Electrical transport and field-effect transistors using inkjet-printed SWCNT films having different functional side groups

A Review on Sustainable Inks for Printed Electronics: Materials for Conductive, Dielectric and Piezoelectric Sustainable Inks

In the last decades, the demand for electronics and, therefore, electronic waste, has increased. To reduce this electronic waste and the impact of this sector on the environment, it is necessary to develop biodegradable systems using naturally produced materials with low impact on the environment or systems that can degrade in a certain period. One way to manufacture these types of systems is by using printed electronics because the inks and the substrates used are sustainable. Printed electronics involve different methods of deposition, such as screen printing or inkjet printing. Depending on the method of deposition selected, the developed inks should have different properties, such as viscosity or solid content. To produce sustainable inks, it is necessary to ensure that most of the materials used in the formulation are biobased, biodegradable, or not considered critical raw materials. In this review, different inks for inkjet printing or screen printing that are considered sustainable, and the materials that can be used to formulate them, are collected. Printed electronics need inks with different functionalities, which can be mainly classified into three groups: conductive, dielectric, or piezoelectric inks. Materials need to be selected depending on the ink's final purpose. For example, functional materials such as carbon or biobased silver should be used to secure the conductivity of an ink, a material with dielectric properties could be used to develop a dielectric ink, or materials that present piezoelectric properties could be mixed with different binders to develop a piezoelectric ink. A good combination of all the components selected must be achieved to ensure the proper features of each ink.

Applications, fluid mechanics, and colloidal science of carbon-nanotube-based 3D printable inks

Additive manufacturing, also known as 3D printing (3DP), is a novel and developing technology, which has a wide range of industrial and scientific applications. This technology has continuously progressed over the past several decades, with improvement in productivity, resolution of the printed features, achievement of more and more complex shapes and topographies, scalability of the printed components and devices, and discovery of new printing materials with multi-functional capabilities. Among these newly developed printing materials, carbon-nanotubes (CNT) based inks, with their remarkable mechanical, electrical, and thermal properties, have emerged as an extremely attractive option. Various formulae of CNT-based ink have been developed, including CNT-nano-particle inks, CNT-polymer inks, and CNT-based non-nanocomposite inks (i.e., CNT ink that is not in a form where CNT particles are suspended in a polymer matrix). Various types of sensors as well as soft and smart electronic devices with a multitude of applications have been fabricated with CNT-based inks by employing different 3DP methods including syringe printing (SP), aerosol-jet printing (AJP), fused deposition modeling (FDM), and stereolithography (SLA). Despite such progress, there is inadequate literature on the various fluid mechanics and colloidal science aspects associated with the printability and property-tunability of nanoparticulate inks, specifically CNT-based inks. This review article, therefore, will focus on the formulation, dispersion, and the associated fluid mechanics and the colloidal science of 3D printable CNT-based inks. This article will first focus on the different examples where 3DP has been employed for printing CNT-based inks for a multitude of applications. Following that, we shall highlight the various key fluid mechanics and colloidal science issues that are central and vital to printing with such inks. Finally, the article will point out the open existing challenges and scope of future work on this topic.

Precise Deposition of Carbon Nanotube Bundles by Inkjet-Printing on a CMOS-Compatible Platform

Carbon nanotubes (CNTs) are ultimately small structures, attractive for future nanoelectronics. CNT-bundles on Si nanostructures can offer an alternative pathway to build hybrid CMOS-compatible devices. To develop a simple method of using such CNT-bundles as transistor channels, we fabricated semiconductor single-walled CNT field-effect transistors using inkjet printing on a CMOS-compatible platform. We investigated a method of producing stable CNT solutions without surfactants, allowing for CNT debundling and dispersion. An inkjet-printing system disperses CNT-networks with ultimately low density (down to discrete CNT-bundles) in Al source-drain gaps of transistors. Despite the small number of networks and random positions, such CNT-bundles provide paths to the flow current. For enhanced controllability, we also demonstrate the manipulation of CNT-networks using an AFM technique.

Printable inks and deformable electronic array devices

Deformable printed electronic array devices are expected to revolutionize next-generation electronics. However, although remarkable technological advances in printable inks and deformable electronic array devices have recently been achieved, technical challenges remain to commercialize these technologies. In this review article a brief introduction to printing methods highlighting significant research studies on ink formation for conductors, semiconductors, and insulators is provided, and the structural design and successful printing strategies of deformable electronic array devices are described. Successful device demonstrations are presented in the applications of passive- and active-matrix array devices. Finally, perspectives and technological challenges to be achieved are pointed out to print practically available deformable devices.

Bioplastics and Carbon-Based Sustainable Materials, Components, and Devices: Toward Green Electronics

The continuously growing number of short-life electronics equipment inherently results in a massive amount of problematic waste, which poses risks of environmental pollution, endangers human health, and causes socioeconomic problems. Hence, to mitigate these negative impacts, it is our common interest to substitute conventional materials (polymers and metals) used in electronics devices with their environmentally benign renewable counterparts, wherever possible, while considering the aspects of functionality, manufacturability, and cost. To support such an effort, in this study, we explore the use of biodegradable bioplastics, such as polylactic acid (PLA), its blends with polyhydroxybutyrate (PHB) and composites with pyrolyzed lignin (PL), and multiwalled carbon nanotubes (MWCNTs), in conjunction with processes typical in the fabrication of electronics components, including plasma treatment, dip coating, inkjet and screen printing, as well as hot mixing, extrusion, and molding. We show that after a short argon plasma treatment of the surface of hot-blown PLA-PHB blend films, percolating networks of single-walled carbon nanotubes (SWCNTs) having sheet resistance well below 1 kΩ/□ can be deposited by dip coating to make electrode plates of capacitive touch sensors. We also demonstrate that the bioplastic films, as flexible dielectric substrates, are suitable for depositing conductive micropatterns of SWCNTs and Ag (1 kΩ/□ and 1 Ω/□, respectively) by means of inkjet and screen printing, with potential in printed circuit board applications. In addition, we exemplify compounded and molded composites of PLA with PL and MWCNTs as excellent candidates for electromagnetic interference shielding materials in the K-band radio frequencies (18.0-26.5 GHz) with shielding effectiveness of up to 40 and 46 dB, respectively.

Inkjet-Deposited Single-Wall Carbon Nanotube Micropatterns on Stretchable PDMS-Ag Substrate-Electrode Structures for Piezoresistive Strain Sensing

Printed piezoresistive strain sensors based on stretchable roll-to-roll screen-printed silver electrodes on polydimethylsiloxane substrates and inkjet-deposited single-wall carbon nanotube micropatterns are demonstrated in this work. With the optimization of surface wetting and inkjet printing parameters, well-defined microscopic line patterns of the nanotubes with a sheet resistance of <100 Ω/□ could be deposited between stretchable Ag electrodes on the plasma-treated substrate. The developed stretchable devices are highly sensitive to tensile strain with a gauge factor of up to 400 and a pressure sensitivity of ∼0.09 Pa^-1, respond to bending down to a radius of 1.5 mm, and are suitable for mounting on the skin to monitor and resolve various movements of the human body such as cardiac cycle, breathing, and finger flexing. This study indicates that inkjet deposition of nanomaterials can complement well other printing technologies to produce flexible and stretchable devices in a versatile manner.

Exciton effect in new generation of carbon nanotubes: graphdiyne nanotubes

Graphdiyne-based nanotubes (GDNTs) are a novel type of carbon nanotubes. While conventional carbon nanotubes (CNTs) are generated by rolling graphene sheets, GDNTs are generated by rolling sheets that are similar to graphene but where the edges are elongated by the introduction of additional acetylene bonds between vertices (C₆ aromatic rings). Such nanotubes are predicted to have many useful practical applications, but a thorough understanding of the relationship between their structure and their physical properties is still missing. We present a theoretical study of the electronic and optical properties of GDNTs. The structural, electronic, and optical properties of GDNTs with different diameters (i.e., 2-10 additional acetylene bonds) have been studied systematically by using density function theory (DFT) and self-consistent charge density functional tight-binding (SCC-DFTB) and by solving the Bethe-Salpeter equation (BSE), with and without considering the electron-hole interactions. The results indicate that the GDNTs are semiconductors with the direct band gap in close range, which is beneficial for photoelectronic devices and applications. Moreover, the absorption spectra of the GDNTs with different edge structures, (armchair, and zigzag) revealed little differences between the optical spectra of armchair and zigzag GDNTs, which could mean that fine separation between those structures (a process that is likely difficult and expensive in practice) will not be necessary. Importantly, the nanotubes were highly stable based on their cohesive energies, and their exciton binding energies were as large as about ~ 1 eV. From a methodological point of view, SCC-DFTB was found to be in agreement with more elaborate DFT calculations for most systems. Graphical abstract.

Inkjet-Printed Carbon Nanotubes for Fabricating a Spoof Fingerprint on Paper

A spoof fingerprint was fabricated on paper and applied for a spoofing attack to unlock a smartphone on which a capacitive array of sensors had been embedded with a fingerprint recognition algorithm. Using an inkjet printer with an ink made of carbon nanotubes (CNTs), we printed a spoof fingerprint having an electrical and geometric pattern of ridges and furrows comparable to that of the real fingerprint. With this printed spoof fingerprint, we were able to unlock a smartphone successfully; this was due to the good quality of the printed CNT material, which provided electrical conductivities and structural patterns similar to those of the real fingerprint. This result confirms that inkjet-printing CNTs to fabricate a spoof fingerprint on paper is an easy, simple spoofing route from the real fingerprint and suggests a new method for outputting the physical ridges and furrows on a two-dimensional plane.

Printed Thin-Film Transistors: Research from China

Thin-film transistors (TFTs) have experienced tremendous development during the past decades and show great promising applications in flat displays, sensors, radio frequency identification tags, logic circuit, and so on. The printed TFTs are the key components for rapid development and commercialization of printed electronics. The researchers in China play important roles to accelerate the development and commercialization of printed TFTs. In this review, we comprehensively summarize the research progress of printed TFTs on rigid and flexible substrates from China. The review will focus on printing techniques of TFTs, printed TFT components including semiconductors, dielectrics and electrodes, as well as fully printed TFTs and printed flexible TFTs. Furthermore, perspectives on the remaining challenges and future developments are proposed.

Green Processing of Carbon Nanomaterials

Carbon nanomaterials (CNMs) from fullerenes, carbon nanotubes, and graphene are promising carbon allotropes for various applications such as energy-conversion devices and biosensors. Because pristine CNMs show substantial van der Waals interactions and a hydrophobic nature, precipitation is observed immediately in most organic solvents and water. This inevitable aggregation leads to poor processability and diminishes the intrinsic properties of the CNMs. Highly toxic and hazardous chemicals are used for chemical and physical modification of CNMs, even though efficient dispersed solutions are obtained. The development of an environmentally friendly dispersion method for both safe and practical processing is a great challenge. Recent green processing approaches for the manipulation of CNMs using chemical and physical modification are highlighted. A summary of the current research progress on: i) energy-efficient and less-toxic chemical modification of CNMs using covalent-bonding functionality and ii) non-covalent-bonding methodologies through physical modification using green solvents and dispersants, and chemical-free mechanical stimuli is provided. Based on these experimental studies, recent advances and challenges for the potential application of green-processable energy-conversion and biological devices are provided. Finally, a conclusion section is provided summarizing the insights from the present studies as well as some future perspectives.

Selective Conversion from p-Type to n-Type of Printed Bottom-Gate Carbon Nanotube Thin-Film Transistors and Application in Complementary Metal-Oxide-Semiconductor Inverters

The fabrication of printed high-performance and environmentally stable n-type single-walled carbon nanotube (SWCNT) transistors and their integration into complementary (i.e., complementary metal-oxide-semiconductor, CMOS) circuits are widely recognized as key to achieving the full potential of carbon nanotube electronics. Here, we report a simple, efficient, and robust method to convert the polarity of SWCNT thin-film transistors (TFTs) using cheap and readily available ethanolamine as an electron doping agent. Printed p-type bottom-gate SWCNT TFTs can be selectively converted into n-type by deposition of ethanolamine inks on the transistor active region via aerosol jet printing. Resulted n-type TFTs show excellent electrical properties with an on/off ratio of 10⁶, effective mobility up to 30 cm² V^-1 s^-1, small hysteresis, and small subthreshold swing (90-140 mV dec^-1), which are superior compared to the original p-type SWCNT devices. The n-type SWCNT TFTs also show good stability in air, and any deterioration of performance due to shelf storage can be fully recovered by a short low-temperature annealing. The easy polarity conversion process allows construction of CMOS circuitry. As an example, CMOS inverters were fabricated using printed p-type and n-type TFTs and exhibited a large noise margin (50 and 103% of 1/2 V_dd = 1 V) and a voltage gain as high as 30 (at V_dd = 1 V). Additionally, the CMOS inverters show full rail-to-rail output voltage swing and low power dissipation (0.1 μW at V_dd = 1 V). The new method paves the way to construct fully functional complex CMOS circuitry by printed TFTs.

Flexible CMOS-Like Circuits Based on Printed P-Type and N-Type Carbon Nanotube Thin-Film Transistors

P-type and n-type top-gate carbon nanotube thin-film transistors (TFTs) can be selectively and simultaneously fabricated on the same polyethylene terephthalate (PET) substrate by tuning the types of polymer-sorted semiconducting single-walled carbon nanotube (sc-SWCNT) inks, along with low temperature growth of HfO₂ thin films as shared dielectric layers. Both the p-type and n-type TFTs show good electrical properties with on/off ratio of ≈10⁵ , mobility of ≈15 cm² V^-1 s^-1 , and small hysteresis. Complementary metal oxide semiconductor (CMOS)-like logic gates and circuits based on as-prepared p-type and n-type TFTs have been achieved. Flexible CMOS-like inverters exhibit large noise margin of 84% at low voltage (1/2 V_dd = 1.5 V) and maximum voltage gain of 30 at V_dd of 1.5 V and low power consumption of 0.1 μW. Both of the noise margin and voltage gain are one of the best values reported for flexible CMOS-like inverters at V_dd less than 2 V. The printed CMOS-like inverters work well at 10 kHz with 2% voltage loss and delay time of ≈15 μs. A 3-stage ring oscillator has also been demonstrated on PET substrates and the oscillation frequency of 3.3 kHz at V_dd of 1 V is achieved.

Printed thin film transistors and CMOS inverters based on semiconducting carbon nanotube ink purified by a nonlinear conjugated copolymer

Two innovative research studies are reported in this paper. One is the sorting of semiconducting carbon nanotubes and ink formulation by a novel semiconductor copolymer and second is the development of CMOS inverters using not the p-type and n-type transistors but a printed p-type transistor and a printed ambipolar transistor. A new semiconducting copolymer (named P-DPPb5T) was designed and synthesized with a special nonlinear structure and more condensed conjugation surfaces, which can separate large diameter semiconducting single-walled carbon nanotubes (sc-SWCNTs) from arc discharge SWCNTs according to their chiralities with high selectivity. With the sorted sc-SWCNTs ink, thin film transistors (TFTs) have been fabricated by aerosol jet printing. The TFTs displayed good uniformity, low operating voltage (±2 V) and subthreshold swing (SS) (122-161 mV dec(-1)), high effective mobility (up to 17.6-37.7 cm(2) V(-1) s(-1)) and high on/off ratio (10(4)-10(7)). With the printed TFTs, a CMOS inverter was constructed, which is based on the p-type TFT and ambipolar TFT instead of the conventional p-type and n-type TFTs. Compared with other recently reported inverters fabricated by printing, the printed CMOS inverters demonstrated a better noise margin (74% 1/2 Vdd) and was hysteresis free. The inverter has a voltage gain of up to 16 at an applied voltage of only 1 V and low static power consumption.

Printed thin film transistors and CMOS inverters based on semiconducting carbon nanotube ink purified by a nonlinear conjugated copolymer

Two innovative research studies are reported in this paper. One is the sorting of semiconducting carbon nanotubes and ink formulation by a novel semiconductor copolymer and second is the development of CMOS inverters using not the p-type and n-type transistors but a printed p-type transistor and a printed ambipolar transistor. A new semiconducting copolymer (named P-DPPb5T) was designed and synthesized with a special nonlinear structure and more condensed conjugation surfaces, which can separate large diameter semiconducting single-walled carbon nanotubes (sc-SWCNTs) from arc discharge SWCNTs according to their chiralities with high selectivity. With the sorted sc-SWCNTs ink, thin film transistors (TFTs) have been fabricated by aerosol jet printing. The TFTs displayed good uniformity, low operating voltage (±2 V) and subthreshold swing (SS) (122-161 mV dec(-1)), high effective mobility (up to 17.6-37.7 cm(2) V(-1) s(-1)) and high on/off ratio (10(4)-10(7)). With the printed TFTs, a CMOS inverter was constructed, which is based on the p-type TFT and ambipolar TFT instead of the conventional p-type and n-type TFTs. Compared with other recently reported inverters fabricated by printing, the printed CMOS inverters demonstrated a better noise margin (74% 1/2 Vdd) and was hysteresis free. The inverter has a voltage gain of up to 16 at an applied voltage of only 1 V and low static power consumption.

Development of PANI/MWCNTs decorated with cobalt oxide nanoparticles towards multiple electrochemical, photocatalytic and biomedical application sites

A facile synthesis of carbon nanotube hybrid nanostructures: energy and environmental applications.

On the Stability and Abundance of Single Walled Carbon Nanotubes

Many nanotechnological applications, using single-walled carbon nanotubes (SWNTs), are only possible with a uniform product. Thus, direct control over the product during chemical vapor deposition (CVD) growth of SWNT is desirable, and much effort has been made towards the ultimate goal of chirality-controlled growth of SWNTs. We have used density functional theory (DFT) to compute the stability of SWNT fragments of all chiralities in the series representing the targeted products for such applications, which we compare to the chiralities of the actual CVD products from all properly analyzed experiments. From this comparison we find that in 84% of the cases the experimental product represents chiralities among the most stable SWNT fragments (within 0.2 eV) from the computations. Our analysis shows that the diameter of the SWNT product is governed by the well-known relation to size of the catalytic nanoparticles, and the specific chirality is normally determined by the product’s relative stability, suggesting thermodynamic control at the early stage of product formation. Based on our findings, we discuss the effect of other experimental parameters on the chirality of the product. Furthermore, we highlight the possibility to produce any tube chirality in the context of recent published work on seeded-controlled growth.

Inkjet printing of silver nanowire networks

The development of printed electronics will require the ability to deposit a wide range of nanomaterials using printing techniques. Here we demonstrate the controlled deposition of networks of silver nanowires in well-defined patterns by inkjet printing from an optimized isopropyl alcohol-diethylene glycol dispersion. We find that great care must be taken while producing the ink and during solvent evaporation. The resultant networks have good electrical properties, displaying sheet resistances as low as 8 Ω/□ and conductivities as high as 10(5) S/m. Such optimized performances were achieved for line widths of 1-10 mm and network thicknesses of 0.5-2 μm deposited from ∼10-20 passes while using processing temperatures of no more than 110 °C. Thin networks are semitransparent with dc to optical conductivity ratios of ∼40.

Facile synthesis of nanostructured carbon materials over RANEY® nickel catalyst films printed on Al2O3 and SiO2 substrates

Films of porous RANEY® Ni catalyst particles deposited on substrates by stencil printing offer a facile platform for synthesizing nanostructured carbon/nickel composites for direct use as electrodes in electrochemical and field emitter devices.

Flexible logic circuits based on top-gate thin film transistors with printed semiconductor carbon nanotubes and top electrodes

In this report printed thin film transistors and logic circuits on flexible substrates are reported. The top-gate thin film transistors were made of the sorted semiconducting single-walled carbon nanotubes (sc-SWCNTs) ink as channel material and printed silver lines as top electrodes and interconnect. 5 nm HfOx thin films pre-deposited on PET substrates by atomic layer deposition (ALD) act as the adhesion layers to significantly improve the immobilization efficiency of sc-SWCNTs and environmental stability. The immobilization mechanism was investigated in detail. The flexible partially-printed top-gate SWCNT TFTs display ambipolar characteristics with slightly strong p-type when using 50 nm HfO(x) thin films as dielectric layer, as well as the encapsulation layer by atomic layer deposition (ALD) at 120 °C. The hole mobility, on/off ratio and subthreshold swing (SS) are ∼ 46.2 cm(2) V(-1) s(-1), 10(5) and 109 mV per decade, respectively. Furthermore, partially-printed TFTs show small hysteresis, low operating voltage (2 V) and high stability in air. Flexible partially-printed inverters show good performance with voltage gain up to 33 with 1.25 V supply voltage, and can work at 10 kHz. The frequency of flexible partially-printed five-stage ring oscillators can reach 1.7 kHz at supply voltages of 2 V with per stage delay times of 58.8 μs. This work paves a way to achieve printed SWCNT advanced logic circuits and systems on flexible substrates.

Effect of surface wettability properties on the electrical properties of printed carbon nanotube thin-film transistors on SiO2/Si substrates

The precise placement and efficient deposition of semiconducting single-walled carbon nanotubes (sc-SWCNTs) on substrates are challenges for achieving printed high-performance SWCNT thin-film transistors (TFTs) with independent gates. It was found that the wettability of the substrate played a key role in the electrical properties of TFTs for sc-SWCNTs sorted by poly[(9,9-dioctylfluorene-2,7-diyl)-co-(1,4-benzo-2,1,3-thiadiazole)] (PFO-BT). In the present work we report a simple and scalable method which can rapidly and selectively deposit a high concentration of sc-SWCNTs in TFT channels by aerosol-jet-printing. The method is based on oxygen plasma treatment of substrates, which tunes the surface wettability. TFTs printed on the treated substrates demonstrated a low operation voltage, small hysteresis, high mobility up to 32.3 cm(2) V(-1) s(-1), and high on/off ratio up to 10(6) after only two printings. Their mobilities were 10 and 30 times higher than those of TFTs fabricated on untreated and low-wettability substrates. The uniformity of printed TFTs was also greatly improved. Inverters were constructed by printed top-gate TFTs, and a maximum voltage gain of 17 at Vdd = 5 V was achieved. The mechanism of such improvements is that the PFO-BT-functionalized sc-SWCNTs are preferably immobilized on the oxygen plasma treated substrates due to the strong hydrogen bonds between sc-SWCNTs and hydroxyl groups on the substrates.

Building complex hybrid carbon architectures by covalent interconnections: graphene-nanotube hybrids and more

Graphene is theoretically a robust two-dimensional (2D) sp(2)-hybridized carbon material with high electrical conductivity and optical transparency. However, due to the existence of grain boundaries and defects, experimentally synthesized large-area polycrystalline graphene sheets are easily broken and can exhibit high sheet resistances; thus, they are not suitable as flexible transparent conductors. As described in this issue of ACS Nano, Tour et al. circumvented this problem by proposing and synthesizing a novel hybrid structure that they have named "rebar graphene", which is composed of covalently interconnected carbon nanotubes (CNTs) with graphene sheets. In this particular configuration, CNTs act as "reinforcing bars" that not only improve the mechanical strength of polycrystalline graphene sheets but also bridge different crystalline domains so as to enhance the electrical conductivity. This report seems to be only the tip of the iceberg since it is also possible to construct novel and unprecedented hybrid carbon architectures by establishing covalent interconnections between CNTs with graphene, thus yielding graphene-CNT hybrids, three-dimensional (3D) covalent CNT networks, 3D graphene networks, etc. In this Perspective, we review the progress of these carbon hybrid systems and describe the challenges that need to be overcome in the near future.

Sorting of large-diameter semiconducting carbon nanotube and printed flexible driving circuit for organic light emitting diode (OLED)

A novel approach was developed to sort a large-diameter semiconducting single-walled carbon nanotube (sc-SWCNT) based on copolyfluorene derivative with high yield. High purity sc-SWCNTs inks were obtained by wrapping arc-discharge SWCNTs with poly[2,7-(9,9-dioctylfluorene)-alt-4,7-bis(thiophen-2-yl)benzo-2,1,3-thiadiazole] (PFO-DBT) aided by sonication and centrifugation in tetrahydrofuran (THF). The sorted sc-SWCNT inks and nanosilver inks were used to print top-gated thin-film transistors (TFTs) on flexible substrates with an aerosol jet printer. The printed TFTs demonstrated low operating voltage, small hysteresis, high on-state current (up to 10(-3) A), high mobility and on-off ratio. An organic light emitting diode (OLED) driving circuit was constructed based on the printed TFTs, which exhibited high on-off ratio up to 10(4) and output current up to 3.5 × 10(-4) A at V(scan) = -4.5 V and Vdd = 0.8 V. A single OLED was switched on with the driving circuit, showing the potential as backplanes for active matrix OLED applications.

Inkjet Printing of Carbon Nanotubes

In an attempt to give a brief introduction to carbon nanotube inkjet printing, this review paper discusses the issues that come along with preparing and printing carbon nanotube ink. Carbon nanotube inkjet printing is relatively new, but it has great potential for broad applications in flexible and printable electronics, transparent electrodes, electronic sensors, and so on due to its low cost and the extraordinary properties of carbon nanotubes. In addition to the formulation of carbon nanotube ink and its printing technologies, recent progress and achievements of carbon nanotube inkjet printing are reviewed in detail with brief discussion on the future outlook of the technology.

High performance thin film transistors based on regioregular poly(3-dodecylthiophene)-sorted large diameter semiconducting single-walled carbon nanotubes

In this work, a simple and rapid method to selectively sort semiconducting-SWCNTs (sc-SWCNTs) with large diameters using regioregular poly(3-dodecylthiophene) (rr-P3DDT) is presented. The absorption spectra and Raman spectra demonstrated that metallic species of arc discharge SWCNTs were effectively removed after interaction with rr-P3DDT in toluene with the aid of sonication and centrifugation. The sorted sc-SWCNT inks have been directly used to fabricate thin film transistors (TFTs) by dip-coating, drop-casting and inkjet printing. TFTs with an effective mobility of ∼34 cm(2) V(-1) s(-1) and on-off ratios of ∼10(7) have been achieved by dip coating and drop casting the ink on SiO2/Si substrates with pre-patterned interdigitated gold electrode arrays. The printed devices also showed excellent electrical properties with a mobility of up to 6.6 cm(2) V(-1) s(-1) and on-off ratios of up to 10(5). Printed inverters based on the TFTs have been constructed on glass substrates, showing a maximum voltage gain of 112 at a V(dd) of -5 V. This work paves the way for making printable logic circuits for real applications.

Achieving ultrahigh concentrations of fluorescent single-walled carbon nanotubes using small-molecule viscosity modifiers

Surfactant dispersion is a well-established method for stabilizing individual single-walled carbon nanotubes in aqueous solutions. However, achieving high concentrations of individually dispersed nanotubes with this technique has proven challenging. Here it is demonstrated that the introduction of viscosity-enhancing compounds such as sucrose can increase the maximum concentration of surfactant-dispersed single-walled carbon nanotubes by more than a factor of 100 while still retaining the optical properties of individual nanotubes. When these solutions are used as inks for methods such as inkjet printing, they retain their fluorescent properties even after the ink has dried.

All-Printed Thin-Film Transistor Based on Purified Single-Walled Carbon Nanotubes with Linear Response

We report an all-printed thin-film transistor (TFT) on a polyimide substrate with linear transconductance response. The TFT is based on our purified single-walled carbon nanotube (SWCNT) solution that is primarily consists of semiconducting carbon nanotubes (CNTs) with low metal impurities. The all-printed TFT exhibits a high ON/OFF ratio of around 103and bias-independent transconductance over a certain gate bias range. Such bias-independent transconductance property is different from that of conventional metal-oxide-semiconductor field-effect transistors (MOSFETs) due to the special band structure and the one-dimensional (1D) quantum confined density of state (DOS) of CNTs. The bias-independent transconductance promises modulation linearity for analog electronics.