Madelung and Hubbard interactions in polaron band model of doped organic semiconductors

Effects of Planarization of the Triphenylamine Unit on the Electronic and Transport Properties of Triarylamine-Fluorene Copolymers in Both Doped and Undoped Forms

Triarylamine-alt-fluorene (TAF) copolymers are widely used for hole injection and transport in organic electronics. Despite suggestions to planarize the triphenylamine moiety, little research has been conducted. Here, we report a comprehensive investigation of the effects of planarization on the electronic and transport properties of a model TAF polymer semiconductor core. We compared the conventional twisted-propeller N-4-methoxyphenyl-N,N-diphenylamine-4',4″-diyl (TA) unit and its planarized bridged analogue (bTA) where adjacent o,o'-positions are linked by 1,1-dimethylmethylene. We studied both polyelectrolyte and non-polyelectrolyte forms of this core in both doped and undoped states. We found that planarization leads to an unprecedented trap-free transport of holes, and a pronounced enhancement of their mobility in the undoped state though less so in the doped state. Planarization also induces a slight reduction in the ionization energy of the undoped polymer, consequently lowering the work function of the doped polymer. This is accompanied by small spectral shifts: a red shift in the first absorption band of the undoped polymer and a blue shift in the first absorption band of the polaron. Furthermore, this study unveils new fundamental features of TAF polymers: (i) Doping induces the formation of three polaron bands within the subgap. (ii) Absorption of both neutral and polaron segments exhibit a linear intensity relationship with doping level. (iii) Electrical conductivity reaches a maximum at the half-doped state, varying as σ ∼ (x (1 - x))3 for 0.1 ≲ x ≲ 0.9, where x is the doping level. Finally, we demonstrate the successful integration of these self-compensated hole-doped TAF polymers as efficient hole injection layers in organic semiconductor diodes.

Does the Traditional Band Picture Describe the Electronic Structure of Doped Conjugated Polymers? TD-DFT and Natural Transition Orbital Study of Doped P3HT

Polarons and bipolarons are created when one or two electrons are removed from the π-system of a p-type conjugated polymer, respectively. In the traditional band picture, the creation of a polaron causes two electronic energy levels to move into the band gap. The removal of a second electron to form a bipolaron causes the two intragap states to move further into the gap. Several groups, however, who looked at the energies of the Kohn-Sham orbitals from DFT calculations, have recently argued that the traditional band picture is incorrect for explaining the spectroscopy of doped conjugated polymers. Instead, the DFT calculations suggest that polaron creation causes only one unoccupied state to move into the band gap near the valence band edge while half-filled state in the valence band and the conduction band bend downward in energy. To understand the discrepancy, we performed TD-DFT calculations of polarons and bipolarons on poly(3-hexylthiophene) (P3HT). Not only do the TD-DFT-calculated absorption spectra match the experimental absorption spectra, but an analysis using natural transitional orbitals (NTOs), which provides an approximate one-electron picture from the many-electron TD-DFT results, supports the traditional band picture. Our TD-DFT/NTO analysis indicates that the traditional band picture also works for bipolarons, a system for which DFT calculations were unable to determine the electronic structure.

Water binding and hygroscopicity in π-conjugated polyelectrolytes

The presence of water strongly influences structure, dynamics and properties of ion-containing soft matter. Yet, the hydration of such matter is not well understood. Here, we show through a large study of monovalent π-conjugated polyelectrolytes that their reversible hydration, up to several water molecules per ion pair, occurs chiefly at the interface between the ion clusters and the hydrophobic matrix without disrupting ion packing. This establishes the appropriate model to be surface hydration, not the often-assumed internal hydration of the ion clusters. Through detailed analysis of desorption energies and O-H vibrational frequencies, together with OPLS4 and DFT calculations, we have elucidated key binding motifs of the sorbed water. Type-I water, which desorbs below 50 °C, corresponds to hydrogen-bonded water clusters constituting secondary hydration. Type-II water, which typically desorbs over 50-150 °C, corresponds to water bound to the anion under the influence of a proximal cation, or to a cation‒anion pair, at the cluster surface. This constitutes primary hydration. Type-III water, which irreversibly desorbs beyond 150 °C, corresponds to water kinetically trapped between ions. Its amount varies strongly with processing and heat treatment. As a consequence, hygroscopicity-which is the water sorption capacity per ion pair-depends not only on the ions, but also their cluster morphology.

Double-type-I charge-injection heterostructure for quantum-dot light-emitting diodes

Enforcing balanced electron-hole injection into the emitter layer of quantum-dot light-emitting diodes (QLEDs) remains key to maximizing the quantum efficiency over a wide current density range. This was previously thought not possible for quantum dot (QD) emitters because of their very deep energy bands. Here, we show using Mesolight® blue-emitting CdZnSeS/ZnS QDs as a model that its valence levels are in fact considerably shallower than the corresponding band maximum of the bulk semiconductor, which makes the ideal double-type-I injection/confinement heterostructure accessible using a variety of polymer organic semiconductors as transport and injection layers. We demonstrate flat external quantum efficiency characteristics that indicate near perfect recombination within the QD layer over several decades of current density from the onset of device turn-on of about 10 μA cm^-2, for both normal and inverted QLED architectures. We also demonstrate that these organic semiconductors do not chemically degrade the QDs, unlike the usual ZnMgO nanoparticles. However, these more efficient injection heterostructures expose a new vulnerability of the QDs to in device electrochemical degradation. The work here opens a clear path towards next-generation ultra-high-performance, all-solution-processed QLEDs.

Ion-modulated radical doping of spiro-OMeTAD for more efficient and stable perovskite solar cells

Record power conversion efficiencies (PCEs) of perovskite solar cells (PSCs) have been obtained with the organic hole transporter 2,2',7,7'-tetrakis(N,N-di-p-methoxyphenyl-amine)9,9'-spirobifluorene (spiro-OMeTAD). Conventional doping of spiro-OMeTAD with hygroscopic lithium salts and volatile 4-tert-butylpyridine is a time-consuming process and also leads to poor device stability. We developed a new doping strategy for spiro-OMeTAD that avoids post-oxidation by using stable organic radicals as the dopant and ionic salts as the doping modulator (referred to as ion-modulated radical doping). We achieved PCEs of >25% and much-improved device stability under harsh conditions. The radicals provide hole polarons that instantly increase the conductivity and work function (WF), and ionic salts further modulate the WF by affecting the energetics of the hole polarons. This organic semiconductor doping strategy, which decouples conductivity and WF tunability, could inspire further optimization in other optoelectronic devices.

Use of a Multiple Hydride Donor To Achieve an n-Doped Polymer with High Solvent Resistance

The ability to insolubilize doped semiconducting polymer layers can help enable the fabrication of efficient multilayer solution-processed electronic and optoelectronic devices. Here, we present a promising approach to simultaneously n-dope and largely insolubilize conjugated polymer films using tetrakis[{4-(1,3-dimethyl-2,3-dihydro-1H-benzo[d]imidazol-2-yl)phenoxy}methyl]methane (tetrakis-O-DMBI-H), which consists of four 2,3-dihydro-1H-benzoimidazole (DMBI-H) n-dopant moieties covalently linked to one another. Doping a thiophene-fused benzodifurandione-based oligo(p-phenylenevinylene)-co-thiophene polymer (TBDOPV-T) with tetrakis-O-DMBI-H results in a highly n-doped film with bulk conductivity of 15 S cm^-1. Optical absorption spectra provide evidence for film retention of ∼93% after immersion in o-dichlorobenzene for 5 min. The optical absorption signature of the charge carriers in the n-doped polymer decreases only slightly more than that of the neutral polymer under these conditions, indicating that the exposure to solvent also results in negligible dedoping of the film. Moreover, thermal treatment studies on a tetrakis-O-DMBI-H-doped TBDOPV-T film in contact with another undoped polymer film indicate immobilization of the molecular dopant in TBDOPV-T. This is attributed to the multiple electrostatic interactions between each dopant tetracation and up to four nearby anionic doped polymer segments.

Role of Linker Functionality in Polymers Exhibiting Main-Chain Thermally Activated Delayed Fluorescence

Excellent performance has been reported for organic light-emitting diodes (OLEDs) based on small molecule emitters that exhibit thermally activated delayed fluorescence. However, the necessary vacuum processing makes the fabrication of large-area devices based on these emitters cumbersome and expensive. Here, the authors present high performance OLEDs, based on novel, TADF polymers that can be readily processed from a solution. These polymers are based on the acridine-benzophenone donor-acceptor motif as main-chain TADF chromophores, linked by various conjugated and non-conjugated spacer moieties. The authors' extensive spectroscopic and electronic analysis shows that in particular in case of alkyl spacers, the properties and performance of the monomeric TADF chromophores are virtually left unaffected by the polymerization. They present efficient solution-processed OLEDs based on these TADF polymers, diluted in oligostyrene as a host. The devices based on the alkyl spacer-based TADF polymers exhibit external quantum efficiencies (EQEs) ≈12%, without any outcoupling-enhancing measures. What's more, the EQE of these devices does not drop substantially upon diluting the polymer down to only ten weight percent of active material. In contrast, the EQE of devices based on the monomeric chromophore show significant losses upon dilution due to loss of charge percolation.

High-Efficiency Ion-Exchange Doping of Conducting Polymers

Molecular doping-the use of redox-active small molecules as dopants for organic semiconductors-has seen a surge in research interest driven by emerging applications in sensing, bioelectronics, and thermoelectrics. However, molecular doping carries with it several intrinsic problems stemming directly from the redox-active character of these materials. A recent breakthrough was a doping technique based on ion-exchange, which separates the redox and charge compensation steps of the doping process. Here, the equilibrium and kinetics of ion exchange doping in a model system, poly(2,5-bis(3-alkylthiophen-2-yl)thieno(3,2-b)thiophene) (PBTTT) doped with FeCl₃ and an ionic liquid, is studied, reaching conductivities in excess of 1000 S cm^-1 and ion exchange efficiencies above 99%. Several factors that enable such high performance, including the choice of acetonitrile as the doping solvent, which largely eliminates electrolyte association effects and dramatically increases the doping strength of FeCl₃ , are demonstrated. In this high ion exchange efficiency regime, a simple connection between electrochemical doping and ion exchange is illustrated, and it is shown that the performance and stability of highly doped PBTTT is ultimately limited by intrinsically poor stability at high redox potential.

Recent Progress on Addressing the Key Challenges in Organic Thermoelectrics

Compared with inorganic thermoelectric materials, organic thermoelectric (OTE) materials have attracted increasing attention due to their advantages of low toxicity, high mechanical flexibility, and large-scale solution processability. In the past few years, OTE materials have made remarkable progress in terms of their design, synthesis, and device performance. However, some challenges remain, including the low doping efficiency in n-type materials, poor doping stability with molecular dopants, and the largely reduced Seebeck coefficient after heavily doping, etc. All these factors hinder the further development of OTEs for commercial applications. In this Minireview, we highlight several key challenges during the development of OTEs and summarize recent understandings and efforts to address these challenges.

Overcoming the water oxidative limit for ultra-high-workfunction hole-doped polymers

It is widely thought that the water-oxidation reaction limits the maximum work function to about 5.25 eV for hole-doped semiconductors exposed to the ambient, constrained by the oxidation potential of air-saturated water. Here, we show that polymer organic semiconductors, when hole-doped, can show work functions up to 5.9 eV, and yet remain stable in the ambient. We further show that de-doping of the polymer is not determined by the oxidation of bulk water, as previously thought, due to its general absence, but by the counter-balancing anion and its ubiquitously hydrated complexes. The effective donor levels of these species, representing the edge of the 'chemical' density of states, can be depressed to about 6.0 eV below vacuum level. This can be achieved by raising the oxidation potential for hydronium generation, using large super-acid anions that are themselves also stable against oxidation. In this way, we demonstrate that poly(fluorene-alt-triarylamine) derivatives with tethered perfluoroalkyl-sulfonylimidosulfonyl anions can provide ambient solution-processability directly in the ultrahigh-workfunction hole-doped state to give films with good thermal stability. These results lay the path for design of soft materials for battery, bio-electronic and thermoelectric applications.

Improving organic photovoltaic cells by forcing electrode work function well beyond onset of Ohmic transition

As electrode work function rises or falls sufficiently, the organic semiconductor/electrode contact reaches Fermi-level pinning, and then, few tenths of an electron-volt later, Ohmic transition. For organic solar cells, the resultant flattening of open-circuit voltage (V_oc) and fill factor (FF) leads to a ‘plateau’ that maximizes power conversion efficiency (PCE). Here, we demonstrate this plateau in fact tilts slightly upwards. Thus, further driving of the electrode work function can continue to improve V_oc and FF, albeit slowly. The first effect arises from the coercion of Fermi level up the semiconductor density-of-states in the case of ‘soft’ Fermi pinning, raising cell built-in potential. The second effect arises from the contact-induced enhancement of majority-carrier mobility. We exemplify these using PBDTTPD:PCBM solar cells, where PBDTTPD is a prototypal face-stacked semiconductor, and where work function of the hole collection layer is systematically ‘tuned’ from onset of Fermi-level pinning, through Ohmic transition, and well into the Ohmic regime.

Both open-circuit voltage and fill factor of organic solar cells are affected by the metal-organic semiconductor interface. Here, the authors demonstrate that the voltage can continue to rise when the Fermi level is forced up to the semiconductor density-of-states tail.

n-type charge transport in heavily p-doped polymers

It is commonly assumed that charge-carrier transport in doped π-conjugated polymers is dominated by one type of charge carrier, either holes or electrons, as determined by the chemistry of the dopant. Here, through Seebeck coefficient and Hall effect measurements, we show that mobile electrons contribute substantially to charge-carrier transport in π-conjugated polymers that are heavily p-doped with strong electron acceptors. Specifically, the Seebeck coefficient of several p-doped polymers changes sign from positive to negative as the concentration of the oxidizing agents FeCl₃ or NOBF₄ increase, and Hall effect measurements for the same p-doped polymers reveal that electrons become the dominant delocalized charge carriers. Ultraviolet and inverse photoelectron spectroscopy measurements show that doping with oxidizing agents results in elimination of the transport gap at high doping concentrations. This approach of heavy p-type doping is demonstrated to provide a promising route to high-performance n-type organic thermoelectric materials.

Redox-Active Polymeric Ionic Liquids with Pendant N-Substituted Phenothiazine

Polymers that are elastic while supporting charge transport are desirable for flexible and soft electronics. Many polymers with bulky and conjugated redox-active pendant units have high glass transition temperatures (T_g) in their neutral form that will not lead to elasticity at room temperature. Their behavior in charged form in the solid state without an electrolyte has not been extensively studied. Here, the design strategy of polymeric ionic liquid where two weakly interacting ionic groups are used to maintain a low T_g is shown to lead to flexible redox active polymers. The use of a flexible ethylene backbone and redox-active phenothiazine (PTZ)-based pendant group resulted in polymers with relatively low T_g that are electrically conductive. PTZ that was N-substituted with 2-(2-ethoxyethoxy)ethoxy)ethyl was found to promote solubility of the polymer and lower the T_g of the neutral polymer by ∼150 °C relative to that of the T_g of a variant without the N-substituent. Doping with trifluoromethanesulfonimide leads to an electrically conductive polymer without significantly increasing the T_g. Physical characterization by UV-vis-NIR spectroscopy, electron spin resonance spectroscopy, and impedance spectroscopy verified that the molecular design leads to an efficient charge hopping between the PTZ groups.

Surface Doping of Organic Single-Crystal Semiconductors to Produce Strain-Sensitive Conductive Nanosheets

A highly periodic electrostatic potential, even though established in van der Waals bonded organic crystals, is essential for the realization of a coherent band electron system. While impurity doping is an effective chemical operation that can precisely tune the energy of an electronic system, it always faces an unavoidable difficulty in molecular crystals because the introduction of a relatively high density of dopants inevitably destroys the highly ordered molecular framework. In striking contrast, a versatile strategy is presented to create coherent 2D electronic carriers at the surface of organic semiconductor crystals with their precise molecular structures preserved perfectly. The formation of an assembly of redox-active molecular dopants via a simple one-shot solution process on a molecularly flat crystalline surface allows efficient chemical doping and results in a relatively high carrier density of 1013 cm-2 at room temperature. Structural and magnetotransport analyses comprehensively reveal that excellent carrier transport and piezoresistive effects can be obtained that are similar to those in bulk crystals.

Driving Force and Optical Signatures of Bipolaron Formation in Chemically Doped Conjugated Polymers

Molecular dopants are often added to semiconducting polymers to improve electrical conductivity. However, the use of such dopants does not always produce mobile charge carriers. In this work, ultrafast spectroscopy is used to explore the nature of the carriers created following doping of conjugated push-pull polymers with both F₄ TCNQ (2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane) and FeCl₃ . It is shown that for one particular push-pull material, the charge carriers created by doping are entirely non-conductive bipolarons and not single polarons, and that transient absorption spectroscopy following excitation in the infrared can readily distinguish the two types of charge carriers. Based on density functional theory calculations and experiments on multiple push-pull conjugated polymers, it is argued that the size of the donor push units determines the relative stabilities of polarons and bipolarons, with larger donor units stabilizing the bipolarons by providing more area for two charges to co-reside.

UV-to-IR Absorption of Molecularly p-Doped Polythiophenes with Alkyl and Oligoether Side Chains: Experiment and Interpretation Based on Density Functional Theory

The UV-to-IR transitions in p-doped poly(3-hexylthiophene) (P3HT) with alkyl side chains and polar polythiophene with tetraethylene glycol side chains are studied experimentally by means of the absorption spectroscopy and computationally using density functional theory (DFT) and tight-binding DFT. The evolution of electronic structure is calculated as the doping level is varied, while the roles of dopant ions, chain twisting, and π-π stacking are also considered, each of these having the effect of broadening the absorption peaks while not significantly changing their positions. The calculated spectra are found to be in good agreement with experimental spectra obtained for the polymers doped with a molybdenum dithiolene complex. As in other DFT studies of doped conjugated polymers, the electronic structure and assignment of optical transitions that emerge are qualitatively different from those obtained through earlier "traditional" approaches. In particular, the two prominent bands seen for the p-doped materials are present for both polarons and bipolarons/polaron pairs. The lowest energy of these transitions is due to excitation from the valence band to a spin-resolved orbitals located in the gap between the bands. The higher-energy band is a superposition of excitation from the valence band to a spin-resolved orbitals in the gap and an excitation between bands.

An Organic Borate Salt with Superior p-Doping Capability for Organic Semiconductors

Molecular doping allows enhancement and precise control of electrical properties of organic semiconductors, and is thus of central technological relevance for organic (opto-) electronics. Beyond single-component molecular electron acceptors and donors, organic salts have recently emerged as a promising class of dopants. However, the pertinent fundamental understanding of doping mechanisms and doping capabilities is limited. Here, the unique capabilities of the salt consisting of a borinium cation (Mes2B+; Mes: mesitylene) and the tetrakis(penta-fluorophenyl)borate anion [B(C6F5)4]- is demonstrated as p-type dopant for polymer semiconductors. With a range of experimental methods, the doping mechanism is identified to comprise electron transfer from the polymer to Mes2B+, and the positive charge on the polymer is stabilized by [B(C6F5)4]-. Notably, the former salt cation leaves during processing and is not present in films. The anion [B(C6F5)4]- even enables the stabilization of polarons and bipolarons in poly(3-hexylthiophene), not yet achieved with other molecular dopants. From doping studies with high ionization energy polymer semiconductors, the effective electron affinity of Mes2B+[B(C6F5)4]- is estimated to be an impressive 5.9 eV. This significantly extends the parameter space for doping of polymer semiconductors.

Nearly 100% Photocrosslinking Efficiency in Ultrahigh Work Function Hole-Doped Conjugated Polymers Using Bis(fluorophenyl azide) Additives

Self-compensated (SC) hole-doped conjugated polyelectrolytes with high work functions can provide efficient hole-injection and -collection layers for organic and other semiconductor devices. If these films can be photocrosslinked, the semiconductor overlayer can be deposited from a wider range of solvents, enabling flexibility in device design and fabrication. However, a generic photocrosslinking methodology for these materials is not yet available. Here, we demonstrate that sFPA82-TfO, the recently developed bis(fluorophenyl azide) photocrosslinker that is also i-line compatible, can surprisingly give 100% efficient photocrosslinking for SC hole-doped conjugated polyelectrolytes, i.e., one crosslink per reactive moiety, using mTFF-C₂F₅SIS-Na, a triarylamine-fluorene copolymer, as the model polyelectrolyte, without degrading its ultrahigh work function of 5.75 eV. The photocrosslinking efficiency is much higher than in the corresponding undoped polyelectrolyte and nonconjugated polyelectrolyte films, where the efficiency is only 20%. We attribute this improvement to the formation of smaller ion multiplet clusters in the hole-doped polyelectrolyte, as suggested by molecular dynamics simulations and infrared spectroscopy, which prevents occlusion of the ionic crosslinker. Photocrosslinking of the SC hole-doped mTFF-C₂F₅SIS-Na film used as a hole-injection layer in 100 nm-thick PFOP diodes suppresses the leakage current by over 3 orders of magnitude compared to those without crosslinking, to below 30 nA cm^-2 at ±2 V. Photocrosslinking of the same film used as the hole-collection layer in PBDTTPD:PC₆₁BM solar cells produces a higher photocurrent density, fill factor, and power conversion efficiency.

Tailoring the growth and electronic structures of organic molecular thin films

In the rapidly developing electronics industry, it has become increasingly necessary to explore materials that are cheap, flexible and versatile which have led to significant research efforts towards organic molecular thin films. Organic molecules are unique compared to their inorganic atomic counterparts as their properties can be tuned drastically through chemical functionalization, offering versatility, though their extended shape and weak intermolecular interactions bring significant challenges to the control of both the growth and the electronic structures of molecular thin films. In this paper, we will review the self-assembly process and how to establish long-range ordered organic molecular thin films. We will also discuss how the electronic structures of thin films are impacted by the molecule's local electrostatic environment and its interaction with the substrate, within the context of controlling interfacial energy level alignment between organic semiconductors and electrodes in electronic devices.

Multivalent anions as universal latent electron donors

Electrodes with low work functions are required to efficiently inject electrons into semiconductor devices. However, when the work function drops below about 4 electronvolts, the electrode suffers oxidation in air, which prevents its fabrication in ambient conditions. Here we show that multivalent anions such as oxalate, carbonate and sulfite can act as powerful latent electron donors when dispersed as small ion clusters in a matrix, while retaining their ability to be processed in solution in ambient conditions. The anions in these clusters can even n-dope the semiconductor core of π-conjugated polyelectrolytes that have low electron affinities, through a ground-state doping mechanism that is further amplified by a hole-sensitized or photosensitized mechanism in the device. A theoretical analysis of donor levels of these anions reveals that they are favourably upshifted from ionic lattices by a decrease in the Coulomb stabilization of small ion clusters, and by irreversibility effects. We attain an ultralow effective work function of 2.4 electronvolts with the polyfluorene core. We realize high-performance, solution-processed, white-light-emitting diodes and organic solar cells using polymer electron injection layers with these universal anion donors, demonstrating a general approach to chemically designed and ambient-processed Ohmic electron contacts for semiconductor devices.

Achieving High Doping Concentration by Dopant Vapor Deposition in Organic Solar Cells

Compared with the interfacial doping, molecular doping in bulk heterojunction (BHJ) is a more direct but challenging approach to optimize the photovoltaic performance in organic solar cells (OSCs). One of the main obstacles for its success is the low doping concentration because of the morphological damage. Starting from the phase diagram analysis, we discover that the unpreferred good miscibility between the p-type dopant and the acceptor leads to incorrect dopant dispersion, which reduces the achievable doping content. To overcome this, we use sequential doping by vapor annealing instead of blend solution doping, and we achieve the high doping concentration without sacrificing the blend film morphology. Benefiting from the undamaged film, we fulfill improved photovoltaic performance. Our positive results reveal the feasibility of high-level doping in complex organic BHJ films. It is believed that doping at high concentration potentially enlarges the extent of tunable range on electronic properties in OSCs and indicates greater improvement for device performance.

Ultrafast transient absorption spectroscopy of doped P3HT films: distinguishing free and trapped polarons

It is generally presumed that the vast majority of carriers created by chemical doping of semiconducting polymer films are coulombically trapped by the counteranion, with only a small fraction that are free and responsible for the increased conductivity essential for organic electronic applications. At higher doping levels, it is also possible for bipolarons to form, which are expected to be less conductive than single polarons. Unfortunately, there is no simple way to distinguish free polarons, trapped polarons and bipolarons using steady-state spectroscopy. Thus, in this work, we use ultrafast transient absorption spectroscopy to study the dynamics of polarons in 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TNCQ)-doped films of poly(3-hexylthiophene-2,5-diyl) (P3HT) as a function of dopant concentration and excitation wavelength. When exciting on the red side of the polaron P1 transition, our transient absorption spectra and kinetics match well with what is expected for free 2-D-delocalized polarons; the measurements are not consistent with a recent theory of doped conjugated polymer electronic structure that suggests that the half-filled state lies deeper in the conduction band rather than in the bandgap. As we tune the excitation wavelength to the blue, our measurements reveal an increasing amount of slower transient kinetics that are consistent with the presence of coulombically-trapped polarons rather than bipolarons. Taking advantage of their distinct ultrafast relaxation kinetics as a type of action spectroscopy, we are able to extract the steady-state absorption spectra of free and trapped polarons as a function of dopant concentration. By comparing the results to theoretical models, we determine that in F4TCNQ-doped P3HT films, trapped polarons sit ∼0.4 nm away from the anion while free polarons reside between 0.7 and 0.9 nm from the counteranion. Perhaps counterintuitively, the ratio of trapped to free polarons increases at higher doping levels, an observation that is consistent with a plateau in the concentration-dependent conductivity of F4TCNQ-doped P3HT films.

Ohmic transition at contacts key to maximizing fill factor and performance of organic solar cells

While thermodynamic detailed balance limits the maximum power conversion efficiency of a solar cell, the quality of its contacts can further limit the actual efficiency. The criteria for good contacts to organic semiconductors, however, are not well understood. Here, by tuning the work function of poly(3,4-ethylenedioxythiophene) hole collection layers in fine steps across the Fermi-level pinning threshold of the model photoactive layer, poly(3-hexylthiophene):phenyl-C₆₁-butyrate methyl ester, in organic solar cells, we obtain direct evidence for a non-ohmic to ohmic transition at the hole contact that lies 0.3 eV beyond its Fermi-level pinning transition. This second transition corresponds to reduction of the photocurrent extraction resistance below the bulk resistance of the cell. Current detailed balance analysis reveals that this extraction resistance is the counterpart of injection resistance, and the measured characteristics are manifestations of charge carrier hopping across the interface. Achieving ohmic transition at both contacts is key to maximizing fill factor without compromising open-circuit voltage nor short-circuit current of the solar cell.

The importance of ohmic contacts for organic solar cells has been recognized, but how the transition to ohmic behavior occurs is unknown. Tan et al. show that this transition happens separately beyond Fermi-level pinning, when the interfacial contact resistivity becomes sufficiently low.

Controlling Molecular Doping in Organic Semiconductors

The field of organic electronics thrives on the hope of enabling low-cost, solution-processed electronic devices with mechanical, optoelectronic, and chemical properties not available from inorganic semiconductors. A key to the success of these aspirations is the ability to controllably dope organic semiconductors with high spatial resolution. Here, recent progress in molecular doping of organic semiconductors is summarized, with an emphasis on solution-processed p-type doped polymeric semiconductors. Highlighted topics include how solution-processing techniques can control the distribution, diffusion, and density of dopants within the organic semiconductor, and, in turn, affect the electronic properties of the material. Research in these areas has recently intensified, thanks to advances in chemical synthesis, improved understanding of charged states in organic materials, and a focus on relating fabrication techniques to morphology. Significant disorder in these systems, along with complex interactions between doping and film morphology, is often responsible for charge trapping and low doping efficiency. However, the strong coupling between doping, solubility, and morphology can be harnessed to control crystallinity, create doping gradients, and pattern polymers. These breakthroughs suggest a role for molecular doping not only in device function but also in fabrication-applications beyond those directly analogous to inorganic doping.