Trap healing and ultralow-noise Hall effect at the surface of organic semiconductors

Molecular Electronics: From Nanostructure Assembly to Device Integration

Integrated electronics and optoelectronics based on organic semiconductors have attracted considerable interest in displays, photovoltaics, and biosensing owing to their designable electronic properties, solution processability, and flexibility. Miniaturization and integration of devices are growing trends in molecular electronics and optoelectronics for practical applications, which requires large-scale and versatile assembly strategies for patterning organic micro/nano-structures with simultaneously long-range order, pure orientation, and high resolution. Although various integration methods have been developed in past decades, molecular electronics still needs a versatile platform to avoid defects and disorders due to weak intermolecular interactions in organic materials. In this perspective, a roadmap of organic integration technologies in recent three decades is provided to review the history of molecular electronics. First, we highlight the importance of long-range-ordered molecular packing for achieving exotic electronic and photophysical properties. Second, we classify the strategies for large-scale integration of molecular electronics through the control of nucleation and crystallographic orientation, and evaluate them based on factors of resolution, crystallinity, orientation, scalability, and versatility. Third, we discuss the multifunctional devices and integrated circuits based on organic field-effect transistors (OFETs) and photodetectors. Finally, we explore future research directions and outlines the need for further development of molecular electronics, including assembly of doped organic semiconductors and heterostructures, biological interfaces in molecular electronics and integrated organic logics based on complementary FETs.

Environmentally stable and stretchable polymer electronics enabled by surface-tethered nanostructured molecular-level protection

Stretchable polymer semiconductors (PSCs) are essential for soft stretchable electronics. However, their environmental stability remains a longstanding concern. Here we report a surface-tethered stretchable molecular protecting layer to realize stretchable polymer electronics that are stable in direct contact with physiological fluids, containing water, ions and biofluids. This is achieved through the covalent functionalization of fluoroalkyl chains onto a stretchable PSC film surface to form densely packed nanostructures. The nanostructured fluorinated molecular protection layer (FMPL) improves the PSC operational stability over an extended period of 82 days and maintains its protection under mechanical deformation. We attribute the ability of FMPL to block water absorption and diffusion to its hydrophobicity and high fluorination surface density. The protection effect of the FMPL (~6 nm thickness) outperforms various micrometre-thick stretchable polymer encapsulants, leading to a stable PSC charge carrier mobility of ~1 cm2 V-1 s-1 in harsh environments such as in 85-90%-humidity air for 56 days or in water or artificial sweat for 42 days (as a benchmark, the unprotected PSC mobility degraded to 10-6 cm2 V-1 s-1 in the same period). The FMPL also improved the PSC stability against photo-oxidative degradation in air. Overall, we believe that our surface tethering of the nanostructured FMPL is a promising approach to achieve highly environmentally stable and stretchable polymer electronics.

π-Extended Rubrenes via Dearomative Annulative π-Extension Reaction

Among a large variety of organic semiconducting materials, rubrene (5,6,11,12-tetraphenyltetracene) represents one of the most prominent molecular entities mainly because of its unusually high carrier mobility. Toward finding superior rubrene-based organic semiconductors, several synthetic strategies for related molecules have been established. However, despite its outstanding properties and significant attention in the field of materials science, late-stage functionalizations of rubrene remains undeveloped, thereby limiting the accessible chemical space of rubrene-based materials. Herein, we report on a late-stage π-extension of rubrene by dearomative annulative π-extension (DAPEX), leading to the generation of rubrene derivatives having an extended acene core. The Diels-Alder reaction of rubrene with 4-methyl-1,2,4-triazoline-3,5-dione occurred to give 1:1 and 1:2 cycloadducts which further underwent iron-catalyzed annulative diarylation. The thus-formed 1:1 and 1:2 adducts were subjected to radical-mediated oxidation and thermal cycloreversion to furnish one-side and two-side π-extended rubrenes, respectively. These π-extended rubrenes displayed a marked red shift in absorption and emission spectra, clearly showing that the acene π-system of rubrene was extended not only structurally but also electronically. The X-ray crystallographic analysis uncovered interesting packing modes of these π-extended rubrenes. Particularly, two-side π-extended rubrene adopts a brick-wall packing structure with largely overlapping two-dimensional face-to-face π-π interactions. Finally, organic field-effect transistor devices using two-side π-extended rubrene were fabricated, and their carrier mobilities were measured. The observed maximum hole mobility of 1.49 × 10-3 cm2V-1 s-1, which is a comparable value to that of the thin-film transistor using rubrene, clearly shows the potential utility of two-side π-extended rubrene in organic electronics.

Novel Dark Current Reduction Strategy via Deep Bulk Traps for High-Performance Solution-Processed Organic Photodetectors

The performance improvement of the organic photodetectors (OPDs) focuses on suppressing the dark current density (J_d) to improve the specific detectivity. In this work, a dark current reduction strategy relying on constructing limited deep traps in the active layer to suppress charge injection rate was newly proposed. And an optimization method has been successfully demonstrated on the solution-processed OPDs accordingly. Compared with the J_d expressed by the OPD with the shallow trap system, the device with deep bulk traps exhibits a dramatically reduced dark current while ensuring high responsivity. At a bias of -2 V, the optimized photodiode with a J_d down to 1.4 × 10^-5 mA cm^-2 and a maximum responsivity of 0.42 A W^-1 @620 nm was realized, leading to a maximum detectivity calculated from shot noise of 6.23 × 10¹² Jones. This value is 49-fold higher than that of the original OPD with the same structure. The effects of deep traps inside the semiconductor film on injected carriers and photogenerated carriers are well explained by the relative positions of the initial hopping levels. A better understanding of charge transport regimes in OPD helps to open new approaches for constructing high-performance OPD toward practical applications.

Molecular Semiconductors for Logic Operations: Dead-End or Bright Future?

The field of organic electronics has been prolific in the last couple of years, leading to the design and synthesis of several molecular semiconductors presenting a mobility in excess of 10 cm² V^-1 s^-1 . However, it is also started to recently falter, as a result of doubtful mobility extractions and reduced industrial interest. This critical review addresses the community of chemists and materials scientists to share with it a critical analysis of the best performing molecular semiconductors and of the inherent charge transport physics that takes place in them. The goal is to inspire chemists and materials scientists and to give them hope that the field of molecular semiconductors for logic operations is not engaged into a dead end. To the contrary, it offers plenty of research opportunities in materials chemistry.

A competitive hopping model for carrier transport in disordered organic semiconductors

Here, we formulate a theoretical transport model for disordered organic semiconductors based on the concept of competitive hopping. We demonstrate theoretically that carriers occupying states with higher energy levels have higher probabilities and higher rates of hopping to the transport energy. This model suggests a temperature (T) dependence of mobility (μ) given by lg(μ) ∝ T-n, where the low carrier density and small energetic disorder limitation of the competitive hopping model gives the non-Arrhenius lg(μ) ∝ T-2 relation, and the high carrier density and large energetic disorder limitation gives the Arrhenius type lg(μ) ∝ T-1 relation. The carrier density dependence of carrier mobility is steeper at high carrier density than at low carrier density. These results are well explained by the relative positions of the Fermi level and the equilibrium level as the initial hopping levels. The competitive hopping model successfully explains the trap energy dependence of the carrier mobility for systems with deep traps. The mobility enhancement with increasing trap energy at deep trapping situations can be explained by the increasing contribution to the carrier transport of the hopping between the intrinsic states.

Threshold Voltage Control in Organic Field-Effect Transistors by Surface Doping with a Fluorinated Alkylsilane

Doping is a powerful tool to control the majority charge carrier density in organic field-effect transistors and the threshold voltage of these devices. Here, a surface doping approach is shown, where the dopant is deposited on the prefabricated polycrystalline semiconducting layer. In this study, (tridecafluoro-1,1,2,2-tetrahydrooctyl)trichlorosilane (FTCS), a fluorinated alkylsilane is used as a dopant, which is solution processable and much cheaper than conventional p-type dopants, such as 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ). In this work, the depositions from the gas phase and from solution are compared. Both deposition approaches led to an increased conductivity and to a shift in the threshold voltage to more positive values, both of which indicate a p-type doping effect. The magnitude of the threshold voltage shift could be controlled by the FTCS deposition time (from vapor) or FTCS concentration (from solution); for short deposition times and low concentrations, the off current stayed constant and the mobility decreased only slightly. In the low doping concentration regime, both approaches resulted in similar transistor characteristics, i.e., similar values of shift in the threshold and turn-on voltage as well as mobility, I_ON/ I_OFF ratio and amount of introduced free charge carriers. In comparison with vapor deposition, the solution-based approach can be conducted with less material and in a shorter time, which is critical for industrial applications.

Parts-per-Million-Level Doping Effects in Organic Semiconductor Films and Organic Single Crystals

Controlling the pn-type behavior of a semiconductor such as silicon by adding an extremely small quantity of an impurity (doping) is a central part of inorganic semiconductor electronics since the 20th century. Recent progress in the doping of organic semiconductors strongly suggests the advent of a new era of doped organic semiconductors. Here, the principles and effects of doping at the level of parts per million (ppm) in organic semiconductor films and single crystals are described, including descriptions of complete pn-control, doping sensitization, ppm doping using an extremely low-speed deposition technique reaching 10^-9 nm s^-1 , and emerging ppm-level doping effects, such as trap filling, majority carriers, homojunction formation, and decreased mobility, as well as ppm-level doping effects in organic single crystals measured by the Hall effect, which shows a doping efficiency of 24%. The Wannier excitonic doping of organic single crystals possessing band conduction and the defect science of organic single crystals related to carrier trapping and scattering are introduced as a new scientific field. The dawn of organic single-crystal electronics is also discussed.

Organic Semiconductor Single Crystals for Electronics and Photonics

Organic semiconducting single crystals (OSSCs) are ideal candidates for the construction of high-performance optoelectronic devices/circuits and a great platform for fundamental research due to their long-range order, absence of grain boundaries, and extremely low defect density. Impressive improvements have recently been made in organic optoelectronics: the charge-carrier mobility is now over 10 cm² V^-1 s^-1 and the fluorescence efficiency reaches 90% for many OSSCs. Moreover, high mobility and strong emission can be integrated into a single OSSC, for example, showing a mobility of up to 34 cm² V^-1 s^-1 and a photoluminescence yield of 41.2%. These achievements are attributed to the rational design and synthesis of organic semiconductors as well as improvements in preparation technology for crystals, which accelerate the application of OSSCs in devices and circuits, such as organic field-effect transistors, organic photodetectors, organic photovoltaics, organic light-emitting diodes, organic light-emitting transistors, and even electrically pumped organic lasers. In this context, an overview of these fantastic advancements in terms of the fundamental insights into developing high-performance organic semiconductors, efficient strategies for yielding desirable high-quality OSSCs, and their applications in optoelectronic devices and circuits is presented. Finally, an overview of the development of OSSCs along with current challenges and future research directions is provided.

Correlating Crystal Thickness, Surface Morphology, and Charge Transport in Pristine and Doped Rubrene Single Crystals

The relationship between charge transport and surface morphology is investigated by utilizing rubrene single crystals of varying thicknesses. In the case of pristine crystals, the surface conductivities decrease exponentially as the crystal thickness increases until ∼4 μm, beyond which the surface conductivity saturates. Investigation of the surface morphology using optical and atomic force microscopy reveals that thicker crystals have a higher number of molecular steps, increasing the overall surface roughness compared with thin crystals. The density of molecular steps as a surface trap is further quantified with the subthreshold slope of rubrene air-gap transistors. This thickness-dependent surface conductivity is rationalized by a shift from in-plane to out-of-plane transport governed by surface roughness. The surface transport is disrupted by roughening of the crystal surface and becomes limited by the slower vertical crystallographic axis on molecular step edges. Separately, we investigate surface-doping of rubrene crystals by using fluoroalkyltrichrolosilane and observe a different mechanism for charge transport which is independent of surface roughness. This work demonstrates that the correlation between crystal thickness, surface morphology, and charge transport must be taken into account when measuring organic single crystals. Considering the fact that these molecular steps are universally observed on organic/inorganic and single/polycrystals, we believe that our findings can be widely applied to improve charge transport understanding.

Rotator side chains trigger cooperative transition for shape and function memory effect in organic semiconductors

Martensitic transition is a solid-state phase transition involving cooperative movement of atoms, mostly studied in metallurgy. The main characteristics are low transition barrier, ultrafast kinetics, and structural reversibility. They are rarely observed in molecular crystals, and hence the origin and mechanism are largely unexplored. Here we report the discovery of martensitic transition in single crystals of two different organic semiconductors. In situ microscopy, single-crystal X-ray diffraction, Raman and nuclear magnetic resonance spectroscopy, and molecular simulations combined indicate that the rotating bulky side chains trigger cooperative transition. Cooperativity enables shape memory effect in single crystals and function memory effect in thin film transistors. We establish a molecular design rule to trigger martensitic transition in organic semiconductors, showing promise for designing next-generation smart multifunctional materials.

Martensitic transition is commonly seen in steel and shape memory alloys but rarely in organic materials. Chung et al. discover martensitic transitions in organic electronics and utilize it in designing field-effect transistors, leading to shape memory effect that in return modifies charge transport properties.

Organic semiconductor crystals

A comprehensive overview of organic semiconductor crystals is provided, including the physicochemical features, the control of crystallization and the device physics.

Hall Effect in Bulk-Doped Organic Single Crystals

The standard technique to separately and simultaneously determine the carrier concentration per unit volume (N, cm^-3 ) and the mobility (μ) of doped inorganic single crystals is to measure the Hall effect. However, this technique has not been reported for bulk-doped organic single crystals. Here, the Hall effect in bulk-doped single-crystal organic semiconductors is measured. A key feature of this work is the ultraslow co-deposition technique, which reaches as low as 10^-9 nm s^-1 and enables us to dope homoepitaxial organic single crystals with acceptors at extremely low concentrations of 1 ppm. Both the hole concentration per unit volume (N, cm^-3 ) and the Hall mobility (μ_H ) of bulk-doped rubrene single crystals, which have a band-like nature, are systematically observed. It is found that these rubrene single crystals have (i) a high ionization rate and (ii) scattering effects because of lattice disturbances, which are peculiar to this organic single crystal.

Electrostatic Screening of Charged Defects in Monolayer MoS2

Defects in monolayer transition-metal dichalcogenides (TMDCs) may lead to unintentional doping, charge-carrier trapping, and nonradiative recombination. These effects impair electronic and optoelectronic technologies. Here we show that charged defects in MoS₂ monolayers can be effectively screened when they are in contact with an ionic liquid (IL), leading to an increase in photoluminescence (PL) yield by up to two orders of magnitude. The extent of this PL enhancement by the IL correlates with the brightness of each pretreated sample. We propose the existence of two classes of nonradiative recombination centers in monolayer MoS₂: (i) charged defects that relate to unintentional doping and may be electrostatically screened by ILs and (ii) neutral defects that remain unaffected by the presence of ILs.

Organic Spin-Valves and Beyond: Spin Injection and Transport in Organic Semiconductors and the Effect of Interfacial Engineering

Since the first observation of the spin-valve effect through organic semiconductors, efforts to realize novel spintronic technologies based on organic semiconductors have been rapidly growing. However, a complete understanding of spin-polarized carrier injection and transport in organic semiconductors is still lacking and under debate. For example, there is still no clear understanding of major spin-flip mechanisms in organic semiconductors and the role of hybrid metal-organic interfaces in spin injection. Recent findings suggest that organic single crystals can provide spin-transport media with much less structural disorder relative to organic thin films, thus reducing momentum scattering. Additionally, modification of the band energetics, morphology, and even spin magnetic moment at the metal-organic interface by interface engineering can greatly impact the efficiency of spin-polarized carrier injection. Here, progress on efficient spin-polarized carrier injection into organic semiconductors from ferromagnetic metals by using various interface engineering techniques is presented, such as inserting a metallic interlayer, a molecular self-assembled monolayer (SAM), and a ballistic carrier emitter. In addition, efforts to realize long spin transport in single-crystalline organic semiconductors are discussed. The focus here is on understanding and maximizing spin-polarized carrier injection and transport in organic semiconductors and insight is provided for the realization of emerging organic spintronics technologies.

Organic Optoelectronic Materials: Mechanisms and Applications

Organic (opto)electronic materials have received considerable attention due to their applications in thin-film-transistors, light-emitting diodes, solar cells, sensors, photorefractive devices, and many others. The technological promises include low cost of these materials and the possibility of their room-temperature deposition from solution on large-area and/or flexible substrates. The article reviews the current understanding of the physical mechanisms that determine the (opto)electronic properties of high-performance organic materials. The focus of the review is on photoinduced processes and on electronic properties important for optoelectronic applications relying on charge carrier photogeneration. Additionally, it highlights the capabilities of various experimental techniques for characterization of these materials, summarizes top-of-the-line device performance, and outlines recent trends in the further development of the field. The properties of materials based both on small molecules and on conjugated polymers are considered, and their applications in organic solar cells, photodetectors, and photorefractive devices are discussed.

Extended carrier lifetimes and diffusion in hybrid perovskites revealed by Hall effect and photoconductivity measurements

Impressive performance of hybrid perovskite solar cells reported in recent years still awaits a comprehensive understanding of its microscopic origins. In this work, the intrinsic Hall mobility and photocarrier recombination coefficient are directly measured in these materials in steady-state transport studies. The results show that electron-hole recombination and carrier trapping rates in hybrid perovskites are very low. The bimolecular recombination coefficient (10⁻¹¹ to 10⁻¹⁰ cm³ s⁻¹) is found to be on par with that in the best direct-band inorganic semiconductors, even though the intrinsic Hall mobility in hybrid perovskites is considerably lower (up to 60 cm² V⁻¹ s⁻¹). Measured here, steady-state carrier lifetimes (of up to 3 ms) and diffusion lengths (as long as 650 μm) are significantly longer than those in high-purity crystalline inorganic semiconductors. We suggest that these experimental findings are consistent with the polaronic nature of charge carriers, resulting from an interaction of charges with methylammonium dipoles.

Hybrid perovskites exhibit long carrier diffusion lengths and lifetimes. Here, Chen et al. show experimentally that carrier recombination in perovskites is far from Langevin and closer to the best direct-bandgap semiconductors, which can be explained by the dipolar polaronic nature of charge carriers.

2D coherent charge transport in highly ordered conducting polymers doped by solid state diffusion

Doping is one of the most important methods to control charge carrier concentration in semiconductors. Ideally, the introduction of dopants should not perturb the ordered microstructure of the semiconducting host. In some systems, such as modulation-doped inorganic semiconductors or molecular charge transfer crystals, this can be achieved by spatially separating the dopants from the charge transport pathways. However, in conducting polymers, dopants tend to be randomly distributed within the conjugated polymer, and as a result the transport properties are strongly affected by the resulting structural and electronic disorder. Here, we show that in the highly ordered lamellar microstructure of a regioregular thiophene-based conjugated polymer, a small-molecule p-type dopant can be incorporated by solid state diffusion into the layers of solubilizing side chains without disrupting the conjugated layers. In contrast to more disordered systems, this allows us to observe coherent, free-electron-like charge transport properties, including a nearly ideal Hall effect in a wide temperature range, a positive magnetoconductance due to weak localization and the Pauli paramagnetic spin susceptibility.

Charge Saturation and Intrinsic Doping in Electrolyte-Gated Organic Semiconductors

Electrolyte gating enables low voltage operation of organic thin film transistors, but little is known about the nature of the electrolyte/organic interface. Here we apply charge-modulation Fourier transform infrared spectroscopy, in conjunction with electrical measurements, on a model electrolyte gated organic semiconductor interface: single crystal rubrene/ion-gel. We provide spectroscopic signature for free-hole like carriers in the organic semiconductor and unambiguously show the presence of a high density of intrinsic doping of the free holes upon formation of the rubrene/ion-gel interface, without gate bias (Vg = 0 V). We explain this intrinsic doping as resulting from a thermodynamic driving force for the stabilization of free holes in the organic semiconductor by anions in the ion-gel. Spectroscopy also reveals the saturation of free-hole like carrier density at the rubrene/ion-gel interface at Vg < -0.5 V, which is commensurate with the negative transconductance seen in transistor measurements.

Photogenerated Intrinsic Free Carriers in Small-molecule Organic Semiconductors Visualized by Ultrafast Spectroscopy

Confirmation of direct photogeneration of intrinsic delocalized free carriers in small-molecule organic semiconductors has been a long-sought but unsolved issue, which is of fundamental significance to its application in photo-electric devices. Although the excitonic description of photoexcitation in these materials has been widely accepted, this concept is challenged by recently reported phenomena. Here we report observation of direct delocalized free carrier generation upon interband photoexcitation in highly crystalline zinc phthalocyanine films prepared by the weak epitaxy growth method using ultrafast spectroscopy. Transient absorption spectra spanning the visible to mid-infrared region revealed the existence of short-lived free electrons and holes with a diffusion length estimated to cross at least 11 molecules along the π−π stacking direction that subsequently localize to form charge transfer excitons. The interband transition was evidenced by ultraviolet-visible absorption, photoluminescence and electroluminescence spectroscopy. Our results suggest that delocalized free carriers photogeneration can also be achieved in organic semiconductors when the molecules are packed properly.

Suppression of Low-Frequency Electronic Noise in Polymer Nanowire Field-Effect Transistors

The authors report on the reduction of low-frequency noise in semiconductor polymer nanowires with respect to thin-films made of the same organic material. Flicker noise is experimentally investigated in polymer nanowires in the range of 10-10(5) Hz by means of field-effect transistor architectures. The noise in the devices is well described by the Hooge empirical model and exhibits an average Hooge constant, which describes the current power spectral density of fluctuations, suppressed by 1-2 orders of magnitude compared to thin-film devices. To explain the Hooge constant reduction, a resistor network model is developed, in which the organic semiconducting nanostructures or films are depicted through a two-dimensional network of resistors with a square-lattice structure, accounting for the different anisotropy and degree of structural disorder of the active nanowires and films. Results from modeling agree well with experimental findings. These results support enhanced structural order through size-confinement in organic nanostructures as effective route to improve the noise performance in polymer electronic devices.

Negative isotope effect for charge transport in acenes and derivatives--a theoretical conclusion

The isotope effect (IE) on charge transport in polyacenes was proposed in 1970 to judge the transport mechanism. However, there had not been a definitive answer for more than 40 years as to whether such an IE is positive or negative, both theoretically and experimentally, because either theory was too approximate or the experimental estimate was too rough to make a judgment. Employing the quantum nuclear tunneling model for organic semiconductors, we investigate the IE on both hole and electron transport for acenes and their derivatives. We show that both (13)C-substitution and deuteration lead to a negative IE. By introducing phenyl, chlorine, or alkyl side-chains into acenes, the IE becomes more remarkable, especially for hole transport. The vibrational relaxation processes involving in-plane bending of ring or alkyl side-chain motions are found to be responsible for the IE.

Polarity engineering of conjugated polymers by variation of chemical linkages connecting conjugated backbones

The fine tuning of the dominant polarity in polymer semiconductors is a key issue for high-performance organic complementary circuits. In this paper, we demonstrate a new methodology for addressing this issue in terms of molecular design. In an alternating conjugated donor-acceptor copolymer system, we systematically engineered the chemical linkages that connect the aromatic units in donor moieties. Three donor moieties, thiophene-vinylene-thiophene (TVT), thiophene-acetylene-thiophene (TAT), and thiophene-cyanovinylene-thiophene (TCNT), were combined with an acceptor moiety, thienoisoindigo (TIID), and finally, three novel TIID-based copolymers were synthesized: PTIID-TVT, PTIID-TAT, and PTIID-TCNT. We found that the vinylene, acetylene, and cyanovinylene linkages decisively affect the energy structure, molecular orbital delocalization, microstructure, and, most importantly, the dominant polarity of the polymers. The vinylene-linked PTIID-TVT field-effect transistors (FETs) exhibited intrinsic hole and electron mobilities of 0.12 and 1.5 × 10(-3) cm(2) V(-1 )s(-1), respectively. By contrast, the acetylene-linked PTIID-TAT FETs exhibited significantly improved intrinsic hole and electron mobilities of 0.38 and 0.03 cm(2) V(-1) s(-1), respectively. Interestingly, cyanovinylene-linked PTIID-TCNT FETs exhibited reverse polarity, with hole and electron mobilities of 0.07 and 0.19 cm(2) V(-1) s(-1). As a result, the polarity balance, which is quantified as the electron/hole mobility ratio, was dramatically tuned from 0.01 to 2.7. Our finding demonstrates a new methodology for the molecular design of high-performance organic complementary circuits.

Molecularly clean ionic liquid/rubrene single-crystal interfaces revealed by frequency modulation atomic force microscopy

Frequency modulation atomic force microscopy was employed to show a molecularly clean interface between an ionic liquid and a rubrene single crystal for possible applications to electric double-layer field-effect transistors.

The origin of excellent gate-bias stress stability in organic field-effect transistors employing fluorinated-polymer gate dielectrics

Tuning of the energetic barriers to charge transfer at the semiconductor/dielectric interface in organic field-effect transistors (OFETs) is achieved by varying the dielectric functionality. Based on this, the correlation between the magnitude of the energy barrier and the gate-bias stress stability of the OFETs is demonstrated, and the origin of the excellent device stability of OFETs employing fluorinated dielectrics is revealed.

Low-frequency (1/f) noise in nanocrystal field-effect transistors

We investigate the origins and magnitude of low-frequency noise in high-mobility nanocrystal field-effect transistors and show the noise is of 1/f-type. Sub-band gap states, in particular, those introduced by nanocrystal surfaces, have a significant influence on the 1/f noise. By engineering the device geometry and passivating nanocrystal surfaces, we show that in the linear and saturation regimes the 1/f noise obeys Hooge's model of mobility fluctuations, consistent with transport of a high density of accumulated carriers in extended electronic states of the NC thin films. In the subthreshold regime, the Fermi energy moves deeper into the mobility gap and sub-band gap trap states give rise to a transition to noise dominated by carrier number fluctuations as described in McWhorter's model. CdSe nanocrystal field-effect transistors have a Hooge parameter of 3 × 10(-2), comparable to other solution-deposited, thin-film devices, promising high-performance, low-cost, low-noise integrated circuitry.

Theoretical Prediction of Isotope Effects on Charge Transport in Organic Semiconductors

We suggest that the nuclear tunneling effect is important in organic semiconductors, which we showed is absent in both the widely employed Marcus theory and the band-like transport as described by the deformation potential theory. Because the quantum nuclear tunneling tends to favor electron transfer while heavier nuclei decrease the quantum effect, there should occur an isotope effect for carrier mobility. For N,N'-n-bis(n-hexyl)-naphthalene diimide, electron mobility of all-deuteration on alkyls and all (13)C-substitution on the backbone decrease ∼18 and 7%, respectively. Similar isotope effects are found in the N,N'-n-bis(n-octyl)-perylene diimide. However, there is nearly no isotope effect for all-deuterated rubrene or tetracene. We have found that the isotopic effect only occurs when the substituted nuclei contribute actively to vibrations with appreciable charge reorganization energy and coupling with carrier motion. Thus, this prediction can shed light on the current dispute over the hopping versus band-like mechanisms in organic semiconductors.