Low temperature critical growth of high quality nitrogen doped graphene on dielectrics by plasma-enhanced chemical vapor deposition

Transparent Electronics for Wearable Electronics Application

Recent advancements in wearable electronics offer seamless integration with the human body for extracting various biophysical and biochemical information for real-time health monitoring, clinical diagnostics, and augmented reality. Enormous efforts have been dedicated to imparting stretchability/flexibility and softness to electronic devices through materials science and structural modifications that enable stable and comfortable integration of these devices with the curvilinear and soft human body. However, the optical properties of these devices are still in the early stages of consideration. By incorporating transparency, visual information from interfacing biological systems can be preserved and utilized for comprehensive clinical diagnosis with image analysis techniques. Additionally, transparency provides optical imperceptibility, alleviating reluctance to wear the device on exposed skin. This review discusses the recent advancement of transparent wearable electronics in a comprehensive way that includes materials, processing, devices, and applications. Materials for transparent wearable electronics are discussed regarding their characteristics, synthesis, and engineering strategies for property enhancements. We also examine bridging techniques for stable integration with the soft human body. Building blocks for wearable electronic systems, including sensors, energy devices, actuators, and displays, are discussed with their mechanisms and performances. Lastly, we summarize the potential applications and conclude with the remaining challenges and prospects.

Biosensor Based on Graphene Directly Grown by MW-PECVD for Detection of COVID-19 Spike (S) Protein and Its Entry Receptor ACE2

Biosensors based on graphene field-effect transistors (G-FET) for detecting COVID-19 spike S protein and its receptor ACE2 were reported. The graphene, directly synthesized on SiO2/Si substrate by microwave plasma-enhanced chemical vapor deposition (MW-PECVD), was used for FET biosensor fabrication. The commercial graphene, CVD-grown on a copper substrate and subsequently transferred onto a glass substrate, was applied for comparison purposes. The graphene structure and surface morphology were studied by Raman scattering spectroscopy and atomic force microscope. Graphene surfaces were functionalized by an aromatic molecule PBASE (1-pyrenebutanoic acid succinimidyl ester), and subsequent immobilization of the receptor angiotensin-converting enzyme 2 (ACE2) was performed. A microfluidic system was developed, and transfer curves of liquid-gated FET were measured after each graphene surface modification procedure to investigate ACE2 immobilization by varying its concentration and subsequent spike S protein detection. The directly synthesized graphene FET sensitivity to the receptor ACE2, evaluated in terms of the Dirac voltage shift, exceeded the sensitivity of the transferred commercial graphene-based FET. The concentration of the spike S protein was detected in the range of 10 ag/mL up to 10 μg/mL by using a developed microfluidic system and measuring the transfer characteristics of the liquid-gated G-FETs. It was found that the shift of the Dirac voltage depends on the spike S concentration and was 27 mV with saturation at 10 pg/mL for directly synthesized G-FET biosensor, while for transferred G-FET, the maximal shift of 70 mV was obtained at 10 μg/mL with a tendency of saturation at 10 ng/mL. The detection limit as low as 10 ag/mL was achieved for both G-FETs. The sensitivity of the biosensors at spike S concentration of 10 pg/mL measured as relative current change at a constant gate voltage corresponding to the highest transconductance of the G-FETs was found at 5.6% and 8.8% for directly synthesized and transferred graphene biosensors, respectively. Thus, MW-PECVD-synthesized graphene-based biosensor demonstrating high sensitivity and low detection limit has excellent potential for applications in COVID-19 diagnostics.

N-Doped Graphene-like Film/Silicon Structures as Micro-Capacitor Electrodes

Currently, the miniaturization of portable and autonomous devices is challenging for modern electronics. Graphene-based materials have recently emerged as one of the ideal candidates for supercapacitor electrodes, while Si is a common platform for direct component-on-chip integration. We have proposed the direct liquid-based CVD of N-doped graphene-like films (N-GLFs) on Si as a promising way to achieve solid-state on-chip micro-capacitor performance. Synthesis temperatures in the range from 800 °C to 1000 °C are investigated. Capacitances and electrochemical stability of the films are evaluated using cyclic voltammetry, as well as galvanostatic measurements and electrochemical impedance spectroscopy in 0.5 M Na₂SO₄. We have shown that N-doping is an efficient way to improve the N-GLF capacitance. 900 °C is the optimal temperature for the N-GLF synthesis with the best electrochemical properties. The capacitance rises with increasing film thickness which also has an optimum (about 50 nm). The transfer-free acetonitrile-based CVD on Si yields a perfect material for microcapacitor electrodes. Our best value of the area-normalized capacitance (960 mF/cm²) exceeds the world's achievements among thin graphene-based films. The main advantages of the proposed approach are the direct on-chip performance of the energy storage component and high cyclic stability.

Heterostructure Engineering of 2D Superlattice Materials for Electrocatalysis

Exploring low-cost and high-efficient electrocatalyst is an exigent task in developing novel sustainable energy conversion systems, such as fuel cells and electrocatalytic fuel generations. 2D materials, specifically 2D superlattice materials focused here, featured highly accessible active areas, high density of active sites, and high compatibility with property-complementary materials to form heterostructures with desired synergetic effects, have demonstrated to be promising electrocatalysts for boosting the performance of sustainable energy conversion and storage devices. Nevertheless, the reaction kinetics, and in particular, the functional mechanisms of the 2D superlattice-based catalysts yet remain ambiguous. In this review, based on the recent progress of 2D superlattice materials in electrocatalysis applications, the rational design and fabrication of 2D superlattices are first summarized and the application of 2D superlattices in electrocatalysis is then specifically discussed. Finally, perspectives on the current challenges and the strategies for the future design of 2D superlattice materials are outlined. This review attempts to establish an intrinsic correlation between the 2D superlattice heterostructures and the catalytic properties, so as to provide some insights into developing high-performance electrocatalysts for next-generation sustainable energy conversion and storage.

N-doped graphene for electrocatalytic O2 and CO2 reduction

The electrocatalytic CO₂ reduction reaction (CO₂RR) and oxygen reduction reaction (ORR) are important approaches to realize energy conversion and sustainable development. However, sluggish reaction kinetics severely hinders the practical application of devices related to these reactions. N-doped graphene (NG) with unique properties exhibits great potential in catalyzing the CO₂RR and ORR, which is attributed to the electron redistribution. In this review, we start from the fundamental properties of NG, especially emphasizing the changes caused by N doping. Then the synthetic methods are summarized by classifying them into top-down strategies and bottom-up strategies. Subsequently, the applications of NG in the ORR and CO₂RR are discussed and the effects of electronic structure on the electrocatalytic activity are highlighted. Finally, we give our own perspective on the future research direction of NG in the applications of the ORR and CO₂RR.

Recent Progress in Graphene-Based Electrocatalysts for Hydrogen Evolution Reaction

Hydrogen is regarded as a key renewable energy source to meet future energy demands. Moreover, graphene and its derivatives have many advantages, including high electronic conductivity, controllable morphology, and eco-friendliness, etc., which show great promise for electrocatalytic splitting of water to produce hydrogen. This review article highlights recent advances in the synthesis and the applications of graphene-based supported electrocatalysts in hydrogen evolution reaction (HER). Herein, powder-based and self-supporting three-dimensional (3D) electrocatalysts with doped or undoped heteroatom graphene are highlighted. Quantum dot catalysts such as carbon quantum dots, graphene quantum dots, and fullerenes are also included. Different strategies to tune and improve the structural properties and performance of HER electrocatalysts by defect engineering through synthetic approaches are discussed. The relationship between each graphene-based HER electrocatalyst is highlighted. Apart from HER electrocatalysis, the latest advances in water electrolysis by bifunctional oxygen evolution reaction (OER) and HER performed by multi-doped graphene-based electrocatalysts are also considered. This comprehensive review identifies rational strategies to direct the design and synthesis of high-performance graphene-based electrocatalysts for green and sustainable applications.

Preparation of a Vertical Graphene-Based Pressure Sensor Using PECVD at a Low Temperature

Flexible pressure sensors have received much attention due to their widespread potential applications in electronic skins, health monitoring, and human-machine interfaces. Graphene and its derivatives hold great promise for two-dimensional sensing materials, owing to their superior properties, such as atomically thin, transparent, and flexible structure. The high performance of most graphene-based pressure piezoresistive sensors relies excessively on the preparation of complex, post-growth transfer processes. However, the majority of dielectric substrates cannot hold in high temperatures, which can induce contamination and structural defects. Herein, a credibility strategy is reported for directly growing high-quality vertical graphene (VG) on a flexible and stretchable mica paper dielectric substrate with individual interdigital electrodes in plasma-enhanced chemical vapor deposition (PECVD), which assists in inducing electric field, resulting in a flexible, touchable pressure sensor with low power consumption and portability. Benefitting from its vertically directed graphene microstructure, the graphene-based sensor shows superior properties of high sensitivity (4.84 KPa^-1) and a maximum pressure range of 120 KPa, as well as strong stability (5000 cycles), which makes it possible to detect small pulse pressure and provide options for preparation of pressure sensors in the future.

Structural and Chemical Peculiarities of Nitrogen-Doped Graphene Grown Using Direct Microwave Plasma-Enhanced Chemical Vapor Deposition

Chemical vapor deposition (CVD) is an attractive technique which allows graphene with simultaneous heteroatom doping to be synthesized. In most cases, graphene is grown on a catalyst, followed by the subsequent transfer process. The latter is responsible for the degradation of the carrier mobility and conductivity of graphene due to the presence of the absorbants and transfer-related defects. Here, we report the catalyst-less and transfer-less synthesis of graphene with simultaneous nitrogen doping in a single step at a reduced temperature (700 °C) via the use of direct microwave plasma-enhanced CVD. By varying nitrogen flow rate, we explored the resultant structural and chemical properties of nitrogen-doped graphene. Atomic force microscopy revealed a more distorted growth process of graphene structure with the introduction of nitrogen gas—the root mean square roughness increased from 0.49 ± 0.2 nm to 2.32 ± 0.2 nm. Raman spectroscopy indicated that nitrogen-doped, multilayer graphene structures were produced using this method. X-ray photoelectron spectroscopy showed the incorporation of pure pyridinic N dopants into the graphene structure with a nitrogen concentration up to 2.08 at.%.

Two-Dimensional Field-Effect Transistor Sensors: The Road toward Commercialization

The evolutionary success in information technology has been sustained by the rapid growth of sensor technology. Recently, advances in sensor technology have promoted the ambitious requirement to build intelligent systems that can be controlled by external stimuli along with independent operation, adaptivity, and low energy expenditure. Among various sensing techniques, field-effect transistors (FETs) with channels made of two-dimensional (2D) materials attract increasing attention for advantages such as label-free detection, fast response, easy operation, and capability of integration. With atomic thickness, 2D materials restrict the carrier flow within the material surface and expose it directly to the external environment, leading to efficient signal acquisition and conversion. This review summarizes the latest advances of 2D-materials-based FET (2D FET) sensors in a comprehensive manner that contains the material, operating principles, fabrication technologies, proof-of-concept applications, and prototypes. First, a brief description of the background and fundamentals is provided. The subsequent contents summarize physical, chemical, and biological 2D FET sensors and their applications. Then, we highlight the challenges of their commercialization and discuss corresponding solution techniques. The following section presents a systematic survey of recent progress in developing commercial prototypes. Lastly, we summarize the long-standing efforts and prospective future development of 2D FET-based sensing systems toward commercialization.

Size Optimization of a N-Doped Graphene Nanocluster for the Oxygen Reduction Reaction

N-Doped graphene nanoclusters (N-GNCs) are promising electrocatalysts for the oxygen reduction reaction (ORR) at the cathode of fuel cells. In this study, the dependence of the ORR activity on the size of N-GNCs was investigated using first-principles calculations based on density functional theory. The maximum electrode potential (U _Max) was estimated from the free energy of the reaction intermediates of the ORR. U _Max was predicted to show a volcanic trend with respect to the cluster size. The results suggest that C₂₁₅H₃₆N with a radius of 13.6 Å is the best candidate for ORRs and is better than platinum in terms of U _Max. The volcano-shaped plot of U _Max is attributed to the switch of the reaction step that determines U _Max, which is caused by the destabilization of reaction intermediates. Such changes in the stability of the intermediates can be explained by the decrease in the local density of states at the reaction site, which is due to the development of the so-called edge state at the zigzag edge. The establishment of experimental techniques to control the cluster size and doping position will be the key to superior catalyst preparation in the future.

Carbon-dot doped, transfer-free, low-temperature, high mobility graphene using microwave plasma CVD

Microwave plasma chemical vapor deposition is a well-known method for low-temperature, large-area direct graphene growth on any insulating substrate without any catalysts.

Low-Temperature Nitrogen Doping of Nanocrystalline Graphene Films with Tunable Pyridinic-N and Pyrrolic-N by Cold-Wall Plasma-Assisted Chemical Vapor Deposition

We report a viable method to produce nanocrystalline graphene films on polycrystalline nickel (Ni) with enhanced N doping at low temperatures by a cold-wall plasma-assisted chemical vapor deposition (CVD) method. The growth of nanocrystalline graphene films was carried out in a benzene/ammonia/argon (C₆H₆/NH₃/Ar) system, in which the temperature of the substrate heated by Joule heating can be further lowered to 100 °C to achieve a low sheet resistance of 3.3 kΩ sq^-1 at a high optical transmittance of 97.2%. The morphological, structural, and electrical properties and the chemical compositions of the obtained N-doped nanocrystalline graphene films can be tailored by controlling the growth parameters. An increase in the concentration of atomic N from 1.42 to 11.28 atomic percent (at.%) is expected due to the synergetic effects of a high NH₃/Ar ratio and plasma power. The possible growth mechanism of nanocrystalline graphene films is also discussed to understand the basic chemical reactions that occur at such low temperatures with the presence of plasma as well as the formation of pyridinic-N- and pyrrolic-N-dominated nanocrystalline graphene. The realization of nanocrystalline graphene films with enhanced N doping at 100 °C may open great potential in developing future transparent nanodevices.

Plasma-Enhanced Chemical Vapor Deposition of Two-Dimensional Materials for Applications

ConspectusSince the rise of two-dimensional (2D) materials, synthetic methods including mechanical exfoliation, solution synthesis, and chemical vapor deposition (CVD) have been developed. Mechanical exfoliation prepares randomly shaped materials with small size. Solution synthesis introduces impurities that degrade the performances. CVD is the most successful one for low-cost scalable preparation. However, when it comes to practical applications, disadvantages such as high operating temperature (∼1000 °C), probable usage of metal catalysts, contamination, defects, and interstices introduced by postgrowth transfer are not negligible. These are the reasons why plasma-enhanced CVD (PECVD), a method that enables catalyst-free in situ preparation at low temperature, is imperatively desirable.In this Account, we summarize our recent progress on controllable preparation of 2D materials by PECVD and their applications. We found that there was a competition between etching and nucleation and deposition in PECVD, making it highly controllable to obtain desired materials. Under different equilibrium states of the competition, various 2D materials with diverse morphologies and properties were prepared including pristine or nitrogen-doped graphene crystals, graphene quantum dots, graphene nanowalls, hexagonal boron nitride (h-BN), B-C-N ternary materials (BC_xN), etc. We also used mild plasma to modify or treat 2D materials (e.g., WSe₂) for desired properties.PECVD has advantages such as low temperature, transfer-free process, and industrial compatibility, which enable facile, scalable, and low-cost preparation of 2D materials with clean surfaces and interfaces directly on noncatalytic substrates. These merits significantly benefit the as-prepared materials in the applications. Field-effect transistors with high motilities were directly fabricated on graphene and nitrogen-doped graphene. By use of h-BN as the dielectric interfacial layer, both mobilities and saturated power densities of the devices were improved owing to the clean, closely contacted interface and enhanced interfacial thermal dissipation. High-quality materials and interfaces also enabled promising applications of these materials in photodetectors, pressure sensors, biochemical sensors, electronic skins, Raman enhancement, etc. To demonstrate the commercial applications, several prototypical devices were studied such as distributed pressure sensor arrays, touching module on a robot hand for braille recognition, and smart gloves for recording sign language. Finally, we discuss opportunities and challenges of PECVD as a comprehensive preparation methodology of 2D materials for future applications beyond traditional CVD.

Electronic Transport and Corrosion Mechanisms of Graphite-Like Nanocrystalline Carbon Films Used on Metallic Bipolar Plates in Proton-Exchange Membrane Fuel Cells

Nanocrystalline carbon films, which consist of graphite-like nanocrystals within an amorphous carbon matrix, have recently attracted extensive theoretical and experimental attention. Understanding the electronic transport and corrosion mechanisms of graphite-like nanocrystalline carbon films (GNCFs) is essential for their application in proton-exchange membrane fuel cells (PEMFCs). So far, limited progress has been made on the electronic or atomistic understanding of how the degree of structural order and grain boundaries affect the electronic transport and corrosion behaviors of GNCFs. In this work, using the Landauer-Büttiker formula merged with first-principles density functional theory, the conductance of GNCFs is presented as a function of their crystallinity. As the crystallinity decreases, the electron states around the Fermi level are found to be more spatially localized, thus hindering the electronic transport of GNCFs. Additionally, a systemic picture of the chemical reactivity of nanostructured surface in GNCFs toward typical particles existing in PEMFCs is drawn by ab initio molecular dynamics simulations. Systemic experimental investigations on the corrosion mechanisms of GNCFs used in PEMFCs have been conducted in this work. Compared with pure amorphous carbon films, the GNCFs exhibit higher corrosion current densities due to the preferential corrosion in the larger slit pores at the grain boundaries, but their stability in interfacial contact resistance is significantly improved by the embedded graphite-like nanocrystals, which have high levels of resistance to oxygen chemical adsorptions and act as high-speed ways to transport electrons.

Enhanced electrostatic potential with high energy and power density of a symmetric and asymmetric solid-state supercapacitor of boron and nitrogen co-doped reduced graphene nanosheets for energy storage devices

Schematic representation of boron and nitrogen co-doped graphene nanosheets.

New Insights into Co-pyrolysis among Graphitic Carbon Nitride and Organic Compounds: Carbonaceous Gas Fragments Induced Synthesis of Ultrathin Mesoporous Nitrogen-Doped Carbon Nanosheets for Heterogeneous Catalysis

N-doped carbon materials are well known as promising metal-free catalysts and applied in innumerable industrial synthetics. However, most of the N-doped carbon materials obtained by conventional synthetic means exhibit generally low mesoporosity, and their reported pore volumes reached only 1-3 cm³ g^-1, which greatly limits their further industrial application in heterogeneous catalysis. Especially for oxidation reaction of alkylbenzenes, this type of reaction is almost always accompanied by many different byproducts, while the reaction activity and selectivity are mainly affected by mesoporosity of catalysts. Traditionally, graphitic carbon nitride (GCN) is commonly considered as a self-sacrificed nitrogen source together with multifarious organic compounds to obtain N-doped carbon materials by a co-pyrolysis process. However, the mechanisms of formation process are still complex and uncontrollable to date. In this work, we present a novel co-pyrolysis synthetic strategy by a facile chemical vapor deposition method for preparing a series of ultrathin N-doped carbon nanosheets with high mesoporosity. More importantly, it is found that GCN containing abundant hydrogen bonds can be irreversibly anchored by carbonaceous gas fragments (C_xH_y⁺) released from various organic substances via thermogravimetry-differential thermal analysis coupled with mass spectrometry and X-ray photoelectron spectroscopy analysis, and the C_xH_y⁺ fragments exhibit a non-negligible role during the transformation. Our results further demonstrated that the residue of incompletely decomposed GCN is a key point to enlarge porosity in final products which are obtained via mixing pyrolysis between an organic precursor and GCN (or GCN precursors). Benefitting from the outstanding mesoporosity and ultrathin morphology, the representative ABCNS-900 exhibits excellent catalytic performance for oxidizing ethylbenzene to acetophenone with extremely low dosage and high selectivity. Our findings show a universal synthetic strategy for ultrathin N-rich carbon nanosheets with a high mesopore volume, further promoting the application of N-doped carbon materials in heterogeneous catalytic industry.

Highly Conductive Nitrogen-Doped Vertically Oriented Graphene toward Versatile Electrode-Related Applications

The direct growth of vertically oriented graphene (VG) on low-priced, easily accessible soda-lime glass can propel its applications in transparent electrodes and energy-relevant areas. However, graphene deposited at low temperature (∼600 °C) on the catalysis-free insulating substrates usually presents high defect density, poor crystalline quality, and unsatisfactory electrical conductivity. To tackle this issue, we select high borosilicate glass as the growth substrate (softening point ∼850 °C), which can resist higher growth temperature and thus afford higher graphene crystalline quality, by using a radio-frequency plasma-enhanced chemical vapor deposition (rf-PECVD) route. A nitrogen doping strategy is also combined to tailor the carrier concentration through a methane/acetonitrile-precursor-based synthetic strategy. The sheet resistance of as-grown nitrogen-doped (N-doped) VG films on high borosilicate glass can thus be lowered down to ∼2.3 kΩ·sq^-1 at a transmittance of 88%, less than half of the methane-precursor-based PECVD product. Significantly, this synthetic route allows the achievement of 30-inch-scale uniform N-doped graphene glass, thus promoting its applications as excellent electrodes in high-performance switchable windows. Additionally, such N-doped VG films were also employed as efficient electrocatalysts for electrocatalytic hydrogen evolution reaction.

Exclusive Substitutional Nitrogen Doping on Graphene Decoupled from an Insulating Substrate

The on-surface synthesis of atomically flat N-doped graphene on oxidized copper is presented. Besides circumventing the almost standard use of metallic substrates for growth, this method allows producing graphene with ∼2.0 at % N in a substitutional configuration directly decoupled from the substrate. Angle-resolved photoemission shows a linear energy-momentum dispersion where the Dirac point lies at the Fermi level. Additionally, the N functional centers can be selectively tailored in sp² substitutional configuration by making use of a purpose-made molecular precursor: dicyanopyrazophenanthroline (C₁₆H₆N₆).

Recent advances in graphene monolayers growth and their biological applications: A review

Development of two-dimensional high-quality graphene monolayers has recently received great concern owing to their enormous applications in diverging fields including electronics, photonics, composite materials, paints and coatings, energy harvesting and storage, sensors and metrology, and biotechnology. As a result, various groups have successfully developed graphene layers on different substrates by using the chemical vapor deposition method and explored their physical properties. In this direction, we have focused on the state-of-the-art developments in the growth of graphene layers, and their functional applications in biotechnology. The review starts with the introduction, which contains outlines about the graphene and their basic characteristics. A brief history and inherent applications of graphene layers followed by recent developments in growth and properties are described. Then, the application of graphene layers in biodevices is reviewed. Finally, the review is summarized with perspectives and future challenges along with the scope for future technological applications.

Prospects for microwave plasma synthesized N-graphene in secondary electron emission mitigation applications

The ability to change the secondary electron emission properties of nitrogen-doped graphene (N-graphene) has been demonstrated. To this end, a novel microwave plasma-enabled scalable route for continuous and controllable fabrication of free-standing N-graphene sheets was developed. High-quality N-graphene with prescribed structural qualities was produced at a rate of 0.5 mg/min by tailoring the high energy density plasma environment. Up to 8% of nitrogen doping levels were achieved while keeping the oxygen content at residual amounts (~ 1%). The synthesis is accomplished via a single step, at atmospheric conditions, using ethanol/methane and ammonia/methylamine as carbon and nitrogen precursors. The type and level of doping is affected by the position where the N-precursor is injected in the plasma environment and by the type of precursors used. Importantly, N atoms incorporated predominantly in pyridinic/pyrrolic functional groups alter the performance of the collective electronic oscillations, i.e. plasmons, of graphene. For the first time it has been demonstrated that the synergistic effect between the electronic structure changes and the reduction of graphene π-plasmons caused by N doping, along with the peculiar "crumpled" morphology, leads to sub-unitary (< 1) secondary electron yields. N-graphene can be considered as a prospective low secondary electron emission and plasmonic material.

Catalyst-Free Growth of Two-Dimensional BCxN Materials on Dielectrics by Temperature-Dependent Plasma-Enhanced Chemical Vapor Deposition

Traditional methods to prepare two-dimensional (2D) B-C-N ternary materials (BC_xN), such as chemical vapor deposition (CVD), require sophisticated experimental conditions such as high temperature, delicate control of precursors, and postgrowth transfer from catalytic substrates, and the products are generally thick or bulky films without the atomically mixed phase of B-C-N, hampering practical applications of these materials. Here, for the first time, we develop a temperature-dependent plasma-enhanced chemical vapor deposition (PECVD) method to grow 2D BC_xN materials directly on noncatalytic dielectrics at low temperature with high controllability. The C, N, and B compositions can be tuned by simply changing the growth temperature. Thus, the properties of the as-made materials including band gap and conductivity are modulated, which is hardly achieved by other methods. A 2D hybridized BC₂N film with a mixed BC₂N phase is produced, for the first time, with a band gap of about 2.3 eV. The growth temperature is 580-620 °C, much lower than that of traditional catalytic CVD for growing BC_xN. The product has a p-type conducting property and can be directly applied in field-effect transistors and sensors without postgrowth transfer, showing great promise for this method in future applications.

Review of fabrication methods of large-area transparent graphene electrodes for industry

Graphene is a two-dimensional material showing excellent properties for utilization in transparent electrodes; it has low sheet resistance, high optical transmission and is flexible. Whereas the most common transparent electrode material, tin-doped indium-oxide (ITO) is brittle, less transparent and expensive, which limit its compatibility in flexible electronics as well as in low-cost devices. Here we review two large-area fabrication methods for graphene based transparent electrodes for industry: liquid exfoliation and low-pressure chemical vapor deposition (CVD). We discuss the basic methodologies behind the technologies with an emphasis on optical and electrical properties of recent results. State-of-the-art methods for liquid exfoliation have as a figure of merit an electrical and optical conductivity ratio of 43.5, slightly over the minimum required for industry of 35, while CVD reaches as high as 419.

Ultrasensitive Field-Effect Biosensors Enabled by the Unique Electronic Properties of Graphene

This review provides a critical overview of current developments on nanoelectronic biochemical sensors based on graphene. Composed of a single layer of conjugated carbon atoms, graphene has outstanding high carrier mobility and low intrinsic electrical noise, but a chemically inert surface. Surface functionalization is therefore crucial to unravel graphene sensitivity and selectivity for the detection of targeted analytes. To achieve optimal performance of graphene transistors for biochemical sensing, the tuning of the graphene surface properties via surface functionalization and passivation is highlighted, as well as the tuning of its electrical operation by utilizing multifrequency ambipolar configuration and a high frequency measurement scheme to overcome the Debye screening to achieve low noise and highly sensitive detection. Potential applications and prospectives of ultrasensitive graphene electronic biochemical sensors ranging from environmental monitoring and food safety, healthcare and medical diagnosis, to life science research, are presented as well.

Ethanol-Precursor-Mediated Growth and Thermochromic Applications of Highly Conductive Vertically Oriented Graphene on Soda-Lime Glass

Direct growth of vertically oriented graphene (VG) nanowalls on soda-lime glass has practical significance in extending the application of graphene to daily-life-related areas, such as gas sensors and conductive electrodes, via combining their complementary properties and applications. However, VG films derived by low-temperature deposition (e.g., on glass) usually present relatively low conductivity and optical transparency. To tackle this issue, an ethanol-precursor-based, radio-frequency plasma-enhanced chemical vapor deposition (rf-PECVD) route for the synthesis of VG nanowalls is developed in this research, at around the softening temperature of soda-lime glass (∼600 °C) templates. The average sheet resistance, i.e., ∼2.4 kΩ·sq^-1 (at transmittance ∼81.6%), is only one-half of that achieved by a traditional methane-precursor-based PECVD route. Based on the highly conductive and optically transparent VG/glass, as well as its scalable size up to 25 in. scale, high-performance reversible thermochromic devices were successfully constructed using VG/glass as transparent heaters. Hereby, this work should propel the scalable synthesis and applications of highly conductive VG films on glass in next-generation transparent electronics and switchable windows.

Polymeric nano-vesicles via intermolecular action to load and orally deliver insulin with enhanced hypoglycemic effect

To date few polymeric vesicles have been investigated to improve oral insulin (INS) absorption due to their limited loading capacity. Therefore, an amphiphilic polyphosphazene (PEOP) containing lipid-like octadecylphosphoethanolamine (OPA) groups and amino-modified poly(ethylene glycol) at the proper ratio was designed and synthesized in this study. It was found that PEOP can self-assemble into nano-vesicles, which displayed considerable loading capability for INS by taking advantage of the synergetic effect of the interaction between OPA and INS and the physical encapsulation by the aqueous lumen of the vesicles. Furthermore, PEOP vesicles can promote INS absorption across the subsequent lymphatic transport of PEOP vesicles after their uptake by the enterocytes in the gastrointestinal tract, and consequently achieve better hypoglycemic effects in vivo. These results suggested that PEOP vesicles have great potential as oral INS carriers for diabetes therapy.

Application of graphene nanowalls in an intraocular pressure sensor

Combining crack mechanism in GNWs with the stretchability of PDMS, a contact lens sensor exhibits excellent sensitivity to intraocular pressure.

Microwave plasma-based direct synthesis of free-standing N-graphene

Scheme of ethanol/ammonia plasma driven decomposition pathways considering injection of the nitrogen precursor in “hot” and “mild” plasma zone.

Low-temperature synthesis of sp2 carbon nanomaterials

sp² carbon nanomaterials are mainly composed of sp²-hybridized carbon atoms in the form of a hexagonal network. Due to the π bonds formed by unpaired electrons, sp² carbon nanomaterials possess excellent electronic, mechanical, and optical properties, which have attracted great attention in recent years. As the advanced sp² carbon nanomaterials, graphene and carbon nanotubes (CNTs) have great potential in electronics, sensors, energy storage and conversion devices, etc. The low-temperature synthesis of graphene and CNTs are indispensable to promote the practical industrial application. Furthermore, graphene and CNTs can even be expected to directly grow on the flexible plastic that cannot bear high temperature, expanding bright prospects for applications in emerging flexible nanotechnology. An in-depth understanding of the formation mechanism of sp² carbon nanomaterials is beneficial for reducing the growth temperature and satisfying the demands of industrial production in an economical and low-cost way. In this review, we discuss the main strategies and the related mechanisms in low-temperature synthesis of graphene and CNTs, including the selection of precursors with high reactivity, the design of catalyst, and the introduction of additional energy for the pre-decomposition of precursors. Furthermore, challenges and outlooks are highlighted for further progress in the practical industrial application.

Ultrafast Growth of Uniform Multi-Layer Graphene Films Directly on Silicon Dioxide Substrates

To realize the applications of graphene in electronics, a large-scale, high-quality, and uniform graphene film should first be placed on the dielectric substrates. Challenges still remain with respect to the current methods for the synthesis graphene directly on the dielectric substrates via chemical vapor deposition, such as a low growth rate and poor quality. Herein, we present an ultrafast method for direct growth of uniform graphene on a silicon dioxide (SiO₂/Si) substrate using methanol as the only carbon source. A 1 × 1 cm² SiO₂/Si substrate square was almost fully covered with graphene within 5 min, resulting in a record growth rate of ~33.6 µm/s. This outcome is attributed to the quick pyrolysis of methanol, with the help of trace copper atoms. The as-grown graphene exhibited a highly uniform thickness, with a sheet resistance of 0.9–1.2 kΩ/sq and a hole mobility of up to 115.4 cm²/V·s in air at room temperature. It would be quite suitable for transparent conductive electrodes in electrophoretic displays and may be interesting for related industrial applications.

Effect of Water on the Manifestation of the Reaction Selectivity of Nitrogen-Doped Graphene Nanoclusters toward Oxygen Reduction Reaction

We investigated the selectivity of N-doped graphene nanoclusters (N-GNCs) toward the oxygen reduction reaction (ORR) using first-principles calculations within the density functional theory. The results show that the maximum electrode potentials (U _Max) for the four-electron (4e^-) pathway are higher than those for the two-electron (2e^-) pathway at almost all of the reaction sites. Thus, the N-GNCs exhibit high selectivity for the 4e^- pathway, that is, the 4e^- reduction proceeds preferentially over the 2e^- reduction. Such high selectivity results in high durability of the catalyst because H₂O₂, which corrodes the electrocatalyst, is not generated. For the doping sites near the edge of the cluster, the value of U _Max greatly depends on the reaction sites. However, for the doping sites around the center of the cluster, the reaction-site dependence is hardly observed. The GNC with a nitrogen atom around the center of the cluster exhibits higher ORR catalytic capability compared with the GNC with a nitrogen atom in the vicinity of the edge. The results also reveal that the water molecule generated by the ORR enhances the selectivity toward the 4e^- pathway because the reaction intermediates are significantly stabilized by water.

Low-Temperature Graphene Growth by Forced Convection of Plasma-Excited Radicals

We developed the forced convection (FC)-PECVD method for the synthesis of graphene, in which a specially designed blowing plasma source is used at moderate gas pressure (1-10 Torr) and the distribution of reactive radicals reaching the substrate surface can be controlled by forced convection. Self-limiting growth of graphene occurs on copper foil, and monolayer graphene growth with a few defects is achieved even at low temperatures (<400 °C). We also demonstrated the enlargement of the growth area using the scalable blowing plasma source. We expect that the FC-PECVD method overcomes the limitations of conventional low-temperature PECVD and provides a breakthrough for the achievement of industrial applications based on graphene.

Properties of Nitrogen/Silicon Doped Vertically Oriented Graphene Produced by ICP CVD Roll-to-Roll Technology

Simultaneous mass production of high quality vertically oriented graphene nanostructures and doping them by using an inductively coupled plasma chemical vapor deposition (ICP CVD) is a technological problem because little is understood about their growth mechanism over enlarged surfaces. We introduce a new method that combines the ICP CVD with roll-to-roll technology to enable the in-situ preparation of vertically oriented graphene by using propane as a precursor gas and nitrogen or silicon as dopants. This new technology enables preparation of vertically oriented graphene with distinct morphology and composition on a moving copper foil substrate at a lower cost. The technological parameters such as deposition time (1–30 min), gas partial pressure, composition of the gas mixture (propane, argon, nitrogen or silane), heating treatment (1–60 min) and temperature (350–500 °C) were varied to reveal the nanostructure growth, the evolution of its morphology and heteroatom’s intercalation by nitrogen or silicon. Unique nanostructures were examined by FE-SEM microscopy, Raman spectroscopy and energy dispersive X-Ray scattering techniques. The undoped and nitrogen- or silicon-doped nanostructures can be prepared with the full area coverage of the copper substrate on industrially manufactured surface defects. Longer deposition time (30 min, 450 °C) causes carbon amorphization and an increased fraction of sp3-hybridized carbon, leading to enlargement of vertically oriented carbonaceous nanostructures and growth of pillars.

Highly Conductive Nitrogen-Doped Graphene Grown on Glass toward Electrochromic Applications

The direct synthesis of low sheet resistance graphene on glass can promote the applications of such intriguing hybrid materials in transparent electronics and energy-related fields. Chemical doping is efficient for tailoring the carrier concentration and the electronic properties of graphene that previously derived from metal substrates. Herein, we report the direct synthesis of 5 in. uniform nitrogen-doped (N-doped) graphene on the quartz glass through a designed low-pressure chemical vapor deposition (LPCVD) route. Ethanol and methylamine were selected respectively as precursor and dopant for acquiring predominantly graphitic-N-doped graphene. We reveal that by a precise control of growth temperature and thus the doping level the sheet resistance of graphene on glass can be as low as one-half that of nondoped graphene, accompanied by relative high crystal quality and transparency. Significantly, we demonstrate that this scalable, 5 in. uniform N-doped graphene glass can serve as excellent electrode materials for fabricating high performance electrochromic smart windows, featured with a much simplified device structure. This work should pave ways for the direct synthesis and application of the new type graphene-based hybrid material.

Bridging the Gap between Reality and Ideal in Chemical Vapor Deposition Growth of Graphene

Graphene, in its ideal form, is a two-dimensional (2D) material consisting of a single layer of carbon atoms arranged in a hexagonal lattice. The richness in morphological, physical, mechanical, and optical properties of ideal graphene has stimulated enormous scientific and industrial interest, since its first exfoliation in 2004. In turn, the production of graphene in a reliable, controllable, and scalable manner has become significantly important to bring us closer to practical applications of graphene. To this end, chemical vapor deposition (CVD) offers tantalizing opportunities for the synthesis of large-area, uniform, and high-quality graphene films. However, quite different from the ideal 2D structure of graphene, in reality, the currently available CVD-grown graphene films are still suffering from intrinsic defective grain boundaries, surface contaminations, and wrinkles, together with low growth rate and the requirement of inevitable transfer. Clearly, a gap still exits between the reality of CVD-derived graphene, especially in industrial production, and ideal graphene with outstanding properties. This Review will emphasize the recent advances and strategies in CVD production of graphene for settling these issues to bridge the giant gap. We begin with brief background information about the synthesis of nanoscale carbon allotropes, followed by the discussion of fundamental growth mechanism and kinetics of CVD growth of graphene. We then discuss the strategies for perfecting the quality of CVD-derived graphene with regard to domain size, cleanness, flatness, growth rate, scalability, and direct growth of graphene on functional substrate. Finally, a perspective on future development in the research relevant to scalable growth of high-quality graphene is presented.

Large-scale synthesis of free-standing N-doped graphene using microwave plasma

Direct assembling of N-graphene, i.e. nitrogen doped graphene, in a controllable manner was achieved using microwave plasmas at atmospheric pressure conditions. The synthesis is accomplished via a single step using ethanol and ammonia as carbon and nitrogen precursors. Tailoring of the high-energy density plasma environment results in a selective synthesis of N-graphene (~0.4% doping level) in a narrow range of externally controlled operational conditions, i.e. precursor and background gas fluxes, plasma reactor design and microwave power. Applying infrared (IR) and ultraviolet (UV) irradiation to the flow of free-standing sheets in the post-plasma zone carries out changes in the percentage of sp², the N doping type and the oxygen functionalities. X-ray photoelectron spectroscopy (XPS) revealed the relative extension of the graphene sheets π-system and the type of nitrogen chemical functions present in the lattice structure. Scanning Electron microscopy (SEM), Transmission Electron microscopy (TEM) and Raman spectroscopy were applied to determine morphological and structural characteristics of the sheets. Optical emission and FT-IR spectroscopy were applied for characterization of the high-energy density plasma environment and outlet gas stream. Electrochemical measurements were also performed to elucidate the electrochemical behavior of NG for supercapacitor applications.

Switching Vertical to Horizontal Graphene Growth Using Faraday Cage-Assisted PECVD Approach for High-Performance Transparent Heating Device

Plasma-enhanced chemical vapor deposition (PECVD) is an applicable route to achieve low-temperature growth of graphene, typically shaped like vertical nanowalls. However, for transparent electronic applications, the rich exposed edges and high specific surface area of vertical graphene (VG) nanowalls can enhance the carrier scattering and light absorption, resulting in high sheet resistance and low transmittance. Thus, the synthesis of laid-down graphene (LG) is imperative. Here, a Faraday cage is designed to switch graphene growth in PECVD from the vertical to the horizontal direction by weakening ion bombardment and shielding electric field. Consequently, laid-down graphene is synthesized on low-softening-point soda-lime glass (6 cm × 10 cm) at ≈580 °C. This is hardly realized through the conventional PECVD or the thermal chemical vapor deposition methods with the necessity of high growth temperature (1000 °C-1600 °C). Laid-down graphene glass has higher transparency, lower sheet resistance, and much improved macroscopic uniformity when compare to its vertical graphene counterpart and it performs better in transparent heating devices. This will inspire the next-generation applications in low-cost transparent electronics.

Chemical Vapor Deposition Growth and Applications of Two-Dimensional Materials and Their Heterostructures

Two-dimensional (2D) materials have attracted increasing research interest because of the abundant choice of materials with diverse and tunable electronic, optical, and chemical properties. Moreover, 2D material based heterostructures combining several individual 2D materials provide unique platforms to create an almost infinite number of materials and show exotic physical phenomena as well as new properties and applications. To achieve these high expectations, methods for the scalable preparation of 2D materials and 2D heterostructures of high quality and low cost must be developed. Chemical vapor deposition (CVD) is a powerful method which may meet the above requirements, and has been extensively used to grow 2D materials and their heterostructures in recent years, despite several challenges remaining. In this review of the challenges in the CVD growth of 2D materials, we highlight recent advances in the controlled growth of single crystal 2D materials, with an emphasis on semiconducting transition metal dichalcogenides. We provide insight into the growth mechanisms of single crystal 2D domains and the key technologies used to realize wafer-scale growth of continuous and homogeneous 2D films which are important for practical applications. Meanwhile, strategies to design and grow various kinds of 2D material based heterostructures are thoroughly discussed. The applications of CVD-grown 2D materials and their heterostructures in electronics, optoelectronics, sensors, flexible devices, and electrocatalysis are also discussed. Finally, we suggest solutions to these challenges and ideas concerning future developments in this emerging field.

N-Doped Graphene with Low Intrinsic Defect Densities via a Solid Source Doping Technique

N-doped graphene with low intrinsic defect densities was obtained by combining a solid source doping technique and chemical vapor deposition (CVD). The solid source for N-doping was embedded into the copper substrate by NH₃ plasma immersion. During the treatment, NH₃ plasma radicals not only flattened the Cu substrate such that the root-mean-square roughness value gradually decreased from 51.9 nm to 15.5 nm but also enhanced the nitrogen content in the Cu substrate. The smooth surface of copper enables good control of graphene growth and the decoupling of height fluctuations and ripple effects, which compensate for the Coulomb scattering by nitrogen incorporation. On the other hand, the nitrogen atoms on the pre-treated Cu surface enable nitrogen incorporation with low defect densities, causing less damage to the graphene structure during the process. Most incorporated nitrogen atoms are found in the pyrrolic configuration, with the nitrogen fraction ranging from 1.64% to 3.05%, while the samples exhibit low defect densities, as revealed by Raman spectroscopy. In the top-gated graphene transistor measurement, N-doped graphene exhibits n-type behavior, and the obtained carrier mobilities are greater than 1100 cm²·V^-1·s^-1. In this study, an efficient and minimally damaging n-doping approach was proposed for graphene nanoelectronic applications.

Towards large-scale in free-standing graphene and N-graphene sheets

One of the greatest challenges in the commercialization of graphene and derivatives is production of high quality material in bulk quantities at low price and in a reproducible manner. The very limited control, or even lack of, over the synthesis process is one of the main problems of conventional approaches. Herein, we present a microwave plasma-enabled scalable route for continuous, large-scale fabrication of free-standing graphene and nitrogen doped graphene sheets. The method's crucial advantage relies on harnessing unique plasma mechanisms to control the material and energy fluxes of the main building units at the atomic scale. By tailoring the high energy density plasma environment and complementarily applying in situ IR and soft UV radiation, a controllable selective synthesis of high quality graphene sheets at 2 mg/min yield with prescribed structural qualities was achieved. Raman spectroscopy, scanning electron microscopy, high resolution transmission electron microscopy, X-ray photoelectron spectroscopy and Near Edge X-ray-absorption fine-structure spectroscopy were used to probe the morphological, chemical and microstructural features of the produced material. The method described here is scalable and show a potential for controllable, large-scale fabrication of other graphene derivatives and promotes microwave plasmas as a competitive, green, and cost-effective alternative to presently used chemical methods.

Controlled Chemical Synthesis in CVD Graphene

Due to the unique properties of graphene, single layer, bilayer or even few layer graphene peeled off from bulk graphite cannot meet the need of practical applications. Large size graphene with quality comparable to mechanically exfoliated graphene has been synthesized by chemical vapor deposition (CVD). The main development and the key issues in controllable chemical vapor deposition of graphene has been briefly discussed in this chapter. Various strategies for graphene layer number and stacking control, large size single crystal graphene domains on copper, graphene direct growth on dielectric substrates, and doping of graphene have been demonstrated. The methods summarized here will provide guidance on how to synthesize other two-dimensional materials beyond graphene.

Efficient Nitrogen Doping of Single-Layer Graphene Accompanied by Negligible Defect Generation for Integration into Hybrid Semiconductor Heterostructures

While doping enables application-specific tailoring of graphene properties, it can also produce high defect densities that degrade the beneficial features. In this work, we report efficient nitrogen doping of ∼11 atom % without virtually inducing new structural defects in the initial, large-area, low defect, and transferred single-layer graphene. To shed light on this remarkable high-doping-low-disorder relationship, a unique experimental strategy consisting of analyzing the changes in doping, strain, and defect density after each important step during the doping procedure was employed. Complementary micro-Raman mapping, X-ray photoelectron spectroscopy, and optical microscopy revealed that effective cleaning of the graphene surface assists efficient nitrogen incorporation accompanied by mild compressive strain resulting in negligible defect formation in the doped graphene lattice. These original results are achieved by separating the growth of graphene from its doping. Moreover, the high doping level occurred simultaneously with the epitaxial growth of n-GaN micro- and nanorods on top of graphene, leading to the flow of higher currents through the graphene/n-GaN rod interface. Our approach can be extended toward integrating graphene into other technologically relevant hybrid semiconductor heterostructures and obtaining an ohmic contact at their interfaces by adjusting the doping level in graphene.

Ultrathin Co–Fe hydroxide nanosheet arrays for improved oxygen evolution during water splitting

The Fe-doping of hierarchical Co hydroxide nanosheet arrays (Co_yFe_1−y(OH)_x NSAs) integrated on a three-dimensional electrode is shown to contribute to both increasing the available surface area and number of active sites.

Direct growth of nanographene at low temperature from carbon black for highly sensitive temperature detectors

Graphene has attracted tremendous research interest owing to its widespread potential applications. However, these applications are partially hampered by the lack of a general method to produce high-quality graphene at low cost. Here, to the best of our knowledge, we use low-cost solid carbon allotropes as the precursor in plasma-enhanced chemical vapor deposition (PECVD) for the first time, and find that the hydrogen plasma and reaction temperature play a crucial role in the process. Hydrogen plasma etches carbon black, and produces graphene crystals in a high-temperature zone. Based on this finding, a modified PECVD technology is developed, which produces transparent conductive nanographene films directly on various substrates at a temperature as low as 600 °C. For application, the closely packed structure of the nanographene film enables a remarkable temperature-dependent behavior of the resistance with a ratio higher than that previously reported, indicating its great potential for usage in highly sensitive temperature detectors.

Graphene Glass from Direct CVD Routes: Production and Applications

Recently, direct chemical vapor deposition (CVD) growth of graphene on various types of glasses has emerged as a promising route to produce graphene glass, with advantages such as tunable quality, excellent film uniformity and potential scalability. Crucial to the performance of this graphene-coated glass is that the outstanding properties of graphene are fully retained for endowing glass with new surface characteristics, making direct-CVD-derived graphene glass versatile enough for developing various applications for daily life. Herein, recent advances in the synthesis of graphene glass, particularly via direct CVD approaches, are presented. Key applications of such graphene materials in transparent conductors, smart windows, simple heating devices, solar-cell electrodes, cell culture medium, and water harvesters are also highlighted.

Controllable Synthesis of Graphene by Plasma-Enhanced Chemical Vapor Deposition and Its Related Applications

Graphene and its derivatives hold a great promise for widespread applications such as field-effect transistors, photovoltaic devices, supercapacitors, and sensors due to excellent properties as well as its atomically thin, transparent, and flexible structure. In order to realize the practical applications, graphene needs to be synthesized in a low-cost, scalable, and controllable manner. Plasma-enhanced chemical vapor deposition (PECVD) is a low-temperature, controllable, and catalyst-free synthesis method suitable for graphene growth and has recently received more attentions. This review summarizes recent advances in the PECVD growth of graphene on different substrates, discusses the growth mechanism and its related applications. Furthermore, the challenges and future development in this field are also discussed.