Design principles for maximizing photovoltage in metal-oxide-protected water-splitting photoanodes

Industrial-Si-based photoanode for highly efficient and stable water splitting

Photoelectrochemical (PEC) water splitting is an effective and sustainable method for solar energy harvesting. However, the technology is still far away from practical application because of the high cost and low efficiency. Here, we report a low-cost, stable and high-performing industrial-Si-based photoanode (n-Indus-Si/Co-2mA-xs) that is fabricated by simple electrodeposition. Systematic characterizations such as scanning electron microscopy, X-ray photoelectron spectroscopy have been employed to characterize and understand the working mechanisms of this photoanode. The uniform and adherent dispersion of co-catalyst particles result in high built-in electric field, reduced charge transfer resistance, and abundant active sites. The core-shell structure of co-catalyst particles is formed after the activation process. The reconstructed morphology and modified chemical states of the surface co-catalyst particles improve the separation and transfer of charges, and the reaction kinetics for water oxidation greatly. Our work demonstrates that large-scale PEC water splitting can be achieved by engineering the industrial-Si-based photoelectrode, which shall guide the development of solar energy conversion in the industry.

Photoelectrochemistry of Redox-Active Self-Assembled Monolayers Formed on n-Si/Au Nanoparticle Photoelectrodes

Controlling the chemistry of the electrode-solution interface is critically important for applications in sensing, energy storage, corrosion prevention, molecular electronics, and surface patterning. While numerous methods of chemically modifying electrodes exist, self-assembled monolayers (SAMs) containing redox-active moieties are particularly important because they are easy to prepare, have well-defined interfaces, and can exhibit textbook photoelectrochemistry. Here, we investigate the photoelectrochemistry of redox-active SAMs on semiconductor/metal interfaces, where the SAM is attached to the metal site instead of the semiconductor. n-Si/Au photoelectrodes were fabricated using a benchtop electrodeposition procedure and subsequently modified by immersion in aqueous solutions of (ferrocenyl)hexanethiol and mercaptohexanol. We explored the relevant preparation conditions, finding that after optimization, we were able to obtain canonical cyclic voltammetry for a surface-bound redox molecule that could be turned on and off using light. We then characterized the optimized electrodes under varying illumination intensities, finding that the heterogeneous electron transfer kinetics improved under higher illumination intensities. These results lay the foundation for future studies of semiconductor/metal/molecule interfaces relevant to sensing and electrocatalysis.

Dissolution-Induced Surface Reconstruction of Ni0.95Pt0.05Si/p-Si Photocathode for Efficient Photoelectrochemical H2 Production

Metal silicide/Si photoelectrodes have demonstrated significant potential for application in photoelectrochemical (PEC) water splitting to produce H2. To achieve an efficient and economical hydrogen evolution reaction (HER), a paramount consideration lies in attaining exceptional catalytic activity on the metal silicide surface with minimal use of noble metals. Here, this study presents the design and construction of a novel Ni0.95Pt0.05Si/p-Si photocathode. Dopant segregation is used to achieve a Schottky barrier height as high as 1.0 eV and a high photovoltage of 420 mV. To achieve superior electrocatalytic activity for HER, a dissolution-induced surface reconstruction (SR) strategy is proposed to in situ convert surface Ni0.95Pt0.05Si to highly active Pt2Si. The resulting SR Ni0.95Pt0.05Si/p-Si photocathode exhibits excellent HER performance with an onset potential of 0.45 V (vs RHE) and a high maximum photocurrent density of 40.5 mA cm-2 and a remarkable applied bias photon-to-current efficiency (ABPE) of 5.3% under simulated AM 1.5 (100 mW cm-2) illumination. The anti-corrosion silicide layer effectively protects Si, ensuring excellent stability of the SR Ni0.95Pt0.05Si/p-Si photoelectrode. This study highlights the potential for achieving efficient PEC HER using bimetallic silicide/Si photocathodes with reduced Pt consumption, offering an auspicious perspective for the cost-effective conversion of solar energy to chemical energy.

Understanding the in-situ transformation of CuxO interlayers to increase the water splitting efficiency in NiO/n-Si photoanodes

The buried interface tens of nanometers beneath the solid-liquid junction is crucial for photocarrier extraction, influencing the overall efficiency of photoelectrochemical devices. Precise characterization of the interfacial properties is essential for device optimization but remains challenging. Here, we directly probe the in situ transformation of a CuxO interlayer at the NiO/n-Si interface by hard X-ray photoelectron spectroscopy. It is found that Cu(I) in the CuxO interlayer gradually transforms to Cu(II) with air exposure, forming an energetically more favorable interface and improving photoanode's efficiency. Based on this finding, a reactive e-beam evaporation process is developed for the direct deposition of a CuO interlayer, achieving a half-cell solar-to-hydrogen efficiency of 4.56% for the optimized NiO/CuO/n-Si heterojunction photoanode. Our results highlight the importance of precision characterization of interfacial properties with advanced hard X-ray photoelectron spectroscopy in guiding the design of efficient solar water-splitting devices.

Covalent Functionalization of Silicon with Plasma-Grown "Fuzzy" Graphene: Robust Aqueous Photoelectrodes for CO2 Reduction by Molecular Catalysts

Carbon electrodes are ideal for electrochemistry with molecular catalysts, exhibiting facile charge transfer and good stability. Yet for solar-driven catalysis with semiconductor light absorbers, stable semiconductor/carbon interfaces can be difficult to achieve, and carbon's high optical extinction means it can only be used in ultrathin layers. Here, we demonstrate a plasma-enhanced chemical vapor deposition process that achieves well-controlled deposition of out-of-plane "fuzzy" graphene (FG) on thermally oxidized Si substrates. The resulting Si|FG interfaces possess a silicon oxycarbide (SiOC) interfacial layer, implying covalent bonding between Si and the FG film that is consistent with the mechanical robustness observed from the films. The FG layer is uniform and tunable in thickness and optical transparency by deposition time. Using p-type Si|FG substrates, noncovalent immobilization of cobalt phthalocyanine (CoPc) molecular catalysts was employed for the photoelectrochemical reduction of CO2 in aqueous solution. The Si|FG|CoPc photocathodes exhibited good catalytic activity, yielding a current density of ∼1 mA/cm2, Faradaic efficiency for CO of ∼70% (balance H2), and stable photocurrent for at least 30 h at -1.5 V vs Ag/AgCl under 1-sun illumination. The results suggest that plasma-deposited FG is a robust carbon electrode for molecular catalysts and suitable for further development of aqueous-stable Si photocathodes for CO2 reduction.

Understanding Photovoltage Enhancement in Metal-Insulator Semiconductor Photoelectrodes with Metal Nanoparticles

A metal-insulator-semiconductor (MIS) structure holds great potential to promote photoelectrochemical (PEC) reactions, such as water splitting and CO2 reduction, for the storage of solar energy in chemical bonds. The semiconductor absorbs photons, creating electron-hole pairs; the insulator facilitates charge separation; and the metal collects the desired charge and facilitates its use in the electrochemical reaction. Despite these attractive features, MIS photoelectrodes are significantly limited by their photovoltage, a combination of the voltage generated from photon absorption minus the potential drop across the insulator. Herein, we use multiscale continuum modeling of the carrier, electrolyte, and interfacial transport to identify strategies for mitigating the deleterious potential drop across the insulator and enabling high MIS photovoltages. To this end, we model Ni/SiO2/n-Si photoanodes that employ a planar Ni film or Ni nanoparticles (np-MIS) and validate both models using experimental polarization curves and photovoltage measurements from the literature. The simulations reveal that the insulator potential drop is lower and hence achieves higher photovoltages for np-MIS structures than MIS structures because the electrolyte screens charge trapped at defect states between the semiconductor and the insulator. This electrolyte charge screening phenomenon can be further leveraged by using low loadings or small nanoparticles, which not only minimize the interfacial potential drop but also improve the photocurrent by enabling more light absorption. These insights contribute to the optimization of the np-MIS structures for sustainable energy conversion.

Characterizing and understanding the photovoltage in n-Si/Au light-addressable electrochemical sensors

Here, we characterize the photovoltage of n-Si/Au light-addressable electrodes (LAEs) over a range of solution potentials from ca. -1 to +1 V. We find that the n-Si/Au photoelectrodes show photovoltages consistent with a semiconductor/liquid junction in contrast to a buried junction, which opposes our previous understanding of how photovoltage originates in these sensors.

Metal-insulator-semiconductor photoelectrodes for enhanced photoelectrochemical water splitting

Photoelectrochemical (PEC) water splitting provides a scalable and integrated platform to harness renewable solar energy for green hydrogen production. The practical implementation of PEC systems hinges on addressing three critical challenges: enhancing energy conversion efficiency, ensuring long-term stability, and achieving economic viability. Metal-insulator-semiconductor (MIS) heterojunction photoelectrodes have gained significant attention over the last decade for their ability to efficiently segregate photogenerated carriers and mitigate corrosion-induced semiconductor degradation. This review discusses the structural composition and interfacial intricacies of MIS photoelectrodes tailored for PEC water splitting. The application of MIS heterostructures across various semiconductor light-absorbing layers, including traditional photovoltaic-grade semiconductors, metal oxides, and emerging materials, is presented first. Subsequently, this review elucidates the reaction mechanisms and respective merits of vacuum and non-vacuum deposition techniques in the fabrication of the insulator layers. In the context of the metal layers, this review extends beyond the conventional scope, not only by introducing metal-based cocatalysts, but also by exploring the latest advancements in molecular and single-atom catalysts integrated within MIS photoelectrodes. Furthermore, a systematic summary of carrier transfer mechanisms and interface design principles of MIS photoelectrodes is presented, which are pivotal for optimizing energy band alignment and enhancing solar-to-chemical conversion efficiency within the PEC system. Finally, this review explores innovative derivative configurations of MIS photoelectrodes, including back-illuminated MIS photoelectrodes, inverted MIS photoelectrodes, tandem MIS photoelectrodes, and monolithically integrated wireless MIS photoelectrodes. These novel architectures address the limitations of traditional MIS structures by effectively coupling different functional modules, minimizing optical and ohmic losses, and mitigating recombination losses.

Construction synergetic adsorption and activation surface via confined Cu/Cu2O and Ag nanoparticles on TiO2 for effective conversion of CO2 to CH4

High-performance photocatalysts for catalytic reduction of CO2 are largely impeded by inefficient charge separation and surface activity. Reasonable design and efficient collaboration of multiple active sites are important for attaining high reactivity and product selectivity. Herein, Cu-Cu2O and Ag nanoparticles are confined as dual sites for assisting CO2 photoreduction to CH4 on TiO2. The introduction of Cu-Cu2O leads to an all-solid-state Z-scheme heterostructure on the TiO2 surface, which achieves efficient electron transfer to Cu2O and adsorption and activation of CO2. The confined nanometallic Ag further enhances the carrier's separation efficiency, promoting the conversion of activated CO2 molecules to •COOH and further conversion to CH4. Particularly, this strategy is highlighted on the TiO2 system for a photocatalytic reduction reaction of CO2 and H2O with a CH4 generation rate of 62.5 μmol∙g-1∙h-1 and an impressive selectivity of 97.49 %. This work provides new insights into developing robust catalysts through the artful design of synergistic catalytic sites for efficient photocatalytic CO2 conversion.

Unraveling Electron Dynamics in p-type Indium Phosphide (100): A Time-Resolved Two-Photon Photoemission Study

Renewable ("green") hydrogen production through direct photoelectrochemical (PEC) water splitting is a potential key contributor to the sustainable energy mix of the future. We investigate the potential of indium phosphide (InP) as a reference material among III-V semiconductors for PEC and photovoltaic (PV) applications. The p(2 × 2)/c(4 × 2)-reconstructed phosphorus-terminated p-doped InP(100) (P-rich p-InP) surface is the focus of our investigation. We employ time-resolved two-photon photoemission (tr-2PPE) spectroscopy to study electronic states near the band gap with an emphasis on normally unoccupied conduction band states that are inaccessible through conventional single-photon emission methods. The study shows the complexity of the p-InP electronic band structure and reveals the presence of at least nine distinct states between the valence band edge and vacuum energy, including a valence band state, a surface defect state pinning the Fermi level, six unoccupied surface resonances within the conduction band, as well as a cluster of states about 1.6 eV above the CBM, identified as a bulk-to-surface transition. Furthermore, we determined the decay constants of five of the conduction band states, enabling us to track electron relaxation through the bulk and surface conduction bands. This comprehensive understanding of the electron dynamics in p-InP(100) lays the foundation for further exploration and surface engineering to enhance the properties and applications of p-InP-based III-V-compounds for, e.g., efficient and cost-effective PEC hydrogen production and highly efficient PV cells.

Simultaneous Sensing of Velocity and Position of a Moving Light Source Using Metal-Insulator-Semiconductor Structures

Photodetectors based on semiconductor devices have been widely used to sense light position, intensity, and wavelength. However, monitoring the motion velocity of a light beam generally requires complex integration of device arrays. Here, we report a single device of a simple metal-insulator-semiconductor structure for self-powered sensing not only position but also velocity of a light beam or shadow. A velocity-dependent voltage output between two terminals of the metal is observed. It is attributed to light illumination-induced local surface potential change in semiconductors and the following movement of local charges accumulated in the metal due to capacitive coupling. The amplitude of the velocity-dependent voltage can be facilely modulated by applying a gate voltage. These results shed light on compact devices with multiple sensing functions.

Local reactivity of metal-insulator-semiconductor photoanodes imaged by photoinduced electrochemiluminescence microscopy

Localized photoinduced electrochemiluminescence (PECL) is studied on photoanodes composed of Ir microbands deposited on n-Si/SiOx. We demonstrate that PECL microscopy precisely imaged the hole-driven heterogeneous photoelectrochemical reactivity. The method is promising for elucidating the local activity of photoelectrodes that are employed in solar energy conversion.

Effect of Interfacial SiOx Defects on the Functional Properties of Si-Transition Metal Oxide Photoanodes for Water Splitting

The transfer of photogenerated charges through interfaces in heterojunction photoanodes is a key process that controls the efficiency of solar water splitting. Considering Co3O4/SiOx/Si photoanodes prepared by physical vapor deposition as a representative case study, it is shown that defects normally present in the native SiOx layer dramatically affect the onset of the photocurrent. Electron paramagnetic resonance indicates that the signal of defects located in dangling bonds of trivalent Si atoms at the Si/SiOx interface vanishes upon vacuum annealing at 850 °C. Correspondingly, the photovoltage of the photoanode increases to ≈500 mV. Similar results are obtained for NiO/SiOx/Si photoanodes. Photoelectrochemical analysis and impedance spectroscopy (in solution and in the solid state) indicate how the defect annealing modifies the Co3O4/SiOx/Si junction. This work shows that defect annealing at the solid-solid interface in composite photoanodes strongly improves the efficiency of charge transfer through interfaces, which is the basis for effective solar-to-chemical energy conversion.

Atomic Layer Deposition of Defective Amorphous TiOx Thin Films with Improved Photoelectrochemical Performance

A proper control of defects in TiO2 thin films is challenging work for enhancing the photoelectrochemical (PEC) efficiency in water splitting processes. Additionally, a deep understanding of how defects affect the PEC performance of TiO2 thin films is of great interest for achieving better performance. With these aims, we prepared defective amorphous TiOx thin films at various growth temperatures by atomic layer deposition using tetrakis(dimethylamido)titanium as the Ti precursor. Careful X-ray photoelectron spectroscopy and electron spin resonance spectroscopy analyses revealed that the defect concentration in the TiOx thin films can be controlled by adjusting the growth temperature during the ALD process. We also evaluated the light absorption properties of the deposited TiOx thin films using ultraviolet-visible absorption spectroscopy. And it was found that the TiOx thin film deposited at a growth temperature of 200 °C exhibited the highest defect concentration and the highest photocurrent density of 0.051 mA/cm2 at 1.23 V vs reversible hydrogen electrode (RHE) compared to those of the other films. The light absorption efficiency, photogenerated charge separation efficiency, and charge transfer efficiency of defective amorphous TiOx thin films were carefully studied to understand the correlation between the defect concentration in the prepared TiOx thin film and its PEC activity. This study provides insight into the PEC properties of defective amorphous ALD-TiOx thin films.

Robust SrTiO3 Passivation of Silicon Photocathode by Reduced Graphene Oxide for Solar Water Splitting

Development of a robust photocathode using low-cost and high-performing materials, e.g., p-Si, to produce clean fuel hydrogen has remained challenging since the semiconductor substrate is easily susceptible to (photo)corrosion under photoelectrochemical (PEC) operational conditions. A protective layer over the substrate to simultaneously provide corrosion resistance and maintain efficient charge transfer across the device is therefore needed. To this end, in the present work, we utilized pulsed laser deposition (PLD) to prepare a high-quality SrTiO3 (STO) layer to passivate the p-Si substrate using a buffer layer of reduced graphene oxide (rGO). Specifically, a very thin (3.9 nm ∼10 unit cells) STO layer epitaxially overgrown on rGO-buffered Si showed the highest onset potential (0.326 V vs RHE) in comparison to the counterparts with thicker and/or nonepitaxial STO. The photovoltage, flat-band potential, and electrochemical impedance spectroscopy measurements revealed that the epitaxial photocathode was more beneficial for charge separation, charge transfer, and targeted redox reaction than the nonepitaxial one. The STO/rGO/Si with a smooth and highly epitaxial STO layer outperforming the directly contacted STO/Si with a textured and polycrystalline STO layer showed the importance of having a well-defined passivation layer. In addition, the numerous pinholes formed in the directly contacted STO/Si led to the rapid degradation of the photocathode during the PEC measurements. The stability tests demonstrated the soundness of the epitaxial STO layer in passivating Si against corrosion. This study provided a facile approach for preparing a robust protection layer over a photoelectrode substrate in realizing an efficient and, at the same time, durable PEC device.

Theory and Simulation of Metal-Insulator-Semiconductor (MIS) Photoelectrodes

A metal-insulator-semiconductor (MIS) structure is an attractive photoelectrode-catalyst architecture for promoting photoelectrochemical reactions, such as the formation of H₂ by proton reduction. The metal catalyzes the generation of H₂ using electrons generated by photon absorption and charge separation in the semiconductor. The insulator layer between the metal and the semiconductor protects the latter element from photo-corrosion and, also, significantly impacts the photovoltage at the metal surface. Understanding how the insulator layer determines the photovoltage and what properties lead to high photovoltages is critical to the development of MIS structures for solar-to-chemical energy conversion. Herein, we present a continuum model for charge-carrier transport from the semiconductor to the metal with an emphasis on mechanisms of charge transport across the insulator. The polarization curves and photovoltages predicted by this model for a Pt/HfO₂/p-Si MIS structure at different HfO₂ thicknesses agree well with experimentally measured data. The simulations reveal how insulator properties (i.e., thickness and band structure) affect band bending near the semiconductor/insulator interface and how tuning them can lead to operation closer to the maximally attainable photovoltage, the flat-band potential. This phenomenon is understood by considering the change in tunneling resistance with insulator properties. The model shows that the best MIS performance is attained with highly symmetric semiconductor/insulator band offsets (e.g., BeO, MgO, SiO₂, HfO₂, or ZrO₂ deposited on Si) and a low to moderate insulator thickness (e.g., between 0.8 and 1.5 nm). Beyond 1.5 nm, the density of filled interfacial trap sites is high and significantly limits the photovoltage and the solar-to-chemical conversion rate. These conclusions are true for photocathodes and photoanodes. This understanding provides critical insight into the phenomena enhancing and limiting photoelectrode performance and how this phenomenon is influenced by insulator properties. The study gives guidance toward the development of next-generation insulators for MIS structures that achieve high performance.

An integrated n-Si/BiVO4 photoelectrode with an interfacial bi-layer for unassisted solar water splitting

Integrated n-Si/BiVO4 is one of the most promising candidates for unbiased photoelectrochemical water splitting. However, a direct connection between n-Si and BiVO4 will not attain overall water splitting due to the small band offset as well as the interfacial defects at the n-Si/BiVO4 interface that severely impede carrier separation and transport, limiting the photovoltage generation. This paper describes the design and fabrication of an integrated n-Si/BiVO4 device with enhanced photovoltage extracted from the interfacial bi-layer for unassisted water splitting. An Al2O3/indium tin oxide (ITO) interfacial bi-layer was inserted at the n-Si/BiVO4 interface, which promotes the interfacial carrier transport by enlarging the band offset while healing interfacial defects. When coupled to a separate cathode for hydrogen evolution, spontaneous water splitting could be realized with this n-Si/Al2O3/ITO/BiVO4 tandem anode, with an average solar-to-hydrogen (STH) efficiency of 0.62% for over 1000 hours.

Metal-Insulator-Semiconductor Anodes for Ultrastable and Site-Selective Upconversion Photoinduced Electrochemiluminescence

Photoinduced electrochemiluminescence (PECL) allows the electrochemically assisted conversion of low-energy photons into high-energy photons at an electrode surface. This concept is expected to have important implications, however, it is dramatically limited by the stability of the surface, impeding future developments. Here, a series of metal-insulator-semiconductor (MIS) junctions, using photoactive n-type Si (n-Si) as a light absorber covered by a few-nanometer-thick protective SiO_x /metal (SiO_x /M, with M=Ru, Pt, and Ir) overlayers are investigated for upconversion PECL of the model co-reactant system involving the simultaneous oxidation of tris(bipyridine)ruthenium(II) and tri-n-propylamine. We show that n-Si/SiO_x /Pt and n-Si/SiO_x /Ir exhibit high photovoltages and record stabilities in operation (35 h for n-Si/SiO_x /Ir) for the generation of intense PECL with an anti-Stokes shift of 218 nm. We also demonstrate that these surfaces can be employed for spatially localized PECL. These unprecedented performances are extremely promising for future applications of PECL.

Interface Engineering of TiO2 Photoelectrode Coatings Grown by Atomic Layer Deposition on Silicon

Titanium dioxide (TiO2) can protect photoelectrochemical (PEC) devices from corrosion, but the fabrication of high-quality TiO2 coatings providing long-term stability has remained challenging. Here, we compare the influence of Si wafer cleaning and postdeposition annealing temperature on the performance of TiO2/n+-Si photoanodes grown by atomic layer deposition (ALD) using tetrakis(dimethylamido)titanium (TDMAT) and H2O as precursors at a growth temperature of 100 °C. We show that removal of native Si oxide before ALD does not improve the TiO2 coating performance under alkaline PEC water splitting conditions if excessive postdeposition annealing is needed to induce crystallization. The as-deposited TiO2 coatings were amorphous and subject to photocorrosion. However, the TiO2 coatings were found to be stable over a time period of 10 h after heat treatment at 400 °C that induced crystallization of amorphous TiO2 into anatase TiO2. No interfacial Si oxide formed during the ALD growth, but during the heat treatment, the thickness of interfacial Si oxide increased to 1.8 nm for all of the samples. Increasing the ALD growth temperature to 150 °C enabled crystallization at 300 °C, which resulted in reduced growth of interfacial Si oxide followed by a 70 mV improvement in the photocurrent onset potential.

Kinetic photovoltage along semiconductor-water interfaces

External photo-stimuli on heterojunctions commonly induce an electric potential gradient across the interface therein, such as photovoltaic effect, giving rise to various present-day technical devices. In contrast, in-plane potential gradient along the interface has been rarely observed. Here we show that scanning a light beam can induce a persistent in-plane photoelectric voltage along, instead of across, silicon-water interfaces. It is attributed to the following movement of a charge packet in the vicinity of the silicon surface, whose formation is driven by the light-induced potential change across the capacitive interface and a high permittivity of water with large polarity. Other polar liquids and hydrogel on silicon also allow the generation of the in-plane photovoltage, which is, however, negligible for nonpolar liquids. Based on the finding, a portable silicon-hydrogel array has been constructed for detecting the shadow path of a moving Cubaris. Our study opens a window for silicon-based photoelectronics through introducing semiconductor-water interfaces.

Hematite Photoanodes for Water Oxidation: Electronic Transitions, Carrier Dynamics, and Surface Energetics

We review the current understanding of charge carriers in model hematite photoanodes at different stages. The origin of charge carriers is discussed based on the electronic structure and absorption features, highlighting the controversial assignment of the electronic transitions near the absorption edge. Next, the dynamic evolution of charge carriers is analyzed both on the ultrafast and on the surface reaction timescales, with special emphasis on the arguable spectroscopic assignment of electrons/holes and their kinetics. Further, the competitive charge transfer centers at the solid-liquid interface are reviewed, and the chemical nature of relevant surface states is updated. Finally, an overview on the function of widely employed surface cocatalysts is given to illustrate the complex influence of physiochemical modifications on the charge carrier dynamics. The understanding of charge carriers from their origin all the way to their interfacial transfer is vital for the future of photoanode design.

Immobilising molecular Ru complexes on a protective ultrathin oxide layer of p-Si electrodes towards photoelectrochemical CO2 reduction

Photoelectrochemical CO2 reduction is a promising approach for renewable fuel generation and to reduce greenhouse gas emissions. Owing to their synthetic tunability, molecular catalysts for the CO2 reduction reaction can give rise to high product selectivity. In this context, a RuII complex [Ru(HO-tpy)(6-mbpy)(NCCH3)]2+ (HO-tpy = 4'-hydroxy-2,2':6',2''-terpyridine; 6-mbpy = 6-methyl-2,2'-bipyridine) was immobilised on a thin SiOx layer of a p-Si electrode that was decorated with a bromide-terminated molecular layer. Following the characterisation of the assembled photocathodes by X-ray photoelectron spectroscopy and ellipsometry, PEC experiments demonstrate electron transfer from the p-Si to the Ru complex through the native oxide layer under illumination and a cathodic bias. A state-of-the-art photovoltage of 570 mV was determined by comparison with an analogous n-type Si assembly. While the photovoltage of the modified photocathode is promising for future photoelectrochemical CO2 reduction and the p-Si/SiOx junction seems to be unchanged during the PEC experiments, a fast desorption of the molecular Ru complex was observed. An in-depth investigation of the cathode degradation by comparison with reference materials highlights the role of the hydroxyl functionality of the Ru complex to ensure its grafting on the substrate. In contrast, no essential role for the bromide function on the Si substrate designed to engage with the hydroxyl group of the Ru complex in an SN2-type reaction could be established.

Spatial decoupling of light absorption and reaction sites in n-Si photocathodes for solar water splitting

Metal-insulator-semiconductor (MIS) photocathodes offer a simple alternative to p-n junction photocathodes in photoelectrochemical water splitting. However, the parasitic light absorption of catalysts and metal layers in the MIS junction, as well as the lack of low work function metals to form a large band offset with p-Si, severely limit their performance. This paper describes an MIS photocathode fabricated from n-Si, rather than the commonly used p-Si, to spatially decouple light absorption from reaction sites, which enables the majority carriers, instead of the commonly used minority carriers, to drive the surface reaction, making it possible to place the reaction sites far away from the light absorption region. Thus, the catalysts could be moved to the backside of the MIS junction to avoid light shielding. Moreover, the adoption of n-Si unlocks a variety of high work function materials for photovoltage generation. The obtained n-Si MIS photocathode exhibits an applied bias photon-to-current efficiency of 10.26% with a stability up to 300 h.

Development of a photoelectrochemically self-improving Si/GaN photocathode for efficient and durable H2 production

Development of an efficient yet durable photoelectrode is of paramount importance for deployment of solar-fuel production. Here, we report the photoelectrochemically self-improving behaviour of a silicon/gallium nitride photocathode active for hydrogen production with a Faradaic efficiency approaching ~100%. By using a correlative approach based on different spectroscopic and microscopic techniques, as well as density functional theory calculations, we provide a mechanistic understanding of the chemical transformation that is the origin of the self-improving behaviour. A thin layer of gallium oxynitride forms on the side walls of the gallium nitride grains, via a partial oxygen substitution at nitrogen sites, and displays a higher density of catalytic sites for the hydrogen-evolving reaction. This work demonstrates that the chemical transformation of gallium nitride into gallium oxynitride leads to sustained operation and enhanced catalytic activity, thus showing promise for oxynitride layers as protective catalytic coatings for hydrogen evolution.

Scalable, highly stable Si-based metal-insulator-semiconductor photoanodes for water oxidation fabricated using thin-film reactions and electrodeposition

Metal-insulator-semiconductor (MIS) structures are widely used in Si-based solar water-splitting photoelectrodes to protect the Si layer from corrosion. Typically, there is a tradeoff between efficiency and stability when optimizing insulator thickness. Moreover, lithographic patterning is often required for fabricating MIS photoelectrodes. In this study, we demonstrate improved Si-based MIS photoanodes with thick insulating layers fabricated using thin-film reactions to create localized conduction paths through the insulator and electrodeposition to form metal catalyst islands. These fabrication approaches are low-cost and highly scalable, and yield MIS photoanodes with low onset potential, high saturation current density, and excellent stability. By combining this approach with a p⁺n-Si buried junction, further improved oxygen evolution reaction (OER) performance is achieved with an onset potential of 0.7 V versus reversible hydrogen electrode (RHE) and saturation current density of 32 mA/cm² under simulated AM1.5G illumination. Moreover, in stability testing in 1 M KOH aqueous solution, a constant photocurrent density of ~22 mA/cm² is maintained at 1.3 V versus RHE for 7 days.

Authors demonstrate Si-based MIS photoanodes using Al thin-film reactions to create localized conduction paths through the insulator and Ni electrodeposition to form metal catalyst islands. These approaches yielded low onset potential, high saturation current density, and excellent stability.

Design Principles for Efficient and Stable Water Splitting Photoelectrocatalysts

ConspectusPhotoelectrochemical water splitting is a promising avenue for sustainable production of hydrogen used in the chemical industry and hydrogen fuel cells. The basic components of most photoelectrochemical water splitting systems are semiconductor light absorbers coupled to electrocatalysts, which perform the desired chemical reactions. A critical challenge for the design of these systems is the lack of stability for the majority of desired semiconductors under operating water splitting conditions. One strategy to address this issue is to protect the semiconductor by covering it with a stabilizing insulator layer, creating a metal-insulator-semiconductor (MIS) architecture, which has demonstrated improved stability. In addition to enhanced stability, the insulator layer may significantly affect the electron and hole transfer, which governs the recombination rates. Furthermore, the insertion of an insulator layer leads to the introduction of additional insulator/electrocatalyst and insulator/semiconductor interfaces. These interfaces can impact the system's performance significantly, and they need to be carefully engineered to optimize the efficiencies of MIS systems. In this Account, we describe our recent progress in shedding light on the critical role of the insulator and the interfaces on the performance of MIS systems. We discuss our findings by focusing on the concrete example of planar n-type Si protected by a HfO₂ insulator layer and coupled to a Ni or Ir electrocatalyst that performs the oxygen evolution reaction, one of the water splitting half-reactions. To improve our fundamental understanding of the insulator layer, we precisely control the HfO₂ insulator thickness using atomic layer deposition (ALD), and we perform a series of rigorous electrochemical experiments coupled with theory and modeling. We demonstrate that by tuning the insulator thickness, we can control the flux and recombination of photogenerated electrons and holes to optimize the generated photovoltage. Despite optimizing the thickness, we find that the maximum generated photovoltage in MIS systems is often significantly lower than the upper performance limit, i.e., there are additional losses in the system that could not be addressed by optimizing the insulator thickness. We identify the sources of these losses and describe strategies to minimize them by a combination of improving the semiconductor light absorption, removing nonidealities associated with interfacial defects, and finding alternative insulators with improved charge carrier selectivity. Finally, we quantify the improvements that can be obtained by implementing these specific strategies. Our collective work outlines strategies to analyze MIS systems, identify the sources of efficiency losses, and optimize the design to approach the fundamental performance limits. These general approaches are broadly applicable to photoelectrochemical materials that utilize sunlight to produce value-added chemicals.

Custom plating of nanoscale semiconductor/catalyst junctions for photoelectrochemical water splitting

Photoelectrochemical water splitting under harsh chemical conditions can be promoted by dispersed transition metal nanoparticles electrodeposited on n-Si surfaces, without the need for classical protection layers. Although this method is simple, it only allows for poor control of metal morphology and geometry on the photoanode surface. Herein, we introduce templated nanoscale electrodeposition on photoactive n-Si for the customization of nanoscale inhomogeneous Schottky junctions and demonstrate their use as stable photoanodes. The photoelectrochemical properties of the so-manufactured photoanodes exhibit a strong dependence on the photoanodes' geometrical features, and the obtained experimental trends are rationalized using simulation.

Pt/AlGaN Nanoarchitecture: Toward High Responsivity, Self-Powered Ultraviolet-Sensitive Photodetection

Energy-saving photodetectors are the key components in future photonic systems. Particularly, self-powered photoelectrochemical-type photodetectors (PEC-PDs), which depart completely from the classical solid-state junction device, have lately intrigued intensive interest to meet next-generation power-independent and environment-sensitive photodetection. Herein, we construct, for the first time, solar-blind PEC PDs based on self-assembled AlGaN nanostructures on silicon. Importantly, with the proper surface platinum (Pt) decoration, a significant boost of photon responsivity by more than an order of magnitude was achieved in the newly built Pt/AlGaN nanoarchitectures, demonstrating strikingly high responsivity of 45 mA/W and record fast response/recovery time of 47/20 ms without external power source. Such high solar-blind photodetection originates from the unparalleled material quality, fast interfacial kinetics, as well as high carrier separation efficiency which suggests that embracement of defect-free wide-bandgap semiconductor nanostructures with appropriate surface decoration offers an unprecedented opportunity for designing future energy-efficient and large-scale optoelectronic systems on a silicon platform.

Reaction kinetics and interplay of two different surface states on hematite photoanodes for water oxidation

Understanding the function of surface states on photoanodes is crucial for unraveling the underlying reaction mechanisms of water oxidation. For hematite photoanodes, only one type of surface states with higher oxidative energy (S1) has been proposed and verified as reaction intermediate, while the other surface state located at lower potentials (S2) was assigned to inactive or recombination sites. Through employing rate law analyses and systematical (photo)electrochemical characterizations, here we show that S2 is an active reaction intermediate for water oxidation as well. Furthermore, we demonstrate that the reaction kinetics and dynamic interactions of both S1 and S2 depend significantly on operational parameters, such as illumination intensity, nature of the electrolyte, and applied potential. These insights into the individual reaction kinetics and the interplay of both surface states are decisive for designing efficient photoanodes.

Interface engineering of a hierarchical ZnxCd1-xS architecture with favorable kinetics for high-performance solar water splitting

Manipulating the charge carrier transport in photoactive materials is a big challenge toward high efficiency solar water splitting. Herein, we designed a hierarchical ZnxCd1-xS architecture for tuning the interfacial charge transfer kinetics. The in situ growth of ZnxCd1-xS nanoflakes on ZnO backbones provided low interfacial resistance for charge separation. With this special configuration, the optimized Zn0.33Cd0.67S photoanode achieved significantly enhanced performance with a photocurrent density of 10.67 mA cm-2 at 1.23 V versus RHE under AM1.5G solar light irradiation, which is about 14.1 and 2.5 times higher than that of the pristine ZnO and CdS nanoparticle decorated ZnO photoanodes, respectively. After coating a thin SiO2 layer, the photostability of the hierarchical Zn0.33Cd0.67S photoanode is greatly enhanced with 92.33% of the initial value retained under 3600 s continuous light illumination. The prominent PEC activity of the hierarchical ZnxCd1-xS nanorod arrays can be ascribed to an enhanced charge transfer rate aroused by the binder-free interfacial heterojunction, and the improved reaction kinetics at the electrode-electrolyte interface, which is evidenced by electrochemically active surface area measurements and intensity modulated photocurrent spectroscopy analysis. This interfacial heterojunction strategy provides a promising pathway to prepare high performance photoelectrodes.

Metal Silicidation in Conjunction with Dopant Segregation: A Promising Strategy for Fabricating High-Performance Silicon-Based Photoanodes

Silicon (Si)-based Schottky junction photoelectrodes have attracted considerable attention for photoelectrochemical (PEC) water splitting in recent years. To realize highly efficient Si-based Schottky junction photoelectrodes, the critical challenge is to enable the photoelectrodes to not only have a high Schottky barrier height (SBH), by which a high photovoltage can be obtained, but also ensure an efficient charge transport. Here, we propose and demonstrate a strategy to fabricate a high-performance NiSi/n-Si Schottky junction photoanode by metal silicidation in conjunction with dopant segregation (DS). The metal silicidation produces photoanodes with a high-quality NiSi/Si interface without a disordered SiO₂ layer, which ensures highly efficient charge transport, and thus a high saturated photocurrent density of 33 mA cm^-2 was attained for the photoanode. The subsequent DS gives the photoanodes a high SBH of 0.94 eV through the introduction of electric dipoles at the NiSi/n-Si interface. As a result, a high photovoltage and favorable onset potential of 1.03 V vs RHE was achieved. In addition, the strong alkali corrosion resistance of NiSi also endows the photoanode with a high stability during PEC operation in 1 M KOH. Our work provides a universal strategy to fabricate metal-silicide/Si Schottky junction photoelectrodes for high-performance PEC water splitting.

Highly stable all-in-one photoelectrochemical electrodes based on carbon nanowalls

Photoelectrochemical (PEC) cells offer a promising approach for developing low-cost solar energy conversion systems. However, the lack of stable and cost-effective electrodes remains a bottleneck that hampers their practical applications. Here, we propose a kind of integrated all-in-one three-dimensional (3D) carbon nanowall (CNW) electrode without sensitized semiconductors for stable all-carbon PEC cells. The all-in-one CNW electrodes were fabricated by directly growing CNW on both sides of the SiO₂/Si/SiO₂ wafer employing the radio frequency plasmon enhanced chemical vapor deposition method. Benefitting from the interconnected 3D textured structure, the CNW can effectively absorb the incident light and provide a large electrochemical reaction interface at the CNW surface that promotes the separation of photogenerated charge carriers, which makes it a superior electrode material. Experimental results show that the all-in-one CNW electrodes possess excellent PEC performance with a photocurrent density of 830 μA cm^-2. Moreover, the CNW electrodes exhibit excellent photoresponses over a wide waveband and superior stability with a maintained photocurrent response, even after 60 d, which outperforms the electrodes using the other two-dimensional layered materials or semiconductor sensitized electrodes. Such an all-in-one electrode with impressive photovoltaic properties provides a promising platform for PEC applications that is eco-friendly with high efficiency, excellent stability and low cost.

Recent Progress and Development in Inorganic Halide Perovskite Quantum Dots for Photoelectrochemical Applications

Inorganic halide perovskite quantum dots (IHPQDs) have recently emerged as a new class of optoelectronic nanomaterials that can outperform the existing hybrid organometallic halide perovskite (OHP), II-VI and III-V groups semiconductor nanocrystals, mainly due to their relatively high stability, excellent photophysical properties, and promising applications in wide-ranging and diverse fields. In particular, IHPQDs have attracted much recent attention in the field of photoelectrochemistry, with the potential to harness their superb optical and charge transport properties as well as spectacular characteristics of quantum confinement effect for opening up new opportunities in next-generation photoelectrochemical (PEC) systems. Over the past few years, numerous efforts have been made to design and prepare IHPQD-based materials for a wide range of applications in photoelectrochemistry, ranging from photocatalytic degradation, photocatalytic CO₂ reduction and PEC sensing, to photovoltaic devices. In this review, the recent advances in the development of IHPQD-based materials are summarized from the standpoint of photoelectrochemistry. The prospects and further developments of IHPQDs in this exciting field are also discussed.

Layer-resolved ultrafast extreme ultraviolet measurement of hole transport in a Ni-TiO2-Si photoanode

Metal oxide semiconductor junctions are central to most electronic and optoelectronic devices, but ultrafast measurements of carrier transport have been limited to device-average measurements. Here, charge transport and recombination kinetics in each layer of a Ni-TiO2-Si junction is measured using the element specificity of broadband extreme ultraviolet (XUV) ultrafast pulses. After silicon photoexcitation, holes are inferred to transport from Si to Ni ballistically in ~100 fs, resulting in characteristic spectral shifts in the XUV edges. Meanwhile, the electrons remain on Si. After picoseconds, the transient hole population on Ni is observed to back-diffuse through the TiO2, shifting the Ti spectrum to a higher oxidation state, followed by electron-hole recombination at the Si-TiO2 interface and in the Si bulk. Electrical properties, such as the hole diffusion constant in TiO2 and the initial hole mobility in Si, are fit from these transient spectra and match well with values reported previously.

A Spin Coating Method To Deposit Iridium-Based Catalysts onto Silicon for Water Oxidation Photoanodes

Silicon has shown promise for use as a small band gap (1.1 eV) absorber material in photoelectrochemical (PEC) water splitting. However, the limited stability of silicon in acidic electrolyte requires the use of protection strategies coupled with catalysts. Herein, spin coating is used as a versatile method to directly coat silicon photoanodes with an IrO_x oxygen evolution reaction (OER) catalyst, reducing the processing complexity compared to conventional fabrication schemes. Biphasic strontium chloride/iridium oxide (SrCl₂:IrO_x) catalysts are also developed, and both catalysts form photoactive junctions with silicon and demonstrate high photoanode activity. The iridium oxide photoanode displays a photocurrent onset at 1.06 V vs reversible hydrogen electrode (RHE), while the SrCl₂:IrO_x photoanode onsets earlier at 0.96 V vs RHE. The differing potentials are consistent with the observed photovoltages of 0.43 and 0.53 V for the IrO_x and SrCl₂:IrO_x, respectively. By measuring the oxidation of a reversible redox couple, Fe(CN)₆^3-/4-, we compare the charge carrier extraction of the devices and show that the addition of SrCl₂ to the IrO_x catalyst improves the silicon-electrolyte interface compared to pure IrO_x. However, the durability of the strontium-containing photoanode remains a challenge, with its photocurrent density decreasing by 90% over 4 h. The IrO_x photoanode, on the other hand, maintained a stable photocurrent density over this timescale. Characterization of the as-prepared and post-tested material structure via Auger electron spectroscopy identifies catalyst film cracking and delamination as the primary failure modes. We propose that improvements to catalyst adhesion should further the viability of spin coating as a technique for photoanode preparation.

Charge Transfer in c-Si(n++)/TiO2(ALD) at the Amorphous/Anatase Transition: A Transient Surface Photovoltage Spectroscopy Study

Electronic properties and charge transfer processes were studied in an n-Si(n⁺⁺)/TiO₂(ALD) system at an amorphous TiO₂/anatase transition by transient surface photovoltage spectroscopy at constant photon flux. The TiO₂ layers were deposited by atomic layer deposition (ALD) onto highly doped silicon (c-Si(n⁺⁺)), and the phase composition of the TiO₂ layers changed with increasing thickness from amorphous to the anatase polymorph as anatase crystallites started to grow at the surface. Depending on phase composition, the band gap of TiO₂ correlated with the characteristic energy of exponential tails. In most cases, photogenerated electrons were separated toward the back contact. For photogeneration in c-Si(n⁺⁺), electron back transfer was limited by Auger recombination with holes in the surface space charge region of c-Si(n⁺⁺), and by electron transfer across the interface, either via exponentially distributed states near the conduction band edge of amorphous TiO₂ or via distance-dependent recombination with holes trapped in anatase. For photogeneration in TiO₂, electron back transfer was limited by trapping in TiO₂. Under strong light absorption in amorphous TiO₂ with anatase crystallites on top, electrons were preferentially separated toward the TiO₂ surface.

A semiconductor junction photoelectrochemical device without a depletion region

Semiconductor junctions are believed to form a depletion region at the band edge of the semiconductor as the chemical potentials for electrons (work functions) are aligned to the same level. Here, we demonstrated that ultrathin Ni film (less than 4 nm thick)/Si junction-based photoelectrochemical (PEC) devices have no depletion region due to three distinct phenomena: (i) the electrostatic or electrochemical potential extrinsically charged to the electrolytic-capacitive Ni surface dominates rather than the chemical potential of electrons (work function) of the bulk Ni, (ii) the charged potential is dynamically variable depending on the reaction and is rapidly volatile so as not to be constant; therefore, (iii) the charged potential is misaligned with the chemical potential of Si under equivalent circuit conditions. Such junction PEC devices were shown to follow a novel operating principle in which the output voltage (open circuit potential) is generated by the electrochemical potential charged at the Ni surface, and not by the light-induced potential (photovoltage) in Si. In addition, due to the bipolar charging nature, the ultrathin Ni film was effective in achieving a high open circuit potential in both p-Si photocathodes (0.57 V) and n-Si photoanodes (0.45 V). These anomalous results were not explained by the classical Schottky diode model based on the equilibrium of diffusion-drift current but by establishing a new model based on the equilibrium of the diffusion-charging current without accounting for the depletion region. Our findings provide an explanation for the unexpected results of the nanostructured PEC devices and insight into a new design that can overcome conventional limitations.

Identifying protons trapped in hematite photoanodes through structure-property analysis

Uncertainty regarding the nature of structural defects in hematite and their specific impacts on material properties and photoelectrocatalytic water oxidation inhibits their development as photoanodes. We perform structure–property analysis on a series of hematite films fabricated by annealing lepidocrocite films with varied temperatures, annealing times and atmospheres and find a gradient in the magnitude of a crystal lattice distortion by tracking the relative intensity of a formally Raman inactive vibrational mode. Structure–property analysis reveals that this feature in the Raman spectrum correlates to photocurrent density, semiconductor band positions, and the onset of photoelectrocatalysis. We propose that the onset of photoelectrocatalysis is linked to the location of defects that act as intraband recombination sites; an increase in the degree of structural distortion shifts these states towards the conduction band, thereby facilitating recombination. Analysis of the nature of the key Raman vibrations, X-ray diffraction patterns, and the synthetic conditions leads us to assign the distortion to iron vacancies that are induced by the trapping of protons within the crystal lattice. The ability to rapidly diagnose a specific structural defect will aid in the optimization of fabrication protocols for hematite photoanodes.

Features in Raman spectra are found to correlate to the band structure and photoelectrochemical behavior across a series of hematite photoanodes. Analysis suggests the presence of iron vacancies caused by the trapping of interstitial protons.

Colloidal silver diphosphide (AgP2) nanocrystals as low overpotential catalysts for CO2 reduction to tunable syngas

Production of syngas with tunable CO/H₂ ratio from renewable resources is an ideal way to provide a carbon-neutral feedstock for liquid fuel production. Ag is a benchmark electrocatalysts for CO₂-to-CO conversion but high overpotential limits the efficiency. We synthesize AgP₂ nanocrystals (NCs) with a greater than 3-fold reduction in overpotential for electrochemical CO₂-to-CO reduction compared to Ag and greatly enhanced stability. Density functional theory calculations reveal a significant energy barrier decrease in the formate intermediate formation step. In situ X-ray absorption spectroscopy (XAS) shows that a maximum Faradaic efficiency is achieved at an average silver valence state of +1.08 in AgP₂ NCs. A photocathode consisting of a n⁺p-Si wafer coated with ultrathin Al₂O₃ and AgP₂ NCs achieves an onset potential of 0.2 V vs. RHE for CO production and a partial photocurrent density for CO at −0.11 V vs. RHE (j_{−0.11, CO}) of −3.2 mA cm⁻².

Conversion of CO₂ into value-added chemicals by use of renewable energy is promising to achieve a carbon-neutral energy cycle. Here, the authors show that AgP₂ is a stable, selective and efficient syngas catalyst for solar-to-fuel conversion with a 3-fold lower overpotential compared to the benchmark Ag catalyst.