Narrowband light detection via internal quantum efficiency manipulation of organic photodiodes

Conductive PEDOT-Dominant Surface of Transparent Electrode Patch via Selective Phase Transfer for Efficient Flexible Photoelectronic Devices

In this study, a conductive patch for a flexible organic optoelectronic device is proposed and implemented using a poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS) polymer electrode based on a transfer process to achieve its high conductivity with an efficient conductive pathway. This PEDOT-dominant surface is induced by phase inversion during the transfer process owing to the solvent affinity of the PSS phase. The PEDOT:PSS patch formed by the transfer process minimizes the power loss in a flexible optoelectronic device due to the improved charge collection and suppressed leakage current responses. In addition, the bending stability of the flexible photoelectronic device is also enhanced by maintaining performance for 1000 bending cycles. Therefore, in the fabrication of a transparent flexible conductive PEDOT:PSS patch, the transfer process of a conducting polymer constitutes an effective strategy that can improve conductivity and embellished morphology.

Enhanced SWIR Light Detection in Organic Semiconductor Photodetectors through Up-Conversion of Mid-Gap Trap States

Shortwave-infrared (SWIR) photodetectors are vital for many scientific and industrial applications including surveillance, quality control and inspection. In recent decades, photodetectors based on organic semiconductors have emerged, demonstrating potential to add real value to broadband and narrowband imaging and sensing scenarios, where factors such as thermal budget sensitivity, large area aperture necessity, cost considerations, and lightweight and conformal flexibility demands are prioritized. It is now recognized that the performance of organic photodetectors (OPDs), notably their specific detectivity, is ultimately limited by trap states, universally present in disordered semiconductors. This work adopts an approach of utilizing these mid-gap states to specifically create a SWIR photo-response. To this end, this work introduces a somewhat counter-intuitive approach of "trap-doping" in bulk heterojunction (BHJs) photodiodes, where small quantities of a guest organic molecule are intentionally incorporated into a semiconducting donor:acceptor host system. Following this approach, this work demonstrates a proof-of-concept for a visible-to-SWIR broadband OPD, approaching (and, to some extent, even exceeding) state-of-the-art performance across critical photodetector metrics. The trap-doping approach is, even though only a proof-of-concept currently, broadly applicable to various spectral windows. It represents a new modality for engineering photodetection using the unconventional strategy of turning a limitation into a feature.

Optoelectronic Devices for In-Sensor Computing

The demand for accurate perception of the physical world leads to a dramatic increase in sensory nodes. However, the transmission of massive and unstructured sensory data from sensors to computing units poses great challenges in terms of power-efficiency, transmission bandwidth, data storage, time latency, and security. To efficiently process massive sensory data, it is crucial to achieve data compression and structuring at the sensory terminals. In-sensor computing integrates perception, memory, and processing functions within sensors, enabling sensory terminals to perform data compression and data structuring. Here, vision sensors are adopted as an example and discuss the functions of electronic, optical, and optoelectronic hardware for visual processing. Particularly, hardware implementations of optoelectronic devices for in-sensor visual processing that can compress and structure multidimensional vision information are examined. The underlying resistive switching mechanisms of volatile/nonvolatile optoelectronic devices and their processing operations are explored. Finally, a perspective on the future development of optoelectronic devices for in-sensor computing is provided.

Multidimensional vision sensors for information processing

The visual scene in the physical world integrates multidimensional information (spatial, temporal, polarization, spectrum and so on) and typically shows unstructured characteristics. Conventional image sensors cannot process this multidimensional vision data, creating a need for vision sensors that can efficiently extract features from substantial multidimensional vision data. Vision sensors are able to transform the unstructured visual scene into featured information without relying on sophisticated algorithms and complex hardware. The response characteristics of sensors can be abstracted into operators with specific functionalities, allowing for the efficient processing of perceptual information. In this Review, we delve into the hardware implementation of multidimensional vision sensors, exploring their working mechanisms and design principles. We exemplify multidimensional vision sensors built on emerging devices and silicon-based system integration. We further provide benchmarking metrics for multidimensional vision sensors and conclude with the principle of device-system co-design and co-optimization.

Hybrid Organic-Si C-MOSFET Image Sensor Designed with Blue-, Green-, and Red-Sensitive Organic Photodiodes on Si C-MOSFET-Based Photo Signal Sensor Circuit

The resolution of Si complementary metal-oxide-semiconductor field-effect transistor (C-MOSFET) image sensors (CISs) has been intensively enhanced to follow the technological revolution of smartphones, AI devices, autonomous cars, robots, and drones, approaching the physical and material limits of a resolution increase in conventional Si CISs because of the low quantum efficiency (i.e., ~40%) and aperture ratio (i.e., ~60%). As a novel solution, a hybrid organic-Si image sensor was developed by implementing B, G, and R organic photodiodes on four n-MOSFETs for photocurrent sensing. Photosensitive organic donor and acceptor materials were designed with cost-effective small molecules, i.e., the B, G, and R donor and acceptor small molecules were Coumarin6 and C_60, DMQA and MePTC, and ZnPc and TiOPc, respectively. The output voltage sensing margins (i.e., photocurrent signal difference) of the hybrid organic-Si B, G, and R image sensor pixels presented results 17, 11, and 37% higher than those of conventional Si CISs. In addition, the hybrid organic-Si B, G, and R image sensor pixels could achieve an ideal aperture ratio (i.e., ~100%) compared with a Si CIS pixel using the backside illumination process (i.e., ~60%). Moreover, they may display a lower fabrication cost than image sensors because of the simple image sensor structure (i.e., hybrid organic-Si photodiode with four n-MOSFETs).

All-printed organic photodetectors with metal electrodes enabled by one-step solvent-mediated transfer printing technology

A one-step solvent-mediated transfer printing technology (sTPT) is proposed to fabricate printable silver (Ag) electrodes. This simple approach can realize the residuals in the active layer serving as the mediator due to the capillary action without the use of any additional solvent. The as-cast polydimethylsiloxane (PDMS) was used as the stamp in the fabrication process. The residual solvent and the as-cast PDMS stamps simplified the fabrication process, while the transfer-printed Ag electrodes presented favorable conductivity and improved hydrophobicity due to the presence of residual PDMS on the surface of Ag, indicating the superiority as the top electrode for organic photodetectors (OPDs). Compared to the devices with the top Ag electrodes fabricated by the conventional evaporation method, we demonstrated that the OPDs with transfer-printed Ag electrodes presented better performance than that of the reference devices, including suppressed dark current, enlarged linear dynamic range, shortened response time, and optimized durability. These improved performances can be attributed to the fewer traps at the interface between the active layer and Ag electrodes. The sTPT may be a promising method for the fabrication of OPDs owing to the simplified fabrication process and enhanced device performance.

Atto-Scale Noise Near-Infrared Organic Photodetectors Enabled by Controlling Interfacial Energetic Offset through Enhanced Anchoring Ability

The near-infrared (NIR) sensor technology is crucial for various applications such as autonomous driving and biometric tracking. Silicon photodetectors (SiPDs) are widely used in NIR applications; however, their scalability is limited by their crystalline properties. Organic photodetectors (OPDs) have attracted attention for NIR applications owing to their scalability, low-temperature processing, and notably low dark current density (JD), which is similar to that of SiPDs. However, the still high JD (at NIR band) and few measurements of noise equivalent powers (NEPs) pose challenges for accurate performance comparisons. This study addresses these issues by quantitatively characterizing the performance matrix and JD generation mechanism using electron-blocking layers (EBLs) in OPDs. The energy offset at an EBL/photosensitive layer interface determines the thermal activation energy and directly affects JD. A newly synthesized EBL (3PAFBr) substantially enhances the interfacial energy barrier by forming a homogeneous contact owing to the improved anchoring ability of 3PAFBr. As a result, the OPD with 3PAFBr yields a noise current of 852 aA (JD = 12.3 fA cm⁻2 at V → -0.1 V) and several femtowatt-scale NEPs. As far as it is known, this is an ultralow of JD in NIR OPDs. This emphasizes the necessity for quantitative performance characterization.

Surface Engineering of Perovskite Single Crystals by Atomic Layer Deposited Tin Oxide for Optical Communication

Perovskite single crystals with excellent physical properties have broad prospects in the field of optoelectronics. However, the presence of dangling bonds, surface dislocations, and chemical impurities results in high surface defect density and sensitivity to humidity. Unfortunately, there are relatively few surface engineering strategies for single perovskite single crystals. We present a strategy utilizing atomic layer deposited SnOx to passivate surface defects in perovskite single crystals. The photodetector prepared based on the modified FAPbBr3 single crystals exhibits a low dark current of 1.89 × 10-9 A at a 5 V bias, close to 4 times lower with respect to the pristine device, a high detectivity of 2.3 × 1010 jones, and a fast response time of 27 μs. Moreover, the photodetectors feature long-term operational stability because the presence of a dense SnOx capping layer hinders the ingress of moisture and diffusion of ions. We further demonstrate the promise of our perovskite single crystal detectors for real-time subaqueous optical communication.

An A-D-A'-D-A-Type Narrow Bandgap Electron Acceptor Based on Selenophene-Flanked Diketopyrrolopyrrole for Sensitive Near-Infrared Photodetection

Near-infrared organic photodetectors possess great application potential in night vision, optical communication, and image sensing, but their development is limited by the lack of narrow bandgap organic semiconductors. A-D-A'-D-A-type molecules, featuring multiple intramolecular charge transfer effects, offer a robust framework for achieving near-infrared light absorption. Herein, we report a novel A-D-A'-D-A-type narrow bandgap electron acceptor named DPPSe-4Cl, which incorporates a selenophene-flanked diketopyrrolopyrrole (Se-DPP) unit as its central A' component. This molecule demonstrates exceptional near-infrared absorption properties with an absorption onset reaching 1120 nm and a low optical bandgap of 1.11 eV, owing to the strong electron-withdrawing ability and quinoidal resonance effect induced by the Se-DPP unit. By implementing a doping compensation strategy assisted by Y6 to reduce the trap density in the photoactive layer, the optimized organic photodetector based on DPPSe-4Cl exhibited efficient spectral response and remarkable sensitivity in the range of 300-1100 nm. Particularly, a specific detectivity surpassing 1012 Jones in the wavelength range of 410-1030 nm is achieved. This work offers a promising approach for developing highly sensitive visible to near-infrared broadband photodetection technology using organic semiconductors.

Inkjet-printed high-performance and mechanically flexible organic photodiodes for optical wireless communication

Emerging areas such as the Internet of Things (IoT), wearable and wireless sensor networks require the implementation of optoelectronic devices that are cost-efficient, high-performing and capable of conforming to different surfaces. Organic semiconductors and their deposition via digital printing techniques have opened up new possibilities for optical devices that are particularly suitable for these innovative fields of application. In this work, we present the fabrication and characterization of high-performance organic photodiodes (OPDs) and their use as an optical receiver in an indoor visible light communication (VLC) system. We investigate and compare different device architectures including spin-coated, partially-printed, and fully-printed OPDs. The presented devices exhibited state-of-the-art performance and reached faster detection speeds than any other OPD previously reported as organic receivers in VLC systems. Finally, our results demonstrate that the high-performance of the fabricated OPDs can be maintained in the VLC system even after the fabrication method is transferred to a fully-inkjet-printed process deposited on a mechanically flexible substrate. A comparison between rigid and flexible samples shows absolute differences of only 0.2 b s-1 Hz-1 and 2.9 Mb s-1 for the spectral efficiency and the data rate, respectively.

Shortwave Infrared Organic Photodiodes Realized by Polaron Engineering

A novel approach for developing shortwave IR (SWIR) organic photodiodes (OPDs) using doped polymers is presented. SWIR OPDs are challenging to produce because of the limitations in extending the absorption of conjugated molecules and the high dark currents of SWIR-absorbing materials. Herein, it is shown that the conversion of bound polarons to free polarons by light energy can be utilized as an SWIR photodetection mechanism. To maximize the bound-polaron density and bound-to-free polaron ratio of the doped polymer film, the doping process is engineered and dopant molecules are diffused into the crystalline domain of the polymer matrix and a direct correlation between the bound-to-free polaron ratio and device performance is confirmed. The optimized double-doped SWIR OPD exhibits a high external quantum efficiency of 77 100% and specific detectivity of 1.11 × 1011 Jones against SWIR. These findings demonstrate the application potential of polarons as alternatives for Frenkel excitons in SWIR OPDs.

Ultra-Low Noise Level Infrared Quantum Dot Photodiodes with Self-Screenable Polymeric Optical Window

Quantum dot photodiodes (QPDs) have garnered significant attention because of their unparalleled near-infrared (NIR) detection capabilities, primarily attributable to their size-dependent bandgap tunability. Nevertheless, the broadband absorption spectrum of QPD engenders substantial noise floor within superfluous visible light regions, notably hindering their use in several emerging applications necessitating the detection of faint micro-light signals. To overcome these hurdles, a self-screenable NIR QPD featuring an internal optical filter with a thick polymeric interlayer to reduce electronic noise is demonstrated. This effectively screens out undesirable visible light regions while reducing the ionized defect owing to decreased density of state, yielding an extremely low dark current (≈1010 A cm-2 at V = -1 V). Consequently, the electronic noise spectral density is attained at levels below ≈10-27 -10-28 A2 Hz-1 , and responsivity (R) dropped to 92% within the visible light spectrum.

Visible-Light Communication with Lighting: RGB Wavelength Division Multiplexing OLEDs/OPDs Platform

A multichannel/multicolor visible light communication (VLC) system using entirely organic components, including organic light emitting diodes (OLEDs) and organic photodiodes (OPDs), is developed to demonstrate indoor lighting applications where the integration of OLEDs and OPDs has significant potential. To achieve this, tricolor (Red/Green/Blue(R/G/B))-selective OPD arrays for the receiver and tricolor OLED arrays for the emitter are developed. For (R/G/B)-selective OPDs, a Fabry-Pérot electrode to enhance color selectivity and a thick junction structure to effectively accommodate a wide range of driving voltages are introduced. For tricolor OLEDs, fluorescent-emitting materials are used to enhance the operating frequency in addition to introducing a cavity structure to achieve narrow emission. Utilizing these spectrally refined tricolor OPDs/OLEDs, a VLC system is designed for indoor lighting applications, and a systematic analysis of their signal-to-interference ratio dependence on the distance or angle between the transmitter and receiver is performed. The study's findings indicate the importance of emission angle-dependent wavelength shift of the OLED and the luminosity function, which varies with wavelength, in the R/G/B mixed-white-light-based VLC systems. Finally, the feasibility of VLC using tricolor OPDs/OLEDs in the real-life context of indoor white-color lighting is demonstrated, showing that the transmitted data patterns well-matched the received data patterns.

Near-Infrared Organic Photodetectors toward Skin-Integrated Photoplethysmography-Electrocardiography Multimodal Sensing System

In the fast-evolving landscape of decentralized and personalized healthcare, the need for multimodal biosensing systems that integrate seamlessly with the human body is growing rapidly. This presents a significant challenge in devising ultraflexible configurations that can accommodate multiple sensors and designing high-performance sensing components that remain stable over long periods. To overcome these challenges, ultraflexible organic photodetectors (OPDs) that exhibit exceptional performance under near-infrared illumination while maintaining long-term stability are developed. These ultraflexible OPDs demonstrate a photoresponsivity of 0.53 A W-1 under 940 nm, shot-noise-limited specific detectivity of 3.4 × 1013 Jones, and cut-off response frequency beyond 1 MHz at -3 dB. As a result, the flexible photoplethysmography sensor boasts a high signal-to-noise ratio and stable peak-to-peak amplitude under hypoxic and hypoperfusion conditions, outperforming commercial finger pulse oximeters. This ensures precise extraction of blood oxygen saturation in dynamic working conditions. Ultraflexible OPDs are further integrated with conductive polymer electrodes on an ultrathin hydrogel substrate, allowing for direct interface with soft and dynamic skin. This skin-integrated sensing platform provides accurate measurement of photoelectric and biopotential signals in a time-synchronized manner, reproducing the functionality of conventional technologies without their inherent limitations.

A high-performance dual-functional organic upconversion device with detectivity approaching 1013 Jones and photon-to-photon efficiency over 20

Organic upconversion devices (UCDs) are a cutting-edge technology and hot topic because of their advantages of low cost and convenience in the important applications of near-infrared (NIR) detection and imaging. However, to realize utilization of triplet excitons (T1), previous UCDs have the drawback of heavily relying on toxic and costly heavy-metal-doped emitters. More importantly, due to poor performance of the detecting unit and/or emitting unit, improving their detectivity (D*) and photon-to-photon conversion efficiency (ηp-p) is still a challenge for real applications. Here, we report a high-performance dual-functional purely organic UCD that has an outstanding D* approaching 1013 Jones and a high ηp-p of 20.1% in the NIR region, which are some of the highest values among those reported for UCDs. The high performance is credited to the excellent D* of the detecting unit, exceeding 1014 Jones, and is also attributed to efficient T1 utilization via a dual reverse intersystem crossing channel and high optical out coupling achieved via a high horizontal dipole ratio in the emitting unit. The high D* and ηp-p enable the UCD to detect 850 nm light at as little as 0.29 μW cm-2 and with a high display contrast of over 70 000 : 1, significantly improving the potential of practical applications of UCDs in NIR detection and imaging. Furthermore, a fast rise time and fall time of 8.9 and 14.8 μs are also achieved. Benefiting from the high performance, consequent applications of low-power pulse-state monitoring and fine-structure bio-imaging are successfully realized with high quality results by using our organic UCDs. These results demonstrate that our design not only eliminates dependence of UCDs on heavy-metal emitters, but also takes their performance and applications to a high level.

Fast Response, High Spectral Rejection Ratio, Self-Filtered Ultranarrowband Photodetectors Based on Perovskite Single-Crystal Heterojunctions

Narrowband photodetectors have wide application potential in high-resolution imaging and encrypted communication, due to their high-precision spectral resolution capability. In this work, we report a fast response, high spectral rejection ratio, and self-filtered ultranarrowband photodetector with a new mechanism, which introduces bulk recombination by doping Bi3+ and cooperates with surface recombination for further quenching photogenerated charges generated by short-wavelength-light excitation in perovskite single-crystal. A perovskite film focused on collecting charges is fabricated on the single crystal by a lattice-matched solution-processed epitaxial growth method. Due to the formation of PN heterojunctions, a narrowband photodetector in this mechanism has remarkable spectral selectivity and detection performance with an ultranarrow full width at half-maximum (FWHM) of 7.7 nm and a high spectral rejection ratio of 790, as well as a high specific detectivity up to 1.5 × 1010 Jones, a fast response speed with a rise time and fall time of ∼8 and 137 μs. The ultrafast and ultranarrow spectra response of self-filtered narrowband photodetector provides a new strategy in high-precision and high-resolution photoelectric detection.

Visible-Blind Narrowband Near-Infrared Photodetector for Precise Real-Time Photoplethysmography Measurement

The visible-blind narrowband photodetector (NPD) with spectral selective sensitivity to near-infrared (NIR) light is an important technology in the field of cardiovascular health assessment. However, the biological information carried by NIR light constantly changes signals with small amplitude and fast speed, which puts high requirements on the performance of detectors. Herein, visible-blind NIR NPDs were constructed by integrating solution-processable films of perovskite, CuSCN, and organic semiconductors. The NIR response was provided by the organic bulk heterojunction (OBHJ) film with a narrow band gap. A thick perovskite layer was applied to screen the incident visible light and suppress the leakage current in the dark state. CuSCN with a high LUMO level blocked the extraction of the visible-light-induced free electrons. The width of the response window was restricted by adjusting the band gap of the perovskite and the donor/acceptor ratio of the OBHJ film. The optimized NIR NPD exhibits a comprehensive performance including visible-blind response, a tunable response spectrum, a high responsivity/detectivity, and a short response time. In practical photoplethysmography measurements, the detector can record the human heart rate in real time through a noninvasive technique and precisely monitor the whole cardiac cycle, which provides an effective method for early detection of cardiovascular symptoms for timely diagnosis and treatment.

Si/Organic Integrated Narrowband Near-Infrared Photodetector

Spectrally selective narrowband photodetection is critical for near-infrared (NIR) imaging applications, such as for communicationand night-vision utilities. It is a long-standing challenge for detectors based on silicon, to achieve narrowband photodetection without integrating any optical filters. Here, this work demonstrates a NIR nanograting Si/organic (PBDBT-DTBT:BTP-4F) heterojunction photodetector (PD), which for the first time obtains the full-width-at-half-maximum (FWHM) of only 26 nm and fast response of 74 µs at 895 nm. The response peak can be successfully tailored from 895 to 977 nm. The sharp and narrow response NIR peak is inherently attributed to the coherent overlapping between the NIR transmission spectrum of organic layer and diffraction enhanced absorption peak of patterned nanograting Si substrates. The finite difference time domain (FDTD) physics calculation confirms the resonant enhancement peaks, which is well consistent with the experiment results. Meanwhile, the relative characterization indicates that the introduction of the organic film can promote carrier transfer and charge collection, facilitating efficient photocurrent generation. This new device design strategy opens up a new window in developing low-cost sensitive NIR narrowband detection.

Plasmonic-Enhanced Tunable Near-Infrared Photoresponse for Narrowband Organic Photodetectors

Near-infrared (NIR) narrowband organic photodetectors (OPDs) can be essential building blocks for emerging applications including wireless optical communication and light detection, but further improvement of their performances remains to be a great challenge. Herein, a light manipulation strategy combining solution-processable gold nanorings (AuNRs)-based hole transporting layer (HTL) and an optical microcavity is proposed to achieve high-performance NIR narrowband OPDs. Optical microcavities with a Fabry-Pérot resonator structure, guided by theoretical simulation, are coupled with PM6:BTP-eC9-based OPDs to exhibit highly tunable NIR selectivity. The further integration of AuNRs array with NIR-customized localized surface plasmon resonance in the HTL of the NIR narrowband OPDs enables evident NIR absorption enhancement, yielding a specific detectivity exceeding 1013 Jones (1.5 × 1012 Jones, calculated from noise spectral density) at 820 nm, along with a finely selective photoresponse (full width at half-maximum of 80 nm) and a 3-fold increase in photocurrent intensity. Finally, the practical application of our OPDs is demonstrated in an NIR communication system. These results reveal the great potential of an appropriate optical design for developing highly performing NIR narrowband OPDs.

Electrical characterization of optical resonance effects in laterally-nanostructured organic photodetectors

Optoelectronic devices based on organic semiconductor materials are on the rise for sensing applications due to their integrability with a variety of substrates - including flexible substrates for wearables. For sensing applications often narrowband absorption is desired with suppression of light at other wavelengths. Here, we investigate narrowband absorption enhancement of organic photodetectors (OPD) with an integrated lateral nanostructure. We show with finite-element simulations, that resonant excitation of low absorbing wavelength regimes allow for up to 3 times the absolute absorption at wavelengths on resonance compared to wavelengths off resonance. We present experimental results for CuPc/C60 OPDs fabricated on grating nanostructures with periods of 350 nm and 400 nm and a grating depth of 140 nm as well as a grating period of 370 nm and grating depths of 30 nm. Angle-resolved transmission spectra clearly show the optical resonance effects. In order to evaluate the electrical resonance effects a measurement system is introduced based on angular laser excitation. An angular resolution of 0.1° is achieved in the analysis of the OPD photocurrent response. Using the measurement setup an increase of the photocurrent by up to 50% is observed for the TE-resonance. It is demonstrated that the resonance wavelength is tuned simply by adjusting the grating period without changes in the layer thicknesses. This opens up new opportunities in realizing pixels of different wavelength response next to each other employing a single active stack design.

Supramolecular interface decoration on a polymer conductor for an intrinsically stretchable near-infrared photodiode

Stretchable photodiodes with near-infrared (NIR) response face the challenge of material deficiency. A supramolecular cathode with excellent optical, tensile and electrical properties was proposed. Together with a stretchable organic heterojunction, we developed an intrinsically stretchable NIR photodiode with high detectivity over 1011 Jones and that remained functional under 100% strain.

A novel plasmonic metal-semiconductor-insulator-metal (MSIM) color sensor compatible with CMOS technology

Color detection is one of the top interests in both biological and industrial applications. Specifically, the Determination of the light wave characteristics is vital in photonic technology. One of the features in the color sense that should be found out is its wavelength or color. In this work, we propose a structure that can be used to detect RGB colors separately in an efficient way. The proposed detector consists of the plasmonic filter sensing desired wavelength (red, green, and blue) and the PN diode to convert the received photons to the electrical current. At the input intensity of 1 mW × cm-2, the current density for blue, green, and red colors are 27, 35, and 48 µA × cm-2, respectively. It is shown that the intensities needed to obtain the current densities of 0.1 µA × cm-2 are 3.94, 2.98, and 2.25 µW × cm-2 for the blue, green, and red spectra respectively. It should mention that by using high-precision photodetector structures such as PIN diode, the minimum detectable level can be decreased. Simple adjusting for desired wavelength and linear operation for different input intensities are the characteristics of the designed structure. This detector is compatible with CMOS technology and can be easily utilized in numerous applications, such as charge-coupled devices, displays, and cameras.

Retina-inspired narrowband perovskite sensor array for panchromatic imaging

The retina is the essential part of the human visual system that receives light, converts it to neural signal, and transmits to brain for visual recognition. The red, green, and blue (R/G/B) cone retina cells are natural narrowband photodetectors (PDs) sensitive to R/G/B lights. Connecting with these cone cells, a multilayer neuro-network in the retina provides neuromorphic preprocessing before transmitting to brain. Inspired by this sophistication, we develop the narrowband (NB) imaging sensor combining R/G/B perovskite NB sensor array (mimicking the R/G/B photoreceptors) with a neuromorphic algorithm (mimicking the intermediate neural network) for high-fidelity panchromatic imaging. Compared to commercial sensors, we use perovskite "intrinsic" NB PD to exempt the complex optical filter array. In addition, we use an asymmetric device configuration to collect photocurrent without external bias, enabling a power-free photodetection feature. These results display a promising design for efficient and intelligent panchromatic imaging.

A neuromorphic bionic eye with filter-free color vision using hemispherical perovskite nanowire array retina

Spherical geometry, adaptive optics, and highly dense network of neurons bridging the eye with the visual cortex, are the primary features of human eyes which enable wide field-of-view (FoV), low aberration, excellent adaptivity, and preprocessing of perceived visual information. Therefore, fabricating spherical artificial eyes has garnered enormous scientific interest. However, fusing color vision, in-device preprocessing and optical adaptivity into spherical artificial eyes has always been a tremendous challenge. Herein, we demonstrate a bionic eye comprising tunable liquid crystal optics, and a hemispherical neuromorphic retina with filter-free color vision, enabled by wavelength dependent bidirectional synaptic photo-response in a metal-oxide nanotube/perovskite nanowire hybrid structure. Moreover, by tuning the color selectivity with bias, the device can reconstruct full color images. This work demonstrates a unique approach to address the color vision and optical adaptivity issues associated with artificial eyes that can bring them to a new level approaching their biological counterparts.

De Novo Studies of Working Mechanisms for Self-Driven Narrowband Perovskite Photodetectors

Self-driven narrowband perovskite photodetectors have recently attracted significant attention due to their simple preparation, high performance, and amenability for system integration. However, the origin of narrowband photoresponse and the related regulation mechanisms still remains elusive. To address these issues, we herein perform a systematic investigation by formulating an analytic model in conjunction with finite element simulation. The optical and electrical simulations have resulted in design principles for perovskite narrowband photodetectors in terms of the dependence of external quantum efficiency (EQE) on perovskite layer thickness, doping concentration, and band gap as well as trap state concentration. Careful investigations on the profiles of electric field, current, and optical absorption reveal the dependence of narrowband EQE on the direction of incident light and perovskite doping types: only p-type perovskite can yield the narrowband photoresponse for illumination from the hole transport layer (HTL) side. The simulation results demonstrated in this study shed new light on the mechanism of perovskite-based narrowband photodetectors and provide valuable guidance for their design.

Architecturally simple organic photodiodes with highly competitive figures of merit via a facile self-assembly strategy

Photodetectors (PDs) based on organic materials exhibit potential advantages such as low-temperature processing, and superior mechanical properties and form factors. They have seen rapid strides toward achieving performance metrics comparable to inorganic counterparts. Here, a simplified device architecture is employed to realize stable and high-performance organic PDs (OPDs) while further easing the device fabrication process. In contrast to the sequential deposition of the hole blocking layer (HBL) and active layer (conventional 'two-step' processing), the proposed strategy forms a self-assembled HBL and active layer in a 'single-step' process. A high-performance UV-Vis-NIR OPD based on the PM6:BTP-eC9 system is demonstrated using this cost-effective processing strategy. The green solvent processed proof-of-concept device exhibits remarkable responsivity of ∼0.5 A W^-1, lower noise current than conventional two-step OPD, ultrafast rise/fall times of 1.4/1.6 μs (comparable to commercial silicon diode), and a broad linear dynamic range of 140 dB. Importantly, highly stable (light and heat) devices compared to those processed by the conventional method are realized. The broad application potential of this elegant strategy is proven by demonstrating the concept in three representative systems with broadband sensing competence.

Flexible Organic Photodetectors with Mechanically Robust Zinc Oxide Nanoparticle Thin Films

Zinc oxide nanoparticle (ZnO-NP) thin films have been intensively used as electron transport layers (ETLs) in organic optoelectronic devices, but their moderate mechanical flexibility hinders their application to flexible electronic devices. This study reveals that the multivalent interaction between ZnO-NPs and multicharged conjugated electrolytes, such as diphenylfluorene pyridinium bromide derivative (DFPBr-6), can significantly improve the mechanical flexibility of ZnO-NP thin films. Intermixing ZnO-NPs and DFPBr-6 facilitates the coordination between bromide anions (from the DFPBr-6) and zinc cations on ZnO-NP surfaces, forming Zn²⁺-Br^- bonds. Different from a conventional electrolyte (e.g., KBr), DFPBr-6 with six pyridinium ionic side chains holds the Br^--chelated ZnO-NPs adjacent to DFP⁺ through Zn²⁺-Br^--N⁺ bonds. Consequently, ZnO-NP:DFPBr-6 thin films exhibit improved mechanical flexibility with a critical bending radius as low as 1.5 mm under tensile bending conditions. Flexible organic photodetectors with ZnO-NP:DFPBr-6 thin films as ETLs demonstrate reliable device performances with high R (0.34 A/W) and D* (3.03 × 10¹² Jones) even after 1000 times repetitive bending at a bending radius of 4.0 mm, whereas devices with ZnO-NP and ZnO-NP:KBr ETLs yield >85% reduction in R and D* under the same bending condition.

Vitality surveillance at distance using thin-film tandem-like narrowband near-infrared photodiodes with light-enhanced responsivity

Remote measurement of vital sign parameters like heartbeat and respiration rate represents a compelling challenge in monitoring an individual's health in a noninvasive way. This could be achieved by large field-of-view, easy-to-integrate unobtrusive sensors, such as large-area thin-film photodiodes. At long distances, however, discriminating weak light signals from background disturbance demands superior near-infrared (NIR) sensitivity and optical noise tolerance. Here, we report an inherently narrowband solution-processed, thin-film photodiode with ultrahigh and controllable NIR responsivity based on a tandem-like perovskite-organic architecture. The device has low dark currents (<10^-6 mA cm^-2), linear dynamic range >150 dB, and operational stability over time (>8 hours). With a narrowband quantum efficiency that can exceed 200% at 850 nm and intrinsic filtering of other wavelengths to limit optical noise, the device exhibits higher tolerance to background light than optically filtered silicon-based sensors. We demonstrate its potential in remote monitoring by measuring the heart rate and respiration rate from distances up to 130 cm in reflection.

A Simple-Structured Perovskite Wavelength Sensor for Full-Color Imaging Application

In this study, simple-structured wavelength sensors were developed by depositing two back-to-back Au/MAPbI₃/Au photodetectors on an MAPbI₃ single crystal. This sensor could quantitatively distinguish wavelengths. Further device analysis showed that both photodetectors possess entirely disparate optoelectronic properties. Consequently, the as-developed wavelength sensor could accurately distinguish incident-light wavelengths ranging from 265 to 860 nm with a resolution of less than 1.5 nm based on the relation between the photocurrent ratios of both photodetectors and the incident light wavelengths. Notably, a high resolution and wide detection range are among the optimum reported values for such sensors and enable full-color imaging. Furthermore, technology computer-aided design (TCAD) simulations showed that a mechanism involved in distinguishing wavelengths is attributed to the wavelength-dependent photon generation rate in MAPbI₃ single crystals. The high-performance MAPbI₃ wavelength sensor can potentially drive the research progress of perovskites in wavelength recognition and full-color imaging.

Flexible Miniaturized Multispectral Detector Derived from Blade-Coated Organic Narrowband Response Unit Array

Multispectral sensing is extremely desired in intelligent systems, e.g., autonomous vehicles, encrypted information communication, and health biometric monitoring, due to its highly sensitive spectral discrimination ability. Nevertheless, rigid bulky optics and delicate optical paths in devices significantly increase their complexity and size, which subsequently impede their integration in smart optoelectronic chips for universal applications. In this work, a filterless miniaturized multispectral photodetector is realized with an organic narrowband response unit array. With the manipulation of Frenkel exciton dissociation in active layers, a series of narrowband organic sensing units with full-width-at-half-maximum (fwhm) narrowing to ∼50 nm are achieved from 700 to 1050 nm with a laudable performance of responsivity of over 60 mA/W, -3 dB bandwidth over 10 kHz, linear dynamic range (LDR) reaching ∼120 dB, and a low noise current of less than 4 × 10^-14 A·Hz^-0.5. Furthermore, a 6 × 8 multispectral sensing array on a flexible substrate was fabricated with blade-coating. Assisted by a computational process, we successfully demonstrate the spectral recognition with a resolution of ∼50 nm and a mismatch of ∼10 nm. Finally, the function of matter identification is successfully achieved with our multispectral detector array.

Organic photodiodes: device engineering and applications

Organic photodiodes (OPDs) have shown great promise for potential applications in optical imaging, sensing, and communication due to their wide-range tunable photoelectrical properties, low-temperature facile processes, and excellent mechanical flexibility. Extensive research work has been carried out on exploring materials, device structures, physical mechanisms, and processing approaches to improve the performance of OPDs to the level of their inorganic counterparts. In addition, various system prototypes have been built based on the exhibited and attractive features of OPDs. It is vital to link the device optimal design and engineering to the system requirements and examine the existing deficiencies of OPDs towards practical applications, so this review starts from discussions on the required key performance metrics for different envisioned applications. Then the fundamentals of the OPD device structures and operation mechanisms are briefly introduced, and the latest development of OPDs for improving the key performance merits is reviewed. Finally, the trials of OPDs for various applications including wearable medical diagnostics, optical imagers, spectrometers, and light communications are reviewed, and both the promises and challenges are revealed.

Epitaxial Perovskite Single-Crystalline Heterojunctions for Filter-Free Ultra-Narrowband Detection with Tunable Spectral Responses

Narrowband photodetectors (NPDs) with the capability of detecting light within a selective wavelength range are in high demand for numerous emerging applications such as imaging systems, machine vision, and optical communication. Halide perovskite materials have been developed for eliminating the current complex filtering systems in NPDs due to their beneficial properties, while currently NPDs using perovskite materials are limited by hardly fully eliminated short wavelength response, low charge collection efficiency (CCE), complex fabrication process, and so forth. Herein, a series of perovskite single-crystalline heterojunctions (PSCHs) with a structure of Bi-MAPbX3/MAPbY3 are fabricated by liquid phase epitaxy for filter-free narrowband detection. By varying the halide component in the PSCH, the PSCH-based NPDs can realize continuously tunable spectral response range from blue to NIR regions and ultra-narrow full width at half-maximum (FWHM) of <20 nm. Specifically, the PSCH-based NPD with a high CCE under a large electric filed shows a high spectra rejection ratio of >1000, a fast response speed with rise/fall time of ∼160/∼225 μs, and long-term stability more than 3 months in ambient air. This work provides a simple strategy for designing low-cost and high-performance filter-free NPDs with a tunable spectral response.

Double-Layered Strategy for Broadband Photomultiplication-Type Organic Photodetectors and Achieving Narrowband Response in Violet, Red, and Near-Infrared Light

Broadband photomultiplication-type organic photodetectors (PM-OPDs) were prepared with PMBBDT:PY3Se-2V (1:1, wt/wt) as the absorbing layer (AL) and PC₇₁BM:P3HT (100:5, wt/wt) as the photomultiplication layer (PML) on the basis of the sandwich structure. The incident photons from ultraviolet light to the near-infrared region can be harvested by AL. The rather less P3HT in PML can produce plenty of isolated hole traps with P3HT surrounded by PC₇₁BM; the electron tunneling injection induced by trapped holes near the Ag electrode can lead to the photomultiplication (PM) phenomenon. The performance of PM-OPDs can be effectively improved by optimizing the AL thickness. The optimal PM-OPDs exhibit a broad spectral response from 300 to 1050 nm as well as an external quantum efficiency (EQE) of 5800% at 340 nm at 10 V bias, along with a specific detectivity (D*) of 3.78 × 10¹³ Jones. The spectral response of PM-OPDs is controlled by the trapped-hole distribution near the Ag electrode, primarily originating from the photogenerated holes in AL. To further optimize the spectral response of PM-OPDs, the optical filter layer (OFL) was used to manipulate light field distribution in AL. The violet, red, and near-infrared-light PM-OPDs were developed by employing different OFLs.

Menezes L, Tittl A, Ren H, Maier SA. Optical Metasurfaces for Energy Conversion

Nanostructured surfaces with designed optical functionalities, such as metasurfaces, allow efficient harvesting of light at the nanoscale, enhancing light-matter interactions for a wide variety of material combinations. Exploiting light-driven matter excitations in these artificial materials opens up a new dimension in the conversion and management of energy at the nanoscale. In this review, we outline the impact, opportunities, applications, and challenges of optical metasurfaces in converting the energy of incoming photons into frequency-shifted photons, phonons, and energetic charge carriers. A myriad of opportunities await for the utilization of the converted energy. Here we cover the most pertinent aspects from a fundamental nanoscopic viewpoint all the way to applications.

Electron-donating amine-interlayer induced n-type doping of polymer:nonfullerene blends for efficient narrowband near-infrared photo-detection

Inherently narrowband near-infrared organic photodetectors are highly desired for many applications, including biological imaging and surveillance. However, they suffer from a low photon-to-charge conversion efficiencies and utilize spectral narrowing techniques which strongly rely on the used material or on a nano-photonic device architecture. Here, we demonstrate a general and facile approach towards wavelength-selective near-infrared phtotodetection through intentionally n-doping 500-600 nm-thick nonfullerene blends. We show that an electron-donating amine-interlayer can induce n-doping, resulting in a localized electric field near the anode and selective collection of photo-generated carriers in this region. As only weakly absorbed photons reach this region, the devices have a narrowband response at wavelengths close to the absorption onset of the blends with a high spectral rejection ratio. These spectrally selective photodetectors exhibit zero-bias external quantum efficiencies of ~20-30% at wavelengths of 900-1100 nm, with a full-width-at-half-maximum of ≤50 nm, as well as detectivities of >10¹² Jones.

Bulk-Heterojunction Adjustment Enables a Self-filtering Organic Photodetector with a Narrowband Response

Image-sensor technology is the foundation of many emerging applications, where the photodetector is designed to interact with incoming photons that have specific colors or wavelengths. A color filter is therefore crucial to enable the selective spectral response of the photodetector and to eliminate the crosstalk interference resulting from ambient lights. Unfortunately, a reduced detection sensitivity of the photodetector is inevitable due to an imperfect light filtering, which greatly limits the practical applications of selective-response photodetectors. Herein, we demonstrate a bulk-heterojunction (BHJ) organic composite featuring a self-filtering light responsive characteristic. Through a careful optimization of the BHJ film, the organic photodetector (OPD) demonstrates a high-selective spectral response to the infrared (IR) radiation without the need of applying a color filter. As a result, the self-filtering top-illuminated OPD exhibits a narrowband external quantum efficiency (EQE) of 53% with a narrow full width at half-maximum (fwhm) of 56 nm centering at 1080 nm. A high responsivity of 0.46 A W^-1 is also achieved at 1080 nm wavelength due to the self-filtering characteristic.

Double-Side Selective Spectral Response Organic Photodetectors for Demultiplexing Optical Signals

Selective spectral response photodetectors (PDs) capable of accurately capturing the color of images have broad applications in industry and academia. Here, we demonstrate filter-free, wavelength-selective detection organic photodetectors (OPDs) with two distinct response ranges and having the planar bilayer heterojunction device structure by employing either a (semi-)transparent anode or a cathode as the incident light window. The resultant OPDs exhibit a responsivity of 51 mA W^-1 in the range 300-650 nm and 11 mA W^-1 in the range 650-850 nm under top illumination condition. Similarly, the devices show a responsivity of 2 mA W^-1 for the short-wavelength region and 131 mA W^-1 for the long-wavelength region when under bottom illumination condition, indicating a high responsivity ratio that meets the requirements for selective detection. Hence, our individual device not only works in either visible or NIR range but also provides narrowband detection with spectral widths down to 100 nm in the NIR range. The working mechanism of spectral selectivity is identified through quantitative analysis of the external quantum efficiency (EQE) spectra using optical modeling when compared to the OPDs with bulk heterojunction structure, thus clarifying the general validity of the device design concept. Finally, our OPDs can demultiplex intermixed optical signals from the light-communication system successfully. Our results should inspire new studies on the device design concept and new applications of OPDs.

Narrowband Near-Infrared Photodetectors Based on Perovskite Waveguide Devices

Organic-inorganic perovskites have attracted great interest for developing wavelength-selective photodetectors. Currently, the spectral response range of narrowband photodetectors is mainly concentrated within the visible light region, lacking near-infrared photodetectors. Here, we present perovskite narrowband near-infrared photodetectors achieved by transverse propagation of light in perovskite waveguide devices for the first time. The response spectra of photodetectors are continuously tuned from 750 to 1000 nm by changing the perovskite component and the position of the incident light with the full width at half-maximum of 25-80 nm. The theoretical and experimental results reveal that the typical perovskite photodetectors serve as an optical waveguide to confine and propagate the light, in which the long wavelength light propagates a longer distance; oppositely, the short wavelength light with the higher loss in devices fails to produce a photoresponse, owing to the wavelength dependent absorption of perovskite. This provides a new concept for designing narrowband photodetectors and will simulate new applications.

Intrinsic Linear Dichroism of Organic Single Crystals toward High-Performance Polarization-Sensitive Photodetectors

The ability to detect light in photodetectors is central to practical optoelectronic applications, which has been demonstrated in inorganic semiconductor devices. However, so far, the study of polarization-sensitive organic photodetectors, which have unique applications in flexible and wearable electronics, has not received much attention. Herein, the construction of polarization-sensitive photodetectors based on the single crystals of a superior optoelectronic organic semiconductor, 2,6-diphenyl anthracene (DPA), is demonstrated. The systematic characterization of two-dimensionally grown DPA crystals with various techniques definitely show their strong anisotropy in molecular vibration, optical reflectance and optical absorption. In terms of polarization sensitivity, DPA-crystal based photodetectors exhibit a linear dichroic ratio up to ≈1.9. Theoretical calculations confirm that intrinsic linear dichroism, originated from the anisotropic in-plane crystal structure, is responsible for the polarization sensitivity of DPA crystals. This work opens up a new door for exploiting organic semiconductors for developing highly compact polarization photodetectors and providing new functionalities in novel flexible optical and optoelectronic applications.

Emissive Charge-Transfer States at Hybrid Inorganic/Organic Heterojunctions Enable Low Non-Radiative Recombination and High-Performance Photodetectors

Hybrid devices based on a heterojunction between inorganic and organic semiconductors have offered a means to combine the advantages of both classes of materials in optoelectronic devices, but, in practice, the performance of such devices has often been disappointing. Here, it is demonstrated that charge generation in hybrid inorganic-organic heterojunctions consisting of copper thiocyanate (CuSCN) and a variety of molecular acceptors (ITIC, IT-4F, Y6, PC₇₀ BM, C₇₀ , C₆₀ ) proceeds via emissive charge-transfer (CT) states analogous to those found at all-organic heterojunctions. Importantly, contrary to what has been observed at previous organic-inorganic heterojunctions, the dissociation of the CT-exciton and subsequent charge separation is efficient, allowing the fabrication of planar photovoltaic devices with very low non-radiative voltage losses (0.21 ±  0.02 V). It is shown that such low non-radiative recombination enables the fabrication of simple and cost-effective near-IR (NIR) detectors with extremely low dark current (4 pA cm^-2 ) and noise spectral density (3 fA Hz^-1/2 ) at no external bias, leading to specific detectivities at NIR wavelengths of just under 10¹³ Jones, close to the performance of commercial silicon photodetectors. It is believed that this work demonstrates the possibility for hybrid heterojunctions to exploit the unique properties of both inorganic and organic semiconductors for high-performance opto-electronic devices.

Spray-Coating Thick Films of All-Inorganic Halide Perovskites for Filterless Narrowband Photodetectors

A significant challenge facing perovskite narrowband photodetectors is making high-quality and thick enough films. Here, we report a facile one-step spray-coating approach to deposit cesium lead halide perovskite thick films for filterless narrowband photodetectors, which exhibited a specific detectivity of 2.43 × 10¹⁰ Jones at 655 nm with an fwhm of 25 nm. We demonstrated that both substrate temperature and deposition time during the spray-coating process are key factors that govern the thickness and morphology of perovskite films. The photodetection behavior was dependent on the film thickness, and the narrowband photoresponse was recorded at a 3.9 μm thickness. We discovered that the internal electric field also plays a critical role in determining the narrowband photoresponse behavior. A distinct photoresponse behavior was observed when respectively applying a reverse bias and a forward bias, which is ascribed to the trade-off between the charge-trapping effect and charge extraction under the internal built-in electric field in different biased conditions. Through changing the halogen composition of perovskites from CsPbCl₂Br to CsPbI₂Br, the peak position of the narrowband spectral photoresponse was observed to shift from 460 to 660 nm. This study not only offers a controllable spray-coating approach to develop thick perovskite films but also provides an important guidance for the rational design of filterless narrowband photodetectors for practical applications in industrial control, visual imaging, and biological sensing.

Slip-Stacked J-Aggregate Materials for Organic Solar Cells and Photodetectors

Dye-dye interactions affect the optical and electronic properties in organic semiconductor films of light harvesting and detecting optoelectronic applications. This review elaborates how to tailor these properties of organic semiconductors for organic solar cells (OSCs) and organic photodiodes (OPDs). While these devices rely on similar materials, the demands for their optical properties are rather different, the former requiring a broad absorption spectrum spanning from the UV over visible up to the near-infrared region and the latter an ultra-narrow absorption spectrum at a specific, targeted wavelength. In order to design organic semiconductors satisfying these demands, fundamental insights on the relationship of optical properties are provided depending on molecular packing arrangement and the resultant electronic coupling thereof. Based on recent advancements in the theoretical understanding of intermolecular interactions between slip-stacked dyes, distinguishing classical J-aggregates with predominant long-range Coulomb coupling from charge transfer (CT)-mediated or -coupled J-aggregates, whose red-shifts are primarily governed by short-range orbital interactions, is suggested. Within this framework, the relationship between aggregate structure and functional properties of representative classes of dye aggregates is analyzed for the most advanced OSCs and wavelength-selective OPDs, providing important insights into the rational design of thin-film optoelectronic materials.

A Molecular-Switch-Embedded Organic Photodiode for Capturing Images against Strong Backlight

When the intensity of the incident light increases, the photocurrents of organic photodiodes (OPDs) exhibit relatively early saturation, due to which OPDs cannot easily detect objects against strong backlights, such as sunlight. In this study, this problem is addressed by introducing a light-intensity-dependent transition of the operation mode, such that the operation mode of the OPD autonomously changes to overcome early photocurrent saturation as the incident light intensity passes the threshold intensity. The photoactive layer is doped with a strategically designed and synthesized molecular switch, 1,2-bis-(2-methyl-5-(4-cyanobiphenyl)-3-thienyl)tetrafluorobenzene (DAB). The proposed OPD exhibits a typical OPD performance with an external quantum efficiency (EQE) of <100% and a photomultiplication behavior with an EQE of >100% under low-intensity and high-intensity light illuminations, respectively, thereby resulting in an extension of the photoresponse linearity to a light intensity of 434 mW cm^-2 . This unique and reversible transition of the operation mode can be explained by the unbalanced quantum yield of photocyclization/photocycloreversion of the molecular switch. The details of the operation mechanism are discussed in conjunction with various photophysical analyses. Furthermore, they establish a prototype image sensor with an array of molecular-switch-embedded OPD pixels to demonstrate their extremely high sensitivity against strong light illumination.

Solution-Processed CsPbBr3 Quantum Dots/Organic Semiconductor Planar Heterojunctions for High-Performance Photodetectors

Planar heterojunctions (PHJs) are fundamental building blocks for construction of semiconductor devices. However, fabricating PHJs with solution-processable semiconductors such as organic semiconductors (OSCs) is a challenge. Herein, utilizing the orthogonal solubility and good wettability between CsPbBr₃ perovskite quantum dots (PQDs) and OSCs, fabrication of solution-processed PQD/OSC PHJs are reported. The phototransistors based on bilayer PQD/PDVT-10 PHJs show responsivity up to 1.64 × 10⁴ A W^-1 , specific detectivity of 3.17 × 10¹² Jones, and photosensitivity of 5.33 × 10⁶ when illuminated by 450 nm light. Such high photodetection performance is attributed to efficient charge dissociation and transport, as well as the photogating effect in the PHJs. Furthermore, the tri-layer PDVT-10/PQD/Y6 PHJs are used to construct photodiodes working in self-powered mode, which exhibit broad range photoresponse from ultraviolet to near-infrared, with responsivity approaching 10^-1 A W^-1 and detectivity over 10⁶ Jones. These results present a convenient and scalable production processes for solution-processed PHJs and show their great potential for optoelectronic applications.

Infrared Organic Photodetectors Employing Ultralow Bandgap Polymer and Non-Fullerene Acceptors for Biometric Monitoring

Recent efforts in the field of organic photodetectors (OPD) have been focused on extending broadband detection into the near-infrared (NIR) region. Here, two blends of an ultralow bandgap push-pull polymer TQ-T combined with state-of-the-art non-fullerene acceptors, IEICO-4F and Y6, are compared to obtain OPDs for sensing in the NIR beyond 1100 nm, which is the cut off for benchmark Si photodiodes. It is observed that the TQ-T:IEICO-4F device has a superior IR responsivity (0.03 AW^-1 at 1200 nm and -2 V bias) and can detect infrared light up to 1800 nm, while the TQ-T:Y6 blend shows a lower responsivity of 0.01 AW^-1 . Device physics analyses are tied with spectroscopic and morphological studies to link the superior performance of TQ-T:IEICO-4F OPD to its faster charge separation as well as more favorable donor-acceptor domains mixing. In the polymer blend with Y6, the formation of large agglomerates that exceed the exciton diffusion length, which leads to high charge recombination, is observed. An application of these devices as biometric sensors for real-time heart rate monitoring via photoplethysmography, utilizing infrared light, is demonstrated.

Photomultiplication-Type Organic Photodetectors for Near-Infrared Sensing with High and Bias-Independent Specific Detectivity

Highly responsive organic photodetectors allow a plethora of applications in fields like imaging, health, security monitoring, etc. Photomultiplication-type organic photodetectors (PM-OPDs) are a desirable option due to their internal amplification mechanism. However, for such devices, significant gain and low dark currents are often mutually excluded since large operation voltages often induce high shot noise. Here, a fully vacuum-processed PM-OPD is demonstrated using trap-assisted electron injection in BDP-OMe:C₆₀ material system. By applying only -1 V, compared with the self-powered working condition, the responsivity is increased by one order of magnitude, resulting in an outstanding specific detectivity of ≈10¹³  Jones. Remarkably, the superior detectivity in the near-infrared region is stable and almost voltage-independent up to -10 V. Compared with two photovoltaic-type photodetectors, these PM-OPDs exhibit the great potential to be easily integrated with state-of-the-art readout electronics in terms of their high responsivity, fast response speed, and bias-independent specific detectivity. The employed vacuum fabrication process and the easy-to-adapt PM-OPD concept enable seamless upscaling of production, paving the way to a commercially relevant photodetector technology.

Controlled Localized Phase Transition of Selenium for Color-Selective Photodetectors

Color-selective photodetectors are widely applied in several fields; however, they suffer from complex fabrication and low resolution. Herein, we propose a simple and convenient design to achieve a logical color-selective heterojunction photodetector composed of CdS and Se with a crystalline/amorphous mixed state. The as-deposited amorphous Se top layer in the heterojunction is partly transformed to trigonal crystalline Se by localized in situ phase transformation during annealing. As these two heterojunctions have different photoresponses under the same wavelength, the integrated device can accurately identify red, green, and blue light via logical judgment. Finally, the device exhibits high recognition ability in actual tests. This work provides a potential development of high-resolution color-selective photodetectors for visible light communication and logical photoelectric devices.

Narrowband organic photodetectors - towards miniaturized, spectroscopic sensing

Omnipresent quality monitoring in food products, blood-oxygen measurement in lightweight conformal wrist bands, or data-driven automated industrial production: Innovation in many fields is being empowered by sensor technology. Specifically, organic photodetectors (OPDs) promise great advances due to their beneficial properties and low-cost production. Recent research has led to rapid improvement in all performance parameters of OPDs, which are now on-par or better than their inorganic counterparts, such as silicon or indium gallium arsenide photodetectors, in several aspects. In particular, it is possible to directly design OPDs for specific wavelengths. This makes expensive and bulky optical filters obsolete and allows for miniature detector devices. In this review, recent progress of such narrowband OPDs is systematically summarized covering all aspects from narrow-photo-absorbing materials to device architecture engineering. The recent challenges for narrowband OPDs, like achieving high responsivity, low dark current, high response speed, and good dynamic range are carefully addressed. Finally, application demonstrations covering broadband and narrowband OPDs are discussed. Importantly, several exciting research perspectives, which will stimulate further research on organic-semiconductor-based photodetectors, are pointed out at the very end of this review.