Three-Dimensional Topological Insulator Bi2Te3/Organic Thin Film Heterojunction Photodetector with Fast and Wideband Response from 450 to 3500 Nanometers

A Bi2Te3 topological insulator/carbon nanotubes hybrid composites as a new counter electrode material for DSSC and NIR photodetector application

Two-dimensional layered bismuth telluride (Bi2Te3), a prominent topological insulator, has garnered global scientific attention for its unique properties and potential applications in optoelectronics and electrochemical devices. Notably, there is a growing emphasis on improving photon-to-electron conversion efficiency in dye-sensitized solar cells (DSSCs), prompting the exploration of alternatives to noble metal catalysts like platinum (Pt). This study presents the synthesis of Bi2Te3 and its hybrid nanostructure with single-wall carbon nanotubes (SWCNT) via a straightforward hydrothermal process. The research unveils a novel application for the Bi2Te3-SWCNT hybrid structure, serving as a counter electrode in platinum-free DSSCs, facilitating the conversion of triiodide (I3-) to iodide (I-) and functioning as an active electrode material in a photodetector (n-Bi2Te3-SWCNT/p-Si). The resulting DSSC employing the Bi2Te3-SWCNT hybrid counter electrode achieves a power conversion efficiency (PCE) of 4.2 %, a photocurrent density of 10.5 mA/cm2, a fill factor (FF) of 62 %, and superior charge transfer kinetics compared to pristine Bi2Te3 based counter electrode (PCE 2.1 %, FF 34 %). Additionally, a spin coating technique enhances the performance of the n-Bi2Te3-SWCNT/p-Si photodetector, yielding a responsivity of 2.2 AW-1, detectivity of 1.2 × 10-3 and enhanced external quantum efficiency. These findings demonstrate that the newly developed Bi2Te3-SWCNT heterostructure enhances interfacial charge transport, electrocatalytic performance in DSSCs, and overall photodetector performance.

Photoinduced charge separation at heterojunctions between two-dimensional layered materials and small organic molecules

p-n heterojunctions are fundamental components for electronics and optoelectronics, including diodes, transistors, sensors, and solar cells. Over the past few decades, organic-inorganic p-n heterojunctions have garnered significant interest due to the diverse properties they exhibit, which are a result of the limitless combinations of organic molecules and inorganic materials. This review article concentrates on photoinduced charge separation and photocurrent generation at heterojunctions between two-dimensional layered materials and structurally well-defined organic small molecules. We highlight representative examples, including our work, and critically discuss their potential and perspectives.

Visible-Light-Stimulated Optoelectronic Neuromorphic Transistor Based on Indium-Gallium-Zinc Oxide via Bi2Te3 Light Absorption Layer

To emulate a visual perception system, a bismuth telluride (Bi2Te3)/indium-gallium-zinc oxide (IGZO) heterostructure is introduced for optoelectronic neuromorphic transistors (ONTs). Amorphous IGZO is applied as a channel layer to exhibit low off-current, high mobility, and persistent photoconductivity, enabling light-stimulated neuromorphic characteristics. The atomic ratio of In/Ga/Zn was 9.4:9.8:5.2. For a light absorption layer, Bi2Te3 is applied due to a small bandgap, high photoresponse, and carrier concentration. However, conventional optoelectronic devices using Bi2Te3 exhibit insufficient performance owing to their excessive conductivity. To resolve the constraint, the oxidation of Bi2Te3 is performed to suppress its electrical conductivity. Finally, the IGZO ONT with a Bi2Te3 layer exhibits optoelectronic characteristics under visible-light irradiation. Under red-light irradiation having a light intensity of 5 mW mm-2, it exhibits enhanced optoelectronic characteristics including photoresponsivity, photosensitivity, and detectivity from 19.6 to 3.46 × 102 A/W, 4.95 to 1.46 × 108, and 1.45 × 107 to 2.13 × 1012 Jones compared to that without a Bi2Te3 layer, respectively. To confirm reproducibility and uniformity, we fabricated and compared the optoelectronic characteristics of 5 samples from batch to batch. Regarding optoelectronic neuromorphic characteristics, the ONT exhibits short- and long-term memory and a highly linear relationship between peak synaptic current and pulse number under red-light pulses. The paired-pulse facilitation index was 208%. To confirm the applicability of artificial visual perception, a 6 × 6 ONT array demonstrates long-term memory characteristic successfully after red-light irradiation with a Y-shaped pattern. In view of stability and reliability, we conducted three potentiation processes and compared the peak synaptic currents of each potentiation process.

Enhanced Photocharacteristics by Fermi Level Modulating in Sb2 Te3 /Bi2 Se3 Topological Insulator p-n Junction

Topological insulators have recently received attention in optoelectronic devices because of their high mobility and broadband absorption resulting from their topological surface states. In particular, theoretical and experimental studies have emerged that can improve the spin generation efficiency in a topological insulator-based p-n junction structure called a TPNJ, drawing attention in optospintronics. Recently, research on implementing the TPNJ structure is conducted; however, studies on the device characteristics of the TPNJ structure are still insufficient. In this study, the TPNJ structure is effectively implemented without intermixing by controlling the annealing temperature, and the photocharacteristics appearing in the TPNJ structure are investigated using a cross-pattern that can compare the characteristics in a single device. Enhanced photo characteristics are observed for the TPNJ structure. An optical pump Terahertz probe and a physical property measurement system are used to confirm the cause of improved photoresponsivity. Consequently, the photocharacteristics are improved owing to the change in the absorption mechanism and surface transport channel caused by the Fermi level shift in the TPNJ structure.

Ultrafast and Sensitive Self-Powered Photodetector Based on Graphene/Pentacene Single Crystal Heterostructure with Weak Light Detection Capacity

Organic materials exhibit efficient light absorption and low-temperature, large-scale processability, and have stimulated enormous research efforts for next-generation optoelectronics. While, high-performance organic devices with fast speed and high responsivity still face intractable challenges, due to their intrinsic limitations including finite carrier mobility and high exciton binding energy. Here an ultrafast and highly sensitive broadband phototransistor is demonstrated by integrating high-quality pentacene single crystal with monolayer graphene. Encouragingly, the -3 dB bandwidth can reach up to 26 kHz, which is a record-speed for such sensitized organic phototransistors. Enormous absorption, long exciton diffusion length of pentacene crystal, and efficient interfacial charge transfer enable a high responsivity of >105  A W-1  and specific detectivity of >1011  Jones. Moreover, self-powered weak-light detection is realized using a simple asymmetric configuration, and the obvious zero-bias photoresponses can be displayed even under 750 nW cm-2  light intensity. Excellent response speed and photoresponsivity enable high-speed image sensor capability in UV-Vis ranges.  The results offer a practical strategy for constructing high-performance self-powered organic hybrid photodetectors, with strong applicability in wireless, weak-light detection, and video-frame-rate imaging applications.

Two-Dimensional Van Der Waals Topological Materials: Preparation, Properties, and Device Applications

Over the past decade, 2D van der Waals (vdW) topological materials (TMs), including topological insulators and topological semimetals, which combine atomically flat 2D layers and topologically nontrivial band structures, have attracted increasing attention in condensed-matter physics and materials science. These easily cleavable and integrated TMs provide the ideal platform for exploring topological physics in the 2D limit, where new physical phenomena may emerge, and represent a potential to control and investigate exotic properties and device applications in nanoscale topological phases. However, multifaced efforts are still necessary, which is the prerequisite for the practical application of 2D vdW TMs. Herein, this review focuses on the preparation, properties, and device applications of 2D vdW TMs. First, three common preparation strategies for 2D vdW TMs are summarized, including single crystal exfoliation, chemical vapor deposition, and molecular beam epitaxy. Second, the origin and regulation of various properties of 2D vdW TMs are introduced, involving electronic properties, transport properties, optoelectronic properties, thermoelectricity, ferroelectricity, and magnetism. Third, some device applications of 2D vdW TMs are presented, including field-effect transistors, memories, spintronic devices, and photodetectors. Finally, some significant challenges and opportunities for the practical application of 2D vdW TMs in 2D topological electronics are briefly addressed.

Advances in Flexible Organic Photodetectors: Materials and Applications

Future electronics will need to be mechanically flexible and stretchable in order to enable the development of lightweight and conformal applications. In contrast, photodetectors, an integral component of electronic devices, remain rigid, which prevents their integration into everyday life applications. In recent years, significant efforts have been made to overcome the limitations of conventional rigid photodetectors, particularly their low mechanical deformability. One of the most promising routes toward facilitating the fabrication of flexible photodetectors is to replace conventional optoelectronic materials with nanomaterials or organic materials that are intrinsically flexible. Compared with other functional materials, organic polymers and molecules have attracted more attention for photodetection applications due to their excellent photodetection performance, cost-effective solution-fabrication capability, flexible design, and adaptable manufacturing processes. This article comprehensively discusses recent advances in flexible organic photodetectors in terms of optoelectronic, mechanical properties, and hybridization with other material classes. Furthermore, flexible organic photodetector applications in health-monitoring sensors, X-ray detection, and imager devices have been surveyed.

Direct Observation of the Epitaxial Growth of Bismuth Telluride Topological Insulators from One-Dimensional Heterostructured Nanowires

As extraordinary topological insulators, 2D bismuth telluride (Bi₂Te₃) nanosheets have been synthesized and controlled with a few-layer structure by a facile and fast solvothermal process. The detail-oriented growth evolution of 2D Bi₂Te₃ in an ethylene glycol reducing solution is discovered and recorded for direct observation of the liquid–solid interactions through the use of environmental SEM. At the initial synthesis stage, Te nanowires are rapidly synthesized and observed in solution. In the next stage, Bi nanoclusters slowly adhere to the Te nanowires and react to form hierarchical Te-Bi₂Te₃ nanostructured materials. Additionally, the Te nanowires shorten in-plane in an orderly manner, while the Bi₂Te₃ nanosheets exhibit directional out-of-plane epitaxial growth. In the last procedure, Bi₂Te₃ nanosheets with a clear hexagonal appearance can be largely obtained. Experiments performed under these rigorous conditions require careful consideration of the temperature, time, and alkaline environment for each reaction process. In addition, the yield of a wider and thinner Bi₂Te₃ nanosheet is synthesized by manipulating the crystal growth with an optimal alkaline concentration, which is found through statistical analysis of the AFM results. In the UV–Vis–NIR spectroscopy results, the main peak in the spectrum tends to redshift, while the other peak in the ultraviolet range decreases during Bi₂Te₃ nanosheet synthesis, facilitating a rapid understanding of the trends in the morphological evolution of the Bi₂Te₃ materials in solution. By rationalizing the above observations, we are the first to report the success of environmental SEM, HAADF-STEM, and UV–Vis–NIR spectroscopy for confirming the Bi₂Te₃ nanosheet formation mechanism and the physical properties in the solvent media. This research promotes the future optimization of promising Bi₂Te₃ nanomaterials that can be used in the fabrication of thermoelectric and topological components.

High-Performance Mid-IR to Deep-UV van der Waals Photodetectors Capable of Local Spectroscopy at Room Temperature

The ability to perform broadband optical spectroscopy with subdiffraction-limit resolution is highly sought-after for a wide range of critical applications. However, sophisticated near-field techniques are currently required to achieve this goal. We bypass this challenge by demonstrating an extremely broadband photodetector based on a two-dimensional (2D) van der Waals heterostructure that is sensitive to light across over a decade in energy from the mid-infrared (MIR) to deep-ultraviolet (DUV) at room temperature. The devices feature high detectivity (>10⁹ cm Hz^1/2 W^-1) together with high bandwidth (2.1 MHz). The active area can be further miniaturized to submicron dimensions, far below the diffraction limit for the longest detectable wavelength of 4.1 μm, enabling such devices for facile measurements of local optical properties on atomic-layer-thickness samples placed in close proximity. This work can lead to the development of low-cost and high-throughput photosensors for hyperspectral imaging at the nanoscale.

Self-powered topological insulator Bi2Te3/Ge heterojunction photodetector driven by long-lived excitons transfer

Due to the wide spectral absorption and ultrafast electron dynamical response under optical excitation, topological insulator (TI) was proposed to have appealing application in next-generation photonic and optoelectronic devices. Whereas, the bandgap-free speciality of Dirac surface states usually leads to a quick relaxation of photoexcited carriers, making the transient excitons difficult to manipulate in isolated TIs. Growth of TI Bi₂Te₃/Ge heterostructures can promote the specific lifetime and quantity of long-lived excitons, offering the possibility of designing original near-infrared optoelectronic devices, however, the construction of TI Bi₂Te₃/Ge heterostructures has yet to be investigated. Herein, the high-quality Bi₂Te₃/Ge heterojunction with clear interface was prepared by physical vapor deposition strategy. A significant photoluminescence quenching behaviour was observed by experiments, which was attributed to the spontaneous excitation transfer of electrons at heterointerface via theoretical analysis. Then, a self-powered heterostructure photodetector was fabricated, which demonstrated a maximal detectivity of 1.3 × 10¹¹Jones, an optical responsivity of 0.97 A W^-1, and ultrafast photoresponse speed (12.1μs) under 1064 nm light illumination. This study offers a fundamental understanding of the spontaneous interfacial exciton transfer of TI-based heterostructures, and the as-fabricated photodetectors with excellent performance provided an important step to meet the increasing demand for novel optoelectronic applications in the future.

Epitaxial Topological Insulator Bi2Te3 for Fast Visible to Mid-Infrared Heterojunction Photodetector by Graphene As Charge Collection Medium

Three dimensional topological insulators have a thriving application prospect in broadband photodetectors due to the possessed topological quantum states. Herein, a large area and uniform topological insulator bismuth telluride (Bi₂Te₃) layer with high crystalline quality is directly epitaxial grown on GaAs(111)B wafer using a molecular beam epitaxy process, ensuring efficient out-of-plane carriers transportation due to reduced interface defects influence. By tiling monolayer graphene (Gr) on the as-prepared Bi₂Te₃ layer, a Gr/Bi₂Te₃/GaAs heterojunction array prototype was further fabricated, and our photodetector array exhibited the capability of sensing ultrabroad photodetection wavebands from visible (405 nm) to mid-infrared (4.5 μm) with a high specific detectivity (D*) up to 10¹² Jones and a fast response speed at about microseconds at room temperature. The enhanced device performance can be attributed to enhanced light-matter interaction at the high-quality heterointerface of Bi₂Te₃/GaAs and improved carrier collection efficiency through graphene as a charge collection medium, indicating an application prospect of topological insulator Bi₂Te₃ for fast-speed broadband photodetection up to a mid-infrared waveband. This work demonstrated the potential of integrated topological quantum materials with a conventional functional substrate to fabricate the next generation of broadband photodetection devices for uncooled focal plane array or infrared communication systems in future.

Two-Dimensional Bis(dithiolene)iron(II) Self-Powered UV Photodetectors with Ultrahigh Air Stability

Organometallic two-dimensional (2D) nanosheets with tailorable components have recently fascinated the optoelectronic communities due to their solution-processable nature. However, the poor stability of organic molecules may hinder their practical application in photovoltaic devices. Instead of conventional organometallic 2D nanosheets with low weatherability, an air-stable π-conjugated 2D bis(dithiolene)iron(II) (FeBHT) coordination nanosheet (CONASH) is synthesized via bottom-up liquid/liquid interfacial polymerization using benzenehexathiol (BHT) and iron(II) ammonium sulfate [Fe(NH4)2(SO4)2] as precursors. The uncoordinated thiol groups in FeBHT are easily oxidized, but the Fe(NH4)2(SO4)2 dissociation rate is slow, which facilitates the protection of sulfur groups by iron(II) ions. The density functional theory calculates that the resultant FeBHT network gains the oxygen-repelling function for oxidation suppression. In air, the FeBHT CONASH exhibits self-powered photoresponses with short response times (<40 ms) and a spectral responsivity of 6.57 mA W-1, a specific detectivity of 3.13 × 1011 Jones and an external quantum efficiency of 2.23% under 365 nm illumination. Interestingly, the FeBHT self-powered photodetector reveals extremely high long-term air stability, maintaining over 94% of its initial photocurrent after aging for 60 days without encapsulation. These results open the prospect of using organometallic 2D materials in commercialized optoelectronic fields.

Progress in Epitaxial Thin-Film Na3 Bi as a Topological Electronic Material

Trisodium bismuthide (Na₃ Bi) is the first experimentally verified topological Dirac semimetal, and is a 3D analogue of graphene hosting relativistic Dirac fermions. Its unconventional momentum-energy relationship is interesting from a fundamental perspective, yielding exciting physical properties such as chiral charge carriers, the chiral anomaly, and weak anti-localization. It also shows promise for realizing topological electronic devices such as topological transistors. Herein, an overview of the substantial progress achieved in the last few years on Na₃ Bi is presented, with a focus on technologically relevant large-area thin films synthesized via molecular beam epitaxy. Key theoretical aspects underpinning the unique electronic properties of Na₃ Bi are introduced. Next, the growth process on different substrates is reviewed. Spectroscopic and microscopic features are illustrated, and an analysis of semiclassical and quantum transport phenomena in different doping regimes is provided. The emergent properties arising from confinement in two dimensions, including thickness-dependent and electric-field-driven topological phase transitions, are addressed, with an outlook toward current challenges and expected future progress.

High performing flexible optoelectronic devices using thin films of topological insulator

Topological insulators (TIs) possess exciting nonlinear optical properties due to presence of metallic surface states with the Dirac fermions and are predicted as a promising material for broadspectral phodotection ranging from UV (ultraviolet) to deep IR (infrared) or terahertz range. The recent experimental reports demonstrating nonlinear optical properties are mostly carried out on non-flexible substrates and there is a huge demand for the fabrication of high performing flexible optoelectronic devices using new exotic materials due to their potential applications in wearable devices, communications, sensors, imaging etc. Here first time we integrate the thin films of TIs (Bi₂Te₃) with the flexible PET (polyethylene terephthalate) substrate and report the strong light absorption properties in these devices. Owing to small band gap material, evolving bulk and gapless surface state conduction, we observe high responsivity and detectivity at NIR (near infrared) wavelengths (39 A/W, 6.1 × 10⁸ Jones for 1064 nm and 58 A/W, 6.1 × 10⁸ Jones for 1550 nm). TIs based flexible devices show that photocurrent is linearly dependent on the incident laser power and applied bias voltage. Devices also show very fast response and decay times. Thus we believe that the superior optoelectronic properties reported here pave the way for making TIs based flexible optoelectronic devices.

Suppression of Persistent Photoconductivity of Rubrene Crystals using Gate-Tunable Rubrene/Bi2 Se3 Diodes with Photoinduced Negative Differential Resistance

Organic single-crystalline semiconductors show great potential in high-performance photodetectors. However, they suffer from persistent photoconductivity (PPC) due to the charge trapping, which has severely hindered high-speed imaging applications. Here, a universal strategy of solving the PPC by integrating with topological insulator Bi₂ Se₃ is provided. The rubrene/Bi₂ Se₃ heterojunctions are selected as an example for general demonstration due to the reproducibly high mobility and broad optoelectronic applications of rubrene crystals. By virtue of high carrier concentration on Bi₂ Se₃ surface and the strong built-in electrical field, the photoresponse of the heterotransistor is significantly reduced for more than two orders (from over 10 s to 54 ms), meanwhile the photoresponsivity can reach 124 A W^-1 . To the best of knowledge, this operating speed is among the fastest responses in organic-inorganic heterojunctions. The heterotransistor also shows unique negative differential resistance under positive gate bias, which can be explained by photoinduced de-trapping of electron trap states in the bulk rubrene crystals. Besides, the rubrene/Bi₂ Se₃ heterojunction behaves as a gate-tunable backward-like diode due to the inhomogenous carrier distribution in the thick rubrene crystal and inversion of relative Fermi level positions. The findings demonstrate versatile functionalities of the rubrene/Bi₂ Se₃ heterojunctions for various emerging optoelectronic applications.

High performance broadband photodetectors based on Sb2Te3/n-Si heterostructure

With the rapid development of optoelectronic devices, photodetectors have triggered unprecedented promise in the field of optical communication, environmental monitoring, biological imaging, chemical sensing. At the same time, there is a higher requirement for photodetectors. It is still a huge challenge for photodetectors that possess excellent performance, low cost and broad range photoresponse from ultraviolet to infrared. In this work, a facile, low cost growth of Sb₂Te₃ thin film using magnetic sputtering was performed. After rapid annealing treatment, the crystallinity of the thin film was transformed from amorphous to polycrystalline. Ultraviolet-visible-infrared absorption study of the thin film revealed broad absorption range, which is ideal for use in broadband photodetectors. Such photodetectors can find many important applications in communication, data security, environmental monitoring and defense technology etc. A prototype photodetector, consisting of Sb₂Te₃/n-Si heterostructure, was produced and characterized. The device demonstrated a significant photoelectric response at a broad spectral range of between 250 and 2400 nm. The maximum responsivity and detectivity of the device were 270 A W^-1 and 1.28 × 10¹³ Jones, respectively, under 2400 nm illumination. Therefore, the results showed the potential use of Sb₂Te₃ thin film in developing high performance broadband photodetectors.

One-pot synthesized Bi2Te3/graphene for a self-powered photoelectrochemical-type photodetector

Bismuth telluride (Bi₂Te₃) is a typical topological insulator, which possesses a narrow band gap and exhibits fascinating performance in the photodetector field. In this work, we fabricated a Bi₂Te₃/graphene heterostructure via a facile one-pot hydrothermal method. The as-prepared composites were used as the electrode materials for the photoelectrochemical (PEC)-type photodetector. From the results of PEC tests, we obviously found that the Bi₂Te₃/graphene heterostructure offers a remarkable improvement in photoresponse compared to that of sole Bi₂Te₃, and effectively demonstrates effective photocarrier generation and transfer at the interface between the graphene and Bi₂Te₃, which can enhance the properties of the photoresponse. Moreover, owing to the self-powered ability of the PEC-type photodetector, it can work under the bias potential of 0 V and exhibits a prominent photoresponse which can reach 2.2 mA W^-1. Also, the photocurrent density of the prepared Bi₂Te₃/graphene heterostructure-based photodetector can almost linearly rise with the increased irradiation power density. Even if the light intensity was reduced to 40 mW cm^-2, the photocurrent density could also reach 67 μA cm^-2, which ensures the photodetection ability of the as-prepared Bi₂Te₃/graphene under low light intensity. The excellent performance of a Bi₂Te₃/graphene heterostructure for a PEC-type photodetector holds great promise in the field of photoelectric detection.

High Responsivity and External Quantum Efficiency Photodetectors Based on Solution-Processed Ni-Doped CuO Films

Photodetectors based on p-type metal oxides are still a challenge for optoelectronic device applications. Many effects have been paid to improve their performance and expand their detection range. Here, high-quality Cu_1-xNi_xO (x = 0, 0.2, and 0.4) film photodetectors were prepared by a solution process. The crystal quality, morphology, and grain size of Cu_1-xNi_xO films can be modulated by Ni doping. Among the photodetectors, the Cu_0.8Ni_0.2O photodetector shows the maximum photocurrent value (6 × 10^-7 A) under a 635 nm laser illumination. High responsivity (26.46 A/W) and external quantum efficiency (5176%) are also achieved for the Cu_0.8Ni_0.2O photodetector. This is because the Cu_0.8Ni_0.2O photosensitive layer exhibits high photoconductivity, low surface states, and high crystallization after 20% Ni doping. Compared to the other photodetectors, the Cu_0.8Ni_0.2O photodetector exhibits the optimal response in the near-infrared region, owing to the high absorption coefficient. These findings provide a route to fabricate high-performance and wide-detection range p-type metal oxide photodetectors.

Lateral Photodetectors Based on Double-Cable Polymer/Two-Dimensional Perovskite Heterojunction

Double-cable conjugated polymers and two-dimensional (2D) perovskites are both promising materials for next-generation photodetectors (PDs) due to their solution processibility and tunable optoelectronic properties. In this work, a lateral PD is designed by layering a double-cable conjugated polymer film atop a 2D Ruddlesden-Popper perovskite film. Compared to the corresponding single-layer polymer and perovskite PDs, the heterojunction device exhibits greatly improved performance with a high responsivity of 27.06 A W^-1, an on/off ratio of 1379, and a short rise/decay time of 3.53/3.78 ms. In addition, a flexible device using polyimide as the substrate is successfully fabricated and exhibits comparable performance with the device on glass. This work demonstrates the great potential of double-cable polymer/2D perovskite heterojunctions in future flexible optoelectronics.

Recent advances in solution-processed photodetectors based on inorganic and hybrid photo-active materials

Due to their excellent and tailorable optoelectronic performance, low cost, facile fabrication, and compatibility with flexible substrates, solution-processed inorganic and hybrid photo-active materials have attracted extensive interest for next-generation photodetector applications. This review gives a comprehensive compilation of solution-processed photodetectors. The basic structures of the device and important parameters of photodetectors will be firstly summarized. Then the development of various solution processing technologies containing solution synthesis and liquid phase film-forming processes for the preparation of semiconductor films is described. From the materials science point of view, we give a comprehensive overview about the current status of solution processed semiconductor materials including inorganic and hybrid photo-active materials for the application of photodetectors. Moreover, challenges and future trends in the field of solution-processed photodetectors are proposed.

Enhancement of Charge Transport in Polythiophene Semiconducting Polymer by Blending with Graphene Nanoparticles

This paper describes a study on the charge transport in a composite of liquid-exfoliated graphene nanoparticles (GNPs) and a polythiophene semiconducting polymer. While the former component is highly conducting, although it consists of isolated nanostructures, the latter offers an efficient charge transport path between the individual GNPs within the film, overall yielding enhanced charge transport properties of the resulting bi-component system. The electrical characteristics of the composite layers were investigated by means of measurements of time-of-flight photoconductivity and transconductance in field-effect transistors. In order to analyze both phenomena separately, charge density and charge mobility contributions to the conductivity were singled out. With the increasing GNP concentration, the charge mobility was found to increase, thereby reducing the time spent by the carriers on the polymer chains. In addition, for GNP loading above 0.2 % (wt.), an increase of free charge density was observed that highlights an additional key role played by doping. Variable-range hopping model of a mixed two- and three-dimensional transport is explained using temperature dependence of mobility and free charge density. The temperature variation of free charge density was related to the electron transfer from polythiophene to GNP, with an energy barrier of 24 meV.

2D material broadband photodetectors

Our review provides a comprehensive overview of the latest evolution of broadband photodetectors (BBPDs) based on 2D materials (2DMs). We begin with BBPDs built on various 2DM channels, including narrow-bandgap 2DMs, 2D topological semimetals, 2D charge density wave compounds, and 2D heterojunctions. Then, we introduce defect-engineered 2DM BBPDs, including vacancy engineering, heteroatom incorporation, and interfacial engineering. Subsequently, we summarize 2DM based mixed-dimensional (0D-2D, 1D-2D, 2D-3D, and 0D-2D-3D) BBPDs. Finally, we provide several viewpoints for the future development of this burgeoning field.

THz photodetector using sideband-modulated transport through surface states of a 3D topological insulator

The transport properties of the surface charge carriers of a three dimensional topological insulator under a terahertz (THz) field along with a resonant double barrier structure is theoretically analyzed within the framework of Floquet theory to explore the possibility of using such a device for photodetection purposes. We show that due to the contribution of elastic and inelastic scattering processes in the resulting transmission, side-bands are formed in the conductance spectrum. This side band formation is similar to the side-bands formation in cavity transmission spectra in an optical cavity and this information can be used to detect the frequency of unknown THz radiation. The dependence of the conductance on the bias voltage, the effect of THz radiation on resonances and the influence of zero energy points on the transmission spectrum are also discussed.

Self-Powered Broad-band Photodetectors Based on Vertically Stacked WSe2/Bi2Te3 p-n Heterojunctions

Semiconducting p-n heterojunctions, serving as the basic unit of modern electronic devices, such as photodetectors, solar-energy conversion devices, and light-emitting diodes (LEDs), have been extensively investigated in recent years. In this work, high performance self-powered broad-band photodetectors were fabricated based on vertically stacked p-n heterojunctions though combining p-type WSe₂ with n-type Bi₂Te₃ via van der Waals (vdW) epitaxial growth. Devices based on the p-n heterojunction show obvious current rectification behaviors in the dark and superior photovoltaic characteristics under light irradiation. A maximum short circuit current of 18 nA and open circuit voltage of 0.25 V can be achieved with the illumination light of 633 nm (power density: 26.4 mW/cm²), which are among the highest values compared with the ever reported 2D vdW heterojunctions synthesized by chemical vapor deposition (CVD) method. Benefiting from the broad-band absorption of the heterostructures, the detection range can be expanded from the visible to near-infrared (375-1550 nm). Moreover, ascribing to the efficient carriers separation process at the junction interfaces, the devices can be further employed as self-powered photodetectors, where a fast response time (∼210 μs) and high responsivity (20.5 A/W at 633 nm and 27 mA/W at 1550 nm) are obtained under zero bias voltage. The WSe₂/Bi₂Te₃ p-n heterojunction-based self-powered photodetectors with high photoresponsivity, fast photoresponse time, and broad spectral response will find potential applications in high speed and self-sufficient broad-band devices.

Polarimetric Three-Dimensional Topological Insulators/Organics Thin Film Heterojunction Photodetectors

As a state of quantum matter with insulating bulk and gapless surface states, topological insulators (TIs) have huge potential in optoelectronic devices. On the other hand, polarization resolution photoelectric devices based on anisotropic materials have overwhelming advantages in practical applications. In this work, the 3D TIs Bi₂Te₃/organics thin film heterojunction polarimetric photodetectors with high anisotropic mobility ratio, fast response time, high responsivity, and EQE in broadband spectra are presented. At first, the maximum anisotropic mobility ratio of the Bi₂Te₃/organics thin film can reach 2.56, which proves that Bi₂Te₃ can serve as a sensitive material for manufacturing polarization photoelectric devices. Moreover, it is found that the device can exhibit a broad bandwidth and ultrahigh response photocurrent from visible to middle wave infrared spectra (405-3500 nm). The highest responsivity (R_i) of optimized devices can reach up to 23.54 AW^-1; surprisingly, the R_i of the device can still reach 1.93 AW^-1 at 3500 nm. In addition, the ultrahigh external quantum efficiency is 4534% with a fast response time (1.42 ms). Excellent properties mentioned above indicate that TIs/organics heterojunction devices are suitable for manufacturing high-performance photoelectric devices in infrared region.

A Bilayer 2D-WS2/Organic-Based Heterojunction for High-Performance Photodetectors

Two-dimensional (2D) tungsten disulfide (WS2) has inspired great efforts in optoelectronics, such as in solar cells, light-emitting diodes, and photodetectors. However, chemical vapor deposition (CVD) grown 2D WS2 domains with the coexistence of a discontinuous single layer and multilayers are still not suitable for the fabrication of photodetectors on a large scale. An emerging field in the integration of organic materials with 2D materials offers the advantages of molecular diversity and flexibility to provide an exciting aspect on high-performance device applications. Herein, we fabricated a photodetector based on a 2D-WS2/organic semiconductor materials (mixture of the (Poly-(N, N'-bis-4-butylphenyl-N, N'-bisphenyl) benzidine and Phenyl-C61-butyric acid methyl ester (Poly-TPD/PCBM)) heterojunction. The application of Poly-TPD/PCBM organic blend film enhanced light absorption, electrically connected the isolated WS2 domains, and promoted the separation of electron-hole pairs. The generated exciton could sufficiently diffuse to the interface of the WS2 and the organic blend layers for efficient charge separation, where Poly-TPD was favorable for hole carrier transport and PCBM for electron transport to their respective electrodes. We show that the photodetector exhibited high responsivity, detectivity, and an on/off ratio of 0.1 A/W, 1.1 × 1011 Jones, and 100, respectively. In addition, the photodetector showed a broad spectral response from 500 nm to 750 nm, with a peak external quantum efficiency (EQE) of 8%. Our work offers a facile solution-coating process combined with a CVD technique to prepare an inorganic/organic heterojunction photodetector with high performance on silicon substrate.

Ultraviolet to Long-Wave Infrared Photodetectors Based on a Three-Dimensional Dirac Semimetal/Organic Thin Film Heterojunction

In this work, high-performance ultraviolet to long-wave infrared (UV-LIR) devices based on an N-type three-dimensional (3D) Dirac semimetal Cd₃As₂ and P-type organic (small molecules and polymers) heterojunction are prepared. Primarily, the photodetector shows a broadband photoresponse from 365 to 10600 nm. The optimized device responsivity is 729 mA/W, along with a fast response time of 282 μs and a high on-off ratio of 6268, which are 2 orders of magnitude higher than those previously reported for a 3D Dirac semimetal-based device. In the LIR region (10600 nm), the responsivity and on-off ratio can reach 81.3 mA/W and 100, respectively. In addition, the time-resolved femtosecond pump detection technology is used to reveal the relaxation time of Cd₃As₂/organic thin films (4.30 ps), indicating that Cd₃As₂/organic thin films have great potential for the manufacture of fast IR devices. These results demonstrate that the 3D Dirac semimetal/organic thin film heterojunction photodetectors will be a feasible solution for high-speed and broadband photodetectors in large-array imaging.

Zero-Bias Visible to Near-Infrared Horizontal p-n-p TiO2 Nanotubes Doped Monolayer Graphene Photodetector

We present a p-n-p monolayer graphene photodetector doped with titanium dioxide nanotubes for detecting light from visible to near-infrared (405 to 1310 nm) region. The built-in electric field separates the photo-induced electrons and holes to generate photocurrent without bias voltage, which allows the device to have meager power consumption. Moreover, the detector is very sensitive to the illumination area, and we analyze the reason using the energy band theory. The response time of the detector is about 30 ms. The horizontal p-n-p device is a suitable candidate in zero-bias optoelectronic applications.

Infrared Photodetector Based on the Photothermionic Effect of Graphene-Nanowall/Silicon Heterojunction

Because of the slow relaxation process according to weak acoustic phonon interaction, the photothermionic effect in graphene could be much more obvious than in the metal film, so a graphene heterojunction photodetector based on the photothermionic effect is promising for infrared imaging applications. However, the 2.3% absorption rate of the graphene film presents a severe limitation. Here, in situ grown graphene nanowalls (GNWs) were integrated on the silicon substrate interfaced with Au nanoparticles. Because of the strong infrared absorption and hot-carrier relaxation process in GNWs, the as-prepared GNWs/Au/silicon heterojunction has a photo to dark ratio of 2 × 10⁴, responsivity of 138 mA/W, and linear dynamic range of 89.7 dB, with a specific detectivity of 1.4 × 10¹⁰ and 1.6 × 10⁹ cm Hz^1/2/W based on calculated and measured noise, respectively, in 1550 nm at room temperature, and has the best performance among silicon-compatible infrared photodetectors without any complicated waveguide structures. Obvious photoresponses are also detected in the mid-infrared and terahertz band. The interface Au particle is found to reduce the barrier height and enhance absorption. The device structure in this report could be compatible with the semiconductor process, so that infrared photodetectors with high integration density and low cost could be potentially realized.

Synergistic additive-mediated CVD growth and chemical modification of 2D materials

This review summarizes significant advances in the use of typical synergistic additives in growth of 2D materials with chemical vapor deposition, and the corresponding performance improvement of field effect transistors and photodetectors.