Metal oxides for optoelectronic applications

Effective prediction of SnO2 conduction band edge potential: The key role of surface oxygen vacancies

Several theoretical studies at different levels of theory have attempted to calculate the absolute position of the SnO2 conduction band, whose knowledge is key for its effective application in optoelectronic devices such us, for example, perovskite solar cells. However, the predicted band edges fall outside the experimentally measured range. In this work, we introduce a computational scheme designed to calculate the conduction band minimum values of SnO2, yielding results aligned with experiments. Our analysis points out the fundamental role of encompassing surface oxygen vacancies to properly describe the electronic profile of this material. We explore the impact of both bridge and in-plane oxygen vacancy defects on the structural and electronic properties of SnO2, explaining from an atomistic perspective the experimental observables. The results underscore the importance of simulating both types of defects to accurately predict SnO2 features and provide new fundamental insights that can guide future studies concerning design and optimization of SnO2-based materials and functional interfaces.

A systematic DFT study of structure and electronic properties of titanium dioxide

DFT functionals are of paramount importance for an accurate electronic and structural description of transition metal systems. In this work, a systematic analysis using some well-known and commonly used DFT functionals is performed. A comparison of the structural and energetic parameters calculated with the available experimental data is made in order to find the adequate functional for an accurate description of the TiO2 bulk and surface of both anatase and rutile structures. In the absence of experimental data on the surface energy, the theoretical predictions obtained using the high-accuracy HSE06 functional were used as a reference to compare against the surface energy values calculated with the other DFT functionals. A clear improvement in the electronic description of both anatase and rutile was observed by introducing the Hubbard U correction term to PBE, PW91, and OptPBE functionals. The OptPBE-U4 functional was found to offer a good compromise between accurately describing the structural and electronic properties of titania.

3D Nanoprinting of Heterogeneous Metal Oxides with High Shape Fidelity

3D nanoprinting can significantly enhance the performance of sensors, batteries, optoelectronic/microelectronic devices, etc. However, current 3D nanoprinting methods for metal oxides are suffering from three key issues including limited material applicability, serious shape distortion, and the difficulty of heterogeneous integration. This paper discovers a mechanism in which imidazole and acrylic acid synergistically coordinate with metal ions in water. Using the mechanism, this work develops a series of metal ion synergistic coordination water-soluble (MISCWS) resins for 3D nanoprinting of various metal oxides, including MnO2, Cr2O3, Co3O4, and ZnO, as well as heterogeneous structures of MnO2/NiO, Cr2O3/Al2O3, and ZnO/MgO. Besides, the synergistic coordination effect results in a 2.54-fold increase in inorganic mass fraction within the polymer, compared with previous works, which effectively mitigates the shape distortion of metal oxide microstructures. Based on this method, this work also demonstrates a 3D ZnO microsensor with a high sensitivity (1.113 million at 200 ppm NO2), surpassing the conventional 2D ZnO sensors by tenfold. The method yields high-fidelity 3D structures of heterogeneous metal oxides with nanoscale resolution, paving the way for applications such as sensing, micro-optics, energy storage, and microsystems.

Tunable synaptic behaviors of solution-processed InGaO films for artificial visual systems

Due to their persistent photoconductivity, amorphous metal oxide thin films are promising for construction of artificial visual systems. In this work, large-scale, uniformly distributed amorphous InGaO thin films with an adjustable In/Ga ratio and thickness are prepared successfully by a low-cost environmentally friendly and easy-to-handle solution process for constructing artificial visual systems. With the increase of the In/Ga ratio and film thickness, the number of oxygen vacancies increases, along with the increase of post-synaptic current triggered by illumination, benefiting the transition of short-term plasticity to long-term plasticity. With an optimal In/Ga ratio and film thickness, the conductance response difference at a decay of 0 s between the 1st and the 10th views of a 5 × 5 array InGaO thin film transistor is up to 2.88 μA, along with an increase in the Idecay 30s/Idecay 0s ratio from 45.24% to 53.24%, resulting in a high image clarity and non-volatile artificial visual memory. Furthermore, a three-layer artificial vision network is constructed to evaluate the image recognition capability, exhibiting an accuracy of up to 91.32%. All results promise low-cost and easy-to-handle amorphous InGaO thin films for future visual information processing and image recognition.

Interfacial Engineering of Fluorescent Carbon Dots with Metal Oxides for Real-Time Visualization of Oxygen Vacancy Dynamics

Oxygen vacancy (Vo), as one of the most common surface defects, significantly influence the physiochemical properties of metal oxides. However, it remains a challenge for existing techniques to visualize the evolution of Vo during redox process due to its heterogeneous distribution, small size, and dynamic nature. Herein, the real-time monitoring of such microscopic interfacial events is reported by advantage of the high-contrast fluorescence response of carbon dots (H-CDs) to Vo. The green emissive H-CDs possess a unique disc-shaped structure and exceptional hydrophilicity, allowing their tight adhesion to the surfaces of Vo-rich MgO by simple mixing. Subsequently, a water involved interfacial reaction occurred between H-CDs and Vo, resulting in gradual quenching of the original green emission and simultaneously emergence of bright red fluorescence. Moreover, the spatiotemporal diffusion dynamics and reaction kinetics are investigated by confocal laser scanning microscopy, revealing the time-dependent reorganization and structural heterogeneity at the interface. The finding provides a new toolbox for in situ imaging of Vo-triggered phenomena at a microscopic level, which will be helpful in promoting the rational design of oxide materials.

ZnO:CuO Composites Obtained by Rapid Joule Heating for Photocatalysis

Semiconductor oxides belonging to various families are ideal candidates for application in photocatalytic processes. One of the challenges facing photocatalytic processes today is improving their efficiency under sunlight irradiation. In this study, the growth and characterization of semiconductor oxide nanostructures and composites based on the ZnO and CuO families are proposed. The selected growth method is the resistive heating of Zn and Cu wires to produce the corresponding oxides, combined with galvanic corrosion of Zn. An exhaustive characterization of the materials obtained has been carried out using techniques based on scanning electron microscopy and optical spectroscopies. The method we have followed and the conditions used in this study present promising results, not only from a degradation efficiency point of view but also because it is a cheap, easy, and fast growth method. These characteristics are essential in order to scale the process beyond the laboratory.

Improving structural and magnetic properties of zinc stannate thin films through nickel doping via sol-gel method

Ternary oxides are currently emerging as promising materials for optoelectronic devices and spintronics, surpassing binary oxides in terms of their superior properties. Among these, zinc stannate (Zn2SnO4) stands out due to its stability and attractive physical characteristics. However, despite its outstanding attributes, there is a need to further develop its magnetic properties for spintronic applications. In this study, Ni-doped Zn2SnO4 thin films were synthesized using the sol-gel method, and their magnetic characteristics were investigated for the first time. X-ray diffraction analysis confirmed the high crystallinity of the synthesized samples, even after the incorporation of Ni dopants, without any secondary phases. SEM imaging revealed the cubic structure morphology of the thin films. An increase in the bandgap, dependent on the Ni dopant concentration, was observed for doped zinc stannate, suggesting potential for tailored electronic properties. FTIR spectroscopy confirmed the presence of functional groups within the material. Notably, the magnetic properties of the thin films were analyzed using a vibrating sample magnetometer (VSM), revealing diamagnetic behavior for pure zinc stannate and ferromagnetic properties for Ni-doped Zn2SnO4, which increased with dopant concentration. Overall, the results highlight the excellent structural, optical, and ferromagnetic properties of Ni-doped Zn2SnO4 thin films, positioning them for diverse applications, particularly in optoelectronic and spintronic technology.

The Huge Role of Tiny Impurities in Nanoscale Synthesis

Nanotechnology is vital to many current industries, including electronics, energy, textiles, agriculture, and theranostics. Understanding the chemical mechanisms of nanomaterial synthesis has contributed to the tunability of their unique properties, although studies frequently overlook the potential impact of impurities. Impurities can show adverse effects, clouding the interpretation of results or limiting the practical utility of the nanomaterial. On the other hand, as successful doping has demonstrated, the intentional introduction of impurities can be a powerful tool for enhancing the properties of a nanomaterial. This Review examines the complex role of impurities, unintentionally or intentionally added, during nanoscale synthesis and their effects on the performance and usefulness of the most common classes of nanomaterials: nanocarbons, noble metal and metal oxide nanoparticles, semiconductor quantum dots, thermoelectrics, and perovskites.

Tuning the Threshold Voltage of an Oxide Thin-Film Transistor by Electron Injection Control Using a p-n Semiconductor Heterojunction Structure

Herein, a heterojunction structure integrating p-type tellurium (Te) and n-type aluminum-doped indium-zinc-tin oxide (Al:IZTO) is shown to precisely modulate the threshold voltage (VT) of the oxide thin-film transistor (TFT). The proposed architecture integrates Te as an electron-blocking layer and Al:IZTO as a charge-carrier transporting layer, thereby enabling controlled electron injection. The effects of incorporating the Te layer onto Al:IZTO are investigated, with a focus on X-ray photoelectron spectroscopy (XPS) analysis, in order to explain the behavior of oxygen vacancies and to depict the energy band structure configurations. By modulating the thickness and employing both single and double deposition methods for the heterojunction Te layer, a remarkable VT shift of up to +20 V is achieved. Furthermore, this study also shows excellent stability to a positive bias stress of +2 MV/cm for 10,000 s without additional passivation layers, demonstrating the robustness of the designed TFT. By a thorough optimization of the Al:IZTO/Te interface, the results demonstrate not only the substantial impact of the introduced heterojunction structure on VT control but also the endurance, durability, and stability of the optimized TFTs under prolonged long-term operating stress, thus offering promising prospects for tailored semiconductor device applications.

An inorganic-blended p-type semiconductor with robust electrical and mechanical properties

Inorganic semiconductors typically have limited p-type behavior due to the scarcity of holes and the localized valence band maximum, hindering the progress of complementary devices and circuits. In this work, we propose an inorganic blending strategy to activate the hole-transporting character in an inorganic semiconductor compound, namely tellurium-selenium-oxygen (TeSeO). By rationally combining intrinsic p-type semimetal, semiconductor, and wide-bandgap semiconductor into a single compound, the TeSeO system displays tunable bandgaps ranging from 0.7 to 2.2 eV. Wafer-scale ultrathin TeSeO films, which can be deposited at room temperature, display high hole field-effect mobility of 48.5 cm2/(Vs) and robust hole transport properties, facilitated by Te-Te (Se) portions and O-Te-O portions, respectively. The nanosphere lithography process is employed to create nanopatterned honeycomb TeSeO broadband photodetectors, demonstrating a high responsibility of 603 A/W, an ultrafast response of 5 μs, and superior mechanical flexibility. The p-type TeSeO system is highly adaptable, scalable, and reliable, which can address emerging technological needs that current semiconductor solutions may not fulfill.

Tunable Chemochromism and Elastic Properties in Intercalated MoO3: Au-, Cr-, Fe-, Ge-, Mn-, and Ni-MoO3

Chemical tunability of the elastic constants of α-MoO3, a two-dimensional layered oxide, is demonstrated with mutability on the order of tens of GPa, simply by choice of a metal intercalant including Au, Cr, Fe, Ge, Mn, and Ni. Using Brillouin laser light scattering from confined acoustic phonons in nanometer-thick materials, the in-plane angular dispersion of the quantized acoustic phonon branches of 2D layered, intercalated MoO3 is measured and used to determine the bulk modulus (K), Young's moduli (E11, E22, and E33), each of the nine independent elastic tensor elements (cij), and the thickness. Intercalation of metals generally reduces the anisotropy in MoO3 except in Ge-MoO3, for which the in-plane longitudinal elastic anisotropy is unaffected. Chemochromism from transparent white (MoO3 and Fe-MoO3) to near black (Ni-MoO3) to brilliant dark blue (Ge-MoO3) is demonstrated and is associated with a reduction in electronic band gap with intercalation and an increase in absorption >600 nm for some intercalants (Cr-, Ge-, and Mn-MoO3).

E-beam synthesized fast-switching TiO2/SnO2 type-II heterostructure photodetector

A fast-switching T i O 2/S n O 2 heterostructure thin-film (TF) photodetector synthesized by electron beam evaporation technique is analyzed in this study. The substrate utilized is n-type silicon (Si), while gold (Au) is employed as the top electrode. To assess sample morphology and confirm elemental composition, field emission scanning electron microscopy (FESEM), energy dispersive x-ray spectroscopy (EDS), and chemical mapping were conducted. Structural characteristics were determined using X-ray diffraction (XRD) analysis. The XRD analysis confirmed the presence of various phases of T i O 2 (anatase and rutile) and S n O 2 (rutile). UV-Vis spectroscopy revealed multiple absorption peaks, at 447 nm, 495 nm, 560 nm, and 673 nm, within the visible spectrum. The device demonstrates high detectivity (D ∗) of 1.737×109 Jones and a low noise equivalent power (NEP) of 0.765×10-10 W. Evaluation of the device's switching response through current-time characteristic (I-T) analysis indicates rapid switching with a rise time and fall time of 0.33 s and 0.36 s, respectively.

Polymer-Supported Heterogeneous Fenton Catalysts for the Environmental Remediation of Wastewater

Materials based on polymer hydrogels have demonstrated potential as innovative Fenton catalysts for treating water. However, developing these polymer-supported catalysts with robust stability presents a significant challenge. This paper explores the development and application of polymer-supported heterogeneous Fenton catalysts for the environmental remediation of wastewater, emphasizing the enhancement of metal incorporation into catalysts for improved efficiency. The study begins with an introduction to the heterogeneous Fenton process and its relevance to wastewater treatment. It further delves into the specifics of polymer-supported heterogeneous Fenton catalysts, focusing on iron oxide, copper complexes/nanoparticles, and ruthenium as key components. The synthesis methods employed to prepare these catalysts are discussed, highlighting the innovative approaches to achieve substantial metal incorporation. Operational parameters such as catalyst dosage, pollutant concentration, and the effect of pH on the process efficiency are thoroughly examined. The catalytic performance is evaluated, providing insights into the effectiveness of these catalysts in degrading pollutants. Recent developments in the field are reviewed, showcasing advancements in catalyst design and application. The study also addresses the stability and reusability of polymer-supported heterogeneous Fenton catalysts, critical factors for their practical application in environmental remediation. Environmental applications are explored, demonstrating the potential of these catalysts in addressing various pollutants. The Conclusions offers future perspectives, underlining the ongoing challenges and opportunities in the field, and the importance of further research to enhance the efficacy and sustainability of polymer-supported heterogeneous Fenton catalysts for wastewater treatment.

Growth of Single Crystalline 2D Materials beyond Graphene on Non-metallic Substrates

The advent of 2D materials has ushered in the exploration of their synthesis, characterization and application. While plenty of 2D materials have been synthesized on various metallic substrates, interfacial interaction significantly affects their intrinsic electronic properties. Additionally, the complex transfer process presents further challenges. In this context, experimental efforts are devoted to the direct growth on technologically important semiconductor/insulator substrates. This review aims to uncover the effects of substrate on the growth of 2D materials. The focus is on non-metallic substrate used for epitaxial growth and how this highlights the necessity for phase engineering and advanced characterization at atomic scale. Special attention is paid to monoelemental 2D structures with topological properties. The conclusion is drawn through a discussion of the requirements for integrating 2D materials with current semiconductor-based technology and the unique properties of heterostructures based on 2D materials. Overall, this review describes how 2D materials can be fabricated directly on non-metallic substrates and the exploration of growth mechanism at atomic scale.

Selenium-alloyed tellurium oxide for amorphous p-channel transistors

Compared to polycrystalline semiconductors, amorphous semiconductors offer inherent cost-effective, simple and uniform manufacturing. Traditional amorphous hydrogenated Si falls short in electrical properties, necessitating the exploration of new materials. The creation of high-mobility amorphous n-type metal oxides, such as a-InGaZnO (ref. 1), and their integration into thin-film transistors (TFTs) have propelled advancements in modern large-area electronics and new-generation displays2-8. However, finding comparable p-type counterparts poses notable challenges, impeding the progress of complementary metal-oxide-semiconductor technology and integrated circuits9-11. Here we introduce a pioneering design strategy for amorphous p-type semiconductors, incorporating high-mobility tellurium within an amorphous tellurium suboxide matrix, and demonstrate its use in high-performance, stable p-channel TFTs and complementary circuits. Theoretical analysis unveils a delocalized valence band from tellurium 5p bands with shallow acceptor states, enabling excess hole doping and transport. Selenium alloying suppresses hole concentrations and facilitates the p-orbital connectivity, realizing high-performance p-channel TFTs with an average field-effect hole mobility of around 15 cm2 V-1 s-1 and on/off current ratios of 106-107, along with wafer-scale uniformity and long-term stabilities under bias stress and ambient ageing. This study represents a crucial stride towards establishing commercially viable amorphous p-channel TFT technology and complementary electronics in a low-cost and industry-compatible manner.

Non-Volatile Memory Based on ZnO Thin-Film Transistor with Self-Assembled Au Nanocrystals

Non-volatile memory based on thin-film transistor is crucial for system-on-panel and flexible electronic systems. Achieving high-performance and reliable thin-film transistor (TFT) memory still remains challenging. Here, for the first time, we present a ZnO TFT memory utilizing self-assembled Au nanocrystals with a low thermal budget, exhibiting excellent memory performance, including a program/erase window of 9.8 V, 29% charge loss extrapolated to 10 years, and remarkable endurance characteristics. Moreover, the memory exhibits favorable on-state characteristics with mobility, subthreshold swing, and current on-off ratio of 17.6 cm2V-1s-1, 0.71 V/dec, and 107, respectively. Our study shows that the fabricated TFT memory has great potential for practical applications.

Pushing the thinness limit of silver films for flexible optoelectronic devices via ion-beam thinning-back process

Reducing the silver film to 10 nm theoretically allows higher transparency but in practice leads to degraded transparency and electrical conductivity because the ultrathin film tends to be discontinuous. Herein, we developed a thinning-back process to address this dilemma, in which silver film is first deposited to a larger thickness with high continuity and then thinned back to a reduced thickness with an ultrasmooth surface, both implemented by a flood ion beam. Contributed by the shallow implantation of silver atoms into the substrate during deposition, the thinness of silver films down to 4.5 nm can be obtained, thinner than ever before. The atomic-level surface smooth permits excellent visible transparency, electrical conductivity, and the lowest haze among all existing transparent conductors. Moreover, the ultrathin silver film exhibits the unique robustness of mechanical flexibility. Therefore, the ion-beam thinning-back process presents a promising solution towards the excellent transparent conductor for flexible optoelectronic devices.

Chromone-Based Cd(II) Fluorescent Coordination Polymer Fabricated to Study Optoelectronic and Explosive Sensing Properties

Here, electrical conductivity and explosive sensing properties of multifunctional chromone-Cd(II)-based coordination polymers (CPs) (1-4) have been explored. The presence of different pseudohalide linkers, thiocyanate ions, and dicyanamide ions resulted in 1D and 3D architecture in the CPs. Thin film devices developed from CPs 1-4 (complex-based Schottky devices, CSD1, CSD2, CSD3, and CSD4, respectively) showed semiconductor behavior. Their conductivity values increased under photo illumination (1.37 × 10-5, 1.85 × 10-5, 1.61 × 10-5, and 2.01 × 10-5 S m-1 under dark conditions and 5.06 × 10-5, 8.78 × 10-5, 7.26 × 10-5, and 10.21 × 10-5 S m-1 under light). The nature of the I-V plots of these thin film devices under light irradiation and dark are nonlinear rectifying, which has been observed in Schottky barrier diodes (SBDs). All four CPs (1-4) exhibited highly selective fluorescence quenching-based sensing properties toward well-known explosives, 2,4-dinitrophenol (DNP) and 2,4,6-trinitrophenol (TNP). The limit of detection (LOD) values are 55, 28, 27, and 31 μM for TNP and 78, 44, 32, and 41 μM for DNP for complexes 1-4, respectively. A structure property correlation has been established to explain optoelectronic and explosive sensing properties.

Suppressing Carrier Recombination in BiVO4/PEDOT:PSS Heterojunction for High-Performance Photodetector

The organic-inorganic hybrid heterojunction is introduced for the first time to break through the performance bottleneck of BiVO4-based photodetectors. Through a facile solution process, a p-n heterojunction is established at the BiVO4/PEDOT:PSS interface, and the built-in electric field is designed to separate photogenerated charge carriers. The hybrid heterojunction outputs a significantly increased photocurrent, which is 24 000 times larger than that of the bare BiVO4 thin film. The photodetector shows a satisfactory performance with a responsivity (R) and specific detectivity (D*) of 107.8 mA/W and 4.13 × 1010 Jones at 482 nm illumination. In addition to the fast response speed (100 ms), the device also exhibits an impressive long-term stability with a negligible attenuation in photocurrent after more than 700 cycles. This work provides a novel strategy to suppress carrier recombination of BiVO4, and the coupling of metal oxides and organic semiconductors opens up a new avenue for fabricating high-performance photodetectors.

Photocarrier Recombination Dynamics in Highly Scattering Cu2O Nanocatalyst Clusters

Inversion analysis of transient absorption data to capture the photoexcited charge carrier population rate dynamics is a powerful technique for extracting realistic lifetimes and identifying recombination pathways. However, for highly scattering samples such as Cu2O nanoparticles (NPs) with associated dielectric Mie scattering, the scattering leads to an inaccurate measure of the excited photocarrier. This work studies methods to correct for the scattering to generalize the use of inversion analysis and provide secondary information about the nature of the scattering NPs. Scattering profiles of semitransparent disks containing Cu2O NPs with different shapes and sizes are measured to demonstrate that the inclusion of scattering in analysis reduces the photoexcited carrier density by 1 order of magnitude. It is found that the photocarrier density response is affected by shape rather than size. A Fourier transform of the scattering profiles produces a distribution of length scales within the sample characteristic of the mean separation of scatterers. This analysis reveals that NPs are forming clusters. Links are made between the scattering and carrier dynamics.

Level-Shifted Embedded Cluster Method for Modeling the Chemistry of Metal Oxides

The embedded cluster method has been used extensively in the study of the chemical and physical properties of metal oxides. This method has been a popular tool due to its relatively high accuracy and low computational cost. An even more promising option may entail integrating the embedded cluster method with the combined quantum mechanical and molecular mechanical (QM/MM) approach, thereby enabling further consideration of interactions within the entire system for superior results. We aim to accurately model the chemistry of metal oxides using this combined scheme. Here, using the prototypical MgO(100) surface as a test system, with Mg9O14 as the cluster in the quantum mechanical region, we show that the embedded cluster with untailored boundary effective core potentials (ECPs) can have frontier orbital energy levels that substantially deviate from the quantum mechanical reference results. This occurs even when Mg9O9, which retains the stoichiometry of MgO, is used as the cluster in the quantum mechanical region. As a result, the chemical properties of the embedded cluster models differ from those of the quantum mechanical reference model. To address this issue, we propose a new variant of the embedded cluster method called the level-shifted embedded cluster (LSEC) method, which allows the energy levels to be shifted to match the reference levels by tuning the boundary ECPs. Our validation calculations on the adsorption of various adsorbates with different properties on the MgO(100) surface show that the overall performance of QM/MM with the LSEC method is excellent for the adsorption energies, geometries, and charge properties. The excellent performance holds for both the nonstoichiometric and stoichiometric clusters (i.e., Mg9O14 and Mg9O9, respectively), demonstrating the robustness of the LSEC method. We expect that the LSEC method can be combined with QM/MM or used separately for future chemical studies of metal oxides and other ionically bonded systems.

Structural, dielectric, and antimicrobial evaluation of PMMA/CeO2 for optoelectronic devices

In the current report, we have successfully synthesized nanocomposites of PMMA incorporating different doping of CeO2 through a chemical approach. XRD results reflects decent matching for CeO2 nanoparticles with 29 nm crystallite size. FTIR spectroscopy demonstrates the characteristic functional groups validating the successful formation of the composite. The optical study of PMMA and the nanocomposites has proven that the optical properties such as band gap, refractive index, optical permittivity, and loss tangent factor are affected by adding CeO2 to the PMMA matrix.The peak residing around 420 nm by UV measurements is allocated to occurring electrons photoexcitation from the valence to conduction band inherent in CeO2. The dielectric measurements were achieved using broadband dielectric spectroscopy upon a wide span of frequencies (10-1-107 Hz) and within temperatures from - 10 to 80 °C with a step of 10 °C. The permittivity decreases by adding CeO2 and the dielectric parameters are thermally enhanced, however, the temperature influence is based on CeO2 content, the higher the CeO2 amount, the higher the influence of temperature. The results of the nanocomposites revealed antibacterial activity counter to gram-positive bacteria strain (S. aureus, and B. subtilis), and gram-negative bacteria (E. coli, and K. pneumoniae), yeast (C. albicans, as well as fungi (A. niger). Inherently, the change in CeO2 concentration from 0.01 to 0.1 wt% delivers maximum influence against gram-negative bacteria. These PMMA CeO2-doped composites are beneficial for optoelectronic areas and devices.

c-Axis Aligned 3 nm Thick In2O3 Crystal Using New Liquid DBADMIn Precursor for Highly Scaled FET Beyond the Mobility-Stability Trade-off

Oxide semiconductors (OS) are attractive materials for memory and logic device applications owing to their low off-current, high field effect mobility, and superior large-area uniformity. Recently, successful research has reported the high field-effect mobility (μFE) of crystalline OS channel transistors (above 50 cm2 V-1 s-1). However, the memory and logic device application presents challenges in mobility and stability trade-offs. Here, we propose a method for achieving high-mobility and high-stability by lowering the grain boundary effect. A DBADMIn precursor was synthesized to deposit highly c-axis-aligned C(222) crystalline 3 nm thick In2O3 films. In this study, the 250 °C deposited 3 nm thick In2O3 channel transistor exhibited high μFE of 41.12 cm2 V-1 s-1, Vth of -0.50 V, and SS of 150 mV decade-1 with superior stability of 0.16 V positive shift during PBTS at 100 °C, 3 MV cm-1 stress conditions for 3 h.

Realization of tunable-performance in atomic layer deposited Hf-doped In2O3 thin film transistor via oxygen vacancy modulation

Due to the limitation of inherent ultra-high electron concentration, the electrical properties of In2O3 resemble those of conductors rather than semiconductors prior to special treatment. In this study, the effect of various annealing treatments on the microstructure, optical properties, and oxygen vacancies of the films and transistors is systematically investigated. Our finding reveals a progressive crystallization trend in the films with increasing annealing temperature. In addition, a higher annealing temperature is also associated with the reduction in the concentration of oxygen vacancies, as well as an elevation in both optical transmittance and optical bandgap. Furthermore, with the implementation of annealing process, the devices gradually transform from no pronounced gate control to exhibit with excellent gate control and electrical performances. The atomic layer deposited Hf-doped In2O3 thin film transistor annealed at 250 °C exhibits optimal electrical properties, with a field-effect mobility of 18.65 cm2 V-1 s-1, a subthreshold swing of 0.18 V/dec, and an Ion/Ioff ratio of 2.76 × 106. The results indicate that the impact of varying annealing temperatures can be attributed to the modulation of oxygen vacancies within the films. This work serves as a complementary study for the existing post-treatment of oxide films and provides a reliable reference for utilization of the annealing process in practical applications.

Intense pulsed light annealing of solution-based indium-gallium-zinc-oxide semiconductors with printed Ag source and drain electrodes for bottom gate thin film transistors

In this study, an intense pulsed light (IPL) annealing process for a printed multi-layered indium-gallium-zinc-oxide (IGZO) and silver (Ag) electrode structure was developed for a high performance all-printed inorganic thin film transistor (TFT). Through a solution process using IGZO precursor and Ag ink, the bottom gate structure TFT was fabricated. The spin coating method was used to form the IGZO semiconductor layer on a heavily-doped silicon wafer covered with thermally grown silicon dioxide. The annealing process of the IGZO layer utilized an optimized IPL irradiation process. The Ag inks were printed on the IGZO layer by screen printing to form the source and drain (S/D) pattern. This S/D pattern was dried by near infrared radiation (NIR) and the dried S/D pattern was sintered with intense pulsed light by varying the irradiation energy. The performances of the all-printed TFT such as the field effect mobility and on-off ratio electrical transfer properties were measured by a parameter analyzer. The interfacial analysis including the contact resistance and cross-sectional microstructure analysis is essential because diffusion phenomenon can occur during the annealing and sintering process. Consequently, this TFT device showed noteworthy performance (field effect mobility: 7.96 cm2/V s, on/off ratio: 107). This is similar performance compared to a conventional TFT, which is expected to open a new path in the printed metal oxide-based TFT field.

Crystal structure, optical characterization, conduction and relaxation mechanisms of a new hybrid compound (C6H9N2)2[Sb2Cl8]

Hybrid materials play a crucial role in the construction of flexible electronic devices due to the advantages of both organic and inorganic components. To this end, a new hybrid compound (C6H9N2)2[Sb2Cl8] was successfully fabricated using the slow evaporation solution growth approach at room temperature. In-depth research has been done on the structural, optical, and dielectric characteristics. This compound adopts the triclinic symmetry and crystallizes in the centrosymmetric space group P1̄. The inorganic and organic components respectively form anionic and cationic layers parallel to the ac-plane and alternate along the crystallographic b-axis. The [Sb2Cl8]2- dimeric units are bound to the 2-amino-5-picolinium cations [(C6H9N2)]+ through N-H⋯Cl hydrogen bonds. Optical absorption measurements showed a semiconductor behavior with a band gap of approximately 3.57 eV. In addition, DFT calculations were performed to investigate the absorption spectrum, wavelength, and HOMO-LUMO gap. The analysis of complex impedance spectra shows that the electrical conductivity of the sample is strongly frequency and temperature dependent, indicating a relaxation phenomenon and semiconductor-type behavior. Dielectric data obtained from complex impedance spectroscopy and ac conductivity with the use of the Maxwell-Wagner equivalent circuit model, and the universal power law have been investigated to explore the basic components of the electronic transport and relaxation process in our material.

A review on chitosan/metal oxide nanocomposites for applications in environmental remediation

A cleaner and safer environment is one of the most important requirements in the future. It has become increasingly urgent and important to fabricate novel environmentally-friendly materials to remove various hazardous pollutants. Compared with traditional materials, chitosan is a more environmentally friendly material due to its abundance, biocompatibility, biodegradability, film-forming ability and hydrophilicity. As an abundant of -NH2 and -OH groups on chitosan molecular chain could chelate with all kinds of metal ions efficiently, chitosan-based materials hold great potential as a versatile supporting matrix for metal oxide nanomaterials (MONMs) (TiO2, ZnO, SnO2, Fe3O4, etc.). Recently, many chitosan/metal oxide nanomaterials (CS/MONMs) have been reported as adsorbents, photocatalysts, heterogeneous Fenton-like agents, and sensors for potential and practical applications in environmental remediation and monitoring. This review analyzed and summarized the recent advances in CS/MONMs composites, which will provide plentiful and meaningful information on the preparation and application of CS/MONMs composites for wastewater treatment and help researchers to better understand the potential of CS/MONMs composites for environmental remediation and monitoring. In addition, the challenges of CS/MONM have been proposed.

Metal-Oxide Heterojunction: From Material Process to Neuromorphic Applications

As technologies like the Internet, artificial intelligence, and big data evolve at a rapid pace, computer architecture is transitioning from compute-intensive to memory-intensive. However, traditional von Neumann architectures encounter bottlenecks in addressing modern computational challenges. The emulation of the behaviors of a synapse at the device level by ionic/electronic devices has shown promising potential in future neural-inspired and compact artificial intelligence systems. To address these issues, this review thoroughly investigates the recent progress in metal-oxide heterostructures for neuromorphic applications. These heterostructures not only offer low power consumption and high stability but also possess optimized electrical characteristics via interface engineering. The paper first outlines various synthesis methods for metal oxides and then summarizes the neuromorphic devices using these materials and their heterostructures. More importantly, we review the emerging multifunctional applications, including neuromorphic vision, touch, and pain systems. Finally, we summarize the future prospects of neuromorphic devices with metal-oxide heterostructures and list the current challenges while offering potential solutions. This review provides insights into the design and construction of metal-oxide devices and their applications for neuromorphic systems.

Recent Advances in Laser-Induced Synthesis of MOF Derivatives

Metal-organic frameworks (MOFs) are crystalline materials with permanent pores constructed by the self-assembly of organic ligands and metal clusters through coordination bonds. Due to their diversity and tunability, MOFs are used as precursors to be converted into other types of functional materials by pyrolytic recrystallization. Laser-induced synthesis is proven to be a powerful pyrolytic processing technique with fast and accurate laser irradiation, low loss, high efficiency, selectivity, and programmability, which endow MOF derivatives with new features. Laser-induced MOF derivatives exhibit high versatility in multidisciplinary research fields. In this review, first, the basic principles of laser smelting and the types of materials for laser preparation of MOF derivatives are briefly introduced. Subsequently, it is focused on the peculiarity of the engineering of structural defects and their applications in catalysis, environmental protection, and energy fields. Finally, the challenges and opportunities at the current stage are highlighted with the aim of elucidating the future direction of the rapidly growing field of laser-induced synthesis of MOF derivatives.

Observing the Evolution of Metal Oxides in Liquids

Metal oxides with diverse compositions and structures have garnered considerable interest from researchers in various reactions, which benefits from transmission electron microscopy (TEM) in determining their morphologies, phase, structural and chemical information. Recent breakthroughs have made liquid-phase TEM a promising imaging platform for tracking the dynamic structure, morphology, and composition evolution of metal oxides in solution under work conditions. Herein, this review introduces the recent advances in liquid cells, especially closed liquid cell chips. Subsequently, the recent progress including particle growth, phase transformation, self-assembly, core-shell nanostructure growth, and chemical etching are introduced. With the late technical advances in TEM and liquid cells, liquid-phase TEM is used to characterize many fundamental processes of metal oxides for CO2 reduction and water-splitting reactions. Finally, the outlook and challenges in this research field are discussed. It is believed this compilation inspires and stimulates more efforts in developing and utilizing in situ liquid-phase TEM for metal oxides at the atomic scale for different applications.

Approaching Theoretical Limits in the Performance of Printed P-Type CuI Transistors via Room Temperature Vacancy Engineering

Development of a novel high performing inorganic p-type thin film transistor could pave the way for new transparent electronic devices. This complements the widely commercialized n-type counterparts, indium-gallium-zinc-oxide (IGZO). Of the few potential candidates, copper monoiodide (CuI) stands out. It boasts visible light transparency and high intrinsic hole mobility (>40 cm2 V-1 s-1 ), and is suitable for various low-temperature processes. However, the performance of reported CuI transistors is still below expected mobility, mainly due to the uncontrolled excess charge- and defect-scattering from thermodynamically favored formation of copper and iodine vacancies. Here, a solution-processed CuI transistor with a significantly improved mobility is reported. This enhancement is achieved through a room-temperature vacancy-engineering processing strategy on high-k dielectrics, sodium-embedded alumina. A thorough set of chemical, structural, optical, and electrical analyses elucidates the processing-dependent vacancy-modulation and its corresponding transport mechanism in CuI. This encompasses defect- and phonon-scattering, as well as the delocalization of charges in crystalline domains. As a result, the optimized CuI thin film transistors exhibit exceptionally high hole mobility of 21.6 ± 4.5 cm2 V-1 s-1 . Further, the successful operation of IGZO-CuI complementary logic gates confirms the applicability of the device.

Tuneable-by-design copper oxide nanoparticles in ionic liquid nanofluids

In this study, copper oxide nanoparticles (CuO-NPs) were synthesised in an ionic liquid, [C2MIm][CnHnCO2], and the respective copper(II) carboxylate precursors. Heating the solution to 120 °C caused a colour change from blue to red, indicating a change in copper salt coordination and nanoparticle formation. Crystallography and UV-Vis spectroscopy were used to monitor the transition upon temperature changes. The particle formation was characterised using TEM and SWAXS analyses. The results showed that different anion chain lengths led to different particle sizes. When using copper(II) acetate precursors, the transformation resulted in CuO(I,II) clusters (<1 nm), depending on the imidazolium-based cation used. However, using a copper(II) octanoate precursor, small CuO-NPs in the range of 10-25 nm were formed, while larger CuO-NPs were obtained using a copper(II) butanoate precursor in the range of 10-61 nm.

2D Non-van der Waals Nanoplatelets of Hematene and Magnetene: Nonlinear Optical Response and Optical Limiting Performance from UV to NIR

Recently, the preparation of some hematene and magnetene ultrathin non van der Waals (non-vdW) 2D nanoplatelets was reported starting from hematite and magnetite natural iron ores. The present work reports on the determination and evaluation of the nonlinear optical response and the optical limiting (OL) action of these 2D nanoplatelets dispersed in water under ns laser excitation. The obtained results show that both hematene and magnetene exhibit strong nonlinear absorption and refraction, comparable and even larger than those of other van der Waals (vdW) 2D counterpart materials. In addition, due to their strong nonlinear absorption, both hematene and magnetene show exceptional OL performance from the UV to visible, attaining very low values of optical limiting onset (OLon ), comparable and even lower than that of vdW 2D nanomaterials, such as graphene, graphene oxide, other transition metal dichalcogenides like MoS2 , WS2 and MoSe2 , black phosphorous and antimonene. Moreover, hematene was found to exhibit more efficient OL action than magnetene for all the excitation wavelengths studied, attributed to more efficient ligand to metal charge transfer. The present findings open new possibilities for the potential use of these non-vdW 2D materials in photonics and optoelectronics, e. g., as optical limiters and optical switchers.

From waste carbonated beverages to high performance electrochromic devices: a green and low-cost synthetic method for self-doped metal oxides

Metal oxides with reversible optical modulation capability are in the spotlight for smart windows and other emerging optoelectronic devices. Improving the electrochromic performance at a low cost is the only way to popularize their applications. Herein, we demonstrate a facile and versatile strategy to synthesize high-performance electrochromic metal oxides, in which waste carbonated beverages are used as the raw materials for the first time. It can not only reduce the production cost of electrochromic materials, but also alleviate the environmental pollution caused by such liquid waste. With an ingenious carbonization pre-step, both nanoscale pores and oxygen vacancies are created in an annealed tungsten oxide thin film. Multiscale structure optimization endows the self-doped WO3-x films with excellent electrochromic properties such as large transmittance modulation (81.2%), high coloration efficiency (98.7 cm2 C-1) and good cycling stability. DFT calculations show that oxygen vacancies reduce the Li+ ion insertion energy barrier, which is conducive to the interfacial reaction in coloring and bleaching processes. Moreover, this approach is universal to other oxides such as vanadium pentoxide, molybdenum oxide and nickel oxide. The waste-to-value concept paves the way for cost-effective electrochromic materials and sheds light on the multiscale optimization of superior metal oxides.

Tunable-performance all-oxide structure field-effect transistor based atomic layer deposited Hf-doped In2O3 thin films

The relocation of peripheral transistors from the front-end-of-line (FEOL) to the back-end-of-line (BEOL) in fabrication processes is of significant interest, as it allows for the introduction of novel functionality in the BEOL while providing additional die area in the FEOL. Oxide semiconductor-based transistors serve as attractive candidates for BEOL. Within these categories, In2O3 material is particularly notable; nonetheless, the excessive intrinsic carrier concentration poses a limitation on its broader applicability. Herein, the deposition of Hf-doped In2O3 (IHO) films via atomic layer deposition for the first time demonstrates an effective method for tuning the intrinsic carrier concentration, where the doping concentration plays a critical role in determine the properties of IHO films and all-oxide structure transistors with Au-free process. The all-oxide transistors with In2O3: HfO2 ratio of 10:1 exhibited optimal electrical properties, including high on-current with 249 µA, field-effect mobility of 13.4 cm2 V-1 s-1, and on/off ratio exceeding 106, and also achieved excellent stability under long time positive bias stress and negative bias stress. These findings suggest that this study not only introduces a straightforward and efficient approach to improve the properties of In2O3 material and transistors, but as well paves the way for development of all-oxide transistors and their integration into BEOL technology.

Controlling Electron Delocalization in Vanadium-Based Hybrid Bronzes through Molecular Templation

We show that the conductivity of hybrid vanadium bronzes-mixed-valence organic-inorganic vanadium oxides-can be tuned over six orders of magnitude through judicious choice of molecular component. By systematically varying the steric profile, charge density, and propensity to hydrogen bond across a series of eight diammonium-based molecules, we engender multiple distinct motifs of V-O connectivity within the two-dimensional vanadium oxide layers of a family of bulk crystalline hybrid materials. A combination of single-crystal and powder X-ray diffraction analysis, variable-temperature electrical transport measurements, and a range of spectroscopic methods, including UV/Visible diffuse reflectance, X-ray photoelectron, and electron paramagnetic resonance are employed to probe how vanadium oxide layer topology correlates with electron localization. Specifically, alkylammonium molecules yield hybrids featuring more corrugated layers that contain V-O tetrahedra as well as a higher ratio of corner-sharing to edge-sharing polyhedra and that exhibit highly localized electronic behavior, while alkyl bipyridinium molecules yield more regular layers with polyhedral edge-sharing that show substantially delocalized electronic behavior. This work allows for the development of design principles based on structure-property relationships and brings the charge transport capabilities of hybrid vanadium bronzes to more technologically relevant levels.

Exceptional Microscale Plasticity in Amorphous Aluminum Oxide at Room Temperature

Oxide glasses are an elementary group of materials in modern society, but brittleness limits their wider usability at room temperature. As an exception to the rule, amorphous aluminum oxide (a-Al2 O3 ) is a rare diatomic glassy material exhibiting significant nanoscale plasticity at room temperature. Here, it is shown experimentally that the room temperature plasticity of a-Al2 O3 extends to the microscale and high strain rates using in situ micropillar compression. All tested a-Al2 O3 micropillars deform without fracture at up to 50% strain via a combined mechanism of viscous creep and shear band slip propagation. Large-scale molecular dynamics simulations align with the main experimental observations and verify the plasticity mechanism at the atomic scale. The experimental strain rates reach magnitudes typical for impact loading scenarios, such as hammer forging, with strain rates up to the order of 1 000 s-1 , and the total a-Al2 O3 sample volume exhibiting significant low-temperature plasticity without fracture is expanded by 5 orders of magnitude from previous observations. The discovery is consistent with the theoretical prediction that the plasticity observed in a-Al2 O3 can extend to macroscopic bulk scale and suggests that amorphous oxides show significant potential to be used as light, high-strength, and damage-tolerant engineering materials.

La-doped BaSnO3 for electromagnetic shielding transparent conductors

In this work, we find that La-doped BaSnO3 (BLSO) is shown to be a promising electromagnetic shielding transparent conductor. While films grown on industrially practical optoelectronic MgAl2O4 substrates have higher sheet resistance by three orders of magnitude than in previous reports, we show how to recover the sheet resistance close to the single-crystal level by use of an MgO template layer which enables high quality (001)-oriented BLSO epitaxial film growth on (001) MgAl2O4. There is a positive correlation between crystallinity and conductivity; high crystallinity minimizes scattering of free electrons. By applying this design principle to 5-20% doped films, we find that highly crystalline 5% La-doped BLSO films exhibit low sheet resistance of ~ 8.7 Ω ▯ -1, high visible transmittance of ~ 80%, and high X-band electromagnetic shielding effectiveness of ~ 25.9 dB, thus outperforming transparent conducting oxides films of Sn-doped In2O3 and SrMoO3.

Hybrid bronzes: mixed-valence organic-inorganic metal oxides as a tunable material platform

We demonstrate that mixed-valence layered organic-inorganic metal oxides of the form (L)zHxMO3 (L = neutral ligand; M = Mo, W; z = 0.5, 1; 0 < x < 2), which we call hybrid bronzes, can be readily synthesized through mild solution-state self-assembly reactions to integrate the stability and electronic utility of inorganic metal oxide bronzes with the chemical diversity and functionality of organic molecules. We use single-crystal and powder X-ray diffraction coupled with X-ray, electronic, and vibrational spectroscopies to show that the products of aqueous pre-, mid-, or post-synthetic reduction are mixed-valence versions of highly crystalline layered hybrid oxides. Pillaring, bilayered, or canted bilayered arrangements of molecular arrays relative to inorganic sheets are dictated by judicious choice of organic ligands that can also incorporate chemical, redox, or photoactive handles. Significantly, bond-valence sum analysis and diffuse reflectance spectroscopy indicate relatively delocalized electronic behavior and four-point variable-temperature electrical transport measurements show that hybrid bronzes have comparable conductivity to their all-inorganic parent compounds. This work establishes a solution-processable, inexpensive, air- and water-stable, and non-toxic material family whose electronic bands can be readily tuned and doped, thereby positioning hybrid bronzes to address myriad material challenges.

Highly Effective and Efficient Self-Assembled Multilayer-Based Electrode Passivation for Operationally Stable and Reproducible Electrolyte-Gated Transistor Biosensors

To ensure the operational stability of transistor-based biosensors in aqueous electrolytes during multiple measurements, effective electrode passivation is crucially important for reliable and reproducible device performances. This paper presents a highly effective and efficient electrode passivation method using a facile solution-processed self-assembled multilayer (SAML) with excellent insulation property to achieve operational stability and reproducibility of electrolyte-gated transistor (EGT) biosensors. The SAML is created by the consecutive self-assembly of three different molecular layers of 1,10-decanedithiol, vinyl-polyhedral oligomeric silsesquioxane, and 1-octadecanethiol. This passivation enables EGT to operate stably in phosphate-buffered saline (PBS) during repeated measurements over multiple cycles without short-circuiting. The SAML-passivated EGT biosensor is fabricated with a solution-processed In2O3 thin film as an amorphous oxide semiconductor working both as a semiconducting channel in the transistor and as a functionalizable biological interface for a bioreceptor. The SAML-passivated EGT including In2O3 thin film is demonstrated for the detection of Tau protein as a biomarker of Alzheimer's disease while employing a Tau-specific DNA aptamer as a bioreceptor and a PBS solution with a low ionic strength to diminish the charge-screening (Debye length) effect. The SAML-passivated EGT biosensor functionalized with the Tau-specific DNA aptamer exhibits ultrasensitive, quantitative, and reliable detection of Tau protein from 1 × 10-15 to 1 × 10-10 M, covering a much larger range than clinical needs, via changes in different transistor parameters. Therefore, the SAML-based passivation method can be effectively and efficiently utilized for operationally stable and reproducible transistor-based biosensors. Furthermore, this presented strategy can be extensively adapted for advanced biomedical devices and bioelectronics in aqueous or physiological environments.

Flexible In-Ga-Zn-N-O synaptic transistors for ultralow-power neuromorphic computing and EEG-based brain-computer interfaces

Designing low-power and flexible artificial neural devices with artificial neural networks is a promising avenue for creating brain-computer interfaces (BCIs). Herein, we report the development of flexible In-Ga-Zn-N-O synaptic transistors (FISTs) that can simulate essential and advanced biological neural functions. These FISTs are optimized to achieve ultra-low power consumption under a super-low or even zero channel bias, making them suitable for wearable BCI applications. The effective tunability of synaptic behaviors promotes the realization of associative and non-associative learning, facilitating Covid-19 chest CT edge detection. Importantly, FISTs exhibit high tolerance to long-term exposure under an ambient environment and bending deformation, indicating their suitability for wearable BCI systems. We demonstrate that an array of FISTs can classify vision-evoked EEG signals with up to ∼87.9% and 94.8% recognition accuracy for EMNIST-Digits and MindBigdata, respectively. Thus, FISTs have enormous potential to significantly impact the development of various BCI techniques.

Advances in Solution-Processed OLEDs and their Prospects for Use in Displays

This review outlines problems and progress in development of solution-processed organic light-emitting diodes (SOLEDs) in industry and academia. Solution processing has several advantages such as low consumption of materials, low-cost processing, and large-area manufacturing. However, use of a solution process entails complications, such as the need for solvent resistivity and solution-processable materials, and yields SOLEDs that have limited luminous efficiency, severe roll-off characteristics, and short lifetime compared to OLEDs fabricated using thermal evaporation. These demerits impede production of practical SOLED displays. This review outlines the industrial demands for commercial SOLEDs and the current status of SOLED development in industries and academia, and presents research guidelines for the development of SOLEDs that have high efficiency, long lifetime, and good processability to achieve commercialization.

Probing size-dependent defects in zinc oxide using synchrotron techniques: impact on photocatalytic efficiency

In the present study, synchrotron-based X-ray diffraction (XRD), X-ray absorption spectroscopy (XAS) and X-ray excited optical luminescence (XEOL) have been used to investigate the induced defect states in metal oxide nanomaterials. Specifically, two synthesis approaches have been followed to develop unique nano-sized peanut-shaped (N-ZnO) nanostructures and micron-sized hexagonal rods (M-ZnO). XANES analysis at the Zn K-edge revealed the presence of defect states with a divalent oxidation state of zinc (Zn2+) in a tetrahedral structure. Furthermore, XAS measurements performed at the Zn L3,2-edge and O K-edge confirm higher oxygen-related defects in M-ZnO, while N-ZnO appeared to have a higher concentration of surface defects due to size confinement. Moreover, the in-line XEOL and time dependent-XEOL measurements exposed the radiative excitonic recombination phenomena occurring in the band-tailing region as a function of absorption length, X-ray energy excitation, and time. Based on the chronology developed in the defect state improvement, a possible energy band diagram is proposed to accurately locate the defect states in the two systems. Furthermore, the increased absorption intensity at the Zn L3,2-edge and the O K-edge under the UV lamp suggests delayed recombination of electrons and holes, highlighting their potential use as photo catalysts. The photocatalytic activity degrading the rhodamine B dye established M-ZnO as a superior catalyst with a rapid degradation rate and significant mineralization. Overall, this work provides valuable insights into ZnO defect states and provides a foundation for efficient advanced materials for environmental or other optoelectronic applications.

Manipulation of Charge Dynamics for Efficient and Bright Blue Perovskite Light-Emitting Diodes with Chiral Ligands

Perovskite light-emitting diodes (PeLEDs) emerge as a promising class of optoelectronic devices for next-generation displays and lighting technology. However, the performance of blue PeLEDs lags far behind that of their green and red counterparts, including the unachieved trade-off between high efficiency and high luminance, severe efficiency roll-off, and unsatisfactory power efficiency. Here, a multi-functional chiral ligand of L-phenylalanine methyl ester hydrochloride is strategically introduced into quasi-2D perovskites, which can effectively passivate defects, modulate the phase distribution, improve photoluminescence quantum yield, guarantee high-quality film morphology, and enhance charge transport. Furthermore, ladder-like hole transport layers are established, boosting charge injection and balance. The resultant sky-blue PeLEDs (the photoluminescence peak is 493 nm and the electroluminescence peak is 497 nm) exhibit an external quantum efficiency of 12.43% at 1000 cd m-2 and a record power efficiency of 18.42 lm W-1 , rendering that the performance is among the best blue PeLEDs.

Non-graphitized carbon/Cu2O/Cu0 nanohybrids with improved stability and enhanced photocatalytic H2 production

Cu2O is a highly potent photocatalyst, however photocorrosion stands as a key obstacle for its stability in photocatalytic technologies. Herein, we show that nanohybrids of Cu2O/Cu0 nanoparticles interfaced with non-graphitized carbon (nGC) constitute a novel synthesis route towards stable Cu-photocatalysts with minimized photocorrosion. Using a Flame Spray Pyrolysis (FSP) process that allows synthesis of anoxic-Cu phases, we have developed in one-step a library of Cu2O/Cu0 nanocatalysts interfaced with nGC, optimized for enhanced photocatalytic H2 production from H2O. Co-optimization of the nGC and the Cu2O/Cu0 ratio is shown to be a key strategy for high H2 production, > 4700 μmoles g-1 h-1 plus enhanced stability against photocorrosion, and onset potential of 0.234 V vs. RHE. After 4 repetitive reuses the catalyst is shown to lose less than 5% of its photocatalytic efficiency, while photocorrosion was < 6%. In contrast, interfacing of Cu2O/Cu0 with graphitized-C is not as efficient. Raman, FT-IR and TGA data are analyzed to explain the undelaying structural functional mechanisms where the tight interfacing of nGC with the Cu2O/Cu0 nanophases is the preferred configuration. The present findings can be useful for wider technological goals that demand low-cost engineering, high stability Cu-nanodevices, prepared with industrially scalable process.

Transparent Electronics for Wearable Electronics Application

Recent advancements in wearable electronics offer seamless integration with the human body for extracting various biophysical and biochemical information for real-time health monitoring, clinical diagnostics, and augmented reality. Enormous efforts have been dedicated to imparting stretchability/flexibility and softness to electronic devices through materials science and structural modifications that enable stable and comfortable integration of these devices with the curvilinear and soft human body. However, the optical properties of these devices are still in the early stages of consideration. By incorporating transparency, visual information from interfacing biological systems can be preserved and utilized for comprehensive clinical diagnosis with image analysis techniques. Additionally, transparency provides optical imperceptibility, alleviating reluctance to wear the device on exposed skin. This review discusses the recent advancement of transparent wearable electronics in a comprehensive way that includes materials, processing, devices, and applications. Materials for transparent wearable electronics are discussed regarding their characteristics, synthesis, and engineering strategies for property enhancements. We also examine bridging techniques for stable integration with the soft human body. Building blocks for wearable electronic systems, including sensors, energy devices, actuators, and displays, are discussed with their mechanisms and performances. Lastly, we summarize the potential applications and conclude with the remaining challenges and prospects.

Low-Temperature Enhancement-Mode Amorphous Oxide Thin-Film Transistors in Solution Process Using a Low-Pressure Annealing

The interest in low processing temperature for printable transistors is rapidly increasing with the introduction of a new form factor in electronics and the growing importance of high throughput. This paper reports the fabrication of low-temperature-processable enhancement-mode amorphous oxide thin-film transistors (TFTs) using the solution process. A facile low-pressure annealing (LPA) method is proposed for the activation of indium oxide (InOx) semiconductors at a significantly low processing temperature of 200 °C. Thermal annealing at a pressure of about ~10 Torr induces effective condensation in InOx even at a low temperature. As a result, the fabricated LPA InOx TFTs not only functioned in enhancement mode but also exhibited outstanding switching characteristics with a high on/off current ratio of 4.91 × 109. Furthermore, the LPA InOx TFTs exhibit stable operation under bias stress compared to the control device due to the low concentration of hydroxyl defects.

A Generalized Polymer Precursor Ink Design for 3D Printing of Functional Metal Oxides

Three-dimensional-structured metal oxides have myriad applications for optoelectronic devices. Comparing to conventional lithography-based manufacturing methods which face significant challenges for 3D device architectures, additive manufacturing approaches such as direct ink writing offer convenient, on-demand manufacturing of 3D oxides with high resolutions down to sub-micrometer scales. However, the lack of a universal ink design strategy greatly limits the choices of printable oxides. Here, a universal, facile synthetic strategy is developed for direct ink writable polymer precursor inks based on metal-polymer coordination effect. Specifically, polyethyleneimine functionalized by ethylenediaminetetraacetic acid is employed as the polymer matrix for adsorbing targeted metal ions. Next, glucose is introduced as a crosslinker for endowing the polymer precursor inks with a thermosetting property required for 3D printing via the Maillard reaction. For demonstrations, binary (i.e., ZnO, CuO, In2O3, Ga2O3, TiO2, and Y2O3) and ternary metal oxides (i.e., BaTiO3 and SrTiO3) are printed into 3D architectures with sub-micrometer resolution by extruding the inks through ultrafine nozzles. Upon thermal crosslinking and pyrolysis, the 3D microarchitectures with woodpile geometries exhibit strong light-matter coupling in the mid-infrared region. The design strategy for printable inks opens a new pathway toward 3D-printed optoelectronic devices based on functional oxides.

Characterization of Tunneled Wide Band Gap Mixed Conductors: The Na2O-Ga2O3-TiO2 System

This article focuses on the Na₂O-Ga₂O₃-TiO₂ system, which is barely explored in the study of transparent conductive oxides (TCOs). Na_xGa_4+xTi_n-4-xO_2n-2 (n = 5, 6, and 7 and x ≈ 0.7-0.8) materials were characterized using neutron powder diffraction and aberration-corrected scanning transmission electron microscopy. Activation energy, as a function of different structures depending on tunnel size, shows a significant improvement in Na⁺ ion conduction from hexagonal to octagonal tunnels. New insights into the relationship between the crystal structure and the transport properties of TCOs, which are crucial for the design and development of new optoelectronic devices, are provided.

Bifunctional electrode of bismuth tungsten for electrochemical sensing applications

A co-precipitation technique has been used to prepare Bismuth tungstate nanoparticles (Bi₂WO₆) for electrochemical capacitors and electrochemical sensing of Ascorbic acid (AA). Using a scanning rate of 10 mV s ^-1, the electrode was performed as the pseudocapacitance behavior and the specific capacitance to be up to 677 Fg ^-1 at 1 A/g. Bi₂WO₆ versus Glassy carbon electrode (GCE) was also used to study the behavior of the Bi₂WO₆ modified electrodes in detecting ascorbic acid. This electrochemical sensor shows excellent electrocatalytic performance when ascorbic acid is present, as determined by differential pulse voltammetry. In solution, ascorbic acid diffuses to an electrode surface and controls its surface properties. Based on the results from the investigation, the sensor showed a detection sensitivity of 0.26 mM/mA, and a limit of detection (LOD) of 77.85 mM. It is clear from these results that Bi₂WO₆ may find application as an electrode material for supercapacitors and glucose sensors.