Controlling many-body states by the electric-field effect in a two-dimensional material

Prediction of superconductivity in a series of tetragonal transition metal dichalcogenides

Transition metal dichalcogenides (TMDCs) represent a well-known material family with diverse structural phases and rich electronic properties; they are thus an ideal platform for studying the emergence and exotic phenomenon of superconductivity (SC). Herein, we propose the existence of tetragonal TMDCs with a distorted Lieb (dLieb) lattice structure and the stabilized transition metal disulfides (MS2), including dLieb-ZrS2, dLieb-NbS2, dLieb-MnS2, dLieb-FeS2, dLieb-ReS2, and dLieb-OsS2. Except for semiconducting dLieb-ZrS2 and magnetic dLieb-MnS2, the rest of metallic dLieb-MS2 was found to exhibit intrinsic SC with the transition temperature (TC) ranging from ∼5.4 to ∼13.0 K. The TC of dLieb-ReS2 and dLieb-OsS2 exceeded 10 K and was higher than that of the intrinsic SC in the known metallic TMDCs, which is attributed to the significant phonon-softening enhanced electron-phonon coupling strength. Different from the Ising spin-orbit coupling (SOC) effect in existing non-centrosymmetric TMDCs, the non-magnetic dLieb-MS2 monolayers exhibit the Dresselhaus SOC effect, which is featured by in-plane spin orientations and will give rise to the topological SC under proper conditions. In addition to enriching the structural phases of TMDCs, our work predicts a series of SC candidates with high intrinsic TC and topological non-triviality used for fault-tolerant quantum computation.

Beyond Conventional Charge Density Wave for Strongly Enhanced 2D Superconductivity in 1H-TaS2 Superlattices

Noncentrosymmetric transition metal dichalcogenide (TMD) monolayers offer a fertile platform for exploring unconventional Ising superconductivity (SC) and charge density waves (CDWs). However, the vulnerability of isolated monolayers to structural disorder and environmental oxidation often degrade their electronic coherence. Herein, an alternative approach is reported for fabricating stable and intrinsic monolayers of 1H-TaS2 sandwiched between SnS blocks in a (SnS)1.15TaS2 van der Waals (vdW) superlattice. The SnS block layers not only decouple individual 1H-TaS2 sublayers to endow them with monolayer-like electronic characteristics, but also protect the 1H-TaS2 layers from electronic degradation. The results reveal the characteristic 3 × 3 CDW order in 1H-TaS2 sublayers associated with electronic rearrangement in the low-lying sulfur p band, which uncovers a previously undiscovered CDW mechanism rather than the conventional Fermi surface-related framework. Additionally, the (SnS)1.15TaS2 superlattice exhibits a strongly enhanced Ising-like SC with a layer-independent Tc of ≈3.0 K, comparable to that of the isolated monolayer 1H-TaS2 sample, presumably attributed to their monolayer-like characteristics and retained Fermi states. These results provide new insights into the long-debated CDW order and enhanced SC of monolayer 1H-TaS2, establishing bulk vdW superlattices as promising platforms for investigating exotic collective quantum phases in the 2D limit.

General synthesis of ionic-electronic coupled two-dimensional materials

Two-dimensional (2D) AMX2 compounds are a family of mixed ionic and electronic conductors (where A is a monovalent metal ion, M is a trivalent metal, and X is a chalcogen) that offer a fascinating platform to explore intrinsic coupled ionic-electronic properties. However, the synthesis of 2D AMX2 compounds remains challenging due to their multielement characteristics and various by-products. Here, we report a separated-precursor-supply chemical vapor deposition strategy to manipulate the chemical reactions and evaporation of precursors, facilitating the successful fabrication of 20 types of 2D AMX2 flakes. Notably, a 10.4 nm-thick AgCrS2 flake shows superionic behavior at room temperature, with an ionic conductivity of 192.8 mS/cm. Room temperature ferroelectricity and reconfigurable positive/negative photovoltaic currents have been observed in CuScS2 flakes. This study not only provides an effective approach for the synthesis of multielement 2D materials with unique properties, but also lays the foundation for the exploration of 2D AMX2 compounds in electronic, optoelectronic, and neuromorphic devices.

Strain-Induced Ferromagnetism in Monolayer T″-Phase VTe2: Unveiling Magnetic States and Anisotropy for Spintronics Advancement

Two-dimensional (2D) ferromagnets have attracted significant interest for their potential in spintronic device miniaturization, especially since the discovery of ferromagnetic ordering in monolayer materials such as CrI3 and Fe3GeTe2 in 2017. This study presents a detailed investigation into the effects of the Hubbard U parameter, biaxial strain, and structural distortions on the magnetic characteristics of T″-phase VTe2. We demonstrate that setting the Hubbard U to 0 eV provides an accurate representation of the observed structural, magnetic, and electronic features for both bulk and monolayer T″-phase VTe2. The application of strain reveals two distinct ferromagnetic states in the monolayer T″-phase VTe2, each characterized by minor structural differences, but notably different magnetic moments. The T″-1 state, with reduced magnetic moments, emerges under compressive strain, while the T″-2 state, featuring increased magnetic moments, develops under tensile strain. Our analysis also compares the magnetic anisotropy between the T and T″ phases of VTe2, highlighting that the periodic lattice distortion in the T″-phase induces an in-plane anisotropy, which makes it a material with an easy-axis of magnetization. Monte Carlo simulations corroborate our findings, indicating a high Curie temperature of approximately 191 K for the T″-phase VTe2. Our research not only sheds light on the critical aspects of the VTe2 system but also suggests new pathways for enhancing low-dimensional magnetism, contributing to the advancement of spintronics and straintronics.

Phase Engineering of Nanomaterials: Transition Metal Dichalcogenides

Crystal phase, a critical structural characteristic beyond the morphology, size, dimension, facet, etc., determines the physicochemical properties of nanomaterials. As a group of layered nanomaterials with polymorphs, transition metal dichalcogenides (TMDs) have attracted intensive research attention due to their phase-dependent properties. Therefore, great efforts have been devoted to the phase engineering of TMDs to synthesize TMDs with controlled phases, especially unconventional/metastable phases, for various applications in electronics, optoelectronics, catalysis, biomedicine, energy storage and conversion, and ferroelectrics. Considering the significant progress in the synthesis and applications of TMDs, we believe that a comprehensive review on the phase engineering of TMDs is critical to promote their fundamental studies and practical applications. This Review aims to provide a comprehensive introduction and discussion on the crystal structures, synthetic strategies, and phase-dependent properties and applications of TMDs. Finally, our perspectives on the challenges and opportunities in phase engineering of TMDs will also be discussed.

Wafer scale growth of single crystal two-dimensional van der Waals materials

Two-dimensional (2D) van der Waals (vdW) materials, including graphene, hexagonal boron nitride (hBN), and metal dichalcogenides (MCs), form the basis of modern electronics and optoelectronics due to their unique electronic structure, chemical activity, and mechanical strength. Despite many proof-of-concept demonstrations so far, to fully realize their large-scale practical applications, especially in devices, wafer-scale single crystal atomically thin highly uniform films are indispensable. In this minireview, we present an overview on the strategies and highlight recent significant advances toward the synthesis of wafer-scale single crystal graphene, hBN, and MC 2D thin films. Currently, there are five distinct routes to synthesize wafer-scale single crystal 2D vdW thin films: (i) nucleation-controlled growth by suppressing the nucleation density, (ii) unidirectional alignment of multiple epitaxial nuclei and their seamless coalescence, (iii) self-collimation of randomly oriented grains on a molten metal, (iv) surface diffusion and epitaxial self-planarization and (v) seed-mediated 2D vertical epitaxy. Finally, the challenges that need to be addressed in future studies have also been described.

Structural approach to charge density waves in low-dimensional systems: electronic instability and chemical bonding

The charge density wave (CDW) instability, usually occurring in low-dimensional metals, has been a topic of interest for longtime. However, some very fundamental aspects of the mechanism remain unclear. Recently, a plethora of new CDW materials, a substantial fraction of which is two-dimensional or even three-dimensional, has been prepared and characterised as bulk and/or single-layers. As a result, the need for revisiting the primary mechanism of the instability, based on the electron-hole instability established more than 50 years ago for quasi-one-dimensional (quasi-1D) conductors, has clearly emerged. In this work, we consider a large number of CDW materials to revisit the main concepts used in understanding the CDW instability, and emphasise the key role of the momentum dependent electron-phonon coupling in linking electronic and structural degrees of freedom. We argue that for quasi-1D systems, earlier weak coupling theories work appropriately and the energy gain due to the CDW and the concomitant periodic lattice distortion (PLD) remains primarily due to a Fermi surface nesting mechanism. However, for materials with higher dimensionality, intermediate and strong coupling regimes are generally at work and the modification of the chemical bonding network by the PLD is at the heart of the instability. We emphasise the need for a microscopic approach blending condensed matter physics concepts and state-of-the-art first-principles calculations with quite fundamental chemical bonding ideas in understanding the CDW phenomenon in these materials.

Enantiomorphic kagome bands in a two-dimensional covalent organic framework with non-trivial magnetic and topological properties

The kagome lattice is one of the most intriguing topics to study. It has a frustrated flat band touching a set of Dirac bands and can possess various promising properties, such as ferromagnetism, superconductivity, and a non-trivial topology. Covalent organic frameworks (COFs) are a rare type of inorganic material, however, they can provide a platform for generating certain required lattices. Based on first-principles density functional theory calculations, we show that a newly synthesized two-dimensional COF named COF-SH has novel enantiomorphic kagome bands, which include two sets of flat bands touching the Dirac bands around the Fermi level. The Bloch wave of the flat-valence band at the K-point shows the kagome nature of the phase interference. Under charge doping, the COF-SH exhibits a ferromagnetic ground state. Moreover, when COF-SH is doped with iodine atoms, a sizable gap in the system is opened between the flat bands and the Dirac bands due to the spin-orbit coupling (SOC) effect. Meanwhile, the spin degeneracy is lifted since the organic layer loses electrons due to the oxidizing property of iodine. In addition, our tight-binding analysis with the SOC effect shows that the flat valence band separates from the Dirac bands and holds a nonzero Chern number. Consequently, this I-doped COF can give rise to a quantum anomalous Hall effect.

Selective oxidation of p-phenylenediamine for blood glucose detection enabled by Se-vacancy-rich TiSe2-x@Au nanozyme

Nanozymes with enzyme-like characteristics have drawn wide interest but the catalytic activity and substrate selectivity of nanozymes still need improvement. Herein, Se-vacancy-rich TiSe2-x@Au nanocomposites are designed and demonstrated as nanozymes. The TiSe2-x@Au nanocomposites show excellent peroxidase-like activity and the chromogenic substrate p-phenylenediamine (PPD) can be selectively oxidized to compounds that exhibit an absorption peak at 413 nm that differs from that of self-oxidation or generally oxidized species, suggesting high catalytic activity and strong substrate selectivity. Theoretical calculations reveal that the PPD adsorption geometry at Se vacancies with an adsorption energy of -3.00 eV shows a unique spatial configuration and charge distribution, thereby inhibiting the free reaction and promoting both the activity and selectivity in PPD oxidation. The TiSe2-x@Au colorimetric system exhibits a wide linear range of 0.015 mM-0.6 mM and a low detection limit of 0.0037 mM in the detection of glucose. The blood glucose detection performance for human serum samples is comparable to that of a commercial glucose meter in the hospital (relative standard deviation < 6%). Our findings demonstrate a new strategy for rapid and accurate detection of blood glucose and our results provide insights into the future design of nanozymes.

Chemical Modulation of Metal-Insulator Transition toward Multifunctional Applications in Vanadium Dioxide Nanostructures

The metal-insulator transition (MIT) of vanadium dioxide (VO2 ) has been of great interest in materials science for both fundamental understanding of strongly correlated physics and a wide range of applications in optics, thermotics, spintronics, and electronics. Due to the merits of chemical interaction with accessibility, versatility, and tunability, chemical modification provides a new perspective to regulate the MIT of VO2 , endowing VO2 with exciting properties and improved functionalities. In the past few years, plenty of efforts have been devoted to exploring innovative chemical approaches for the synthesis and MIT modulation of VO2 nanostructures, greatly contributing to the understanding of electronic correlations and development of MIT-driven functionalities. Here, this comprehensive review summarizes the recent achievements in chemical synthesis of VO2 and its MIT modulation involving hydrogen incorporation, composition engineering, surface modification, and electrochemical gating. The newly appearing phenomena, mechanism of electronic correlation, and structural instability are discussed. Furthermore, progresses related to MIT-driven applications are presented, such as the smart window, optoelectronic detector, thermal microactuator, thermal radiation coating, spintronic device, memristive, and neuromorphic device. Finally, the challenges and prospects in future research of chemical modulation and functional applications of VO2 MIT are also provided.

Phase Engineering of 2D Materials

Polymorphic 2D materials allow structural and electronic phase engineering, which can be used to realize energy-efficient, cost-effective, and scalable device applications. The phase engineering covers not only conventional structural and metal-insulator transitions but also magnetic states, strongly correlated band structures, and topological phases in rich 2D materials. The methods used for the local phase engineering of 2D materials include various optical, geometrical, and chemical processes as well as traditional thermodynamic approaches. In this Review, we survey the precise manipulation of local phases and phase patterning of 2D materials, particularly with ideal and versatile phase interfaces for electronic and energy device applications. Polymorphic 2D materials and diverse quantum materials with their layered, vertical, and lateral geometries are discussed with an emphasis on the role and use of their phase interfaces. Various phase interfaces have demonstrated superior and unique performance in electronic and energy devices. The phase patterning leads to novel homo- and heterojunction structures of 2D materials with low-dimensional phase boundaries, which highlights their potential for technological breakthroughs in future electronic, quantum, and energy devices. Accordingly, we encourage researchers to investigate and exploit phase patterning in emerging 2D materials.

Interplay of the charge density wave transition with topological and superconducting properties

Exotic phenomena due to the interplay of different quantum orders have been observed and the study of these phenomena has emerged as a new frontier in condensed matter research, especially in the two-dimensional limit. Here, we report the coexistence of charge density waves (CDWs), superconductivity, and nontrivial topology in monolayer 1H-MSe2 (M = Nb, Ta) triggered by momentum-dependent electron-phonon coupling through electron doping. At a critical electron doping concentration, new 2 × 2 CDW phases emerge with nontrivial topology, Dirac cones, and van Hove singularities. Interestingly, these 2 × 2 CDW phases are also superconducting. Our findings not only reveal a route towards realizing nontrivial electronic characters by CDW engineering, but also provide an exciting platform to modulate different quantum states at the confluence of CDWs, superconductivity, nontrivial topology, and electron-phonon coupling.

First-principles studies on the structural, electronic, and optical properties of 2D transition metal dichalcogenide (TMDC) and Janus TMDCs heterobilayers

Van der Waals heterobilayers formed by vertically stacked two-dimensional materials could be a viable candidate for optoelectronics. This study carried out first-principles calculations to study the geometrical, electronic and optical properties of heterobilayers consisting transition metal dichalcogenide (TMDC) SnSe2and Janus TMDCs ZrSSe and SnSSe. Eight possible configurations SeSnSe-SSnSe (I), SeSnSe-SeSnS (II), SeSnSe-SZrSe (III), SeSnSe-SeZrS (IV), SSnSe-SZrSe (V), SSnSe-SeZrS (VI), SeSnS-SZrSe (VII) and SeSnS-SeZrS (VIII) are dynamically, thermally, energetically and mechanical stable. Six configurations, (I, II, III, IV, V and VI) have indirect band gaps with type-II band alignments, enhancing carrier lifetime an essential feature for potential applications in photovoltaic and nanoelectronics devices. In contrast, VII and VIII have indirect band gap with a type-I band alignment, facilitating efficient recombination of electron-hole pairs under high irradiation. All heterobilayers demonstrated significant optical absorption in the visible region. These findings highlight the potential utilization of heterobilayers in electronic and optoelectronic devices.

Two-dimensional superhard silicon nitrides with widely tunable bandgap, high carrier mobility and hole-doping-induced robust magnetism

The search for new forms of the traditional bulk materials to enrich their interactions and properties is an attractive subject in two-dimensional (2D) materials. In this work, novel tetra-hexa-mixed coordinated 2D silicon nitrides (Si3N4) and their analogues are systematically investigated via density functional theory. The results show the global minimum 2D structure, Si3N4 (T-aa), is a highly chemically and thermally stable superhard semiconductor with a wide indirect bandgap (about 6.0 eV), which is widely adjustable under both biaxial strain and vertical electric field. It also possesses anisotropic high carrier mobility, up to 5490 cm2 V-1 s-1 at room temperature. Besides, its nitride analogues of group IVA (Si, Ge, Sn, and Pb) exhibit diverse electronic structures with regular bandgap distribution. Remarkably, some nitride analogues display linearly increasing robust magnetism with hole doping. The theoretical Curie temperatures of Si3N4 and Sn3N4 with hole doping (1h+ per unit cell) are 298 and 180 K, respectively. The Si3N4 (T-aa) and its analogues have a variety of excellent properties to be potentially applied in various fields, e.g., semiconductor electronics, spintronics, high-temperature structural materials, and superhard materials.

Valley-dimensionality locking of superconductivity in cubic phosphides

Two-dimensional superconductivity is primarily realized in atomically thin layers through extreme exfoliation, epitaxial growth, or interfacial gating. Apart from their technical challenges, these approaches lack sufficient control over the Fermiology of superconducting systems. Here, we offer a Fermiology-engineering approach, allowing us to desirably tune the coherence length of Cooper pairs and the dimensionality of superconducting states in arsenic phosphides AsxP1-x under hydrostatic pressure. We demonstrate how this turns these compounds into tunable two-dimensional superconductors with a dome-shaped phase diagram even in the bulk limit. This peculiar behavior is shown to result from an unconventional valley-dimensionality locking mechanism, driven by a delicate competition between three-dimensional hole-type and two-dimensional electron-type energy pockets spatially separated in momentum space. The resulting dimensionality crossover is further discussed to be systematically controllable by pressure and stoichiometry tuning. Our findings pave a unique way to realize and control superconducting phases with special pairing and dimensional orders.

Many-Body Molecular Interactions in a Memristor

Electronic transitions in molecular-circuit elements hinge on complex interactions between molecules and ions, offering a multidimensional parameter space to embed, access, and optimize material functionalities for target-specific applications. This opportunity is not cultivated in molecular memristors because their low-temperature charge transport, which is a route to decipher molecular many-body interactions, is unexplored. To address this, robust, temperature-resilient molecular memristors based on a Ru complex of an azo aromatic ligand are designed, and current-voltage sweep measurements from room temperature down to 2 K with different cooling protocols are performed. By freezing out or activating different components of supramolecular dynamics, the local Coulombic interactions between the molecules and counterions that affect the electronic transport can be controlled. Operating conditions are designed where functionalities spanning bipolar, unipolar, nonvolatile, and volatile memristors with sharp as well as gradual analog transitions are captured within a single device. A mathematical design space evolves, thereof comprising 36 tuneable parameters in which all possible steady-state functional variations in a memristor characteristic can be attainable. This enables a deterministic design route to engineer neuromorphic devices with unprecedented control over the transformation characteristics governing their functional flexibility and tunability.

Coexistence of ferromagnetism and charge density waves in monolayer LaBr2

Charge density waves (CDWs), a common phenomenon of periodic lattice distortions, often suppress ferromagnetism in two-dimensional (2D) materials, hindering their magnetic applications. Here, we report a novel CDW that generates 2D ferromagnetism instead of suppressing it, through the formation of interstitial anionic electrons as the charge modulation mechanism. Via first-principles calculations and a low-energy effective model, we find that the highly symmetrical monolayer LaBr2 undergoes a 2 × 1 CDW transition to a magnetic semiconducting T' phase. Concurrently, the delocalized 5d1 electrons of La in LaBr2 redistribute and accumulate within the interstitial space in the T' phase, forming anionic electrons, also known as 2D electride or electrene. The strongly localized nature of anionic electrons promotes a Mott insulating state and full spin-polarization, while the overlap of their extended tails yields ferromagnetic direct exchange between them. Such transition introduces a new magnetic form of CDWs, offering promising opportunities for exploring novel fundamental physics and advanced spintronics applications.

Ferromagnetic and half-metallic phase transition by doping in a one-dimensional narrow-bandgap W6PCl17 semiconductor

Based on first-principles calculations, we predict a one-dimensional (1D) semiconductor with cluster-type structure, namely phosphorus-centered tungsten chloride W6PCl17. The corresponding single-chain system can be prepared from its bulk counterpart by an exfoliation method and it exhibits good thermal and dynamical stability. 1D single-chain W6PCl17 is a narrow direct semiconductor with a bandgap of 0.58 eV. The unique electronic structure endows single-chain W6PCl17 with the p-type transport characteristic, manifested as a large hole mobility of 801.53 cm2 V-1 s-1. Remarkably, our calculations show that electron doping can easily induce itinerant ferromagnetism in single-chain W6PCl17 due to the extremely flat band feature near the Fermi level. Such ferromagnetic phase transition expectedly occurs at an experimentally achievable doping concentration. Importantly, a saturated magnetic moment of 1μB per electron is obtained over a large range of doping concentrations (from 0.02 to 5 electrons per formula unit), accompanied by the stable existence of half-metallic characteristics. A detailed analysis of the doping electronic structures indicates that the doping magnetism is mainly contributed by the d orbitals of partial W atoms. Our findings demonstrate that single-chain W6PCl17 is a typical 1D electronic and spintronic material expected to be synthesized experimentally in the future.

Carrier-Density Control of the Quantum-Confined 1T-TiSe_{2} Charge Density Wave

Using angle-resolved photoemission spectroscopy, combined with first principle and coupled self-consistent Poisson-Schrödinger calculations, we demonstrate that potassium (K) atoms adsorbed on the low-temperature phase of 1T-TiSe_{2} induce the creation of a two-dimensional electron gas (2DEG) and quantum confinement of its charge-density wave (CDW) at the surface. By further changing the K coverage, we tune the carrier density within the 2DEG that allows us to nullify, at the surface, the electronic energy gain due to exciton condensation in the CDW phase while preserving a long-range structural order. Our Letter constitutes a prime example of a controlled exciton-related many-body quantum state in reduced dimensionality by alkali-metal dosing.

Ultrafast Switching from the Charge Density Wave Phase to a Metastable Metallic State in 1T-TiSe_{2}

The ultrafast electronic structures of the charge density wave material 1T-TiSe_{2} were investigated by high-resolution time- and angle-resolved photoemission spectroscopy. We found that the quasiparticle populations drove ultrafast electronic phase transitions in 1T-TiSe_{2} within 100 fs after photoexcitation, and a metastable metallic state, which was significantly different from the equilibrium normal phase, was evidenced far below the charge density wave transition temperature. Detailed time- and pump-fluence-dependent experiments revealed that the photoinduced metastable metallic state was a result of the halted motion of the atoms through the coherent electron-phonon coupling process, and the lifetime of this state was prolonged to picoseconds with the highest pump fluence used in this study. Ultrafast electronic dynamics were well captured by the time-dependent Ginzburg-Landau model. Our work demonstrates a mechanism for realizing novel electronic states by photoinducing coherent motion of atoms in the lattice.

Mobile Kink Solitons in a Van der Waals Charge-Density-Wave Layer

Kinks, point-like geometrical defects along dislocations, domain walls, and DNA, are stable and mobile, as solutions of a sine-Gordon wave equation. While they are widely investigated for crystal deformations and domain wall motions, electronic properties of individual kinks have received little attention. In this work, electronically and topologically distinct kinks are discovered along electronic domain walls in a correlated van der Waals insulator of 1T-TaS₂ . Mobile kinks and antikinks are identified as trapped by pinning defects and imaged in scanning tunneling microscopy. Their atomic structures and in-gap electronic states are unveiled, which are mapped approximately into Su-Schrieffer-Heeger solitons. The twelvefold degeneracy of the domain walls in the present system guarantees an extraordinarily large number of distinct kinks and antikinks to emerge. Such large degeneracy together with the robust geometrical nature may be useful for handling multilevel information in van der Waals materials architectures.

Observation of photoinduced polarons in semimetal 1T-TiSe2

In this work, ultrafast carrier dynamics of mechanically exfoliated 1T-TiSe₂flakes from the high-quality single crystals with self-intercalated Ti atoms are investigated by femtosecond transient absorption spectroscopy. The observed coherent acoustic and optical phonon oscillations after ultrafast photoexcitation reveal the strong electron-phonon coupling in 1T-TiSe₂. The ultrafast carrier dynamics probed in both visible and mid-infrared regions indicate that some photogenerated carriers localize near the intercalated Ti atoms and form small polarons rapidly within several picoseconds after photoexcitation due to the strong and short-range electron-phonon coupling. The formation of polarons leads to a reduction of carrier mobility and a long-time relaxation process of photoexcited carriers for several nanoseconds. The formation and dissociation rates of the photoinduced polarons are dependent on both the pump fluence and the thickness of TiSe₂sample. This work offers new insights into the photogenerated carrier dynamics of 1T-TiSe₂, and emphasizes the effects of intercalated atoms on the electron and lattice dynamics after photoexcitation.

High-Throughput DFT-Based Discovery of Next Generation Two-Dimensional (2D) Superconductors

High-throughput density functional theory (DFT) calculations allow for a systematic search for conventional superconductors. With the recent interest in two-dimensional (2D) superconductors, we used a high-throughput workflow to screen over 1000 2D materials in the JARVIS-DFT database and performed electron-phonon coupling calculations, using the McMillan-Allen-Dynes formula to calculate the superconducting transition temperature (T_c) for 165 of them. Of these 165 materials, we identify 34 dynamically stable structures with transition temperatures above 5 K, including materials such as W₂N₃, NbO₂, ZrBrO, TiClO, NaSn₂S₄, Mg₂B₄C₂, and the previously unreported Mg₂B₄N₂ (T_c = 21.8 K). Finally, we performed experiments to determine the T_c of selected layered superconductors (2H-NbSe₂, 2H-NbS₂, ZrSiS, FeSe) and discuss the measured results within the context of our DFT results. We aim that the outcome of this workflow can guide future computational and experimental studies of new and emerging 2D superconductors by providing a roadmap of high-throughput DFT data.

Tunability of the Superconductivity of NbSe2 Films Grown by Two-Step Vapor Deposition

Layered metallic transition-metal dichalcogenides (TMDCs) are ideal platforms for exploring their fascinating electronic properties at two-dimensional limits, such as their charge density wave (CDW) and superconductivity. Therefore, developing ways to improve the crystallization quality of TMDCs is urgently needed. Here we report superconductively tunable NbSe₂ grown by a two-step vapor deposition method. By optimizing the sputtering conditions, superconducting NbSe₂ films were prepared from highly crystalline Nb films. The bilayer NbSe₂ films showed a superconducting transition temperature that was up to 3.1 K. Similar to the salt-assisted chemical vapor deposition (CVD) method, superconducting monolayer NbSe₂ crystals were also grown from a selenide precursor, and the growth strategy is suitable for many other TMDCs. Our growth method not only provides a way to improve the crystalline quality of TMDC films, but also gives new insight into the growth of monolayer TMDCs. It holds promise for exploring two-dimensional TMDCs in fundamental research and device applications.

Interlayer Chemical Modulation of Phase Transitions in Two-Dimensional Metal Chalcogenides

Two-dimensional metal chalcogenides (2D-MCs) with complex interactions are usually rich in phase transition behavior, such as superconductivity, charge density wave (CDW), and magnetic transitions, which hold great promise for the exploration of exciting physical properties and functional applications. Interlayer chemical modulation, as a renewed surface modification method, presents congenital advantages to regulate the phase transitions of 2D-MCs due to its confined space, strong guest-host interactions, and local and reversible modulation without destructing the host lattice, whereby new phenomena and functionalities can be produced. Herein, recent achievements in the interlayer chemical modulation of 2D-MCs are reviewed from the aspects of superconducting transition, CDW transition, semiconductor-to-metal transition, magnetic phase transition, and lattice transition. We systematically discuss the roles of charge transfer, spin coupling, and lattice strain on the modulation of phase transitions in the guest-host architectures of 2D-MCs established by electrochemical intercalation, solution-processed intercalation, and solid-state intercalation. New physical phenomena, new insight into the mechanism of phase transitions, and derived functional applications are presented. Finally, a prospectus of the challenges and opportunities of interlayer chemical modulation for future research is pointed out.

Structural, electronic and thermoelectric properties of GeC and MXO (M = Ti, Zr and X = S, Se) monolayers and their van der Waals heterostructures

Vertical stacking of two-dimensional materials into layered van der Waals heterostructures is considered favourable for nanoelectronics and thermoelectric applications. In this work, we investigate the structural, electronic and thermoelectric properties of GeC and Janus monolayers MXO (M = Ti, Zr; X = S, Se) and their van der Waals (vdW) heterostructures using first-principles calculations. The values of binding energies, interlayer distances and thermal stability confirm the stability of these vdW heterostructures. The calculated band structure shows that GeC monolayer have a direct band gap while MXO (M = Ti, Zr; X = S, Se) and their van der Waals heterostructures show indirect band nature. Partial density of states confirms the type-II band alignment of GeC–MXY vdW heterostructures. Our results shows that ZrSeO (GeC) monolayers and GeC–ZrSO vdW heterostructures have higher power factor, making them promising for thermoelectric device applications.

Calculated Seebeck coefficient (a) and (b) electrical conductivity (c) and (d) and power factor (e) and (f) of GeC–TiSO, GeC–TiSeO, GeC–ZrSO and GeC–ZrSeO vdW heterostructures for 300 K and 800 K, respectively.

Multivalley Superconductivity in Monolayer Transition Metal Dichalcogenides

In transition metal dichalcogenides (TMDs), Ising superconductivity with an antisymmetric spin texture on the Fermi surface has attracted wide interest due to the exotic pairing and topological properties. However, it is not clear whether the Q valley with a giant spin splitting is involved in the superconductivity of heavily doped semiconducting 2H-TMDs. Here by taking advantage of a high-quality monolayer WS₂ on hexagonal boron nitride flakes, we report an ionic-gating induced superconducting dome with a record high critical temperature of ∼6 K, accompanied by an emergent nonlinear Hall effect. The nonlinearity indicates the development of an additional high-mobility channel, which (corroborated by first principle calculations) can be ascribed to the population of Q valleys. Thus, multivalley population at K and Q is suggested to be a prerequisite for developing superconductivity. The involvement of Q valleys also provides insights to the spin textured Fermi surface of Ising superconductivity in the large family of transition metal dichalcogenides.

Freestanding complex-oxide membranes

Complex oxides show a vast range of functional responses, unparalleled within the inorganic solids realm, making them promising materials for applications as varied as next-generation field-effect transistors, spintronic devices, electro-optic modulators, pyroelectric detectors, or oxygen reduction catalysts. Their stability in ambient conditions, chemical versatility, and large susceptibility to minute structural and electronic modifications make them ideal subjects of study to discover emergent phenomena and to generate novel functionalities for next-generation devices. Recent advances in the synthesis of single-crystal, freestanding complex oxide membranes provide an unprecedented opportunity to study these materials in a nearly-ideal system (e.g. free of mechanical/thermal interaction with substrates) as well as expanding the range of tools for tweaking their order parameters (i.e. (anti-)ferromagnetic, (anti-)ferroelectric, ferroelastic), and increasing the possibility of achieving novel heterointegration approaches (including interfacing dissimilar materials) by avoiding the chemical, structural, or thermal constraints in synthesis processes. Here, we review the recent developments in the fabrication and characterization of complex-oxide membranes and discuss their potential for unraveling novel physicochemical phenomena at the nanoscale and for further exploiting their functionalities in technologically relevant devices.

Atomic and structural modifications of two-dimensional transition metal dichalcogenides for various advanced applications

Two-dimensional (2D) transition metal dichalcogenides (TMDs) and their heterostructures have attracted significant interest in both academia and industry because of their unusual physical and chemical properties. They offer numerous applications, such as electronic, optoelectronic, and spintronic devices, in addition to energy storage and conversion. Atomic and structural modifications of van der Waals layered materials are required to achieve unique and versatile properties for advanced applications. This review presents a discussion on the atomic-scale and structural modifications of 2D TMDs and their heterostructures via post-treatment. Atomic-scale modifications such as vacancy generation, substitutional doping, functionalization and repair of 2D TMDs and structural modifications including phase transitions and construction of heterostructures are discussed. Such modifications on the physical and chemical properties of 2D TMDs enable the development of various advanced applications including electronic and optoelectronic devices, sensing, catalysis, nanogenerators, and memory and neuromorphic devices. Finally, the challenges and prospects of various post-treatment techniques and related future advanced applications are addressed.

Anomalous Metallic Phase in Molybdenum Disulphide Induced via Gate-Driven Organic Ion Intercalation

Transition metal dichalcogenides exhibit rich phase diagrams dominated by the interplay of superconductivity and charge density waves, which often result in anomalies in the electric transport properties. Here, we employ the ionic gating technique to realize a tunable, non-volatile organic ion intercalation in bulk single crystals of molybdenum disulphide (MoS2). We demonstrate that this gate-driven organic ion intercalation induces a strong electron doping in the system without changing the pristine 2H crystal symmetry and triggers the emergence of a re-entrant insulator-to-metal transition. We show that the gate-induced metallic state exhibits clear anomalies in the temperature dependence of the resistivity with a natural explanation as signatures of the development of a charge-density wave phase which was previously observed in alkali-intercalated MoS2. The relatively large temperature at which the anomalies are observed (∼150 K), combined with the absence of any sign of doping-induced superconductivity down to ∼3 K, suggests that the two phases might be competing with each other to determine the electronic ground state of electron-doped MoS2.

Sub-Band Filling, Mott-like Transitions, and Ion Size Effects in C60 Single Crystal Electric Double Layer Transistors

Electric double layer transistors (EDLTs) based on C₆₀ single crystals and ionic liquid gates display pronounced peaks in sheet conductance versus gate-induced charge. Sheet conductance is maximized at electron densities near 0.5 e/C₆₀ and is suppressed near 1 e/C₆₀. The conductance suppression depends markedly on the choice of ionic liquid cation, with small cations favoring activated transport and essentially a complete shutdown of conductance at ∼1 e/C₆₀ and larger cations favoring band-like transport, higher overall conductances at all charge densities up to 1.7 e/C₆₀, and weaker suppression at 1 e/C₆₀. Displacement current measurements on C₆₀ EDLTs with small cations show clear evidence of sub-band filling at 1 e/C₆₀, which correlates very well with the minimum in the C₆₀ sheet conductance. Overall, the data suggest a significant Mott-Hubbard-like energy gap opens up in the surface density of states for C₆₀ crystals gated with small cations. The causes of this energy gap may include both electron-electron repulsion and electron-cation attraction at the crystal/ionic liquid interface. The energy gap suppresses the insulator-to-metal transition in C₆₀ EDLTs, but it can be manipulated by choice of electrolyte.

Little-Parks like oscillations in lightly doped cuprate superconductors

Understanding the rich and competing electronic orders in cuprate superconductors may provide important insight into the mechanism of high-temperature superconductivity. Here, by measuring Bi₂Sr₂CaCu₂O_8+x in the extremely underdoped regime, we obtain evidence for a distinct type of ordering, which manifests itself as resistance oscillations at low magnetic fields (≤10 T) and at temperatures around the superconducting transition. By tuning the doping level p continuously, we reveal that these low-field oscillations occur only when p < 0.1. The oscillation amplitude increases with decreasing p but the oscillation period stays almost constant. We show that these low-field oscillations can be well described by assuming a periodic superconducting structure with a mesh size of about 50 nm. Such a charge order, which is distinctly different from the well-established charge density wave and pair density wave, seems to be an unexpected piece of the puzzle on the correlated physics in cuprates.

Understanding the rich electronic orders in cuprate superconductors provide insights into the mechanism of high-temperature superconductivity. Here, the authors report a distinct charge order with Little-Parks like resistance oscillations at magnetic fields up to 10 T and around T_c in lightly doped Bi₂Sr₂CaCu₂O_8+x.

Non-Maxwell-Boltzmann dependence of channel carrier concentration in a quasi one dimensional charge density wave channel in the ballistic transport regime

With the aid of a coherent transport model utilizing the non-equilibrium Green function approach, a three terminal device with metallic gate, source and drain and a quasi one dimensional charge density wave (CDW) channel is simulated focussing on the transistor behaviour brought about by a sweep of the channel potential or equivalently the chemical potential in the channel. The channel is strongly insulating only at half-filling and moving to lower and higher carrier concentrations both incur a mean field phase transition to a conducting state. With the aid of conductance calculations for a pinned CDW condensate, we present calculations for the sub-threshold slope in terms of the hopping parameter or equivalently the width of the tight-binding chain. The effects of source to drain bias and length are examined. The conductance profiles are analyed in relation to transmission profiles. The observed CDW profiles are explained in terms of filling and Fermi surface nesting. Boundary conditions, gap equations and response functions are shown to reveal the commensurability conditions and size of the transport gap. The channel carrier concentration is modulated in an athermal (non-Maxwellian-Boltzmann) fashion, thereby making it an interesting prospect for steep transistors.

Carrier doping-induced strong magnetoelastic coupling in 2D lattice

The realization of intertwined ferroelasticity and ferromagnetism in two-dimensional (2D) lattices is of great interest for broad nanoscale applications but still remains a remarkable challenge. Here, we propose an alternative approach to realize the strongly coupled ferromagnetism and ferroelasticity by carrier doping. We demonstrate that prototypical 2D β-PbO is dynamically, thermally and mechanically stable. Under hole doping, 2D β-PbO possesses ferromagnetism and ferroelasticity simultaneously. Moreover, the robustness of ferromagnetic and ferroelastic orders is doping tunable. In particular, 2D β-PbO features an in-plane easy magnetization axis that is coupled with the lattice direction, enabling the ferroelastic manipulation of the spin direction. Furthermore, the efficient ferroelastic control of the anisotropic optical property and spin splitting in 2D β-PbO are also clarified. Our study highlights a new direction for 2D magnetoelastic research and enables the possibility for multifunctional devices.

Coexisting Charge-Ordered States with Distinct Driving Mechanisms in Monolayer VSe2

Thinning crystalline materials to two dimensions (2D) creates a rich playground for electronic phases, including charge, spin, superconducting, and topological order. Bulk materials hosting charge density waves (CDWs), when reduced to ultrathin films, have shown CDW enhancement and tunability. However, charge order confined to only 2D remains elusive. Here we report a distinct charge ordered state emerging in the monolayer limit of 1T-VSe₂. Systematic scanning tunneling microscopy experiments reveal that bilayer VSe₂ largely retains the bulk electronic structure, hosting a tridirectional CDW. However, monolayer VSe₂ ─consistently across distinct substrates─exhibits a dimensional crossover, hosting two CDWs with distinct wavelengths and transition temperatures. Electronic structure calculations reveal that while one CDW is bulk-like and arises from the well-known Peierls mechanism, the other is decidedly unconventional. The observed CDW-lattice decoupling and the emergence of a flat band suggest that the second CDW could arise from enhanced electron-electron interactions in the 2D limit. These findings establish monolayer-VSe₂ as a host of coexisting charge orders with distinct origins, and enable the tailoring of electronic phenomena via emergent interactions in 2D materials.

Observation of an Incommensurate Charge Density Wave in Monolayer TiSe_{2}/CuSe/Cu(111) Heterostructure

TiSe_{2} is a layered material exhibiting a commensurate (2×2×2) charge density wave (CDW) with a transition temperature of ∼200  K. Recently, incommensurate CDW in bulk TiSe_{2} draws great interest due to its close relationship with the emergence of superconductivity. Here, we report an incommensurate superstructure in monolayer TiSe_{2}/CuSe/Cu(111) heterostructure. Characterizations by low-energy electron diffraction and scanning tunneling microscopy show that the main wave vector of the superstructure is ∼0.41a^{*} or ∼0.59a^{*} (here a^{*} is in-plane reciprocal lattice constant of TiSe_{2}). After ruling out the possibility of moiré superlattices, according to the correlation of the wave vectors of the superstructure and the large indirect band gap below the Fermi level, we propose that the incommensurate superstructure is associated with an incommensurate charge density wave (I-CDW). It is noteworthy that the I-CDW is robust with a transition temperature over 600 K, much higher than that of commensurate CDW in pristine TiSe_{2}. Based on our data and analysis, we present that interface effect may play a key role in the formation of the I-CDW state.

Semiconductor-Metal Phase Transition and Emergent Charge Density Waves in 1T-ZrX2 (X = Se, Te) at the Two-Dimensional Limit

A charge density wave (CDW) is a collective quantum phenomenon in metals and features a wavelike modulation of the conduction electron density. A microscopic understanding and experimental control of this many-body electronic state in atomically thin materials remain hot topics in materials physics. By means of material engineering, we realized a dimensionality and Zr intercalation induced semiconductor-metal phase transition in 1T-ZrX₂ (X = Se, Te) ultrathin films, accompanied by a commensurate 2 × 2 CDW order. Furthermore, we observed a CDW energy gap of up to 22 meV around the Fermi level. Fourier-transformed scanning tunneling microscopy and angle-resolved photoemission spectroscopy reveal that 1T-ZrX₂ films exhibit the simplest Fermi surface among the known CDW materials in TMDCs, consisting only of a Zr 4d derived elliptical electron conduction band at the corners of the Brillouin zone.

Spatially Separated Superconductivity and Enhanced Charge-Density-Wave Ordering in an IrTe2 Nanoflake

The interplay among collective electronic states like superconductivity (SC) and charge density wave (CDW) is of significance in transition metal dichalcogenides. To date, a consensus on the relationship between SC and CDW has not been established in IrTe₂. Here we use the Au-assisted exfoliation method to cleave IrTe₂ down to 10 nm. A striking feature is the concurrence of phase separation in a single piece of nanoflake, i.e., the superconducting (P3̅m1) and CDW (P3̅) phases. In the former area, the dimensional fluctuations suppress the CDW ordering and induce SC at 3.5 K. The CDW area at the phase boundary shows enhanced T_CDW at 605 K (T_CDW = 280 K in the bulk phase), which is accompanied by a unique wrinkle. Detailed analyses suggest that the strain-induced bond breaking of Te-Te dimers favors the CDW. Our works provide compelling evidence of competition between SC and CDW in IrTe₂.

Phase fluctuations in conventional superconductors

Within the Bardeen-Cooper-Schrieffer (BCS) theory, superconductivity is entirely governed by the pairing energy scale, which gives rise to the superconducting energy gap, Δ. However, another important energy scale, the superfluid phase stiffness,J, which determines the resilience of the superconductor to phase-fluctuations is normally ignored. The spectacular success of BCS theory owes to the fact that in conventional superconductorsJis normally several orders of magnitude larger than Δ and thus an irrelevant energy scale. However, in certain situations such as in the presence of low carrier density, strong disorder, at low-dimensions or in granular superconductors,Jcan drastically come down and even become smaller than Δ. In such situations, the temperature and magnetic field evolution of superconducting properties is governed by phase fluctuations, which gives rise to novel electronic states where signatures of electronic pairing continue to exist even when the zero resistance state is destroyed. In this article, we will review the recent experimental developments on the study of phase fluctuations in conventional superconductors.

Atomic Defect Induced Saturable Absorption of Hexagonal Boron Nitride in Near Infrared Band for Ultrafast Lasing Applications

Defect-induced phenomena in 2D materials has received increasing interest among researchers due to the novel properties correlated with precise modification of materials. We performed a study of the nonlinear saturable absorption of the boron-atom-vacancy defective hexagonal boron nitride (h-BN) thin film at a wavelength of ~1 μm and its applications in ultrafast laser generation. The h-BN is with wide band gap of ~6 eV. Our investigation shows that the defective h-BN has a wide absorption band from visible to near infrared regimes. First-principle calculations based on density functional theory (DFT) indicate that optical property changes may be attributed to the boron-vacancy-related defects. The photoluminescence spectrum shows a strong emission peak at ~1.79 eV. The ultrafast Z-scan measurement shows saturable absorbance response has been detected for the defective h-BN with saturation intensity of ~1.03 GW/cm² and modulation depth of 1.1%. In addition, the defective h-BN has been applied as a new saturable absorber (SA) to generate laser pulses through the passively Q-switched mode-locking configuration. Based on a Nd:YAG waveguide platform, 8.7 GHz repetition rate and 55 ps pulse duration of the waveguide laser have been achieved. Our results suggest potential applications of defective h-BN for ultrafast lasing and integrated photonics.

Exploring the emerging of electronic and magnetic properties with adatom adsorption on a novel semiconductor monolayer: N2P6

The effect of adsorbed adatoms on the structural stability and electronic properties of monolayer N₂P₆ have been systematically studied via first-principles simulation methods. It is found that pristine N₂P₆ is an indirect 0.21 eV band gap semiconductor, with a pleated honeycomb-like structure similar to phosphorene. The calculation results show that adsorbed adatoms can modify the properties of monolayer N₂P₆ effectively. The degree of local distortion strongly depends on the electronegativity and size of adatoms, also the adsorption energy ranges from 0.3 to 5.8 eV depending on the species of adatoms. The electronic properties show metallic behavior with several adsorbed metal atoms (Li, Na, Al, K, Cu, Ni, and Zn) and some non-metal atoms (H, F, P, and Cl), while adsorbed O, S, Ca, and Si atoms still remain semiconductors. The systems of Ni and Zn adatoms show ferromagnetic behavior, and adsorbed Mg exhibits a half-metallic character. Our theoretical studies indicate that N₂P₆ possesses potential application in the field of gas sensors.

Exploring the growth and oxidation of 2D-TaS2on Cu(111)

In this work, the growth and stability towards O₂exposure of two dimensional (2D) TaS₂on a Cu(111) substrate is investigated. Large area (∼1 cm²) crystalline 2D-TaS₂films with a metallic character are prepared on a single crystal Cu(111) substrate via a multistep approach based on physical vapor deposition. Analytical techniques such as Auger electron spectroscopy, low energy electron diffraction, and photoemission spectroscopy are used to characterize the composition, crystallinity, and electronic structure of the surface. At coverages below one monolayer equivalent (ML), misoriented TaS₂domains are formed, which are rotated up to±13orelative to the Cu(111) crystallographic directions. The TaS₂domains misorientation decreases as the film thickness approaches 1 ML, at which the crystallographic directions of TaS₂and Cu(111) are aligned. The TaS₂film is found to grow epitaxially on Cu(111). As revealed by low energy electron diffraction in conjunction with an atomic model simulation, the (3 × 3) unit cells of TaS₂match the (4 × 4) supercell of Cu(111). Furthermore, the exposure of TaS₂to O₂, does not lead to the formation of a robust tantalum oxide film, only minor amounts of stable oxides being detected on the surface. Instead, the exposure of TaS₂films to O₂leads predominantly to a reduction of the film thickness, evidenced by a decrease in the content of both Ta and S atoms of the film. This is attributed to the formation of oxide species that are unstable and mainly desorb from the surface below room temperature. Temperature programmed desorption spectroscopy confirms the formation of SO₂, which desorbs from the surface between 100 and500 K.These results provide new insights into the oxidative degradation of 2D-TaS₂on Cu(111).

A versatile sample fabrication method for ultrafast electron diffraction

Integral to the exploration of nonequilibrium phenomena in solid-state systems is the study of lattice motion after photoexcitation by a femtosecond laser pulse. For the past two decades, ultrafast electron diffraction (UED) has played a critical role in this regard. Despite remarkable progress in instrumental development, this technique is still bottlenecked by a demanding sample preparation process, where ultrathin single crystals of large lateral size are typically required. In this work, we describe an efficient, versatile method that yields high-quality, laterally extended (≥ 100 µm), and thin (≤ 50 nm) single crystals on amorphous films of Si₃N₄ windows. It applies to most exfoliable materials, including those reactive in ambient conditions, and promises clean, flat surfaces. Besides the natural extension to fabricating van der Waals heterostructures, our method can also be applied to future-generation UED that enables additional control of sample parameters, such as electrostatic gating and excitation by a locally enhanced terahertz field. Our work significantly expands the type of samples for UED studies and also finds application in other time-resolved techniques such as attosecond extreme-ultraviolet absorption spectroscopy. This method hence provides further opportunities to explore photoinduced transitions and to discover novel states of matter out of equilibrium.

Coexistence of resistance oscillations and the anomalous metal phase in a lithium intercalated TiSe2 superconductor

Superconductivity and charge density wave (CDW) appear in the phase diagram of a variety of materials including the high-T_c cuprate family and many transition metal dichalcogenides (TMDs). Their interplay may give rise to exotic quantum phenomena. Here, we show that superconducting arrays can spontaneously form in TiSe₂–a TMD with coexisting superconductivity and CDW—after lithium ion intercalation. We induce a superconducting dome in the phase diagram of Li_xTiSe₂ by using the ionic solid-state gating technique. Around optimal doping, we observe magnetoresistance oscillations, indicating the emergence of periodically arranged domains. In the same temperature, magnetic field and carrier density regime where the resistance oscillations occur, we observe signatures for the anomalous metal—a state with a resistance plateau across a wide temperature range below the superconducting transition. Our study not only sheds further insight into the mechanism for the periodic electronic structure, but also reveals the interplay between the anomalous metal and superconducting fluctuations.

The interplay between superconductivity and charge density wave (CDW) gives rise to exotic quantum phenomena. Here, the authors observe magnetoresistance oscillations and an anomalous metal state due to the coexistence of superconductivity and CDW in lithium intercalated TiSe₂.

Surface Diffusion and Epitaxial Self-Planarization for Wafer-Scale Single-Grain Metal Chalcogenide Thin Films

Although wafer-scale single-grain thin films of 2D metal chalcogenides (MCs) have been extensively sought after during the last decade, the grain size of the MC thin films is still limited in the sub-millimeter scale. A general strategy of synthesizing wafer-scale single-grain MC thin films by using commercial wafers (Si, Ge, GaAs) both as metal source and epitaxial collimator is presented. A new mechanism of single-grain thin-film formation, surface diffusion, and epitaxial self-planarization is proposed, where chalcogen elements migrate preferentially along substrate surface and the epitaxial crystal domains flow to form an atomically smooth thin film. Through synchrotron X-ray diffraction and high-resolution scanning transmission electron microscopy, the formation of single-grain Si₂ Te₃ , GeTe, GeSe, and GaTe thin films on (111) Si, Ge, and (100) GaAs is verified. The Si₂ Te₃ thin film is used to achieve transfer-free fabrication of a high-performance bipolar memristive electrical-switching device.

Intercalation Strategy in 2D Materials for Electronics and Optoelectronics

Intercalation is an effective approach to tune the physical and chemical properties of 2D materials due to their abundant van der Waals gaps that can host high-density intercalated guest matters. This approach has been widely employed to modulate the optical, electrical, and photoelectrical properties of 2D materials for their applications in electronic and optoelectronic devices. Thus it is necessary to review the recent progress of the intercalation strategy in 2D materials and their applications in devices. Herein, various intercalation strategies and the novel properties of the intercalated 2D materials as well as their applications in electronics and optoelectronics are summarized. In the end, the development tendency of this promising approach for 2D materials is also outlined.

Gate-tunable superconductivity and charge-density wave in monolayer 1T'-MoTe2 and 1T'-WTe2

Using first-principles calculation methods, we reveal a series of phase transitions as a function of gating or electron doping in monolayered quantum spin Hall (QSH) insulators, 1T'-MoTe₂ and 1T'-WTe₂. With increasing electron doping, we show that a phonon mediated superconducting phase is realized first and is followed by a charge density wave (CDW) phase with a nonsymmorphic lattice symmetry. The newly found CDW phase exhibits Weyl energy bands with spin-orbit coupling with fractional band filling, and reforms into a topological nontrivial phase with fully filled bands. The robust resurgence of the QSH state coexisting with the CDW phase is shown to originate from band inversions induced by the nonsymmorphic lattice distortion through the strong electron-phonon interaction, thus suggesting the realization of various interfacial states between superconducting states, and various CDW and topological states on a two-dimensional crystal by inhomogeneous gating or doping.

Light Controllable Electronic Phase Transition in Ionic Liquid Gated Monolayer Transition Metal Dichalcogenides

Ionic liquid gating has proved to be effective in inducing emergent quantum phenomena such as superconductivity, ferromagnetism, and topological states. The electrostatic doping at two-dimensional interfaces relies on ionic motion, which thus is operated at sufficiently high temperature. Here, we report the in situ tuning of quantum phases by shining light on an ionic liquid-gated interface at cryogenic temperatures. The light illumination enables flexible switching of the quantum transition in monolayer WS₂ from an insulator to a superconductor. In contrast to the prevailing picture of photoinduced carriers, we find that in the presence of a strong interfacial electric field conducting electrons could escape from the surface confinement by absorbing photons, mimicking the field emission. Such an optical tuning tool in conjunction with ionic liquid gating greatly facilitates continuous modulation of carrier densities and hence electronic phases, which would help to unveil novel quantum phenomena and device functionality in various materials.

Hexagonal metal oxide monolayers derived from the metal-gas interface

Two-dimensional (2D) crystals are promising materials for developing future nano-enabled technologies^1-6. The cleavage of weak, interlayer van der Waals bonds in layered bulk crystals enables the production of high-quality 2D, atomically thin monolayers^7-10. Nonetheless, as earth-abundant compounds, metal oxides are rarely accessible as pure and fully stoichiometric monolayers owing to their ion-stabilized 'lamellar' bulk structure^11-14. Here, we report the discovery of a layered planar hexagonal phase of oxides from elements across the transition metals, post-transition metals, lanthanides and metalloids, derived from strictly controlled oxidation at the metal-gas interface. The highly crystalline monolayers, without the support of ionic dopants or vacancies, can easily be mechanically exfoliated by stamping them onto substrates. Monolayer and few-layered hexagonal TiO₂ are characterized as examples, showing p-type semiconducting properties with hole mobilities of up to 950 cm² V^-1 s^-1 at room temperature. The strategy can be readily extended to a variety of elements, possibly expanding the exploration of metal oxides in the 2D quantum regime.