Orthogonal Lithography for Halide Perovskite Optoelectronic Nanodevices

2D Hybrid Perovskite Sensors for Environmental and Healthcare Monitoring

Layered perovskites, a novel class of two-dimensional (2D) layered materials, exhibit versatile photophysical properties of great interest in photovoltaics and optoelectronics. However, their instability to environmental factors, particularly water, has limited their utility. In this study, we introduce an innovative solution to the problem by leveraging the unique properties of natural beeswax as a protective coating of 2D-fluorinated phenylethylammonium lead iodide perovskite. These photodetectors show outstanding figures of merit, such as a responsivity of >2200 A/W and a detectivity of 2.4 × 1018 Jones. The hydrophobic nature of beeswax endows the 2D perovskite sensors with an unprecedented resilience to prolonged immersion in contaminated water, and it increases the lifespan of devices to a period longer than one year. At the same time, the biocompatibility of the beeswax and its self-cleaning properties make it possible to use the very same turbidity sensors for healthcare in photoplethysmography and monitor the human heartbeat with clear systolic and diastolic signatures. Beeswax-enabled multipurpose optoelectronics paves the way to sustainable electronics by ultimately reducing the need for multiple components.

Cryogenic Electron-Beam Writing for Perovskite Metasurface

Halide perovskites (HPs) metasurfaces have recently attracted significant interest due to their potential to not only further enhance device performance but also reveal the unprecedented functionalities and novel photophysical properties of HPs. However, nanopatterning on HPs is critically challenging as they are readily destructed by the organic solvents in the standard lithographic processes. Here, we present a novel, subtle, and fully nondestructive HPs metasurface fabrication strategy based on cryogenic electron-beam writing. This technique allows for high-precision patterning and in situ imaging of HPs with excellent compatibility. As a proof-of-concept, broadband absorption enhanced metasurfaces were realized by patterning nanopillar arrays on CH3NH3PbI3 film, which results in photodetectors with approximately 14-times improvement on responsivity and excellent stability. Our findings highlight the great feasibility of cryogenic electron-beam writing for producing perovskite metasurface and unlocking the unprecedented photoelectronic properties of HPs.

Passivation of Organic-Inorganic Hybrid Perovskite with Poly(lactic Acid) to Achieve Stable Red-Light Flexible Films

Low-dimensional organic-inorganic hybrid perovskites (OIHPs) have shown significant potential in the optoelectronic field due to their adjustable structure and properties. However, the poor air stability and flexibility of the OIHP crystals limit their further development. Herein, three OIHP crystals have been synthesized using cadmium chloride and the isomer of phenylenediamine as raw materials. Mn2+ doping turns on the red-light emission of Cd-based OIHPs at around 625 nm. Interestingly, the organic ligands with different steric hindrance can induce a transition of the OIHP structure from two dimensions (2D) to one dimension (1D), thereby regulating the quantum yield of red luminescence in the range of 38.4% to nearly 100%. It is found that the surface-exposed amino groups are easy to oxidize, resulting in the instability of these OIHP crystals. Therefore, poly(lactic acid) (PLA) is selected to passivate OIHPs through hydrogen bonding between C═O of PLA and -NH2 on the surface of OIHPs. As a result, the production of OIHP-based flexible films with highly efficient and stable red emission can be obtained after being encapsulated by PLA. They demonstrate enormous application potential in flexible X-ray imaging. This study not only realizes stable perovskite films but also provides an effective design idea for red flexible scintillators.

Tunable Periodic Nanopillar Array for MAPbI3 Perovskite Photodetectors with Improved Light Absorption

In the field of optoelectronic applications, the vigorous development of organic-inorganic hybrid perovskite materials, such as methylammonium lead triiodide (MAPbI3), has spurred continuous research on methods to enhance the photodetection performance. Periodic nanoarrays can effectively improve the light absorption of perovskite thin films. However, there are still challenges in fabricating tunable periodic patterned and large-area perovskite nanoarrays. In this study, we present a cost-effective and facile approach utilizing nanosphere lithography and dry etching techniques to create a large-area Si nanopillar array, which is employed for patterning MAPbI3 thin films. The scanning electron microscopy (SEM) and X-ray diffraction (XRD) results reveal that the introduction of nanopillar structures did not have a significant adverse effect on the crystallinity of the MAPbI3 thin film. Light absorption tests and optical simulations indicate that the nanopillar array enhances the light intensity within the perovskite films, leading to photodetectors with a responsivity of 11.2 A/W and a detectivity of 7.3 × 1010 Jones at 450 nm in wavelength. Compared with photodetectors without nanostructures, these photodetectors exhibit better visible light absorption. Finally, we demonstrate the application of these photodetector arrays in a prototype image sensor.

Inorganic Halide Perovskite Quantum Dots: A Versatile Nanomaterial Platform for Electronic Applications

Metal halide perovskites have generated significant attention in recent years because of their extraordinary physical properties and photovoltaic performance. Among these, inorganic perovskite quantum dots (QDs) stand out for their prominent merits, such as quantum confinement effects, high photoluminescence quantum yield, and defect-tolerant structures. Additionally, ligand engineering and an all-inorganic composition lead to a robust platform for ambient-stable QD devices. This review presents the state-of-the-art research progress on inorganic perovskite QDs, emphasizing their electronic applications. In detail, the physical properties of inorganic perovskite QDs will be introduced first, followed by a discussion of synthesis methods and growth control. Afterwards, the emerging applications of inorganic perovskite QDs in electronics, including transistors and memories, will be presented. Finally, this review will provide an outlook on potential strategies for advancing inorganic perovskite QD technologies.

High Performance 0D ZnO Quantum Dot/2D (PEA)2PbI4 Nanosheet Hybrid Photodetectors Fabricated via a Facile Antisolvent Method

Two-dimensional (2D) organic-inorganic perovskites have great potential for the fabrication of next-generation photodetectors owing to their outstanding optoelectronic features, but their utilization has encountered a bottleneck in anisotropic carrier transportation induced by the unfavorable continuity of the thin films. We propose a facile approach for the fabrication of 0D ZnO quantum dot (QD)/2D (PEA)₂PbI₄ nanosheet hybrid photodetectors under the atmospheric conditions associated with the ZnO QD chloroform antisolvent. Profiting from the antisolvent, the uniform morphology of the perovskite thin films is obtained owing to the significantly accelerated nucleation site formation and grain growth rates, and ZnO QDs homogeneously decorate the surface of (PEA)₂PbI₄ nanosheets, which spontaneously passivate the defects on perovskites and enhance the carrier separation by the well-matched band structure. By varying the ZnO QD concentration, the Ion/Ioff ratio of the photodetectors radically elevates from 78.3 to 1040, and a 12-fold increase in the normalized detectivity is simultaneously observed. In addition, the agglomeration of perovskite grains is governed by the annealing temperature, and the photodetector fabricated at a relatively low temperature of 120 °C exhibits excellent stability after a 50-cycle test in the air condition without any encapsulation.

Wafer-Scale Photolithography-Pixeled Pb-Free Perovskite X-ray Detectors

Pb-free perovskite material is considered to be a promising material utilized in next-generation X-ray detectors due to its high X-ray absorption coefficient, decent carrier transport properties, and relatively low toxicity. However, the pixelation of the perovskite material with an industry-level photolithography processing method remains challenging due to its poor structural stability. Herein, we use Cs₂AgBiBr₆ perovskite material as the prototype and investigate its interaction with photolithographic polar solvents. Inspired by that, we propose a wafer-scale photolithography patterning method, where the pixeled perovskite array devices for X-ray detection are successfully prepared. The devices based on pixeled Pb-free perovskite material show a high detection sensitivity up to 19118 ± 763 μC Gy_air^-1 cm^-2, which is comparable to devices with Pb-based perovskite materials and superior to the detection sensitivity (∼20 μC Gy_air^-1 cm^-2) of the commercial a-Se detector. After pixelation, the devices achieve an improved spatial resolution capacity with the spatial frequency from 2.7 to 7.8 lp mm^-1 at modulation-transfer-function (MTF) = 0.2. Thus, this work may contribute to the development of high-performance array X-ray detectors based on Cs₂AgBiBr₆ perovskite material.

Perovskite-Compatible Electron-Beam-Lithography Process Based on Nonpolar Solvents for Single-Nanowire Devices

Metal halide perovskites (MHPs) have been studied intensely as the active material for optoelectronic devices. Lithography methods for perovskites remain limited because of the solubility of perovskites in polar solvents. Here, we demonstrate an electron-beam-lithography process with a poly(methyl methacrylate) resist based on the nonpolar solvents o-xylene, hexane, and toluene. Features down to 50 nm size are created, and photoluminescence of CsPbBr₃ nanowires exhibits no degradation. We fabricate metal contacts to single CsPbBr₃ nanowires, which show a strong photoresponsivity of 0.29 A W^-1. The presented method is an excellent tool for nanoscale MHP science and technology, allowing for the fabrication of complex nanostructures.

Perovskite metasurfaces with large superstructural chirality

Recent attempts to synthesize hybrid perovskites with large chirality have been hampered by large size mismatch and weak interaction between their structure and the wavelength of light. Here we adopt a planar nanostructure design to overcome these limitations and realize all-dielectric perovskite metasurfaces with giant superstructural chirality. We identify a direct spectral correspondence between the near- and the far- field chirality, and tune the electric and magnetic multipole moments of the resonant chiral metamolecules to obtain large anisotropy factor of 0.49 and circular dichroism of 6350 mdeg. Simulations show that larger area metasurfaces could yield even higher optical activity, approaching the theoretical limits. Our results clearly demonstrate the advantages of nanostructrure engineering for the implementation of perovskite chiral photonic, optoelectronic, and spintronic devices.

Though chiral hybrid organic-inorganic perovskites are attractive for next-generation optoelectronics, imparting strong chirality through chemical synthesis has proved challenging. Here, the authors report all-dielectric perovskite metasurfaces with giant superstructural chirality via planar nanostructuring.

Acoustics-Actuated Microrobots

Microrobots can operate in tiny areas that traditional bulk robots cannot reach. The combination of acoustic actuation with microrobots extensively expands the application areas of microrobots due to their desirable miniaturization, flexibility, and biocompatibility features. Herein, an overview of the research and development of acoustics-actuated microrobots is provided. We first introduce the currently established manufacturing methods (3D printing and photolithography). Then, according to their different working principles, we divide acoustics-actuated microrobots into three categories including bubble propulsion, sharp-edge propulsion, and in-situ microrotor. Next, we summarize their established applications from targeted drug delivery to microfluidics operation to microsurgery. Finally, we illustrate current challenges and future perspectives to guide research in this field. This work not only gives a comprehensive overview of the latest technology of acoustics-actuated microrobots, but also provides an in-depth understanding of acoustic actuation for inspiring the next generation of advanced robotic devices.

Perovskite-Type 2D Materials for High-Performance Photodetectors

Photodetectors are light sensors in widespread use in image sensing, optical communication, and consumer electronics. In current smart optoelectronic technology, conventional semiconductors have encountered a bottleneck caused by inflexibility and opacity. With the ever-increasing demands for versatile optoelectronic applications, perovskite-type 2D materials demonstrate great potential for advanced photodetectors inspired by molecularly thin 2D materials. Through the reduction of thickness to thin or molecularly thin levels, single-crystalline 2D perovskites can exhibit superior optoelectronic performance characteristics, such as tunable absorption property by chemical design, enhanced carrier separation by remarkable photosensing capability, and improved carrier extraction by versatile band engineering. More importantly, perovskite-type 2D materials exhibit great potential for large-scale monolithic integration to achieve all-in-one sensing-memory-computing optoelectronic devices. In this Perspective, recent progress in 2D perovskite-based photodetectors is presented in detail. The focus is on growth strategies for reducing thickness, thickness-dependent optical and electrical properties, device engineering, heterojunction fabrication, and device performance. Finally, the current challenges and future prospects in this field are presented.

In situ construction of a Te/CsPbBr3 heterojunction for self-powered photodetector

In this study, CsPbBr3 particles were prepared by a simple solvent evaporation method in ambient environment; the p-n heterojunction formed by CsPbBr3 particles on the surface of a single long Te wire was used to construct a high-performance Te/CsPbBr3 photodetector. Compared with CsPbBr3 PDs, the Te/CsPbBr3 photodetector showed improved photocurrent, and exhibited characteristics of excellent self-powered performance, broad-spectrum response (UV-visible), and ultra-fast response speed (t rise = 0.09 ms). In addition, under zero bias and upon 540 nm light irradiation, the device had good responsivity (0.35 mA W-1), high photosensitivity (up to 100 on/off ratio), and a detectivity of 1.42 × 1010 Jones. This study provides insight into the possibility of manufacturing high-performance self-powered photodetectors through a simple in situ construction of heterojunctions.

Highly Efficient Quasi-2D Perovskite Light-Emitting Diodes Incorporating a TADF Dendrimer as an Exciton-Retrieving Additive

Although small organics or polymer additives have been introduced to enhance film formation and radiative recombination of perovskite light-emitting diodes (PeLEDs), the exciton utilization and quantum efficiency need further optimization. Here, we introduce a thermal-activated delayed fluorescence (TADF) dendrimer as an additive to enhance the surface coverage and reduce the trap state of the grain boundary. More importantly, the TADF nature of such an additive can retrieve the exciton dissociated from perovskite or trapped by the grain boundary and then transfer the energy back to emissive perovskite through the Förster energy transfer process. Since the triplets can be reused by reverse intersystem crossing in such a TADF additive, the theoretical exciton utilization is 100%. As a result, the optimized PeLEDs cooperating with a TADF additive achieved a high current efficiency of 39.0 cd A^-1 and an ultrabright luminescence of 18,000 cd m^-2, which are almost 5 times higher than those of the control device without an additive. Moreover, the device stability monitored by half-lifetime at 1000 cd m^-2 enhanced 2 times after introducing the TADF dendrimer as an additive. The parent dendrimer without a TADF feature was also synthesized as an additive to explore the mechanism action, which found that 54% enhancement of device efficiency can be attributed to defect passivating, while 46% was assigned to retrieved energy. This research first demonstrates that the TADF dendrimer is a promising exciton-retrieving additive for enhancing the performance of PeLEDs by passivating defect, filling up grain boundary, and retrieving leakage exciton.

Highly Selective Self-Powered Organic-Inorganic Hybrid Heterojunction of a Halide Perovskite and InGaZnO NO2 Sensor

Self-powered sensors can lead to disruptive advances in self-sustainable sensing systems that are imperative for evolving human lifestyles. For the first time, we demonstrate the fabrication of a heterojunction sensor using p-type hybrid-halide perovskites (CH₃NH₃PbBr₃) and an n-type semiconducting metal oxide thin film [InGaZnO (IGZO)] for the detection of NO₂ gas and power generation. Combining the excellent photoelectric properties of perovskites and the remarkable gas-sensing properties of IGZO at room temperature, the devised sensors generate open-circuit voltage and modulate according to the ambient NO₂ concentration. The major challenge in devising self-powered gas sensors is to attain harvesting capability and selectivity simultaneously, owing to perovskites reactivity in the presence of oxygen and humidity. In this work, we developed a novel approach and fabricated a heterojunction sensor using parylene-c as an additional layer to curb the cross-sensitivity and to enhance the selectivity of the sensor. Even under the low concentrations of NO₂, the developed sensor exhibits remarkable sensitivity, selectivity, and repeatability. The devices are sensitive and robust even under extreme humidity conditions (80% R_H) and synthetic air. The devised sensor configuration is one way to eliminate the cross-sensitivity issue of the perovskite-based devices and serves as a reference for the development of self-powered sensors.

Single-Step Dual-Layer Photolithography for Tunable and Scalable Nanopatterning

Conventional photolithography, due to its scalability, robustness, and straightforward processes, has been widely applied to micro- and nanostructure manufacturing in electronics, optics, and biology. However, optical diffraction limits the ultimate resolution of conventional photolithography, which hinders its potential in nanoscale patterning for broader applications. Here, we introduce a derivative of conventional photolithography for nanoscale patterning called dual-layer photolithography (DLPL), which is based on the controlled exposure and development of overlapping positive and negative photoresists. In a typical experiment, substrates are sequentially coated by two layers of photoresists (both positive and negative). Then, we purposefully control the exposure time to generate slightly larger features in the positive photoresist than those in the negative photoresist. After development, their overlapping areas become the final features, which outline the original features. We demonstrate line widths down to 300 nm here, which can be readily improved with more precise control. By adjusting the lithography parameters and material deposition, the feature sizes, shapes (e.g., rings, numbers, letters), line widths (300-900 nm), and materials (e.g., SiO₂, Cr, and Ag) of these features can be independently controlled. Combined with anisotropic etching, more complex three-dimensional nanostructures can be fabricated as well, as we demonstrate here with Si. We further fabricate photodetectors as an example application to show that these nanostructures fabricated by DLPL can be used to promote light-trapping MAPbI₃ perovskite films to achieve good photoelectric properties. This strategy is not limited to ultraviolet photolithography and may also be incorporated into other energetic beam-based lithographic approaches, including deep and extreme ultraviolet photolithographies and electron beam lithography, to enhance their resolution.

Free Charge Carriers in Homo-Sorted π-Stacks of Donor-Acceptor Conjugates

Inspired by the high photoconversion efficiency observed in natural light-harvesting systems, the hierarchical organization of molecular building blocks has gained impetus in the past few decades. Particularly, the molecular arrangement and packing in the active layer of organic solar cells (OSCs) have garnered significant attention due to the decisive role of the nature of donor/acceptor (D/A) heterojunctions in charge carrier generation and ultimately the power conversion efficiency. This review focuses on the recent developments in emergent optoelectronic properties exhibited by self-sorted donor-on-donor/acceptor-on-acceptor arrangement of covalently linked D-A systems, highlighting the ultrafast excited state dynamics of charge transfer and transport. Segregated organization of donors and acceptors promotes the delocalization of photoinduced charges among the stacks, engendering an enhanced charge separation lifetime and percolation pathways with ambipolar conductivity and charge carrier yield. Covalently linking donors and acceptors ensure a sufficient D-A interface and interchromophoric electronic coupling as required for faster charge separation while providing better control over their supramolecular assemblies. The design strategies to attain D-A conjugate assemblies with optimal charge carrier generation efficiency, the scope of their application compared to state-of-the-art OSCs, current challenges, and future opportunities are discussed in the review. An integrated overview of rational design approaches derived from the comprehension of underlying photoinduced processes can pave the way toward superior optoelectronic devices and bring in new possibilities to the avenue of functional supramolecular architectures.

High-Performance MoS2 Photodetectors Prepared Using a Patterned Gallium Nitride Substrate

Strain-adjusting the band gap of MoS₂ using patterned substrates to improve the photoelectric performance of MoS₂ has gradually become a research hotspot in recent years. However, there are still difficulties in obtaining high-quality two-dimensional materials and preparing photodetectors on patterned substrates. To overcome this, a continuous multilayer MoS₂ film was transferred to a patterned gallium nitride substrate (PGS) for the fabrication of photodetectors, and density functional theory calculations showed that the band gap of the MoS₂ film increased and that the electron effective mass decreased due to the introduction of PGS. In addition, finite difference time domain simulation showed that the electric field in the MoS₂ area on the PGS is enhanced compared with that on the flat gallium nitride substrate due to the enhanced light scattering effect of the PGS. The photoresponse of the MoS₂/PGS photodetector at 460 nm was also enhanced, with I_ph increasing by 5 times, R increasing by 2 times, NEP decreasing to 3.88 × 10^-13 W/Hz^1/2, and D* increasing to 5.6 × 10⁸ Jones. Our research has important guiding significance in adjusting the band gap of MoS₂ and enhancing the photoelectric performance of MoS₂ photodetectors.

High performing flexible optoelectronic devices using thin films of topological insulator

Topological insulators (TIs) possess exciting nonlinear optical properties due to presence of metallic surface states with the Dirac fermions and are predicted as a promising material for broadspectral phodotection ranging from UV (ultraviolet) to deep IR (infrared) or terahertz range. The recent experimental reports demonstrating nonlinear optical properties are mostly carried out on non-flexible substrates and there is a huge demand for the fabrication of high performing flexible optoelectronic devices using new exotic materials due to their potential applications in wearable devices, communications, sensors, imaging etc. Here first time we integrate the thin films of TIs (Bi₂Te₃) with the flexible PET (polyethylene terephthalate) substrate and report the strong light absorption properties in these devices. Owing to small band gap material, evolving bulk and gapless surface state conduction, we observe high responsivity and detectivity at NIR (near infrared) wavelengths (39 A/W, 6.1 × 10⁸ Jones for 1064 nm and 58 A/W, 6.1 × 10⁸ Jones for 1550 nm). TIs based flexible devices show that photocurrent is linearly dependent on the incident laser power and applied bias voltage. Devices also show very fast response and decay times. Thus we believe that the superior optoelectronic properties reported here pave the way for making TIs based flexible optoelectronic devices.

Growth and Interlayer Engineering of 2D Layered Semiconductors for Future Electronics

Layered materials that do not form a covalent bond in a vertical direction can be prepared in a few atoms to one atom thickness without dangling bonds. This distinctive characteristic of limiting thickness around the sub-nanometer level allowed scientists to explore various physical phenomena in the quantum realm. In addition to the contribution to fundamental science, various applications were proposed. Representatively, they were suggested as a promising material for future electronics. This is because (i) the dangling-bond-free nature inhibits surface scattering, thus carrier mobility can be maintained at sub-nanometer range; (ii) the ultrathin nature allows the short-channel effect to be overcome. In order to establish fundamental discoveries and utilize them in practical applications, appropriate preparation methods are required. On the other hand, adjusting properties to fit the desired application properly is another critical issue. Hence, in this review, we first describe the preparation method of layered materials. Proper growth techniques for target applications and the growth of emerging materials at the beginning stage will be extensively discussed. In addition, we suggest interlayer engineering via intercalation as a method for the development of artificial crystal. Since infinite combinations of the host-intercalant combination are possible, it is expected to expand the material system from the current compound system. Finally, inevitable factors that layered materials must face to be used as electronic applications will be introduced with possible solutions. Emerging electronic devices realized by layered materials are also discussed.

Additive Modulated Perovskite Microstructures for High Performance Photodetectors

Organic-inorganic hybrid perovskites have been widely used as light sensitive components for high-efficient photodetectors due to their superior optoelectronic properties. However, the unwanted crystallographic defects of perovskites typically result in high dark current, and thus limit the performance of the device. Herein, we introduce a simple route of microstructures control in MAPbI₃ perovskites that associates with introducing an additive of 3,3,4,4-benzophenonetetracarboxylic dianhydridean (BPTCD) for crystallization adjustment of the perovskite film. The BPTCD additive can facilitate the formation of high-quality perovskite film with a compact and nearly pinhole-free morphology. Through characterizing the molecular interactions, it was found that the carbonyl groups in BPTCD is the key reason that promoted the nucleation and crystallization of MAPbI₃. As a result, we obtained high-efficient and stable perovskite photodetectors with low dark current of 9.98 × 10^-8 A at -0.5 V, an on/off ratio value of 10³, and a high detectivity exceeding 10¹² Jones over the visible region.

Red Light-Emitting Diodes with All-Inorganic CsPbI3/TOPO Composite Nanowires Color Conversion Films

This work presents a method for obtaining a color-converted red light source through a combination of a blue GaN light-emitting diode and a red fluorescent color conversion film of a perovskite CsPbI3/TOPO composite. High-quality CsPbI3 quantum dots (QDs) were prepared using the hot-injection method. The colloidal QD solutions were mixed with different ratios of trioctylphosphine oxide (TOPO) to form nanowires. The color conversion films prepared by the mixed ultraviolet resin and colloidal solutions were coated on blue LEDs. The optical and electrical properties of the devices were measured and analyzed at an injection current of 50 mA; it was observed that the strongest red light intensity was 93.1 cd/m2 and the external quantum efficiency was 5.7% at a wavelength of approximately 708 nm when CsPbI3/TOPO was 1:0.35.

Illumination-Induced Phase Segregation and Suppressed Solubility Limit in Br-Rich Mixed-Halide Inorganic Perovskites

Mixing halides in perovskites has emerged as an effective strategy for tuning the band gap for optoelectronic applications and tackling the stability bottleneck. However, notable photoluminescence evolution has been observed in mixed-halide perovskites under external stimuli such as light illumination, which is attributed to phase segregation with halide inhomogeneity. In this work, we investigate the light illumination effect on the optical properties of all-inorganic mixed-halide perovskite CsPb(Br_1-xI_x)₃ in the Br-rich regime. It is found that the critical iodine concentration, defined as the solubility limit against phase segregation, is significantly suppressed by light illumination to an extremely low level (x < 0.025), although the formation energy calculation suggests a wide range of halide mixing. Furthermore, at high I concentrations (x ≥ 0.2), the phase segregation can be rectified via dark storage within 1 h, but much slower and incomplete reversibility is observed at lower I concentrations. In the all-inorganic mixed-halide perovskite films, the light-induced phase segregation above the solubility limit is also accompanied by a monotonous increase in fluorescence lifetime. Last, we propose that light-induced phase segregation enables the potential application of encrypting erasable information in perovskite films with the aid of tailored light exposure and photoluminescence mapping.

Enhanced stability in CH3NH3PbI3 hybrid perovskite from mechano-chemical synthesis: structural, microstructural and optoelectronic characterization

Among the hybrid organic-inorganic perovskites MAPbX₃ (MA: methyl-ammonium CH₃-NH₃⁺, X = halogen), the triiodide specimen (MAPbI₃) is still the material of choice for solar energy applications. Although it is able to absorb light above its 1.6 eV bandgap, its poor stability in humid air atmosphere has been a major drawback for its use in solar cells. However, we discovered that this perovskite can be prepared by ball milling in a straightforward way, yielding specimens with a superior stability. This fact allowed us to take atomic-resolution STEM images for the first time, with sufficient quality to unveil microscopic aspects of this material. We demonstrated full Iodine content, which might be related to the enhanced stability, in a more compact PbI₆ framework with reduced unit-cell volume. A structural investigation from neutron powder diffraction (NPD) data of an undeuterated specimen was essential to determine the configuration of the organic MA unit in the 100-298 K temperature range. A phase transition is identified, from the tetragonal structure observed at RT (space group I4/mcm) to an orthorhombic (space group Pnma) phase where the methyl-ammonium organic units are fully localized. Our NPD data reveal that the MA changes are gradual and start before reaching the phase transition. Optoelectronic measurements yield a photocurrent peak at an illumination wavelength of 820 nm, which is redshifted by 30 nm with respect to previously reported measurements on MAPbI₃ perovskites synthesized by crystallization from organic solvents.

Flexible perylenediimide/GaN organic-inorganic hybrid system with exciting optical and interfacial properties

We report the band gap tuning and facilitated charge transport at perylenediimide (PDI)/GaN interface in organic–inorganic hybrid nanostructure system over flexible titanium (Ti) foil. Energy levels of the materials perfectly align and facilitate high efficiency charge transfer from electron rich n-GaN to electron deficient PDI molecules. Proper interface formation resulted in band gap tuning as well as facilitated electron transport as evident in I–V characteristics. Growth of PDI/GaN hybrid system with band gap tuning from ultra-violet to visible region and excellent electrical properties open up new paradigm for fabrication of efficient optoelectronics devices on flexible substrates.

Importance of Bi-O Bonds at the Cs2AgBiBr6 Double-Perovskite/Substrate Interface for Crystal Quality and Photoelectric Performance

Interface interactions between perovskite materials and substrates are of great significance for the development of high-quality perovskite materials. Herein, we have successfully prepared Cs₂AgBiBr₆ double-perovskite films via a one-step spin-coating process and demonstrated a novel approach that modifies the surface of substrates with an ultrathin metal oxide (MO_x) layer to promote the film quality and photoelectric performance. Characterization results strongly suggest that the improvement is attributed to the Bi-O interfacial interaction at substrate/perovskite interface. Benefiting from this interface interaction, the average grain size of Cs₂AgBiBr₆ films has remarkably risen up to ∼500 nm, which is nearly four times larger than the one directly deposited on a commercial fluorine-doped tin oxide substrate. Meanwhile, the pin hole surface area ratio has reduced from 2.61 to 0.60%. Furthermore, the corresponding photodetectors (PDs) have been fabricated and the performance has significantly improved owing to the enhanced Cs₂AgBiBr₆ film quality. The on-off ratio of the optimized PD has a boost of almost 10 times. In addition, the minimum detected irradiation has decreased from 9.7 × 10^-8 to 1.9 × 10^-9 W cm^-2, as well as the maximum detectivity has increased from 3.3 × 10¹¹ to 1.2 × 10¹³ Jones. These results suggest a feasible method for crystallization improvement of double-perovskite films and indicate promising promotion of photoelectric performance.

Inkjet-Printed Imbedded Graphene Nanoplatelet/Zinc Oxide Bulk Heterojunctions Nanocomposite Films for Ultraviolet Photodetection

A ZnO sol-gel precursor (ZnOPr) and graphene nanoplatelets (GnPs) are mixed into a composite ink for inkjet printing photodetectors with bulk heterojunctions of ZnO/GnP on a heated SiO2/Si substrate. Heating of the SiO2/Si wafers at ∼50 °C was found optimal to prevent segregated droplets on the hydrophobic surface of the SiO2/Si substrate during printing. After printing the ZnO/GnP channels, thermal annealing at 350 °C for 2 h was performed for crystallization of ZnO and formation of the ZnO/GnP heterojunctions. The GnP concentration was varied from 0, 5, 20, and 30 mM to evaluate optimal formation of the ZnO/GnP bulk heterojunction nanocomposites based on ultraviolet photoresponse performance. The best performance was observed at the 20 mM GnP concentration with the photoresponsivity reaching 2.2 A/W at an incident ultraviolet power of 2.2 μW and a 5 V bias. This photoresponsivity is an order of magnitude better than the previously reported counterparts, including 0.13 mA/W for dropcasted ZnO-graphite composites and much higher than 0.5 A/W for aerosol printed ZnO. The improved performance is attributed to the ZnO/GnP bulk heterojunctions with improved interfaces that enable efficient exciton dissociation and the charge transport. The developed inkjet printing of sol-gel composite inks approach can be scalable and low cost for practical applications.

Vapor Phase Selective Growth of Two-Dimensional Perovskite/WS2 Heterostructures for Optoelectronic Applications

Organic-inorganic hybrid perovskites have attracted increased interest owing to their exceptional optoelectronic properties and promising applications. Monolayers of transition metal dichalcogenides (TMDCs), such as tungsten disulfide (WS₂), are also intriguing because of their unique optoelectronic properties and their atomically thin and flexible structures. Therefore, the combination of these different types of materials is very attractive in terms of fundamental science of interface interaction, as well as for the realization of ultrathin optoelectronic devices with high performance. Here, we demonstrate the controlled synthesis of two-dimensional (2D) perovskite/WS₂ heterostructures by an all vapor-phase growth approach. This involves the chemical vapor deposition (CVD) growth of monolayer WS₂, followed by the vapor-phase selective deposition of 2D PbI₂ onto the WS₂ with the successive conversion of PbI₂ to organic-inorganic perovskite (CH₃NH₃PbI₃). Moreover, the selective growth of the perovskite on prepatterned WS₂ enables the direct synthesis of patterned heterostructures, avoiding any damage to the perovskite. The photodetectors utilizing the perovskite/WS₂ heterostructure show increased responsivities compared with isolated thin perovskite obtained by conventional solution methods. The integration of 2D perovskite with TMDCs opens a new avenue to fabricate advanced devices by combining their unique properties and overcoming current processing difficulties of perovskites.

Photodetecting Heterostructures from Graphene and Encapsulated Colloidal Quantum Dot Films

Heterostructure devices consisting of graphene and colloidal quantum dots (QDs) have been remarkably successful as photodetectors and have opened the door to technological applications based on the combination of these low-dimensional materials. This work explores the photodetection properties of a heterostructure consisting of a graphene field effect transistor covered by a film of silica-encapsulated colloidal QDs. Defects at the surface of the silica shell trap optically excited charge carriers, which simultaneously enables photodetection via two mechanisms: photogating, resulting in a net p-doping of the device, and Coulombic scattering of charge carriers in the graphene, producing an overall decrease in the current magnitude.

Stretchable and Highly Sensitive Optical Strain Sensors for Human-Activity Monitoring and Healthcare

Flexible and stretchable strain sensors are essential to developing smart wearable devices for monitoring human activities. Such sensors have been extensively exploited with various conductive materials and structures, which, however, are normally in need of complex manufacturing processes and confronted with the challenge to achieve both large stretchability and high sensitivity. Here, we report a simple and low-cost optical strategy for the design of stretchable strain sensors which are capable of measuring large strains of 100% with a low detection limit (±0.09%), a fast responsivity (<12 ms), and high reproducibility (over 6000 cycles). The optical strain sensor (OS²) is fabricated by assembling plasmonic gold nanoparticles (GNPs) in stretchable elastomer-based optical fibers, where a core/cladding structure with step-index configuration is adopted for light confinement. The stretchable, GNP-incorporated optical fiber shows strong localized surface plasmon resonance effects that enable sensitive and reversible detection of strain deformations with high linearity and negligible hysteresis. The unique mechanical and sensing properties of the OS² enable its assembling into clothing or mounting on skin surfaces for monitoring various human activities from physiological signals as subtle as wrist pulses to large motions of joint bending and hand gestures. We further apply the OS² for quantitative analysis of motor disorders such as Parkinson's disease and demonstrate its compatibility in strong electromagnetic interference environments during functional magnetic resonance imaging, showing great promises for diagnostics and assessments of motor neuron diseases in clinics.

Millimeter-Sized Single-Crystal CsPbrB3/CuI Heterojunction for High-Performance Self-Powered Photodetector

Millimeter-sized CsPbBr₃ single crystals were prepared via a facile solvent-evaporation method in ambient environment. The heterojunction between p-type CuI and n-type CsPbBr₃ was formed by a simple immersion process. The as-integrated CsPbBr₃/CuI device exhibits a good rectifying behavior (ratio of 250 at ±2 V). In particular, the photodetector shows excellent self-powered characteristics under 540 nm light illumination, including high photocurrent (near 100 nA); high photosensitivity (on/off ratio of 1.5 × 10³); fast response speed (0.04/2.96 ms); and good wavelength selectivity (565-525 nm), responsivity (1.4 mA W^-1), and detectivity (6.2 × 10¹⁰ Jones). This work provides a simple, low-cost, and effective method for preparing millimeter-level CsPbBr₃ single crystals. The simple device architecture further provides a promising approach for fabricating high-performance self-powered photodetectors.