1
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Tao A, Jiang Y, Chen S, Zhang Y, Cao Y, Yao T, Chen C, Ye H, Ma XL. Ferroelectric polarization and magnetic structure at domain walls in a multiferroic film. Nat Commun 2024; 15:6099. [PMID: 39030193 PMCID: PMC11271601 DOI: 10.1038/s41467-024-50431-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/10/2021] [Accepted: 07/10/2024] [Indexed: 07/21/2024] Open
Abstract
Domain walls affect significantly ferroelectric and magnetic properties of magnetoelectric multiferroics. The stereotype is that the ferroelectric polarization will reduce at the domain walls due to the incomplete shielding of depolarization field or the effects of gradient energy. By combining transmission electron microscopy and first-principles calculations, we demonstrate that the ferroelectric polarization of tail-to-tail 180° domain walls in ε-Fe2O3 is regulated by the bound charge density. A huge enhancement (43%) of ferroelectric polarization is observed in the type I domain wall with a low bound charge density, while the ferroelectric polarization is reduced to almost zero at the type II domain wall with a high bound charge density. The magnetic coupling across the type I and type II ferroelectric domain walls are antiferromagnetic and ferromagnetic, respectively. Revealing mechanisms for enhancing ferroelectric polarization and magnetic behaviors at ferroelectric domain walls may promote the fundamental research and potential applications of magnetoelectric multiferroics.
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Affiliation(s)
- Ang Tao
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016, Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, 110016, Shenyang, China
- Jihua Lab, 528251, Foshan, China
| | - Yixiao Jiang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016, Shenyang, China
- Jihua Lab, 528251, Foshan, China
| | - Shanshan Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016, Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, 110016, Shenyang, China
- Jihua Lab, 528251, Foshan, China
| | - Yuqiao Zhang
- Institute of Quantum and Sustainable Technology (IQST), School of Chemistry and Chemical Engineering, Jiangsu University, 212013, Zhenjiang, Jiangsu, China
- Foshan (Southern China) Institute for New Materials, 528200, Foshan, Guangdong, China
| | - Yi Cao
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016, Shenyang, China
- School of Materials Science and Engineering, University of Science and Technology of China, 110016, Shenyang, China
| | - Tingting Yao
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016, Shenyang, China
- Jihua Lab, 528251, Foshan, China
| | - Chunlin Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016, Shenyang, China.
- Jihua Lab, 528251, Foshan, China.
| | | | - Xiu-Liang Ma
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016, Shenyang, China.
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, 523808, Dongguan, Guangdong, China.
- Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China.
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2
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Dwij V, De B, Kunwar HS, Rana S, Velpula P, Shukla DK, Gupta MK, Mittal R, Pal S, Briscoe J, Sathe VG. Optical Control of In-Plane Domain Configuration and Domain Wall Motion in Ferroelectric and Ferroelastic Materials. ACS APPLIED MATERIALS & INTERFACES 2024; 16:33752-33762. [PMID: 38902888 DOI: 10.1021/acsami.4c02901] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/22/2024]
Abstract
The sensitivity of ferroelectric domain walls to external stimuli makes them functional entities in nanoelectronic devices. Specifically, optically driven domain reconfiguration with in-plane polarization is advantageous and thus is highly sought. Here, we show the existence of in-plane polarized subdomains imitating a single domain state and reversible optical control of its domain wall movement in a single-crystal of ferroelectric BaTiO3. Similar optical control in the domain configuration of nonpolar ferroelastic material indicates that long-range ferroelectric polarization is not essential for the optical control of domain wall movement. Instead, flexoelectricity is found to be an essential ingredient for the optical control of the domain configuration, and hence, ferroelastic materials would be another possible candidate for nanoelectronic device applications.
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Affiliation(s)
- Vivek Dwij
- UGC-DAE Consortium for Scientific Research, Indore 452001, India
| | - Binoy De
- UGC-DAE Consortium for Scientific Research, Indore 452001, India
| | | | - Sumesh Rana
- UGC-DAE Consortium for Scientific Research, Indore 452001, India
| | - Praveen Velpula
- UGC-DAE Consortium for Scientific Research, Indore 452001, India
| | - Dinesh K Shukla
- UGC-DAE Consortium for Scientific Research, Indore 452001, India
| | - Mayanak Kumar Gupta
- Solid State Physics Division, Bhabha Atomic Research Center, Mumbai 400 085, India
- Homi Bhabha National Institute, Anushaktinagar, Mumbai 400094, India
| | - Ranjan Mittal
- Solid State Physics Division, Bhabha Atomic Research Center, Mumbai 400 085, India
- Homi Bhabha National Institute, Anushaktinagar, Mumbai 400094, India
| | - Subhajit Pal
- School of Engineering & Materials Science, Queen Mary University of London, London E1 4NS, United Kingdom
| | - Joe Briscoe
- School of Engineering & Materials Science, Queen Mary University of London, London E1 4NS, United Kingdom
| | - Vasant G Sathe
- UGC-DAE Consortium for Scientific Research, Indore 452001, India
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3
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Jiang H, Dai C, Shen B, Jiang J. High-Performance LiNbO 3 Domain Wall Memory Devices with Enhanced Selectivity via Optimized Metal-Semiconductor Contact. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:1031. [PMID: 38921907 PMCID: PMC11206281 DOI: 10.3390/nano14121031] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/11/2024] [Revised: 05/24/2024] [Accepted: 05/31/2024] [Indexed: 06/27/2024]
Abstract
Lithium niobate (LiNbO3) single-crystal nanodevices featuring elevated readout domain wall currents exhibit significant potential for integrated circuits in memory computing applications. Nevertheless, challenges stem from suboptimal electrode-LiNbO3 single crystal contact characteristics, which impact the stability of high currents within these devices. In this work, we concentrate on augmenting the domain wall current by refining the fabrication processes of domain wall random access memory (DWRAM). Each LiNbO3 domain wall nanodevice was fabricated using a self-aligned process. Device performance was significantly enhanced by introducing a 10 nm interlayer between the LiNbO3 and Cu electrodes. A comparative analysis of electrical properties was conducted on devices with interlayers made of chromium (Cr) and titanium (Ti), as well as devices without interlayers. After the introduction of the Ti interlayer, the device's coercive voltage demonstrated an 82% reduction, while the current density showed a remarkable 94-fold increase. A 100 nm sized device with the Ti interlayer underwent positive down-negative up pulse testing, demonstrating a writing time of 82 ns at 8 V and an erasing time of 12 μs at -9 V. These operating speeds are significantly faster than those of devices without interlayers. Moreover, the enhanced devices exhibited symmetrical domain switching hysteresis loops with retention times exceeding 106 s. Notably, the coercive voltage (Vc) dispersion remained narrow after more than 1000 switching cycles. At an elevated temperature of 400 K, the device's on/off ratio was maintained at 105. The device's embedded selector demonstrated an ultrahigh selectivity (>106) across various reading voltages. These results underscore the viability of high-density nanoscale integration of ferroelectric domain wall memory.
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Affiliation(s)
| | | | | | - Jun Jiang
- School of Microelectronics, Fudan University, Shanghai 200433, China; (H.J.); (C.D.); (B.S.)
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4
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Wu Y, Yang H, He Q, Jiang H, Chen W, Tan C, Zhang Y, Zheng Y. The Investigation of Neuromimetic Dynamics in Ferroelectrics via In Situ TEM. NANO LETTERS 2024. [PMID: 38825790 DOI: 10.1021/acs.nanolett.4c01626] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2024]
Abstract
The core task of neuromorphic devices is to effectively simulate the behavior of neurons and synapses. Based on the functionality of ferroelectric domains with the advantages of low power consumption and high-speed response, great progress has been made in realizing neuromimetic behaviors such as ferroelectric synaptic devices. However, the correlation between the ferroelectric domain dynamics and neuromimetic behavior remains unclear. Here, we reveal the correlation between domain/domain wall dynamics and neuromimetic behaviors from a microscopic perspective in real-time by using high temporal and spatial resolution in situ transmission electron microscopy. Furthermore, we propose utilizing ferroelectric microstructures for the simultaneous simulation of neuronal and synaptic plasticity, which is expected to improve the integration and performance of ferroelectric neuromorphic devices. We believe that this work to study neuromimetic behavior from the perspective of domain dynamics is instructive for the development of ferroelectric neuromorphic devices.
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Affiliation(s)
- Yiwei Wu
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
| | - Hui Yang
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
| | - Qian He
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
| | - He Jiang
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
| | - Weijin Chen
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
| | - Congbing Tan
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- Hunan Provincial Key Laboratory of Intelligent Sensors and Sensor Materials, School of Physics and Electronics, Hunan University of Science and Technology, Xiangtan 411201, People's Republic of China
| | - Yi Zhang
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
| | - Yue Zheng
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
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5
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Hussain S, Awan SU, Mumtaz A, Siddique R, Aftab M, Hasanain SK. Investigation of electronic, ferroelectric and local electrical conduction behavior of RF sputtered BiFeO 3thin films. NANOTECHNOLOGY 2024; 35:295704. [PMID: 38631335 DOI: 10.1088/1361-6528/ad3fc6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/28/2024] [Accepted: 04/17/2024] [Indexed: 04/19/2024]
Abstract
Most of the applied research on BiFeO3(BFO) focuses on magnetoelectric and spintronic applications. This calls for a detailed grasp of multiferroic and conduction properties. BFO thin films with (100) epitaxial growth has been deposited on a LaNiO3(LNO) buffered Pt/Ti/SiO2/Si(100) substrate using RF magnetron sputtering. The film formed at 15 mTorr, 570 °C, and with Ar/O24:1 had a reasonably high degree of (100)-preferential orientation, the least surface roughness, and a densely packed structure. We obtained ferroelectric loops with strong polarization (150μC cm-2). The leakage current density is as low as 10-2A cm-2at 100 kV cm-1, implying that space-charge-limited bulk conduction (SCLC) was the primary conduction channel for carriers within BFO films. Local electrical conduction behavior demonstrates that at lower voltages, the grain boundary dominates electrical conduction and is linked to the displacement of oxygen vacancies in the grain boundary under external electric fields. We hope that a deeper understanding of the conduction mechanism will help integrate BFO into viable technologies.
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Affiliation(s)
- Shahzad Hussain
- Magnetism Lab, Department of physics, COMSATS University, Islamabad 44000, Pakistan
- Department of Physics, Quaid-i-Azam University, Islamabad 45320, Pakistan
| | - Saif Ullah Awan
- Department of Electrical Engineering, NUST College of Electrical & Mechanical Engineering, National University of Sciences and Technology (NUST), Campus H-12, 44000 Islamabad, Pakistan
| | - Arif Mumtaz
- Department of Physics, Quaid-i-Azam University, Islamabad 45320, Pakistan
| | - Resham Siddique
- Magnetism Lab, Department of physics, COMSATS University, Islamabad 44000, Pakistan
| | - Muhammad Aftab
- Department of Physics, Quaid-i-Azam University, Islamabad 45320, Pakistan
- Department of Physics, Government Postgraduate College No. 1 Abbottabad, Pakistan
| | - S K Hasanain
- Department of Physics, Quaid-i-Azam University, Islamabad 45320, Pakistan
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6
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Li Y, Hu D, Sun J, Zhang W, Jiang A. Ferroelectric Domain Wall Delayer and Low-Dropout Regulator. ACS APPLIED MATERIALS & INTERFACES 2024; 16:19691-19698. [PMID: 38563689 DOI: 10.1021/acsami.3c18979] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/04/2024]
Abstract
A switching-type power converter providing an accurate and stable switching output voltage against line/load variations and power supply ripple is mostly complicated in system-on-chip power management integrated circuits (PMICs) within a limited occupation area. Here we fabricated domain wall (DW) nanodevices using an X-cut LiNbO3 thin film on silicon. The domain switching event occurs after a delay time predicted by Merz's law under the applied voltage. But the output current is irrespective of the applied voltage and can be adjusted by conducting wall width as well as input resistance in the circuit. The regulating currents appear repetitively across the volatile interfacial domains between the nanodevice and electrode under intermittently applied voltages. A wall-current-limited domain switching model is developed to explain the phenomenon. The multifunctional DW nanodevices with smaller occupation areas can serve as compact low-dropout regulators in PMICs, time-domain delayers in energy-efficient neural network systems, and on-chip electrostatic discharge protection besides nonvolatile memories and selectors.
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Affiliation(s)
- Yiming Li
- State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Di Hu
- State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Jie Sun
- State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Wendi Zhang
- State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Anquan Jiang
- State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai 200433, China
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai 200433, China
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7
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Li F, Cao Q, Wang X, Wang R. Nonlocal erasing and writing of ferroelectric domains using a femtosecond laser in lithium niobate. OPTICS LETTERS 2024; 49:1892-1895. [PMID: 38621032 DOI: 10.1364/ol.519935] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/25/2024] [Accepted: 03/18/2024] [Indexed: 04/17/2024]
Abstract
We experimentally demonstrate the highly-efficient nonlocal erasing and writing of ferroelectric domains using a femtosecond laser in lithium niobate. Based on the induction of a focused infrared femtosecond laser without any relative displacement or additional treatment, the original multiple ferroelectric domains can be either erased (erasing operation) or elongated (writing operation) simultaneously in the crystal, depending on the laser focusing depth and the laser pulse energy. In the erasing operation, the original multiple ferroelectric domains can be cleared completely by just one laser induction, while in the writing operation, the average length of the ferroelectric domains can be elongated up to 235 µm by three laser inductions. A model has been proposed in which a thermoelectric field and a space charge field are used cooperatively to successfully explain the mechanism of nonlocal erasing and writing. This method greatly improves the efficiency and flexibility of tailoring ferroelectric domain structures, paving the way to large-scale all-optical industrial production for nonlinear photonic crystals and nonvolatile ferroelectric domain wall memories.
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8
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Li M, Rieck J, Noheda B, Roerdink JBTM, Wilkinson MHF. Stripe noise removal in conductive atomic force microscopy. Sci Rep 2024; 14:3931. [PMID: 38365918 PMCID: PMC10873331 DOI: 10.1038/s41598-024-54094-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/22/2023] [Accepted: 02/08/2024] [Indexed: 02/18/2024] Open
Abstract
Conductive atomic force microscopy (c-AFM) can provide simultaneous maps of the topography and electrical current flow through materials with high spatial resolution and it is playing an increasingly important role in the characterization of novel materials that are being investigated for novel memory devices. However, noise in the form of stripe features often appear in c-AFM images, challenging the quantitative analysis of conduction or topographical information. To remove stripe noise without losing interesting information, as many as sixteen destriping methods are investigated in this paper, including three additional models that we propose based on the stripes characteristics, and thirteen state-of-the-art destriping methods. We have also designed a gradient stripe noise model and obtained a ground truth dataset consisting of 800 images, generated by rotating and cropping a clean image, and created a noisy image dataset by adding random intensities of simulated noise to the ground truth dataset. In addition to comparing the results of the stripe noise removal visually, we performed a quantitative image quality comparison using simulated datasets and 100 images with very different strengths of simulated noise. All results show that the Low-Rank Recovery method has the best performance and robustness for removing gradient stripe noise without losing useful information. Furthermore, a detailed performance comparison of Polynomial fitting and Low-Rank Recovery at different levels of real noise is presented.
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Affiliation(s)
- Mian Li
- Bernoulli Institute for Mathematics, Computer Science and Artificial Intelligence, University of Groningen, Groningen, The Netherlands.
| | - Jan Rieck
- Zernike Institute for Advanced Materials, University of Groningen, Groningen, The Netherlands
| | - Beatriz Noheda
- Zernike Institute for Advanced Materials, University of Groningen, Groningen, The Netherlands
| | - Jos B T M Roerdink
- Bernoulli Institute for Mathematics, Computer Science and Artificial Intelligence, University of Groningen, Groningen, The Netherlands
| | - Michael H F Wilkinson
- Bernoulli Institute for Mathematics, Computer Science and Artificial Intelligence, University of Groningen, Groningen, The Netherlands
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Zhang F, Wang Z, Liu L, Nie A, Li Y, Gong Y, Zhu W, Tao C. Atomic-scale manipulation of polar domain boundaries in monolayer ferroelectric In 2Se 3. Nat Commun 2024; 15:718. [PMID: 38267419 PMCID: PMC10808116 DOI: 10.1038/s41467-023-44642-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/05/2023] [Accepted: 12/26/2023] [Indexed: 01/26/2024] Open
Abstract
Domain boundaries have been intensively investigated in bulk ferroelectric materials and two-dimensional materials. Many methods such as electrical, mechanical and optical approaches have been utilized to probe and manipulate domain boundaries. So far most research focuses on the initial and final states of domain boundaries before and after manipulation, while the microscopic understanding of the evolution of domain boundaries remains elusive. In this paper, we report controllable manipulation of the domain boundaries in two-dimensional ferroelectric In2Se3 with atomic precision using scanning tunneling microscopy. We show that the movements of the domain boundaries can be driven by the electric field from a scanning tunneling microscope tip and proceed by the collective shifting of atoms at the domain boundaries. Our density functional theory calculations reveal the energy path and evolution of the domain boundary movement. The results provide deep insight into domain boundaries in two-dimensional ferroelectric materials and will inspire inventive applications of these materials.
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Affiliation(s)
- Fan Zhang
- Department of Physics, Virginia Tech, Blacksburg, VA, 24061, USA
- Department of Physics, University of Texas at Austin, Austin, TX, 78712, USA
| | - Zhe Wang
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, 230026, China
- Department of Physics, University of Science and Technology of China, Hefei, 230026, China
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Lixuan Liu
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
- Center for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, 066004, China
| | - Anmin Nie
- Center for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, 066004, China
| | - Yanxing Li
- Department of Physics, University of Texas at Austin, Austin, TX, 78712, USA
| | - Yongji Gong
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Wenguang Zhu
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, 230026, China.
- Department of Physics, University of Science and Technology of China, Hefei, 230026, China.
| | - Chenggang Tao
- Department of Physics, Virginia Tech, Blacksburg, VA, 24061, USA.
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37830, USA.
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10
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Hemme P, Philippe JC, Medeiros A, Alekhin A, Houver S, Gallais Y, Sacuto A, Forget A, Colson D, Mantri S, Xu B, Bellaiche L, Cazayous M. Tuning the Multiferroic Properties of BiFeO_{3} under Uniaxial Strain. PHYSICAL REVIEW LETTERS 2023; 131:116801. [PMID: 37774288 DOI: 10.1103/physrevlett.131.116801] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/28/2023] [Accepted: 08/15/2023] [Indexed: 10/01/2023]
Abstract
More than twenty years ago, multiferroic compounds combining in particular magnetism and ferroelectricity were rediscovered. Since then, BiFeO_{3} has emerged as the most outstanding multiferroic by combining at room temperature almost all the fundamental or applicative properties that may be desired: electroactive spin wave excitations called electromagnons, conductive domain walls, or a low band gap of interest for magnonic devices. All these properties have so far only been discontinuously strain engineered in thin films according to the lattice parameter imposed by the substrate. Here we explore the ferroelectricity and the dynamic magnetic response of BiFeO_{3} bulk under continuously tunable uniaxial strain. Using elasto-Raman spectroscopy, we show that the ferroelectric soft mode is strongly enhanced under tensile strain and driven by the volume preserving deformation at low strain. The magnonic response is entirely modified with low energy magnon modes being suppressed for tensile strain above pointing out a transition from a cycloid to an homogeneous magnetic state. Effective Hamiltonian calculations show that the ferroelectric and the antiferrodistortive modes compete in the tensile regime. In addition, the homogeneous antiferromagnetic state becomes more stable compared to the cycloidal state above a +2% tensile strain close to the experimental value. Finally, we reveal the ferroelectric and magnetic orders of BiFeO_{3} under uniaxial strain and how the tensile strain allows us to unlock and to modify in a differentiated way the polarization and the magnetic structure.
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Affiliation(s)
- P Hemme
- Laboratoire Matériaux et Phénomènes Quantiques, Université Paris Cité, CNRS, 10 rue Alice Domon et Léonie Duquet, 75205 Paris Cedex 13, France
- Synchrotron SOLEIL, L'Orme des Merisiers Saint-Aubin, BP 48, 91192 Gif-sur-Yvette, France
| | - J-C Philippe
- Laboratoire Matériaux et Phénomènes Quantiques, Université Paris Cité, CNRS, 10 rue Alice Domon et Léonie Duquet, 75205 Paris Cedex 13, France
- Laboratoire de Physique des Solides, CNRS, Université Paris-Saclay, 91405 Orsay, France
| | - A Medeiros
- Laboratoire Matériaux et Phénomènes Quantiques, Université Paris Cité, CNRS, 10 rue Alice Domon et Léonie Duquet, 75205 Paris Cedex 13, France
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120, Palaiseau, France
| | - A Alekhin
- Laboratoire Matériaux et Phénomènes Quantiques, Université Paris Cité, CNRS, 10 rue Alice Domon et Léonie Duquet, 75205 Paris Cedex 13, France
| | - S Houver
- Laboratoire Matériaux et Phénomènes Quantiques, Université Paris Cité, CNRS, 10 rue Alice Domon et Léonie Duquet, 75205 Paris Cedex 13, France
| | - Y Gallais
- Laboratoire Matériaux et Phénomènes Quantiques, Université Paris Cité, CNRS, 10 rue Alice Domon et Léonie Duquet, 75205 Paris Cedex 13, France
| | - A Sacuto
- Laboratoire Matériaux et Phénomènes Quantiques, Université Paris Cité, CNRS, 10 rue Alice Domon et Léonie Duquet, 75205 Paris Cedex 13, France
| | - A Forget
- Service de Physique de l'Etat Condensé, CEA Saclay, IRAMIS, SPEC (CNRS URA 2464), F-91191 Gif sur Yvette, France
| | - D Colson
- Service de Physique de l'Etat Condensé, CEA Saclay, IRAMIS, SPEC (CNRS URA 2464), F-91191 Gif sur Yvette, France
| | - S Mantri
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
| | - B Xu
- Institute of Theoretical and Applied Physics, Jiangsu Key Laboratory of Thin Films, School of Physical Science and Technology, Soochow University, Suzhou 215006, China
| | - L Bellaiche
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
| | - M Cazayous
- Laboratoire Matériaux et Phénomènes Quantiques, Université Paris Cité, CNRS, 10 rue Alice Domon et Léonie Duquet, 75205 Paris Cedex 13, France
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11
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Nguyen CPT, Schoenherr P, Salje EKH, Seidel J. Crackling noise microscopy. Nat Commun 2023; 14:4963. [PMID: 37587105 PMCID: PMC10432464 DOI: 10.1038/s41467-023-40665-4] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/20/2022] [Accepted: 08/02/2023] [Indexed: 08/18/2023] Open
Abstract
Crackling noise is a scale-invariant phenomenon found in various driven nonlinear dynamical material systems as a response to external stimuli such as force or external fields. Jerky material movements in the form of avalanches can span many orders of magnitude in size and follow universal scaling rules described by power laws. The concept was originally studied as Barkhausen noise in magnetic materials and now is used in diverse fields from earthquake research and building materials monitoring to fundamental research involving phase transitions and neural networks. Here, we demonstrate a method for nanoscale crackling noise measurements based on AFM nanoindentation, where the AFM probe can be used to study the crackling of individual nanoscale features, a technique we call crackling noise microscopy. The method is successfully applied to investigate the crackling of individual topological defects, i.e. ferroelectric domain walls. We show that critical exponents for avalanches are altered at these nanoscale features, leading to a suppression of mixed-criticality, which is otherwise present in domains. The presented concept opens the possibility of investigating the crackling of individual nanoscale features in a wide range of material systems.
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Affiliation(s)
- Cam-Phu Thi Nguyen
- School of Materials Science and Engineering, UNSW Sydney, Sydney, NSW, 2052, Australia
| | - Peggy Schoenherr
- School of Materials Science and Engineering, UNSW Sydney, Sydney, NSW, 2052, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), UNSW Sydney, Sydney, NSW, 2052, Australia
| | - Ekhard K H Salje
- Department of Earth Sciences, Cambridge University, Cambridge, UK.
| | - Jan Seidel
- School of Materials Science and Engineering, UNSW Sydney, Sydney, NSW, 2052, Australia.
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), UNSW Sydney, Sydney, NSW, 2052, Australia.
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12
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Zhang F, Zhang Y, Li L, Mou X, Peng H, Shen S, Wang M, Xiao K, Ji SH, Yi D, Nan T, Tang J, Yu P. Nanoscale multistate resistive switching in WO 3 through scanning probe induced proton evolution. Nat Commun 2023; 14:3950. [PMID: 37402709 DOI: 10.1038/s41467-023-39687-9] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/23/2022] [Accepted: 06/22/2023] [Indexed: 07/06/2023] Open
Abstract
Multistate resistive switching device emerges as a promising electronic unit for energy-efficient neuromorphic computing. Electric-field induced topotactic phase transition with ionic evolution represents an important pathway for this purpose, which, however, faces significant challenges in device scaling. This work demonstrates a convenient scanning-probe-induced proton evolution within WO3, driving a reversible insulator-to-metal transition (IMT) at nanoscale. Specifically, the Pt-coated scanning probe serves as an efficient hydrogen catalysis probe, leading to a hydrogen spillover across the nano junction between the probe and sample surface. A positively biased voltage drives protons into the sample, while a negative voltage extracts protons out, giving rise to a reversible manipulation on hydrogenation-induced electron doping, accompanied by a dramatic resistive switching. The precise control of the scanning probe offers the opportunity to manipulate the local conductivity at nanoscale, which is further visualized through a printed portrait encoded by local conductivity. Notably, multistate resistive switching is successfully demonstrated via successive set and reset processes. Our work highlights the probe-induced hydrogen evolution as a new direction to engineer memristor at nanoscale.
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Affiliation(s)
- Fan Zhang
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, 100084, Beijing, China
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, 100876, Beijing, China
| | - Yang Zhang
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, 100084, Beijing, China
| | - Linglong Li
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, 100084, Beijing, China
| | - Xing Mou
- School of Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, 100084, Beijing, China
| | - Huining Peng
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, 100084, Beijing, China
| | - Shengchun Shen
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, 100084, Beijing, China
| | - Meng Wang
- RIKEN Center for Emergent Matter Science (CEMS), Wako, 351-0198, Japan
| | - Kunhong Xiao
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, 100084, Beijing, China
| | - Shuai-Hua Ji
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, 100084, Beijing, China
- Frontier Science Center for Quantum Information, 100084, Beijing, China
| | - Di Yi
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Tianxiang Nan
- School of Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, 100084, Beijing, China
- Beijing Innovation Center for Future Chips (ICFC), Tsinghua University, 100084, Beijing, China
| | - Jianshi Tang
- School of Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, 100084, Beijing, China
- Beijing Innovation Center for Future Chips (ICFC), Tsinghua University, 100084, Beijing, China
| | - Pu Yu
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, 100084, Beijing, China.
- Frontier Science Center for Quantum Information, 100084, Beijing, China.
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13
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Bochenek D, Chrobak A, Ziółkowski G. Electric and Magnetic Properties of the Multiferroic Composites Made Based on Pb(Fe 1/2Nb 1/2) 1-xMn xO 3 and the Nickel-Zinc Ferrite. MATERIALS (BASEL, SWITZERLAND) 2023; 16:ma16103785. [PMID: 37241414 DOI: 10.3390/ma16103785] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/23/2023] [Revised: 05/12/2023] [Accepted: 05/15/2023] [Indexed: 05/28/2023]
Abstract
This work presents the electrophysical properties of the multiferroic ceramic composites obtained as a result of combining both magnetic and ferroelectric material. The ferroelectric components of the composite are materials with the following chemical formulas: PbFe0.5Nb0.5O3 (PFN), Pb(Fe0.495Nb0.495Mn0.01)O3 (PFNM1), and Pb(Fe0.49Nb0.49Mn0.02)O3 (PFNM2), while the magnetic component of the composite is the nickel-zinc ferrite (Ni0.64Zn0.36Fe2O4 marked as F). The crystal structure, microstructure, DC electric conductivity, and ferroelectric, dielectric, magnetic, and piezoelectric properties of the multiferroic composites are performed. The conducted tests confirm that the composite samples have good dielectric and magnetic properties at room temperature. Multiferroic ceramic composites have a two-phase crystal structure (ferroelectric from a tetragonal system and magnetic from a spinel structure) without a foreign phase. Composites with an admixture of manganese have a better set of functional parameters. The manganese admixture increases the microstructure's homogeneity, improves the magnetic properties, and reduces the electrical conductivity of composite samples. On the other hand, in the case of electric permittivity, a decrease in the maximum values of εm is observed with an increase in the amount of manganese in the ferroelectric component of composite compositions. However, the dielectric dispersion at high temperatures (associated with high conductivity) disappears.
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Affiliation(s)
- Dariusz Bochenek
- Institute of Materials Engineering, Faculty of Science and Technology, University of Silesia in Katowice, 75 Pułku Piechoty 1a, 41-500 Chorzów, Poland
| | - Artur Chrobak
- Institute of Physics, Faculty of Science and Technology, University of Silesia in Katowice, 75 Pułku Piechoty 1a, 41-500 Chorzów, Poland
| | - Grzegorz Ziółkowski
- Institute of Physics, Faculty of Science and Technology, University of Silesia in Katowice, 75 Pułku Piechoty 1a, 41-500 Chorzów, Poland
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14
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Chen D, Tan X, Shen B, Jiang J. Erasable Domain Wall Current-Dominated Resistive Switching in BiFeO 3 Devices with an Oxide-Metal Interface. ACS APPLIED MATERIALS & INTERFACES 2023; 15:25041-25048. [PMID: 37184983 DOI: 10.1021/acsami.3c02710] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/17/2023]
Abstract
Electric transport in the charged domain wall (CDW) region has emerged as a promising phenomenon for the development of next-generation ferro-resistive memory with ultrahigh data storage density. However, accurately measuring the conductivity of CDWs induced by polarization reversal remains challenging due to the polarization modulation of the Schottky barrier at the thin film-electrode interface, which could partially contribute to the collected "on" current of the device. Here, we propose carefully selecting an electrode that can suppress the effect of interfacial barrier modulation induced by polarization reversal, allowing the collected current mainly from the conductive CDWs. The experiment was conducted on epitaxial BiFeO3(001) thin-film devices with vertical and horizontal geometries. Piezo-response force microscopy scanning showed the local polarization experienced 180° rotation to form CDWs under the vertical electric field. However, devices with SrRuO3 epitaxial top electrodes still exhibit an interfacial barrier-dominated diode behavior, with the "on" current proportional to the electrode area. To identify the CDW current, more interfacial defects were introduced by the deposition of Pt top electrodes, which significantly enhanced charge injection for the compensation of the reversed polarization driven by the electric field, leading to the suppressed polarization modulation of the Schottky barrier height. It was observed that the current flow through Pt electrodes is significantly lower compared to that of SRO electrodes and appears to be primarily influenced by the electrode perimeter instead of the electrode area, indicating CDW-dominated conduction behavior in these devices. Planar nanodevices were further fabricated to support the quantitative investigation of the Pt electrode size-dependent "on" current with a linear fit of the current magnitude versus the CDW cross-sectional area. This work constitutes an essential part of understanding the role of the CDW current in ferro-resistive memory devices.
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Affiliation(s)
- Dongfang Chen
- Department of Mechanical Engineering & Mechanics, Drexel University, Philadelphia, Pennsylvania 19104-2875, United States
| | - Xiaojun Tan
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, P. R. China
| | - Bowen Shen
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, P. R. China
| | - Jun Jiang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, P. R. China
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15
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Lee J, Park JW, Cho GY, Yeom HW. Mobile Kink Solitons in a Van der Waals Charge-Density-Wave Layer. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2300160. [PMID: 37058741 DOI: 10.1002/adma.202300160] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/06/2023] [Revised: 03/18/2023] [Indexed: 06/04/2023]
Abstract
Kinks, point-like geometrical defects along dislocations, domain walls, and DNA, are stable and mobile, as solutions of a sine-Gordon wave equation. While they are widely investigated for crystal deformations and domain wall motions, electronic properties of individual kinks have received little attention. In this work, electronically and topologically distinct kinks are discovered along electronic domain walls in a correlated van der Waals insulator of 1T-TaS2 . Mobile kinks and antikinks are identified as trapped by pinning defects and imaged in scanning tunneling microscopy. Their atomic structures and in-gap electronic states are unveiled, which are mapped approximately into Su-Schrieffer-Heeger solitons. The twelvefold degeneracy of the domain walls in the present system guarantees an extraordinarily large number of distinct kinks and antikinks to emerge. Such large degeneracy together with the robust geometrical nature may be useful for handling multilevel information in van der Waals materials architectures.
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Affiliation(s)
- Jinwon Lee
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), 37673, Pohang, Republic of Korea
- Department of Physics, Pohang University of Science and Technology, 37673, Pohang, Republic of Korea
- Leiden Institute of Physics, Leiden University, 2333 CA, Leiden, The Netherlands
| | - Jae Whan Park
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), 37673, Pohang, Republic of Korea
| | - Gil Young Cho
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), 37673, Pohang, Republic of Korea
- Department of Physics, Pohang University of Science and Technology, 37673, Pohang, Republic of Korea
| | - Han Woong Yeom
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), 37673, Pohang, Republic of Korea
- Department of Physics, Pohang University of Science and Technology, 37673, Pohang, Republic of Korea
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16
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Yang T, Dai C, Chen LQ. Thermodynamics of Light-Induced Nanoscale Polar Structures in Ferroelectric Superlattices. NANO LETTERS 2023; 23:2551-2556. [PMID: 36971545 DOI: 10.1021/acs.nanolett.2c04586] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
We study the thermodynamics of nanoscale polar structures in PbTiO3/SrTiO3 ferroelectric superlattices induced by above-bandgap optical excitation using a phase-field model explicitly considering both structural and electronic processes. We demonstrate that the light-excited carriers provide the charge compensation of polarization bound charges and the lattice thermal energy, both of which are key to the thermodynamic stabilization of a previously observed supercrystal, a three-dimensionally periodic nanostructure, within a window of substrate strains, while different mechanical and electrical boundary conditions can stabilize a number of other nanoscale polar structures by balancing the competing short-range exchange interactions responsible for the domain wall energy and long-range electrostatic and elastic interactions. The insights into the light-induced formation and richness of nanoscale structures from this work offer theoretical guidance for exploring and manipulating the thermodynamic stability of nanoscale polar structures employing a combination of thermal, mechanical, and electrical stimuli as well as light.
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Affiliation(s)
- Tiannan Yang
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Cheng Dai
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Long-Qing Chen
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
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17
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Wu M, Sun F, Wang X, Zhang X, Chen W, Zheng Y. Facile Control of Ferroelastic Domain Patterns in Multiferroic Thin Films by a Scanning Tip Bias. ACS APPLIED MATERIALS & INTERFACES 2023; 15:11983-11993. [PMID: 36808955 DOI: 10.1021/acsami.2c20106] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
BiFeO3, known as the "holy grail of all multiferroics", provides an appealing platform for exploration of multifield coupling physics and design of functional devices. Many fantastic properties of BiFeO3 are regulated by its ferroelastic domain structure. However, a facile programable control on the ferroelastic domain structure in BiFeO3 remains challenging and our understanding on the existing control strategies is also far from complete. This work reports a facile control of ferroelastic domain patterns in BiFeO3 thin films under area scanning poling by exploiting the tip bias as the control parameter. Combining scanning probe microscopy experiments and simulations, we found that BiFeO3 thin films with pristine 71° rhombohedral-phase stripe domains exhibit at least four switching pathways solely by controlling the scanning tip bias. As a result, one can readily write mesoscopic topological defects into the films without the necessity to change the tip motion. The correlation between conductance of the scanned region and the switching pathway is further investigated. Our results extend the current understanding on the domain switching kinetics and the coupled electronic transport properties in BiFeO3 thin films. The facile voltage control of ferroelastic domains should facilitate the development of configurable electronic and spintronic devices.
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Affiliation(s)
- Mengjun Wu
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Fei Sun
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Xintong Wang
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Xiaoyue Zhang
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Weijin Chen
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- School of Materials, Shenzhen Campus of Sun Yat-sen University, Shenzhen 518107, China
| | - Yue Zheng
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
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18
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An Z, Yokota H, Kurihara K, Hasegawa N, Marton P, Glazer AM, Uesu Y, Ren W, Ye ZG, Paściak M, Zhang N. Tuning of Polar Domain Boundaries in Nonpolar Perovskite. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2207665. [PMID: 36545705 DOI: 10.1002/adma.202207665] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/22/2022] [Revised: 12/07/2022] [Indexed: 06/17/2023]
Abstract
Domain boundaries in ferroic materials are found to have various physical properties not observed in the surrounding domains. Such differences can be enhanced and bring promising functionalities when centrosymmetric nonpolar materials encounter polar domain boundaries. In this work, a tunable polar domain boundary is discovered in an antiferroelectric single crystal. Under a small stress or electric field, the density, volume, and polarity of the boundaries are successfully controlled.
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Affiliation(s)
- Zheyi An
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Hiroko Yokota
- Department of Physics, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba City, 263-8522, Japan
- JST PRESTO, 7 Goban-cho, Chiyoda-Ku, Tokyo, 102-0076, Japan
| | - Kyomaru Kurihara
- Department of Physics, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba City, 263-8522, Japan
| | - Nozomu Hasegawa
- Department of Physics, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba City, 263-8522, Japan
| | - Pavel Marton
- FZU-Institute of Physics of the Czech Academy of Sciences, Na Slovance 2, Prague 8, 182 21, Czech Republic
| | - Anthony Michael Glazer
- Department of Physics, University of Oxford, Parks Road, Oxford, OX1 3PU, UK
- Department of Physics, University of Warwick, Gibbet Hill Road, Coventry, CV4 7AL, UK
| | - Yoshiaki Uesu
- Department of Physics, Faculty of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo, 169-8555, Japan
| | - Wei Ren
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Zuo-Guang Ye
- Department of Chemistry and 4D LABS, Simon Fraser University, 8888 University Drive, Burnaby, British Columbia, V5A 1S6, Canada
| | - Marek Paściak
- FZU-Institute of Physics of the Czech Academy of Sciences, Na Slovance 2, Prague 8, 182 21, Czech Republic
| | - Nan Zhang
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
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19
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Smith KA, Ramkumar SP, Du K, Xu X, Cheong SW, Gilbert Corder SN, Bechtel HA, Nowadnick EA, Musfeldt JL. Real-Space Infrared Spectroscopy of Ferroelectric Domain Walls in Multiferroic h-(Lu,Sc)FeO 3. ACS APPLIED MATERIALS & INTERFACES 2023; 15:7562-7571. [PMID: 36715538 DOI: 10.1021/acsami.2c19600] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
We employ synchrotron-based near-field infrared spectroscopy to image the phononic properties of ferroelectric domain walls in hexagonal (h) Lu0.6Sc0.4FeO3, and we compare our findings with a detailed symmetry analysis, lattice dynamics calculations, and prior models of domain-wall structure. Rather than metallic and atomically thin as observed in the rare-earth manganites, ferroelectric walls in h-Lu0.6Sc0.4FeO3 are broad and semiconducting, a finding that we attribute to the presence of an A-site substitution-induced intermediate phase that reduces strain and renders the interior of the domain wall nonpolar. Mixed Lu/Sc occupation on the A site also provides compositional heterogeneity over micron-sized length scales, and we leverage the fact that Lu and Sc cluster in different ratios to demonstrate that the spectral characteristics at the wall are robust even in different compositional regimes. This work opens the door to broadband imaging of physical and chemical heterogeneity in ferroics and represents an important step toward revealing the rich properties of these flexible defect states.
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Affiliation(s)
- Kevin A Smith
- Department of Chemistry, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Sriram P Ramkumar
- Department of Materials Science and Engineering, University of California, Merced, California 95343 United States
| | - Kai Du
- Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854 United States
| | - Xianghan Xu
- Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854 United States
| | - Sang-Wook Cheong
- Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854 United States
- Rutgers Center for Emergent Materials, Rutgers University, Piscataway, New Jersey 08854 United States
| | - Stephanie N Gilbert Corder
- Advanced Light Source Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 United States
| | - Hans A Bechtel
- Advanced Light Source Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 United States
| | - Elizabeth A Nowadnick
- Department of Materials Science and Engineering, University of California, Merced, California 95343 United States
| | - Janice L Musfeldt
- Department of Chemistry, University of Tennessee, Knoxville, Tennessee 37996, United States
- Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, United States
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20
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Caretta L, Shao YT, Yu J, Mei AB, Grosso BF, Dai C, Behera P, Lee D, McCarter M, Parsonnet E, K P H, Xue F, Guo X, Barnard ES, Ganschow S, Hong Z, Raja A, Martin LW, Chen LQ, Fiebig M, Lai K, Spaldin NA, Muller DA, Schlom DG, Ramesh R. Non-volatile electric-field control of inversion symmetry. NATURE MATERIALS 2023; 22:207-215. [PMID: 36536139 DOI: 10.1038/s41563-022-01412-0] [Citation(s) in RCA: 9] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/24/2021] [Accepted: 10/18/2022] [Indexed: 06/17/2023]
Abstract
Competition between ground states at phase boundaries can lead to significant changes in properties under stimuli, particularly when these ground states have different crystal symmetries. A key challenge is to stabilize and control the coexistence of symmetry-distinct phases. Using BiFeO3 layers confined between layers of dielectric TbScO3 as a model system, we stabilize the mixed-phase coexistence of centrosymmetric and non-centrosymmetric BiFeO3 phases at room temperature with antipolar, insulating and polar semiconducting behaviour, respectively. Application of orthogonal in-plane electric (polar) fields results in reversible non-volatile interconversion between the two phases, hence removing and introducing centrosymmetry. Counterintuitively, we find that an electric field 'erases' polarization, resulting from the anisotropy in octahedral tilts introduced by the interweaving TbScO3 layers. Consequently, this interconversion between centrosymmetric and non-centrosymmetric phases generates changes in the non-linear optical response of over three orders of magnitude, resistivity of over five orders of magnitude and control of microscopic polar order. Our work establishes a platform for cross-functional devices that take advantage of changes in optical, electrical and ferroic responses, and demonstrates octahedral tilts as an important order parameter in materials interface design.
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Affiliation(s)
- Lucas Caretta
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA.
- School of Engineering, Brown University, Providence, RI, USA.
| | - Yu-Tsun Shao
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA
- Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, CA, USA
| | - Jia Yu
- Department of Physics, University of Texas, Austin, TX, USA
| | - Antonio B Mei
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY, USA
| | | | - Cheng Dai
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA
| | - Piush Behera
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - Daehun Lee
- Department of Physics, University of Texas, Austin, TX, USA
| | | | - Eric Parsonnet
- Department of Physics, University of California, Berkeley, CA, USA
| | - Harikrishnan K P
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA
| | - Fei Xue
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA
| | - Xiangwei Guo
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China
- Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, China
| | - Edward S Barnard
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | | | - Zijian Hong
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China
| | - Archana Raja
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Lane W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Long-Qing Chen
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA
| | - Manfred Fiebig
- Department of Materials, ETH Zurich, Zurich, Switzerland
| | - Keji Lai
- Department of Physics, University of Texas, Austin, TX, USA
| | | | - David A Muller
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY, USA
| | - Darrell G Schlom
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY, USA
- Leibniz-Institut für Kristallzüchtung, Berlin, Germany
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY, USA
| | - Ramamoorthy Ramesh
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA.
- Department of Physics, University of California, Berkeley, CA, USA.
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
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21
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Yeo Y, Hwang SY, Yeo J, Kim J, Jang J, Park HS, Kim YJ, Le DD, Song K, Kim M, Ryu S, Choi SY, Yang CH. Configurable Crack Wall Conduction in a Complex Oxide. NANO LETTERS 2023; 23:398-406. [PMID: 36595450 DOI: 10.1021/acs.nanolett.2c02640] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Mobile defects in solid-state materials play a significant role in memristive switching and energy-efficient neuromorphic computation. Techniques for confining and manipulating point defects may have great promise for low-dimensional memories. Here, we report the spontaneous gathering of oxygen vacancies at strain-relaxed crack walls in SrTiO3 thin films grown on DyScO3 substrates as a result of flexoelectricity. We found that electronic conductance at the crack walls was enhanced compared to the crack-free region, by a factor of 104. A switchable asymmetric diode-like feature was also observed, and the mechanism is discussed, based on the electrical migration of oxygen vacancy donors in the background of Sr-deficient acceptors forming n+-n or n-n+ junctions. By tracing the temporal relaxations of surface potential and lattice expansion of a formed region, we determine the diffusivity of mobile defects in crack walls to be 1.4 × 10-16 cm2/s, which is consistent with oxygen vacancy kinetics.
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Affiliation(s)
- Youngki Yeo
- Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon34141, Republic of Korea
- Center for Lattice Defectronics, Korea Advanced Institute of Science and Technology, Daejeon34141, Republic of Korea
| | - Soo-Yoon Hwang
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang37673, Republic of Korea
| | - Jinwook Yeo
- Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology, Daejeon34141, Republic of Korea
| | - Jihun Kim
- Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon34141, Republic of Korea
- Center for Lattice Defectronics, Korea Advanced Institute of Science and Technology, Daejeon34141, Republic of Korea
| | - Jinhyuk Jang
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang37673, Republic of Korea
| | - Heung-Sik Park
- Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon34141, Republic of Korea
- Center for Lattice Defectronics, Korea Advanced Institute of Science and Technology, Daejeon34141, Republic of Korea
| | - Yong-Jin Kim
- Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon34141, Republic of Korea
- Center for Lattice Defectronics, Korea Advanced Institute of Science and Technology, Daejeon34141, Republic of Korea
| | - Duc Duy Le
- Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon34141, Republic of Korea
- Center for Lattice Defectronics, Korea Advanced Institute of Science and Technology, Daejeon34141, Republic of Korea
| | - Kyung Song
- Department of Materials Analysis and Evaluation, Korea Institute of Materials Science, Changwon51508, Republic of Korea
| | - Moonhong Kim
- Division of Mechanical Engineering, Korea Maritime & Ocean University, 727 Taejong-ro, Yeongdo-gu, Busan49112, South Korea
| | - Seunghwa Ryu
- Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology, Daejeon34141, Republic of Korea
| | - Si-Young Choi
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang37673, Republic of Korea
| | - Chan-Ho Yang
- Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon34141, Republic of Korea
- Center for Lattice Defectronics, Korea Advanced Institute of Science and Technology, Daejeon34141, Republic of Korea
- KAIST Institute for the NanoCentury, Korea Advanced Institute of Science and Technology, Yuseong-gu, Daejeon34141, Republic of Korea
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22
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Salje EKH, Kustov S. Dynamic domain boundaries: chemical dopants carried by moving twin walls. Phys Chem Chem Phys 2023; 25:1588-1601. [PMID: 36602278 DOI: 10.1039/d2cp04908b] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/24/2022]
Abstract
Domain walls and specifically ferroelastic twin boundaries are depositaries and fast diffusion pathways for chemical dopants and intrinsic lattice defects. Ferroelastic domain patterns act as templates for chemical structures where the walls are the device and not the bulk. Several examples of such engineered domain boundaries are given. Moving twin boundaries are shown to carry with them the dopants, although the activation of this mechanism depends sensitively on the applied external force. If the force is too weak, the walls remain pinned while too strong forces break the walls free of the dopants and move them independently. Several experimental methods and approaches are discussed.
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Affiliation(s)
- E K H Salje
- Department of Earth Sciences, University of Cambridge, Cambridge, UK.
| | - S Kustov
- Department of Physics, University of Balearic Islands, 07122 Palma de Mallorca, Spain
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23
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Liu Z, Wang H, Li M, Tao L, Paudel TR, Yu H, Wang Y, Hong S, Zhang M, Ren Z, Xie Y, Tsymbal EY, Chen J, Zhang Z, Tian H. In-plane charged domain walls with memristive behaviour in a ferroelectric film. Nature 2023; 613:656-661. [PMID: 36653455 DOI: 10.1038/s41586-022-05503-5] [Citation(s) in RCA: 12] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/29/2019] [Accepted: 11/01/2022] [Indexed: 01/19/2023]
Abstract
Domain-wall nanoelectronics is considered to be a new paradigm for non-volatile memory and logic technologies in which domain walls, rather than domains, serve as an active element. Especially interesting are charged domain walls in ferroelectric structures, which have subnanometre thicknesses and exhibit non-trivial electronic and transport properties that are useful for various nanoelectronics applications1-3. The ability to deterministically create and manipulate charged domain walls is essential to realize their functional properties in electronic devices. Here we report a strategy for the controllable creation and manipulation of in-plane charged domain walls in BiFeO3 ferroelectric films a few nanometres thick. By using an in situ biasing technique within a scanning transmission electron microscope, an unconventional layer-by-layer switching mechanism is detected in which ferroelectric domain growth occurs in the direction parallel to an applied electric field. Based on atomically resolved electron energy-loss spectroscopy, in situ charge mapping by in-line electron holography and theoretical calculations, we show that oxygen vacancies accumulating at the charged domain walls are responsible for the domain-wall stability and motion. Voltage control of the in-plane domain-wall position within a BiFeO3 film gives rise to multiple non-volatile resistance states, thus demonstrating the key functional property of being a memristor a few unit cells thick. These results promote a better understanding of ferroelectric switching behaviour and provide a new strategy for creating unit-cell-scale devices.
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Affiliation(s)
- Zhongran Liu
- Center of Electron Microscopy, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China
| | - Han Wang
- Department of Materials Science and Engineering, National University of Singapore, Singapore City, Singapore.,Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - Ming Li
- Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, NE, USA
| | - Lingling Tao
- Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, NE, USA
| | - Tula R Paudel
- Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, NE, USA.,Department of Physics, South Dakota School of Mines and Technology, Rapid City, SD, USA
| | - Hongyang Yu
- Center of Electron Microscopy, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China
| | - Yuxuan Wang
- Center of Electron Microscopy, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China
| | - Siyuan Hong
- Department of Physics, Zhejiang University, Hangzhou, China
| | - Meng Zhang
- Department of Physics, Zhejiang University, Hangzhou, China
| | - Zhaohui Ren
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China
| | - Yanwu Xie
- Department of Physics, Zhejiang University, Hangzhou, China
| | - Evgeny Y Tsymbal
- Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, NE, USA.
| | - Jingsheng Chen
- Department of Materials Science and Engineering, National University of Singapore, Singapore City, Singapore.
| | - Ze Zhang
- Center of Electron Microscopy, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China. .,State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China.
| | - He Tian
- Center of Electron Microscopy, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China. .,State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China. .,School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, China.
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24
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Strain induced structural phase transition and compositional dependent magnetic phase transition in Ti doped Bi 0.80Ba 0.20FeO 3 ceramics. Heliyon 2022; 8:e12530. [PMID: 36590567 PMCID: PMC9800207 DOI: 10.1016/j.heliyon.2022.e12530] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/11/2022] [Revised: 11/21/2022] [Accepted: 12/14/2022] [Indexed: 12/24/2022] Open
Abstract
Bi0.80Ba0.20Fe1-xTixO3 ( 0 ≤ x ≤ 0.10 ) samples are prepared using solid state reaction technique. Bi3+ site is replaced with 20 % Ba2+ which induced structural modification from rhombohedral to pseudo cubic accompanied by the creation of oxygen vacancies owing to the charge reimbursement. Fe3+ site is replaced with different concentrations of Ti4+ keeping Ba content fixed. All the samples exhibited similar morphology and no significant variation in grain size is observed by substituting Ti at Fe site. All of the samples exhibited ferromagnetic behavior, which is ascribed to the destruction of spiral spin structures and changes in super-exchange interaction strength caused by variations in bond lengths of Fe-O and Fe-O-Fe. The decrease in magnetization with increasing Ti concentration is due to magnetic moment dilution caused by non-magnetic Ti4+. An anomalous trend in magnetization is observed for magnetic measurements at low temperature (77 K) where structural transformation from ferromagnetic to diamagnetic behavior was noted for 10% Ti content. Further, because of the incorporation of Ti4+, an improved dielectric property was observed due to increase in resistivity and decrease in the defect concentration (oxygen vacancies). In the present study, it was concluded that optimum concentration of Ba2+ (20%) and Ti4+ co-doped BiFeO3 systems have shown enhanced multiferroic properties at room temperature.
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25
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Dutta K, Singh R. Magnetoelastic coupling and critical behavior of some strongly correlated magnetic systems. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 35:083001. [PMID: 33412540 DOI: 10.1088/1361-648x/abd99d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/11/2020] [Accepted: 01/07/2021] [Indexed: 06/12/2023]
Abstract
The strongly correlated magnetic systems are attracting continuous attention in current condensed matter research due to their very compelling physics and promising technological applications. Being a host to charge, spin, and lattice degrees of freedom, such materials exhibit a variety of phases, and investigation of their physical behavior near such a phase transition bears an immense possibility. This review summarizes the recent progress in elucidating the role of magnetoelastic coupling on the critical behavior of some technologically important class of strongly correlated magnetic systems such as perovskite magnetites, uranium ferromagnetic superconductors, and multiferroic hexagonal manganites. It begins with encapsulation of various experimental findings and then proceeds toward describing how such experiments motivate theories within the Ginzburg-Landau phenomenological picture in order to capture the physics near a magnetic phase transition of such systems. The theoretical results that are obtained by implementing Wilson's renormalization-group to nonlocal Ginzburg-Landau model Hamiltonians are also highlighted. A list of possible experimental realizations of the coupled model Hamiltonians elucidates the importance of spin-lattice coupling near a critical point of strongly correlated magnetic systems.
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Affiliation(s)
- Kishore Dutta
- Department of Physics, Handique Girls' College, Guwahati 781 001, India
| | - Rohit Singh
- School of Physical Sciences, Jawaharlal Nehru University, New Delhi 110 067, India
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26
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Giant switchable non thermally-activated conduction in 180° domain walls in tetragonal Pb(Zr,Ti)O 3. Nat Commun 2022; 13:7239. [PMID: 36433950 PMCID: PMC9700693 DOI: 10.1038/s41467-022-34777-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/08/2022] [Accepted: 11/04/2022] [Indexed: 11/27/2022] Open
Abstract
Conductive domain walls in ferroelectrics offer a promising concept of nanoelectronic circuits with 2D domain-wall channels playing roles of memristors or synoptic interconnections. However, domain wall conduction remains challenging to control and pA-range currents typically measured on individual walls are too low for single-channel devices. Charged domain walls show higher conductivity, but are generally unstable and difficult to create. Here, we show highly conductive and stable channels on ubiquitous 180° domain walls in the archetypical ferroelectric, tetragonal Pb(Zr,Ti)O3. These electrically erasable/rewritable channels show currents of tens of nanoamperes (200 to 400 nA/μm) at voltages ≤2 V and metallic-like non thermally-activated transport properties down to 4 K, as confirmed by nanoscopic mapping. The domain structure analysis and phase-field simulations reveal complex switching dynamics, in which the extraordinary conductivity in strained Pb(Zr,Ti)O3 films is explained by an interplay between ferroelastic a- and c-domains. This work demonstrates the potential of accessible and stable arrangements of nominally uncharged and electrically switchable domain walls for nanoelectronics.
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27
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Alikin D, Turygin A, Ushakov A, Kosobokov M, Alikin Y, Hu Q, Liu X, Xu Z, Wei X, Shur V. Competition between Ferroelectric and Ferroelastic Domain Wall Dynamics during Local Switching in Rhombohedral PMN-PT Single Crystals. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3912. [PMID: 36364688 PMCID: PMC9659027 DOI: 10.3390/nano12213912] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/10/2022] [Revised: 10/31/2022] [Accepted: 11/02/2022] [Indexed: 06/16/2023]
Abstract
The possibility to control the charge, type, and density of domain walls allows properties of ferroelectric materials to be selectively enhanced or reduced. In ferroelectric-ferroelastic materials, two types of domain walls are possible: pure ferroelectric and ferroelastic-ferroelectric. In this paper, we demonstrated a strategy to control the selective ferroelectric or ferroelastic domain wall formation in the (111) single-domain rhombohedral PMN-PT single crystals at the nanoscale by varying the relative humidity level in a scanning probe microscopy chamber. The solution of the corresponding coupled electro-mechanical boundary problem allows explaining observed competition between ferroelastic and ferroelectric domain growth. The reduction in the ferroelastic domain density during local switching at elevated humidity has been attributed to changes in the electric field spatial distribution and screening effectiveness. The established mechanism is important because it reveals a kinetic nature of the final domain patterns in multiaxial materials and thus provides a general pathway to create desirable domain structure in ferroelectric materials for applications in piezoelectric and optical devices.
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Affiliation(s)
- Denis Alikin
- School of Natural Sciences and Mathematics, Ural Federal University, 620000 Ekaterinburg, Russia
| | - Anton Turygin
- School of Natural Sciences and Mathematics, Ural Federal University, 620000 Ekaterinburg, Russia
| | - Andrei Ushakov
- School of Natural Sciences and Mathematics, Ural Federal University, 620000 Ekaterinburg, Russia
| | - Mikhail Kosobokov
- School of Natural Sciences and Mathematics, Ural Federal University, 620000 Ekaterinburg, Russia
| | - Yurij Alikin
- School of Natural Sciences and Mathematics, Ural Federal University, 620000 Ekaterinburg, Russia
| | - Qingyuan Hu
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi’an Jiaotong University, Xi’an 710049, China
| | - Xin Liu
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi’an Jiaotong University, Xi’an 710049, China
| | - Zhuo Xu
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi’an Jiaotong University, Xi’an 710049, China
| | - Xiaoyong Wei
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi’an Jiaotong University, Xi’an 710049, China
| | - Vladimir Shur
- School of Natural Sciences and Mathematics, Ural Federal University, 620000 Ekaterinburg, Russia
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28
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Buragohain P, Lu H, Richter C, Schenk T, Kariuki P, Glinsek S, Funakubo H, Íñiguez J, Defay E, Schroeder U, Gruverman A. Quantification of the Electromechanical Measurements by Piezoresponse Force Microscopy. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2206237. [PMID: 36210741 DOI: 10.1002/adma.202206237] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/09/2022] [Revised: 09/10/2022] [Indexed: 06/16/2023]
Abstract
Piezoresponse force microscopy (PFM) is widely used for characterization and exploration of the nanoscale properties of ferroelectrics. However, quantification of the PFM signal is challenging due to the convolution of various extrinsic and intrinsic contributions. Although quantification of the PFM amplitude signal has received considerable attention, quantification of the PFM phase signal has not been addressed. A properly calibrated PFM phase signal can provide valuable information on the sign of the local piezoelectric coefficient-an important and nontrivial issue for emerging ferroelectrics. In this work, two complementary methodologies to calibrate the PFM phase signal are discussed. The first approach is based on using a standard reference sample with well-known independently measured piezoelectric coefficients, while the second approach exploits the electrostatic sample-cantilever interactions to determine the parasitic phase offset. Application of these methodologies to studies of the piezoelectric behavior in ferroelectric HfO2 -based thin-film capacitors reveals intriguing variations in the sign of the longitudinal piezoelectric coefficient, d33,eff . It is shown that the piezoelectric properties of the HfO2 -based capacitors are inherently sensitive to their thickness, electrodes, as well as deposition methods, and can exhibit wide variations including a d33,eff sign change within a single device.
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Affiliation(s)
- Pratyush Buragohain
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE 68588, USA
| | - Haidong Lu
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE 68588, USA
| | - Claudia Richter
- NaMLab gGmbH, 01187, Noethnitzer Strasse 64 a, Dresden, Germany
| | - Tony Schenk
- Ferroelectric Memory GmbH, 01099, Charlotte-Bühler-Str. 12, Dresden, Germany
| | - Pamenas Kariuki
- NaMLab gGmbH, 01187, Noethnitzer Strasse 64 a, Dresden, Germany
| | - Sebastjan Glinsek
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology, 41 Rue du Brill, Belvaux, L-4422, Luxembourg
| | - Hiroshi Funakubo
- School of Materials and Chemical Technology, Tokyo Institute of Technology, Yokohama, 226-8502, Japan
| | - Jorge Íñiguez
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology, 41 Rue du Brill, Belvaux, L-4422, Luxembourg
- Department of Physics and Materials Science, University of Luxembourg, 41 Rue du Brill, Belvaux, L-4422, Luxembourg
| | - Emmanuel Defay
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology, 41 Rue du Brill, Belvaux, L-4422, Luxembourg
| | - Uwe Schroeder
- NaMLab gGmbH, 01187, Noethnitzer Strasse 64 a, Dresden, Germany
| | - Alexei Gruverman
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE 68588, USA
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29
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Liu Y, Kelley KP, Funakubo H, Kalinin SV, Ziatdinov M. Exploring Physics of Ferroelectric Domain Walls in Real Time: Deep Learning Enabled Scanning Probe Microscopy. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2203957. [PMID: 36065001 PMCID: PMC9631058 DOI: 10.1002/advs.202203957] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/09/2022] [Revised: 08/12/2022] [Indexed: 05/25/2023]
Abstract
The functionality of ferroelastic domain walls in ferroelectric materials is explored in real-time via the in situ implementation of computer vision algorithms in scanning probe microscopy (SPM) experiment. The robust deep convolutional neural network (DCNN) is implemented based on a deep residual learning framework (Res) and holistically nested edge detection (Hed), and ensembled to minimize the out-of-distribution drift effects. The DCNN is implemented for real-time operations on SPM, converting the data stream into the semantically segmented image of domain walls and the corresponding uncertainty. Further the pre-defined experimental workflows perform piezoresponse spectroscopy measurement on thus discovered domain walls, and alternating high- and low-polarization dynamic (out-of-plane) ferroelastic domain walls in a PbTiO3 (PTO) thin film and high polarization dynamic (out-of-plane) at short ferroelastic walls (compared with long ferroelastic walls) in a lead zirconate titanate (PZT) thin film is reported. This work establishes the framework for real-time DCNN analysis of data streams in scanning probe and other microscopies and highlights the role of out-of-distribution effects and strategies to ameliorate them in real time analytics.
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Affiliation(s)
- Yongtao Liu
- Center for Nanophase Materials SciencesOak Ridge National LaboratoryOak RidgeTN37830USA
| | - Kyle P. Kelley
- Center for Nanophase Materials SciencesOak Ridge National LaboratoryOak RidgeTN37830USA
| | - Hiroshi Funakubo
- Department of Material Science and EngineeringTokyo Institute of TechnologyYokohama226‐8502Japan
| | - Sergei V. Kalinin
- Department of Materials Science and EngineeringUniversity of TennesseeKnoxvilleTN37996USA
| | - Maxim Ziatdinov
- Center for Nanophase Materials SciencesOak Ridge National LaboratoryOak RidgeTN37830USA
- Computational Sciences and Engineering DivisionOak Ridge National LaboratoryOak RidgeTN37830USA
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30
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Chibirev AO, Leontyev AV, Kabanov VV, Mamin RF. Origin of Negative Photoconductivity at the Interface of Ba 0.8Sr 0.2TiO 3/LaMnO 3/Ba 0.8Sr 0.2TiO 3 Heterostructures. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3774. [PMID: 36364550 PMCID: PMC9655687 DOI: 10.3390/nano12213774] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/30/2022] [Revised: 10/20/2022] [Accepted: 10/23/2022] [Indexed: 06/16/2023]
Abstract
The study of Ba0.8Sr0.2TiO3/LaMnO3/Ba0.8Sr0.2TiO3 heterostructures on a MgO substrate with Ba0.8Sr0.2TiO3 ferroelectric films revealed the occurrence of a metallic character of the temperature behavior of the resistance at a temperature less than 175 K. This behavior is associated with an increased charge concentration at the interface due to a discontinuity in the ferroelectric polarization at the interface between the films. At these temperatures, the effect of negative photoconductivity is observed under uniform illumination with the light of a selected spectral composition event on the surface of the ferroelectric film. The combined exposure to green and infrared light led to an addition of the effects. As a result, a cumulative effect was observed. The effect of metallic conductivity is due to the discontinuity of ferroelectric polarization. Therefore, we explain that the partial screening of the ferroelectric polarization by photogenerated charge carriers causes a reduction in the carrier concentration at the interface. Measurements in the Kelvin mode of atomic force microscopy showed that illumination influences the surface charge concentration in a similar way; this observation confirms our hypothesis.
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Affiliation(s)
- Aleksei O. Chibirev
- Zavoisky Physical-Technical Institute, FRC Kazan Scientific Center of RAS, 420029 Kazan, Russia
| | - Andrei V. Leontyev
- Zavoisky Physical-Technical Institute, FRC Kazan Scientific Center of RAS, 420029 Kazan, Russia
| | - Viktor V. Kabanov
- Department for Complex Matter, Jozef Stefan Institute, 1000 Ljubljana, Slovenia
| | - Rinat F. Mamin
- Zavoisky Physical-Technical Institute, FRC Kazan Scientific Center of RAS, 420029 Kazan, Russia
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31
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Biferroelectricity of a homochiral organic molecule in both solid crystal and liquid crystal phases. Nat Commun 2022; 13:6150. [PMID: 36258026 PMCID: PMC9579164 DOI: 10.1038/s41467-022-33925-2] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/15/2022] [Accepted: 10/07/2022] [Indexed: 11/26/2022] Open
Abstract
Ferroelectricity, existing in either solid crystals or liquid crystals, gained widespread attention from science and industry for over a century. However, ferroelectricity has never been observed in both solid and liquid crystal phases of a material simultaneously. Inorganic ferroelectrics that dominate the market do not have liquid crystal phases because of their completely rigid structure caused by intrinsic chemical bonds. We report a ferroelectric homochiral cholesterol derivative, β-sitosteryl 4-iodocinnamate, where both solid and liquid crystal phases can exhibit the behavior of polarization switching as determined by polarization–voltage hysteresis loops and piezoresponse force microscopy measurements. The unique long molecular chain, sterol structure, and homochirality of β-sitosteryl 4-iodocinnamate molecules enable the formation of polar crystal structures with point group 2 in solid crystal phases, and promote the layered and helical structure in the liquid crystal phase with vertical polarization. Our findings demonstrate a compound that can show the biferroelectricity in both solid and liquid crystal phases, which would inspire further exploration of the interplay between solid and liquid crystal ferroelectric phases. Ferroelectricity normally exists in either solid crystals or liquid crystals. Here, the authors report a homochiral organic compound which shows ferroelectricity in both solid crystal and liquid crystal phases.
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32
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Roede ED, Shapovalov K, Moran TJ, Mosberg AB, Yan Z, Bourret E, Cano A, Huey BD, van Helvoort ATJ, Meier D. The Third Dimension of Ferroelectric Domain Walls. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2202614. [PMID: 35820118 DOI: 10.1002/adma.202202614] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/21/2022] [Revised: 06/13/2022] [Indexed: 06/15/2023]
Abstract
Ferroelectric domain walls are quasi-2D systems that show great promise for the development of nonvolatile memory, memristor technology, and electronic components with ultrasmall feature size. Electric fields, for example, can change the domain wall orientation relative to the spontaneous polarization and switch between resistive and conductive states, controlling the electrical current. Being embedded in a 3D material, however, the domain walls are not perfectly flat and can form networks, which leads to complex physical structures. In this work, the importance of the nanoscale structure for the emergent transport properties is demonstrated, studying electronic conduction in the 3D network of neutral and charged domain walls in ErMnO3 . By combining tomographic microscopy techniques and finite element modeling, the contribution of domain walls within the bulk is clarified and the significance of curvature effects for the local conduction is shown down to the nanoscale. The findings provide insights into the propagation of electrical currents in domain wall networks, reveal additional degrees of freedom for their control, and provide quantitative guidelines for the design of domain-wall-based technology.
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Affiliation(s)
- Erik D Roede
- Department of Materials Science and Engineering, NTNU Norwegian University of Science and Technology, Trondheim, 7491, Norway
| | - Konstantin Shapovalov
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra, 08193, Spain
| | - Thomas J Moran
- Department of Materials Science and Engineering, University of Connecticut, Storrs, CT, 06269, USA
| | - Aleksander B Mosberg
- Department of Physics, NTNU Norwegian University of Science and Technology, Trondheim, 7491, Norway
- SuperSTEM, STFC Daresbury Laboratories, Keckwick Lane, Warrington, WA4 4AD, UK
| | - Zewu Yan
- Department of Physics, ETH Zurich, Zürich, 8093, Switzerland
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Edith Bourret
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Andres Cano
- Universite Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, Grenoble, France
| | - Bryan D Huey
- Department of Materials Science and Engineering, University of Connecticut, Storrs, CT, 06269, USA
| | | | - Dennis Meier
- Department of Materials Science and Engineering, NTNU Norwegian University of Science and Technology, Trondheim, 7491, Norway
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33
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Chen Y, Yuan X, Shan S, Zhang C, Liu R, Zhang X, Zhuang W, Chen Y, Xu Y, Zhang R, Wang X. Significant Reduction of the Dead Layers by the Strain Release in La 0.7Sr 0.3MnO 3 Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2022; 14:39673-39678. [PMID: 35984645 DOI: 10.1021/acsami.2c12899] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Great efforts have been devoted to exploring the emergent phenomena occurring in heterostructures of correlated oxides. However, the presence of both magnetic and electrical dead layers in functional oxide films generally obstructs the device functionalization and miniaturization. Here, we demonstrate an effective strategy to significantly reduce the thickness of dead layers in a prototypical correlated oxide system, La0.7Sr0.3MnO3 (LSMO) grown on LaAlO3 (LAO) substrates, via strain engineering by inserting a Sr3Al2O6 buffer layer with a different thickness at heterointerfaces. In this way, the thicknesses of the magnetic and electrical dead layers of LSMO films on the LAO substrates notably decrease from 8 to 4 unit cells and from 13 to 9 unit cells, respectively. Our results provide a convenient method to minimize or even eliminate the dead layers of correlated oxides through the interfacial strain engineering, which has potential applications in nanoscale oxide spintronic devices.
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Affiliation(s)
- Yongda Chen
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
| | - Xiao Yuan
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
| | - Siqi Shan
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
| | - Chong Zhang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
| | - Ruxin Liu
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
| | - Xu Zhang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
| | - Wenzhuo Zhuang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
| | - Yequan Chen
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
| | - Yongbing Xu
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
| | - Rong Zhang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
| | - Xuefeng Wang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
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34
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McCluskey CJ, Colbear MG, McConville JPV, McCartan SJ, Maguire JR, Conroy M, Moore K, Harvey A, Trier F, Bangert U, Gruverman A, Bibes M, Kumar A, McQuaid RGP, Gregg JM. Ultrahigh Carrier Mobilities in Ferroelectric Domain Wall Corbino Cones at Room Temperature. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2204298. [PMID: 35733393 DOI: 10.1002/adma.202204298] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/12/2022] [Revised: 06/13/2022] [Indexed: 06/15/2023]
Abstract
Recently, electrically conducting heterointerfaces between dissimilar band insulators (such as lanthanum aluminate and strontium titanate) have attracted considerable research interest. Charge transport and fundamental aspects of conduction have been thoroughly explored. Perhaps surprisingly, similar studies on conceptually much simpler conducting homointerfaces, such as domain walls, are not nearly so well developed. Addressing this disparity, magnetoresistance is herein reported in approximately conical 180° charged domain walls, in partially switched ferroelectric thin-film single-crystal lithium niobate. This system is ideal for such measurements: first, the conductivity difference between domains and domain walls is unusually large (a factor of 1013 ) and hence currents driven through the thin film, between planar top and bottom electrodes, are overwhelmingly channeled along the walls; second, when electrical contact is made to the top and bottom of the domain walls and a magnetic field is applied along their cone axes, then the test geometry mirrors that of a Corbino disk: a textbook arrangement for geometric magnetoresistance measurement. Data imply carriers with extremely high room-temperature Hall mobilities of up to ≈3700 cm2 V-1 s-1 . This is an unparalleled value for oxide interfaces (and for bulk oxides) comparable to mobilities in other systems seen at cryogenic, rather than at room, temperature.
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Affiliation(s)
- Conor J McCluskey
- School of Mathematics and Physics, Queen's University Belfast, Belfast, BT7 1NN, UK
| | - Matthew G Colbear
- School of Mathematics and Physics, Queen's University Belfast, Belfast, BT7 1NN, UK
| | - James P V McConville
- School of Mathematics and Physics, Queen's University Belfast, Belfast, BT7 1NN, UK
| | - Shane J McCartan
- School of Mathematics and Physics, Queen's University Belfast, Belfast, BT7 1NN, UK
| | - Jesi R Maguire
- School of Mathematics and Physics, Queen's University Belfast, Belfast, BT7 1NN, UK
| | - Michele Conroy
- Department of Physics & Bernal Institute, University of Limerick, Limerick, V94 T9PX, Ireland
| | - Kalani Moore
- Department of Physics & Bernal Institute, University of Limerick, Limerick, V94 T9PX, Ireland
| | - Alan Harvey
- Department of Physics & Bernal Institute, University of Limerick, Limerick, V94 T9PX, Ireland
| | - Felix Trier
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, Palaiseau, 91767, France
- Department of Energy Conversion and Storage, Technical University of Denmark, Kongens Lyngby, 2800, Denmark
| | - Ursel Bangert
- Department of Physics & Bernal Institute, University of Limerick, Limerick, V94 T9PX, Ireland
| | - Alexei Gruverman
- Department of Physics and Astronomy, University of Nebraska, Lincoln, NE, 68588, USA
| | - Manuel Bibes
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, Palaiseau, 91767, France
| | - Amit Kumar
- School of Mathematics and Physics, Queen's University Belfast, Belfast, BT7 1NN, UK
| | - Raymond G P McQuaid
- School of Mathematics and Physics, Queen's University Belfast, Belfast, BT7 1NN, UK
| | - J Marty Gregg
- School of Mathematics and Physics, Queen's University Belfast, Belfast, BT7 1NN, UK
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35
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Nonvolatile ferroelectric domain wall memory integrated on silicon. Nat Commun 2022; 13:4332. [PMID: 35882838 PMCID: PMC9325887 DOI: 10.1038/s41467-022-31763-w] [Citation(s) in RCA: 14] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/10/2021] [Accepted: 07/01/2022] [Indexed: 11/30/2022] Open
Abstract
Ferroelectric domain wall memories have been proposed as a promising candidate for nonvolatile memories, given their intriguing advantages including low energy consumption and high-density integration. Perovskite oxides possess superior ferroelectric prosperities but perovskite-based domain wall memory integrated on silicon has rarely been reported due to the technical challenges in the sample preparation. Here, we demonstrate a domain wall memory prototype utilizing freestanding BaTiO3 membranes transferred onto silicon. While as-grown BaTiO3 films on (001) SrTiO3 substrate are purely c-axis polarized, we find they exhibit distinct in-plane multidomain structures after released from the substrate and integrated onto silicon due to the collective effects from depolarizing field and strain relaxation. Based on the strong in-plane ferroelectricity, conductive domain walls with reading currents up to nanoampere are observed and can be both created and erased artificially, highlighting the great potential of the integration of perovskite oxides with silicon for ferroelectric domain wall memories. Integrating ferroelectric perovskite oxides on Si is highly desired for electronic applications but challenging. Here, the authors show emergent in-plane ferroelectricity and promising nonvolatile memories based on resistive domain wall in BaTiO3/Si.
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36
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Zhang WJ, Wang C, Jiang J, Jiang AQ. Fast Operations of Nonvolatile Ferroelectric Domain Wall Memory with Inhibited Space Charge Injection. ACS APPLIED MATERIALS & INTERFACES 2022; 14:32227-32235. [PMID: 35801654 DOI: 10.1021/acsami.2c05923] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The microampere-level domain wall currents in LiNbO3 single crystals have promising applications in nonvolatile ferroelectric domain wall random access memory and logic with high-density integration, ultrafast operation speeds, and almost unlimited switching cycles. For the memory commercialization, the improvements of the reliability and operation speed of the devices are challenging due to the high-field charge injection. The injected charge could compensate the domain-wall boundary charge that screens the domain switching field and reduces the domain wall current. In this work, two kinds of memory nanocells were fabricated on the surfaces of X-cut LiNbO3 single crystals to study the geometry-dependent charge injection. The striped memory cell due to the appearance of the size-driven reconstruction has a smaller coercive field than that of a clamped memory cell without relaxation of the lattice matching stress, which reduces low-frequency charge injection and increases the domain switching speed. At an operating voltage of 5 V, we observed a retention time of more than 1 week and an on/off current ratio of 2 × 104 for a striped-like cell, paving the route to integrate energy-efficient high-density domain wall memory in high reliability.
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Affiliation(s)
- Wen Jie Zhang
- State Key Laboratory of ASIC & System School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Chao Wang
- State Key Laboratory of ASIC & System School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Jun Jiang
- State Key Laboratory of ASIC & System School of Microelectronics, Fudan University, Shanghai 200433, China
| | - An Quang Jiang
- State Key Laboratory of ASIC & System School of Microelectronics, Fudan University, Shanghai 200433, China
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37
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Xiong YA, Gu ZX, Song XJ, Yao J, Pan Q, Feng ZJ, Du GW, Ji HR, Sha TT, Xiong RG, You YM. Rational Design of Molecular Ferroelectrics with Negatively Charged Domain Walls. J Am Chem Soc 2022; 144:13806-13814. [PMID: 35816081 DOI: 10.1021/jacs.2c04872] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Abstract
Ferroelectric domains and domain walls are unique characteristics of ferroelectric materials. Among them, charged domain walls (CDWs) are a special kind of peculiar microstructure that highly improve conductivity, piezoelectricity, and photovoltaic efficiency. Thus, CDWs are believed to be the key to ferroelectrics' future application in fields of energy, sensing, information storage, and so forth. Studies on CDWs are one of the most attractive directions in conventional inorganic ferroelectric ceramics. However, in newly emerged molecular ferroelectrics, which have advantages such as lightweight, easy preparation, simple film fabrication, mechanical flexibility, and biocompatibility, CDWs are rarely observed due to the lack of free charges. In inorganic ferroelectrics, doping is a traditional method to induce free charges, but for molecular ferroelectrics fabricated by solution processes, doping usually causes phase separation or phase transition, which destabilizes or removes ferroelectricity. To realize stable CDWs in molecular systems, we designed and synthesized an n-type molecular ferroelectric, 1-adamantanammonium hydroiodate. In this compound, negative charges are induced by defects in the I- vacancy, and CDWs can be achieved. Nanometer-scale CDWs that are stable at temperatures as high as 373 K can be "written" precisely by an electrically biased metal tip. More importantly, this is the first time that the charge diffusion of CDWs at variable temperatures has been investigated in molecular ferroelectrics. This work provides a new design strategy for n-type molecular ferroelectrics and may shed light on their future applications in flexible electronics, microsensors, and so forth.
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Affiliation(s)
- Yu-An Xiong
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing 211189, People's Republic of China
| | - Zhu-Xiao Gu
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing 211189, People's Republic of China
| | - Xian-Jiang Song
- Ordered Matter Science Research Center, Nanchang University, Nanchang 330031, People's Republic of China
| | - Jie Yao
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing 211189, People's Republic of China
| | - Qiang Pan
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing 211189, People's Republic of China
| | - Zi-Jie Feng
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing 211189, People's Republic of China
| | - Guo-Wei Du
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing 211189, People's Republic of China
| | - Hao-Ran Ji
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing 211189, People's Republic of China
| | - Tai-Ting Sha
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing 211189, People's Republic of China
| | - Ren-Gen Xiong
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing 211189, People's Republic of China.,Ordered Matter Science Research Center, Nanchang University, Nanchang 330031, People's Republic of China
| | - Yu-Meng You
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing 211189, People's Republic of China
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38
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Fernandez A, Acharya M, Lee HG, Schimpf J, Jiang Y, Lou D, Tian Z, Martin LW. Thin-Film Ferroelectrics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2108841. [PMID: 35353395 DOI: 10.1002/adma.202108841] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/02/2021] [Revised: 03/03/2022] [Indexed: 06/14/2023]
Abstract
Over the last 30 years, the study of ferroelectric oxides has been revolutionized by the implementation of epitaxial-thin-film-based studies, which have driven many advances in the understanding of ferroelectric physics and the realization of novel polar structures and functionalities. New questions have motivated the development of advanced synthesis, characterization, and simulations of epitaxial thin films and, in turn, have provided new insights and applications across the micro-, meso-, and macroscopic length scales. This review traces the evolution of ferroelectric thin-film research through the early days developing understanding of the roles of size and strain on ferroelectrics to the present day, where such understanding is used to create complex hierarchical domain structures, novel polar topologies, and controlled chemical and defect profiles. The extension of epitaxial techniques, coupled with advances in high-throughput simulations, now stands to accelerate the discovery and study of new ferroelectric materials. Coming hand-in-hand with these new materials is new understanding and control of ferroelectric functionalities. Today, researchers are actively working to apply these lessons in a number of applications, including novel memory and logic architectures, as well as a host of energy conversion devices.
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Affiliation(s)
- Abel Fernandez
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Megha Acharya
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Han-Gyeol Lee
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Jesse Schimpf
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Yizhe Jiang
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Djamila Lou
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Zishen Tian
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Lane W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
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39
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Abstract
The electronic conductivities of ferroelectric domain walls have been extensively explored over the past decade for potential nanoelectronic applications. However, the realization of logic devices based on ferroelectric domain walls requires reliable and flexible control of the domain-wall configuration and conduction path. Here, we demonstrate electric-field-controlled stable and repeatable on-and-off switching of conductive domain walls within topologically confined vertex domains naturally formed in self-assembled ferroelectric nano-islands. Using a combination of piezoresponse force microscopy, conductive atomic force microscopy, and phase-field simulations, we show that on-off switching is accomplished through reversible transformations between charged and neutral domain walls via electric-field-controlled domain-wall reconfiguration. By analogy to logic processing, we propose programmable logic gates (such as NOT, OR, AND and their derivatives) and logic circuits (such as fan-out) based on reconfigurable conductive domain walls. Our work might provide a potentially viable platform for programmable all-electric logic based on a ferroelectric domain-wall network with low energy consumption. Ferroelectric domain walls have been extensively explored for nanoelectronics, but the logic devices are still challenging. Here, the authors propose programmable logic gates and circuits based on electric-field controllable conductive domain walls.
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40
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Waqar M, Wu H, Chen J, Yao K, Wang J. Evolution from Lead-Based to Lead-Free Piezoelectrics: Engineering of Lattices, Domains, Boundaries, and Defects Leading to Giant Response. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2106845. [PMID: 34799944 DOI: 10.1002/adma.202106845] [Citation(s) in RCA: 18] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/30/2021] [Revised: 09/14/2021] [Indexed: 06/13/2023]
Abstract
Piezoelectric materials are known to mankind for more than a century, with numerous advancements made in both scientific understandings and practical applications. In the last two decades, in particular, the research on piezoelectrics has largely been driven by the constantly changing technological demand, and the drive toward a sustainable society. Hence, environmental-friendly "lead-free piezoelectrics" have emerged in the anticipation of replacing lead-based counterparts with at least comparable performance. However, there are still obstacles to be overcome for realizing this objective, while the efforts in this direction already seem to culminate. Therefore, novel structural strategies need to be designed to address these issues and for further breakthrough in this field. Here, various strategies to enhance piezoelectric properties in lead-free systems with fundamental and historical context, and from atomic to macroscopic scale, are explored. The main challenges currently faced in the transition from lead-based to lead-free piezoelectrics are identified and key milestones for future research in this field are suggested. These include: i) decoding the fundamental mechanisms; ii) large temperature-stable piezoresponse; and iii) fabrication-friendly and tailorable composition. Strategic insights and general guidelines for the synergistic design of new piezoelectric materials for obtaining a large piezoelectric response are also provided.
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Affiliation(s)
- Moaz Waqar
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117574, Singapore
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology, and Research), Singapore, 138634, Singapore
- Integrative Sciences and Engineering Programme, National University of Singapore, Singapore, 119077, Singapore
| | - Haijun Wu
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117574, Singapore
| | - Jingsheng Chen
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117574, Singapore
| | - Kui Yao
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology, and Research), Singapore, 138634, Singapore
| | - John Wang
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117574, Singapore
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41
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Scanning Probe Microscopy Investigation of Topological Defects. Symmetry (Basel) 2022. [DOI: 10.3390/sym14061098] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/27/2023] Open
Abstract
Symmetry lowering phase transitions in ferroelectrics, magnets, and materials with various other forms of inherent order lead to the formation of topological defects. Their non-trivial real-space topology is characterized by a topological charge, which represents the topological invariant. The study of topological defects in such materials has seen increased interest over the last decade. Among the methods used for their study, scanning probe microscopy (SPM) with its many variants has provided valuable new insight into these structures at the nanoscale. In this perspective, various approaches are discussed, and different techniques are compared with regard to their ability to investigate topological defect properties.
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42
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Wang J, Zhu R, Ma J, Yang H, Fan Y, Chen M, Sun Y, Gao P, Huang H, Zhang J, Ma J, Nan CW. Photoenhanced Electroresistance at Dislocation-Mediated Phase Boundary. ACS APPLIED MATERIALS & INTERFACES 2022; 14:18662-18670. [PMID: 35430815 DOI: 10.1021/acsami.1c25259] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Ferroelectric tunneling junctions have attracted intensive research interest due to their potential applications in high-density data storage and neural network computing. However, the prerequisite of an ultrathin ferroelectric tunneling barrier makes it a great challenge to simultaneously implement the robust polarization and negligible leakage current in a ferroelectric thin film, both of which are significant for ferroelectric tunneling junctions with reliable operating performance. Here, we observe a large tunneling electroresistance effect of ∼1.0 × 104% across the BiFeO3 nanoisland edge, where the intrinsic ferroelectric polarization of the nanoisland makes a major contribution to tuning the barrier height. This phenomenon is beneficial from the artificially designed tunneling barrier between the nanoscale top electrode and the inclined conducting phase boundary, which is located between the rhombohedral-island and tetragonal-film matrix and arranged with the dislocation array. More significantly, the tunneling electroresistance effect is further improved to ∼1.6 × 104% by the introduction of photoinduced carriers, which are separated by the flexoelectric field arising from the dislocations.
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Affiliation(s)
- Jing Wang
- Advanced Research Institute of Multidisciplinary Science, and School of Materials Science & Engineering, Beijing Institute of Technology, Beijing 100081, China
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Ruixue Zhu
- International Center for Quantum Materials, and Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China
| | - Ji Ma
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
- School of Material Science and Engineering, Kunming University of Science and Technology, Kunming, Yunnan 650093, China
| | - Huayu Yang
- Advanced Research Institute of Multidisciplinary Science, and School of Materials Science & Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Yuanyuan Fan
- Advanced Research Institute of Multidisciplinary Science, and School of Materials Science & Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Mingfeng Chen
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Yuanwei Sun
- International Center for Quantum Materials, and Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China
| | - Peng Gao
- International Center for Quantum Materials, and Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China
| | - Houbing Huang
- Advanced Research Institute of Multidisciplinary Science, and School of Materials Science & Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Jinxing Zhang
- Department of Physics, Beijing Normal University, Beijing 100875, China
| | - Jing Ma
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Ce-Wen Nan
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
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43
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O'Connell EN, Moore K, McFall E, Hennessy M, Moynihan E, Bangert U, Conroy M. TopoTEM: A Python Package for Quantifying and Visualizing Scanning Transmission Electron Microscopy Data of Polar Topologies. MICROSCOPY AND MICROANALYSIS : THE OFFICIAL JOURNAL OF MICROSCOPY SOCIETY OF AMERICA, MICROBEAM ANALYSIS SOCIETY, MICROSCOPICAL SOCIETY OF CANADA 2022; 28:1-9. [PMID: 35318910 DOI: 10.1017/s1431927622000435] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The exotic internal structure of polar topologies in multiferroic materials offers a rich landscape for materials science research. As the spatial scale of these entities is often subatomic in nature, aberration-corrected transmission electron microscopy (TEM) is the ideal characterization technique. Software to quantify and visualize the slight shifts in atomic placement within unit cells is of paramount importance due to the now routine acquisition of images at such resolution. In the previous ~decade since the commercialization of aberration-corrected TEM, many research groups have written their own code to visualize these polar entities. More recently, open-access Python packages have been developed for the purpose of TEM atomic position quantification. Building on these packages, we introduce the TEMUL Toolkit: a Python package for analysis and visualization of atomic resolution images. Here, we focus specifically on the TopoTEM module of the toolkit where we show an easy to follow, streamlined version of calculating the atomic displacements relative to the surrounding lattice and thus plotting polarization. We hope this toolkit will benefit the rapidly expanding field of topology-based nano-electronic and quantum materials research, and we invite the electron microscopy community to contribute to this open-access project.
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Affiliation(s)
- Eoghan N O'Connell
- Department of Physics, Bernal Institute, University of Limerick, Limerick, Ireland
| | - Kalani Moore
- Department of Physics, Bernal Institute, University of Limerick, Limerick, Ireland
| | - Elora McFall
- Department of Physics, Bernal Institute, University of Limerick, Limerick, Ireland
| | - Michael Hennessy
- Department of Physics, Bernal Institute, University of Limerick, Limerick, Ireland
| | - Eoin Moynihan
- Department of Physics, Bernal Institute, University of Limerick, Limerick, Ireland
| | - Ursel Bangert
- Department of Physics, Bernal Institute, University of Limerick, Limerick, Ireland
| | - Michele Conroy
- Department of Physics, Bernal Institute, University of Limerick, Limerick, Ireland
- Department of Materials, Faculty of Engineering, London Centre of Nanotechnology, Imperial College London, London, UK
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44
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High-density switchable skyrmion-like polar nanodomains integrated on silicon. Nature 2022; 603:63-67. [PMID: 35236971 DOI: 10.1038/s41586-021-04338-w] [Citation(s) in RCA: 38] [Impact Index Per Article: 19.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/24/2021] [Accepted: 12/10/2021] [Indexed: 11/08/2022]
Abstract
Topological domains in ferroelectrics1-5 have received much attention recently owing to their novel functionalities and potential applications6,7 in electronic devices. So far, however, such topological polar structures have been observed only in superlattices grown on oxide substrates, which limits their applications in silicon-based electronics. Here we report the realization of room-temperature skyrmion-like polar nanodomains in lead titanate/strontium titanate bilayers transferred onto silicon. Moreover, an external electric field can reversibly switch these nanodomains into the other type of polar texture, which substantially modifies their resistive behaviours. The polar-configuration-modulated resistance is ascribed to the distinct band bending and charge carrier distribution in the core of the two types of polar texture. The integration of high-density (more than 200 gigabits per square inch) switchable skyrmion-like polar nanodomains on silicon may enable non-volatile memory applications using topological polar structures in oxides.
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Yang W, Tian G, Fan H, Zhao Y, Chen H, Zhang L, Wang Y, Fan Z, Hou Z, Chen D, Gao J, Zeng M, Lu X, Qin M, Gao X, Liu JM. Nonvolatile Ferroelectric-Domain-Wall Memory Embedded in a Complex Topological Domain Structure. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2107711. [PMID: 34989455 DOI: 10.1002/adma.202107711] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/26/2021] [Revised: 12/18/2021] [Indexed: 06/14/2023]
Abstract
The discovery and precise manipulation of atomic-size conductive ferroelectric domain walls offers new opportunities for a wide range of prospective electronic devices, and the emerging field of walltronics. Herein, a highly stable and fatigue-resistant nonvolatile memory device is demonstrated, which is based on deterministic creation and erasure of conductive domain walls that are geometrically confined in a topological domain structure. By introducing a pair of delicately designed coaxial electrodes onto the epitaxial BiFeO3 film, a center-type quadrant topological domain with conductive charged domain walls can be easily created. More importantly, reversible switching of the quadrant domain between the convergent state with highly conductive confined walls and the divergent state with insulating confined walls can be realized, resulting in an apparent resistance change with a large on/off ratio of >104 and a technically preferred readout current (up to 40 nA). Owing to restrictions from the clamped quadrant ferroelastic domain, the device exhibits excellent restoration repeatability over 108 cycles and a long retention of over 12 days (>106 s). These results provide a new pathway toward high-performance ferroelectric-domain-wall memory, which may spur extensive interest in exploring the immense potential in the emerging field of walltronics.
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Affiliation(s)
- Wenda Yang
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China
| | - Guo Tian
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China
| | - Hua Fan
- The Department of Physics, Southern University of Science and Technology, Shenzhen, 518000, China
| | - Yue Zhao
- The Department of Physics, Southern University of Science and Technology, Shenzhen, 518000, China
| | - Hongying Chen
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China
| | - Luyong Zhang
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China
| | - Yadong Wang
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China
| | - Zhen Fan
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China
| | - Zhipeng Hou
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China
| | - Deyang Chen
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China
| | - Jinwei Gao
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China
| | - Min Zeng
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China
| | - Xubing Lu
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China
| | - Minghui Qin
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China
| | - Xingsen Gao
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China
| | - Jun-Ming Liu
- Laboratory of Solid-State Microstructures, Nanjing University, Nanjing, 210093, China
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Wang H, Wu H, Chi X, Li Y, Zhou C, Yang P, Yu X, Wang J, Chow GM, Yan X, Pennycook SJ, Chen J. Large-Scale Epitaxial Growth of Ultralong Stripe BiFeO 3 Films and Anisotropic Optical Properties. ACS APPLIED MATERIALS & INTERFACES 2022; 14:8557-8564. [PMID: 35129325 DOI: 10.1021/acsami.1c22248] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The controlled synthesis of large-scale ferroelectric domains with high uniformity is crucial for practical applications in next-generation nanoelectronics on the basis of their intriguing properties. Here, ultralong and highly uniform stripe domains in (110)-oriented BiFeO3 thin films are large-area synthesized through a pulsed laser deposition technique. Utilizing scanning transmission electron microscopy and piezoresponse force microscopy, we verified that the ferroelectric domains have one-dimensional 109° domains and the length of a domain is up to centimeter scale. More importantly, the ferroelectric displacement is directly determined on atomic-scale precision, further confirming the domain structure. We find that the unique one-dimensional ferroelectric domain significantly enhances the optical anisotropy. Furthermore, we demonstrate that the purely parallel domain patterns can be used to control photovoltaic current. These ultralong ferroelectric domains can be patterned into various functional devices, which may inspire research efforts to explore their properties and various applications.
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Affiliation(s)
- Han Wang
- Department of Materials Science and Engineering, National University of Singapore 117575, Singapore
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| | - Haijun Wu
- Department of Materials Science and Engineering, National University of Singapore 117575, Singapore
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
| | - Xiao Chi
- Singapore Synchrotron Light Source (SSLS), National University of Singapore 117603, Singapore
| | - Yangyang Li
- Department of Materials Science and Engineering, National University of Singapore 117575, Singapore
| | - Chenghang Zhou
- Department of Materials Science and Engineering, National University of Singapore 117575, Singapore
| | - Ping Yang
- Singapore Synchrotron Light Source (SSLS), National University of Singapore 117603, Singapore
| | - Xiaojiang Yu
- Singapore Synchrotron Light Source (SSLS), National University of Singapore 117603, Singapore
| | - John Wang
- Department of Materials Science and Engineering, National University of Singapore 117575, Singapore
| | - Gan-Moog Chow
- Department of Materials Science and Engineering, National University of Singapore 117575, Singapore
| | - Xiaobing Yan
- College of Electron and Information Engineering, Hebei University, Baoding 071002, China
| | - Stephen John Pennycook
- Department of Materials Science and Engineering, National University of Singapore 117575, Singapore
| | - Jingsheng Chen
- Department of Materials Science and Engineering, National University of Singapore 117575, Singapore
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Rix J, Rüsing M, Galli R, Golde J, Reitzig S, Eng LM, Koch E. Brillouin and Raman imaging of domain walls in periodically-poled 5%-MgO:LiNbO3. OPTICS EXPRESS 2022; 30:5051-5062. [PMID: 35209476 DOI: 10.1364/oe.447554] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/03/2021] [Accepted: 01/05/2022] [Indexed: 06/14/2023]
Abstract
Recently, ferroelectric domain walls (DWs) have attracted considerable attention due to their intrinsic topological effects and their huge potential for optoelectronic applications. In contrast, many of the underlying physical properties and phenomena are not well characterized. In this regard, analyzing the vibrational properties, e.g. by Raman spectroscopy, provides direct access to the various local material properties, such as strains, defects or electric fields. While the optical phonon spectra of DWs have been widely investigated in the past, no reports on the acoustic phonon properties of DWs exist. In this work, we present a joint Raman and Brillouin visualization of ferroelectric DWs in the model ferroelectric lithium niobate. This is possible by using a combined Raman and virtually imaged phased array Brillouin setup. Here, we show that DWs can be visualized via frequency shifts observed in the acoustic phonons, as well. The observed contrast then is qualitatively explained by models adapted from Raman spectroscopy. This work, hence, provides a novel route to study ferroelectric DWs and their intrinsic mechanical properties.
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Kim YJ, Lee C, Park HS, Yeo Y, Safarina GA, Le DD, Kim JG, Bang D, Cho BG, Park JH, Ko KT, Koo TY, Shim JH, Yang CH. Orbital Order Melting at Reduced Dimensions. NANO LETTERS 2022; 22:1059-1066. [PMID: 35084865 DOI: 10.1021/acs.nanolett.1c04117] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The orbital degree of freedom, strongly coupled with the lattice and spin, is an important factor when designing correlated functions. Whether the long-range orbital order is stable at reduced dimensions and, if not, what the critical thickness is remains a tantalizing question. Here, we report the melting of orbital ordering, observed by controlling the dimensionality of the canonical eg1 orbital system LaMnO3. Epitaxial films are synthesized with vertically aligned orbital ordering planes on an orthorhombic substrate, so that reducing film thickness changes the two-dimensional planes into quasi-one-dimensional nanostrips. The orbital order appears to be suppressed below the critical thickness of about six unit cells by changing the characteristic phonon modes and making the Mn d orbital more isotropic. Density functional calculations reveal that the electronic energy instability induced by bandwidth narrowing via the dimensional crossover and the interfacial effect causes the absence of orbital order in the ultrathin thickness.
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Affiliation(s)
- Yong-Jin Kim
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Yuseong-gu, Daejeon 34141, Republic of Korea
- Center for Lattice Defectronics, KAIST, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Changhoon Lee
- Department of Chemistry, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
- Department of Physics, POSTECH, Pohang 37673, Republic of Korea
- MPPHC-CPM, Max Planck POSTECH/Korea Research Initiative (MPK), Pohang 37673, Republic of Korea
| | - Heung-Sik Park
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Yuseong-gu, Daejeon 34141, Republic of Korea
- Center for Lattice Defectronics, KAIST, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Youngki Yeo
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Yuseong-gu, Daejeon 34141, Republic of Korea
- Center for Lattice Defectronics, KAIST, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Giovanni Annur Safarina
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Yuseong-gu, Daejeon 34141, Republic of Korea
- Center for Lattice Defectronics, KAIST, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Duc Duy Le
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Yuseong-gu, Daejeon 34141, Republic of Korea
- Center for Lattice Defectronics, KAIST, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Jeong-Gyu Kim
- Department of Physics, POSTECH, Pohang 37673, Republic of Korea
- MPPHC-CPM, Max Planck POSTECH/Korea Research Initiative (MPK), Pohang 37673, Republic of Korea
| | - Daehyeon Bang
- Department of Physics, POSTECH, Pohang 37673, Republic of Korea
- MPPHC-CPM, Max Planck POSTECH/Korea Research Initiative (MPK), Pohang 37673, Republic of Korea
| | - Byeong-Gwan Cho
- Pohang Accelerator Laboratory, POSTECH, Pohang 37673, Republic of Korea
| | - Jae-Hoon Park
- Department of Physics, POSTECH, Pohang 37673, Republic of Korea
- MPPHC-CPM, Max Planck POSTECH/Korea Research Initiative (MPK), Pohang 37673, Republic of Korea
| | - Kyung-Tae Ko
- MPPHC-CPM, Max Planck POSTECH/Korea Research Initiative (MPK), Pohang 37673, Republic of Korea
- Korea Basic Science Institute, Daejeon 34133, Republic of Korea
| | - Tae Yeong Koo
- Pohang Accelerator Laboratory, POSTECH, Pohang 37673, Republic of Korea
| | - Ji Hoon Shim
- Department of Chemistry, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Chan-Ho Yang
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Yuseong-gu, Daejeon 34141, Republic of Korea
- Center for Lattice Defectronics, KAIST, Yuseong-gu, Daejeon 34141, Republic of Korea
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Sando D. Strain and orientation engineering in ABO 3perovskite oxide thin films. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:153001. [PMID: 35042194 DOI: 10.1088/1361-648x/ac4c61] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/15/2021] [Accepted: 01/18/2022] [Indexed: 06/14/2023]
Abstract
Perovskite oxides with chemical formula ABO3are widely studied for their properties including ferroelectricity, magnetism, strongly correlated physics, optical effects, and superconductivity. A thriving research direction using such materials is through their integration as epitaxial thin films, allowing many novel and exotic effects to be discovered. The integration of the thin film on a single crystal substrate, however, can produce unique and powerful effects, and can even induce phases in the thin film that are not stable in bulk. The substrate imposed mechanical boundary conditions such as strain, crystallographic orientation, octahedral rotation patterns, and symmetry can also affect the functional properties of perovskite films. Here, the author reviews the current state of the art in epitaxial strain and orientation engineering in perovskite oxide thin films. The paper begins by introducing the effect of uniform conventional biaxial strain, and then moves to describe how the substrate crystallographic orientation can induce symmetry changes in the film materials. Various material case studies, including ferroelectrics, magnetically ordered materials, and nonlinear optical oxides are covered. The connectivity of the oxygen octahedra between film and substrate depending on the strain level as well as the crystallographic orientation is then discussed. The review concludes with open questions and suggestions worthy of the community's focus in the future.
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Affiliation(s)
- Daniel Sando
- School of Materials Science and Engineering, UNSW Sydney, Kensington, 2052, Australia
- ARC Centre of Excellence in Future Low Energy Electronics Technologies (FLEET), UNSW Sydney, Kensington, 2052, Australia
- Mark Wainwright Analytical Centre, UNSW Sydney, Kensington, 2052, Australia
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Guan Z, Zhao Y, Wang X, Zhong N, Deng X, Zheng Y, Wang J, Xu D, Ma R, Yue F, Cheng Y, Huang R, Xiang P, Wei Z, Chu J, Duan C. Electric-Field-Induced Room-Temperature Antiferroelectric-Ferroelectric Phase Transition in van der Waals Layered GeSe. ACS NANO 2022; 16:1308-1317. [PMID: 34978807 DOI: 10.1021/acsnano.1c09183] [Citation(s) in RCA: 13] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Searching van der Waals ferroic materials that can work under ambient conditions is of critical importance for developing ferroic devices at the two-dimensional limit. Here we report the experimental discovery of electric-field-induced reversible antiferroelectric (AFE) to ferroelectric (FE) transition at room temperature in van der Waals layered α-GeSe, employing Raman spectroscopy, transmission electron microscopy, second-harmonic generation, and piezoelectric force microscopy consolidated by first-principles calculations. An orientation-dependent AFE-FE transition provides strong evidence that the in-plane (IP) polarization vector aligns along the armchair rather than zigzag direction in α-GeSe. In addition, temperature-dependent Raman spectra showed that the IP polarization could sustain up to higher than 700 K. Our findings suggest that α-GeSe, which is also a potential ferrovalley material, could be a robust building block for creating artificial 2D multiferroics at room temperature.
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Affiliation(s)
- Zhao Guan
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
| | - Yifeng Zhao
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
| | - Xiaoting Wang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Ni Zhong
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
| | - Xing Deng
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
| | - Yunzhe Zheng
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
| | - Jinjin Wang
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
| | - Dongdong Xu
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
| | - Ruru Ma
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
| | - Fangyu Yue
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
| | - Yan Cheng
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
| | - Rong Huang
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
| | - Pinghua Xiang
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Junhao Chu
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
| | - Chungang Duan
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
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