2-(2-Methoxyphenyl)-1,3-dimethyl-1H-benzoimidazol-3-ium iodide as a new air-stable n-type dopant for vacuum-processed organic semiconductor thin films

Photocatalytic doping of organic semiconductors

Chemical doping is an important approach to manipulating charge-carrier concentration and transport in organic semiconductors (OSCs)1-3 and ultimately enhances device performance4-7. However, conventional doping strategies often rely on the use of highly reactive (strong) dopants8-10, which are consumed during the doping process. Achieving efficient doping with weak and/or widely accessible dopants under mild conditions remains a considerable challenge. Here, we report a previously undescribed concept for the photocatalytic doping of OSCs that uses air as a weak oxidant (p-dopant) and operates at room temperature. This is a general approach that can be applied to various OSCs and photocatalysts, yielding electrical conductivities that exceed 3,000 S cm-1. We also demonstrate the successful photocatalytic reduction (n-doping) and simultaneous p-doping and n-doping of OSCs in which the organic salt used to maintain charge neutrality is the only chemical consumed. Our photocatalytic doping method offers great potential for advancing OSC doping and developing next-generation organic electronic devices.

A Novel N-Type Molecular Dopant With a Closed-Shell Electronic Structure Applicable to the Vacuum-Deposition Process

Rational design, synthesis, and characterization of a new efficient versatile n-type dopant with a closed-shell electronic structure are described. By employing the tetraphenyl-dipyranylidene (DP0) framework with two 7π-electron systems modified with N,N-dimethylamino groups as the strong electron-donating substituent, 2,2',6,6'-tetrakis[4-(dimethylamino)phenyl]-4,4'-dipyranylidene (DP7), a closed-shell molecule with an extremely high-lying energy level of the highest occupied molecular orbital, close to 4.0 eV below the vacuum level, is successfully developed. Thanks to its thermal stability, DP7 is applicable to vacuum deposition, which allows utilization of DP7 in bulk doping for the development of n-type organic thermoelectric materials and contact doping for reducing contact resistance in n-type organic field-effect transistors. As vacuum-deposition processable n-type dopants are very limited, DP7 stands out as a useful n-type dopant, particularly for the latter purpose.

Molecular Doping Modulation and Applications of Structure-Sorted Single-Walled Carbon Nanotubes: A Review

Single-walled carbon nanotubes (SWCNTs) that have a reproducible distribution of chiralities or single chirality are among the most competitive materials for realizing post-silicon electronics. Molecular doping, with its non-destructive and fine-tunable characteristics, is emerging as the primary doping approach for the structure-controlled SWCNTs, enabling their eventual use in various functional devices. This review provides an overview of important advances in the area of molecular doping of structure-controlled SWCNTs and their applications. The first part introduces the underlying physical process of molecular doping, followed by a comprehensive survey of the commonly used dopants for SWCNTs to date. Then, it highlights how the convergence of molecular doping and structure-sorting strategies leads to significantly improved functionality of SWCNT-based field-effect transistor arrays, transparent electrodes in optoelectronics, thermoelectrics, and many emerging devices. At last, several challenges and opportunities in this field are discussed, with the hope of shedding light on promoting the practical application of SWCNTs in future electronics.

Efficient and air-stable n-type doping in organic semiconductors

Chemical doping of organic semiconductors (OSCs) enables feasible tuning of carrier concentration, charge mobility, and energy levels, which is critical for the applications of OSCs in organic electronic devices. However, in comparison with p-type doping, n-type doping has lagged far behind. The achievement of efficient and air-stable n-type doping in OSCs would help to significantly improve electron transport and device performance, and endow new functionalities, which are, therefore, gaining increasing attention currently. In this review, the issue of doping efficiency and doping air stability in n-type doped OSCs was carefully addressed. We first clarified the main factors that influenced chemical doping efficiency in n-type OSCs and then explain the origin of instability in n-type doped films under ambient conditions. Doping microstructure, charge transfer, and dissociation efficiency were found to determine the overall doping efficiency, which could be precisely tuned by molecular design and post treatments. To further enhance the air stability of n-doped OSCs, design strategies such as tuning the lowest unoccupied molecular orbital (LUMO) energy level, charge delocalization, intermolecular stacking, in situ n-doping, and self-encapsulations are discussed. Moreover, the applications of n-type doping in advanced organic electronics, such as solar cells, light-emitting diodes, field-effect transistors, and thermoelectrics are being introduced. Finally, an outlook is provided on novel doping ways and material systems that are aimed at stable and efficient n-type doped OSCs.

First-principles screening of surface-charge-transfer molecular dopants for n-type diamond

Surface charge transfer doping (SCTD) is an alternative approach to achieving n-type doped diamonds since the n-type bulk doping of diamonds remains a challenge, but so far efficient diamond n-type SCTD has not been achieved. Here we provide a comprehensive study of the n-type SCTD of the diamond by using first-principles calculations based on the density functional theory. Taking the principle that ionization potentials of the dopants must be higher than those of the diamond, we screened a series of molecules that may be suitable for diamond n-type SCTD doping. Methyl viologen and benzyl viologen provide the largest amount of transfer electron among the common n-type SCTD dopants for the oxygen and fluorine terminated (100) surface diamond, with the electron areal densities of2.60×1013cm-2and9.20×1012cm-2,respectively. It is indicated that the transferred electron amount is positively correlated with the difference between the ionization potentials of the dopants and the electron affinity of the diamond, while the density of dopants also has a positive impact with a decreasing trend. The present work provides a useful understanding of the physical mechanism for the n-type SCTD of diamonds, and benefits the development of n-type SCTD diamond materials.

A Nanocar and Rotor in One Molecule

Depending on its adsorption conformation on the Au(111) surface, a zwitterionic single-molecule machine works in two different ways under bias voltage pulses. It is a unidirectional rotor while anchored on the surface. It is a fast-drivable molecule vehicle (nanocar) while physisorbed. By tuning the surface coverage, the conformation of the molecule can be selected to be either rotor or nanocar. The inelastic tunneling excitation producing the movement is investigated in the same experimental conditions for both the unidirectional rotation of the rotor and the directed movement of the nanocar.

Molecular Doping Increases the Semitransparent Photovoltaic Performance of Dilute Bulk Heterojunction Film with Discontinuous Polymer Donor Networks

The semitransparent and colorful properties of organic solar cells (OSCs) attract intensive academic interests due to their potential application in building integrated photovoltaics, wearable electronics, and so forth. The most straightforward and effective method to tune these optical properties is varying the componential ratio in the blend film. However, the increase in device transmittance inevitably sacrifices the photovoltaic performance because of severe carrier recombination that originates from discontinuous charge-transport networks in the blend film. Herein, a strategy is proposed via the molecular-doping strategy to overcome these shortcomings. It is discovered that p-doping is able to release the trapped holes in segregated polymer domains leading to short-circuit current enhancement, while n-doping is more effective to fill the bandgap states producing a higher fill factor. More importantly, either type of doping improves the photovoltaic performance in the semitransparent photovoltaic devices. These discoveries provide a new pathway to breaking the compromise between the photovoltaic performance and optical transmittance in semitransparent OSCs, and hold promise for their future commercialization.

Organometallic and Organic Dimers: Moderately Air-Stable, Yet Highly Reducing, n-Dopants

ConspectusElectrical doping using redox-active molecules can increase the conductivity of organic semiconductors and lower charge-carrier injection and extraction barriers; it has application in devices such as organic and perovskite light-emitting diodes, organic and perovskite photovoltaic cells, field-effect transistors, and thermoelectric devices. Simple one-electron reductants that can act as n-dopants for a wide range of useful semiconductors must necessarily have low ionization energies and are, thus, highly sensitive toward ambient conditions, leading to challenges in their storage and handling. A number of approaches to this challenge have been developed, in which the highly reducing species is generated from a precursor or in which electron transfer is coupled in some way to a chemical reaction. Many of these approaches are relatively limited in applicability because of processing constraints, limited dopant strength, or the formation of side products.This Account discusses our work to develop relatively stable, yet highly reducing, n-dopants based on the dimers formed by some 19-electron organometallic complexes and by some organic radicals. These dimers are sufficiently inert that they can be briefly handled as solids in air but react with acceptors to release two electrons and to form two equivalents of stable monomeric cations, without formation of unwanted side products. We first discuss syntheses of such dimers, both previously reported and our own. We next turn to discuss their thermodynamic redox potentials, which depend on both the oxidation potential of the highly reducing odd-electron monomers and on the free energies of dissociation of the dimers; because trends in both these quantities depend on the monomer stability, they often more-or-less cancel, resulting in effective redox potentials for a number of the organometallic dimers that are approximately -2.0 V vs ferrocenium/ferrocene. However, variations in the dimer oxidation potential and the dissociation energies determine the mechanism through which a dimer reacts with a given acceptor in solution: in all cases dimer-to-acceptor electron transfer is followed by dimer cation cleavage and a subsequent second electron transfer from the neutral monomer to the acceptor, but examples with weak central bonds can also react through endergonic cleavage of the neutral dimer, followed by electron-transfer reactions between the resulting monomers and the acceptor. We, then, discuss the use of these dimers to dope a wide range of semiconductors through both vacuum and solution processing. In particular, we highlight the role of photoactivation in extending the reach of one of these dopants, enabling successful doping of a low-electron-affinity electron-transport material in an organic light-emitting diode. Finally, we suggest future directions for research using dimeric dopants.

Lactone Backbone Density in Rigid Electron-Deficient Semiconducting Polymers Enabling High n-type Organic Thermoelectric Performance

Three lactone-based rigid semiconducting polymers were designed to overcome major limitations in the development of n-type organic thermoelectrics, namely electrical conductivity and air stability. Experimental and theoretical investigations demonstrated that increasing the lactone group density by increasing the benzene content from 0 % benzene (P-0), to 50 % (P-50), and 75 % (P-75) resulted in progressively larger electron affinities (up to 4.37 eV), suggesting a more favorable doping process, when employing (N-DMBI) as the dopant. Larger polaron delocalization was also evident, due to the more planarized conformation, which is proposed to lead to a lower hopping energy barrier. As a consequence, the electrical conductivity increased by three orders of magnitude, to achieve values of up to 12 S cm and Power factors of 13.2 μWm^-1  K^-2 were thereby enabled. These findings present new insights into material design guidelines for the future development of air stable n-type organic thermoelectrics.

Doping Approaches for Organic Semiconductors

Electronic doping in organic materials has remained an elusive concept for several decades. It drew considerable attention in the early days in the quest for organic materials with high electrical conductivity, paving the way for the pioneering work on pristine organic semiconductors (OSCs) and their eventual use in a plethora of applications. Despite this early trend, however, recent strides in the field of organic electronics have been made hand in hand with the development and use of dopants to the point that are now ubiquitous. Here, we give an overview of all important advances in the area of doping of organic semiconductors and their applications. We first review the relevant literature with particular focus on the physical processes involved, discussing established mechanisms but also newly proposed theories. We then continue with a comprehensive summary of the most widely studied dopants to date, placing particular emphasis on the chemical strategies toward the synthesis of molecules with improved functionality. The processing routes toward doped organic films and the important doping-processing-nanostructure relationships, are also discussed. We conclude the review by highlighting how doping can enhance the operating characteristics of various organic devices.

One-way rotation of a chemically anchored single molecule-rotor

We present the chemical anchoring of a DMBI-P molecule-rotor to the Au(111) surface after a dissociation reaction. At the temperature of 5 K, the anchored rotor shows a sequential unidirectional rotational motion through six defined stations induced by tunneling electrons. A typical voltage pulse of 400 mV applied on a specific location of the molecule causes a unidirectional rotation of 60° with a probability higher than 95%. When the temperature of the substrate increases above 20 K, the anchoring is maintained and the rotation stops being unidirectional and randomly explores the same six stations. Density functional theory simulations confirm the anchoring reaction. Experimentally, the rotation shows a clear threshold at the onset of the C-H stretch manifold, showing that the molecule is first vibrationally excited and later it decays into the rotational degrees of freedom.

Towards commercialization: the operational stability of perovskite solar cells

Recently, perovskite solar cells (PSCs) have attracted much attention owing to their high power conversion efficiency (25.2%) and low fabrication cost. However, the short lifetime under operation is the major obstacle for their commercialization. With efforts from the entire PSC research community, significant advances have been witnessed to improve the device operational stability, and a timely summary on the progress is urgently needed. In this review, we first clarify the definition of operational stability and its significance in the context of practical use. By analyzing the mechanisms in established approaches for operational stability improvement, we summarize several effective strategies to extend device lifetime in a layer-by-layer sequence across the entire PSC. These mechanisms are discussed in the contexts of chemical reactions, photo-physical management, technological modification, etc., which may inspire future R&D for stable PSCs. Finally, emerging operational stability standards with respect to testing and reporting device operational stability are summarized and discussed, which may help reliable device stability data circulate in the research community. The main target of this review is gaining insight into the operational stability of PSCs, as well as providing useful guidance to further improve their operational lifetime by rational materials processing and device fabrication, which would finally promote the commercialization of perovskite solar cells.

Universal Limit for Air-Stable Molecular n-Doping in Organic Semiconductors

The air sensitivity of n-doped layers is crucial for the long-term stability of organic electronic devices. Although several air-stable and highly efficient n-dopants have been developed, the reason for the varying air sensitivity between different n-doped layers, in which the n-dopant molecules are dispersed, is not fully understood. In contrast to previous studies that compared the air stability of doped films with the energy levels of neat host or dopant layers, we trace back the varying degree of air sensitivity to the energy levels of integer charge transfer states (ICTCs) formed by host anions and dopant cations. Our data indicate a universal limit for the ionization energy of ICTCs above which the n-doped semiconductors are air-stable.

Probe and Control of the Tiny Amounts of Dopants in BHJ Film Enable Higher Performance of Polymer Solar Cells

To achieve efficient doping in polymer solar cells (PSCs), the dopant needs to be selectively located in the binary components of a bulk heterojunction (BHJ) film according to its polarity. The rarely studied n-type dopant is thoroughly examined in a simplified planar heterojunction (PHJ) device to address its favored location in the active layer. Results show that the n-dopant distribution in the acceptor layer or at the donor/acceptor interface produces enhanced device performance, whereas it harms the device when located in the donor layer. Based on the results, the benefit of n-type doping is then transferred to the highly efficient BHJ devices via a sequential coating procedure. The performance improvement is closely linked to the variations in the dopant's location in the BHJ film, which is carefully examined by the synchrotron techniques with delicate chemical sensitivity. More interestingly, the sequential coating procedure can be easily extended to the p-doped device only by changing the dopant's polarity in the middle layer. These findings pave the way for ambipolar doping in PSCs and enable performance improvement by molecular doping within the expectations.

Impact of Singly Occupied Molecular Orbital Energy on the n-Doping Efficiency of Benzimidazole Derivatives

We investigated the impact of singly occupied molecular orbital (SOMO) energy on the n-doping efficiency of benzimidazole derivatives. By designing and synthesizing a series of new air-stable benzimidazole-based dopants with different SOMO energy levels, we demonstrated that an increase of the dopant SOMO energy by only ∼0.3 eV enhances the electrical conductivity of a benchmark electron-transporting naphthalenediimide-bithiophene polymer by more than 1 order of magnitude. By combining electrical, X-ray diffraction, and electron paramagnetic resonance measurements with density functional theory calculations and analytical transport simulations, we quantitatively characterized the conductivity, Seebeck coefficient, spin density, and crystallinity of the doped polymer as a function of the dopant SOMO energy. Our findings strongly indicate that charge and energy transport are dominated by the (relative) position of the SOMO level, whereas morphological differences appear to play a lesser role. These results set molecular-design guidelines for next-generation n-type dopants.

Flexible Thermoelectric Materials and Generators: Challenges and Innovations

The urgent need for ecofriendly, stable, long-lifetime power sources is driving the booming market for miniaturized and integrated electronics, including wearable and medical implantable devices. Flexible thermoelectric materials and devices are receiving increasing attention, due to their capability to convert heat into electricity directly by conformably attaching them onto heat sources. Polymer-based flexible thermoelectric materials are particularly fascinating because of their intrinsic flexibility, affordability, and low toxicity. There are other promising alternatives including inorganic-based flexible thermoelectrics that have high energy-conversion efficiency, large power output, and stability at relatively high temperature. Herein, the state-of-the-art in the development of flexible thermoelectric materials and devices is summarized, including exploring the fundamentals behind the performance of flexible thermoelectric materials and devices by relating materials chemistry and physics to properties. By taking insights from carrier and phonon transport, the limitations of high-performance flexible thermoelectric materials and the underlying mechanisms associated with each optimization strategy are highlighted. Finally, the remaining challenges in flexible thermoelectric materials are discussed in conclusion, and suggestions and a framework to guide future development are provided, which may pave the way for a bright future for flexible thermoelectric devices in the energy market.

Making silver a stronger n-dopant than cesium via in situ coordination reaction for organic electronics

N-doping is an effective way to increase the electron conductivity of organic semiconductors and achieve ohmic cathode contacts in organic electronics. To avoid the use of difficult-to-handle highly reactive n-dopants, air-stable precursors are widely used nowadays, which could decompose to release reactive species in a subtractive way though always with unwanted and even harmful byproducts during processing. Here, we show that air-stable metals, such as copper, silver and gold, could release free electrons readily in the presence of chelating ligands, as the irreversible coordination reaction between metal ions and the ligands would push the equilibrium between metals and metal ions to the forward direction. By using a well-designed multi-functional electron transport material with a strong nucleophilic quality, 4,7-dimethoxy-1,10-phenanthroline (p-MeO-Phen), silver could function as an n-dopant stronger than cesium and could be used to fabricate organic light-emitting diodes with higher performance than the cesium-doped control device.

Doping: A Key Enabler for Organic Transistors

Organic field-effect transistors (OFETs) are the central building blocks of organic electronics, but still suffer from low performance and manufacturing difficulties. This is due in part to the absence of doping, which is mostly excluded from OFET applications for the concern about uncontrollable dopant diffusion. Doping enabled the modern semiconductor industry to build essential components like Ohmic contacts and P-N junctions, empowering devices to function as designed. Recent breakthroughs in organic semiconductors and doping techniques demonstrated that doping can also be a key enabler for high-performance OFETs. However, the knowledge of organic doping remains limited particularly for OFET use. Therefore, this review addresses OFET doping from a device perspective. The paper overviews doping basics and roles in advanced complementary technologies. These fundamentals help to understand why and how doping provides the desired transistor characteristics. Typical OFETs without doping are discussed, with consideration for operating principle and problems caused by the absence of doping. Achievements for channel, contact, and overall doping are also examined to clarify the corresponding doping roles. Finally, doping mechanisms, techniques, and dopants associated with OFET applications are reviewed. This paper promotes fundamental understanding of OFET doping for the development of high-performance OFETs with doped components.

Recent Progress in High-Mobility Organic Transistors: A Reality Check

Over the past three decades, significant research efforts have focused on improving the charge carrier mobility of organic thin-film transistors (OTFTs). In recent years, a commonly observed nonlinearity in OTFT current-voltage characteristics, known as the "kink" or "double slope," has led to widespread mobility overestimations, contaminating the relevant literature. Here, published data from the past 30 years is reviewed to uncover the extent of the field-effect mobility hype and identify the progress that has actually been achieved in the field of OTFTs. Present carrier-mobility-related challenges are identified, finding that reliable hole and electron mobility values of 20 and 10 cm2 V-1 s-1 , respectively, have yet to be achieved. Based on the analysis, the literature is then reviewed to summarize the concepts behind the success of high-performance p-type polymers, along with the latest understanding of the design criteria that will enable further mobility enhancement in n-type polymers and small molecules, and the reasons why high carrier mobility values have been consistently produced from small molecule/polymer blend semiconductors. Overall, this review brings together important information that aids reliable OTFT data analysis, while providing guidelines for the development of next-generation organic semiconductors.

Enhanced n-Doping Efficiency of a Naphthalenediimide-Based Copolymer through Polar Side Chains for Organic Thermoelectrics

N-doping of conjugated polymers either requires a high dopant fraction or yields a low electrical conductivity because of their poor compatibility with molecular dopants. We explore n-doping of the polar naphthalenediimide-bithiophene copolymer p(gNDI-gT2) that carries oligoethylene glycol-based side chains and show that the polymer displays superior miscibility with the benzimidazole-dimethylbenzenamine-based n-dopant N-DMBI. The good compatibility of p(gNDI-gT2) and N-DMBI results in a relatively high doping efficiency of 13% for n-dopants, which leads to a high electrical conductivity of more than 10-1 S cm-1 for a dopant concentration of only 10 mol % when measured in an inert atmosphere. We find that the doped polymer is able to maintain its electrical conductivity for about 20 min when exposed to air and recovers rapidly when returned to a nitrogen atmosphere. Overall, solution coprocessing of p(gNDI-gT2) and N-DMBI results in a larger thermoelectric power factor of up to 0.4 μW K-2 m-1 compared to other NDI-based polymers.

Stable Organic Radicals as Hole Injection Dopants for Efficient Optoelectronics

Precursors of reactive organic radicals have been widely used as n-dopants in electron-transporting materials to improve electron conductivity and enhance electron injection. However, the utilization of organic radicals in hole counterparts has been ignored. In this work, stable organic radicals have been proved for the first time to be efficient dopants to enhance hole injection. From the absorbance spectra and the ultraviolet photoelectron spectra, we could observe an efficient electron transfer between the organic radical, (4-N-carbazolyl-2,6-dichlorophenyl)bis(2,4,6-trichlorophenyl)methyl (TTM-1Cz), and the widely used hole injection material, 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile (HAT-CN). When the unpaired electron of TTM-1Cz is transferred to HAT-CN, it would be oxidized to a TTM-1Cz cation with a newly formed lowest unoccupied molecular orbital which is quite close to the highest occupied molecular orbital (HOMO) of the hole-transporting material (HTM). In this way, the TTM-1Cz cation would promote the electron extraction from the HOMO of the HTM and improve hole injection. Using TTM-1Cz-doped HAT-CN as the hole injection layer, efficient organic light-emitting diodes with extremely low voltages can be attained.

Analyzing the n-Doping Mechanism of an Air-Stable Small-Molecule Precursor

Efficient n-doping of organic semiconductors requires electron-donating molecules with small ionization energies, making such n-dopants usually sensitive to degradation under air exposure. A workaround consists in the usage of air-stable precursor molecules containing the actual n-doping species. Here, we systematically analyze the doping mechanism of the small-molecule precursor o-MeO-DMBI-Cl, which releases a highly reducing o-MeO-DMBI radical upon thermal evaporation. n-Doping of N,N-bis(fluoren-2-yl)-naphthalene tetracarboxylic diimide yields air-stable and highly conductive films suitable for application as electron transport layer in organic solar cells. By photoelectron spectroscopy, we determine a reduced doping efficiency at high doping concentrations. We attribute this reduction to a change of the precursor decomposition mechanism with rising crucible temperature, yielding an undesired demethylation at high evaporation rates. Our results do not only show the possibility of efficient and air-stable n-doping, but also support the design of novel air-stable precursor molecules of strong n-dopants.

Beating the thermodynamic limit with photo-activation of n-doping in organic semiconductors

Chemical doping of organic semiconductors using molecular dopants plays a key role in the fabrication of efficient organic electronic devices. Although a variety of stable molecular p-dopants have been developed and successfully deployed in devices in the past decade, air-stable molecular n-dopants suitable for materials with low electron affinity are still elusive. Here we demonstrate that photo-activation of a cleavable air-stable dimeric dopant can result in kinetically stable and efficient n-doping of host semiconductors, whose reduction potentials are beyond the thermodynamic reach of the dimer's effective reducing strength. Electron-transport layers doped in this manner are used to fabricate high-efficiency organic light-emitting diodes. Our strategy thus enables a new paradigm for using air-stable molecular dopants to improve conductivity in, and provide ohmic contacts to, organic semiconductors with very low electron affinity.

Energy Level Alignment of N-Doping Fullerenes and Fullerene Derivatives Using Air-Stable Dopant

Doping has been proved to be one of the powerful technologies to achieve significant improvement in the performance of organic electronic devices. Herein, we systematically map out the interface properties of solution-processed air-stable n-type (4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl) doping fullerenes and fullerene derivatives and establish a universal energy level alignment scheme for this class of n-doped system. At low doping levels at which the charge-transfer doping induces mainly bound charges, the energy level alignment of the n-doping organic semiconductor can be described by combining integer charger transfer-induced shifts with a so-called double-dipole step. At high doping levels, significant densities of free charges are generated and the charge flows between the organic film and the conducting electrodes equilibrating the Fermi level in a classic "depletion layer" scheme. Moreover, we demonstrate that the model holds for both n- and p-doping of π-backbone molecules and polymers. With the results, we provide wide guidance for identifying the application of the current organic n-type doping technology in organic electronics.

Organic Radicals Outperform LiF as Efficient Electron-Injection Materials for Organic Light-Emitting Diodes

One of the key issues for organic light-emitting diodes (OLEDs) is to achieve high electroluminescence efficiency and high power efficiency, which requires extremely efficient electron injection and thus low driving voltage. Here, we design a series of precursors for reactive organic radicals according to theoretical calculations and achieve efficient electron injection by using a highly reducing radical on the surface of the electron injection layer to reduce the electron injection barrier through an interface charge-transfer process. In contrast to bulk charge transfer in electron-transporting material, interface charge transfer allows us to make efficient electron injection at contact without introducing any structural and electronic disorder to electron-transporting material. 2-(2,4,6-Trimethoxyphenyl)-1,3-dimethyl-1H-benzoimidazol-3-ium (R3), with the strongest electron-donating ability, could largely reduce the electron injection barrier and outperform the previously reported organic radical (2-(2-methoxyphenyl)-1,3-dimethyl-1H-benzoimidazol-3-ium, o-MeO-DMBI or R1) and the widely used electron injection material (LiF) to boost device performance.

N-Type Organic Thermoelectrics: Improved Power Factor by Tailoring Host-Dopant Miscibility

In this contribution, for the first time, the polarity of fullerene derivatives is tailored to enhance the miscibility between the host and dopant molecules. A fullerene derivative with a hydrophilic triethylene glycol type side chain (PTEG-1) is used as the host and (4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl)dimethylamine n-DMBI) as the dopant. Thereby, the doping efficiency can be greatly improved to around 18% (<1% for a nonpolar reference sample) with optimized electrical conductivity of 2.05 S cm^-1 , which represents the best result for solution-processed fullerene derivatives. An in-depth microstructural study indicates that the PTEG-1 molecules readily form layered structures parallel to the substrate after solution processing. The fullerene cage plane is alternated by the triethylene glycol side chain plane; the n-DMBI dopants are mainly incorporated in the side chain plane without disturbing the π-π packing of PTEG-1. This new microstructure, which is rarely observed for codeposited thin films from solution, formed by PTEG-1 and n-DMBI molecules explains the increased miscibility of the host/dopant system at a nanoscale level and the high electrical conductivity. Finally, a power factor of 16.7 µW m^-1 K^-2 is achieved at 40% dopant concentration. This work introduces a new strategy for improving the conductivity of solution-processed n-type organic thermoelectrics.

Efficient Solution-Processed n-Type Small-Molecule Thermoelectric Materials Achieved by Precisely Regulating Energy Level of Organic Dopants

To achieve efficient n-type doping, three dopants, 2-Cyc-DMBI-H, (2-Cyc-DMBI)₂, and (2-Cyc-DMBI-Me)₂, with precisely regulated electron-donating ability were designed and synthesized. By doping with a small-molecule 2DQTT-o-OD with high electron mobility, an unexpectedly high power factor of 33.3 μW m^-1 K^-2 was obtained with the new dopant (2-Cyc-DMBI-Me)₂. Notably, with the intrinsically low lateral thermal conductivity of 0.28 W m^-1 K^-1, the figure of merit was determined to be 0.02 at room temperature. Thus, we have demonstrated that small molecules with high electron mobility and low-lying LUMO energy levels can achieve high doping efficiency and excellent thermoelectric properties by doping with n-type dopants featuring highly matched energy levels and excellent miscibility.

The Impact of Aggregation on the p-Doping Kinetics of Poly(3-hexylthiophene)

The morphological effects of regioregular poly(3-hexylthiophene) (P3HT) on its p-doping kinetics with 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F₄-TCNQ) in solution are studied using optical absorption spectroscopy and stopped-flow technique. Two morphological forms, solubilized (s-P3HT) and nanowhiskers (nw-P3HT), are investigated. Both P3HT solubilized and aggregated solutions show similar characteristic near-IR absorption bands for integer charge transfer products with F₄-TCNQ. Kinetic analysis on p-doping of s-P3HT with F₄-TCNQ indicates that the doping reaction proceeds with a single reaction mechanism that is first order in s-P3HT. The doping kinetics of P3HT aggregate solution shows two distinctive reaction mechanisms. The slow mechanism has a reaction rate constant similar to that of solubilized P3HT solution, so it likely results from s-P3HT components that are present in the aggregate solution. The fast one is assigned to the nw-P3HT component, probably due to more efficient charge delocalization in the aggregated P3HT nanostructures. Additionally, the kinetic trends of the p-doping reactions are better fitted with the consideration of a Gaussian-like distribution of reactivities from P3HT, matching the complexity of polymeric systems originating from molecular weight and morphology variations. This study highlights the importance of considering different morphological forms of conjugated polymers on their charge-transfer reaction kinetics. The knowledge gained here should be fundamentally and practically important for future chemical doping applications in organic electronic device fabrications.

Multifunctional Organic-Semiconductor Interfacial Layers for Solution-Processed Oxide-Semiconductor Thin-Film Transistor

The stabilization and control of the electrical properties in solution-processed amorphous-oxide semiconductors (AOSs) is crucial for the realization of cost-effective, high-performance, large-area electronics. In particular, impurity diffusion, electrical instability, and the lack of a general substitutional doping strategy for the active layer hinder the industrial implementation of copper electrodes and the fine tuning of the electrical parameters of AOS-based thin-film transistors (TFTs). In this study, the authors employ a multifunctional organic-semiconductor (OSC) interlayer as a solution-processed thin-film passivation layer and a charge-transfer dopant. As an electrically active impurity blocking layer, the OSC interlayer enhances the electrical stability of AOS TFTs by suppressing the adsorption of environmental gas species and copper-ion diffusion. Moreover, charge transfer between the organic interlayer and the AOS allows the fine tuning of the electrical properties and the passivation of the electrical defects in the AOS TFTs. The development of a multifunctional solution-processed organic interlayer enables the production of low-cost, high-performance oxide semiconductor-based circuits.

Organic/Organic Heterointerface Engineering to Boost Carrier Injection in OLEDs

We investigate dynamic formation of nanosheet charge accumulations by heterointerface engineering in double injection layer (DIL) based organic light emitting diodes (OLEDs). Our experimental results show that the device performance is considerably improved for the DIL device as the result of heterointerface injection layer (HIIL) formation, in comparison to reference devices, namely, the current density is doubled and even quadrupled and the turn-on voltage is favorably halved, to 3.7 V, which is promising for simple small-molecule OLEDs. The simulation reveals the (i) formation of dynamic p-type doping (DPD) region which treats the quasi Fermi level at the organic/electrode interface, and (ii) formation of dynamic dipole layer (DDL) and the associated electric field at the organic/organic interface which accelerates the ejection of the carriers and their transference to the successive layer. HIIL formation proposes alternate scenarios for device design. For instance, no prerequisite for plasma treatment of transparent anode electrode, our freedom in varying the thicknesses of the organic layers between 10 nm and 60 nm for the first layer and between 6 nm and 24 nm for the second layer. The implications of the present work give insight into the dynamic phenomena in OLEDs and facilitates the development of their inexpensive fabrication for lighting applications.

Efficient and Air-Stable Mixed-Cation Lead Mixed-Halide Perovskite Solar Cells with n-Doped Organic Electron Extraction Layers

Air-stable doping of the n-type fullerene layer in an n-i-p planar heterojunction perovskite device is capable of enhancing device efficiency and improving device stability. Employing a (HC(NH₂ )₂ )_0.83 Cs_0.17 Pb(I_0.6 Br_0.4 )₃ perovskite as the photoactive layer, glass-glass laminated devices are reported, which sustain 80% of their "post burn-in" efficiency over 3400 h under full sun illumination in ambient conditions.

Doping Versatile n-Type Organic Semiconductors via Room Temperature Solution-Processable Anionic Dopants

In this study, we describe a facile solution-processing method to effectively dope versatile n-type organic semiconductors, including fullerene, n-type small molecules, and graphene by commercially available ammonium and phosphonium salts via in situ anion-induced electron transfer. In addition to the Lewis basicity of anions, we unveiled that the ionic binding strength between the cation and anion of the salts is also crucial in modulating the electron transfer strength of the dopants to affect the resulting doping efficiency. Furthermore, combined with the rational design of n-type molecules, an n-doped organic semiconductor is demonstrated to be thermally and environmentally stable. This finding provides a simple and generally applicable method to make highly efficient n-doped conductors which complements the well-established p-doped organics such as PEDOT:PSS for organic electronic applications.

Surpassing the Exciton Diffusion Limit in Single-Walled Carbon Nanotube Sensitized Solar Cells

Semiconducting single-walled carbon nanotube (s-SWNT) light sensitized devices, such as infrared photodetectors and solar cells, have recently been widely reported. Despite their excellent individual electrical properties, efficient carrier transport from one carbon nanotube to another remains a fundamental challenge. Specifically, photovoltaic devices with active layers made from s-SWNTs have suffered from low efficiencies caused by three main challenges: the overwhelming presence of high-bandgap polymers in the films, the weak bandgap offset between the LUMO of the s-SWNTs and the acceptor C₆₀, and the limited exciton diffusion length from one SWNT to another of around 5 nm that limits the carrier extraction efficiency. Herein, we employ a combination of processing and device architecture design strategies to address each of these transport challenges and fabricate photovoltaic devices with s-SWNT films well beyond the exciton diffusion limit of 5 nm. While our solution processing method minimizes the presence of undesired polymers in our active films, our interfacial designs led to a significant increase in current generation with the addition of a highly doped C₆₀ layer (n-doped C₆₀), resulting in increased carrier separation efficiency from the s-SWNTs films. We create a dense interconnected nanoporous mesh of s-SWNTs using solution shearing and infiltrate it with the acceptor C₆₀. Thus, our final engineered bulk heterojunction allows carriers from deep within to be extracted by the C₆₀ registering a 10-fold improvement in performance from our preliminary structures.

Doped Organic Transistors

Organic field-effect transistors hold the promise of enabling low-cost and flexible electronics. Following its success in organic optoelectronics, the organic doping technology is also used increasingly in organic field-effect transistors. Doping not only increases device performance, but it also provides a way to fine-control the transistor behavior, to develop new transistor concepts, and even improve the stability of organic transistors. This Review summarizes the latest progress made in the understanding of the doping technology and its application to organic transistors. It presents the most successful doping models and an overview of the wide variety of materials used as dopants. Further, the influence of doping on charge transport in the most relevant polycrystalline organic semiconductors is reviewed, and a concise overview on the influence of doping on transistor behavior and performance is given. In particular, recent progress in the understanding of contact doping and channel doping is summarized.

Hybrid Modulation-Doping of Solution-Processed Ultrathin Layers of ZnO Using Molecular Dopants

An alternative doping approach that exploits the use of organic donor/acceptor molecules for the effective tuning of the free electron concentration in quasi-2D ZnO transistor channel layers is reported. The method relies on the deposition of molecular dopants/formulations directly onto the ultrathin ZnO channels. Through careful choice of materials combinations, electron transfer from the dopant molecule to ZnO and vice versa is demonstrated.

Remarkable enhancement of charge carrier mobility of conjugated polymer field-effect transistors upon incorporating an ionic additive

Organic semiconductors with high charge carrier mobilities are crucial for flexible electronic applications. Apart from designing new conjugated frameworks, different strategies have been explored to increase charge carrier mobilities. We report a new and simple approach to enhancing the charge carrier mobility of DPP-thieno[3,2-b]thiophene-conjugated polymer by incorporating an ionic additive, tetramethylammonium iodide, without extra treatments into the polymer. The resulting thin films exhibit a very high hole mobility, which is higher by a factor of 24 than that of thin films without the ionic additive under the same conditions. On the basis of spectroscopic grazing incidence wide-angle x-ray scattering and atomic force microscopy studies as well as theoretical calculations, the remarkable enhancement of charge mobility upon addition of tetramethylammonium iodide is attributed primarily to an inhibition of the torsion of the alkyl side chains by the presence of the ionic species, facilitating a more ordered lamellar packing of the alkyl side chains and interchain π-π interactions.

Using an organic radical precursor as an electron injection material for efficient and stable organic light-emitting diodes

Materials with strong reducibility have been used as electron injection layers (EILs) to lower the work function of cathodes and reduce the driving voltage of organic light-emitting diodes (OLEDs). However, the most prominent electron injection materials presented so far are high-temperature-evaporable inorganic salts based on alkaline metals, which suffer from a high tendency of metal diffusion throughout the organic layer and thus reduce the device efficiency and stability. Here, we introduce a new kind of EIL based on a stable precursor of a strongly reducing organic radical. By using an organic precursor, we are able to take the advantage of the low-evaporation-temperature and avoid the problem of metal diffusion, thus improving the device efficiency and stability. Ultraviolet photoelectron spectroscopy (UPS) study indicates that inserting a thin layer of organic radical between the electron transport layer and cathode could greatly reduce the electron injection barrier due to the strong interaction of radical with cathode and the electron transporting material. As a result, OLEDs with an organic radical as the EIL showed a 25.2% higher efficiency and 2.2 times longer lifetime than the control device with conventional LiF as the EIL.