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Chen S, Jin J, Wang W, Wang S, Du X, Wang F, Ma L, Wang J, Wang C, Zhang X, Liu Q. Thermally tunable anti-ambipolar heterojunction devices. Phys Chem Chem Phys 2024. [PMID: 39221572 DOI: 10.1039/d4cp02937b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/04/2024]
Abstract
Two-dimensional materials and their van der Waals heterostructures have emerged as a research focal point for constructing various innovative electronic devices due to their distinct photonic and electronic properties. Among them, anti-ambipolar devices, characterized by their unique nonlinear electrical behavior, have garnered attention as novel multifunctional components, positioning them as potential contenders for building multi-state logic devices. Utilizing the properties of few-layer As0.4P0.6 and PdSe2, we have constructed an anti-ambipolar heterojunction device. At 300 K, the device exhibits a peak voltage (Vpeak) of -3 V and a peak-to-valley ratio (PVR) close to 8 × 103, and the PVR can be modulated by bias voltage. Furthermore, by characterizing the anti-ambipolar attributes at different temperatures ranging from 80 K to 330 K, we have elucidated the thermally tunable feature of the device. At 330 K, a certain PVR (∼103) and a large Vpeak (∼-16 V) are obtained, while a PVR exceeding 108 has been achieved at 80 K. This temperature-related sensitivity empowers the device with significant potential and thermal tunability in various applications.
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Affiliation(s)
- Shengyao Chen
- MOE Key Laboratory of Weak-Light Nonlinear Photonics, TEDA Institute of Applied Physics, School of Physics, Nankai University, Tianjin 300457, China.
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology &University of Chinese Academy of Sciences, Beijing 100190, China
| | - Jiyou Jin
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology &University of Chinese Academy of Sciences, Beijing 100190, China
| | - Wenxiang Wang
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology &University of Chinese Academy of Sciences, Beijing 100190, China
| | - Shu Wang
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology &University of Chinese Academy of Sciences, Beijing 100190, China
| | - Xiaoshan Du
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology &University of Chinese Academy of Sciences, Beijing 100190, China
| | - Feng Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Lijun Ma
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology &University of Chinese Academy of Sciences, Beijing 100190, China
| | - Junqi Wang
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology &University of Chinese Academy of Sciences, Beijing 100190, China
| | - Cong Wang
- College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing 100029, China.
| | - Xinzheng Zhang
- MOE Key Laboratory of Weak-Light Nonlinear Photonics, TEDA Institute of Applied Physics, School of Physics, Nankai University, Tianjin 300457, China.
| | - Qian Liu
- MOE Key Laboratory of Weak-Light Nonlinear Photonics, TEDA Institute of Applied Physics, School of Physics, Nankai University, Tianjin 300457, China.
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology &University of Chinese Academy of Sciences, Beijing 100190, China
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2
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Yang Y, Yang S, Xia X, Hui S, Wang B, Zou B, Zhang Y, Sun J, Xin JH. MXenes for Wearable Physical Sensors toward Smart Healthcare. ACS NANO 2024. [PMID: 39186373 DOI: 10.1021/acsnano.4c08258] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/28/2024]
Abstract
The gradual rise of personal healthcare awareness is accelerating the deployment of wearable sensors, whose ability of acquiring physiological vital signs depends on sensing materials. MXenes have distinct chemical and physical superiorities over other 2D nanomaterials for wearable sensors. This review presents a comprehensive summary of the latest advancements in MXenes-based materials for wearable physical sensors. It begins with an introduction to special structural features of MXenes for sensing performance, followed by an in-depth exploration of versatile functionalities. A detailed description of different sensing mechanisms is also included to illustrate the contribution of MXenes to the sensing performance and its improvement. In addition, the real-world applications of MXenes-based physical sensors for monitoring different physiological signs are included as well. The remaining challenges of MXenes-based materials for wearable physical sensors and their promising opportunities are finally narrated, in conjunction with a prospective for future development.
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Affiliation(s)
- Yixuan Yang
- State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures, MOE Key Laboratory of New Processing Technology for Nonferrous Metals and Materials, and School of Resources, Environment and Materials, Guangxi University, Nanning 530004, P. R. China
| | - Shenglin Yang
- State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures, MOE Key Laboratory of New Processing Technology for Nonferrous Metals and Materials, and School of Resources, Environment and Materials, Guangxi University, Nanning 530004, P. R. China
| | - Xiaohu Xia
- State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures, MOE Key Laboratory of New Processing Technology for Nonferrous Metals and Materials, and School of Resources, Environment and Materials, Guangxi University, Nanning 530004, P. R. China
| | - Shigang Hui
- State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures, MOE Key Laboratory of New Processing Technology for Nonferrous Metals and Materials, and School of Resources, Environment and Materials, Guangxi University, Nanning 530004, P. R. China
| | - Ben Wang
- College of Chemistry and Environmental Engineering, Shenzhen University, Shenzhen 518055, P. R. China
| | - Bingsuo Zou
- State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures, MOE Key Laboratory of New Processing Technology for Nonferrous Metals and Materials, and School of Resources, Environment and Materials, Guangxi University, Nanning 530004, P. R. China
| | - Yabin Zhang
- State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures, MOE Key Laboratory of New Processing Technology for Nonferrous Metals and Materials, and School of Resources, Environment and Materials, Guangxi University, Nanning 530004, P. R. China
| | - Jianping Sun
- School of Resources, Environment and Materials, Guangxi University, Nanning 530004, P. R. China
| | - John H Xin
- Research Institute for Intelligent Wearable Systems School of Fashion and Textiles, The Hong Kong Polytechnic University Hung Hom, Kowloon, Hong Kong, China
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3
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Gutiérrez-Gálvez L, El Hajioui-El Ghalbzouri H, Enebral-Romero E, Garrido M, Naranjo A, López-Diego D, Luna M, Pérez EM, García-Mendiola T, Lorenzo E. Rapid and simple viral protein detection by functionalized 2D MoS 2/graphene electrochemiluminescence aptasensor. Talanta 2024; 276:126293. [PMID: 38788383 DOI: 10.1016/j.talanta.2024.126293] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/21/2024] [Revised: 05/07/2024] [Accepted: 05/19/2024] [Indexed: 05/26/2024]
Abstract
In this work we present the development of an electrochemiluminescence aptasensor based on electrografting molybdenum disulphide nanosheets functionalized with diazonium salt (MoS2-N2+) upon screen-printed electrodes of graphene (SPEs GPH) for viral proteins detection. In brief, this aptasensor consists of SPEs GPH electrografted with MoS2-N2+ and modified with a thiolated aptamer, which can specifically recognize the target protein analyte. In this case, we have used SARS-CoV-2 spike protein as model protein. Electrochemiluminescence detection was performed by using the [Ru(bpy)3]2+/TPRA (tripropylamine) system, which allows the specific detection of the SARS-CoV-2 spike protein easily and rapidly with a detection limit of 9.74 fg/mL and a linear range from 32.5 fg/mL to 50.0 pg/mL. Moreover, the applicability of the aptasensor has been confirmed by the detection of the protein directly in human saliva samples. Comparing our device with a traditional saliva antigen test, our aptasensor can detect the spike protein even when the saliva antigen test gives a negative result.
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Affiliation(s)
- Laura Gutiérrez-Gálvez
- Departamento de Química Analítica y Análisis Instrumental, Universidad Autónoma de Madrid, 28049, Madrid, Spain
| | | | - Estefanía Enebral-Romero
- Departamento de Química Analítica y Análisis Instrumental, Universidad Autónoma de Madrid, 28049, Madrid, Spain; IMDEA-Nanociencia, Ciudad Universitaria de Cantoblanco, 28049, Madrid, Spain
| | - Marina Garrido
- IMDEA-Nanociencia, Ciudad Universitaria de Cantoblanco, 28049, Madrid, Spain
| | - Alicia Naranjo
- IMDEA-Nanociencia, Ciudad Universitaria de Cantoblanco, 28049, Madrid, Spain
| | - David López-Diego
- Instituto de Micro y Nanotecnología IMN-CNM, CSIC (CEI UAM+CSIC), Isaac Newton 8, Tres Cantos, 28760, Madrid, Spain
| | - Mónica Luna
- Instituto de Micro y Nanotecnología IMN-CNM, CSIC (CEI UAM+CSIC), Isaac Newton 8, Tres Cantos, 28760, Madrid, Spain
| | - Emilio M Pérez
- IMDEA-Nanociencia, Ciudad Universitaria de Cantoblanco, 28049, Madrid, Spain
| | - Tania García-Mendiola
- Departamento de Química Analítica y Análisis Instrumental, Universidad Autónoma de Madrid, 28049, Madrid, Spain; Institute for Advanced Research in Chemical Sciences (IAdChem), Universidad Autónoma de Madrid, 28049, Madrid, Spain.
| | - Encarnación Lorenzo
- Departamento de Química Analítica y Análisis Instrumental, Universidad Autónoma de Madrid, 28049, Madrid, Spain; IMDEA-Nanociencia, Ciudad Universitaria de Cantoblanco, 28049, Madrid, Spain; Institute for Advanced Research in Chemical Sciences (IAdChem), Universidad Autónoma de Madrid, 28049, Madrid, Spain.
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4
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Sangwan VK, Chica DG, Chu TC, Cheng M, Quintero MA, Hao S, Mead CE, Choi H, Zu R, Sheoran J, He J, Liu Y, Qian E, Laing CC, Kang MA, Gopalan V, Wolverton C, Dravid VP, Lauhon LJ, Hersam MC, Kanatzidis MG. Bulk photovoltaic effect and high mobility in the polar 2D semiconductor SnP 2Se 6. SCIENCE ADVANCES 2024; 10:eado8272. [PMID: 39083609 PMCID: PMC11290483 DOI: 10.1126/sciadv.ado8272] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/22/2024] [Accepted: 06/26/2024] [Indexed: 08/02/2024]
Abstract
The growth of layered 2D compounds is a key ingredient in finding new phenomena in quantum materials, optoelectronics, and energy conversion. Here, we report SnP2Se6, a van der Waals chiral (R3 space group) semiconductor with an indirect bandgap of 1.36 to 1.41 electron volts. Exfoliated SnP2Se6 flakes are integrated into high-performance field-effect transistors with electron mobilities >100 cm2/Vs and on/off ratios >106 at room temperature. Upon excitation at a wavelength of 515.6 nanometer, SnP2Se6 phototransistors show high gain (>4 × 104) at low intensity (≈10-6 W/cm2) and fast photoresponse (< 5 microsecond) with concurrent gain of ≈52.9 at high intensity (≈56.6 mW/cm2) at a gate voltage of 60 V across 300-nm-thick SiO2 dielectric layer. The combination of high carrier mobility and the non-centrosymmetric crystal structure results in a strong intrinsic bulk photovoltaic effect; under local excitation at normal incidence at 532 nm, short circuit currents exceed 8 mA/cm2 at 20.6 W/cm2.
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Affiliation(s)
- Vinod K. Sangwan
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, USA
| | - Daniel G. Chica
- Department of Chemistry, Northwestern University, Evanston, IL 60208, USA
| | - Ting-Ching Chu
- Applied Physics Graduate Program, Northwestern University, Evanston, IL 60208, USA
| | - Matthew Cheng
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, USA
| | | | - Shiqiang Hao
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, USA
| | - Christopher E. Mead
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, USA
| | - Hyeonseon Choi
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, USA
| | - Rui Zu
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802, USA
| | - Jyoti Sheoran
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802, USA
| | - Jingyang He
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802, USA
| | - Yukun Liu
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, USA
| | - Eric Qian
- Department of Chemistry, Northwestern University, Evanston, IL 60208, USA
| | - Craig C. Laing
- Department of Chemistry, Northwestern University, Evanston, IL 60208, USA
| | - Min-A Kang
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, USA
| | - Venkatraman Gopalan
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802, USA
| | - Chris Wolverton
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, USA
| | - Vinayak P. Dravid
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, USA
| | - Lincoln J. Lauhon
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, USA
| | - Mark C. Hersam
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, USA
- Department of Chemistry, Northwestern University, Evanston, IL 60208, USA
- Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, IL 60208, USA
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5
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Lin YT, Hsu CH, Chou AS, Fong ZY, Chuu CP, Chang SJ, Hsu YW, Chou SA, Liew SL, Chiu TY, Hou FR, Ni IC, Hou DHV, Cheng CC, Radu IP, Wu CI. Antimony-Platinum Modulated Contact Enabling Majority Carrier Polarity Selection on a Monolayer Tungsten Diselenide Channel. NANO LETTERS 2024; 24:8880-8886. [PMID: 38981026 PMCID: PMC11273612 DOI: 10.1021/acs.nanolett.4c01436] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/27/2024] [Revised: 06/23/2024] [Accepted: 06/24/2024] [Indexed: 07/11/2024]
Abstract
We develop a novel metal contact approach using an antimony (Sb)-platinum (Pt) bilayer to mitigate Fermi-level pinning in 2D transition metal dichalcogenide channels. This strategy allows for control over the transport polarity in monolayer WSe2 devices. By adjustment of the Sb interfacial layer thickness from 10 to 30 nm, the effective work function of the contact/WSe2 interface can be tuned from 4.42 eV (p-type) to 4.19 eV (n-type), enabling selectable n-/p-FET operation in enhancement mode. The shift in effective work function is linked to Sb-Se bond formation and an emerging n-doping effect. This work demonstrates high-performance n- and p-FETs with a single WSe2 channel through Sb-Pt contact modulation. After oxide encapsulation, the maximum current density at |VD| = 1 V reaches 170 μA/μm for p-FET and 165 μA/μm for n-FET. This approach shows promise for cost-effective CMOS transistor applications using a single channel material and metal contact scheme.
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Affiliation(s)
- Yu-Tung Lin
- Graduate
Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 106, Taiwan
- Corporate
Research, Taiwan Semiconductor Manufacturing
Company, Hsinchu 30091, Taiwan
| | - Ching-Hao Hsu
- Graduate
Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 106, Taiwan
- Corporate
Research, Taiwan Semiconductor Manufacturing
Company, Hsinchu 30091, Taiwan
| | - Ang-Sheng Chou
- Corporate
Research, Taiwan Semiconductor Manufacturing
Company, Hsinchu 30091, Taiwan
| | - Zi-Yun Fong
- Graduate
Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 106, Taiwan
| | - Chih-Piao Chuu
- Corporate
Research, Taiwan Semiconductor Manufacturing
Company, Hsinchu 30091, Taiwan
| | - Shu-Jui Chang
- Corporate
Research, Taiwan Semiconductor Manufacturing
Company, Hsinchu 30091, Taiwan
| | - Yu-Wei Hsu
- Graduate
Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 106, Taiwan
| | - Sui-An Chou
- Corporate
Research, Taiwan Semiconductor Manufacturing
Company, Hsinchu 30091, Taiwan
| | - San Lin Liew
- Quality
& Reliability, Taiwan Semiconductor
Manufacturing Company, Hsinchu 30091, Taiwan
| | - Ting-Ying Chiu
- Graduate
Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 106, Taiwan
| | - Fa-Rong Hou
- Graduate
Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 106, Taiwan
| | - I-Chih Ni
- Graduate
Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 106, Taiwan
| | - Duen-Huei Vincent Hou
- Quality
& Reliability, Taiwan Semiconductor
Manufacturing Company, Hsinchu 30091, Taiwan
| | - Chao-Ching Cheng
- Corporate
Research, Taiwan Semiconductor Manufacturing
Company, Hsinchu 30091, Taiwan
| | - Iuliana P. Radu
- Corporate
Research, Taiwan Semiconductor Manufacturing
Company, Hsinchu 30091, Taiwan
| | - Chih-I Wu
- Graduate
Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 106, Taiwan
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6
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Driouech M, Mitra A, Cocchi C, Ramzan MS. Strain-free MoS 2/ZrGe 2N 4 van der Waals Heterostructure: Tunable Electronic Properties with Type-II Band Alignment. ACS OMEGA 2024; 9:30717-30724. [PMID: 39035918 PMCID: PMC11256293 DOI: 10.1021/acsomega.4c03193] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/03/2024] [Revised: 06/20/2024] [Accepted: 06/21/2024] [Indexed: 07/23/2024]
Abstract
Vertically stacked van der Waals heterostructures (vdW-HS) amplify the scope of 2D materials for emerging technological applications, such as nanodevices and solar cells. Here, we present a first-principles study on the formation energy and electronic properties of the heterobilayer (HBL) MoS2/ZrGe2N4, which forms a strain-free vdW-HS thanks to the identical lattice parameters of its constituents. This system has an indirect band gap with type-II band alignment, with the highest occupied and lowest unoccupied states localized on MoS2 and ZrGe2N4, respectively. Biaxial strain, which generally reduces the band gap regardless of compression or expansion, is applied to tune the electronic properties of the HBL. A small amount of tensile strain (>1%) leads to an indirect-to-direct transition, thereby shifting the band edges at the center of the Brillouin zone and leading to optical absorption in the visible region. These results suggest the potential application of HBL MoS2/ZrGe2N4 in optoelectronic devices.
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Affiliation(s)
- Mustapha Driouech
- Institut
für Physik, Carl von Ossietzky Universität, 26129 Oldenburg, Germany
| | - Amrita Mitra
- Institut
für Physik, Carl von Ossietzky Universität, 26129 Oldenburg, Germany
| | - Caterina Cocchi
- Institut
für Physik, Carl von Ossietzky Universität, 26129 Oldenburg, Germany
- Center
for Nanoscale Dynamics (CeNaD), Carl von
Ossietzky Universität, 26129 Oldenburg, Germany
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7
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Singh M, Zakria M, Pannu AS, Sonar P, Smith C, Mahasivam S, Ramanathan R, Tran K, Tawfik S, Murdoch BJ, Mayes ELH, Spencer MJS, Phillips MR, Bansal V, Ton-That C. Defect-Free, Few-Atomic-Layer Thin ZnO Nanosheets with Superior Excitonic Properties for Optoelectronic Devices. ACS NANO 2024; 18:16947-16957. [PMID: 38870404 DOI: 10.1021/acsnano.4c03098] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2024]
Abstract
Two-dimensional (2D) wide bandgap materials are gaining significant interest for next-generation optoelectronic devices. However, fabricating electronic-grade 2D nanosheets from non-van der Waals (n-vdW) oxide semiconductors poses a great challenge due to their stronger interlayer coupling compared with vdW crystals. This strong coupling typically introduces defects during exfoliation, impairing the optoelectronic properties. Herein, we report the liquid-phase exfoliation of few-atomic-layer thin, defect-free, free-standing ZnO nanosheets. These micron-sized, ultrathin ZnO structures exhibit three different orientations aligned along both the polar c-plane as well as the nonpolar a- and m-planes. The superior crystalline quality of the ZnO nanosheets is validated through comprehensive characterization techniques. This result is supported by density functional theory (DFT) calculations, which reveals that the formation of oxygen vacancies is energetically less favorable in 2D ZnO and that the c-plane loses its polarity upon exfoliation. Unlike bulk ZnO, which is typically dominated by defect-induced emission, the exfoliated nanosheets exhibit a strong, ambient-stable excitonic UV emission. We further demonstrate the utility of solution processing of ZnO nanosheets by their hybrid integration with organic components to produce stable light emitting diodes (LEDs) for display applications.
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Affiliation(s)
- Mandeep Singh
- Ian Potter NanoBioSensing Facility, NanoBiotechnology Research laboratory, School of Science, RMIT University, Melbourne, VIC 3000, Australia
| | - Muhammad Zakria
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW 2007, Australia
| | - Amandeep Singh Pannu
- School of Chemistry, Physics, and Mechanical Engineering, Queensland University of Technology, Brisbane, QLD 4000, Australia
| | - Prashant Sonar
- School of Chemistry, Physics, and Mechanical Engineering, Queensland University of Technology, Brisbane, QLD 4000, Australia
| | - Christopher Smith
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW 2007, Australia
| | - Sanje Mahasivam
- Ian Potter NanoBioSensing Facility, NanoBiotechnology Research laboratory, School of Science, RMIT University, Melbourne, VIC 3000, Australia
| | - Rajesh Ramanathan
- Ian Potter NanoBioSensing Facility, NanoBiotechnology Research laboratory, School of Science, RMIT University, Melbourne, VIC 3000, Australia
| | - Kevin Tran
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies, School of Science, RMIT University, Melbourne, VIC 3001, Australia
| | - Sherif Tawfik
- ARC Centre of Excellence in Exciton Science, School of Science, RMIT University, Melbourne, VIC 3000, Australia
| | - Billy James Murdoch
- RMIT Microscopy and Microanalysis Facility, STEM College, RMIT University, Melbourne, VIC 3001, Australia
| | | | - Michelle J S Spencer
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies, School of Science, RMIT University, Melbourne, VIC 3001, Australia
| | - Matthew R Phillips
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW 2007, Australia
| | - Vipul Bansal
- Ian Potter NanoBioSensing Facility, NanoBiotechnology Research laboratory, School of Science, RMIT University, Melbourne, VIC 3000, Australia
| | - Cuong Ton-That
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW 2007, Australia
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8
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Tian C, Sui Y, Xiao R, Feng Y, Liu J, Wang H, Zhao S, Wang S, Li P, Yu G. Doping Ability Modulated by Interlayer Coupling in AA' and AB Stacked Bilayer V-WS 2 Grown with Chemical Vapor Deposition. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2309777. [PMID: 38319032 DOI: 10.1002/smll.202309777] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/27/2023] [Revised: 01/16/2024] [Indexed: 02/07/2024]
Abstract
Doping in transition metal dichalcogenide (TMD) has received extensive attention for its prospect in the application of photoelectric devices. Currently researchers focus on the doping ability and doping distribution in monolayer TMD and have obtained a series of achievements. Bilayer TMD has more excellent properties compared with monolayer TMD. Moreover, bilayer TMD with different stacking structures presents varying performance due to the difference in interlayer coupling. Herein, this work focuses on doping ability of dopants in different bilayer stacking structures that has not been studied yet. Results of this work show that the doping ability of V atoms in bilayer AA' and AB stacked WS2 is different, and the doping concentration of V atoms in AB stacked WS2 is higher than in AA' stacked WS2. Moreover, dopants from top and bottom layer can be distinguished by scanning transmission electron microscopy (STEM) image. Density functional theory (DFT) calculation further confirms the doping rule. This study reveals the mechanism of the different doping ability caused by stacking structures in bilayer TMD and lays a foundation for further preparation of controllable-doping bilayer TMD materials.
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Affiliation(s)
- Chuang Tian
- State Key Laboratory of Integrated Circuit Materials, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yanping Sui
- State Key Laboratory of Integrated Circuit Materials, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Runhan Xiao
- State Key Laboratory of Integrated Circuit Materials, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yuhan Feng
- State Key Laboratory of Integrated Circuit Materials, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jiawen Liu
- State Key Laboratory of Integrated Circuit Materials, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Haomin Wang
- State Key Laboratory of Integrated Circuit Materials, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Sunwen Zhao
- State Key Laboratory of Integrated Circuit Materials, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Shuang Wang
- State Key Laboratory of Integrated Circuit Materials, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Pai Li
- State Key Laboratory of Integrated Circuit Materials, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Guanghui Yu
- State Key Laboratory of Integrated Circuit Materials, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
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9
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Kumar Shringi A, Kumar R, Yan F. Recent advances in bismuth oxychalcogenide nanosheets for sensing applications. NANOSCALE 2024; 16:10551-10565. [PMID: 38727604 DOI: 10.1039/d4nr00821a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2024]
Abstract
This review offers insights into the fundamental properties of bismuth oxychalcogenides Bi2O2X (X = S, Se, Te) (BOXs), concentrating on recent advancements primarily from studies published over the past five years. It examines the physical characteristics of these materials, synthesis methods, and their potential as critical components for gas sensing, biosensing, and optical sensing applications. Moreover, it underscores the implications of these advancements for the development of military, environmental, and health monitoring devices.
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Affiliation(s)
- Amit Kumar Shringi
- Department of Chemistry and Biochemistry, North Carolina Central University, Durham-27707, North Carolina, USA.
| | - Rajeev Kumar
- Department of Chemistry and Biochemistry, North Carolina Central University, Durham-27707, North Carolina, USA.
| | - Fei Yan
- Department of Chemistry and Biochemistry, North Carolina Central University, Durham-27707, North Carolina, USA.
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10
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Xiang B, Wang R, Chen Y, Wang Y, Qin T, Zhang M, Watanabe K, Taniguchi T, Duan W, Tang P, Liu H, Xiong Q. Chirality-Dependent Dynamic Evolution for Trions in Monolayer WS 2. NANO LETTERS 2024; 24:6592-6600. [PMID: 38787539 DOI: 10.1021/acs.nanolett.4c01082] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2024]
Abstract
Monolayer transition metal dichalcogenides exhibit valley-dependent excitonic characters with a large binding energy, acting as the building block for future optoelectronic functionalities. Herein, combined with pump-probe ultrafast transient transmission spectroscopy and theoretical simulations, we reveal the chirality-dependent trion dynamics in h-BN encapsulated monolayer tungsten disulfide. By resonantly pumping trions in a single valley and monitoring their temporal evolution, we identify the temperature-dependent competition between two relaxation channels driven by chirality-dependent scattering processes. At room temperature, the phonon-assisted upconversion process predominates, converting excited trions to excitons within the same valley on a sub-picosecond (ps) time scale. As temperature decreases, this process becomes less efficient, while alternative channels, notably valley depolarization process for trions, assume importance, leading to an increase of trion density in the unpumped valley within a ps time scale. Our time-resolved valley-contrast results provide a comprehensive insight into trion dynamics in 2D materials, thereby advancing the development of novel valleytronic devices.
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Affiliation(s)
- Baixu Xiang
- State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing,100084, P. R. China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, P. R. China
| | - Renqi Wang
- State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing,100084, P. R. China
| | - Yuzhong Chen
- Beijing Academy of Quantum Information Sciences, Beijing 100193, P. R. China
| | - Yubin Wang
- State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing,100084, P. R. China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, P. R. China
| | - Tingxiao Qin
- Beijing Academy of Quantum Information Sciences, Beijing 100193, P. R. China
| | - Mengdi Zhang
- Beijing Academy of Quantum Information Sciences, Beijing 100193, P. R. China
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Wenhui Duan
- State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing,100084, P. R. China
- Institute for Advanced Study, Tsinghua University, Beijing 100084, P. R. China
- Frontier Science Center for Quantum Information, Beijing, 100084, P. R. China
| | - Peizhe Tang
- School of Materials Science and Engineering, Beihang University, Beijing 100191, P. R. China
- Max Planck Institute for the Structure and Dynamics of Matter, Center for Free Electron Laser Science, 22761 Hamburg, Germany
| | - Haiyun Liu
- Beijing Academy of Quantum Information Sciences, Beijing 100193, P. R. China
| | - Qihua Xiong
- State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing,100084, P. R. China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, P. R. China
- Frontier Science Center for Quantum Information, Beijing, 100084, P. R. China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100084, P.R. China
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11
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Chung CH, Lin CY, Liu HY, Nian SE, Chen YT, Tsai CE. Impact of Rh, Ru, and Pd Leads and Contact Topologies on Performance of WSe 2 FETs: A First Comparative Ab Initio Study. MATERIALS (BASEL, SWITZERLAND) 2024; 17:2665. [PMID: 38893929 PMCID: PMC11173614 DOI: 10.3390/ma17112665] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/04/2024] [Revised: 05/10/2024] [Accepted: 05/23/2024] [Indexed: 06/21/2024]
Abstract
2D field-effect transistors (FETs) fabricated with transition metal dichalcogenide (TMD) materials are a potential replacement for the silicon-based CMOS. However, the lack of advancement in p-type contact is also a key factor hindering TMD-based CMOS applications. The less investigated path towards improving electrical characteristics based on contact geometries with low contact resistance (RC) has also been established. Moreover, finding contact metals to reduce the RC is indeed one of the significant challenges in achieving the above goal. Our research provides the first comparative analysis of the three contact configurations for a WSe2 monolayer with different noble metals (Rh, Ru, and Pd) by employing ab initio density functional theory (DFT) and non-equilibrium Green's function (NEGF) methods. From the perspective of the contact topologies, the RC and minimum subthreshold slope (SSMIN) of all the conventional edge contacts are outperformed by the novel non-van der Waals (vdW) sandwich contacts. These non-vdW sandwich contacts reveal that their RC values are below 50 Ω∙μm, attributed to the narrow Schottky barrier widths (SBWs) and low Schottky barrier heights (SBHs). Not only are the RC values dramatically reduced by such novel contacts, but the SSMIN values are lower than 68 mV/dec. The new proposal offers the lowest RC and SSMIN, irrespective of the contact metals. Further considering the metal leads, the WSe2/Rh FETs based on the non-vdW sandwich contacts show a meager RC value of 33 Ω∙μm and an exceptional SSMIN of 63 mV/dec. The two calculated results present the smallest-ever values reported in our study, indicating that the non-vdW sandwich contacts with Rh leads can attain the best-case scenario. In contrast, the symmetric convex edge contacts with Pd leads cause the worst-case degradation, yielding an RC value of 213 Ω∙μm and an SSMIN value of 95 mV/dec. While all the WSe2/Ru FETs exhibit medium performances, the minimal shift in the transfer curves is interestingly advantageous to the circuit operation. Conclusively, the low-RC performances and the desirable SSMIN values are a combination of the contact geometries and metal leads. This innovation, achieved through noble metal leads in conjunction with the novel contact configurations, paves the way for a TMD-based CMOS with ultra-low RC and rapid switching speeds.
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Affiliation(s)
| | - Chiung-Yuan Lin
- Department of Electronics and Electrical Engineering and Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan; (C.-H.C.); (H.-Y.L.); (S.-E.N.); (Y.-T.C.); (C.-E.T.)
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12
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Li X, Sun S, Wang N, Huang B, Li X. SnTe/SnSe Heterojunction Based Ammonia Sensors with Excellent Withstand to Ambient Humidities. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2309831. [PMID: 38133510 DOI: 10.1002/smll.202309831] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/27/2023] [Revised: 12/11/2023] [Indexed: 12/23/2023]
Abstract
Non-invasive breath testing has gained increasing importance for early disease screening, spurring research into cheap sensors for detecting trace biomarkers such as ammonia. However, real-life deployment of ammonia sensors remains hindered by susceptibility to humidity-induced interference. The SnTe/SnSe heterojunction-based chemiresistive-type sensor demonstrates an excellent response/recovery to different concentrations of ammonia from 0.1 to 100 ppm at room temperature. The improved sensing properties of the heterojunctions-based sensors compared to single-phased SnTe or SnSe can be attributed to the stronger NH3 adsorptions, more Te vacancies, and hydrophobic surface induced by the formed SnTe/SnSe heterojunctions. The sensing mechanisms are investigated in detail by using in situ techniques such as diffuse reflectance Fourier transform infrared spectroscopy (DRIFTS), Kelvin probe, and a.c. impedance spectroscopy together with the Density-Function-Theory calculations. The formed heterojunctions boost the overall charge transfer efficiency between the ammonia and the sensing materials, thus leading to the desirable sensing features as well, with excellent resistance to ambient humidities.
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Affiliation(s)
- Xinlei Li
- School of Microelectronics, Dalian University of Technology, Dalian, Liaoning, 116024, P. R. China
| | - Shupeng Sun
- School of Microelectronics, Dalian University of Technology, Dalian, Liaoning, 116024, P. R. China
| | - Nan Wang
- School of Microelectronics, Dalian University of Technology, Dalian, Liaoning, 116024, P. R. China
| | - Baoyu Huang
- School of Microelectronics, Dalian University of Technology, Dalian, Liaoning, 116024, P. R. China
| | - Xiaogan Li
- School of Microelectronics, Dalian University of Technology, Dalian, Liaoning, 116024, P. R. China
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13
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Guarneri L, Li Q, Bauer T, Song JH, Saunders AP, Liu F, Brongersma ML, van de Groep J. Temperature-Dependent Excitonic Light Manipulation with Atomically Thin Optical Elements. NANO LETTERS 2024; 24:6240-6246. [PMID: 38578061 PMCID: PMC11140734 DOI: 10.1021/acs.nanolett.4c00694] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/08/2024] [Revised: 04/02/2024] [Accepted: 04/03/2024] [Indexed: 04/06/2024]
Abstract
Monolayer 2D semiconductors, such as WS2, exhibit uniquely strong light-matter interactions due to exciton resonances that enable atomically thin optical elements. Similar to geometry-dependent plasmon and Mie resonances, these intrinsic material resonances offer coherent and tunable light scattering. Thus far, the impact of the excitons' temporal dynamics on the performance of such excitonic metasurfaces remains unexplored. Here, we show how the excitonic decay rates dictate the focusing efficiency of an atomically thin lens carved directly out of exfoliated monolayer WS2. By isolating the coherent exciton radiation from the incoherent background in the focus of the lens, we obtain a direct measure of the role of exciton radiation in wavefront shaping. Furthermore, we investigate the influence of exciton-phonon scattering by characterizing the focusing efficiency as a function of temperature, demonstrating an increased optical efficiency at cryogenic temperatures. Our results provide valuable insights into the role of excitonic light scattering in 2D nanophotonic devices.
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Affiliation(s)
- Ludovica Guarneri
- Van
der Waals-Zeeman Institute, Institute of Physics, University of Amsterdam, Amsterdam, 1098 XH, The Netherlands
| | - Qitong Li
- Geballe
Laboratory for Advanced Materials, Stanford
University, Stanford, California 94305, United States
| | - Thomas Bauer
- Van
der Waals-Zeeman Institute, Institute of Physics, University of Amsterdam, Amsterdam, 1098 XH, The Netherlands
| | - Jung-Hwan Song
- Geballe
Laboratory for Advanced Materials, Stanford
University, Stanford, California 94305, United States
| | - Ashley P. Saunders
- Department
of Chemistry, Stanford University, Stanford, California 94305, United States
| | - Fang Liu
- Department
of Chemistry, Stanford University, Stanford, California 94305, United States
| | - Mark L. Brongersma
- Geballe
Laboratory for Advanced Materials, Stanford
University, Stanford, California 94305, United States
| | - Jorik van de Groep
- Van
der Waals-Zeeman Institute, Institute of Physics, University of Amsterdam, Amsterdam, 1098 XH, The Netherlands
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14
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Li Z, Bretscher H, Rao A. Chemical passivation of 2D transition metal dichalcogenides: strategies, mechanisms, and prospects for optoelectronic applications. NANOSCALE 2024; 16:9728-9741. [PMID: 38700268 DOI: 10.1039/d3nr06296a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2024]
Abstract
The interest in obtaining high-quality monolayer transition metal dichalcogenides (TMDs) for optoelectronic device applications has been growing dramatically. However, the prevalence of defects and unwanted doping in these materials remain challenges, as they both limit optical properties and device performance. Surface chemical treatments of monolayer TMDs have been effective in improving their photoluminescence yield and charge transport properties. In this scenario, a systematic understanding of the underlying mechanism of chemical treatments will lead to a rational design of passivation strategies in future research, ultimately taking a step toward practical optoelectronic applications. We will therefore describe in this mini-review the strategies, progress, mechanisms, and prospects of chemical treatments to passivate and improve the optoelectronic properties of TMDs.
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Affiliation(s)
- Zhaojun Li
- Solid State Physics, Department of Materials Science and Engineering, Uppsala University, 75103 Uppsala, Sweden.
| | - Hope Bretscher
- The Max Planck Institute for the Structure and Dynamics of Matter, 22761, Hamburg, Germany
| | - Akshay Rao
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, CB3 0HE, Cambridge, UK
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15
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Bera A, Kundu B, Pal AJ. Does an intrinsic strain contribute to the effect of quantum confinement phenomenon? An alloyed transition metal dichalcogenide series, Mo(S 1-xSe x) 2 as a case study. NANOSCALE 2024; 16:9966-9974. [PMID: 38695085 DOI: 10.1039/d3nr06107h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2024]
Abstract
It is well known that the bandgap of 2D transition metal dichalcogenides (TMDs) in the quantum confinement regime increases with a decrease in the number of layers. In this work, we show the effect of lattice strain on the dependence of the gap. We have designed an ideal system in the form of common-cationic alloyed-TMDs, Mo(S1-xSex)2, for such studies. With a large difference between the ionic radii of the two chalcogens, the nanoflakes of the alloys possessed a lattice strain and have been found to yield a lower bandgap than those of both the end-members, MoS2 and MoSe2. More importantly, the dependence of the bandgap on the layer number in the nanoflakes of the alloys turned out to be steeper than in conventional binary TMDs. The experimental results imply that the lattice strain in 2D semiconductors has contributed to the effect of the quantum confinement phenomenon in addition to decreasing the bandgap, the latter being earlier predicted from a theoretical model. We have derived the electronic bandgap and the band-edge energies of the series of alloyed-TMDs in their nanoflake forms and the dependences on the number of layers from the density of states (DOS), as obtained from scanning tunneling spectroscopy (STS) recorded in a scanning tunneling microscope (STM) in an extremely localized manner.
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Affiliation(s)
- Arpan Bera
- School of Physical Sciences, Indian Association for the Cultivation of Science, Kolkata 700032, India.
| | - Biswajit Kundu
- School of Physical Sciences, Indian Association for the Cultivation of Science, Kolkata 700032, India.
| | - Amlan J Pal
- School of Physical Sciences, Indian Association for the Cultivation of Science, Kolkata 700032, India.
- UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452001, India
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16
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Martínez-Merino P, Hernández-Rodríguez MA, Piñero JC, Brites CDS, Alcántara R, Navas J. Morphology does not matter: WSe 2 luminescence nanothermometry unravelled. NANOSCALE 2024; 16:8470-8478. [PMID: 38590267 DOI: 10.1039/d4nr00014e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/10/2024]
Abstract
Transition metal dichalcogenides, including WSe2, have gained significant attention as promising nanomaterials for various applications due to their unique properties. In this study, we explore the temperature-dependent photoluminescent properties of WSe2 nanomaterials to investigate their potential as luminescent nanothermometers. We compare the performance of WSe2 quantum dots and nanorods synthesized using sonication synthesis and hot injection methods. Our results show a distinct temperature dependence of the photoluminescence, and conventional ratiometric luminescence thermometry demonstrates comparable relative thermal sensitivity (0.68-0.80% K-1) and temperature uncertainty (1.3-1.5 K), irrespective of the morphology of the nanomaterials. By applying multiple linear regression to WSe2 quantum dots, we achieve enhanced thermal sensitivity (30% K-1) and reduced temperature uncertainty (0.1 K), highlighting the potential of WSe2 as a versatile nanothermometer for microfluidics, nanofluidics, and biomedical assays.
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Affiliation(s)
- Paloma Martínez-Merino
- Departamento de Química Física, Facultad de Ciencias, Universidad de Cádiz, E-11510 Puerto Real, Cádiz, Spain.
| | - Miguel A Hernández-Rodríguez
- Departamento de Física, Universidad de La Laguna, Apdo. Correos 456, E-38200 San Cristóbal de La Laguna, Santa Cruz de Tenerife, Spain
- Phantom-g, CICECO - Aveiro Institute of Materials, Department of Physics, University of Aveiro, 3810-193 Aveiro, Portugal.
| | - José C Piñero
- Departamento de Didáctica (Área de Matemáticas), Universidad de Cádiz, E-11510 Puerto Real, Spain
| | - Carlos D S Brites
- Phantom-g, CICECO - Aveiro Institute of Materials, Department of Physics, University of Aveiro, 3810-193 Aveiro, Portugal.
| | - Rodrigo Alcántara
- Departamento de Química Física, Facultad de Ciencias, Universidad de Cádiz, E-11510 Puerto Real, Cádiz, Spain.
| | - Javier Navas
- Departamento de Química Física, Facultad de Ciencias, Universidad de Cádiz, E-11510 Puerto Real, Cádiz, Spain.
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17
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Surendran M, Singh S, Chen H, Wu C, Avishai A, Shao YT, Ravichandran J. A Hybrid Pulsed Laser Deposition Approach to Grow Thin Films of Chalcogenides. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2312620. [PMID: 38288906 DOI: 10.1002/adma.202312620] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/23/2023] [Revised: 01/24/2024] [Indexed: 02/13/2024]
Abstract
Vapor-pressure mismatched materials such as transition metal chalcogenides have emerged as electronic, photonic, and quantum materials with scientific and technological importance. However, epitaxial growth of vapor-pressure mismatched materials are challenging due to differences in the reactivity, sticking coefficient, and surface adatom mobility of the mismatched species constituting the material, especially sulfur containing compounds. Here, a novel approach is reported to grow chalcogenides-hybrid pulsed laser deposition-wherein an organosulfur precursor is used as a sulfur source in conjunction with pulsed laser deposition to regulate the stoichiometry of the deposited films. Epitaxial or textured thin films of sulfides with variety of structure and chemistry such as alkaline metal chalcogenides, main group chalcogenides, transition metal chalcogenides, and chalcogenide perovskites are demonstrated, and structural characterization reveal improvement in thin film crystallinity, and surface and interface roughness compared to the state-of-the-art. The growth method can be broadened to other vapor-pressure mismatched chalcogenides such as selenides and tellurides. This work opens up opportunities for broader epitaxial growth of chalcogenides, especially sulfide-based thin film technological applications.
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Affiliation(s)
- Mythili Surendran
- Mork Family Department of Chemical Engineering and Materials Science, and Core Center for Excellence in Nano Imaging, University of Southern California, 925 Bloom Walk, Los Angeles, CA, 90089, USA
| | - Shantanu Singh
- Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, 925 Bloom Walk, Los Angeles, CA, 90089, USA
| | - Huandong Chen
- Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, 925 Bloom Walk, Los Angeles, CA, 90089, USA
| | - Claire Wu
- Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, 925 Bloom Walk, Los Angeles, CA, 90089, USA
| | - Amir Avishai
- Core Center for Excellence in Nano Imaging, University of Southern California, 925 Bloom Walk, Los Angeles, CA, 90089, USA
| | - Yu-Tsun Shao
- Mork Family Department of Chemical Engineering and Materials Science, and Core Center for Excellence in Nano Imaging, University of Southern California, 925 Bloom Walk, Los Angeles, CA, 90089, USA
| | - Jayakanth Ravichandran
- Mork Family Department of Chemical Engineering and Materials Science, Core Center for Excellence in Nano Imaging and Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, 925 Bloom Walk, Los Angeles, CA, 90089, USA
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18
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Wani SS, Hsu CC, Kuo YZ, Darshana Kumara Kimbulapitiya KM, Chung CC, Cyu RH, Chen CT, Liu MJ, Chaudhary M, Chiu PW, Zhong YL, Chueh YL. Enhanced Electrical Transport Properties of Molybdenum Disulfide Field-Effect Transistors by Using Alkali Metal Fluorides as Dielectric Capping Layers. ACS NANO 2024; 18:10776-10787. [PMID: 38587200 PMCID: PMC11044573 DOI: 10.1021/acsnano.3c11025] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/07/2023] [Revised: 02/23/2024] [Accepted: 03/01/2024] [Indexed: 04/09/2024]
Abstract
The electronic properties of 2D materials are highly influenced by the molecular activity at their interfaces. A method was proposed to address this issue by employing passivation techniques using monolayer MoS2 field-effect transistors (FETs) while preserving high performance. Herein, we have used alkali metal fluorides as dielectric capping layers, including lithium fluoride (LiF), sodium fluoride (NaF), and potassium fluoride (KF) dielectric capping layers, to mitigate the environmental impact of oxygen and water exposure. Among them, the LiF dielectric capping layer significantly improved the transistor performance, specifically in terms of enhanced field effect mobility from 74 to 137 cm2/V·s, increased current density from 17 μA/μm to 32.13 μA/μm at a drain voltage of Vd of 1 V, and decreased subthreshold swing to 0.8 V/dec The results have been analytically verified by X-ray photoelectron spectroscopy (XPS) and Raman, and photoluminescence (PL) spectroscopy, and the demonstrated technique can be extended to other transition metal dichalcogenide (TMD)-based FETs, which can become a prospect for cutting-edge electronic applications. These findings highlight certain important trade-offs and provide insight into the significance of interface control and passivation material choice on the electrical stability, performance, and enhancement of the MoS2 FET.
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Affiliation(s)
- Sumayah-Shakil Wani
- Department
of Materials Science and Engineering, National
Tsing-Hua University, Hsinchu, 30013, Taiwan
- College
of Semiconductor Research, National Tsing-Hua
University, Hsinchu, 30013, Taiwan
- Department
of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
| | - Chen Chieh Hsu
- Department
of Physics and Quantum Information Center, Chung Yuan Christian University, Taoyuan, 32034, Taiwan
| | - Yao-Zen Kuo
- Department
of Materials Science and Engineering, National
Tsing-Hua University, Hsinchu, 30013, Taiwan
- College
of Semiconductor Research, National Tsing-Hua
University, Hsinchu, 30013, Taiwan
- Department
of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
| | - Kimbulapitiya Mudiyanselage
Madhusanka Darshana Kumara Kimbulapitiya
- Department
of Materials Science and Engineering, National
Tsing-Hua University, Hsinchu, 30013, Taiwan
- College
of Semiconductor Research, National Tsing-Hua
University, Hsinchu, 30013, Taiwan
- Department
of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
| | - Chia-Chen Chung
- Department
of Materials Science and Engineering, National
Tsing-Hua University, Hsinchu, 30013, Taiwan
- College
of Semiconductor Research, National Tsing-Hua
University, Hsinchu, 30013, Taiwan
- Department
of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
| | - Ruei-Hong Cyu
- Department
of Materials Science and Engineering, National
Tsing-Hua University, Hsinchu, 30013, Taiwan
- College
of Semiconductor Research, National Tsing-Hua
University, Hsinchu, 30013, Taiwan
- Department
of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
| | - Chieh-Ting Chen
- Department
of Materials Science and Engineering, National
Tsing-Hua University, Hsinchu, 30013, Taiwan
- College
of Semiconductor Research, National Tsing-Hua
University, Hsinchu, 30013, Taiwan
- Department
of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
| | - Ming-Jin Liu
- Department
of Materials Science and Engineering, National
Tsing-Hua University, Hsinchu, 30013, Taiwan
- College
of Semiconductor Research, National Tsing-Hua
University, Hsinchu, 30013, Taiwan
- Department
of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
| | - Mayur Chaudhary
- Department
of Materials Science and Engineering, National
Tsing-Hua University, Hsinchu, 30013, Taiwan
- College
of Semiconductor Research, National Tsing-Hua
University, Hsinchu, 30013, Taiwan
- Department
of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
| | - Po-Wen Chiu
- College
of Semiconductor Research, National Tsing-Hua
University, Hsinchu, 30013, Taiwan
- Institute
of Electronics Engineering, National Tsing
Hua University, Hsinchu, 30013, Taiwan
| | - Yuan-Liang Zhong
- Department
of Physics and Quantum Information Center, Chung Yuan Christian University, Taoyuan, 32034, Taiwan
| | - Yu-Lun Chueh
- Department
of Materials Science and Engineering, National
Tsing-Hua University, Hsinchu, 30013, Taiwan
- College
of Semiconductor Research, National Tsing-Hua
University, Hsinchu, 30013, Taiwan
- Department
of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan
- Department
of Materials Science and Engineering, Korea
University, Seoul 02841, Republic of Korea
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19
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Rostami H, Cilento F, Cappelluti E. Pump-Driven Opto-Magnetic Properties in Semiconducting Transition-Metal Dichalcogenides: An Analytical Model. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:707. [PMID: 38668201 PMCID: PMC11053629 DOI: 10.3390/nano14080707] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/11/2024] [Revised: 04/15/2024] [Accepted: 04/16/2024] [Indexed: 04/29/2024]
Abstract
Single-layer transition-metal dichalcogenides provide an unique intrinsic entanglement between the spin/valley/orbital degrees of freedom and the polarization of scattered photons. This scenario gives rise to the well-assessed optical dichroism observed by using both steady and time-resolved probes. In this paper, we provide compact analytical modeling of the onset of a finite Faraday/Kerr optical rotation upon shining with circularly polarized light. We identify different optical features displaying optical rotation at different characteristic energies, and we describe in an analytical framework the time-dependence of their intensities as a consequence of the main spin-conserving and spin-flip processes.
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Affiliation(s)
- Habib Rostami
- Department of Physics, University of Bath, Claverton Down, Bath BA2 7AY, UK;
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20
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Meganathan K, Mangamma G, Swaminadhan MJ, Murugan V, Shinde NB, Ghosh S, Eswaran SK. Thickness-Dependent Nanoscale Elastic Stiffening of Chemical Vapor Deposited Atomically Thin 2H-MoS 2 Films. J Phys Chem Lett 2024; 15:4206-4211. [PMID: 38598716 DOI: 10.1021/acs.jpclett.3c03512] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/12/2024]
Abstract
Understanding the nanoscale elastic-size-effects of atomically thin transition-metal dichalcogenides (TMDs) as a function of thickness underpins the avenue of flexible 2D electronics. In this work, we employed the atomic force acoustic microscopy (AFAM) technique to investigate the thickness-dependent elastic properties of CVD grown 2H-MoS2 films. The monolayer MoS2 exhibited a Young's modulus of 273 ± 27 GPa. Our systematic analysis from bulk to monolayer suggests that the 2H-MoS2 phase exhibits nanoscale elastic-stiffening behavior with decreasing number of layers (thickness). The Young's modulus increased by a factor of ∼2.7 for monolayer MoS2 when compared with the bulk. First-principle DFT calculations affirm the nanoscale elastic-stiffening behavior of MoS2 with decreasing number of layers. Our findings suggest that the observed elastic stiffening is due to the interlayer sliding, which may be facilitated by defects in MoS2 layers. The observed elastic stiffening may be of potential importance for understanding TMD based nanomechanical devices.
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Affiliation(s)
- Kalaiarasan Meganathan
- 2D Materials and Devices Laboratory (2DML), Sir C. V. Raman Research Park, Department of Physics and Nanotechnology, SRM Institute of Science and Technology (SRMIST), Kattankulathur 603203, Chennai, India
| | - G Mangamma
- Surface and Nanoscience Division, Indira Gandhi Centre for Atomic Research (IGCAR), Kalpakkam 603102, Tamil Nadu, India
| | - M J Swaminadhan
- Materials Design Lab, Department of Physics and Nanotechnology, SRM Institute of Science and Technology (SRMIST), Kattankulathur 603203, Chennai, India
| | - Vijaykumar Murugan
- 2D Materials and Devices Laboratory (2DML), Sir C. V. Raman Research Park, Department of Physics and Nanotechnology, SRM Institute of Science and Technology (SRMIST), Kattankulathur 603203, Chennai, India
| | - Nitin Babu Shinde
- 2D Materials and Devices Laboratory (2DML), Sir C. V. Raman Research Park, Department of Physics and Nanotechnology, SRM Institute of Science and Technology (SRMIST), Kattankulathur 603203, Chennai, India
| | - Saurabh Ghosh
- Materials Design Lab, Department of Physics and Nanotechnology, SRM Institute of Science and Technology (SRMIST), Kattankulathur 603203, Chennai, India
| | - Senthil Kumar Eswaran
- 2D Materials and Devices Laboratory (2DML), Sir C. V. Raman Research Park, Department of Physics and Nanotechnology, SRM Institute of Science and Technology (SRMIST), Kattankulathur 603203, Chennai, India
- Nanotechnology Research Centre (NRC), SRM Institute of Science and Technology (SRMIST), Kattankulathur 603203, Chennai, India
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21
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Xu K, Zou Z, Li W, Zhang L, Ge M, Wang T, Du W. Strong Linearly Polarized Light Emission by Coupling Out-of-Plane Exciton to Anisotropic Gap Plasmon Nanocavity. NANO LETTERS 2024; 24:3647-3653. [PMID: 38488282 DOI: 10.1021/acs.nanolett.3c04899] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/28/2024]
Abstract
With exceptional quantum confinement, 2D monolayer semiconductors support a strong excitonic effect, making them an ideal platform for exploring light-matter interactions and as building blocks for novel optoelectronic devices. Different from the well-known in-plane excitons in transition metal dichalcogenides (TMD), the out-of-plane excitons in indium selenide (InSe) usually show weak emission, which limits their applications as light sources. Here, by embedding InSe in an anisotropic gap plasmon nanocavity, we have realized plasmon-enhanced linearly polarized photoluminescence with an anisotropic ratio up to ∼140, corresponding to degree of polarization (DoP) of ∼98.6%. Such polarization selectivity, originating from the polarization-dependent plasmonic enhancement supported by the "nanowire-on-mirror" nanocavity, can be well tuned by the InSe thickness. Moreover, we have also realized an InSe-based light-emitting diode with polarized electroluminescence. Our research highlights the role of excitonic dipole orientation in designing nanophotonic devices and paves the way for developing InSe-based optoelectronic devices with polarization control.
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Affiliation(s)
- Kai Xu
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, Jiangsu, P. R. China
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, Jiangsu, P. R. China
| | - Zhen Zou
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, Jiangsu, P. R. China
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, Jiangsu, P. R. China
| | - Wenfei Li
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, Jiangsu, P. R. China
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, Jiangsu, P. R. China
| | - Lan Zhang
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, Jiangsu, P. R. China
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, Jiangsu, P. R. China
| | - Maowen Ge
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, Jiangsu, P. R. China
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, Jiangsu, P. R. China
| | - Tao Wang
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, Jiangsu, P. R. China
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, Jiangsu, P. R. China
| | - Wei Du
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, Jiangsu, P. R. China
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, Jiangsu, P. R. China
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22
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Wasem Klein F, Huntzinger JR, Astié V, Voiry D, Parret R, Makhlouf H, Juillaguet S, Decams JM, Contreras S, Landois P, Zahab AA, Sauvajol JL, Paillet M. Determining by Raman spectroscopy the average thickness and N-layer-specific surface coverages of MoS 2 thin films with domains much smaller than the laser spot size. BEILSTEIN JOURNAL OF NANOTECHNOLOGY 2024; 15:279-296. [PMID: 38476324 PMCID: PMC10928926 DOI: 10.3762/bjnano.15.26] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/13/2023] [Accepted: 02/20/2024] [Indexed: 03/14/2024]
Abstract
Raman spectroscopy is a widely used technique to characterize nanomaterials because of its convenience, non-destructiveness, and sensitivity to materials change. The primary purpose of this work is to determine via Raman spectroscopy the average thickness of MoS2 thin films synthesized by direct liquid injection pulsed-pressure chemical vapor deposition (DLI-PP-CVD). Such samples are constituted of nanoflakes (with a lateral size of typically 50 nm, i.e., well below the laser spot size), with possibly a distribution of thicknesses and twist angles between stacked layers. As an essential preliminary, we first reassess the applicability of different Raman criteria to determine the thicknesses (or layer number, N) of MoS2 flakes from measurements performed on reference samples, namely well-characterized mechanically exfoliated or standard chemical vapor deposition MoS2 large flakes deposited on 90 ± 6 nm SiO2 on Si substrates. Then, we discuss the applicability of the same criteria for significantly different DLI-PP-CVD MoS2 samples with average thicknesses ranging from sub-monolayer up to three layers. Finally, an original procedure based on the measurement of the intensity of the layer breathing modes is proposed to evaluate the surface coverage for each N (i.e., the ratio between the surface covered by exactly N layers and the total surface) in DLI-PP-CVD MoS2 samples.
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Affiliation(s)
- Felipe Wasem Klein
- Laboratoire Charles Coulomb, Université de Montpellier, CNRS, F-34095, Montpellier, France
| | - Jean-Roch Huntzinger
- Laboratoire Charles Coulomb, Université de Montpellier, CNRS, F-34095, Montpellier, France
| | - Vincent Astié
- Annealsys, 139 Rue des Walkyries, 34000 Montpellier, France
| | - Damien Voiry
- Institut Européen des Membranes, IEM, UMR 5635, Université Montpellier, ENSCM, CNRS, Montpellier, France
| | - Romain Parret
- Aix Marseille Université, CNRS, CINAM, UMR 7325, Campus de Luminy, 13288, Marseille, France
| | - Houssine Makhlouf
- Laboratoire Charles Coulomb, Université de Montpellier, CNRS, F-34095, Montpellier, France
| | - Sandrine Juillaguet
- Laboratoire Charles Coulomb, Université de Montpellier, CNRS, F-34095, Montpellier, France
| | | | - Sylvie Contreras
- Laboratoire Charles Coulomb, Université de Montpellier, CNRS, F-34095, Montpellier, France
| | - Périne Landois
- Laboratoire Charles Coulomb, Université de Montpellier, CNRS, F-34095, Montpellier, France
| | - Ahmed-Azmi Zahab
- Laboratoire Charles Coulomb, Université de Montpellier, CNRS, F-34095, Montpellier, France
| | - Jean-Louis Sauvajol
- Laboratoire Charles Coulomb, Université de Montpellier, CNRS, F-34095, Montpellier, France
| | - Matthieu Paillet
- Laboratoire Charles Coulomb, Université de Montpellier, CNRS, F-34095, Montpellier, France
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Raghunathan M, Kapoor A, Mohammad A, Kumar P, Singh R, Tripathi SC, Muzammil K, Pal DB. Advances in two-dimensional transition metal dichalcogenides-based sensors for environmental, food, and biomedical analysis: A review. LUMINESCENCE 2024; 39:e4703. [PMID: 38433325 DOI: 10.1002/bio.4703] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/02/2023] [Revised: 01/10/2024] [Accepted: 02/06/2024] [Indexed: 03/05/2024]
Abstract
Transition metal dichalcogenides (TMDCs) are versatile two-dimensional (2D) nanomaterials used in biosensing applications due to their excellent physical and chemical properties. Due to biomaterial target properties, biosensors' most significant challenge is improving their sensitivity and stability. In environmental analysis, TMDCs have demonstrated exceptional pollutant detection and removal capabilities. Their high surface area, tunable electronic properties, and chemical reactivity make them ideal for sensors and adsorbents targeting various contaminants, including heavy metals, organic pollutants, and emerging contaminants. Furthermore, their unique electronic and optical properties enable sensitive detection techniques, enhancing our ability to monitor and mitigate environmental pollution. In the food analysis, TMDCs-based nanomaterials have shown remarkable potential in ensuring food safety and quality. These nanomaterials exhibit high specificity and sensitivity for detecting contaminants, pathogens, and adulterants in various food matrices. Their integration into sensor platforms enables rapid and on-site analysis, reducing the reliance on centralized laboratories and facilitating timely interventions in the food supply chain. In biomedical studies, TMDCs-based nanomaterials have demonstrated significant strides in diagnostic and therapeutic applications. Their biocompatibility, surface functionalization versatility, and photothermal properties have paved the way for novel disease detection, drug delivery, and targeted therapy approaches. Moreover, TMDCs-based nanomaterials have shown promise in imaging modalities, providing enhanced contrast and resolution for various medical imaging techniques. This article provides a comprehensive overview of 2D TMDCs-based biosensors, emphasizing the growing demand for advanced sensing technologies in environmental, food, and biomedical analysis.
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Affiliation(s)
- Muthukumar Raghunathan
- Department of Biotechnology, School of Bioengineering, SRM Institute of Science and Technology, Kattankulathur, Chennai, Tamil Nadu, India
| | - Ashish Kapoor
- Department of Chemical Engineering, Harcourt Butler Technical University, Kanpur, Uttar Pradesh, India
| | - Akbar Mohammad
- School of Chemical Engineering, Yeungnam University, Gyeongsan, Gyeongsangbuk-do, Republic of Korea
| | - Praveen Kumar
- Department of Biotechnology, School of Bioengineering, SRM Institute of Science and Technology, Kattankulathur, Chennai, Tamil Nadu, India
| | - Rajeev Singh
- Department of Chemical Environmental Science, Jamia Millia Islamia, New Delhi, India
| | - Subhash C Tripathi
- Institute of Applied Sciences & Humanities, Department of Chemistry, GLA University, Mathura, Uttar Pradesh, India
| | - Khursheed Muzammil
- Department of Public Health, College of Applied Medical Sciences, Khamis Mushait Campus, King Khalid University, Abha, Saudi Arabia
| | - Dan Bahadur Pal
- Department of Chemical Engineering, Harcourt Butler Technical University, Kanpur, Uttar Pradesh, India
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24
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Rai AK, Shah AA, Kumar J, Chattaraj S, Dar AB, Patbhaje U, Shrivastava M. MoS 2 Field-Effect Transistor Performance Enhancement by Contact Doping and Defect Passivation via Fluorine Ions and Its Cyclic Field-Assisted Activation. ACS NANO 2024; 18:6215-6228. [PMID: 38345911 DOI: 10.1021/acsnano.3c09428] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/15/2024]
Abstract
MoS2-based field-effect transistors (FETs) and, in general, transition metal dichalcogenide channels are fundamentally limited by high contact resistance (RC) and intrinsic defects, which results in low drive current and lower carrier mobilities, respectively. This work addresses these issues using a technique based on CF4 plasma treatment in the contacts and further cyclic field-assisted drift and activation of the fluorine ions (F-), which get introduced into the contact region during the CF4 plasma treatment. The F- ions are activated using cyclic pulses applied across the source-drain (S/D) contacts, which leads to their migration to the contact edges via the channel. Further, using ab initio molecular dynamics and density functional theory simulations, these F- ions are found to bond at sulfur (S) vacancies, resulting in their passivation and n-type doping in the channel and near the S/D contacts. An increase in doping results in the narrowing of the Schottky barrier width and a reduction in RC by ∼90%. Additionally, the passivation of S vacancies in the channel enhances the mobility of the FET by ∼150%. The CF4 plasma treatment in contacts and further cyclic field-assisted activation of F- ions resulted in an ON-current (ION) improvement by ∼90% and ∼480% for exfoliated and CVD-grown MoS2, respectively. Moreover, this improvement in ION has been achieved without any deterioration in the ION/IOFF, which was found to be >7-8 orders.
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Affiliation(s)
- Anand Kumar Rai
- Department of Electronic Systems Engineering, Indian Institute of Science, Bangalore 560012, India
| | - Asif A Shah
- Department of Electronic Systems Engineering, Indian Institute of Science, Bangalore 560012, India
| | - Jeevesh Kumar
- Department of Electronic Systems Engineering, Indian Institute of Science, Bangalore 560012, India
| | - Sumana Chattaraj
- Department of Electronic Systems Engineering, Indian Institute of Science, Bangalore 560012, India
| | - Aadil Bashir Dar
- Department of Electronic Systems Engineering, Indian Institute of Science, Bangalore 560012, India
| | - Utpreksh Patbhaje
- Department of Electronic Systems Engineering, Indian Institute of Science, Bangalore 560012, India
| | - Mayank Shrivastava
- Department of Electronic Systems Engineering, Indian Institute of Science, Bangalore 560012, India
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25
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Hossen MF, Shendokar S, Aravamudhan S. Defects and Defect Engineering of Two-Dimensional Transition Metal Dichalcogenide (2D TMDC) Materials. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:410. [PMID: 38470741 DOI: 10.3390/nano14050410] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/31/2023] [Revised: 02/04/2024] [Accepted: 02/18/2024] [Indexed: 03/14/2024]
Abstract
As layered materials, transition metal dichalcogenides (TMDCs) are promising two-dimensional (2D) materials. Interestingly, the characteristics of these materials are transformed from bulk to monolayer. The atomically thin TMDC materials can be a good alternative to group III-V and graphene because of their emerging tunable electrical, optical, and magnetic properties. Although 2D monolayers from natural TMDC materials exhibit the purest form, they have intrinsic defects that limit their application. However, the synthesis of TMDC materials using the existing fabrication tools and techniques is also not immune to defects. Additionally, it is difficult to synthesize wafer-scale TMDC materials for a multitude of factors influencing grain growth mechanisms. While defect engineering techniques may reduce the percentage of defects, the available methods have constraints for healing defects at the desired level. Thus, this holistic review of 2D TMDC materials encapsulates the fundamental structure of TMDC materials, including different types of defects, named zero-dimensional (0D), one-dimensional (1D), and two-dimensional (2D). Moreover, the existing defect engineering methods that relate to both formation of and reduction in defects have been discussed. Finally, an attempt has been made to correlate the impact of defects and the properties of these TMDC materials.
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Affiliation(s)
- Moha Feroz Hossen
- Joint School of Nanoscience and Nanoengineering, 2907 E Gate City Blvd, Greensboro, NC 27401, USA
- Department of Nanoengineering, North Carolina Agricultural and Technical State University, Greensboro, NC 27411, USA
| | - Sachin Shendokar
- Joint School of Nanoscience and Nanoengineering, 2907 E Gate City Blvd, Greensboro, NC 27401, USA
- Department of Nanoengineering, North Carolina Agricultural and Technical State University, Greensboro, NC 27411, USA
| | - Shyam Aravamudhan
- Joint School of Nanoscience and Nanoengineering, 2907 E Gate City Blvd, Greensboro, NC 27401, USA
- Department of Nanoengineering, North Carolina Agricultural and Technical State University, Greensboro, NC 27411, USA
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26
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Zhang W, Ma Z, Wang J, Shao B, Zuo X. Tunability of electronic properties in the 2D MoS 2/α-tellurene/WS 2 heterotrilayer via biaxial strain and electric field. Phys Chem Chem Phys 2024; 26:6362-6371. [PMID: 38315005 DOI: 10.1039/d3cp06002k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2024]
Abstract
Alpha-tellurene (α-Te), a two-dimensional (2D) material that has been theoretically predicted and experimentally verified, has garnered significant attention due to its unique properties. In this study, we investigated the 2D trilayer MoS2/α-Te/WS2 van der Waals heterostructure with different stacking orders using first-principles calculations. Our results indicate that this heterotrilayer exhibits an intrinsic type-I band alignment and an indirect band gap similar to that of monolayer α-Te. Notably, the band edges of the heterostructure can be modulated by biaxial strain and an external electric field, enabling these edges to arise from different monolayers. This controlled manipulation facilitates the effective separation of photogenerated electron-hole pairs and prolongs the carrier lifetime. Moreover, the heterostructure can undergo a transition from an indirect to a direct band gap under biaxial compressive strain or a moderate negative electric field, and semiconductor-to-metal transition can also be achieved by intensifying the biaxial strain and external electric field. Overall, our research provides valuable theoretical insights into the potential applications of α-Te-based heterostructures, rendering them promising candidates for the next generation of nanodevices.
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Affiliation(s)
- Wenli Zhang
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300350, China.
| | - Zhuang Ma
- School of Physics and Telecommunication Engineering, Zhoukou Normal University, Zhoukou 466001, China
| | - Jing Wang
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300350, China.
| | - Bin Shao
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300350, China.
- Tianjin Key Laboratory of Optoelectronic Sensor and Sensing Network Technology, Nankai University, Tianjin 300350, China
| | - Xu Zuo
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300350, China.
- Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Tianjin 300350, China
- Engineering Research Center of Thin Film Optoelectronics Technology, Ministry of Education, Tianjin 300350, China
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27
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De Palma AC, Peng X, Arash S, Gao FY, Baldini E, Li X, Yu ET. Elucidating Piezoelectricity and Strain in Monolayer MoS 2 at the Nanoscale Using Kelvin Probe Force Microscopy. NANO LETTERS 2024; 24:1835-1842. [PMID: 38315833 DOI: 10.1021/acs.nanolett.3c03100] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/07/2024]
Abstract
Strain engineering modifies the optical and electronic properties of atomically thin transition metal dichalcogenides. Highly inhomogeneous strain distributions in two-dimensional materials can be easily realized, enabling control of properties on the nanoscale; however, methods for probing strain on the nanoscale remain challenging. In this work, we characterize inhomogeneously strained monolayer MoS2 via Kelvin probe force microscopy and electrostatic gating, isolating the contributions of strain from other electrostatic effects and enabling the measurement of all components of the two-dimensional strain tensor on length scales less than 100 nm. The combination of these methods is used to calculate the spatial distribution of the electrostatic potential resulting from piezoelectricity, presenting a powerful way to characterize inhomogeneous strain and piezoelectricity that can be extended toward a variety of 2D materials.
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Affiliation(s)
- Alex C De Palma
- Materials Science and Engineering Program, Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712, United States
| | - Xinyue Peng
- Department of Physics and Center for Complex Quantum Systems, University of Texas at Austin, Austin, Texas 78712, United States
| | - Saba Arash
- Department of Physics and Center for Complex Quantum Systems, University of Texas at Austin, Austin, Texas 78712, United States
| | - Frank Y Gao
- Department of Physics and Center for Complex Quantum Systems, University of Texas at Austin, Austin, Texas 78712, United States
| | - Edoardo Baldini
- Department of Physics and Center for Complex Quantum Systems, University of Texas at Austin, Austin, Texas 78712, United States
| | - Xiaoqin Li
- Department of Physics and Center for Complex Quantum Systems, University of Texas at Austin, Austin, Texas 78712, United States
| | - Edward T Yu
- Materials Science and Engineering Program, Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712, United States
- Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas at Austin, Austin, Texas 78758, United States
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28
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Morabito F, Synnatschke K, Mehew JD, Varghese S, Sayers CJ, Folpini G, Petrozza A, Cerullo G, Tielrooij KJ, Coleman J, Nicolosi V, Gadermaier C. Long lived photogenerated charge carriers in few-layer transition metal dichalcogenides obtained from liquid phase exfoliation. NANOSCALE ADVANCES 2024; 6:1074-1083. [PMID: 38356640 PMCID: PMC10863726 DOI: 10.1039/d3na00862b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/07/2023] [Accepted: 11/26/2023] [Indexed: 02/16/2024]
Abstract
Semiconducting transition metal dichalcogenides are important optoelectronic materials thanks to their intense light-matter interaction and wide selection of fabrication techniques, with potential applications in light harvesting and sensing. Crucially, these applications depend on the lifetimes and recombination dynamics of photogenerated charge carriers, which have primarily been studied in monolayers obtained from labour-intensive mechanical exfoliation or costly chemical vapour deposition. On the other hand, liquid phase exfoliation presents a high throughput and cost-effective method to produce dispersions of mono- and few-layer nanosheets. This approach allows for easy scalability and enables the subsequent processing and formation of macroscopic films directly from the liquid phase. Here, we use transient absorption spectroscopy and spatiotemporally resolved pump-probe microscopy to study the charge carrier dynamics in tiled nanosheet films of MoS2 and WS2 deposited from the liquid phase using an adaptation of the Langmuir-Schaefer technique. We find an efficient photogeneration of charge carriers with lifetimes of several nanoseconds, which we ascribe to stabilisation at nanosheet edges. These findings provide scope for photocatalytic and photodetector applications, where long-lived charge carriers are crucial, and suggest design strategies for photovoltaic devices.
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Affiliation(s)
- Floriana Morabito
- Area Science Park Basovizza S.S. 14 Km 163.5 34149 Trieste Italy
- Dipartimento di Fisica, Politecnico di Milano Piazza L. da Vinci 32 20133 Milano Italy
- Center for Nano Science and Technology @PoliMi, Istituto Italiano di Tecnologia Via Rubattino 81 20134 Milan Italy
- CNR-IOM, Consiglio Nazionale delle Ricerche Istituto Officina dei Materiali Trieste Italy
| | - Kevin Synnatschke
- School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin Dublin D02 Ireland
| | - Jake Dudley Mehew
- Catalan Institute of Nanoscience and Nanotechnology ICN2 UAB Campus Bellaterra (Barcelona) 08193 Spain
| | - Sebin Varghese
- Catalan Institute of Nanoscience and Nanotechnology ICN2 UAB Campus Bellaterra (Barcelona) 08193 Spain
| | - Charles James Sayers
- Dipartimento di Fisica, Politecnico di Milano Piazza L. da Vinci 32 20133 Milano Italy
| | - Giulia Folpini
- Center for Nano Science and Technology @PoliMi, Istituto Italiano di Tecnologia Via Rubattino 81 20134 Milan Italy
| | - Annamaria Petrozza
- Center for Nano Science and Technology @PoliMi, Istituto Italiano di Tecnologia Via Rubattino 81 20134 Milan Italy
| | - Giulio Cerullo
- Dipartimento di Fisica, Politecnico di Milano Piazza L. da Vinci 32 20133 Milano Italy
| | - Klaas-Jan Tielrooij
- Catalan Institute of Nanoscience and Nanotechnology ICN2 UAB Campus Bellaterra (Barcelona) 08193 Spain
- TU Eindhoven, Department of Applied Physics Den Dolech 2 5612 AZ Eindhoven The Netherlands
| | - Jonathan Coleman
- School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin Dublin D02 Ireland
| | - Valeria Nicolosi
- School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin Dublin D02 Ireland
| | - Christoph Gadermaier
- Dipartimento di Fisica, Politecnico di Milano Piazza L. da Vinci 32 20133 Milano Italy
- Center for Nano Science and Technology @PoliMi, Istituto Italiano di Tecnologia Via Rubattino 81 20134 Milan Italy
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29
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Chung CH, Chen TY, Lin CY, Chien HW. Ultrashort channel MoSe 2transistors with selenium atoms replaced at the interface: first-principles quantum-transport study. NANOTECHNOLOGY 2024; 35:175709. [PMID: 38176068 DOI: 10.1088/1361-6528/ad1afa] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/23/2023] [Accepted: 01/04/2024] [Indexed: 01/06/2024]
Abstract
Realizing n- and p-type transition metal dichalcogenide (TMD)-based field-effect transistors for nanoscale complementary metal oxide semiconductor (CMOS) applications remains challenging owing to undesirable contact resistance. Quantumtransport calculations were performed by replacing single-sided Se atoms of TMD near the interface with As or Br atoms to further improve the contact resistance. Here, partial selenium replacement produced a novel interface with a segment of metamaterial MoSeX (Pt/MoSeX/MoSe2; X = As, Br). Such stable metamaterials exhibit semi-metallicity, and the contact resistance can be thus lowered. Our findings provide insights into the potential of MoSe2-based nano-CMOS logic devices.
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Affiliation(s)
- Chih-Hung Chung
- Department of Electronics and Electrical Engineering and Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan
| | - Ting-Yu Chen
- Department of Electronics and Electrical Engineering and Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan
| | - Chiung-Yuan Lin
- Department of Electronics and Electrical Engineering and Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan
| | - Huang-Wei Chien
- Department of Electronics and Electrical Engineering and Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan
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30
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Yang DH, Chu YS, Okello OFN, Seo SY, Moon G, Kim KH, Jo MH, Shin D, Mizoguchi T, Yang S, Choi SY. Full automation of point defect detection in transition metal dichalcogenides through a dual mode deep learning algorithm. MATERIALS HORIZONS 2024; 11:747-757. [PMID: 37990857 DOI: 10.1039/d3mh01500a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/23/2023]
Abstract
Point defects often appear in two-dimensional (2D) materials and are mostly correlated with physical phenomena. The direct visualisation of point defects, followed by statistical inspection, is the most promising way to harness structure-modulated 2D materials. Here, we introduce a deep learning-based platform to identify the point defects in 2H-MoTe2: synergy of unit cell detection and defect classification. These processes demonstrate that segmenting the detected hexagonal cell into two unit cells elaborately cropped the unit cells: further separating a unit cell input into the Te2/Mo column part remarkably increased the defect classification accuracies. The concentrations of identified point defects were 7.16 × 1020 cm2 of Te monovacancies, 4.38 × 1019 cm2 of Te divacancies and 1.46 × 1019 cm2 of Mo monovacancies generated during an exfoliation process for TEM sample-preparation. These revealed defects correspond to the n-type character mainly originating from Te monovacancies, statistically. Our deep learning-oriented platform combined with atomic structural imaging provides the most intuitive and precise way to analyse point defects and, consequently, insight into the defect-property correlation based on deep learning in 2D materials.
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Affiliation(s)
- Dong-Hwan Yang
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-Ro, Pohang 37673, Republic of Korea.
- Center for van der Waals Quantum Solids, Institute of Basic Science (IBS), 77 Cheongam-Ro, Pohang 37673, Republic of Korea
| | - Yu-Seong Chu
- Division of Biomedical Engineering, College of Health Sciences, Yonsei University, 1, Yeonsedae-gil, Heungeop-myeon, Wonju-si, Gangwon-do, 26493, Republic of Korea
| | - Odongo Francis Ngome Okello
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-Ro, Pohang 37673, Republic of Korea.
| | - Seung-Young Seo
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-Ro, Pohang 37673, Republic of Korea.
| | - Gunho Moon
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-Ro, Pohang 37673, Republic of Korea.
- Center for van der Waals Quantum Solids, Institute of Basic Science (IBS), 77 Cheongam-Ro, Pohang 37673, Republic of Korea
| | - Kwang Ho Kim
- Department of Materials Science and Engineering, Pusan National University (PNU), 2, Busandaehak-ro 63beon-gil, Geumjeong-gu, 46241, Busan, Republic of Korea
| | - Moon-Ho Jo
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-Ro, Pohang 37673, Republic of Korea.
- Center for van der Waals Quantum Solids, Institute of Basic Science (IBS), 77 Cheongam-Ro, Pohang 37673, Republic of Korea
| | - Dongwon Shin
- Materials Science and Technology Division, Oak Ridge National Laboratory (ORNL), Oak Ridge, TN 37831, USA
| | - Teruyasu Mizoguchi
- Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 15308505, Japan
| | - Sejung Yang
- Department of Precision Medicine, Yonsei University Wonju College of Medicine, 20, Ilsan-ro, Wonju-si, Gangwon-do, Republic of Korea.
| | - Si-Young Choi
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-Ro, Pohang 37673, Republic of Korea.
- Center for van der Waals Quantum Solids, Institute of Basic Science (IBS), 77 Cheongam-Ro, Pohang 37673, Republic of Korea
- Department of Semiconductor Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-Ro, Pohang, 37673, Republic of Korea
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31
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Ra HS, Lee SH, Jeong SJ, Cho S, Lee JS. Advances in Heterostructures for Optoelectronic Devices: Materials, Properties, Conduction Mechanisms, Device Applications. SMALL METHODS 2024; 8:e2300245. [PMID: 37330655 DOI: 10.1002/smtd.202300245] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/25/2023] [Revised: 04/20/2023] [Indexed: 06/19/2023]
Abstract
Atomically thin 2D transition metal dichalcogenides (TMDs) have recently been spotlighted for next-generation electronic and photoelectric device applications. TMD materials with high carrier mobility have superior electronic properties different from bulk semiconductor materials. 0D quantum dots (QDs) possess the ability to tune their bandgap by composition, diameter, and morphology, which allows for a control of their light absorbance and emission wavelength. However, QDs exhibit a low charge carrier mobility and the presence of surface trap states, making it difficult to apply them to electronic and optoelectronic devices. Accordingly, 0D/2D hybrid structures are considered as functional materials with complementary advantages that may not be realized with a single component. Such advantages allow them to be used as both transport and active layers in next-generation optoelectronic applications such as photodetectors, image sensors, solar cells, and light-emitting diodes. Here, recent discoveries related to multicomponent hybrid materials are highlighted. Research trends in electronic and optoelectronic devices based on hybrid heterogeneous materials are also introduced and the issues to be solved from the perspective of the materials and devices are discussed.
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Affiliation(s)
- Hyun-Soo Ra
- Department of Energy Science and Engineering and Energy Science and Engineering Research Center, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu, 42988, Republic of Korea
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, 08860, Barcelona, Spain
| | - Sang-Hyeon Lee
- Department of Energy Science and Engineering and Energy Science and Engineering Research Center, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu, 42988, Republic of Korea
| | - Seock-Jin Jeong
- Department of Energy Science and Engineering and Energy Science and Engineering Research Center, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu, 42988, Republic of Korea
| | - Sinyoung Cho
- Department of Energy Science and Engineering and Energy Science and Engineering Research Center, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu, 42988, Republic of Korea
| | - Jong-Soo Lee
- Department of Energy Science and Engineering and Energy Science and Engineering Research Center, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu, 42988, Republic of Korea
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32
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Li G, Zakharov DN, Sikder S, Xu Y, Tong X, Dimitrakellis P, Boscoboinik JA. In Situ Monitoring of Non-Thermal Plasma Cleaning of Surfactant Encapsulated Nanoparticles. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:290. [PMID: 38334560 PMCID: PMC10856489 DOI: 10.3390/nano14030290] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/28/2023] [Revised: 01/24/2024] [Accepted: 01/26/2024] [Indexed: 02/10/2024]
Abstract
Surfactants are widely used in the synthesis of nanoparticles, as they have a remarkable ability to direct their growth to obtain well-defined shapes and sizes. However, their post-synthesis removal is a challenge, and the methods used often result in morphological changes that defeat the purpose of the initial controlled growth. Moreover, after the removal of surfactants, the highly active surfaces of nanomaterials may undergo structural reconstruction by exposure to a different environment. Thus, ex situ characterization after air exposure may not reflect the effect of the cleaning methods. Here, combining X-ray photoelectron spectroscopy, in situ infrared reflection absorption spectroscopy, and environmental transmission electron microscopy measurements with CO probe experiments, we investigated different surfactant-removal methods to produce clean metallic Pt nanoparticles from surfactant-encapsulated ones. It was demonstrated that both ultraviolet-ozone (UV-ozone) treatment and room temperature O2 plasma treatment led to the formation of Pt oxides on the surface after the removal of the surfactant. On the other hand, when H2 was used for plasma treatment, both the Pt0 oxidation state and nanoparticle size distribution were preserved. In addition, H2 plasma treatment can reduce Pt oxides after O2-based treatments, resulting in metallic nanoparticles with clean surfaces. These findings provide a better understanding of the various options for surfactant removal from metal nanoparticles and point toward non-thermal plasmas as the best route if the integrity of the nanoparticle needs to be preserved.
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Affiliation(s)
- Gengnan Li
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY 11973, USA; (D.N.Z.); (S.S.); (Y.X.); (X.T.)
| | - Dmitri N. Zakharov
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY 11973, USA; (D.N.Z.); (S.S.); (Y.X.); (X.T.)
| | - Sayantani Sikder
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY 11973, USA; (D.N.Z.); (S.S.); (Y.X.); (X.T.)
- Department of Materials Science and Chemical Engineering, Stony Brook University, Stony Brook, NY 11790, USA
| | - Yixin Xu
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY 11973, USA; (D.N.Z.); (S.S.); (Y.X.); (X.T.)
- Department of Materials Science and Chemical Engineering, Stony Brook University, Stony Brook, NY 11790, USA
| | - Xiao Tong
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY 11973, USA; (D.N.Z.); (S.S.); (Y.X.); (X.T.)
| | - Panagiotis Dimitrakellis
- Catalysis Center for Energy Innovation, Department of Chemical and Biomolecular Engineering, University of Delaware, Newark, DE 19716, USA;
| | - Jorge Anibal Boscoboinik
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY 11973, USA; (D.N.Z.); (S.S.); (Y.X.); (X.T.)
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33
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Americo S, Pakdel S, Thygesen KS. Enhancing Metallicity and Basal Plane Reactivity of 2D Materials via Self-Intercalation. ACS NANO 2024. [PMID: 38290223 DOI: 10.1021/acsnano.3c08117] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/01/2024]
Abstract
Intercalation (ic) of metal atoms into the van der Waals (vdW) gap of layered materials constitutes a facile strategy to create materials whose properties can be tuned via the concentration of the intercalated atoms. Here we perform systematic density functional theory calculations to explore various properties of an emergent class of crystalline 2D materials (ic-2D materials) comprising vdW homobilayers with native metal atoms on a sublattice of intercalation sites. From an initial set of 1348 ic-2D materials, generated from 77 vdW homobilayers, we find 95 structures with good thermodynamic stability (formation energy within 200 meV/atom of the convex hull). A significant fraction of the semiconducting host materials are found to undergo an insulator to metal transition upon self-intercalation, with only PdS2, PdSe2, and GeS2 maintaining a finite electronic gap. In five cases, self-intercalation introduces magnetism. In general, self-intercalation is found to promote metallicity and enhance the chemical reactivity on the basal plane. Based on the calculated H binding energy, we find that self-intercalated SnS2 and Hf3Te2 are promising candidates for hydrogen evolution catalysis. All the stable ic-2D structures and their calculated properties can be explored in the open C2DB database.
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Affiliation(s)
- Stefano Americo
- Computational Atomic-scale Materials Design (CAMD), Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - Sahar Pakdel
- Computational Atomic-scale Materials Design (CAMD), Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - Kristian Sommer Thygesen
- Computational Atomic-scale Materials Design (CAMD), Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
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34
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Nakamoto T, Matsuyama K, Sakai M, Chen CT, Cheuch YL, Mouri S, Yoshimura T, Fujimura N, Kiriya D. Selective Isolation of Mono- to Quadlayered 2D Materials via Sonication-Assisted Micromechanical Exfoliation. ACS NANO 2024; 18:2455-2463. [PMID: 38196098 DOI: 10.1021/acsnano.3c11099] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/11/2024]
Abstract
Mechanical exfoliation methods of two-dimensional materials have been an essential process for advanced devices and fundamental sciences. However, the exfoliation method usually generates various thick flakes, and a bunch of thick bulk flakes usually covers an entire substrate. Here, we developed a method to selectively isolate mono- to quadlayers of transition metal dichalcogenides (TMDCs) by sonication in organic solvents. The analysis reveals the importance of low interface energies between solvents and TMDCs, leading to the effective removal of bulk flakes under sonication. Importantly, a monolayer adjacent to bulk flakes shows cleavage at the interface, and the monolayer can be selectively isolated on the substrate. This approach can extend to preparing a monolayer device with crowded 17 electrode fingers surrounding the monolayer and for the measurement of electrostatic device performance.
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Affiliation(s)
- Tatsuya Nakamoto
- Department of Physics and Electronics, Osaka Metropolitan University, 1-1 Gakuen-cho, Naka-ku, Sakai-shi, Osaka 599-8531, Japan
- Department of Basic Science, Graduate School of Arts and Sciences, The University of Tokyo, 3-8-1 Komaba, Meguro-ku, Tokyo 153-8902, Japan
| | - Keigo Matsuyama
- Department of Physics and Electronics, Osaka Metropolitan University, 1-1 Gakuen-cho, Naka-ku, Sakai-shi, Osaka 599-8531, Japan
- Department of Basic Science, Graduate School of Arts and Sciences, The University of Tokyo, 3-8-1 Komaba, Meguro-ku, Tokyo 153-8902, Japan
| | - Masahiro Sakai
- Department of Basic Science, Graduate School of Arts and Sciences, The University of Tokyo, 3-8-1 Komaba, Meguro-ku, Tokyo 153-8902, Japan
| | - Chieh-Ting Chen
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Yu-Lun Cheuch
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Shinichiro Mouri
- College of Science and Engineering, Ritsumeikan University, Nojihigashi 1-1-1, Kusatsu, Shiga 525-8577, Japan
| | - Takeshi Yoshimura
- Department of Physics and Electronics, Osaka Metropolitan University, 1-1 Gakuen-cho, Naka-ku, Sakai-shi, Osaka 599-8531, Japan
| | - Norifumi Fujimura
- Department of Physics and Electronics, Osaka Metropolitan University, 1-1 Gakuen-cho, Naka-ku, Sakai-shi, Osaka 599-8531, Japan
| | - Daisuke Kiriya
- Department of Physics and Electronics, Osaka Metropolitan University, 1-1 Gakuen-cho, Naka-ku, Sakai-shi, Osaka 599-8531, Japan
- Department of Basic Science, Graduate School of Arts and Sciences, The University of Tokyo, 3-8-1 Komaba, Meguro-ku, Tokyo 153-8902, Japan
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35
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Xu C, Barden N, Alexeev EM, Wang X, Long R, Cadore AR, Paradisanos I, Ott AK, Soavi G, Tongay S, Cerullo G, Ferrari AC, Prezhdo OV, Loh ZH. Ultrafast Charge Transfer and Recombination Dynamics in Monolayer-Multilayer WSe 2 Junctions Revealed by Time-Resolved Photoemission Electron Microscopy. ACS NANO 2024; 18:1931-1947. [PMID: 38197410 DOI: 10.1021/acsnano.3c06473] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/11/2024]
Abstract
The ultrafast carrier dynamics of junctions between two chemically identical, but electronically distinct, transition metal dichalcogenides (TMDs) remains largely unknown. Here, we employ time-resolved photoemission electron microscopy (TR-PEEM) to probe the ultrafast carrier dynamics of a monolayer-to-multilayer (1L-ML) WSe2 junction. The TR-PEEM signals recorded for the individual components of the junction reveal the sub-ps carrier cooling dynamics of 1L- and 7L-WSe2, as well as few-ps exciton-exciton annihilation occurring on 1L-WSe2. We observe ultrafast interfacial hole (h) transfer from 1L- to 7L-WSe2 on an ∼0.2 ps time scale. The resultant excess h density in 7L-WSe2 decays by carrier recombination across the junction interface on an ∼100 ps time scale. Reminiscent of the behavior at a depletion region, the TR-PEEM image reveals the h density accumulation on the 7L-WSe2 interface, with a decay length ∼0.60 ± 0.17 μm. These charge transfer and recombination dynamics are in agreement with ab initio quantum dynamics. The computed orbital densities reveal that charge transfer occurs from the basal plane, which extends over both 1L and ML regions, to the upper plane localized on the ML region. This mode of charge transfer is distinctive to chemically homogeneous junctions of layered materials and constitutes an additional carrier deactivation pathway that should be considered in studies of 1L-TMDs found alongside their ML, a common occurrence in exfoliated samples.
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Affiliation(s)
- Ce Xu
- School of Chemistry, Chemical Engineering and Biotechnology, and School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - Natalie Barden
- School of Chemistry, Chemical Engineering and Biotechnology, and School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - Evgeny M Alexeev
- Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, U.K
| | - Xiaoli Wang
- College of Chemistry, Key Laboratory of Theoretical and Computational Photochemistry, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Run Long
- College of Chemistry, Key Laboratory of Theoretical and Computational Photochemistry, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Alisson R Cadore
- Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, U.K
| | | | - Anna K Ott
- Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, U.K
| | - Giancarlo Soavi
- Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, U.K
- Institute of Solid State Physics, Friedrich Schiller University Jena, Max-Wien-Platz 1, 07743 Jena, Germany
| | - Sefaattin Tongay
- School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Giulio Cerullo
- Department of Physics, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano, Italy
- IFN-CNR, Piazza Leonardo da Vinci 32, I-20133 Milano, Italy
| | - Andrea C Ferrari
- Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, U.K
| | - Oleg V Prezhdo
- Department of Chemistry, University of Southern California, Los Angeles, California 90089, United States
| | - Zhi-Heng Loh
- School of Chemistry, Chemical Engineering and Biotechnology, and School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
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36
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Luo Y, Gu Z, Liao W, Huang Y, Perez-Aguilar JM, Luo Y, Chen L. Villin headpiece unfolding upon binding to boridene mediated by the "anchoring-perturbation" mechanism. iScience 2024; 27:108577. [PMID: 38170080 PMCID: PMC10758975 DOI: 10.1016/j.isci.2023.108577] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/01/2023] [Revised: 10/16/2023] [Accepted: 11/22/2023] [Indexed: 01/05/2024] Open
Abstract
We employ molecular dynamics (MD) simulations to investigate the influence of boridene on the behavior of a protein model, HP35, with the aim of assessing the potential biotoxicity of boridene. Our MD results reveal that HP35 can undergo unfolding via an "anchoring-perturbation" mechanism upon adsorption onto the boridene surface. Specifically, the third helix of HP35 becomes tightly anchored to the boridene surface through strong electrostatic interactions between the abundant molybdenum atoms on the boridene surface and the oxygen atoms on the HP35 backbone. Meanwhile, the first helix, experiencing continuous perturbation from the surrounding water solution over an extended period, suffers from potential breakage of hydrogen bonds, ultimately resulting in its unfolding. Our findings not only propose, for the first time to our knowledge, the "anchoring-perturbation" mechanism as a guiding principle for protein unfolding but also reveal the potential toxicity of boridene on protein structures.
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Affiliation(s)
- Yuqi Luo
- Department of Gastrointestinal and Hepatobiliary Surgery, Shenzhen Longhua District Central Hospital, No. 187, Guanlan Road, Longhua District, Shenzhen, Guangdong Province 518110, China
| | - Zonglin Gu
- College of Physical Science and Technology, Yangzhou University, Jiangsu 225009, China
| | - Weihua Liao
- Department of Radiology, Guangzhou Nansha District Maternal and Child Health Hospital, No. 103, Haibang Road, Nansha District, Guangzhou, Guangdong Province 511457, China
| | - Yiwen Huang
- Department of Emergency, Nansha Hospital, Guangzhou First People’s Hospital, Guangzhou, Guangdong, China
| | - Jose Manuel Perez-Aguilar
- School of Chemical Sciences, Meritorious Autonomous University of Puebla (BUAP), University City, Puebla 72570, Mexico
| | - Yanbo Luo
- Department of Gastrointestinal and Hepatobiliary Surgery, Shenzhen Longhua District Central Hospital, No. 187, Guanlan Road, Longhua District, Shenzhen, Guangdong Province 518110, China
| | - Longzhen Chen
- Department of Gastrointestinal and Hepatobiliary Surgery, Shenzhen Longhua District Central Hospital, No. 187, Guanlan Road, Longhua District, Shenzhen, Guangdong Province 518110, China
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37
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Park J, Leem JW, Park M, Kim JO, Ku Z, Chegal W, Kang SW, Kim YL. Heteronanostructured Field-Effect Transistors for Enhancing Entropy and Parameter Space in Electrical Unclonable Primitives. ACS NANO 2024; 18:1041-1053. [PMID: 38117976 PMCID: PMC10786166 DOI: 10.1021/acsnano.3c10308] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/20/2023] [Revised: 12/08/2023] [Accepted: 12/14/2023] [Indexed: 12/22/2023]
Abstract
Hardware security is not a new problem but is ever-growing in consumer and medical domains owing to hyperconnectivity. A physical unclonable function (PUF) offers a promising hardware security solution for cryptographic key generation, identification, and authentication. However, electrical PUFs using nanomaterials or two-dimensional (2D) transition metal dichalcogenides (TMDCs) often have limited entropy and parameter space sources, both of which increase the vulnerability to attacks and act as bottlenecks for practical applications. We report an electrical PUF with enhanced entropy as well as parameter space by incorporating 2D TMDC heteronanostructures into field-effect transistors (FETs). Lateral heteronanostructures of 2D molybdenum disulfide and tungsten disulfide serve as a potent entropy source. The variable feature of FETs is further leveraged to enhance the parameter space that provides multiple challenge-response pairs, which are essential for PUFs. This combination results in stably repeatable yet highly variable FET characteristics as alternative electrical PUFs. Comprehensive PUF performance analyses validate the bit uniformity, reproducibility, uniqueness, randomness, false rates, and encoding capacity. The 2D material heteronanostructure-driven electrical PUFs with strong FET-to-FET variability can potentially be augmented as an immediately deployable and scalable security solution for various hardware devices.
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Affiliation(s)
- Jaeseo Park
- Advanced
Instrumentation Institute, Korea Research
Institute of Standard & Science, Daejeon 34113, Republic of Korea
- Precision
Measurement, University of Science and Technology, Daejeon 34113, Republic of Korea
| | - Jung Woo Leem
- Weldon
School of Biomedical Engineering, Purdue
University, West Lafayette, Indiana 47907, United States
| | - Minji Park
- Advanced
Instrumentation Institute, Korea Research
Institute of Standard & Science, Daejeon 34113, Republic of Korea
| | - Jun Oh Kim
- Advanced
Instrumentation Institute, Korea Research
Institute of Standard & Science, Daejeon 34113, Republic of Korea
| | - Zahyun Ku
- Materials
and Manufacturing Directorate, Air Force
Research Laboratory, Wright-Patterson
AFB, Ohio 45433, United States
| | - Won Chegal
- Advanced
Instrumentation Institute, Korea Research
Institute of Standard & Science, Daejeon 34113, Republic of Korea
| | - Sang-Woo Kang
- Advanced
Instrumentation Institute, Korea Research
Institute of Standard & Science, Daejeon 34113, Republic of Korea
- Precision
Measurement, University of Science and Technology, Daejeon 34113, Republic of Korea
| | - Young L. Kim
- Weldon
School of Biomedical Engineering, Purdue
University, West Lafayette, Indiana 47907, United States
- Purdue
Quantum Science and Engineering Institute, Purdue University, West Lafayette, Indiana 47907, United States
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38
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Panasci SE, Deretzis I, Schilirò E, La Magna A, Roccaforte F, Koos A, Nemeth M, Pécz B, Cannas M, Agnello S, Giannazzo F. Interface Properties of MoS 2 van der Waals Heterojunctions with GaN. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:133. [PMID: 38251098 PMCID: PMC10818867 DOI: 10.3390/nano14020133] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/28/2023] [Revised: 12/27/2023] [Accepted: 01/03/2024] [Indexed: 01/23/2024]
Abstract
The combination of the unique physical properties of molybdenum disulfide (MoS2) with those of gallium nitride (GaN) and related group-III nitride semiconductors have recently attracted increasing scientific interest for the realization of innovative electronic and optoelectronic devices. A deep understanding of MoS2/GaN interface properties represents the key to properly tailor the electronic and optical behavior of devices based on this heterostructure. In this study, monolayer (1L) MoS2 was grown on GaN-on-sapphire substrates by chemical vapor deposition (CVD) at 700 °C. The structural, chemical, vibrational, and light emission properties of the MoS2/GaN heterostructure were investigated in detail by the combination of microscopic/spectroscopic techniques and ab initio calculations. XPS analyses on as-grown samples showed the formation of stoichiometric MoS2. According to micro-Raman spectroscopy, monolayer MoS2 domains on GaN exhibit an average n-type doping of (0.11 ± 0.12) × 1013 cm-2 and a small tensile strain (ε ≈ 0.25%), whereas an intense light emission at 1.87 eV was revealed by PL analyses. Furthermore, a gap at the interface was shown by cross-sectional TEM analysis, confirming the van der Waals (vdW) bond between MoS2 and GaN. Finally, density functional theory (DFT) calculations of the heterostructure were carried out, considering three different configurations of the interface, i.e., (i) an ideal Ga-terminated GaN surface, (ii) the passivation of Ga surface by a monolayer of oxygen (O), and (iii) the presence of an ultrathin Ga2O3 layer. This latter model predicts the formation of a vdW interface and a strong n-type doping of MoS2, in closer agreement with the experimental observations.
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Affiliation(s)
- Salvatore Ethan Panasci
- National Research Council-Institute for Microelectronics and Microsystems (CNR-IMM), Z.I. Strada VIII 5, 95121 Catania, Italy; (I.D.); (E.S.); (A.L.M.); (F.R.); (S.A.); (F.G.)
| | - Ioannis Deretzis
- National Research Council-Institute for Microelectronics and Microsystems (CNR-IMM), Z.I. Strada VIII 5, 95121 Catania, Italy; (I.D.); (E.S.); (A.L.M.); (F.R.); (S.A.); (F.G.)
| | - Emanuela Schilirò
- National Research Council-Institute for Microelectronics and Microsystems (CNR-IMM), Z.I. Strada VIII 5, 95121 Catania, Italy; (I.D.); (E.S.); (A.L.M.); (F.R.); (S.A.); (F.G.)
| | - Antonino La Magna
- National Research Council-Institute for Microelectronics and Microsystems (CNR-IMM), Z.I. Strada VIII 5, 95121 Catania, Italy; (I.D.); (E.S.); (A.L.M.); (F.R.); (S.A.); (F.G.)
| | - Fabrizio Roccaforte
- National Research Council-Institute for Microelectronics and Microsystems (CNR-IMM), Z.I. Strada VIII 5, 95121 Catania, Italy; (I.D.); (E.S.); (A.L.M.); (F.R.); (S.A.); (F.G.)
| | - Antal Koos
- HUN-REN Centre for Energy Research, Institute of Technical Physics and Materials Science, Konkoly-Thege ut 29-33, 1121 Budapest, Hungary; (A.K.); (M.N.)
| | - Miklos Nemeth
- HUN-REN Centre for Energy Research, Institute of Technical Physics and Materials Science, Konkoly-Thege ut 29-33, 1121 Budapest, Hungary; (A.K.); (M.N.)
| | - Béla Pécz
- HUN-REN Centre for Energy Research, Institute of Technical Physics and Materials Science, Konkoly-Thege ut 29-33, 1121 Budapest, Hungary; (A.K.); (M.N.)
| | - Marco Cannas
- Department of Physics and Chemistry Emilio Segrè, University of Palermo, Via Archirafi 36, 90123 Palermo, Italy;
| | - Simonpietro Agnello
- National Research Council-Institute for Microelectronics and Microsystems (CNR-IMM), Z.I. Strada VIII 5, 95121 Catania, Italy; (I.D.); (E.S.); (A.L.M.); (F.R.); (S.A.); (F.G.)
- Department of Physics and Chemistry Emilio Segrè, University of Palermo, Via Archirafi 36, 90123 Palermo, Italy;
- ATEN Center, University of Palermo, Viale delle Scienze Ed. 18, 90128 Palermo, Italy
| | - Filippo Giannazzo
- National Research Council-Institute for Microelectronics and Microsystems (CNR-IMM), Z.I. Strada VIII 5, 95121 Catania, Italy; (I.D.); (E.S.); (A.L.M.); (F.R.); (S.A.); (F.G.)
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Feria DN, Huang QZ, Yeh CS, Lin SX, Lin DY, Tseng BC, Lian JT, Lin TY. Facile synthesis of β-Ga 2O 3based high-performance electronic devices via direct oxidation of solution-processed transition metal dichalcogenides. NANOTECHNOLOGY 2024; 35:125603. [PMID: 38064741 DOI: 10.1088/1361-6528/ad13bf] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/10/2023] [Accepted: 12/08/2023] [Indexed: 01/05/2024]
Abstract
Gallium oxide (Ga2O3) is a promising wide bandgap semiconductor that is viewed as a contender for the next generation of high-power electronics due to its high theoretical breakdown electric field and large Baliga's figure of merit. Here, we report a facile route of synthesizingβ-Ga2O3via direct oxidation conversion using solution-processed two-dimensional (2D) GaS semiconducting nanomaterial. Higher order of crystallinity in x-ray diffraction patterns and full surface coverage formation in scanning electron microscopy images after annealing were achieved. A direct and wide bandgap of 5 eV was calculated, and the synthesizedβ-Ga2O3was fabricated as thin film transistors (TFT). Theβ-Ga2O3TFT fabricated exhibits remarkable electron mobility (1.28 cm2Vs-1) and a good current ratio (Ion/Ioff) of 2.06 × 105. To further boost the electrical performance and solve the structural imperfections resulting from the exfoliation process of the 2D nanoflakes, we also introduced and doped graphene inβ-Ga2O3TFT devices, increasing the electrical device mobility by ∼8-fold and thereby promoting percolation pathways for the charge transport. We found that electron mobility and conductivity increase directly with the graphene doping concentration. From these results, it can be proved that theβ-Ga2O3networks have excellent carrier transport properties. The facile and convenient synthesis method successfully developed in this paper makes an outstanding contribution to applying 2D oxide materials in different and emerging optoelectronic applications.
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Affiliation(s)
- Denice Navat Feria
- Department of Optoelectronics and Materials Technology, National Taiwan Ocean University, Keelung, 202301, Taiwan
| | - Qi-Zhi Huang
- Department of Optoelectronics and Materials Technology, National Taiwan Ocean University, Keelung, 202301, Taiwan
| | - Chun-Shao Yeh
- Department of Optoelectronics and Materials Technology, National Taiwan Ocean University, Keelung, 202301, Taiwan
| | - Shi-Xian Lin
- Department of Optoelectronics and Materials Technology, National Taiwan Ocean University, Keelung, 202301, Taiwan
| | - Der-Yuh Lin
- Department of Electronic Engineering, National Changhua University of Education, Changhua, 500207, Taiwan
| | - Bo-Chang Tseng
- Graduate Institute of Photonics, National Changhua University of Education, Changhua, 500207, Taiwan
| | - Jan-Tian Lian
- Department of Optoelectronics and Materials Technology, National Taiwan Ocean University, Keelung, 202301, Taiwan
| | - Tai-Yuan Lin
- Department of Optoelectronics and Materials Technology, National Taiwan Ocean University, Keelung, 202301, Taiwan
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40
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Nag R, Saha R, Layek RK, Bera A. Atomically thin MXene/WSe 2Schottky heterojunction towards enhanced photogenerated charge carrier. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:135703. [PMID: 38113646 DOI: 10.1088/1361-648x/ad172e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/07/2023] [Accepted: 12/19/2023] [Indexed: 12/21/2023]
Abstract
Two-dimensional materials garner increasing interest in next-generation electronics and optoelectronic devices due to their atomic-thin nature and distinctive physical properties. Building on these advances, we present the successful synthesis of a heterostructure composed of the semi-metallic Ti3C2-MXene and the semiconducting WSe2, in which the atomic layers are vertically aligned. The wet impregnation method effectively synthesizes an atomically thin Ti3C2-MXene/WSe2heterostructure characterized by atomic force microscopy, Raman and time-resolved photoluminescence (TRPL) analysis. In addition, the current-voltage characteristics at the heterostructure reveal the Schottky junction probed by the scanning tunnelling microscopy and the conductive atomic force microscopy tip. The Schottky heterojunction also exhibits enhanced photocatalytic properties by improving the photogenerated charge carriers and inhibiting recombination. This work demonstrates the unique 2D-2D Ti3C2-MXene/WSe2vertical heterojunction possesses superior photon trapping ability and can efficiently transport photogenerated charge carriers to the reaction sites to enhance photocatalysis performance.
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Affiliation(s)
- Riya Nag
- Department of Physics, Midnapore College (Autonomous), Raja Bazar Main Rd, 721101 Midnapore, India
| | - Raima Saha
- Department of Physics, Midnapore College (Autonomous), Raja Bazar Main Rd, 721101 Midnapore, India
| | - Rama Kanta Layek
- School of Engineering Science, Department of Separation Science, LUT University, FI-15210 Lahti, Finland
| | - Abhijit Bera
- Department of Physics, Midnapore College (Autonomous), Raja Bazar Main Rd, 721101 Midnapore, India
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41
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Liao L, Kovalska E, Regner J, Song Q, Sofer Z. Two-Dimensional Van Der Waals Thin Film and Device. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2303638. [PMID: 37731156 DOI: 10.1002/smll.202303638] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/30/2023] [Revised: 08/07/2023] [Indexed: 09/22/2023]
Abstract
In the rapidly evolving field of thin-film electronics, the emergence of large-area flexible and wearable devices has been a significant milestone. Although organic semiconductor thin films, which can be manufactured through solution processing, have been identified, their utility is often undermined by their poor stability and low carrier mobility under ambient conditions. However, inorganic nanomaterials can be solution-processed and demonstrate outstanding intrinsic properties and structural stability. In particular, a series of two-dimensional (2D) nanosheet/nanoparticle materials have been shown to form stable colloids in their respective solvents. However, the integration of these 2D nanomaterials into continuous large-area thin with precise control of layer thickness and lattice orientation still remains a significant challenge. This review paper undertakes a detailed analysis of van der Waals thin films, derived from 2D materials, in the advancement of thin-film electronics and optoelectronic devices. The superior intrinsic properties and structural stability of inorganic nanomaterials are highlighted, which can be solution-processed and underscor the importance of solution-based processing, establishing it as a cornerstone strategy for scalable electronic and optoelectronic applications. A comprehensive exploration of the challenges and opportunities associated with the utilization of 2D materials for the next generation of thin-film electronics and optoelectronic devices is presented.
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Affiliation(s)
- Liping Liao
- Department of Inorganic Chemistry, University of Chemistry and Technology, Technicka 5, Prague, 166 28, Czech Republic
| | - Evgeniya Kovalska
- Faculty of Environment, Science and Economy, Department of Engineering, Exeter, EX4 4QF, UK
| | - Jakub Regner
- Department of Inorganic Chemistry, University of Chemistry and Technology, Technicka 5, Prague, 166 28, Czech Republic
| | - Qunliang Song
- School of Materials and Energy, Southwest University, Chongqing, 400715, P. R. China
| | - Zdeněk Sofer
- Department of Inorganic Chemistry, University of Chemistry and Technology, Technicka 5, Prague, 166 28, Czech Republic
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42
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Pu M, Guo W, Guo Y. Non-Noble Metal Incorporated Transition Metal Dichalcogenide Monolayers for Electrochemical CO 2 Reduction: A First-Principles Study. ACS APPLIED MATERIALS & INTERFACES 2023; 15:58388-58396. [PMID: 38051634 DOI: 10.1021/acsami.3c13240] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
Using non-noble metal atoms as catalysts is attractive for decreasing the cost of the CO2 reduction reaction (CO2RR). By screening first-row transition metals and noble metals through extensive first-principles calculations, non-noble Sc and Ti single atoms binding on vacancy-defected transition metal dichalcogenide (TMD) monolayers exhibit better catalytic performance and selectivity for electrochemical CO2RR than noble metal single atoms. The overpotentials of Sc and Ti atoms for the CO2RR can be reduced lower than 0.09 V after applying suitable biaxial tensile strains on vacancy-defected TMDs, which are approximately 1 order of magnitude lower than that of most reported metal atom catalysts. The vacancy defects of TMDs and charge transfer to metal atoms induced by tensile strain play a key role in improving the catalytic activity of non-noble metal single atoms. These results highlight a possible way to design new single atom catalysts for electrochemical CO2RR by utilizing the combination of non-noble metal atoms, defected TMDs, and strain engineering.
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Affiliation(s)
- Mingjie Pu
- State Key Laboratory of Mechanics and Control for Aerospace Structures, MOE Key Laboratory for Intelligent Nano Materials and Devices, College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
| | - Wanlin Guo
- State Key Laboratory of Mechanics and Control for Aerospace Structures, MOE Key Laboratory for Intelligent Nano Materials and Devices, College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
| | - Yufeng Guo
- State Key Laboratory of Mechanics and Control for Aerospace Structures, MOE Key Laboratory for Intelligent Nano Materials and Devices, College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
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43
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Tan X, Li Q, Ren D, Fu HH. The device performance limit of in-plane monolayer VTe 2/WTe 2 heterojunction-based field-effect transistors. NANOSCALE 2023. [PMID: 38047474 DOI: 10.1039/d3nr03974a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/05/2023]
Abstract
To overcome the scaling restriction on silicon-based field-effect transistors (FETs), two-dimensional (2D) transition metal dichalcogenides (TMDs) have been strongly proposed as alternative materials. To explore the device performance limit of TMD-based FETs, in this work, the ab initio quantum transport approach is utilized to study the transport properties of monolayer VTe2/WTe2 heterojunction-based FETs possessing double gates (DGs) with a 5 nm gate length (Lg). Our theoretical simulations demonstrate that the DG-cold-source VTe2/WTe2 FETs with a 5 nm Lg and 2 or 3 nm proper underlap (UL) meet the basic requirements of the on-state current (Ion), power dissipation (PDP), and delay time (τ) for the 2028 needs of the International Technology Roadmap for Semiconductor (ITRS) 2013, which ensures their high-performance and low-power-dissipation device applications. Moreover, the DG-cold-source VTe2/WTe2-based FETs with a 3 nm Lg and 2 or 3 nm UL meet the high-performance requirements of Ion, τ, and PDP for the 2028 needs of ITRS 2013. Additionally, by further considering the negative capacitance technology in devices, the parameters τ, Ion, and PDP of the VTe2/WTe2-based FETs with a 1 nm Lg and 3 nm UL meet well with the 2028 needs for ITRS 2013 towards high-performance device applications. Our theoretical results uncover that the 2D DG-cold-source VTe2/WTe2 FETs can be used as a new kind of promising material candidate to drive the scaling of Moore's law down to 1 nm.
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Affiliation(s)
- Xingyi Tan
- Department of Physics, Chongqing Three Gorges University, Wanzhou, 404100, China
- College of Intelligent Systems Science and Engineering, Hubei Minzu University, Enshi, 445000, China
| | - Qiang Li
- College of Intelligent Systems Science and Engineering, Hubei Minzu University, Enshi, 445000, China
| | - Dahua Ren
- College of Intelligent Systems Science and Engineering, Hubei Minzu University, Enshi, 445000, China
| | - Hua-Hua Fu
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China.
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44
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Kalt RA, Arcifa A, Wäckerlin C, Stemmer A. CVD of MoS 2 single layer flakes using Na 2MoO 4 - impact of oxygen and temperature-time-profile. NANOSCALE 2023; 15:18871-18882. [PMID: 37969003 PMCID: PMC10690930 DOI: 10.1039/d3nr03907b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/04/2023] [Accepted: 10/31/2023] [Indexed: 11/17/2023]
Abstract
Two-dimensional (2D) materials are of great interest in many fields due to their astonishing properties at an atomic level thickness. Many fundamentally different methods to synthesize 2D materials, such as exfoliation or chemical vapor deposition (CVD), have been reported. Despite great efforts and progress to investigate and improve each synthesis method, mainly to increase the yield and quality of the synthesized 2D materials, most approaches still involve some compromise. Herein, we systematically investigate a chemical vapor deposition (CVD) process to synthesize molybdenum disulfide (MoS2) single layer flakes using sodium molybdate (Na2MoO4), deposited on a silica (SiO2/Si) substrate by spin-coating its aqueous solution, as the molybdenum source and sulfur powder as sulfur source, respectively. The focus lies on the impact of oxygen (O2) in the gas flow and temperature-time-profile on reaction process and product quality. Atomic force microscopy (AFM), Raman and photoluminescence (PL) spectroscopy, X-ray photoelectron spectroscopy (XPS), and time-of-flight secondary ion mass spectrometry (ToF-SIMS) were used to investigate MoS2 flakes synthesized under different exposure times of O2 and with various temperature-time-profiles. This detailed study shows that the MoS2 flakes are formed within the first few minutes of synthesis and elaborates on the necessity of O2 in the gas flow, as well as drawbacks of its presence. In addition, the applied temperature-time-profile highly affects the ability to detach MoS2 flakes from the growth substrate when immersed in water, but it has no impact on the flake.
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Affiliation(s)
- Romana Alice Kalt
- Nanotechnology Group, ETH Zürich, Säumerstrasse 4, CH-8803 Rüschlikon, Switzerland.
| | - Andrea Arcifa
- Surface Science & Coating Technologies, Swiss Federal Laboratories for Materials Science and Technology (EMPA), Überlandstrasse 129, CH-8600 Dübendorf, Switzerland
| | - Christian Wäckerlin
- Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), Station 3, CH-1015 Lausanne, Switzerland
- Laboratory for X-ray Nanoscience and Technologies, Paul-Scherrer-Institute (PSI), CH-5232 Villigen PSI, Switzerland
| | - Andreas Stemmer
- Nanotechnology Group, ETH Zürich, Säumerstrasse 4, CH-8803 Rüschlikon, Switzerland.
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45
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Wang S, Qi L, Xia Z, Wang W, Yue D, Wang S, Su S. Polarization-Sensitive Detector Based on MoTe 2/WTe 2 Heterojunction for Broadband Optoelectronic Imaging. J Phys Chem Lett 2023; 14:10509-10516. [PMID: 37970815 DOI: 10.1021/acs.jpclett.3c02685] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/19/2023]
Abstract
Polarization-sensitive detectors have significant applications in modern communication and information processing. In this study. We present a polarization-sensitive detector based on a MoTe2/WTe2 heterojunction, where WTe2 forms a favorable bandgap structure with MoTe2 after forming the heterojunction. This enhances the carrier separation efficiency and photoelectric response. We successfully achieved wide spectral detection ranging from visible to near-infrared light. Specifically, under zero bias, our photodetector exhibits a responsivity (R) of 0.6 A/W and a detectivity (D*) of 3.6 × 1013 Jones for 635 nm laser illumination. Moreover, the photoswitching ratio can approach approximately 6.3 × 105. Importantly, the polarization sensitivity can reach 3.5 (5.2) at 635 (1310) nm polarized light at zero bias. This study both unveils potential for utilizing MoTe2/WTe2 heterojunctions as polarization-sensitive detectors and provides novel insights for developing high-performance optoelectronic devices.
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Affiliation(s)
- Sujuan Wang
- Institute of Applied Physics and Materials Engineering, University of Macau, 999078 Macao SAR, P.R. China
| | - Ligan Qi
- Institute of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, P. R. China
| | - Zhonghui Xia
- Institute of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China
| | - Wenhai Wang
- College of Electrical Engineering, Hebei University of Architecture, Zhangjiakou 075000, P.R. China
| | - Dewu Yue
- Information Technology Research Institute, Shenzhen Institute of Information Technology, Shenzhen 518172, P.R. China
| | - Shuangpeng Wang
- Information Technology Research Institute, Shenzhen Institute of Information Technology, Shenzhen 518172, P.R. China
- Institute of Applied Physics and Materials Engineering, University of Macau, 999078 Macao SAR, P.R. China
| | - Shichen Su
- Institute of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China
- Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, Guangzhou 510631, P.R. China
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46
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Liu XY, Chen WK, Fang WH, Cui G. Nonadiabatic Dynamics Simulations for Photoinduced Processes in Molecules and Semiconductors: Methodologies and Applications. J Chem Theory Comput 2023. [PMID: 37984502 DOI: 10.1021/acs.jctc.3c00960] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/22/2023]
Abstract
Nonadiabatic dynamics (NAMD) simulations have become powerful tools for elucidating complicated photoinduced processes in various systems from molecules to semiconductor materials. In this review, we present an overview of our recent research on photophysics of molecular systems and periodic semiconductor materials with the aid of ab initio NAMD simulation methods implemented in the generalized trajectory surface-hopping (GTSH) package. Both theoretical backgrounds and applications of the developed NAMD methods are presented in detail. For molecular systems, the linear-response time-dependent density functional theory (LR-TDDFT) method is primarily used to model electronic structures in NAMD simulations owing to its balanced efficiency and accuracy. Moreover, the efficient algorithms for calculating nonadiabatic coupling terms (NACTs) and spin-orbit couplings (SOCs) have been coded into the package to increase the simulation efficiency. In combination with various analysis techniques, we can explore the mechanistic details of the photoinduced dynamics of a range of molecular systems, including charge separation and energy transfer processes in organic donor-acceptor structures, ultrafast intersystem crossing (ISC) processes in transition metal complexes (TMCs), and exciton dynamics in molecular aggregates. For semiconductor materials, we developed the NAMD methods for simulating the photoinduced carrier dynamics within the framework of the Kohn-Sham density functional theory (KS-DFT), in which SOC effects are explicitly accounted for using the two-component, noncollinear DFT method. Using this method, we have investigated the photoinduced carrier dynamics at the interface of a variety of van der Waals (vdW) heterojunctions, such as two-dimensional transition metal dichalcogenides (TMDs), carbon nanotubes (CNTs), and perovskites-related systems. Recently, we extended the LR-TDDFT-based NAMD method for semiconductor materials, allowing us to study the excitonic effects in the photoinduced energy transfer process. These results demonstrate that the NAMD simulations are powerful tools for exploring the photodynamics of molecular systems and semiconductor materials. In future studies, the NAMD simulation methods can be employed to elucidate experimental phenomena and reveal microscopic details as well as rationally design novel photofunctional materials with desired properties.
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Affiliation(s)
- Xiang-Yang Liu
- College of Chemistry and Material Science, Sichuan Normal University, Chengdu 610068, P. R. China
| | - Wen-Kai Chen
- Key Laboratory of Theoretical and Computational Photochemistry, Ministry of Education, College of Chemistry, Beijing Normal University, Beijing 100875, P. R. China
| | - Wei-Hai Fang
- Key Laboratory of Theoretical and Computational Photochemistry, Ministry of Education, College of Chemistry, Beijing Normal University, Beijing 100875, P. R. China
- Hefei National Laboratory, Hefei 230088, P. R. China
| | - Ganglong Cui
- Key Laboratory of Theoretical and Computational Photochemistry, Ministry of Education, College of Chemistry, Beijing Normal University, Beijing 100875, P. R. China
- Hefei National Laboratory, Hefei 230088, P. R. China
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47
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Policht VR, Mittenzwey H, Dogadov O, Katzer M, Villa A, Li Q, Kaiser B, Ross AM, Scotognella F, Zhu X, Knorr A, Selig M, Cerullo G, Dal Conte S. Time-domain observation of interlayer exciton formation and thermalization in a MoSe 2/WSe 2 heterostructure. Nat Commun 2023; 14:7273. [PMID: 37949848 PMCID: PMC10638375 DOI: 10.1038/s41467-023-42915-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/17/2023] [Accepted: 10/26/2023] [Indexed: 11/12/2023] Open
Abstract
Vertical heterostructures of transition metal dichalcogenides (TMDs) host interlayer excitons with electrons and holes residing in different layers. With respect to their intralayer counterparts, interlayer excitons feature longer lifetimes and diffusion lengths, paving the way for room temperature excitonic optoelectronic devices. The interlayer exciton formation process and its underlying physical mechanisms are largely unexplored. Here we use ultrafast transient absorption spectroscopy with a broadband white-light probe to simultaneously resolve interlayer charge transfer and interlayer exciton formation dynamics in a MoSe2/WSe2 heterostructure. We observe an interlayer exciton formation timescale nearly an order of magnitude (~1 ps) longer than the interlayer charge transfer time (~100 fs). Microscopic calculations attribute this relative delay to an interplay of a phonon-assisted interlayer exciton cascade and thermalization, and excitonic wave-function overlap. Our results may explain the efficient photocurrent generation observed in optoelectronic devices based on TMD heterostructures, as the interlayer excitons are able to dissociate during thermalization.
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Affiliation(s)
- Veronica R Policht
- Department of Physics, Politecnico di Milano, Piazza Leonardo da Vinci 32, Milano, 20133, Italy.
- NRC Postdoc residing at U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC, 20375, USA.
| | - Henry Mittenzwey
- Institut für Theoretische Physik, Nichtlineare Optik und Quantenelektronik, Technische Universität Berlin, Hardenbergstraße 36, 10623, Berlin, Germany.
| | - Oleg Dogadov
- Department of Physics, Politecnico di Milano, Piazza Leonardo da Vinci 32, Milano, 20133, Italy
| | - Manuel Katzer
- Institut für Theoretische Physik, Nichtlineare Optik und Quantenelektronik, Technische Universität Berlin, Hardenbergstraße 36, 10623, Berlin, Germany
| | - Andrea Villa
- Department of Physics, Politecnico di Milano, Piazza Leonardo da Vinci 32, Milano, 20133, Italy
| | - Qiuyang Li
- Department of Chemistry, Columbia University, 3000 Broadway, New York, NY, 10027, USA
| | | | - Aaron M Ross
- Department of Physics, Politecnico di Milano, Piazza Leonardo da Vinci 32, Milano, 20133, Italy
| | - Francesco Scotognella
- Department of Physics, Politecnico di Milano, Piazza Leonardo da Vinci 32, Milano, 20133, Italy
- Department of Applied Science and Technology, Politecnico di Torino, Corso Duca degli Abruzzi 24, Torino, 10129, Italy
| | - Xiaoyang Zhu
- Department of Chemistry, Columbia University, 3000 Broadway, New York, NY, 10027, USA
| | - Andreas Knorr
- Institut für Theoretische Physik, Nichtlineare Optik und Quantenelektronik, Technische Universität Berlin, Hardenbergstraße 36, 10623, Berlin, Germany
| | - Malte Selig
- Institut für Theoretische Physik, Nichtlineare Optik und Quantenelektronik, Technische Universität Berlin, Hardenbergstraße 36, 10623, Berlin, Germany
| | - Giulio Cerullo
- Department of Physics, Politecnico di Milano, Piazza Leonardo da Vinci 32, Milano, 20133, Italy
- CNR-IFN, Piazza Leonardo da Vinci 32, Milano, 20133, Italy
| | - Stefano Dal Conte
- Department of Physics, Politecnico di Milano, Piazza Leonardo da Vinci 32, Milano, 20133, Italy.
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48
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Arfaoui M, Zawadzka N, Ayari S, Chen Z, Watanabe K, Taniguchi T, Babiński A, Koperski M, Jaziri S, Molas MR. Optical properties of orthorhombic germanium sulfide: unveiling the anisotropic nature of Wannier excitons. NANOSCALE 2023; 15:17014-17028. [PMID: 37843442 DOI: 10.1039/d3nr03168c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/17/2023]
Abstract
To fully explore exciton-based applications and improve their performance, it is essential to understand the exciton behavior in anisotropic materials. Here, we investigate the optical properties of anisotropic excitons in GeS encapsulated by h-BN using different approaches that combine polarization- and temperature-dependent photoluminescence (PL) measurements, ab initio calculations, and effective mass approximation (EMA). Using the Bethe-Salpeter Equation (BSE) method, we found that the optical absorption spectra in GeS are significantly affected by the Coulomb interaction included in the BSE method, which shows the importance of excitonic effects besides it exhibits a significant dependence on the direction of polarization, revealing the anisotropic nature of bulk GeS. By combining ab initio calculations and EMA methods, we investigated the quasi-hydrogenic exciton states and oscillator strength (OS) of GeS along the zigzag and armchair axes. We found that the anisotropy induces lifting of the degeneracy and mixing of the excitonic states in GeS, which results in highly non-hydrogenic features. A very good agreement with the experiment is observed.
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Affiliation(s)
- Mehdi Arfaoui
- Laboratoire de Physique de la Matière Condensée, Département de Physique, Faculté des Sciences de Tunis, Université Tunis El Manar, Campus Universitaire, 1060 Tunis, Tunisia.
| | - Natalia Zawadzka
- Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Warsaw, Poland.
| | - Sabrine Ayari
- Laboratoire de Physique de l'Ecole normale supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université de Paris, 24 rue Lhomond, 75005 Paris, France
| | - Zhaolong Chen
- Institute for Functional Intelligent Material, National University of Singapore, 117575, Singapore
- Department of Materials Science and Engineering, National University of Singapore, 117575, Singapore
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Adam Babiński
- Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Warsaw, Poland.
| | - Maciej Koperski
- Institute for Functional Intelligent Material, National University of Singapore, 117575, Singapore
- Department of Materials Science and Engineering, National University of Singapore, 117575, Singapore
| | - Sihem Jaziri
- Laboratoire de Physique de la Matière Condensée, Département de Physique, Faculté des Sciences de Tunis, Université Tunis El Manar, Campus Universitaire, 1060 Tunis, Tunisia.
| | - Maciej R Molas
- Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Warsaw, Poland.
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49
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Mehrez JAA, Chen X, Zeng M, Yang J, Hu N, Wang T, Liu R, Xu L, González-Alfaro Y, Yang Z. MoTe 2/InN van der Waals heterostructures for gas sensors: a DFT study. Phys Chem Chem Phys 2023; 25:28677-28690. [PMID: 37849357 DOI: 10.1039/d3cp02906a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/19/2023]
Abstract
Vertical van der Waals (vdW) heterostructures have shown potential for gas sensing owing to their remarkable sensitivity. However, the optimization process for achieving the best gas sensing performance is complicated by the heterostructure's reliance on both physical and electrical characteristics. This study employs density functional theory (DFT) to analyse the structural and electronic parameters of a MoTe2/InN vdW heterostructure. The findings of this study indicate that the vdW heterostructure has a type-II band alignment with higher adsorption energy towards NH3, NO2, and SO2 than the individual monolayers. In specific, the heterostructure is well suited for NO2 detection but has limitations in reliably detecting NH3 and SO2 due to longer recovery times. We find significant hybridization between the adsorbate and interacting surfaces' orbitals and a notable presence of NO2 molecular orbitals in proximity to the Fermi level. Additionally, dielectric and work function modulations offer a viable means to develop optical-based gas sensors that can selectively detect NO2. Our research provides valuable insights into vdW heterostructure design for high-performance gas sensors.
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Affiliation(s)
- Jaafar Abdul-Aziz Mehrez
- Key Laboratory of Thin Film and Microfabrication (Ministry of Education), Department of Micro/Nano Electronics, School of Electronics Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China.
| | - Xiyu Chen
- Key Laboratory of Thin Film and Microfabrication (Ministry of Education), Department of Micro/Nano Electronics, School of Electronics Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China.
| | - Min Zeng
- Key Laboratory of Thin Film and Microfabrication (Ministry of Education), Department of Micro/Nano Electronics, School of Electronics Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China.
| | - Jianhua Yang
- Key Laboratory of Thin Film and Microfabrication (Ministry of Education), Department of Micro/Nano Electronics, School of Electronics Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China.
| | - Nantao Hu
- Key Laboratory of Thin Film and Microfabrication (Ministry of Education), Department of Micro/Nano Electronics, School of Electronics Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China.
| | - Tao Wang
- Key Laboratory of Thin Film and Microfabrication (Ministry of Education), Department of Micro/Nano Electronics, School of Electronics Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China.
| | - Ruili Liu
- Key Laboratory of Thin Film and Microfabrication (Ministry of Education), Department of Micro/Nano Electronics, School of Electronics Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China.
| | - Lin Xu
- Department of Ophthalmology, Shanghai General Hospital (Shanghai First People's Hospital), Shanghai Jiao Tong University School of Medicine, National Clinical Research Centre for Eye Diseases, Shanghai Key Laboratory of Ocular Fundus Diseases, Shanghai Engineering Centre for Visual Science and Photomedicine, Shanghai 200080, People's Republic of China
| | | | - Zhi Yang
- Key Laboratory of Thin Film and Microfabrication (Ministry of Education), Department of Micro/Nano Electronics, School of Electronics Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China.
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50
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Connor BA, Su AC, Slavney AH, Leppert L, Karunadasa HI. Understanding the evolution of double perovskite band structure upon dimensional reduction. Chem Sci 2023; 14:11858-11871. [PMID: 37920347 PMCID: PMC10619643 DOI: 10.1039/d3sc03105e] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/17/2023] [Accepted: 09/10/2023] [Indexed: 11/04/2023] Open
Abstract
Recent investigations into the effects of dimensional reduction on halide double perovskites have revealed an intriguing change in band structure when the three-dimensional (3D) perovskite is reduced to a two-dimensional (2D) perovskite with inorganic sheets of monolayer thickness (n = 1). The indirect bandgap of 3D Cs2AgBiBr6 becomes direct in the n = 1 perovskite whereas the direct bandgap of 3D Cs2AgTlBr6 becomes indirect at the n = 1 limit. Here, we apply a linear combination of atomic orbitals approach to uncover the orbital basis for this bandgap symmetry transition with dimensional reduction. We adapt our previously established method for predicting band structures of 3D double perovskites for application to their 2D congeners, emphasizing new considerations required for the 2D lattice. In particular, we consider the inequivalence of the terminal and bridging halides and the consequences of applying translational symmetry only along two dimensions. The valence and conduction bands of the layered perovskites can be derived from symmetry adapted linear combinations of halide p orbitals propagated across the 2D lattice. The dispersion of each band is then determined by the bonding and antibonding interactions of the metal and halide orbitals, thus affording predictions of the essential features of the band structure. We demonstrate this analysis for 2D Ag-Bi and Ag-Tl perovskites with sheets of mono- and bilayer thickness, establishing a detailed understanding of their band structures, which enables us to identify the key factors that drive the bandgap symmetry transitions observed at the n = 1 limit. Importantly, these insights also allow us to make the general prediction that direct → indirect or indirect → direct bandgap transitions in the monolayer limit are most likely in double perovskite compositions that involve participation of metal d orbitals at the band edges or that have no metal-orbital contributions to the valence band, laying the groundwork for the targeted realization of this phenomenon.
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Affiliation(s)
- Bridget A Connor
- Department of Chemistry, Stanford University Stanford CA 94305 USA
| | - Alexander C Su
- Department of Chemistry, Stanford University Stanford CA 94305 USA
| | - Adam H Slavney
- Department of Chemistry, Stanford University Stanford CA 94305 USA
| | - Linn Leppert
- MESA+ Institute for Nanotechnology, University of Twente 7500 AE Enschede The Netherlands
| | - Hemamala I Karunadasa
- Department of Chemistry, Stanford University Stanford CA 94305 USA
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory Menlo Park CA 94025 USA
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