Multiple-exciton generation in lead selenide nanorod solar cells with external quantum efficiencies exceeding 120

Fluoride passivation of ZnO electron transport layers for efficient PbSe colloidal quantum dot photovoltaics

Lead selenide (PbSe) colloidal quantum dots (CQDs) are suitable for the development of the next-generation of photovoltaics (PVs) because of efficient multiple-exciton generation and strong charge coupling ability. To date, the reported high-efficient PbSe CQD PVs use spin-coated zinc oxide (ZnO) as the electron transport layer (ETL). However, it is found that the surface defects of ZnO present a difficulty in completion of passivation, and this impedes the continuous progress of devices. To address this disadvantage, fluoride (F) anions are employed for the surface passivation of ZnO through a chemical bath deposition method (CBD). The F-passivated ZnO ETL possesses decreased densities of oxygen vacancy and a favorable band alignment. Benefiting from these improvements, PbSe CQD PVs report an efficiency of 10.04%, comparatively 9.4% higher than that of devices using sol-gel (SG) ZnO as ETL. We are optimistic that this interface passivation strategy has great potential in the development of solution-processed CQD optoelectronic devices.

Cation-Exchange Enables In Situ Preparation of PbSe Quantum Dot Ink for High Performance Solar Cells

Lead selenide (PbSe) colloidal quantum dots (CQDs) are promising candidates for optoelectronic applications. To date, PbSe CQDs capped by halide ligands exhibit improved stability and solar cells using these CQDs as active layers have reported a remarkable power conversion efficiency (PCE) up to 10%. However, PbSe CQDs are more prone to oxidation, requiring delicate control over their processability and compromising their applications. Herein, an efficient strategy that addresses this issue by an in situ cation-exchange process is reported. This is achieved by a two-phase ligand exchange process where PbI₂ serves as both a passivating ligand and cation-source inducing transformation of CdSe to PbSe. The defect density and carrier lifetime of PbSe CQD films are improved to 1.05 × 10¹⁶  cm^-3 and 12.2 ns, whereas the traditional PbSe CQD films possess 1.9 × 10¹⁶  cm^-3 defect density and 10.2 ns carrier lifetime. These improvements are translated into an enhancement of photovoltaic performance of PbSe solar cells, with a PCE of up to 11.6%, ≈10% higher than the previous record. Notably, the approach enables greatly improved stability and a two-month stability is successfully demonstrated. This strategy is expected to promote the fast development of PbSe CQD applications in low-cost and high-performance optoelectronic devices.

Dye-Sensitized Multiple Exciton Generation in Lead Sulfide Quantum Dots

Multiple exciton generation (MEG), the generation of multiple excitons from the absorption of a single high-energy photon, is a strategy to go beyond the limiting efficiencies that define current-day solar cells by harvesting some of the thermalization energy losses that occur when photons with an energy greater than the semiconductor bandgap are absorbed. In this work, we show that organic dyes can sensitize MEG in semiconductor quantum dots (QDs). In particular, we found that surface-anchored pyrene ligands enhanced the photon-to-charge carrier quantum yield of PbS QDs from 113 ± 3% to 183 ± 7% when the photon energy was 3.9 times the band gap. A wavelength dependence study shows that the enhancement is positively correlated with the pyrene absorptivity. Transient absorption and steady-state photoluminescence measurements suggest that the MEG sensitization is based on an initial fast electron transfer from the pyrene ligands to the PbS QDs producing hot-electrons in the QDs that subsequently undergo MEG. This work demonstrates that hybrid and synergistic organic/inorganic interactions can be a successful strategy to enhance MEG.

Open-Circuit Voltage Loss in Lead Chalcogenide Quantum Dot Solar Cells

Lead chalcogenide colloidal quantum dot solar cells (CQDSCs) have received considerable attention due to their broad and tunable absorption and high stability. Presently, lead chalcogenide CQDSC has achieved a power conversion efficiency of ≈14%. However, the state-of-the-art lead chalcogenide CQDSC still has an open-circuit voltage (V_oc ) loss of ≈0.45 V, which is significantly higher than those of c-Si and perovskite solar cells. Such high V_oc loss severely limits the performance improvement and commercialization of lead chalcogenide CQDSCs. In this review, the V_oc loss is first analyzed via detailed balance theory and the origin of V_oc loss from both solar absorber and interface is summarized. Subsequently, various strategies for improving the V_oc from the solar absorber, including the passivation strategies during the synthesis and ligand exchange are overviewed. The great impact of the ligand exchange process on CQD passivation is highlighted and the corresponding strategies to further reduce the V_oc loss are summarized. Finally, various strategies are discussed to reduce interface V_oc loss from charge transport layers. More importantly, the great potential of achieving performance breakthroughs via various organic hole transport layers is highlighted and the existing challenges toward commercialization are discussed.

Aspect ratio dependent air stability of PbSe nanorods and photovoltaic applications

Development of unique strategies to overcome Shockley–Queisser (SQ) limit in solar cells has gained a great deal of interest. Multiple exciton generation (MEG) process has been considered as one of the best approaches to the SQ limitation. In this respect, PbSe quantum dots (QDs) and nanorods (NRs) have been regarded as promising solar energy harvesting materials owing to their noticeable MEG yields. Although air stability has been regarded as one of the main disadvantage of PbSe QDs, no study has pointed out to the air sensitivity of PbSe NRs yet. Here, we reveal the effect of aspect ratio on air sensitivity and optical properties of PbSe NRs and discover that NRs with higher aspect ratios are more air stable, attributed to the reduced density of NR ends with air sensitive {100} facets. Furthermore, a band offset was created by utilization of tetrabutylammonium iodide and 1,2-ethanedithiol ligands in cell designs. We found that solar cells based on pristine PbSe NRs are limited by low open circuit voltages due to leakage current pathways. On the other hand, modified cells comprising light absorbing layers prepared by blending NRs and QDs and hole transporting QD layer exhibit a 10-fold improvement in solar cell efficiency.

Unconventional singlet fission materials

Singlet fission (SF) is a photophysical downconversion pathway, in which a singlet excitation transforms into two triplet excited states. As such, it constitutes an exciton multiplication generation process, which is currently at the focal point for future integration into solar energy conversion devices. Beyond this, various other exciting applications were proposed, including quantum cryptography or organic light emitting diodes. Also, the mechanistic understanding evolved rapidly during the last year. Unfortunately, the number of suitable SF-chromophores is still limited. This is per se problematic, considering the wide range of envisaged applicability. With that in mind, we emphasize uncommon SF-scaffolds and outline requirements as well as strategies to expand the chromophore pool of SF-materials.

Using Interaction of Nano Dipoles to Control the Growth of Nanorods

Charged facets of a nanocrystal can form an intrinsic nanometer-size electric dipole. When the spacing between these nano dipoles is adjusted, the dipolar interaction energy is tuned from a fraction to a multiple of the thermal energy. Consequently, the one-dimensional oriented attachment can be switched on or off, as is the growth of nanorods. This kinetically controlled growth is achieved at relatively low reaction temperatures while the thermodynamically controlled growth dominates at higher temperatures. The synthesized PbSe nanorods are branchless, exhibiting a single-exponential photoluminescence decay trace with an e-folding lifetime of 1.3 μs and a photoluminescence quantum yield of 35%.

Exciton-Photon Interactions in Semiconductor Nanocrystals: Radiative Transitions, Non-Radiative Processes and Environment Effects

In this review, we discuss several fundamental processes taking place in semiconductor nanocrystals (quantum dots (QDs)) when their electron subsystem interacts with electromagnetic (EM) radiation. The physical phenomena of light emission and EM energy transfer from a QD exciton to other electronic systems such as neighbouring nanocrystals and polarisable 3D (semi-infinite dielectric or metal) and 2D (graphene) materials are considered. In particular, emission decay and FRET rates near a plane interface between two dielectrics or a dielectric and a metal are discussed and their dependence upon relevant parameters is demonstrated. The cases of direct (II–VI) and indirect (silicon) band gap semiconductors are compared. We cover the relevant non-radiative mechanisms such as the Auger process, electron capture on dangling bonds and interaction with phonons. Some further effects, such as multiple exciton generation, are also discussed. The emphasis is on explaining the underlying physics and illustrating it with calculated and experimental results in a comprehensive, tutorial manner.

Numerical Analysis of the Detailed Balance of Multiple Exciton Generation Solar Cells with Nonradiative Recombination

In this study, we analyzed the nonradiative recombination impact of multiple exciton generation solar cells (MEGSCs) with a revised detailed balance (DB) limit. The nonideal quantum yield (QY) of a material depends on the surface defects or the status of the material. Thus, its QY shape deviates from the ideal QY because of carrier losses. We used the ideal reverse saturation current variation in the DB of MEGSCs to explain the impact of nonradiative recombination. We compared ideal and nonideal QYs with the nonradiative recombination into the DB of MEGSCs under one-sun and full-light concentration. Through this research, we seek to develop a strategy to maintain MEGSC performance.

Efficient Carrier Multiplication in Low Band Gap Mixed Sn/Pb Halide Perovskites

Carrier multiplication (CM) generates multiple electron-hole pairs in a semiconductor from a single absorbed photon with energy exceeding twice the band gap. Thus, CM provides a promising way to circumvent the Shockley-Queisser limit of solar cells. The ideal material for CM should have significant overlap with the solar spectrum and should be able to fully utilize the excess energy above the band gap for additional charge carrier generation. We report efficient CM in mixed Sn/Pb halide perovskites (band gap of 1.28 eV) with onset just above twice the band gap. The CM rate outcompetes the carrier cooling process leading to efficient CM with a quantum yield of 2 for photoexcitation at 2.8 times the band gap. Such efficient CM characteristics add to the many advantageous properties of mixed Sn/Pb metal halide perovskites for photovoltaic applications.

Solution and Solid-State Characterization of PbSe Precursors

The addition of lead to diphenyl diselenide in ethylenediamine (en) or pyridine (py) allowed for the observation of the solvento complexes, (en)Pb(SePh)₂ or (py)₂Pb(SePh)₂, respectively. Performing this reaction in dimethyl sulfoxide and subsequent crystallization was found to afford Pb(SePh)₂. Inductively coupled plasma optical emission spectroscopy revealed a 1:2 lead to selenium ratio for all three complexes. Nuclear magnetic resonance spectroscopy confirms that Pb(SePh)₂ is readily solubilized by ethylenediamine, and electrospray ionization mass spectrometry supports the presence of Pb(SePh)₂ moieties in solution. Single-crystal X-ray diffraction analysis of the pyridine adduct, (py)₂Pb(SePh)₂, revealed a seesaw molecular geometry featuring equatorial phenylselenolate ligands. Crystals of Pb(SePh)₂ grown from dimethyl sulfoxide revealed one-dimensional polymeric chains of Pb(SePh)₂. We believe that the lead(II) phenylselenolate complexes form via an oxidative addition reaction.

Extremely Efficient Photocurrent Generation in Carbon Nanotube Photodiodes Enabled by a Strong Axial Electric Field

Carbon nanotube (CNT) photodiodes have the potential to convert light into electrical current with high efficiency. However, previous experiments have revealed the photocurrent quantum yield (PCQY) to be well below 100%. In this work, we show that the axial electric field increases the PCQY of CNT photodiodes. Under optimal conditions, our data suggest PCQY > 100%. We studied, both experimentally and theoretically, CNT photodiodes at room temperature using optical excitation corresponding to the S₂₂, S₃₃, and S₄₄ exciton resonances. The axial electric field inside the pn junction was controlled using split gates that are capacitively coupled to the suspended CNT. Our results give new insight into the photocurrent generation pathways in CNTs and the field dependence and diameter dependence of PCQY.

Efficient light harvesting in hybrid quantum dot-interdigitated back contact solar cells via resonant energy transfer and luminescent downshifting

In this paper, we propose a hybrid quantum dot (QD)/solar cell configuration to improve performance of interdigitated back contact (IBC) silicon solar cells, resulting in 39.5% relative boost in the short-circuit current (J_SC) through efficient utilisation of resonant energy transfer (RET) and luminescent downshifting (LDS). A uniform layer of CdSe_1-xS_x/ZnS quantum dots is deposited onto the AlO_x surface passivation layer of the IBC solar cell. QD hybridization is found to cause a broadband improvement in the solar cell external quantum efficiency. Enhancement over the QD absorption wavelength range is shown to result from LDS. This is confirmed by significant boosts in the solar cell internal quantum efficiency (IQE) due to the presence of QDs. Enhancement over the red and near-infrared spectral range is shown to result from the anti-reflection properties of the QD layer coating. A study on the effect of QD layer thickness on solar cell performance was performed and an optimised QD layer thickness was determined. Time-resolved photoluminescence (TRPL) spectroscopy was used to investigate the photoluminescence dynamics of the QD layer as a function of AlO_x spacer layer thickness. RET can be evoked between the QD and Si layers for very thin AlO_x spacer layers, with RET efficiencies of up to 15%. In the conventional LDS architecture, down-converters are deposited on the surface of an optimised anti-reflection layer, providing relatively narrowband enhancement, whereas the QDs in our hybrid architecture provide optical enhancement over the broadband wavelength range, by simultaneously utilising LDS, RET-mediated carrier injection, and antireflection effects, resulting in up to 40% improvement in the power conversion efficiency (PCE). Low-cost synthesis of QDs and simple device integration provide a cost-effective solution for boosting solar cell performance.

Hybrid Oleate-Iodide Ligand Shell for Air-Stable PbSe Nanocrystals and Superstructures

A postsynthetic treatment is presented to improve the air stability of PbSe nanocrystals (NCs) and PbSe square superstructures. The addition of z-type Pb(oleate)₂ ligands together with x-type iodide ligands creates a hybrid ligand shell containing both ligands. The air stability of the PbSe NCs is checked by enduring absorption spectroscopy under ambient conditions. With a combined NaI + Pb(oleate)₂ treatment, the absorption spectrum remains unchanged for several days under ambient conditions. Fourier transform infrared spectroscopy shows that the surface coordination of the oleate ligands changes by the chemical treatment: from mixed chelating bidentate + bridging to Pb for the pristine nanocrystals to almost exclusive chelating bidentate coordination after chemical passivation. The shift of the C-H stretching vibration shows that the oleate hydrocarbon layer is in a more liquidlike state after the chemical treatment, suggesting that oleate and iodide ligands are often present on adjacent surface positions.

Lead Selenide (PbSe) Colloidal Quantum Dot Solar Cells with >10% Efficiency

Low-cost solution-processed lead chalcogenide colloidal quantum dots (CQDs) have garnered great attention in photovoltaic (PV) applications. In particular, lead selenide (PbSe) CQDs are regarded as attractive active absorbers in solar cells due to their high multiple-exciton generation and large exciton Bohr radius. However, their low air stability and occurrence of traps/defects during film formation restrict their further development. Air-stable PbSe CQDs are first synthesized through a cation exchange technique, followed by a solution-phase ligand exchange approach, and finally absorber films are prepared using a one-step spin-coating method. The best PV device fabricated using PbSe CQD inks exhibits a reproducible power conversion efficiency of 10.68%, 16% higher than the previous efficiency record (9.2%). Moreover, the device displays remarkably 40-day storage and 8 h illuminating stability. This novel strategy could provide an alternative route toward the use of PbSe CQDs in low-cost and high-performance infrared optoelectronic devices, such as infrared photodetectors and multijunction solar cells.

Efficient Type-II Heterojunction Nanorod Sensitized Solar Cells Realized by Controlled Synthesis of Core/Patchy-Shell Structure and CdS Cosensitization

Here, we report the successful application of core/patchy-shell CdSe/CdSe _xTe_{1- x} type-II heterojunction nanorods (HNRs) to realize efficient sensitized solar cells. The core/patchy-shell structure designed to have a large type-II heterointerface without completely shielding the CdSe core significantly improves photovoltaic performance compared to other HNRs with minimal or full-coverage shells. In addition, cosensitization with CdS grown by successive ionic layer adsorption and reaction further improves the power conversion efficiency. One-diode model analysis reveals that the HNRs having exposed CdSe cores and suitably grown CdS result in significant reduction of series resistance. Investigation of the intercorrelation between diode quality parameters, diode saturation current density ( J₀) and recombination order (β = (ideality factor)^-1) reveals that HNRs with open CdSe cores exhibit reduced recombination. These results confirm that the superior performance of core/patchy-shell HNRs results from their fine-tuned structure: photocurrent is increased by the large type-II heterointerface and recombination is effectively suppressed due to the open CdSe core enabling facile electron extraction. An optimized power conversion efficiency of 5.47% (5.89% with modified electrode configuration) is reported, which is unmatched among photovoltaics utilizing anisotropic colloidal heterostructures as light-harvesting materials.

Photoinduced photoluminescence enhancement in self-assembled clusters of formamidinium lead bromide perovskite nanocrystals

Nanocrystals of formamidinium lead bromide perovskite (FAPbBr3) self-assemble into clusters in powder and film samples and provide a prolonged photoluminescence lifetime, which is attributed to the diffusion of charge carriers through interparticle states formed among nanocrystals. Interestingly, the photoluminescence lifetime decreases and the emission intensity increases for the clusters, which is with the increase in the intensity of excitation light. By doping the nanocrystal clusters with C60, we successfully harvested the photogenerated charge carriers. Nonetheless, at high intensities of excitation, the rate of radiative recombination becomes comparable to that of the electron transfer to C60. Thus, the optimum rate of electron transfer to C60 is accomplished by minimally exciting the self-assembled nanocrystals.

Photosensitization of Single-Crystal Oxide Substrates with Quantum Confined Semiconductors

Dye-sensitized solar cells have been studied for many years as a potential inexpensive and scalable alternative to silicon solar cells. They have recently expanded their list of photosensitizers to include quantum dots. In recent years, there has been substantial progress in the field of quantum dot solar cells, with certified efficiencies now reaching 13.4%. Fundamental studies on nanomaterial/semiconductor electrode coupling have led to a deeper understanding of photoinduced electron-transfer processes that are important for both of these devices. This Feature Article will highlight the use of a model system, nanomaterials sensitizing single-crystal oxide substrates, that is useful for investigating how changes in nanomaterial shape, dimensionality, size, and local environment affect the photoinduced charge separation efficiency.

Perovskite-a Perfect Top Cell for Tandem Devices to Break the S-Q Limit

Up to now, multijunction cell design is the only successful way demonstrated to overcome the Shockley-Quiesser limit for single solar cells. Perovskite materials have been attracting ever-increasing attention owing to their large absorption coefficient, tunable bandgap, low cost, and easy fabrication process. With their rapidly increased power conversion efficiency, organic-inorganic metal halide perovskite-based solar cells have demonstrated themselves as the most promising candidates for next-generation photovoltaic applications. In fact, it is a dream come true for researchers to finally find a perfect top-cell candidate in tandem device design in commercially developed solar cells like single-crystalline silicon and CIGS cells used as the bottom component cells. Here, the recent progress of multijunction solar cells is reviewed, including perovskite/silicon, perovskite/CIGS, perovskite/perovskite, and perovskite/polymer multijunction cells. In addition, some perspectives on using these solar cells in emerging markets such as in portable devices, Internet of Things, etc., as well as an outlook for perovskite-based multijunction solar cells are discussed.

Infrared Quantum Dots: Progress, Challenges, and Opportunities

Infrared technologies provide tremendous value to our modern-day society. The need for easy-to-fabricate, solution-processable, tunable infrared active optoelectronic materials has driven the development of infrared colloidal quantum dots, whose band gaps can readily be tuned by dimensional constraints due to the quantum confinement effect. In this Perspective, we summarize recent progress in the development of infrared quantum dots both as infrared light emitters ( e.g., in light-emitting diodes, biological imaging, etc.) as well as infrared absorbers ( e.g., in photovoltaics, solar fuels, photon up-conversion, etc.), focusing on how fundamental breakthroughs in synthesis, surface chemistry, and characterization techniques are facilitating the implementation of these nanostructures into exploratory device architectures as well as in emerging applications. We discuss the ongoing challenges and opportunities associated with infrared colloidal quantum dots.

Model To Determine a Distinct Rate Constant for Carrier Multiplication from Experiments

Carrier multiplication (CM) is the process in which multiple electron-hole pairs are created upon absorption of a single photon in a semiconductor. CM by an initially hot charge carrier occurs in competition with cooling by phonon emission, with the respective rates determining the CM efficiency. Up until now, CM rates have only been calculated theoretically. We show for the first time how to extract a distinct CM rate constant from experimental data of the relaxation time of hot charge carriers and the yield of CM. We illustrate this method for PbSe quantum dots. Additionally, we provide a simplified method using an estimated energy loss rate to estimate the CM rate constant just above the onset of CM, when detailed experimental data of the relaxation time is missing.

Enhanced Multiple Exciton Generation in PbS|CdS Janus-like Heterostructured Nanocrystals

Generating multiple excitons by a single high-energy photon is a promising third-generation solar energy conversion strategy. We demonstrate that multiple exciton generation (MEG) in PbS|CdS Janus-like heteronanostructures is enhanced over that of single-component and core/shell nanocrystal architectures, with an onset close to two times the PbS band gap. We attribute the enhanced MEG to the asymmetric nature of the heteronanostructure that results in an increase in the effective Coulomb interaction that drives MEG and a reduction of the competing hot exciton cooling rate. Slowed cooling occurs through effective trapping of hot-holes by a manifold of valence band interfacial states having both PbS and CdS character, as evidenced by photoluminescence studies and ab initio calculations. Using transient photocurrent spectroscopy, we find that the MEG characteristics of the individual nanostructures are maintained in conductive arrays and demonstrate that these quasi-spherical PbS|CdS nanocrystals can be incorporated as the main absorber layer in functional solid-state solar cell architectures. Finally, based upon our analysis, we provide design rules for the next generation of engineered nanocrystals to further improve the MEG characteristics.

Quantum Dot Solar Cells: Small Beginnings Have Large Impacts

From a niche field over 30 years ago, quantum dots (QDs) have developed into viable materials for many commercial optoelectronic devices. We discuss the advancements in Pb-based QD solar cells (QDSCs) from a viewpoint of the pathways an excited state can take when relaxing back to the ground state. Systematically understanding the fundamental processes occurring in QDs has led to improvements in solar cell efficiency from ~3% to over 13% in 8 years. We compile data from ~200 articles reporting functioning QDSCs to give an overview of the current limitations in the technology. We find that the open circuit voltage limits the device efficiency and propose some strategies for overcoming this limitation.

Dynamics of Charge Transfer and Multiple Exciton Generation in the Doped Silicon Quantum Dot-Carbon Nanotube System: Density Functional Theory-Based Computation

We use the Boltzmann transport equation (BE) to study time evolution of a photoexcited state, including phonon-mediated exciton relaxation, multiple exciton generation (MEG), and energy-transfer processes. BE collision integrals are derived using Kadanoff-Baym-Keldysh many-body perturbation theory (MBPT) based on density functional theory (DFT) simulations, including exciton effects. We apply the method to a nanostructured p- n junction composed of a 1 nm hydrogen-terminated Si quantum dot (QD) doped with two phosphorus atoms (Si₃₆P₂H₄₂) adjacent to the (6, 2) single-wall carbon nanotube (CNT) with two chlorine atoms per two unit cells adsorbed to the surface. We find that an initial excitation localized on either the QD or CNT evolves into a transient charge-transfer (CT) state where either electron or hole transfer has taken place. The CT state lifetime is about 40 fs. Also, we study MEG in this system by computing internal quantum efficiency (QE), which is the number of excitons generated from an absorbed photon during relaxation. We predict efficient MEG starting at 3 E_g ≃ 1.5 eV and with QE reaching QE = 1.65 at about 5 E_g, where E_g ≃ 0.5 eV is the lowest exciton energy, i.e., the gap. However, we find that including energy transfer and MEG effects suppresses CT state generation.

Tuning the Intrinsic Properties of Carbon Nitride for High Quantum Yield Photocatalytic Hydrogen Production

The low quantum yield of photocatalytic hydrogen production in carbon nitride (CN) has been improved upon via the modulation of both the extrinsic and intrinsic properties of the material. Although the modification of extrinsic properties has been widely investigated in the past, recently there has been growing interest in the alteration of intrinsic properties. Refining the intrinsic properties of CN provides flexibility in controlling the charge transport and selectivity in photoredox reactions, and therefore makes available a pathway toward superior photocatalytic performance. An analysis of recent progress in tuning the intrinsic photophysical properties of CN facilitates an assessment of the goals, achievements, and gaps. This article is intended to serve this purpose. Therefore, selected techniques and mechanisms of the tuning of intrinsic properties of CN are critically discussed here. This article concludes with a recommendation of the issues that need to be considered for the further enhancement in the quantum efficiency of CN photocatalysts.

GaAs Nanowires Grown by Catalyst Epitaxy for High Performance Photovoltaics

Photovoltaics (PVs) based on nanostructured III/V semiconductors can potentially reduce the material usage and increase the light-to-electricity conversion efficiency, which are anticipated to make a significant impact on the next-generation solar cells. In particular, GaAs nanowire (NW) is one of the most promising III/V nanomaterials for PVs due to its ideal bandgap and excellent light absorption efficiency. In order to achieve large-scale practical PV applications, further controllability in the NW growth and device fabrication is still needed for the efficiency improvement. This article reviews the recent development in GaAs NW-based PVs with an emphasis on cost-effectively synthesis of GaAs NWs, device design and corresponding performance measurement. We first discuss the available manipulated growth methods of GaAs NWs, such as the catalytic vapor-liquid-solid (VLS) and vapor-solid-solid (VSS) epitaxial growth, followed by the catalyst-controlled engineering process, and typical crystal structure and orientation of resulted NWs. The structure-property relationships are also discussed for achieving the optimal PV performance. At the same time, important device issues are as well summarized, including the light absorption, tunnel junctions and contact configuration. Towards the end, we survey the reported performance data and make some remarks on the challenges for current nanostructured PVs. These results not only lay the ground to considerably achieve the higher efficiencies in GaAs NW-based PVs but also open up great opportunities for the future low-cost smart solar energy harvesting devices.

Lead Selenide Colloidal Quantum Dot Solar Cells Achieving High Open-Circuit Voltage with One-Step Deposition Strategy

Lead selenide (PbSe) colloidal quantum dots (CQDs) are considered to be a strong candidate for high-efficiency colloidal quantum dot solar cells (CQDSCs) due to its efficient multiple exciton generation. However, currently, even the best PbSe CQDSCs can only display open-circuit voltage ( V_oc) about 0.530 V. Here, we introduce a solution-phase ligand exchange method to prepare PbI₂-capped PbSe (PbSe-PbI₂) CQD inks, and for the first time, the absorber layer of PbSe CQDSCs was deposited in one step by using this PbSe-PbI₂ CQD inks. One-step-deposited PbSe CQDs absorber layer exhibits fast charge transfer rate, reduced energy funneling, and low trap assisted recombination. The champion large-area (active area is 0.35 cm²) PbSe CQDSCs fabricated with one-step PbSe CQDs achieve a power conversion efficiency (PCE) of 6.0% and a V_oc of 0.616 V, which is the highest V_oc among PbSe CQDSCs reported to date.

Efficient Steplike Carrier Multiplication in Percolative Networks of Epitaxially Connected PbSe Nanocrystals

Carrier multiplication (CM) is a process in which a single photon excites two or more electrons. CM is of interest to enhance the efficiency of a solar cell. Until now, CM in thin films and solar cells of semiconductor nanocrystals (NCs) has been found at photon energies well above the minimum required energy of twice the band gap. The high threshold of CM strongly limits the benefits for solar cell applications. We show that CM is more efficient in a percolative network of directly connected PbSe NCs. The CM threshold is at twice the band gap and increases in a steplike fashion with photon energy. A lower CM efficiency is found for a solid of weaker coupled NCs. This demonstrates that the coupling between NCs strongly affects the CM efficiency. According to device simulations, the measured CM efficiency would significantly enhance the power conversion efficiency of a solar cell.

Multiple Exciton Generation in Nanostructures for Advanced Photovoltaic Cells

This paper reviews both experimental and theoretical work on nanostructures showing high quantum yields due to the phenomenon of multiple exciton generation. It outlines the aims and barriers to progress in identifying further such nanostructures and also includes important developments concerning solar devices where nanostructures act as the light-absorbing component. It reports on both semiconductor and carbon structures, both monocomposite (of various dimensionalities) and heterogeneous. Finally, it looks at future directions that can be taken to push solar cell efficiency above the classic limit set by Shockley and Queisser in 1961.

A New Passivation Route Leading to Over 8% Efficient PbSe Quantum-Dot Solar Cells via Direct Ion Exchange with Perovskite Nanocrystals

Colloidal quantum dots (QDs) are promising candidate materials for photovoltaics (PV) owing to the tunable bandgap and low-cost solution processability. Lead selenide (PbSe) QDs are particularly attractive to PV applications due to the efficient multiple-exciton generation and carrier transportation. However, surface defects arising from the oxidation of the PbSe QDs have been the major limitation for their development in PV. Here, a new passivation method for chlorinated PbSe QDs via ion exchange with cesium lead halide (Br, I) perovskite nanocrystals is reported. The surface chloride ions on the as-synthesized QDs can be partially exchanged with bromide or iodide ions from the perovskite nanocrystals, hence forming a hybrid halide passivation. Consistent with the improved photoluminescence quantum yield, the champion PV device fabricated with these PbSe QDs achieves a PCE of 8.2%, compared to 7.3% of that fabricated with the untreated QDs. This new method also leads to devices with excellent air-stability, retaining at least 93% of their initial PCEs after being stored in ambient conditions for 57 d. This is considered as the first reported PbSe QD solar cell with a PCE of over 8% to date.

Route to Improving Photovoltaics Based on CdSe/CdSexTe1-x Type-II Heterojunction Nanorods: The Effect of Morphology and Cosensitization on Carrier Recombination and Transport

One-dimensionally elongated nanoparticles with type-II staggered band offset are of potential use as light-harvesting materials for photovoltaics, but only a limited attention has been given to elucidate the factors governing the cell performance obtainable from such materials. Herein, we describe a combined strategy to enhance charge collection from CdSe/CdSe_xTe_1-x type-II heterojunction nanorods (HNRs) utilized as light harvesters for sensitized solar cells. By integrating morphology- and composition-tuned type-II HNRs into solar cells, factors that yield interfaces favorable both for the electron injection into TiO₂ and hole transfer to electrolyte are examined. Furthermore, it is shown that a more efficient photovoltaic system results from cosensitization with CdS quantum dots (QDs) predeposited on a TiO₂ scaffold, which improves charge collection from HNRs. Electrochemical impedance spectroscopy (EIS) analysis suggests that such a synergistically enhanced system benefits from the decreased recombination within HNRs and facilitated charge transport through the cosensitized TiO₂ electrode, even with the activation of a recombination path presumably related to the photogenerated holes in CdS QDs.

Efficient Carrier Multiplication in Colloidal Silicon Nanorods

Auger recombination lifetimes, absorption cross sections, and the quantum yields of carrier multiplication (CM), or multiexciton generation (MEG), were determined for solvent-dispersed silicon (Si) nanorods using transient absorption spectroscopy (TAS). Nanorods with an average diameter of 7.5 nm and aspect ratios of 6.1, 19.3, and 33.2 were examined. Colloidal Si nanocrystals of similar diameters were also studied for comparison. The nanocrystals and nanorods were passivated with organic ligands by hydrosilylation to prevent surface oxidation and limit the effects of surface trapping of photoexcited carriers. All samples used in the study exhibited relatively efficient photoluminescence. The Auger lifetimes increased with nanorod length, and the nanorods exhibited higher CM quantum yield and efficiency than the nanocrystals with a similar band gap energy E_g. Beyond a critical length, the CM quantum yield decreases. Nanorods with the aspect ratio of 19.3 had the highest CM quantum yield of 1.6 ± 0.2 at 2.9E_g, which corresponded to a multiexciton yield that was twice as high as observed for the spherical nanocrystals.

Investigation of anti-solvent induced optical properties change of cesium lead bromide iodide mixed perovskite (CsPbBr3-xIx) quantum dots

Cesium lead halide (CsPbX₃, X=Cl, Br, I) perovskites are a new material system that has attracted a lot of research focus. Its tunable band gap and better thermal stability than organic lead halide perovskite give it the potential for applications in optoelectronic devices such as light-emitting diodes and solar cells. Here we have synthesized CsPbBr_3-xI_x perovskite quantum dots (QDs) via a solution process, and then have selected three different anti-solvents to purify the product. A significant effect on optical properties of CsPbBr_3-xI_x was found after the centrifugation process. Up to a ∼40nm shift was observed in mixed halide CsPbBr_3-xI_x QDs in both absorbance and PL spectra after purification while there was no obvious change in pure CsPbBr₃ when it was subjected to the same purification steps. XPS analysis shows that the Br:I ratio of the CsPbBr_3-xI_x QDs had changed as a result of exposure to the anti-solvent, causing the change of the band gap and shift of the spectra. It is also shown that iodine can be removed more easily than bromine during the anti-solvent purification. Ab-initio simulations of small CsPbBr_3-xI_x atomic clusters suggest that exposed Cs ions on Cs-terminated facets are the first species to be attacked by hydrophilic molecules, likely dragging halide ions into solution with them to maintain overall charge neutrality in the material. Charge carrier recombination rates were found to be unchanged and all samples maintained a good PL quantum yield which was more than 44%.

Non-Poissonian photon statistics from macroscopic photon cutting materials

In optical materials energy is usually extracted only from the lowest excited state, resulting in fundamental energy-efficiency limits such as the Shockley-Queisser limit for single-junction solar cells. Photon-cutting materials provide a way around such limits by absorbing high-energy photons and 'cutting' them into multiple low-energy excitations that can subsequently be extracted. The occurrence of photon cutting or quantum cutting has been demonstrated in a variety of materials, including semiconductor quantum dots, lanthanides and organic dyes. Here we show that photon cutting results in bunched photon emission on the timescale of the excited-state lifetime, even when observing a macroscopic number of optical centres. Our theoretical derivation matches well with experimental data on NaLaF₄:Pr³⁺, a material that can cut deep-ultraviolet photons into two visible photons. This signature of photon cutting can be used to identify and characterize new photon-cutting materials unambiguously.

Understanding chemically processed solar cells based on quantum dots

Photovoltaic energy conversion is one of the best alternatives to fossil fuel combustion. Petroleum resources are now close to depletion and their combustion is known to be responsible for the release of a considerable amount of greenhouse gases and carcinogenic airborne particles. Novel third-generation solar cells include a vast range of device designs and materials aiming to overcome the factors limiting the current technologies. Among them, quantum dot-based devices showed promising potential both as sensitizers and as colloidal nanoparticle films. A good example is the p-type PbS colloidal quantum dots (CQDs) forming a heterojunction with a n-type wide-band-gap semiconductor such as TiO2 or ZnO. The confinement in these nanostructures is also expected to result in marginal mechanisms, such as the collection of hot carriers and generation of multiple excitons, which would increase the theoretical conversion efficiency limit. Ultimately, this technology could also lead to the assembly of a tandem-type cell with CQD films absorbing in different regions of the solar spectrum.

Tandem Solar Cells from Solution-Processed CdTe and PbS Quantum Dots Using a ZnTe-ZnO Tunnel Junction

We developed a monolithic CdTe-PbS tandem solar cell architecture in which both the CdTe and PbS absorber layers are solution-processed from nanocrystal inks. Due to their tunable nature, PbS quantum dots (QDs), with a controllable band gap between 0.4 and ∼1.6 eV, are a promising candidate for a bottom absorber layer in tandem photovoltaics. In the detailed balance limit, the ideal configuration of a CdTe (E_g = 1.5 eV)-PbS tandem structure assumes infinite thickness of the absorber layers and requires the PbS band gap to be 0.75 eV to theoretically achieve a power conversion efficiency (PCE) of 45%. However, modeling shows that by allowing the thickness of the CdTe layer to vary, a tandem with efficiency over 40% is achievable using bottom cell band gaps ranging from 0.68 and 1.16 eV. In a first step toward developing this technology, we explore CdTe-PbS tandem devices by developing a ZnTe-ZnO tunnel junction, which appropriately combines the two subcells in series. We examine the basic characteristics of the solar cells as a function of layer thickness and bottom-cell band gap and demonstrate open-circuit voltages in excess of 1.1 V with matched short circuit current density of 10 mA/cm² in prototype devices.

Energy conversion approaches and materials for high-efficiency photovoltaics

The past five years have seen significant cost reductions in photovoltaics and a correspondingly strong increase in uptake, with photovoltaics now positioned to provide one of the lowest-cost options for future electricity generation. What is becoming clear as the industry develops is that area-related costs, such as costs of encapsulation and field-installation, are increasingly important components of the total costs of photovoltaic electricity generation, with this trend expected to continue. Improved energy-conversion efficiency directly reduces such costs, with increased manufacturing volume likely to drive down the additional costs associated with implementing higher efficiencies. This suggests the industry will evolve beyond the standard single-junction solar cells that currently dominate commercial production, where energy-conversion efficiencies are fundamentally constrained by Shockley-Queisser limits to practical values below 30%. This Review assesses the overall prospects for a range of approaches that can potentially exceed these limits, based on ultimate efficiency prospects, material requirements and developmental outlook.

Recent Progress Towards Quantum Dot Solar Cells with Enhanced Optical Absorption

Quantum dot solar cells, as a promising candidate for the next generation solar cell technology, have received tremendous attention in the last 10 years. Some recent developments in epitaxy growth and device structures have opened up new avenues for practical quantum dot solar cells. Unfortunately, the performance of quantum dot solar cells is often plagued by marginal photon absorption. In this review, we focus on the recent progress made in enhancing optical absorption in quantum dot solar cells, including optimization of quantum dot growth, improving the solar cells structure, and engineering light trapping techniques.

Cation Exchange Combined with Kirkendall Effect in the Preparation of SnTe/CdTe and CdTe/SnTe Core/Shell Nanocrystals

Controlling the synthesis of narrow band gap semiconductor nanocrystals (NCs) with a high-quality surface is of prime importance for scientific and technological interests. This Letter presents facile solution-phase syntheses of SnTe NCs and their corresponding core/shell heterostructures. Here, we synthesized monodisperse and highly crystalline SnTe NCs by employing an inexpensive, nontoxic precursor, SnCl2, the reactivity of which was enhanced by adding a reducing agent, 1,2-hexadecanediol. Moreover, we developed a synthesis procedure for the formation of SnTe-based core/shell NCs by combining the cation exchange and the Kirkendall effect. The cation exchange of Sn(2+) by Cd(2+) at the surface allowed primarily the formation of SnTe/CdTe core/shell NCs. Further continuation of the reaction promoted an intensive diffusion of the Cd(2+) ions, which via the Kirkendall effect led to the formation of the inverted CdTe/SnTe core/shell NCs.

Integrating an electrically active colloidal quantum dot photodiode with a graphene phototransistor

The realization of low-cost photodetectors with high sensitivity, high quantum efficiency, high gain and fast photoresponse in the visible and short-wave infrared remains one of the challenges in optoelectronics. Two classes of photodetectors that have been developed are photodiodes and phototransistors, each of them with specific drawbacks. Here we merge both types into a hybrid photodetector device by integrating a colloidal quantum dot photodiode atop a graphene phototransistor. Our hybrid detector overcomes the limitations of a phototransistor in terms of speed, quantum efficiency and linear dynamic range. We report quantum efficiencies in excess of 70%, gain of 10⁵ and linear dynamic range of 110 dB and 3 dB bandwidth of 1.5 kHz. This constitutes a demonstration of an optoelectronically active device integrated directly atop graphene and paves the way towards a generation of flexible highly performing hybrid two-dimensional (2D)/0D optoelectronics.

The combination of fast photo-response and high gain plays a pivotal role in photodetector devices. Here the authors combine a colloidal quantum dot photodiode with a graphene phototransistor to overcome the speed, quantum efficiency and linear dynamic range limitations of available phototransistors.

PbSe quantum dot films with enhanced electron mobility employed in hybrid polymer/nanocrystal solar cells

We explore two strategies to improve the performance of hybrid solar cells fabricated using poly(3-hexylthiophene) (P3HT) and colloidal PbSe nanocrystals, which have reached a 1 sun power conversion efficiency of 2.9%.

Hot exciton cooling and multiple exciton generation in PbSe quantum dots

PbSe QDs show high multiple exciton generation (MEG) quantum yield. Here we have investigated the role of theΣtransition in slowing down the hot exciton cooling, which can help MEG to take over phonon relaxation.

Lead Telluride Quantum Dot Solar Cells Displaying External Quantum Efficiencies Exceeding 120%

Multiple exciton generation (MEG) in semiconducting quantum dots is a process that produces multiple charge-carrier pairs from a single excitation. MEG is a possible route to bypass the Shockley-Queisser limit in single-junction solar cells but it remains challenging to harvest charge-carrier pairs generated by MEG in working photovoltaic devices. Initial yields of additional carrier pairs may be reduced due to ultrafast intraband relaxation processes that compete with MEG at early times. Quantum dots of materials that display reduced carrier cooling rates (e.g., PbTe) are therefore promising candidates to increase the impact of MEG in photovoltaic devices. Here we demonstrate PbTe quantum dot-based solar cells, which produce extractable charge carrier pairs with an external quantum efficiency above 120%, and we estimate an internal quantum efficiency exceeding 150%. Resolving the charge carrier kinetics on the ultrafast time scale with pump-probe transient absorption and pump-push-photocurrent measurements, we identify a delayed cooling effect above the threshold energy for MEG.

Size and Energy Level Tuning of Quantum Dot Solids via a Hybrid Ligand Complex

The performance of quantum dots (QDs) in optoelectronic devices suffers as a result of sub-bandgap states induced by the large fraction of atoms on the surface of QDs. Recent progress in passivating these surface states with thiol ligands and halide ions has led to competitive efficiencies. Here, we apply a hybrid ligand mixture to passivate PbSe QD sub-bandgap tail states via a low-temperature, solid-state ligand exchange. We show that this ligand mixture allows tuning of the energy levels and the physical QD size in the solid state during film formation. We hereby present a novel, postsynthetic path to tune the properties of QD films.