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Lee J, Kim MS, Jang W, Wang DH. Conductive PEDOT-Dominant Surface of Transparent Electrode Patch via Selective Phase Transfer for Efficient Flexible Photoelectronic Devices. ACS APPLIED MATERIALS & INTERFACES 2024; 16:38310-38323. [PMID: 38988312 DOI: 10.1021/acsami.4c07526] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/12/2024]
Abstract
In this study, a conductive patch for a flexible organic optoelectronic device is proposed and implemented using a poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS) polymer electrode based on a transfer process to achieve its high conductivity with an efficient conductive pathway. This PEDOT-dominant surface is induced by phase inversion during the transfer process owing to the solvent affinity of the PSS phase. The PEDOT:PSS patch formed by the transfer process minimizes the power loss in a flexible optoelectronic device due to the improved charge collection and suppressed leakage current responses. In addition, the bending stability of the flexible photoelectronic device is also enhanced by maintaining performance for 1000 bending cycles. Therefore, in the fabrication of a transparent flexible conductive PEDOT:PSS patch, the transfer process of a conducting polymer constitutes an effective strategy that can improve conductivity and embellished morphology.
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Affiliation(s)
- Junmin Lee
- Department of Intelligent Semiconductor Engineering, Chung-Ang University, 84 Heukseok-ro, Dongjak-gu, Seoul 06974, Republic of Korea
| | - Min Soo Kim
- Department of Intelligent Semiconductor Engineering, Chung-Ang University, 84 Heukseok-ro, Dongjak-gu, Seoul 06974, Republic of Korea
| | - Woongsik Jang
- Department of Intelligent Semiconductor Engineering, Chung-Ang University, 84 Heukseok-ro, Dongjak-gu, Seoul 06974, Republic of Korea
| | - Dong Hwan Wang
- Department of Intelligent Semiconductor Engineering, Chung-Ang University, 84 Heukseok-ro, Dongjak-gu, Seoul 06974, Republic of Korea
- School of Integrative Engineering, Chung-Ang University, 84 Heukseok-Ro, Dongjak-gu, Seoul 06974, Republic of Korea
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2
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Zeiske S, Zarrabi N, Sandberg OJ, Gielen S, Maes W, Meredith P, Armin A. Enhanced SWIR Light Detection in Organic Semiconductor Photodetectors through Up-Conversion of Mid-Gap Trap States. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2405061. [PMID: 39044625 DOI: 10.1002/adma.202405061] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/08/2024] [Revised: 06/19/2024] [Indexed: 07/25/2024]
Abstract
Shortwave-infrared (SWIR) photodetectors are vital for many scientific and industrial applications including surveillance, quality control and inspection. In recent decades, photodetectors based on organic semiconductors have emerged, demonstrating potential to add real value to broadband and narrowband imaging and sensing scenarios, where factors such as thermal budget sensitivity, large area aperture necessity, cost considerations, and lightweight and conformal flexibility demands are prioritized. It is now recognized that the performance of organic photodetectors (OPDs), notably their specific detectivity, is ultimately limited by trap states, universally present in disordered semiconductors. This work adopts an approach of utilizing these mid-gap states to specifically create a SWIR photo-response. To this end, this work introduces a somewhat counter-intuitive approach of "trap-doping" in bulk heterojunction (BHJs) photodiodes, where small quantities of a guest organic molecule are intentionally incorporated into a semiconducting donor:acceptor host system. Following this approach, this work demonstrates a proof-of-concept for a visible-to-SWIR broadband OPD, approaching (and, to some extent, even exceeding) state-of-the-art performance across critical photodetector metrics. The trap-doping approach is, even though only a proof-of-concept currently, broadly applicable to various spectral windows. It represents a new modality for engineering photodetection using the unconventional strategy of turning a limitation into a feature.
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Affiliation(s)
- Stefan Zeiske
- Sustainable Advanced Materials (Sêr-SAM), Centre for Integrative Semiconductor Materials and Department of Physics, Swansea University Bay Campus, Fabian Way, Swansea, SA1 8EN, UK
- Department of Chemistry, Northwestern University, 2145 Sheridan Rd, Evanston, IL, 60208, USA
| | - Nasim Zarrabi
- Sustainable Advanced Materials (Sêr-SAM), Centre for Integrative Semiconductor Materials and Department of Physics, Swansea University Bay Campus, Fabian Way, Swansea, SA1 8EN, UK
| | - Oskar J Sandberg
- Sustainable Advanced Materials (Sêr-SAM), Centre for Integrative Semiconductor Materials and Department of Physics, Swansea University Bay Campus, Fabian Way, Swansea, SA1 8EN, UK
- Physics, Faculty of Science and Engineering, Åbo Akademi University, Turku, 20500, Finland
| | - Sam Gielen
- Institute for Materials Research (IMO), Hasselt University, Agoralaan 1, Diepenbeek, B-3590, Belgium
- IMEC, Associated Lab IMOMEC, Wetenschapspark 1, Diepenbeek, B-3590, Belgium
| | - Wouter Maes
- Institute for Materials Research (IMO), Hasselt University, Agoralaan 1, Diepenbeek, B-3590, Belgium
- IMEC, Associated Lab IMOMEC, Wetenschapspark 1, Diepenbeek, B-3590, Belgium
| | - Paul Meredith
- Sustainable Advanced Materials (Sêr-SAM), Centre for Integrative Semiconductor Materials and Department of Physics, Swansea University Bay Campus, Fabian Way, Swansea, SA1 8EN, UK
| | - Ardalan Armin
- Sustainable Advanced Materials (Sêr-SAM), Centre for Integrative Semiconductor Materials and Department of Physics, Swansea University Bay Campus, Fabian Way, Swansea, SA1 8EN, UK
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3
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Ren Q, Zhu C, Ma S, Wang Z, Yan J, Wan T, Yan W, Chai Y. Optoelectronic Devices for In-Sensor Computing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2407476. [PMID: 39004873 DOI: 10.1002/adma.202407476] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/26/2024] [Revised: 06/27/2024] [Indexed: 07/16/2024]
Abstract
The demand for accurate perception of the physical world leads to a dramatic increase in sensory nodes. However, the transmission of massive and unstructured sensory data from sensors to computing units poses great challenges in terms of power-efficiency, transmission bandwidth, data storage, time latency, and security. To efficiently process massive sensory data, it is crucial to achieve data compression and structuring at the sensory terminals. In-sensor computing integrates perception, memory, and processing functions within sensors, enabling sensory terminals to perform data compression and data structuring. Here, vision sensors are adopted as an example and discuss the functions of electronic, optical, and optoelectronic hardware for visual processing. Particularly, hardware implementations of optoelectronic devices for in-sensor visual processing that can compress and structure multidimensional vision information are examined. The underlying resistive switching mechanisms of volatile/nonvolatile optoelectronic devices and their processing operations are explored. Finally, a perspective on the future development of optoelectronic devices for in-sensor computing is provided.
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Affiliation(s)
- Qinqi Ren
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, 999077, China
- Joint Research Centre of Microelectronics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, 999077, China
| | - Chaoyi Zhu
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, 999077, China
- Joint Research Centre of Microelectronics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, 999077, China
| | - Sijie Ma
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, 999077, China
- Joint Research Centre of Microelectronics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, 999077, China
| | - Zhaoqing Wang
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, 999077, China
- Joint Research Centre of Microelectronics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, 999077, China
| | - Jianmin Yan
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, 999077, China
- Joint Research Centre of Microelectronics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, 999077, China
| | - Tianqing Wan
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, 999077, China
- Joint Research Centre of Microelectronics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, 999077, China
| | - Weicheng Yan
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, 999077, China
- Joint Research Centre of Microelectronics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, 999077, China
| | - Yang Chai
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, 999077, China
- Joint Research Centre of Microelectronics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, 999077, China
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Wang Z, Wan T, Ma S, Chai Y. Multidimensional vision sensors for information processing. NATURE NANOTECHNOLOGY 2024; 19:919-930. [PMID: 38877323 DOI: 10.1038/s41565-024-01665-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/24/2023] [Accepted: 03/07/2024] [Indexed: 06/16/2024]
Abstract
The visual scene in the physical world integrates multidimensional information (spatial, temporal, polarization, spectrum and so on) and typically shows unstructured characteristics. Conventional image sensors cannot process this multidimensional vision data, creating a need for vision sensors that can efficiently extract features from substantial multidimensional vision data. Vision sensors are able to transform the unstructured visual scene into featured information without relying on sophisticated algorithms and complex hardware. The response characteristics of sensors can be abstracted into operators with specific functionalities, allowing for the efficient processing of perceptual information. In this Review, we delve into the hardware implementation of multidimensional vision sensors, exploring their working mechanisms and design principles. We exemplify multidimensional vision sensors built on emerging devices and silicon-based system integration. We further provide benchmarking metrics for multidimensional vision sensors and conclude with the principle of device-system co-design and co-optimization.
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Affiliation(s)
- Zhaoqing Wang
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
- Joint Research Centre of Microelectronics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
| | - Tianqing Wan
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
- Joint Research Centre of Microelectronics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
| | - Sijie Ma
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
- Joint Research Centre of Microelectronics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
| | - Yang Chai
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China.
- Joint Research Centre of Microelectronics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China.
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Jeong UH, Park JH, Choi JH, Lee WG, Park JG. Hybrid Organic-Si C-MOSFET Image Sensor Designed with Blue-, Green-, and Red-Sensitive Organic Photodiodes on Si C-MOSFET-Based Photo Signal Sensor Circuit. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:1066. [PMID: 38998671 PMCID: PMC11243616 DOI: 10.3390/nano14131066] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/13/2024] [Revised: 06/08/2024] [Accepted: 06/12/2024] [Indexed: 07/14/2024]
Abstract
The resolution of Si complementary metal-oxide-semiconductor field-effect transistor (C-MOSFET) image sensors (CISs) has been intensively enhanced to follow the technological revolution of smartphones, AI devices, autonomous cars, robots, and drones, approaching the physical and material limits of a resolution increase in conventional Si CISs because of the low quantum efficiency (i.e., ~40%) and aperture ratio (i.e., ~60%). As a novel solution, a hybrid organic-Si image sensor was developed by implementing B, G, and R organic photodiodes on four n-MOSFETs for photocurrent sensing. Photosensitive organic donor and acceptor materials were designed with cost-effective small molecules, i.e., the B, G, and R donor and acceptor small molecules were Coumarin6 and C_60, DMQA and MePTC, and ZnPc and TiOPc, respectively. The output voltage sensing margins (i.e., photocurrent signal difference) of the hybrid organic-Si B, G, and R image sensor pixels presented results 17, 11, and 37% higher than those of conventional Si CISs. In addition, the hybrid organic-Si B, G, and R image sensor pixels could achieve an ideal aperture ratio (i.e., ~100%) compared with a Si CIS pixel using the backside illumination process (i.e., ~60%). Moreover, they may display a lower fabrication cost than image sensors because of the simple image sensor structure (i.e., hybrid organic-Si photodiode with four n-MOSFETs).
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Affiliation(s)
- Ui-Hyun Jeong
- Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Joo-Hyeong Park
- Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea
- Samsung Advanced Institute of Technology, 129, Samsung-ro, Yeongtong-gu, Suwon-si 16677, Republic of Korea
| | - Ji-Ho Choi
- Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Woo-Guk Lee
- Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Jea-Gun Park
- Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea
- Advanced Semiconductor Materials & Devices Development Center, Hanyang University, Seoul 04763, Republic of Korea
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Zhou P, Gu J, Fan L, Ma J, Lian H, Shi W, Wei B. All-printed organic photodetectors with metal electrodes enabled by one-step solvent-mediated transfer printing technology. NANOSCALE 2024; 16:10682-10689. [PMID: 38687297 DOI: 10.1039/d3nr06516b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/02/2024]
Abstract
A one-step solvent-mediated transfer printing technology (sTPT) is proposed to fabricate printable silver (Ag) electrodes. This simple approach can realize the residuals in the active layer serving as the mediator due to the capillary action without the use of any additional solvent. The as-cast polydimethylsiloxane (PDMS) was used as the stamp in the fabrication process. The residual solvent and the as-cast PDMS stamps simplified the fabrication process, while the transfer-printed Ag electrodes presented favorable conductivity and improved hydrophobicity due to the presence of residual PDMS on the surface of Ag, indicating the superiority as the top electrode for organic photodetectors (OPDs). Compared to the devices with the top Ag electrodes fabricated by the conventional evaporation method, we demonstrated that the OPDs with transfer-printed Ag electrodes presented better performance than that of the reference devices, including suppressed dark current, enlarged linear dynamic range, shortened response time, and optimized durability. These improved performances can be attributed to the fewer traps at the interface between the active layer and Ag electrodes. The sTPT may be a promising method for the fabrication of OPDs owing to the simplified fabrication process and enhanced device performance.
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Affiliation(s)
- Pengchao Zhou
- Affiliated Hospital of Jining Medical University, Jining, Shandong 273500, P. R. China
- School of Mechatronic Engineering and Automation, Shanghai University, Shanghai 200072, P. R. China.
| | - Jialu Gu
- School of Mechatronic Engineering and Automation, Shanghai University, Shanghai 200072, P. R. China.
- Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072, P. R. China
| | - Lei Fan
- Affiliated Hospital of Jining Medical University, Jining, Shandong 273500, P. R. China
| | - Jipeng Ma
- Affiliated Hospital of Jining Medical University, Jining, Shandong 273500, P. R. China
| | - Hong Lian
- School of Mechatronic Engineering and Automation, Shanghai University, Shanghai 200072, P. R. China.
- Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072, P. R. China
| | - Wei Shi
- School of Mechatronic Engineering and Automation, Shanghai University, Shanghai 200072, P. R. China.
- Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072, P. R. China
| | - Bin Wei
- School of Mechatronic Engineering and Automation, Shanghai University, Shanghai 200072, P. R. China.
- Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072, P. R. China
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Kim TH, Lee JH, Jang MH, Lee GM, Shim ES, Oh S, Saeed MA, Lee MJ, Yu BS, Hwang DK, Park CW, Lee SY, Jo JW, Shim JW. Atto-Scale Noise Near-Infrared Organic Photodetectors Enabled by Controlling Interfacial Energetic Offset through Enhanced Anchoring Ability. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2403647. [PMID: 38708960 DOI: 10.1002/adma.202403647] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/11/2024] [Revised: 04/23/2024] [Indexed: 05/07/2024]
Abstract
The near-infrared (NIR) sensor technology is crucial for various applications such as autonomous driving and biometric tracking. Silicon photodetectors (SiPDs) are widely used in NIR applications; however, their scalability is limited by their crystalline properties. Organic photodetectors (OPDs) have attracted attention for NIR applications owing to their scalability, low-temperature processing, and notably low dark current density (JD), which is similar to that of SiPDs. However, the still high JD (at NIR band) and few measurements of noise equivalent powers (NEPs) pose challenges for accurate performance comparisons. This study addresses these issues by quantitatively characterizing the performance matrix and JD generation mechanism using electron-blocking layers (EBLs) in OPDs. The energy offset at an EBL/photosensitive layer interface determines the thermal activation energy and directly affects JD. A newly synthesized EBL (3PAFBr) substantially enhances the interfacial energy barrier by forming a homogeneous contact owing to the improved anchoring ability of 3PAFBr. As a result, the OPD with 3PAFBr yields a noise current of 852 aA (JD = 12.3 fA cm⁻2 at V → -0.1 V) and several femtowatt-scale NEPs. As far as it is known, this is an ultralow of JD in NIR OPDs. This emphasizes the necessity for quantitative performance characterization.
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Affiliation(s)
- Tae Hyuk Kim
- School of Electrical Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Ji Hyeon Lee
- Department of Energy and Materials Engineering, Dongguk University, Seoul, 04620, Republic of Korea
| | - Min Ho Jang
- Department of Advanced Battery Convergence Engineering, Dongguk University, Seoul, 04620, Republic of Korea
| | - Gyeong Min Lee
- School of Electrical Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Eun Soo Shim
- Department of Energy and Materials Engineering, Dongguk University, Seoul, 04620, Republic of Korea
| | - Seunghyun Oh
- School of Electrical Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Muhammad Ahsan Saeed
- School of Electrical Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Min Jong Lee
- School of Electrical Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Byoung-Soo Yu
- Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea
- Division of Nanoscience and Technology, KIST School, University of Science and Technology (UST), Seoul, 02792, Republic of Korea
| | - Do Kyung Hwang
- Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea
- Division of Nanoscience and Technology, KIST School, University of Science and Technology (UST), Seoul, 02792, Republic of Korea
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, Republic of Korea
| | - Chae Won Park
- Department of Advanced Battery Convergence Engineering, Dongguk University, Seoul, 04620, Republic of Korea
| | - Sae Youn Lee
- Department of Energy and Materials Engineering, Dongguk University, Seoul, 04620, Republic of Korea
| | - Jea Woong Jo
- Department of Energy and Materials Engineering, Dongguk University, Seoul, 04620, Republic of Korea
| | - Jae Won Shim
- School of Electrical Engineering, Korea University, Seoul, 02841, Republic of Korea
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Chai Y, Jiang J, Wu L, Sun Z, Fang S, Shen L, Yao K. Surface Engineering of Perovskite Single Crystals by Atomic Layer Deposited Tin Oxide for Optical Communication. J Phys Chem Lett 2024; 15:3859-3865. [PMID: 38557200 DOI: 10.1021/acs.jpclett.4c00547] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/04/2024]
Abstract
Perovskite single crystals with excellent physical properties have broad prospects in the field of optoelectronics. However, the presence of dangling bonds, surface dislocations, and chemical impurities results in high surface defect density and sensitivity to humidity. Unfortunately, there are relatively few surface engineering strategies for single perovskite single crystals. We present a strategy utilizing atomic layer deposited SnOx to passivate surface defects in perovskite single crystals. The photodetector prepared based on the modified FAPbBr3 single crystals exhibits a low dark current of 1.89 × 10-9 A at a 5 V bias, close to 4 times lower with respect to the pristine device, a high detectivity of 2.3 × 1010 jones, and a fast response time of 27 μs. Moreover, the photodetectors feature long-term operational stability because the presence of a dense SnOx capping layer hinders the ingress of moisture and diffusion of ions. We further demonstrate the promise of our perovskite single crystal detectors for real-time subaqueous optical communication.
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Affiliation(s)
- Yalin Chai
- Institute of Photovoltaics, School of Physics and Materials Science, Nanchang University, Nanchang 330031, China
| | - Jizhong Jiang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, International Center of Future Science, Jilin University, Changchun 130012, China
| | - Long Wu
- Institute of Photovoltaics, School of Physics and Materials Science, Nanchang University, Nanchang 330031, China
| | - Zaicheng Sun
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, International Center of Future Science, Jilin University, Changchun 130012, China
| | - Shanshan Fang
- Institute of Photovoltaics, School of Physics and Materials Science, Nanchang University, Nanchang 330031, China
| | - Liang Shen
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, International Center of Future Science, Jilin University, Changchun 130012, China
| | - Kai Yao
- Institute of Photovoltaics, School of Physics and Materials Science, Nanchang University, Nanchang 330031, China
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Wang Y, Yang M, Yin B, Wu B, Liu G, Jeong S, Zhang Y, Yang C, He Z, Huang F, Cao Y, Duan C. An A-D-A'-D-A-Type Narrow Bandgap Electron Acceptor Based on Selenophene-Flanked Diketopyrrolopyrrole for Sensitive Near-Infrared Photodetection. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38350229 DOI: 10.1021/acsami.3c15365] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/15/2024]
Abstract
Near-infrared organic photodetectors possess great application potential in night vision, optical communication, and image sensing, but their development is limited by the lack of narrow bandgap organic semiconductors. A-D-A'-D-A-type molecules, featuring multiple intramolecular charge transfer effects, offer a robust framework for achieving near-infrared light absorption. Herein, we report a novel A-D-A'-D-A-type narrow bandgap electron acceptor named DPPSe-4Cl, which incorporates a selenophene-flanked diketopyrrolopyrrole (Se-DPP) unit as its central A' component. This molecule demonstrates exceptional near-infrared absorption properties with an absorption onset reaching 1120 nm and a low optical bandgap of 1.11 eV, owing to the strong electron-withdrawing ability and quinoidal resonance effect induced by the Se-DPP unit. By implementing a doping compensation strategy assisted by Y6 to reduce the trap density in the photoactive layer, the optimized organic photodetector based on DPPSe-4Cl exhibited efficient spectral response and remarkable sensitivity in the range of 300-1100 nm. Particularly, a specific detectivity surpassing 1012 Jones in the wavelength range of 410-1030 nm is achieved. This work offers a promising approach for developing highly sensitive visible to near-infrared broadband photodetection technology using organic semiconductors.
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Affiliation(s)
- Yeye Wang
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, Guangdong, China
| | - Mingqun Yang
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, Guangdong, China
| | - Bingyan Yin
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, Guangdong, China
| | - Baoqi Wu
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, Guangdong, China
| | - Guoqiang Liu
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, Guangdong, China
| | - Seonghun Jeong
- School of Energy and Chemical Engineering, Perovtronics Research Center, Low Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology (UNIST), 50 UNIST-gil, Ulju-gun, Ulsan 44919, South Korea
| | - Yue Zhang
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, Guangdong, China
| | - Changduk Yang
- School of Energy and Chemical Engineering, Perovtronics Research Center, Low Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology (UNIST), 50 UNIST-gil, Ulju-gun, Ulsan 44919, South Korea
| | - Zhicai He
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, Guangdong, China
| | - Fei Huang
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, Guangdong, China
| | - Yong Cao
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, Guangdong, China
| | - Chunhui Duan
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, Guangdong, China
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10
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Ruiz-Preciado LA, Pešek P, Guerra-Yánez C, Ghassemlooy Z, Zvánovec S, Hernandez-Sosa G. Inkjet-printed high-performance and mechanically flexible organic photodiodes for optical wireless communication. Sci Rep 2024; 14:3296. [PMID: 38332022 PMCID: PMC10853278 DOI: 10.1038/s41598-024-53796-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/15/2023] [Accepted: 02/05/2024] [Indexed: 02/10/2024] Open
Abstract
Emerging areas such as the Internet of Things (IoT), wearable and wireless sensor networks require the implementation of optoelectronic devices that are cost-efficient, high-performing and capable of conforming to different surfaces. Organic semiconductors and their deposition via digital printing techniques have opened up new possibilities for optical devices that are particularly suitable for these innovative fields of application. In this work, we present the fabrication and characterization of high-performance organic photodiodes (OPDs) and their use as an optical receiver in an indoor visible light communication (VLC) system. We investigate and compare different device architectures including spin-coated, partially-printed, and fully-printed OPDs. The presented devices exhibited state-of-the-art performance and reached faster detection speeds than any other OPD previously reported as organic receivers in VLC systems. Finally, our results demonstrate that the high-performance of the fabricated OPDs can be maintained in the VLC system even after the fabrication method is transferred to a fully-inkjet-printed process deposited on a mechanically flexible substrate. A comparison between rigid and flexible samples shows absolute differences of only 0.2 b s-1 Hz-1 and 2.9 Mb s-1 for the spectral efficiency and the data rate, respectively.
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Affiliation(s)
- Luis Arturo Ruiz-Preciado
- Light Technology Institute, Karlsruhe Institute of Technology, Engesserstr. 13, 76131, Karlsruhe, Germany
- InnovationLab, Speyererstr. 4, 69115, Heidelberg, Germany
| | - Petr Pešek
- Faculty of Electrical Engineering, Czech Technical University in Prague, Dejvice-Praha 6, 16627, Prague, Czech Republic
| | - Carlos Guerra-Yánez
- Faculty of Electrical Engineering, Czech Technical University in Prague, Dejvice-Praha 6, 16627, Prague, Czech Republic
| | - Zabih Ghassemlooy
- Optical Communications Research Group, Faculty of Engineering and Environment, Northumbria University, Newcastle, UK
| | - Stanislav Zvánovec
- Faculty of Electrical Engineering, Czech Technical University in Prague, Dejvice-Praha 6, 16627, Prague, Czech Republic.
| | - Gerardo Hernandez-Sosa
- Light Technology Institute, Karlsruhe Institute of Technology, Engesserstr. 13, 76131, Karlsruhe, Germany.
- InnovationLab, Speyererstr. 4, 69115, Heidelberg, Germany.
- Institute of Microstructure Technology, Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, 76344, Eggenstein-Leopoldshafen, Germany.
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11
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Lee S, Lee J, Sim HR, So C, Chung DS. Shortwave Infrared Organic Photodiodes Realized by Polaron Engineering. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2310250. [PMID: 38016048 DOI: 10.1002/adma.202310250] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/04/2023] [Revised: 11/27/2023] [Indexed: 11/30/2023]
Abstract
A novel approach for developing shortwave IR (SWIR) organic photodiodes (OPDs) using doped polymers is presented. SWIR OPDs are challenging to produce because of the limitations in extending the absorption of conjugated molecules and the high dark currents of SWIR-absorbing materials. Herein, it is shown that the conversion of bound polarons to free polarons by light energy can be utilized as an SWIR photodetection mechanism. To maximize the bound-polaron density and bound-to-free polaron ratio of the doped polymer film, the doping process is engineered and dopant molecules are diffused into the crystalline domain of the polymer matrix and a direct correlation between the bound-to-free polaron ratio and device performance is confirmed. The optimized double-doped SWIR OPD exhibits a high external quantum efficiency of 77 100% and specific detectivity of 1.11 × 1011 Jones against SWIR. These findings demonstrate the application potential of polarons as alternatives for Frenkel excitons in SWIR OPDs.
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Affiliation(s)
- Sangjun Lee
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Juhyeok Lee
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Hye Ryun Sim
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Chan So
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Dae Sung Chung
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
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12
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Kim TH, Choi YK, Lee GM, Saeed MA, Jung BK, Lee MJ, Choi HJ, Oh SJ, Shim JW. Ultra-Low Noise Level Infrared Quantum Dot Photodiodes with Self-Screenable Polymeric Optical Window. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2309028. [PMID: 37991324 DOI: 10.1002/adma.202309028] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/03/2023] [Revised: 11/20/2023] [Indexed: 11/23/2023]
Abstract
Quantum dot photodiodes (QPDs) have garnered significant attention because of their unparalleled near-infrared (NIR) detection capabilities, primarily attributable to their size-dependent bandgap tunability. Nevertheless, the broadband absorption spectrum of QPD engenders substantial noise floor within superfluous visible light regions, notably hindering their use in several emerging applications necessitating the detection of faint micro-light signals. To overcome these hurdles, a self-screenable NIR QPD featuring an internal optical filter with a thick polymeric interlayer to reduce electronic noise is demonstrated. This effectively screens out undesirable visible light regions while reducing the ionized defect owing to decreased density of state, yielding an extremely low dark current (≈1010 A cm-2 at V = -1 V). Consequently, the electronic noise spectral density is attained at levels below ≈10-27 -10-28 A2 Hz-1 , and responsivity (R) dropped to 92% within the visible light spectrum.
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Affiliation(s)
- Tae Hyuk Kim
- School of Electrical Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Young Kyun Choi
- Department of Materials Science and Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Gyeong Min Lee
- School of Electrical Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Muhammad Ahsan Saeed
- School of Electrical Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Byung Ku Jung
- Department of Materials Science and Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Min Jong Lee
- School of Electrical Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Hyung Jin Choi
- Department of Materials Science and Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Soong Ju Oh
- Department of Materials Science and Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Jae Won Shim
- School of Electrical Engineering, Korea University, Seoul, 02841, Republic of Korea
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13
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Kim D, Park HJ, Jung SH, Pyo WJ, Hassan SZ, Sim HR, Lee JH, Jee DW, Chung DS. Visible-Light Communication with Lighting: RGB Wavelength Division Multiplexing OLEDs/OPDs Platform. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2309416. [PMID: 37856894 DOI: 10.1002/adma.202309416] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/12/2023] [Revised: 10/11/2023] [Indexed: 10/21/2023]
Abstract
A multichannel/multicolor visible light communication (VLC) system using entirely organic components, including organic light emitting diodes (OLEDs) and organic photodiodes (OPDs), is developed to demonstrate indoor lighting applications where the integration of OLEDs and OPDs has significant potential. To achieve this, tricolor (Red/Green/Blue(R/G/B))-selective OPD arrays for the receiver and tricolor OLED arrays for the emitter are developed. For (R/G/B)-selective OPDs, a Fabry-Pérot electrode to enhance color selectivity and a thick junction structure to effectively accommodate a wide range of driving voltages are introduced. For tricolor OLEDs, fluorescent-emitting materials are used to enhance the operating frequency in addition to introducing a cavity structure to achieve narrow emission. Utilizing these spectrally refined tricolor OPDs/OLEDs, a VLC system is designed for indoor lighting applications, and a systematic analysis of their signal-to-interference ratio dependence on the distance or angle between the transmitter and receiver is performed. The study's findings indicate the importance of emission angle-dependent wavelength shift of the OLED and the luminosity function, which varies with wavelength, in the R/G/B mixed-white-light-based VLC systems. Finally, the feasibility of VLC using tricolor OPDs/OLEDs in the real-life context of indoor white-color lighting is demonstrated, showing that the transmitted data patterns well-matched the received data patterns.
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Affiliation(s)
- Dowan Kim
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Hyung-Jun Park
- Department of Intelligence Semiconductor Engineering, Ajou University, Suwon, 16499, Republic of Korea
| | - Seo-Hee Jung
- Department of Materials Science and Engineering, Inha University, Incheon, 22212, Republic of Korea
| | - Won Jun Pyo
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Syed Zahid Hassan
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Hye Ryun Sim
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Jeong-Hwan Lee
- Department of Materials Science and Engineering, Inha University, Incheon, 22212, Republic of Korea
- 3D Convergence Center, Inha University, Incheon, 22212, Republic of Korea
| | - Dong-Woo Jee
- Department of Intelligence Semiconductor Engineering, Ajou University, Suwon, 16499, Republic of Korea
- Department of Electrical and Computer Engineering, Ajou University, Suwon, 16499, Republic of Korea
| | - Dae Sung Chung
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
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14
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Lou Z, Tao J, Wei B, Jiang X, Cheng S, Wang Z, Qin C, Liang R, Guo H, Zhu L, Müller‐Buschbaum P, Cheng H, Xu X. Near-Infrared Organic Photodetectors toward Skin-Integrated Photoplethysmography-Electrocardiography Multimodal Sensing System. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2304174. [PMID: 37991135 PMCID: PMC10754100 DOI: 10.1002/advs.202304174] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/23/2023] [Revised: 10/05/2023] [Indexed: 11/23/2023]
Abstract
In the fast-evolving landscape of decentralized and personalized healthcare, the need for multimodal biosensing systems that integrate seamlessly with the human body is growing rapidly. This presents a significant challenge in devising ultraflexible configurations that can accommodate multiple sensors and designing high-performance sensing components that remain stable over long periods. To overcome these challenges, ultraflexible organic photodetectors (OPDs) that exhibit exceptional performance under near-infrared illumination while maintaining long-term stability are developed. These ultraflexible OPDs demonstrate a photoresponsivity of 0.53 A W-1 under 940 nm, shot-noise-limited specific detectivity of 3.4 × 1013 Jones, and cut-off response frequency beyond 1 MHz at -3 dB. As a result, the flexible photoplethysmography sensor boasts a high signal-to-noise ratio and stable peak-to-peak amplitude under hypoxic and hypoperfusion conditions, outperforming commercial finger pulse oximeters. This ensures precise extraction of blood oxygen saturation in dynamic working conditions. Ultraflexible OPDs are further integrated with conductive polymer electrodes on an ultrathin hydrogel substrate, allowing for direct interface with soft and dynamic skin. This skin-integrated sensing platform provides accurate measurement of photoelectric and biopotential signals in a time-synchronized manner, reproducing the functionality of conventional technologies without their inherent limitations.
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Affiliation(s)
- Zirui Lou
- Shenzhen International Graduate School & Tsinghua‐Berkeley Shenzhen InstituteTsinghua UniversityShenzhen518055China
- School of Advanced MaterialsPeking University Shenzhen Graduate SchoolShenzhen518055China
| | - Jun Tao
- Shenzhen International Graduate School & Tsinghua‐Berkeley Shenzhen InstituteTsinghua UniversityShenzhen518055China
| | - Binbin Wei
- Shenzhen International Graduate School & Tsinghua‐Berkeley Shenzhen InstituteTsinghua UniversityShenzhen518055China
| | - Xinyu Jiang
- Lehrstuhl für Funktionelle MaterialienPhysik DepartmentTechnische Universität MünchenJames‐Franck‐Str. 185748GarchingGermany
| | - Simin Cheng
- Shenzhen International Graduate School & Tsinghua‐Berkeley Shenzhen InstituteTsinghua UniversityShenzhen518055China
| | - Zehao Wang
- Shenzhen International Graduate School & Tsinghua‐Berkeley Shenzhen InstituteTsinghua UniversityShenzhen518055China
| | - Chao Qin
- State Key Laboratory of Silicon and Advanced Semiconductor MaterialsSchool of Materials Science and EngineeringZhejiang UniversityHangzhou310027China
| | - Rong Liang
- State Key Laboratory of Silicon and Advanced Semiconductor MaterialsSchool of Materials Science and EngineeringZhejiang UniversityHangzhou310027China
| | - Haotian Guo
- Shenzhen International Graduate School & Tsinghua‐Berkeley Shenzhen InstituteTsinghua UniversityShenzhen518055China
| | - Liping Zhu
- State Key Laboratory of Silicon and Advanced Semiconductor MaterialsSchool of Materials Science and EngineeringZhejiang UniversityHangzhou310027China
| | - Peter Müller‐Buschbaum
- Lehrstuhl für Funktionelle MaterialienPhysik DepartmentTechnische Universität MünchenJames‐Franck‐Str. 185748GarchingGermany
- Heinz Maier‐Leibnitz‐Zentrum (MLZ)Technische Universität MünchenLichtenbergstr. 185748GarchingGermany
| | - Hui‐Ming Cheng
- Institute of Technology for Carbon Neutrality & Faculty of Materials Science and Energy EngineeringShenzhen Institute of Advanced TechnologyChinese Academy of SciencesShenzhen518055China
- Shenyang National Laboratory for Materials ScienceInstitute of Metal ResearchChinese Academy of SciencesShenyang110016China
| | - Xiaomin Xu
- Shenzhen International Graduate School & Tsinghua‐Berkeley Shenzhen InstituteTsinghua UniversityShenzhen518055China
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15
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He Z, Zhang HY, Du X, Yu X, Han J, Cao L, Lin H, Wang J, Zheng C, Tao S. A high-performance dual-functional organic upconversion device with detectivity approaching 10 13 Jones and photon-to-photon efficiency over 20. MATERIALS HORIZONS 2023; 10:5950-5961. [PMID: 37882244 DOI: 10.1039/d3mh01337e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/27/2023]
Abstract
Organic upconversion devices (UCDs) are a cutting-edge technology and hot topic because of their advantages of low cost and convenience in the important applications of near-infrared (NIR) detection and imaging. However, to realize utilization of triplet excitons (T1), previous UCDs have the drawback of heavily relying on toxic and costly heavy-metal-doped emitters. More importantly, due to poor performance of the detecting unit and/or emitting unit, improving their detectivity (D*) and photon-to-photon conversion efficiency (ηp-p) is still a challenge for real applications. Here, we report a high-performance dual-functional purely organic UCD that has an outstanding D* approaching 1013 Jones and a high ηp-p of 20.1% in the NIR region, which are some of the highest values among those reported for UCDs. The high performance is credited to the excellent D* of the detecting unit, exceeding 1014 Jones, and is also attributed to efficient T1 utilization via a dual reverse intersystem crossing channel and high optical out coupling achieved via a high horizontal dipole ratio in the emitting unit. The high D* and ηp-p enable the UCD to detect 850 nm light at as little as 0.29 μW cm-2 and with a high display contrast of over 70 000 : 1, significantly improving the potential of practical applications of UCDs in NIR detection and imaging. Furthermore, a fast rise time and fall time of 8.9 and 14.8 μs are also achieved. Benefiting from the high performance, consequent applications of low-power pulse-state monitoring and fine-structure bio-imaging are successfully realized with high quality results by using our organic UCDs. These results demonstrate that our design not only eliminates dependence of UCDs on heavy-metal emitters, but also takes their performance and applications to a high level.
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Affiliation(s)
- Zeyu He
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, No. 2006, Xiyuan Ave, West Hi-Tech Zone, Chengdu 610054, P. R. China.
| | - Heng-Yuan Zhang
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, No. 2006, Xiyuan Ave, West Hi-Tech Zone, Chengdu 610054, P. R. China.
| | - Xiaoyang Du
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, No. 2006, Xiyuan Ave, West Hi-Tech Zone, Chengdu 610054, P. R. China.
| | - Xin Yu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, No. 2006, Xiyuan Ave, West Hi-Tech Zone, Chengdu 610054, P. R. China.
| | - Jiayue Han
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, No. 2006, Xiyuan Ave, West Hi-Tech Zone, Chengdu 610054, P. R. China.
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Luye Cao
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, No. 2006, Xiyuan Ave, West Hi-Tech Zone, Chengdu 610054, P. R. China.
| | - Hui Lin
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, No. 2006, Xiyuan Ave, West Hi-Tech Zone, Chengdu 610054, P. R. China.
| | - Jun Wang
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, No. 2006, Xiyuan Ave, West Hi-Tech Zone, Chengdu 610054, P. R. China.
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Caijun Zheng
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, No. 2006, Xiyuan Ave, West Hi-Tech Zone, Chengdu 610054, P. R. China.
| | - Silu Tao
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, No. 2006, Xiyuan Ave, West Hi-Tech Zone, Chengdu 610054, P. R. China.
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16
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Xue L, Wang X, Pan YZ, Luo M, Xu Y, Li YW, Zhao JD, Zhao Z, Li Q, Bae BS, Fayemi OE, Zhou J, Zhu Y, Lei W, Zhang X. Fast Response, High Spectral Rejection Ratio, Self-Filtered Ultranarrowband Photodetectors Based on Perovskite Single-Crystal Heterojunctions. ACS APPLIED MATERIALS & INTERFACES 2023; 15:54050-54059. [PMID: 37956100 DOI: 10.1021/acsami.3c10559] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/15/2023]
Abstract
Narrowband photodetectors have wide application potential in high-resolution imaging and encrypted communication, due to their high-precision spectral resolution capability. In this work, we report a fast response, high spectral rejection ratio, and self-filtered ultranarrowband photodetector with a new mechanism, which introduces bulk recombination by doping Bi3+ and cooperates with surface recombination for further quenching photogenerated charges generated by short-wavelength-light excitation in perovskite single-crystal. A perovskite film focused on collecting charges is fabricated on the single crystal by a lattice-matched solution-processed epitaxial growth method. Due to the formation of PN heterojunctions, a narrowband photodetector in this mechanism has remarkable spectral selectivity and detection performance with an ultranarrow full width at half-maximum (FWHM) of 7.7 nm and a high spectral rejection ratio of 790, as well as a high specific detectivity up to 1.5 × 1010 Jones, a fast response speed with a rise time and fall time of ∼8 and 137 μs. The ultrafast and ultranarrow spectra response of self-filtered narrowband photodetector provides a new strategy in high-precision and high-resolution photoelectric detection.
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Affiliation(s)
- Lu Xue
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
| | - Xin Wang
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
| | - Yu-Zhu Pan
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
| | - Manman Luo
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
| | - YuBing Xu
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
| | - Yu-Wei Li
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
| | - Jing-Da Zhao
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
| | - Zhiwei Zhao
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
| | - Qing Li
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
| | - Byung-Seong Bae
- Department of Electronics & Display Engineering Hoseo University, Hoseo Ro 79, Asan City, Chungnam 31499, Republic of Korea
| | - Omolola Esther Fayemi
- Department of Chemistry, School of Mathematics and Physical Sciences Faculty of Natural and Agricultural Sciences North-West University, Mafikeng Campus, Private Bag X2046, Mmabatho 2735, South Africa
| | | | - Ying Zhu
- E-spectrum Optoelectronic Co., Ltd., Suzhou 215111, China
| | - Wei Lei
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
| | - Xiaobing Zhang
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
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17
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Chen T, Liu Z, Zhang L, Wu H, Wu G, Chen H. Visible-Blind Narrowband Near-Infrared Photodetector for Precise Real-Time Photoplethysmography Measurement. ACS APPLIED MATERIALS & INTERFACES 2023; 15:50312-50320. [PMID: 37852300 DOI: 10.1021/acsami.3c10338] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/20/2023]
Abstract
The visible-blind narrowband photodetector (NPD) with spectral selective sensitivity to near-infrared (NIR) light is an important technology in the field of cardiovascular health assessment. However, the biological information carried by NIR light constantly changes signals with small amplitude and fast speed, which puts high requirements on the performance of detectors. Herein, visible-blind NIR NPDs were constructed by integrating solution-processable films of perovskite, CuSCN, and organic semiconductors. The NIR response was provided by the organic bulk heterojunction (OBHJ) film with a narrow band gap. A thick perovskite layer was applied to screen the incident visible light and suppress the leakage current in the dark state. CuSCN with a high LUMO level blocked the extraction of the visible-light-induced free electrons. The width of the response window was restricted by adjusting the band gap of the perovskite and the donor/acceptor ratio of the OBHJ film. The optimized NIR NPD exhibits a comprehensive performance including visible-blind response, a tunable response spectrum, a high responsivity/detectivity, and a short response time. In practical photoplethysmography measurements, the detector can record the human heart rate in real time through a noninvasive technique and precisely monitor the whole cardiac cycle, which provides an effective method for early detection of cardiovascular symptoms for timely diagnosis and treatment.
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Affiliation(s)
- Tingjun Chen
- MOE Key Laboratory of Macromolecular Synthesis and Functionalization, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Department of Polymer Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
| | - Zhixin Liu
- MOE Key Laboratory of Macromolecular Synthesis and Functionalization, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Department of Polymer Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
| | - Lin Zhang
- MOE Key Laboratory of Macromolecular Synthesis and Functionalization, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Department of Polymer Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
| | - Haotian Wu
- MOE Key Laboratory of Macromolecular Synthesis and Functionalization, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Department of Polymer Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
| | - Gang Wu
- MOE Key Laboratory of Macromolecular Synthesis and Functionalization, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Department of Polymer Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
| | - Hongzheng Chen
- MOE Key Laboratory of Macromolecular Synthesis and Functionalization, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Department of Polymer Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
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18
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Xu Z, Sun C, Min S, Ye Z, Zhao C, Li J, Liu Z, Liu Y, Li WD, Tang MC, Song Q, Fu HY, Kang F, Li J, Shen Y, Yu C, Wei G. Si/Organic Integrated Narrowband Near-Infrared Photodetector. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2302072. [PMID: 37431202 DOI: 10.1002/smll.202302072] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/10/2023] [Revised: 06/26/2023] [Indexed: 07/12/2023]
Abstract
Spectrally selective narrowband photodetection is critical for near-infrared (NIR) imaging applications, such as for communicationand night-vision utilities. It is a long-standing challenge for detectors based on silicon, to achieve narrowband photodetection without integrating any optical filters. Here, this work demonstrates a NIR nanograting Si/organic (PBDBT-DTBT:BTP-4F) heterojunction photodetector (PD), which for the first time obtains the full-width-at-half-maximum (FWHM) of only 26 nm and fast response of 74 µs at 895 nm. The response peak can be successfully tailored from 895 to 977 nm. The sharp and narrow response NIR peak is inherently attributed to the coherent overlapping between the NIR transmission spectrum of organic layer and diffraction enhanced absorption peak of patterned nanograting Si substrates. The finite difference time domain (FDTD) physics calculation confirms the resonant enhancement peaks, which is well consistent with the experiment results. Meanwhile, the relative characterization indicates that the introduction of the organic film can promote carrier transfer and charge collection, facilitating efficient photocurrent generation. This new device design strategy opens up a new window in developing low-cost sensitive NIR narrowband detection.
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Affiliation(s)
- Zhuhua Xu
- Tsinghua-Berkeley Shenzhen Institute (TBSI), Tsinghua University, Shenzhen, 518055, China
- Tsinghua Shenzhen International Graduate School (SIGS), Tsinghua University, Shenzhen, 518055, China
| | - Chuying Sun
- Department of Mechanical Engineering, University of Hong Kong, Hong Kong, 999077, China
| | - Siyi Min
- Department of Mechanical Engineering, University of Hong Kong, Hong Kong, 999077, China
| | - Zilong Ye
- Tsinghua Shenzhen International Graduate School (SIGS), Tsinghua University, Shenzhen, 518055, China
| | - Cong Zhao
- Tsinghua-Berkeley Shenzhen Institute (TBSI), Tsinghua University, Shenzhen, 518055, China
- Tsinghua Shenzhen International Graduate School (SIGS), Tsinghua University, Shenzhen, 518055, China
| | - Jingzhou Li
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
| | - Zhenghao Liu
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Youdi Liu
- Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, PA, 16802, USA
| | - Wen-Di Li
- Department of Mechanical Engineering, University of Hong Kong, Hong Kong, 999077, China
| | - Man-Chung Tang
- Tsinghua Shenzhen International Graduate School (SIGS), Tsinghua University, Shenzhen, 518055, China
| | - Qinghua Song
- Tsinghua Shenzhen International Graduate School (SIGS), Tsinghua University, Shenzhen, 518055, China
| | - H Y Fu
- Tsinghua-Berkeley Shenzhen Institute (TBSI), Tsinghua University, Shenzhen, 518055, China
| | - Feiyu Kang
- Tsinghua-Berkeley Shenzhen Institute (TBSI), Tsinghua University, Shenzhen, 518055, China
- Tsinghua Shenzhen International Graduate School (SIGS), Tsinghua University, Shenzhen, 518055, China
| | - Jiangyu Li
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Yang Shen
- State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Cunjiang Yu
- Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, PA, 16802, USA
- Department of Biomedical Engineering, Department of Materials Science and Engineering, Materials Research Institute, Pennsylvania State University, University Park, PA, 16802, USA
| | - Guodan Wei
- Tsinghua-Berkeley Shenzhen Institute (TBSI), Tsinghua University, Shenzhen, 518055, China
- Tsinghua Shenzhen International Graduate School (SIGS), Tsinghua University, Shenzhen, 518055, China
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19
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Zhao Y, Chen N, Deng B, Wu L, Wang S, Grandidier B, Proust J, Plain J, Xu T. Plasmonic-Enhanced Tunable Near-Infrared Photoresponse for Narrowband Organic Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2023; 15:49436-49446. [PMID: 37821424 DOI: 10.1021/acsami.3c11753] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/13/2023]
Abstract
Near-infrared (NIR) narrowband organic photodetectors (OPDs) can be essential building blocks for emerging applications including wireless optical communication and light detection, but further improvement of their performances remains to be a great challenge. Herein, a light manipulation strategy combining solution-processable gold nanorings (AuNRs)-based hole transporting layer (HTL) and an optical microcavity is proposed to achieve high-performance NIR narrowband OPDs. Optical microcavities with a Fabry-Pérot resonator structure, guided by theoretical simulation, are coupled with PM6:BTP-eC9-based OPDs to exhibit highly tunable NIR selectivity. The further integration of AuNRs array with NIR-customized localized surface plasmon resonance in the HTL of the NIR narrowband OPDs enables evident NIR absorption enhancement, yielding a specific detectivity exceeding 1013 Jones (1.5 × 1012 Jones, calculated from noise spectral density) at 820 nm, along with a finely selective photoresponse (full width at half-maximum of 80 nm) and a 3-fold increase in photocurrent intensity. Finally, the practical application of our OPDs is demonstrated in an NIR communication system. These results reveal the great potential of an appropriate optical design for developing highly performing NIR narrowband OPDs.
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Affiliation(s)
- Yanglin Zhao
- Sino-European School of Technology, Shanghai University, 200444 Shanghai, China
| | - Nan Chen
- Sino-European School of Technology, Shanghai University, 200444 Shanghai, China
| | - Baozhong Deng
- Sino-European School of Technology, Shanghai University, 200444 Shanghai, China
| | - Lifang Wu
- Materials Genome Institute, Shanghai University, 200444 Shanghai, China
| | - Shenghao Wang
- Materials Genome Institute, Shanghai University, 200444 Shanghai, China
| | - Bruno Grandidier
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520─IEMN, 59000 Lille, France
| | - Julien Proust
- Light, Nanomaterials, Nanotechnologies (L2n), CNRS ERL 7004, University of Technology of Troyes, F-10004 Troyes, France
| | - Jérôme Plain
- Light, Nanomaterials, Nanotechnologies (L2n), CNRS ERL 7004, University of Technology of Troyes, F-10004 Troyes, France
| | - Tao Xu
- Sino-European School of Technology, Shanghai University, 200444 Shanghai, China
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20
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Schardt J, Gerken M. Electrical characterization of optical resonance effects in laterally-nanostructured organic photodetectors. OPTICS EXPRESS 2023; 31:36136-36149. [PMID: 38017769 DOI: 10.1364/oe.499349] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/13/2023] [Accepted: 09/15/2023] [Indexed: 11/30/2023]
Abstract
Optoelectronic devices based on organic semiconductor materials are on the rise for sensing applications due to their integrability with a variety of substrates - including flexible substrates for wearables. For sensing applications often narrowband absorption is desired with suppression of light at other wavelengths. Here, we investigate narrowband absorption enhancement of organic photodetectors (OPD) with an integrated lateral nanostructure. We show with finite-element simulations, that resonant excitation of low absorbing wavelength regimes allow for up to 3 times the absolute absorption at wavelengths on resonance compared to wavelengths off resonance. We present experimental results for CuPc/C60 OPDs fabricated on grating nanostructures with periods of 350 nm and 400 nm and a grating depth of 140 nm as well as a grating period of 370 nm and grating depths of 30 nm. Angle-resolved transmission spectra clearly show the optical resonance effects. In order to evaluate the electrical resonance effects a measurement system is introduced based on angular laser excitation. An angular resolution of 0.1° is achieved in the analysis of the OPD photocurrent response. Using the measurement setup an increase of the photocurrent by up to 50% is observed for the TE-resonance. It is demonstrated that the resonance wavelength is tuned simply by adjusting the grating period without changes in the layer thicknesses. This opens up new opportunities in realizing pixels of different wavelength response next to each other employing a single active stack design.
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21
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Chen F, Li Y, Chen Y, Wang YX, Hu W. Supramolecular interface decoration on a polymer conductor for an intrinsically stretchable near-infrared photodiode. Chem Commun (Camb) 2023; 59:11975-11978. [PMID: 37724429 DOI: 10.1039/d3cc04189a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/20/2023]
Abstract
Stretchable photodiodes with near-infrared (NIR) response face the challenge of material deficiency. A supramolecular cathode with excellent optical, tensile and electrical properties was proposed. Together with a stretchable organic heterojunction, we developed an intrinsically stretchable NIR photodiode with high detectivity over 1011 Jones and that remained functional under 100% strain.
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Affiliation(s)
- Fan Chen
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering, Tianjin 300072, P. R. China.
| | - Yiming Li
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering, Tianjin 300072, P. R. China.
| | - Yan Chen
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering, Tianjin 300072, P. R. China.
| | - Yi-Xuan Wang
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering, Tianjin 300072, P. R. China.
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin 300192, P. R. China
| | - Wenping Hu
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering, Tianjin 300072, P. R. China.
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin 300192, P. R. China
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22
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Asl AB, Ahmadi H, Rostami A. A novel plasmonic metal-semiconductor-insulator-metal (MSIM) color sensor compatible with CMOS technology. Sci Rep 2023; 13:14029. [PMID: 37640928 PMCID: PMC10462665 DOI: 10.1038/s41598-023-41346-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/29/2023] [Accepted: 08/24/2023] [Indexed: 08/31/2023] Open
Abstract
Color detection is one of the top interests in both biological and industrial applications. Specifically, the Determination of the light wave characteristics is vital in photonic technology. One of the features in the color sense that should be found out is its wavelength or color. In this work, we propose a structure that can be used to detect RGB colors separately in an efficient way. The proposed detector consists of the plasmonic filter sensing desired wavelength (red, green, and blue) and the PN diode to convert the received photons to the electrical current. At the input intensity of 1 mW × cm-2, the current density for blue, green, and red colors are 27, 35, and 48 µA × cm-2, respectively. It is shown that the intensities needed to obtain the current densities of 0.1 µA × cm-2 are 3.94, 2.98, and 2.25 µW × cm-2 for the blue, green, and red spectra respectively. It should mention that by using high-precision photodetector structures such as PIN diode, the minimum detectable level can be decreased. Simple adjusting for desired wavelength and linear operation for different input intensities are the characteristics of the designed structure. This detector is compatible with CMOS technology and can be easily utilized in numerous applications, such as charge-coupled devices, displays, and cameras.
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Affiliation(s)
- A Beheshti Asl
- Photonics and Nanocrystals Research Lab (PNRL), Faculty of Electrical and Computer Engineering, University of Tabriz, Tabriz, Iran
| | - H Ahmadi
- Photonics and Nanocrystals Research Lab (PNRL), Faculty of Electrical and Computer Engineering, University of Tabriz, Tabriz, Iran
- SP-EPT Lab., ASEPE Company, Industrial Park of Advanced Technologies, Tabriz, Iran
| | - A Rostami
- Photonics and Nanocrystals Research Lab (PNRL), Faculty of Electrical and Computer Engineering, University of Tabriz, Tabriz, Iran.
- SP-EPT Lab., ASEPE Company, Industrial Park of Advanced Technologies, Tabriz, Iran.
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23
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Hou Y, Li J, Yoon J, Knoepfel AM, Yang D, Zheng L, Ye T, Ghosh S, Priya S, Wang K. Retina-inspired narrowband perovskite sensor array for panchromatic imaging. SCIENCE ADVANCES 2023; 9:eade2338. [PMID: 37058567 PMCID: PMC10104461 DOI: 10.1126/sciadv.ade2338] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/02/2022] [Accepted: 03/13/2023] [Indexed: 06/19/2023]
Abstract
The retina is the essential part of the human visual system that receives light, converts it to neural signal, and transmits to brain for visual recognition. The red, green, and blue (R/G/B) cone retina cells are natural narrowband photodetectors (PDs) sensitive to R/G/B lights. Connecting with these cone cells, a multilayer neuro-network in the retina provides neuromorphic preprocessing before transmitting to brain. Inspired by this sophistication, we develop the narrowband (NB) imaging sensor combining R/G/B perovskite NB sensor array (mimicking the R/G/B photoreceptors) with a neuromorphic algorithm (mimicking the intermediate neural network) for high-fidelity panchromatic imaging. Compared to commercial sensors, we use perovskite "intrinsic" NB PD to exempt the complex optical filter array. In addition, we use an asymmetric device configuration to collect photocurrent without external bias, enabling a power-free photodetection feature. These results display a promising design for efficient and intelligent panchromatic imaging.
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Affiliation(s)
- Yuchen Hou
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802, USA
| | - Junde Li
- School of Electrical Engineering and Computer Science, Pennsylvania State University, University Park, PA 16802 USA
| | - Jungjin Yoon
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802, USA
| | - Abbey Marie Knoepfel
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802, USA
| | - Dong Yang
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802, USA
- Materials Research Institute, Pennsylvania State University, University Park, PA 16802, USA
| | - Luyao Zheng
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802, USA
| | - Tao Ye
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802, USA
| | - Swaroop Ghosh
- School of Electrical Engineering and Computer Science, Pennsylvania State University, University Park, PA 16802 USA
| | - Shashank Priya
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802, USA
- Materials Research Institute, Pennsylvania State University, University Park, PA 16802, USA
| | - Kai Wang
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802, USA
- Materials Research Institute, Pennsylvania State University, University Park, PA 16802, USA
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24
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Long Z, Qiu X, Chan CLJ, Sun Z, Yuan Z, Poddar S, Zhang Y, Ding Y, Gu L, Zhou Y, Tang W, Srivastava AK, Yu C, Zou X, Shen G, Fan Z. A neuromorphic bionic eye with filter-free color vision using hemispherical perovskite nanowire array retina. Nat Commun 2023; 14:1972. [PMID: 37031227 PMCID: PMC10082761 DOI: 10.1038/s41467-023-37581-y] [Citation(s) in RCA: 18] [Impact Index Per Article: 18.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/30/2022] [Accepted: 03/21/2023] [Indexed: 04/10/2023] Open
Abstract
Spherical geometry, adaptive optics, and highly dense network of neurons bridging the eye with the visual cortex, are the primary features of human eyes which enable wide field-of-view (FoV), low aberration, excellent adaptivity, and preprocessing of perceived visual information. Therefore, fabricating spherical artificial eyes has garnered enormous scientific interest. However, fusing color vision, in-device preprocessing and optical adaptivity into spherical artificial eyes has always been a tremendous challenge. Herein, we demonstrate a bionic eye comprising tunable liquid crystal optics, and a hemispherical neuromorphic retina with filter-free color vision, enabled by wavelength dependent bidirectional synaptic photo-response in a metal-oxide nanotube/perovskite nanowire hybrid structure. Moreover, by tuning the color selectivity with bias, the device can reconstruct full color images. This work demonstrates a unique approach to address the color vision and optical adaptivity issues associated with artificial eyes that can bring them to a new level approaching their biological counterparts.
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Affiliation(s)
- Zhenghao Long
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Xiao Qiu
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Chak Lam Jonathan Chan
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Zhibo Sun
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Zhengnan Yuan
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Swapnadeep Poddar
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Yuting Zhang
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Yucheng Ding
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Leilei Gu
- Qingyuan Research Institute, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, No. 800 Dongchuan Road, 200240, Shanghai, China
| | - Yu Zhou
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Wenying Tang
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Abhishek Kumar Srivastava
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Cunjiang Yu
- Department of Engineering Science and Mechanics, Department of Biomedical Engineering, Department of Materials Science and Engineering, Materials Research Institute, Pennsylvania State University, University Park, PA, 16802, USA
| | - Xuming Zou
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Guozhen Shen
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing, 100081, China
| | - Zhiyong Fan
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China.
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China.
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China.
- Department of Chemical and Biological Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China.
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25
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Lin Z, Yang Z, Wang J, Yang S. De Novo Studies of Working Mechanisms for Self-Driven Narrowband Perovskite Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 36893374 DOI: 10.1021/acsami.2c22904] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Self-driven narrowband perovskite photodetectors have recently attracted significant attention due to their simple preparation, high performance, and amenability for system integration. However, the origin of narrowband photoresponse and the related regulation mechanisms still remains elusive. To address these issues, we herein perform a systematic investigation by formulating an analytic model in conjunction with finite element simulation. The optical and electrical simulations have resulted in design principles for perovskite narrowband photodetectors in terms of the dependence of external quantum efficiency (EQE) on perovskite layer thickness, doping concentration, and band gap as well as trap state concentration. Careful investigations on the profiles of electric field, current, and optical absorption reveal the dependence of narrowband EQE on the direction of incident light and perovskite doping types: only p-type perovskite can yield the narrowband photoresponse for illumination from the hole transport layer (HTL) side. The simulation results demonstrated in this study shed new light on the mechanism of perovskite-based narrowband photodetectors and provide valuable guidance for their design.
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Affiliation(s)
- Zedong Lin
- Guangdong Provincial Key Lab of Nano-Micro Materials Research, School of Chemical Biology and Biotechnology, Shenzhen Graduate School, Peking University, Shenzhen 518055, P. R. China
- Institute of Biomedical Engineering, Shenzhen Bay Laboratory, Shenzhen 518107, P. R. China
| | - Zhenhai Yang
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences (CAS), Ningbo 315201, P. R. China
| | - Jian Wang
- Guangdong Provincial Key Lab of Nano-Micro Materials Research, School of Chemical Biology and Biotechnology, Shenzhen Graduate School, Peking University, Shenzhen 518055, P. R. China
- Institute of Biomedical Engineering, Shenzhen Bay Laboratory, Shenzhen 518107, P. R. China
| | - Shihe Yang
- Guangdong Provincial Key Lab of Nano-Micro Materials Research, School of Chemical Biology and Biotechnology, Shenzhen Graduate School, Peking University, Shenzhen 518055, P. R. China
- Institute of Biomedical Engineering, Shenzhen Bay Laboratory, Shenzhen 518107, P. R. China
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26
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Thachoth Chandran H, Tang H, Liu T, Mahadevan S, Liu K, Lu Z, Huang J, Ren Z, Liao F, Chai Y, Fong PW, Tsang SW, Lu S, Li G. Architecturally simple organic photodiodes with highly competitive figures of merit via a facile self-assembly strategy. MATERIALS HORIZONS 2023; 10:918-927. [PMID: 36546551 DOI: 10.1039/d2mh01164f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Photodetectors (PDs) based on organic materials exhibit potential advantages such as low-temperature processing, and superior mechanical properties and form factors. They have seen rapid strides toward achieving performance metrics comparable to inorganic counterparts. Here, a simplified device architecture is employed to realize stable and high-performance organic PDs (OPDs) while further easing the device fabrication process. In contrast to the sequential deposition of the hole blocking layer (HBL) and active layer (conventional 'two-step' processing), the proposed strategy forms a self-assembled HBL and active layer in a 'single-step' process. A high-performance UV-Vis-NIR OPD based on the PM6:BTP-eC9 system is demonstrated using this cost-effective processing strategy. The green solvent processed proof-of-concept device exhibits remarkable responsivity of ∼0.5 A W-1, lower noise current than conventional two-step OPD, ultrafast rise/fall times of 1.4/1.6 μs (comparable to commercial silicon diode), and a broad linear dynamic range of 140 dB. Importantly, highly stable (light and heat) devices compared to those processed by the conventional method are realized. The broad application potential of this elegant strategy is proven by demonstrating the concept in three representative systems with broadband sensing competence.
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Affiliation(s)
- Hrisheekesh Thachoth Chandran
- Department of Electronic and Information Engineering, Research Institute for Smart Energy (RISE), The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, P. R. China.
| | - Hua Tang
- Department of Electronic and Information Engineering, Research Institute for Smart Energy (RISE), The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, P. R. China.
- Thin-film Solar Technology Research Center, Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing, 400714, P. R. China
| | - Taili Liu
- College of Physics and Electronic Information, Yunnan Normal University, Yunnan Kunming 650500, China
- Yunnan Provincial Key Laboratory for Photoelectric Information Technology, Yunnan Normal University, Yunnan Kunming 650500, China
| | - Sudhi Mahadevan
- Department of Materials Science and Engineering, Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, Hong Kong SAR, P. R. China
| | - Kuan Liu
- Department of Electronic and Information Engineering, Research Institute for Smart Energy (RISE), The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, P. R. China.
| | - Zhen Lu
- Department of Electronic and Information Engineering, Research Institute for Smart Energy (RISE), The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, P. R. China.
| | - Jiaming Huang
- Department of Electronic and Information Engineering, Research Institute for Smart Energy (RISE), The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, P. R. China.
| | - Zhiwei Ren
- Department of Electronic and Information Engineering, Research Institute for Smart Energy (RISE), The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, P. R. China.
| | - Fuyou Liao
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, P. R. China
| | - Yang Chai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, P. R. China
| | - Patrick Wk Fong
- Department of Electronic and Information Engineering, Research Institute for Smart Energy (RISE), The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, P. R. China.
| | - Sai-Wing Tsang
- Department of Materials Science and Engineering, Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, Hong Kong SAR, P. R. China
| | - Shirong Lu
- Thin-film Solar Technology Research Center, Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing, 400714, P. R. China
| | - Gang Li
- Department of Electronic and Information Engineering, Research Institute for Smart Energy (RISE), The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, P. R. China.
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27
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Byeon H, Kim B, Hwang H, Kim M, Yoo H, Song H, Lee SH, Lee BH. Flexible Organic Photodetectors with Mechanically Robust Zinc Oxide Nanoparticle Thin Films. ACS APPLIED MATERIALS & INTERFACES 2023; 15:10926-10935. [PMID: 36797035 DOI: 10.1021/acsami.3c00947] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Zinc oxide nanoparticle (ZnO-NP) thin films have been intensively used as electron transport layers (ETLs) in organic optoelectronic devices, but their moderate mechanical flexibility hinders their application to flexible electronic devices. This study reveals that the multivalent interaction between ZnO-NPs and multicharged conjugated electrolytes, such as diphenylfluorene pyridinium bromide derivative (DFPBr-6), can significantly improve the mechanical flexibility of ZnO-NP thin films. Intermixing ZnO-NPs and DFPBr-6 facilitates the coordination between bromide anions (from the DFPBr-6) and zinc cations on ZnO-NP surfaces, forming Zn2+-Br- bonds. Different from a conventional electrolyte (e.g., KBr), DFPBr-6 with six pyridinium ionic side chains holds the Br--chelated ZnO-NPs adjacent to DFP+ through Zn2+-Br--N+ bonds. Consequently, ZnO-NP:DFPBr-6 thin films exhibit improved mechanical flexibility with a critical bending radius as low as 1.5 mm under tensile bending conditions. Flexible organic photodetectors with ZnO-NP:DFPBr-6 thin films as ETLs demonstrate reliable device performances with high R (0.34 A/W) and D* (3.03 × 1012 Jones) even after 1000 times repetitive bending at a bending radius of 4.0 mm, whereas devices with ZnO-NP and ZnO-NP:KBr ETLs yield >85% reduction in R and D* under the same bending condition.
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Affiliation(s)
- Huikyeong Byeon
- Department of Chemical Engineering and Materials Science, Graduate Program in System Health Science and Engineering, Ewha Womans University, Seoul 03760, Republic of Korea
| | - Boyun Kim
- Department of Chemistry, Daegu University, Gyeongsan 38453, Republic of Korea
| | - Hyejee Hwang
- Department of Chemical Engineering and Materials Science, Graduate Program in System Health Science and Engineering, Ewha Womans University, Seoul 03760, Republic of Korea
| | - Minji Kim
- Department of Chemical Engineering and Materials Science, Graduate Program in System Health Science and Engineering, Ewha Womans University, Seoul 03760, Republic of Korea
| | - Hyeonjin Yoo
- Department of Chemical Engineering and Materials Science, Graduate Program in System Health Science and Engineering, Ewha Womans University, Seoul 03760, Republic of Korea
| | - Hyebin Song
- Department of Chemistry, Daegu University, Gyeongsan 38453, Republic of Korea
| | - Seoung Ho Lee
- Department of Chemistry, Daegu University, Gyeongsan 38453, Republic of Korea
| | - Byoung Hoon Lee
- Department of Chemical Engineering and Materials Science, Graduate Program in System Health Science and Engineering, Ewha Womans University, Seoul 03760, Republic of Korea
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28
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Ollearo R, Ma X, Akkerman HB, Fattori M, Dyson MJ, van Breemen AJ, Meskers SC, Dijkstra W, Janssen RA, Gelinck GH. Vitality surveillance at distance using thin-film tandem-like narrowband near-infrared photodiodes with light-enhanced responsivity. SCIENCE ADVANCES 2023; 9:eadf9861. [PMID: 36800431 PMCID: PMC9937568 DOI: 10.1126/sciadv.adf9861] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/24/2022] [Accepted: 01/13/2023] [Indexed: 06/09/2023]
Abstract
Remote measurement of vital sign parameters like heartbeat and respiration rate represents a compelling challenge in monitoring an individual's health in a noninvasive way. This could be achieved by large field-of-view, easy-to-integrate unobtrusive sensors, such as large-area thin-film photodiodes. At long distances, however, discriminating weak light signals from background disturbance demands superior near-infrared (NIR) sensitivity and optical noise tolerance. Here, we report an inherently narrowband solution-processed, thin-film photodiode with ultrahigh and controllable NIR responsivity based on a tandem-like perovskite-organic architecture. The device has low dark currents (<10-6 mA cm-2), linear dynamic range >150 dB, and operational stability over time (>8 hours). With a narrowband quantum efficiency that can exceed 200% at 850 nm and intrinsic filtering of other wavelengths to limit optical noise, the device exhibits higher tolerance to background light than optically filtered silicon-based sensors. We demonstrate its potential in remote monitoring by measuring the heart rate and respiration rate from distances up to 130 cm in reflection.
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Affiliation(s)
- Riccardo Ollearo
- Molecular Materials and Nanosystems, Institute for Complex Molecular Systems, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, Netherlands
| | - Xiao Ma
- Molecular Materials and Nanosystems, Institute for Complex Molecular Systems, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, Netherlands
| | - Hylke B. Akkerman
- TNO at Holst Centre, High Tech Campus 31, 5656 AE Eindhoven, Netherlands
| | - Marco Fattori
- Integrated Circuits, Departments of Electrical Engineering, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, Netherlands
| | - Matthew J. Dyson
- Molecular Materials and Nanosystems, Institute for Complex Molecular Systems, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, Netherlands
| | | | - Stefan C. J. Meskers
- Molecular Materials and Nanosystems, Institute for Complex Molecular Systems, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, Netherlands
| | - Wijnand Dijkstra
- Molecular Materials and Nanosystems, Institute for Complex Molecular Systems, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, Netherlands
| | - René A. J. Janssen
- Molecular Materials and Nanosystems, Institute for Complex Molecular Systems, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, Netherlands
- Dutch Institute for Fundamental Energy Research, De Zaale 20, 5612 AJ Eindhoven, Netherlands
| | - Gerwin H. Gelinck
- Molecular Materials and Nanosystems, Institute for Complex Molecular Systems, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, Netherlands
- TNO at Holst Centre, High Tech Campus 31, 5656 AE Eindhoven, Netherlands
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29
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Fu C, Li ZY, Wang J, Zhang X, Liang FX, Lin DH, Shi XF, Fang QL, Luo LB. A Simple-Structured Perovskite Wavelength Sensor for Full-Color Imaging Application. NANO LETTERS 2023; 23:533-540. [PMID: 36595350 DOI: 10.1021/acs.nanolett.2c03932] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
In this study, simple-structured wavelength sensors were developed by depositing two back-to-back Au/MAPbI3/Au photodetectors on an MAPbI3 single crystal. This sensor could quantitatively distinguish wavelengths. Further device analysis showed that both photodetectors possess entirely disparate optoelectronic properties. Consequently, the as-developed wavelength sensor could accurately distinguish incident-light wavelengths ranging from 265 to 860 nm with a resolution of less than 1.5 nm based on the relation between the photocurrent ratios of both photodetectors and the incident light wavelengths. Notably, a high resolution and wide detection range are among the optimum reported values for such sensors and enable full-color imaging. Furthermore, technology computer-aided design (TCAD) simulations showed that a mechanism involved in distinguishing wavelengths is attributed to the wavelength-dependent photon generation rate in MAPbI3 single crystals. The high-performance MAPbI3 wavelength sensor can potentially drive the research progress of perovskites in wavelength recognition and full-color imaging.
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Affiliation(s)
- Can Fu
- School of Microelectronics, Hefei University of Technology, Hefei230009, China
| | - Zhi-Yuan Li
- School of Microelectronics, Hefei University of Technology, Hefei230009, China
| | - Jiang Wang
- School of Microelectronics, Hefei University of Technology, Hefei230009, China
| | - Xiang Zhang
- School of Microelectronics, Hefei University of Technology, Hefei230009, China
| | - Feng-Xia Liang
- School of Microelectronics, Hefei University of Technology, Hefei230009, China
| | - Di-Hua Lin
- School of Physics, Hefei University of Technology, Hefei230009, China
| | - Xiao-Feng Shi
- School of Computer Science and Information Engineering, Hefei University of Technology, Hefei230009, China
- School of Computer and Information Engineering, Fuyang Normal University, Fuyang236037, China
| | - Qun-Ling Fang
- School of Food and Biological Engineering, Hefei University of Technology, Hefei230009, China
| | - Lin-Bao Luo
- School of Microelectronics, Hefei University of Technology, Hefei230009, China
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30
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Han Z, Liao X, Zou Y, He Y, Li J, Gu Y, Hu D, Liu J, Zuo L, Liu Y, Xu X. Flexible Miniaturized Multispectral Detector Derived from Blade-Coated Organic Narrowband Response Unit Array. ACS NANO 2022; 16:21036-21046. [PMID: 36484564 DOI: 10.1021/acsnano.2c08731] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Multispectral sensing is extremely desired in intelligent systems, e.g., autonomous vehicles, encrypted information communication, and health biometric monitoring, due to its highly sensitive spectral discrimination ability. Nevertheless, rigid bulky optics and delicate optical paths in devices significantly increase their complexity and size, which subsequently impede their integration in smart optoelectronic chips for universal applications. In this work, a filterless miniaturized multispectral photodetector is realized with an organic narrowband response unit array. With the manipulation of Frenkel exciton dissociation in active layers, a series of narrowband organic sensing units with full-width-at-half-maximum (fwhm) narrowing to ∼50 nm are achieved from 700 to 1050 nm with a laudable performance of responsivity of over 60 mA/W, -3 dB bandwidth over 10 kHz, linear dynamic range (LDR) reaching ∼120 dB, and a low noise current of less than 4 × 10-14 A·Hz-0.5. Furthermore, a 6 × 8 multispectral sensing array on a flexible substrate was fabricated with blade-coating. Assisted by a computational process, we successfully demonstrate the spectral recognition with a resolution of ∼50 nm and a mismatch of ∼10 nm. Finally, the function of matter identification is successfully achieved with our multispectral detector array.
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Affiliation(s)
- Zeyao Han
- School of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing210094, China
| | - Xunfan Liao
- National Engineering Research Center for Carbohydrate Synthesis, Key Lab of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education, College of Chemistry and Chemical Engineering, Jiangxi Normal University, 99 Ziyang Avenue, Nanchang330022, China
| | - Yousheng Zou
- School of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing210094, China
| | - Yin He
- School of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing210094, China
| | - Junyu Li
- School of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing210094, China
| | - Yu Gu
- School of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing210094, China
| | - Dawei Hu
- School of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing210094, China
| | - Jiaxin Liu
- School of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing210094, China
| | - Lijian Zuo
- MOE Key Laboratory of Macromolecular Synthesis and Functionalization, State Key Laboratory of Silicon Materials, Department of Polymer Science & Engineering, Zhejiang University, Hangzhou310027, China
| | - Yongsheng Liu
- The Centre of Nanoscale Science and Technology and Key Laboratory of Functional Polymer Materials, Institute of Polymer Chemistry, College of Chemistry, Nankai University, Tianjin300071, China
| | - Xiaobao Xu
- School of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing210094, China
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing210009, China
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31
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Shan T, Hou X, Yin X, Guo X. Organic photodiodes: device engineering and applications. FRONTIERS OF OPTOELECTRONICS 2022; 15:49. [PMID: 36637681 PMCID: PMC9763529 DOI: 10.1007/s12200-022-00049-w] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/19/2022] [Accepted: 08/09/2022] [Indexed: 06/17/2023]
Abstract
Organic photodiodes (OPDs) have shown great promise for potential applications in optical imaging, sensing, and communication due to their wide-range tunable photoelectrical properties, low-temperature facile processes, and excellent mechanical flexibility. Extensive research work has been carried out on exploring materials, device structures, physical mechanisms, and processing approaches to improve the performance of OPDs to the level of their inorganic counterparts. In addition, various system prototypes have been built based on the exhibited and attractive features of OPDs. It is vital to link the device optimal design and engineering to the system requirements and examine the existing deficiencies of OPDs towards practical applications, so this review starts from discussions on the required key performance metrics for different envisioned applications. Then the fundamentals of the OPD device structures and operation mechanisms are briefly introduced, and the latest development of OPDs for improving the key performance merits is reviewed. Finally, the trials of OPDs for various applications including wearable medical diagnostics, optical imagers, spectrometers, and light communications are reviewed, and both the promises and challenges are revealed.
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Affiliation(s)
- Tong Shan
- School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Xiao Hou
- School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Xiaokuan Yin
- School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Xiaojun Guo
- School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China.
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32
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Barbosa MR, Costa ISD, Lopes TO, Valverde C, Machado DFS, Oliveira HCBD. Theoretical Model of Polarization Effects on Third-Order NLO Properties of the Stilbazolium Derivative Crystal. J Phys Chem A 2022; 126:8901-8909. [DOI: 10.1021/acs.jpca.2c04214] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Affiliation(s)
- Mateus R. Barbosa
- Laboratório de Estrutura Eletrônica e Dinâmica Molecular (LEEDMOL), Instituto de Química, Campus Samambaia, Universidade Federal de Goiás, Goiânia74690-900, GO, Brazil
| | - Igor S. Duarte Costa
- Laboratório de Modelagem de Sistemas Complexos (LMSC), Instituto de Química, Campus Universitário Darcy Ribeiro, Universidade de Brasília, Brasília70800-000, DF, Brazil
| | - Thiago O. Lopes
- Colégio Estadual Jorge Amado, Secretaria de Educação de Goiás, Cidade Ocidental72880-458, GO, Brazil
| | - Clodoaldo Valverde
- Campus de Ciências Exatas e Tecnológicas, Universidade Estadual de Goiás, Anápolis75001-970, GO, Brazil
| | - Daniel F. Scalabrini Machado
- Laboratório de Modelagem de Sistemas Complexos (LMSC), Instituto de Química, Campus Universitário Darcy Ribeiro, Universidade de Brasília, Brasília70800-000, DF, Brazil
| | - Heibbe Cristhian B. de Oliveira
- Laboratório de Estrutura Eletrônica e Dinâmica Molecular (LEEDMOL), Instituto de Química, Campus Samambaia, Universidade Federal de Goiás, Goiânia74690-900, GO, Brazil
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33
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Pan Y, Wang X, Liao Y, Xu Y, Li Y, Li Q, Zhang X, Chen J, Zhu Z, Zhao Z, Elemike EE, Furuta M, Lei W. Epitaxial Perovskite Single-Crystalline Heterojunctions for Filter-Free Ultra-Narrowband Detection with Tunable Spectral Responses. ACS APPLIED MATERIALS & INTERFACES 2022; 14:50331-50342. [PMID: 36300824 DOI: 10.1021/acsami.2c13126] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Narrowband photodetectors (NPDs) with the capability of detecting light within a selective wavelength range are in high demand for numerous emerging applications such as imaging systems, machine vision, and optical communication. Halide perovskite materials have been developed for eliminating the current complex filtering systems in NPDs due to their beneficial properties, while currently NPDs using perovskite materials are limited by hardly fully eliminated short wavelength response, low charge collection efficiency (CCE), complex fabrication process, and so forth. Herein, a series of perovskite single-crystalline heterojunctions (PSCHs) with a structure of Bi-MAPbX3/MAPbY3 are fabricated by liquid phase epitaxy for filter-free narrowband detection. By varying the halide component in the PSCH, the PSCH-based NPDs can realize continuously tunable spectral response range from blue to NIR regions and ultra-narrow full width at half-maximum (FWHM) of <20 nm. Specifically, the PSCH-based NPD with a high CCE under a large electric filed shows a high spectra rejection ratio of >1000, a fast response speed with rise/fall time of ∼160/∼225 μs, and long-term stability more than 3 months in ambient air. This work provides a simple strategy for designing low-cost and high-performance filter-free NPDs with a tunable spectral response.
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Affiliation(s)
- Yuzhu Pan
- State Key Laboratory of Nuclear Power Safety Monitoring Technology and Equipment, China Nuclear Power Engineering Co. Ltd., Shenzhen, Guangdong518045, China
- School of Electronic Science and Engineering, Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing210096, China
| | - Xin Wang
- School of Electronic Science and Engineering, Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing210096, China
| | - Yuhan Liao
- School of Electronic Science and Engineering, Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing210096, China
| | - Yubing Xu
- School of Electronic Science and Engineering, Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing210096, China
| | - Yuwei Li
- School of Electronic Science and Engineering, Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing210096, China
| | - Qing Li
- School of Electronic Science and Engineering, Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing210096, China
| | - Xiaobing Zhang
- School of Electronic Science and Engineering, Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing210096, China
| | - Jing Chen
- School of Electronic Science and Engineering, Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing210096, China
| | - Zhuoya Zhu
- School of Electronic Science and Engineering, Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing210096, China
| | - Zhiwei Zhao
- School of Electronic Science and Engineering, Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing210096, China
| | - Elias Emeka Elemike
- Department of Chemistry, School of Physical and Chemical Sciences, Faculty of Natural and Agricultural Sciences, North-West University, Mafikeng, Private Bag X2046, Mmabatho2735, South Africa
| | - Mamoru Furuta
- Department of Environmental Science and Engineering, Kochi University of Technology, Kami, Kochi782-8502, Japan
| | - Wei Lei
- School of Electronic Science and Engineering, Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing210096, China
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34
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Liu M, Fan Q, Wang J, Lin F, Zhao Z, Yang K, Zhao X, Zhou Z, Jen AKY, Zhang F. Double-Layered Strategy for Broadband Photomultiplication-Type Organic Photodetectors and Achieving Narrowband Response in Violet, Red, and Near-Infrared Light. ACS APPLIED MATERIALS & INTERFACES 2022; 14:45636-45643. [PMID: 36172726 DOI: 10.1021/acsami.2c12154] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Broadband photomultiplication-type organic photodetectors (PM-OPDs) were prepared with PMBBDT:PY3Se-2V (1:1, wt/wt) as the absorbing layer (AL) and PC71BM:P3HT (100:5, wt/wt) as the photomultiplication layer (PML) on the basis of the sandwich structure. The incident photons from ultraviolet light to the near-infrared region can be harvested by AL. The rather less P3HT in PML can produce plenty of isolated hole traps with P3HT surrounded by PC71BM; the electron tunneling injection induced by trapped holes near the Ag electrode can lead to the photomultiplication (PM) phenomenon. The performance of PM-OPDs can be effectively improved by optimizing the AL thickness. The optimal PM-OPDs exhibit a broad spectral response from 300 to 1050 nm as well as an external quantum efficiency (EQE) of 5800% at 340 nm at 10 V bias, along with a specific detectivity (D*) of 3.78 × 1013 Jones. The spectral response of PM-OPDs is controlled by the trapped-hole distribution near the Ag electrode, primarily originating from the photogenerated holes in AL. To further optimize the spectral response of PM-OPDs, the optical filter layer (OFL) was used to manipulate light field distribution in AL. The violet, red, and near-infrared-light PM-OPDs were developed by employing different OFLs.
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Affiliation(s)
- Ming Liu
- School of Physical Science and Engineering, Beijing Jiaotong University, Beijing 100044, China
| | - Qunping Fan
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xian 710049, Shanxi Province, China
- Department of Chemistry, City University of Hong Kong, Kowloon 999077, Hongkong, China
| | - Jian Wang
- College of Physics and Electronic Engineering, Taishan University, Taian 271000, Shandong Province, China
| | - Francis Lin
- Department of Chemistry, City University of Hong Kong, Kowloon 999077, Hongkong, China
| | - Zijin Zhao
- School of Physical Science and Engineering, Beijing Jiaotong University, Beijing 100044, China
| | - Kaixuan Yang
- School of Physical Science and Engineering, Beijing Jiaotong University, Beijing 100044, China
| | - Xingchao Zhao
- School of Physical Science and Engineering, Beijing Jiaotong University, Beijing 100044, China
| | - Zhengji Zhou
- National and Local Joint Engineering Research Center for High-Efficiency Display and Lighting Technology, Henan University, Kaifeng 475004, Henan Province, China
| | - Alex K-Y Jen
- Department of Chemistry, City University of Hong Kong, Kowloon 999077, Hongkong, China
- Hong Kong Institute for Clean Energy, City University of Hong Kong, Kowloon 999077, Hongkong, China
| | - Fujun Zhang
- School of Physical Science and Engineering, Beijing Jiaotong University, Beijing 100044, China
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35
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Cortés E, Wendisch FJ, Sortino L, Mancini A, Ezendam S, Saris S, de S. Menezes L, Tittl A, Ren H, Maier SA. Optical Metasurfaces for Energy Conversion. Chem Rev 2022; 122:15082-15176. [PMID: 35728004 PMCID: PMC9562288 DOI: 10.1021/acs.chemrev.2c00078] [Citation(s) in RCA: 25] [Impact Index Per Article: 12.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/09/2023]
Abstract
Nanostructured surfaces with designed optical functionalities, such as metasurfaces, allow efficient harvesting of light at the nanoscale, enhancing light-matter interactions for a wide variety of material combinations. Exploiting light-driven matter excitations in these artificial materials opens up a new dimension in the conversion and management of energy at the nanoscale. In this review, we outline the impact, opportunities, applications, and challenges of optical metasurfaces in converting the energy of incoming photons into frequency-shifted photons, phonons, and energetic charge carriers. A myriad of opportunities await for the utilization of the converted energy. Here we cover the most pertinent aspects from a fundamental nanoscopic viewpoint all the way to applications.
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Affiliation(s)
- Emiliano Cortés
- Chair
in Hybrid Nanosystems, Nano Institute Munich, Faculty of Physics, Ludwig-Maximilians-University Munich, Königinstraße 10, 80539 Munich, Germany,
| | - Fedja J. Wendisch
- Chair
in Hybrid Nanosystems, Nano Institute Munich, Faculty of Physics, Ludwig-Maximilians-University Munich, Königinstraße 10, 80539 Munich, Germany
| | - Luca Sortino
- Chair
in Hybrid Nanosystems, Nano Institute Munich, Faculty of Physics, Ludwig-Maximilians-University Munich, Königinstraße 10, 80539 Munich, Germany
| | - Andrea Mancini
- Chair
in Hybrid Nanosystems, Nano Institute Munich, Faculty of Physics, Ludwig-Maximilians-University Munich, Königinstraße 10, 80539 Munich, Germany
| | - Simone Ezendam
- Chair
in Hybrid Nanosystems, Nano Institute Munich, Faculty of Physics, Ludwig-Maximilians-University Munich, Königinstraße 10, 80539 Munich, Germany
| | - Seryio Saris
- Chair
in Hybrid Nanosystems, Nano Institute Munich, Faculty of Physics, Ludwig-Maximilians-University Munich, Königinstraße 10, 80539 Munich, Germany
| | - Leonardo de S. Menezes
- Chair
in Hybrid Nanosystems, Nano Institute Munich, Faculty of Physics, Ludwig-Maximilians-University Munich, Königinstraße 10, 80539 Munich, Germany,Departamento
de Física, Universidade Federal de
Pernambuco, 50670-901 Recife, Pernambuco, Brazil
| | - Andreas Tittl
- Chair
in Hybrid Nanosystems, Nano Institute Munich, Faculty of Physics, Ludwig-Maximilians-University Munich, Königinstraße 10, 80539 Munich, Germany
| | - Haoran Ren
- MQ Photonics
Research Centre, Department of Physics and Astronomy, Macquarie University, Macquarie
Park, New South Wales 2109, Australia
| | - Stefan A. Maier
- Chair
in Hybrid Nanosystems, Nano Institute Munich, Faculty of Physics, Ludwig-Maximilians-University Munich, Königinstraße 10, 80539 Munich, Germany,School
of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia,Department
of Phyiscs, Imperial College London, London SW7 2AZ, United Kingdom,
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36
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Liu Q, Zeiske S, Jiang X, Desta D, Mertens S, Gielen S, Shanivarasanthe R, Boyen HG, Armin A, Vandewal K. Electron-donating amine-interlayer induced n-type doping of polymer:nonfullerene blends for efficient narrowband near-infrared photo-detection. Nat Commun 2022; 13:5194. [PMID: 36057674 DOI: 10.1038/s41467-022-32845-5] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/07/2022] [Accepted: 08/21/2022] [Indexed: 11/09/2022] Open
Abstract
Inherently narrowband near-infrared organic photodetectors are highly desired for many applications, including biological imaging and surveillance. However, they suffer from a low photon-to-charge conversion efficiencies and utilize spectral narrowing techniques which strongly rely on the used material or on a nano-photonic device architecture. Here, we demonstrate a general and facile approach towards wavelength-selective near-infrared phtotodetection through intentionally n-doping 500-600 nm-thick nonfullerene blends. We show that an electron-donating amine-interlayer can induce n-doping, resulting in a localized electric field near the anode and selective collection of photo-generated carriers in this region. As only weakly absorbed photons reach this region, the devices have a narrowband response at wavelengths close to the absorption onset of the blends with a high spectral rejection ratio. These spectrally selective photodetectors exhibit zero-bias external quantum efficiencies of ~20-30% at wavelengths of 900-1100 nm, with a full-width-at-half-maximum of ≤50 nm, as well as detectivities of >1012 Jones.
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Affiliation(s)
- Quan Liu
- Hasselt University, Agoralaan 1, 3590, Diepenbeek, Belgium. .,IMOMEC Division, IMEC, Wetenschapspark 1, 3590, Diepenbeek, Belgium.
| | - Stefan Zeiske
- Department of Physics, Swansea University, Singleton Campus, Swansea, SA2 8PP, UK
| | - Xueshi Jiang
- Hasselt University, Agoralaan 1, 3590, Diepenbeek, Belgium.,IMOMEC Division, IMEC, Wetenschapspark 1, 3590, Diepenbeek, Belgium
| | - Derese Desta
- Hasselt University, Agoralaan 1, 3590, Diepenbeek, Belgium.,IMOMEC Division, IMEC, Wetenschapspark 1, 3590, Diepenbeek, Belgium
| | - Sigurd Mertens
- Hasselt University, Agoralaan 1, 3590, Diepenbeek, Belgium.,IMOMEC Division, IMEC, Wetenschapspark 1, 3590, Diepenbeek, Belgium
| | - Sam Gielen
- Hasselt University, Agoralaan 1, 3590, Diepenbeek, Belgium.,IMOMEC Division, IMEC, Wetenschapspark 1, 3590, Diepenbeek, Belgium
| | - Rachith Shanivarasanthe
- Hasselt University, Agoralaan 1, 3590, Diepenbeek, Belgium.,IMOMEC Division, IMEC, Wetenschapspark 1, 3590, Diepenbeek, Belgium
| | - Hans-Gerd Boyen
- Hasselt University, Agoralaan 1, 3590, Diepenbeek, Belgium.,IMOMEC Division, IMEC, Wetenschapspark 1, 3590, Diepenbeek, Belgium
| | - Ardalan Armin
- Department of Physics, Swansea University, Singleton Campus, Swansea, SA2 8PP, UK
| | - Koen Vandewal
- Hasselt University, Agoralaan 1, 3590, Diepenbeek, Belgium. .,IMOMEC Division, IMEC, Wetenschapspark 1, 3590, Diepenbeek, Belgium.
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37
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Tsai KW, Madhaiyan G, Lai LH, Hsiao YT, Wu JL, Liao CY, Hou CH, Shyue JJ, Chang YM. Bulk-Heterojunction Adjustment Enables a Self-filtering Organic Photodetector with a Narrowband Response. ACS APPLIED MATERIALS & INTERFACES 2022; 14:38004-38012. [PMID: 35960185 DOI: 10.1021/acsami.2c08336] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Image-sensor technology is the foundation of many emerging applications, where the photodetector is designed to interact with incoming photons that have specific colors or wavelengths. A color filter is therefore crucial to enable the selective spectral response of the photodetector and to eliminate the crosstalk interference resulting from ambient lights. Unfortunately, a reduced detection sensitivity of the photodetector is inevitable due to an imperfect light filtering, which greatly limits the practical applications of selective-response photodetectors. Herein, we demonstrate a bulk-heterojunction (BHJ) organic composite featuring a self-filtering light responsive characteristic. Through a careful optimization of the BHJ film, the organic photodetector (OPD) demonstrates a high-selective spectral response to the infrared (IR) radiation without the need of applying a color filter. As a result, the self-filtering top-illuminated OPD exhibits a narrowband external quantum efficiency (EQE) of 53% with a narrow full width at half-maximum (fwhm) of 56 nm centering at 1080 nm. A high responsivity of 0.46 A W-1 is also achieved at 1080 nm wavelength due to the self-filtering characteristic.
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Affiliation(s)
- Kuen-Wei Tsai
- Raynergy Tek Incorporation, 2F, 60, Park Ave. 2, Hsinchu Science Park, Hsinchu 30844, Taiwan
| | - Govindasamy Madhaiyan
- Raynergy Tek Incorporation, 2F, 60, Park Ave. 2, Hsinchu Science Park, Hsinchu 30844, Taiwan
| | - Lai-Hung Lai
- VisEra Technologies Company Limited, 12, Dusing Rd. 1, Hsinchu Science Park, Hsinchu City 30078, Taiwan
| | - Yu-Tang Hsiao
- Raynergy Tek Incorporation, 2F, 60, Park Ave. 2, Hsinchu Science Park, Hsinchu 30844, Taiwan
| | - Jhao-Lin Wu
- Raynergy Tek Incorporation, 2F, 60, Park Ave. 2, Hsinchu Science Park, Hsinchu 30844, Taiwan
| | - Chuang-Yi Liao
- Raynergy Tek Incorporation, 2F, 60, Park Ave. 2, Hsinchu Science Park, Hsinchu 30844, Taiwan
| | - Cheng-Hung Hou
- Research Center for Applied Science, Academia Sinica, Taipei 11529, Taiwan
| | - Jing-Jong Shyue
- Research Center for Applied Science, Academia Sinica, Taipei 11529, Taiwan
| | - Yi-Ming Chang
- Raynergy Tek Incorporation, 2F, 60, Park Ave. 2, Hsinchu Science Park, Hsinchu 30844, Taiwan
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38
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Cao H, Si Y, Chen Y, Liang Q, Wu H. Double-Side Selective Spectral Response Organic Photodetectors for Demultiplexing Optical Signals. ACS APPLIED MATERIALS & INTERFACES 2022; 14:34926-34936. [PMID: 35866512 DOI: 10.1021/acsami.2c07924] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Selective spectral response photodetectors (PDs) capable of accurately capturing the color of images have broad applications in industry and academia. Here, we demonstrate filter-free, wavelength-selective detection organic photodetectors (OPDs) with two distinct response ranges and having the planar bilayer heterojunction device structure by employing either a (semi-)transparent anode or a cathode as the incident light window. The resultant OPDs exhibit a responsivity of 51 mA W-1 in the range 300-650 nm and 11 mA W-1 in the range 650-850 nm under top illumination condition. Similarly, the devices show a responsivity of 2 mA W-1 for the short-wavelength region and 131 mA W-1 for the long-wavelength region when under bottom illumination condition, indicating a high responsivity ratio that meets the requirements for selective detection. Hence, our individual device not only works in either visible or NIR range but also provides narrowband detection with spectral widths down to 100 nm in the NIR range. The working mechanism of spectral selectivity is identified through quantitative analysis of the external quantum efficiency (EQE) spectra using optical modeling when compared to the OPDs with bulk heterojunction structure, thus clarifying the general validity of the device design concept. Finally, our OPDs can demultiplex intermixed optical signals from the light-communication system successfully. Our results should inspire new studies on the device design concept and new applications of OPDs.
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Affiliation(s)
- Huan Cao
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, P. R. China
| | - Yichuan Si
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, P. R. China
| | - Yihui Chen
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, P. R. China
| | - Quanbin Liang
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, P. R. China
| | - Hongbin Wu
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, P. R. China
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Liu M, Fan Q, Yang K, Zhao Z, Zhao X, Zhou Z, Zhang J, Lin F, Jen AKY, Zhang F. Broadband photomultiplication-type polymer photodetectors and its application in light-controlled circuit. Sci China Chem 2022. [DOI: 10.1007/s11426-022-1296-2] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/17/2022]
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40
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Liu S, Ding N, Wu Y, Zi L, Wang Y, Hu J, Xie T, Zhou D, Bai X, Xu W, Song H. Narrowband Near-Infrared Photodetectors Based on Perovskite Waveguide Devices. J Phys Chem Lett 2022; 13:6057-6063. [PMID: 35758876 DOI: 10.1021/acs.jpclett.2c01301] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Organic-inorganic perovskites have attracted great interest for developing wavelength-selective photodetectors. Currently, the spectral response range of narrowband photodetectors is mainly concentrated within the visible light region, lacking near-infrared photodetectors. Here, we present perovskite narrowband near-infrared photodetectors achieved by transverse propagation of light in perovskite waveguide devices for the first time. The response spectra of photodetectors are continuously tuned from 750 to 1000 nm by changing the perovskite component and the position of the incident light with the full width at half-maximum of 25-80 nm. The theoretical and experimental results reveal that the typical perovskite photodetectors serve as an optical waveguide to confine and propagate the light, in which the long wavelength light propagates a longer distance; oppositely, the short wavelength light with the higher loss in devices fails to produce a photoresponse, owing to the wavelength dependent absorption of perovskite. This provides a new concept for designing narrowband photodetectors and will simulate new applications.
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Affiliation(s)
- Sen Liu
- College of Physics, Jilin University, Changchun 130012, China
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Nan Ding
- College of Physics, Jilin University, Changchun 130012, China
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Yanjie Wu
- College of Physics, Jilin University, Changchun 130012, China
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Lu Zi
- College of Physics, Jilin University, Changchun 130012, China
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Yue Wang
- College of Physics, Jilin University, Changchun 130012, China
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Junhua Hu
- State Centre for International Cooperation on Designer Low-carbon & Environmental Materials, School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, China
| | - Tianyu Xie
- College of Physics, Jilin University, Changchun 130012, China
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Donglei Zhou
- College of Physics, Jilin University, Changchun 130012, China
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Xue Bai
- College of Physics, Jilin University, Changchun 130012, China
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Wen Xu
- College of Physics, Jilin University, Changchun 130012, China
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
- Key Laboratory of New Energy and Rare Earth Resource Utilization of State Ethnic Affairs Commission, Key Laboratory of Photosensitive Materials & Devices of Liaoning Province, School of Physics and Materials Engineering, Dalian Minzu University, 18 Liaohe West Road, Dalian 116600, P. R. China
| | - Hongwei Song
- College of Physics, Jilin University, Changchun 130012, China
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
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Wang T, Zhao K, Wang P, Shen W, Gao H, Qin Z, Wang Y, Li C, Deng H, Hu C, Jiang L, Dong H, Wei Z, Li L, Hu W. Intrinsic Linear Dichroism of Organic Single Crystals toward High-Performance Polarization-Sensitive Photodetectors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2105665. [PMID: 34622516 DOI: 10.1002/adma.202105665] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/21/2021] [Revised: 08/31/2021] [Indexed: 06/13/2023]
Abstract
The ability to detect light in photodetectors is central to practical optoelectronic applications, which has been demonstrated in inorganic semiconductor devices. However, so far, the study of polarization-sensitive organic photodetectors, which have unique applications in flexible and wearable electronics, has not received much attention. Herein, the construction of polarization-sensitive photodetectors based on the single crystals of a superior optoelectronic organic semiconductor, 2,6-diphenyl anthracene (DPA), is demonstrated. The systematic characterization of two-dimensionally grown DPA crystals with various techniques definitely show their strong anisotropy in molecular vibration, optical reflectance and optical absorption. In terms of polarization sensitivity, DPA-crystal based photodetectors exhibit a linear dichroic ratio up to ≈1.9. Theoretical calculations confirm that intrinsic linear dichroism, originated from the anisotropic in-plane crystal structure, is responsible for the polarization sensitivity of DPA crystals. This work opens up a new door for exploiting organic semiconductors for developing highly compact polarization photodetectors and providing new functionalities in novel flexible optical and optoelectronic applications.
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Affiliation(s)
- Tianyu Wang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
| | - Kai Zhao
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Pan Wang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Wanfu Shen
- State Key Laboratory of Precision Measuring Technology and Instruments, Tianjin University, Tianjin, 300072, China
| | - Haikuo Gao
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
- School of Chemistry and Chemical Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhengsheng Qin
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
- School of Chemistry and Chemical Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yongshuai Wang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
- School of Chemistry and Chemical Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Chunlei Li
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
- School of Chemistry and Chemical Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Huixiong Deng
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Chunguang Hu
- State Key Laboratory of Precision Measuring Technology and Instruments, Tianjin University, Tianjin, 300072, China
| | - Lang Jiang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
| | - Huanli Dong
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Liqiang Li
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering, Tianjin, 300072, China
| | - Wenping Hu
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering, Tianjin, 300072, China
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Eisner F, Foot G, Yan J, Azzouzi M, Georgiadou DG, Sit WY, Firdaus Y, Zhang G, Lin YH, Yip HL, Anthopoulos TD, Nelson J. Emissive Charge-Transfer States at Hybrid Inorganic/Organic Heterojunctions Enable Low Non-Radiative Recombination and High-Performance Photodetectors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2104654. [PMID: 34611947 DOI: 10.1002/adma.202104654] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/17/2021] [Revised: 08/10/2021] [Indexed: 06/13/2023]
Abstract
Hybrid devices based on a heterojunction between inorganic and organic semiconductors have offered a means to combine the advantages of both classes of materials in optoelectronic devices, but, in practice, the performance of such devices has often been disappointing. Here, it is demonstrated that charge generation in hybrid inorganic-organic heterojunctions consisting of copper thiocyanate (CuSCN) and a variety of molecular acceptors (ITIC, IT-4F, Y6, PC70 BM, C70 , C60 ) proceeds via emissive charge-transfer (CT) states analogous to those found at all-organic heterojunctions. Importantly, contrary to what has been observed at previous organic-inorganic heterojunctions, the dissociation of the CT-exciton and subsequent charge separation is efficient, allowing the fabrication of planar photovoltaic devices with very low non-radiative voltage losses (0.21 ± 0.02 V). It is shown that such low non-radiative recombination enables the fabrication of simple and cost-effective near-IR (NIR) detectors with extremely low dark current (4 pA cm-2 ) and noise spectral density (3 fA Hz-1/2 ) at no external bias, leading to specific detectivities at NIR wavelengths of just under 1013 Jones, close to the performance of commercial silicon photodetectors. It is believed that this work demonstrates the possibility for hybrid heterojunctions to exploit the unique properties of both inorganic and organic semiconductors for high-performance opto-electronic devices.
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Affiliation(s)
- Flurin Eisner
- Department of Physics, Imperial College London, South Kensington, London, SW7 2AZ, UK
| | - Georgie Foot
- Department of Physics, Imperial College London, South Kensington, London, SW7 2AZ, UK
| | - Jun Yan
- Department of Physics, Imperial College London, South Kensington, London, SW7 2AZ, UK
| | - Mohammed Azzouzi
- Department of Physics, Imperial College London, South Kensington, London, SW7 2AZ, UK
| | - Dimitra G Georgiadou
- Department of Physics, Imperial College London, South Kensington, London, SW7 2AZ, UK
- Centre for Electronics Frontiers, Electronics and Computer Science, University of Southampton, Southampton, SO17 1BJ, UK
| | - Wai Yu Sit
- Department of Physics, Imperial College London, South Kensington, London, SW7 2AZ, UK
| | - Yuliar Firdaus
- Division of Physical Sciences and Engineering and KAUST Solar Centre, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
- Research Center for Electronics and Telecommunication, Indonesian Institute of Science, Jalan Sangkuriang Komplek LIPI Building 20 level 4, Bandung, 40135, Indonesia
| | - Guichuan Zhang
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China
| | - Yen-Hung Lin
- Department of Physics, University of Oxford, Parks Road, Oxford, OX1 3PU, UK
| | - Hin-Lap Yip
- Department of Materials Science and Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong
| | - Thomas D Anthopoulos
- Division of Physical Sciences and Engineering and KAUST Solar Centre, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Jenny Nelson
- Department of Physics, Imperial College London, South Kensington, London, SW7 2AZ, UK
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Wang X, Li J, Chen Y, Ran J, Yuan Y, Yang B. Spray-Coating Thick Films of All-Inorganic Halide Perovskites for Filterless Narrowband Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2022; 14:24583-24591. [PMID: 35580174 DOI: 10.1021/acsami.2c03585] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
A significant challenge facing perovskite narrowband photodetectors is making high-quality and thick enough films. Here, we report a facile one-step spray-coating approach to deposit cesium lead halide perovskite thick films for filterless narrowband photodetectors, which exhibited a specific detectivity of 2.43 × 1010 Jones at 655 nm with an fwhm of 25 nm. We demonstrated that both substrate temperature and deposition time during the spray-coating process are key factors that govern the thickness and morphology of perovskite films. The photodetection behavior was dependent on the film thickness, and the narrowband photoresponse was recorded at a 3.9 μm thickness. We discovered that the internal electric field also plays a critical role in determining the narrowband photoresponse behavior. A distinct photoresponse behavior was observed when respectively applying a reverse bias and a forward bias, which is ascribed to the trade-off between the charge-trapping effect and charge extraction under the internal built-in electric field in different biased conditions. Through changing the halogen composition of perovskites from CsPbCl2Br to CsPbI2Br, the peak position of the narrowband spectral photoresponse was observed to shift from 460 to 660 nm. This study not only offers a controllable spray-coating approach to develop thick perovskite films but also provides an important guidance for the rational design of filterless narrowband photodetectors for practical applications in industrial control, visual imaging, and biological sensing.
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Affiliation(s)
- Xiaozheng Wang
- College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Jia Li
- College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Yifu Chen
- School of Physics and Electronics, Central South University, Changsha, Hunan 410083, China
| | - Junhui Ran
- College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Yongbo Yuan
- School of Physics and Electronics, Central South University, Changsha, Hunan 410083, China
| | - Bin Yang
- College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, China
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Kim JH, Schembri T, Bialas D, Stolte M, Würthner F. Slip-Stacked J-Aggregate Materials for Organic Solar Cells and Photodetectors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2104678. [PMID: 34668248 DOI: 10.1002/adma.202104678] [Citation(s) in RCA: 58] [Impact Index Per Article: 29.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/18/2021] [Revised: 08/16/2021] [Indexed: 06/13/2023]
Abstract
Dye-dye interactions affect the optical and electronic properties in organic semiconductor films of light harvesting and detecting optoelectronic applications. This review elaborates how to tailor these properties of organic semiconductors for organic solar cells (OSCs) and organic photodiodes (OPDs). While these devices rely on similar materials, the demands for their optical properties are rather different, the former requiring a broad absorption spectrum spanning from the UV over visible up to the near-infrared region and the latter an ultra-narrow absorption spectrum at a specific, targeted wavelength. In order to design organic semiconductors satisfying these demands, fundamental insights on the relationship of optical properties are provided depending on molecular packing arrangement and the resultant electronic coupling thereof. Based on recent advancements in the theoretical understanding of intermolecular interactions between slip-stacked dyes, distinguishing classical J-aggregates with predominant long-range Coulomb coupling from charge transfer (CT)-mediated or -coupled J-aggregates, whose red-shifts are primarily governed by short-range orbital interactions, is suggested. Within this framework, the relationship between aggregate structure and functional properties of representative classes of dye aggregates is analyzed for the most advanced OSCs and wavelength-selective OPDs, providing important insights into the rational design of thin-film optoelectronic materials.
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Affiliation(s)
- Jin Hong Kim
- Center for Nanosystems Chemistry (CNC) and Bavarian Polymer Institute (BPI), Universität Würzburg, Theodor-Boveri-Weg, 97074, Würzburg, Germany
| | - Tim Schembri
- Center for Nanosystems Chemistry (CNC) and Bavarian Polymer Institute (BPI), Universität Würzburg, Theodor-Boveri-Weg, 97074, Würzburg, Germany
| | - David Bialas
- Institut für Organische Chemie, Universität Würzburg, Am Hubland, 97074, Würzburg, Germany
| | - Matthias Stolte
- Center for Nanosystems Chemistry (CNC) and Bavarian Polymer Institute (BPI), Universität Würzburg, Theodor-Boveri-Weg, 97074, Würzburg, Germany
- Institut für Organische Chemie, Universität Würzburg, Am Hubland, 97074, Würzburg, Germany
| | - Frank Würthner
- Center for Nanosystems Chemistry (CNC) and Bavarian Polymer Institute (BPI), Universität Würzburg, Theodor-Boveri-Weg, 97074, Würzburg, Germany
- Institut für Organische Chemie, Universität Würzburg, Am Hubland, 97074, Würzburg, Germany
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45
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Kang M, Hassan SZ, Ko SM, Choi C, Kim J, Parumala SKR, Kim YH, Jang YH, Yoon J, Jee DW, Chung DS. A Molecular-Switch-Embedded Organic Photodiode for Capturing Images against Strong Backlight. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2200526. [PMID: 35233855 DOI: 10.1002/adma.202200526] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/18/2022] [Revised: 02/16/2022] [Indexed: 06/14/2023]
Abstract
When the intensity of the incident light increases, the photocurrents of organic photodiodes (OPDs) exhibit relatively early saturation, due to which OPDs cannot easily detect objects against strong backlights, such as sunlight. In this study, this problem is addressed by introducing a light-intensity-dependent transition of the operation mode, such that the operation mode of the OPD autonomously changes to overcome early photocurrent saturation as the incident light intensity passes the threshold intensity. The photoactive layer is doped with a strategically designed and synthesized molecular switch, 1,2-bis-(2-methyl-5-(4-cyanobiphenyl)-3-thienyl)tetrafluorobenzene (DAB). The proposed OPD exhibits a typical OPD performance with an external quantum efficiency (EQE) of <100% and a photomultiplication behavior with an EQE of >100% under low-intensity and high-intensity light illuminations, respectively, thereby resulting in an extension of the photoresponse linearity to a light intensity of 434 mW cm-2 . This unique and reversible transition of the operation mode can be explained by the unbalanced quantum yield of photocyclization/photocycloreversion of the molecular switch. The details of the operation mechanism are discussed in conjunction with various photophysical analyses. Furthermore, they establish a prototype image sensor with an array of molecular-switch-embedded OPD pixels to demonstrate their extremely high sensitivity against strong light illumination.
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Affiliation(s)
- Mingyun Kang
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Syed Zahid Hassan
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Seong-Min Ko
- Department of Electrical and Computer Engineering, Ajou University, Suwon, 16499, Republic of Korea
| | - Changwon Choi
- Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Republic of Korea
| | - Juhee Kim
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Santosh K R Parumala
- Graduate Department of Chemical Materials, and Institute for Plastic Information and Energy Materials, Pusan National University, Busan, 46241, Republic of Korea
| | - Yun-Hi Kim
- Department of Chemistry and RIGET, Gyeongsang National University, Jinju, 52828, Republic of Korea
| | - Yun Hee Jang
- Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Republic of Korea
| | - Jinhwan Yoon
- Graduate Department of Chemical Materials, and Institute for Plastic Information and Energy Materials, Pusan National University, Busan, 46241, Republic of Korea
| | - Dong-Woo Jee
- Department of Electrical and Computer Engineering, Ajou University, Suwon, 16499, Republic of Korea
| | - Dae Sung Chung
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
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Chen K, Zhang X, Chen P, Guo J, He M, Chen Y, Qiu X, Liu Y, Chen H, Zeng Z, Wang X, Yuan J, Ma W, Liao L, Nguyen T, Hu Y. Solution-Processed CsPbBr 3 Quantum Dots/Organic Semiconductor Planar Heterojunctions for High-Performance Photodetectors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2105856. [PMID: 35229493 PMCID: PMC9036026 DOI: 10.1002/advs.202105856] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/16/2022] [Revised: 02/13/2022] [Indexed: 06/14/2023]
Abstract
Planar heterojunctions (PHJs) are fundamental building blocks for construction of semiconductor devices. However, fabricating PHJs with solution-processable semiconductors such as organic semiconductors (OSCs) is a challenge. Herein, utilizing the orthogonal solubility and good wettability between CsPbBr3 perovskite quantum dots (PQDs) and OSCs, fabrication of solution-processed PQD/OSC PHJs are reported. The phototransistors based on bilayer PQD/PDVT-10 PHJs show responsivity up to 1.64 × 104 A W-1 , specific detectivity of 3.17 × 1012 Jones, and photosensitivity of 5.33 × 106 when illuminated by 450 nm light. Such high photodetection performance is attributed to efficient charge dissociation and transport, as well as the photogating effect in the PHJs. Furthermore, the tri-layer PDVT-10/PQD/Y6 PHJs are used to construct photodiodes working in self-powered mode, which exhibit broad range photoresponse from ultraviolet to near-infrared, with responsivity approaching 10-1 A W-1 and detectivity over 106 Jones. These results present a convenient and scalable production processes for solution-processed PHJs and show their great potential for optoelectronic applications.
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Affiliation(s)
- Kaixuan Chen
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education and International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan ProvinceCollege of Semiconductors (College of Integrated Circuits)Hunan UniversityChangsha410082China
| | - Xuliang Zhang
- Institute of Functional Nano and Soft Materials (FUNSOM) Jiangsu Key Laboratory for Carbon‐Based Functional Materials and Devicesthe Collaborative Innovation Center of Suzhou Nano Science and TechnologySoochow UniversitySuzhou215123China
| | - Ping‐An Chen
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of EducationSchool of Physics and ElectronicsHunan UniversityChangsha410082China
| | - Jing Guo
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of EducationSchool of Physics and ElectronicsHunan UniversityChangsha410082China
| | - Mai He
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of EducationSchool of Physics and ElectronicsHunan UniversityChangsha410082China
| | - Yanqin Chen
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of EducationSchool of Physics and ElectronicsHunan UniversityChangsha410082China
| | - Xincan Qiu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of EducationSchool of Physics and ElectronicsHunan UniversityChangsha410082China
| | - Yu Liu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of EducationSchool of Physics and ElectronicsHunan UniversityChangsha410082China
| | - Huajie Chen
- Key Laboratory of Environmentally Friendly Chemistry and Applications of Ministry of EducationCollege of ChemistryXiangtan UniversityXiangtan411105China
| | - Zebing Zeng
- State Key Laboratory of Chemo/Biosensing and ChemometricsCollege of Chemistry and Chemical EngineeringHunan UniversityChangsha410082China
| | - Xiao Wang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of EducationSchool of Physics and ElectronicsHunan UniversityChangsha410082China
| | - Jianyu Yuan
- Institute of Functional Nano and Soft Materials (FUNSOM) Jiangsu Key Laboratory for Carbon‐Based Functional Materials and Devicesthe Collaborative Innovation Center of Suzhou Nano Science and TechnologySoochow UniversitySuzhou215123China
| | - Wanli Ma
- Institute of Functional Nano and Soft Materials (FUNSOM) Jiangsu Key Laboratory for Carbon‐Based Functional Materials and Devicesthe Collaborative Innovation Center of Suzhou Nano Science and TechnologySoochow UniversitySuzhou215123China
| | - Lei Liao
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education and International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan ProvinceCollege of Semiconductors (College of Integrated Circuits)Hunan UniversityChangsha410082China
| | - Thuc‐Quyen Nguyen
- Center for Polymers and Organic SolidsDepartment of Chemistry and BiochemistryUniversity of California at Santa BarbaraSanta BarbaraCA93106USA
| | - Yuanyuan Hu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education and International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan ProvinceCollege of Semiconductors (College of Integrated Circuits)Hunan UniversityChangsha410082China
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of EducationSchool of Physics and ElectronicsHunan UniversityChangsha410082China
- Shenzhen Research Institute of Hunan UniversityShenzhen518063China
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Jacoutot P, Scaccabarozzi AD, Zhang T, Qiao Z, Aniés F, Neophytou M, Bristow H, Kumar R, Moser M, Nega AD, Schiza A, Dimitrakopoulou-Strauss A, Gregoriou VG, Anthopoulos TD, Heeney M, McCulloch I, Bakulin AA, Chochos CL, Gasparini N. Infrared Organic Photodetectors Employing Ultralow Bandgap Polymer and Non-Fullerene Acceptors for Biometric Monitoring. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2200580. [PMID: 35246948 DOI: 10.1002/smll.202200580] [Citation(s) in RCA: 23] [Impact Index Per Article: 11.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/26/2022] [Revised: 02/14/2022] [Indexed: 06/14/2023]
Abstract
Recent efforts in the field of organic photodetectors (OPD) have been focused on extending broadband detection into the near-infrared (NIR) region. Here, two blends of an ultralow bandgap push-pull polymer TQ-T combined with state-of-the-art non-fullerene acceptors, IEICO-4F and Y6, are compared to obtain OPDs for sensing in the NIR beyond 1100 nm, which is the cut off for benchmark Si photodiodes. It is observed that the TQ-T:IEICO-4F device has a superior IR responsivity (0.03 AW-1 at 1200 nm and -2 V bias) and can detect infrared light up to 1800 nm, while the TQ-T:Y6 blend shows a lower responsivity of 0.01 AW-1 . Device physics analyses are tied with spectroscopic and morphological studies to link the superior performance of TQ-T:IEICO-4F OPD to its faster charge separation as well as more favorable donor-acceptor domains mixing. In the polymer blend with Y6, the formation of large agglomerates that exceed the exciton diffusion length, which leads to high charge recombination, is observed. An application of these devices as biometric sensors for real-time heart rate monitoring via photoplethysmography, utilizing infrared light, is demonstrated.
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Affiliation(s)
- Polina Jacoutot
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, London, W12 0BZ, UK
| | - Alberto D Scaccabarozzi
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal, 23955, Saudi Arabia
| | - Tianyi Zhang
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, London, W12 0BZ, UK
| | - Zhuoran Qiao
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, London, W12 0BZ, UK
| | - Filip Aniés
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, London, W12 0BZ, UK
| | - Marios Neophytou
- Department of Chemistry, Chemistry Research Laboratory, University of Oxford, Oxford, OX1 3TA, UK
| | - Helen Bristow
- Department of Chemistry, Chemistry Research Laboratory, University of Oxford, Oxford, OX1 3TA, UK
| | - Rhea Kumar
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, London, W12 0BZ, UK
| | - Maximilian Moser
- Department of Chemistry, Chemistry Research Laboratory, University of Oxford, Oxford, OX1 3TA, UK
| | - Alkmini D Nega
- Clinical Cooperation Unit Nuclear Medicine, German Cancer Research Center, 69120, Heidelberg, Germany
| | - Andriana Schiza
- Institute of Chemical Biology, National Hellenic Research Foundation, 48 Vassileos Constantinou Avenue, Athens, 11635, Greece
| | | | - Vasilis G Gregoriou
- Advent Technologies SA, Stadiou Street, Platani, Rio, Patras, 26504, Greece
- National Hellenic Research Foundation, 48 Vassileos Constantinou Avenue, Athens, 11635, Greece
| | - Thomas D Anthopoulos
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal, 23955, Saudi Arabia
| | - Martin Heeney
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, London, W12 0BZ, UK
| | - Iain McCulloch
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal, 23955, Saudi Arabia
- Department of Chemistry, Chemistry Research Laboratory, University of Oxford, Oxford, OX1 3TA, UK
| | - Artem A Bakulin
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, London, W12 0BZ, UK
| | - Christos L Chochos
- Institute of Chemical Biology, National Hellenic Research Foundation, 48 Vassileos Constantinou Avenue, Athens, 11635, Greece
- Advent Technologies SA, Stadiou Street, Platani, Rio, Patras, 26504, Greece
| | - Nicola Gasparini
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, London, W12 0BZ, UK
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48
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Xing S, Kublitski J, Hänisch C, Winkler LC, Li T, Kleemann H, Benduhn J, Leo K. Photomultiplication-Type Organic Photodetectors for Near-Infrared Sensing with High and Bias-Independent Specific Detectivity. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2105113. [PMID: 34994114 PMCID: PMC8895121 DOI: 10.1002/advs.202105113] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/09/2021] [Revised: 12/09/2021] [Indexed: 06/09/2023]
Abstract
Highly responsive organic photodetectors allow a plethora of applications in fields like imaging, health, security monitoring, etc. Photomultiplication-type organic photodetectors (PM-OPDs) are a desirable option due to their internal amplification mechanism. However, for such devices, significant gain and low dark currents are often mutually excluded since large operation voltages often induce high shot noise. Here, a fully vacuum-processed PM-OPD is demonstrated using trap-assisted electron injection in BDP-OMe:C60 material system. By applying only -1 V, compared with the self-powered working condition, the responsivity is increased by one order of magnitude, resulting in an outstanding specific detectivity of ≈1013 Jones. Remarkably, the superior detectivity in the near-infrared region is stable and almost voltage-independent up to -10 V. Compared with two photovoltaic-type photodetectors, these PM-OPDs exhibit the great potential to be easily integrated with state-of-the-art readout electronics in terms of their high responsivity, fast response speed, and bias-independent specific detectivity. The employed vacuum fabrication process and the easy-to-adapt PM-OPD concept enable seamless upscaling of production, paving the way to a commercially relevant photodetector technology.
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Affiliation(s)
- Shen Xing
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied PhysicsTechnische Universität Dresden01187DresdenGermany
| | - Jonas Kublitski
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied PhysicsTechnische Universität Dresden01187DresdenGermany
| | - Christian Hänisch
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied PhysicsTechnische Universität Dresden01187DresdenGermany
| | - Louis Conrad Winkler
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied PhysicsTechnische Universität Dresden01187DresdenGermany
| | - Tian‐yi Li
- Department of Physical ChemistryUniversity of Science and Technology BeijingBeijing100083China
| | - Hans Kleemann
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied PhysicsTechnische Universität Dresden01187DresdenGermany
| | - Johannes Benduhn
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied PhysicsTechnische Universität Dresden01187DresdenGermany
| | - Karl Leo
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied PhysicsTechnische Universität Dresden01187DresdenGermany
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49
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Chang Y, Huang L, Zhou Y, Wang J, Zhai W. Controlled Localized Phase Transition of Selenium for Color-Selective Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2022; 14:5624-5633. [PMID: 35050577 DOI: 10.1021/acsami.1c22909] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Color-selective photodetectors are widely applied in several fields; however, they suffer from complex fabrication and low resolution. Herein, we propose a simple and convenient design to achieve a logical color-selective heterojunction photodetector composed of CdS and Se with a crystalline/amorphous mixed state. The as-deposited amorphous Se top layer in the heterojunction is partly transformed to trigonal crystalline Se by localized in situ phase transformation during annealing. As these two heterojunctions have different photoresponses under the same wavelength, the integrated device can accurately identify red, green, and blue light via logical judgment. Finally, the device exhibits high recognition ability in actual tests. This work provides a potential development of high-resolution color-selective photodetectors for visible light communication and logical photoelectric devices.
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Affiliation(s)
- Yu Chang
- MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions, Northwestern Polytechnical University, Xi'an 710072, China
| | - Linfeng Huang
- MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions, Northwestern Polytechnical University, Xi'an 710072, China
| | - Yingcai Zhou
- MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions, Northwestern Polytechnical University, Xi'an 710072, China
| | - Jianyuan Wang
- MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions, Northwestern Polytechnical University, Xi'an 710072, China
| | - Wei Zhai
- MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions, Northwestern Polytechnical University, Xi'an 710072, China
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50
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Wang Y, Kublitski J, Xing S, Dollinger F, Spoltore D, Benduhn J, Leo K. Narrowband organic photodetectors - towards miniaturized, spectroscopic sensing. MATERIALS HORIZONS 2022; 9:220-251. [PMID: 34704585 DOI: 10.1039/d1mh01215k] [Citation(s) in RCA: 41] [Impact Index Per Article: 20.5] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Omnipresent quality monitoring in food products, blood-oxygen measurement in lightweight conformal wrist bands, or data-driven automated industrial production: Innovation in many fields is being empowered by sensor technology. Specifically, organic photodetectors (OPDs) promise great advances due to their beneficial properties and low-cost production. Recent research has led to rapid improvement in all performance parameters of OPDs, which are now on-par or better than their inorganic counterparts, such as silicon or indium gallium arsenide photodetectors, in several aspects. In particular, it is possible to directly design OPDs for specific wavelengths. This makes expensive and bulky optical filters obsolete and allows for miniature detector devices. In this review, recent progress of such narrowband OPDs is systematically summarized covering all aspects from narrow-photo-absorbing materials to device architecture engineering. The recent challenges for narrowband OPDs, like achieving high responsivity, low dark current, high response speed, and good dynamic range are carefully addressed. Finally, application demonstrations covering broadband and narrowband OPDs are discussed. Importantly, several exciting research perspectives, which will stimulate further research on organic-semiconductor-based photodetectors, are pointed out at the very end of this review.
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Affiliation(s)
- Yazhong Wang
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Nöthnitzer Str. 61, 01187 Dresden, Germany.
| | - Jonas Kublitski
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Nöthnitzer Str. 61, 01187 Dresden, Germany.
| | - Shen Xing
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Nöthnitzer Str. 61, 01187 Dresden, Germany.
| | - Felix Dollinger
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Nöthnitzer Str. 61, 01187 Dresden, Germany.
| | - Donato Spoltore
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Nöthnitzer Str. 61, 01187 Dresden, Germany.
| | - Johannes Benduhn
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Nöthnitzer Str. 61, 01187 Dresden, Germany.
| | - Karl Leo
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Nöthnitzer Str. 61, 01187 Dresden, Germany.
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