1
|
Zhang D, Yi P, Lai X, Peng L, Li H. Active machine learning model for the dynamic simulation and growth mechanisms of carbon on metal surface. Nat Commun 2024; 15:344. [PMID: 38184678 PMCID: PMC10771457 DOI: 10.1038/s41467-023-44525-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/16/2023] [Accepted: 12/18/2023] [Indexed: 01/08/2024] Open
Abstract
Substrate-catalyzed growth offers a highly promising approach for the controlled synthesis of carbon nanostructures. However, the growth mechanisms on dynamic catalytic surfaces and the development of more general design strategies remain ongoing challenges. Here we show how an active machine-learning model effectively reveals the microscopic processes involved in substrate-catalyzed growth. Utilizing a synergistic approach of molecular dynamics and time-stamped force-biased Monte Carlo methods, augmented by the Gaussian Approximation Potential, we perform fully dynamic simulations of graphene growth on Cu(111). Our findings accurately replicate essential subprocesses-from the preferred diffusion of carbon monomer/dimer, chain or ring formations to edge-passivated Cu-aided graphene growth and bond breaks by ion impacts. Extending our simulations to carbon deposition on metal surfaces like Cu(111), Cr(110), Ti(001), and oxygen-contaminated Cu(111), our results align closely with experimental observations, providing a practical and efficient approach for designing metallic or alloy substrates to achieve desired carbon nanostructures and explore further reaction possibilities.
Collapse
Affiliation(s)
- Di Zhang
- State Key Laboratory of Mechanical System and Vibration, Shanghai Jiao Tong University, 200240, Shanghai, People's Republic of China.
- Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, Sendai, 980-8577, Japan.
| | - Peiyun Yi
- State Key Laboratory of Mechanical System and Vibration, Shanghai Jiao Tong University, 200240, Shanghai, People's Republic of China
- Shanghai Key Laboratory of Digital Manufacture for Thin-walled Structures, Shanghai Jiao Tong University, 200240, Shanghai, People's Republic of China
| | - Xinmin Lai
- State Key Laboratory of Mechanical System and Vibration, Shanghai Jiao Tong University, 200240, Shanghai, People's Republic of China
- Shanghai Key Laboratory of Digital Manufacture for Thin-walled Structures, Shanghai Jiao Tong University, 200240, Shanghai, People's Republic of China
| | - Linfa Peng
- State Key Laboratory of Mechanical System and Vibration, Shanghai Jiao Tong University, 200240, Shanghai, People's Republic of China.
- Shanghai Key Laboratory of Digital Manufacture for Thin-walled Structures, Shanghai Jiao Tong University, 200240, Shanghai, People's Republic of China.
| | - Hao Li
- Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, Sendai, 980-8577, Japan.
| |
Collapse
|
2
|
Abstract
Two-dimensional (2D) polymers have garnered widespread interest because of their intriguing physicochemical properties. Envisaged applications in fields including nanodevices, solid-state chemistry, physical organic chemistry, and condensed matter physics, however, demand high-quality and large-scale production. In this perspective, we first introduce exotic band structures of organic frameworks holding honeycomb, kagome, and Lieb lattices. We further discuss how mesoscale ordered 2D polymers can be synthesized by means of choosing suitable monomers and optimizing growth conditions. We describe successful polymerization strategies to introducing a non-benzenoid subunit into a π-conjugated carbon lattice via delicately designed monomer precursors. Also, to obviate transfer and restore the intrinsic properties of π-conjugated polymers, new paradigms of aryl-aryl coupling on inert surfaces are discussed. Recent achievements in the photopolymerization demonstrate the need for monomer design. We conclude the potential applications of these organic networks and project the future possibilities in providing new insights into on-surface polymerization.
Collapse
Affiliation(s)
- Tianchao Niu
- Beihang Hangzhou Innovation Institute Yuhang, Xixi Octagon City, Yuhang District, Hangzhou 310023, China
| | - Chenqiang Hua
- Beihang Hangzhou Innovation Institute Yuhang, Xixi Octagon City, Yuhang District, Hangzhou 310023, China
| | - Miao Zhou
- Beihang Hangzhou Innovation Institute Yuhang, Xixi Octagon City, Yuhang District, Hangzhou 310023, China
- School of Physics, Beihang University, No. 37 Xueyuan Road, Haidian District, Beijing 100191, China
| |
Collapse
|
3
|
Cho JH, Cayll D, Behera D, Cullinan M. Towards Repeatable, Scalable Graphene Integrated Micro-Nano Electromechanical Systems (MEMS/NEMS). MICROMACHINES 2021; 13:27. [PMID: 35056192 PMCID: PMC8777989 DOI: 10.3390/mi13010027] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/20/2021] [Revised: 12/11/2021] [Accepted: 12/14/2021] [Indexed: 01/21/2023]
Abstract
The demand for graphene-based devices is rapidly growing but there are significant challenges for developing scalable and repeatable processes for the manufacturing of graphene devices. Basic research on understanding and controlling growth mechanisms have recently enabled various mass production approaches over the past decade. However, the integration of graphene with Micro-Nano Electromechanical Systems (MEMS/NEMS) has been especially challenging due to performance sensitivities of these systems to the production process. Therefore, ability to produce graphene-based devices on a large scale with high repeatability is still a major barrier to the commercialization of graphene. In this review article, we discuss the merits of integrating graphene into Micro-Nano Electromechanical Systems, current approaches for the mass production of graphene integrated devices, and propose solutions to overcome current manufacturing limits for the scalable and repeatable production of integrated graphene-based devices.
Collapse
Affiliation(s)
| | | | | | - Michael Cullinan
- Department of Mechanical Engineering, The University of Texas at Austin, 204 E Dean Keeton St, Austin, TX 78712, USA; (J.H.C.); (D.C.); (D.B.)
| |
Collapse
|
4
|
Sadre R, Ophus C, Butko A, Weber GH. Deep Learning Segmentation of Complex Features in Atomic-Resolution Phase-Contrast Transmission Electron Microscopy Images. MICROSCOPY AND MICROANALYSIS : THE OFFICIAL JOURNAL OF MICROSCOPY SOCIETY OF AMERICA, MICROBEAM ANALYSIS SOCIETY, MICROSCOPICAL SOCIETY OF CANADA 2021; 27:804-814. [PMID: 34353384 DOI: 10.1017/s1431927621000167] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Phase-contrast transmission electron microscopy (TEM) is a powerful tool for imaging the local atomic structure of materials. TEM has been used heavily in studies of defect structures of two-dimensional materials such as monolayer graphene due to its high dose efficiency. However, phase-contrast imaging can produce complex nonlinear contrast, even for weakly scattering samples. It is, therefore, difficult to develop fully automated analysis routines for phase-contrast TEM studies using conventional image processing tools. For automated analysis of large sample regions of graphene, one of the key problems is segmentation between the structure of interest and unwanted structures such as surface contaminant layers. In this study, we compare the performance of a conventional Bragg filtering method with a deep learning routine based on the U-Net architecture. We show that the deep learning method is more general, simpler to apply in practice, and produces more accurate and robust results than the conventional algorithm. We provide easily adaptable source code for all results in this paper and discuss potential applications for deep learning in fully automated TEM image analysis.
Collapse
Affiliation(s)
- Robbie Sadre
- Computational Research Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA94720, USA
| | - Colin Ophus
- NCEM, Molecular Foundry, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA94720, USA
| | - Anastasiia Butko
- Computational Research Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA94720, USA
| | - Gunther H Weber
- Computational Research Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA94720, USA
| |
Collapse
|
5
|
Zhang L, Dong J, Ding F. Strategies, Status, and Challenges in Wafer Scale Single Crystalline Two-Dimensional Materials Synthesis. Chem Rev 2021; 121:6321-6372. [PMID: 34047544 DOI: 10.1021/acs.chemrev.0c01191] [Citation(s) in RCA: 53] [Impact Index Per Article: 17.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/23/2022]
Abstract
The successful exfoliation of graphene has given a tremendous boost to research on various two-dimensional (2D) materials in the last 15 years. Different from traditional thin films, a 2D material is composed of one to a few atomic layers. While atoms within a layer are chemically bonded, interactions between layers are generally weak van der Waals (vdW) interactions. Due to their particular dimensionality, 2D materials exhibit special electronic, magnetic, mechanical, and thermal properties, not found in their 3D counterparts, and therefore they have great potential in various applications, such as 2D materials-based devices. To fully realize their large-scale practical applications, especially in devices, wafer scale single crystalline (WSSC) 2D materials are indispensable. In this review, we present a detailed overview on strategies toward the synthesis of WSSC 2D materials while highlighting the recent progress on WSSC graphene, hexagonal boron nitride (hBN), and transition metal dichalcogenide (TMDC) synthesis. The challenges that need to be addressed in future studies have also been described. In general, there have been two distinct routes to synthesize WSSC 2D materials: (i) allowing only one nucleus on a wafer scale substrate to be formed and developed into a large single crystal and (ii) seamlessly stitching a large number of unidirectionally aligned 2D islands on a wafer scale substrate, which is generally single crystalline. Currently, the synthesis of WSSC graphene has been realized by both routes, and WSSC hBN and MoS2 have been synthesized by route (ii). On the other hand, the growth of other WSSC 2D materials and WSSC multilayer 2D materials still remains a big challenge. In the last section, we wrap up this review by summarizing the future challenges and opportunities in the synthesis of various WSSC 2D materials.
Collapse
Affiliation(s)
- Leining Zhang
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, South Korea.,School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, South Korea
| | - Jichen Dong
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, South Korea.,Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Feng Ding
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, South Korea.,School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, South Korea
| |
Collapse
|
6
|
Wu Q, Fu X, Yang K, Wu H, Liu L, Zhang L, Tian Y, Yin LJ, Huang WQ, Zhang W, Wong PKJ, Zhang L, Wee ATS, Qin Z. Promoting a Weak Coupling of Monolayer MoSe 2 Grown on (100)-Faceted Au Foil. ACS NANO 2021; 15:4481-4489. [PMID: 33656862 DOI: 10.1021/acsnano.0c08513] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
As a two-dimensional semiconductor with many physical properties, including, notably, layer-controlled electronic bandgap and coupled spin-valley degree of freedom, monolayer MoSe2 is a strong candidate material for next-generation opto- and valley-electronic devices. However, due to substrate effects such as lattice mismatch and dielectric screening, preserving the monolayer's intrinsic properties remains challenging. This issue is generally significant for metallic substrates whose active surfaces are commonly utilized to achieve direct chemical or physical vapor growth of the monolayer films. Here, we demonstrate high-temperature-annealed Au foil with well-defined (100) facets as a weakly interacting substrate for atmospheric pressure chemical vapor deposition of highly crystalline monolayer MoSe2. Low-temperature scanning tunneling microscopy/spectroscopy measurements reveal a honeycomb structure of MoSe2 with a quasi-particle bandgap of 1.96 eV, a value comparable with other weakly interacting systems such as MoSe2/graphite. Density functional theory calculations indicate that the Au(100) surface exhibits the preferred energetics to electronically decouple from MoSe2, compared with the (110) and (111) crystal planes. This weak coupling is critical for the easy transfer of monolayers to another host substrate. Our study demonstrates a practical means to produce high-quality monolayers of transition-metal dichalcogenides, viable for both fundamental and application studies.
Collapse
Affiliation(s)
- Qilong Wu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Xiaoshuai Fu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Ke Yang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Hongyu Wu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Li Liu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Li Zhang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Yuan Tian
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Long-Jing Yin
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Wei-Qing Huang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Wen Zhang
- School of Microelectronics & School of Electronics and Information, Northwestern Polytechnical University, Xi'an 710072, People's Republic of China
| | - Ping Kwan Johnny Wong
- School of Microelectronics & School of Electronics and Information, Northwestern Polytechnical University, Xi'an 710072, People's Republic of China
| | - Lijie Zhang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Andrew T S Wee
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
- Centre for Advanced 2D Materials (CA2DM) and Graphene Research Centre (GRC), National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore
| | - Zhihui Qin
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| |
Collapse
|
7
|
|
8
|
Braeuninger-Weimer P, Burton OJ, Zeller P, Amati M, Gregoratti L, Weatherup RS, Hofmann S. Crystal Orientation Dependent Oxidation Modes at the Buried Graphene-Cu Interface. CHEMISTRY OF MATERIALS : A PUBLICATION OF THE AMERICAN CHEMICAL SOCIETY 2020; 32:7766-7776. [PMID: 32982043 PMCID: PMC7513576 DOI: 10.1021/acs.chemmater.0c02296] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/01/2020] [Revised: 08/25/2020] [Indexed: 06/11/2023]
Abstract
We combine spatially resolved scanning photoelectron spectroscopy with confocal Raman and optical microscopy to reveal how the oxidation of the buried graphene-Cu interface relates to the Cu crystallographic orientation. We analyze over 100 different graphene covered Cu (high and low index) orientations exposed to air for 2 years. Four general oxidation modes are observed that can be mapped as regions onto the polar plot of Cu surface orientations. These modes are (1) complete, (2) irregular, (3) inhibited, and (4) enhanced wrinkle interface oxidation. We present a comprehensive characterization of these modes, consider the underlying mechanisms, compare air and water mediated oxidation, and discuss this in the context of the diverse prior literature in this area. This understanding incorporates effects from across the wide parameter space of 2D material interface engineering, relevant to key challenges in their emerging applications, ranging from scalable transfer to electronic contacts, encapsulation, and corrosion protection.
Collapse
Affiliation(s)
| | - Oliver J. Burton
- Department
of Engineering, University of Cambridge, Cambridge CB3 0FA, United Kingdom
| | - Patrick Zeller
- Elettra-Sincrotrone
Trieste S.C.p.A., AREA Science Park, S.S. 14 km 163.5, 34149 Trieste, Italy
| | - Matteo Amati
- Elettra-Sincrotrone
Trieste S.C.p.A., AREA Science Park, S.S. 14 km 163.5, 34149 Trieste, Italy
| | - Luca Gregoratti
- Elettra-Sincrotrone
Trieste S.C.p.A., AREA Science Park, S.S. 14 km 163.5, 34149 Trieste, Italy
| | - Robert S. Weatherup
- Department
of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United
Kingdom
| | - Stephan Hofmann
- Department
of Engineering, University of Cambridge, Cambridge CB3 0FA, United Kingdom
| |
Collapse
|
9
|
Li Y, Sun L, Chang Z, Liu H, Wang Y, Liang Y, Chen B, Ding Q, Zhao Z, Wang R, Wei Y, Peng H, Lin L, Liu Z. Large Single-Crystal Cu Foils with High-Index Facets by Strain-Engineered Anomalous Grain Growth. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2002034. [PMID: 32529704 DOI: 10.1002/adma.202002034] [Citation(s) in RCA: 21] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/24/2020] [Revised: 05/12/2020] [Indexed: 06/11/2023]
Abstract
The rich and complex arrangements of metal atoms in high-index metal facets afford appealing physical and chemical properties, which attracts extensive research interest in material science for the applications in catalysis and surface chemistry. However, it is still a challenge to prepare large-area high-index single crystals in a controllable and cost-efficient manner. Herein, entire commercially available decimeter-sized polycrystalline Cu foils are successfully transformed into single crystals with a series of high-index facets, relying on a strain-engineered anomalous grain growth technique. The introduction of a moderate thermal-contact stress upon the Cu foil during the annealing leads to the formation of high-index grains dominated by the thermal strain of the Cu foils, rather than the (111) surface driven by the surface energy. Besides, the designed static gradient of the temperature enables the as-formed high-index grain seed to expand throughout the entire Cu foil. The as-received high-index Cu foils can serve as the templates for producing high-index single-crystal Cu-based alloys. This work provides an appealing material basis for the epitaxial growth of 2D materials, and the applications that require the unique surface structures of high-index metal foils and their alloys.
Collapse
Affiliation(s)
- Yanglizhi Li
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Luzhao Sun
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Zhenghua Chang
- LNM, Institute of Mechanics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Engineering Sciences, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Haiyang Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Yuechen Wang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Yu Liang
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Buhang Chen
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Qingjie Ding
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Zhenyong Zhao
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Ruoyu Wang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Yujie Wei
- LNM, Institute of Mechanics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Engineering Sciences, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Hailin Peng
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Li Lin
- School of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, UK
| | - Zhongfan Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| |
Collapse
|
10
|
Chen W, Gui X, Yang L, Zhu H, Tang Z. Wrinkling of two-dimensional materials: methods, properties and applications. NANOSCALE HORIZONS 2019; 4:291-320. [PMID: 32254086 DOI: 10.1039/c8nh00112j] [Citation(s) in RCA: 56] [Impact Index Per Article: 11.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Recently, two-dimensional (2D) materials, including graphene, its derivatives, metal films, MXenes and transition metal dichalcogenides (TMDs), have been widely studied because of their tunable electronic structures and special electrical and optical properties. However, during the fabrication of these 2D materials with atomic thickness, formation of wrinkles or folds is unavoidable to enable their stable existence. Meaningfully, it is found that wrinkled structures simultaneously impose positive changes on the 2D materials. Specifically, the architecture of wrinkled structures in 2D materials additionally induces excellent properties, which are of great importance for their practical applications. In this review, we provide an overview of categories of 2D materials, which contains formation and fabrication methods of wrinkled patterns and relevant mechanisms, as well as the induced mechanical, electrical, thermal and optical properties. Furthermore, these properties are modifiable by controlling the surface topography or even by dynamically stretching the 2D materials. Wrinkling offers a platform for 2D materials to be applied in some promising fields such as field emitters, energy containers and suppliers, field effect transistors, hydrophobic surfaces, sensors for flexible electronics and artificial intelligence. Finally, the opportunities and challenges of wrinkled 2D materials in the near future are discussed.
Collapse
Affiliation(s)
- Wenjun Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, P. R. China.
| | | | | | | | | |
Collapse
|
11
|
Habib MR, Liang T, Yu X, Pi X, Liu Y, Xu M. A review of theoretical study of graphene chemical vapor deposition synthesis on metals: nucleation, growth, and the role of hydrogen and oxygen. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2018; 81:036501. [PMID: 29355108 DOI: 10.1088/1361-6633/aa9bbf] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Graphene has attracted intense research interest due to its extraordinary properties and great application potential. Various methods have been proposed for the synthesis of graphene, among which chemical vapor deposition has drawn a great deal of attention for synthesizing large-area and high-quality graphene. Theoretical understanding of the synthesis mechanism is crucial for optimizing the experimental design for desired graphene production. In this review, we discuss the three fundamental steps of graphene synthesis in details, i.e. (1) decomposition of carbon feedstocks and formation of various active carbon species, (2) nucleation, and (3) attachment and extension. We provide a complete scenario of graphene synthesis on metal surfaces at atomistic level by means of density functional theory, molecular dynamics (MD), Monte Carlo (MC) and their combination and interface with other simulation methods such as quantum mechanical molecular dynamics, density functional tight binding molecular dynamics, and combination of MD and MC. We also address the latest investigation of the influences of the hydrogen and oxygen on the synthesis and the quality of the synthesized graphene.
Collapse
Affiliation(s)
- Mohammad Rezwan Habib
- State Key Laboratory of Silicon Materials, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China
| | | | | | | | | | | |
Collapse
|
12
|
McLean B, Eveleens CA, Mitchell I, Webber GB, Page AJ. Catalytic CVD synthesis of boron nitride and carbon nanomaterials - synergies between experiment and theory. Phys Chem Chem Phys 2018; 19:26466-26494. [PMID: 28849841 DOI: 10.1039/c7cp03835f] [Citation(s) in RCA: 22] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Low-dimensional carbon and boron nitride nanomaterials - hexagonal boron nitride, graphene, boron nitride nanotubes and carbon nanotubes - remain at the forefront of advanced materials research. Catalytic chemical vapour deposition has become an invaluable technique for reliably and cost-effectively synthesising these materials. In this review, we will emphasise how a synergy between experimental and theoretical methods has enhanced the understanding and optimisation of this synthetic technique. This review examines recent advances in the application of CVD to synthesising boron nitride and carbon nanomaterials and highlights where, in many cases, molecular simulations and quantum chemistry have provided key insights complementary to experimental investigation. This synergy is particularly prominent in the field of carbon nanotube and graphene CVD synthesis, and we propose here it will be the key to future advances in optimisation of CVD synthesis of boron nitride nanomaterials, boron nitride - carbon composite materials, and other nanomaterials generally.
Collapse
Affiliation(s)
- Ben McLean
- School of Environmental & Life Sciences, The University of Newcastle, Callaghan NSW 2308, Australia.
| | | | | | | | | |
Collapse
|
13
|
Rahmani Didar B, Balbuena PB. Adsorption of Carbon on Partially Oxidized Low-Index Cu Surfaces. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2018; 34:1311-1320. [PMID: 29275634 DOI: 10.1021/acs.langmuir.7b03456] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
We use first-principles calculations to study the carbon adsorption on copper slabs of (100) and (111) surfaces predosed by oxygen atoms. Our results show that on both surfaces, an incoming carbon atom has the ability to replace and completely desorb a previously surface-adsorbed oxygen atom producing CO and CO2 molecules in the gas phase. By comparison, the (111) surface is better suited for oxygen desorption, and an incoming carbon atom can more easily bond to and desorb oxygen atoms even at low oxygen coverages. We examine this mechanism at two different temperatures for both surfaces at 0.5 ML oxygen coverage. An implication of this process is the experimentally proven cleaning effect of predosing copper surfaces with oxygen before graphene growth in the chemical vapor deposition process. Conversely, adsorption and diffusion of carbon atoms, both of which are necessary for the nucleation and growth of carbon nanotubes, may be hindered by the presence of the oxidized or partially oxidized surfaces.
Collapse
Affiliation(s)
- Behnaz Rahmani Didar
- Department of Chemical Engineering, Texas A&M University , College Station, Texas 77843, United States
| | - Perla B Balbuena
- Department of Chemical Engineering, Texas A&M University , College Station, Texas 77843, United States
| |
Collapse
|
14
|
Didar BR, Khosravian H, Balbuena PB. Temperature effect on the nucleation of graphene on Cu (111). RSC Adv 2018; 8:27825-27831. [PMID: 35542706 PMCID: PMC9083936 DOI: 10.1039/c8ra05478a] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/26/2018] [Accepted: 07/26/2018] [Indexed: 01/08/2023] Open
Abstract
Repeated thermal cycling by using an organic precursor is shown to be a successful technique for growing graphene on metal substrates. Having control on this process is of vital importance in producing large areas of high quality graphene with well-ordered surface characteristics, which leads us to investigate the effect of temperature on the microscopic mechanisms behind this process. Apart from being an important factor in the dissociation of the organic precursor and promoting the reactions taking place on the surface of the catalyst, temperature also plays a major role in the structure of the catalyst surface. First, we used eight thermal cycles to successfully grow graphene on the surface of Cu (111). Then, we employed Ab Initio Molecular Dynamics (AIMD) simulations to study graphene island alignment evolution at two temperatures. The results shed light on our experimental observations and those reported in the literature and point to the effectiveness of controlled thermal cycling in producing high quality graphene sheets on transition metal catalyst surfaces. Repeated thermal cycling by using an organic precursor is shown to be a successful technique for growing graphene on metal substrates.![]()
Collapse
Affiliation(s)
- Behnaz Rahmani Didar
- Artie McFerrin Department of Chemical Engineering
- Texas A&M University
- College Station
- USA
| | - Homa Khosravian
- Artie McFerrin Department of Chemical Engineering
- Texas A&M University
- College Station
- USA
| | - Perla B. Balbuena
- Artie McFerrin Department of Chemical Engineering
- Texas A&M University
- College Station
- USA
| |
Collapse
|
15
|
Liang T, Luan C, Chen H, Xu M. Exploring oxygen in graphene chemical vapor deposition synthesis. NANOSCALE 2017; 9:3719-3735. [PMID: 28267184 DOI: 10.1039/c7nr00188f] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Graphene's practical applications require its reproducible production with controlled means. In particular, graphene synthesis by chemical vapor deposition on metals has been shown to be a promising way to produce large-size and high-quality graphene film at low cost. Understanding the reaction mechanisms during the synthesis process is vital for process and product controllability. There have been a great deal of studies regarding the mutual interplays between the metal, graphene, and hydrogen in graphene production, leading to significant advances in controllable graphene synthesis. Recently, oxygen has been found to play a key role in each step of graphene synthesis, especially on Cu. Taking oxygen into consideration, one can explain the divergent experimental results under similar conditions reported before and can grasp it as another powerful tool that can help to regulate the synthesis processes. The primary discoveries of the function of oxygen in graphene synthesis are summarized and discussed herein, divided into four aspects, corresponding to the elementary steps in graphene synthesis. Oxygen may also further promote graphene synthesis toward the final goal of developing wafer-scale single crystals with definite layer numbers and defects.
Collapse
Affiliation(s)
- Tao Liang
- College of Information Science & Electronic Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, P. R. China. and Department of Polymer Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
| | - Chunyan Luan
- College of Information Science & Electronic Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, P. R. China.
| | - Hongzheng Chen
- Department of Polymer Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
| | - Mingsheng Xu
- College of Information Science & Electronic Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, P. R. China.
| |
Collapse
|
16
|
Borah M, Pathak AK, Singh DK, Pal P, Dhakate SR. Role of limited hydrogen and flow interval on the growth of single crystal to continuous graphene by low-pressure chemical vapor deposition. NANOTECHNOLOGY 2017; 28:075602. [PMID: 28084223 DOI: 10.1088/1361-6528/aa527e] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
A method for defect-free large crystallite graphene growth remains unknown despite much research effort. In this work, we discuss the role of flow duration of H2 gas for the production of graphene as per requirement and production at a minimum flow rate considering the safety issue of hydrogen utilization. The copper substrate used for growth was treated for different time intervals (0 to 35 min) in H2 flow prior to growth. Structural and chemical changes occurring in the copper substrate surface were probed by grazing incidence x-ray diffraction and x-ray photoelectron spectroscopy. The results were correlated with the Raman spectroscopy data, which can quantify the quality of graphene. With increasing H2 flow interval, secondary nucleation sites were observed and growth favored few-layer graphene structures. The surface-adsorbed oxygen molecules and its conversion to an OH terminated surface with increasing hydrogen flow interval was found to be a key factor in enhancing nucleation density. The Stranski-Krastanov type of nucleation was observed for samples grown with different time intervals of H2 treatment, except 5 min of H2 flow prior to growth for which the Volmer-Weber type of growth favored monolayer graphene crystallite growth.
Collapse
Affiliation(s)
- Munu Borah
- Advanced Carbon Products section, Advanced Materials and Devices Division, CSIR-National Physical Laboratory, New Delhi-110012, India. Academy of Scientific & Innovative Research (AcSIR), CSIR-NPL, New Delhi-110012, India
| | | | | | | | | |
Collapse
|
17
|
Wang C, Schouteden K, Wu QH, Li Z, Jiang J, Van Haesendonck C. Atomic resolution of nitrogen-doped graphene on Cu foils. NANOTECHNOLOGY 2016; 27:365702. [PMID: 27479275 DOI: 10.1088/0957-4484/27/36/365702] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Atomic-level substitutional doping can significantly tune the electronic properties of graphene. Using low-temperature scanning tunneling microscopy and spectroscopy, the atomic-scale crystalline structure of graphene grown on polycrystalline Cu, the distribution of nitrogen dopants and their effect on the electronic properties of graphene were investigated. Both the graphene sheet growth and nitrogen doping were performed using microwave plasma-enhanced chemical vapor deposition. The results indicated that the nitrogen dopants preferentially sit at the grain boundaries of the graphene sheets and confirmed that plasma treatment is a potential method to incorporate foreign atoms into the graphene lattice to tailor the graphene's electronic properties.
Collapse
Affiliation(s)
- Chundong Wang
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China. Laboratory of Solid-State Physics and Magnetism, Department of Physics and Astronomy, KU Leuven, B-3001 Leuven, Belgium
| | | | | | | | | | | |
Collapse
|
18
|
Chen W, Gui X, Liang B, Liu M, Lin Z, Zhu Y, Tang Z. Controllable Fabrication of Large-Area Wrinkled Graphene on a Solution Surface. ACS APPLIED MATERIALS & INTERFACES 2016; 8:10977-10984. [PMID: 27111911 DOI: 10.1021/acsami.6b00137] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
It is unavoidable to form wrinkles, which are folds or creases in a material, in graphene, whenever the graphene is prepared by micromechanical exfoliation from graphite or chemical vapor deposition (CVD). However, the controllable formation and structures of graphene with nanoscale wrinkles remains a big challenge. Here, we report a liquid-phase shrink method to controllably fabricate large-area wrinkled graphene (WG). The CVD-prepared graphene self-shrinks into a WG on an ethanol solution surface. By modifying the concentration of the ethanol solution, we can easily and efficiently obtain WG with a uniform distribution of wrinkles with different heights. The WG shows high stretchability and can withstand more than 100% tensile strain and up to 720° twist. Furthermore, electromechanical response sensors based on double-layer stacking of WG show ultrahigh sensitivity. This simple, effective, and environmentally friendly liquid-phase shrink method will pave a way for the controllable formation of WG, which is an ideal candidate for application in highly stretchable and highly sensitive electronic devices.
Collapse
Affiliation(s)
- Wenjun Chen
- State Key Lab of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University , Guangzhou 510275, P.R. China
| | - Xuchun Gui
- State Key Lab of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University , Guangzhou 510275, P.R. China
- Department of Physics, Hong Kong University of Science and Technology , Clear Water Bay, Kowloon, Hong Kong, China
| | - Binghao Liang
- State Key Lab of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University , Guangzhou 510275, P.R. China
| | - Ming Liu
- State Key Lab of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University , Guangzhou 510275, P.R. China
| | - Zhiqiang Lin
- State Key Lab of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University , Guangzhou 510275, P.R. China
| | - Yuan Zhu
- State Key Lab of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University , Guangzhou 510275, P.R. China
| | - Zikang Tang
- State Key Lab of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University , Guangzhou 510275, P.R. China
- Institute of Applied Physics and Materials Engineering, University of Macau , Avenida da Universidade, Taipa, Macau, China
| |
Collapse
|
19
|
Vondráček M, Kalita D, Kučera M, Fekete L, Kopeček J, Lančok J, Coraux J, Bouchiat V, Honolka J. Nanofaceting as a stamp for periodic graphene charge carrier modulations. Sci Rep 2016; 6:23663. [PMID: 27040365 PMCID: PMC4819194 DOI: 10.1038/srep23663] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/07/2015] [Accepted: 02/23/2016] [Indexed: 11/30/2022] Open
Abstract
The exceptional electronic properties of monatomic thin graphene sheets triggered numerous original transport concepts, pushing quantum physics into the realm of device technology for electronics, optoelectronics and thermoelectrics. At the conceptual pivot point is the particular two-dimensional massless Dirac fermion character of graphene charge carriers and its volitional modification by intrinsic or extrinsic means. Here, interfaces between different electronic and structural graphene modifications promise exciting physics and functionality, in particular when fabricated with atomic precision. In this study we show that quasiperiodic modulations of doping levels can be imprinted down to the nanoscale in monolayer graphene sheets. Vicinal copper surfaces allow to alternate graphene carrier densities by several 10(13) carriers per cm(2) along a specific copper high-symmetry direction. The process is triggered by a self-assembled copper faceting process during high-temperature graphene chemical vapor deposition, which defines interfaces between different graphene doping levels at the atomic level.
Collapse
Affiliation(s)
- M. Vondráček
- Institute of Physics of the Czech Academy of Sciences, CZ-182 21 Praha 8, Czech Republic
| | - D. Kalita
- Univ. Grenoble Alpes, Inst. NEEL, F-38000 Grenoble, France
- CNRS, Inst. NEEL, F-38000 Grenoble, France
| | - M. Kučera
- Institute of Physics of the Czech Academy of Sciences, CZ-182 21 Praha 8, Czech Republic
| | - L. Fekete
- Institute of Physics of the Czech Academy of Sciences, CZ-182 21 Praha 8, Czech Republic
| | - J. Kopeček
- Institute of Physics of the Czech Academy of Sciences, CZ-182 21 Praha 8, Czech Republic
| | - J. Lančok
- Institute of Physics of the Czech Academy of Sciences, CZ-182 21 Praha 8, Czech Republic
| | - J. Coraux
- Univ. Grenoble Alpes, Inst. NEEL, F-38000 Grenoble, France
- CNRS, Inst. NEEL, F-38000 Grenoble, France
| | - V. Bouchiat
- Univ. Grenoble Alpes, Inst. NEEL, F-38000 Grenoble, France
- CNRS, Inst. NEEL, F-38000 Grenoble, France
| | - J. Honolka
- Institute of Physics of the Czech Academy of Sciences, CZ-182 21 Praha 8, Czech Republic
| |
Collapse
|
20
|
Griep MH, Sandoz-Rosado E, Tumlin TM, Wetzel E. Enhanced Graphene Mechanical Properties through Ultrasmooth Copper Growth Substrates. NANO LETTERS 2016; 16:1657-62. [PMID: 26882091 DOI: 10.1021/acs.nanolett.5b04531] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
The combination of extraordinary strength and stiffness in conjunction with exceptional electronic and thermal properties in lightweight two-dimensional materials has propelled graphene research toward a wide array of applications including flexible electronics and functional structural components. Tailoring graphene's properties toward a selected application requires precise control of the atomic layer growth process, transfer, and postprocessing procedures. To date, the mechanical properties of graphene are largely controlled through postprocess defect engineering techniques. In this work, we demonstrate the role of varied catalytic surface morphologies on the tailorability of subsequent graphene film quality and breaking strength, providing a mechanism to tailor the physical, electrical, and mechanical properties at the growth stage. A new surface planarization methodology that results in over a 99% reduction in Cu surface roughness allows for smoothness parameters beyond that reported to date in literature and clearly demonstrates the role of Cu smoothness toward a decrease in the formation of bilayer graphene defects, altered domain sizes, monolayer graphene sheet resistance values down to 120 Ω/□ and a 78% improvement in breaking strength. The combined electrical and mechanical enhancements achieved through this methodology allows for the direct growth of application quality flexible transparent conductive films with monolayer graphene.
Collapse
Affiliation(s)
- Mark H Griep
- U.S. Army Research Laboratory, Aberdeen Proving Ground , 4600 Deer Creek Loop, Aberdeen, Maryland 21005, United States
| | - Emil Sandoz-Rosado
- U.S. Army Research Laboratory, Aberdeen Proving Ground , 4600 Deer Creek Loop, Aberdeen, Maryland 21005, United States
| | - Travis M Tumlin
- U.S. Army Research Laboratory, Aberdeen Proving Ground , 4600 Deer Creek Loop, Aberdeen, Maryland 21005, United States
| | - Eric Wetzel
- U.S. Army Research Laboratory, Aberdeen Proving Ground , 4600 Deer Creek Loop, Aberdeen, Maryland 21005, United States
| |
Collapse
|
21
|
Jiang Y, Yang L, Guo Z, Lei S. The Assembling of Poly (3-Octyl-Thiophene) on CVD Grown Single Layer Graphene. Sci Rep 2015; 5:17720. [PMID: 26634648 PMCID: PMC4669485 DOI: 10.1038/srep17720] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/18/2015] [Accepted: 11/03/2015] [Indexed: 01/06/2023] Open
Abstract
The interface between organic semiconductor and graphene electrode, especially the structure of the first few molecular layers at the interface, is crucial for the device properties such as the charge transport in organic field effect transistors. In this work, we have used scanning tunneling microscopy to investigate the poly (3-octyl-thiophene) (P3OT)-graphene interface. Our results reveal the dynamic assembling of P3OT on single layer graphene. As on other substrates the epitaxial effect plays a role in determining the orientation of the P3OT assembling, however, the inter-thiophene distance along the backbone is consistent with that optimized in vaccum, no compression was observed. Adsorption of P3OT on ripples is weaker due to local curvature, which has been verified both by scanning tunneling microscopy and density functional theory simulation. Scanning tunneling microscopy also reveals that P3OT tends to form hairpin folds when meets a ripple.
Collapse
Affiliation(s)
- Yanqiu Jiang
- Key Laboratory of Microsystems and Microstructures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin, 150080, People's Republic of China
| | - Ling Yang
- Key Laboratory of Microsystems and Microstructures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin, 150080, People's Republic of China
| | - Zongxia Guo
- School of Polymer Science and Engineering, Qingdao University of Science and Technology, Qingdao, 266042, People's Republic of China
| | - Shengbin Lei
- Key Laboratory of Microsystems and Microstructures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin, 150080, People's Republic of China
| |
Collapse
|
22
|
Temperature Evolution of Quasi-one-dimensional C60 Nanostructures on Rippled Graphene. Sci Rep 2015; 5:14336. [PMID: 26391054 PMCID: PMC4585716 DOI: 10.1038/srep14336] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/27/2015] [Accepted: 08/25/2015] [Indexed: 11/08/2022] Open
Abstract
We report the preparation of novel quasi-one-dimensional (quasi-1D) C60 nanostructures on rippled graphene. Through careful control of the subtle balance between the linear periodic potential of rippled graphene and the C60 surface mobility, we demonstrate that C60 molecules can be arranged into a quasi-1D C60 chain structure with widths of two to three molecules. At a higher annealing temperature, the quasi-1D chain structure transitions to a more compact hexagonal close packed quasi-1D stripe structure. This first experimental realization of quasi-1D C60 structures on graphene may pave a way for fabricating new C60/graphene hybrid structures for future applications in electronics, spintronics and quantum information.
Collapse
|
23
|
Dedkov Y, Voloshina E. Graphene growth and properties on metal substrates. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2015; 27:303002. [PMID: 26151341 DOI: 10.1088/0953-8984/27/30/303002] [Citation(s) in RCA: 16] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Graphene-metal interface as one of the interesting graphene-based objects attracts much attention from both application and fundamental science points of view. This paper gives a timely review of the recent experimental works on the growth and the electronic properties of the graphene-metal interfaces. This work makes a link between huge amount of experimental and theoretical data allowing one to understand the influence of the metallic substrate on the electronic properties of a graphene overlayer and how its properties can be modified in a controllable way. The further directions of studies and applications of the graphene-metal interfaces are discussed.
Collapse
Affiliation(s)
- Yuriy Dedkov
- SPECS Surface Nano Analysis GmbH, Voltastrasse 5, 13355 Berlin, Germany
| | | |
Collapse
|
24
|
Wu Z, Li X, Zhong H, Zhang S, Wang P, Kim TH, Kwak SS, Liu C, Chen H, Kim SW, Lin S. Graphene/h-BN/ZnO van der Waals tunneling heterostructure based ultraviolet photodetector. OPTICS EXPRESS 2015; 23:18864-71. [PMID: 26367550 DOI: 10.1364/oe.23.018864] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
We report a novel ultraviolet photodetector based on graphene/h-BN/ZnO van der Waals heterostructure. Graphene/ZnO heterostructure shows poor rectification behavior and almost no photoresponse. In comparison, graphene/h-BN/ZnO structure shows improved electrical rectified behavior and surprising high UV photoresponse (1350AW(-1)), which is two or three orders magnitude larger than reported GaN UV photodetector (0.2~20AW(-1)). Such high photoresponse mainly originates from the introduction of ultrathin two-dimensional (2D) insulating h-BN layer, which behaves as the tunneling layer for holes produced in ZnO and the blocking layer for holes in graphene. The graphene/h-BN/ZnO heterostructure should be a novel and representative 2D heterostructure for improving the performance of 2D materials/Semiconductor heterostructure based optoelectronic devices.
Collapse
|
25
|
Tang X, Zhang K, Deng X, Zhang P, Pei Y. Interfacial adhesion properties of graphene sheet on nanoscale corrugated surface: a molecular dynamics simulation study. MOLECULAR SIMULATION 2015. [DOI: 10.1080/08927022.2015.1059430] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
|
26
|
MacLeod JM, Lipton-Duffin JA, Cui D, De Feyter S, Rosei F. Substrate Effects in the Supramolecular Assembly of 1,3,5-Benzene Tricarboxylic Acid on Graphite and Graphene. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2015; 31:7016-7024. [PMID: 25594568 DOI: 10.1021/la5048886] [Citation(s) in RCA: 19] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
The behavior of small molecules on a surface depends critically on both molecule-substrate and intermolecular interactions. We present here a detailed comparative investigation of 1,3,5-benzene tricarboxylic acid (trimesic acid, TMA) on two different surfaces: highly oriented pyrolytic graphite (HOPG) and single-layer graphene (SLG) grown on a polycrystalline Cu foil. On the basis of high-resolution scanning tunnelling microscopy (STM) images, we show that the epitaxy matrix for the hexagonal TMA chicken wire phase is identical on these two surfaces, and, using density functional theory (DFT) with a non-local van der Waals correlation contribution, we identify the most energetically favorable adsorption geometries. Simulated STM images based on these calculations suggest that the TMA lattice can stably adsorb on sites other than those identified to maximize binding interactions with the substrate. This is consistent with our net energy calculations that suggest that intermolecular interactions (TMA-TMA dimer bonding) are dominant over TMA-substrate interactions in stabilizing the system. STM images demonstrate the robustness of the TMA films on SLG, where the molecular network extends across the variable topography of the SLG substrates and remains intact after rinsing and drying the films. These results help to elucidate molecular behavior on SLG and suggest significant similarities between adsorption on HOPG and SLG.
Collapse
Affiliation(s)
- J M MacLeod
- †INRS Énergie, Matériaux et Télécommunications, Université du Québec, 1650 Boul. Lionel-Boulet, Varennes, QC J3X 1S2, Canada
| | - J A Lipton-Duffin
- †INRS Énergie, Matériaux et Télécommunications, Université du Québec, 1650 Boul. Lionel-Boulet, Varennes, QC J3X 1S2, Canada
| | - D Cui
- †INRS Énergie, Matériaux et Télécommunications, Université du Québec, 1650 Boul. Lionel-Boulet, Varennes, QC J3X 1S2, Canada
| | - S De Feyter
- ‡Department of Chemistry, Division of Molecular Imaging and Photonics, KU Leuven-University of Leuven, Celestijnenlaan 200F, B-3001 Leuven, Belgium
| | - F Rosei
- †INRS Énergie, Matériaux et Télécommunications, Université du Québec, 1650 Boul. Lionel-Boulet, Varennes, QC J3X 1S2, Canada
- §Center for Self-Assembled Chemical Structures, McGill University, 801 Sherbrooke Street West, Montreal, QC H3A 0B8, Canada
| |
Collapse
|
27
|
High-speed roll-to-roll manufacturing of graphene using a concentric tube CVD reactor. Sci Rep 2015; 5:10257. [PMID: 25997124 PMCID: PMC4440526 DOI: 10.1038/srep10257] [Citation(s) in RCA: 125] [Impact Index Per Article: 13.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/22/2015] [Accepted: 04/07/2015] [Indexed: 12/23/2022] Open
Abstract
We present the design of a concentric tube (CT) reactor for roll-to-roll chemical vapor deposition (CVD) on flexible substrates, and its application to continuous production of graphene on copper foil. In the CTCVD reactor, the thin foil substrate is helically wrapped around the inner tube, and translates through the gap between the concentric tubes. We use a bench-scale prototype machine to synthesize graphene on copper substrates at translation speeds varying from 25 mm/min to 500 mm/min, and investigate the influence of process parameters on the uniformity and coverage of graphene on a continuously moving foil. At lower speeds, high-quality monolayer graphene is formed; at higher speeds, rapid nucleation of small graphene domains is observed, yet coalescence is prevented by the limited residence time in the CTCVD system. We show that a smooth isothermal transition between the reducing and carbon-containing atmospheres, enabled by injection of the carbon feedstock via radial holes in the inner tube, is essential to high-quality roll-to-roll graphene CVD. We discuss how the foil quality and microstructure limit the uniformity of graphene over macroscopic dimensions. We conclude by discussing means of scaling and reconfiguring the CTCVD design based on general requirements for 2-D materials manufacturing.
Collapse
|
28
|
Rong Y, He K, Pacios M, Robertson AW, Bhaskaran H, Warner JH. Controlled preferential oxidation of grain boundaries in monolayer tungsten disulfide for direct optical imaging. ACS NANO 2015; 9:3695-3703. [PMID: 25870912 DOI: 10.1021/acsnano.5b00852] [Citation(s) in RCA: 61] [Impact Index Per Article: 6.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Synthetic 2D crystal films grown by chemical vapor deposition are typically polycrystalline, and determining grain size within domains and continuous films is crucial for determining their structure. Here we show that grain boundaries in the 2D transition metal dichalcogenide WS2, grown by CVD, can be preferentially oxidized by controlled heating in air. Under our developed conditions, preferential degradation at the grain boundaries causes an increase in their physical size due to oxidation. This increase in size enables their clear and rapid identification using a standard optical microscope. We demonstrate that similar treatments in an Ar environment do no show this effect, confirming that oxidation is the main role in the structural change. Statistical analysis of grain boundary (GB) angles shows dominant mirror formation. Electrical biasing across the GB is shown to lead to changes at the GB and their observation under an optical microscope. Our approach enables high-throughput screening of as-synthesized WS2 domains and continuous films to determine their crystallinity and should enable improvements in future CVD growth of these materials.
Collapse
Affiliation(s)
- Youmin Rong
- Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, United Kingdom
| | - Kuang He
- Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, United Kingdom
| | - Mercè Pacios
- Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, United Kingdom
| | - Alex W Robertson
- Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, United Kingdom
| | - Harish Bhaskaran
- Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, United Kingdom
| | - Jamie H Warner
- Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, United Kingdom
| |
Collapse
|
29
|
Wang ZJ, Weinberg G, Zhang Q, Lunkenbein T, Klein-Hoffmann A, Kurnatowska M, Plodinec M, Li Q, Chi L, Schloegl R, Willinger MG. Direct observation of graphene growth and associated copper substrate dynamics by in situ scanning electron microscopy. ACS NANO 2015; 9:1506-19. [PMID: 25584770 DOI: 10.1021/nn5059826] [Citation(s) in RCA: 39] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
This work highlights the importance of in situ experiments for an improved understanding of graphene growth on copper via metal-catalyzed chemical vapor deposition (CVD). Graphene growth inside the chamber of a modified environmental scanning electron microscope under relevant low-pressure CVD conditions allows visualizing structural dynamics of the active catalyst simultaneously with graphene nucleation and growth in an unparalleled way. It enables the observation of a complete CVD process from substrate annealing through graphene nucleation and growth and, finally, substrate cooling in real time and nanometer-scale resolution without the need of sample transfer. A strong dependence of surface dynamics such as sublimation and surface premelting on grain orientation is demonstrated, and the influence of substrate dynamics on graphene nucleation and growth is presented. Insights on the growth mechanism are provided by a simultaneous observation of the growth front propagation and nucleation rate. Furthermore, the role of trace amounts of oxygen during growth is discussed and related to graphene-induced surface reconstructions during cooling. Above all, this work demonstrates the potential of the method for in situ studies of surface dynamics on active metal catalysts.
Collapse
Affiliation(s)
- Zhu-Jun Wang
- Fritz Haber Institute of the Max Planck Society , D-14195 Berlin-Dahlem, Germany
| | | | | | | | | | | | | | | | | | | | | |
Collapse
|
30
|
Borah M, Singh DK, Subhedar KM, Dhakate SR. The role of substrate purity and its crystallographic orientation in the defect density of chemical vapor deposition grown monolayer graphene. RSC Adv 2015. [DOI: 10.1039/c5ra13480c] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/30/2022] Open
Abstract
Here, we are reporting about the role of the copper substrate purity and its crystallographic orientation in the quality of the graphene grown using a low pressure chemical vapor deposition technique.
Collapse
Affiliation(s)
- Munu Borah
- Physics and Engineering of Carbon
- Division of Material Physics and Engineering
- CSIR-National Physical Laboratory
- New Delhi-110012
- India
| | - Dilip K. Singh
- Physics and Engineering of Carbon
- Division of Material Physics and Engineering
- CSIR-National Physical Laboratory
- New Delhi-110012
- India
| | - Kiran M. Subhedar
- Physics and Engineering of Carbon
- Division of Material Physics and Engineering
- CSIR-National Physical Laboratory
- New Delhi-110012
- India
| | - Sanjay R. Dhakate
- Physics and Engineering of Carbon
- Division of Material Physics and Engineering
- CSIR-National Physical Laboratory
- New Delhi-110012
- India
| |
Collapse
|
31
|
Wang H, Liu F, Fu W, Fang Z, Zhou W, Liu Z. Two-dimensional heterostructures: fabrication, characterization, and application. NANOSCALE 2014; 6:12250-72. [PMID: 25219598 DOI: 10.1039/c4nr03435j] [Citation(s) in RCA: 143] [Impact Index Per Article: 14.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
Two-dimensional (2D) materials such as graphene, hexagonal boron nitrides (hBN), and transition metal dichalcogenides (TMDs, e.g., MoS2) have attracted considerable attention in the past few years because of their novel properties and versatile potential applications. These 2D layers can be integrated into a monolayer (lateral 2D heterostructure) or a multilayer stack (vertical 2D heterostructure). The resulting artificial 2D structures provide access to new properties and applications beyond their component 2D atomic crystals and hence, they are emerging as a new exciting field of research. In this article, we review recent progress on the fabrication, characterization, and applications of various 2D heterostructures.
Collapse
Affiliation(s)
- Hong Wang
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798.
| | | | | | | | | | | |
Collapse
|
32
|
Bai KK, Zhou Y, Zheng H, Meng L, Peng H, Liu Z, Nie JC, He L. Creating one-dimensional nanoscale periodic ripples in a continuous mosaic graphene monolayer. PHYSICAL REVIEW LETTERS 2014; 113:086102. [PMID: 25192109 DOI: 10.1103/physrevlett.113.086102] [Citation(s) in RCA: 35] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/15/2014] [Indexed: 06/03/2023]
Abstract
In previous studies, it has proved difficult to realize periodic graphene ripples with wavelengths of a few nanometers. Here we show that one-dimensional (1D) periodic graphene ripples with wavelengths from 2 nm to tens of nanometers can be implemented in the intrinsic areas of a continuous mosaic (locally N-doped) graphene monolayer by simultaneously using both the thermal strain engineering and the anisotropic surface stress of the Cu substrate. Our result indicates that the constraint imposed at the boundaries between the intrinsic and the N-doped regions play a vital role in creating these 1D ripples. We also demonstrate that the observed rippling modes are beyond the descriptions of continuum mechanics due to the decoupling of graphene's bending and tensional deformations. Scanning tunneling spectroscopy measurements indicate that the nanorippling generates a periodic electronic superlattice and opens a zero-energy gap of about 130 meV in graphene. This result may pave a facile way for tailoring the structures and electronic properties of graphene.
Collapse
Affiliation(s)
- Ke-Ke Bai
- Department of Physics, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Yu Zhou
- Center for Nanochemistry (CNC), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Hong Zheng
- Department of Physics, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Lan Meng
- Department of Physics, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Hailin Peng
- Center for Nanochemistry (CNC), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Zhongfan Liu
- Center for Nanochemistry (CNC), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Jia-Cai Nie
- Department of Physics, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Lin He
- Department of Physics, Beijing Normal University, Beijing 100875, People's Republic of China
| |
Collapse
|
33
|
Zhou S, Su Y, Xiao Y, Zhao N, Xu J, Wong C. Low-voltage graphene field-effect transistors based on octadecylphosphonic acid modified solution-processed high-k dielectrics. NANOTECHNOLOGY 2014; 25:265201. [PMID: 24915783 DOI: 10.1088/0957-4484/25/26/265201] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
In this study, a solution-processed bilayer high-k dielectric (Al2O(y)/TiO(x), abbrev. as ATO) was used to realize the low-voltage operation of graphene field-effect transistors (GFETs), in which the graphene was grown by atmospheric pressure chemical vapor deposition (APCVD). Upon modifying the interface between graphene and the dielectric by octadecylphosphonic acid (ODPA), outstanding room-temperature hole mobility up to 5805 cm(2) V(-1) s(-1) and electron mobility of 3232 cm(2) V(-1) s(-1) were obtained in a small gate voltage range from -3.0 V to 3.0 V under a vacuum. Meanwhile, an excellent on/off current ratio of about 8 was achieved. Our studies demonstrate an effective route in which utilizing the low-temperature solution-processed dielectrics can achieve low-voltage and high performance GFETs.
Collapse
|
34
|
He Y, Yu W, Ouyang G. Effect of stepped substrates on the interfacial adhesion properties of graphene membranes. Phys Chem Chem Phys 2014; 16:11390-7. [PMID: 24797681 DOI: 10.1039/c4cp00633j] [Citation(s) in RCA: 14] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
In order to gain a comprehensive understanding of interface adhesion properties involved in adhesion energy and local interface separation between graphene membranes and underlying stepped substrates, we develop an analytic model by considering the total free energy originally from interfacial van der Waals interaction and elastic strain energy stored in the membranes based on an atomic-bond-relaxation consideration. It is found that the interface adhesion energy decreases with increasing membrane thickness. Moreover, as compared to the case of a flat substrate surface, the interface adhesion properties of graphene membranes on stepped surfaces are strongly affected by the substrate surface parameters, including step height, vicinal angle, membrane thickness, terrace width and orientation, etc., implying that the topographic fluctuation of graphene is attributed to the various interface separations at different substrate sites. Our predictions agree reasonably well with computer simulations and experimental observations, which suggest that the developed method can be regarded as an effective method to design the interface adhesion of graphene membranes in graphene-based functional device components.
Collapse
Affiliation(s)
- Yan He
- Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education and Department of Physics, Hunan Normal University, Changsha 410081, China.
| | | | | |
Collapse
|
35
|
Liu L, Niu Z, Zhang L, Chen X. Structural diversity of bulky graphene materials. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2014; 10:2200-2214. [PMID: 24668900 DOI: 10.1002/smll.201400144] [Citation(s) in RCA: 15] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/17/2014] [Revised: 02/12/2014] [Indexed: 06/03/2023]
Abstract
The unique two-dimensional (2D) structure and chemical properties of graphene and its derivatives make it a distinctive nanoscale building block for constructing novel bulky architectures with different dimensions, such as 1D fibers, 2D films and 3D architectures. These bulky graphene materials, depending on the manner in which graphene sheets are assembled, show a variety of fascinating features that cannot be achieved from individual graphene sheet or conventional materials. Thus, over the past several years, considerable effort has been expended in fabricating various structures of bulky graphene materials and developing their corresponding applications. Here, we present a broad and comprehensive overview of the recent developments in expanding the structural diversity of bulky graphene materials and their applications in energy storage and conversion, composites, environmental remediation, etc. Finally, prospects and further developments in this exciting field of bulky graphene materials are also suggested.
Collapse
Affiliation(s)
- Lili Liu
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798
| | | | | | | |
Collapse
|
36
|
Wu P, Zhang W, Li Z, Yang J. Mechanisms of graphene growth on metal surfaces: theoretical perspectives. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2014; 10:2136-2150. [PMID: 24687872 DOI: 10.1002/smll.201303680] [Citation(s) in RCA: 38] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/28/2013] [Revised: 02/26/2014] [Indexed: 06/03/2023]
Abstract
Graphene is an important material with unique electronic properties. Aiming to obtain high quality samples at a large scale, graphene growth on metal surfaces has been widely studied. An important topic in these studies is the atomic scale growth mechanism, which is the precondition for a rational optimization of growth conditions. Theoretical studies have provided useful insights for understanding graphene growth mechanisms, which are reviewed in this article. On the mostly used Cu substrate, graphene growth is found to be more complicated than a simple adsorption-dehydrogenation-growth model. Growth on Ni surface is precipitation dominated. On surfaces with a large lattice mismatch to graphene, epitaxial geometry determin a robust nonlinear growth behavior. Further progresses in understanding graphene growth mechanisms is expected with intense theoretical studies using advanced simulation techniques, which will make a guided design of growth protocols practical.
Collapse
Affiliation(s)
- Ping Wu
- Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | | | | | | |
Collapse
|
37
|
Hu B, Wei Z, Ago H, Jin Y, Xia M, Luo Z, Pan Q, Liu Y. Effects of substrate and transfer on CVD-grown graphene over sapphire-induced Cu films. Sci China Chem 2014. [DOI: 10.1007/s11426-014-5073-3] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/25/2022]
|
38
|
Exploring electronic structure of one-atom thick polycrystalline graphene films: a nano angle resolved photoemission study. Sci Rep 2014; 3:2439. [PMID: 23942471 PMCID: PMC3743056 DOI: 10.1038/srep02439] [Citation(s) in RCA: 41] [Impact Index Per Article: 4.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/10/2013] [Accepted: 07/30/2013] [Indexed: 11/24/2022] Open
Abstract
The ability to produce large, continuous and defect free films of graphene is presently a major challenge for multiple applications. Even though the scalability of graphene films is closely associated to a manifest polycrystalline character, only a few numbers of experiments have explored so far the electronic structure down to single graphene grains. Here we report a high resolution angle and lateral resolved photoelectron spectroscopy (nano-ARPES) study of one-atom thick graphene films on thin copper foils synthesized by chemical vapor deposition. Our results show the robustness of the Dirac relativistic-like electronic spectrum as a function of the size, shape and orientation of the single-crystal pristine grains in the graphene films investigated. Moreover, by mapping grain by grain the electronic dynamics of this unique Dirac system, we show that the single-grain gap-size is 80% smaller than the multi-grain gap recently reported by classical ARPES.
Collapse
|
39
|
Zabet-Khosousi A, Zhao L, Pálová L, Hybertsen MS, Reichman DR, Pasupathy AN, Flynn GW. Segregation of Sublattice Domains in Nitrogen-Doped Graphene. J Am Chem Soc 2014; 136:1391-7. [DOI: 10.1021/ja408463g] [Citation(s) in RCA: 78] [Impact Index Per Article: 7.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/25/2023]
Affiliation(s)
- Amir Zabet-Khosousi
- Department
of Chemistry, Columbia University, New York, New York 10027, United States
| | - Liuyan Zhao
- Department
of Physics, Columbia University, New York, New York 10027, United States
| | - Lucia Pálová
- Department
of Chemistry, Columbia University, New York, New York 10027, United States
| | - Mark S. Hybertsen
- Center
for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - David R. Reichman
- Department
of Chemistry, Columbia University, New York, New York 10027, United States
| | - Abhay N. Pasupathy
- Department
of Physics, Columbia University, New York, New York 10027, United States
| | - George W. Flynn
- Department
of Chemistry, Columbia University, New York, New York 10027, United States
| |
Collapse
|
40
|
Abstract
Since the first reported isolation of graphene by peeling graphite with cellophane tape in 2004, there has been a paradigm shift in research. In just nine years, graphene has had a major impact on fields ranging from physics and chemistry to materials science and engineering leading to a host of interdisciplinary advances in nanotechnology. Graphene is attractive because it possesses many extraordinary characteristics that are a direct consequence of its unique atomic structure, as discussed here. For over a decade, our group has been exploring new routes to synthesize graphene so that this potentially important material can be scaled up for use in practical applications. We have made several significant discoveries starting with the synthesis of few-layer graphene from intercalation/exfoliation reactions that upon sonication produce carbon nanoscrolls. Next, we developed high-throughput methods for producing chemically converted graphene from graphene oxide using either aqueous or anhydrous hydrazine. Recently, we introduced an inexpensive process that uses the laser in an optical drive to deoxygenate graphite oxide layers to create laser scribed graphene. The impetus of this Account is to discuss both synthetic routes to graphene and their applications. The first part highlights both our top-down and bottom-up routes to graphene, which includes intercalation/exfoliation, chemical reduction with hydrazine and other organic reagents, chemical vapor deposition, and laser scribed graphene. In the later part, we emphasize the significance of these contributions to the field and how each approach has afforded us unique opportunities to explore graphene's properties. This has resulted in new applications such as practical chemical sensors, flash memory storage devices, transparent conductors, distributed ignition, and supercapacitors.
Collapse
Affiliation(s)
- Jonathan K. Wassei
- Department of Chemistry & Biochemistry and California Nano Systems Institute, University of California, Los Angeles, California, 90095, United States
| | - Richard B. Kaner
- Department of Chemistry & Biochemistry and California Nano Systems Institute, University of California, Los Angeles, California, 90095, United States
- Department of Materials Science and Engineering and California Nano Systems Institute, University of California, Los Angeles, California, 90095, United States
| |
Collapse
|
41
|
Kidambi P, Bayer BC, Blume R, Wang ZJ, Baehtz C, Weatherup RS, Willinger MG, Schloegl R, Hofmann S. Observing graphene grow: catalyst-graphene interactions during scalable graphene growth on polycrystalline copper. NANO LETTERS 2013; 13:4769-78. [PMID: 24041311 PMCID: PMC3883115 DOI: 10.1021/nl4023572] [Citation(s) in RCA: 45] [Impact Index Per Article: 4.1] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/27/2013] [Revised: 09/10/2013] [Indexed: 05/05/2023]
Abstract
Complementary in situ X-ray photoelectron spectroscopy (XPS), X-ray diffractometry, and environmental scanning electron microscopy are used to fingerprint the entire graphene chemical vapor deposition process on technologically important polycrystalline Cu catalysts to address the current lack of understanding of the underlying fundamental growth mechanisms and catalyst interactions. Graphene forms directly on metallic Cu during the high-temperature hydrocarbon exposure, whereby an upshift in the binding energies of the corresponding C1s XPS core level signatures is indicative of coupling between the Cu catalyst and the growing graphene. Minor carbon uptake into Cu can under certain conditions manifest itself as carbon precipitation upon cooling. Postgrowth, ambient air exposure even at room temperature decouples the graphene from Cu by (reversible) oxygen intercalation. The importance of these dynamic interactions is discussed for graphene growth, processing, and device integration.
Collapse
Affiliation(s)
- Piran
R. Kidambi
- Department
of Engineering, University of Cambridge, Cambridge CB3 0FA, United Kingdom
| | - Bernhard C. Bayer
- Department
of Engineering, University of Cambridge, Cambridge CB3 0FA, United Kingdom
| | - Raoul Blume
- Helmholtz-Zentrum
Berlin für Materialien und Energie, D-12489 Berlin, Germany
| | - Zhu-Jun Wang
- Fritz-Haber-Institut
der Max-Planck-Gesellschaft, D-14195 Berlin-Dahlem, Germany
| | - Carsten Baehtz
- Institute
of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, D-01314 Dresden, Germany
| | - Robert S. Weatherup
- Department
of Engineering, University of Cambridge, Cambridge CB3 0FA, United Kingdom
| | - Marc-Georg Willinger
- Fritz-Haber-Institut
der Max-Planck-Gesellschaft, D-14195 Berlin-Dahlem, Germany
| | - Robert Schloegl
- Fritz-Haber-Institut
der Max-Planck-Gesellschaft, D-14195 Berlin-Dahlem, Germany
| | - Stephan Hofmann
- Department
of Engineering, University of Cambridge, Cambridge CB3 0FA, United Kingdom
| |
Collapse
|
42
|
On the growth mode of two-lobed curvilinear graphene domains at atmospheric pressure. Sci Rep 2013; 3:2571. [PMID: 23999168 PMCID: PMC3759841 DOI: 10.1038/srep02571] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/14/2013] [Accepted: 07/24/2013] [Indexed: 11/08/2022] Open
Abstract
We demonstrate the chemical vapor deposition (CVD) growth of 2-lobed symmetrical curvilinear graphene domains specifically on Cu{100} surface orientations at atmospheric pressure. We utilize electron backscattered diffraction, scanning electron microscopy and Raman spectroscopy to determine an as-yet unexplored growth mode producing such a shape and demonstrate how its growth and morphology are dependent on the underlying Cu crystal structure especially in the high CH4:H2 regime. We show that both monolayer and bilayer curvilinear domains are grown on Cu{100} surfaces; furthermore, we show that characteristic atmospheric pressure CVD hexagonal domains are grown on all other Cu facets with an isotropic growth rate which is more rapid than that on Cu{100}. These findings indicate that the Cu-graphene complex is predominant mechanistically at atmospheric pressure, which is an important step towards tailoring graphene properties via substrate engineering.
Collapse
|
43
|
Zeng C, Song EB, Wang M, Lee S, Torres CM, Tang J, Weiller BH, Wang KL. Vertical graphene-base hot-electron transistor. NANO LETTERS 2013; 13:2370-2375. [PMID: 23668939 DOI: 10.1021/nl304541s] [Citation(s) in RCA: 16] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
We demonstrate vertical graphene-base hot-electron transistors (GB-HETs) with a variety of structures and material parameters. Our GB-HETs exhibit a current saturation with a high current on-off ratio (>10(5)), which results from both the vertical transport of hot electrons across the ultrathin graphene base and the filtering of hot electrons through a built-in energy barrier. The influences of the materials and their thicknesses used for the tunneling and filtering barriers on the common-base current gain α are studied. The optimization of the SiO2 thickness and using HfO2 as the filtering barrier significantly improves the common-base current gain α by more than 2 orders of magnitude. The results demonstrate that GB-HETs have a great potential for high-frequency, high-speed, and high-density integrated circuits.
Collapse
Affiliation(s)
- Caifu Zeng
- Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA
| | | | | | | | | | | | | | | |
Collapse
|
44
|
Martin-Olmos C, Rasool HI, Weiller BH, Gimzewski JK. Graphene MEMS: AFM probe performance improvement. ACS NANO 2013; 7:4164-4170. [PMID: 23560447 DOI: 10.1021/nn400557b] [Citation(s) in RCA: 16] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
We explore the feasibility of growing a continuous layer of graphene in prepatterned substrates, like an engineered silicon wafer, and we apply this as a mold for the fabrication of AFM probes. This fabrication method proves the fabrication of SU-8 devices coated with graphene in a full-wafer parallel technology and with high yield. It also demonstrates that graphene coating enhances the functionality of SU-8 probes, turning them conductive and more resistant to wear. Furthermore, it opens new experimental possibilities such as studying graphene-graphene interaction at the nanoscale with the precision of an AFM or the exploration of properties in nonplanar graphene layers.
Collapse
Affiliation(s)
- Cristina Martin-Olmos
- Department of Chemistry and Biochemistry, University of California at Los Angeles, 607 Charles E Young Drive East, Los Angeles, California 90095, United States
| | | | | | | |
Collapse
|
45
|
Niu T, Zhou M, Zhang J, Feng Y, Chen W. Growth Intermediates for CVD Graphene on Cu(111): Carbon Clusters and Defective Graphene. J Am Chem Soc 2013; 135:8409-14. [DOI: 10.1021/ja403583s] [Citation(s) in RCA: 116] [Impact Index Per Article: 10.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/29/2023]
Affiliation(s)
- Tianchao Niu
- Department of Chemistry, National University of Singapore, 3 Science Drive 3,
117543, Singapore
| | - Miao Zhou
- Department of Physics, National University of Singapore, 2 Science Drive 3,
117542, Singapore
| | - Jialin Zhang
- Department of Physics, National University of Singapore, 2 Science Drive 3,
117542, Singapore
| | - Yuanping Feng
- Department of Physics, National University of Singapore, 2 Science Drive 3,
117542, Singapore
| | - Wei Chen
- Department of Chemistry, National University of Singapore, 3 Science Drive 3,
117543, Singapore
- Department of Physics, National University of Singapore, 2 Science Drive 3,
117542, Singapore
| |
Collapse
|
46
|
Song J, Kam FY, Png RQ, Seah WL, Zhuo JM, Lim GK, Ho PKH, Chua LL. A general method for transferring graphene onto soft surfaces. NATURE NANOTECHNOLOGY 2013; 8:356-62. [PMID: 23624698 DOI: 10.1038/nnano.2013.63] [Citation(s) in RCA: 110] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/24/2012] [Accepted: 03/19/2013] [Indexed: 05/07/2023]
Abstract
Recent advances in chemical vapour deposition have led to the fabrication of large graphene sheets on metal foils for use in research and development. However, further breakthroughs are required in the way these graphenes are transferred from their growth substrates onto the final substrate. Although various methods have been developed, as yet there is no general way to reliably transfer graphene onto arbitrary surfaces, such as 'soft' ones. Here, we report a method that allows the graphene to be transferred with high fidelity at the desired location on almost all surfaces, including fragile polymer thin films and hydrophobic surfaces. The method relies on a sacrificial 'self-releasing' polymer layer placed between a conventional polydimethylsiloxane elastomer stamp and the graphene that is to be transferred. This self-releasing layer provides a low work of adhesion on the stamp, which facilitates delamination of the graphene and its placement on the new substrate. To demonstrate the generality and reliability of our method, we fabricate high field-strength polymer capacitors using graphene as the top contact over a polymer dielectric thin film. These capacitors show superior dielectric breakdown characteristics compared with those made with evaporated metal top contacts. Furthermore, we fabricate low-operation-voltage organic field-effect transistors using graphene as the gate electrode placed over a thin polymer gate dielectric layer. We finally demonstrate an artificial graphite intercalation compound by stacking alternate monolayers of graphene and 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ). This compound, which comprises graphene sheets p-doped by partial hole transfer from the F4TCNQ, shows a high and remarkably stable hole conductivity, even when heated in the presence of moisture.
Collapse
Affiliation(s)
- Jie Song
- Department of Chemistry, National University of Singapore, Lower Kent Ridge Road, S117543, Singapore
| | | | | | | | | | | | | | | |
Collapse
|
47
|
Lewis AM, Derby B, Kinloch IA. Influence of gas phase equilibria on the chemical vapor deposition of graphene. ACS NANO 2013; 7:3104-3117. [PMID: 23484546 DOI: 10.1021/nn305223y] [Citation(s) in RCA: 27] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/01/2023]
Abstract
We have investigated the influence of gas phase chemistry on the chemical vapor deposition of graphene in a hot wall reactor. A new extended parameter space for graphene growth was defined through literature review and experimentation at low pressures (≥0.001 mbar). The deposited films were characterized by scanning electron microscopy, Raman spectroscopy, and dark field optical microscopy, with the latter showing promise as a rapid and nondestructive characterization technique for graphene films. The equilibrium gas compositions have been calculated across this parameter space. Correlations between the graphene films grown and prevalent species in the equilibrium gas phase revealed that deposition conditions associated with a high acetylene equilibrium concentration lead to good quality graphene deposition, and conditions that stabilize large hydrocarbon molecules in the gas phase result in films with multiple defects. The transition between lobed and hexagonal graphene islands was found to be linked to the concentration of the monatomic hydrogen radical, with low concentrations associated with hexagonal islands.
Collapse
Affiliation(s)
- Amanda M Lewis
- School of Materials, University of Manchester, Grosvenor Street, M13 9PL, UK
| | | | | |
Collapse
|
48
|
Funaro M, Sarno M, Ciambelli P, Altavilla C, Proto A. Real time radiation dosimeters based on vertically aligned multiwall carbon nanotubes and graphene. NANOTECHNOLOGY 2013; 24:075704. [PMID: 23358596 DOI: 10.1088/0957-4484/24/7/075704] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/01/2023]
Abstract
Measurements of the absorbed dose and quality assurance programs play an important role in radiotherapy. Ionization chambers (CIs) are considered the most important dosimeters for their high accuracy, practicality and reliability, allowing absolute dose measurements. However, they have a relative large physical size, which limits their spatial resolution, and require a high bias voltage to achieve an acceptable collection of charges, excluding their use for in vivo dosimetry. In this paper, we propose new real time radiation detectors with electrodes based on graphene or vertically aligned multiwall carbon nanotubes (MWCNTs). We have investigated their charge collection efficiency and compared their performance with electrodes made of a conventional material. Moreover, in order to highlight the effect of nanocarbons, reference radiation detectors were also tested. The proposed dosimeters display an excellent linear response to dose and collect more charge than reference ones at a standard bias voltage, permitting the construction of miniaturized CIs. Moreover, an MWCNT based CI gives the best charge collection efficiency and it enables working also to lower bias voltages and zero volts, allowing in vivo applications. Graphene based CIs show better performance with respect to reference dosimeters at a standard bias voltage. However, at decreasing bias voltage the charge collection efficiency becomes worse if compared to a reference detector, likely due to graphene's semiconducting behavior.
Collapse
Affiliation(s)
- Maria Funaro
- Department of Chemistry and Biology, University of Salerno, Via Ponte Don Melillo, Fisciano (SA), Italy
| | | | | | | | | |
Collapse
|
49
|
Wang Q, Wei L, Sullivan M, Yang SW, Chen Y. Graphene layers on Cu and Ni (111) surfaces in layer controlled graphene growth. RSC Adv 2013. [DOI: 10.1039/c2ra23105k] [Citation(s) in RCA: 32] [Impact Index Per Article: 2.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
|
50
|
Yang F, Liu Y, Wu W, Chen W, Gao L, Sun J. A facile method to observe graphene growth on copper foil. NANOTECHNOLOGY 2012; 23:475705. [PMID: 23103913 DOI: 10.1088/0957-4484/23/47/475705] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/01/2023]
Abstract
A novel scanning electron microscope (SEM) method is presented for high contrast identification of each layer of pyramidal graphene domains grown on copper. We obtained SEM images by combining the advantages of the high resolution property of the secondary electron signal and the elemental sensitivity of the backscattering electron signal. Through this method, we investigated the difference in the growth mechanisms of mono-layer and few-layer graphene. Due to different lattice mismatches, both the surface adsorption process and the epitaxial growth process existed under the atmospheric growth conditions. Moreover, the copper oxidation process can be easily discovered. It is obvious from the SEM images that the graphene greatly delayed the oxidation process of the copper surface. Finally, the nucleation and growth speed of graphene domains was found to depend on the linear array distribution of surface ledges and terraces of annealed rolled copper foil. This result explains the linear rows of graphene during the growth process and accords with theoretical results.
Collapse
Affiliation(s)
- Fan Yang
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
| | | | | | | | | | | |
Collapse
|