bone is presented, as these bone tissue microstructures and compositions are the basis for constructing bone substitutes. Next, urgent clinical issues associated with bone injury that require resolution and the potential of nanomaterials to overcome them are discussed. Finally, nanomaterials are classified as inorganic or organic based on their chemical properties. Their basic characteristics and the results of related bone engineering studies are described. This review describes theoretical and technical bases for the development of innovative methods for repairing damaged bone and should inspire therapeutic strategies with potential for clinical applications.

Plasmonic Enhanced Nanocrystal Infrared Photodetectors

Low-dimensional nanomaterials are widely investigated in infrared photodetectors (PDs) due to their excellent optical and electrical properties. To further improve the PDs property like quantum efficiency, metallic microstructures are commonly used, which could squeeze light into sub-diffraction volumes for enhanced absorption through surface plasma exciton resonance effects. In recent years, plasmonic enhanced nanocrystal infrared PDs have shown excellent performance and attracted much research interest. In this paper, we summarize the progress in plasmonic enhanced nanocrystal infrared PDs based on different metallic structures. We also discuss challenges and prospects in this field.

Near-infrared polarization-sensitive photodetection via interfacial symmetry engineering of an Si/MAPbI3 heterostructural single crystal

Methylammonium lead iodide (MAPbI₃) single crystals (SCs) have drawn particular attention in the optoelectronics field, due to their outstanding photoelectric performance. However, the structures of those MAPbI₃ SCs are isotropic, which limits the further application of the materials for polarization-sensitive photodetection. Here, we propose a strategy of symmetry modulation by heterogeneously integrating large-sized MAPbI₃ SCs with silicon (Si) wafers and we give the first demonstration of self-powered near-infrared (NIR) polarization-sensitive photodetection using MAPbI₃ SCs. Created via a delicate solution method, the MAPbI₃/Si heterostructures show a high crystalline quality and a solid interfacial connection. More importantly, the built-in electric field resulting from the band bending at the MAPbI₃/Si heterostructure interface generates polar symmetry, which enables directional transport of photogenerated carriers, making the MAPbI₃/Si heterostructures highly polarization-sensitive. Consequently, in the self-powered mode, NIR photodetectors of MAPbI₃/Si heterostructures exhibit large polarization ratios of 3.3 at 785 nm and 2.8 at 940 nm. Moreover, a high detectivity of 7.35 × 10¹² Jones of the present devices is also achieved. Our work gives the first demonstration of self-powered polarization-sensitive photodetection of MAPbI₃ SCs and provides a strategy to design polarization-sensitive materials beyond the conventional limitations induced by isotropic structures.

Modeling of Enhanced Polar Magneto-Optic Kerr Effect by Surface Plasmons in Au Bowtie Arrays

The weak magneto-optical (MO) signal of traditional MO materials is indeed an important issue for their further practical applications. Although many strategies have been proposed to improve the MO effect, hybridization with noble metal nanostructures is a promising route in recent years due to the high localized-surface plasmon resonances (LSPR) effect. A new magneto-optical surface plasmon resonance (MOSPR) structure hybrid with Au bowtie arrays is proposed to increase the measuring range of the polar magneto-optical Kerr effect (PMOKE) and the quality factor through the LSPR effect. It is verified by a numerical simulation of the finite element method (FEM). The optimized parameters were found by modulating the shape and geometric dimensions. Owing to the significant LSPR from the Au bowties, a PMOKE amplification signal spectrum with narrow linewidth, and a high amplitude with high-sensing performance was achieved. Compared with the bare magnetic film alone, by optimizing the relevant parameters of the LSPR structure, the maximum signal increases 3255 times, and the quality factor can be greatly improved, which would provide important guidance and help for the practical application of MO devices.

Scaling infrared detectors-status and outlook

The predicted 'Law 19' benchmark for HgCdTe photodiode performance established in 2019 is a milestone in the development of infrared (IR) detectors and make the dream of Elliott and colleagues, who in 1999 wrote thatthere is no fundamental obstacle to obtaining room temperature operation of photon detectors at room temperature with background-limited performance even in reduced fields of view(Elliottet al1999Appl. Phys. Lett.742881). This circumstance will make it possible to achieve in the near future the room-temperature IR arrays operation with high pixel density (small pixels) fully compatible with the background and diffraction-limited performance resulting from the system optics. The advent of smaller pixels also results in superior spatial and temperature resolutions of imaging systems. In megapixel imaging systems, the pixel dimension plays a crucial role in determining critical system attributes such as system size, weight, and power consumption. In the paper, the physical limitations of pixel size related to the aperture of the optics, which in turn is wavelength dependent, are described. Since the critical parameter of small pixels is quantum efficiency, more attention has been paid to enhancing the coupling of radiation to the detector. Then, the evaluation for assessing the figure-of-merit of different material systems (especially short wavelength IR colloidal quantum dots, both medium and long wavelength IR novel III-V material systems) relative to bulk HgCdTe alloys is considered. Of the various thermal detectors, particular attention has been focussed on bolometer arrays due to their largest share of the global commercial market. Also key challenges in realizing ultimate pixel dimensions in focal plane arrays design are presented for different material systems including dark current, pixel hybridization, pixel delineation, and unit cell readout capacity.

Resonant Grating-Enhanced Black Phosphorus Mid-Wave Infrared Photodetector

Black phosphorus (BP) has emerged as a promising materials system for mid-wave infrared photodetection because of its moderate bandgap, high carrier mobility, substrate compatibility, and bandgap tunability. However, its uniquely tunable bandgap can only be taken advantage of with thin layer thicknesses, which ultimately limits the optical absorption of a BP photodetector. This work demonstrates an absorption-boosting resonant metal-insulator-metal (MIM) metasurface grating integrated with a thin-film BP photodetector. We designed and fabricated different MIM gratings and characterized their spectral properties. Then, we show that an MIM structure increased room temperature responsivity from 12 to 77 mA W^-1 at 3.37 μm when integrated with a thin-film BP photodetector. Our results show that MIM structures simultaneously increase mid-wave infrared absorption and responsivity in a thin-film BP photodetector.

High-Responsivity Multiband and Polarization-Sensitive Photodetector Based on the TiS3/MoS2 Heterojunction

Two-dimensional (2D) material photodetectors have received considerable attention in optoelectronics as a result of their extraordinary properties, such as passivated surfaces, strong light-matter interactions, and broad spectral responses. However, single 2D material photodetectors still suffer from low responsivity, large dark current, and long response time as a result of their atomic-level thickness, large binding energy, and susceptibility to defects. Here, a transition metal trichalcogenide TiS₃ with excellent photoelectric characteristics, including a direct bandgap (1.1 eV), high mobility, high air stability, and anisotropy, is selected to construct a type-II heterojunction with few-layer MoS₂, aiming to improve the performance of 2D photodetectors. An ultrahigh photoresponsivity of the TiS₃/MoS₂ heterojunction of 48 666 A/W at 365 nm, 20 000 A/W at 625 nm, and 251 A/W at 850 nm is achieved under light-emitting diode illumination. The response time and dark current are 2 and 3 orders of magnitude lower than those of the current TiS₃ photodetector with the highest photoresponsivity (2500 A/W), respectively. Furthermore, polarized four-wave mixing spectroscopy and polarized photocurrent measurements verify its polarization-sensitive characteristics. This work confirms the excellent potential of TiS₃/MoS₂ heterojunctions for air-stable, high-performance, polarization-sensitive, and multiband photodetectors, and the excellent type-II TiS₃/MoS₂ heterojunction system may accelerate the design and fabrication of other 2D functional devices.

Monolithic Metamaterial-Integrated Graphene Terahertz Photodetector with Wavelength and Polarization Selectivity

The frequency spectra and polarization states of terahertz waves can convey significant information about physical interactions and material properties. Compact and miniaturized on-chip platforms for effective capturing of these quantities are being extensively investigated because of their promising potential for paramount applications of terahertz technology such as in situ sensing and characterization. Here, we present a metamaterial-graphene hybrid device that integrates the functions of photodetection, wavelength, and polarization selectivity into a monolithic architecture. Leveraging the ultrahigh design freedom of metamaterial optical properties and the electronically controllable hot-carrier-assisted photothermoelectric effect in graphene, our detector shows resonantly enhanced photoresponse at two specific target wavelengths with orthogonal polarizations. We demonstrate its versatile capabilities for spectrally selective and polarization resolved imaging on a single-chip platform that is free from advanced optical components. Our strategy is beneficial to the future development of multifunctional, compact, and low-cost terahertz sensors.

Fully Depleted Self-Aligned Heterosandwiched Van Der Waals Photodetectors

Room-temperature-operating highly sensitive mid-wavelength infrared (MWIR) photodetectors are utilized in a large number of important applications, including night vision, communications, and optical radar. Many previous studies have demonstrated uncooled MWIR photodetectors using 2D narrow-bandgap semiconductors. To date, most of these works have utilized atomically thin flakes, simple van der Waals (vdW) heterostructures, or atomically thin p-n junctions as absorbers, which have difficulty in meeting the requirements for state-of-the-art MWIR photodetectors with a blackbody response. Here, a fully depleted self-aligned MoS₂ -BP-MoS₂ vdW heterostructure sandwiched between two electrodes is reported. This new type of photodetector exhibits competitive performance, including a high blackbody peak photoresponsivity up to 0.77 A W^-1 and low noise-equivalent power of 2.0 × 10^-14  W Hz^-1/2 , in the MWIR region. A peak specific detectivity of 8.61 × 10¹⁰  cm Hz^1/2  W^-1 under blackbody radiation is achieved at room temperature in the MWIR region. Importantly, the effective detection range of the device is twice that of state-of-the-art MWIR photodetectors. Furthermore, the device presents an ultrafast response of ≈4 µs both in the visible and short-wavelength infrared bands. These results provide an ideal platform for realizing broadband and highly sensitive room-temperature MWIR photodetectors.

Improving Photoelectric Conversion with Broadband Perovskite Metasurface

The miniaturization and integration of optoelectronic devices require progressive size reduction of active layers, resulting in less optical absorption and lower quantum efficiency. In this work, we demonstrate that introducing a metasurface made of hybrid organic-inorganic perovskite (HOIP) can significantly enhance broadband absorption and improve photon-to-electron conversion, which roots from exciting Mie resonances together with suppressing optical transmission. On the basis of the HOIP metasurface, a broadband photodetector has been fabricated where photocurrent boosts more than 10 times in the frequency ranging from ultraviolet to visible. The device response time is less than 5.1 μs at wavelengths 380, 532, and 710 nm, and the relevant 3 dB bandwidth is over 0.26 MHz. Moreover, this photodetector has been applied as a signal receiver for transmitting 2D color images in broadband optical communication. These results accentuate the practical applications of HOIP metasurfaces in novel optoelectronic devices for broadband optical communication.

On-chip mid-infrared photothermoelectric detectors for full-Stokes detection

On-chip polarimeters are highly desirable for the next-generation ultra-compact optical and optoelectronic systems. Polarization-sensitive photodetectors relying on anisotropic absorption of natural/artificial materials have emerged as a promising candidate for on-chip polarimeters owing to their filterless configurations. However, these photodetectors can only be applied for detection of either linearly or circularly polarized light, not applicable for full-Stokes detection. Here, we propose and demonstrate three-ports polarimeters comprising on-chip chiral plasmonic metamaterial-mediated mid-infrared photodetectors for full-Stokes detection. By manipulating the spatial distribution of chiral metamaterials, we could convert polarization-resolved absorptions to corresponding polarization-resolved photovoltages of three ports through the photothermoelectric effect. We utilize the developed polarimeter in an imaging demonstration showing reliable ability for polarization reconstruction. Our work provides an alternative strategy for developing polarization-resolved photodetectors with a bandgap-independent operation range in the mid-infrared.

Polarization-Resolved p-Se/n-WS2 Heterojunctions toward Application in Microcomputer System as Multivalued Signal Trigger

Polarization-sensitive photodetectors based on van der Waals heterojunctions (vdWH) have excellent polarization-resolved optoelectronic properties that can enable the applications in polarized light identification and imaging. With the development of optical microcomputer control systems (OMCS), it is crucial and energy efficient to adopt the self-powered and polarization-resolved signal-generators to optimize the circuit design of OMCS. In this work, the selenium (Se) flakes with in-plane anisotropy and p-type character are grown and incorporated with n-type tungsten disulfide (WS₂ ) to construct the type-II vdWH for polarization-sensitive and self-powered photodetectors. Under 405 nm monochrome laser with 1.33 mW cm^-2 power density, the photovoltaic device exhibits superior photodetection performance with the photoelectric conversion efficiency (PCE) of 3.6%, the responsivity (R) of 196 mA W^-1 and the external quantum efficiency (EQE) of about 60%. The strong in-plane anisotropy of Se crystal structure gives rise to the capability of polarized light detection with anisotropic photocurrent ratio of ≈2.2 under the 405 nm laser (13.71 mW cm^-2 ). Benefiting from the well polarization-sensitive and photovoltaic properties, the p-Se/n-WS₂ vdWH is successfully applied in the OMCS as multivalued signal trigger. This work develops the new anisotropic vdWH and demonstrates its feasibility for applications in logic circuits and control systems.

Momentum-matching and band-alignment van der Waals heterostructures for high-efficiency infrared photodetection

Two-dimensional (2D) infrared photodetectors always suffer from low quantum efficiency (QE) because of the limited atomically thin absorption. Here, we reported 2D black phosphorus (BP)/Bi₂O₂Se van der Waals (vdW) photodetectors with momentum-matching and band-alignment heterostructures to achieve high QE. The QE was largely improved by optimizing the generation, suppressing the recombination, and improving the collection of photocarriers. Note that momentum-matching BP/Bi₂O₂Se heterostructures in k-space lead to the highly efficient generation and transition of photocarriers. The recombination process can be largely suppressed by lattice mismatching-immune vdW interfaces. Furthermore, type II BP/Bi₂O₂Se vdW heterostructures could also assist fast transport and collection of photocarriers. By constructing momentum-matching and band-alignment heterostructures, a record-high QE of 84% at 1.3 micrometers and 76.5% at 2 micrometers have been achieved in BP/Bi₂O₂Se vdW photodetectors.

Resonance fluorescence engineering in hybrid systems consist of biexciton quantum dots and anisotropic metasurfaces

The resonance fluorescence properties in the steady-state regime are investigated for a driven cascaded exciton-biexciton quantum dot coupled to the two-dimensional black phosphorus metasurfaces. It is shown that for the material parameters under consideration, both the elliptic and hyperbolic dispersion patterns of the surface plasmon modes are achievable according to the variation of the carrier concentration. Further study on the Purcell factor indicates unequal enhancements in the spontaneous decay of the orthogonal in-plane dipoles. Motivated by this intriguing phenomenon, we then investigate the steady-state properties of the driven quantum dot, where the populations of the dressed levels are highly tunable by engineering the anisotropy of the surfaces. As a result, the manipulation of the carrier concentration will lead to strong modifications in the resonance fluorescence. Under certain conditions, one can observe the squeezing of two-mode noise spectra with different resonances and polarizations. Although at the expense of declines in the photon-sideband detunings, it is feasible to enhance the two-mode squeezing by gate doping. Our proposal can be easily extended to other hybrid systems containing anisotropic metasurfaces, which are important for the development of quantum information science.

Ultra-sensitive polarization-resolved black phosphorus homojunction photodetector defined by ferroelectric domains

With the further miniaturization and integration of multi-dimensional optical information detection devices, polarization-sensitive photodetectors based on anisotropic low-dimension materials have attractive potential applications. However, the performance of these devices is restricted by intrinsic property of materials leading to a small polarization ratio of the detectors. Here, we construct a black phosphorus (BP) homojunction photodetector defined by ferroelectric domains with ultra-sensitive polarization photoresponse. With the modulation of ferroelectric field, the BP exhibits anisotropic dispersion changes, leading an increased photothermalelectric (PTE) current in the armchair (AC) direction. Moreover, the PN junction can promote the PTE current and accelerate carrier separation. As a result, the BP photodetector demonstrates an ultrahigh polarization ratio (PR) of 288 at 1450 nm incident light, a large photoresponsivity of 1.06 A/W, and a high detectivity of 1.27 × 10¹¹ cmHz^1/2W⁻¹ at room temperature. This work reveals the great potential of BP in future polarized light detection.

Integrated polarization-sensitive photodetectors are important for sensing applications and optical communication. Here, the authors report the realization of 2D black phosphorus homojunction photodetectors defined by ferroelectric substrates, showing polarization ratios up to 288 and high responsivity in the near-infrared.

Near-Infrared Polarimetric Image Sensors Based on Ordered Sulfur-Passivation GaSb Nanowire Arrays

The near-infrared polarimetric image sensor has a wide range of applications in the military and civilian fields, thus developing into a research hotspot in recent years. Because of their distinguishing 1D structure features, the ordered GaSb nanowire (NW) arrays possess potential applications for near-infrared polarization photodetection. In this work, single-crystalline GaSb NWs are synthesized through a sulfur-catalyzed chemical vapor deposition process. A sulfur-passivation thin layer is formed on the NW surface, which prevents the GaSb NW core from being oxidized. The photodetector based on sulfur-passivation GaSb (S-GaSb) NWs has a lower dark current and higher responsivity than that built with pure GaSb NWs. The photodetector exhibits a large responsivity of 9.39 × 10² A/W and an ultrahigh detectivity of 1.10 × 10¹¹ Jones for 1.55 μm incident light. Furthermore, the dichroic ratio of the device is measured to reach 2.65 for polarized 1.55 μm light. Through a COMSOL simulation, it is elucidated that the origin of the polarized photoresponse is the attenuation of a light electric field inside the NW when the angle of incident polarization light rotates. Moreover, a flexible polarimetric image sensor with 5 × 5 pixels is successfully constructed on the ordered S-GaSb NW arrays, and it exhibits a good imaging ability for incident near-infrared polarization light. These good photoresponse properties and polarized imaging abilities can empower ordered S-GaSb NW arrays with technological potentials in next-generation large-scale near-infrared polarimetric imaging sensors.

Multiple-polarization-sensitive photodetector based on a perovskite metasurface

Most polarization-sensitive photodetectors detect either linearly polarized (LP) or circularly polarized (CP) light. Here, we experimentally demonstrate a multiple-polarization photodetector based on a hybrid organic-inorganic perovskite (HOIP) metasurface, which is sensitive to both LP and CP light simultaneously. The perovskite metasurface is composed of a HOIP antenna array on a single-crystal HOIP film. Owing to the antenna anisotropy, the absorption of linearly polarized light at the metasurface depends on the polarization angle; also, due to the mirror asymmetry of the antenna elements, the metasurface is also sensitive to different circular polarizations. Polarization-dependent photocurrent responses to both LP and CP light are detected. Our results highlight the potential of perovskite metasurfaces for integrated photoelectric applications.

Strong In-Plane Anisotropic SiP2 as a IV-V 2D Semiconductor for Polarized Photodetection

In-plane anisotropic two-dimensional (2D) materials, emerging as an intriguing type of 2D family, provide an ideal platform for designing and fabrication of optoelectronic devices. Exploring air-stable and strong in-plane anisotropic 2D materials is still challenging and promising for polarized photodetection. Herein, SiP₂, a 2D IV-V semiconductor, is successfully prepared and introduced into an in-plane anisotropic 2D family. The basic characterizations combined with theoretical calculations reveal 2D SiP₂ to exhibit an intrinsically low-symmetry structure, the in-plane anisotropy of phonon vibrations, and an anisotropically dispersed band structure. Moreover, the photodetector based on 2D SiP₂ exhibits high performance with a high detectivity of 10¹² Jones, a large light on/off ratio of 10³, a low dark current of 10^-13 A, and a fast response speed of 3 ms. Furthermore, 2D SiP₂ demonstrates a high anisotropic photodetection with an anisotropic ratio up to 2. In addition, the polarization-sensitive photodetector presents a dichroic ratio of 1.6 due to the intrinsic linear dichroism. These good characteristics make 2D SiP₂ a promising candidate as an in-plane anisotropic semiconductor for high-sensitivity and polarized optoelectronic applications.

Near-Infrared Self-Powered Linearly Polarized Photodetection and Digital Incoherent Holography Using WSe2/ReSe2 van der Waals Heterostructure

Polarization-sensitive photodetection has attracted considerable attention as an emerging technology for future optoelectronic applications such as three-dimensional (3D) imaging, quantum optics, and encryption. However, traditional photodetectors based on Si or III-V InGaAs semiconductors cannot directly detect polarized light without additional optical components. Herein, we demonstrate a self-powered linear-polarization-sensitive near-infrared (NIR) photodetector using a two-dimensional WSe₂/ReSe₂ van der Waals heterostructure. The WSe₂/ReSe₂ heterojunction photodiode with semivertical geometry exhibits excellent performance: an ideality factor of 1.67, a broad spectral photoresponse of 405-980 nm with a significant photovoltaic effect, outstanding linearity with a linear dynamic range wider than 100 dB, and rapid photoswitching behavior with a cutoff frequency up to 100 kHz. Strongly polarized excitonic transitions around the band edge in ReSe₂ lead to significant 980 nm NIR linear-polarization-dependent photocurrent. This linear polarization sensitivity remains stable even after exposure to air for longer than five months. Furthermore, by leveraging the NIR (980 nm)-selective linear polarization detection of this photodiode under photovoltaic operation, we demonstrate digital incoherent holographic 3D imaging.

High performance polarization-sensitive self-powered imaging photodetectors based on a p-Te/n-MoSe2 van der Waals heterojunction with strong interlayer transition

In-plane anisotropic two-dimensional (2D) materials offer great opportunities for developing novel polarization sensitive photodetectors without being in conjunction with filters and polarizers. However, owing to low linear dichroism ratio and insufficient optical absorption of the few layer 2D materials, the comprehensive performance of the present polarization sensitive photodetectors based on 2D materials is still lower than the practical application requirements. In this work, after systematic investigation of the structural, vibrational, and optical anisotropies of layer-structured Te nanosheets, a novel polarization-sensitive self-powered imaging photodetector with high comprehensive performance based on a p-Te/n-MoSe₂ van der Waals heterojunction (vdWH) with strong interlayer transition is proposed. Owing to the high rectification ratio (10⁴) of the diode, the device shows excellent photovoltaic characteristics. As examples, the photodetectors exhibited an ultrahigh on/off ratio of 10⁵ at a relatively weak light intensity (4.73 mw cm^-2), and the highest responsivity of the device could reach 2106 mA W^-1 without any power supply. In particular, benefitting from the excellent dichroism properties of Te nanosheets synthesized in this work, the anisotropic ratio of the photocurrent (I_max/I_min) could reach as high as 16.39 (405 nm, 24.2 mw cm^-2). This value obtained under zero bias voltage is much greater than that of present 2D material photodetectors even at a bias voltage. In addition, the highest detectivity is 2.91 × 10¹³ Jones at a low bias voltage of -0.08 V. This work provides a novel building block for high resolution polarization-sensitive photodetection of weak signals in complex environments.

Applications of 2D-Layered Palladium Diselenide and Its van der Waals Heterostructures in Electronics and Optoelectronics

The rapid development of two-dimensional (2D) transition-metal dichalcogenides has been possible owing to their special structures and remarkable properties. In particular, palladium diselenide (PdSe₂) with a novel pentagonal structure and unique physical characteristics have recently attracted extensive research interest. Consequently, tremendous research progress has been achieved regarding the physics, chemistry, and electronics of PdSe₂. Accordingly, in this review, we recapitulate and summarize the most recent research on PdSe₂, including its structure, properties, synthesis, and applications. First, a mechanical exfoliation method to obtain PdSe₂ nanosheets is introduced, and large-area synthesis strategies are explained with respect to chemical vapor deposition and metal selenization. Next, the electronic and optoelectronic properties of PdSe₂ and related heterostructures, such as field-effect transistors, photodetectors, sensors, and thermoelectric devices, are discussed. Subsequently, the integration of systems into infrared image sensors on the basis of PdSe₂ van der Waals heterostructures is explored. Finally, future opportunities are highlighted to serve as a general guide for physicists, chemists, materials scientists, and engineers. Therefore, this comprehensive review may shed light on the research conducted by the 2D material community.

Silicon/2D-material photodetectors: from near-infrared to mid-infrared

Two-dimensional materials (2DMs) have been used widely in constructing photodetectors (PDs) because of their advantages in flexible integration and ultrabroad operation wavelength range. Specifically, 2DM PDs on silicon have attracted much attention because silicon microelectronics and silicon photonics have been developed successfully for many applications. 2DM PDs meet the imperious demand of silicon photonics on low-cost, high-performance, and broadband photodetection. In this work, a review is given for the recent progresses of Si/2DM PDs working in the wavelength band from near-infrared to mid-infrared, which are attractive for many applications. The operation mechanisms and the device configurations are summarized in the first part. The waveguide-integrated PDs and the surface-illuminated PDs are then reviewed in details, respectively. The discussion and outlook for 2DM PDs on silicon are finally given.

Infrared broadband enhancement of responsivity in Ge photodetectors decorated with Au nanoparticles

A broadband, high-performance infrared Ge photodetector decorated with Au nanoparticles (NPs) is proposed. Photoelectronic characterization demonstrated that the responsivity of devices decorated with Au NPs is as high as 3.95 A/W at a wavelength of 1550 nm. Compared with a Ge photodetector without Au NPs, the responsivity of a device decorated with Au NPs is significantly increased, i.e., by more than 10 times in the entire range of infrared communication wavelengths, including the O, E, S, C, L, and U bands. The increase is ascribed to type-II energy-band alignment between Ge covered with Au NPs and bare Ge, instead of the localized surface-plasmon-resonance effect. The type-II energy-band alignment enhances the spatial electron-hole separation and restrains the electron-hole recombination, thus a larger photocurrent is observed. These results reflect the potential of this approach for achieving broadband, high-performance Ge photodetectors operating in the near-infrared communication band.

In-plane anisotropic 2D Ge-based binary materials for optoelectronic applications

In-plane anisotropic two-dimensional (2D) materials possess unique in-plane anisotropic physical properties arising from their low crystal lattice symmetry.

Strain Engineering in 2D Material-Based Flexible Optoelectronics

Flexible optoelectronics, as promising components hold shape-adaptive features and dynamic strain response under strain engineering for various intelligent applications. 2D materials with atomically thin layers are ideal for flexible optoelectronics because of their high flexibility and strain sensitivity. However, how the strain affects the performance of 2D materials-based flexible optoelectronics is confused due to their hypersensitive features to external strain changes. It is necessary to establish an evaluation system to comprehend the influence of the external strain on the intrinsic properties of 2D materials and the photoresponse performance of their flexible optoelectronics. Here, a focused review of strain engineering in 2D materials-based flexible optoelectronics is provided. The first attention is on the mechanical properties and the strain-engineered electronic properties of 2D semiconductors. An evaluation system with relatively comprehensive parameters in functionality and service capability is summarized to develop 2D materials-based flexible optoelectronics in practical application. Based on the parameters, some strategies to improve the functionality and service capability are proposed. Finally, combining with strain engineering in future intelligence devices, the challenges and future perspective developing 2D materials-based flexible optoelectronics are expounded.

Two dimensional BP@AuNP nanocomposites for photothermal/photodynamic therapy mediated wound disinfection and infected wound healing under a single light source

BP@AuNP nanocomposites can perform photothermal and photodynamic therapies simultaneously and exhibited a synergistic combination of multiple therapies for S. aureus and E. coli under a 650 nm laser.

Zero-bias mid-infrared graphene photodetectors with bulk photoresponse and calibration-free polarization detection

Bulk photovoltaic effect (BPVE), featuring polarization-dependent uniform photoresponse at zero external bias, holds potential for exceeding the Shockley-Queisser limit in the efficiency of existing opto-electronic devices. However, the implementation of BPVE has been limited to the naturally existing materials with broken inversion symmetry, such as ferroelectrics, which suffer low efficiencies. Here, we propose metasurface-mediated graphene photodetectors with cascaded polarization-sensitive photoresponse under uniform illumination, mimicking an artificial BPVE. With the assistance of non-centrosymmetric metallic nanoantennas, the hot photocarriers in graphene gain a momentum upon their excitation and form a shift current which is nonlocal and directional. Thereafter, we demonstrate zero-bias uncooled mid-infrared photodetectors with three orders higher responsivity than conventional BPVE and a noise equivalent power of 0.12 nW Hz^−1/2. Besides, we observe a vectorial photoresponse which allows us to detect the polarization angle of incident light with a single device. Our strategy opens up alternative possibilities for scalable, low-cost, multifunctional infrared photodetectors.

Here, graphene-based plasmonic metamaterials are used to generate an artificial bulk photovoltaic effect, enabling the realization of mid-infrared photodetectors with enhanced responsivity and calibration-free polarization detection at room temperature.

Ag+ -Coupled Black Phosphorus Vesicles with Emerging NIR-II Photoacoustic Imaging Performance for Cancer Immune-Dynamic Therapy and Fast Wound Healing

A silver-ion-coupled black phosphorus (BP) vesicle (BP Ve-Ag⁺ ) with a second near infrared (NIR-II) window photoacoustic (PA) imaging capability was firstly constructed to maximize the potential of BP quantum dot (QD) in deeper bioimaging and diversified therapy. The embedded Ag⁺ could improve the relatively large band gap of BP QD via intense charge coupling based on theoretical simulation results, subsequently leading to the enhanced optical absorption capability, accompanied with the occurrence of the strong NIR-II PA signal. Guiding by NIR-II PA bioimaging, the hidden Ag⁺ could be precisely released with the disassembly of Ve during photodynamic therapy process and captured by macrophages located in lesion region for arousing synergistic cancer photodynamic/Ag⁺ immunotherapy. BP Ve-Ag⁺ can contrapuntally kill pathogenic bacteria and accelerate wound healing monitored by NIR-II PA imaging.

Characterisation and Manipulation of Polarisation Response in Plasmonic and Magneto-Plasmonic Nanostructures and Metamaterials

Optical properties of metal nanostructures, governed by the so-called localised surface plasmon resonance (LSPR) effects, have invoked intensive investigations in recent times owing to their fundamental nature and potential applications. LSPR scattering from metal nanostructures is expected to show the symmetry of the oscillation mode and the particle shape. Therefore, information on the polarisation properties of the LSPR scattering is crucial for identifying different oscillation modes within one particle and to distinguish differently shaped particles within one sample. On the contrary, the polarisation state of light itself can be arbitrarily manipulated by the inverse designed sample, known as metamaterials. Apart from polarisation state, external stimulus, e.g., magnetic field also controls the LSPR scattering from plasmonic nanostructures, giving rise to a new field of magneto-plasmonics. In this review, we pay special attention to polarisation and its effect in three contrasting aspects. First, tailoring between LSPR scattering and symmetry of plasmonic nanostructures, secondly, manipulating polarisation state through metamaterials and lastly, polarisation modulation in magneto-plasmonics. Finally, we will review recent progress in applications of plasmonic and magneto-plasmonic nanostructures and metamaterials in various fields.

Plasmonic-tape-attached multilayered MoS2 film for near-infrared photodetection

Molybdenum disulfide has been intensively studied as a promising material for photodetector applications because of its excellent electrical and optical properties. We report a multilayer MoS₂ film attached with a plasmonic tape for near-infrared (NIR) detection. MoS₂ flakes are chemically exfoliated and transferred onto a polymer substrate, and silver nanoparticles (AgNPs) dewetted thermally on a substrate are transferred onto a Scotch tape. The Scotch tape with AgNPs is attached directly and simply onto the MoS₂ flakes. Consequently, the NIR photoresponse of the MoS₂ device is critically enhanced. The proposed tape transfer method enables the formation of plasmonic structures on arbitrary substrates, such as a polymer substrate, without requiring a high-temperature process. The performance of AgNPs-MoS₂ photodetectors is approximately four times higher than that of bare MoS₂ devices.

Gold-black phosphorus nanostructured absorbers for efficient light trapping in the mid-infrared

We propose a gold nanostructured design for absorption enhancement in thin black phosphorus films in the 3-5 µm wavelength range. By suitably tuning the design parameters of a metal-insulator-metal (MIM) structure, lateral resonance modes can be excited in the black phosphorus layer. We compare the absorption enhancement due to the resonant light trapping effect to the conventional 4n2 limit. For a layer thickness of 5 nm, we achieve an enhancement factor of 561 at a wavelength of 4 µm. This is significantly greater than the conventional limit of 34. The ability to achieve strong absorption enhancement in ultrathin dielectric layers, coupled with the unique optoelectronic properties of black phosphorus, makes our absorber design a promising candidate for mid-IR photodetector applications.

Ultrathin circular polarimeter based on chiral plasmonic metasurface and monolayer MoSe2

Two-dimensional materials are ideal platforms for intriguing physics and optoelectronic applications because of their ultrathin thicknesses and excellent properties in optics and electronics. Further studies on enhancing the interaction between light and two-dimensional materials by combining metallic nanostructures have generated broad interests in recent years, such as enhanced photoluminescence, strong coupling and functional optoelectronics. In this work, an ultrathin circular polarimeter consisting of chiral plasmonic metasurface and monolayer semiconductor is proposed to detect light with different circular polarization within a compact device. A designed chiral plasmonic metasurface with sub-wavelength thickness is integrated with monolayer MoSe₂, and the circular-polarization-dependent photocurrent responses of right and left circularly polarized light for both left- and right-handed metasurfaces are experimentally demonstrated. The photoresponse circular dichroism is also obtained, which further indicates the remarkable performance of the proposed device in detecting and distinguishing circularly polarized light. This design offers a great potential to realize multifunctional measurements in an ultrathin and ultracompact two-dimensional device for future integrated optics and optoelectronic applications with circularly polarized light.

The Rise of 2D Photothermal Materials beyond Graphene for Clean Water Production

Water shortage is one of the most concerning global challenges in the 21st century. Solar-inspired vaporization employing photothermal nanomaterials is considered to be a feasible and green technology for addressing the water challenge by virtue of abundant and clean solar energy. 2D nanomaterials aroused considerable attention in photothermal evaporation-induced water production owing to their large absorption surface, strong absorption in broadband solar spectrum, and efficient photothermal conversion. Herein, the recent progress of 2D nanomaterials-based photothermal evaporation, mainly including emerging Xenes (phosphorene, antimonene, tellurene, and borophene) and binary-enes (MXenes and transition metal dichalcogenides), is reviewed. Then, the optimization strategies for higher evaporation performance are summarized in terms of modulation of the intrinsic photothermal performance of 2D nanomaterials and design of the complete evaporation system. Finally, the challenges and prospective of various kinds of 2D photothermal nanomaterials are discussed in terms of the photothermal performance, stability, environmental influence, and cost. One important principle is that solutions for water challenges should not introduce new environmental and social problems. This Review aims to highlight the role of 2D photothermal nanomaterials in solving water challenges and provides a viable scheme toward the practical use in photothermal materials selection, design, and evaporation systems building.

Gate stimulated high-performance MoS2-In(OH) x Se phototransistor

Two-dimensional (2D) materials such as graphene and MoS₂ have shown great potential in photodetection platforms. Photoresponsivity and photoresponse speed are two important parameters illustrating photodetector performances. Although various hybrid structures have been designed, the trade-off between photoresponsivity and photoresponse speed has not been well balanced. In this work, MoS₂ film and In(OH) _x Se nanoparticles are combined together to form the hybrid phototransistor. Utilizing both the photoconducting and photogating effects, the photoresponsivity increases about one order of magnitude with a value of 10² A W^-1. The ratio of photocurrent and dark current increases to a value of 10⁴. Considering the slow photo recovery speed, a 2 ms gate voltage pulse is applied after turning off the light, which results in a complete recovery of current. The photoconducting effect, photogating effect and gate voltage stimulation simultaneously promote the superior comprehensive photoresponse performances. This method can be further explored and utilized for realizing high performance photodetectors.

Polarization-Dependent Optical Properties and Optoelectronic Devices of 2D Materials

The development of optoelectronic devices requires breakthroughs in new material systems and novel device mechanisms, and the demand recently changes from the detection of signal intensity and responsivity to the exploration of sensitivity of polarized state information. Two-dimensional (2D) materials are a rich family exhibiting diverse physical and electronic properties for polarization device applications, including anisotropic materials, valleytronic materials, and other hybrid heterostructures. In this review, we first review the polarized-light-dependent physical mechanism in 2D materials, then present detailed descriptions in optical and optoelectronic properties, involving Raman shift, optical absorption, and light emission and functional optoelectronic devices. Finally, a comment is made on future developments and challenges. The plethora of 2D materials and their heterostructures offers the promise of polarization-dependent scientific discovery and optoelectronic device application.

Synthesis of low-symmetry 2D Ge(1-x)SnxSe2 alloy flakes with anisotropic optical response and birefringence

Low-symmetry two-dimensional (2D) materials with unique in-plane anisotropy can promote both fundamental science and practical applications in optics, optoelectronics, electronics, and polarization detection. As a member of 2D materials, doping/alloying material systems have gained great attention owing to the tunable bandgap and special properties. However, the in-plane anisotropic optical and electrical properties of these 2D alloy materials have rarely been reported. In this work, low-symmetry 2D Ge_(1-x)Sn_xSe₂ (x = 0-1.0) alloy flakes have been synthesized by chemical vapor deposition (CVD) with a bandgap varying from 1.55 eV (GeSe₂, x = 0) to 1.90 eV (SnSe₂, x = 1.0). Angle-resolved polarized Raman spectroscopy (ARPRS) is used to confirm the in-plane vibrational anisotropy, and azimuth-dependent reflectance difference microscopy (ADRDM) is applied to visualize the in-plane optical anisotropy. Polarization-dependent transmission spectroscopy (PDTS) is carried out to reflect the in-plane absorptional anisotropy and linear dichroism, and birefringence characteristics are also found in the subsequent studies. All of the results indicate the unique in-plane optical anisotropy and birefringence characteristics of the 2D Ge_(1-x)Sn_xSe₂ alloy flakes, providing new opportunities for polarization-controlled devices, optical wave plates, and polarizers.

Concentrically Integrative Bioassembly of a Three-Dimensional Black Phosphorus Nanoscaffold for Restoring Neurogenesis, Angiogenesis, and Immune Homeostasis

Black phosphorus is well known for its excellent electromechanical properties. Although it has previously been used for therapeutic drug delivery in cancer, it has never been applied as an electroactive polymer for post-trauma tissue regeneration (e.g., in cardiac muscles and neurons). The major concern currently preventing such applications is its controversial biosafety profile in vivo. Here, we demonstrate the production of a concentrically integrative layer-by-layer bioassembled black phosphorus nanoscaffold. This scaffold has remarkable electrical conductivity, permitting smooth release into the surrounding microenvironment. We confirmed that, under mild oxidative stress, our black phosphorus nanoscaffold induced angiogenesis and neurogenesis and stimulated calcium-dependent axon regrowth and remyelination. Long-term in vivo implantation of this nanoscaffold during severe neurological defect regeneration induced negligible toxicity levels. These results provide new insight into the regenerative capability of manufactured 3D scaffolds using neuroengineered 2D black phosphorus nanomaterials.

Tunable THz reflection-type polarizer based on monolayer phosphorene

We demonstrate a tunable reflection-type polarizer in the terahertz (THz) regime formed by inserting a monolayer phosphorene in a Fabry-Perot cavity composed of a metal substrate and a distributed Bragg reflector. The physical mechanism of the polarizer is analyzed through the reflection spectrum, the electric field distribution, the energy flow, and the power dissipation density calculated by transfer-matrix method and finite-difference time-domain method. The results show that the polarization-selected reflection is caused by the in-plane anisotropic absorption of the phosphorene due to its special atomic lattice, and the polarization selection is further enhanced by the cavity resonator. A polarized reflection light can be obtained with a polarizing extinction ratio of more than 20 dB and a total reflectivity around 50% in the designed THz frequency. The operation frequency of the polarizer can be tuned by the angle of the incident light, the doping electron concentration, and the uniaxial strains of the phosphorene. The refection-type polarizer provides many applications such as filters, detectors, and biosensors.

Enhanced polarization photodetection of metallic cavity ensemble through spontaneously configured lateral electrodes

Metallic cavities show substantial advantages in light confinement, providing opportunities to modulate the optical resonances and absorption. Here, we report on the configuration of horizontally aligned ZnO-nanowires-based metallic cavity ensemble with a light to dark current ratio of ∼1000. An enhanced polarization photodetection ratio of transverse electric (TE) to transverse magnetic (TM) was experimentally observed compared to the single ZnO nanowire photodetector. Finite difference time domain simulation was performed on the metallic cavities, showing the distinct resonance behaviors under TE and TM light. The confinement by the multi-reflection and optical resonances between the metallic claddings contribute to the high anisotropy ratio. Furthermore, the polarized light absorption in the metallic cavity was studied as well as in the naked nanowire, which reveal a significant dependence on the cavity diameter and wavelength. For the metallic cavities, the absorption ratio of TE to TM show an enhanced value in the range of 300-500 nm wavelength and 85-150 diameter and a reversed value in the range of 400-500 nm wavelength and 17-50 diameter. While for the naked nanowires, the ratio show an apparently opposite value in these two regions. The presented metallic cavities demonstrate a specific paradigm of optical engineering in nanoscale and potentially helps the development of optoelectronic devices.