Atomically engineered ferroic layers yield a room-temperature magnetoelectric multiferroic

3D oxygen vacancy distribution and defect-property relations in an oxide heterostructure

Oxide heterostructures exhibit a vast variety of unique physical properties. Examples are unconventional superconductivity in layered nickelates and topological polar order in (PbTiO3)n/(SrTiO3)n superlattices. Although it is clear that variations in oxygen content are crucial for the electronic correlation phenomena in oxides, it remains a major challenge to quantify their impact. Here, we measure the chemical composition in multiferroic (LuFeO3)9/(LuFe2O4)1 superlattices, mapping correlations between the distribution of oxygen vacancies and the electric and magnetic properties. Using atom probe tomography, we observe oxygen vacancies arranging in a layered three-dimensional structure with a local density on the order of 1014 cm-2, congruent with the formula-unit-thick ferrimagnetic LuFe2O4 layers. The vacancy order is promoted by the locally reduced formation energy and plays a key role in stabilizing the ferroelectric domains and ferrimagnetism in the LuFeO3 and LuFe2O4 layers, respectively. The results demonstrate pronounced interactions between oxygen vacancies and the multiferroic order in this system and establish an approach for quantifying the oxygen defects with atomic-scale precision in 3D, giving new opportunities for deterministic defect-enabled property control in oxide heterostructures.

Nonreciprocal and Nonvolatile Electric-Field Switching of Magnetism in van der Waals Heterostructure Multiferroics

Multiferroic materials provide robust and efficient routes for the control of magnetism by electric fields, which have been diligently sought after for a long time. Construction of two-dimensional (2D) vdW multiferroics is a more exciting endeavor. To date, the nonvolatile manipulation of magnetism through ferroelectric polarization still remains challenging in a 2D vdW heterostructure multiferroic. Here, we report a van der Waals (vdW) heterostructure multiferroic comprising the atomically thin layered antiferromagnet (AFM) CrI3 and ferroelectric (FE) α-In2Se3. We demonstrate anomalously nonreciprocal and nonvolatile electric-field control of magnetization by ferroelectric polarization. The nonreciprocal electric control originates from an intriguing antisymmetric enhancement of interlayer ferromagnetic coupling in the opposite ferroelectric polarization configurations of α-In2Se3. Our work provides numerous possibilities for creating diverse heterostructure multiferroics at the limit of a few atomic layers for multistage magnetic memories and brain-inspired in-memory computing.

High-Temperature Ferroic Glassy States in SrTiO_{3}-Based Thin Films

Disordered ferroics hold great promise for next-generation magnetoelectric devices because their lack of symmetry constraints implies negligible hysteresis with low energy costs. However, the transition temperature and the magnitude of polarization and magnetization are still too low to meet application requirements. Here, taking the prototype perovskite of SrTiO_{3} as an instance, we realize a coexisting spin and dipole reentrant glass states in SrTiO_{3} homoepitaxial films via manipulation of local symmetry. Room-temperature saturation magnetization and spontaneous polarization reach ∼ 10  emu/cm^{3} and ∼ 25  μC/cm^{2}, respectively, with high transition temperatures (101 K and 236 K for spin and dipole glass temperatures and 556 K and 1100 K for Curie temperatures, respectively). Our atomic-scale investigation points out an underlying mechanism, where the Ti/O-defective unit cells break the local translational and orbital symmetry to drive the formation of unusual slush states. This study advances our understanding of the nature of the intricate couplings of ferroic glasses. Our approach could be applied to numerous perovskite oxides for the simultaneous control of the local magnetic and polar orderings and for the exploration of the underlying physics.

Electrical detection and modulation of magnetism in a Dy-based ferroelectric single-molecule magnet

Electrical control of magnetism in single-molecule magnets with peculiar quantum magnetic behaviours has promise for applications in molecular electronics and quantum computing. Nevertheless, such kind of magnetoelectric effects have not been achieved in such materials. Herein, we report the successful realization of significant magnetoelectric effects by introducing ferroelectricity into a dysprosium-based single-molecule magnet through spatial cooperation between flexible organic ligands and halide ions. The stair-shaped magnetization hysteresis loop, alternating current susceptibility, and magnetic relaxation can be directly modulated by applying a moderate electric field. Conversely, the electric polarization can be modulated by applying a small magnetic field. In addition, a resonant magnetodielectric effect is clearly observed, which enables detection of quantum tunnelling of magnetization by a simple electrical measurement. The integration of ferroelectricity into single-molecule magnets not only broadens the family of single-molecule magnets but also makes electrical detection and modulation of the quantum tunnelling of magnetization a reality.

Four-dimensional electron energy-loss spectroscopy

Recent advances in scanning transmission electron microscopy have enabled atomic-scale focused, coherent, and monochromatic electron probes, achieving nanoscale spatial resolution, meV energy resolution, sufficient momentum resolution, and a wide energy detection range in electron energy-loss spectroscopy (EELS). A four-dimensional EELS (4D-EELS) dataset can be recorded with a slot aperture selecting the specific momentum direction in the diffraction plane and the beam scanning in two spatial dimensions. In this paper, the basic principle of the 4D-EELS technique and a few examples of its application are presented. In addition to parallelly acquired dispersion with energy down to a lattice vibration scale, it can map the real space variation of any EELS spectrum features with a specific momentum transfer and energy loss to study various locally inhomogeneous scattering processes. Furthermore, simple mathematical combinations associating the spectra at different momenta are feasible from the 4D dataset, e.g., the efficient acquisition of a reliable electron magnetic circular dichroism (EMCD) signal is demonstrated. This 4D-EELS technique provides new opportunities to probe the local dispersion and related physical properties at the nanoscale.

Out-of-plane polarization reversal and changes in in-plane ferroelectric and ferromagnetic domains of multiferroic BiFe0.9Co0.1O3 thin films by water printing

BiFe_0.9Co_0.1O₃ is a promising material for an ultra-low-power-consumption nonvolatile magnetic memory device because local magnetization reversal is possible through application of an electric field. Here, changes in ferroelectric and ferromagnetic domain structures in a multiferroic BiFe_0.9Co_0.1O₃ thin film induced by "water printing", which is a polarization reversal method involving chemical bonding and charge accumulation at the interface between the liquid and the film, was investigated. Water printing using pure water with pH = 6.2 resulted in an out-of-plane polarization reversal from upward to downward. The in-plane domain structure remained unchanged after the water printing process, indicating that 71° switching was achieved in 88.4% of the observation area. However, magnetization reversal was observed in only 50.1% of the area, indicating a loss of correlation between the ferroelectric and magnetic domains because of the slow polarization reversal due to nucleation growth.

Interface-related phenomena in epitaxial complex oxide ferroics across different thin film platforms: opportunities and challenges

Interfaces in complex oxides give rise to fascinating new physical phenomena arising from the interconnected spin, lattice, charge and orbital degrees of freedom. Most commonly, interfaces are engineered in epitaxial superlattice films. Of growing interest also are epitaxial vertically aligned nanocomposite films where interfaces form by self-assembly. These two thin film forms offer different capabilities for materials tuning and have been explored largely separately from one another. Ferroics (ferroelectric, ferromagnetic, multiferroic) are among the most fascinating phenomena to be manipulated using interface effects. Hence, in this review we compare and contrast the ferroic properties that arise in these two different film forms, highlighting exemplary materials combinations which demonstrate novel, enhanced and/or emergent ferroic functionalities. We discuss the origins of the observed functionalities and propose where knowledge can be translated from one materials form to another, to potentially produce new functionalities. Finally, for the two different film forms we present a perspective on underexplored/emerging research directions.

Hierarchically Engineered Manganite Thin Films with a Wide-Temperature-Range Colossal Magnetoresistance Response

Colossal magnetoresistance is of great fundamental and technological significance in condensed-matter physics, magnetic memory, and sensing technologies. However, its relatively narrow working temperature window is still a severe obstacle for potential applications due to the nature of the material-inherent phase transition. Here, we realized hierarchical La_0.7Sr_0.3MnO₃ thin films with well-defined (001) and (221) crystallographic orientations by combining substrate modification with conventional thin-film deposition. Microscopic investigations into its magnetic transition through electron holography reveal that the hierarchical microstructure significantly broadens the temperature range of the ferromagnetic-paramagnetic transition, which further widens the response temperature range of the macroscopic colossal magnetoresistance under the scheme of the double-exchange mechanism. Therefore, this work puts forward a method to alter the magnetic transition and thus to extend the magnetoresistance working window by nanoengineering, which might be a promising approach also for other phase-transition-related effects in functional oxides.

Non-volatile electric-field control of inversion symmetry

Competition between ground states at phase boundaries can lead to significant changes in properties under stimuli, particularly when these ground states have different crystal symmetries. A key challenge is to stabilize and control the coexistence of symmetry-distinct phases. Using BiFeO₃ layers confined between layers of dielectric TbScO₃ as a model system, we stabilize the mixed-phase coexistence of centrosymmetric and non-centrosymmetric BiFeO₃ phases at room temperature with antipolar, insulating and polar semiconducting behaviour, respectively. Application of orthogonal in-plane electric (polar) fields results in reversible non-volatile interconversion between the two phases, hence removing and introducing centrosymmetry. Counterintuitively, we find that an electric field 'erases' polarization, resulting from the anisotropy in octahedral tilts introduced by the interweaving TbScO₃ layers. Consequently, this interconversion between centrosymmetric and non-centrosymmetric phases generates changes in the non-linear optical response of over three orders of magnitude, resistivity of over five orders of magnitude and control of microscopic polar order. Our work establishes a platform for cross-functional devices that take advantage of changes in optical, electrical and ferroic responses, and demonstrates octahedral tilts as an important order parameter in materials interface design.

Room-Temperature Magnetoelectric Coupling in Atomically Thin ε-Fe2 O3

2D multiferroics with magnetoelectric coupling combine the magnetic order and electric polarization in a single phase, providing a cornerstone for constructing high-density information storages and low-energy-consumption spintronic devices. The strong interactions between various order parameters are crucial for realizing such multifunctional applications, nevertheless, this criterion is rarely met in classical 2D materials at room-temperature. Here an ingenious space-confined chemical vapor deposition strategy is designed to synthesize atomically thin non-layered ε-Fe₂ O₃ single crystals and disclose the room-temperature long-range ferrimagnetic order. Interestingly, the strong ferroelectricity and its switching behavior are unambiguously discovered in atomically thin ε-Fe₂ O₃ , accompanied with an anomalous thickness-dependent coercive voltage. More significantly, the robust room-temperature magnetoelectric coupling is uncovered by controlling the magnetism with electric field and verifies the multiferroic feature of atomically thin ε-Fe₂ O₃ . This work not only represents a substantial leap in terms of the controllable synthesis of 2D multiferroics with robust magnetoelectric coupling, but also provides a crucial step toward the practical applications in low-energy-consumption electric-writing/magnetic-reading devices.

Achieving High-Temperature Multiferroism by Atomic Architecture

Materials with multiple order parameters, typically, in which ferroelectricity and magnetism are coupled, are illuminative for next-generation multifunctional electronics. However, searching for such single-phase multiferroics is challenging owing to antagonistic orbital occupancy and chemical bonding requirements for polarity and magnetism. Appropriate multiferroic candidates have been proposed, but their practical implementation is impeded by the low working temperature, weak coupling between ferroic orders, or antiparallel spin alignment in magnetic sublattices. Here, we report a family of single-phase multiferroic materials in which high-temperature magnetism and voltage-switchable ferroelectricity are coupled. Using pulsed laser deposition, we have fabricated single-crystalline thin films incorporating a uniformly percolated open-shell dⁿ framework, which are composed of Fe cations with B-site occupancy and exhibit long-range spin ordering into the displacive ferroelectric PbTiO₃ lattice, as demonstrated by atomically resolved chemical analysis. The tetragonal polar Pb(Ti_1-x,Fe_x)O₃ (PFT(x), x ≤ 0.10) family exhibits a switchable ferroelectric nature and magnetic interaction with a moderate coercive field of around 300 Oe at room temperature. Notably, the magnetic order even persists above 500 K, which is higher than already reported potential multiferroic candidates until now. Our strategy of merging a spin-ordered sublattice into inherent ferroelectrics via atomic occupancy engineering provides an available pathway for highly thermally stable multiferroic and spintronic applications.

Braiding Lateral Morphotropic Grain Boundaries in Homogenetic Oxides

Interfaces formed by correlated oxides offer a critical avenue for discovering emergent phenomena and quantum states. However, the fabrication of oxide interfaces with variable crystallographic orientations and strain states integrated along a film plane is extremely challenging by conventional layer-by-layer stacking or self-assembling. Here, the creation of morphotropic grain boundaries (GBs) in laterally interconnected cobaltite homostructures is reported. Single-crystalline substrates and suspended ultrathin freestanding membranes provide independent templates for coherent epitaxy and constraint on the growth orientation, resulting in seamless and atomically sharp GBs. Electronic states and magnetic behavior in hybrid structures are laterally modulated and isolated by GBs, enabling artificially engineered functionalities in the planar matrix. This work offers a simple and scalable method for fabricating unprecedented innovative interfaces through controlled synthesis routes as well as providing a platform for exploring potential applications in neuromorphics, solid-state batteries, and catalysis.

Atomically engineered cobaltite layers for robust ferromagnetism

Emergent phenomena at heterointerfaces are directly associated with the bonding geometry of adjacent layers. Effective control of accessible parameters, such as the bond length and bonding angles, offers an elegant method to tailor competing energies of the electronic and magnetic ground states. In this study, we construct unit-thick syntactic layers of cobaltites within a strongly tilted octahedral matrix via atomically precise synthesis. The octahedral tilt patterns of adjacent layers propagate into cobaltites, leading to a continuation of octahedral tilting while maintaining substantial misfit tensile strain. These effects induce severe rumpling within an atomic plane of neighboring layers, further triggering the electronic reconstruction between the splitting orbitals. First-principles calculations reveal that the cobalt ions transit to a higher spin state level upon octahedral tilting, resulting in robust ferromagnetism in ultrathin cobaltites. This work demonstrates a design methodology for fine-tuning the lattice and spin degrees of freedom in correlated quantum heterostructures by exploiting epitaxial geometric engineering.

Time-dependent exchange creates the time-frustrated state of matter

Magnetic systems governed by exchange interactions between magnetic moments harbor frustration that leads to ground state degeneracy and results in the new topological state often referred to as a frustrated state of matter (FSM). The frustration in the commonly discussed magnetic systems has a spatial origin. Here we demonstrate that an array of nanomagnets coupled by the real retarded exchange interactions develops a new state of matter, time frustrated matter (TFM). In a spin system with the time-dependent retarded exchange interaction, a single spin-flip influences other spins not instantly but after some delay. This implies that the sign of the exchange interaction changes, leading to either ferro- or antiferromagnetic interaction, depends on time. As a result, the system’s temporal evolution is essentially non-Markovian. The emerging competition between different magnetic orders leads to a new kind of time-core frustration. To establish this paradigmatic shift, we focus on the exemplary system, a granular multiferroic, where the exchange transferring medium has a pronounced frequency dispersion and hence develops the TFM.

Magnetoelectric transfer of a domain pattern

The utility of ferroic materials is determined by the formation of domains and their poling behavior under externally applied fields. For multiferroics, which exhibit several types of ferroic order at once, it is also relevant how the domains of the coexisting ferroic states couple and what kind of functionality this might involve. In this work, we demonstrate the reversible transfer of a domain pattern between magnetization and electric-polarization space in the multiferroic Dy_0.7Tb_0.3FeO₃. A magnetic field transfers a ferromagnetic domain pattern into an identical ferroelectric domain pattern while erasing it at its magnetic origin. Reverse transfer completes the cycle. To assess the generality of our experiment, we elaborate on its conceptual origin and aspects of application.

Ferroelectric control of band alignments and magnetic properties in the two-dimensional multiferroic VSe2/In2Se3

Our first-principles evidence shows that the two-dimensional (2D) multiferroic VSe₂/In₂Se₃experiences continuous change of electronic structures, i.e. with the change of the ferroelectric (FE) polarization of In₂Se₃, the heterostructure can possess type-I, -II, and -III band alignments. When the FE polarization points from In₂Se₃to VSe₂, the heterostructure has a type-III band alignment, and the charge transfer from In₂Se₃into VSe₂induces half-metallicity. With reversal of the FE polarization, the heterostructure enters the type-I band alignment, and the spin-polarized current is turned off. When the In₂Se₃is depolarized, the heterostructure has a type-II band alignment. In addition, influence of the FE polarization on magnetism and magnetic anisotropy energy of VSe₂was also analyzed, through which we reveal the interfacial magnetoelectric coupling effects. Our investigation about VSe₂/In₂Se₃predicts its wide applications in the fields of both 2D spintronics and multiferroics.

Convert Widespread Paraelectric Perovskite to Ferroelectrics

While nature provides a plethora of perovskite materials, only a few exhibit large ferroelectricity and possibly multiferroicity. The majority of perovskite materials have the nonpolar CaTiO_{3}(CTO) structure, limiting the scope of their applications. Based on the effective Hamiltonian model as well as first-principles calculations, we propose a general thin-film design method to stabilize the functional BiFeO_{3}(BFO)-type structure, which is a common metastable structure in widespread CTO-type perovskite oxides. It is found that the improper antiferroelectricity in CTO-type perovskite and ferroelectricity in BFO-type perovskite have distinct dependences on mechanical and electric boundary conditions, both of which involve oxygen octahedral rotation and tilt. The above difference can be used to stabilize the highly polar BFO-type structure in many CTO-type perovskite materials.

Effect of pulse laser frequency on PLD growth of LuFeO3 explained by kinetic simulations of in-situ diffracted intensities

Atomistic processes during pulsed-laser deposition (PLD) growth influence the physical properties of the resulting films. We investigated the PLD of epitaxial layers of hexagonal LuFeO\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$_3$$\end{document}3 by measuring the X-ray diffraction intensity in the quasiforbidden reflection 0003 in situ during deposition. From measured X-ray diffraction intensities we determined coverages of each layer and studied their time evolution which is described by scaling exponent \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\beta$$\end{document}β directly connected to the surface roughness. Subsequently we modelled the growth using kinetic Monte Carlo simulations. While the experimentally obtained scaling exponent \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\beta$$\end{document}β decreases with the laser frequency, the simulations provided the opposite behaviour. We demonstrate that the increase of the surface temperature caused by impinging ablated particles satisfactorily explains the recorded decrease in the scaling exponent with the laser frequency. This phenomena is often overlooked during the PLD growth.

Strain-Induced Magnetoelectric Coupling in Fe3O4/BaTiO3 Nanopillar Composites

Magnetoelectric coupling properties are limited to the substrate clamping effect in traditional ferroelectric/ferromagnetic heterostructures. Here, Fe₃O₄/BaTiO₃ nanopillar composites are successfully constructed. The well-ordered BaTiO₃ nanopillar arrays are prepared through template-assisted pulsed laser deposition. The Fe₃O₄ layer is coated on BaTiO₃ nanopillar arrays by atomic layer deposition. The nanopillar arrays and heterostructure are confirmed by scanning electron microscopy and transmission electron microscopy. A large thermally driven magnetoelectric coupling coefficient of 395 Oe °C^-1 near the phase transition of BaTiO₃ (orthorhombic to rhombohedral) is obtained, indicating a strong strain-induced magnetoelectric coupling effect. The enhanced magnetoelectric coupling effect originated from the reduced substrate clamping effect and increased the interface area in nanopillar structures. This work opens a door toward cutting-edge potential applications in spintronic devices.

Robotic fabrication of high-quality lamellae for aberration-corrected transmission electron microscopy

Aberration-corrected scanning transmission electron microscopy (STEM) is widely used for atomic-level imaging of materials but severely requires damage-free and thin samples (lamellae). So far, the preparation of the high-quality lamella from a bulk largely depends on manual processes by a skilled operator. This limits the throughput and repeatability of aberration-corrected STEM experiments. Here, inspired by the recent successes of "robot scientists", we demonstrate robotic fabrication of high-quality lamellae by focused-ion-beam (FIB) with automation software. First, we show that the robotic FIB can prepare lamellae with a high success rate, where the FIB system automatically controls rough-milling, lift-out, and final-thinning processes. Then, we systematically optimized the FIB parameters of the final-thinning process for single crystal Si. The optimized Si lamellae were evaluated by aberration-corrected STEM, showing atomic-level images with 55 pm resolution and quantitative repeatability of the spatial resolution and lamella thickness. We also demonstrate robotic fabrication of high-quality lamellae of SrTiO3 and sapphire, suggesting that the robotic FIB system may be applicable for a wide range of materials. The throughput of the robotic fabrication was typically an hour per lamella. Our robotic FIB will pave the way for the operator-free, high-throughput, and repeatable fabrication of the high-quality lamellae for aberration-corrected STEM.

Magnetoelectric phase transition driven by interfacial-engineered Dzyaloshinskii-Moriya interaction

Strongly correlated oxides with a broken symmetry could exhibit various phase transitions, such as superconductivity, magnetism and ferroelectricity. Construction of superlattices using these materials is effective to design crystal symmetries at atomic scale for emergent orderings and phases. Here, antiferromagnetic Ruddlesden-Popper Sr₂IrO₄ and perovskite paraelectric (ferroelectric) SrTiO₃ (BaTiO₃) are selected to epitaxially fabricate superlattices for symmetry engineering. An emergent magnetoelectric phase transition is achieved in Sr₂IrO₄/SrTiO₃ superlattices with artificially designed ferroelectricity, where an observable interfacial Dzyaloshinskii-Moriya interaction driven by non-equivalent interface is considered as the microscopic origin. By further increasing the polarization namely interfacial Dzyaloshinskii-Moriya interaction via replacing SrTiO₃ with BaTiO₃, the transition temperature can be enhanced from 46 K to 203 K, accompanying a pronounced magnetoelectric coefficient of ~495 mV/cm·Oe. This interfacial engineering of Dzyaloshinskii-Moriya interaction provides a strategy to design quantum phases and orderings in correlated electron systems.

Magnetoelectric effect: principles and applications in biology and medicine- a review

Magnetoelectric (ME) effect experimentally discovered about 60 years ago remains one of the promising research fields with the main applications in microelectronics and sensors. However, its applications to biology and medicine are still in their infancy. For the diagnosis and treatment of diseases at the intracellular level, it is necessary to develop a maximally non-invasive way of local stimulation of individual neurons, navigation, and distribution of biomolecules in damaged cells with relatively high efficiency and adequate spatial and temporal resolution. Recently developed ME materials (composites), which combine elastically coupled piezoelectric (PE) and magnetostrictive (MS) phases, have been shown to yield very strong ME effects even at room temperature. This makes them a promising toolbox for solving many problems of modern medicine. The main ME materials, processing technologies, as well as most prospective biomedical applications will be overviewed, and modern trends in using ME materials for future therapies, wireless power transfer, and optogenetics will be considered.

Ferroelectricity and Ferromagnetism Achieved via Adjusting Dimensionality in BiFeO3/BiMnO3 Superlattices

Integrating characteristics of materials through constructing artificial superlattices (SLs) has raised extensive attention in multifunctional materials. Here, we report the synthesis of BiFeO₃/BiMnO₃ SLs with considerable ferroelectric polarizations and tunable magnetic moments. The polarization of BiFeO₃/BiMnO₃ SLs presents a decent value of 12 μC/cm², even as the dimensionality of BiFeO₃ layers per period is reduced to about five-unit cells when keeping the BiMnO₃ layers same. Moreover, it is found that the tunable magnetic moments of SLs are linked intimately to the dimensionality of BiFeO₃ layers. Our simulations demonstrate that the superexchange interaction of Fe-O-Mn tends to be antiferromagnetic (AFM) with a lower magnetic domain formation energy rather than ferromagnetic (FM). Therefore, as the dimensionality of BiFeO₃ per period is reduced, the AFM superexchange interaction between BiFeO₃ and BiMnO₃ in the SLs becomes weak, promoting a robust magnetization. This interlayer modulation effect in SLs presents an alluring way to accurately control the multiple order parameters in a multiferroic oxide system.

Enhanced strain-induced magnetoelectric coupling in polarization-free Fe/BaTiO3 heterostructures

The search for magnetoelectric materials typically revolves around the struggle to make magnetic and ferroelectric orders simultaneously coexist in the same material, using either an intrinsic or an extrinsic/composite approach. Via ab initio calculations of a prototypical Fe/BaTiO3 interface, we predict that it is possible to tune the magnitude of the individual magnetic moments even for non-polar BaTiO3. By comparing polar and non-polar Fe/BaTiO3 heterostructures, we show that the Fe, Ti and equatorial O atomic magnetic moments are induced and enhanced as a result of their local crystal field. The crystal field may be controlled solely by manipulation of the inter-atomic distances of their neighbouring atoms (which will affect their electrostatic fields and orbital hybridizations), or by the BaTiO3 electric dipole moments, working as a local polarization. When this polarization is present, it dominates the crystal field contributions, thus constraining the effects of other perturbations such as strain. We also find that, contrary to conventional expectations, the non-polar heterostructure shows higher strain induced magnetization sensitivity than its polar counterpart.

Electric field control of magnetism

Electric field control of magnetism is an extremely exciting area of research, from both a fundamental science and an applications perspective and has the potential to revolutionize the world of computing. To realize this will require numerous further innovations, both in the fundamental science arena as well as translating these scientific discoveries into real applications. Thus, this article will attempt to bridge the gap between condensed matter physics and the actual manifestations of the physical concepts into applications. We have attempted to paint a broad-stroke picture of the field, from the macroscale all the way down to the fundamentals of spin–orbit coupling that is a key enabler of the physics discussed. We hope it will help spur more translational research within the broad materials physics community. Needless to say, this article is written on behalf of a large number of colleagues, collaborators and researchers in the field of complex oxides as well as current and former students and postdocs who continue to pursue cutting-edge research in this field.

In situmonitoring of epitaxial ferroelectric thin-film growth

In ferroelectric thin films, the polarization state and the domain configuration define the macroscopic ferroelectric properties such as the switching dynamics. Engineering of the ferroelectric domain configuration during synthesis is in permanent evolution and can be achieved by a range of approaches, extending from epitaxial strain tuning over electrostatic environment control to the influence of interface atomic termination. Exotic polar states are now designed in the technologically relevant ultrathin regime. The promise of energy-efficient devices based on ultrathin ferroelectric films depends on the ability to create, probe, and manipulate polar states in ever more complex epitaxial architectures. Because most ferroelectric oxides exhibit ferroelectricity during the epitaxial deposition process, the direct access to the polarization emergence and its evolution during the growth process, beyond the realm of existing structuralin situdiagnostic tools, is becoming of paramount importance. We review the recent progress in the field of monitoring polar states with an emphasis on the non-invasive probes allowing investigations of polarization during the thin film growth of ferroelectric oxides. A particular importance is given to optical second harmonic generationin situ. The ability to determine the net polarization and domain configuration of ultrathin films and multilayers during the growth of multilayers brings new insights towards a better understanding of the physics of ultrathin ferroelectrics and further control of ferroelectric-based heterostructures for devices.

Periodic nanostructures: preparation, properties and applications

Periodic nanostructures, a group of nanomaterials consisting of single or multiple nano units/components periodically arranged into ordered patterns (e.g., vertical and lateral superlattices), have attracted tremendous attention in recent years due to their extraordinary physical and chemical properties that offer a huge potential for a multitude of applications in energy conversion, electronic and optoelectronic applications. Recent advances in the preparation strategies of periodic nanostructures, including self-assembly, epitaxy, and exfoliation, have paved the way to rationally modulate their ferroelectricity, superconductivity, band gap and many other physical and chemical properties. For example, the recent discovery of superconductivity observed in "magic-angle" graphene superlattices has sparked intensive studies in new ways, creating superlattices in twisted 2D materials. Recent development in the various state-of-the-art preparations of periodic nanostructures has created many new ideas and findings, warranting a timely review. In this review, we discuss the current advances of periodic nanostructures, including their preparation strategies, property modulations and various applications.

Engineering new limits to magnetostriction through metastability in iron-gallium alloys

Magnetostrictive materials transduce magnetic and mechanical energies and when combined with piezoelectric elements, evoke magnetoelectric transduction for high-sensitivity magnetic field sensors and energy-efficient beyond-CMOS technologies. The dearth of ductile, rare-earth-free materials with high magnetostrictive coefficients motivates the discovery of superior materials. Fe_1-xGa_x alloys are amongst the highest performing rare-earth-free magnetostrictive materials; however, magnetostriction becomes sharply suppressed beyond x = 19% due to the formation of a parasitic ordered intermetallic phase. Here, we harness epitaxy to extend the stability of the BCC Fe_1-xGa_x alloy to gallium compositions as high as x = 30% and in so doing dramatically boost the magnetostriction by as much as 10x relative to the bulk and 2x larger than canonical rare-earth based magnetostrictors. A Fe_1-xGa_x - [Pb(Mg_1/3Nb_2/3)O₃]_0.7-[PbTiO₃]_0.3 (PMN-PT) composite magnetoelectric shows robust 90° electrical switching of magnetic anisotropy and a converse magnetoelectric coefficient of 2.0 × 10^-5 s m^-1. When optimally scaled, this high coefficient implies stable switching at ~80 aJ per bit.

Dimensionality-Induced Change in Topological Order in Multiferroic Oxide Superlattices

We construct ferroelectric (LuFeO_{3})_{m}/(LuFe_{2}O_{4}) superlattices with varying index m to study the effect of confinement on topological defects. We observe a thickness-dependent transition from neutral to charged domain walls and the emergence of fractional vortices. In thin LuFeO_{3} layers, the volume fraction of domain walls grows, lowering the symmetry from P6_{3}cm to P3c1 before reaching the nonpolar P6_{3}/mmc state, analogous to the group-subgroup sequence observed at the high-temperature ferroelectric to paraelectric transition. Our study shows how dimensional confinement stabilizes textures beyond those in bulk ferroelectric systems.

Room-Temperature Magnetoelectric Coupling in Electronic Ferroelectric Film based on [(n-C3H7)4N][FeIIIFeII(dto)3] (dto = C2O2S2)

Great importance has been attached to magnetoelectric coupling in multiferroic thin films owing to their extremely practical use in a new generation of devices. Here, a film of [(n-C₃H₇)₄N][Fe^IIIFe^II(dto)₃] (1; dto = C₂O₂S₂) was fabricated using a simple stamping process. As was revealed by our experimental results, in-plane ferroelectricity over a wide temperature range from 50 to 300 K was induced by electron hopping between Fe^II and Fe^III sites. This mechanism was further confirmed by the ferroelectric observation of the compound [(n-C₃H₇)₄N][Fe^IIIZn^II(dto)₃] (2; dto = C₂O₂S₂), in which Fe^II ions were replaced by nonmagnetic metal Zn^II ions, resulting in no obvious ferroelectric polarization. However, both ferroelectricity and magnetism are related to the magnetic Fe ions, implying a strong magnetoelectric coupling in 1. Through piezoresponse force microscopy (PFM), the observation of magnetoelectric coupling was achieved by manipulating ferroelectric domains under an in-plane magnetic field. The present work not only provides new insight into the design of molecular-based electronic ferroelectric/magnetoelectric materials but also paves the way for practical applications in a new generation of electronic devices.

Strain-driven autonomous control of cation distribution for artificial ferroelectrics

In past few decades, there have been substantial advances in theoretical material design and experimental synthesis, which play a key role in the steep ascent of developing functional materials with unprecedented properties useful for next-generation technologies. However, the ultimate goal of synthesis science, i.e., how to locate atoms in a specific position of matter, has not been achieved. Here, we demonstrate a unique way to inject elements in a specific crystallographic position in a composite material by strain engineering. While the use of strain so far has been limited for only mechanical deformation of structures or creation of elemental defects, we show another powerful way of using strain to autonomously control the atomic position for the synthesis of new materials and structures. We believe that our synthesis methodology can be applied to wide ranges of systems, thereby providing a new route to functional materials.

2D Polarized Materials: Ferromagnetic, Ferrovalley, Ferroelectric Materials, and Related Heterostructures

The emergence of 2D polarized materials, including ferromagnetic, ferrovalley, and ferroelectric materials, has demonstrated unique quantum behaviors at atomic scales. These polarization behaviors are tightly bonded to the new degrees of freedom (DOFs) for next generation information storage and processing, which have been dramatically developed in the past few years. Here, the basic 2D polarized materials system and related devices' application in spintronics, valleytronics, and electronics are reviewed. Specifically, the underlying physical mechanism accompanied with symmetry broken theory and the modulation process through heterostructure engineering are highlighted. These summarized works focusing on the 2D polarization would continue to enrich the cognition of 2D quantum system and promising practical applications.

Eu-Mn Charge Transfer and the Strong Charge-Spin-Electronic Coupling Behavior in EuMnO3

Based on first-principles calculations with the DFT + U method, the couplings of lattice, charge, spin, and electronic behaviors underlying the Eu-Mn charge transfer in a strongly correlated system of EuMnO₃ were investigated. The potential valence transition from Eu³⁺/Mn³⁺ to Eu²⁺/Mn⁴⁺ was observed in a compressed lattice with little distortions, which is achieved under hydrostatic pressure and external strain. The intraplane antiferromagnetism (AFM) of Mn is proved to be instrumental in the emergence of Eu²⁺. Furthermore, we calculated the magnetic exchange interactions within two equilibrium structures of Eu³⁺Mn³⁺O₃ and Eu²⁺Mn⁴⁺O₃. Mn-Mn ferromagnetic exchange in the ab-plane is enhanced strongly in the Eu²⁺Mn⁴⁺O₃ structure, contributing to the existence of mixed states. The versatile electronic structures were obtained within the Eu²⁺Mn⁴⁺O₃ phase by imposing different magnetic configurations on the Eu and Mn sublattice, attributed to the coupling of charge transfer and magnetic orderings. It is found that the intraplane ferromagnetic ordering of Mn leads to a metallic electronic structure with the coexistence of Eu²⁺ and Eu³⁺, while the intraplane AFM Mn spin ordering leads to insulating states only with Eu²⁺. Notably, a half-metallic characteristic emerges at the magnetic ground state of CF ordering (C-type AFM for the Eu sublattice and ferromagnetic for the Mn sublattice), which makes such a supposed phase more intriguing than the conventional experimental phase. Additionally, the mixture of delocalized 4f with 5d states of Eu in the background of Mn 3d and O 2p orbitals implies a pathway of Eu 4f 5d ↔ O 2p ↔ Mn 3d for charge transfer between Eu and Mn. Our calculation shows that the Eu-Mn charge transfer could be expected in compressed EuMnO₃ and the introduction of Eu²⁺ 4f states near the Fermi level plays an important role in manipulating the interlinks of charge and spin together with electronic behaviors.

Exploring physics of ferroelectric domain walls via Bayesian analysis of atomically resolved STEM data

The physics of ferroelectric domain walls is explored using the Bayesian inference analysis of atomically resolved STEM data. We demonstrate that domain wall profile shapes are ultimately sensitive to the nature of the order parameter in the material, including the functional form of Ginzburg-Landau-Devonshire expansion, and numerical value of the corresponding parameters. The preexisting materials knowledge naturally folds in the Bayesian framework in the form of prior distributions, with the different order parameters forming competing (or hierarchical) models. Here, we explore the physics of the ferroelectric domain walls in BiFeO₃ using this method, and derive the posterior estimates of relevant parameters. More generally, this inference approach both allows learning materials physics from experimental data with associated uncertainty quantification, and establishing guidelines for instrumental development answering questions on what resolution and information limits are necessary for reliable observation of specific physical mechanisms of interest.

Ferroelectric domain wall profiles can be modeled by phenomenological Ginzburg-Landau theory, with different candidate models and parameters. Here, the authors solve the problem of model selection by developing a Bayesian inference framework allowing for uncertainty quantification and apply it to atomically resolved images of walls. This analysis can also predict the level of microscope performance needed to detect specific physical phenomena.

Site-specific spectroscopic measurement of spin and charge in (LuFeO3)m/(LuFe2O4)1 multiferroic superlattices

Interface materials offer a means to achieve electrical control of ferrimagnetism at room temperature as was recently demonstrated in (LuFeO3)m/(LuFe2O4)1 superlattices. A challenge to understanding the inner workings of these complex magnetoelectric multiferroics is the multitude of distinct Fe centres and their associated environments. This is because macroscopic techniques characterize average responses rather than the role of individual iron centres. Here, we combine optical absorption, magnetic circular dichroism and first-principles calculations to uncover the origin of high-temperature magnetism in these superlattices and the charge-ordering pattern in the m = 3 member. In a significant conceptual advance, interface spectra establish how Lu-layer distortion selectively enhances the Fe2+ →  Fe3+ charge-transfer contribution in the spin-up channel, strengthens the exchange interactions and increases the Curie temperature. Comparison of predicted and measured spectra also identifies a non-polar charge ordering arrangement in the LuFe2O4 layer. This site-specific spectroscopic approach opens the door to understanding engineered materials with multiple metal centres and strong entanglement.

Ferroelectric Switching of Pure Spin Polarization in Two-Dimensional Electron Gas

Two-dimensional electron gas (2DEG) created at compound interfaces can exhibit a broad range of exotic physical phenomena, including quantum Hall phase, emergent ferromagnetism, and superconductivity. Although electron spin plays key roles in these phenomena, the fundamental understanding and application prospects of such emergent interfacial states have been largely impeded by the lack of purely spin-polarized 2DEG. In this work, by first-principles calculations of the multiferroic superlattice GeTe/MnTe, we find the ferroelectric polarization of GeTe is concurrent with the half-metallic 2DEG at interfaces. Remarkably, the pure spin polarization of the 2DEG can be created and annihilated by polarizing and depolarizing the ferroelectrics and can be switched (between pure spin-up and pure spin-down) by flipping the ferroelectric polarization. Given the electric-field amplification effect of ferroelectric electronics, we envision multiferroic superlattices could open up new opportunities for low-power, high-efficiency spintronic devices such as spin field-effect transistors.

Engineered Layer-Stacked Interfaces Inside Aurivillius-Type Layered Oxides Enables Superior Ferroelectric Property

Layer engineering with different layer numbers inside Aurivillius-type layered structure, similar to interface engineering in heterojunctions or superlattices, can give rise to excellent physical properties due to the correlated layer-stacked interfaces of two different layer phases with different strain states. In this work, using the solid-state reactions from Aurivillius-type Bi3TiNbO9 (2-layer) and Bi4Ti3O12 (3-layer) ferroelectric powder mixtures, single-phase compound of Bi7Ti4NbO21 with an intergrowth structure of 2-layer and 3-layer perovskite slabs sandwiched between the Bi-O layers was synthesized and the effects of this layer-engineered strategy on the structure, Raman-vibration and ferroelectric properties were systematically investigated. The mostly-ordered intergrowth phase was observed clearly by utilizing X-ray diffraction and advanced electron micro-techniques. Uniformly dispersions and collaborative vibrations of Ti and Nb ions in the layer-engineered Bi7Ti4NbO21 were demonstrated. Remarkably, dielectric and ferroelectric properties were also recorded and an enhanced ferroelectric response was found in the layer-engineered mixed-layer sample with high ferroelectric Curie temperature, compared with the homogeneous 2-layer and 3-layer samples. Analyses of the Raman spectra and atomic structures confirmed that the performance improvement of the layer-engineered sample is intrinsic to the correlated layer-stacked interfaces inside the Aurivillius-type layered oxides, arising from strain-induced lattice distortions at the interfaces.

Deterministic reversal of single magnetic vortex circulation by an electric field

The ability to control magnetic vortex is critical for their potential applications in spintronic devices. Traditional methods including magnetic field, spin-polarized current etc. have been used to flip the core and/or reverse circulation of vortex. However, it is challenging for deterministic electric-field control of the single magnetic vortex textures with time-reversal broken symmetry and no planar magnetic anisotropy. Here it is reported that a deterministic reversal of single magnetic vortex circulation can be driven back and forth by a space-varying strain in multiferroic heterostructures, which is controlled by using a bi-axial pulsed electric field. Phase-field simulation reveals the mechanism of the emerging magnetoelastic energy with the space variation and visualizes the reversal pathway of the vortex. This deterministic electric-field control of the single magnetic vortex textures demonstrates a new approach to integrate the low-dimensional spin texture into the magnetoelectric thin film devices with low energy consumption.

Metal-Halide Perovskite Design for Next-Generation Memories: First-Principles Screening and Experimental Verification

Memory devices have been advanced so much, but still it is highly required to find stable and reliable materials with low-power consumption. Halide perovskites (HPs) have been recently adopted for memory application since they have advantages of fast switching based on ionic motion in crystal structure. However, HPs also suffer from poor stability, so it is necessary to improve the stability of HPs. In this regard, combined first-principles screening and experimental verification are performed to design HPs that have high environmental stability and low-operating voltage for memory devices. First-principles screening identifies 2D layered AB2X5 structure as the best candidate switching layer for memory devices, because it has lower formation energy and defect formation energy than 3D ABX3 or other layered structures (A3B2X7, A2BX4). To verify results, all-inorganic 2D layered CsPb2Br5 is synthesized and used in memory devices. The memory devices that use CsPb2Br5 show much better stability and lower operating voltages than devices that use CsPbBr3. These findings are expected to provide new opportunity to design materials for reliable device applications based on calculation, screening, and experimental verification.

Constructing Asymmetrical Ni-Centered {NiN2O4} Octahedra in Layered Metal-Organic Structures for Near-Room-Temperature Single-Phase Magnetoelectricity

Layered metal-organic structures (LMOSs) as magnetoelectric (ME) multiferroics have been of great importance for realizing new functional devices in nanoelectronics. Until now, however, achieving such room-temperature and single-phase ME multiferroics in LMOSs have proven challenging due to low transition temperature, poor spontaneous polarization, and weak ME coupling effect. Here, we demonstrate the construction of a LMOS in which four Ni-centered {NiN₂O₄} octahedra form in layer with asymmetric distortions using the coordination bonds between diphenylalanine molecules and transition metal Ni(II). Near room-temperature (283 K) ferroelectricity and ferromagnetism are observed to be both spontaneous and hysteretic. Particularly, the multiferroic LMOS exhibits strong magnetic-field-dependent ME polarization with low-magnetic-field control. The change in ME polarization with increasing applied magnetic field μ₀H from 0 to 2 T decreases linearly from 0.041 to 0.011 μC/cm² at the strongest ME coupling temperature of 251 K. The magnetic domains can be manipulated directly by applied electric field at 283 K. The asymmetrical distortion of Ni-centered octahedron in layer spurs electric polarization and ME effect and reduces spin frustration in the octahedral geometry due to spin-charge-orbital coupling. Our results represent an important step toward the production of room-temperature single-phase organic ME multiferroics.

Hexagonal rare-earth manganites and ferrites: a review of improper ferroelectricity, magnetoelectric coupling, and unusual domain walls

Hexagonal rare-earth manganites and ferrites are well-known improper ferroelectrics with low-temperature antiferromagnetism/weak ferromagnetism. In recent decades, new multi-functional device concepts and applications have provoked the exploration for multiferroics which simultaneously possess ferroelectric and magnetic orders. As a promising platform for multiferroicity, hexagonal manganites and ferrites are attracting great research interest among the fundamental scientific and technological communities. Moreover, the novel type of vortex-like ferroelectric domain walls are locked to the antiphase structural domain walls, providing an extra degree of freedom to tune the magnetoelectric coupling and other properties such as conductance. Here, we summarize the main experimental achievements and up-to-date theoretical understanding of the ferroelectric, magnetic, and magnetoelectric properties, as well as the intriguing domain patterns in hexagonal rare-earth manganites and ferrites. Recent work on non-stoichiometric compounds will also be briefly introduced.

Tuning ferroelectricity and ferromagnetism in BiFeO3/BiMnO3 superlattices

Multiferroic materials with multifunctional characteristics play a critical role in the field of microelectronics. In a perovskite oxide, ferroelectric polarization and ferromagnetism usually cannot coexist in a single-phase material at the same time. In this work, we design a superlattice structure composed of alternating BiFeO₃ and BiMnO₃ layers and illustrate how tuning the supercell size of epitaxial BiFeO₃/BiMnO₃ superlattices facilitates ferroelectric polarization while maintaining relatively strong ferromagnetism. A comprehensive investigation reveals that the enhanced ferroelectric polarization of BiMnO₃ layers originates from the induction effect induced by a strong polarization field generated by the adjacent ferroelectric BiFeO₃ layers. For the magnetic behavior, we consider the existence of interfacial antiferromagnetic superexchange interaction of Fe-O-Mn between BiFeO₃ and BiMnO₃ layers in our superlattices. This modulation effect of artificial superlattices provides a platform to accurately control the multiple order parameters in a multiferroic oxide system.

Multiferroics beyond electric-field control of magnetism

Multiferroic materials, with their combined and coupled magnetism and ferroelectricity, provide a playground for studying new physics and chemistry as well as a platform for the development of novel devices and technologies. Based on my July 2017 Royal Society Inaugural Lecture, I review recent progress and propose future directions in the fundamentals and applications of multiferroics, with a focus on initially unanticipated developments outside of the core activity of electric-field control of magnetism.

Magnetic and electrical properties of LuFe2O4 epitaxial thin films with a self-assembled interface structure

Thin film of LuFe₂O₄, one of multiferroics, deposited on an yttria-stabilized zirconia substrate shows a unique interface structure, leading to an exchange bias effect. The thin film itself undergoes spin glass or cluster glass transition.

The ultrathin limit of improper ferroelectricity

The secondary nature of polarization in improper ferroelectrics promotes functional properties beyond those of conventional ferroelectrics. In technologically relevant ultrathin films, however, the improper ferroelectric behavior remains largely unexplored. Here, we probe the emergence of the coupled improper polarization and primary distortive order parameter in thin films of hexagonal YMnO₃. Combining state-of-the-art in situ characterization techniques separately addressing the improper ferroelectric state and its distortive driving force, we reveal a pronounced thickness dependence of the improper polarization, which we show to originate from the strong modification of the primary order at epitaxial interfaces. Nanoscale confinement effects on the primary order parameter reduce the temperature of the phase transition, which we exploit to visualize its order-disorder character with atomic resolution. Our results advance the understanding of the evolution of improper ferroelectricity within the confinement of ultrathin films, which is essential for their successful implementation in nanoscale applications.

Evolution of improper ferroelectricity within the confinement of ultrathin films is essential for their successful implementation in nanoscale applications. Here, the authors show thickness dependence of the improper polarization originating from the strong modification of the primary order at epitaxial interfaces.

Real-time studies of ferroelectric domain switching: a review

Ferroelectric materials have been utilized in a broad range of electronic, optical, and electromechanical applications and hold the promise for the design of future high-density nonvolatile memories and multifunctional nano-devices. The applications of ferroelectric materials stem from the ability to switch polarized domains by applying an electric field, and therefore a fundamental understanding of the switching dynamics is critical for design of practical devices. In this review, we summarize the progress in the study of the microscopic process of ferroelectric domain switching using recently developed in situ transmission electron microscopy (TEM). We first briefly introduce the instrumentation, experimental procedures, imaging mechanisms, and analytical methods of the state-of-the-art in situ TEM techniques. The application of these techniques to studying a wide range of complex switching phenomena, including domain nucleation, domain wall motion, domain relaxation, domain-defect interaction, and the interplay between different types of domains, is demonstrated. The underlying physics of these dynamic processes are discussed.