Conduction at domain walls in oxide multiferroics

Ferroelectric topologies in BaTiO3 nanomembranes for light field manipulation

Ferroelectric topological textures in oxides exhibit exotic dipole-moment configurations that would be ideal for nonlinear spatial light field manipulation. However, conventional ferroelectric polar topologies are spatially confined to the nanoscale, resulting in a substantial size mismatch with laser modes. Here we report a dome-shaped ferroelectric topology with micrometre-scale lateral dimensions using nanometre-thick freestanding BaTiO3 membranes and demonstrate its feasibility for spatial light field manipulation. The dome-shaped topology results from a radial flexoelectric field created through anisotropic lattice distortion, which, in turn, generates centre-convergent microdomains. The interaction between the continuous curling of dipoles and light promotes the conversion of circularly polarized waves into vortex light fields through nonlinear spin-to-orbit angular momentum conversion. Further dynamic manipulation of vortex light fields can also be achieved by thermal and electrical switching of the polar topology. Our work highlights the potential for other ferroelectric polar topologies in light field manipulation.

Fe Atomic Monolayer in a Coherent Interface: Electrostatic Potential-Induced Segregation and Interfacial Magnetism

Interfaces and boundaries often trap various impurities so that they play a crucial role in tailoring the mechanical and physical properties of materials and devices. Due to the perfect lattice matching, impurity segregation at coherent interfaces and the corresponding effects on material properties have rarely been reported. In this study, we demonstrate the segregation of an Fe atomic monolayer in a Sr3MgSi2O8/SrTiO3 coherent heterointerface and the resulting interfacial magnetism by combining aberration-corrected transmission electron microscopy, magnetic force microscopy, and first-principles calculations. It is revealed that the segregated Fe atomic monolayer consists of Fe3+ ions and exhibits ferromagnetism. The Sr3MgSi2O8/SrTiO3 coherent interface shows no strain concentration with the Fe segregation driven by the minimization of interfacial electrostatic potential. These findings could deepen our understanding of impurity segregation at coherent interfaces. The as-received interfacial magnetism at the coherent interface is expected to play important roles in applications of future spintronic nanodevices.

Reversible shuffle twinning yields anisotropic tensile superelasticity in ceramic GeSe

Superelasticity is a reversible, nonlinear strain response to stress stimuli beyond the linear elastic regime. It is commonly associated with a martensitic transformation in its host material, usually a metal or polymer. Except for the ceramic crystals ZrO2 and BaTiO3, which show superelasticity under compressive stress, inorganic materials with covalent or ionic bonding usually do not exhibit superelastic behaviour because of large energy barriers for structural transitions. Here we show anisotropic tensile superelasticity in the ceramic crystal GeSe, which originates from reversible shuffle twinning. Through in situ transmission electron microscopy mechanical testing, we trace the evolution from a linear elastic behaviour to a nonlinear superelastic plateau in stress-strain curves and concurrently observe the generation of stripy-shaped twin domains along the <110> direction. Density functional theory calculations paired with molecular dynamics simulations reveal a release of elastic potential energy upon the shuffle twinning process from a Z-shaped to an anti-Z-shaped bond configuration, which is responsible for the observed tensile superelasticity. This mechanism makes the observed superelasticity highly directional. In line with the anisotropic Young's modulus and Poisson's ratio in GeSe, experiments confirm that superelastic response emerges only when we apply strain along or close to the zigzag direction. We expect to find similar anisotropic superelasticity in ceramic semiconductors with similar crystal structure such as SnSe, SnS or GeS.

Observation and manipulation of two-dimensional topological polar texture confined in moiré interface

Topological polar structures in ferroelectric thin films have become an emerging research field for exotic phenomena. Due to the prerequisite of the intricate balance among the intrinsic dipolar anisotropy, the imposed electric and mechanical boundary, the topological polar domains are predominantly formed within complex oxides. Here, combining the microscopic polarization measurement via Piezoresponse Force Microscopy and the atomic displacement mapping via Scanning Transmission Electron Microscopy, we report the direct observation of atomically thin topological polar textures in twisted boron nitride system, which is well confined at the twisted interface. Leveraging the advantages of the sliding switching mechanism and atomically thin nature, we demonstrate nonvolatile manipulation of the topological polar textures, which is crucial for potential applications. This result provides opportunities to create truly 2D topological polar textures with dynamical controllability, which would render the exploration on the previously unknown physical phenomena and functional devices feasible.

Dynamic regulation of ferroelectric polarization using external stimuli for efficient water splitting and beyond

Establishing and regulating the ferroelectric polarization in ferroelectric nano-scale catalysts has been recognized as an emerging strategy to advance water splitting reactions, with the merits of improved surface charge density, high charge transfer rate, increased electronic conductivity, the creation of real active sites, and optimizing the chemisorption energy. As a result, engineering and tailoring the ferroelectric polarization induced internal electric field provides significant opportunities to improve the surface and electronic characteristics of catalysts, thereby enhancing the water splitting reaction kinetics. In this review, an interdisciplinary and comprehensive summary of recent advancements in the construction, characterization, engineering and regulation of the polarization in ferroelectric-based catalysts for water splitting is provided, by exploiting a variety of external stimuli. This review begins with a detailed overview of the classification, benefits, and identification methodologies of the ferroelectric polarization induced internal electric field; this offers significant insights for an in-depth analysis of ferroelectric-based catalysts. Subsequently, we explore the underlying structure-activity relationships for regulating the ferroelectric polarization using a range of external stimuli which include mechanical, magnetic, and thermal fields to achieve efficient water splitting, along with a combination of two or more fields. The review then highlights emerging strategies for multi-scale design and theoretical prediction of the relevant factors to develop highly promising ferroelectric catalysts for efficient water splitting. Finally, we present the challenges and perspectives on the potential research avenues in this fascinating and new field. This review therefore delivers an in-depth examination of the strategies to engineer the ferroelectric polarization for the next-generation of water electrolysis devices, systems and beyond.

Position-Sensitive Domain-by-Domain Switchable Ferroelectric Memristor

Domain-wall electronics based on the tunable transport in reconfigurable ferroic domain interfaces offer a promising platform for in-memory computing approaches and reprogrammable neuromorphic circuits. While conductive domain walls have been discovered in many materials, progress in the field is hindered by high-voltage operations, stability of the resistive states and limited control over the domain wall dynamics. Here, we show nonvolatile memristive functionalities based on precisely controllable conductive domain walls in tetragonal Pb(Zr,Ti)O3 thin films within a two-terminal parallel-plate capacitor geometry. Individual submicron domains can be manipulated selectively by position-sensitive low-voltage operations to address distinct resistive states with nanoampere-range conduction readout. Quantitative phase-field simulations reveal a complex pattern of interpenetrating a- and c-domain associated with the formation of 2D conducting layers at the intertwined regions and the emergence of 3D percolation channels of extraordinary high conductivity. Subnanometer resolution polarization mapping experimentally proves the existence of such extensive segments of charged tail-to-tail domain walls with unconventional structure at the ferroelastic-ferroelectric domain boundaries.

Imaging Domain Walls in van der Waals Ferroelectrics Using Tip-Enhanced Second Harmonic Generation

van der Waals ferroelectrics have captured significant interest for applications in novel memory and neuromorphic computing devices. Within these materials, interfaces between regions of different ferroelectric polarizations (i.e., domain walls) exhibit distinctive behaviors. Characterization of these behaviors remains a challenge, as domain wall thickness resides at the nanoscale. Using tip-enhanced second harmonic generation (TESHG), we demonstrate nanoscale imaging of domain walls in 2D ferroelectric α-In2Se3. With a narrow-band near-IR laser, we take advantage of high-wavelength, off-resonant signal enhancement to generate robust and reproducible TESHG. A 16 nm spatial resolution is achieved, and we identify spectral features suggesting that nonlocal effects from domain walls persist nanometers into adjacent domains.

Bifunctional Design of Ferroelectric-Order and Band-Engineering in Cu:KTN Crystal for Extended Self-Powered Photoelectric Response

Photoelectric conversion in ferroelectric crystals can support many important applications in modern on-chip technology, but suffering from two problems, low responsive current and narrow responsive range. Especially, wide-gap ferroelectric oxides are only active at short-wavelength ultraviolet region with weak photocurrent at nanoampere levels. Here, a bifunctional design strategy of ferroelectric-order and electronic-band to improve the photocurrent and extend the responsive range simultaneously, is proposed. In a Cu-doped KTa1- xNbxO3 (KTN) perovskite crystal, a conductive channel is constructed by "head-to-head" ferroelectric domains, associated with the emergence of micrometer-scale supercells. In addition, the introduction of Cu+ ion can induce defect levels, thus extending the responsive range beyond the inherent absorption of pure KTN. Through rational device optimization, a record self-powered responsivity of 5.23 mA W-1 is realized in Cu:KTN photodetector, which is two orders of magnitude higher than undoped KTN crystal. The temperature-dependent light diffraction and photocurrent show that the ferroelectric-order is dominated in this photoresponse behavior. Moreover, Cu:KTN detector is active in the broadband range from 390 to 1030 nm, covering ultraviolet, visible, and near-infrared regions. This work provides an effective method for the design of next-generation self-powered photodetectors with ultrahigh responsivity and ultrawide responsive range.

On-demand nanoengineering of in-plane ferroelectric topologies

Hierarchical assemblies of ferroelectric nanodomains, so-called super-domains, can exhibit exotic morphologies that lead to distinct behaviours. Controlling these super-domains reliably is critical for realizing states with desired functional properties. Here we reveal the super-switching mechanism by using a biased atomic force microscopy tip, that is, the switching of the in-plane super-domains, of a model ferroelectric Pb0.6Sr0.4TiO3. We demonstrate that the writing process is dominated by a super-domain nucleation and stabilization process. A complex scanning-probe trajectory enables on-demand formation of intricate centre-divergent, centre-convergent and flux-closure polar structures. Correlative piezoresponse force microscopy and optical spectroscopy confirm the topological nature and tunability of the emergent structures. The precise and versatile nanolithography in a ferroic material and the stability of the generated structures, also validated by phase-field modelling, suggests potential for reliable multi-state nanodevice architectures and, thereby, an alternative route for the creation of tunable topological structures for applications in neuromorphic circuits.

Atomic-Scale Characterization of 180° Conductive Domain Walls in PbZr0.1Ti0.9O3

Conductive domain walls (DWs) in ferroic materials have emerged as promising candidates for applications in nanoelectronics due to their unique properties such as high conductivity and nonvolatility. In this study, we investigate the atomic structure and conductivity of nominally neutral 180° DWs artificially created in an epitaxial thin film of tetragonal PbZr0.1Ti0.9O3. Using piezoresponse force microscopy and scanning transmission electron microscopy, we elucidate the complex structure of these 180° DWs and their coupling with ferroelastic domains, revealing that they exhibit a complex structure due to the strain-mediated interplay with the ferroelastic domains. Our results demonstrate that the 180° DWs conductivity is associated with the emergence of polar discontinuities, including the formation of tail-to-tail charged segments, which has been further confirmed by electron energy loss spectroscopy. Additionally, we investigated the long-term performance of these domain boundaries, demonstrating their unique mobility and structural stability. Our findings provide insights into the atomic-scale mechanisms that turn nominally neutral DWs into highly conductive channels, paving the way for their use in advanced nanoelectronic devices.

Stacking selected polarization switching and phase transition in vdW ferroelectric α-In2Se3 junction devices

The structure and dynamics of ferroelectric domain walls are essential for polarization switching in ferroelectrics, which remains relatively unexplored in two-dimensional ferroelectric α-In2Se3. Interlayer interactions engineering via selecting the stacking order in two-dimensional materials allows modulation of ferroelectric properties. Here, we report stacking-dependent ferroelectric domain walls in 2H and 3R stacked α-In2Se3, elucidating the resistance switching mechanism in ferroelectric semiconductor-metal junction devices. In 3R α-In2Se3, the in-plane movement of out-of-plane ferroelectric domain walls yield a large hysteresis window. Conversely, 2H α-In2Se3 devices favor in-plane domain walls and out-of-plane domain wall motion, producing a small hysteresis window. High electric fields induce a ferro-paraelectric phase transition of In2Se3, where 3R In2Se3 reaches the transition through intralayer atomic gliding, while 2H In2Se3 undergoes a complex process comprising intralayer bond dissociation and interlayer bond reconstruction. Our findings demonstrate tunable ferroelectric properties via stacking configurations, offering an expanded dimension for material engineering in ferroelectric devices.

Protonation-Driven Polarization Retention Failure in Nano-Columnar Lead-Free Ferroelectric Thin Films

Understanding microscopic mechanisms of polarization retention characteristics in ferroelectric thin films is of great significance for exploring unusual physical phenomena inaccessible in the bulk counterparts and for realizing thin-film-based functional electronic devices. Perovskite (K,Na)NbO3 is an excellent class of lead-free ferroelectric oxides attracting tremendous interest thanks to its potential applications to nonvolatile memory and eco-friendly energy harvester/storage. Nonetheless, in-depth investigation of ferroelectric properties of (K,Na)NbO3 films and the following developments of nano-devices are limited due to challenging thin-film fabrication associated with nonstoichiometry by volatile K and Na atoms. Herein, ferroelectric (K,Na)NbO3 films of which the atomic-level geometrical structures strongly depend on thickness-dependent strain relaxation are epitaxially grown. Nanopillar crystal structures are identified in fully relaxed (K,Na)NbO3 films to the bulk states representing a continuous reduction of switchable polarization under air environments, that is, polarization retention failures. Protonation by water dissociation is responsible for the humidity-induced retention loss in nano-columnar (K,Na)NbO3 films. The protonation-driven polarization retention failure originates from domain wall pinning by the accumulation of mobile hydrogen ions at charged domain walls for effective screening of polarization-bound charges. Conceptually, the results will be utilized for rational design to advanced energy materials such as photo-catalysts enabling ferroelectric tuning of water splitting.

First Principles Study of Bismuth Vacancy Formation in (111)-Strained BiFeO3

Epitaxial strain is known to significantly influence the structural and functional properties of oxide thin films. However, its impact on point defect concentration has been less explored. Due to the challenges in experimentally measuring thin-film stoichiometry, computational studies become crucial. In this work, we use first-principles calculations based on density functional theory to investigate the formation and stability of Bi vacancies and Bi-O vacancy pairs in BiFeO3 (BFO) under (111) epitaxial strain. Our results demonstrate that compressive strain (-4%) decreases the formation enthalpy of Bi vacancies by 0.88 eV, whereas tensile strain (4%) increases it by 0.39 eV. Out-of-plane (OP) Bi-O vacancy pairs exhibit enhanced stability under both compressive and tensile strain, with formation enthalpy reductions of 1.49 eV and 1.05 eV, respectively. In contrast, in-plane (IP) vacancy pairs are stabilized under compressive strain but are insensitive to tensile strain. Finally, we discuss how these findings influence Bi stoichiometry during thin-film growth and the role of local strain fields in the formation of conducting domain walls.

Mobile intrinsic point defects for conductive neutral domain walls in LiNbO3

Conductive ferroelectric domain walls (DWs) hold great promise for neuromorphic nanoelectronics as they can contribute to realize multi-level diodes and nanoscale memristors. Point defects accumulating at DWs will change the local electrical transport properties. Hence, local, inter-switchable n- and p-type conductivity at DWs can be achieved through point defect population control. Here, we study the impact of point defects on the electronic structure at neutral domain walls in LiNbO3 by density functional theory (DFT). Segregation of Li and O vacancies was found to be energetically favourable at neutral DWs, implying that charge-compensating electrons or holes can give rise to n- or p-type conductivity. Changes in the electronic band gap and defect transition levels are discussed with respect to local property engineering, opening the pathway for reversible tuning between n- and p-type conduction at neutral ferroelectric DWs. Specifically, the high Curie temperature of LiNbO3 and the significant calculated mobility of O and Li vacancies suggest that thermal annealing and applied electric fields can be used experimentally to control point defect populations, and thus enable rewritable pn-junctions.

Ferroelectric polarization and magnetic structure at domain walls in a multiferroic film

Domain walls affect significantly ferroelectric and magnetic properties of magnetoelectric multiferroics. The stereotype is that the ferroelectric polarization will reduce at the domain walls due to the incomplete shielding of depolarization field or the effects of gradient energy. By combining transmission electron microscopy and first-principles calculations, we demonstrate that the ferroelectric polarization of tail-to-tail 180° domain walls in ε-Fe2O3 is regulated by the bound charge density. A huge enhancement (43%) of ferroelectric polarization is observed in the type I domain wall with a low bound charge density, while the ferroelectric polarization is reduced to almost zero at the type II domain wall with a high bound charge density. The magnetic coupling across the type I and type II ferroelectric domain walls are antiferromagnetic and ferromagnetic, respectively. Revealing mechanisms for enhancing ferroelectric polarization and magnetic behaviors at ferroelectric domain walls may promote the fundamental research and potential applications of magnetoelectric multiferroics.

Optical Control of In-Plane Domain Configuration and Domain Wall Motion in Ferroelectric and Ferroelastic Materials

The sensitivity of ferroelectric domain walls to external stimuli makes them functional entities in nanoelectronic devices. Specifically, optically driven domain reconfiguration with in-plane polarization is advantageous and thus is highly sought. Here, we show the existence of in-plane polarized subdomains imitating a single domain state and reversible optical control of its domain wall movement in a single-crystal of ferroelectric BaTiO3. Similar optical control in the domain configuration of nonpolar ferroelastic material indicates that long-range ferroelectric polarization is not essential for the optical control of domain wall movement. Instead, flexoelectricity is found to be an essential ingredient for the optical control of the domain configuration, and hence, ferroelastic materials would be another possible candidate for nanoelectronic device applications.

High-Performance LiNbO3 Domain Wall Memory Devices with Enhanced Selectivity via Optimized Metal-Semiconductor Contact

Lithium niobate (LiNbO3) single-crystal nanodevices featuring elevated readout domain wall currents exhibit significant potential for integrated circuits in memory computing applications. Nevertheless, challenges stem from suboptimal electrode-LiNbO3 single crystal contact characteristics, which impact the stability of high currents within these devices. In this work, we concentrate on augmenting the domain wall current by refining the fabrication processes of domain wall random access memory (DWRAM). Each LiNbO3 domain wall nanodevice was fabricated using a self-aligned process. Device performance was significantly enhanced by introducing a 10 nm interlayer between the LiNbO3 and Cu electrodes. A comparative analysis of electrical properties was conducted on devices with interlayers made of chromium (Cr) and titanium (Ti), as well as devices without interlayers. After the introduction of the Ti interlayer, the device's coercive voltage demonstrated an 82% reduction, while the current density showed a remarkable 94-fold increase. A 100 nm sized device with the Ti interlayer underwent positive down-negative up pulse testing, demonstrating a writing time of 82 ns at 8 V and an erasing time of 12 μs at -9 V. These operating speeds are significantly faster than those of devices without interlayers. Moreover, the enhanced devices exhibited symmetrical domain switching hysteresis loops with retention times exceeding 106 s. Notably, the coercive voltage (Vc) dispersion remained narrow after more than 1000 switching cycles. At an elevated temperature of 400 K, the device's on/off ratio was maintained at 105. The device's embedded selector demonstrated an ultrahigh selectivity (>106) across various reading voltages. These results underscore the viability of high-density nanoscale integration of ferroelectric domain wall memory.

The Investigation of Neuromimetic Dynamics in Ferroelectrics via In Situ TEM

The core task of neuromorphic devices is to effectively simulate the behavior of neurons and synapses. Based on the functionality of ferroelectric domains with the advantages of low power consumption and high-speed response, great progress has been made in realizing neuromimetic behaviors such as ferroelectric synaptic devices. However, the correlation between the ferroelectric domain dynamics and neuromimetic behavior remains unclear. Here, we reveal the correlation between domain/domain wall dynamics and neuromimetic behaviors from a microscopic perspective in real-time by using high temporal and spatial resolution in situ transmission electron microscopy. Furthermore, we propose utilizing ferroelectric microstructures for the simultaneous simulation of neuronal and synaptic plasticity, which is expected to improve the integration and performance of ferroelectric neuromorphic devices. We believe that this work to study neuromimetic behavior from the perspective of domain dynamics is instructive for the development of ferroelectric neuromorphic devices.

Investigation of electronic, ferroelectric and local electrical conduction behavior of RF sputtered BiFeO3thin films

Most of the applied research on BiFeO3(BFO) focuses on magnetoelectric and spintronic applications. This calls for a detailed grasp of multiferroic and conduction properties. BFO thin films with (100) epitaxial growth has been deposited on a LaNiO3(LNO) buffered Pt/Ti/SiO2/Si(100) substrate using RF magnetron sputtering. The film formed at 15 mTorr, 570 °C, and with Ar/O24:1 had a reasonably high degree of (100)-preferential orientation, the least surface roughness, and a densely packed structure. We obtained ferroelectric loops with strong polarization (150μC cm-2). The leakage current density is as low as 10-2A cm-2at 100 kV cm-1, implying that space-charge-limited bulk conduction (SCLC) was the primary conduction channel for carriers within BFO films. Local electrical conduction behavior demonstrates that at lower voltages, the grain boundary dominates electrical conduction and is linked to the displacement of oxygen vacancies in the grain boundary under external electric fields. We hope that a deeper understanding of the conduction mechanism will help integrate BFO into viable technologies.

Ferroelectric Domain Wall Delayer and Low-Dropout Regulator

A switching-type power converter providing an accurate and stable switching output voltage against line/load variations and power supply ripple is mostly complicated in system-on-chip power management integrated circuits (PMICs) within a limited occupation area. Here we fabricated domain wall (DW) nanodevices using an X-cut LiNbO3 thin film on silicon. The domain switching event occurs after a delay time predicted by Merz's law under the applied voltage. But the output current is irrespective of the applied voltage and can be adjusted by conducting wall width as well as input resistance in the circuit. The regulating currents appear repetitively across the volatile interfacial domains between the nanodevice and electrode under intermittently applied voltages. A wall-current-limited domain switching model is developed to explain the phenomenon. The multifunctional DW nanodevices with smaller occupation areas can serve as compact low-dropout regulators in PMICs, time-domain delayers in energy-efficient neural network systems, and on-chip electrostatic discharge protection besides nonvolatile memories and selectors.

Nonlocal erasing and writing of ferroelectric domains using a femtosecond laser in lithium niobate

We experimentally demonstrate the highly-efficient nonlocal erasing and writing of ferroelectric domains using a femtosecond laser in lithium niobate. Based on the induction of a focused infrared femtosecond laser without any relative displacement or additional treatment, the original multiple ferroelectric domains can be either erased (erasing operation) or elongated (writing operation) simultaneously in the crystal, depending on the laser focusing depth and the laser pulse energy. In the erasing operation, the original multiple ferroelectric domains can be cleared completely by just one laser induction, while in the writing operation, the average length of the ferroelectric domains can be elongated up to 235 µm by three laser inductions. A model has been proposed in which a thermoelectric field and a space charge field are used cooperatively to successfully explain the mechanism of nonlocal erasing and writing. This method greatly improves the efficiency and flexibility of tailoring ferroelectric domain structures, paving the way to large-scale all-optical industrial production for nonlinear photonic crystals and nonvolatile ferroelectric domain wall memories.

Stripe noise removal in conductive atomic force microscopy

Conductive atomic force microscopy (c-AFM) can provide simultaneous maps of the topography and electrical current flow through materials with high spatial resolution and it is playing an increasingly important role in the characterization of novel materials that are being investigated for novel memory devices. However, noise in the form of stripe features often appear in c-AFM images, challenging the quantitative analysis of conduction or topographical information. To remove stripe noise without losing interesting information, as many as sixteen destriping methods are investigated in this paper, including three additional models that we propose based on the stripes characteristics, and thirteen state-of-the-art destriping methods. We have also designed a gradient stripe noise model and obtained a ground truth dataset consisting of 800 images, generated by rotating and cropping a clean image, and created a noisy image dataset by adding random intensities of simulated noise to the ground truth dataset. In addition to comparing the results of the stripe noise removal visually, we performed a quantitative image quality comparison using simulated datasets and 100 images with very different strengths of simulated noise. All results show that the Low-Rank Recovery method has the best performance and robustness for removing gradient stripe noise without losing useful information. Furthermore, a detailed performance comparison of Polynomial fitting and Low-Rank Recovery at different levels of real noise is presented.

Atomic-scale manipulation of polar domain boundaries in monolayer ferroelectric In2Se3

Domain boundaries have been intensively investigated in bulk ferroelectric materials and two-dimensional materials. Many methods such as electrical, mechanical and optical approaches have been utilized to probe and manipulate domain boundaries. So far most research focuses on the initial and final states of domain boundaries before and after manipulation, while the microscopic understanding of the evolution of domain boundaries remains elusive. In this paper, we report controllable manipulation of the domain boundaries in two-dimensional ferroelectric In2Se3 with atomic precision using scanning tunneling microscopy. We show that the movements of the domain boundaries can be driven by the electric field from a scanning tunneling microscope tip and proceed by the collective shifting of atoms at the domain boundaries. Our density functional theory calculations reveal the energy path and evolution of the domain boundary movement. The results provide deep insight into domain boundaries in two-dimensional ferroelectric materials and will inspire inventive applications of these materials.

In-plane charged antiphase boundary and 180° domain wall in a ferroelectric film

The deterministic creation and modification of domain walls in ferroelectric films have attracted broad interest due to their unprecedented potential as the active element in non-volatile memory, logic computation and energy-harvesting technologies. However, the correlation between charged and antiphase states, and their hybridization into a single domain wall still remain elusive. Here we demonstrate the facile fabrication of antiphase boundaries in BiFeO3 thin films using a He-ion implantation process. Cross-sectional electron microscopy, spectroscopy and piezoresponse force measurement reveal the creation of a continuous in-plane charged antiphase boundaries around the implanted depth and a variety of atomic bonding configurations at the antiphase interface, showing the atomically sharp 180° polarization reversal across the boundary. Therefore, this work not only inspires a domain-wall fabrication strategy using He-ion implantation, which is compatible with the wafer-scale patterning, but also provides atomic-scale structural insights for its future utilization in domain-wall nanoelectronics.

Tuning the Multiferroic Properties of BiFeO_{3} under Uniaxial Strain

More than twenty years ago, multiferroic compounds combining in particular magnetism and ferroelectricity were rediscovered. Since then, BiFeO_{3} has emerged as the most outstanding multiferroic by combining at room temperature almost all the fundamental or applicative properties that may be desired: electroactive spin wave excitations called electromagnons, conductive domain walls, or a low band gap of interest for magnonic devices. All these properties have so far only been discontinuously strain engineered in thin films according to the lattice parameter imposed by the substrate. Here we explore the ferroelectricity and the dynamic magnetic response of BiFeO_{3} bulk under continuously tunable uniaxial strain. Using elasto-Raman spectroscopy, we show that the ferroelectric soft mode is strongly enhanced under tensile strain and driven by the volume preserving deformation at low strain. The magnonic response is entirely modified with low energy magnon modes being suppressed for tensile strain above pointing out a transition from a cycloid to an homogeneous magnetic state. Effective Hamiltonian calculations show that the ferroelectric and the antiferrodistortive modes compete in the tensile regime. In addition, the homogeneous antiferromagnetic state becomes more stable compared to the cycloidal state above a +2% tensile strain close to the experimental value. Finally, we reveal the ferroelectric and magnetic orders of BiFeO_{3} under uniaxial strain and how the tensile strain allows us to unlock and to modify in a differentiated way the polarization and the magnetic structure.

Crackling noise microscopy

Crackling noise is a scale-invariant phenomenon found in various driven nonlinear dynamical material systems as a response to external stimuli such as force or external fields. Jerky material movements in the form of avalanches can span many orders of magnitude in size and follow universal scaling rules described by power laws. The concept was originally studied as Barkhausen noise in magnetic materials and now is used in diverse fields from earthquake research and building materials monitoring to fundamental research involving phase transitions and neural networks. Here, we demonstrate a method for nanoscale crackling noise measurements based on AFM nanoindentation, where the AFM probe can be used to study the crackling of individual nanoscale features, a technique we call crackling noise microscopy. The method is successfully applied to investigate the crackling of individual topological defects, i.e. ferroelectric domain walls. We show that critical exponents for avalanches are altered at these nanoscale features, leading to a suppression of mixed-criticality, which is otherwise present in domains. The presented concept opens the possibility of investigating the crackling of individual nanoscale features in a wide range of material systems.

Nanoscale multistate resistive switching in WO3 through scanning probe induced proton evolution

Multistate resistive switching device emerges as a promising electronic unit for energy-efficient neuromorphic computing. Electric-field induced topotactic phase transition with ionic evolution represents an important pathway for this purpose, which, however, faces significant challenges in device scaling. This work demonstrates a convenient scanning-probe-induced proton evolution within WO₃, driving a reversible insulator-to-metal transition (IMT) at nanoscale. Specifically, the Pt-coated scanning probe serves as an efficient hydrogen catalysis probe, leading to a hydrogen spillover across the nano junction between the probe and sample surface. A positively biased voltage drives protons into the sample, while a negative voltage extracts protons out, giving rise to a reversible manipulation on hydrogenation-induced electron doping, accompanied by a dramatic resistive switching. The precise control of the scanning probe offers the opportunity to manipulate the local conductivity at nanoscale, which is further visualized through a printed portrait encoded by local conductivity. Notably, multistate resistive switching is successfully demonstrated via successive set and reset processes. Our work highlights the probe-induced hydrogen evolution as a new direction to engineer memristor at nanoscale.

Electric and Magnetic Properties of the Multiferroic Composites Made Based on Pb(Fe1/2Nb1/2)1-xMnxO3 and the Nickel-Zinc Ferrite

This work presents the electrophysical properties of the multiferroic ceramic composites obtained as a result of combining both magnetic and ferroelectric material. The ferroelectric components of the composite are materials with the following chemical formulas: PbFe0.5Nb0.5O3 (PFN), Pb(Fe0.495Nb0.495Mn0.01)O3 (PFNM1), and Pb(Fe0.49Nb0.49Mn0.02)O3 (PFNM2), while the magnetic component of the composite is the nickel-zinc ferrite (Ni0.64Zn0.36Fe2O4 marked as F). The crystal structure, microstructure, DC electric conductivity, and ferroelectric, dielectric, magnetic, and piezoelectric properties of the multiferroic composites are performed. The conducted tests confirm that the composite samples have good dielectric and magnetic properties at room temperature. Multiferroic ceramic composites have a two-phase crystal structure (ferroelectric from a tetragonal system and magnetic from a spinel structure) without a foreign phase. Composites with an admixture of manganese have a better set of functional parameters. The manganese admixture increases the microstructure's homogeneity, improves the magnetic properties, and reduces the electrical conductivity of composite samples. On the other hand, in the case of electric permittivity, a decrease in the maximum values of εm is observed with an increase in the amount of manganese in the ferroelectric component of composite compositions. However, the dielectric dispersion at high temperatures (associated with high conductivity) disappears.

Erasable Domain Wall Current-Dominated Resistive Switching in BiFeO3 Devices with an Oxide-Metal Interface

Electric transport in the charged domain wall (CDW) region has emerged as a promising phenomenon for the development of next-generation ferro-resistive memory with ultrahigh data storage density. However, accurately measuring the conductivity of CDWs induced by polarization reversal remains challenging due to the polarization modulation of the Schottky barrier at the thin film-electrode interface, which could partially contribute to the collected "on" current of the device. Here, we propose carefully selecting an electrode that can suppress the effect of interfacial barrier modulation induced by polarization reversal, allowing the collected current mainly from the conductive CDWs. The experiment was conducted on epitaxial BiFeO₃(001) thin-film devices with vertical and horizontal geometries. Piezo-response force microscopy scanning showed the local polarization experienced 180° rotation to form CDWs under the vertical electric field. However, devices with SrRuO₃ epitaxial top electrodes still exhibit an interfacial barrier-dominated diode behavior, with the "on" current proportional to the electrode area. To identify the CDW current, more interfacial defects were introduced by the deposition of Pt top electrodes, which significantly enhanced charge injection for the compensation of the reversed polarization driven by the electric field, leading to the suppressed polarization modulation of the Schottky barrier height. It was observed that the current flow through Pt electrodes is significantly lower compared to that of SRO electrodes and appears to be primarily influenced by the electrode perimeter instead of the electrode area, indicating CDW-dominated conduction behavior in these devices. Planar nanodevices were further fabricated to support the quantitative investigation of the Pt electrode size-dependent "on" current with a linear fit of the current magnitude versus the CDW cross-sectional area. This work constitutes an essential part of understanding the role of the CDW current in ferro-resistive memory devices.

Mobile Kink Solitons in a Van der Waals Charge-Density-Wave Layer

Kinks, point-like geometrical defects along dislocations, domain walls, and DNA, are stable and mobile, as solutions of a sine-Gordon wave equation. While they are widely investigated for crystal deformations and domain wall motions, electronic properties of individual kinks have received little attention. In this work, electronically and topologically distinct kinks are discovered along electronic domain walls in a correlated van der Waals insulator of 1T-TaS₂ . Mobile kinks and antikinks are identified as trapped by pinning defects and imaged in scanning tunneling microscopy. Their atomic structures and in-gap electronic states are unveiled, which are mapped approximately into Su-Schrieffer-Heeger solitons. The twelvefold degeneracy of the domain walls in the present system guarantees an extraordinarily large number of distinct kinks and antikinks to emerge. Such large degeneracy together with the robust geometrical nature may be useful for handling multilevel information in van der Waals materials architectures.

Thermodynamics of Light-Induced Nanoscale Polar Structures in Ferroelectric Superlattices

We study the thermodynamics of nanoscale polar structures in PbTiO₃/SrTiO₃ ferroelectric superlattices induced by above-bandgap optical excitation using a phase-field model explicitly considering both structural and electronic processes. We demonstrate that the light-excited carriers provide the charge compensation of polarization bound charges and the lattice thermal energy, both of which are key to the thermodynamic stabilization of a previously observed supercrystal, a three-dimensionally periodic nanostructure, within a window of substrate strains, while different mechanical and electrical boundary conditions can stabilize a number of other nanoscale polar structures by balancing the competing short-range exchange interactions responsible for the domain wall energy and long-range electrostatic and elastic interactions. The insights into the light-induced formation and richness of nanoscale structures from this work offer theoretical guidance for exploring and manipulating the thermodynamic stability of nanoscale polar structures employing a combination of thermal, mechanical, and electrical stimuli as well as light.

Facile Control of Ferroelastic Domain Patterns in Multiferroic Thin Films by a Scanning Tip Bias

BiFeO₃, known as the "holy grail of all multiferroics", provides an appealing platform for exploration of multifield coupling physics and design of functional devices. Many fantastic properties of BiFeO₃ are regulated by its ferroelastic domain structure. However, a facile programable control on the ferroelastic domain structure in BiFeO₃ remains challenging and our understanding on the existing control strategies is also far from complete. This work reports a facile control of ferroelastic domain patterns in BiFeO₃ thin films under area scanning poling by exploiting the tip bias as the control parameter. Combining scanning probe microscopy experiments and simulations, we found that BiFeO₃ thin films with pristine 71° rhombohedral-phase stripe domains exhibit at least four switching pathways solely by controlling the scanning tip bias. As a result, one can readily write mesoscopic topological defects into the films without the necessity to change the tip motion. The correlation between conductance of the scanned region and the switching pathway is further investigated. Our results extend the current understanding on the domain switching kinetics and the coupled electronic transport properties in BiFeO₃ thin films. The facile voltage control of ferroelastic domains should facilitate the development of configurable electronic and spintronic devices.

Tuning of Polar Domain Boundaries in Nonpolar Perovskite

Domain boundaries in ferroic materials are found to have various physical properties not observed in the surrounding domains. Such differences can be enhanced and bring promising functionalities when centrosymmetric nonpolar materials encounter polar domain boundaries. In this work, a tunable polar domain boundary is discovered in an antiferroelectric single crystal. Under a small stress or electric field, the density, volume, and polarity of the boundaries are successfully controlled.

Real-Space Infrared Spectroscopy of Ferroelectric Domain Walls in Multiferroic h-(Lu,Sc)FeO3

We employ synchrotron-based near-field infrared spectroscopy to image the phononic properties of ferroelectric domain walls in hexagonal (h) Lu_0.6Sc_0.4FeO₃, and we compare our findings with a detailed symmetry analysis, lattice dynamics calculations, and prior models of domain-wall structure. Rather than metallic and atomically thin as observed in the rare-earth manganites, ferroelectric walls in h-Lu_0.6Sc_0.4FeO₃ are broad and semiconducting, a finding that we attribute to the presence of an A-site substitution-induced intermediate phase that reduces strain and renders the interior of the domain wall nonpolar. Mixed Lu/Sc occupation on the A site also provides compositional heterogeneity over micron-sized length scales, and we leverage the fact that Lu and Sc cluster in different ratios to demonstrate that the spectral characteristics at the wall are robust even in different compositional regimes. This work opens the door to broadband imaging of physical and chemical heterogeneity in ferroics and represents an important step toward revealing the rich properties of these flexible defect states.

Non-volatile electric-field control of inversion symmetry

Competition between ground states at phase boundaries can lead to significant changes in properties under stimuli, particularly when these ground states have different crystal symmetries. A key challenge is to stabilize and control the coexistence of symmetry-distinct phases. Using BiFeO₃ layers confined between layers of dielectric TbScO₃ as a model system, we stabilize the mixed-phase coexistence of centrosymmetric and non-centrosymmetric BiFeO₃ phases at room temperature with antipolar, insulating and polar semiconducting behaviour, respectively. Application of orthogonal in-plane electric (polar) fields results in reversible non-volatile interconversion between the two phases, hence removing and introducing centrosymmetry. Counterintuitively, we find that an electric field 'erases' polarization, resulting from the anisotropy in octahedral tilts introduced by the interweaving TbScO₃ layers. Consequently, this interconversion between centrosymmetric and non-centrosymmetric phases generates changes in the non-linear optical response of over three orders of magnitude, resistivity of over five orders of magnitude and control of microscopic polar order. Our work establishes a platform for cross-functional devices that take advantage of changes in optical, electrical and ferroic responses, and demonstrates octahedral tilts as an important order parameter in materials interface design.

Configurable Crack Wall Conduction in a Complex Oxide

Mobile defects in solid-state materials play a significant role in memristive switching and energy-efficient neuromorphic computation. Techniques for confining and manipulating point defects may have great promise for low-dimensional memories. Here, we report the spontaneous gathering of oxygen vacancies at strain-relaxed crack walls in SrTiO₃ thin films grown on DyScO₃ substrates as a result of flexoelectricity. We found that electronic conductance at the crack walls was enhanced compared to the crack-free region, by a factor of 10⁴. A switchable asymmetric diode-like feature was also observed, and the mechanism is discussed, based on the electrical migration of oxygen vacancy donors in the background of Sr-deficient acceptors forming n⁺-n or n-n⁺ junctions. By tracing the temporal relaxations of surface potential and lattice expansion of a formed region, we determine the diffusivity of mobile defects in crack walls to be 1.4 × 10^-16 cm²/s, which is consistent with oxygen vacancy kinetics.

Dynamic domain boundaries: chemical dopants carried by moving twin walls

Domain walls and specifically ferroelastic twin boundaries are depositaries and fast diffusion pathways for chemical dopants and intrinsic lattice defects. Ferroelastic domain patterns act as templates for chemical structures where the walls are the device and not the bulk. Several examples of such engineered domain boundaries are given. Moving twin boundaries are shown to carry with them the dopants, although the activation of this mechanism depends sensitively on the applied external force. If the force is too weak, the walls remain pinned while too strong forces break the walls free of the dopants and move them independently. Several experimental methods and approaches are discussed.

In-plane charged domain walls with memristive behaviour in a ferroelectric film

Domain-wall nanoelectronics is considered to be a new paradigm for non-volatile memory and logic technologies in which domain walls, rather than domains, serve as an active element. Especially interesting are charged domain walls in ferroelectric structures, which have subnanometre thicknesses and exhibit non-trivial electronic and transport properties that are useful for various nanoelectronics applications^1-3. The ability to deterministically create and manipulate charged domain walls is essential to realize their functional properties in electronic devices. Here we report a strategy for the controllable creation and manipulation of in-plane charged domain walls in BiFeO₃ ferroelectric films a few nanometres thick. By using an in situ biasing technique within a scanning transmission electron microscope, an unconventional layer-by-layer switching mechanism is detected in which ferroelectric domain growth occurs in the direction parallel to an applied electric field. Based on atomically resolved electron energy-loss spectroscopy, in situ charge mapping by in-line electron holography and theoretical calculations, we show that oxygen vacancies accumulating at the charged domain walls are responsible for the domain-wall stability and motion. Voltage control of the in-plane domain-wall position within a BiFeO₃ film gives rise to multiple non-volatile resistance states, thus demonstrating the key functional property of being a memristor a few unit cells thick. These results promote a better understanding of ferroelectric switching behaviour and provide a new strategy for creating unit-cell-scale devices.

Strain induced structural phase transition and compositional dependent magnetic phase transition in Ti doped Bi0.80Ba0.20FeO3 ceramics

Bi_0.80Ba_0.20Fe_1-xTi_xO₃ ( 0 ≤ x ≤ 0.10 ) samples are prepared using solid state reaction technique. Bi³⁺ site is replaced with 20 % Ba²⁺ which induced structural modification from rhombohedral to pseudo cubic accompanied by the creation of oxygen vacancies owing to the charge reimbursement. Fe³⁺ site is replaced with different concentrations of Ti⁴⁺ keeping Ba content fixed. All the samples exhibited similar morphology and no significant variation in grain size is observed by substituting Ti at Fe site. All of the samples exhibited ferromagnetic behavior, which is ascribed to the destruction of spiral spin structures and changes in super-exchange interaction strength caused by variations in bond lengths of Fe-O and Fe-O-Fe. The decrease in magnetization with increasing Ti concentration is due to magnetic moment dilution caused by non-magnetic Ti⁴⁺. An anomalous trend in magnetization is observed for magnetic measurements at low temperature (77 K) where structural transformation from ferromagnetic to diamagnetic behavior was noted for 10% Ti content. Further, because of the incorporation of Ti⁴⁺, an improved dielectric property was observed due to increase in resistivity and decrease in the defect concentration (oxygen vacancies). In the present study, it was concluded that optimum concentration of Ba²⁺ (20%) and Ti⁴⁺ co-doped BiFeO₃ systems have shown enhanced multiferroic properties at room temperature.

Magnetoelastic coupling and critical behavior of some strongly correlated magnetic systems

The strongly correlated magnetic systems are attracting continuous attention in current condensed matter research due to their very compelling physics and promising technological applications. Being a host to charge, spin, and lattice degrees of freedom, such materials exhibit a variety of phases, and investigation of their physical behavior near such a phase transition bears an immense possibility. This review summarizes the recent progress in elucidating the role of magnetoelastic coupling on the critical behavior of some technologically important class of strongly correlated magnetic systems such as perovskite magnetites, uranium ferromagnetic superconductors, and multiferroic hexagonal manganites. It begins with encapsulation of various experimental findings and then proceeds toward describing how such experiments motivate theories within the Ginzburg-Landau phenomenological picture in order to capture the physics near a magnetic phase transition of such systems. The theoretical results that are obtained by implementing Wilson's renormalization-group to nonlocal Ginzburg-Landau model Hamiltonians are also highlighted. A list of possible experimental realizations of the coupled model Hamiltonians elucidates the importance of spin-lattice coupling near a critical point of strongly correlated magnetic systems.

Giant switchable non thermally-activated conduction in 180° domain walls in tetragonal Pb(Zr,Ti)O3

Conductive domain walls in ferroelectrics offer a promising concept of nanoelectronic circuits with 2D domain-wall channels playing roles of memristors or synoptic interconnections. However, domain wall conduction remains challenging to control and pA-range currents typically measured on individual walls are too low for single-channel devices. Charged domain walls show higher conductivity, but are generally unstable and difficult to create. Here, we show highly conductive and stable channels on ubiquitous 180° domain walls in the archetypical ferroelectric, tetragonal Pb(Zr,Ti)O₃. These electrically erasable/rewritable channels show currents of tens of nanoamperes (200 to 400 nA/μm) at voltages ≤2 V and metallic-like non thermally-activated transport properties down to 4 K, as confirmed by nanoscopic mapping. The domain structure analysis and phase-field simulations reveal complex switching dynamics, in which the extraordinary conductivity in strained Pb(Zr,Ti)O₃ films is explained by an interplay between ferroelastic a- and c-domains. This work demonstrates the potential of accessible and stable arrangements of nominally uncharged and electrically switchable domain walls for nanoelectronics.

Competition between Ferroelectric and Ferroelastic Domain Wall Dynamics during Local Switching in Rhombohedral PMN-PT Single Crystals

The possibility to control the charge, type, and density of domain walls allows properties of ferroelectric materials to be selectively enhanced or reduced. In ferroelectric-ferroelastic materials, two types of domain walls are possible: pure ferroelectric and ferroelastic-ferroelectric. In this paper, we demonstrated a strategy to control the selective ferroelectric or ferroelastic domain wall formation in the (111) single-domain rhombohedral PMN-PT single crystals at the nanoscale by varying the relative humidity level in a scanning probe microscopy chamber. The solution of the corresponding coupled electro-mechanical boundary problem allows explaining observed competition between ferroelastic and ferroelectric domain growth. The reduction in the ferroelastic domain density during local switching at elevated humidity has been attributed to changes in the electric field spatial distribution and screening effectiveness. The established mechanism is important because it reveals a kinetic nature of the final domain patterns in multiaxial materials and thus provides a general pathway to create desirable domain structure in ferroelectric materials for applications in piezoelectric and optical devices.

Quantification of the Electromechanical Measurements by Piezoresponse Force Microscopy

Piezoresponse force microscopy (PFM) is widely used for characterization and exploration of the nanoscale properties of ferroelectrics. However, quantification of the PFM signal is challenging due to the convolution of various extrinsic and intrinsic contributions. Although quantification of the PFM amplitude signal has received considerable attention, quantification of the PFM phase signal has not been addressed. A properly calibrated PFM phase signal can provide valuable information on the sign of the local piezoelectric coefficient-an important and nontrivial issue for emerging ferroelectrics. In this work, two complementary methodologies to calibrate the PFM phase signal are discussed. The first approach is based on using a standard reference sample with well-known independently measured piezoelectric coefficients, while the second approach exploits the electrostatic sample-cantilever interactions to determine the parasitic phase offset. Application of these methodologies to studies of the piezoelectric behavior in ferroelectric HfO₂ -based thin-film capacitors reveals intriguing variations in the sign of the longitudinal piezoelectric coefficient, d_33,eff . It is shown that the piezoelectric properties of the HfO₂ -based capacitors are inherently sensitive to their thickness, electrodes, as well as deposition methods, and can exhibit wide variations including a d_33,eff sign change within a single device.

Exploring Physics of Ferroelectric Domain Walls in Real Time: Deep Learning Enabled Scanning Probe Microscopy

The functionality of ferroelastic domain walls in ferroelectric materials is explored in real-time via the in situ implementation of computer vision algorithms in scanning probe microscopy (SPM) experiment. The robust deep convolutional neural network (DCNN) is implemented based on a deep residual learning framework (Res) and holistically nested edge detection (Hed), and ensembled to minimize the out-of-distribution drift effects. The DCNN is implemented for real-time operations on SPM, converting the data stream into the semantically segmented image of domain walls and the corresponding uncertainty. Further the pre-defined experimental workflows perform piezoresponse spectroscopy measurement on thus discovered domain walls, and alternating high- and low-polarization dynamic (out-of-plane) ferroelastic domain walls in a PbTiO3 (PTO) thin film and high polarization dynamic (out-of-plane) at short ferroelastic walls (compared with long ferroelastic walls) in a lead zirconate titanate (PZT) thin film is reported. This work establishes the framework for real-time DCNN analysis of data streams in scanning probe and other microscopies and highlights the role of out-of-distribution effects and strategies to ameliorate them in real time analytics.

Origin of Negative Photoconductivity at the Interface of Ba0.8Sr0.2TiO3/LaMnO3/Ba0.8Sr0.2TiO3 Heterostructures

The study of Ba_0.8Sr_0.2TiO₃/LaMnO₃/Ba_0.8Sr_0.2TiO₃ heterostructures on a MgO substrate with Ba_0.8Sr_0.2TiO₃ ferroelectric films revealed the occurrence of a metallic character of the temperature behavior of the resistance at a temperature less than 175 K. This behavior is associated with an increased charge concentration at the interface due to a discontinuity in the ferroelectric polarization at the interface between the films. At these temperatures, the effect of negative photoconductivity is observed under uniform illumination with the light of a selected spectral composition event on the surface of the ferroelectric film. The combined exposure to green and infrared light led to an addition of the effects. As a result, a cumulative effect was observed. The effect of metallic conductivity is due to the discontinuity of ferroelectric polarization. Therefore, we explain that the partial screening of the ferroelectric polarization by photogenerated charge carriers causes a reduction in the carrier concentration at the interface. Measurements in the Kelvin mode of atomic force microscopy showed that illumination influences the surface charge concentration in a similar way; this observation confirms our hypothesis.

Biferroelectricity of a homochiral organic molecule in both solid crystal and liquid crystal phases

Ferroelectricity, existing in either solid crystals or liquid crystals, gained widespread attention from science and industry for over a century. However, ferroelectricity has never been observed in both solid and liquid crystal phases of a material simultaneously. Inorganic ferroelectrics that dominate the market do not have liquid crystal phases because of their completely rigid structure caused by intrinsic chemical bonds. We report a ferroelectric homochiral cholesterol derivative, β-sitosteryl 4-iodocinnamate, where both solid and liquid crystal phases can exhibit the behavior of polarization switching as determined by polarization–voltage hysteresis loops and piezoresponse force microscopy measurements. The unique long molecular chain, sterol structure, and homochirality of β-sitosteryl 4-iodocinnamate molecules enable the formation of polar crystal structures with point group 2 in solid crystal phases, and promote the layered and helical structure in the liquid crystal phase with vertical polarization. Our findings demonstrate a compound that can show the biferroelectricity in both solid and liquid crystal phases, which would inspire further exploration of the interplay between solid and liquid crystal ferroelectric phases.

Ferroelectricity normally exists in either solid crystals or liquid crystals. Here, the authors report a homochiral organic compound which shows ferroelectricity in both solid crystal and liquid crystal phases.

The Third Dimension of Ferroelectric Domain Walls

Ferroelectric domain walls are quasi-2D systems that show great promise for the development of nonvolatile memory, memristor technology, and electronic components with ultrasmall feature size. Electric fields, for example, can change the domain wall orientation relative to the spontaneous polarization and switch between resistive and conductive states, controlling the electrical current. Being embedded in a 3D material, however, the domain walls are not perfectly flat and can form networks, which leads to complex physical structures. In this work, the importance of the nanoscale structure for the emergent transport properties is demonstrated, studying electronic conduction in the 3D network of neutral and charged domain walls in ErMnO₃ . By combining tomographic microscopy techniques and finite element modeling, the contribution of domain walls within the bulk is clarified and the significance of curvature effects for the local conduction is shown down to the nanoscale. The findings provide insights into the propagation of electrical currents in domain wall networks, reveal additional degrees of freedom for their control, and provide quantitative guidelines for the design of domain-wall-based technology.

Significant Reduction of the Dead Layers by the Strain Release in La0.7Sr0.3MnO3 Heterostructures

Great efforts have been devoted to exploring the emergent phenomena occurring in heterostructures of correlated oxides. However, the presence of both magnetic and electrical dead layers in functional oxide films generally obstructs the device functionalization and miniaturization. Here, we demonstrate an effective strategy to significantly reduce the thickness of dead layers in a prototypical correlated oxide system, La_0.7Sr_0.3MnO₃ (LSMO) grown on LaAlO₃ (LAO) substrates, via strain engineering by inserting a Sr₃Al₂O₆ buffer layer with a different thickness at heterointerfaces. In this way, the thicknesses of the magnetic and electrical dead layers of LSMO films on the LAO substrates notably decrease from 8 to 4 unit cells and from 13 to 9 unit cells, respectively. Our results provide a convenient method to minimize or even eliminate the dead layers of correlated oxides through the interfacial strain engineering, which has potential applications in nanoscale oxide spintronic devices.

Ultrahigh Carrier Mobilities in Ferroelectric Domain Wall Corbino Cones at Room Temperature

Recently, electrically conducting heterointerfaces between dissimilar band insulators (such as lanthanum aluminate and strontium titanate) have attracted considerable research interest. Charge transport and fundamental aspects of conduction have been thoroughly explored. Perhaps surprisingly, similar studies on conceptually much simpler conducting homointerfaces, such as domain walls, are not nearly so well developed. Addressing this disparity, magnetoresistance is herein reported in approximately conical 180° charged domain walls, in partially switched ferroelectric thin-film single-crystal lithium niobate. This system is ideal for such measurements: first, the conductivity difference between domains and domain walls is unusually large (a factor of 1013 ) and hence currents driven through the thin film, between planar top and bottom electrodes, are overwhelmingly channeled along the walls; second, when electrical contact is made to the top and bottom of the domain walls and a magnetic field is applied along their cone axes, then the test geometry mirrors that of a Corbino disk: a textbook arrangement for geometric magnetoresistance measurement. Data imply carriers with extremely high room-temperature Hall mobilities of up to ≈3700 cm2 V-1 s-1 . This is an unparalleled value for oxide interfaces (and for bulk oxides) comparable to mobilities in other systems seen at cryogenic, rather than at room, temperature.

Nonvolatile ferroelectric domain wall memory integrated on silicon

Ferroelectric domain wall memories have been proposed as a promising candidate for nonvolatile memories, given their intriguing advantages including low energy consumption and high-density integration. Perovskite oxides possess superior ferroelectric prosperities but perovskite-based domain wall memory integrated on silicon has rarely been reported due to the technical challenges in the sample preparation. Here, we demonstrate a domain wall memory prototype utilizing freestanding BaTiO₃ membranes transferred onto silicon. While as-grown BaTiO₃ films on (001) SrTiO₃ substrate are purely c-axis polarized, we find they exhibit distinct in-plane multidomain structures after released from the substrate and integrated onto silicon due to the collective effects from depolarizing field and strain relaxation. Based on the strong in-plane ferroelectricity, conductive domain walls with reading currents up to nanoampere are observed and can be both created and erased artificially, highlighting the great potential of the integration of perovskite oxides with silicon for ferroelectric domain wall memories.

Integrating ferroelectric perovskite oxides on Si is highly desired for electronic applications but challenging. Here, the authors show emergent in-plane ferroelectricity and promising nonvolatile memories based on resistive domain wall in BaTiO₃/Si.