Few-layer black phosphorus field-effect transistors with reduced current fluctuation

Mechanical Transfer of Black Phosphorus on a Silk Fibroin Substrate: A Viable Method for Photoresponsive and Printable Biomaterials

Despite the technological importance of semiconductor black phosphorus (BP) in materials science, maintaining the stability of BP crystals in organic media and protecting them from environmental oxidation remains challenging. In this study, we present the synthesis of bulk BP and the exploitation of the viscoelastic properties of a regenerated silk fibroin (SF) film as a biocompatible substrate to transfer BP flakes, thereby preventing oxidation. A model based on the flow of polymers revealed that the applied flow-induced stresses exceed the yield stress of the BP aggregate. Raman spectroscopy was used to investigate the exfoliation efficiency as well as the environmental stability of BP transferred on the SF substrate. Notably, BP flakes transferred to the SF substrate demonstrated improved stability when SF was dissolved in a phosphate-buffered saline medium, and in vitro cancer cell viability experiments demonstrate the tumor ablation efficiency under visible to near-infrared (Vis-nIR) radiation. Moreover, the SF and BP-enriched SF (SF/BP) solution was shown to be processable via extrusion-based three-dimensional (3D) printing. Therefore, this work paves the way for a general method for the transferring of BP on natural biodegradable polymers and processing them via 3D printing toward novel functionalities and complex shapes for biomedical purposes.

Black Phosphorus-Based Reusable Biosensor Platforms for the Ultrasensitive Detection of Cortisol in Saliva

A black phosphorus (BP)-based reusable biosensor platform is developed for the repeated and real-time detection of cortisol using antibody-conjugated magnetic particle (MP) structures as a refreshable receptor. Here, we took advantage of the low-noise characteristics of a mechanically exfoliated BP-based field-effect transistor (FET) and hybridized it with anti-cortisol antibody-functionalized MPs to build a highly sensitive cortisol sensor. This strategy allowed us to detect cortisol down to 1 aM in real time and discriminate cortisol from other hormones. In this case, we could easily remove MPs with used antibodies from the surface of a BP-FET and reuse the chip for up to eight repeated sensing operations. Moreover, since our platform could be fabricated using conventional photolithography techniques and the sensor can be reused multiple times, one should be able to significantly reduce operation costs for practical applications. Furthermore, this method could be utilized to detect different hormones with high sensitivity and selectivity in complex environments such as artificial saliva solutions. In this respect, our reusable BP-FET biosensing platform can be a powerful tool for versatile applications such as clinical diagnosis and basic biological analysis by conjugating various antibodies.

Probing charge traps at the 2D semiconductor/dielectric interface

The family of 2-dimensional (2D) semiconductors is a subject of intensive scientific research due to their potential in next-generation electronics. While offering many unique properties like atomic thickness and chemically inert surfaces, the integration of 2D semiconductors with conventional dielectric materials is challenging. The charge traps at the semiconductor/dielectric interface are among many issues to be addressed before these materials can be of industrial relevance. Conventional electrical characterization methods remain inadequate to quantify the traps at the 2D semiconductor/dielectric interface since the estimations of the density of interface traps, Dit, by different techniques may yield more than an order-of-magnitude discrepancy, even when extracted from the same device. Therefore, the challenge to quantify Dit at the 2D semiconductor/dielectric interface is about finding an accurate and reliable measurement method. In this review, we discuss characterization techniques which have been used to study the 2D semiconductor/dielectric interface. Specifically, we discuss the methods based on small-signal AC measurements, subthreshold slope measurements and low-frequency noise measurements. While these approaches were developed for silicon-based technology, 2D semiconductor devices possess a set of unique challenges requiring a careful re-evaluation when using these characterization techniques. We examine the conventional methods based on their efficacy and accuracy in differentiating various types of trap states and provide guidance to find an appropriate method for charge trap analysis and estimation of Dit at 2D semiconductor/dielectric interfaces.

Correlating Optical Microspectroscopy with 4×4 Transfer Matrix Modeling for Characterizing Birefringent Van der Waals Materials

Van der Waals materials exhibit intriguing properties for future electronic and optoelectronic devices. As those unique features strongly depend on the materials' thickness, it has to be accessed precisely for tailoring the performance of a specific device. In this study, a nondestructive and technologically easily implementable approach for accurate thickness determination of birefringent layered materials is introduced by combining optical reflectance measurements with a modular model comprising a 4×4 transfer matrix method and the optical components relevant to light microspectroscopy. This approach is demonstrated being reliable and precise for thickness determination of anisotropic materials like highly oriented pyrolytic graphite and black phosphorus in a range from atomic layers up to more than 100 nm. As a key feature, the method is well-suited even for encapsulated layers outperforming state of-the-art techniques like atomic force microscopy.

Highly Specific Antibiotic Detection on Water-Stable Black Phosphorus Field-Effect Transistors

Two-dimensional (2D) black phosphorus (BP) has been reported to have appealing semiconducting properties as the sensing channel in field-effect transistor (FET) sensors. However, the intrinsic instability of BP in water greatly hinders its application, and little is known about its sensing performance and mechanism in aqueous medium. Herein, a water-stable BP FET sensor for antibiotic detection is reported. A novel surface engineering strategy with Ag⁺ coordination and melamine cyanurate (MC) supramolecular passivation is utilized to enhance the stability and transistor performance of BP. With molecularly imprinted polymers (MIPs) as the detection probe for tetracycline, the BP_Ag(+)/MC/MIPs sensor shows high sensitivity to tetracycline with a detection limit of 7.94 nM and a quick response within 6 s as well as high selectivity against other antibiotics with similar molecular structures. A new sensing mechanism relying on the conjugation effect of the probe structure is proposed, and new knowledge about alkalinity-enhanced and ionic strength-related response from the electrostatic gating effect is given based on the solution chemistry impact study. This work offers an efficient surface engineering strategy to enable the application of 2D BP for antibiotic detection in aqueous medium and presents a new sensing mechanism in chemical analysis by FET sensors.

Fully Depleted Self-Aligned Heterosandwiched Van Der Waals Photodetectors

Room-temperature-operating highly sensitive mid-wavelength infrared (MWIR) photodetectors are utilized in a large number of important applications, including night vision, communications, and optical radar. Many previous studies have demonstrated uncooled MWIR photodetectors using 2D narrow-bandgap semiconductors. To date, most of these works have utilized atomically thin flakes, simple van der Waals (vdW) heterostructures, or atomically thin p-n junctions as absorbers, which have difficulty in meeting the requirements for state-of-the-art MWIR photodetectors with a blackbody response. Here, a fully depleted self-aligned MoS₂ -BP-MoS₂ vdW heterostructure sandwiched between two electrodes is reported. This new type of photodetector exhibits competitive performance, including a high blackbody peak photoresponsivity up to 0.77 A W^-1 and low noise-equivalent power of 2.0 × 10^-14  W Hz^-1/2 , in the MWIR region. A peak specific detectivity of 8.61 × 10¹⁰  cm Hz^1/2  W^-1 under blackbody radiation is achieved at room temperature in the MWIR region. Importantly, the effective detection range of the device is twice that of state-of-the-art MWIR photodetectors. Furthermore, the device presents an ultrafast response of ≈4 µs both in the visible and short-wavelength infrared bands. These results provide an ideal platform for realizing broadband and highly sensitive room-temperature MWIR photodetectors.

Growth of Tellurium Nanobelts on h-BN for p-type Transistors with Ultrahigh Hole Mobility

The lack of stable p-type van der Waals (vdW) semiconductors with high hole mobility severely impedes the step of low-dimensional materials entering the industrial circle. Although p-type black phosphorus (bP) and tellurium (Te) have shown promising hole mobilities, the instability under ambient conditions of bP and relatively low hole mobility of Te remain as daunting issues. Here we report the growth of high-quality Te nanobelts on atomically flat hexagonal boron nitride (h-BN) for high-performance p-type field-effect transistors (FETs). Importantly, the Te-based FET exhibits an ultrahigh hole mobility up to 1370 cm² V^-1 s^-1 at room temperature, that may lay the foundation for the future high-performance p-type 2D FET and metal-oxide-semiconductor (p-MOS) inverter. The vdW h-BN dielectric substrate not only provides an ultra-flat surface without dangling bonds for growth of high-quality Te nanobelts, but also reduces the scattering centers at the interface between the channel material and the dielectric layer, thus resulting in the ultrahigh hole mobility .

Flexible 2D Materials beyond Graphene: Synthesis, Properties, and Applications

2D materials are now at the forefront of state-of-the-art nanotechnologies due to their fascinating properties and unique structures. As expected, low-cost, high-volume, and high-quality 2D materials play an important role in the applications of flexible devices. Although considerable progress has been achieved in the integration of a series of novel 2D materials beyond graphene into flexible devices, a lot remains to be known. At this stage of their development, the key issues concern how to make further improvements to high-performance and scalable-production. Herein, recent progress in the quest to improve the current state of the art for 2D materials beyond graphene is reviewed. Namely, the properties and synthesis techniques of 2D materials are first introduced. Then, both the advantages and challenges of these 2D materials for flexible devices are also highlighted. Finally, important directions for future advancements toward efficient, low-cost, and stable flexible devices are outlined.

Fabrication Technologies for the On-Chip Integration of 2D Materials

With compact footprint, low energy consumption, high scalability, and mass producibility, chip-scale integrated devices are an indispensable part of modern technological change and development. Recent advances in 2D layered materials with their unique structures and distinctive properties have motivated their on-chip integration, yielding a variety of functional devices with superior performance and new features. To realize integrated devices incorporating 2D materials, it requires a diverse range of device fabrication techniques, which are of fundamental importance to achieve good performance and high reproducibility. This paper reviews the state-of-art fabrication techniques for the on-chip integration of 2D materials. First, an overview of the material properties and on-chip applications of 2D materials is provided. Second, different approaches used for integrating 2D materials on chips are comprehensively reviewed, which are categorized into material synthesis, on-chip transfer, film patterning, and property tuning/modification. Third, the methods for integrating 2D van der Waals heterostructures are also discussed and summarized. Finally, the current challenges and future perspectives are highlighted.

Site dependent catalytic water dissociation on an anisotropic buckled black phosphorus surface

Black phosphorus (BP) is unique among 2D materials due to its anisotropic puckered structure. It has been used as a multifunctional catalyst for various purposes. In this study, we performed first principles molecular dynamics simulations to understand the water-splitting reaction on a bi-layer BP surface. We focused on the site-specific aqueous reactivity of the buckled surface. A difference in the axis-dependent reactivity is observed owing to edge defects and exposed sites. Thus, we believe that BP edges, which significantly affect the interfacial water or organic solvent molecules, must exhibit very different edge-dependent reactivity. Experiments suggested the increasing catalytic efficiency of undisturbed BP in the order bulk, few-layered BP, and BP quantum dots. We choose three active sites to investigate the mechanistic details of the OER: the zigzag (ZZ), armchair (AC), and bulk sites. This study will provide insight into the enhanced catalytic activity when more edges are exposed as the active surface. We hope to clarify the reactive pathway in an aqueous solution supported by bi-layer BP by exploring the two different mechanisms for forming the OOH* complex. We explore and report two mechanisms: a simple push-pull reaction for oxygen-oxygen bond formation, the nucleophilic attack by formed OH^- and an attack by a water molecule. The free energy barriers procured for mechanism 1 taking place at the zigzag, armchair, and bulk sites are 7.59 ± 0.33, 9.04 ± 0.01, and 12.80 ± 0.09 kcal mol^-1, respectively. For mechanism 2 the free energy barriers are 7.62 ± 0.11, 9.15 ± 0.16, and 11.63 ± 0.11 kcal mol^-1 for the ZZ, AC, and bulk sites. The interlink between both the mechanisms is established concerning the reported free energy barriers for OOH* formation. The ZZ site is found to lower the activation barrier for the rate-determining step, followed by the AC and bulk.

Visible to Short-Wave Infrared Photodetectors Based on ZrGeTe4 van der Waals Materials

The self-terminated, layered structure of van der Waals materials introduces fundamental advantages for infrared (IR) optoelectronic devices. These are mainly associated with the potential for low noise while maintaining high internal quantum efficiency when reducing IR absorber thicknesses. In this study, we introduce a new van der Waals material candidate, zirconium germanium telluride (ZrGeTe₄), to a growing family of promising IR van der Waals materials. We find the bulk form ZrGeTe₄ has an indirect band edge around ∼0.5 eV, in close agreement with previous theoretical predictions. This material is found to be stable up to 140 °C and shows minimal compositional variation even after >30 days storage in humid air. We demonstrate simple proof-of-concept broad spectrum photodetectors with responsivities above 0.1 AW^-1 across both the visible and short-wave infrared wavelengths. This corresponds to a specific detectivity of ∼10⁹ cm Hz^1/2 W^-1 at λ = 1.4 μm at room temperature. These devices show a linear photoresponse vs illumination intensity relationship over ∼4 orders of magnitude, and fast rise/fall times of ∼50 ns, also verified by a 3 dB roll-off frequency of 5.9 MHz. As the first demonstration of photodetection using ZrGeTe₄, these characteristics measured on a simple proof-of-concept device show the exciting potential of the ZrGeTe₄ for room temperature IR optoelectronic applications.

Atomic layer deposited Al2O3passivation layer for few-layer WS2field effect transistors

We have investigated the effect of an Al₂O₃passivation layer on the performance of few-layer WS₂FETs. While the performance of WS₂FETs is often limited by a substantial decrease in carrier mobility owing to charged impurities and a Schottky barrier between the WS₂and metal electrodes, the introduction of an Al₂O₃overlayer by atomic layer deposition (ALD) suppressed the influence of charged impurities by high-κdielectric screening effect and reduced the effective Schottky barrier height. We argue that n-doping of WS₂, induced by positive fixed charges formed at Al₂O₃/WS₂interface during the ALD process, is responsible for the reduction of the effective Schottky barrier height in the devices. In addition, the Al₂O₃passivation layer protected the device from oxidation, and maintained stable electrical performance of the WS₂FETs over 57 d. Thus, the ALD of Al₂O₃overlayer provides a facile method to enhance the performance of WS₂FETs and to ensure ambient stability.

Aqueous Affinity and Interfacial Dynamics of Anisotropic Buckled Black Phosphorous

The structure of black phosphorous (BP) is similar to the honeycomb arrangement of graphene, but the layered BP is found to be buckled and highly anisotropic. The buckled surface structure affects interfacial molecule mobility and plays a vital role in various nanomaterial applications. The BP is also known for wettability, droplet formation, stability, and hydrophobicity in the aqueous environment. However, there is a gap concerning the structural and dynamical behavior of water molecules, which is available in abundance for other monoatomic and polyatomic two-dimensional (2D) materials. Motivated by the technological importance, we try to bridge the gap by explaining the surface anisotropy-facilitated behavior of water molecules on bilayer BP using classical and first principles molecular dynamics (MD) simulations. From our classical MD study, we find three distinct layers of water molecules. The water layer closest to the interface is L1, followed by L2 and L3/bulk perpendicular to the BP surface. Water molecules in the L1 layer experience some structural disintegration in hydrogen bond (HB) phenomena compared to the bulk. There is a loss of HB donor-acceptor count per water molecule. The average HB count decreases because of an elevated rate of HB formation and deformation; this would affect the dynamic properties in terms of HB lifetime. Therefore, we observe the reduced lifetime of HB in the layer in close contact with BP, which again complements our finding on the diffusion coefficient of water molecules in distinct layers. Water diffuses relatively faster with diffusion coefficient 3.25 × 10^-9 m² s^-1 in L1, followed by L2 and L3. The BP layer shows moderate hydrophobic nature. Our results also indicate the anisotropic behavior as the diffusion along the x-direction is faster than that along the y-direction. The gap in the slope of the x and y components of mean-squared displacement (MSD) complements the pinning effect in an aqueous environment. We observe blue-shifted and red-shifted libration and O-H stretching modes from the calculated power spectra for the L1 water molecules compared to the L2 and L3 molecules from first principles MD simulations. Our analysis may help understand the physical phenomena that occur during the surface wetting of the predroplet formation process observed experimentally.

Orientation Identification of the Black Phosphorus with Different Thickness Based on B2g Mode Using a Micro-Raman Spectroscope under a Nonanalyzer Configuration

As an anisotropic material, the unique optoelectronic properties of black phosphorus are obviously anisotropic. Therefore, non-destructive and fast identification of its crystalline orientation is an important condition for its application in optoelectronics research field. Identifying the crystalline orientation of black phosphorus through A_g¹ and A_g² modes under the parallel polarization has high requirements on the Raman system, while in the nonanalyzer configuration, the crystalline orientation of the thick black phosphorus may not be identified through A_g¹ and A_g² modes. This work proposes a new method to identify the crystalline orientation of black phosphorus of different thicknesses. This method is conducted under the nonanalyzer configuration by B_2g mode. The results show that B_2g mode has a good consistency in the identification of crystalline orientations. In this paper, a theoretical model is established to study the angle-resolved Raman results of B_2g mode. The new method can accurately identify the crystalline orientation with different layers of black phosphorus without misidentification.

Realization of a Buckled Antimonene Monolayer on Ag(111) via Surface Engineering

The degree of buckling of two-dimensional (2D) materials can have a dramatic impact on their corresponding electronic structures. Antimonene (β-phase), a new 2D material with air stability and promising electronic properties, has been engineered to adopt flat or two-heights-buckling geometries by employing different supporting substrates for epitaxial growth. However, studies of the antimonene monolayer with a more buckled configuration are still lacking. Here, we report the synthesis of an antimonene monolayer with a three-heights-buckling configuration overlaid on SbAg₂ surface alloy-covered Ag(111) by molecular beam epitaxy, in which the underlying surface alloy provides interfacial interactions to modulate the structure of the antimonene monolayer. The atomic structure of the synthesized antimonene has been precisely identified through a combination of low-temperature scanning tunneling microscopy and density functional theory calculations. The successful fabrication of a buckled antimonene monolayer could provide a promising way to modulate the structures of 2D materials for future electronic and optoelectronic applications.

Spectrally Selective Mid-Wave Infrared Detection Using Fabry-Pérot Cavity Enhanced Black Phosphorus 2D Photodiodes

Thin two-dimensional (2D) material absorbers have the potential to reduce volume-dependent thermal noise in infrared detectors. However, any reduction in noise must be balanced against lower absorption from the thin layer, which necessitates advanced optical architectures. Such architectures can be particularly effective for applications that require detection only within a specific narrow wavelength range. This study presents a Fabry-Pérot cavity enhanced bP/MoS₂ midwave infrared (MWIR) photodiode. This simple structure enables tunable narrow-band (down to 0.42 μm full width at half-maximum) photodetection in the 2-4 μm range by adjusting the thickness of the Fabry-Pérot cavity resonator. This is achieved while maintaining room-temperature performance metrics comparable to previously reported 2D MWIR detectors. Zero bias specific detectivity and responsivity values of up to 1.7 × 10⁹ cm Hz^1/2 W^-1 and 0.11 A W^-1 at λ = 3.0 μm are measured with a response time of less than 3 ns. These results introduce a promising family of 2D detectors with applications in MWIR spectroscopy.

Single-Molecule Detection of Acetylcholine by Translating the Neuronal Signal to a Single Distinct Electronic Peak

The bioelectric signal deriving from acetylcholine (ACh) plays an important role in regulating body function. Translating neuronal signals to electrical current peaks is a promising approach to achieve rapid detection of the bioelectric signal, but direct nanodevice-based single-molecule detection of the neurotransmitter is hampered by technology. Herein, we propose a neurotransmitter molecular nanogap device composed of atomically thin black phosphorus (BP) electrodes, which could rapidly distinguish the single distinct electronic peak of ACh at low positive bias from other central neurotransmitters. It is the first time that this unique electronic signal has been found, which originates from its quaternary ammonium group, and it has been experimentally verified in the linear sweep voltammetry (LSV) curves measured at 0.3 mV s^-1 in 0.01 M acetycholine chloride aqueous solution. Furthermore, our results suggest that replacing the N atom with a P atom can not only reverse the current signal but also change the signal magnitude in ACh or choline nanoelectronic devices. Importantly, all these appealing properties can even be assembled as components to make these molecules into parallel heterojunctions, making them a promising candidate for applications in forward or backward rectifying diodes. These results provide a theoretical basis for the creative applications of a BP electrode-based nanogap device in the rapid and single-molecule level detection of ACh, an electrochemical understanding for the mechanism of the signal transmission between neurons, and a physical approach to controlling the complex biological signal transduction in organisms. Ultimately, our findings lay the basis for next-generation biomedical solutions to clinical problems in the neurologic field.

Ultrathin High-Quality SnTe Nanoplates for Fabricating Flexible Near-Infrared Photodetectors

This work demonstrates a controlled van der Waals growth of two-dimensional SnTe nanoplates on mica substrates and their applications in flexible near-infrared photodetectors. The growth of nonlayered rock-salt structured SnTe crystals into two-dimensional SnTe nanoplate structures is mainly caused by the two-dimensional nature of the mica surface, which also results in the ultrathin nanoplates obtained (3.6 nm, equivalent to 6 monolayers). Furthermore, it is found that the shape of the SnTe nanoplates can be well engineered by changing their growth temperature due to the competition between the surface energy of the {100} crystallographic plane and that of the {111} plane. As a result of the favorable physical properties of topological crystalline insulators such as metallic surface (high electron mobility) and narrow bandgap, near-infrared photodetectors based on single SnTe nanoplate with the thickness of 3.6 nm present excellent device performance with a responsivity of 698 mA/W, a specific detectivity of 3.89 × 10⁸ jones, and an external quantum efficiency of 88.5% under the illumination of a 980 nm laser at room temperature (300 K) without applying a gate voltage (V_g). Upon increasing the gate voltage from -30 to 30 V, the detector responsivity increases from 2.96 to 723 mA/W and the detector detectivity increases from 2.4 × 10⁶ to 5.3 × 10⁸ jones. Furthermore, upon increasing the thickness of SnTe nanoplate from 3.6 to 35 nm, the detector responsivity increases from 0.698 to 1.468 A/W. The device performance measured after bending for 300 times as well as after bending with different radii presents no obvious degradation, which exhibits the excellent flexibility of the SnTe nanoplate detectors. These results not only contribute to a deep understanding of the mechanisms of the van der Waals growth of nonlayered materials into two-dimensional structure but also demonstrate the immense potential of SnTe nanoplates to be used in flexible near-infrared detectors.

Oxidation-boosted charge trapping in ultra-sensitive van der Waals materials for artificial synaptic features

Exploitation of the oxidation behaviour in an environmentally sensitive semiconductor is significant to modulate its electronic properties and develop unique applications. Here, we demonstrate a native oxidation-inspired InSe field-effect transistor as an artificial synapse in device level that benefits from the boosted charge trapping under ambient conditions. A thin InO_x layer is confirmed under the InSe channel, which can serve as an effective charge trapping layer for information storage. The dynamic characteristic measurement is further performed to reveal the corresponding uniform charge trapping and releasing process, which coincides with its surface-effect-governed carrier fluctuations. As a result, the oxide-decorated InSe device exhibits nonvolatile memory characteristics with flexible programming/erasing operations. Furthermore, an InSe-based artificial synapse is implemented to emulate the essential synaptic functions. The pattern recognition capability of the designed artificial neural network is believed to provide an excellent paradigm for ultra-sensitive van der Waals materials to develop electric-modulated neuromorphic computation architectures.

Developing efficient memory and artificial synaptic systems based on environmentally sensitive van der Waals materials remains a challenge. Here, the authors present a native oxidation-inspired InSe field-effect transistor that benefits from a boosted charge trapping behavior under ambient conditions.

Solution-Processed, Large-Area, Two-Dimensional Crystals of Organic Semiconductors for Field-Effect Transistors and Phototransistors

Organic electronics with π-conjugated organic semiconductors are promising candidates for the next electronics revolution. For the conductive channel, the large-area two-dimensional (2D) crystals of organic semiconductors (2DCOS) serve as useful scaffolds for modern organic electronics, benefiting not only from long-range order and low defect density nature but also from unique charge transport characteristic and photoelectrical properties. Meanwhile, the solution process with advantages of cost-effectiveness and room temperature compatibility is the foundation of high-throughput print electrical devices. Herein, we will give an insightful overview to witness the huge advances in 2DCOS over the past decade. First, the typical influencing factors and state-of-the-art assembly strategies of the solution-process for large-area 2DCOS over sub-millimeter even to wafer size are discussed accompanying rational evaluation. Then, the charge transport characteristics and contact resistance of 2DCOS-based transistors are explored. Following this, beyond single transistors, the p-n junction devices and planar integrated circuits based on 2DCOS are also emphasized. Furthermore, the burgeoning phototransistors (OPTs) based on crystals in the 2D limits are elaborated. Next, we emphasized the unique and enhanced photoelectrical properties based on a hybrid system with other 2D van der Waals solids. Finally, frontier insights and opportunities are proposed, promoting further research in this field.

Native Oxide Seeded Spontaneous Integration of Dielectrics on Exfoliated Black Phosphorus

Two-dimensional (2D) semiconductors have been a central focus for next-generation electronics and optoelectronics owing to their great potential to extend the scaling limits in a silicon transistor. However, due to the lack of surface dangling bonds in most 2D semiconductors, such as graphene and transition metal dichalcogenides (TMDs), the direct growth of the high-κ film on these 2D materials via an atomic layer deposition (ALD) technique often produces dielectrics with poor quality, which hinders their integration in the modern semiconductor industry. Here, we comprehensively investigate the ALD growth of the Al₂O₃ layer on 2D exfoliated black phosphorus (BP). Intriguingly, we found that the 2D BP with "silicon-like" characteristics possesses a native surface oxide layer P_xO_y after air exposure. The P_xO_y-induced surface dangling bonds enable the spontaneous integration of the high-quality Al₂O₃ layer on the BP flake without any pretreatments to functionalize the surface. Additionally, the Al₂O₃ layer could effectively passivate BP to prevent its degradation in ambient conditions, which addresses the most serious problem of the BP material. Moreover, the Al₂O₃-encapsulated BP field-effect transistor (FET) exhibits good electrical transport performance, with a high hole mobility of ∼420 cm² V^-1 s^-1 and electron mobility of ∼80 cm² V^-1 s^-1. Moreover, the high-quality Al₂O₃ layer can also be integrated into the top-gated BP transistor and inverter. Our findings reveal the silicon-like characteristics of BP for the high-κ ALD dielectric growth technology, which promises the seamless integration of 2D BP in the modern semiconductor industry.

Emerging pnictogen-based 2D semiconductors: sensing and electronic devices

Pnictogens are an intensively studied group of monoelemental two-dimensional materials. This group of elements consists of phosphorus, arsenic, antimony, and bismuth. In this group, the elements adopt two different layered structural allotropes, orthorhombic structure with true van der Waals layered interactions and rhombohedral structure, where covalent interactions between layers are also present. The orthorhombic structure is well known for phosphorus and arsenic, and the rhombohedral structure is the most thermodynamically stable allotropic modification of arsenic, antimony, and bismuth. Due to the electronic structure of pnictogen layers and their semiconducting character, these materials have huge application potential for electronic devices such as transistors and sensors including photosensitive devices as well as gas and electrochemical sensors. While photodetection and gas sensing applications are often related to lithography processed materials, chemical sensing proceeds in a liquid environment (either aqueous or non-aqueous) and can be influenced by surface oxidation of these materials. In this review, we explore the current state of pnictogen applications in sensing and electronic devices including transistors, photodetectors, gas sensors, and chemical/electrochemical sensors.

InTeI: a novel wide-bandgap 2D material with desirable stability and highly anisotropic carrier mobility

Recently, stable 2D wide-bandgap semiconductors with excellent electronic and photoelectronic properties have attracted much scientific and technological interest. In this study, we predict a novel InTeI monolayer which has a wide bandgap of 2.735 eV and a anisotropic electron mobility as high as 12 137.80 cm² V^-1 s^-1 based on first-principles calculations. With an exfoliating energy lower than that of monolayer phosphorene, it is feasible to synthesize the 2D InTeI monolayer through mechanical exfoliation from their 3D bulk crystals. Remarkably, the monolayer InTeI achieves the indirect-to-direct bandgap transition under a small in-plane uniaxial strain, while a quasi-direct bandgap can be achieved in the InTeI nanosheets with elevated thickness. The InTeI monolayer and nanosheets have suitable band alignments in the visible-light excitation region. In addition, our theoretical simulations determine that 2D InTeI materials exhibit more excellent oxidation resistance than black phosphorene. The results not only identify a novel class of 2D wide-bandgap semiconductors but also demonstrate their potential applications in nanoelectronics and optoelectronics.

The Rise of 2D Photothermal Materials beyond Graphene for Clean Water Production

Water shortage is one of the most concerning global challenges in the 21st century. Solar-inspired vaporization employing photothermal nanomaterials is considered to be a feasible and green technology for addressing the water challenge by virtue of abundant and clean solar energy. 2D nanomaterials aroused considerable attention in photothermal evaporation-induced water production owing to their large absorption surface, strong absorption in broadband solar spectrum, and efficient photothermal conversion. Herein, the recent progress of 2D nanomaterials-based photothermal evaporation, mainly including emerging Xenes (phosphorene, antimonene, tellurene, and borophene) and binary-enes (MXenes and transition metal dichalcogenides), is reviewed. Then, the optimization strategies for higher evaporation performance are summarized in terms of modulation of the intrinsic photothermal performance of 2D nanomaterials and design of the complete evaporation system. Finally, the challenges and prospective of various kinds of 2D photothermal nanomaterials are discussed in terms of the photothermal performance, stability, environmental influence, and cost. One important principle is that solutions for water challenges should not introduce new environmental and social problems. This Review aims to highlight the role of 2D photothermal nanomaterials in solving water challenges and provides a viable scheme toward the practical use in photothermal materials selection, design, and evaporation systems building.

Noncovalent passivation of supported phosphorene for device applications: from morphology to electronic properties

Simulations suggest efficient routes for the non-covalent passivation of supported phosphorene with alkanes, highlighting strategies to prevent surface degradation phenomena.

A new aptamer/black phosphorous interdigital electrode for malachite green detection

Malachite Green (MG), a cationic triphenylmethane dye, has adverse effects on the immune and reproductive system. Thus, it is essential to develop a rapid, sensitive and high-selective method for determination of MG. Black phosphorus (BP) has high charge-carrier mobility (∼1000 cm² V^-1 s^-1) and high adsorption capacity for cationic dyes (i.e. MG) through both electrostatic and hydrophobic interactions. Thus, it potentially plays as a high-sensitive sensing platform for detecting MG. However, BP degrades within 12 h under humid condition, which limits its applications. To overcome this issue, cysteine (CYS) is used for protecting BP from oxidation and ceasing its degradation. To the best of our knowledge, it is the first time that CYS is used to functionalize BP, and a silicon interdigital electrode is fabricated with the functionalized BP and aptamer. The BP-based interdigital electrode shows a lowest detection limit of 0.3 ng L^-1 toward MG. This work provides a new route to prepare a large scale and selective biosensor for MG monitoring on site in future.

Epitaxial multilayers of alkanes on two-dimensional black phosphorus as passivating and electrically insulating nanostructures

Mechanically exfoliated two-dimensional (2D) black phosphorus (bP) is epitaxially terminated by monolayers and multilayers of tetracosane, a linear alkane, to form a weakly interacting van der Waals heterostructure. Atomic force microscopy (AFM) and computational modelling show that epitaxial domains of alkane chains are ordered in parallel lamellae along the principal crystalline axis of bP, and this order is extended over a few layers above the interface. Epitaxial alkane multilayers delay the oxidation of 2D bP in air by 18 hours, in comparison to 1 hour for bare 2D bP, and act as an electrical insulator, as demonstrated using electrostatic force microscopy. The presented heterostructure is a technologically relevant insulator-semiconductor model system that can open the way to the use of 2D bP in micro- and nanoelectronic, optoelectronic and photonic applications.

Liquefaction of water on the surface of anisotropic two-dimensional atomic layered black phosphorus

The growth and wetting of water on two-dimensional(2D) materials are important to understand the development of 2D material based electronic, optoelectronic, and nanomechanical devices. Here, we visualize the liquefaction processes of water on the surface of graphene, MoS2 and black phosphorus (BP) via optical microscopy. We show that the shape of the water droplets forming on the surface of BP, which is anisotropic, is elliptical. In contrast, droplets are rounded when they form on the surface of graphene or MoS2, which do not possess orthometric anisotropy. Molecular simulations show that the anisotropic liquefaction process of water on the surface of BP is attributed to the different binding energies of H2O molecules on BP along the armchair and zigzag directions. The results not only reveal the anisotropic nature of water liquefaction on the BP surface but also provide a way for fast and nondestructive determination of the crystalline orientation of BP.

Black phosphorus electronics

As the scaling of silicon-based field-effect transistors has approached its physical limits, the search for alternative channel materials for future logic devices has attracted much attention. The discovery of graphene has unveiled another material family with layered structures called two-dimensional (2D) materials. Black phosphorus (BP), the most stable allotrope of phosphorus, was introduced as a new type of 2D material in 2014. Thanks to its high mobility, in-plane anisotropy and direct band gap, BP is considered to be a promising candidate for next-generation electronic and optoelectronic devices. Numerous studies have demonstrated the beneficial effects of introducing BP for device architectures. Herein, we present a review outlining recent progress towards high performance BP-based transistors. This review starts with the fundamental properties of BP, including its crystal structure, bandgap, and direct current (DC) and radio-frequency (RF) characteristics, followed by a detailed description of the modulation and application of those properties, involving anisotropy, functionalization and superlattices. Furthermore, we also discuss device design for high-performance transistors, with particular emphasis on interface engineering and device stability. Finally, we offer our perspective on the future of BP electronics, aiming to benefit colleagues who are interested in this exciting research field.

Reversible Oxidation of Blue Phosphorus Monolayer on Au(111)

Practical applications of two-dimensional (2D) black phosphorus (BP) are limited by its fast degradation under ambient conditions, for which many different mechanisms have been proposed; however, an atomic level understanding of the degradation process is still hindered by the absence of bottom-up methods for the growth of large-scale few-layer black phosphorus. Recent experimental success in the fabrication of single-layer blue phosphorus provides a model system to probe the oxidation mechanism of two-dimensional (2D) phosphorene down to single-layer thicknesses. Here, we report an atomic-scale investigation of the interaction between molecular oxygen and blue phosphorus. The atomic structure of blue phosphorus and the local binding sites of oxygen have been precisely identified using qPlus-based noncontact atomic force microscopy. A combination of low-temperature scanning tunneling microscopy and X-ray photoelectron spectroscopy measurements reveal a thermally reversible oxidation process of blue phosphorus in a pure oxygen atmosphere. Our study clearly demonstrates the essential role of oxygen in the initial oxidation process, and it sheds further light on the fundamental pathways of the degradation mechanism.

Gate-Tunable Tunneling Transistor Based on a Thin Black Phosphorus-SnSe2 Heterostructure

Tunneling field-effect transistors (TFETs) are of considerable interest owing to their capability of low-power operation. Here, we demonstrate a novel type of TFET which is composed of a thin black phosphorus-tin diselenide (BP-SnSe₂) heterostructure. This combination of 2D semiconductor thin sheets enables device operation either as an Esaki diode featuring negative differential resistance (NDR) in the negative gate voltage regime or as a backward diode in the positive gate bias regime. Such tuning possibility is imparted by the fact that only the carrier concentration in the BP component can be effectively modulated by electrostatic gating, while the relatively high carrier concentration in the SnSe₂ sheet renders it insensitive against gating. Scanning photocurrent microscopy maps indicate the presence of a staggered (type II) band alignment at the heterojunction. The temperature-dependent NDR behavior of the devices is explainable by an additional series resistance contribution from the individual BP and SnSe₂ sheets connected in series. Moreover, the backward rectification behavior can be consistently described by the thermionic emission theory, pointing toward the gating-induced formation of a potential barrier at the heterojunction. It furthermore turned out that for effective Esaki diode operation, care has to be taken to avoid the formation of positive charges trapped in the alumina passivation layer.

The impact of hexagonal boron nitride encapsulation on the structural and vibrational properties of few layer black phosphorus

The encapsulation of two-dimensional layered materials such as black phosphorus is of paramount importance for their stability in air. However, the encapsulation poses several questions, namely, how it affects, via the weak van der Waals forces, the properties of the black phosphorus and whether these properties can be tuned on demand. Prompted by these questions, we have investigated the impact of hexagonal boron nitride encapsulation on the structural and vibrational properties of few layer black phosphorus, using a first-principles method in the framework of density functional theory. We demonstrate that the encapsulation with hexagonal boron nitride imposes biaxial strain on the black phosphorus material, flattening its puckered structure, by decreasing the thickness of the layers via the increase of the puckered angle and the intra-layer P-P bonds. This work exemplifies the evolution of structural parameters in layered materials after the encapsulation process. We find that after encapsulation, phosphorene (single layer black phosphorous) contracts by 1.1% in the armchair direction and stretches by 1.3% in the zigzag direction, whereas few layer black phosphorus mainly expands by up to 3% in the armchair direction. However, these relatively small strains induced by the hexagonal BN, lead to significant changes in the vibrational properties of black phosphorus, with the redshifts of up to 10 cm^-1 of the high frequency optical mode A _g ¹. In general, structural changes induced by the encapsulation process open the door to substrate controlled strain engineering in two-dimensional crystals.

Wet Chemical Method for Black Phosphorus Thinning and Passivation

Layered black phosphorus (BP) has been expected to be a promising material for future electronic and optoelectronic applications since its discovery. However, the difficulty in mass fabricating layered air-stable BP severely obstructs its potential industry applications. Here, we report a new BP chemical modification method to implement all-solution-based mass production of layered air-stable BP. This method uses the combination of two electron-deficient reagents 2,2,6,6-tetramethylpiperidinyl- N-oxyl (TEMPO) and triphenylcarbenium tetrafluorobor ([Ph₃C]BF₄) to accomplish thinning and/or passivation of BP in organic solvent. The field-effect transistor and photodetection devices constructed from the chemically modified BP flakes exhibit enhanced performances with environmental stability up to 4 months. A proof-of-concept BP thin-film transistor fabricated through the all-solution-based exfoliation and modification displays an air-stable and a typical p-type transistor behavior. This all-solution-based method improves the prospects of BP for industry applications.

Palladium Diselenide Long-Wavelength Infrared Photodetector with High Sensitivity and Stability

A long-wavelength infrared photodetector based on two-dimensional materials working at room temperature would have wide applications in many aspects in remote sensing, thermal imaging, biomedical optics, and medical imaging. However, sub-bandgap light detection in graphene and black phosphorus has been a long-standing scientific challenge because of their low photoresponsivity, instability in the air, and high dark current. In this study, we report a highly sensitive, air-stable, and operable long-wavelength infrared photodetector at room temperature based on PdSe₂ phototransistors and their heterostructure. A high photoresponsivity of ∼42.1 AW^-1 (at 10.6 μm) was demonstrated, which is an order of magnitude higher than the current record of platinum diselenide. Moreover, the dark current and noise power density were suppressed effectively by fabricating a van der Waals heterostructure. This work fundamentally contributes to establishing long-wavelength infrared detection by PdSe₂ at the forefront of long-IR two-dimensional-materials-based photonics.

Black Phosphorus Nano-Polarizer with High Extinction Ratio in Visible and Near-Infrared Regime

We study computationally the design of a high extinction ratio nano polarizer based on black phosphorus (BP). A scattering-matrix calculation method is applied to compute the overall polarization extinction ratio along two orthogonal directions. The results reveal that, with a resonance cavity of SiO₂, both BP/SiO2/Si and h-BN/BP/SiO2/Si configurations can build a linear polarizer with extinction ratio higher than 16 dB at a polarized wavelength in the range of 400 nm–900 nm. The polarization wavelength is tunable by adjusting the thickness of the BP layer while the thicknesses of the isotrocpic layers are in charge of extinction ratios. The additional top layer of h-BN was used to prevent BP degradation from oxidation and strengthens the practical applications of BP polarizer. The study shows that the BP/SiO2/Si structure, with a silicon compatible and easy-to-realize method, is a valuable solution when designing polarization functional module in integrated photonics and optical communications circuits.

Coulomb scattering mechanism transition in 2D layered MoTe2: effect of high-κ passivation and Schottky barrier height

Clean interface and low contact resistance are crucial requirements in two-dimensional (2D) materials to preserve their intrinsic carrier mobility. However, atomically thin 2D materials are sensitive to undesired Coulomb scatterers such as surface/interface adsorbates, metal-to-semiconductor Schottky barrier (SB), and ionic charges in the gate oxides, which often limits the understanding of the charge scattering mechanism in 2D electronic systems. Here, we present the effects of hafnium dioxide (HfO₂) high-κ passivation and SB height on the low-frequency (LF) noise characteristics of multilayer molybdenum ditelluride (MoTe₂) transistors. The passivated HfO₂ passivation layer significantly suppresses the surface reaction and enhances dielectric screening effect, resulting in an excess electron n-doping, zero hysteresis, and substantial improvement in carrier mobility. After the high-κ HfO₂ passivation, the obtained LF noise data appropriately demonstrates the transition of the Coulomb scattering mechanism from the SB contact to the channel, revealing the significant SB noise contribution to the 1/f noise. The substantial excess LF noise in the subthreshold regime is mainly attributed to the excess metal-to-MoTe₂ SB noise and is fully eliminated at the high drain bias regime. This study provides a clear insight into the origin of electronic signal perturbation in 2D electronic systems.

Temperature-Dependent Transport in Ultrathin Black Phosphorus Field-Effect Transistors

We studied the temperature-dependent transport properties of ultrathin black phosphorus (BP). We present measurements of BP Schottky barrier (SB) metal-oxide-semiconductor field-effect-transistors (MOSFETs) with various channel lengths, constructed from a single BP sample with nanoscale uniformity in thickness and width. The electrical characterization reveals a reversal in the temperature dependence of drain current as a function of gate voltage. This reversal indicates a transition in the charge conduction limiting mechanisms as the device is swept from the off-state into the on-state. In the off-state, charge transport is limited by thermionic emission over the energy barriers at the source/drain SB contacts, and drain current increases with temperature. In the on-state, carriers can easily tunnel across the SB at the contacts, and charge transport is limited by scattering in the channel. As a result, drain current decreases with temperature in the on-state, as scattering increases with temperature. Using Landauer transport theory, we derive a closed-form expression for thermionic emission current in SB-MOSFETs with two-dimensional channels. We use this expression to extract the SB height at metal contact interface with BP and demonstrate the impact of scattering on the extraction. We then use a comprehensive BP SB-MOSFET model to analyze on-state current as a function of temperature and demonstrate the effects of charged impurity and phonon scattering on the transport properties of BP through extractions of mobility at fixed carrier density.

Interface engineering for a stable chemical structure of oxidized-black phosphorus via self-reduction in AlOx atomic layer deposition

We evaluated the change in the chemical structure between dielectrics (AlOx and HfOx) grown by atomic layer deposition (ALD) and oxidized black phosphorus (BP), as a function of air exposure time. Chemical and structural analyses of the oxidized phosphorus species (PxOy) were performed using atomic force microscopy, X-ray photoelectron spectroscopy, scanning electron microscopy, transmission electron microscopy, first-principles density functional theory calculations, and the electrical characteristics of field-effect transistors (FETs). Based on the combined experiments and theoretical investigations, we clearly show that oxidized phosphorus species (PxOy, until exposed for 24 h) are significantly decreased (self-reduction) during the ALD of AlOx. In particular, the field effect characteristics of a FET device based on Al2O3/AlOx/oxidized BP improved significantly with enhanced electrical properties, a mobility of ∼253 cm2 V-1 s-1 and an on-off ratio of ∼105, compared to those of HfO2/HfOx/oxidized BP with a mobility of ∼97 cm2 V-1 s-1 and an on-off ratio of ∼103-104. These distinct differences result from a significantly decreased interface trap density (Dit ∼ 1011 cm-2 eV-1) and subthreshold gate swing (SS ∼ 270 mV dec-1) in the BP device caused by the formation of stable energy states at the AlOx/oxidized BP interface, even with BP oxidized by air exposure.

High Mobilities in Layered InSe Transistors with Indium-Encapsulation-Induced Surface Charge Doping

Tunability and stability in the electrical properties of 2D semiconductors pave the way for their practical applications in logic devices. A robust layered indium selenide (InSe) field-effect transistor (FET) with superior controlled stability is demonstrated by depositing an indium (In) doping layer. The optimized InSe FETs deliver an unprecedented high electron mobility up to 3700 cm² V^-1 s^-1 at room temperature, which can be retained with 60% after 1 month. Further insight into the evolution of the position of the Fermi level and the microscopic device structure with different In thicknesses demonstrates an enhanced electron-doping behavior at the In/InSe interface. Furthermore, the contact resistance is also improved through the In insertion between InSe and Au electrodes, which coincides with the analysis of the low-frequency noise. The carrier fluctuation is attributed to the dominance of the phonon scattering events, which agrees with the observation of the temperature-dependent mobility. Finally, the flexible functionalities of the logic-circuit applications, for instance, inverter and not-and (NAND)/not-or (NOR) gates, are determined with these surface-doping InSe FETs, which establish a paradigm for 2D-based materials to overcome the bottleneck in the development of electronic devices.

Adsorption of Transition Metals on Black Phosphorene: a First-Principles Study

Black phosphorene is a novel two-dimensional material which has unique properties and wide applications. Using first-principles calculations, we investigated the adsorption behavior of 12 different transition metals (TMs; Fe, Co, Ni, Cu, Ru, Rh, Pd, Ag, Os, Ir, Pt, and Au) on phosphorene. Our results showed that all of the adsorption systems have a large binding energy. The Fe-, Co-, and Au-phosphorene systems display magnetic states with magnetic moments of 2, 1, and 0.96 μ_B, respectively, which means that these systems are magnetic semiconductors. Adsorption of oxygen molecules on TM-phosphorene was also investigated. Interestingly, all the O₂-(TM-phosphorene) systems, except O₂-(Pd-phosphorene), can elongate the O-O bond, which is critical to their application as catalysts in the oxidation of CO. We also found that the adsorption of O₂ molecules enables the O₂-(Fe-, Ni-, Cu-, Ir-, Rh-, Ag-, and Au-phosphorene) systems to become magnetic semiconductors, and it allows O₂-(Co-phosphorene) to display half-metallic state. Our results are expected to have important implications for phosphorene-based catalysis and spintronics.

Scalable Patterning of Encapsulated Black Phosphorus

Atomically thin black phosphorus (BP) has attracted considerable interest due to its unique properties, such as an infrared band gap that depends on the number of layers and excellent electronic transport characteristics. This material is known to be sensitive to light and oxygen and degrades in air unless protected with an encapsulation barrier, limiting its exploitation in electrical devices. We present a new scalable technique for nanopatterning few layered BP by direct electron beam exposure of encapsulated crystals, achieving a spatial resolution down to 6 nm. By encapsulating the BP with single layer graphene or hexagonal boron nitride (hBN), we show that a focused electron probe can be used to produce controllable local oxidation of BP through nanometre size defects created in the encapsulation layer by the electron impact. We have tested the approach in the scanning transmission electron microscope (STEM) and using industry standard electron beam lithography (EBL). Etched regions of the BP are stabilized by a thin passivation layer and demonstrate typical insulating behavior as measured at 300 and 4.3 K. This new scalable approach to nanopatterning of thin air sensitive crystals has the potential to facilitate their wider use for a variety of sensing and electronics applications.

Fluorination-Enhanced Ambient Stability and Electronic Tolerance of Black Phosphorus Quantum Dots

The environmental instability and uneliminable electronic trap states in black phosphorus quantum dots (BPQDs) limit the optoelectronics and related applications of BPQDs. Here, fluorinated BPQDs (F-BPQDs) are successfully synthesized by using a facile electrochemical exfoliation and synchronous fluorination method. The F-BPQDs exhibit robust ambient stability and limited fluorination capability, showing a nonstoichiometric fluorination degree (DF) maximum of ≈0.68. Density functional theory calculations confirm that due to the edge etching effect of fluorine adatoms, the simulated F-BPQDs become structurally unstable when DF surpasses the limit. Furthermore, the trap states of BPQDs can be effectively eliminated via fluorination to obtain a coordination number of 3 or 5 for fluorinated and unfluorinated phosphorus atoms. The results reveal that the air-stable F-BPQDs exhibit fluorine defect-enhanced electronic tolerance, which is crucial for nanophotonics and nanoelectronics applications.

Monolayer atomic crystal molecular superlattices

Artificial superlattices, based on van der Waals heterostructures of two-dimensional atomic crystals such as graphene or molybdenum disulfide, offer technological opportunities beyond the reach of existing materials. Typical strategies for creating such artificial superlattices rely on arduous layer-by-layer exfoliation and restacking, with limited yield and reproducibility. The bottom-up approach of using chemical-vapour deposition produces high-quality heterostructures but becomes increasingly difficult for high-order superlattices. The intercalation of selected two-dimensional atomic crystals with alkali metal ions offers an alternative way to superlattice structures, but these usually have poor stability and seriously altered electronic properties. Here we report an electrochemical molecular intercalation approach to a new class of stable superlattices in which monolayer atomic crystals alternate with molecular layers. Using black phosphorus as a model system, we show that intercalation with cetyl-trimethylammonium bromide produces monolayer phosphorene molecular superlattices in which the interlayer distance is more than double that in black phosphorus, effectively isolating the phosphorene monolayers. Electrical transport studies of transistors fabricated from the monolayer phosphorene molecular superlattice show an on/off current ratio exceeding 10⁷, along with excellent mobility and superior stability. We further show that several different two-dimensional atomic crystals, such as molybdenum disulfide and tungsten diselenide, can be intercalated with quaternary ammonium molecules of varying sizes and symmetries to produce a broad class of superlattices with tailored molecular structures, interlayer distances, phase compositions, electronic and optical properties. These studies define a versatile material platform for fundamental studies and potential technological applications.

Enhanced Performance of Field-Effect Transistors Based on Black Phosphorus Channels Reduced by Galvanic Corrosion of Al Overlayers

Two-dimensional (2D)-layered semiconducting materials with considerable band gaps are emerging as a new class of materials applicable to next-generation devices. Particularly, black phosphorus (BP) is considered to be very promising for next-generation 2D electrical and optical devices because of its high carrier mobility of 200-1000 cm² V^-1 s^-1 and large on/off ratio of 10⁴ to 10⁵ in field-effect transistors (FETs). However, its environmental instability in air requires fabrication processes in a glovebox filled with nitrogen or argon gas followed by encapsulation, passivation, and chemical functionalization of BP. Here, we report a new method for reduction of BP-channel devices fabricated without the use of a glovebox by galvanic corrosion of an Al overlayer. The reduction of BP induced by an anodic oxidation of Al overlayer is demonstrated through surface characterization of BP using atomic force microscopy, Raman spectroscopy, and X-ray photoemission spectroscopy along with electrical measurement of a BP-channel FET. After the deposition of an Al overlayer, the FET device shows a significantly enhanced performance, including restoration of ambipolar transport, high carrier mobility of 220 cm² V^-1 s^-1, low subthreshold swing of 0.73 V/decade, and low interface trap density of 7.8 × 10¹¹ cm^-2 eV^-1. These improvements are attributed to both the reduction of the BP channel and the formation of an Al₂O₃ interfacial layer resulting in a high- k screening effect. Moreover, ambipolar behavior of our BP-channel FET device combined with charge-trap behavior can be utilized for implementing reconfigurable memory and neuromorphic computing applications. Our study offers a simple device fabrication process for BP-channel FETs with high performance using galvanic oxidation of Al overlayers.