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Yi ZJ, Ji R. Excitonic and Environmental Screening Effects in Two-Dimensional Janus MSO (M = Ga, In). Inorg Chem 2024; 63:14989-14997. [PMID: 39077763 DOI: 10.1021/acs.inorgchem.4c01739] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/31/2024]
Abstract
In this work, we investigate Janus monolayer MSO (M = Ga, In) systems using the state-of-the-art GW method within the framework of the many-body perturbation theory. Ground-state density functional theory calculations reveal that both the substitution of S atoms with O atoms and the chemisorption of the O atoms on a single side of the MS layer narrow the band gaps and reduce the carrier mobilities. Notably, one-shot GW calculations demonstrate that the GaSO-2 and InSO-1 systems exhibit optimal band gaps for visible light absorption. Based on the Bethe-Salpeter equation, the exciton binding energies of isolated Janus monolayer GaSO-2 and InSO-1 systems are lower than those of their prototype GaS and InS by 0.37 and 0.17 eV, respectively. Further calculations show that the exciton binding energies of the Janus GaSO-2 and InSO-1 systems can be precisely tuned by adjusting their thicknesses and the thicknesses of their substrates. A deep understanding of the mechanisms for tuning the exciton binding energies in Janus GaSO-2 and InSO-1 systems is crucial for the future design of advanced photovoltaic devices.
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Affiliation(s)
- Zhi-Jun Yi
- School of Materials Science and Physics, China University of Mining and Technology, 221116 Xuzhou, P. R. China
| | - Ran Ji
- School of Materials Science and Physics, China University of Mining and Technology, 221116 Xuzhou, P. R. China
- Institute of Theoretical Chemistry, College of Chemistry, Jilin University, 130023 Changchun, P. R. China
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2
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Zhou M, Zhang C, He C, Li J, Ouyang T, Tang C, Zhong J. Novel BiOI/LaOXI〈IX〉 heterojunction with enhanced visible-light driven photocatalytic performance: unveiling the mechanism of interlayer electron transition. Phys Chem Chem Phys 2024; 26:19450-19459. [PMID: 38973666 DOI: 10.1039/d4cp01195c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/09/2024]
Abstract
Improving visible light absorption plays an important role in the utilization of solar power for photocatalysis. Using first-principles calculations within the HSE06 functional, we propose that the semiconductor heterojunction BiOI/LaOXI〈IX〉 extends the optical absorption to the near-infrared range, boosts the absorption coefficient from 1.28 × 105 cm-1 to above 2.20 × 105 cm-1 in the visible light range, and increases the conversion efficiency of solar power up to 9.48%. The enhanced optical absorption derives from the significant interlayer transition and excitonic effect which benefit from polarized LaOXI with a flat band in the highest valence band (VB). In BiOI/LaOClI〈ICl 〉, the electrostatic potential difference (ΔΦ) modifies the band edge positions to meet the requirements for photocatalytic overall water splitting, while the polarized electric field (Ep) accelerates the separation of photogenerated carriers and regulates the overpotentials of photogenerated carriers following a direct Z-scheme strategy. In addition, BiOI/LaOXI〈IX〉 is dynamically and thermodynamically stable. Furthermore, only a low external potential is needed to drive the redox reaction. Our theoretical results suggest that BiOI/LaOXI〈IX〉 could be a potential photocatalyst for overall water splitting with enhanced visible light absorption.
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Affiliation(s)
- Mengshi Zhou
- Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, Laboratory for Quantum Engineering and Micro-Nano Energy Technology, School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, People's Republic of China.
| | - Chunxiao Zhang
- Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, Laboratory for Quantum Engineering and Micro-Nano Energy Technology, School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, People's Republic of China.
- School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo, Shandong 255100, People's Republic of China
| | - Chaoyu He
- Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, Laboratory for Quantum Engineering and Micro-Nano Energy Technology, School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, People's Republic of China.
| | - Jin Li
- Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, Laboratory for Quantum Engineering and Micro-Nano Energy Technology, School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, People's Republic of China.
| | - Tao Ouyang
- Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, Laboratory for Quantum Engineering and Micro-Nano Energy Technology, School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, People's Republic of China.
| | - Chao Tang
- Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, Laboratory for Quantum Engineering and Micro-Nano Energy Technology, School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, People's Republic of China.
| | - Jianxin Zhong
- Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, Laboratory for Quantum Engineering and Micro-Nano Energy Technology, School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, People's Republic of China.
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Ngoipala A, Ren H, Ryan KM, Vandichel M. Structure-Property Correlations in CZTSe Domains within Semiconductor Nanocrystals as Photovoltaic Absorbers. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024:e2402154. [PMID: 38889237 DOI: 10.1002/advs.202402154] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/28/2024] [Revised: 05/08/2024] [Indexed: 06/20/2024]
Abstract
Semiconductor nanocrystals (NCs) are promising materials for various applications. Two of four recently identified CuαZnβSnγSeδ (CZTSe) domains demonstrate metallic character, while the other two exhibit semiconductor character. The presence of both metallic and semiconductor domains in one NC can hugely benefit future applications. In contrast to traditional band gap studies in the NC community, this study emphasizes that NC domain interfaces also affect the electronic properties. Specifically, the measured band gap of a tetrapod-shaped CZTSe NC is demonstrated to originate from two specific domains (tetragonal I4 ¯ $\bar 4$ and monoclinic P1c1 Cu2ZnSnSe4). The heterojunction between these two semiconductor domains exhibits a staggered type-II band alignment, facilitating the separation of photogenerated electron-hole pairs. Interestingly, tetrapod NCs have the potential to be efficient absorber materials with higher capacitance in photovoltaic applications due to the presence of both semiconductor/semiconductor interfaces and metal/semiconductor "Schottky"-junctions. For the two photo-absorbing domains, the calculated absorption spectra yield maximum photon-absorption coefficients of about 105 cm-1 in the visible and UV regions and a theoretical solar power conversion efficiency up to 20.8%. These insights into the structure-property relationships in CZTSe NCs will guide the design of more efficient advanced optical CZTSe materials for various applications.
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Affiliation(s)
- Apinya Ngoipala
- Department of Chemical Sciences and Bernal Institute, University of Limerick, Limerick, V94 TP9X, Ireland
| | - Huan Ren
- Department of Chemical Sciences and Bernal Institute, University of Limerick, Limerick, V94 TP9X, Ireland
- Department of Biological Sciences, National University of Singapore, 16 Science Drive 4, Singapore, 117543, Singapore
| | - Kevin M Ryan
- Department of Chemical Sciences and Bernal Institute, University of Limerick, Limerick, V94 TP9X, Ireland
| | - Matthias Vandichel
- Department of Chemical Sciences and Bernal Institute, University of Limerick, Limerick, V94 TP9X, Ireland
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4
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Jiang Y, Lei S, Wang M. S-Scheme Boron Phosphide/MoS 2 Heterostructure with Excellent Light Conversion Ability for Solar Cells and Water Splitting Photocatalysts. ACS APPLIED MATERIALS & INTERFACES 2024; 16:30521-30533. [PMID: 38812243 DOI: 10.1021/acsami.4c03567] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2024]
Abstract
Monolayer molybdenum disulfide (MoS2) with a suitable direct band gap and strong optical absorption is very attractive for utilization in solar cells and photocatalytic water splitting. Nevertheless, the broader utilization of MoS2 is impeded by its low carrier mobility and limited responsiveness to infrared light. To overcome these challenges, we constructed a variety of stackings for the boron phosphide (BP)/MoS2 van der Waals heterostructure (vdWH), all of which display S-scheme band alignments except for the AC' stacking. The constituent BP monolayer has superior carrier mobility and strong infrared and visible light response, which makes up for the shortcomings of MoS2. The study revealed that the AB stacking exhibits a remarkable power conversion efficiency of 22.27%, indicating its significant application prospect in solar cells. Additionally, the AB stacking also exhibits a promising application prospect in photocatalytic water splitting due to its suitable band structure, S-scheme band alignment, strong optical adsorption characteristic, high solar-to-hydrogen efficiency, and robust built-in electric field. Meanwhile, applying uniaxial tensile strains along the x-axis direction is more beneficial for photocatalytic water splitting. Hence, the AB-stacked BP/MoS2 vdWH shows significant potential for use in both solar cells and photocatalytic water splitting. This work paves the way for exploring the application of S-scheme heterostructures in solar energy conversion systems.
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Affiliation(s)
- Yuncai Jiang
- Key Laboratory of MEMS of Ministry of Education, School of Integrated Circuits, Southeast University, 210096 Nanjing, China
| | - Shuangying Lei
- Key Laboratory of MEMS of Ministry of Education, School of Integrated Circuits, Southeast University, 210096 Nanjing, China
| | - Mingyuan Wang
- Key Laboratory of MEMS of Ministry of Education, School of Integrated Circuits, Southeast University, 210096 Nanjing, China
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5
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Hua L, Li Z. Ideal Vacuum-Based Efficient and High-Throughput Computational Screening of Type II Heterojunctions. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 38019534 DOI: 10.1021/acsami.3c11082] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/30/2023]
Abstract
Heterojunctions featuring a type II band alignment play a crucial role in a wide range of devices, particularly in the realm of solar cells. However, the design of such heterojunctions with a specific type of band alignment poses a substantial challenge due to the immense number of potential combinations of bulk semiconductors and their relative orientations. In this study, we propose an efficient, high-throughput computational screening method tailored for heterojunctions. Our approach, using the ideal vacuum level as a reference energy, eliminates the need for explicit electronic structure calculations for junctions. Through this protocol, we identify 1041 type II heterojunctions out of 2692 structures constructed from 86 selected inorganic compounds with appropriate band gaps sourced from the Inorganic Crystal Structure Database. For potential application in solar cells, we assess these heterojunctions, and remarkably, 58 of them exhibit a power conversion efficiency (PCE) exceeding 15%, with 13 surpassing the 20% threshold. Test calculations with expensive interface models confirm the reliability of PCE predictions based on ideal vacuums. These predictions will be of benefit in assessing the material applicability for solar cell applications. Furthermore, the versatility of our proposed screening method extends beyond solar cells, making it a valuable theoretical design tool that can be applied to a wide range of heterojunction devices.
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Affiliation(s)
- Ling Hua
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Zhenyu Li
- Key Laboratory of Precision and Intelligent Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, China
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Bikerouin M, Chdil O, Balli M. Solar cells based on 2D Janus group-III chalcogenide van der Waals heterostructures. NANOSCALE 2023; 15:7126-7138. [PMID: 37000599 DOI: 10.1039/d2nr06200c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Janus monolayers, realized by breaking the vertical structural symmetry of two-dimensional (2D) materials, pave the way for a new era of high-quality and high-performance atomically-thin vertical p-n heterojunction solar cells. Herein, employing first-principles computations, Janus group-III chalcogenide monolayers, MX, M2XY, MM'X2 and MM'XY (M, M' = Ga, In; X, Y = S, Se, Te), are deeply investigated in view of their implementation in 2D photovoltaic systems. Their stability analysis reveals that the 21 investigated monolayers are energetically, thermodynamically, mechanically, dynamically, and thermally stable, confirming their growth feasibility under ambient conditions. Furthermore, owing to their optimal band gap, high charge carrier mobilities, and strong light absorption, 2D Janus group-III monolayers are predicted as promising candidates for 2D excitonic solar cell applications. In fact, 46 type-II van der Waals (vdW) heterostructures with a lattice mismatch of less than 5% are identified by analyzing the band alignments of the investigated monolayers obtained through the HSE + SOC approach. In particular, 7 vertical vdW heterojunctions with a power conversion efficiency (PCE) higher than 20% are predicted and might be the focus of future experimental and theoretical studies. To further confirm the type II band alignment, the Ga2STe-GaInS2 vdW heterostructure, which reveals the highest PCE of 23.69%, is thoroughly investigated. Our results not only predict and evaluate stable 2D Janus group-III chalcogenide monolayers and vdW heterostructures, but also suggest that they could be used as materials for next-generation optoelectronic and photovoltaic devices.
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Affiliation(s)
- M Bikerouin
- AMEEC team, LERMA, College of Engineering and Architecture, International University of Rabat, parc Technopolis, Rocade de Rabat-Salé, 11100, Morocco.
| | - O Chdil
- AMEEC team, LERMA, College of Engineering and Architecture, International University of Rabat, parc Technopolis, Rocade de Rabat-Salé, 11100, Morocco.
| | - M Balli
- AMEEC team, LERMA, College of Engineering and Architecture, International University of Rabat, parc Technopolis, Rocade de Rabat-Salé, 11100, Morocco.
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7
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Tu J, Wu W, Lei X, Li P. The SWSe-BP vdW Heterostructure as a Promising Photocatalyst for Water Splitting with Power Conversion Efficiency of 19.4. ACS OMEGA 2022; 7:37061-37069. [PMID: 36312328 PMCID: PMC9609072 DOI: 10.1021/acsomega.2c01977] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/31/2022] [Accepted: 10/05/2022] [Indexed: 06/16/2023]
Abstract
Hydrogen generation by photocatalytic water splitting has drawn enormous research attention for converting sunlight and water into clean and green hydrogen fuel. However, the search for a high efficiency photocatalyst for water splitting is a key challenge. Two dimensional (2D) van der Waals (vdW) heterostructures as photocatalysts exhibit many advantages over the stacked original materials. In this article, we designed two novel 2D vdW heterostructures composed of WSSe and blue phosphorene (BP) monolayers, SWSe-BP and SeWS-BP, which are thermodynamically stable at room temperature. Using first-principles calculations, we found that the SWSe-BP vdW heterostructure can act as a potential photocatalyst for water splitting due to its robust stabilities, type-II band alignment, moderate bandgap, and suitable band edge positions for the redox reactions of water splitting, strong optical absorption, and excellent power conversion efficiency (PCE). Remarkably, the PCE of the SWSe-BP vdW heterostructure can achieve approximately 19.4% under a 3% biaxial tensile strain.
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Affiliation(s)
- Jiarui Tu
- Department
of Physics, Jiangxi Normal University, Nanchang, Jiangxi330022, China
| | - Wenjun Wu
- Department
of Physics, Jiangxi Normal University, Nanchang, Jiangxi330022, China
| | - Xueling Lei
- Department
of Physics, Jiangxi Normal University, Nanchang, Jiangxi330022, China
| | - Pengfei Li
- Key
Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials
and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei230031, China
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8
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Qiao Y, Shen H, Zhang F, Liu S, Yin H. W 4PCl 11 monolayer: an unexplored 2D material with moderate direct bandgap and strong visible-light absorption for highly efficient solar cells. NANOSCALE 2022; 14:12386-12394. [PMID: 35972044 DOI: 10.1039/d2nr03009h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The discovery of novel two-dimensional (2D) materials with excellent electronic and optoelectronic properties have attracted much scientific attention. Based on the first-principles calculations, we predict an unexplored 2D W4PCl11 monolayer, which is potentially strippable from its bulk counterpart with the exfoliation energy of only 0.16 J m-2. The dynamical, thermal, and mechanical stabilities have also been confirmed. Remarkably, W4PCl11 monolayer is direct semiconductor with a bandgap of 1.25 eV, which endows the monolayer with very strong visible-light absorption in the magnitude of 105 cm-1. Meanwhile, the calculated carrier mobilities of W4PCl11 monolayer can reach to 103 cm2 V-1 s-1. Considering the moderate direct bandgap and high carrier mobility, W4PCl11 monolayer should be a superior candidate for the donor material of excitonic solar cells. The estimated power conversion efficiency of the fabricated W4PCl11/Bi2WO6 heterojunction reaches as high as 21.64%, which much superior to those of most recently reported 2D heterojunction. All these outstanding properties accompanied with its experimental feasibility endows W4PCl11 monolayer with promising photovoltaic applications.
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Affiliation(s)
- Yusen Qiao
- Joint Center for Theoretical Physics, and Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng 475004, China.
- International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, China
| | - Huimin Shen
- Joint Center for Theoretical Physics, and Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng 475004, China.
- International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, China
| | - Fumin Zhang
- Joint Center for Theoretical Physics, and Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng 475004, China.
- International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, China
| | - Siyuan Liu
- Joint Center for Theoretical Physics, and Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng 475004, China.
- International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, China
| | - Huabing Yin
- Joint Center for Theoretical Physics, and Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng 475004, China.
- International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, China
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Chen YJ, Li X, Jia BN, Dong C, Guan XN, Zhao X, Han LH. Optoelectronic properties and interfacial interactions of two-dimensional Cs 2PbX 4-MSe 2 (M = Mo, W) heterostructures. RSC Adv 2022; 12:9883-9890. [PMID: 35424908 PMCID: PMC8963266 DOI: 10.1039/d2ra00595f] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/28/2022] [Accepted: 03/06/2022] [Indexed: 11/21/2022] Open
Abstract
Constructing 2D inorganic perovskites and TMDs heterostructures is an effective method to design stable and high-performance perovskites optoelectronic applications. Here, we investigate the optoelectronic properties and interfacial interactions of Cs2PbX4-MSe2 (X = Cl, Br, I; M = Mo, W) heterostructures using first-principles calculations. Firstly, six Cs2PbX4-MSe2 interfaces remain stable in energy. With the halogen varying from Cl to I, the interlayer distances of Cs2PbX4-MSe2 heterostructures increase rapidly. The CBM and VBM of monolayer Cs2PbX4 are all higher than that of monolayer MSe2 and the charges transfer from Cs2PbX4 interfaces to MSe2 interfaces when they contact. Both Cs2PbX4-MSe2 heterostructures are type-II heterostructures, which can drive the photogenerated electrons and holes to move in opposite directions. What's more, Cs2PbCl4-MoSe2 heterostructures exhibit the highest charge transport efficiency among Cs2PbX4-MoSe2 heterostructures because Cs2PbCl4-MoSe2 heterostructures have the lowest exciton binding energies among Cs2PbX4-MSe2 heterostructures. In addition, the optical absorptions of all heterostructures are significantly higher than the corresponding Cs2PbX4 monolayers and MSe2 monolayers. The construction of Cs2PbX4-MoSe2 heterostructures is beneficial for improving the photoelectric performance of two-dimensional perovskite devices. Lastly, we found that the Cs2PbI4-WSe2 heterostructure has the largest PCE (18%) among Cs2PbX4-MSe2 heterostructures. The Cs2PbCl4-MoSe2 heterostructure exhibits great potential application in photodetector devices and the Cs2PbI4-WSe2 heterostructure has great potential application in solar cells.
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Affiliation(s)
- Ying Jie Chen
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology Changchun 130013 China
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications Beijing 100876 China
| | - Xue Li
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications Beijing 100876 China
| | - Bao Nan Jia
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications Beijing 100876 China
| | - Chao Dong
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications Beijing 100876 China
| | - Xiao Ning Guan
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications Beijing 100876 China
- School of Information and Communication Engineering, Beijing University of Posts and Telecommunications Beijing 100876 China
| | - Xin Zhao
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology Changchun 130013 China
| | - Li Hong Han
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology Changchun 130013 China
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications Beijing 100876 China
- School of Electronic Engineering, Beijing University of Posts and Telecommunications Beijing 100876 China
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Singh J, Jakhar M, Kumar A. Stability, optoelectronic and thermal properties of two-dimensional Janus α-Te 2S. NANOTECHNOLOGY 2022; 33:215405. [PMID: 35158350 DOI: 10.1088/1361-6528/ac54e1] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/04/2022] [Accepted: 02/14/2022] [Indexed: 06/14/2023]
Abstract
Motivated by recent progress in the two-dimensional (2D) materials of group VI elements and their experimental fabrication, we have investigated the stability, optoelectronic and thermal properties of Janusα-Te2S monolayer using first-principles calculations. The phonon dispersion and MD simulations confirm its dynamical and thermal stability. The moderate band gap (∼1.5 eV), ultrahigh carrier mobility (∼103cm2V-1s-1), small exciton binding energy (0.26 eV), broad optical absorption range and charge carrier separation ability due to potential difference (ΔV = 1.07 eV) on two surfaces of Janusα-Te2S monolayer makes it a promising candidate for solar energy conversion. We propose various type-II heterostructures consisting of Janusα-Te2S and other transition metal dichalcogenides for solar cell applications. The calculated power conversion efficiencies of the proposed heterostructures, i.e.α-Te2S/T-PdS2,α-Te2S/BP andα-Te2S/H-MoS2are ∼21%, ∼19% and 18%, respectively. Also, the ultralow value of lattice thermal conductivity (1.16 W m-1K-1) of Janusα-Te2S makes it a promising material for the fabrication of next-generation thermal energy conversion devices.
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Affiliation(s)
- Jaspreet Singh
- Department of Physics, Central University of Punjab, VPO Ghudda, Bathinda, 151401, India
| | - Mukesh Jakhar
- Department of Physics, Central University of Punjab, VPO Ghudda, Bathinda, 151401, India
| | - Ashok Kumar
- Department of Physics, Central University of Punjab, VPO Ghudda, Bathinda, 151401, India
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11
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Lin P, Xu N, Tan X, Yang X, Xiong R, Wen C, Wu B, Lin Q, Sa B. The interlayer coupling modulation of a g-C3N4/WTe2 heterostructure for solar cell applications. RSC Adv 2022; 12:998-1004. [PMID: 35425138 PMCID: PMC8978835 DOI: 10.1039/d1ra08397j] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/16/2021] [Accepted: 12/21/2021] [Indexed: 11/21/2022] Open
Abstract
Constructing van der Waals (vdW) heterostructures has been proved to be an excellent strategy to design or modulate the physical and chemical properties of 2D materials. Here, we investigated the electronic structures and solar cell performances of the g-C3N4/WTe2 heterostructure via first-principles calculations. It is highlighted that the g-C3N4/WTe2 heterostructure presents a type-II band edge alignment with a band gap of 1.24 eV and a corresponding visible light absorption coefficient of ∼106 cm−1 scale. Interestingly, the band gap of the g-C3N4/WTe2 heterostructure could increase to 1.44 eV by enlarging the vdW gap to harvest more visible light energy. It is worth noting that the decreased band alignment difference resulting from tuning the vdW gap, leads to a promotion of the power conversion efficiency up to 17.68%. This work may provide theoretical insights into g-C3N4/WTe2 heterostructure-based next-generation solar cells, as well as a guide for tuning properties of vdW heterostructures. g-C3N4/WTe2 heterostructure with tunable vdW gap shows a favorable solar energy conversion performance.![]()
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Affiliation(s)
- Peng Lin
- Key Laboratory of Eco-materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, P. R. China
| | - Nengshen Xu
- Key Laboratory of Eco-materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, P. R. China
| | - Xiaolin Tan
- Key Laboratory of Eco-materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, P. R. China
| | - Xuhui Yang
- College of Environmental Science and Engineering, Fujian Key Laboratory of Pollution Control & Resource Reuse, Fujian Normal University, Fuzhou 350007 Fujian, P. R. China
| | - Rui Xiong
- Key Laboratory of Eco-materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, P. R. China
| | - Cuilian Wen
- Key Laboratory of Eco-materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, P. R. China
| | - Bo Wu
- Key Laboratory of Eco-materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, P. R. China
| | - Qilang Lin
- Key Laboratory of Eco-materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, P. R. China
| | - Baisheng Sa
- Key Laboratory of Eco-materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, P. R. China
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Zhao H, Gu Y, Lu N, Liu Y, Ding Y, Ye B, Huo X, Bian B, Wei C, Zhang X, Yang G. Janus In2SeTe for photovoltaic device applications from first-principles study. Chem Phys 2022. [DOI: 10.1016/j.chemphys.2021.111384] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/07/2023]
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13
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Ding W, Li L. Strain and electric field tunable photoelectric properties of multilayer Sb 2Se 3. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 34:095701. [PMID: 34826828 DOI: 10.1088/1361-648x/ac3db3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/02/2021] [Accepted: 11/26/2021] [Indexed: 06/13/2023]
Abstract
Antimony selenide, Sb2Se3, has been attracted widespread attention in photovoltaic applications due to its high absorption coefficient and suitable band gap. However, the influence of uniaxial strain and electric field on the electronic and photovoltaic properties of multilayer Sb2Se3is still unknown. Here, the quantitative relationship, such as strain-property, electric field-property, as well as thickness-property, is explored via first-principles calculations. Our results demonstrate that the band gap and photovoltaic parameters (Jsc,Voc, FF and PCE) of multilayer Sb2Se3are not only affected by the uniaxial strain and electric field, but can also be tuned via the coupling of thickness with strain and electric field. The band-gap of multilayer Sb2Se3is linear dependent on uniaxial strain and external electric field. We found that the effect of strain on the photovoltaic parameters could be negligible as compared with the effect of thickness. However, the effect of electric field is thickness dependent, 1-2 layer(s) thin films are not affected while the impact of electric field increases with the increasing thickness. The quantitative strain (electric field)-properties relation of multilayer Sb2Se3suggesting that Sb2Se3films have a potential application in the field of strain and electric field sensors.
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Affiliation(s)
- Wanxin Ding
- School of Chemistry and Chemical Engineering, Jiangsu University, Zhenjiang 212013, People's Republic of China
| | - Longhua Li
- School of Chemistry and Chemical Engineering, Jiangsu University, Zhenjiang 212013, People's Republic of China
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14
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Goswami B, Khan BA. Understanding the photovoltaic performances of ZnSe quantum dot-fullerene nanocomposites: A computational study. COMPUT THEOR CHEM 2021. [DOI: 10.1016/j.comptc.2021.113463] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
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15
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Shu H. Novel C
3
B/SiC
2
Heterobilayer: Electro‐Optical Properties Induced by Different Interlayer Coupling. ADVANCED THEORY AND SIMULATIONS 2021. [DOI: 10.1002/adts.202100275] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
Affiliation(s)
- Huabing Shu
- School of Science Jiangsu University of Science and Technology Zhenjiang 212001 P. R. China
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16
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Ren K, Zheng R, Xu P, Cheng D, Huo W, Yu J, Zhang Z, Sun Q. Electronic and Optical Properties of Atomic-Scale Heterostructure Based on MXene and MN (M = Al, Ga): A DFT Investigation. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:2236. [PMID: 34578552 PMCID: PMC8467826 DOI: 10.3390/nano11092236] [Citation(s) in RCA: 23] [Impact Index Per Article: 7.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/07/2021] [Revised: 08/16/2021] [Accepted: 08/26/2021] [Indexed: 12/15/2022]
Abstract
After the discovery of graphene, a lot of research has been conducted on two-dimensional (2D) materials. In order to increase the performance of 2D materials and expand their applications, two different layered materials are usually combined by van der Waals (vdW) interactions to form a heterostructure. In this work, based on first-principles calculation, some charming properties of the heterostructure constructed by Hf2CO2, AlN and GaN are addressed. The results show that Hf2CO2/AlN and Hf2CO2/GaN vdW heterostructures can keep their original band structure shape and have strong thermal stability at 300 K. In addition, the Hf2CO2/MN heterostructure has I-type band alignment structure, which can be used as a promising light-emitting device material. The charge transfer between the Hf2CO2 and AlN (or GaN) monolayers is 0.1513 (or 0.0414) |e|. The potential of Hf2CO2/AlN and Hf2CO2/GaN vdW heterostructures decreases by 6.445 eV and 3.752 eV, respectively, across the interface. Furthermore, both Hf2CO2/AlN and Hf2CO2/GaN heterostructures have remarkable optical absorption capacity, which further shows the application prospect of the Hf2CO2/MN heterostructure. The study of this work provides theoretical guidance for the design of heterostructures for use as photocatalytic and photovoltaic devices.
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Affiliation(s)
- Kai Ren
- School of Mechanical and Electronic Engineering, Nanjing Forestry University, Nanjing 210037, China; (R.Z.); (P.X.); (D.C.); (W.H.)
| | - Ruxin Zheng
- School of Mechanical and Electronic Engineering, Nanjing Forestry University, Nanjing 210037, China; (R.Z.); (P.X.); (D.C.); (W.H.)
| | - Peng Xu
- School of Mechanical and Electronic Engineering, Nanjing Forestry University, Nanjing 210037, China; (R.Z.); (P.X.); (D.C.); (W.H.)
| | - Dong Cheng
- School of Mechanical and Electronic Engineering, Nanjing Forestry University, Nanjing 210037, China; (R.Z.); (P.X.); (D.C.); (W.H.)
| | - Wenyi Huo
- School of Mechanical and Electronic Engineering, Nanjing Forestry University, Nanjing 210037, China; (R.Z.); (P.X.); (D.C.); (W.H.)
| | - Jin Yu
- School of Materials Science and Engineering, Southeast University, Nanjing 211189, China;
| | - Zhuoran Zhang
- Center for More-Electric-Aircraft Power System, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, China;
| | - Qingyun Sun
- School of Mechanical and Electronic Engineering, Nanjing Forestry University, Nanjing 210037, China; (R.Z.); (P.X.); (D.C.); (W.H.)
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17
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Kar M, Ghosh A, Sarkar R, Pal S, Sarkar P. Arene and functionalized arene based two dimensional organic-inorganic hybrid perovskites for photovoltaic applications. J Comput Chem 2021; 42:1982-1990. [PMID: 34390256 DOI: 10.1002/jcc.26731] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/26/2021] [Revised: 06/23/2021] [Accepted: 07/25/2021] [Indexed: 11/12/2022]
Abstract
Recently, two-dimensional organic-inorganic hybrid perovskites have attracted great attention for their outstanding performances in solar energy conversion devices. By using first principles calculations, we explored the structural, electronic and optical properties of recently synthesized (PEA)2 PbI4 and (PEA)2 SnI4 organic-inorganic hybrid perovskites to understand the photovoltaic performances of these systems. Our study reveals that both the perovskites are direct band gap semiconductors and possess desirable band gap for solar energy absorption. We have further extended our study to fluoro-, chloro-, and bromo-functionalized phenethylammonium (PEA) cations based [X(X = F, Cl, Br)PEA]2 A(A = Pb, Sn)I4 perovskite materials. The halogenated benzene moiety confers an ultrahydrophobic character and protects the perovskites from ambient moisture. The halogen functionalized perovskites remain direct band gap semiconductors and all the perovskites show very strong optical absorption (∼7 × 105 cm-1 ) across UV-visible region. We have further calculated the photo-conversion efficiency (PCE) of both arene and functionalized arene based perovskites. The halogen-functionalized PEA-based perovskites also exhibit high PCE as like pristine ones and finally achieve high PCE of up to 24.30%, making them competitive with other previously reported perovskite-based photovoltaic devices.
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Affiliation(s)
- Moumita Kar
- Department of Chemistry, Visva-Bharati University, Santiniketan, India
| | - Atish Ghosh
- Department of Chemistry, Visva-Bharati University, Santiniketan, India
| | | | - Sougata Pal
- Department of Chemistry, University of Gour Banga, Malda, India
| | - Pranab Sarkar
- Department of Chemistry, Visva-Bharati University, Santiniketan, India
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18
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Zeng J, Xu L, Dong K, Yang K, Wang L. Multiple Heterojunction System of Boron Nitride‐Graphene/Black Phosphorene as Highly Efficient Solar Cell. ADVANCED THEORY AND SIMULATIONS 2021. [DOI: 10.1002/adts.202100169] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Affiliation(s)
- Jian Zeng
- Energy Materials Computing Center, School of Energy and Mechanical Engineering Jiangxi University of Science and Technology Nanchang 330013 China
| | - Liang Xu
- Energy Materials Computing Center, School of Energy and Mechanical Engineering Jiangxi University of Science and Technology Nanchang 330013 China
- Key Laboratory for Micro‐Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics Hunan University Changsha 410082 China
| | - Kejun Dong
- Centre for Infrastructure Engineering, School of Engineering, Design and Built Environment Western Sydney University Penrith New South Wales 2751 Australia
| | - Kai Yang
- School of Chemistry and Chemical Engineering Jiangxi University of Science and Technology Ganzhou 341000 China
| | - Ling‐Ling Wang
- Key Laboratory for Micro‐Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics Hunan University Changsha 410082 China
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19
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Ma Z, Li R, Xiong R, Zhang Y, Xu C, Wen C, Sa B. InSe/Te van der Waals Heterostructure as a High-Efficiency Solar Cell from Computational Screening. MATERIALS 2021; 14:ma14143768. [PMID: 34300687 PMCID: PMC8306732 DOI: 10.3390/ma14143768] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/26/2021] [Revised: 06/30/2021] [Accepted: 07/01/2021] [Indexed: 11/22/2022]
Abstract
Designing the electronic structures of the van der Waals (vdW) heterostructures to obtain high-efficiency solar cells showed a fascinating prospect. In this work, we screened the potential of vdW heterostructures for solar cell application by combining the group III–VI MXA (M = Al, Ga, In and XA = S, Se, Te) and elementary group VI XB (XB = Se, Te) monolayers based on first-principle calculations. The results highlight that InSe/Te vdW heterostructure presents type-II electronic band structure feature with a band gap of 0.88 eV, where tellurene and InSe monolayer are as absorber and window layer, respectively. Interestingly, tellurene has a 1.14 eV direct band gap to produce the photoexcited electron easily. Furthermore, InSe/Te vdW heterostructure shows remarkably light absorption capacities and distinguished maximum power conversion efficiency (PCE) up to 13.39%. Our present study will inspire researchers to design vdW heterostructures for solar cell application in a purposeful way.
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Affiliation(s)
- Zechen Ma
- Multiscale Computational Materials Facility, and Key Laboratory of Eco-Materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou 350100, China; (Z.M.); (R.L.); (R.X.)
| | - Ruifeng Li
- Multiscale Computational Materials Facility, and Key Laboratory of Eco-Materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou 350100, China; (Z.M.); (R.L.); (R.X.)
| | - Rui Xiong
- Multiscale Computational Materials Facility, and Key Laboratory of Eco-Materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou 350100, China; (Z.M.); (R.L.); (R.X.)
| | - Yinggan Zhang
- College of Materials, Xiamen University, Xiamen 361005, China;
| | - Chao Xu
- Xiamen Talentmats New Materials Science & Technology Co., Ltd., Xiamen 361015, China;
| | - Cuilian Wen
- Multiscale Computational Materials Facility, and Key Laboratory of Eco-Materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou 350100, China; (Z.M.); (R.L.); (R.X.)
- Correspondence: (C.W.); (B.S.)
| | - Baisheng Sa
- Multiscale Computational Materials Facility, and Key Laboratory of Eco-Materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou 350100, China; (Z.M.); (R.L.); (R.X.)
- Correspondence: (C.W.); (B.S.)
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20
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Liu HY, Yang CL, Wang MS, Ma XG. The high power conversion efficiency of a two-dimensional GeSe/AsP van der Waals heterostructure for solar energy cells. Phys Chem Chem Phys 2021; 23:6042-6050. [PMID: 33683239 DOI: 10.1039/d0cp05413e] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/27/2022]
Abstract
Constructing a van der Waals heterostructure is a practical way to promote the conversion efficiency of solar energy. Here, we demonstrate the efficient performance of a GeSe/AsP heterostructure in solar energy cells based on the first-principles calculations. The electronic properties, optical absorption, and optoelectronic properties are calculated to evaluate the efficiency of the newly designed heterostructure. The results indicate that the GeSe/AsP heterostructure possesses a type-II band alignment with an indirect bandgap of 1.10 eV, which greatly promotes the effective separation of photogenerated carriers. Besides, an intrinsic electric field is formed in the direction from the AsP to GeSe monolayer, which is beneficial to prevent the recombination of the photogenerated electron-hole pair. Simultaneously, a strong optical absorption is observed in the visible light range. The predicted power conversion efficiency (PCE) of the GeSe/AsP heterostructure is 16.0% and can be promoted to 17.3% by applying 1% biaxial compression strain. The present results indicate that the GeSe/AsP heterostructure is a promising candidate material for high-performance solar cells.
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Affiliation(s)
- Hong-Yao Liu
- School of Physics and Optoelectronic Engineering, Ludong University, Yantai 264025, People's Republic of China.
| | - Chuan-Lu Yang
- School of Physics and Optoelectronic Engineering, Ludong University, Yantai 264025, People's Republic of China.
| | - Mei-Shan Wang
- School of Physics and Optoelectronic Engineering, Ludong University, Yantai 264025, People's Republic of China.
| | - Xiao-Guang Ma
- School of Physics and Optoelectronic Engineering, Ludong University, Yantai 264025, People's Republic of China.
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21
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Li H, Ye L, Xiong Y, Zhang H, Zhou S, Li W. Tunable electronic properties of BSe-MoS 2/WS 2 heterostructures for promoted light utilization. Phys Chem Chem Phys 2021; 23:10081-10096. [PMID: 33871522 DOI: 10.1039/d1cp00709b] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/26/2022]
Abstract
With applications in high performance electronics, photovoltaics, and catalysis, two-dimensional (2D) transition metal dichalcogenides (TMDCs) attract extensive attention due to their extraordinary physical properties. People have focused on TMDC-based materials for years, while the low mobility greatly hinders their further application. TMDC-based heterostructures with tunable band alignment have been experimentally confirmed to be feasible for photoelectronic devices or photocatalysts. Based on the density functional theory (DFT), there are four discoveries in this work: (1) we propose two new heterostructures based on BSe and MoS2/WS2 that have quite low mismatches and intrinsic type-II alignments. (2) Even though the VBM of BSe-MoS2 are completely contributed by BSe, the heterostructure is still endowed with a lower effective mass and a better transport characteristic in comparison with pristine structures. (3) A promoted absorption ability and a better transport characteristic oppose each other and the two characteristics cannot be obtained at the same time. (4) Tension strained structures can induce promoted light absorption in the solar spectrum and the predicted efficiency of the BSe-MoS2 bilayer can be as high as ∼19.3%, when the external electric field is applied. This theoretical survey proves that BSe-MoS2/WS2 with high flexibility and tunability are potential candidates for novel electronic devices and photocatalysts.
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Affiliation(s)
- Honglin Li
- College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331, P. R. China.
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22
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Xu Y, Liu Y, Chen Y, Zhang Y, Ma C, Zhang H, Sun S, Ji Y. Two-Dimensional Direct Semiconductor Boron Monochalcogenide γ-BTe: Room-Temperature Single-Bound Exciton and Novel Donor Material in Excitonic Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2020; 12:58349-58359. [PMID: 33326219 DOI: 10.1021/acsami.0c15999] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Recently, excitonic solar cells (XSCs) with high photovoltaic performance have raised research interests because of their high power conversion efficiencies (PCEs). Herein, by using first-principles calculations, we predict that γ-BX (X = S, Se, Te) monolayers are direct semiconductors with the band gaps of 2.94, 2.71, and 1.32 eV, respectively, and maintain semiconduction in the broad strain range of 0% ≤ δ ≤ 5%. The moderate direct band gap, high transport property, dramatically high absorption from visible to the ultraviolet region, and extraordinary excitonic behavior of monolayer γ-BTe, render it promising for next-generation optoelectronic and photovoltaic devices. By choosing monolayer GeP2 as a proper acceptor material, the practical upper limit of PCE for the heterobilayers of γ-BTe/GeP2 reaches up to 21.76% (22.95% under strain), comparable to typical heterobilayer solar cells, making it a competitive donor material for photovoltaic device applications.
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Affiliation(s)
- Yuanfeng Xu
- School of Science, Shandong Jianzhu University, Jinan 250101, Shandong, China
| | - Yifan Liu
- School of Science, Shandong Jianzhu University, Jinan 250101, Shandong, China
| | - Ying Chen
- Academy for Engineering and Technology, and Engineering Research Center of Advanced Lighting Technology, Ministry of Education, Fudan University, Shanghai 200433, China
| | - Yiming Zhang
- Key Laboratory for Information Science of Electromagnetic Waves (MoE), Key Laboratory of Micro and Nano Photonic Structures (MoE) and Department of Optical Science and Engineering, Fudan University, Shanghai 200433, China
| | - Congcong Ma
- Academy for Engineering and Technology, and Engineering Research Center of Advanced Lighting Technology, Ministry of Education, Fudan University, Shanghai 200433, China
| | - Hao Zhang
- Key Laboratory for Information Science of Electromagnetic Waves (MoE), Key Laboratory of Micro and Nano Photonic Structures (MoE) and Department of Optical Science and Engineering, Fudan University, Shanghai 200433, China
| | - Songsong Sun
- School of Science, Shandong Jianzhu University, Jinan 250101, Shandong, China
| | - Yanju Ji
- School of Science, Shandong Jianzhu University, Jinan 250101, Shandong, China
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23
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Gao Y, Wu K, Hu W, Yang J. Highly efficient heterojunction solar cells enabled by edge-modified tellurene nanoribbons. Phys Chem Chem Phys 2020; 22:28414-28422. [PMID: 33305303 DOI: 10.1039/d0cp04973e] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Tellurene, a two-dimensional (2D) semiconductor, meets the requirements for optoelectronic applications with desirable properties, such as a suitable band gap, high carrier mobility, strong visible light absorption and high air stability. Here, we demonstrate that the band engineering of zigzag tellurene nanoribbons (ZTNRs) via edge-modification can be used to construct highly efficient heterojunction solar cells by using first-principles density functional theory (DFT) calculations. We find that edge-modification enhances the stability of ZTNRs and halogen-modified ZTNRs showing suitable band gaps (1.35-1.53 eV) for sunlight absorption. Furthermore, the band gaps of ZTNRs with tetragonal edges do not strongly depend on the edge-modification and ribbon width, which is conducive to experimental realization. The heterojunctions constructed by halogen-modified ZTNRs show desirable type 2 band alignments and small band offsets with reduced band gaps and enhanced sunlight absorption, resulting in high power conversion efficiency (PCE) in heterojunction solar cells. In particular, the calculated maximum PCE of designed heterojunction solar cells based on halogen-modified ZTNRs can reach as high as 22.6%.
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Affiliation(s)
- Yunzhi Gao
- Department of Chemical Physics, Hefei National Laboratory for Physical Sciences at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China.
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24
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Dou W, Huang A, Ji Y, Yang X, Xin Y, Shi H, Wang M, Xiao Z, Zhou M, Chu PK. Strain-enhanced power conversion efficiency of a BP/SnSe van der Waals heterostructure. Phys Chem Chem Phys 2020; 22:14787-14795. [DOI: 10.1039/d0cp02163f] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The BP/SnSe vdW heterostructure is a promising photovoltaic materials and the power conversion efficiency can reach to 17.24%.
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Affiliation(s)
- Wenzhen Dou
- School of Physics
- Beihang University
- Beijing 100191
- China
| | - Anping Huang
- School of Physics
- Beihang University
- Beijing 100191
- China
| | - Yuhang Ji
- School of Physics
- Beihang University
- Beijing 100191
- China
| | - Xiaodong Yang
- School of Physics
- Nanjing University
- Nanjing 210093
- China
| | - Yanbo Xin
- School of Physics
- Beihang University
- Beijing 100191
- China
| | - Hongliang Shi
- School of Physics
- Beihang University
- Beijing 100191
- China
| | - Mei Wang
- School of Physics
- Beihang University
- Beijing 100191
- China
| | - Zhisong Xiao
- School of Physics
- Beihang University
- Beijing 100191
- China
| | - Miao Zhou
- School of Physics
- Beihang University
- Beijing 100191
- China
| | - Paul K. Chu
- Department of Physics
- Department of Materials Science and Engineering, and Department of Biomedical Engineering
- City University of Hong Kong
- Kowloon
- China
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25
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Liu X, Ren JC, Shen T, Li S, Liu W. Lateral InSe p-n Junction Formed by Partial Doping for Use in Ultrathin Flexible Solar Cells. J Phys Chem Lett 2019; 10:7712-7718. [PMID: 31769691 DOI: 10.1021/acs.jpclett.9b03184] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Two-dimensional InSe possesses good electrical conductivity, intrinsic and structural flexibility, high chemical stability, and a tunable band gap, enabling it to be a promising candidate for flexible and wearable solar cells. Here we construct a lateral p-n junction by partially doping molybdenum trioxide (MoO3) at the surface of the InSe monolayer. Our density functional theory calculations reveal that the strong hybridization between MoO3 and InSe induces a lateral built-in electric field in the partially doped substrate and promotes the effective separation of carriers. Under a large range of external stains, the doped InSe can maintain the direct band gap, and the lateral structure device exhibits power conversion efficiencies over 5% and high carrier mobility around 1000 cm2 V-1 s-1. In particular, a power conversion efficiency of 20.7% can be achieved with 10% compressive strain. The partially doped InSe monolayer is expected to be used as an ultrathin flexible solar cell.
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Affiliation(s)
- Xinyi Liu
- Nano and Heterogeneous Materials Center, School of Materials Science and Engineering , Nanjing University of Science and Technology , Nanjing 210094 , China
| | - Ji-Chang Ren
- Nano and Heterogeneous Materials Center, School of Materials Science and Engineering , Nanjing University of Science and Technology , Nanjing 210094 , China
| | - Tao Shen
- Nano and Heterogeneous Materials Center, School of Materials Science and Engineering , Nanjing University of Science and Technology , Nanjing 210094 , China
| | - Shuang Li
- Nano and Heterogeneous Materials Center, School of Materials Science and Engineering , Nanjing University of Science and Technology , Nanjing 210094 , China
| | - Wei Liu
- Nano and Heterogeneous Materials Center, School of Materials Science and Engineering , Nanjing University of Science and Technology , Nanjing 210094 , China
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26
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Wei W, Huang B, Dai Y. Photoexcited charge carrier behaviors in solar energy conversion systems from theoretical simulations. WILEY INTERDISCIPLINARY REVIEWS-COMPUTATIONAL MOLECULAR SCIENCE 2019. [DOI: 10.1002/wcms.1441] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
Affiliation(s)
- Wei Wei
- School of Physics, State Key Laboratory of Crystal Materials Shandong University Jinan China
| | - Baibiao Huang
- School of Physics, State Key Laboratory of Crystal Materials Shandong University Jinan China
| | - Ying Dai
- School of Physics, State Key Laboratory of Crystal Materials Shandong University Jinan China
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27
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Cai X, Chen Y, Sun B, Chen J, Wang H, Ni Y, Tao L, Wang H, Zhu S, Li X, Wang Y, Lv J, Feng X, Redfern SAT, Chen Z. Two-dimensional Blue-AsP monolayers with tunable direct band gap and ultrahigh carrier mobility show promising high-performance photovoltaic properties. NANOSCALE 2019; 11:8260-8269. [PMID: 30976766 DOI: 10.1039/c9nr01261c] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The successful fabrication of black phosphorene (Black-P) in 2014 and subsequent synthesis of layered black As1-xPx alloys have inspired research into two-dimensional (2D) binary As-P compounds. The very recent success in growing blue phosphorene (Blue-P) further motivated exploration of 2D Blue-AsP materials. Here, using ab initio swarm-intelligence global minimum structure-searching methods, we have obtained a series of novel and energetically favored 2D Blue-AsP (denoted x-AsP, x = I, II, III, IV, V) compounds with As : P = 1 : 1 stoichiometry. They display similar honeycomb structures to Blue-P. Remarkably, the lowest-energy AsP monolayer, namely I-AsP, not only possesses a quasi-direct band gap (2.41 eV), which can be tuned to a direct and optimal gap for photovoltaic applications by in-plane strain, but also has an ultrahigh electronic mobility up to ∼7.4 × 104 cm2 V-1 s-1, far surpassing that of Blue-P, and also exhibits high absorption coefficients (×105 cm-1). Our simulations also show that 30 nm-thick I-AsP sheet-based cells have photovoltaic efficiency as high as ∼12%, and the I-AsP/CdSe heterostructure solar cells possess a power conversion efficiency as high as ∼13%. All these outstanding characteristics suggest the I-AsP sheet as a promising material for high-efficiency solar cells.
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Affiliation(s)
- Xinyong Cai
- School of Physical Science and Technology, Key Laboratory of Advanced Technologies of Materials, Ministry of Education of China, Southwest Jiaotong University, Chengdu 610031, China.
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28
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Chen J, He X, Sa B, Zhou J, Xu C, Wen C, Sun Z. III-VI van der Waals heterostructures for sustainable energy related applications. NANOSCALE 2019; 11:6431-6444. [PMID: 30888370 DOI: 10.1039/c9nr00421a] [Citation(s) in RCA: 36] [Impact Index Per Article: 7.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
van der Waals (vdW) heterostructures, achieved by binding various two-dimensional (2D) materials together via vdW interaction, expand the family of 2D materials and show fascinating possibilities. In this work, we have systematically investigated the geometrical structures, electronic structures, and optical properties of III-VI (MX, M = Ga, In and X = S, Se, Te) vdW heterostructures and their corresponding applications in sustainable energy related areas based on first principles calculations. It is highlighted that different heterostructure types can be achieved in spite of the similar electronic structures of MX monolayers. Meanwhile, the potential applications of the heterostructures for sustainable energy related areas have been further unraveled. For instance, type-II InS/GaSe and GaS/GaSe vdW heterostructures can separately produce hydrogen and oxygen at the opposite parts. On the other hand, a type-II GaSe/GaTe heterostructure with a direct band gap compatible with silicon has been proposed to be a potential solar cell material with a power conversion efficiency over 18%. Furthermore, a gapless type-IV semi-metallic InTe/GaS heterostructure has been predicted to be a Li-ion battery anode material based on three-step lithiated analysis. The present results will shed light on the sustainable energy applications of such remarkable artificial MX vdW heterostructures in the future.
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Affiliation(s)
- Jianhui Chen
- Key Laboratory of Eco-materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, P. R. China.
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Lai K, Li H, Xu YK, Zhang WB, Dai J. Achieving a direct band gap and high power conversion efficiency in an SbI 3/BiI 3 type-II vdW heterostructure via interlayer compression and electric field application. Phys Chem Chem Phys 2019; 21:2619-2627. [PMID: 30657497 DOI: 10.1039/c8cp07298a] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Type-II van der Waals (vdW) heterostructures are considered as a class of competitive candidates of high-efficiency photovoltaic materials, due to their spontaneous electron-hole separation. However, most of the vdW heterostructures possess an indirect gap and a large band offset, which would lead to low photon-to-electron conversion efficiency. Taking an SbI3/BiI3 vdW heterostructure as an illustrative example, we propose interlayer compression and vertical electric field application as two effective strategies to modulate the electronic and photovoltaic properties of type-II vdW heterostructures. Our results reveal that a lattice-matched SbI3/BiI3 vdW heterostructure has an indirect band gap of 1.34 eV with the conduction band minimum (CBM) at the Γ point and the valence band maximum (VBM) between the Γ and M points. The power conversion efficiency (PCE) of an SbI3/BiI3-based excitonic solar cell (XSC) is predicted to be about 14.42%. When compressing the heterostructure along the vdW gap direction, the highest valence band state at the Γ point is lifted significantly and the VBM gradually approaches the Γ point, implying an indirect-direct gap transition. This interesting evolution can be attributed to the increasing k-dependent electronic hybridization of the pz orbitals of interlayer adjacent I atoms with a reduced interlayer distance. Moreover, the interlayer compression also enhances the PCE of the system monotonically. When applying a vertical electric field, the band alignment of the heterostructure undergoes a transition from type-II to type-I and then returns to type-II between 0.1 and 0.6 V Å-1. Meanwhile, the PCE of the SbI3/BiI3 XSC could be enhanced up to 21.63%. This work provides guidance for improving the electronic and photovoltaic properties of type-II vdW heterostructures.
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Affiliation(s)
- Kang Lai
- School of Physics and Electronic Sciences, Changsha University of Science and Technology, Changsha 410114, People's Republic of China
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30
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Shu H, Wang Y, Sun M. Enhancing electronic and optical properties of monolayer MoSe2via a MoSe2/blue phosphorene heterobilayer. Phys Chem Chem Phys 2019; 21:15760-15766. [DOI: 10.1039/c9cp02743b] [Citation(s) in RCA: 46] [Impact Index Per Article: 9.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/11/2023]
Abstract
Type-II heterostructures are appealing for application in optoelectronics due to their effective separation of photogenerated charge carriers.
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Affiliation(s)
- Huabing Shu
- School of Science
- Jiangsu University of Science and Technology
- Zhenjiang 212001
- China
| | - Ying Wang
- School of Science
- Jiangsu University of Science and Technology
- Zhenjiang 212001
- China
| | - Minglei Sun
- School of Mechanical Engineering
- Southeast University
- Nanjing 211189
- China
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31
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Kar M, Rajbanshi B, Sarkar R, Pal S, Sarkar P. Periodically-ordered one and two dimensional CdTe QD superstructures: a path forward in photovoltaics. Phys Chem Chem Phys 2019; 21:19391-19402. [DOI: 10.1039/c9cp03529j] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/25/2022]
Abstract
By using the state-of-the-art theoretical method, we herein explore the potentiality of covalently linked periodically-ordered 1D chain, 2D hexagonal and square ordered superstructures of CdTe QDs in photovoltaics.
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Affiliation(s)
- Moumita Kar
- Department of Chemistry
- Visva-Bharati University
- Santiniketan-731235
- India
| | - Biplab Rajbanshi
- Department of Chemistry
- Visva-Bharati University
- Santiniketan-731235
- India
| | - Ritabrata Sarkar
- Department of Chemistry
- University of Gour Banga
- Malda-732103
- India
| | - Sougata Pal
- Department of Chemistry
- University of Gour Banga
- Malda-732103
- India
| | - Pranab Sarkar
- Department of Chemistry
- Visva-Bharati University
- Santiniketan-731235
- India
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32
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Physical Properties and Photovoltaic Application of Semiconducting Pd₂Se₃ Monolayer. NANOMATERIALS 2018; 8:nano8100832. [PMID: 30322195 PMCID: PMC6215269 DOI: 10.3390/nano8100832] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/18/2018] [Revised: 10/04/2018] [Accepted: 10/13/2018] [Indexed: 11/17/2022]
Abstract
Palladium selenides have attracted considerable attention because of their intriguing properties and wide applications. Motivated by the successful synthesis of Pd₂Se₃ monolayer (Lin et al., Phys. Rev. Lett., 2017, 119, 016101), here we systematically study its physical properties and device applications using state-of-the-art first principles calculations. We demonstrate that the Pd₂Se₃ monolayer has a desirable quasi-direct band gap (1.39 eV) for light absorption, a high electron mobility (140.4 cm²V-1s-1) and strong optical absorption (~10⁵ cm-1) in the visible solar spectrum, showing a great potential for absorber material in ultrathin photovoltaic devices. Furthermore, its bandgap can be tuned by applying biaxial strain, changing from indirect to direct. Equally important, replacing Se with S results in a stable Pd₂S₃ monolayer that can form a type-II heterostructure with the Pd₂Se₃ monolayer by vertically stacking them together. The power conversion efficiency (PCE) of the heterostructure-based solar cell reaches 20%, higher than that of MoS₂/MoSe₂ solar cell. Our study would motivate experimental efforts in achieving Pd₂Se₃ monolayer-based heterostructures for new efficient photovoltaic devices.
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33
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Linghu J, Yang T, Luo Y, Yang M, Zhou J, Shen L, Feng YP. High-Throughput Computational Screening of Vertical 2D van der Waals Heterostructures for High-efficiency Excitonic Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2018; 10:32142-32150. [PMID: 30178655 DOI: 10.1021/acsami.8b09454] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
As an effort to identify van der Waals heterostructures for efficient excitonic solar cell application, high-throughput computational screening was carried out to study the band alignments of 1540 vertical heterostructures formed by 56 two-dimensional semiconducting/insulating materials. More than 90 heterostructures with estimated power conversion efficiency (PCE) higher than 15% have been identified, of which 17 heterostructures are predicted to have PCE higher than the best value (20%) reported or proposed in the literature.
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Affiliation(s)
- Jiajun Linghu
- Department of Applied Physics , Chang'an University , 710064 Xi'an , China
- Department of Physics , National University of Singapore , 2 Science Drive 3 , 117551 Singapore , Singapore
| | - Tong Yang
- Department of Physics , National University of Singapore , 2 Science Drive 3 , 117551 Singapore , Singapore
| | - Yongzheng Luo
- Department of Physics , National University of Singapore , 2 Science Drive 3 , 117551 Singapore , Singapore
| | - Ming Yang
- Institute of Materials Research and Engineering, A*-STAR , 2 Fusionopolis Way , 138634 Singapore , Singapore
| | - Jun Zhou
- Department of Physics , National University of Singapore , 2 Science Drive 3 , 117551 Singapore , Singapore
| | - Lei Shen
- Department of Mechanical Engineering , National University of Singapore , 9 Engineering Drive 1 , 117575 Singapore , Singapore
| | - Yuan Ping Feng
- Department of Physics , National University of Singapore , 2 Science Drive 3 , 117551 Singapore , Singapore
- Centre for Advanced 2D Materials , National University of Singapore , 6 Science Drive 2 , 117546 Singapore , Singapore
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34
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Ding Y, Wang Y. Stable H-Terminated Edges, Variable Semiconducting Properties, and Solar Cell Applications of C 3N Nanoribbons: A First-Principles Study. ACS OMEGA 2018; 3:8777-8786. [PMID: 31459010 PMCID: PMC6645292 DOI: 10.1021/acsomega.8b01391] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/19/2018] [Accepted: 07/26/2018] [Indexed: 06/09/2023]
Abstract
Motivated by the recent synthesis of the graphene-like C3N nanosheet, the geometrical structures and electronic properties of its ribbon form, that is, C3N nanoribbons (C3NNRs), are investigated by first-principles calculations. It is found that there are five types of energetically favorable H-terminated edges in the C3NNRs. Different from graphene nanoribbons, the corresponding stable C3NNRs are all nonmagnetic semiconductors regardless of the edge shape and termination. However, their band feature and gap size can be modulated by the ribbon width and edge termination, which brings direct-, quasi-direct-, and indirect-band-gap semiconducting behaviors in the nanoribbons. Comparing to the C3N nanosheet, the work function is reduced in the C3NNRs with fully di- and monohydrogenated edges, which results in a type-II band alignment with SiC and silicane nanosheets. More interestingly, the combined hetero-nanostructures will be promising excitonic solar cell materials with high power conversion efficiencies up to 17-21%. Our study demonstrates that the C3NNRs have distinct edge stabilities and variable semiconducting behaviors, which endow fascinating potential applications in the fields of solar energy and nanodevices.
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Affiliation(s)
- Yi Ding
- Department
of Physics, Hangzhou Normal University, Hangzhou, Zhejiang 310036, People’s Republic
of China
| | - Yanli Wang
- Department
of Physics, Center for Optoelectronics Materials and Devices, Zhejiang Sci-Tech University, Xiasha College Park, Hangzhou, Zhejiang 310018, People’s Republic of China
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35
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Macedo LJA, Lima FCDA, Amorim RG, Freitas RO, Yadav A, Iost RM, Balasubramanian K, Crespilho FN. Interplay of non-uniform charge distribution on the electrochemical modification of graphene. NANOSCALE 2018; 10:15048-15057. [PMID: 30052241 DOI: 10.1039/c8nr03893g] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Graphene is considered a model material for surfaces because it is stable despite being composed of a single layer of carbon atoms. Although the thermal and electronic properties of graphene are well reported, the behavior of graphene sheets with the addition of charges to the structure is not well understood. Combining infrared spectroscopy, electrochemical analysis, and computational simulations, we report the effect of an electrochemically induced covalent anchoring of 4-carboxyphenyl (4-CP) units on the optical and electronic properties of graphene. Charges in graphene become concentrated at specific sites of the sheet when electrochemically perturbed and the functionalization occurs inhomogeneously along the graphene sheet. We observed that, when graphene is covalently functionalized, the resistance to heterogeneous electron transfer is increased by a factor of 1.4. Furthermore, scattering-type scanning near-field optical microscopy and atomic force microscopy show that the covalent functionalization affects drastically the optical and physical properties of the graphene/SiO2 system, especially the plasmon-phonon coupling after the functionalization. In addition, from these we infer that a comparatively higher degree of functionalization occurs near the electrode edges. These results are supported by computational simulations, which show that the covalent anchoring of 4-CP units weakens electron transfer because the charges are retained on the sp3-hybridized carbon atoms generated upon functionalization, suggesting that graphene properties are deeply influenced by the way the molecules are immobilized on its structure.
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Affiliation(s)
- Lucyano J A Macedo
- São Carlos Institute of Chemistry, University of São Paulo, São Paulo 13560-970, Brazil.
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36
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Zhao Q, Guo Y, Zhou Y, Yao Z, Ren Z, Bai J, Xu X. Band alignments and heterostructures of monolayer transition metal trichalcogenides MX 3 (M = Zr, Hf; X = S, Se) and dichalcogenides MX 2 (M = Tc, Re; X=S, Se) for solar applications. NANOSCALE 2018; 10:3547-3555. [PMID: 29411004 DOI: 10.1039/c7nr08413g] [Citation(s) in RCA: 25] [Impact Index Per Article: 4.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2023]
Abstract
Knowledge of band alignments and heterostructure formations is fundamental for a new generation of optoelectronics based on two-dimensional layered materials. Herein, band alignments and heterostructures of IVB-VIA monolayer MX3 (M = Zr, Hf; X = S, Se) and VIIB-VIA monolayer MX2 (M = Tc, Re; X = S, Se) are calculated by density functional theory with hybrid functionals. The results indicate that for monolayer MX3, the valence bands mainly depend on the p state of the chalcogens and the conduction bands mainly depend on the d state of the transition metals. In contrast, for monolayer MX2, both valence and conduction bands depend on the d state of the transition metals. This suggests that their work functions are obviously different. Meanwhile, the characteristics of the band alignments and the planar-averaged local density of states show that ZrS3, HfS3, TcSe2 and ReS2 could be favorable candidates for photocatalytic water splitting. ZrS3, HfS3 and MX2 with the same structures are able to form type II heterostructures at their interfaces, which could be used for solar energy conversion. The power-conversion efficiency of an MX3 thin-film solar cell is approximately 16-18%, which is higher than those of MX2 thin-film solar cells. In addition, for heterostructures composed of MX3, both of the two kinds of material (M and X) play an important role in every band formation. Meanwhile, for MX2 heterostructures, almost every band depends only on a single material. The charge density difference of the heterostructures demonstrates a higher charge accumulation at the interface of MX3 heterostructures than that of MX2 heterostructures. These phenomena show that type II heterostructures formed of MX3 are more stable than those of MX2.
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Affiliation(s)
- Qiyi Zhao
- Shaanxi Joint Lab of Graphene, State Key Lab Incubation Base of Photoelectric Technology and Functional Materials, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon-Technology, Northwest University, Xi'an 710069, China.
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37
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Yuan L, Chung TF, Kuc A, Wan Y, Xu Y, Chen YP, Heine T, Huang L. Photocarrier generation from interlayer charge-transfer transitions in WS 2-graphene heterostructures. SCIENCE ADVANCES 2018; 4:e1700324. [PMID: 29423439 PMCID: PMC5804583 DOI: 10.1126/sciadv.1700324] [Citation(s) in RCA: 75] [Impact Index Per Article: 12.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/31/2017] [Accepted: 01/02/2018] [Indexed: 05/23/2023]
Abstract
Efficient interfacial carrier generation in van der Waals heterostructures is critical for their electronic and optoelectronic applications. We demonstrate broadband photocarrier generation in WS2-graphene heterostructures by imaging interlayer coupling-dependent charge generation using ultrafast transient absorption microscopy. Interlayer charge-transfer (CT) transitions and hot carrier injection from graphene allow carrier generation by excitation as low as 0.8 eV below the WS2 bandgap. The experimentally determined interlayer CT transition energies are consistent with those predicted from the first-principles band structure calculation. CT interactions also lead to additional carrier generation in the visible spectral range in the heterostructures compared to that in the single-layer WS2 alone. The lifetime of the charge-separated states is measured to be ~1 ps. These results suggest that interlayer interactions make graphene-two-dimensional semiconductor heterostructures very attractive for photovoltaic and photodetector applications because of the combined benefits of high carrier mobility and enhanced broadband photocarrier generation.
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Affiliation(s)
- Long Yuan
- Department of Chemistry, Purdue University, West Lafayette, IN 47907, USA
| | - Ting-Fung Chung
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN 47907, USA
- Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907, USA
| | - Agnieszka Kuc
- Wilhelm-Ostwald-Institut für Physikalische und Theoretische Chemie, Universität Leipzig, 04103 Leipzig, Germany
- Department of Physics & Earth Science, Jacobs University Bremen, 28759 Bremen, Germany
| | - Yan Wan
- Department of Chemistry, Purdue University, West Lafayette, IN 47907, USA
| | - Yang Xu
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN 47907, USA
- Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907, USA
| | - Yong P Chen
- Department of Physics and Astronomy, Purdue University, West Lafayette, IN 47907, USA
- Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907, USA
- School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, USA
| | - Thomas Heine
- Wilhelm-Ostwald-Institut für Physikalische und Theoretische Chemie, Universität Leipzig, 04103 Leipzig, Germany
- Department of Physics & Earth Science, Jacobs University Bremen, 28759 Bremen, Germany
| | - Libai Huang
- Department of Chemistry, Purdue University, West Lafayette, IN 47907, USA
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38
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Vovusha H, Amorim RG, Scheicher RH, Sanyal B. Controlling the orientation of nucleobases by dipole moment interaction with graphene/h-BN interfaces. RSC Adv 2018; 8:6527-6531. [PMID: 35540402 PMCID: PMC9078367 DOI: 10.1039/c7ra11664k] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/22/2017] [Accepted: 02/01/2018] [Indexed: 01/04/2023] Open
Abstract
The interfaces in 2D hybrids of graphene and h-BN provide interesting possibilities of adsorbing and manipulating atomic and molecular entities. In this paper, with the aid of density functional theory, we demonstrate the adsorption characteristics of DNA nucleobases at different interfaces of 2D hybrid nanoflakes of graphene and h-BN. The interfaces provide stronger binding to the nucleobases in comparison to pure graphene and h-BN nanoflakes. It is also revealed that the individual dipole moments of the nucleobases and nanoflakes dictate the orientation of the nucleobases at the interfaces of the hybrid structures. The results of our study point towards a possible route to selectively control the orientation of individual molecules in biosensors. The interfaces in 2D hybrids of graphene and h-BN provide interesting possibilities of adsorbing and manipulating atomic and molecular entities.![]()
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Affiliation(s)
- Hakkim Vovusha
- Division of Materials Theory
- Department of Physics and Astronomy
- Uppsala University
- SE-751 20 Uppsala
- Sweden
| | - Rodrigo G. Amorim
- Division of Materials Theory
- Department of Physics and Astronomy
- Uppsala University
- SE-751 20 Uppsala
- Sweden
| | - Ralph H. Scheicher
- Division of Materials Theory
- Department of Physics and Astronomy
- Uppsala University
- SE-751 20 Uppsala
- Sweden
| | - Biplab Sanyal
- Division of Materials Theory
- Department of Physics and Astronomy
- Uppsala University
- SE-751 20 Uppsala
- Sweden
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39
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Hu W, Lin L, Zhang R, Yang C, Yang J. Highly Efficient Photocatalytic Water Splitting over Edge-Modified Phosphorene Nanoribbons. J Am Chem Soc 2017; 139:15429-15436. [DOI: 10.1021/jacs.7b08474] [Citation(s) in RCA: 190] [Impact Index Per Article: 27.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/23/2022]
Affiliation(s)
- Wei Hu
- Computational
Research Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Lin Lin
- Computational
Research Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Department
of Mathematics, University of California, Berkeley, California 94720, United States
| | - Ruiqi Zhang
- Hefei
National Laboratory for Physical Sciences at Microscale, Department
of Chemical Physics, and Synergetic Innovation Center of Quantum Information
and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Chao Yang
- Computational
Research Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Jinlong Yang
- Hefei
National Laboratory for Physical Sciences at Microscale, Department
of Chemical Physics, and Synergetic Innovation Center of Quantum Information
and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
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40
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Correa JD, Orellana PA, Pacheco M. Optoelectronic Properties of Van Der Waals Hybrid Structures: Fullerenes on Graphene Nanoribbons. NANOMATERIALS 2017; 7:nano7030069. [PMID: 28336904 PMCID: PMC5388171 DOI: 10.3390/nano7030069] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/18/2016] [Revised: 02/16/2017] [Accepted: 03/01/2017] [Indexed: 01/26/2023]
Abstract
The search for new optical materials capable of absorbing light in the frequency range from visible to near infrared is of great importance for applications in optoelectronic devices. In this paper, we report a theoretical study of the electronic and optical properties of hybrid structures composed of fullerenes adsorbed on graphene and on graphene nanoribbons. The calculations are performed in the framework of the density functional theory including the van der Waals dispersive interactions. We found that the adsorption of the C 60 fullerenes on a graphene layer does not modify its low energy states, but it has strong consequences for its optical spectrum, introducing new absorption peaks in the visible energy region. The optical absorption of fullerenes and graphene nanoribbon composites shows a strong dependence on photon polarization and geometrical characteristics of the hybrid systems, covering a broad range of energies. We show that an external electric field across the nanoribbon edges can be used to tune different optical transitions coming from nanoribbon-fullerene hybridized states, which yields a very rich electro-absorption spectrum for longitudinally polarized photons. We have carried out a qualitative analysis on the potential of these hybrids as possible donor-acceptor systems in photovoltaic cells.
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Affiliation(s)
- Julián David Correa
- Departamento de Ciencias Básicas, Universidad de Medellín, 050026 Medellín, Colombia.
| | | | - Mónica Pacheco
- Departamento de Física, Universidad Técnica Federico Santa María, 2340000 Valparaíso, Chile.
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41
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Wang H, Li X, Liu Z, Yang J. ψ-Phosphorene: a new allotrope of phosphorene. Phys Chem Chem Phys 2017; 19:2402-2408. [DOI: 10.1039/c6cp07944j] [Citation(s) in RCA: 58] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Proposal of a new phosphorene allotrope with suitable geometrical and electronic properties for application in gas purification and solar cells.
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Affiliation(s)
- Haidi Wang
- Hefei National Laboratory for Physical Sciences at the Microscale
- University of Science and Technology of China
- Hefei
- China
| | - Xingxing Li
- Hefei National Laboratory for Physical Sciences at the Microscale
- University of Science and Technology of China
- Hefei
- China
- Synergetic Innovation Center of Quantum Information & Quantum Physics
| | - Zhao Liu
- Hefei National Laboratory for Physical Sciences at the Microscale
- University of Science and Technology of China
- Hefei
- China
| | - Jinlong Yang
- Hefei National Laboratory for Physical Sciences at the Microscale
- University of Science and Technology of China
- Hefei
- China
- Synergetic Innovation Center of Quantum Information & Quantum Physics
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42
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Batmunkh M, Bat-Erdene M, Shapter JG. Phosphorene and Phosphorene-Based Materials - Prospects for Future Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2016; 28:8586-8617. [PMID: 27435365 DOI: 10.1002/adma.201602254] [Citation(s) in RCA: 163] [Impact Index Per Article: 20.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/27/2016] [Revised: 06/03/2016] [Indexed: 05/23/2023]
Abstract
Phosphorene, a single- or few-layered semiconductor material obtained from black phosphorus, has recently been introduced as a new member of the family of two-dimensional (2D) layered materials. Since its discovery, phosphorene has attracted significant attention, and due to its unique properties, is a promising material for many applications including transistors, batteries and photovoltaics (PV). However, based on the current progress in phosphorene production, it is clear that a lot remains to be explored before this material can be used for these applications. After providing a comprehensive overview of recent advancements in phosphorene synthesis, advantages and challenges of the currently available methods for phosphorene production are discussed. An overview of the research progress in the use of phosphorene for a wide range of applications is presented, with a focus on enabling important roles that phosphorene would play in next-generation PV cells. Roadmaps that have the potential to address some of the challenges in phosphorene research are examined because it is clear that the unprecedented chemical, physical and electronic properties of phosphorene and phosphorene-based materials are suitable for various applications, including photovoltaics.
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Affiliation(s)
- Munkhbayar Batmunkh
- School of Chemical and Physical Sciences, Flinders University, Bedford Park, Adelaide, South Australia, 5042, Australia
- School of Chemical Engineering, The University of Adelaide, Adelaide, South Australia, 5005, Australia
| | - Munkhjargal Bat-Erdene
- School of Chemical and Physical Sciences, Flinders University, Bedford Park, Adelaide, South Australia, 5042, Australia
| | - Joseph G Shapter
- School of Chemical and Physical Sciences, Flinders University, Bedford Park, Adelaide, South Australia, 5042, Australia.
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43
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Hu W, Lin L, Yang C, Dai J, Yang J. Edge-Modified Phosphorene Nanoflake Heterojunctions as Highly Efficient Solar Cells. NANO LETTERS 2016; 16:1675-1682. [PMID: 26848505 DOI: 10.1021/acs.nanolett.5b04593] [Citation(s) in RCA: 45] [Impact Index Per Article: 5.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
We propose to use edge-modified phosphorene nanoflakes (PNFs) as donor and acceptor materials for heterojunction solar cells. By using density functional theory based calculations, we show that heterojunctions consisting of hydrogen- and fluorine-passivated PNFs have a number of desired optoelectronic properties that are suitable for use in a solar cell. We explain why these properties hold for these types of heterojunctions. Our calculations also predict that the maximum energy conversion efficiency of these type of heterojunctions, which can be easily fabricated, can be as high as 20%, making them extremely competitive with other types of two-dimensional heterojunctions.
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Affiliation(s)
- Wei Hu
- Computational Research Division, Lawrence Berkeley National Laboratory , 1 Cyclotron Road, Berkeley, California 94720, United States
| | - Lin Lin
- Computational Research Division, Lawrence Berkeley National Laboratory , 1 Cyclotron Road, Berkeley, California 94720, United States
- Department of Mathematics, University of California , 1083 Evans Hall, Berkeley, California 94720, United States
| | - Chao Yang
- Computational Research Division, Lawrence Berkeley National Laboratory , 1 Cyclotron Road, Berkeley, California 94720, United States
| | - Jun Dai
- Department of Chemistry and Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln , 536 Hamilton Hall, Lincoln, Nebraska 68588, United States
| | - Jinlong Yang
- Hefei National Laboratory for Physical Sciences at Microscale, Department of Chemical Physics, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China , 96 JinZhai Road, Hefei, Anhui 230026, China
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Bhatia P, Swaroop R, Kumar A. Tunable electronic and dielectric properties of β-phosphorene nanoflakes for optoelectronic applications. RSC Adv 2016. [DOI: 10.1039/c6ra16534f] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
Electronic and dielectric properties of β-phosphorene nanoflakes in various configurations using density functional theory are reported. The tunable energy gap and dielectric response make these nanoflakes potential candidates for optoelectronic device applications.
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Affiliation(s)
- Pradeep Bhatia
- Centre for Physical Sciences
- School of Basic and Applied Sciences
- Central University of Punjab
- Bathinda-151001
- India
| | - Ram Swaroop
- Centre for Physical Sciences
- School of Basic and Applied Sciences
- Central University of Punjab
- Bathinda-151001
- India
| | - Ashok Kumar
- Centre for Physical Sciences
- School of Basic and Applied Sciences
- Central University of Punjab
- Bathinda-151001
- India
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Kan M, Li Y, Sun Q. Recent advances in hybrid graphene-BN planar structures. WILEY INTERDISCIPLINARY REVIEWS-COMPUTATIONAL MOLECULAR SCIENCE 2015. [DOI: 10.1002/wcms.1237] [Citation(s) in RCA: 22] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/10/2022]
Affiliation(s)
- Min Kan
- Department of Materials Science and Engineering; Peking University; Beijing China
- Kuang-Chi Institute of Advanced Technology; ShenZhen China
| | - Yawei Li
- Department of Materials Science and Engineering; Peking University; Beijing China
- Center for Applied Physics and Technology; Peking University; Beijing China
| | - Qiang Sun
- Department of Materials Science and Engineering; Peking University; Beijing China
- Center for Applied Physics and Technology; Peking University; Beijing China
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Nandwana D, Ertekin E. Ripples, strain, and misfit dislocations: structure of graphene-boron nitride superlattice interfaces. NANO LETTERS 2015; 15:1468-1475. [PMID: 25647719 DOI: 10.1021/nl505005t] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
In recently synthesized two-dimensional superlattices of graphene and boron nitride, the atomic structure of the interface is complicated by a 2% lattice mismatch between the two materials. Using atomistic and continuum analysis, we show that the mismatch results in a competition between two strain-relieving mechanisms: misfit dislocations and rippling. For flat superlattices, beyond a critical pitch the interface is decorated by strain-relieving misfit dislocations. For superlattices that can deform out-of-plane, optimal ripple wavelengths emerge.
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Affiliation(s)
- Dinkar Nandwana
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign , 1206 West Green Street, Urbana, Illinois 61801, United States
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Ding Y, Wang Y. Unusual structural and electronic properties of porous silicene and germanene: insights from first-principles calculations. NANOSCALE RESEARCH LETTERS 2015; 10:13. [PMID: 25852311 PMCID: PMC4312312 DOI: 10.1186/s11671-014-0704-3] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/04/2014] [Accepted: 12/23/2014] [Indexed: 06/04/2023]
Abstract
Using first-principles calculations, we investigate the geometric structures and electronic properties of porous silicene and germanene nanosheets, which are the Si and Ge analogues of α-graphyne (referred to as silicyne and germanyne). It is found that the elemental silicyne and germanyne sheets are energetically unfavourable. However, after the C-substitution, the hybrid graphyne-like sheets (c-silicyne/c-germanyne) possess robust energetic and dynamical stabilities. Different from silicene and germanene, c-silicyne is a flat sheet, and c-germanyne is buckled with a distinct half-hilled conformation. Such asymmetric buckling structure causes the semiconducting behaviour into c-germanyne. While in c-silicyne, the semimetallic Dirac-like property is kept at the nonmagnetic state, but a spontaneous antiferromagnetism produces the massive Dirac fermions and opens a sizeable gap between Dirac cones. A tensile strain can further enhance the antiferromagnetism, which also linearly modulates the gap value without altering the direct-bandgap feature. Through strain engineering, c-silicyne can form a type-II band alignment with the MoS 2 sheet. The combined c-silicyne/MoS 2 nanostructure has a high power conversion efficiency beyond 20% for photovoltaic solar cells, enabling a fascinating utilization in the fields of solar energy and nano-devices.
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Affiliation(s)
- Yi Ding
- />Department of Physics, Hangzhou Normal University, 16 Xuelin Street, Hangzhou, 310036 People’s Republic of China
| | - Yanli Wang
- />Department of Physics, Center for Optoelectronics Materials and Devices, Zhejiang Sci-Tech University, 5 Second Avenue, Xiasha Higher Education Zone, Hangzhou, 310018 People’s Republic of China
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Shim GW, Yoo K, Seo SB, Shin J, Jung DY, Kang IS, Ahn CW, Cho BJ, Choi SY. Large-area single-layer MoSe2 and its van der Waals heterostructures. ACS NANO 2014; 8:6655-6662. [PMID: 24987802 DOI: 10.1021/nn405685j] [Citation(s) in RCA: 65] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
Layered structures of transition metal dichalcogenides stacked by van der Waals interactions are now attracting the attention of many researchers because they have fascinating electronic, optical, thermoelectric, and catalytic properties emerging at the monolayer limit. However, the commonly used methods for preparing monolayers have limitations of low yield and poor extendibility into large-area applications. Herein, we demonstrate the synthesis of large-area MoSe2 with high quality and uniformity by selenization of MoO3 via chemical vapor deposition on arbitrary substrates such as SiO2 and sapphire. The resultant monolayer was intrinsically doped, as evidenced by the formation of charged excitons under low-temperature photoluminescence analysis. A van der Waals heterostructure of MoSe2 on graphene was also demonstrated. Interestingly, the MoSe2/graphene heterostructures show strong quenching of the characteristic photoluminescence from MoSe2, indicating the rapid transfer of photogenerated charge carriers between MoSe2 and graphene. The development of highly controlled heterostructures of two-dimensional materials will further promote advances in the physics and chemistry of reduced dimensional systems and will provide novel applications in electronics and optoelectronics.
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Affiliation(s)
- Gi Woong Shim
- Department of Electrical Engineering and Graphene Research Center, Korea Advanced Institute of Science and Technology (KAIST) , Daejeon 305-701, Republic of Korea
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Dai J, Wu X, Yang J, Zeng XC. AlxC Monolayer Sheets: Two-Dimensional Networks with Planar Tetracoordinate Carbon and Potential Applications as Donor Materials in Solar Cell. J Phys Chem Lett 2014; 5:2058-65. [PMID: 26270493 DOI: 10.1021/jz500674e] [Citation(s) in RCA: 31] [Impact Index Per Article: 3.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
We perform a global search of the most stable structures of 2D stoichiometric AlxC (x = 1/3, 1, 2, and 3) monolayer sheets. In the most stable 2D planar AlC network, every carbon atom is tetracoordinated. In addition to the structure of AlC, structures of the most stable Al2C and Al3C monolayer sheets are also predicted for the first time. AlC and Al2C monolayers are semiconducting, while Al3C monolayer is metallic. In particular, Al2C monolayer possesses a bandgap of 1.05 eV (based on HSE06 calculation), a value suitable for photovoltaic applications. Moreover, three Al2C/WSe2, Al2C/MoTe2, and AlC/ZnO van der Waals heterobilayers are investigated, and their power conversion efficiencies are estimated to be in the range of 12-18%. The near-perfect match in lattice constants between the Al2C monolayer and PdO (100) surface suggests strong likelihood of experimental realization of the Al2C monolayer on the PdO (100) substrate.
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Affiliation(s)
- Jun Dai
- †Department of Chemistry and Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln, 536 Hamilton Hall, Lincoln, Nebraska 68588, United States
| | - Xiaojun Wu
- ‡CAS Key Lab of Materials for Energy Conversion, Department of Materials Science and Engineering and Hefei National Lab for Physical Science at Microscale, University of Science and Technology of China, 96 JinZhai Road, Hefei, Anhui 230026, China
| | - Jinlong Yang
- §Department of Chemical Physics and Hefei National Lab for Physical Science at Microscale, University of Science and Technology of China, 96 JinZhai Road, Hefei, Anhui 230026, China
| | - Xiao Cheng Zeng
- †Department of Chemistry and Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln, 536 Hamilton Hall, Lincoln, Nebraska 68588, United States
- §Department of Chemical Physics and Hefei National Lab for Physical Science at Microscale, University of Science and Technology of China, 96 JinZhai Road, Hefei, Anhui 230026, China
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50
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Gan LY, Zhang Q, Cheng Y, Schwingenschlögl U. Photovoltaic Heterojunctions of Fullerenes with MoS2 and WS2 Monolayers. J Phys Chem Lett 2014; 5:1445-9. [PMID: 26269992 DOI: 10.1021/jz500344s] [Citation(s) in RCA: 43] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
First-principles calculations are performed to explore the geometry, bonding, and electronic structures of six ultrathin photovoltaic heterostructures consisting of pristine and B- or N-doped fullerenes and MoS2 or WS2 monolayers. The fullerenes prefer to be attached with a hexagon parallel to the monolayer, where B and N favor proximity to the monolayer. The main electronic properties of the subsystems stay intact, suggesting weak interfacial interaction. Both the C60/MoS2 and C60/WS2 systems show type-II band alignments. However, the built-in potential in the former case is too small to effectively drive electron-hole separation across the interface, whereas the latter system is predicted to show good photovoltaic performance. Unfortunately, B and N doping destroys the type-II band alignment on MoS2 and preserves it only in one spin channel on WS2, which is unsuitable for excitonic solar cells. Our results suggest that the C60/WS2 system is highly promising for excitonic solar cells.
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Affiliation(s)
- Li-Yong Gan
- PSE Division, KAUST, Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Qingyun Zhang
- PSE Division, KAUST, Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Yingchun Cheng
- PSE Division, KAUST, Thuwal 23955-6900, Kingdom of Saudi Arabia
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