Unveiling Defect-Related Raman Mode of Monolayer WS2 via Tip-Enhanced Resonance Raman Scattering

Determination and investigation of defect domains in multi-shape monolayer tungsten disulfide

Single-layer tungsten disulfide (WS2) is among the most widely investigated two-dimensional materials. Synthesizing it over large areas would enable the exploitation of its appealing optical and electronic properties in industrial applications. However, defects of different nature, concentration and distribution profoundly affect the optical as well as the electronic properties of this crystal. Controlling the defect density distribution can be an effective way to tailor the local dielectric environment and therefore the electronic properties of the system. In this work we investigate the defects in single-layer WS2, grown in different shapes by liquid phase chemical vapor deposition, where the concentration of certain defect species can be controlled by the growth conditions. The properties of the material are surveyed by means of optical spectroscopy, photoelectron spectroscopy and Kelvin probe force microscopy. We determine the chemical nature of the defects and study their influence on the optical and electronic properties of WS2. This work contributes to the understanding of the microscopic nature of the intrinsic defects in WS2, helping the development of defect-based technologies which rely on the control and engineering of defects in dielectric 2D crystals.

Divergent Vibrational Property Induced by an Anomalous Layer Sequence in Two-Dimensional GaPS4

Recently, various fundamental properties of GaPS4 such as anisotropy and strain-induced properties have been reported, but the impacts of the stacking sequence in layered materials remain ambiguous. This ambiguity is evident in the inconsistent Raman scattering data reported for GaPS4, suggesting a significant influence of stacking order on its physical properties. To demonstrate the discrepancies, this study investigates the vibrational characteristics of 2D GaPS4 under different stacking sequences using both experimental observations and theoretical models (AA and AB sequences) through density functional theory calculations. The results of our theoretical calculations revealed that the identical stacking sequence structure significantly influences the vibrational configurations of GaPS4, which results in divergent configurations of Raman scattering spectra including unidentified Raman peaks. Our study addresses not only the clarification of the ambiguity of experimental observations but also qualitative criteria to evaluate the degree of each stacking sequence.

p-Toluenesulfonic Acid Modified Two-Dimensional ZrSe2 as a Hole Transport Layer for High-Performance Organic Solar Cells

Two-dimensional (2D) materials have attracted attention due to their excellent optoelectronic properties, but their applications are limited by their defects and vacancies. Surface modification is an effective method to restore their performance. Here, ZrSe2 is modified with conductive polymer p-toluenesulfonic acid (PTSA). It is found that PTSA can obtain electrons of ZrSe2 through the combination of -SO3H and ZrSe2, thus forming interfacial dipoles, which improve the work function of ZrSe2. In addition, -OH in PTSA can effectively fill the Se vacancy in ZrSe2 to form P-type doping, thereby improving its conductivity. ZrSe2 modified by the PTSA material is first used as a hole transport layer (HTL) in organic solar cells (OSCs). The efficiency of OSCs based on the PBDB-T:ITIC and PM6:L8-BO binary active layer with ZrSe2:PTSA as the novel HTL reaches 10.66 and 18.14%, which are obviously higher than the efficiency of OSCs with pure ZrSe2 as the HTL (8.48 and 15.64%). More interestingly, the stability of the device with ZrSe2:PTSA as HTL is significantly better than that of PEDOT:PSS. This study shows that the modification of the organic material can effectively improve the photoelectric performance of ZrSe2 and explores the physical mechanism of the interaction between the organic modifier and 2D materials.

Engineering the Electrical and Optical Properties of WS2 Monolayers via Defect Control

Two-dimensional (2D) materials as tungsten disulphide (WS2 ) are rising as the ideal platform for the next generation of nanoscale devices due to the excellent electric-transport and optical properties. However, the presence of defects in the as grown samples represents one of the main limiting factors for commercial applications. At the same time, WS2 properties are frequently tailored by introducing impurities at specific sites. Aim of this review paper is to present a complete description and discussion of the effects of both intentional and unintentional defects in WS2 , by an in depth analysis of the recent experimental and theoretical investigations reported in the literature. First, the most frequent intrinsic defects in WS2 are presented and their effects in the readily synthetized material are discussed. Possible solutions to remove and heal unintentional defects are also analyzed. Following, different doping schemes are reported, including the traditional substitution approach and innovative techniques based on the surface charge transfer with adsorbed atoms or molecules. The plethora of WS2 monolayer modifications presented in this review and the systematic analysis of the corresponding optical and electronic properties, represent strategic degrees of freedom the researchers may exploit to tailor WS2 optical and electronic properties for specific device applications.

Nanotip-Induced Electric Field for Hydrogen Catalysis

Local electric field induced by the lightning-rod effect attracts great attention for regulating the local microenvironment and electronic properties of active sites. Nevertheless, local electric-field-assisted applications are mainly limited to metals with strong surface plasmonic resonance properties (e.g., Au, Ag, and Cu). Herein, we fabricate RuCu snow-like nanosheets (SNSs) with high-curvature nanotips for enhancing the hydrogen oxidation reaction (HOR) and hydrogen evolution reaction (HER). Theoretical simulations show that RuCu SNSs can induce a strong local electric field around the sharp nanotips, which favors the accumulation of OH- for HOR and H+ for HER. Cu incorporation can modulate the binding strength of OH* and H*, leading to significantly enhanced HOR and HER performance. Impressively, the mass activity of RuCu SNSs for alkaline HOR is 31.3 times higher than that of RuCu nanocrystals without sharp tips. Besides, the required overpotential for reaching 10 mA cm-2 during HER over RuCu SNSs is 14.0 mV.

One-step calcination synthesis of 2D/2D g-C3N4/WS2 van der Waals heterojunction for visible light-induced photocatalytic degradation of pharmaceutical pollutants

It is well-documented that accumulation of pharmaceutically active compounds (PhACs), such as antibiotics, in aquatic ecosystems is a prominent environmental hazard. Herein, a series of 2D materials-based heterojunctions, conceptualized based on the integration of graphitic carbon nitride (g-C₃N₄) with tungsten disulfide (WS₂), was fabricated through a facile one-step calcination process, and systematically evaluated for eliminating tetracycline (TC) and sulfamethoxazole (SMX) from aqueous matrices. The microstructure, optical properties, and surface chemistry of the as-prepared composites were examined with a range of microscopy and spectroscopy techniques. In comparison with pristine g-C₃N₄ or bare WS₂, the g-C₃N₄/WS₂ material, with optimal WS₂ loading, showed significantly improved photocatalytic activity, towards degradation of TC (84%) and SMX (96%), under visible light. Free radical scavenging experiments revealed that superoxide anions and hydroxyl radicals were predominantly responsible for the rapid breakdown of the PhACs. In addition, the dissociation intermediates and residues were identified and the plausible photocatalytic degradation pathways of TC and SMX over the as-constructed 2D/2D heterojunction were discussed. Further, the photocatalysis end products were non-toxic, as inferred via the resazurin cell viability assay, employing Escherichia coli as a model organism. Most importantly, the 2D/2D g-C₃N₄/WS₂ architecture was structurally resilient and exhibited a fairly stable cycling performance for persistent usage in wastewater treatment. The outcomes of this study testify that 2D/2D heterojunction of g-C₃N₄ fragments and WS₂ nanosheets holds great promise for destroying antibiotics or their metabolites, usually present in wastewaters.

Enhanced Magnetism and Anomalous Hall Transport through Two-Dimensional Tungsten Disulfide Interfaces

The magnetic proximity effect (MPE) has recently been explored to manipulate interfacial properties of two-dimensional (2D) transition metal dichalcogenide (TMD)/ferromagnet heterostructures for use in spintronics and valleytronics. However, a full understanding of the MPE and its temperature and magnetic field evolution in these systems is lacking. In this study, the MPE has been probed in Pt/WS₂/BPIO (biphase iron oxide, Fe₃O₄ and α-Fe₂O₃) heterostructures through a comprehensive investigation of their magnetic and transport properties using magnetometry, four-probe resistivity, and anomalous Hall effect (AHE) measurements. Density functional theory (DFT) calculations are performed to complement the experimental findings. We found that the presence of monolayer WS₂ flakes reduces the magnetization of BPIO and hence the total magnetization of Pt/WS₂/BPIO at T > ~120 K-the Verwey transition temperature of Fe₃O₄ (T_V). However, an enhanced magnetization is achieved at T < T_V. In the latter case, a comparative analysis of the transport properties of Pt/WS₂/BPIO and Pt/BPIO from AHE measurements reveals ferromagnetic coupling at the WS₂/BPIO interface. Our study forms the foundation for understanding MPE-mediated interfacial properties and paves a new pathway for designing 2D TMD/magnet heterostructures for applications in spintronics, opto-spincaloritronics, and valleytronics.

Tip-enhanced nanoscopy of two-dimensional transition metal dichalcogenides: progress and perspectives

The optoelectronic properties of two-dimensional (2D) transition metal dichalcogenide (TMD) thin layers prepared by exfoliation or chemical vapour deposition are strongly modulated by defects at the nanoscale. The mediated electronic and optical properties are expected to be spatially localised in a nanoscale width neighbouring the defects. Characterising such localised properties requires an analytical tool with nanoscale spatial resolution and high optical sensitivity. In recent years, tip-enhanced nanoscopy, represented by tip-enhanced Raman spectroscopy (TERS) and tip-enhanced photoluminescence (TEPL), has emerged as a powerful tool to characterise the localised phonon and exciton behaviours of 2D TMDs and heterojunctions (HJs) at the nanoscale. Herein, we first summarise the recent progress of TERS and TEPL in the characterisation of several typical defects in TMDs, such as edges, wrinkles, grain boundaries and other defects generated in transfer and growth processes. Then the local strain and its dynamic control of phonon and exciton behaviours characterised by TERS and TEPL will be reviewed. The recent progress in characterising TMD HJs using TERS and TEPL will be subsequently summarised. Finally, the progress of TERS and TEPL combined with optoelectronic sensitive electronic scanning probe microscopy (SPM) in the applications of TMDs will be reviewed.

Hierarchical van der Waals Heterostructure Strategy to Form Stable Transition Metal Dichalcogenide Dispersions

Although various methods have been developed to disperse transition metal dichalcogenides (TMDCs) in aqueous environments, the methodology to generate stable TMDC dispersions remains challenging. Here, we developed a hierarchical van der Waals (vdW) heterostructure-based strategy to disperse few-layered TMDCs (WS2, MoS2, WSe2, and MoSe2) using both hexagonal boron nitride (hBN) and sodium cholate (SC) as synergistic vdW surfactants. By showing long-term stability of up to 3 years, the extinction spectra of these TMDC/hBN/SC dispersions exhibit the most blue-shifted excitonic transitions, low background extinction, good colloidal stability, and dispersion stability upon ultracentrifugation compared to other dispersion methods. Hierarchical stacking having TMDCs and hBN/SC as core and shell parts is probed by electrostatic/atomic force microscopy and zeta potential, and its origin was attributed to surface energy matches. Along with the synergetic effect between TMDCs and hBN, the blue shift was ascribed to compressive strain on the TMDCs caused by hBN wrapping. The results of transmission electron microscopy show that the TMDCs in the dispersions have defective, few-layered structures with flake sizes that are less than a few hundred nm2. Raman spectroscopy is used to study not only the existence of compressive strain but also various interlayer coupling between TMDC and hBN. The hierarchical structures of TMDC/hBN/SC are discussed in terms of surface energies and topographies. This method is invaluable to provide a general methodology to disperse various surface-corrugated dimensional materials for various dispersion-based applications.

Periodic Spiral Ripples on VS2 Flakes: A Tip-Enhanced Raman Investigation

Using atmospheric-pressure chemical vapor deposition, we have synthesized vanadium disulfide (VS₂) flakes with a metallic 1T phase that display nanoscale spiral surface ripples. To understand the origin of these chiral patterns in these transition metal dichalcogenides, tip-enhanced Raman spectroscopy and Kelvin probe force microscopies were jointly used to investigate their crystal structure, possible oxidation, and electronic properties, respectively. We found that the surface corrugation consists of small crystalline domains with distinct orientations. The change in local orientation is observed concomitantly with a spectral shift of the lattice modes of VS₂ and results in the formation of grain boundaries between the domains with distinct orientation. Additionally, the periodic surface structure is modulating the work function of VS₂ by 14 meV.

SERS enhancement induced by the Se vacancy defects in ultra-thin hybrid phase SnSex nanosheets

Improving the photo-induced charge transfer (PICT) efficiency by adjusting the energy levels difference between adsorbed probe molecules and substrate materials is a key factor for boosting the surface enhanced Raman scattering (SERS) based on the chemical mechanism (CM). Herein, a new route to improve the SERS activity of two-dimensional (2D) selenium and tin compounds (SnSe_x, 1 ≤ x ≤ 2) by the hybrid phase materials is researched. The physical properties and the energy band structure of SnSe_x were analyzed. The enhanced SERS activity of 2D SnSe_x can be attribute to the coupling of the PICT resonance caused by the defect energy levels induced by Se vacancy and the molecular resonance Raman scattering (RRS). This established a relationship between the physical properties and SERS activity of 2D layered materials. The resonance probe molecule, rhodamine (R6G), which is used to detect the SERS performance of SnSe_x nanosheets. The enhancement factor (EF) of R6G on the optimized SnSe_1.35 nanosheets can be as high as 2.6 × 10⁶, with a detection limit of 10^-10 M. The SERS result of the environmental pollution, thiram, shows that the SnSe_x nanosheets have a practical application in trace SERS detection, without the participation of metal particles. These results demonstrate that, through hybrid phase materials, the SERS sensitivity of 2D layered nanomaterials can be improved. It provides a kind of foreground non-metal SERS substrate in monitoring or detecting and provide a deep insight into the chemical SERS mechanism based on 2D layered materials.

Symmetric domain segmentation in WS2flakes: correlating spatially resolved photoluminescence, conductance with valley polarization

The incidence of intra-flake heterogeneity of spectroscopic and electrical properties in chemical vapour deposited (CVD) WS₂flakes is explored in a multi-physics investigation via spatially resolved spectroscopic maps correlated with electrical, electronic and mechanical properties. The investigation demonstrates that the three-fold symmetric segregation of spectroscopic response, in topographically uniform WS₂flakes are accompanied by commensurate segmentation of electronic properties e.g. local carrier density and the differences in the mechanics of tip-sample interactions, evidenced via scanning probe microscopy phase maps. Overall, the differences are understood to originate from point defects, namely sulfur vacancies within the flake along with a dominant role played by the substrate. While evolution of the multi-physics maps upon sulfur annealing elucidates the role played by sulfur vacancy, substrate-induced effects are investigated by contrasting data from WS₂flake on Si and Au surfaces. Local charge depletion induced by the nature of the sample-substrate junction in case of WS₂on Au is seen to invert the electrical response with comprehensible effects on their spectroscopic properties. Finally, the role of these optoelectronic properties in preserving valley polarization that affects valleytronic applications in WS₂flakes, is investigated via circular polarization discriminated photoluminescence experiments. The study provides a thorough understanding of spatial heterogeneity in optoelectronic properties of WS₂and other transition metal chalcogenides, which are critical for device fabrication and potential applications.

Low-defect-density WS2 by hydroxide vapor phase deposition

Two-dimensional (2D) semiconducting monolayers such as transition metal dichalcogenides (TMDs) are promising channel materials to extend Moore’s Law in advanced electronics. Synthetic TMD layers from chemical vapor deposition (CVD) are scalable for fabrication but notorious for their high defect densities. Therefore, innovative endeavors on growth reaction to enhance their quality are urgently needed. Here, we report that the hydroxide W species, an extremely pure vapor phase metal precursor form, is very efficient for sulfurization, leading to about one order of magnitude lower defect density compared to those from conventional CVD methods. The field-effect transistor (FET) devices based on the proposed growth reach a peak electron mobility ~200 cm²/Vs (~800 cm²/Vs) at room temperature (15 K), comparable to those from exfoliated flakes. The FET device with a channel length of 100 nm displays a high on-state current of ~400 µA/µm, encouraging the industrialization of 2D materials.

Chemical vapor deposition enables the scalable production of 2D semiconductors, but the grown materials are usually affected by high defect densities. Here, the authors report a hydroxide vapour phase deposition method to synthesize wafer-scale monolayer WS₂ with reduced defect density and electrical properties comparable to those of exfoliated flakes.

Ultrastable tip-enhanced hyperspectral optical nanoimaging for defect analysis of large-sized WS2 layers

Optical nanoimaging techniques, such as tip-enhanced Raman spectroscopy (TERS), are nowadays indispensable for chemical and optical characterization in the entire field of nanotechnology and have been extensively used for various applications, such as visualization of nanoscale defects in two-dimensional (2D) materials. However, it is still challenging to investigate micrometer-sized sample with nanoscale spatial resolution because of severe limitation of measurement time due to drift of the experimental system. Here, we achieved long-duration TERS imaging of a micrometer-sized WS₂ sample for 6 hours in a reproducible manner. Our ultrastable TERS system enabled to reveal the defect density on the surface of tungsten disulfide layers in large area equivalent to the device scale. It also helped us to detect rare defect-related optical signals from the sample. The present study paves ways to evaluate nanoscale defects of 2D materials in large area and to unveil remarkable optical and chemical properties of large-sized nanostructured materials.

Revealing local structural properties of an atomically thin MoSe2 surface using optical microscopy

Using a triangular molybdenum diselenide (MoSe₂) flake as surface-enhanced Raman spectroscopy (SERS) platform, we demonstrate the dependency of the Raman enhancement on laser beam polarization and local structure using copper phthalocyanine (CuPc) as probe. Second harmonic generation (SHG) and photoluminescence spectroscopy and microscopy are used to reveal the structural irregularities of the MoSe₂ flake. The Raman enhancement in the focus of an azimuthally polarized beam, which possesses exclusively an in-plane electric field component is stronger than the enhancement by a focused radially polarized beam, where the out-of-plane electric field component dominates. This phenomenon indicates that the face-on oriented CuPc molecules strongly interact with the MoSe₂ flake via charge transfer and dipole-dipole interaction. Furthermore, the Raman scattering maps on the irregular MoSe₂ surface show a distinct correlation with the SHG and photoluminescence optical images, indicating the relationship between local structure and optical properties of the MoSe₂ flake. These results contribute to understand the impacts of local structural properties on the Raman enhancement at the surface of the 2D transition-metal dichalcogenide.

Probing Nanoscale Exciton Funneling at Wrinkles of Twisted Bilayer MoS2 Using Tip-Enhanced Photoluminescence Microscopy

In twisted bilayer (t2L) two-dimensional (2D) transition metal dichalcogenides, local strain at wrinkles strongly modulates the local exciton density and PL energy resulting in an exciton funneling effect. Probing such exciton behaviors especially at nanometer length scales is beyond the limit of conventional analytical tools due to the limited spatial resolution and low sensitivity. To address this challenge, herein we applied high-resolution tip-enhanced photoluminescence (TEPL) microscopy to investigate exciton funneling at a wrinkle in a t2L MoS₂ sample with a small twist angle of 0.5°. Owing to a spatial resolution of <10 nm, excitonic behavior at nanoscale sized wrinkles could be visualized using TEPL imaging. Detailed investigation of nanoscale exciton funneling at the wrinkles revealed a deformation potential of -54 meV/%. The obtained results provide novel insights into the inhomogeneities of excitonic behaviors at nanoscale and would be helpful in facilitating the rational design of 2D material-based twistronic devices.

Interplay between Thermal Stress and Interface Binding on Fracture of WS2 Monolayer with Triangular Voids

The defect engineering of two-dimensional (2D) materials has become a pivotal strategy for tuning the electrical and optical properties of the material. However, the reliable application of these atomically thin materials in practical devices require careful control of structural defects to avoid premature failure. Herein, a systematic investigation is presented to delineate the complex interactions among structural defects, the role of thermal mismatch between WS₂ monolayer and different substrates, and their consequent effect on the fracture behavior of the monolayer. Detailed microscopic and Raman/PL spectroscopic observations enabled a direct correlation between thermal mismatch stress and crack patterns originating from the corner of faceted voids in the WS₂ monolayer. Aberration-corrected STEM-HAADF imaging reveals the tensile strain localization around the faceted void corners. Density functional theory (DFT) simulations on interfacial interaction between the substrate (Silicon and sapphire -Al₂O₃) and monolayer WS₂ revealed a binding energy between WS₂ and Si substrate is 20 times higher than that with a sapphire substrate. This increased interfacial interaction in WS₂ and substrate-aided thermal mismatch stress arising due to difference in thermal expansion coefficient to a maximum extent leading to fracture in monolayer WS₂. Finite element simulations revealed the stress distribution near the void in the WS₂ monolayer, where the maximum stress was concentrated at the void tip.

Nanoscale Raman Characterization of a 2D Semiconductor Lateral Heterostructure Interface

The nature of the interface in lateral heterostructures of 2D monolayer semiconductors including its composition, size, and heterogeneity critically impacts the functionalities it engenders on the 2D system for next-generation optoelectronics. Here, we use tip-enhanced Raman scattering (TERS) to characterize the interface in a single-layer MoS₂/WS₂ lateral heterostructure with a spatial resolution of 50 nm. Resonant and nonresonant TERS spectroscopies reveal that the interface is alloyed with a size that varies over an order of magnitude─from 50 to 600 nm─within a single crystallite. Nanoscale imaging of the continuous interfacial evolution of the resonant and nonresonant Raman spectra enables the deconvolution of defect activation, resonant enhancement, and material composition for several vibrational modes in single-layer MoS₂, Mo_xW_1-xS₂, and WS₂. The results demonstrate the capabilities of nanoscale TERS spectroscopy to elucidate macroscopic structure-property relationships in 2D materials and to characterize lateral interfaces of 2D systems on length scales that are imperative for devices.

Nano-Thermal Analysis of Defect-Induced Surface Pre-Melting in 2D Tellurium

Thermal properties, such as thermal conductivity, heat capacity, and melting temperature, influence the efficiency and stability of two-dimensional (2D) material applications. However, existing studies on thermal characteristics-except for thermal conductivity-are insufficient for 2D materials. Here, we investigated the melting temperature of 2D Tellurium (2D Te) using the nano-thermal analysis technique and found anomalous behavior that occurs before the melting temperature is reached. The theoretical calculations present surface pre-melting in 2D Te and Raman scattering measurements suggest that defects in 2D Te accelerate surface pre-melting. Understanding the pre-melting surface characteristics of 2D Te will provide valuable information for practical applications.

Multimodal Nanoscopic Study of Atomic Diffusion and Related Localized Optoelectronic Response of WS2/MoS2 Lateral Heterojunctions

The atomic diffusion in transition metal dichalcogenides (TMDs) van der Waals heterojunctions (HJs) strongly modifies their optoelectronic properties in the nanoscale. However, probing such localized properties challenges the spatial resolution and the sensitivity of a variety of analytic tools. Herein, a multimodal nanoscopy (based on tip enhanced Raman spectroscopy (TERS) and photoluminescence (TEPL)) combined with the Kelvin probe force microscopy (KPFM) method was used to probe such nanoscale localized optoelectronic properties induced by atomic diffusion. Chemical vapor deposition (CVD)-grown lateral bilayer (2L) WS₂/MoS₂ HJs were imaged with a spatial resolution better than 40 nm via TERS and TEPL mapping by using intrinsic Raman and photoluminescence (PL) peaks. The contact potential difference (CPD), capacitance, and PL variation in a nanoscale vicinity of the HJ interface can be correlated to the local stoichiometry variation determined by TERS. The diffusion coefficients of W and Mo were obtained to be ∼0.5 × 10^-12 and ∼1 × 10^-12 cm²/s, respectively, by using Fick's second law. The obtained results would be useful to further understand the localized optoelectronic response of the TMDs HJs.

Co-construction of sulfur vacancies and carbon confinement in V5S8/CNFs to induce an ultra-stable performance for half/full sodium-ion and potassium-ion batteries

The construction of anode materials for sodium-ion batteries (SIBs) and potassium-ion batteries (PIBs) with a high energy and a long lifespan is significant and still challenging. Here, sulfur-defective vanadium sulfide/carbon fiber composites (D-V5S8/CNFs) are designed and fabricated by a facile electrospinning method, followed by sulfuration treatment. The unique architecture, in which V5S8 nanoparticles are confined inside the carbon fiber, provides a short-range channel and abundant adsorption sites for ion storage. Moreover, enlarged interlayer spacings could also alleviate the volume changes, and offer small vdW interactions and ionic diffusion resistance to store more Na and K ions reversibly and simultaneously. The DFT calculations further demonstrate that sulfur defects can effectively facilitate the adsorption behavior of Na+ and K+ and offer low energy barriers for ion intercalation. Taking advantage of the functional integration of these merits, the D-V5S8/CNF anode exhibits excellent storage performance and long-term cycling stability. It reveals a high capacity of 462 mA h g-1 at a current density of 0.2 A g-1 in SIBs, while it is 350 mA h g-1 at 0.1 A g-1 in PIBs, as well as admirable long-term cycling characteristics (190 mA h g-1/17 000 cycles/5 A g-1 for SIBs and 165 mA h g-1/3000 cycles/1 A g-1 for PIBs). Practically, full SIBs upon pairing with a Na3V2(PO4)3 cathode also exhibit superior performance.

Probing stacking configurations in a few layered MoS2 by low frequency Raman spectroscopy

Novel two-dimensional (2D) layered materials, such as MoS₂, have recently gained a significant traction, chiefly due to their tunable electronic and optical properties. A major attribute that affects the tunability is the number of layers in the system. Another important, but often overlooked aspect is the stacking configuration between the layers, which can modify their electro-optic properties through changes in internal symmetries and interlayer interactions. This demands a thorough understanding of interlayer stacking configurations of these materials before they can be used in devices. Here, we investigate the spatial distribution of various stacking configurations and variations in interlayer interactions in few-layered MoS₂ flakes probed through the low-frequency Raman spectroscopy, which we establish as a versatile imaging tool for this purpose. Some interesting anomalies in MoS₂ layer stacking, which we propose to be caused by defects, wrinkles or twist between the layers, are also reported here. These types of anomalies, which can severely affect the properties of these materials can be detected through low-frequency Raman imaging. Our findings provide useful insights for understanding various structure-dependent properties of 2D materials that could be of great importance for the development of future electro-optic devices, quantum devices and energy harvesting systems.

Characterization of Excitonic Nature in Raman Spectra Using Circularly Polarized Light

We propose a technique of Raman spectroscopy to characterize the excitonic nature and to evaluate the relative contribution of the two kinds of electron/exciton-phonon interactions that are observed in two-dimensional transition-metal dichalcogenides (TMDCs). In the TMDCs, the electron/exciton-phonon interactions mainly originate from the deformation potential (DP) or the Fröhlich interaction (FI) which give the mutually different Raman tensors. Using a circularly polarized light, the relative proportion of the DP and the FI can be defined by the ratio of helicity-polarized intensity that is observed by MoS₂. By this analysis, we show that the excitonic FI interaction gradually increases with decreasing temperature, contributes equally to DP at ∼230 K, and dominates at lower temperatures. The excitonic effect in the Raman spectra is confirmed by modulating the dielectric environment for the exciton and by changing the laser power.

Perceptible exciton-to-trion conversion and signature of defect mediated vibronic modes and spin relaxation in nanoscale WS2 exposed to γ-rays

In this work, we report manifested optical, optoelectronic and spin-spin relaxation features of a few layered tungsten disulphide (WS₂) nanosheets subjected to energetic γ-photons (∼1.3 MeV) emitted from a Co⁶⁰ source. Upon intense irradiation (dose = 96 kGy), a slight departure from the pure hexagonal phase was realized with the introduction of the trigonal phase at large. Moreover, in the Raman spectra, as a consequence of the radiation-induced effect, an apparent improvement of the E-to-A mode intensity and a reduction in phonon lifetimes have been realized, with the latter being dependent on the linewidths. The emergence of the new peak (D) maxima observable at ∼406 cm^-1 in the Raman spectra and ∼680 nm in the photoluminescence (PL) spectra can be attributed to the introduction of defect centres owing to realization of sulphur vacancies (V _S) in the irradiated nanoscale WS₂. Additionally, neutral exciton to charged exciton (trion) conversion is anticipated in the overall PL characteristics. The PL decay dynamics, while following bi-exponential trends, have revealed ample improvement in both the fast parameter (0.39 ± 0.01 ns to 1.88 ± 0.03 ns) and the slow parameter (2.36 ± 0.03 ns to 12.1 ± 0.4 ns) after γ-impact. We attribute this to the finite band gap expansion and the incorporation of new localized states within the gap, respectively. A declining exciton annihilation rate is also witnessed. The isotropic nature of the electron paramagnetic resonance spectra as a consequence of γ-exposure would essentially characterize a uniform distribution of the paramagnetic species in the system, while predicting a three-fold improvement of relative spin density at 96 kGy. Exploring defect dynamics and spin dynamics in 2D nanoscale systems does not only strengthen fundamental insight but can also offer ample scope for designing suitable components in the areas of miniaturized optoelectronic and spintronic devices.

MoS2 Monolayers on Au Nanodot Arrays: Surface Plasmon, Local Strain, and Interfacial Electronic Interaction

Metal and transition-metal dichalcogenide (TMD) hybrid systems have been attracting growing research attention because exciton-plasmon coupling is a desirable means of tuning the physical properties of TMD materials. Competing effects of metal nanostructures, such as the local electromagnetic field enhancement and luminescence quenching, affect the photoluminescence (PL) characteristics of metal/TMD nanostructures. In this study, we prepared TMD MoS₂ monolayers on hexagonal arrays of Au nanodots and investigated their physical properties by micro-PL and surface photovoltage (SPV) measurements. MoS₂ monolayers on bare Au nanodots exhibited higher PL intensities than those of MoS₂ monolayers on 5-nm-thick Al₂O₃-coated Au nanodots. The Al₂O₃ spacer layer blocked charge transfer at the Au/MoS₂ interface but allowed the transfer of mechanical strain to the MoS₂ monolayers on the nanodots. The SPV mapping results revealed not only the electron-transfer behavior at the Au/MoS₂ contacts but also the lateral drift of charge carriers at the MoS₂ surface under light illumination, which corresponds to nonradiative relaxation processes of the photogenerated excitons.

Incoherent phonon population and exciton-exciton annihilation dynamics in monolayer WS2 revealed by time-resolved Resonance Raman scattering

Atomically thin layer transition metal dichalcogenides have been intensively investigated for their rich optical properties and potential applications on nano-electronics. In this work, we study the incoherent phonon and exciton population dynamics in monolayer WS₂ by time-resolved Resonance Raman scattering spectroscopy. Upon excitation of the exciton transition, both Stokes and anti-Stokes scattering strength of the optical and the longitudinal acoustic two phonon modes exhibit large reduction. Based on the assumption of quasi-equilibrium distribution, the hidden phonon population dynamics is retrieved, which shows an instant build-up and a relaxation lifetime of ∼4 ps at the exciton density ∼10¹²cm^-2. A phonon temperature rises of ∼20 K was identified due to the exciton excitation and relaxation. The exciton relaxation dynamics extracted from the transient vibrational Raman response shows strong excitation density dependence, signaling an important bi-molecular contribution to the decay. These results provide significant knowledge on the thermal dynamics after optical excitation, enhance the understanding of the fundamental exciton dynamics in two-dimensional transition metal materials, and demonstrate that time-resolved Resonance Raman scattering spectroscopy is a powerful method for exploring quasi-particle dynamics in optical materials.

Probing Spatial Phonon Correlation Length in Post-Transition Metal Monochalcogenide GaS Using Tip-Enhanced Raman Spectroscopy

The knowledge of the phonon coherence length is of great importance for two-dimensional-based materials since phonons can limit the lifetime of charge carriers and heat dissipation. Here we use tip-enhanced Raman spectroscopy (TERS) to measure the spatial correlation length L_c of the A_1g¹ and A_1g² phonons of monolayer and few-layer gallium sulfide (GaS). The differences in L_c values are responsible for different enhancements of the A_1g modes, with A_1g¹ always enhancing more than the A_1g², independently of the number of GaS layers. For five layers, the results show an L_c of 64 and 47 nm for A_1g¹ and A_1g², respectively, and the coherence lengths decrease when decreasing the number of layers, indicating that scattering with the surface roughness plays an important role.

A relative study on sonochemically synthesized mesoporous WS2 nanorods & hydrothermally synthesized WS2 nanoballs towards electrochemical sensing of psychoactive drug (Clonazepam)

In this paper, mesoporous tungsten sulfide electrocatalyst (MP-WS₂) were developed through a facile sonochemical technique (SC) and utilized as an electrocatalyst for the sensitive electrochemical detection of Psychoactive drug. The as-prepared SC-MP-WS₂ NRs and HT-WS₂ NPs (hydrothermally synthesized) were characterized using XRD, Raman, XPS, FESEM, HRTEM, BET, EDX, and electrochemical analysis, which exposed the formation of WS₂ in the form of mesoporous nanorods in shape. Further, the use of the as-developed SC-MP-WS₂ NRs and HT-WS₂ NPs as an electrocatalyst for the detection of clonazepam (CNP). Interestingly, the SC-MP-WS₂ NRs modified screen-printed carbon electrode (SC-MP-WS₂ NRs/SPCE) exhibited an excellent electrocatalytic performance, and enhanced reduction peak current when compared to HT-WS₂ NPs with unmodified electrode. Moreover, as-prepared SC-MP-WS₂ NRs/SPCE displayed wide linear response range (10-551 µM), lower detection limit (2.37 nM) and high sensitivity (24.32 µAµM^-1cm^-2). Furthermore, SC-MP-WS₂ NRs/SPCE showed an excellent selectivity even in the existence of potentially co-interfering compounds. The proposed sensor was successfully applied for the determination of CNP in biological and drug samples with acceptable recovery.