Direct chemical conversion of graphene to boron- and nitrogen- and carbon-containing atomic layers

Surface Chemistry of a Halogenated Borazine: From Supramolecular Assemblies to a Random Covalent BN-Substituted Carbon Network

The on-surface synthesis strategy has emerged as a promising route for fabricating well-defined two-dimensional (2D) BN-substituted carbon nanomaterials with tunable electronic properties. This approach relies on specially designed precursors and requires a thorough understanding of the on-surface reaction pathways. It promises precise structural control at the atomic scale, thus complementing chemical vapor deposition (CVD). In this study, we investigated a novel heteroatomic precursor, tetrabromoborazine, which incorporates a BN core and an OH group, on Ag(111) using low temperature scanning tunnelling microscopy/spectroscopy (LT-STM/STS) and X-ray photoelectron spectroscopy (XPS). Through sequential temperature-induced reactions involving dehalogenation and dehydrogenation, distinct tetrabromoborazine derivatives were produced as reaction intermediates, leading to the formation of specific self-assemblies. Notably, the resulting intricate supramolecular structures include a chiral kagomé lattice composed of molecular dimers exhibiting a unique electronic signature. The final product obtained was a random covalent carbon network with BN-substitution and embedded oxygen heteroatoms. Our study offers valuable insights into the significance of the structure and functionalization of BN precursors in temperature-induced on-surface reactions, which can help future rational precursor design. Additionally, it introduces complex surface architectures that offer a high areal density of borazine cores.

Highly Thermally Conductive Super-Aligned Boron Nitride Nanotube Films for Flexible Electronics Thermal Management

Flexible electronics toward high integration, miniaturization, and multifunctionality, leading to a dramatic increase in power density. However, the low thermal conductivity of flexible substrates impedes efficient heat dissipation and device performance improvement. In this work, we propose a template-assisted chemical conversion strategy for obtaining boron nitride nanotube (BNNT) films with high thermal conductivity and great flexibility. Aligned carbon nanotube (CNT) films have been adopted as templates; a low-temperature chemical conversion followed by a high-temperature annealing has been carried out to produce a highly ordered BNNT film. Benefiting from the high orientation order, the BNNT film exhibits an exceptional thermal conductivity of 45.5 W m-1 K-1 and presents excellent heat dissipation capability, much superior to the commonly used polyimide film. Furthermore, the BNNT film demonstrated excellent flexibility and high insulation resistance. The test of integration with film resistors demonstrated its potential as a thermally conductive substrate for electronics cooling. This work provides a solution for the effective thermal management of flexible electronics.

Size Control of Carbon Xerogel Spheres as Key Factor Governing the H2O2 Selectivity in Metal-Free Bifunctional Electro-Fenton Catalysts for Tetracycline Degradation

Carbon xerogel spheres co-doped with nitrogen and eco-graphene were synthesized using a typical solvothermal method. The results indicate that the incorporation of eco-graphene enhances the electrochemical properties, such as the current density (JK) and the selectivity for the four transferred electrons (n). Additionally, nitrogen doping has a significant effect on the degradation efficiency, varying with the size of the carbon xerogel spheres, which could be attributed to the type of nitrogenous group doped in the carbon material. The degradation efficiency improved in the nanometric spheres (48.3% to 61.6%) but decreased in the micrometric-scale spheres (58.6% to 53.4%). This effect was attributed to the N-functional groups present in each sample, with N-CNS-5 exhibiting a higher percentage of graphitic nitrogen (35.7%) compared to N-CMS-5 (15.3%). These findings highlight the critical role of sphere size in determining the type of N-functional groups present in the sample. leading to enhanced degradation of pollutants as a result of the electro-Fenton process.

Optical and electronic properties of BCN films deposited by magnetron sputtering

Boron carbonitride (BCN) films containing hybridized bonds involving B, C, and N over wide compositional ranges enable an abundant variety of new materials, properties, and applications; however, their electronic performance is still limited by the presence of structural and electronic defects, yielding sluggish mobility and electrical conductivity. This work reports on mechanically stable BCN films and their corresponding optical and electronic properties. The ternary BCN films consisting of hybridized B-C-N bonds have been achieved by varying N2 flow by the radio frequency magnetron sputtering method. The BCN films show a bandgap value ranging from 3.32 to 3.82 eV. Hall effect measurements reveal an n-type conductivity with an improved hall mobility of 226 cm2/V s at room temperature for the optimal film. The n-BCN/p-Si heterojunctions exhibit a nonlinear rectifying characteristic, where the tunneling behavior dominates the injection regimes due to the density of defects, i.e., structural disorder and impurities. Our work demonstrates the tunable electrical properties of BCN/Si p-n diodes and, thus, is beneficial for the potential application in the fields of optics, optoelectronics, and electrics.

The Integration of Two-Dimensional Materials and Ferroelectrics for Device Applications

In recent years, there has been growing interest in functional devices based on two-dimensional (2D) materials, which possess exotic physical properties. With an ultrathin thickness, the optoelectrical and electrical properties of 2D materials can be effectively tuned by an external field, which has stimulated considerable scientific activities. Ferroelectric fields with a nonvolatile and electrically switchable feature have exhibited enormous potential in controlling the electronic and optoelectronic properties of 2D materials, leading to an extremely fertile area of research. Here, we review the 2D materials and relevant devices integrated with ferroelectricity. This review starts to introduce the background about the concerned themes, namely 2D materials and ferroelectrics, and then presents the fundamental mechanisms, tuning strategies, as well as recent progress of the ferroelectric effect on the optical and electrical properties of 2D materials. Subsequently, the latest developments of 2D material-based electronic and optoelectronic devices integrated with ferroelectricity are summarized. Finally, the future outlook and challenges of this exciting field are suggested.

How to Tailor Porous Boron Nitride Properties for Applications in Interfacial Processes

The research of new porous materials for applications in interfacial processes is key to addressing global energy and sustainability challenges. For example, porous materials can be used to store fuels such as hydrogen or methane or to separate chemical mixtures reducing the energy currently required by thermal separation processes. Their catalytic properties can be exploited to convert adsorbed molecules into valuable or less hazardous chemicals, thereby reducing energy consumption or pollutants emissions. Porous boron nitride (BN) has appeared as a promising material for applications in molecular separations, gas storage, and catalysis owing to its high surface area and thermal stability, as well as its tunable physical properties and chemistry. However, the production of porous BN is still limited to the laboratory scale, and its formation mechanism, as well as ways to control porosity and chemistry, are yet to be fully understood. In addition, studies have pointed toward the instability of porous BN materials when exposed to humidity, which could significantly impact performance in industrial applications. Studies on porous BN performance and recyclability when employed in adsorption, gas storage, and catalysis remain limited, despite encouraging preliminary studies. Moreover, porous BN powder must be shaped into macrostructures (e.g., pellets) to be used commercially. However, common methods to shape porous materials into macrostructures often cause a reduction in the surface area and/or mechanical strength. In recent years, research groups, including ours, have started addressing the challenges discussed above. Herein, we summarize our collective findings through a selection of key studies. First, we discuss the chemistry and structure of BN, clarifying confusion around terminology and discussing the hydrolytic instability of the material in relation to its structure and chemistry. We demonstrate a way to reduce the instability in water while still maintaining high specific surface area. We propose a mechanism for the formation of porous BN and discuss the effects of different synthesis parameters on the structure and chemistry of porous BN, therefore providing a way to tune its properties for selected applications. While the syntheses covered often lead to a powder product, we also present ways to shape porous BN powders into macrostructures while still maintaining high accessible surface area for interfacial processes. Finally, we evaluate porous BN performance for chemical separations, gas storage, and catalysis. While the above highlights key advances in the field, further work is needed to allow deployment of porous BN. Specifically, we suggest evaluating its hydrolytic stability, refining the ways to shape the material into stable and reproducible macrostructures, establishing clear design rules to produce BN with specific chemistry and porosity, and, finally, providing standardized test procedures to evaluate porous BN catalytic and sorptive properties to facilitate comparison.

Microporous Borocarbonitrides BxCyNz: Synthesis, Characterization, and Promises for CO2 Capture

Porous borocarbonitrides (denoted BCN) were prepared through pyrolysis of the polymer stemmed from dehydrocoupled ethane 1,2-diamineborane (BH₃NH₂CH₂CH₂NH₂BH₃, EDAB) in the presence of F-127. These materials contain interconnected pores in the nanometer range with a high specific surface area up to 511 m² · g^-1. Gas adsorption of CO₂ demonstrated an interesting uptake (3.23 mmol · g^-1 at 0 °C), a high CO₂/N₂ selectivity as well as a significant recyclability after several adsorption-desorption cycles. For comparison's sake, a synthesized non-porous BCN as well as a commercial BN sample were studied to investigate the role of porosity and carbon doping factors in CO₂ capture. The present work thus tends to demonstrate that the two-step synthesis of microporous BCN adsorbent materials from EDAB using a bottom-up approach (dehydrocoupling followed by pyrolysis at 1100 °C) is relatively simple and interesting.

Synthesis and Properties of B4 N4 -Heteropentalenes Fused with Polycyclic Hydrocarbons

Hybrid molecules of π-conjugated carbon rings and BN-heterocyclic rings (h-CBNs) fused with each other have been a rare class of compounds due to the limited availability of their synthetic methods. Here we report the synthesis of new h-CBNs featuring a B₄ N₄ -heteropentalene core and polycyclic aromatic hydrocarbon wings. Using 1,2-azaborinine derivatives as a building block, we developed a rational synthetic protocol that allows the formation of a B₄ N₄ ring in a stepwise manner, resulting in the fully fused ABA-type triblock molecules. Thus, three derivatives of 1 bearing naphthalene (1_Naph ), anthracene (1_Anth ), or phenanthrene (1_Phen ) wings fused with the B₄ N₄ core were synthesized and characterized. Among them, 1_Phen , which displays the highest triplet-state energy, was found to serve a host material for phosphorescent OLED devices, for which a maximum external quantum efficiency of 13.7 % was recorded. These findings may promote the synthesis of various types of h-CBNs aiming at new properties arising from the synergy of two different π-electronic systems.

A Review of Scalable Hexagonal Boron Nitride (h-BN) Synthesis for Present and Future Applications

Hexagonal boron nitride (h-BN) is a layered inorganic synthetic crystal exhibiting high temperature stability and high thermal conductivity. As a ceramic material it has been widely used for thermal management, heat shielding, lubrication, and as a filler material for structural composites. Recent scientific advances in isolating atomically thin monolayers from layered van der Waals crystals to study their unique properties has propelled research interest in mono/few layered h-BN as a wide bandgap insulating support for nanoscale electronics, tunnel barriers, communications, neutron detectors, optics, sensing, novel separations, quantum emission from defects, among others. Realizing these futuristic applications hinges on scalable cost-effective high-quality h-BN synthesis. Here, the authors review scalable approaches of high-quality mono/multilayer h-BN synthesis, discuss the challenges and opportunities for each method, and contextualize their relevance to emerging applications. Maintaining a stoichiometric balance B:N = 1 as the atoms incorporate into the growing layered crystal and maintaining stacking order between layers during multi-layer synthesis emerge as some of the main challenges for h-BN synthesis and the development of processes to address these aspects can inform and guide the synthesis of other layered materials with more than one constituent element. Finally, the authors contextualize h-BN synthesis efforts along with quality requirements for emerging applications via a technological roadmap.

Discretized hexagonal boron nitride quantum emitters and their chemical interconversion

Quantum emitters in two-dimensional hexagonal boron nitride (hBN) are of significant interest because of their unique photophysical properties, such as single-photon emission at room temperature, and promising applications in quantum computing and communications. The photoemission from hBN defects covers a wide range of emission energies but identifying and modulating the properties of specific emitters remain challenging due to uncontrolled formation of hBN defects. In this study, more than 2000 spectra are collected consisting of single, isolated zero-phonon lines (ZPLs) between 1.59 and 2.25 eV from diverse sample types. Most of ZPLs are organized into seven discretized emission energies. All emitters exhibit a range of lifetimes from 1 to 6 ns, and phonon sidebands offset by the dominant lattice phonon in hBN near 1370 cm^-1. Two chemical processing schemes are developed based on water and boric acid etching that generate or preferentially interconvert specific emitters, respectively. The identification and chemical interconversion of these discretized emitters should significantly advance the understanding of solid-state chemistry and photophysics of hBN quantum emission.

In-situ synthesis of non-phase-separated boron carbon nitride for photocatalytic reduction of CO2

Non-phase-separated hexagonal boron carbon nitride (h-BCN) is an emerging type of promising metal-free photocatalyst, but the synthesis of this material remains quite challenging. Here, h-BCN without phase separation was obtained through a novel organic-inorganic hybrid precursor pyrolysis method using boric acid and ethylenediamine as raw materials. The resultant BCN-1 exhibited excellent photocatalytic activity for CO₂ reduction, as confirmed by a CO generation rate of 13.97 μmol g^-1 h^-1 under visible light illumination with no co-catalyst or sacrificial agent. This rate was 9.4 times higher than that of g-C₃N₄ (2.1 μmol g^-1 h^-1) under the same experimental condition. The pre-existing C-N-B bond is essential for mediating the growth kinetics and diminishing the thermodynamically preferred C and BN phase-segregation structure, while ammonia is crucial for C-N-B bond fixation and pore formation during the pyrolysis process. This finding of a facile method for synthesizing non-phase-separated BCN has positive effects on the study of photocatalytic CO₂ reduction by sustainable metal-free catalysts.

Dual-Atom Metal and Nonmetal Site Catalyst on a Single Nickel Atom Supported on a Hybridized BCN Nanosheet for Electrochemical CO2 Reduction to Methane: Combining High Activity and Selectivity

Atomically dispersed nitrogen-coordinated transition-metal sites supported on graphene (TM-N₄-C) offer promising potential for the electrochemical carbon dioxide reduction reaction (CO₂RR). However, a few TM-N_x-C single-atom catalysts (SAC) are capable of reducing CO₂ to multielectron products with high activity and selectivity. Herein, using density functional theory calculations, we investigated the electrocatalytic performance of a single TM atom embedded into a defective BCN nanosheet for CO₂RR. The N and B atom co-coordinated TM center, namely, TM-B₂N₂, constructs a symmetry-breaking site, which strengthens the overlapping of atomic orbitals, and enables the linear CO₂ to be curved and activated, compared to the weak coupling of CO₂ with the symmetric TM-N₄ site. Moreover, the TM-B₂N₂ sites play a role of dual-atom active sites, in which the TM atom serves as the carbon adsorption site and the B atom acts as the oxygen adsorption site, largely stabilizing the key intermediates, especially *COOH. The symmetry-breaking coordination structures shift the d-band center of the TM atom toward the Fermi level and thus facilitate CO₂ reduction to hydrocarbons and oxygenates. As a result, different from the TM-N₄-C structure that leads to CO as the major product, the Ni atom supported on BCN can selectively catalyze CO₂ conversion into CH₄, with an ultralow limiting potential of -0.07 V, while suppressing the hydrogen evolution reaction. Our finding suggests that introduction of a nonmetal active site adjacent to the metal site provides a new avenue for achieving efficient multi-intermediate electrocatalytic reactions.

Confinement on the optical response in h-BNCs: Towards highly efficient SERS-active 2D substrates

Several experimental and theoretical studies have shown that 2D hybrid structures formed by boron, nitrogen and carbon atoms (h-BNCs) possess a highly tunable linear and non-linear optical responses. Recent advances towards the controlled synthesis of these unique structures have motivated an important number of experimental and theoretical work. In this work, the confinement on the optical response induced by boron-nitride (BN) strings in h-BNC 2D structures is investigated using time-dependent density functional theory (TDDFT) and electron density response properties. The number of surrounding BN strings (N_BN) necessary to "isolate" the optical modes of a carbon nanoisland (nanographene) from the remaining substrate has been characterized in two different nanoisland models: benzene and pyrene. It was found that for N_BN ≥ 3 the excitation wavelengths of the optically active modes remain constant and the changes in the transition densities, the ground to excited state density differences and their associated electron deformation orbitals are negligible and strongly confined within the carbon nanoisland. Using a water molecule as model system, Raman enhancement factors of 10 [6] for the water vibrational modes are obtained when these electromagnetic "hot spots" are activated by an external electromagnetic field. The high tunability of the optical absorption bands of nanographenes through changes in size and morphology makes h-BNCs be perfect materials to construct platforms for surface enhancement Raman spectroscopy (SERS) for a wide range of laser sources.

Direct growth of hexagonal boron nitride on non-metallic substrates and its heterostructures with graphene

Hexagonal boron nitride (h-BN) and its heterostructures with graphene are widely investigated van der Waals (vdW) quantum materials for electronics, photonics, sensing, and energy storage/transduction. However, their metal catalyst-based growth and transfer-based heterostructure assembly approaches present impediments to obtaining high-quality and wafer-scale quantum material. Here, we have presented our perspective on the synthetic strategies that involve direct nucleation of h-BN on various dielectric substrates and its heterostructures with graphene. Mechanistic understanding of direct growth of h-BN via bottom-up approaches such as (a) the chemical-interaction guided nucleation on silicon-based dielectrics, (b) surface nitridation and N+ sputtering of h-BN target on sapphire, and (c) epitaxial growth of h-BN on sapphire, among others, are reviewed. Several design methodologies are presented for the direct growth of vertical and lateral vdW heterostructures of h-BN and graphene. These complex 2D heterostructures exhibit various physical phenomena and could potentially have a range of practical applications.

Status and prospects of Ohmic contacts on two-dimensional semiconductors

In recent years, two-dimensional materials have received more and more attention in the development of semiconductor devices, and their practical applications in optoelectronic devices have also developed rapidly. However, there are still some factors that limit the performance of two-dimensional semiconductor material devices, and one of the most important is Ohmic contact. Here, we elaborate on a variety of approaches to achieve Ohmic contacts on two-dimensional materials and reveal their physical mechanisms. For the work function mismatch problem, we summarize the comparison of barrier heights between different metals and 2D semiconductors. We also examine different methods to solve the problem of Fermi level pinning. For the novel 2D metal-semiconductor contact methods, we analyse their effects on reducing contact resistance from two different perspectives: homojunction and heterojunction. Finally, the challenges of 2D semiconductors in achieving Ohmic contacts are outlined.

Structure, Properties and Applications of Two-Dimensional Hexagonal Boron Nitride

Hexagonal boron nitride (h-BN) has emerged as a strong candidate for two-dimensional (2D) material owing to its exciting optoelectrical properties combined with mechanical robustness, thermal stability, and chemical inertness. Super-thin h-BN layers have gained significant attention from the scientific community for many applications, including nanoelectronics, photonics, biomedical, anti-corrosion, and catalysis, among others. This review provides a systematic elaboration of the structural, electrical, mechanical, optical, and thermal properties of h-BN followed by a comprehensive account of state-of-the-art synthesis strategies for 2D h-BN, including chemical exfoliation, chemical, and physical vapor deposition, and other methods that have been successfully developed in recent years. It further elaborates a wide variety of processing routes developed for doping, substitution, functionalization, and combination with other materials to form heterostructures. Based on the extraordinary properties and thermal-mechanical-chemical stability of 2D h-BN, various potential applications of these structures are described.

Atomically Thin Materials for Next-Generation Rechargeable Batteries

Atomically thin materials (ATMs) with thicknesses in the atomic scale (typically <5 nm) offer inherent advantages of large specific surface areas, proper crystal lattice distortion, abundant surface dangling bonds, and strong in-plane chemical bonds, making them ideal 2D platforms to construct high-performance electrode materials for rechargeable metal-ion batteries, metal-sulfur batteries, and metal-air batteries. This work reviews the synthesis and electronic property tuning of state-of-the-art ATMs, including graphene and graphene derivatives (GE/GO/rGO), graphitic carbon nitride (g-C₃N₄), phosphorene, covalent organic frameworks (COFs), layered transition metal dichalcogenides (TMDs), transition metal carbides, carbonitrides, and nitrides (MXenes), transition metal oxides (TMOs), and metal-organic frameworks (MOFs) for constructing next-generation high-energy-density and high-power-density rechargeable batteries to meet the needs of the rapid developments in portable electronics, electric vehicles, and smart electricity grids. We also present our viewpoints on future challenges and opportunities of constructing efficient ATMs for next-generation rechargeable batteries.

When graphene meets white graphene - recent advances in the construction of graphene and h-BN heterostructures

2D heterostructures have very recently witnessed a boom in scientific and technological activities owing to the customized spatial orientation and tailored physical properties. A large amount of 2D heterostructures have been constructed on the basis of the combination of mechanical exfoliation and located transfer method, opening wide possibilities for designing novel hybrid systems with tuned structures, properties, and applications. Among the as-developed 2D heterostructures, in-plane graphene and h-BN heterostructures have drawn the most attention in the past few decades. The controllable synthesis, the investigation of properties, and the expansion of applications have been widely explored. Herein, the fabrication of graphene and h-BN heterostructures is mainly focused on. Then, the spatial configurations for the heterostructures are systematically probed to identify the highly related unique features. Moreover, as a most promising approach for the scaled production of 2D materials, the in situ CVD fabrication of the heterostructures is summarized, demonstrating a significant potential in the controllability of size, morphology, and quality. Further, the recent applications of the 2D heterostructures are discussed. Finally, the concerns and challenges are fully elucidated and a bright future has been envisioned.

Graphene-Based Hybrid Functional Materials

Graphene is a 2D material combining numerous outstanding physical properties, including high flexibility and strength, extremely high thermal conductivity and electron mobility, transparency, etc., which make it a unique testbed to explore fundamental physical phenomena. Such physical properties can be further tuned by combining graphene with other nanomaterials or (macro)molecules to form hybrid functional materials, which by design can display not only the properties of the individual components but also exhibit new properties and enhanced characteristics arising from the synergic interaction of the components. The implementation of the hybrid approach to graphene also allows boosting the performances in a multitude of technological applications. This review reports the hybrids formed by graphene combined with other low-dimensional nanomaterials of diverse dimensionality (0D, 1D, and 2D) and (macro)molecules, with emphasis on the synthetic methods. The most important applications of these hybrids in the fields of sensing, water purification, energy storage, biomedical, (photo)catalysis, and opto(electronics) are also reviewed, with a special focus on the superior performances of these hybrids compared to the individual, nonhybridized components.

Strain-tuned magnetism and half-metal to metal transition in defective BCN monolayer

Recently, two-dimensional (2D) BCN, an in-plane heterostructure formed by graphene and hexagonal boron nitride, has been successfully synthesized experimentally and exhibits diverse electronic properties. Unfortunately, it has been slow on the application of 2D BCN for spintronics due to the lack of the magnetic ordering. Here, using density functional theory calculations, we explored the effect of vacancy defect and biaxial strain on the electronic and magnetic properties of BCN monolayer. It is demonstrated that BCN monolayer can be converted from nonmagnetic semiconductor to magnetic half-metal/metal by introducing C or B vacancies. The half-metal/metal behavior can be remained under the different vacancy concentrations in defective BCN monolayer. In addition, BCN monolayer with C and B vacancies can be converted between half-metal and metal by applying biaxial strain. Moreover, the magnetic properties of defective BCN monolayer can also be efficiently modulated under the biaxial strain by regulating the spin polarization of the C/N/B 2porbitals. Our findings not only provide an effective way to achieve half-metal/metal transition, but also can induce and manipulate the magnetism of BCN monolayer, which may be utilized for the development of 2D BCN spintronic nanodevices.

Towards chirality control of graphene nanoribbons embedded in hexagonal boron nitride

The integrated in-plane growth of graphene nanoribbons (GNRs) and hexagonal boron nitride (h-BN) could provide a promising route to achieve integrated circuitry of atomic thickness. However, fabrication of edge-specific GNRs in the lattice of h-BN still remains a significant challenge. Here we developed a two-step growth method and successfully achieved sub-5-nm-wide zigzag and armchair GNRs embedded in h-BN. Further transport measurements reveal that the sub-7-nm-wide zigzag GNRs exhibit openings of the bandgap inversely proportional to their width, while narrow armchair GNRs exhibit some fluctuation in the bandgap-width relationship. An obvious conductance peak is observed in the transfer curves of 8- to 10-nm-wide zigzag GNRs, while it is absent in most armchair GNRs. Zigzag GNRs exhibit a small magnetic conductance, while armchair GNRs have much higher magnetic conductance values. This integrated lateral growth of edge-specific GNRs in h-BN provides a promising route to achieve intricate nanoscale circuits.

Molten salt synthesis of carbon-doped boron nitride nanosheets with enhanced adsorption performance

Owing to their large specific areas, high thermal stability and chemical inertness, two-dimensional boron carbon nitride nanosheets (BCNNs) have captured much attention in recent years in the field of adsorption of pollutants. The formation of BCNNs via incorporating carbon into boron nitride (BN) can effectively improve the photoelectric and adsorption properties of the latter. In this work, carbon-doped BN (BCN) nanosheets were prepared at 1100 °C via a molten salt route using boric acid, melamine and glucose as the main starting materials. The effects of molten salt type and carbon doping level on the formation of BCN were investigated, and their isothermal adsorption properties in a methylene blue (MB) aqueous solution were evaluated based on the Langmuir and Freundlich models. The results indicated that using molten LiCl-KCl as a liquid medium was more favorable than NaCl-KCl to the formation of BCNNs. As-prepared BC_0.4N sample possessed a sheet-like structure of about 10 nm thick and a specific surface area as high as 484 m² g^-1. Moreover, the adsorption test of MB demonstrated a high adsorption capacity of 249.04 mg g^-1, which was about 14 times higher than that in the case of the pristine BN, and the kinetic rate constant value in the case of using BC_0.4N is about ten times as high as that of BN following a pseudo-second-order model, suggesting that the as-formed BC_0.4N nanosheets could be potentially used as a value-added effective adsorbent for future wastewater remediation.

2D Materials and Heterostructures at Extreme Pressure

2D materials possess wide-tuning properties ranging from semiconducting and metallization to superconducting, etc., which are determined by their structure, empowering them to be appealing in optoelectronic and photovoltaic applications. Pressure is an effective and clean tool that allows modifications of the electronic structure, crystal structure, morphologies, and compositions of 2D materials through van der Waals (vdW) interaction engineering. This enables an insightful understanding of the variable vdW interaction induced structural changes, structure-property relations as well as contributes to the versatile implications of 2D materials. Here, the recent progress of high-pressure research toward 2D materials and heterostructures, involving graphene, boron nitride, transition metal dichalcogenides, 2D perovskites, black phosphorene, MXene, and covalent-organic frameworks, using diamond anvil cell is summarized. A detailed analysis of pressurized structure, phonon dynamics, superconducting, metallization, doping together with optical property is performed. Further, the pressure-induced optimized properties and potential applications as well as the vision of engineering the vdW interactions in heterostructures are highlighted. Finally, conclusions and outlook are presented on the way forward.

Electronic and effective mass modulation in 2D BCN by strain engineering

2D BCN material consisting of graphene and hexagonal boron nitride (h-BN) has received extensive attention due to its abundant electronic properties and promising applications. The actual applications of 2D BCN require that there be precise control over its electronic properties. Using density functional theory calculations, we systematically investigate the electronic structure and effective mass of 2D BCN under biaxial strain. It is demonstrated that the band gap of zigzag BCNs decreases monotonously as the tensile strain increases. Moreover, the system exhibits a similar trend, regardless of the C/h-BN ratio. In sharp contrast, the band gap of armchair BCNs depends on the C/h-BN ratio. Specifically, the band gap of C₂(BN)₄ decreases significantly, while the band gap of C₃(BN)₃ and C₄(BN)₂ initially remains almost unchanged and then increases with increasing biaxial strain in armchair BCNs. In addition, it is found that the effective masses of the electron and hole of BCNs can be effectively modulated by the biaxial strain. Our results suggest a new route to control the electronic properties of 2D BCN and may also facilitate the realization of electronic devices based on 2D BCN material.

Deep Ultraviolet Photodetectors Based on Carbon-Doped Two-Dimensional Hexagonal Boron Nitride

Recently, the deep ultraviolet (DUV) photodetectors fabricated from two-dimensional (2D) hexagonal boron nitride (h-BN) layers have emerged as a hot research topic. However, the existing studies show that the h-BN-based photodetectors have relatively poor performance. In this work, C doping is utilized to modulate the properties of h-BN and improve the performance of the h-BN-based photodetectors. We synthesized the h-BN atomic layers with various C concentrations varying from 0 to 10.2 atom % by ion beam sputtering deposition through controlling the sputtering atmosphere. The h-BN phase remains stable when a small amount of C is incorporated into h-BN, whereas the introduction of a large amount of C impurities leads to the rapidly deteriorated crystallinity of h-BN. Furthermore, the DUV photodetectors based on C-doped h-BN layers were fabricated, and the h-BN-based photodetector with 7.5 atom % C exhibits the best performance with a responsivity of 9.2 mA·W^-1, which is significantly higher than that of the intrinsic h-BN device. This work demonstrates that the C doping is a feasible and effective method for improving the performance of h-BN photodetectors.

Unique hole-accepting carbon-dots promoting selective carbon dioxide reduction nearly 100% to methanol by pure water

Solar-driven CO2 reduction by abundant water to alcohols can supply sustainable liquid fuels and alleviate global warming. However, the sluggish water oxidation reaction has been hardly reported to be efficient and selective in CO2 conversion due to fast charge recombination. Here, using transient absorption spectroscopy, we demonstrate that microwave-synthesised carbon-dots (mCD) possess unique hole-accepting nature, prolonging the electron lifetime (t50%) of carbon nitride (CN) by six folds, favouring a six-electron product. mCD-decorated CN stably produces stoichiometric oxygen and methanol from water and CO2 with nearly 100% selectivity to methanol and internal quantum efficiency of 2.1% in the visible region, further confirmed by isotopic labelling. Such mCD rapidly extracts holes from CN and prevents the surface adsorption of methanol, favourably oxidising water over methanol and enhancing the selective CO2 reduction to alcohols. This work provides a unique strategy for efficient and highly selective CO2 reduction by water to high-value chemicals.

One-dimensional hexagonal boron nitride conducting channel

Hexagonal boron nitride (hBN) is an insulating two-dimensional (2D) material with a large bandgap. Although known for its interfacing with other 2D materials and structural similarities to graphene, the potential use of hBN in 2D electronics is limited by its insulating nature. Here, we report atomically sharp twin boundaries at AA'/AB stacking boundaries in chemical vapor deposition-synthesized few-layer hBN. We find that the twin boundary is composed of a 6'6' configuration, showing conducting feature with a zero bandgap. Furthermore, the formation mechanism of the atomically sharp twin boundaries is suggested by an analogy with stacking combinations of AA'/AB based on the observations of extended Klein edges at the layer boundaries of AB-stacked hBN. The atomically sharp AA'/AB stacking boundary is promising as an ultimate 1D electron channel embedded in insulating pristine hBN. This study will provide insights into the fabrication of single-hBN electronic devices.

Nanoscale boron carbonitride semiconductors for photoredox catalysis

The conversion of solar energy to chemical energy achieved by photocatalysts comprising homogeneous transition-metal based systems, organic dyes, or semiconductors has received significant attention in recent years. Among these photocatalysts, boron carbon nitride (BCN) materials, as an emerging class of metal-free heterogeneous semiconductors, have extended the scope of photocatalysts due to their good performance and Earth abundance. The combination of boron (B), carbon (C), and nitrogen (N) constitutes a ternary system with large surface area and abundant activity sites, which together contribute to the good performance for reduction reactions, oxidation reactions and orchestrated both reduction and oxidation reactions. This Minireview reports the methods for the synthesis of nanoscale hexagonal boron carbonitride (h-BCN) and describes the latest advances in the application of h-BCN materials as semiconductor photocatalysts for sustainable photosynthesis, such as water splitting, reduction of CO₂, acceptorless dehydrogenation, oxidation of sp³ C-H bonds, and sp² C-H functionalization. h-BCN materials may have potential for applications in other organic transformations and industrial manufacture in the future.

A Mechanochemical-Assisted Synthesis of Boron, Nitrogen Co-Doped Porous Carbons as Metal-Free Catalysts

A green and convenient solid-state method assisted by mechanical energy is employed for the synthesis of boron (B) and nitrogen (N) co-doped porous carbons (B,N-Cs). Glutamic acid (Glu) and boric acid (H₃ BO₃ ) are used as the N-containing carbon precursor and boron source, respectively. This method is easy to perform and proved to be efficient towards co-doping B and N into the carbon matrix with high contents of B (7 atom %) and N (10 atom %). By adjusting the molar ratio of H₃ BO₃ to Glu, the surface chemical states of B and N could be readily modulated. When increasing H₃ BO₃ dosage, the pore size of B,N-Cs could be tuned ranging from micropores to mesopores with a Brunauer-Emmett-Teller (BET) surface area up to 940 m²  g^-1 . Finally, the B,N-Cs were applied as metal-free catalysts for the cycloaddition of CO₂ to epoxides, which outperform the N-doped carbon catalyst (NC-900) and the physically mixed catalyst of NC-900/B₄ C. The enhanced activity is attributed to the cooperative effect between B and N sites. X-ray photoelectron spectroscopy (XPS) analysis reveals that BN₃ in the B,N-Cs serves as a critical active site for the cooperative catalysis.

Highly Monochromatic Electron Emission from Graphene/Hexagonal Boron Nitride/Si Heterostructure

In this work, a planar electron emission device based on a graphene/hexagonal boron nitride (h-BN)/n-Si heterostructure is fabricated to realize highly monochromatic electron emission from a flat surface. The h-BN layer is used as an insulating layer to suppress electron inelastic scattering within the planar electron emission device. The energy spread of the emission device using the h-BN insulating layer is 0.28 eV based on the full-width at half-maximum (FWHM), which is comparable to a conventional tungsten field emitter. The characteristic spectral shape of the electron energy distributions reflected the electron distribution in the conduction band of the n-Si substrate. The results indicate that the inelastic scattering of electrons at the insulating layer is drastically suppressed by the h-BN layer. Furthermore, the maximum emission current density reached 2.4 A/cm², which is comparable to that of a conventional thermal cathode. Thus, the graphene/h-BN heterostructure is a promising material for planar electron emission devices to obtain a highly monochromatic electron beam and a high electron emission current density.

Enriched Pyridinic Nitrogen Atoms at Nanoholes of Carbon Nanohorns for Efficient Oxygen Reduction

Nitrogen (N)-doped nanostructured carbons have been actively examined as promising alternatives for precious-metal catalysts in various electrochemical energy generation systems. Herein, an effective approach for synthesizing N-doped single-walled carbon nanohorns (SWNHs) with highly electrocatalytic active sites via controlled oxidation followed by N₂ plasma is presented. Nanosized holes were created on the conical tips and sidewalls of SWNHs under mild oxidation, and subsequently, the edges of the holes were easily decorated with N atoms. The N atoms were present preferentially in a pyridinic configuration along the edges of the nanosized holes without significant structural change of the SWNHs. The enriched edges decorated with the pyridinic-N atoms at the atomic scale increased the number of active sites for the oxygen reduction reaction, and the inherent spherical three-dimensional feature of the SWNHs provided good electrical conductivity and excellent mass transport. We demonstrated an effective method for promoting the electrocatalytic active sites within N-doped SWNHs by combining defect engineering with the preferential formation of N atoms having a specific configuration.

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy

Monolayer (ML) transition-metal dichalcogenides (TMDs) continue to attract research attention, and the heterojunctions formed by vertically stacking or laterally stitching two different TMDs, e.g., MoSe₂ and WSe₂, may have many interesting electronic and optical properties and thus are at the center stage of current research. Experimentally realizing such heterojunctions with desired interface morphologies and electronic properties is of great demand. In this work, we report a diverse interface structure in molecular-beam epitaxial WSe₂-MoSe₂ heterojunction. The corresponding electronic bands show type-II band alignment for both monolayer ML-ML and ML-bilayer lateral junctions irrespective of the presence or absence of step states. Interestingly, a strong anisotropy in lateral heterojunction formation is observed, where sharp interfaces are obtained only when WSe₂ deposition precedes MoSe₂. Reversing the deposition order leads to alloying of the two materials without a notable boundary. This is explained by a step segregation process as suggested by the first-principles total energy calculations.

Two-dimensional hexagonal boron-carbon-nitrogen atomic layers

Two-dimensional (2D) hexagonal boron-carbon-nitrogen (h-BCN) atomic layers are expected to possess interesting properties complementary to those of graphene and h-BN, enabling a rich variety of electronic structures, properties and applications. Herein, we demonstrate a novel method to synthesize 2D h-BCN atomic layers with a full range of compositions by ion beam sputtering deposition under a mixed Ar/CH4 atmosphere. The h-BCN layers have been thoroughly characterized by various techniques, aiming at the determination of their structure evolution and properties. We find that homogeneous h-BCN layers consisting of graphene and h-BN nanodomains can be obtained at an appropriate C content, whereas too high or too low C contents result in the segregation of large-sized graphene or h-BN islands. Furthermore, the band gap of h-BCN layers slightly decreases with the increasing C content, while their electric properties can be tuned from insulating to highly conducting. This work provides a novel approach for synthesizing 2D h-BCN atomic layers and paves the way for the development of h-BCN-based devices.

Potential Application of h-BNC Structures in SERS and SEHRS Spectroscopies: A Theoretical Perspective

In this work, the electronic and optical properties of hybrid boron-nitrogen-carbon structures (h-BNCs) with embedded graphene nanodisks are investigated. Their molecular affinity is explored using pyridine as model system and comparing the results with the corresponding isolated graphene nanodisks. Time-dependent density functional theory (TDDFT) analysis of the electronic excited states was performed in the complexes in order to characterize possible surface and charge transfer resonances in the UV region. Static and dynamic (hyper)polarizabilities were calculated with coupled-perturbed Kohn-Sham theory (CPKS) and the linear and nonlinear optical responses of the complexes were analyzed in detail using laser excitation wavelengths available for (Hyper)Raman experiments and near-to-resonance excitation wavelengths. Enhancement factors around 10³ and 10⁸ were found for the polarizability and first order hyperpolarizability, respectively. The quantum chemical simulations performed in this work point out that nanographenes embedded within hybrid h-BNC structures may serve as good platforms for enhancing the (Hyper)Raman activity of organic molecules immobilized on their surfaces and for being employed as substrates in surface enhanced (Hyper)Raman scattering (SERS and SEHRS). Besides the better selectivity and improved signal-to-noise ratio of pristine graphene with respect to metallic surfaces, the confinement of the optical response in these hybrid h-BNC systems leads to strong localized surface resonances in the UV region. Matching these resonances with laser excitation wavelengths would solve the problem of the small enhancement factors reported in Raman experiments using pristine graphene. This may be achieved by tuning the size/shape of the embedded nanographene structure.

Doping Nanoscale Graphene Domains Improves Magnetism in Hexagonal Boron Nitride

Carbon doping can induce unique and interesting physical properties in hexagonal boron nitride (h-BN). Typically, isolated carbon atoms are doped into h-BN. Herein, however, the insertion of nanometer-scale graphene quantum dots (GQDs) is demonstrated as whole units into h-BN sheets to form h-CBN. The h-CBN is prepared by using GQDs as seed nucleations for the epitaxial growth of h-BN along the edges of GQDs without the assistance of metal catalysts. The resulting h-CBN sheets possess a uniform distrubution of GQDs in plane and a high porosity macroscopically. The h-CBN tends to form in small triangular sheets which suggests an enhanced crystallinity compared to the h-BN synthesized under the same conditions without GQDs. An enhanced ferromagnetism in the h-CBN emerges due to the spin polarization and charge asymmetry resulting from the high density of CN and CB bonds at the boundary between the GQDs and the h-BN domains. The saturation magnetic moment of h-CBN reaches 0.033 emu g^-1 at 300 K, which is three times that of as-prepared single carbon-doped h-BN.

Recent progress in synthesis, properties, and applications of hexagonal boron nitride-based heterostructures

Featuring an absence of dangling bonds, large band gap, low dielectric constant, and excellent chemical inertness, atomically thin hexagonal boron nitride (h-BN) is considered an ideal candidate for integration with graphene and other 2D materials. During the past years, great efforts have been devoted to the research of h-BN-based heterostructures, from fundamental study to practical applications. In this review we summarize the recent progress in the synthesis, novel properties, and potential applications of h-BN-based heterostructures, especially the synthesis technique. Firstly, various approaches to the preparation of both in-plane and vertically stacked h-BN-based heterostructures are introduced in detail, including top-down strategies associated with exfoliation transfer processes and bottom-up strategies such as chemical vapor deposition (CVD)-based growth. Secondly, we discuss some novel properties arising in these heterostructures. Several promising applications in electronic and optoelectronic devices are also reviewed. Finally, we discuss the main challenges and possible research directions in this field.

Graphene/transition metal dichalcogenides hybrid supercapacitor electrode: status, challenges, and perspectives

Supercapacitors, based on fast ion transportation, are among the most promising energy storage solutions that can deliver fast charging-discharging within seconds and exhibit excellent cycling stability. The development of a good electrode material is one of the key factors in enhancing supercapacitor performance. Graphene (G), an allotrope of carbon that consists of a single layer of carbon atoms arranged in a hexagonal lattice, elicits research attention among scientists in the field of energy storage due to its remarkable properties, such as outstanding electrical conductivity, good chemical stability, and excellent mechanical behavior. Furthermore, numerous studies focus on 2D materials that are analogous to graphene as electrode supercapacitors, including transition metal dichalcogenides (TMDs). Recently, scientists and researchers are exploring TMDs because of the distinct features that make 2D TMDs highly attractive for capacitive energy storage. This study provides an overview of the structure, properties, synthesis methods, and electrochemical performance of G/TMD supercapacitors. Furthermore, the combination of G and TMDs to develop a hybrid structure may increase their energy density by introducing an asymmetric supercapacitor system. We will also discuss the future prospect of this system in the energy field.

Non-phase-separated 2D B-C-N alloys via molecule-like carbon doping in 2D BN: atomic structures and optoelectronic properties

Two-dimensional (2D) B-C-N alloys have recently attracted much attention but unfortunately, Chemical Vapor Deposition (CVD) B-C-N alloys typically phase separate. In spite of that, our analysis of the B-C-N alloy fabricated by electron-beam irradiation suggests that non-phase-separated B-C-N may in fact exist with a carbon concentration up to 14 at%. While this analysis points to a new way to overcome the phase-separation in 2D B-C-N, by first-principles calculations, we show that these B-C-N alloys are made of motifs with even numbers of carbon atoms, in particular, dimers or six-fold rings (in a molecule-like form), embedded in a 2D BN network. Moreover, by tuning the carbon concentration, the band gap of the B-C-N alloys can be reduced by 35% from that of BN. Due to a strong overlap of the wavefunctions at the conduction band and valance band edges, the non-phase-separated B-C-N alloys maintain the strong optical absorption of BN.

Building Structures Atom by Atom via Electron Beam Manipulation

Building materials from the atom up is the pinnacle of materials fabrication. Until recently the only platform that offered single-atom manipulation was scanning tunneling microscopy. Here controlled manipulation and assembly of a few atom structures are demonstrated by bringing together single atoms using a scanning transmission electron microscope. An atomically focused electron beam is used to introduce Si substitutional defects and defect clusters in graphene with spatial control of a few nanometers and enable controlled motion of Si atoms. The Si substitutional defects are then further manipulated to form dimers, trimers, and more complex structures. The dynamics of a beam-induced atomic-scale chemical process is captured in a time-series of images at atomic resolution. These studies suggest that control of the e-beam-induced local processes offers the next step toward atom-by-atom nanofabrication, providing an enabling tool for the study of atomic-scale chemistry in 2D materials and fabrication of predefined structures and defects with atomic specificity.

Recent Advances in Synthesis and Applications of 2D Junctions

Recent progress in the methods of integration of 2D materials is reviewed. Integrated 2D circuits are one of the most promising candidates for advanced electronics and flexible devices. Specifically, methods such as mechanical transfer, chemical vapor deposition growth, high temperature conversion, phase engineering, surface doping, electrostatic doping, and so on to fabricate 2D heterostructures are discussed in detail. Applications of these integrated 2D heterostructures in p-n junctions, ohmic contact, high-performance transistors, and phototransistors are also highlighted. Finally, challenges and opportunities of methods to integrate 2D materials are proposed.

Exploring dissociative water adsorption on isoelectronically BN doped graphene using alchemical derivatives

The design and production of novel 2-dimensional materials have seen great progress in the last decade, prompting further exploration of the chemistry of such materials. Doping and hydrogenating graphene are an experimentally realised method of changing its surface chemistry, but there is still a great deal to be understood on how doping impacts on the adsorption of molecules. Developing this understanding is key to unlocking the potential applications of these materials. High throughput screening methods can provide particularly effective ways to explore vast chemical compositions of materials. Here, alchemical derivatives are used as a method to screen the dissociative adsorption energy of water molecules on various BN doped topologies of hydrogenated graphene. The predictions from alchemical derivatives are assessed by comparison to density functional theory. This screening method is found to predict dissociative adsorption energies that span a range of more than 2 eV, with a mean absolute error <0.1 eV. In addition, we show that the quality of such predictions can be readily assessed by examination of the Kohn-Sham highest occupied molecular orbital in the initial states. In this way, the root mean square error in the dissociative adsorption energies of water is reduced by almost an order of magnitude (down to ∼0.02 eV) after filtering out poor predictions. The findings point the way towards a reliable use of first order alchemical derivatives for efficient screening procedures.

A Scalable Approach to Dendrite-Free Lithium Anodes via Spontaneous Reduction of Spray-Coated Graphene Oxide Layers

Li-metal batteries (LiMBs) are experiencing a renaissance; however, achieving scalable production of dendrite-free Li anodes for practical application is still a formidable challenge. Herein, a facile and universal method is developed to directly reduce graphene oxide (GO) using alkali metals (e.g., Li, Na, and K) in moderate conditions. Based on this innovation, a spontaneously reduced graphene coating can be designed and modulated on a Li surface (SR-G-Li). The symmetrical SR-G-Li|SR-G-Li cell can run up to 1000 cycles at a high practical current density of 5 mA cm-2 without a short circuit, demonstrating one of the longest lifespans reported with LiPF6 -based carbonate electrolytes. More significantly, a practically scalable paradigm is established to fabricate dendrite-free Li anodes by spraying a GO layer on the Li anode surface for large-scale production of LiFePO4 /Li pouch cells, reflected by the continuous manufacturing of the SR-G-Li anodes based on the roll-to-roll technology. The strategy provides new commercial opportunities to both LiMBs and graphene.

Regioselectivity in hexagonal boron nitride co-doped graphene

The active electron transfer (ET) sites on the graphene surface can be controlled by hexagonal boron nitride (h-BN) doping.

Growth of Graphene/h-BN Heterostructures on Recyclable Pt Foils by One-Batch Chemical Vapor Deposition

High-quality large-area graphene/h-BN vertical heterostructures are promising building blocks for many viable applications such as energy harvesting/conversion, electronics and optoelectronics. Here, we successfully grew high-quality large-area graphene/h-BN vertical heterostructures on Pt foils by one-batch low-pressure chemical vapor deposition (LPCVD). We obtained the high quality of about 200-µm-wide graphene/h-BN film having uniform layer thickness. Moreover, the obtained graphene/h-BN heterostructures exhibited field effect mobility of up to 7,200 cm²V⁻¹s⁻¹ at room temperature. These results suggest that such graphene/h-BN heterostructures on recyclable Pt foils grown by LPCVD are promising for high-performance graphene-based electronics.