Switching of a coupled spin pair in a single-molecule junction

Conductance and assembly of quasi-1D coordination chain molecular junctions with triazole derivatives

Incorporating transition metal atoms into metal-molecule-metal junctions presents opportunities for exploring the electronic properties of coordination complexes, organometallics and metal-organic materials on the single molecule level. Recent single molecule conductance studies have shown that in situ incorporation of electrode metal atoms into coordination chains formed in the junction can occur with deprotonated, negatively charged organic ligands, such as the imidazolate (Im-) anion. However, the mechanism and chemical principles, such as the role of the charge state of the ligand, for the construction of such coordination chains are still debated. Here, we probe the role of the ligand charge state and electronic structure in single-molecule conductance and formation of metal-molecule coordination chains. We perform break junction measurements with triazole isomers, which can bridge junctions both in their neutral and charged forms, and find that prior deprotonation of the ligands is not required for coordination complex assembly, but can affect the molecular conductance and junction formation probability. Our results indicate that coordination chains can form with neutral ligands, as long as the electron density in the frontier MOs is concentrated at the binding sites and along the direction of pulling, promoting ligand binding and incorporation of gold atoms into the junction during elongation. Our findings may provide insight into design principles for in situ assembled molecular wires with transition metal atoms and open the door to electronic and spintronic studies of such materials.

Toward Practical Single-Molecule/Atom Switches

Electronic switches have been considered to be one of the most important components of contemporary electronic circuits for processing and storing digital information. Fabricating functional devices with building blocks of atomic/molecular switches can greatly promote the minimization of the devices and meet the requirement of high integration. This review highlights key developments in the fabrication and application of molecular switching devices. This overview offers valuable insights into the switching mechanisms under various stimuli, emphasizing structural and energy state changes in the core molecules. Beyond the molecular switches, typical individual metal atomic switches are further introduced. A critical discussion of the main challenges for realizing and developing practical molecular/atomic switches is provided. These analyses and summaries will contribute to a comprehensive understanding of the switch mechanisms, providing guidance for the rational design of functional nanoswitch devices toward practical applications.

Fano resonance in molecular junctions of spin crossover complexes

In this paper, we introduce a novel molecular switch paradigm that integrates spin crossover complexes with the Fano resonance effect. Specifically, by performing density-functional theory calculations, the feasibility of achieving Fano resonance using spin crossover complexes is demonstrated in our designed molecular junctions using the complex {Fe[H2B(pz)2]2[Bp(bipy)]} [pz = 1-pyrazolyl, Bp(bipy) = bis(phenylethynyl)(2,2'-bipyridine)]. It is further revealed that the Fano resonance, particularly the Fano dip, is most prominent in the junction with cobalt tips among all the schemes, together with the spin-filtering effect. Most importantly, this junction of cobalt tips is able to exhibit three distinct conductance states, which are controlled by the modulation of Fano resonance due to the spin-state transition of the complex and the applied gate voltage. Such a molecular switch paradigm holds potential for applications in logic gates, memory units, sensors, thermoelectrics, and beyond.

Voltage-induced modulation of the magnetic exchange in binuclear Fe(III) complex deposited on Au(111) surface

We present a complete computational study devoted to the deposition of a magnetic binuclear complex on a metallic surface, aimed to obtain insight into the interaction of magnetically coupled complexes with their supporting substrates, as well as their response to external electrical stimuli applied through a surface-molecule-STM molecular junction-like architecture. Our results not only show that the deposition is favorable in two of the four studied orientations, but also, that the magnetic coupling is only slightly perturbed once the complex is adsorbed. We observe that the effects of the applied bias voltage on the magnetic coupling strongly depend on the molecule orientation with respect to the surface and the voltage polarity. Further analysis shows that this behavior is attributable to the stabilization/destabilization of the d-type singly occupied orbitals of the iron centers, reinforced by the strong local electric fields and induced charge densities only present in certain orientations of the deposited molecule and applied voltage polarity.

Ballistic Conductance through Porphyrin Nanoribbons

The search for long molecular wires that can transport charge with maximum efficiency over many nanometers has driven molecular electronics since its inception. Single-molecule conductance normally decays with length and is typically far below the theoretical limit of G0 (77.5 μS). Here, we measure the conductances of a family of edge-fused porphyrin ribbons (lengths 1-7 nm) that display remarkable behavior. The low-bias conductance is high across the whole series. Charging the molecules in situ results in a dramatic realignment of the frontier orbitals, increasing the conductance to 1 G0 (corresponding to a current of 20 μA). This behavior is most pronounced in the longer molecules due to their smaller HOMO-LUMO gaps. The conductance-voltage traces frequently exhibit peaks at zero bias, showing that a molecular energy level is in resonance with the Fermi level. This work lays the foundations for long, perfectly transmissive, molecular wires with technological potential.

Enhancing Spin-Transport Characteristics, Spin-Filtering Efficiency, and Negative Differential Resistance in Exchange-Coupled Dinuclear Co(II) Complexes for Molecular Spintronics Applications

Single-molecule spintronics, where electron transport occurs via a paramagnetic molecule, has gained wide attention due to its potential applications in the area of memory devices to switches. While numerous organic and some inorganic complexes have been employed over the years, there are only a few attempts to employ exchange coupled dinuclear complexes at the interface, and the advantage of fabricating such a molecular spintronics device in the observation of switchable Kondo resonance was demonstrated recently in the dinuclear [Co2(L)(hfac)4] (1) complex (Wagner et al., Nat. Nanotechnol. 2013, 8, 575-579). In this work, employing an array of theoretical tools such as density functional theory (DFT), the ab initio CASSCF/NEVPT2 method, and DFT combined with nonequilibrium Green Function (NEGF) formalism, we studied in detail the role of magnetic coupling, ligand field, and magnetic anisotropy in the transport characteristics of complex 1. Particularly, our calculations not only reproduce the current-voltage (I-V) characteristics observed in experiments but also unequivocally establish that these arise from an exchange-coupled singlet state that arises due to antiferromagnetic coupling between two high-spin Co(II) centers. Further, the estimated spin Hamiltonian parameters such as J, g values, and D and E/D values are only marginally altered for the molecule at the interface. Further, the exchange-coupled state was found to have very similar transport responses, despite possessing significantly different geometries. Our transport calculations unveil a new feature of the negative differential resistance (NDR) effect on 1 at the bias voltage of 0.9 V, which agrees with the experimental I-V characteristics reported. The spin-filtering efficiency (SFE) computed for the spin-coupled states was found to be only marginal (∼25%); however, if the ligand field is fine-tuned to obtain a low-spin Co(II) center, a substantial SFE of 44% was noted. This spin-coupled state also yields a very strong NDR with a peak-to-valley ratio (PVR) of ∼56 - a record number that has not been witnessed so far in this class of compounds. Additionally, we have established further magnetostructural-transport correlations, providing valuable insights into how microscopic spin Hamiltonian parameters can be associated with SFE. Several design clues to improve the spin-transport characteristics, SFE and NDR in this class of molecule, are offered.

Dynamical Screening of Local Spin Moments at Metal-Molecule Interfaces

Transition-metal phthalocyanine molecules have attracted considerable interest in the context of spintronics device development due to their amenability to diverse bonding regimes and their intrinsic magnetism. The latter is highly influenced by the quantum fluctuations that arise at the inevitable metal-molecule interface in a device architecture. In this study, we have systematically investigated the dynamical screening effects in phthalocyanine molecules hosting a series of transition-metal ions (Ti, V, Cr, Mn, Fe, Co, and Ni) in contact with the Cu(111) surface. Using comprehensive density functional theory plus Anderson's Impurity Model calculations, we show that the orbital-dependent hybridization and electron correlation together result in strong charge and spin fluctuations. While the instantaneous spin moments of the transition-metal ions are near atomic-like, we find that screening gives rise to considerable lowering or even quenching of these. Our results highlight the importance of quantum fluctuations in metal-contacted molecular devices, which may influence the results obtained from theoretical or experimental probes, depending on their possibly material-dependent characteristic sampling time-scales.

Computational demonstration of isomer- and spin-state-dependent charge transport in molecular junctions composed of charge-neutral iron(II) spin-crossover complexes

Chemistry offers a multitude of opportunities towards harnessing functional molecular materials with application propensity. One emerging area of interest is molecular spintronics, in which charge and spin degrees of freedom have been used to achieve power-efficient device architectures. Herein, we show that, with the aid of state-of-the-art quantum chemical calculations on designer molecular junctions, the conductance and spin filtering capabilities are molecular structure-dependent. As inferred from the calculations, structural control over the transport can be achieved by changing the position of the thiomethyl (SMe) anchoring groups for Au(111) electrodes in a set of isomeric 2,2'-bipyridine-based metal coordinating ligand entities L1 and L2. The computational studies on heteroleptic iron(II) coordination complexes (1 and 2) composed of L1 and L2 reveal that switching the spin-state of the iron(II) centers, from the low-spin (LS) to high-spin (HS) state, by means of an external electric field stimulus, could, in theory, be performed. Such switching, known as spin-crossover (SCO), renders charge transport through single-molecule junctions of 1 and 2 spin-state-dependent, and the HS junctions are more conductive than the LS junctions for both complexes. Additionally, the LS and HS junctions based on complex 1 are more conductive than those featuring complex 2. Moreover, it is predicted that the spin filtering efficiency (SFE) of the HS junctions strongly depends on the bridging complex geometry, with 1 showing a voltage-dependent SFE, whereas 2 exhibits an SFE of practically 100% over all the studied voltage range. To be pragmatic towards applications, the ligands L1 and L2 and complex 1 have been successfully synthesized, and the spin-state switching propensity of 1 in the bulk state has been elucidated. The results shown in this study might lead to the synthesis and characterization of isomeric SCO complexes with tuneable spin-state switching and charge transport properties.

Single-molecule nano-optoelectronics: insights from physics

Single-molecule optoelectronic devices promise a potential solution for miniaturization and functionalization of silicon-based microelectronic circuits in the future. For decades of its fast development, this field has made significant progress in the synthesis of optoelectronic materials, the fabrication of single-molecule devices and the realization of optoelectronic functions. On the other hand, single-molecule optoelectronic devices offer a reliable platform to investigate the intrinsic physical phenomena and regulation rules of matters at the single-molecule level. To further realize and regulate the optoelectronic functions toward practical applications, it is necessary to clarify the intrinsic physical mechanisms of single-molecule optoelectronic nanodevices. Here, we provide a timely review to survey the physical phenomena and laws involved in single-molecule optoelectronic materials and devices, including charge effects, spin effects, exciton effects, vibronic effects, structural and orbital effects. In particular, we will systematically summarize the basics of molecular optoelectronic materials, and the physical effects and manipulations of single-molecule optoelectronic nanodevices. In addition, fundamentals of single-molecule electronics, which are basic of single-molecule optoelectronics, can also be found in this review. At last, we tend to focus the discussion on the opportunities and challenges arising in the field of single-molecule optoelectronics, and propose further potential breakthroughs.

Spin-Crossover in Supramolecular Iron(II)-2,6-bis(1H-Pyrazol-1-yl)pyridine Complexes: Toward Spin-State Switchable Single-Molecule Junctions

Spin-crossover (SCO) active iron(II) complexes are an integral class of switchable and bistable molecular materials. Spin-state switching properties of the SCO complexes have been studied in the bulk and single-molecule levels to progress toward fabricating molecule-based switching and memory elements. Supramolecular SCO complexes featuring anchoring groups for metallic electrodes, for example, gold (Au), are ideal candidates to study spin-state switching at the single-molecule level. In this study, we report on the spin-state switching characteristics of supramolecular iron(II) complexes 1 and 2 composed of functional 4-([2,2'-bithiophen]-5-ylethynyl)-2,6-di(1H-pyrazol-1-yl)pyridine (L1) and 4-(2-(5-(5-hexylthiophen-2-yl)thiophen-2-yl)ethynyl)-2,6-di(1H-pyrazol-1-yl)pyridine (L2) ligands, respectively. Density functional theory (DFT) studies revealed stretching-induced spin-state switching in a molecular junction composed of complex 1, taken as a representative example, and gold electrodes. Single-molecule conductance traces revealed the unfavorable orientation of the complexes in the junctions to demonstrate the spin-state dependence of the conductance.

Construction and physical properties of low-dimensional structures for nanoscale electronic devices

Over the past decades, construction of nanoscale electronic devices with novel functionalities based on low-dimensional structures, such as single molecules and two-dimensional (2D) materials, has been rapidly developed. To investigate their intrinsic properties for versatile functionalities of nanoscale electronic devices, it is crucial to precisely control the structures and understand the physical properties of low-dimensional structures at the single atomic level. In this review, we provide a comprehensive overview of the construction of nanoelectronic devices based on single molecules and 2D materials and the investigation of their physical properties. For single molecules, we focus on the construction of single-molecule devices, such as molecular motors and molecular switches, by precisely controlling their self-assembled structures on metal substrates and charge transport properties. For 2D materials, we emphasize their spin-related electrical transport properties for spintronic device applications and the role that interfaces among 2D semiconductors, contact electrodes, and dielectric substrates play in the electrical performance of electronic, optoelectronic, and memory devices. Finally, we discuss the future research direction in this field, where we can expect a scientific breakthrough.

Single-Molecule Junction: A Reliable Platform for Monitoring Molecular Physical and Chemical Processes

Monitoring and manipulating the physical and chemical behavior of single molecules is an important development direction of molecular electronics that aids in understanding the molecular world at the single-molecule level. The electrical detection platform based on single-molecule junctions can monitor physical and chemical processes at the single-molecule level with a high temporal resolution, stability, and signal-to-noise ratio. Recently, the combination of single-molecule junctions with different multimodal control systems has been widely used to explore significant physical and chemical phenomena because of its powerful monitoring and control capabilities. In this review, we focus on the applications of single-molecule junctions in monitoring molecular physical and chemical processes. The methods developed for characterizing single-molecule charge transfer and spin characteristics as well as revealing the corresponding intrinsic mechanisms are introduced. Dynamic detection and regulation of single-molecule conformational isomerization, intermolecular interactions, and chemical reactions are also discussed in detail. In addition to these dynamic investigations, this review discusses the open challenges of single-molecule detection in the fields of physics and chemistry and proposes some potential applications in this field.

Controlled Hysteresis of Conductance in Molecular Tunneling Junctions

The problem this paper addresses is the origin of the hysteretic behavior in two-terminal molecular junctions made from an EGaIn electrode and self-assembled monolayers of alkanethiolates terminated in chelates (transition metal dichlorides complexed with 2,2'-bipyridine; BIPY-MCl₂). The hysteresis of conductance displayed by these BIPY-MCl₂ junctions changes in magnitude depending on the identity of the metal ion (M) and the window of the applied voltage across the junction. The hysteretic behavior of conductance in these junctions appears only in an incoherent (Fowler-Nordheim) tunneling regime. When the complexed metal ion is Mn(II), Fe(II), Co(II), or Ni(II), both incoherent tunneling and hysteresis are observed for a voltage range between +1.0 V and -1.0 V. When the metal ion is Cr(II) or Cu(II), however, only resonant (one-step) tunneling is observed, and the junctions exhibit no hysteresis and do not enter the incoherent tunneling regime. Using this correlation, the conductance characteristics of BIPY-MCl₂ junctions can be controlled. This voltage-induced change of conductance demonstrates a simple, fast, and reversible way (i.e., by changing the applied voltage) to modulate conductance in molecular tunneling junctions.

Room-Temperature Spin-Dependent Transport in Metalloporphyrin-Based Supramolecular Wires

Here we present room‐temperature spin‐dependent charge transport measurements in single‐molecule junctions made of metalloporphyrin‐based supramolecular assemblies. They display large conductance switching for magnetoresistance in a single‐molecule junction. The magnetoresistance depends acutely on the probed electron pathway through the supramolecular wire: those involving the metal center showed marked magnetoresistance effects as opposed to those exclusively involving the porphyrin ring which present nearly complete absence of spin‐dependent charge transport. The molecular junction magnetoresistance is highly anisotropic, being observable when the magnetization of the ferromagnetic junction electrode is oriented along the main molecular junction axis, and almost suppressed when it is perpendicular. The key ingredients for the above effect to manifest are the electronic structure of the paramagnetic metalloporphyrin, and the spinterface created at the molecule–electrode contact.

A review of oligo(arylene ethynylene) derivatives in molecular junctions

Oligo(arylene ethynylene) (OAE) derivatives are the "workhorse" molecules of molecular electronics. Their ease of synthesis and flexibility of functionalisation mean that a diverse array of OAE molecular wires have been designed, synthesised and studied theoretically and experimentally in molecular junctions using both single-molecule and ensemble methods. This review summarises the breadth of molecular designs that have been investigated with emphasis on structure-property relationships with respect to the electronic conductance of OAEs. The factors considered include molecular length, connectivity, conjugation, (anti)aromaticity, heteroatom effects and quantum interference (QI). Growing interest in the thermoelectric properties of OAE derivatives, which are expected to be at the forefront of research into organic thermoelectric devices, is also explored.

Sublimable Spin-Crossover Complexes: From Spin-State Switching to Molecular Devices

Spin-crossover (SCO) active transition metal complexes are an important class of switchable molecular materials due to their bistable spin-state switching characteristics at or around room temperature. Vacuum-sublimable SCO complexes are a subclass of SCO complexes suitable for fabricating ultraclean spin-switchable films desirable for applications, especially in molecular electronics/spintronics. Consequently, on-surface SCO of thin-films of sublimable SCO complexes have been studied employing spectroscopy and microscopy techniques, and results of fundamental and technological importance have been obtained. This Review provides complete coverage of advances made in the field of vacuum-sublimable SCO complexes: progress made in the design and synthesis of sublimable functional SCO complexes, on-surface SCO of molecular and multilayer thick films, and various molecular and thin-film device architectures based on the sublimable SCO complexes.

Experimental Validation of Quantum Circuit Rules in Molecular Junctions

A series of diarylacetylene (tolane) derivatives functionalised at the 4- and 4′-positions by thiolate, thioether, or amine groups capable of serving as anchor groups to secure the molecules within a molecular junction have been prepared and characterised. The series of compounds have a general form X-B-X, Y-B-Y, and X-B-Y where X and Y represent anchor groups and B the molecular bridge. The single-molecule conductance values determined by the scanning tunnelling microscope break-junction method are found to be in excellent agreement with the predictions made on the basis of a recently proposed ‘molecular circuit law’, which states ‘the conductance of an asymmetric molecule X-B-Y is the geometric mean of the conductance of the two symmetric molecules derived from it, and .’ The experimental verification of the circuit law, which holds for systems in which the constituent moieties X, B, and Y are weakly coupled and whose conductance takes place via off-resonance tunnelling, gives further confidence in the use of this relationship in the design of future compounds for use in molecular electronics research.

Electric field-induced switching among multiple conductance pathways in single-molecule junctions

Here, we report the switching among multiple conductance pathways achieved by sliding the scanning tunneling microscope tip among different binding sites under different electric fields. With an increase in the electric field, high molecular conductance states appear, suggesting the formation of different configurations in single-molecule junctions. The switch can be operated in situ and reversibly, which is also confirmed by the apparent conductance conversion in I-V measurements. Theoretical simulations also agree well with the experimental results, which implies that the electric field enables the possibility to trigger switching in single-molecule junctions.

A Gd@C82 single-molecule electret

Electrets are dielectric materials that have a quasi-permanent dipole polarization. A single-molecule electret is a long-sought-after nanoscale component because it can lead to miniaturized non-volatile memory storage devices. The signature of a single-molecule electret is the switching between two electric dipole states by an external electric field. The existence of these electrets has remained controversial because of the poor electric dipole stability in single molecules. Here we report the observation of a gate-controlled switching between two electronic states in Gd@C₈₂. The encapsulated Gd atom forms a charged centre that sets up two single-electron transport channels. A gate voltage of ±11 V (corresponding to a coercive field of ~50 mV Å^-1) switches the system between the two transport channels with a ferroelectricity-like hysteresis loop. Using density functional theory, we assign the two states to two different permanent electrical dipole orientations generated from the Gd atom being trapped at two different sites inside the C₈₂ cage. The two dipole states are separated by a transition energy barrier of 11 meV. The conductance switching is then attributed to the electric-field-driven reorientation of the individual dipole, as the coercive field provides the necessary energy to overcome the transition barrier.

A non-oxidizing fabrication method for lithographic break junctions of sensitive metals

Electrochemically active metals offer advanced functionalities with respect to the well-established gold electrode arrangements in various electronic transport experiments on atomic scale objects. Such functionalities can arise from stronger interactions with the leads which provide better coupling to specific molecules and may also facilitate metallic filament formation in atomic switches. However, the higher reactivity of the electrode metal also imposes challenges in the fabrication and reliability of nanometer scale platforms, limiting the number of reported applications. Here we present a high-yield lithographic fabrication procedure suitable to extend the experimental toolkit with mechanically controllable break junctions of oxygen sensitive metallic electrodes. We fabricate and characterize silver break junctions exhibiting single-atomic conductance and superior mechanical and electrical stability at room temperature. As a proof-of-principle application, we demonstrate resistive switching between metastable few-atom configurations at finite voltage bias.

Spin-State Ordering in Metal-Based Compounds Using the Localized Active Space Self-Consistent Field Method

Quantitatively accurate calculations for spin-state ordering in transition-metal complexes typically demand a robust multiconfigurational treatment. The poor scaling of such methods with increasing size makes them impractical for large, strongly correlated systems. Density matrix embedding theory (DMET) is a fragmentation approach that can be used to specifically address this challenge. The single-determinantal bath framework of DMET is applicable in many situations, but it has been shown to perform poorly for molecules characterized by strong correlation when a multiconfigurational self-consistent field solver is used. To ameliorate this problem, the localized active space self-consistent field (LASSCF) method was recently described. In this work, LASSCF is applied to predict spin-state energetics in mono- and di-iron systems, and we show that the model offers an accuracy equivalent to that of CASSCF but at a substantially lower computational cost. Performance as a function of basis set and active space is also examined.

Exchange-dependent spin polarized transport and phase transition in a triple monomer molecule

Molecular junctions contribute significantly to the fundamental understanding of the quantum information technologies in molecular spintronics. In this paper, with the aid of the state of the art numerical renormalization group method, we find a triple monomer molecule structure with strong electron-electron interactions could be a potential candidate for a multifunctional spin polarizer when an external magnetic field along the z axis is applied. It is demonstrated that the polarizing scenarios depend closely on the inter-orbital exchange couplings, and results in several kinds of spin polarizers, e.g., the unidirectional, the bidirectional, the dual, and the ternary spin polarizers. We show in detail the related phase diagram, and conclude the Zeeman effect and the charge switching for the bonding, anti-bonding and non-bonding orbitals are responsible for the spin polarizing transport. We stress even when the energy levels are chosen beyond the Kondo regime, the structure still shows a promising platform for molecular spintronics components.

Auxiliary Master Equation for Nonequilibrium Dual-Fermion Approach

We introduce an auxiliary quantum master equation dual fermion method and argue that it presents a convenient way to describe steady states of correlated impurity models. The scheme yields an expansion around a reference that is much closer to the true nonequilibrium state than that in the original dual fermion formulation. In steady-state situations, the scheme is numerically inexpensive and avoids time propagation. The Anderson impurity model is used to test the approach against numerically exact benchmarks.

Spin-Transport Tuning of Individual Magnetic Mn-Salophen Molecule via Chemical Adsorption

Control over spin states at the single molecule level is a key issue in the emerging field of molecular spintronics. Here, we explore the chemical adsorption effect on the magnetic and spin-transport properties of individual magnetic molecule by performing extensive density functional theory calculations in combining with non-equilibrium Green's function method. Theoretical results clearly reveal that the molecular magnetic moment of Mn-salophen can be effectively tuned by adsorbing F and CO on the central Mn cation, while the adsorbed NO molecule quenches the molecular magnetic moment. Without chemical adsorption, the currents through Mn-salophen molecular junction just show a little distinction for two spin channels, which agrees well with previous investigation. Remarkably, the conductive channel can be switched from the spin-up electrons to the spin-down electrons via adsorbing F and CO, respectively, and the corresponding two Mn-salophen molecular junctions with chemical modifications display nearly perfect spin-filtering effect. The observed spin switch and the predicted spin-filtering effect via chemical adsorption indicates that Mn-salophen holds potential applications in molecular spintronic devices.

Molecular Orbital Gating Surface-Enhanced Raman Scattering

One of the promising approaches to meet the urgent demand for further device miniaturization is to create functional devices using single molecules. Although various single-molecule electronic devices have been demonstrated recently, single-molecule optical devices which use external stimulations to control the optical response of a single molecule have rarely been reported. Here, we propose and demonstrate a field-effect Raman scattering (FERS) device with a single molecule, an optical counterpart to field-effect transistors (a key component of modern electronics). With our devices, the gap size between electrodes can be precisely adjusted at subangstrom accuracy to form single molecular junctions as well as to reach the maximum performance of Raman scattering via plasmonic enhancement. Based on this maximum performance, we demonstrated that the intensity of Raman scattering can be further enhanced by an additional ∼40% if the orbitals of the molecules bridged two electrodes were shifted by a gating voltage. This finding not only provides a method to increase the sensitivity of Raman scattering beyond the limit of plasmonic enhancement, but also makes it feasible to realize addressable functional FERS devices with a gate electrode array.

Electric-field induced bistability in single-molecule conductance measurements for boron coordinated curcuminoid compounds

We have studied the single-molecule conductance of a family of curcuminoid molecules (CCMs) using the mechanically controlled break junction (MCBJ) technique. The CCMs under study contain methylthio (MeS-) as anchoring groups: MeS-CCM (1), the free-ligand organic molecule, and two coordination compounds, MeS-CCM-BF2 (2) and MeS-CCM-Cu (3), where ligand 1 coordinates to a boron center (BF2 group) and to a CuII moiety, respectively. We found that the three molecules present stable molecular junctions allowing detailed statistical analysis of their electronic properties. Compound 3 shows a slight increase in the conductance with respect to free ligand 1, whereas incorporation of BF2 (compound 2) promotes the presence of two conductance states in the measurements. Additional experiments with control molecules point out that this bistability is related to the combination of MeS- anchoring groups and the BF2 moiety within the structure of the molecules. Theoretical calculations show that this can be explained by the presence of two conformers once compound 2 is anchored between the gold electrodes. An energy minimum is found for a flat structure but there is a dramatic change in the magnitude and orientation of dipole moment (favouring a non-flat conformer in the presence of an external electric field) due to a conformational change of one of the terminal MeS- groups. The results thus point to an intricate interplay between the applied bias voltage and the molecule dipole moment which could be the basis for designing new molecules aiming at controlling their conformation in devices.

Magnetic properties of transition metal dimers probed by inelastic neutron scattering

The physical characterisation and understanding of molecular magnetic materials is one of the most important steps towards the integration of such systems in hybrid spintronic devices. Amongst the many characterisation techniques employed in such a task, Inelastic Neutron Scattering (INS) stands as one of the most powerful and sensitive tools to investigate their spin dynamics. Herein, the magnetic properties and spin dynamics of two dinuclear complexes, namely [(M(hfacac)2)2(bpym)] (where M = Ni2+, Co2+, abbreviated in the following as Ni2, Co2) are reported. These are model systems that could constitute fundamental units of future spintronic devices. By exploiting the highly sensitive IN5 Cold INS spectrometer, we are able to gain a deep insight into the spin dynamics of Ni2 and to fully obtain the microscopic spin Hamiltonian parameters; while for Co2, a multitude of INS transitions are observed demonstrating the complexity of the magnetic properties of octahedral cobalt-based systems.

Shaping the Atomic-Scale Geometries of Electrodes to Control Optical and Electrical Performance of Molecular Devices

A straightforward method to generate both atomic-scale sharp and atomic-scale planar electrodes is reported. The atomic-scale sharp electrodes are generated by precisely stretching a suspended nanowire, while the atomic-scale planar electrodes are obtained via mechanically controllable interelectrodes compression followed by a thermal-driven atom migration process. Notably, the gap size between the electrodes can be precisely controlled at subangstrom accuracy with this method. These two types of electrodes are subsequently employed to investigate the properties of single molecular junctions. It is found, for the first time, that the conductance of the amine-linked molecular junctions can be enhanced ≈50% as the atomic-scale sharp electrodes are used. However, the atomic-scale planar electrodes show great advantages to enhance the sensitivity of Raman scattering upon the variation of nanogap size. The underlying mechanisms for these two interesting observations are clarified with the help of density functional theory calculation and finite-element method simulation. These findings not only provide a strategy to control the electron transport through the molecule junction, but also pave a way to modulate the optical response as well as to improve the stability of single molecular devices via the rational design of electrodes geometries.

Molecular spin qudits for quantum algorithms

Presently, one of the most ambitious technological goals is the development of devices working under the laws of quantum mechanics. One prominent target is the quantum computer, which would allow the processing of information at quantum level for purposes not achievable with even the most powerful computer resources. The large-scale implementation of quantum information would be a game changer for current technology, because it would allow unprecedented parallelised computation and secure encryption based on the principles of quantum superposition and entanglement. Currently, there are several physical platforms racing to achieve the level of performance required for the quantum hardware to step into the realm of practical quantum information applications. Several materials have been proposed to fulfil this task, ranging from quantum dots, Bose-Einstein condensates, spin impurities, superconducting circuits, molecules, amongst others. Magnetic molecules are among the list of promising building blocks, due to (i) their intrinsic monodispersity, (ii) discrete energy levels (iii) the possibility of chemical quantum state engineering, and (iv) their multilevel characteristics that lead to Qudits, where the dimension of the Hilbert space is d > 2. Herein we review how a molecular nuclear spin qudit, (d = 4), known as TbPc₂, gathers all the necessary requirements to perform as a molecular hardware platform with a first generation of molecular devices enabling even quantum algorithm operations.

Investigation on Single-Molecule Junctions Based on Current⁻Voltage Characteristics

The relationship between the current through an electronic device and the voltage across its terminals is a current–voltage characteristic (I–V) that determine basic device performance. Currently, I–V measurement on a single-molecule scale can be performed using break junction technique, where a single molecule junction can be prepared by trapping a single molecule into a nanogap between metal electrodes. The single-molecule I–Vs provide not only the device performance, but also reflect information on energy dispersion of the electronic state and the electron-molecular vibration coupling in the junction. This mini review focuses on recent representative studies on I–Vs of the single molecule junctions that cover investigation on the single-molecule diode property, the molecular vibration, and the electronic structure as a form of transmission probability, and electronic density of states, including the spin state of the single-molecule junctions. In addition, thermoelectronic measurements based on I–Vs and identification of the charged carriers (i.e., electrons or holes) are presented. The analysis in the single-molecule I–Vs provides fundamental and essential information for a better understanding of the single-molecule science, and puts the single molecule junction to more practical use in molecular devices.

Mechanically-Controlled Reversible Spin Crossover of Single Fe-Porphyrin Molecules

Spin-crossover (SCO) molecules are thought to be ideal systems for molecular spintronics when SCO can be precisely controlled at the single-molecule level. This is demonstrated here in the single-molecule junctions of Fe-porphyrin formed in a scanning tunneling microscope. Experimentally, we find that the junctions feature a zero-bias resonance in molecular conductance associated with the Fe spin center. When mechanically stretching or squeezing the junctions by adjusting the tip height, the line shape of the zero-bias resonance varies reversibly. First-principles calculations reveal that widening the junction gap by 2 Å transforms the macrocyclic core hosting the Fe center from a saddle to a planar conformation. This conformational change shortens the Fe-N bonds by 3%, which changes the Fe spin state from S = 2 to S = 1.

Switching Effects in Molecular Electronic Devices

The creation of molecular electronic switches by using smart molecules is of great importance to the field of molecular electronics. This requires a fundamental understanding of the intrinsic electron transport mechanisms, which depend on several factors including the charge transport pathway, the molecule-electrode coupling strength, the energy of the molecular frontier orbitals, and the electron spin state. On the basis of significant progresses achieved in both experiments and theory over the past decade, in this review article we focus on new insights into the design and fabrication of different molecular switches and the corresponding switching effects, which is crucial to the development of molecular electronics. We summarize the strategies developed for single-molecule device fabrication and the mechanism of these switching effects. These analyses should be valuable for deeply understanding the switching effects in molecular electronic devices.

Thioester-functionalised and oxime-based hexametallic manganese(iii) single-molecule magnets

Two novel oxime-based hexametallic manganese(iii) single-molecule magnets have been thioester-functionalised and characterised structurally and magnetically.

Single-Atom Switches and Single-Atom Gaps Using Stretched Metal Nanowires

Utilizing individual atoms or molecules as functional units in electronic circuits meets the increasing technical demands for the miniaturization of traditional semiconductor devices. To be of technological interest, these functional devices should be high-yield, consume low amounts of energy, and operate at room temperature. In this study, we developed nanodevices called quantized conductance atomic switches (QCAS) that satisfy these requirements. The QCAS operates by applying a feedback-controlled voltage to a nanoconstriction within a stretched nanowire. We demonstrated that individual metal atoms could be removed from the nanoconstriction and that the removed metal atoms could be refilled into the nanoconstriction, thus yielding a reversible quantized conductance switch. We determined the key parameters for the QCAS between the "on" and "off" states at room temperature under a small operating voltage. By controlling the applied bias voltage, the atoms can be further completely removed from the constriction to break the nanowire, generating single-atom nanogaps. These atomic nanogaps are quite stable under a sweeping voltage and can be readjusted with subangstrom accuracy, thus fulfilling the requirement of both reliability and flexibility for the high-yield fabrication of molecular devices.

Large Magnetoresistance at Room Temperature in Organic Molecular Tunnel Junctions with Nonmagnetic Electrodes

We report room-temperature resistance changes of up to 30% under weak magnetic fields (0.1 T) for molecular tunnel junctions composed of oligophenylene thiol molecules, 1-2 nm in length, sandwiched between gold contacts. The magnetoresistance (MR) is independent of field orientation and the length of the molecule; it appears to be an interface effect. Theoretical analysis suggests that the source of the MR is a two-carrier (two-hole) interaction at the interface, resulting in spin coupling between the tunneling hole and a localized hole at the Au/molecule contact. Such coupling leads to significantly different singlet and triplet transmission barriers at the interface. Even weak magnetic fields impede spin relaxation processes and thus modify the ratio of holes tunneling via the singlet state versus the triplet state, which leads to the large MR. Overall, the experiments and analysis suggest significant opportunities to explore large MR effects in molecular tunnel junctions based on widely available molecules.

Bias-induced conductance switching in single molecule junctions containing a redox-active transition metal complex

ABSTRACT

The paper provides a comprehensive theoretical description of electron transport through transition metal complexes in single molecule junctions, where the main focus is on an analysis of the structural parameters responsible for bias-induced conductance switching as found in recent experiments, where an interpretation was provided by our simulations. The switching could be theoretically explained by a two-channel model combining coherent electron transport and electron hopping, where the underlying mechanism could be identified as a charging of the molecule in the junction made possible by the presence of a localized electronic state on the transition metal center. In this article, we present a framework for the description of an electron hopping-based switching process within the semi-classical Marcus-Hush theory, where all relevant quantities are calculated on the basis of density functional theory (DFT). Additionally, structural aspects of the junction and their respective importance for the occurrence of irreversible switching are discussed.

GRAPHICAL ABSTRACT

Large Magnetoresistance in Single-Radical Molecular Junctions

Organic radicals are promising building blocks for molecular spintronics. Little is known about the role of unpaired electrons for electron transport at the single-molecule level. Here, we examine the impact of magnetic fields on electron transport in single oligo(p-phenyleneethynylene) (OPE)-based radical molecular junctions, which are formed with a mechanically controllable break-junction technique at a low temperature of 4.2 K. Surprisingly huge positive magnetoresistances (MRs) of 16 to 287% are visible for a magnetic field of 4 T, and the values are at least 1 order of magnitude larger than those of the analogous pristine OPE (2-4%). Rigorous analysis of the MR and of current-voltage and inelastic electron-tunneling spectroscopy measurements reveal an effective reduction of the electronic coupling between the current-carrying molecular orbital and the electrodes with increasing magnetic field. We suggest that the large MR for the single-radical molecular junctions might be ascribed to a loss of phase coherence of the charge carriers induced by the magnetic field. Although further investigations are required to reveal the mechanism underlying the strong MR, our findings provide a potential approach for tuning charge transport in metal-molecule junctions with organic radicals.

Cycloheptatrienyl trianion: an elusive bridge in the search of exchange coupled dinuclear organolanthanide single-molecule magnets

Lanthanide inverse sandwich compounds of the cycloheptatrienyl trianion give rise to ferromagnetic exchange and slow relaxation of the magnetisation.

The preparation of η-cyclopentadienyl (η⁵-C₅R₅), η-arene (η⁶-C₆R₆), and η-cyclooctatetraenyl (η⁸-C₈R₈) bridging motifs are common in organometallic chemistry; however, the synthetic preparation of η-cycloheptatrienyl (η⁷-C₇R₇) bridging motifs has remained a synthetic challenge in 4f chemistry. To this end, we have developed a synthetic route towards a series of rare dinuclear organolanthanide inverse sandwich complexes containing the elusive η⁷-C₇H₇ bridge. Herein, we present the structures and magnetic properties of the lanthanide inverse sandwich complexes [KLn₂(C₇H₇)(N(SiMe₃)₂)₄] (Ln = Gd^III (1), Dy^III (2), Er^III (3)) and [K(THF)₂Er₂(C₇H₇)(N(SiMe₃)₂)₄] (4). These compounds are the first single-molecule magnets (SMMs) to feature this type of bridging motif. Furthermore, η⁷-C₇H₇ was found to efficiently promote ferromagnetic exchange interactions between metal ions. Variable temperature dc magnetic susceptibility measurements and subsequent simulations give significant exchange constants of J = +1.384, +1.798, and +3.149 cm^–1 and dipolar constants of J = –0.603, –0.601, and –0.475 cm^–1 for compounds 2–4, respectively. Frequency dependent ac susceptibility measurements under an applied static field resulted in the observation of dual relaxation processes, and brought forth a greater understanding of the intermolecularly driven process at high frequency. In particular, this type of analysis of compound 3 under 800 Oe elicited an energy barrier of U_eff = 58 K. Ab initio calculations were performed in order to understand the nature of magnetic coupling and the origin of slow relaxation of magnetisation. Through these studies, the effect of the amido ancillary ligands on the magnetic axiality of the lanthanide ions was found to be competitive with the crystal field of the η⁷-C₇H₇ π-electron cloud. Our findings suggest that the tunability of the dipolar and exchange components of the magnetic interactions lie within the dihedral angle imposed by the amido ligands, thus offering potential for the development of new exchange coupled lanthanide systems.

Voltage-Induced Switching Dynamics of a Coupled Spin Pair in a Molecular Junction

Molecular spintronics is made possible by the coupling between electronic configuration and magnetic polarization of the molecules. For control and application of the individual molecular states, it is necessary to both read and write their spin states. Conventionally, this is achieved by means of external magnetic fields or ferromagnetic contacts, which may change the intentional spin state and may present additional challenges when downsizing devices. Here, we predict that coupling magnetic molecules together opens up possibilities for all electrical control of both the molecular spin states as well as the current flow through the system. By tuning between the regimes of ferromagnetic and antiferromagnetic exchange interaction, the current can be at least an order of magnitude enhanced or reduced. The effect is susceptible to the tunnel coupling and molecular level alignment that can be used to achieve current rectification.