Photoresponse of an electrically tunable ambipolar graphene infrared thermocouple

Wireless High Temperature Sensing Chipless Tag Based on a Diamond Ring Resonator

A passive wireless sensor is designed for real-time monitoring of a high temperature environment. The sensor is composed of a double diamond split rings resonant structure and an alumina ceramic substrate with a size of 23 × 23 × 0.5 mm³. The alumina ceramic substrate is selected as the temperature sensing material. The principle is that the permittivity of the alumina ceramic changes with the temperature and the resonant frequency of the sensor shifts accordingly. Its permittivity bridges the relation between the temperature and resonant frequency. Therefore, real time temperatures can be measured by monitoring the resonant frequency. The simulation results show that the designed sensor can monitor temperatures in the range 200~1000 °C corresponding to a resonant frequency of 6.79~6.49 GHz with shifting 300 MHz and a sensitivity of 0.375 MHz/°C, and demonstrate the quasi-linear relation between resonant frequency and temperature. The sensor has the advantages of wide temperature range, good sensitivity, low cost and small size, which gives it superiority in high temperature applications.

A multimode photodetector with polarization-dependent near-infrared responsivity using the tunable split-dual gates control

As the limited carrier densities in atomic thin materials can be well controlled by electrostatic gates, p-n junctions based on two-dimensional materials in the coplanar split-gate configuration can work as photodetectors or light-emitting diodes. These coplanar gates can be fabricated in a simple one-step lithography process and are frequently used in hybrid integration with on-chip optical structures. However, the polarization-dependent responsivity of such a configuration is less explored in the near-infrared band, and a clear understanding is still missing. Here we fabricate near-infrared tunable multiple modes twisted bilayer graphene photodetector enabled by the coplanar split-gate control and confirm that the photothermoelectric effect governs the photovoltage mechanism of the p-n junction mode. Our study also elucidates that the discrepancy of the responsivities under different linear polarizations is owing to the different cavity modes and provides a valuable example for designing chip-integrated optoelectronic devices.

•

Design of coplanar split-gated controlled multimode near-infrared photodetector

•

Verification of the photothermoelectric mechanism of the p-n junction

•

Understanding the reason for the polarization-dependent responsivity

Hot carriers in graphene - fundamentals and applications

Hot charge carriers in graphene exhibit fascinating physical phenomena, whose understanding has improved greatly over the past decade. They have distinctly different physical properties compared to, for example, hot carriers in conventional metals. This is predominantly the result of graphene's linear energy-momentum dispersion, its phonon properties, its all-interface character, and the tunability of its carrier density down to very small values, and from electron- to hole-doping. Since a few years, we have witnessed an increasing interest in technological applications enabled by hot carriers in graphene. Of particular interest are optical and optoelectronic applications, where hot carriers are used to detect (photodetection), convert (nonlinear photonics), or emit (luminescence) light. Graphene-enabled systems in these application areas could find widespread use and have a disruptive impact, for example in the field of data communication, high-frequency electronics, and industrial quality control. The aim of this review is to provide an overview of the most relevant physics and working principles that are relevant for applications exploiting hot carriers in graphene.

Plasmonic antenna coupling to hyperbolic phonon-polaritons for sensitive and fast mid-infrared photodetection with graphene

Integrating and manipulating the nano-optoelectronic properties of Van der Waals heterostructures can enable unprecedented platforms for photodetection and sensing. The main challenge of infrared photodetectors is to funnel the light into a small nanoscale active area and efficiently convert it into an electrical signal. Here, we overcome all of those challenges in one device, by efficient coupling of a plasmonic antenna to hyperbolic phonon-polaritons in hexagonal-BN to highly concentrate mid-infrared light into a graphene pn-junction. We balance the interplay of the absorption, electrical and thermal conductivity of graphene via the device geometry. This approach yields remarkable device performance featuring room temperature high sensitivity (NEP of 82 pW[Formula: see text]) and fast rise time of 17 nanoseconds (setup-limited), among others, hence achieving a combination currently not present in the state-of-the-art graphene and commercial mid-infrared detectors. We also develop a multiphysics model that shows very good quantitative agreement with our experimental results and reveals the different contributions to our photoresponse, thus paving the way for further improvement of these types of photodetectors even beyond mid-infrared range.

Progress of Photodetectors Based on the Photothermoelectric Effect

High-performance uncooled photodetectors operating in the long-wavelength infrared and terahertz regimes are highly demanded in the military and civilian fields. Photothermoelectric (PTE) detectors, which combine photothermal and thermoelectric conversion processes, can realize ultra-broadband photodetection without the requirement of a cooling unit and external bias. In the last few decades, the responsivity and speed of PTE-based photodetectors have made impressive progress with the discovery of novel thermoelectric materials and the development of nanophotonics. In particular, by introducing hot-carrier transport into low-dimensional material-based PTE detectors, the response time has been successfully pushed down to the picosecond level. Furthermore, with the assistance of surface plasmon, antenna, and phonon absorption, the responsivity of PTE detectors can be significantly enhanced. Beyond the photodetection, PTE effect can also be utilized to probe exotic physical phenomena in spintronics and valleytronics. Herein, recent advances in PTE detectors are summarized, and some potential strategies to further improve the performance are proposed.

Waveguide-Integrated, Plasmonic Enhanced Graphene Photodetectors

We present a micrometer-scale, on-chip integrated, plasmonic enhanced graphene photodetector (GPD) for telecom wavelengths operating at zero dark current. The GPD is designed to directly generate a photovoltage by the photothermoelectric effect. It is made of chemical vapor deposited single layer graphene, and has an external responsivity ∼12.2 V/W with a 3 dB bandwidth ∼42 GHz. We utilize Au split-gates to electrostatically create a p-n-junction and simultaneously guide a surface plasmon polariton gap-mode. This increases the light-graphene interaction and optical absorption and results in an increased electronic temperature and steeper temperature gradient across the GPD channel. This paves the way to compact, on-chip integrated, power-efficient graphene based photodetectors for receivers in tele- and datacom modules.

Competing Mechanisms for Photocurrent Induced at the Monolayer-Multilayer Graphene Junction

Graphene is characterized by demonstrated unique properties for potential novel applications in photodetection operated in the frequency range from ultraviolet to terahertz. To date, detailed work on identifying the origin of photoresponse in graphene is still ongoing. Here, scanning photocurrent microscopy to explore the nature of photocurrent generated at the monolayer-multilayer graphene junction is employed. It is found that the contributing photocurrent mechanism relies on the mismatch of the Dirac points between the monolayer and multilayer graphene. For overlapping Dirac points, only photothermoelectric effect (PTE) is observed at the junction. When they do not coincide, a different photocurrent due to photovoltaic effect (PVE) appears and becomes more pronounced with larger separation of the Dirac points. While only PTE is reported for a monolayer-bilayer graphene junction in the literature, this work confirms the coexistence of PTE and PVE, thereby extending the understanding of photocurrent in graphene-based heterojunctions.

Bipolar Photothermoelectric Effect Across Energy Filters in Single Nanowires

The photothermoelectric (PTE) effect uses nonuniform absorption of light to produce a voltage via the Seebeck effect and is of interest for optical sensing and solar-to-electric energy conversion. However, the utility of PTE devices reported to date has been limited by the need to use a tightly focused laser spot to achieve the required, nonuniform illumination and by their dependence upon the Seebeck coefficients of the constituent materials, which exhibit limited tunability and, generally, low values. Here, we use InAs/InP heterostructure nanowires to overcome these limitations: first, we use naturally occurring absorption "hot spots" at wave mode maxima within the nanowire to achieve sharp boundaries between heated and unheated subwavelength regions of high and low absorption, allowing us to use global illumination; second, we employ carrier energy-filtering heterostructures to achieve a high Seebeck coefficient that is tunable by heterostructure design. Using these methods, we demonstrate PTE voltages of hundreds of millivolts at room temperature from a globally illuminated nanowire device. Furthermore, we find PTE currents and voltages that change polarity as a function of the wavelength of illumination due to spatial shifting of subwavelength absorption hot spots. These results indicate the feasibility of designing new types of PTE-based photodetectors, photothermoelectrics, and hot-carrier solar cells using nanowires.

Enhanced broadband photoresponse of substrate-free reduced graphene oxide photodetectors

Broadband responsivity enhancement of substrate-free device is achieved from the ultraviolet to near-infrared range just by removing the substrate of rGO film device.

Photoinduced Nonlinear Mixing of Terahertz Dipole Resonances in Graphene Metadevices

The first experimental demonstration of nonlinear terahertz difference-frequency generation in a hybrid graphene metadevice is reported. Decades of research have revealed that terahertz-wave generation is impossible in single-layer graphene. This limitation is overcome and nonlinear terahertz generation by ultra-short optical pulse injection is demonstrated. This device is an essential step toward atomically thin, nonlinear terahertz optoelectronic components.

Infrared Photodetection Based on Colloidal Quantum-Dot Films with High Mobility and Optical Absorption up to THz

Infrared thermal imaging devices rely on narrow band gap semiconductors grown by physical methods such as molecular beam epitaxy and chemical vapor deposition. These technologies are expensive, and infrared detectors remain limited to defense and scientific applications. Colloidal quantum dots (QDs) offer a low cost alternative to infrared detector by combining inexpensive synthesis and an ease of processing, but their performances are so far limited, in terms of both wavelength and sensitivity. Herein we propose a new generation of colloidal QD-based photodetectors, which demonstrate detectivity improved by 2 orders of magnitude, and optical absorption that can be continuously tuned between 3 and 20 μm. These photodetectors are based on the novel synthesis of n-doped HgSe colloidal QDs whose size can be tuned continuously between 5 and 40 nm, and on their assembly into solid nanocrystal films with mobilities that can reach up to 100 cm(2) V(-1) s(-1). These devices can be operated at room temperature with the same level of performance as the previous generation of devices when operated at liquid nitrogen temperature. HgSe QDs can be synthesized in large scale (>10 g per batch), and we show that HgSe films can be processed to form a large scale array of pixels. Taken together, these results pave the way for the development of the next generation mid- and far-infrared low-cost detectors and camera.

Effective particle–hole symmetry breaking, quasi-bond state engineering and optical absorption in graphene based gated dot–ring nanostructures

We have studied the nature- and character- switching of relativistic bound states in quantum dot–ring structures produced by a set of circular concentric metallic gates on a graphene sheet placed over a substrate.

Graphene-Based Thermopile for Thermal Imaging Applications

In this work, we leverage graphene's unique tunable Seebeck coefficient for the demonstration of a graphene-based thermal imaging system. By integrating graphene based photothermo-electric detectors with micromachined silicon nitride membranes, we are able to achieve room temperature responsivities on the order of ~7-9 V/W (at λ = 10.6 μm), with a time constant of ~23 ms. The large responsivities, due to the combination of thermal isolation and broadband infrared absorption from the underlying SiN membrane, have enabled detection as well as stand-off imaging of an incoherent blackbody target (300-500 K). By comparing the fundamental achievable performance of these graphene-based thermopiles with standard thermocouple materials, we extrapolate that graphene's high carrier mobility can enable improved performances with respect to two main figures of merit for infrared detectors: detectivity (>8 × 10(8) cm Hz(1/2) W(-1)) and noise equivalent temperature difference (<100 mK). Furthermore, even average graphene carrier mobility (<1000 cm(2) V(-1) s(-1)) is still sufficient to detect the emitted thermal radiation from a human target.

Pulsed Near-IR Photoresponse in a Bi-metal Contacted Graphene Photodetector

We use an ultra-fast near-infrared pulse coincidence technique to study the time, temperature, and power dependence of the photoresponse of a bi-metal contacted graphene photodetector. We observe two components of the photovoltage signal. One component is gate-voltage dependent, linear in power at room temperature and sub-linear at low temperature-consistent with the hot-electron photothermoelectric effect due to absorption in the graphene. The power dependence is consistent with supercollision-dominated cooling in graphene. The other component is gate-voltage independent and linear in temperature and power, which we interpret as due to thermoelectricity of the metal electrodes due to differential light absorption.

Flexible Infrared Responsive Multi-Walled Carbon Nanotube/Form-Stable Phase Change Material Nanocomposites

Flexible infrared (IR)-responsive materials, such as polymer nanocomposites, that exhibit high levels of IR responses and short response times are highly desirable for various IR sensing applications. However, the IR-induced photoresponses of carbon nanotube (CNT)/polymer nanocomposites are typically limited to 25%. Herein, we report on a family of unique nanocomposite films consisting of multi-walled carbon nanotubes (MWCNTs) uniformly distributed in a form-stable phase change material (PCM) that exhibited rapid, dramatic, reversible, and cyclic IR-regulated responses in air. The 3 wt % MWCNT/PCM nanocomposite films demonstrated cyclic, IR-regulated on/off electrical conductivity ratios of 11.6 ± 0.6 and 570.0 ± 70.5 times at IR powers of 7.3 and 23.6 mW/mm(2), respectively. The excellent performances exhibited by the MWCNT/PCM nanocomposite films were largely attributed to the IR-regulated cyclic and reversible form-stable phase transitions occurring in the PCM matrix due to MWCNT's excellent photoabsorption and thermal conversion capabilities, which subsequently affected the thickness of the interfacial PCM between adjacent conductive MWCNTs and thus the electron tunneling efficiency between the MWCNTs. Our findings suggest that these unique MWCNT/PCM nanocomposites offer promising new options for high-performance and flexible optoelectronic devices, including thermal imaging, IR sensing, and optical communication.

Tunable Electrical and Optical Characteristics in Monolayer Graphene and Few-Layer MoS2 Heterostructure Devices

Lateral and vertical two-dimensional heterostructure devices, in particular graphene-MoS2, have attracted profound interest as they offer additional functionalities over normal two-dimensional devices. Here, we have carried out electrical and optical characterization of graphene-MoS2 heterostructure. The few-layer MoS2 devices with metal electrode at one end and monolayer graphene electrode at the other end show nonlinearity in drain current with drain voltage sweep due to asymmetrical Schottky barrier height at the contacts and can be modulated with an external gate field. The doping effect of MoS2 on graphene was observed as double Dirac points in the transfer characteristics of the graphene field-effect transistor (FET) with a few-layer MoS2 overlapping the middle part of the channel, whereas the underlapping of graphene have negligible effect on MoS2 FET characteristics, which showed typical n-type behavior. The heterostructure also exhibits a strongest optical response for 520 nm wavelength, which decreases with higher wavelengths. Another distinct feature observed in the heterostructure is the peak in the photocurrent around zero gate voltage. This peak is distinguished from conventional MoS2 FETs, which show a continuous increase in photocurrent with back-gate voltage. These results offer significant insight and further enhance the understanding of the graphene-MoS2 heterostructure.

Energy flows in graphene: hot carrier dynamics and cooling

Long lifetimes of hot carriers can lead to qualitatively new types of responses in materials. The magnitude and time scales for these responses reflect the mechanisms governing energy flows. We examine the microscopics of two processes which are key for energy transport, focusing on the unusual behavior arising due to graphene's unique combination of material properties. One is hot carrier generation in its photoexcitation dynamics, where hot carriers multiply through an Auger type carrier-carrier scattering cascade. The hot-carrier generation manifests itself through elevated electronic temperatures which can be accessed in a variety of ways, in particular optical conductivity measurements. Another process of high interest is electron-lattice cooling. We survey different cooling pathways and discuss the cooling bottleneck arising for the momentum-conserving electron-phonon scattering pathway. We show how this bottleneck can be relieved by higher-order collisions—supercollisions—and examine the variety of supercollision processes that can occur in graphene.

Gateless patterning of epitaxial graphene by local intercalation

We present a technique to pattern the charge density of a large-area epitaxial graphene sheet locally without using metallic gates. Instead, local intercalation of the graphene-substrate interface can selectively be established in the vicinity of graphene edges or predefined voids. It provides changes of the work function of several hundred meV, corresponding to a conversion from n-type to p-type charge carriers. This assignment is supported by photoelectron spectroscopy, scanning tunneling microscopy, scanning electron microscopy and Hall effect measurements. The technique introduces materials contrast to a graphene sheet in a variety of geometries and thus allows for novel experiments and novel functionalities.

Phonon-mediated mid-infrared photoresponse of graphene

The photoresponse of graphene at mid-infrared frequencies is of high technological interest and is governed by fundamentally different underlying physics than the photoresponse at visible frequencies, as the energy of the photons and substrate phonons involved have comparable energies. Here, we perform a spectrally resolved study of the graphene photoresponse for mid-infrared light by measuring spatially resolved photocurrent over a broad frequency range (1000-1600 cm(-1)). We unveil the different mechanisms that give rise to photocurrent generation in graphene on a polar substrate. In particular, we find an enhancement of the photoresponse when the light excites bulk or surface phonons of the SiO2 substrate. This work paves the way for the development of graphene-based mid-infrared thermal sensing technology.