1
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Chavez-Angel E, Tsipas P, Xiao P, Ahmadi MT, Daaoub AHS, Sadeghi H, Sotomayor Torres CM, Dimoulas A, Sachat AE. Engineering Heat Transport Across Epitaxial Lattice-Mismatched van der Waals Heterointerfaces. NANO LETTERS 2023; 23:6883-6891. [PMID: 37467035 PMCID: PMC10416569 DOI: 10.1021/acs.nanolett.3c01280] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/05/2023] [Revised: 06/27/2023] [Indexed: 07/20/2023]
Abstract
Artificially engineered 2D materials offer unique physical properties for thermal management, surpassing naturally occurring materials. Here, using van der Waals epitaxy, we demonstrate the ability to engineer extremely insulating thermal metamaterials based on atomically thin lattice-mismatched Bi2Se3/MoSe2 superlattices and graphene/PdSe2 heterostructures with exceptional thermal resistances (70-202 m2 K/GW) and ultralow cross-plane thermal conductivities (0.012-0.07 W/mK) at room temperature, comparable to those of amorphous materials. Experimental data obtained using frequency-domain thermoreflectance and low-frequency Raman spectroscopy, supported by tight-binding phonon calculations, reveal the impact of lattice mismatch, phonon-interface scattering, size effects, temperature, and interface thermal resistance on cross-plane heat dissipation, uncovering different thermal transport regimes and the dominant role of long-wavelength phonons. Our findings provide essential insights into emerging synthesis and thermal characterization methods and valuable guidance for the development of large-area heteroepitaxial van der Waals films of dissimilar materials with tailored thermal transport characteristics.
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Affiliation(s)
- Emigdio Chavez-Angel
- Catalan
Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona 08193, Spain
| | - Polychronis Tsipas
- Institute
of Nanoscience and Nanotechnology, National
Center for Scientific Research “Demokritos”, Agia Paraskevi, Athens 15341, Greece
| | - Peng Xiao
- Catalan
Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona 08193, Spain
| | | | | | - Hatef Sadeghi
- School
of Engineering, University of Warwick, Coventry CV4 7AL, United Kingdom
| | - Clivia M. Sotomayor Torres
- Catalan
Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona 08193, Spain
- ICREA, Passeig Lluis Companys 23, Barcelona 08010, Spain
| | - Athanasios Dimoulas
- Institute
of Nanoscience and Nanotechnology, National
Center for Scientific Research “Demokritos”, Agia Paraskevi, Athens 15341, Greece
| | - Alexandros El Sachat
- Catalan
Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona 08193, Spain
- Institute
of Nanoscience and Nanotechnology, National
Center for Scientific Research “Demokritos”, Agia Paraskevi, Athens 15341, Greece
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2
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Wang H, Wen Y, Zeng H, Xiong Z, Tu Y, Zhu H, Cheng R, Yin L, Jiang J, Zhai B, Liu C, Shan C, He J. 2D Ferroic Materials for Nonvolatile Memory Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2305044. [PMID: 37486859 DOI: 10.1002/adma.202305044] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/28/2023] [Revised: 07/21/2023] [Indexed: 07/26/2023]
Abstract
The emerging nonvolatile memory technologies based on ferroic materials are promising for producing high-speed, low-power, and high-density memory in the field of integrated circuits. Long-range ferroic orders observed in 2D materials have triggered extensive research interest in 2D magnets, 2D ferroelectrics, 2D multiferroics, and their device applications. Devices based on 2D ferroic materials and heterostructures with an atomically smooth interface and ultrathin thickness have exhibited impressive properties and significant potential for developing advanced nonvolatile memory. In this context, a systematic review of emergent 2D ferroic materials is conducted here, emphasizing their recent research on nonvolatile memory applications, with a view to proposing brighter prospects for 2D magnetic materials, 2D ferroelectric materials, 2D multiferroic materials, and their relevant devices.
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Affiliation(s)
- Hao Wang
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Hui Zeng
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Ziren Xiong
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Yangyuan Tu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Hao Zhu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Lei Yin
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Jian Jiang
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Baoxing Zhai
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Chuansheng Liu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Chongxin Shan
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou, 450052, China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
- Hubei Luojia Laboratory, Wuhan, 430079, China
- Wuhan Institute of Quantum Technology, Wuhan, 430206, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, China
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3
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Zhou S, Liao L, Chen J, Yu Y, Lv Z, Yang M, Yao B, Zhang S, Peng G, Huang Z, Liu Y, Qi X, Wang G. Periodic Ferroelectric Stripe Domains in α-In 2Se 3 Nanoflakes Grown via Reverse-Flow Chemical Vapor Deposition. ACS APPLIED MATERIALS & INTERFACES 2023; 15:23613-23622. [PMID: 37149900 DOI: 10.1021/acsami.3c01886] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/09/2023]
Abstract
The two-dimensional (2D) layered semiconductor α-In2Se3 has aroused great interest in atomic-scale ferroelectric transistors, artificial synapses, and nonvolatile memory devices due to its distinguished 2D ferroelectric properties. We have synthesized α-In2Se3 nanosheets with rare in-plane ferroelectric stripe domains at room temperature on mica substrates using a reverse flow chemical vapor deposition (RFCVD) method and optimized growth parameters. This stripe domain contrast is found to be strongly correlated to the stacking of layers, and the interrelated out-of-plane (OOP) and in-plane (IP) polarization can be manipulated by mapping the artificial domain structure. The acquisition of amplitude and phase hysteresis loops confirms the OOP polarization ferroelectric property. The emergence of striped domains enriches the variety of the ferroelectric structure types and novel properties of 2D In2Se3. This work paves a new way for the controllable growth of van der Waals ferroelectrics and facilitates the development of novel ferroelectric memory device applications.
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Affiliation(s)
- Suyuan Zhou
- Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, School of Physics and Optoelectronic, Xiangtan University, Xiangtan 411105, China
- Department of Physics, College of Sciences, National University of Defense Technology, Changsha 410073, China
| | - Luocheng Liao
- Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China
| | - Jiahao Chen
- Department of Physics, College of Sciences, National University of Defense Technology, Changsha 410073, China
| | - Yayun Yu
- Department of Physics, College of Sciences, National University of Defense Technology, Changsha 410073, China
| | - Zhiquan Lv
- Department of Physics, College of Sciences, National University of Defense Technology, Changsha 410073, China
| | - Ming Yang
- Department of Physics, College of Sciences, National University of Defense Technology, Changsha 410073, China
| | - Bowen Yao
- Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, School of Physics and Optoelectronic, Xiangtan University, Xiangtan 411105, China
- Department of Physics, College of Sciences, National University of Defense Technology, Changsha 410073, China
| | - Sen Zhang
- Department of Physics, College of Sciences, National University of Defense Technology, Changsha 410073, China
| | - Gang Peng
- Department of Physics, College of Sciences, National University of Defense Technology, Changsha 410073, China
| | - Zongyu Huang
- Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, School of Physics and Optoelectronic, Xiangtan University, Xiangtan 411105, China
| | - Yunya Liu
- Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China
| | - Xiang Qi
- Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, School of Physics and Optoelectronic, Xiangtan University, Xiangtan 411105, China
| | - Guang Wang
- Department of Physics, College of Sciences, National University of Defense Technology, Changsha 410073, China
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4
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Meng Q, Yu F, Liu G, Zong J, Tian Q, Wang K, Qiu X, Wang C, Xi X, Zhang Y. Thickness-Dependent Evolutions of Surface Reconstruction and Band Structures in Epitaxial β-In2Se3 Thin Films. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:nano13091533. [PMID: 37177078 PMCID: PMC10180126 DOI: 10.3390/nano13091533] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/09/2023] [Revised: 04/29/2023] [Accepted: 04/29/2023] [Indexed: 05/15/2023]
Abstract
Ferroelectric materials have received great attention in the field of data storage, benefiting from their exotic transport properties. Among these materials, the two-dimensional (2D) In2Se3 has been of particular interest because of its ability to exhibit both in-plane and out-of-plane ferroelectricity. In this article, we realized the molecular beam epitaxial (MBE) growth of β-In2Se3 films on bilayer graphene (BLG) substrates with precisely controlled thickness. Combining in situ scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES) measurements, we found that the four-monolayer β-In2Se3 is a semiconductor with a (9 × 1) reconstructed superlattice. In contrast, the monolayer β-In2Se3/BLG heterostructure does not show any surface reconstruction due to the interfacial interaction and moiré superlattice, which instead results in a folding Dirac cone at the center of the Brillouin zone. In addition, we found that the band gap of In2Se3 film decreases after potassium doping on its surface, and the valence band maximum also shifts in momentum after surface potassium doping. The successful growth of high-quality β-In2Se3 thin films would be a new platform for studying the 2D ferroelectric heterostructures and devices. The experimental results on the surface reconstruction and band structures also provide important information on the quantum confinement and interfacial effects in the epitaxial β-In2Se3 films.
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Affiliation(s)
- Qinghao Meng
- National Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, China
| | - Fan Yu
- National Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, China
| | - Gan Liu
- National Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, China
| | - Junyu Zong
- National Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, China
| | - Qichao Tian
- National Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, China
| | - Kaili Wang
- National Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, China
| | - Xiaodong Qiu
- National Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, China
| | - Can Wang
- National Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
- School of Physics and Electronic Sciences, Changsha University of Science and Technology, Changsha 410114, China
| | - Xiaoxiang Xi
- National Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Yi Zhang
- National Laboratory of Solid State Microstructure, School of Physics, Nanjing University, Nanjing 210093, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
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5
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Yan S, Xu C, Zhong C, Chen Y, Che X, Luo X, Zhu Y. Phase Instability in van der Waals In 2 Se 3 Determined by Surface Coordination. Angew Chem Int Ed Engl 2023; 62:e202300302. [PMID: 36861653 DOI: 10.1002/anie.202300302] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/09/2023] [Revised: 02/16/2023] [Accepted: 03/01/2023] [Indexed: 03/03/2023]
Abstract
van der Waals In2 Se3 has attracted significant attention for its room-temperature 2D ferroelectricity/antiferroelectricity down to monolayer thickness. However, instability and potential degradation pathway in 2D In2 Se3 have not yet been adequately addressed. Using a combination of experimental and theoretical approaches, we here unravel the phase instability in both α- and β'-In2 Se3 originating from the relatively unstable octahedral coordination. Together with the broken bonds at the edge steps, it leads to moisture-facilitated oxidation of In2 Se3 in air to form amorphous In2 Se3-3x O3x layers and Se hemisphere particles. Both O2 and H2 O are required for such surface oxidation, which can be further promoted by light illumination. In addition, the self-passivation effect from the In2 Se3-3x O3x layer can effectively limit such oxidation to only a few nanometer thickness. The achieved insight paves way for better understanding and optimizing 2D In2 Se3 performance for device applications.
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Affiliation(s)
- Shanru Yan
- Department of Applied Physics, Research Institute for Smart Energy, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P.R. China
| | - Chao Xu
- Department of Applied Physics, Research Institute for Smart Energy, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P.R. China
| | - Cenchen Zhong
- Department of Applied Physics, Research Institute for Smart Energy, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P.R. China
| | - Yancong Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou, P.R. China
| | - Xiangli Che
- Department of Applied Physics, Research Institute for Smart Energy, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P.R. China
| | - Xin Luo
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou, P.R. China
| | - Ye Zhu
- Department of Applied Physics, Research Institute for Smart Energy, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P.R. China
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6
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Han W, Zheng X, Yang K, Tsang CS, Zheng F, Wong LW, Lai KH, Yang T, Wei Q, Li M, Io WF, Guo F, Cai Y, Wang N, Hao J, Lau SP, Lee CS, Ly TH, Yang M, Zhao J. Phase-controllable large-area two-dimensional In 2Se 3 and ferroelectric heterophase junction. NATURE NANOTECHNOLOGY 2023; 18:55-63. [PMID: 36509923 DOI: 10.1038/s41565-022-01257-3] [Citation(s) in RCA: 24] [Impact Index Per Article: 24.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/08/2022] [Accepted: 10/06/2022] [Indexed: 06/17/2023]
Abstract
Memory transistors based on two-dimensional (2D) ferroelectric semiconductors are intriguing for next-generation in-memory computing. To date, several 2D ferroelectric materials have been unveiled, among which 2D In2Se3 is the most promising, as all the paraelectric (β), ferroelectric (α) and antiferroelectric (β') phases are found in 2D quintuple layers. However, the large-scale synthesis of 2D In2Se3 films with the desired phase is still absent, and the stability for each phase remains obscure. Here we show the successful growth of centimetre-scale 2D β-In2Se3 film by chemical vapour deposition including distinct centimetre-scale 2D β'-In2Se3 film by an InSe precursor. We also demonstrate that as-grown 2D β'-In2Se3 films on mica substrates can be delaminated or transferred onto flexible or uneven substrates, yielding α-In2Se3 films through a complete phase transition. Thus, a full spectrum of paraelectric, ferroelectric and antiferroelectric 2D films can be readily obtained by means of the correlated polymorphism in 2D In2Se3, enabling 2D memory transistors with high electron mobility, and polarizable β'-α In2Se3 heterophase junctions with improved non-volatile memory performance.
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Affiliation(s)
- Wei Han
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China
- Hubei Yangtze Memory Laboratories, Hubei University, Wuhan, China
| | - Xiaodong Zheng
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China
| | - Ke Yang
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China
- Department of Computing, The Hong Kong Polytechnic University, Kowloon, China
| | - Chi Shing Tsang
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China
| | - Fangyuan Zheng
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China
| | - Lok Wing Wong
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China
| | - Ka Hei Lai
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China
| | - Tiefeng Yang
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, China
- City University of Hong Kong, Shenzhen Research Institute, Shenzhen, China
| | - Qi Wei
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China
| | - Mingjie Li
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China
| | - Weng Fu Io
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China
| | - Feng Guo
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China
| | - Yuan Cai
- Department of Physics, Hong Kong University of Science and Technology, Hong Kong, China
| | - Ning Wang
- Department of Physics, Hong Kong University of Science and Technology, Hong Kong, China
| | - Jianhua Hao
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China
| | - Shu Ping Lau
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China
| | - Chun-Sing Lee
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, China
| | - Thuc Hue Ly
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, China.
- City University of Hong Kong, Shenzhen Research Institute, Shenzhen, China.
| | - Ming Yang
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China.
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China.
| | - Jiong Zhao
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China.
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China.
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7
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Liu F, Shi J, Xu J, Han N, Cheng Y, Huang W. Site-selective growth of two-dimensional materials: strategies and applications. NANOSCALE 2022; 14:9946-9962. [PMID: 35802071 DOI: 10.1039/d2nr02093a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Over the years, there have been major advances in two-dimensional (2D) materials on account of their excellent and unique properties. Among the various strategies for 2D material fabrication, chemical vapor deposition (CVD) is considered as the most promising method to achieve large-area and high-quality 2D film growth. Furthermore, to realize the potential applications of 2D materials in different fields, the integration of 2D materials into functional devices is essential. However, the materials made by common CVD are randomly distributed on substrates, which is disadvantageous for fabricating arrays of devices. To solve this problem, a site-selective growth method was developed to meet the requirement of batch production for practical applications because it achieves control over the locations of products and benefits the subsequent direct integration. Herein, state-of-the-art methods for site-selective synthesis, including seeded growth and patterned growth, are reviewed. Then, the electronic and optoelectronic applications of the as-grown 2D materials are also reviewed. Finally, the remaining challenges and future prospects regarding site-selective methods and applications are discussed.
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Affiliation(s)
- Fan Liu
- Frontiers Science Center for Flexible Electronics (FSCFE), Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering (IBME), Northwestern Polytechnical University, Xi'an 710072, China.
| | - Jian Shi
- Frontiers Science Center for Flexible Electronics (FSCFE), Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering (IBME), Northwestern Polytechnical University, Xi'an 710072, China.
| | - Jinpeng Xu
- Frontiers Science Center for Flexible Electronics (FSCFE), Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering (IBME), Northwestern Polytechnical University, Xi'an 710072, China.
| | - Nannan Han
- Frontiers Science Center for Flexible Electronics (FSCFE), Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering (IBME), Northwestern Polytechnical University, Xi'an 710072, China.
| | - Yingchun Cheng
- Frontiers Science Center for Flexible Electronics (FSCFE), Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering (IBME), Northwestern Polytechnical University, Xi'an 710072, China.
- Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing 211816, China
| | - Wei Huang
- Frontiers Science Center for Flexible Electronics (FSCFE), Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering (IBME), Northwestern Polytechnical University, Xi'an 710072, China.
- Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing 211816, China
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8
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Li CH, Moon J, van 't Erve OMJ, Wickramaratne D, Cobas ED, Johannes MD, Jonker BT. Spin-Sensitive Epitaxial In 2Se 3 Tunnel Barrier in In 2Se 3/Bi 2Se 3 Topological van der Waals Heterostructure. ACS APPLIED MATERIALS & INTERFACES 2022; 14:34093-34100. [PMID: 35820066 DOI: 10.1021/acsami.2c08053] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Current-generated spin arising from spin-momentum locking in topological insulator (TI) surface states has been shown to switch the magnetization of an adjacent ferromagnet (FM) via spin-orbit torque (SOT) with a much higher efficiency than heavy metals. However, in such FM/TI heterostructures, most of the current is shunted through the FM metal due to its lower resistance, and recent calculations have also shown that topological surface states can be significantly impacted when interfaced with an FM metal such as Ni and Co. Hence, placing an insulating layer between the TI and FM will not only prevent current shunting, therefore minimizing overall power consumption, but may also help preserve the topological surface states at the interface. Here, we report the van der Waals epitaxial growth of β-phase In2Se3 on Bi2Se3 by molecular beam epitaxy and demonstrate its spin sensitivity by the electrical detection of current-generated spin in Bi2Se3 surface states using a Fe/In2Se3 detector contact. Our density functional calculations further confirm that the linear dispersion and spin texture of the Bi2Se3 surface states are indeed preserved at the In2Se3/Bi2Se3 interface. This demonstration of an epitaxial crystalline spin-sensitive barrier that can be grown directly on Bi2Se3, and verification that it preserves the topological surface state, is electrically insulating and spin-sensitive, is an important step toward minimizing overall power consumption in SOT switching in TI/FM heterostructures in fully epitaxial topological spintronic devices.
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Affiliation(s)
- Connie H Li
- Materials Science and Technology Division, Naval Research Laboratory, Washington, DC 20375, United States
| | - Jisoo Moon
- Materials Science and Technology Division, Naval Research Laboratory, Washington, DC 20375, United States
- National Research Council, Washington, DC 20001, United States
| | - Olaf M J van 't Erve
- Materials Science and Technology Division, Naval Research Laboratory, Washington, DC 20375, United States
| | - Darshana Wickramaratne
- Materials Science and Technology Division, Naval Research Laboratory, Washington, DC 20375, United States
| | - Enrique D Cobas
- Materials Science and Technology Division, Naval Research Laboratory, Washington, DC 20375, United States
| | - Michelle D Johannes
- Materials Science and Technology Division, Naval Research Laboratory, Washington, DC 20375, United States
| | - Berend T Jonker
- Materials Science and Technology Division, Naval Research Laboratory, Washington, DC 20375, United States
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9
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Malik M, Iqbal MA, Choi JR, Pham PV. 2D Materials for Efficient Photodetection: Overview, Mechanisms, Performance and UV-IR Range Applications. Front Chem 2022; 10:905404. [PMID: 35668828 PMCID: PMC9165695 DOI: 10.3389/fchem.2022.905404] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/27/2022] [Accepted: 04/15/2022] [Indexed: 11/25/2022] Open
Abstract
Two-dimensional (2D) materials have been widely used in photodetectors owing to their diverse advantages in device fabrication and manipulation, such as integration flexibility, availability of optical operation through an ultrabroad wavelength band, fulfilling of photonic demands at low cost, and applicability in photodetection with high-performance. Recently, transition metal dichalcogenides (TMDCs), black phosphorus (BP), III-V materials, heterostructure materials, and graphene have emerged at the forefront as intriguing basics for optoelectronic applications in the field of photodetection. The versatility of photonic systems composed of these materials enables their wide range of applications, including facilitation of chemical reactions, speeding-up of responses, and ultrasensitive light detection in the ultraviolet (UV), visible, mid-infrared (MIR), and far-infrared (FIR) ranges. This review provides an overview, evaluation, recent advancements as well as a description of the innovations of the past few years for state-of-the-art photodetectors based on two-dimensional materials in the wavelength range from UV to IR, and on the combinations of different two-dimensional crystals with other nanomaterials that are appealing for a variety of photonic applications. The device setup, materials synthesis, operating methods, and performance metrics for currently utilized photodetectors, along with device performance enhancement factors, are summarized.
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Affiliation(s)
- Maria Malik
- Centre of Excellence in Solid State Physics, University of the Punjab, Lahore, Pakistan
| | - Muhammad Aamir Iqbal
- School of Materials Science and Engineering, Zhejiang University, Hangzhou, China
| | | | - Phuong V Pham
- Hangzhou Global Scientific and Technological Innovation Center, School of Micro-Nano Electronics, Zhejiang University, Hangzhou, China
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10
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Pham PV, Bodepudi SC, Shehzad K, Liu Y, Xu Y, Yu B, Duan X. 2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges. Chem Rev 2022; 122:6514-6613. [PMID: 35133801 DOI: 10.1021/acs.chemrev.1c00735] [Citation(s) in RCA: 89] [Impact Index Per Article: 44.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
A grand family of two-dimensional (2D) materials and their heterostructures have been discovered through the extensive experimental and theoretical efforts of chemists, material scientists, physicists, and technologists. These pioneering works contribute to realizing the fundamental platforms to explore and analyze new physical/chemical properties and technological phenomena at the micro-nano-pico scales. Engineering 2D van der Waals (vdW) materials and their heterostructures via chemical and physical methods with a suitable choice of stacking order, thickness, and interlayer interactions enable exotic carrier dynamics, showing potential in high-frequency electronics, broadband optoelectronics, low-power neuromorphic computing, and ubiquitous electronics. This comprehensive review addresses recent advances in terms of representative 2D materials, the general fabrication methods, and characterization techniques and the vital role of the physical parameters affecting the quality of 2D heterostructures. The main emphasis is on 2D heterostructures and 3D-bulk (3D) hybrid systems exhibiting intrinsic quantum mechanical responses in the optical, valley, and topological states. Finally, we discuss the universality of 2D heterostructures with representative applications and trends for future electronics and optoelectronics (FEO) under the challenges and opportunities from physical, nanotechnological, and material synthesis perspectives.
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Affiliation(s)
- Phuong V Pham
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Srikrishna Chanakya Bodepudi
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Khurram Shehzad
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Yuan Liu
- School of Physics and Electronics, Hunan University, Hunan 410082, China
| | - Yang Xu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Bin Yu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles (UCLA), Los Angeles, California 90095-1569, United States
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11
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Mukherjee S, Koren E. Indium Selenide (In
2
Se
3
) – An Emerging Van‐der‐Waals Material for Photodetection and Non‐Volatile Memory Applications. Isr J Chem 2022. [DOI: 10.1002/ijch.202100112] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Affiliation(s)
- Subhrajit Mukherjee
- Nanoscale Electronic Materials & Devices Laboratory, Faculty of Materials Science and Engineering, Technion – Israel Institute of Technology 3200003 Haifa Israel
| | - Elad Koren
- Nanoscale Electronic Materials & Devices Laboratory, Faculty of Materials Science and Engineering, Technion – Israel Institute of Technology 3200003 Haifa Israel
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12
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Li J, Li H, Niu X, Wang Z. Low-Dimensional In 2Se 3 Compounds: From Material Preparations to Device Applications. ACS NANO 2021; 15:18683-18707. [PMID: 34870407 DOI: 10.1021/acsnano.1c03836] [Citation(s) in RCA: 18] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Nanostructured In2Se3 compounds have been widely used in electronics, optoelectronics, and thermoelectrics. Recently, the revelation of ferroelectricity in low-dimensional (low-D) In2Se3 has caused a new upsurge of scientific interest in nanostructured In2Se3 and advanced functional devices. The ferroelectric, thermoelectric, and optoelectronic properties of In2Se3 are highly correlated with the crystal structure. In this review, we summarize the crystal structures and electronic band structures of the widely interested members of the In2Se3 compound family. Recent achievements in the preparation of low-D In2Se3 with controlled phases are discussed in detail. General principles for obtaining pure-phased In2Se3 nanostructures are described. The excellent ferroelectric, optoelectronic, and thermoelectric properties having been demonstrated using nanostructured and heterostructured In2Se3 with different phases are also summarized. Progress and challenges on the applications of In2Se3 nanostructures in nonvolatile memories, photodetectors, gas sensors, strain sensors, and photovoltaics are discussed in detail. In the last part of this review, perspectives on the challenges and opportunities in the preparation and applications of In2Se3 materials are presented.
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Affiliation(s)
- Junye Li
- School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Handong Li
- School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Xiaobin Niu
- School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Zhiming Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
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13
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Meng S, Wang J, Shi H, Sun X, Gao B. Distinct ultrafast carrier dynamics of α-In 2Se 3 and β-In 2Se 3: contributions from band filling and bandgap renormalization. Phys Chem Chem Phys 2021; 23:24313-24318. [PMID: 34673867 DOI: 10.1039/d1cp03874e] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
As an intrigued layered 2D semiconductor material, indium selenide (In2Se3) has attracted widespread attention due to its excellent properties. So far, the carrier dynamics of α-In2Se3 and β-In2Se3 are still lacking a comprehensive understanding, which is essential to enhancing the performance of In2Se3-based optoelectronic devices. In this study, we explored the ultrafast carrier dynamics in thin α-In2Se3 and β-In2Se3via transient absorption microscopy. For α-In2Se3 with a narrower bandgap, band filling and bandgap renormalization jointly governed the time evolution of the differential reflectivity signal, whose magnitude and sign at different delays were determined by the weights between the band filling and bandgap renormalization, depending on the carrier density. For β-In2Se3, whose bandgap is close to the probe photon energy, only positive differential reflectivity was detected, which was attributed to strong band filling effect. In both materials, the lifetime decreased and the relative amplitude of the Auger process increased, when the pump fluence was increased. These findings could provide further insights into the optical and optoelectronic properties of In2Se3-based devices.
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Affiliation(s)
- Shengjie Meng
- Institute of Modern Optics, School of Physics, Key Laboratory of Micro-Nano Optoelectronic Information System, Ministry of Industry and Information Technology, Key Laboratory of Micro-Optics and Photonic Technology of Heilongjiang Province, Harbin Institute of Technology, Harbin 150001, China.
| | - Jian Wang
- Institute of Modern Optics, School of Physics, Key Laboratory of Micro-Nano Optoelectronic Information System, Ministry of Industry and Information Technology, Key Laboratory of Micro-Optics and Photonic Technology of Heilongjiang Province, Harbin Institute of Technology, Harbin 150001, China.
| | - Hongyan Shi
- Institute of Modern Optics, School of Physics, Key Laboratory of Micro-Nano Optoelectronic Information System, Ministry of Industry and Information Technology, Key Laboratory of Micro-Optics and Photonic Technology of Heilongjiang Province, Harbin Institute of Technology, Harbin 150001, China. .,Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China
| | - Xiudong Sun
- Institute of Modern Optics, School of Physics, Key Laboratory of Micro-Nano Optoelectronic Information System, Ministry of Industry and Information Technology, Key Laboratory of Micro-Optics and Photonic Technology of Heilongjiang Province, Harbin Institute of Technology, Harbin 150001, China. .,Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China
| | - Bo Gao
- Institute of Modern Optics, School of Physics, Key Laboratory of Micro-Nano Optoelectronic Information System, Ministry of Industry and Information Technology, Key Laboratory of Micro-Optics and Photonic Technology of Heilongjiang Province, Harbin Institute of Technology, Harbin 150001, China. .,Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China
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14
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Liu M, Liao T, Sun Z, Gu Y, Kou L. 2D ferroelectric devices: working principles and research progress. Phys Chem Chem Phys 2021; 23:21376-21384. [PMID: 34614052 DOI: 10.1039/d1cp02788c] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/20/2023]
Abstract
Two-dimensional (2D) ferroelectric materials are promising for use in high-performance nanoelectronic devices due to the non-volatility, high storage density, low energy cost and short response time originating from their bistable and switchable polarization states. In this mini review, we first discuss the mechanism and operation principles of ferroelectric devices to facilitate understanding of these novel nanoelectronics and then summarize the latest research progress of electronic devices based on 2D ferroelectrics. Finally, the perspectives for future research and development directions in various fields are provided. We expect this will provide an overview regarding the application of 2D ferroelectrics in electronic appliances.
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Affiliation(s)
- Minghao Liu
- School of Mechanical, Medical and Process Engineering, Queensland University of Technology, Brisbane, QLD 4001, Australia.
| | - Ting Liao
- School of Mechanical, Medical and Process Engineering, Queensland University of Technology, Brisbane, QLD 4001, Australia.
| | - Ziqi Sun
- School of Chemistry and Physics, Queensland University of Technology, Brisbane, QLD 4001, Australia
| | - Yuantong Gu
- School of Mechanical, Medical and Process Engineering, Queensland University of Technology, Brisbane, QLD 4001, Australia.
| | - Liangzhi Kou
- School of Mechanical, Medical and Process Engineering, Queensland University of Technology, Brisbane, QLD 4001, Australia.
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15
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Zhang Z, Yuan Y, Zhou W, Chen C, Yuan S, Zeng H, Fu YS, Zhang W. Strain-Induced Bandgap Enhancement of InSe Ultrathin Films with Self-Formed Two-Dimensional Electron Gas. ACS NANO 2021; 15:10700-10709. [PMID: 34080842 DOI: 10.1021/acsnano.1c03724] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Atomically thin indium selenide (InSe) is a representative two-dimensional (2D) family that have recently attracted extensive interest for their intriguing emerging physics and potential optoelectronic applications with high-performance. Here, by utilizing molecular beam epitaxy and scanning tunneling microscopy, we report a controlled synthesis of InSe thin films down to the monolayer limit and characterization of their electronic properties at atomic scale. Highly versatile growth conditions are developed to fabricate well crystalline InSe films, with a reversible and controllable phase transformation between InSe and In2Se3. The band gap size of InSe films, as enhanced by quantum confinement, increases with decreasing film thickness. Near various categories of lattice imperfections, the band gap becomes significantly enlarged, resulting in a type-I band alignments for lateral heterojunctions. Such band gap enhancement, as unveiled from our first-principles calculations, is ascribed to the local compressive strain imposed by the lattice imperfections. Moreover, InSe films host highly conductive 2D electron gas, manifesting prominent quasiparticle scattering signatures. The 2D electron gas is self-formed via substrate doping of electrons, which shift the Fermi level above the confinement-quantized conduction band. Our study identifies InSe ultrathin film as an appealing system for both fundamental research and potential applications in nanoelectrics and optoelectronics.
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Affiliation(s)
- Zhimo Zhang
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Yuan Yuan
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Weiqing Zhou
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Chen Chen
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Science at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Shengjun Yuan
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Hualing Zeng
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Science at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Ying-Shuang Fu
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Wenhao Zhang
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China
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16
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Yin H, Xing K, Zhang Y, Dissanayake DMAS, Lu Z, Zhao H, Zeng Z, Yun JH, Qi DC, Yin Z. Periodic nanostructures: preparation, properties and applications. Chem Soc Rev 2021; 50:6423-6482. [PMID: 34100047 DOI: 10.1039/d0cs01146k] [Citation(s) in RCA: 18] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Abstract
Periodic nanostructures, a group of nanomaterials consisting of single or multiple nano units/components periodically arranged into ordered patterns (e.g., vertical and lateral superlattices), have attracted tremendous attention in recent years due to their extraordinary physical and chemical properties that offer a huge potential for a multitude of applications in energy conversion, electronic and optoelectronic applications. Recent advances in the preparation strategies of periodic nanostructures, including self-assembly, epitaxy, and exfoliation, have paved the way to rationally modulate their ferroelectricity, superconductivity, band gap and many other physical and chemical properties. For example, the recent discovery of superconductivity observed in "magic-angle" graphene superlattices has sparked intensive studies in new ways, creating superlattices in twisted 2D materials. Recent development in the various state-of-the-art preparations of periodic nanostructures has created many new ideas and findings, warranting a timely review. In this review, we discuss the current advances of periodic nanostructures, including their preparation strategies, property modulations and various applications.
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Affiliation(s)
- Hang Yin
- Research School of Chemistry, Australian National University, ACT 2601, Australia.
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17
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Liu H, Xue Y. Van Der Waals Epitaxial Growth and Phase Transition of Layered FeSe 2 Nanocrystals. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2008456. [PMID: 33759241 DOI: 10.1002/adma.202008456] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/15/2020] [Revised: 02/01/2021] [Indexed: 06/12/2023]
Abstract
Layered iron chalcogenides (FeX, X = S, Se, Te) provide excellent platforms to study intertwined phase transitions, superconductivity, and magnetism. However, layered iron dichalcogenides (FeX2 , X = S, Se, Te) are rarely reported and their intrinsic properties are still unknown. Here, phase-pure layered iron diselenide (FeSe2 ) nanocrystals are epitaxially grown on mica by the sublimed-salt-assisted chemical vapor deposition method at atmospheric pressure. The layered atomic structure of FeSe2 is confirmed by X-ray diffraction and atomic-resolution scanning transmission electron microscopy. Electrical transport shows that the layered FeSe2 is a metal with high conductivity and a phase transition at ≈11 K. The phase transition manifests itself as a kink in the temperature-dependent resistivity, as well as anomalous magnetoresistance (MR) appearing around the phase-transition temperature. The MR changes from negative to positive, accompanied by large hysteresis near the phase-transition temperature upon cooling. The negative MR and hysteresis might originate from magnetic field suppression scattering of spin fluctuations and competition of magnetic interactions induced by the phase transition, respectively. Layered iron dichalcogenide will be potential candidate to explore novel quantum phenomena and other applications.
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Affiliation(s)
- Hongtao Liu
- College of Chemistry and Environmental Engineering, Shenzhen University, Shenzhen, 518052, P. R. China
- Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, P. R. China
| | - Yunzhou Xue
- College of Chemistry and Environmental Engineering, Shenzhen University, Shenzhen, 518052, P. R. China
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18
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Portone A, Bellucci L, Convertino D, Mezzadri F, Piccinini G, Giambra MA, Miseikis V, Rossi F, Coletti C, Fabbri F. Deterministic synthesis of Cu 9S 5 flakes assisted by single-layer graphene arrays. NANOSCALE ADVANCES 2021; 3:1352-1361. [PMID: 36132865 PMCID: PMC9419617 DOI: 10.1039/d0na00997k] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/27/2020] [Accepted: 02/01/2021] [Indexed: 06/15/2023]
Abstract
The employment of two-dimensional materials, as growth substrates or buffer layers, enables the epitaxial growth of layered materials with different crystalline symmetries with a preferential crystalline orientation and the synthesis of heterostructures with a large lattice constant mismatch. In this work, we employ single crystalline graphene to modify the sulfurization dynamics of copper foil for the deterministic synthesis of large-area Cu9S5 crystals. Molecular dynamics simulations using the Reax force-field are used to mimic the sulfurization process of a series of different atomistic systems specifically built to understand the role of graphene during the sulphur atom attack over the Cu(111) surface. Cu9S5 flakes show a flat morphology with an average lateral size of hundreds of micrometers. Cu9S5 presents a direct band-gap of 2.5 eV evaluated with light absorption and light emission spectroscopies. Electrical characterization shows that the Cu9S5 crystals present high p-type doping with a hole mobility of 2 cm2 V-1 s-1.
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Affiliation(s)
- A Portone
- NEST, Istituto Nanoscienze - CNR, Scuola Normale Superiore Piazza San Silvestro 12 56127 Pisa Italy
| | - L Bellucci
- NEST, Istituto Nanoscienze - CNR, Scuola Normale Superiore Piazza San Silvestro 12 56127 Pisa Italy
| | - D Convertino
- CNI@NEST, Istituto Italiano di Tecnologia Piazza San Silvestro 12 56127 Pisa Italy
- Graphene Labs, Istituto Italiano di Tecnologia Via Morego 30 16163 Genova Italy
| | - F Mezzadri
- IMEM-CNR Parco Area delle Scienze 37/a Parma 43124 Italy
- Department of Chemistry, Life Sciences and Environmental Sustainability, University of Parma Parco Area delle Scienze 11/A 43124 Parma Italy
| | - G Piccinini
- CNI@NEST, Istituto Italiano di Tecnologia Piazza San Silvestro 12 56127 Pisa Italy
- Scuola Normale Superiore Piazza San Silvestro 12 56127 Pisa Italy
| | - M A Giambra
- CNIT, Sant'Anna Via G. Moruzzi 1 Pisa 56124 Italy
| | - V Miseikis
- CNI@NEST, Istituto Italiano di Tecnologia Piazza San Silvestro 12 56127 Pisa Italy
- Graphene Labs, Istituto Italiano di Tecnologia Via Morego 30 16163 Genova Italy
| | - F Rossi
- IMEM-CNR Parco Area delle Scienze 37/a Parma 43124 Italy
| | - C Coletti
- CNI@NEST, Istituto Italiano di Tecnologia Piazza San Silvestro 12 56127 Pisa Italy
- Graphene Labs, Istituto Italiano di Tecnologia Via Morego 30 16163 Genova Italy
| | - F Fabbri
- NEST, Istituto Nanoscienze - CNR, Scuola Normale Superiore Piazza San Silvestro 12 56127 Pisa Italy
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19
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Bergeron H, Lebedev D, Hersam MC. Polymorphism in Post-Dichalcogenide Two-Dimensional Materials. Chem Rev 2021; 121:2713-2775. [PMID: 33555868 DOI: 10.1021/acs.chemrev.0c00933] [Citation(s) in RCA: 40] [Impact Index Per Article: 13.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/21/2022]
Abstract
Two-dimensional (2D) materials exhibit a wide range of atomic structures, compositions, and associated versatility of properties. Furthermore, for a given composition, a variety of different crystal structures (i.e., polymorphs) can be observed. Polymorphism in 2D materials presents a fertile landscape for designing novel architectures and imparting new functionalities. The objective of this Review is to identify the polymorphs of emerging 2D materials, describe their polymorph-dependent properties, and outline methods used for polymorph control. Since traditional 2D materials (e.g., graphene, hexagonal boron nitride, and transition metal dichalcogenides) have already been studied extensively, the focus here is on polymorphism in post-dichalcogenide 2D materials including group III, IV, and V elemental 2D materials, layered group III, IV, and V metal chalcogenides, and 2D transition metal halides. In addition to providing a comprehensive survey of recent experimental and theoretical literature, this Review identifies the most promising opportunities for future research including how 2D polymorph engineering can provide a pathway to materials by design.
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Affiliation(s)
- Hadallia Bergeron
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Dmitry Lebedev
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Mark C Hersam
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States.,Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States.,Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208, United States
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20
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Rashid R, Ling FCC, Wang SP, Xiao K, Cui X, Chan TH, Ong HC, Azeem W, Younas M. Shape-control growth of 2D-In 2Se 3 with out-of-plane ferroelectricity by chemical vapor deposition. NANOSCALE 2020; 12:20189-20201. [PMID: 32677627 DOI: 10.1039/c9nr10207h] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
For potential applications in ferroelectric switching and piezoelectric nano-generator devices, the promising ferroelectric properties of two dimensional (2D) layered In2Se3 attracted much attention. In the present study, 2D In2Se3 flakes down to monolayers are grown by the chemical vapor deposition (CVD) technique on a mica substrate with their structural, optical and ferroelectric properties being studied. The effect of growth parameters (time of growth and Ar flow rate) on the shape and size of the deposited flakes was studied. The optical microscopy study revealed that the flake changed from a circular shape to a sharp face triangle as the Ar flow rate and growth time increased. Raman spectroscopy and high-resolution scanning transmission electron microscopy (HR-STEM) studies revealed that the flakes were of α and β phases, each of which has a hexagonal crystal structure. Strong second harmonic generation (SHG) was observed from α-In2Se3, demonstrating its non-centrosymmetric structure. The piezo-force microscopic (PFM) study showed the presence of out of plane (OOP) ferroelectricity with no in plane (IP) ferroelectricity in CVD grown α-In2Se3 indicating its vertically confined piezoresponse, which was tuned by the applied electric bias and the flake thickness. The present result of shape-controlled growth of In2Se3 with OOP ferroelectricity would open new pathways in the field of 2D ferroelectric switching devices.
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Affiliation(s)
- Rashad Rashid
- Department of Physics, The University of Hong Kong, Pokfulam Road, China. and National Institute of Lasers and Optronics (NILOP), Islamabad, Pakistan
| | | | - Shuang-Peng Wang
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macao S.A.R. 999078, China
| | - Ke Xiao
- Department of Physics, The University of Hong Kong, Pokfulam Road, China.
| | - Xiaodong Cui
- Department of Physics, The University of Hong Kong, Pokfulam Road, China.
| | - T H Chan
- Department of Physics, The Chinese University of Hong Kong, Sha Tin, Hong Kong
| | - H C Ong
- Department of Physics, The Chinese University of Hong Kong, Sha Tin, Hong Kong
| | - Waqar Azeem
- Department of Physics, The University of Hong Kong, Pokfulam Road, China.
| | - Muhammad Younas
- PCG, Physics Division, PINSTECH, P.O. Nilore, Islamabad 45650, Pakistan
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21
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Kou Y, Chen L, Mu J, Miao H, Wang Y, Hu X, Teng F. Catalyst-free growth of dense γ-In 2Se 3 nanosheet arrays and their application in photoelectric detectors. NANOTECHNOLOGY 2020; 31:195601. [PMID: 31899909 DOI: 10.1088/1361-6528/ab674a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
In this work, a dense γ-In2Se3 nanosheet array has been fabricated using the chemical vapor deposition method under atmospheric pressure. Compared with crystal silicon, the photodetector based on the γ-In2Se3/p-Si heterojunction exhibits a high responsivity (96.7 mA W-1) at the near-infrared region, a presentable current on/off ratio (∼1000) and excellent detectivity (2.03 × 1012 jones). Simultaneously, the obtained photodetector demonstrated a fast response speed (0.15 ms/0.5 ms) and a broadband sensitive wavelength from ultraviolet (340 nm) to near-infrared (1020 nm). The photoelectric experimental data of the device shows that its high performance is attributed to the high-light absorption capacity of the material, the rational energy band structures of γ-In2Se3 and p-Si, and the effective separation of photo-generated carriers caused by the formed type-II heterojunction. Our work provides the primary experimental basis for the photodetection application of the γ-In2Se3 nanostructure.
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Affiliation(s)
- Yumeng Kou
- School of Physics, Northwest University, Xi'an 710069, People's Republic of China
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22
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Chi Y, Sun ZD, Xu QT, Xue HG, Guo SP. Hexagonal In 2Se 3: A Defect Wurtzite-Type Infrared Nonlinear Optical Material with Moderate Birefringence Contributed by Unique InSe 5 Unit. ACS APPLIED MATERIALS & INTERFACES 2020; 12:17699-17705. [PMID: 32223191 DOI: 10.1021/acsami.9b23085] [Citation(s) in RCA: 24] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The balance between second harmonic generation (SHG) intensity and laser-induced damage threshold (LIDT), together with phase-matchable behavior, is the key point for exploration of novel nonlinear optical (NLO) materials. In this work, the NLO property of defect wurtzite-type hexagonal-In2Se3 (γ) is extensively explored first. It exhibits a strong SHG intensity of 2.6 × AgGaS2 (AGS) at 2.1 μm, and a high powder LIDT of 7.3 × AGS. From wurtzite to γ-In2Se3, the birefringence changes from 0.003 to 0.075, resulting in the phase-matchable phenomenon of γ-In2Se3. This is well ascribed to the contribution of the unique InSe5 unit in γ-In2Se3 from the result of birefringence calculation and analysis.
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Affiliation(s)
- Yang Chi
- School of Chemistry & Chemical Engineering, Yangzhou University, Yangzhou, Jiangsu 225002, P. R. China
| | - Zong-Dong Sun
- School of Chemistry & Chemical Engineering, Yangzhou University, Yangzhou, Jiangsu 225002, P. R. China
| | - Qian-Ting Xu
- School of Chemistry & Chemical Engineering, Yangzhou University, Yangzhou, Jiangsu 225002, P. R. China
| | - Huai-Guo Xue
- School of Chemistry & Chemical Engineering, Yangzhou University, Yangzhou, Jiangsu 225002, P. R. China
| | - Sheng-Ping Guo
- School of Chemistry & Chemical Engineering, Yangzhou University, Yangzhou, Jiangsu 225002, P. R. China
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23
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Zou Z, Li D, Liang J, Zhang X, Liu H, Zhu C, Yang X, Li L, Zheng B, Sun X, Zeng Z, Yi J, Zhuang X, Wang X, Pan A. Epitaxial synthesis of ultrathin β-In 2Se 3/MoS 2 heterostructures with high visible/near-infrared photoresponse. NANOSCALE 2020; 12:6480-6488. [PMID: 32154546 DOI: 10.1039/c9nr10387b] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
van der Waals (vdWs) heterostructures, combining different two-dimensional (2D) layered materials with diverse properties, have been demonstrated to be a very promising platform to explore a new physical phenomenon and realize various potential applications in atomically thin electronic and optoelectronic devices. Here, we report the controlled growth of vertically stacked β-In2Se3/MoS2 vdWs heterostructures (despite the existence of large lattice mismatching ∼29%) through a typical two-step chemical vapor deposition (CVD) method. The crystal structure of the achieved heterostructures is characterized by transmission electron microscopy, where evident Moiré patterns are observed, indicating well-aligned lattice orientation. Strong photoluminescence quenching is obeserved in the heterostructure, revealing effective interlayer charge transfer at the interface. Electrical devices are further constructed based on the achieved heterostructures, which have a high on/off ratio and a typical rectifying behavior. Upon laser irradiation, the devices show excellent photosensing properties. A high responsivity of 4.47 A W-1 and a detectivity of 1.07 × 109 Jones are obtained under 450 nm laser illumination with a bias voltage of 1 V, which are much better than those of heterostructures grown via CVD. Most significantly, the detection range can be extended to near-infrared due to the relatively small bandgap nature of β-In2Se3. With 830 nm laser illumination, the devices also show distinct photoresponses with fast response speed even when operating at room temperature. The high-quality β-In2Se3/MoS2 heterostructures broaden the family of the 2D layered heterostructure system and should have significant potential applications in high-performance broadband photodetectors.
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Affiliation(s)
- Zixing Zou
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P. R. China.
| | - Dong Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P. R. China.
| | - Junwu Liang
- School Physics and Telecommunication Engineering, Yulin Normal University, Yulin, Guangxi 537000, P. R. China
| | - Xuehong Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P. R. China.
| | - Huawei Liu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P. R. China.
| | - Chenguang Zhu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P. R. China.
| | - Xin Yang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P. R. China.
| | - Lihui Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P. R. China.
| | - Biyuan Zheng
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P. R. China.
| | - Xingxia Sun
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P. R. China.
| | - Zhouxiaosong Zeng
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P. R. China.
| | - Jiali Yi
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P. R. China.
| | - Xiujuan Zhuang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P. R. China.
| | - Xiao Wang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P. R. China.
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P. R. China.
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24
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Zhou B, Gong SJ, Jiang K, Xu L, Zhu L, Shang L, Li Y, Hu Z, Chu J. Ferroelectric and dipole control of band alignment in the two dimensional InTe/In 2Se 3 heterostructure. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:055703. [PMID: 31610532 DOI: 10.1088/1361-648x/ab4d60] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Two dimensional (2D) ferroelectric materials are gaining growing attention due to their nontrival ferroelectricity, and the 2D ferroelectric heterostructures with tunable electronic, optoelectronic, or even magnetic properties, show many novel properties that do not exist in their constituents. In this work, by using the first-principles calculations, we investigate the ferroelectric and dipole control of electronic structures of the 2D ferroelectric heterostructure InTe/In2Se3. It is found that band alignment is closely dependent on the ferroelectric polarization of In2Se3. By switching the polarization of In2Se3, the band alignment of InTe/In2Se3 switches from a staggered (type II) to a straddling type (type I), and the band gap changes from indirect gap 0.76 eV to direct gap 0.15 eV. When the ferroelectric field of In2Se3 is reversed, the band alignment of InTe/In2Se3 switches from type-I to type-II, and the band gap changes from indirect gap 0.76 eV to direct gap 0.15 eV. In addition, we find that the interlayer dipole can also effectively modulate the band structure and induce the type-I to type-II band alignment transition. Our present results indicate that the 2D ferroelectric heterostructure with the tunable band alignment and band gap can be of great significance in the optoelectronic devices.
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Affiliation(s)
- Bin Zhou
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
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25
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Hao S, Yan S, Wang Y, Xu T, Zhang H, Cong X, Li L, Liu X, Cao T, Gao A, Zhang L, Jia L, Long M, Hu W, Wang X, Tan P, Sun L, Cui X, Liang SJ, Miao F. Edge-Epitaxial Growth of InSe Nanowires toward High-Performance Photodetectors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e1905902. [PMID: 31867892 DOI: 10.1002/smll.201905902] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/15/2019] [Revised: 11/24/2019] [Indexed: 06/10/2023]
Abstract
Semiconducting nanowires offer many opportunities for electronic and optoelectronic device applications due to their unique geometries and physical properties. However, it is challenging to synthesize semiconducting nanowires directly on a SiO2 /Si substrate due to lattice mismatch. Here, a catalysis-free approach is developed to achieve direct synthesis of long and straight InSe nanowires on SiO2 /Si substrates through edge-homoepitaxial growth. Parallel InSe nanowires are achieved further on SiO2 /Si substrates through controlling growth conditions. The underlying growth mechanism is attributed to a selenium self-driven vapor-liquid-solid process, which is distinct from the conventional metal-catalytic vapor-liquid-solid method widely used for growing Si and III-V nanowires. Furthermore, it is demonstrated that the as-grown InSe nanowire-based visible light photodetector simultaneously possesses an extraordinary photoresponsivity of 271 A W-1 , ultrahigh detectivity of 1.57 × 1014 Jones, and a fast response speed of microsecond scale. The excellent performance of the photodetector indicates that as-grown InSe nanowires are promising in future optoelectronic applications. More importantly, the proposed edge-homoepitaxial approach may open up a novel avenue for direct synthesis of semiconducting nanowire arrays on SiO2 /Si substrates.
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Affiliation(s)
- Song Hao
- National Laboratory of Solid-State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Shengnan Yan
- National Laboratory of Solid-State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Yang Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Tao Xu
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing, 210096, China
| | - Hui Zhang
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing, 210096, China
| | - Xin Cong
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, College of Materials Science and Opto-Electronic Technology, Chinese Academy of Sciences, Beijing, 100083, China
| | - Lingfei Li
- School of Electronic Science and Technology, Nanjing University, Nanjing, 210093, China
| | - Xiaowei Liu
- National Laboratory of Solid-State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Tianjun Cao
- National Laboratory of Solid-State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Anyuan Gao
- National Laboratory of Solid-State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Lili Zhang
- National Laboratory of Solid-State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Lanxin Jia
- National Laboratory of Solid-State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Mingsheng Long
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Xiaomu Wang
- School of Electronic Science and Technology, Nanjing University, Nanjing, 210093, China
| | - Pingheng Tan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, College of Materials Science and Opto-Electronic Technology, Chinese Academy of Sciences, Beijing, 100083, China
| | - Litao Sun
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing, 210096, China
| | - Xinyi Cui
- State Key Laboratory of Pollution Control and Resource Reuse, School of the Environment, Nanjing University, Nanjing, 210046, China
| | - Shi-Jun Liang
- National Laboratory of Solid-State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Feng Miao
- National Laboratory of Solid-State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
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26
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Li W, Dai M, Hu Y, Chen H, Zhu X, Yang Q, Hu P. Synchronous Enhancement for Responsivity and Response Speed in In 2Se 3 Photodetector Modulated by Piezoresistive Effect. ACS APPLIED MATERIALS & INTERFACES 2019; 11:47098-47105. [PMID: 31738040 DOI: 10.1021/acsami.9b17448] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
Although single ultra-high-performance indicators have been achieved based on two-dimensional (2D) semiconductors, the comprehensive performances of the photodetectors of them are not so desirable. The response speed and responsivity are two key figures of merit for photodetectors, while these two parameters are always mutually suppressive and can not be synchronously satisfied. Here, we proposed a feasible strategy that can simultaneously improve the responsivity and response speed of In2Se3-based photodetectors by applying the mechanical strain and producing the piezoresistive effect, which can synergistically modulate the band structure and boost the overall photodetecting performances. Through studying the optoelectronic properties of In2Se3 photodetector under strain modulations, we found that the responsivity under 0.65% tensile strain is improved by almost 68.6% on average, while responsivity under 0.65% compressive strain is lowered by about 57.3% in the wavelength range of 200-1000 nm. More importantly, the response speed of the In2Se3-based photodetector under two different mechanical strains rises distinctly (from 244 to 214 and 180 μs, accordingly). The strain-engineering can accommodate the band structure and enhance the electric and optical properties of the semiconducting crystals, ultimately realizing high-performance photodetectors. The strategy proposed in this work for improving the performance of photodetectors provides a promising route to practical applications in next-generation optoelectronic devices.
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27
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Shifa TA, Wang F, Liu Y, He J. Heterostructures Based on 2D Materials: A Versatile Platform for Efficient Catalysis. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1804828. [PMID: 30378188 DOI: 10.1002/adma.201804828] [Citation(s) in RCA: 63] [Impact Index Per Article: 12.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/27/2018] [Revised: 08/21/2018] [Indexed: 05/06/2023]
Abstract
The unique structural and electronic properties of 2D materials, including the metal and metal-free ones, have prompted intense exploration in the search for new catalysts. The construction of different heterostructures based on 2D materials offers great opportunities for boosting the catalytic activity in electo(photo)chemical reactions. Particularly, the merits resulting from the synergism of the constituent components and the fascinating properties at the interface are tremendously interesting. This scenario has now become the state-of-the-art point in the development of active catalysts for assisting energy conversion reactions including water splitting and CO2 reduction. Here, starting from the theoretical background of the fundamental concepts, the progressive developments in the design and applications of heterostructures based on 2D materials are traced. Furthermore, a personal perspective on the exploration of 2D heterostructures for further potential application in catalysis is offered.
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Affiliation(s)
- Tofik Ahmed Shifa
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Fengmei Wang
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Yang Liu
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Jun He
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
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28
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Zhao S, Wang L, Fu L. Precise Vapor-Phase Synthesis of Two-Dimensional Atomic Single Crystals. iScience 2019; 20:527-545. [PMID: 31655063 PMCID: PMC6818371 DOI: 10.1016/j.isci.2019.09.038] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/05/2019] [Revised: 09/19/2019] [Accepted: 09/24/2019] [Indexed: 02/06/2023] Open
Abstract
Two-dimensional atomic single crystals (2DASCs) have drawn immense attention because of their potential for fundamental research and new technologies. Novel properties of 2DASCs are closely related to their atomic structures, and effective modulation of the structures allows for exploring various practical applications. Precise vapor-phase synthesis of 2DASCs with tunable thickness, selectable phase, and controllable chemical composition can be realized to adjust their band structures and electronic properties. This review highlights the latest advances in the precise vapor-phase synthesis of 2DASCs. We thoroughly elaborate on strategies toward the accurate control of layer number, phase, chemical composition of layered 2DASCs, and thickness of non-layered 2DASCs. Finally, we suggest forward-looking solutions to the challenges and directions of future developments in this emerging field.
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Affiliation(s)
- Shasha Zhao
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, China
| | - Luyang Wang
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, China
| | - Lei Fu
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, China.
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29
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Ryu YK, Frisenda R, Castellanos-Gomez A. Superlattices based on van der Waals 2D materials. Chem Commun (Camb) 2019; 55:11498-11510. [PMID: 31483427 DOI: 10.1039/c9cc04919c] [Citation(s) in RCA: 32] [Impact Index Per Article: 6.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/26/2022]
Abstract
Two-dimensional (2D) materials exhibit a number of improved mechanical, optical, and electronic properties compared to their bulk counterparts. The absence of dangling bonds in the cleaved surfaces of these materials allows combining different 2D materials into van der Waals heterostructures to fabricate p-n junctions, photodetectors, and 2D-2D ohmic contacts that show unexpected performances. These intriguing results are regularly summarized in comprehensive reviews. A strategy to tailor their properties even further and to observe novel quantum phenomena consists in the fabrication of superlattices whose unit cell is formed either by two dissimilar 2D materials or by a 2D material subjected to a periodic perturbation, each component contributing with different characteristics. Furthermore, in a 2D material-based superlattice, the interlayer interaction between the layers mediated by van der Waals forces constitutes a key parameter to tune the global properties of the superlattice. The above-mentioned factors reflect the potential to devise countless combinations of van der Waals 2D material-based superlattices. In the present feature article, we explain in detail the state-of-the-art of 2D material-based superlattices and describe the different methods to fabricate them, classified as vertical stacking, intercalation with atoms or molecules, moiré patterning, strain engineering and lithographic design. We also aim to highlight some of the specific applications of each type of superlattices.
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Affiliation(s)
- Yu Kyoung Ryu
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Madrid, E-28049, Spain.
| | - Riccardo Frisenda
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Madrid, E-28049, Spain.
| | - Andres Castellanos-Gomez
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Madrid, E-28049, Spain.
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30
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Apte A, Krishnamoorthy A, Hachtel JA, Susarla S, Yoon J, Sassi LM, Bharadwaj P, Tour JM, Idrobo JC, Kalia RK, Nakano A, Vashishta P, Tiwary CS, Ajayan PM. Two-Dimensional Lateral Epitaxy of 2H (MoSe 2)-1T' (ReSe 2) Phases. NANO LETTERS 2019; 19:6338-6345. [PMID: 31356089 DOI: 10.1021/acs.nanolett.9b02476] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Two-dimensional (2D) transition metal dichalcogenide (TMDC) heterostructures have been proposed as potential candidates for a variety of applications like quantum computing, neuromorphic computing, solar cells, and flexible field effective transistors. The 2D TMDC heterostructures at the present stage face difficulties being implemented in these applications because of lack of large and sharp heterostructure interfaces. Herein, we address this problem via a CVD technique to grow thermodynamically stable heterostructure of 2H/1T' MoSe2-ReSe2 using conventional transition metal phase diagrams as a reference. We demonstrate how the thermodynamics of mixing in the MoReSe2 system during CVD growth dictates the formation of atomically sharp interfaces between MoSe2 and ReSe2, which can be confirmed by high-resolution scanning transmission electron microscopy imaging, revealing zigzag selenium-terminated interface between the epitaxial 2H and 1T' lattices. Our work provides useful insights for understanding the stability of 2D heterostructures and interfaces between chemically, structurally, and electronically different phases.
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Affiliation(s)
- Amey Apte
- Department of Materials Science and NanoEngineering , Rice University , 6100 Main Street , Houston , Texas 77005 , United States
| | - Aravind Krishnamoorthy
- Collaboratory for Advanced Computing and Simulations, Department of Physics and Astronomy, Department of Computer Science, Department of Chemical Engineering and Materials Science, Department of Biological Sciences , University of Southern California , Los Angeles , California 90007 , United States
| | - Jordan A Hachtel
- Center for Nanophase Materials Sciences , Oak Ridge National Laboratory , Oak Ridge , Tennessee 37831 , United States
| | - Sandhya Susarla
- Department of Materials Science and NanoEngineering , Rice University , 6100 Main Street , Houston , Texas 77005 , United States
| | - Jongwon Yoon
- Department of Chemistry , Rice University , 6100 Main Street , Houston Texas 77005 , United States
| | - Lucas M Sassi
- Department of Materials Science and NanoEngineering , Rice University , 6100 Main Street , Houston , Texas 77005 , United States
| | - Palash Bharadwaj
- Department of Electrical and Computer Engineering , Rice University , 6100 Main Street , Houston , Texas 77005 , United States
| | - James M Tour
- Department of Materials Science and NanoEngineering , Rice University , 6100 Main Street , Houston , Texas 77005 , United States
- Department of Chemistry , Rice University , 6100 Main Street , Houston Texas 77005 , United States
| | - Juan Carlos Idrobo
- Center for Nanophase Materials Sciences , Oak Ridge National Laboratory , Oak Ridge , Tennessee 37831 , United States
| | - Rajiv K Kalia
- Collaboratory for Advanced Computing and Simulations, Department of Physics and Astronomy, Department of Computer Science, Department of Chemical Engineering and Materials Science, Department of Biological Sciences , University of Southern California , Los Angeles , California 90007 , United States
| | - Aiichiro Nakano
- Collaboratory for Advanced Computing and Simulations, Department of Physics and Astronomy, Department of Computer Science, Department of Chemical Engineering and Materials Science, Department of Biological Sciences , University of Southern California , Los Angeles , California 90007 , United States
| | - Priya Vashishta
- Collaboratory for Advanced Computing and Simulations, Department of Physics and Astronomy, Department of Computer Science, Department of Chemical Engineering and Materials Science, Department of Biological Sciences , University of Southern California , Los Angeles , California 90007 , United States
| | - Chandra Sekhar Tiwary
- Department of Materials Science and NanoEngineering , Rice University , 6100 Main Street , Houston , Texas 77005 , United States
| | - Pulickel M Ajayan
- Department of Materials Science and NanoEngineering , Rice University , 6100 Main Street , Houston , Texas 77005 , United States
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31
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Zhang F, Wang Z, Dong J, Nie A, Xiang J, Zhu W, Liu Z, Tao C. Atomic-Scale Observation of Reversible Thermally Driven Phase Transformation in 2D In 2Se 3. ACS NANO 2019; 13:8004-8011. [PMID: 31241301 DOI: 10.1021/acsnano.9b02764] [Citation(s) in RCA: 24] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Phase transformation in emerging two-dimensional (2D) materials is crucial for understanding and controlling the interplay between structure and electronic properties. In this work, we investigate 2D In2Se3 synthesized via chemical vapor deposition, a recently discovered 2D ferroelectric material. We observed that In2Se3 layers with thickness ranging from a single layer to ∼20 layers stabilized at the β phase with a superstructure at room temperature. At around 180 K, the β phase converted to a more stable β' phase that was distinct from previously reported phases in 2D In2Se3. The kinetics of the reversible thermally driven β-to-β' phase transformation was investigated by temperature-dependent transmission electron microscopy and Raman spectroscopy, corroborated with the expected minimum-energy pathways obtained from our first-principles calculations. Furthermore, density functional theory calculations reveal in-plane ferroelectricity in the β' phase. Scanning tunneling spectroscopy measurements show that the indirect bandgap of monolayer β' In2Se3 is 2.50 eV, which is larger than that of the multilayer form with a measured value of 2.05 eV. Our results on the reversible thermally driven phase transformation in 2D In2Se3 with thickness down to the monolayer limit and the associated electronic properties will provide insights to tune the functionalities of 2D In2Se3 and other emerging 2D ferroelectric materials and shed light on their numerous potential applications (e.g., nonvolatile memory devices).
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Affiliation(s)
- Fan Zhang
- Department of Physics , Virginia Tech , Blacksburg , Virginia 24061 , United States
| | - Zhe Wang
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at the Microscale, Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, School of Physical Sciences, and Synergetic Innovation Center of Quantum Information and Quantum Physics , University of Science and Technology of China , Hefei , Anhui 230026 , China
| | - Jiyu Dong
- Center for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology , Yanshan University , Qinghuangdao 066004 , China
| | - Anmin Nie
- Center for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology , Yanshan University , Qinghuangdao 066004 , China
| | - Jianyong Xiang
- Center for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology , Yanshan University , Qinghuangdao 066004 , China
| | - Wenguang Zhu
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at the Microscale, Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, School of Physical Sciences, and Synergetic Innovation Center of Quantum Information and Quantum Physics , University of Science and Technology of China , Hefei , Anhui 230026 , China
| | - Zhongyuan Liu
- Center for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology , Yanshan University , Qinghuangdao 066004 , China
| | - Chenggang Tao
- Department of Physics , Virginia Tech , Blacksburg , Virginia 24061 , United States
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32
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Li XZ, Wang YF, Xia J, Meng XM. Growth of vertical heterostructures based on orthorhombic SnSe/hexagonal In 2Se 3 for high-performance photodetectors. NANOSCALE ADVANCES 2019; 1:2606-2611. [PMID: 36132733 PMCID: PMC9419546 DOI: 10.1039/c9na00120d] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/25/2019] [Accepted: 05/13/2019] [Indexed: 06/13/2023]
Abstract
Vertical heterostructures based on two-dimensional (2D) layered materials are ideal platforms for electronic structure engineering and novel device applications. However, most of the current heterostructures focus on layered crystals with a similar lattice. In addition, the heterostructures made by 2D materials with different structures are rarely investigated. In this study, we successfully fabricated vertical heterostructures by combining orthorhombic SnSe/hexagonal In2Se3 vertical heterostructures using a two-step physical vapor deposition (PVD) method. Structural characterization reveals that the heterostructures are formed of vertically stacked SnSe on the top of the In2Se3 film, and vertical heterostructures possess high quality, where In2Se3 exposed surface is the (0001) plane and SnSe prefers growing along the [100] direction. Raman maps confirm the precise spatial modulation of the as-grown SnSe/In2Se3 heterostructures. In addition, high-performance photodetectors based on the vertical heterostructures were fabricated directly on the substrate, which showed a broadband response, reversibility and stability. Compared with the dark current, the device demonstrated one order magnification of photocurrent, about 186 nA, under 405 nm laser illumination and power of 1.5 mW. Moreover, the device shows an obvious increase in the photocurrent intensity with the changing incident laser power, where I ph ∝ P 0.7. Also, the device demonstrated a high responsivity of up to 350 mA W-1 and a fast response time of about 139 ms. This study broadens the horizon for the synthesis and application of vertical heterostructures based on 2D layered materials with different structures and further develops exciting technologies beyond the reach of the existing materials.
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Affiliation(s)
- Xuan-Ze Li
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences Beijing 100190 P. R. China
- Centre of Material Science and Optoelectronic Engineering, University of Chinese Academy of Science Beijing 10049 P. R. China
| | - Yi-Fan Wang
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences Beijing 100190 P. R. China
- Centre of Material Science and Optoelectronic Engineering, University of Chinese Academy of Science Beijing 10049 P. R. China
| | - Jing Xia
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences Beijing 100190 P. R. China
| | - Xiang-Min Meng
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences Beijing 100190 P. R. China
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33
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Feng W, Qin F, Yu M, Gao F, Dai M, Hu Y, Wang L, Hou J, Li B, Hu P. Synthesis of Superlattice InSe Nanosheets with Enhanced Electronic and Optoelectronic Performance. ACS APPLIED MATERIALS & INTERFACES 2019; 11:18511-18516. [PMID: 31059223 DOI: 10.1021/acsami.9b01747] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Multilayer InSe has emerged as a promising candidate for applications in novel electronic and optoelectronic devices due to its direct bandgap, high electron mobility, and excellent photoresponse with a broad response range. Here, we report synthesis of superlattice InSe nanosheets by simple thermal annealing for the first time. The mobility is increased to 299.1 cm2 V-1 s-1 for superlattice InSe FETs and is 4 times higher than 63.5 cm2 V-1 s-1 of pristine InSe device. The superlattice InSe photodetector shows an ultrahigh responsivity of 1.7 × 104 A/W (700 nm), which is 8.5 times greater than the pristine photodetector. Superlattice InSe photodetectors hold a good photoresponse stability and rapid response time of 20 ms. The electronic and photoresponse performance improvement of superlattice InSe is attributed to higher carrier sheet density and lower contact resistance for more effective electron injection and more photogenerated carrier injection, respectively. Those results suggest that superlattice is an effective method to further improve electronic and optoelectronic properties of two-dimensional InSe devices.
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Affiliation(s)
| | | | | | - Feng Gao
- Key Lab of Microsystem and Microstructure of Ministry of Education , Harbin Institute of Technology , Harbin , 150080 , China
| | - Mingjin Dai
- Key Lab of Microsystem and Microstructure of Ministry of Education , Harbin Institute of Technology , Harbin , 150080 , China
| | - Yunxia Hu
- Key Lab of Microsystem and Microstructure of Ministry of Education , Harbin Institute of Technology , Harbin , 150080 , China
| | - Lifeng Wang
- Institute for Frontier Materials , Deakin University , 75 Pigdons Road, Waurn Ponds , Geelong , Victoria 3216 , Australia
| | | | | | - PingAn Hu
- Key Lab of Microsystem and Microstructure of Ministry of Education , Harbin Institute of Technology , Harbin , 150080 , China
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34
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Xiao Y, Zhou M, Zeng M, Fu L. Atomic-Scale Structural Modification of 2D Materials. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2019; 6:1801501. [PMID: 30886793 PMCID: PMC6402411 DOI: 10.1002/advs.201801501] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/03/2018] [Revised: 10/20/2018] [Indexed: 05/02/2023]
Abstract
2D materials have attracted much attention since the discovery of graphene in 2004. Due to their unique electrical, optical, and magnetic properties, they have potential for various applications such as electronics and optoelectronics. Owing to thermal motion and lattice growth kinetics, different atomic-scale structures (ASSs) can originate from natural or intentional regulation of 2D material atomic configurations. The transformations of ASSs can result in the variation of the charge density, electronic density of state and lattice symmetry so that the property tuning of 2D materials can be achieved and the functional devices can be constructed. Here, several kinds of ASSs of 2D materials are introduced, including grain boundaries, atomic defects, edge structures, and stacking arrangements. The design strategies of these structures are also summarized, especially for atomic defects and edge structures. Moreover, toward multifunctional integration of applications, the modulation of electrical, optical, and magnetic properties based on atomic-scale structural modification are presented. Finally, challenges and outlooks are featured in the aspects of controllable structure design and accurate property tuning for 2D materials with ASSs. This work may promote research on the atomic-scale structural modification of 2D materials toward functional applications.
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Affiliation(s)
- Yao Xiao
- The Institute for Advanced Studies (IAS)Wuhan UniversityWuhan430072P. R. China
| | - Mengyue Zhou
- College of Chemistry and Molecular SciencesWuhan UniversityWuhan430072P. R. China
| | - Mengqi Zeng
- College of Chemistry and Molecular SciencesWuhan UniversityWuhan430072P. R. China
| | - Lei Fu
- The Institute for Advanced Studies (IAS)Wuhan UniversityWuhan430072P. R. China
- College of Chemistry and Molecular SciencesWuhan UniversityWuhan430072P. R. China
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35
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Liu J, Zhou Y, Lin Y, Li M, Cai H, Liang Y, Liu M, Huang Z, Lai F, Huang F, Zheng W. Anisotropic Photoresponse of the Ultrathin GeSe Nanoplates Grown by Rapid Physical Vapor Deposition. ACS APPLIED MATERIALS & INTERFACES 2019; 11:4123-4130. [PMID: 30615837 DOI: 10.1021/acsami.8b19306] [Citation(s) in RCA: 16] [Impact Index Per Article: 3.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Anisotropic materials, especially two-dimensional (2D) layered materials formed by van der Waals force (vdW) with low-symmetry, have become a scientific hot-spot because their electrical, optical, and thermoelectric properties are highly polarization dependent. The 2D GeSe, a typical anisotropic-layered orthorhombic structure and narrow bandgap (1.1-1.2 eV) semiconductor, potentially meets these demands. In this report, the ultrathin elongated hexagonal GeSe nanoplates were successfully synthesized by the rapid physical vapor deposition method developed here. The ultrathin elongated hexagonal GeSe nanoplates have a zigzag edge in the long edge and an armchair edge in the short edge. In addition, the typical Raman mode exhibited 90° periodic vibration, having its maximum intensity between the zigzag direction or the zigzag and armchair direction, indicating an anisotropic electron-phonon interaction. Furthermore, the field effect transistor devices based on the elongated hexagonal GeSe nanoplates were constructed and exhibited the p-type semiconducting behavior with a high photoresponse characteriscs. Finally, the polarized sensitive photocurrent was identified, further revealing the intrinsically anisotropy of the GeSe nanoplate. The results illustrated here may give a useful guidance to synthesize the 2D-layered anisotropic nanomaterials and further advance the development of the polarized photodetector.
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Affiliation(s)
- Jinyang Liu
- College of Physics and Energy , Fujian Normal University , Fuzhou , 350117 , P.R. China
- Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials , Fuzhou 350117 , P.R. China
- Fujian Provincial Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices , Xiamen , 361005 , P.R. China
- Fujian Provincial Engineering Technology Research Center of Solar Energy Conversion and Energy Storage , Fuzhou , 350117 , China
| | - Yuhan Zhou
- College of Physics and Energy , Fujian Normal University , Fuzhou , 350117 , P.R. China
| | - Yue Lin
- Hefei National Laboratory for Physical Science at the Microscale , University of Science and Technology of China , Hefei , Anhui 230026 , P.R. China
| | - Mingling Li
- Hefei National Laboratory for Physical Science at the Microscale , University of Science and Technology of China , Hefei , Anhui 230026 , P.R. China
| | - Hongbing Cai
- Hefei National Laboratory for Physical Science at the Microscale , University of Science and Technology of China , Hefei , Anhui 230026 , P.R. China
| | - Yichun Liang
- College of Physics and Energy , Fujian Normal University , Fuzhou , 350117 , P.R. China
| | - Mengyu Liu
- College of Physics and Energy , Fujian Normal University , Fuzhou , 350117 , P.R. China
| | - Zhigao Huang
- College of Physics and Energy , Fujian Normal University , Fuzhou , 350117 , P.R. China
- Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials , Fuzhou 350117 , P.R. China
- Fujian Provincial Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices , Xiamen , 361005 , P.R. China
- Fujian Provincial Engineering Technology Research Center of Solar Energy Conversion and Energy Storage , Fuzhou , 350117 , China
| | - Fachun Lai
- College of Physics and Energy , Fujian Normal University , Fuzhou , 350117 , P.R. China
- Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials , Fuzhou 350117 , P.R. China
- Fujian Provincial Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices , Xiamen , 361005 , P.R. China
- Fujian Provincial Engineering Technology Research Center of Solar Energy Conversion and Energy Storage , Fuzhou , 350117 , China
| | - Feng Huang
- College of Physics and Energy , Fujian Normal University , Fuzhou , 350117 , P.R. China
- Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials , Fuzhou 350117 , P.R. China
- Fujian Provincial Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices , Xiamen , 361005 , P.R. China
- Fujian Provincial Engineering Technology Research Center of Solar Energy Conversion and Energy Storage , Fuzhou , 350117 , China
| | - Weifeng Zheng
- College of Physics and Energy , Fujian Normal University , Fuzhou , 350117 , P.R. China
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36
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Tang L, Teng C, Luo Y, Khan U, Pan H, Cai Z, Zhao Y, Liu B, Cheng HM. Confined van der Waals Epitaxial Growth of Two-Dimensional Large Single-Crystal In 2Se 3 for Flexible Broadband Photodetectors. RESEARCH (WASHINGTON, D.C.) 2019; 2019:2763704. [PMID: 31549054 PMCID: PMC6750059 DOI: 10.34133/2019/2763704] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/10/2018] [Accepted: 01/18/2019] [Indexed: 11/06/2022]
Abstract
The controllable growth of two-dimensional (2D) semiconductors with large domain sizes and high quality is much needed in order to reduce the detrimental effect of grain boundaries on device performance but has proven to be challenging. Here, we analyze the precursor concentration on the substrate surface which significantly influences nucleation density in a vapor deposition growth process and design a confined micro-reactor to grow 2D In2Se3 with large domain sizes and high quality. The uniqueness of this confined micro-reactor is that its size is ~102-103 times smaller than that of a conventional reactor. Such a remarkably small reactor causes a very low precursor concentration on the substrate surface, which reduces nucleation density and leads to the growth of 2D In2Se3 grains with sizes larger than 200 μm. Our experimental results show large domain sizes of the 2D In2Se3 with high crystallinity. The flexible broadband photodetectors based on the as-grown In2Se3 show rise and decay times of 140 ms and 25 ms, efficient response (5.6 A/W), excellent detectivity (7×1010 Jones), high external quantum efficiency (251%), good flexibility, and high stability. This study, in principle, provides an effective strategy for the controllable growth of high quality 2D materials with few grain boundaries.
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Affiliation(s)
- Lei Tang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen 518055, China
| | - Changjiu Teng
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen 518055, China
| | - Yuting Luo
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen 518055, China
| | - Usman Khan
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen 518055, China
| | - Haiyang Pan
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Zhengyang Cai
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen 518055, China
| | - Yue Zhao
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
- Shenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen 518055, China
| | - Bilu Liu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen 518055, China
| | - Hui-Ming Cheng
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen 518055, China
- Shenyang National Laboratory for Materials Sciences, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
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37
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Feng W, Gao F, Hu Y, Dai M, Li H, Wang L, Hu P. High-performance and flexible photodetectors based on chemical vapor deposition grown two-dimensional In 2Se 3 nanosheets. NANOTECHNOLOGY 2018; 29:445205. [PMID: 30136650 DOI: 10.1088/1361-6528/aadc73] [Citation(s) in RCA: 21] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Two-dimensional (2D) In2Se3 with unique optical and electrical properties has great potential in next generation optoelectronics and multilevel phase-change memories. Here, for the first time, we report high-performance rigid and flexible photodetectors based on chemical vapor deposition (CVD) grown 2D In2Se3. Both rigid and flexible 2D In2Se3 photodetectors show a broadband response range from ultraviolet (254 nm) to visible light (700 nm). High photoresponsivities of 578 and 363 A · W-1 are achieved using rigid and flexible 2D In2Se3 photodetectors, respectively, under 700 nm light illumination, which are higher than those of photodetectors based on mechanically exfoliated 2D In2Se3 and physical vapor deposition grown 2D In2Se3. Furthermore, flexible 2D In2Se3 photodetectors show good mechanical durability and photoresponse stability under repeated bending tests. A high and stable photoresponse provides an opportunity for CVD-grown 2D In2Se3 applications in flexible optoelectronic and photovoltaic devices.
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Affiliation(s)
- Wei Feng
- Department of Chemistry and Chemical Engineering, College of Science, Northeast Forestry University, Harbin, 150040, People's Republic of China
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38
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Poh SM, Tan SJR, Wang H, Song P, Abidi IH, Zhao X, Dan J, Chen J, Luo Z, Pennycook SJ, Castro Neto AH, Loh KP. Molecular-Beam Epitaxy of Two-Dimensional In 2Se 3 and Its Giant Electroresistance Switching in Ferroresistive Memory Junction. NANO LETTERS 2018; 18:6340-6346. [PMID: 30192558 DOI: 10.1021/acs.nanolett.8b02688] [Citation(s) in RCA: 62] [Impact Index Per Article: 10.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/17/2023]
Abstract
Ferroelectric thin film has attracted great interest for nonvolatile memory applications and can be used in either ferroelectric Schottky diodes or ferroelectric tunneling junctions due to its promise of fast switching speed, high on-to-off ratio, and nondestructive readout. Two-dimensional α-phase indium selenide (In2Se3), which has a modest band gap and robust ferroelectric properties stabilized by dipole locking, is an excellent candidate for multidirectional piezoelectric and switchable photodiode applications. However, the large-scale synthesis of this material is still elusive, and its performance as a ferroresistive memory junction is rarely reported. Here, we report the low-temperature molecular-beam epitaxy (MBE) of large-area monolayer α-In2Se3 on graphene and demonstrate the use of α-In2Se3 on graphene in ferroelectric Schottky diode junctions by employing high-work-function gold as the top electrode. The polarization-modulated Schottky barrier formed at the interface exhibits a giant electroresistance ratio of 3.9 × 106 with a readout current density of >12 A/cm2, which is more than 200% higher than the state-of-the-art technology. Our MBE growth method allows a high-quality ultrathin film of In2Se3 to be heteroepitaxially grown on graphene, thereby simplifying the fabrication of high-performance 2D ferroelectric junctions for ferroresistive memory applications.
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Affiliation(s)
- Sock Mui Poh
- NUS Graduate School for Integrative Sciences and Engineering , Centre for Life Sciences No. 05-01 , 28 Medical Drive , 117456 Singapore
- Department of Chemistry , National University of Singapore , Science Drive 3 , 117543 Singapore
| | - Sherman Jun Rong Tan
- NUS Graduate School for Integrative Sciences and Engineering , Centre for Life Sciences No. 05-01 , 28 Medical Drive , 117456 Singapore
- Department of Chemistry , National University of Singapore , Science Drive 3 , 117543 Singapore
| | - Han Wang
- Department of Materials Science and Engineering , National University of Singapore , 117575 Singapore
| | - Peng Song
- Department of Chemistry , National University of Singapore , Science Drive 3 , 117543 Singapore
- Centre for Advanced 2D Materials and Graphene Research Centre , National University of Singapore , 117546 Singapore
| | - Irfan H Abidi
- Department of Chemical and Biological Engineering , The Hong Kong University of Science and Technology , Clear Water Bay , Kowloon , Hong Kong
| | - Xiaoxu Zhao
- NUS Graduate School for Integrative Sciences and Engineering , Centre for Life Sciences No. 05-01 , 28 Medical Drive , 117456 Singapore
- Department of Chemistry , National University of Singapore , Science Drive 3 , 117543 Singapore
| | - Jiadong Dan
- NUS Graduate School for Integrative Sciences and Engineering , Centre for Life Sciences No. 05-01 , 28 Medical Drive , 117456 Singapore
- Department of Materials Science and Engineering , National University of Singapore , 117575 Singapore
| | - Jingsheng Chen
- Department of Materials Science and Engineering , National University of Singapore , 117575 Singapore
| | - Zhengtang Luo
- Department of Chemical and Biological Engineering , The Hong Kong University of Science and Technology , Clear Water Bay , Kowloon , Hong Kong
| | - Stephen J Pennycook
- NUS Graduate School for Integrative Sciences and Engineering , Centre for Life Sciences No. 05-01 , 28 Medical Drive , 117456 Singapore
- Department of Materials Science and Engineering , National University of Singapore , 117575 Singapore
- Centre for Advanced 2D Materials and Graphene Research Centre , National University of Singapore , 117546 Singapore
| | - Antonio H Castro Neto
- Centre for Advanced 2D Materials and Graphene Research Centre , National University of Singapore , 117546 Singapore
- Department of Physics , National University of Singapore , 3 Science Drive 2 , 117542 Singapore
| | - Kian Ping Loh
- Department of Chemistry , National University of Singapore , Science Drive 3 , 117543 Singapore
- Centre for Advanced 2D Materials and Graphene Research Centre , National University of Singapore , 117546 Singapore
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39
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Fu L, Hu D, Mendes RG, Rümmeli MH, Dai Q, Wu B, Fu L, Liu Y. Highly Organized Epitaxy of Dirac Semimetallic PtTe 2 Crystals with Extrahigh Conductivity and Visible Surface Plasmons at Edges. ACS NANO 2018; 12:9405-9411. [PMID: 30148950 DOI: 10.1021/acsnano.8b04540] [Citation(s) in RCA: 28] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Platinum telluride (PtTe2), a member of metallic noble-transition-metal dichalcogenides (MNTMDs), has emerged as an indispensable candidate for superconducting, magnetic, and other electronic phase engineering, as well as optic applications. Herein, we report the van der Waals epitaxy of high-crystalline few-layer PtTe2 crystals on inert mica. Density functional theory calculations are used to illustrate a type-II Dirac cone along the Γ-A direction in the PtTe2 crystal. Impressively, the PtTe2 devices exhibit an extra-high electrical conductivity of 107 S m-1, 1000 times higher than that of metallic 1T MoS2. Meanwhile, the magnetoresistance effect at low temperatures reaches 800% in a field of 9.0 T. Furthermore, near-field nanooptical properties are assessed on PtTe2. Considering the subwavelength effect, the plasmonic wavelength λp ≈ 200 nm of 1T PtTe2 is obtained and the carrier concentration calculated from λp is about 1.22 × 1015 cm-2, which is 100-fold higher than that of MoTe2 in the previous reports. Therefore, our work demonstrates the growth of MNTMDs and provides insights into the plasmonic properties of 2D metallic telluride compounds.
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Affiliation(s)
- Lei Fu
- College of Chemistry and Molecular Science , Wuhan University , Wuhan 430072 , People's Republic of China
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids , Institute of Chemistry, Chinese Academy of Sciences , Beijing 100190 , People's Republic of China
| | - Debo Hu
- National Center for Nanoscience and Technology , Beijing 100190 , People's Republic of China
| | - Rafael G Mendes
- Soochow Institute for Energy and Materials InnovationS (SIEMIS), School of Energy Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology , Soochow University , Suzhou 215006 , People's Republic of China
| | - Mark H Rümmeli
- Soochow Institute for Energy and Materials InnovationS (SIEMIS), School of Energy Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology , Soochow University , Suzhou 215006 , People's Republic of China
| | - Qing Dai
- National Center for Nanoscience and Technology , Beijing 100190 , People's Republic of China
| | - Bin Wu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids , Institute of Chemistry, Chinese Academy of Sciences , Beijing 100190 , People's Republic of China
| | - Lei Fu
- College of Chemistry and Molecular Science , Wuhan University , Wuhan 430072 , People's Republic of China
| | - Yunqi Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids , Institute of Chemistry, Chinese Academy of Sciences , Beijing 100190 , People's Republic of China
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40
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Huang W, Gan L, Li H, Ma Y, Zhai T. Phase‐Engineered Growth of Ultrathin InSe Flakes by Chemical Vapor Deposition for High‐Efficiency Second Harmonic Generation. Chemistry 2018; 24:15678-15684. [DOI: 10.1002/chem.201803634] [Citation(s) in RCA: 26] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/13/2018] [Revised: 07/16/2018] [Indexed: 11/10/2022]
Affiliation(s)
- Wenjuan Huang
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering Huazhong University of, Science and Technology (HUST) Wuhan 430074 P. R. China
| | - Lin Gan
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering Huazhong University of, Science and Technology (HUST) Wuhan 430074 P. R. China
| | - Huiqiao Li
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering Huazhong University of, Science and Technology (HUST) Wuhan 430074 P. R. China
| | - Ying Ma
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering Huazhong University of, Science and Technology (HUST) Wuhan 430074 P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering Huazhong University of, Science and Technology (HUST) Wuhan 430074 P. R. China
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41
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Ma Y, Ajayan PM, Yang S, Gong Y. Recent Advances in Synthesis and Applications of 2D Junctions. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2018; 14:e1801606. [PMID: 30073751 DOI: 10.1002/smll.201801606] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/27/2018] [Revised: 06/15/2018] [Indexed: 06/08/2023]
Abstract
Recent progress in the methods of integration of 2D materials is reviewed. Integrated 2D circuits are one of the most promising candidates for advanced electronics and flexible devices. Specifically, methods such as mechanical transfer, chemical vapor deposition growth, high temperature conversion, phase engineering, surface doping, electrostatic doping, and so on to fabricate 2D heterostructures are discussed in detail. Applications of these integrated 2D heterostructures in p-n junctions, ohmic contact, high-performance transistors, and phototransistors are also highlighted. Finally, challenges and opportunities of methods to integrate 2D materials are proposed.
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Affiliation(s)
- Yang Ma
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Pulickel M Ajayan
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, 77005, USA
| | - Shubin Yang
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Yongji Gong
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
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42
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Wan S, Li Y, Li W, Mao X, Zhu W, Zeng H. Room-temperature ferroelectricity and a switchable diode effect in two-dimensional α-In 2Se 3 thin layers. NANOSCALE 2018; 10:14885-14892. [PMID: 30043785 DOI: 10.1039/c8nr04422h] [Citation(s) in RCA: 61] [Impact Index Per Article: 10.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Nanoscale room-temperature ferroelectricity is ideal for developing advanced non-volatile high-density memories. However, reaching the thin film limit in conventional ferroelectrics is a long-standing challenge due to the presence of the critical thickness effect. van der Waals materials, thanks to their stable layered structure, saturated interfacial bonding and weak interlayer couplings, are promising for exploring ultra-thin two-dimensional (2D) ferroelectrics and device applications. Here, we demonstrate a switchable room-temperature ferroelectric diode built upon a 2D ferroelectric α-In2Se3 layer as thin as 5 nm in the form of a graphene/α-In2Se3 heterojunction. The intrinsic out-of-plane ferroelectricity of the α-In2Se3 thin layers is evidenced by the observation of reversible spontaneous electric polarization with a relatively low coercive electric field of ∼2 × 105 V cm-1 and a typical ferroelectric domain size of around tens μm2. Owing to the out-of-plane ferroelectricity of the α-In2Se3 layer, the Schottky barrier at the graphene/α-In2Se3 interface can be effectively tuned by switching the electric polarization with an applied voltage, leading to a pronounced switchable double diode effect with an on/off ratio of ∼105. Our results offer a new way for developing novel nanoelectronic devices based on 2D ferroelectrics.
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Affiliation(s)
- Siyuan Wan
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Science at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China.
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43
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Guo L, Wang Y, Kaya D, Palmer RE, Chen G, Guo Q. Orientational Epitaxy of van der Waals Molecular Heterostructures. NANO LETTERS 2018; 18:5257-5261. [PMID: 30001140 DOI: 10.1021/acs.nanolett.8b02238] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
The shape of individual building blocks is an important parameter in bottom-up self-assembly of nanostructured materials. A simple shape change from sphere to spheroid can significantly affect the assembly process due to the modification to the orientational degrees of freedom. When a layer of spheres is placed upon a layer of spheroids, the strain at the interface can be minimized by the spheroid taking a special orientation. C70 fullerenes represent the smallest spheroids, and their interaction with a sphere-like C60 is investigated. We find that the orientation of the C70 within a close-packed C70 layer can be steered by contacting a layer of C60. This orientational steering phenomenon is potentially useful for epitaxial growth of multilayer van der Waals molecular heterostructures.
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Affiliation(s)
- Lu'an Guo
- Department of Applied Physics and Key Laboratory for Quantum Information and Quantum Optoelectronic Devices of Shaanxi Province , Xi'an Jiaotong University , Xi'an 710049 , China
- School of Physics and Astronomy , University of Birmingham , Edgbaston, Birmingham B15 2TT , U.K
| | - Yitao Wang
- School of Physics and Astronomy , University of Birmingham , Edgbaston, Birmingham B15 2TT , U.K
| | - Dogan Kaya
- Department of Electronics and Automation, Vocational School of Adana , Cukurova University , 01160 Cukurova , Adana , Turkey
| | - Richard E Palmer
- College of Engineering , Swansea University , Bay Campus, Fabian Way , Swansea SA1 8EN , U.K
| | - Guangde Chen
- Department of Applied Physics and Key Laboratory for Quantum Information and Quantum Optoelectronic Devices of Shaanxi Province , Xi'an Jiaotong University , Xi'an 710049 , China
| | - Quanmin Guo
- School of Physics and Astronomy , University of Birmingham , Edgbaston, Birmingham B15 2TT , U.K
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44
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Zheng C, Yu L, Zhu L, Collins JL, Kim D, Lou Y, Xu C, Li M, Wei Z, Zhang Y, Edmonds MT, Li S, Seidel J, Zhu Y, Liu JZ, Tang WX, Fuhrer MS. Room temperature in-plane ferroelectricity in van der Waals In 2Se 3. SCIENCE ADVANCES 2018; 4:eaar7720. [PMID: 30027116 PMCID: PMC6044735 DOI: 10.1126/sciadv.aar7720] [Citation(s) in RCA: 98] [Impact Index Per Article: 16.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/17/2017] [Accepted: 06/01/2018] [Indexed: 05/20/2023]
Abstract
Van der Waals (vdW) assembly of layered materials is a promising paradigm for creating electronic and optoelectronic devices with novel properties. Ferroelectricity in vdW layered materials could enable nonvolatile memory and low-power electronic and optoelectronic switches, but to date, few vdW ferroelectrics have been reported, and few in-plane vdW ferroelectrics are known. We report the discovery of in-plane ferroelectricity in a widely investigated vdW layered material, β'-In2Se3. The in-plane ferroelectricity is strongly tied to the formation of one-dimensional superstructures aligning along one of the threefold rotational symmetric directions of the hexagonal lattice in the c plane. Surprisingly, the superstructures and ferroelectricity are stable to 200°C in both bulk and thin exfoliated layers of In2Se3. Because of the in-plane nature of ferroelectricity, the domains exhibit a strong linear dichroism, enabling novel polarization-dependent optical properties.
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Affiliation(s)
- Changxi Zheng
- College of Materials Science and Engineering, Chongqing University, Chongqing 400044, China
- Monash Centre for Atomically Thin Materials, Monash University, Clayton, Victoria 3800, Australia
- Department of Civil Engineering, Monash University, Clayton, Victoria 3800, Australia
- Corresponding author. (C.Z.); (W.-X.T.); (M.S.F.)
| | - Lei Yu
- College of Materials Science and Engineering, Chongqing University, Chongqing 400044, China
| | - Lin Zhu
- College of Materials Science and Engineering, Chongqing University, Chongqing 400044, China
| | - James L. Collins
- Monash Centre for Atomically Thin Materials, Monash University, Clayton, Victoria 3800, Australia
- Australian Research Council (ARC) Centre of Excellence in Future Low-Energy Electronics Technologies, Monash University, Clayton, Victoria 3800, Australia
- School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia
| | - Dohyung Kim
- School of Materials Science and Engineering, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Yaoding Lou
- Department of Mechanical Engineering, University of Melbourne, Melbourne, Victoria 3010, Australia
| | - Chao Xu
- Department of Applied Physics, Hong Kong Polytechnic University, Kowloon, Hong Kong SAR
| | - Meng Li
- College of Materials Science and Engineering, Chongqing University, Chongqing 400044, China
| | - Zheng Wei
- College of Materials Science and Engineering, Chongqing University, Chongqing 400044, China
| | - Yupeng Zhang
- College of Electronic Science and Technology, Shenzhen University, Shenzhen 518060, China
| | - Mark T. Edmonds
- Monash Centre for Atomically Thin Materials, Monash University, Clayton, Victoria 3800, Australia
- Australian Research Council (ARC) Centre of Excellence in Future Low-Energy Electronics Technologies, Monash University, Clayton, Victoria 3800, Australia
- School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia
| | - Shiqiang Li
- Department of Electrical and Electronic Engineering, University of Melbourne, Melbourne, Victoria 3010, Australia
| | - Jan Seidel
- School of Materials Science and Engineering, University of New South Wales, Sydney, New South Wales 2052, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Ye Zhu
- Department of Applied Physics, Hong Kong Polytechnic University, Kowloon, Hong Kong SAR
| | - Jefferson Zhe Liu
- Department of Mechanical Engineering, University of Melbourne, Melbourne, Victoria 3010, Australia
| | - Wen-Xin Tang
- College of Materials Science and Engineering, Chongqing University, Chongqing 400044, China
- Corresponding author. (C.Z.); (W.-X.T.); (M.S.F.)
| | - Michael S. Fuhrer
- Monash Centre for Atomically Thin Materials, Monash University, Clayton, Victoria 3800, Australia
- Australian Research Council (ARC) Centre of Excellence in Future Low-Energy Electronics Technologies, Monash University, Clayton, Victoria 3800, Australia
- School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia
- Corresponding author. (C.Z.); (W.-X.T.); (M.S.F.)
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45
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Vilaplana R, Parra SG, Jorge-Montero A, Rodríguez-Hernández P, Munoz A, Errandonea D, Segura A, Manjón FJ. Experimental and Theoretical Studies on α-In2Se3 at High Pressure. Inorg Chem 2018; 57:8241-8252. [DOI: 10.1021/acs.inorgchem.8b00778] [Citation(s) in RCA: 31] [Impact Index Per Article: 5.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Affiliation(s)
- Rosario Vilaplana
- Centro de Tecnologías Físicas, Universitat Politècnica de València, 46022 Valencia, Spain
| | - Samuel Gallego Parra
- Instituto de Diseño para la Fabricación y Producción Automatizada, Universitat Politècnica de València, 46022 Valencia, Spain
| | - Alejandro Jorge-Montero
- Departamento de Física, Instituto de Materiales y Nanotecnología, MALTA Consolider Team, Universidad de La Laguna, 38207 San Cristóbal de La Laguna, Spain
| | - Plácida Rodríguez-Hernández
- Departamento de Física, Instituto de Materiales y Nanotecnología, MALTA Consolider Team, Universidad de La Laguna, 38207 San Cristóbal de La Laguna, Spain
| | - Alfonso Munoz
- Departamento de Física, Instituto de Materiales y Nanotecnología, MALTA Consolider Team, Universidad de La Laguna, 38207 San Cristóbal de La Laguna, Spain
| | - Daniel Errandonea
- Departamento de Física Aplicada-ICMUV, MALTA Consolider Team, Universidad de Valencia, Edificio de Investigación, C/Dr. Moliner 50, 46100 Burjassot, Spain
| | - Alfredo Segura
- Departamento de Física Aplicada-ICMUV, MALTA Consolider Team, Universidad de Valencia, Edificio de Investigación, C/Dr. Moliner 50, 46100 Burjassot, Spain
| | - Francisco Javier Manjón
- Instituto de Diseño para la Fabricación y Producción Automatizada, Universitat Politècnica de València, 46022 Valencia, Spain
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46
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Yu X, Yu P, Wu D, Singh B, Zeng Q, Lin H, Zhou W, Lin J, Suenaga K, Liu Z, Wang QJ. Atomically thin noble metal dichalcogenide: a broadband mid-infrared semiconductor. Nat Commun 2018; 9:1545. [PMID: 29670119 PMCID: PMC5906448 DOI: 10.1038/s41467-018-03935-0] [Citation(s) in RCA: 152] [Impact Index Per Article: 25.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/25/2017] [Accepted: 03/19/2018] [Indexed: 11/23/2022] Open
Abstract
The interest in mid-infrared technologies surrounds plenty of important optoelectronic applications ranging from optical communications, biomedical imaging to night vision cameras, and so on. Although narrow bandgap semiconductors, such as Mercury Cadmium Telluride and Indium Antimonide, and quantum superlattices based on inter-subband transitions in wide bandgap semiconductors, have been employed for mid-infrared applications, it remains a daunting challenge to search for other materials that possess suitable bandgaps in this wavelength range. Here, we demonstrate experimentally for the first time that two-dimensional (2D) atomically thin PtSe2 has a variable bandgap in the mid-infrared via layer and defect engineering. Here, we show that bilayer PtSe2 combined with defects modulation possesses strong light absorption in the mid-infrared region, and we realize a mid-infrared photoconductive detector operating in a broadband mid-infrared range. Our results pave the way for atomically thin 2D noble metal dichalcogenides to be employed in high-performance mid-infrared optoelectronic devices. The mid-infrared technologies are essential to various applications but suffer from limited materials with suitable bandgap. Here the authors demonstrate that two-dimensional atomically thin PtSe2 with variable bandgaps in the mid-infrared via layer and defect engineering is highly promising for mid-infrared optoelectronics.
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Affiliation(s)
- Xuechao Yu
- Centre for OptoElectronics and Biophotonics, School of Electrical and Electronic Engineering & The Photonics Institute, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Peng Yu
- Centre for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 637371, Singapore
| | - Di Wu
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore, 117546, Singapore.,Department of Physics, National University of Singapore, Singapore, 117542, Singapore
| | - Bahadur Singh
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore, 117546, Singapore.,Department of Physics, National University of Singapore, Singapore, 117542, Singapore
| | - Qingsheng Zeng
- Centre for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 637371, Singapore
| | - Hsin Lin
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore, 117546, Singapore.,Department of Physics, National University of Singapore, Singapore, 117542, Singapore
| | - Wu Zhou
- School of Physics Science, CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Junhao Lin
- National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, 305-8565, Japan
| | - Kazu Suenaga
- National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, 305-8565, Japan
| | - Zheng Liu
- Centre for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 637371, Singapore. .,NOVITAS, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore.
| | - Qi Jie Wang
- Centre for OptoElectronics and Biophotonics, School of Electrical and Electronic Engineering & The Photonics Institute, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.
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47
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Solís-Fernández P, Bissett M, Ago H. Synthesis, structure and applications of graphene-based 2D heterostructures. Chem Soc Rev 2018; 46:4572-4613. [PMID: 28691726 DOI: 10.1039/c7cs00160f] [Citation(s) in RCA: 100] [Impact Index Per Article: 16.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/19/2022]
Abstract
With the profuse amount of two-dimensional (2D) materials discovered and the improvements in their synthesis and handling, the field of 2D heterostructures has gained increased interest in recent years. Such heterostructures not only overcome the inherent limitations of each of the materials, but also allow the realization of novel properties by their proper combination. The physical and mechanical properties of graphene mean it has a prominent place in the area of 2D heterostructures. In this review, we will discuss the evolution and current state in the synthesis and applications of graphene-based 2D heterostructures. In addition to stacked and in-plane heterostructures with other 2D materials and their potential applications, we will also cover heterostructures realized with lower dimensionality materials, along with intercalation in few-layer graphene as a special case of a heterostructure. Finally, graphene heterostructures produced using liquid phase exfoliation techniques and their applications to energy storage will be reviewed.
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48
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Cui C, Hu WJ, Yan X, Addiego C, Gao W, Wang Y, Wang Z, Li L, Cheng Y, Li P, Zhang X, Alshareef HN, Wu T, Zhu W, Pan X, Li LJ. Intercorrelated In-Plane and Out-of-Plane Ferroelectricity in Ultrathin Two-Dimensional Layered Semiconductor In 2Se 3. NANO LETTERS 2018; 18:1253-1258. [PMID: 29378142 DOI: 10.1021/acs.nanolett.7b04852] [Citation(s) in RCA: 212] [Impact Index Per Article: 35.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
Enriching the functionality of ferroelectric materials with visible-light sensitivity and multiaxial switching capability would open up new opportunities for their applications in advanced information storage with diverse signal manipulation functions. We report experimental observations of robust intralayer ferroelectricity in two-dimensional (2D) van der Waals layered α-In2Se3 ultrathin flakes at room temperature. Distinct from other 2D and conventional ferroelectrics, In2Se3 exhibits intrinsically intercorrelated out-of-plane and in-plane polarization, where the reversal of the out-of-plane polarization by a vertical electric field also induces the rotation of the in-plane polarization. On the basis of the in-plane switchable diode effect and the narrow bandgap (∼1.3 eV) of ferroelectric In2Se3, a prototypical nonvolatile memory device, which can be manipulated both by electric field and visible light illumination, is demonstrated for advancing data storage technologies.
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Affiliation(s)
- Chaojie Cui
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology , Thuwal, Jeddah 23955-6900, Kingdom of Saudi Arabia
| | - Wei-Jin Hu
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology , Thuwal, Jeddah 23955-6900, Kingdom of Saudi Arabia
- Shenyang National Laboratory for Materials Science, Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS) , Shenyang 110016, China
| | - Xingxu Yan
- Department of Chemical Engineering and Materials Science, University of California - Irvine , Irvine, California 92697, America
| | - Christopher Addiego
- Department of Physics and Astronomy, University of California - Irvine , Irvine, California 92697, America
| | - Wenpei Gao
- Department of Chemical Engineering and Materials Science, University of California - Irvine , Irvine, California 92697, America
| | - Yao Wang
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University , Nanjing, Jiangsu 211816, China
| | - Zhe Wang
- ICQD, Hefei National Laboratory for Physical Sciences at the Microscale, Synergetic Innovation Center of Quantum Information and Quantum Physics, and Key Laboratory of Strongly-Coupled Quantum Matter Physics (CAS), University of Science and Technology of China , Hefei, Anhui 230026, China
| | - Linze Li
- Department of Chemical Engineering and Materials Science, University of California - Irvine , Irvine, California 92697, America
| | - Yingchun Cheng
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University , Nanjing, Jiangsu 211816, China
| | - Peng Li
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology , Thuwal, Jeddah 23955-6900, Kingdom of Saudi Arabia
| | - Xixiang Zhang
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology , Thuwal, Jeddah 23955-6900, Kingdom of Saudi Arabia
| | - Husam N Alshareef
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology , Thuwal, Jeddah 23955-6900, Kingdom of Saudi Arabia
| | - Tom Wu
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology , Thuwal, Jeddah 23955-6900, Kingdom of Saudi Arabia
| | - Wenguang Zhu
- ICQD, Hefei National Laboratory for Physical Sciences at the Microscale, Synergetic Innovation Center of Quantum Information and Quantum Physics, and Key Laboratory of Strongly-Coupled Quantum Matter Physics (CAS), University of Science and Technology of China , Hefei, Anhui 230026, China
| | - Xiaoqing Pan
- Department of Chemical Engineering and Materials Science, University of California - Irvine , Irvine, California 92697, America
- Department of Physics and Astronomy, University of California - Irvine , Irvine, California 92697, America
| | - Lain-Jong Li
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology , Thuwal, Jeddah 23955-6900, Kingdom of Saudi Arabia
- Corporate Research and Chief Technology Office, Taiwan Semiconductor Manufacturing Company, Hsinchu 30075, Taiwan
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49
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Zeng M, Xiao Y, Liu J, Yang K, Fu L. Exploring Two-Dimensional Materials toward the Next-Generation Circuits: From Monomer Design to Assembly Control. Chem Rev 2018; 118:6236-6296. [DOI: 10.1021/acs.chemrev.7b00633] [Citation(s) in RCA: 298] [Impact Index Per Article: 49.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/06/2023]
Affiliation(s)
- Mengqi Zeng
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, China
| | - Yao Xiao
- The Institute for Advanced Studies (IAS), Wuhan University, Wuhan 430072, China
| | - Jinxin Liu
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, China
| | - Kena Yang
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, China
| | - Lei Fu
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, China
- The Institute for Advanced Studies (IAS), Wuhan University, Wuhan 430072, China
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50
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Wang S, Robertson A, Warner JH. Atomic structure of defects and dopants in 2D layered transition metal dichalcogenides. Chem Soc Rev 2018; 47:6764-6794. [DOI: 10.1039/c8cs00236c] [Citation(s) in RCA: 126] [Impact Index Per Article: 21.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/23/2022]
Abstract
Transmission electron microscopy can directly image the detailed atomic structure of layered transition metal dichalcogenides, revealing defects and dopants.
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Affiliation(s)
- Shanshan Wang
- Science and Technology on Advanced Ceramic Fibers and Composites Laboratory
- College of Aerospace Science and Engineering
- National University of Defense Technology
- Changsha 410073
- P. R. China
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