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Song Q, Zhang Y, Chen Q, Wu S, Yan X, He K, Gao G, Chen Q, Wang S. Site-Selective Synthesis of Bilayer Graphene on Cu Substrates Using Titanium as a Carbon Diffusion Barrier. ACS APPLIED MATERIALS & INTERFACES 2024; 16:38355-38364. [PMID: 39011562 DOI: 10.1021/acsami.4c04521] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/17/2024]
Abstract
Chemical vapor deposition (CVD) is a widely used method for graphene synthesis, but it struggles to produce large-area uniform bilayer graphene (BLG). This study introduces a novel approach to meet the demands of large-scale integrated circuit applications, challenging the conventional reliance on uniform BLG over extensive areas. We developed a unique method involving the direct growth of bilayer graphene arrays (BLGA) on Cu foil substrates using patterned titanium (Ti) as a diffusion barrier. The use of the Ti layer can effectively control carbon atom diffusion through the Cu foil without altering the growth conditions or compromising the graphene quality, thereby showcasing its versatility. The approach allows for targeted BLG growth and achieved a yield of 100% for a 10 × 10 BLG units array. Then a 10 × 10 BLG memristor array was fabricated, and a yield of 96% was achieved. The performances of these devices show good uniformity, evidenced by the set voltages concentrated around 4 V, and a high resistance state (HRS) to low resistance state (LRS) ratio predominantly around 107, reflecting the spatial uniformity of the prepared BLGA. This study provides insight into the BLG growth mechanism and opens new possibilities for BLG-based electronics.
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Affiliation(s)
- Qiyang Song
- MOE Key Laboratory of Fundamental Physical Quantities Measurement & Hubei Key Laboratory of Gravitation and Quantum Physics, PGMF and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Youwei Zhang
- MOE Key Laboratory of Fundamental Physical Quantities Measurement & Hubei Key Laboratory of Gravitation and Quantum Physics, PGMF and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
- Shenzhen Huazhong University of Science and Technology Research Institute, Shenzhen 518057, China
| | - Qiao Chen
- MOE Key Laboratory of Fundamental Physical Quantities Measurement & Hubei Key Laboratory of Gravitation and Quantum Physics, PGMF and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Su Wu
- MOE Key Laboratory of Fundamental Physical Quantities Measurement & Hubei Key Laboratory of Gravitation and Quantum Physics, PGMF and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Xin Yan
- Key Laboratory of Ultra-fast Photoelectric Diagnostics Technology, Xi'an Institute of Optics and Precision Mechanics (XIOPM), Chinese Academy of Sciences (CAS), Xi'an, Shaanxi 710119, China
| | - Kai He
- Key Laboratory of Ultra-fast Photoelectric Diagnostics Technology, Xi'an Institute of Optics and Precision Mechanics (XIOPM), Chinese Academy of Sciences (CAS), Xi'an, Shaanxi 710119, China
| | - Guilong Gao
- Key Laboratory of Ultra-fast Photoelectric Diagnostics Technology, Xi'an Institute of Optics and Precision Mechanics (XIOPM), Chinese Academy of Sciences (CAS), Xi'an, Shaanxi 710119, China
| | - Qiao Chen
- Gemmological Institute, China University of Geosciences, Wuhan 430074, China
| | - Shun Wang
- MOE Key Laboratory of Fundamental Physical Quantities Measurement & Hubei Key Laboratory of Gravitation and Quantum Physics, PGMF and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
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2
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Zhang Q, Hao Y, Zeng T, Shu W, Xue P, Li Y, Huang C, Ouyang L, Zou X, Zhao Z, Wang J, Yu XF, Zhou W. Modular Fabrication of Microfluidic Graphene FET for Nucleic Acids Biosensing. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024:e2401796. [PMID: 39044365 DOI: 10.1002/advs.202401796] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/20/2024] [Revised: 04/30/2024] [Indexed: 07/25/2024]
Abstract
Graphene field-effect transistors (GFETs) are widely used in biosensing due to their excellent properties in biomolecular signal amplification, exhibiting great potential for high-sensitivity and point-of-care testing in clinical diagnosis. However, difficulties in complicated fabrication steps are the main limitations for the further studies and applications of GFETs. In this study, a modular fabrication technique is introduced to construct microfluidic GFET biosensors within 3 independent steps. The low-melting metal electrodes and intricate flow channels are incorporated to maintain the structural integrity of graphene and facilitate subsequent sensing operations. The as-fabricated GFET biosensor demonstrates excellent long-term stability, and performs effectively in various ion environments. It also exhibits high sensitivity and selectivity for detecting single-stranded nucleic acids at a 10 fm concentration. Furthermore, when combined with the CRISPR/Cas12a system, it facilitates amplification-free and rapid detection of nucleic acids at a concentration of 1 fm. Thus, it is believed that this modular-fabricated microfluidic GFET may shed light on further development of FET-based biosensors in various applications.
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Affiliation(s)
- Qiongdi Zhang
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China
| | - Yuxuan Hao
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China
| | - Tonghua Zeng
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China
| | - Weiliang Shu
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China
| | - Pan Xue
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China
- Southern University of Science and Technology, Shenzhen, 518055, China
| | - Yang Li
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China
| | - Chi Huang
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China
| | - Liwei Ouyang
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China
| | - Xuming Zou
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education and Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Zhen Zhao
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China
| | - Jiahong Wang
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China
| | - Xue-Feng Yu
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China
- The Key Laboratory of Biomedical Imaging Science and System, Chinese Academy of Sciences, Shenzhen, 518055, China
| | - Wenhua Zhou
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China
- The Key Laboratory of Biomedical Imaging Science and System, Chinese Academy of Sciences, Shenzhen, 518055, China
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3
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Li L, Zhang Q, Geng D, Meng H, Hu W. Atomic engineering of two-dimensional materials via liquid metals. Chem Soc Rev 2024; 53:7158-7201. [PMID: 38847021 DOI: 10.1039/d4cs00295d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/02/2024]
Abstract
Two-dimensional (2D) materials, known for their distinctive electronic, mechanical, and thermal properties, have attracted considerable attention. The precise atomic-scale synthesis of 2D materials opens up new frontiers in nanotechnology, presenting novel opportunities for material design and property control but remains challenging due to the high expense of single-crystal solid metal catalysts. Liquid metals, with their fluidity, ductility, dynamic surface, and isotropy, have significantly enhanced the catalytic processes crucial for synthesizing 2D materials, including decomposition, diffusion, and nucleation, thus presenting an unprecedented precise control over material structures and properties. Besides, the emergence of liquid alloy makes the creation of diverse heterostructures possible, offering a new dimension for atomic engineering. Significant achievements have been made in this field encompassing defect-free preparation, large-area self-aligned array, phase engineering, heterostructures, etc. This review systematically summarizes these contributions from the aspects of fundamental synthesis methods, liquid catalyst selection, resulting 2D materials, and atomic engineering. Moreover, the review sheds light on the outlook and challenges in this evolving field, providing a valuable resource for deeply understanding this field. The emergence of liquid metals has undoubtedly revolutionized the traditional nanotechnology for preparing 2D materials on solid metal catalysts, offering flexible possibilities for the advancement of next-generation electronics.
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Affiliation(s)
- Lin Li
- College of Chemistry, Tianjin Normal University, Tianjin 300387, China
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
| | - Qing Zhang
- Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China.
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
- School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen 518055, China
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
| | - Dechao Geng
- Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China.
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin 300192, China
| | - Hong Meng
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
| | - Wenping Hu
- Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China.
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin 300192, China
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4
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Feng Y, Khalid M, Xiao H, Hu P. Two-dimensional material assisted-growth strategy: new insights and opportunities. NANOTECHNOLOGY 2024; 35:322001. [PMID: 38688246 DOI: 10.1088/1361-6528/ad4553] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/24/2023] [Accepted: 04/30/2024] [Indexed: 05/02/2024]
Abstract
The exploration and synthesis of novel materials are integral to scientific and technological progress. Since the prediction and synthesis of two-dimensional (2D) materials, it is expected to play an important role in the application of industrialization and the information age, resulting from its excellent physical and chemical properties. Currently, researchers have effectively utilized a range of material synthesis techniques, including mechanical exfoliation, redox reactions, chemical vapor deposition, and chemical vapor transport, to fabricate two-dimensional materials. However, despite their rapid development, the widespread industrial application of 2D materials faces challenges due to demanding synthesis requirements and high costs. To address these challenges, assisted growth techniques such as salt-assisted, gas-assisted, organic-assisted, and template-assisted growth have emerged as promising approaches. Herein, this study gives a summary of important developments in recent years in the assisted growth synthesis of 2D materials. Additionally, it highlights the current difficulties and possible benefits of the assisted-growth approach for 2D materials. It also highlights novel avenues of development and presents opportunities for new lines of investigation.
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Affiliation(s)
- Yuming Feng
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150080, People's Republic of China
| | - Mansoor Khalid
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150080, People's Republic of China
| | - Haiying Xiao
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150080, People's Republic of China
| | - PingAn Hu
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150080, People's Republic of China
- Key Lab of Microsystem and Microstructure of Ministry of Education, Harbin Institute of Technology, Harbin 150080, People's Republic of China
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5
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Qing F, Guo X, Hou Y, Ning C, Wang Q, Li X. Toward the Production of Super Graphene. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2310678. [PMID: 38708801 DOI: 10.1002/smll.202310678] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/20/2023] [Revised: 04/10/2024] [Indexed: 05/07/2024]
Abstract
The quality requirements of graphene depend on the applications. Some have a high tolerance for graphene quality and even require some defects, while others require graphene as perfect as possible to achieve good performance. So far, synthesis of large-area graphene films by chemical vapor deposition of carbon precursors on metal substrates, especially on Cu, remains the main way to produce high-quality graphene, which has been significantly developed in the past 15 years. However, although many prototypes are demonstrated, their performance is still more or less far from the theoretical property limit of graphene. This review focuses on how to make super graphene, namely graphene with a perfect structure and free of contaminations. More specially, this study focuses on graphene synthesis on Cu substrates. Typical defects in graphene are first discussed together with the formation mechanisms and how they are characterized normally, followed with a brief review of graphene properties and the effects of defects. Then, the synthesis progress of super graphene from the aspects of substrate, grain size, wrinkles, contamination, adlayers, and point defects are reviewed. Graphene transfer is briefly discussed as well. Finally, the challenges to make super graphene are discussed and a strategy is proposed.
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Affiliation(s)
- Fangzhu Qing
- School of Integrated Circuit Science and Engineering (Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu, 611731, China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 611731, China
- Shenzhen Institute for Advanced Study, University of Electronic Science and Technology of China, Shenzhen, 518110, China
| | - Xiaomeng Guo
- School of Integrated Circuit Science and Engineering (Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Yuting Hou
- School of Integrated Circuit Science and Engineering (Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Congcong Ning
- School of Integrated Circuit Science and Engineering (Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Qisong Wang
- School of Integrated Circuit Science and Engineering (Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Xuesong Li
- School of Integrated Circuit Science and Engineering (Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu, 611731, China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 611731, China
- Shenzhen Institute for Advanced Study, University of Electronic Science and Technology of China, Shenzhen, 518110, China
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6
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Gautam C, Thakurta B, Pal M, Ghosh AK, Giri A. Wafer scale growth of single crystal two-dimensional van der Waals materials. NANOSCALE 2024; 16:5941-5959. [PMID: 38445855 DOI: 10.1039/d3nr06678a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/07/2024]
Abstract
Two-dimensional (2D) van der Waals (vdW) materials, including graphene, hexagonal boron nitride (hBN), and metal dichalcogenides (MCs), form the basis of modern electronics and optoelectronics due to their unique electronic structure, chemical activity, and mechanical strength. Despite many proof-of-concept demonstrations so far, to fully realize their large-scale practical applications, especially in devices, wafer-scale single crystal atomically thin highly uniform films are indispensable. In this minireview, we present an overview on the strategies and highlight recent significant advances toward the synthesis of wafer-scale single crystal graphene, hBN, and MC 2D thin films. Currently, there are five distinct routes to synthesize wafer-scale single crystal 2D vdW thin films: (i) nucleation-controlled growth by suppressing the nucleation density, (ii) unidirectional alignment of multiple epitaxial nuclei and their seamless coalescence, (iii) self-collimation of randomly oriented grains on a molten metal, (iv) surface diffusion and epitaxial self-planarization and (v) seed-mediated 2D vertical epitaxy. Finally, the challenges that need to be addressed in future studies have also been described.
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Affiliation(s)
- Chetna Gautam
- Department of Physics, Institute of Science, Banaras Hindu University, Varanasi, UP - 221005, India.
| | - Baishali Thakurta
- Department of Chemistry, Institute of Science, Banaras Hindu University, Varanasi, UP - 221005, India
| | - Monalisa Pal
- Department of Chemistry, Institute of Science, Banaras Hindu University, Varanasi, UP - 221005, India
| | - Anup Kumar Ghosh
- Department of Physics, Institute of Science, Banaras Hindu University, Varanasi, UP - 221005, India.
| | - Anupam Giri
- Department of Chemistry, Faculty of Science, University of Allahabad, Prayagraj, UP-211002, India
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7
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Liu B, Ma S. Precise synthesis of graphene by chemical vapor deposition. NANOSCALE 2024; 16:4407-4433. [PMID: 38291992 DOI: 10.1039/d3nr06041a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/01/2024]
Abstract
Graphene, a typical representative of the family of two-dimensional (2D) materials, possesses a series of phenomenal physical properties. To date, numerous inspiring discoveries have been made on its structures, properties, characterization, synthesis, transfer and applications. The real practical applications of this magic material indeed require large-scale synthesis and precise control over its structures, such as size, crystallinity, layer number, stacking order, edge type and contamination levels. Nonetheless, studies on the precise synthesis of graphene are far from satisfactory currently. Our review aims to deal with the precise synthesis of four critical graphene structures, including single-crystal graphene (SCG), AB-stacked bilayer graphene (AB-BLG), etched graphene and clean graphene. Meanwhile, existing problems and future directions in the precise synthesis of graphene are also briefly discussed.
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Affiliation(s)
- Bing Liu
- Ji Hua Laboratory, Foshan, 528200, P. R. China.
| | - Siguang Ma
- Ji Hua Laboratory, Foshan, 528200, P. R. China.
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8
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Xu M, Dong R, Gong X, Ma L. Mechanism of Controllable Growth of Large-Area Single-Crystal Hexagonal Boron Nitride on Preoxidized Copper Substrate. J Phys Chem Lett 2023; 14:11665-11672. [PMID: 38109335 DOI: 10.1021/acs.jpclett.3c02764] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/20/2023]
Abstract
Two-dimensional (2D) hexagonal boron nitride (h-BN) exhibits promising properties for electronic and photoelectric devices, while the growth of high-quality h-BN remains challenging. Here we theoretically explored the mechanism of epitaxial growth of high-quality h-BN by using the preoxidized and hydrogen-annealed copper substrate, i.e., Cu2O. It is revealed thermodynamically that the unidirectional nucleation of h-BN can be rationalized on the symmetry-matched Cu2O(111) surface rather than the antiparallel nucleation on the Cu(111) surface. Kinetically, the dehydrogenation of feedstock of h-BN on the Cu2O(111) surface is also much easier than that on the Cu(111) surface. Both the B and N atoms are energetically more preferred to stay on the surface rather than inside the body of Cu2O, which leads to a surface-diffusion-based growth behavior on the Cu2O(111) surface instead of the precipitation-diffusion mixed case on the Cu(111) surface. Our work may guide future experimental design for the controllable growth of wafer-scale single-crystal h-BN.
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Affiliation(s)
- Mingxia Xu
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing 211189, China
| | - Ruikang Dong
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing 211189, China
- School of Chemistry and Chemical Engineering, Southeast University, Nanjing 211189, China
| | - Xiaoshu Gong
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing 211189, China
| | - Liang Ma
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing 211189, China
- Suzhou Laboratory, Suzhou 215004, China
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9
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Zhang L, Kong X, Dong J, Ding F. A mechanism for thickness-controllable single crystalline 2D materials growth. Sci Bull (Beijing) 2023; 68:2936-2944. [PMID: 37951786 DOI: 10.1016/j.scib.2023.10.037] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/16/2023] [Revised: 10/02/2023] [Accepted: 10/27/2023] [Indexed: 11/14/2023]
Abstract
Recent efforts in growing two-dimensional (2D) multilayers have enabled the synthesis of single crystalline 2D multilayers in a wafer scale through the seamless stitching of multiple epitaxial 2D islands. Unlike previously observed wedding-cake or inverted-wedding-cake structures, these multilayer islands have the same size and shape in each layer with aligned edges. In this study, we investigated the underlying growth mechanisms of synchronic 2D multilayers growth and have showed that a heterogenous layer on a crystalline substrate is critical for maintaining the synchronic growth of 2D multilayers. During growth, the heterogenous layer passivates the edges of multilayer 2D island and thus prevents the coalescence of these active edges, while the high interfacial energy between the heterogenous surface layer and the substrate stabilizes the synchronic structure. Based on this model, we have successfully explained the previously observed synchronic growth of graphene and hexagonal boron nitride multilayers (Nat Nanotech 2020, 15: 861; Nature 2022, 606: 88). The deep understanding on the mechanism paves a way towards the synthesis of wafer-scale single-crystal 2D multilayers with a uniform thickness.
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Affiliation(s)
- Leining Zhang
- Beijing Key Laboratory of Construction Tailorable Advanced Functional Materials and Green Applications, MOE Key Laboratory of Cluster Science, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Xiao Kong
- State Key Laboratory of Information Functional Materials, 2020 X-Lab, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Jichen Dong
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China; School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Feng Ding
- Faculty of Materials Science and Engineering/Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China.
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10
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Zhao M, Zhang Z, Shi W, Li Y, Xue C, Hu Y, Ding M, Zhang Z, Liu Z, Fu Y, Liu C, Wu M, Liu Z, Li XZ, Wang ZJ, Liu K. Enhanced copper anticorrosion from Janus-doped bilayer graphene. Nat Commun 2023; 14:7447. [PMID: 37978192 PMCID: PMC10656578 DOI: 10.1038/s41467-023-43357-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/12/2023] [Accepted: 11/06/2023] [Indexed: 11/19/2023] Open
Abstract
The atomic-thick anticorrosion coating for copper (Cu) electrodes is essential for the miniaturisation in the semiconductor industry. Graphene has long been expected to be the ultimate anticorrosion material, however, its real anticorrosion performance is still under great controversy. Specifically, strong electronic couplings can limit the interfacial diffusion of corrosive molecules, whereas they can also promote the surficial galvanic corrosion. Here, we report the enhanced anticorrosion for Cu simply via a bilayer graphene coating, which provides protection for more than 5 years at room temperature and 1000 h at 200 °C. Such excellent anticorrosion is attributed to a nontrivial Janus-doping effect in bilayer graphene, where the heavily doped bottom layer forms a strong interaction with Cu to limit the interfacial diffusion, while the nearly charge neutral top layer behaves inertly to alleviate the galvanic corrosion. Our study will likely expand the application scenarios of Cu under various extreme operating conditions.
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Affiliation(s)
- Mengze Zhao
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Zhibin Zhang
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China.
- Songshan Lake Materials Laboratory, Institute of Physics, Chinese Academy of Sciences, Dongguan, China.
| | - Wujun Shi
- Center for Transformative Science, ShanghaiTech University, Shanghai, China
- Shanghai High Repetition Rate XFEL and Extreme Light Facility (SHINE), ShanghaiTech University, Shanghai, China
| | - Yiwei Li
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, China
- Institute for Advanced Studies (IAS), Wuhan University, Wuhan, China
| | - Chaowu Xue
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, China
| | - Yuxiong Hu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, China
| | - Mingchao Ding
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Zhiqun Zhang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, China
| | - Zhi Liu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, China
- Center for Transformative Science, ShanghaiTech University, Shanghai, China
| | - Ying Fu
- Songshan Lake Materials Laboratory, Institute of Physics, Chinese Academy of Sciences, Dongguan, China
| | - Can Liu
- Department of Physics, Renmin University of China, Beijing, China
| | - Muhong Wu
- Songshan Lake Materials Laboratory, Institute of Physics, Chinese Academy of Sciences, Dongguan, China
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing, China
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Centre for Light-Element Advanced Materials, Peking University, Beijing, China
| | - Zhongkai Liu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, China
| | - Xin-Zheng Li
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Centre for Light-Element Advanced Materials, Peking University, Beijing, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu, China
| | - Zhu-Jun Wang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, China.
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China.
- Songshan Lake Materials Laboratory, Institute of Physics, Chinese Academy of Sciences, Dongguan, China.
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing, China.
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu, China.
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11
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Wang Y, Chen Z, Qu Y, Zhang M, Ren Y, Sun H, Li Y, Deng Y, Li S, Nie Y, Xiang H, Wu Y, Shi Y, Zeng H, Hao Y. A Bifunctional Optoelectronic Device for Photodetection and Photoluminescence Switching Based on Graphene/ZnTe/Graphene van der Waals Heterostructures. ACS NANO 2023; 17:21829-21837. [PMID: 37922194 DOI: 10.1021/acsnano.3c07814] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/05/2023]
Abstract
Controlling the dynamic processes, such as generation, separation, transport, and recombination, of photoexcited carriers in a semiconductor is foundational in the design of various devices for optoelectronic applications. One may imagine that if different processes can be manipulated in one single device and thus generate useful signals, a multifunctional device can be realized, and the toolbox for integrated optoelectronics will be expanded. Here, we revealed that in a graphene/ZnTe/graphene van der Waals (vdW) heterostructure, the carriers can be generated by illumination from visible to infrared frequencies, and thus, the detected spectrum range extends to the communication band, well beyond the band gap of ZnTe (2.26 eV). More importantly, we are able to control the competition between separation and recombination of the photoexcited carriers by an electric bias along the thickness-defined channel of the ZnTe flake: as the bias increases, the photodetecting performance, e.g. response speed and photocurrent, are improved due to the efficient separation of carriers; synchronously, the photoluminescence (PL) intensity decreases and even switches off due to the suppressed recombination process. The ZnTe-based vdW heterostructure device thus integrates both photodetection and PL switching functions by manipulating the generation, separation, transport, and recombination of carriers, which may inspire the design of the next generation of miniaturized optoelectronic devices based on the vdW heterostructures made by various thin flakes.
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Affiliation(s)
- Yushu Wang
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, People's Republic of China
| | - Zhesheng Chen
- MIIT Key Laboratory of Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
| | - Yan Qu
- The Sixth Element (Changzhou) Materials Technology Co., Ltd. and Jiangsu Jiangnan Xiyuan Graphene Technology Co., LTD, Changzhou 213161, People's Republic of China
| | - Mingrui Zhang
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, People's Republic of China
| | - Yifeng Ren
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, People's Republic of China
| | - Haoying Sun
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, People's Republic of China
| | - Yuan Li
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, People's Republic of China
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Optoelectronics, Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, People's Republic of China
| | - Yu Deng
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, People's Republic of China
| | - Songlin Li
- National Laboratory of Solid State Microstructures, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, People's Republic of China
| | - Yuefeng Nie
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, People's Republic of China
| | - Hengyang Xiang
- MIIT Key Laboratory of Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
| | - Yaping Wu
- Department of Physics, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Yi Shi
- National Laboratory of Solid State Microstructures, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, People's Republic of China
| | - Haibo Zeng
- MIIT Key Laboratory of Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
| | - Yufeng Hao
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, People's Republic of China
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12
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Hou T, Li D, Qu Y, Hao Y, Lai Y. The Role of Carbon in Metal-Organic Chemical Vapor Deposition-Grown MoS 2 Films. MATERIALS (BASEL, SWITZERLAND) 2023; 16:7030. [PMID: 37959627 PMCID: PMC10647219 DOI: 10.3390/ma16217030] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/25/2023] [Revised: 10/20/2023] [Accepted: 11/01/2023] [Indexed: 11/15/2023]
Abstract
Acquiring homogeneous and reproducible wafer-scale transition metal dichalcogenide (TMDC) films is crucial for modern electronics. Metal-organic chemical vapor deposition (MOCVD) offers a promising approach for scalable production and large-area integration. However, during MOCVD synthesis, extraneous carbon incorporation due to organosulfur precursor pyrolysis is a persistent concern, and the role of unintentional carbon incorporation remains elusive. Here, we report the large-scale synthesis of molybdenum disulfide (MoS2) thin films, accompanied by the formation of amorphous carbon layers. Using Raman, photoluminescence (PL) spectroscopy, and transmission electron microscopy (TEM), we confirm how polycrystalline MoS2 combines with extraneous amorphous carbon layers. Furthermore, by fabricating field-effect transistors (FETs) using the carbon-incorporated MoS2 films, we find that traditional n-type MoS2 can transform into p-type semiconductors owing to the incorporation of carbon, a rare occurrence among TMDC materials. This unexpected behavior expands our understanding of TMDC properties and opens up new avenues for exploring novel device applications.
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Affiliation(s)
- Tianyu Hou
- National Laboratory of Solid State Microstructures, School of Physics, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, China
| | - Di Li
- Key Laboratory of Photovoltaic and Energy Conservation Materials, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China
| | - Yan Qu
- The Sixth Element (Changzhou) Materials Technology Co., Ltd. and Jiangsu Jiangnan Xiyuan Graphene Technology Co., Ltd., Changzhou 213161, China
| | - Yufeng Hao
- National Laboratory of Solid State Microstructures, School of Physics, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, China
| | - Yun Lai
- National Laboratory of Solid State Microstructures, School of Physics, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, China
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13
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Hong HC, Ryu JI, Lee HC. Recent Understanding in the Chemical Vapor Deposition of Multilayer Graphene: Controlling Uniformity, Thickness, and Stacking Configuration. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2217. [PMID: 37570535 PMCID: PMC10421010 DOI: 10.3390/nano13152217] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2023] [Revised: 07/24/2023] [Accepted: 07/28/2023] [Indexed: 08/13/2023]
Abstract
Multilayer graphene has attracted significant attention because its physical properties can be tuned by stacking its layers in a particular configuration. To apply the intriguing properties of multilayer graphene in various optoelectronic or spintronic devices, it is essential to develop a synthetic method that enables the control of the stacking configuration. This review article presents the recent progress in the synthesis of multilayer graphene by chemical vapor deposition (CVD). First, we discuss the CVD of multilayer graphene, utilizing the precipitation or segregation of carbon atoms from metal catalysts with high carbon solubility. Subsequently, we present novel CVD approaches to yield uniform and thickness-controlled multilayer graphene, which goes beyond the conventional precipitation or segregation methods. Finally, we introduce the latest studies on the control of stacking configurations in bilayer graphene during CVD processes.
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Affiliation(s)
| | | | - Hyo Chan Lee
- Department of Chemical Engineering, Myongji University, Yongin 17058, Republic of Korea
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14
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Li Q, Liu T, Li Y, Li F, Zhao Y, Huang S. A Wrinkling and Etching-Assisted Regrowth Strategy for Large-Area Bilayer Graphene Preparation on Cu. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2059. [PMID: 37513070 PMCID: PMC10385747 DOI: 10.3390/nano13142059] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/12/2023] [Revised: 07/05/2023] [Accepted: 07/10/2023] [Indexed: 07/30/2023]
Abstract
Bilayer graphene is a contender of interest for functional electronic applications because of its variable band gap due to interlayer interactions. Graphene growth on Cu is self-limiting, thus despite the fact that chemical vapor deposition (CVD) has made substantial strides in the production of monolayer and single-crystal graphene on Cu substrates, the direct synthesizing of high-quality, large-area bilayer graphene remains an enormous challenge. In order to tackle this issue, we present a simple technique using typical CVD graphene growth followed by a repetitive wrinkling-etching-regrowth procedure. The key element of our approach is the rapid cooling process that causes high-density wrinkles to form in the monolayer area rather than the bilayer area. Next, wrinkled sites are selectively etched with hydrogen, exposing a significant portion of the active Cu surface, and leaving the remaining bilayer areas, which enhance the nucleation and growth of the second graphene layer. A fully covered graphene with 78 ± 2.8% bilayer coverage and a bilayer transmittance of 95.6% at room temperature can be achieved by modifying the process settings. Bilayer graphene samples are examined using optical microscopy (OM), scanning electron microscopy (SEM), Raman spectroscopy, and an atomic force microscope (AFM) during this process. The outcomes of our research are beneficial in clarifying the growth processes and future commercial applications of bilayer graphene.
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Affiliation(s)
- Qiongyu Li
- School of Electronic, Electrical Engineering and Physics, Fujian University of Technology, Fuzhou 350118, China
| | - Tongzhi Liu
- School of Electronic, Electrical Engineering and Physics, Fujian University of Technology, Fuzhou 350118, China
| | - You Li
- MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing, Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Fang Li
- MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing, Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Yanshuai Zhao
- School of Electronic, Electrical Engineering and Physics, Fujian University of Technology, Fuzhou 350118, China
| | - Shihao Huang
- School of Electronic, Electrical Engineering and Physics, Fujian University of Technology, Fuzhou 350118, China
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15
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Zhang J, Liu X, Zhang M, Zhang R, Ta HQ, Sun J, Wang W, Zhu W, Fang T, Jia K, Sun X, Zhang X, Zhu Y, Shao J, Liu Y, Gao X, Yang Q, Sun L, Li Q, Liang F, Chen H, Zheng L, Wang F, Yin W, Wei X, Yin J, Gemming T, Rummeli MH, Liu H, Peng H, Lin L, Liu Z. Fast synthesis of large-area bilayer graphene film on Cu. Nat Commun 2023; 14:3199. [PMID: 37268632 DOI: 10.1038/s41467-023-38877-9] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/03/2022] [Accepted: 05/19/2023] [Indexed: 06/04/2023] Open
Abstract
Bilayer graphene (BLG) is intriguing for its unique properties and potential applications in electronics, photonics, and mechanics. However, the chemical vapor deposition synthesis of large-area high-quality bilayer graphene on Cu is suffering from a low growth rate and limited bilayer coverage. Herein, we demonstrate the fast synthesis of meter-sized bilayer graphene film on commercial polycrystalline Cu foils by introducing trace CO2 during high-temperature growth. Continuous bilayer graphene with a high ratio of AB-stacking structure can be obtained within 20 min, which exhibits enhanced mechanical strength, uniform transmittance, and low sheet resistance in large area. Moreover, 96 and 100% AB-stacking structures were achieved in bilayer graphene grown on single-crystal Cu(111) foil and ultraflat single-crystal Cu(111)/sapphire substrates, respectively. The AB-stacking bilayer graphene exhibits tunable bandgap and performs well in photodetection. This work provides important insights into the growth mechanism and the mass production of large-area high-quality BLG on Cu.
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Affiliation(s)
- Jincan Zhang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China
- Beijing Graphene Institute, 100095, Beijing, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, 100871, Beijing, P. R. China
- Department of Engineering, University of Cambridge, Cambridge, CB3 0FA, UK
| | - Xiaoting Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China
- Beijing Graphene Institute, 100095, Beijing, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, 100871, Beijing, P. R. China
| | - Mengqi Zhang
- Beijing Graphene Institute, 100095, Beijing, P. R. China
- School of Material Science and Engineering, Tianjin Key Laboratory of Advanced Fibers and Energy Storage, State Key Laboratory of Separation Membranes and Membrane Processes, Tiangong University, 300387, Tianjin, P. R. China
| | - Rui Zhang
- Department of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, UK
| | - Huy Q Ta
- Leibniz Institute for Solid State and Materials Research Dresden, P.O. Box 270116, D-01171, Dresden, Germany
| | - Jianbo Sun
- Beijing Graphene Institute, 100095, Beijing, P. R. China
| | - Wendong Wang
- Department of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, UK
| | - Wenqing Zhu
- State Key Laboratory for Turbulence and Complex System, Department of Mechanics and Engineering Science, College of Engineering, Peking University, 100871, Beijing, P. R. China
| | - Tiantian Fang
- CAS Key Laboratory of Analytical Chemistry for Living Biosystems, Institute of Chemistry, Chinese Academy of Sciences, 100190, Beijing, P. R. China
| | - Kaicheng Jia
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China
- Beijing Graphene Institute, 100095, Beijing, P. R. China
| | - Xiucai Sun
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China
- Beijing Graphene Institute, 100095, Beijing, P. R. China
| | - Xintong Zhang
- Beijing Graphene Institute, 100095, Beijing, P. R. China
| | - Yeshu Zhu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China
- Beijing Graphene Institute, 100095, Beijing, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, 100871, Beijing, P. R. China
| | - Jiaxin Shao
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China
- Beijing Graphene Institute, 100095, Beijing, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, 100871, Beijing, P. R. China
| | - Yuchen Liu
- Beijing Graphene Institute, 100095, Beijing, P. R. China
| | - Xin Gao
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China
- Beijing Graphene Institute, 100095, Beijing, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, 100871, Beijing, P. R. China
| | - Qian Yang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China
- Beijing Graphene Institute, 100095, Beijing, P. R. China
| | - Luzhao Sun
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China
- Beijing Graphene Institute, 100095, Beijing, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, 100871, Beijing, P. R. China
| | - Qin Li
- Beijing Graphene Institute, 100095, Beijing, P. R. China
| | - Fushun Liang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China
- Beijing Graphene Institute, 100095, Beijing, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, 100871, Beijing, P. R. China
| | - Heng Chen
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China
- Beijing Graphene Institute, 100095, Beijing, P. R. China
| | - Liming Zheng
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China
- Beijing Graphene Institute, 100095, Beijing, P. R. China
| | - Fuyi Wang
- Beijing National Laboratory for Molecular Sciences, National Centre for Mass Spectrometry in Beijing, CAS Key Laboratory of Analytical Chemistry for Living Biosystems, Institute of Chemistry, Chinese Academy of Sciences, 100190, Beijing, P. R. China
| | - Wanjian Yin
- Soochow Institute for Energy and Materials Innovations, Soochow University, 215006, Suzhou, P. R. China
| | - Xiaoding Wei
- State Key Laboratory for Turbulence and Complex System, Department of Mechanics and Engineering Science, College of Engineering, Peking University, 100871, Beijing, P. R. China
| | - Jianbo Yin
- Beijing Graphene Institute, 100095, Beijing, P. R. China
| | - Thomas Gemming
- Leibniz Institute for Solid State and Materials Research Dresden, P.O. Box 270116, D-01171, Dresden, Germany
| | - Mark H Rummeli
- Leibniz Institute for Solid State and Materials Research Dresden, P.O. Box 270116, D-01171, Dresden, Germany
- Soochow Institute for Energy and Materials Innovations, Soochow University, 215006, Suzhou, P. R. China
- Centre of Polymer and Carbon Materials, Polish Academy of Sciences, M. Curie-Skłodowskiej 34, Zabrze, 41-819, Poland
- Institute of Environmental Technology, VŠB -Technical University of Ostrava, 17 Listopadu 15, Ostrava, 708 33, Czech Republic
| | - Haihui Liu
- School of Material Science and Engineering, Tianjin Key Laboratory of Advanced Fibers and Energy Storage, State Key Laboratory of Separation Membranes and Membrane Processes, Tiangong University, 300387, Tianjin, P. R. China.
| | - Hailin Peng
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China.
- Beijing Graphene Institute, 100095, Beijing, P. R. China.
| | - Li Lin
- School of Materials Science and Engineering, Peking University, 100871, Beijing, P. R. China.
| | - Zhongfan Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, 100871, Beijing, P. R. China.
- Beijing Graphene Institute, 100095, Beijing, P. R. China.
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16
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Xiao B, Yin M, Li W, Liang L, Dai S, Zhang X, Wang W, Liu Z. Significant Enhanced Mechanical Properties of Suspended Graphene Film by Stacking Multilayer CVD Graphene Films. MICROMACHINES 2023; 14:745. [PMID: 37420978 DOI: 10.3390/mi14040745] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/24/2023] [Revised: 03/21/2023] [Accepted: 03/24/2023] [Indexed: 07/09/2023]
Abstract
Suspended graphene film is of great significance for building high-performance electrical devices. However, fabricating large-area suspended graphene film with good mechanical properties is still a challenge, especially for the chemical vapor deposition (CVD)-grown graphene films. In this work, the mechanical properties of suspended CVD-grown graphene film are investigated systematically for the first time. It is found that monolayer graphene film is hard to maintain on circular holes with a diameter of tens of micrometers, which can be improved greatly by increasing the layer of graphene films. The mechanical properties of CVD-grown multilayer graphene films suspended on a circular hole with a diameter of 70 µm can be increased by 20%, and multilayer graphene films prepared by layer-layer stacking process can be increased by up to 400% for the same size. The corresponding mechanism was also discussed in detail, which might pave the way for building high-performance electrical devices based on high-strength suspended graphene film.
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Affiliation(s)
- Binbin Xiao
- Faculty of Electrical Engineering and Computer Science, Ningbo University, Ningbo 315211, China
- Key Laboratory of Graphene Technologies and Applications of Zhejiang Province, CAS Engineering Laboratory for Graphene, Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Mengqing Yin
- Faculty of Electrical Engineering and Computer Science, Ningbo University, Ningbo 315211, China
- Key Laboratory of Graphene Technologies and Applications of Zhejiang Province, CAS Engineering Laboratory for Graphene, Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Wanfa Li
- Key Laboratory of Advanced Nano Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Lingyan Liang
- Key Laboratory of Advanced Nano Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Shixun Dai
- Faculty of Electrical Engineering and Computer Science, Ningbo University, Ningbo 315211, China
| | - Xiaohui Zhang
- CRRC Industrial Academy Co., Ltd., Beijing 100039, China
| | - Wei Wang
- Key Laboratory of Graphene Technologies and Applications of Zhejiang Province, CAS Engineering Laboratory for Graphene, Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Zhaoping Liu
- Key Laboratory of Graphene Technologies and Applications of Zhejiang Province, CAS Engineering Laboratory for Graphene, Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo 315201, China
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17
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Chen C, Yin Y, Zhang R, Yuan Q, Xu Y, Zhang Y, Chen J, Zhang Y, Li C, Wang J, Li J, Fei L, Yu Q, Zhou Z, Zhang H, Cheng R, Dong Z, Xu X, Pan A, Zhang K, He J. Growth of single-crystal black phosphorus and its alloy films through sustained feedstock release. NATURE MATERIALS 2023:10.1038/s41563-023-01516-1. [PMID: 36959500 DOI: 10.1038/s41563-023-01516-1] [Citation(s) in RCA: 25] [Impact Index Per Article: 25.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/21/2022] [Accepted: 02/24/2023] [Indexed: 05/04/2023]
Abstract
Black phosphorus (BP), a fascinating semiconductor with high mobility and a tunable direct bandgap, has emerged as a candidate beyond traditional silicon-based devices for next-generation electronics and optoelectronics. The ability to grow large-scale, high-quality BP films is a prerequisite for scalable integrated applications but has thus far remained a challenge due to unmanageable nucleation events. Here we develop a sustained feedstock release strategy to achieve subcentimetre-size single-crystal BP films by facilitating the lateral growth mode under a low nucleation rate. The as-grown single-crystal BP films exhibit high crystal quality, which brings excellent field-effect electrical properties and observation of pronounced Shubnikov-de Haas oscillations, with high mobilities up to ~6,500 cm2 V-1 s-1 at low temperatures. We further extend this approach to the growth of single-crystal BP alloy films, which broaden the infrared emission regime of BP from 3.7 μm to 6.9 μm at room temperature. This work will greatly facilitate the development of high-performance electronics and optoelectronics based on BP family materials.
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Affiliation(s)
- Cheng Chen
- CAS Key Laboratory of Nano-Bio Interface & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, China
| | - Yuling Yin
- State Key Laboratory of Precision Spectroscopy, School of Physics and Electronic Science, East China Normal University, Shanghai, China
| | - Rencong Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Qinghong Yuan
- State Key Laboratory of Precision Spectroscopy, School of Physics and Electronic Science, East China Normal University, Shanghai, China
| | - Yang Xu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Yushuang Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, China
- State Key Laboratory of Pulsed Power Laser Technology, College of Electronic Engineering, National University of Defense Technology, Hefei, China
| | - Jie Chen
- CAS Key Laboratory of Nano-Bio Interface & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
| | - Yan Zhang
- CAS Key Laboratory of Nano-Bio Interface & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, China
| | - Chang Li
- CAS Key Laboratory of Nano-Bio Interface & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
| | - Junyong Wang
- CAS Key Laboratory of Nano-Bio Interface & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
| | - Jie Li
- CAS Key Laboratory of Nano-Bio Interface & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
| | - Linfeng Fei
- School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi, China
| | - Qiang Yu
- CAS Key Laboratory of Nano-Bio Interface & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
| | - Zheng Zhou
- CAS Key Laboratory of Nano-Bio Interface & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
| | - Huisheng Zhang
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education & Research Institute of Materials Science, Shanxi Normal University, Taiyuan, China
| | - Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, China
| | - Zhuo Dong
- CAS Key Laboratory of Nano-Bio Interface & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, China
| | - Xiaohong Xu
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education & Research Institute of Materials Science, Shanxi Normal University, Taiyuan, China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, China.
| | - Kai Zhang
- CAS Key Laboratory of Nano-Bio Interface & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China.
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, China.
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, China.
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18
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Multifunctional graphene heterogeneous nanochannel with voltage-tunable ion selectivity. Nat Commun 2022; 13:4894. [PMID: 35985996 PMCID: PMC9391377 DOI: 10.1038/s41467-022-32590-9] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/24/2022] [Accepted: 08/08/2022] [Indexed: 11/22/2022] Open
Abstract
Ion-selective nanoporous two-dimensional (2D) materials have shown extraordinary potential in energy conversion, ion separation, and nanofluidic devices; however, different applications require diverse nanochannel devices with different ion selectivity, which is limited by sample preparation and experimental techniques. Herein, we develop a heterogeneous graphene-based polyethylene terephthalate nanochannel (GPETNC) with controllable ion sieving to overcome those difficulties. Simply by adjusting the applied voltage, ion selectivity among K+, Na+, Li+, Ca2+, and Mg2+ of the GPETNC can be immediately tuned. At negative voltages, the GPETNC serves as a mono/divalent ion selective device by impeding most divalent cations to transport through; at positive voltages, it mimics a biological K+ nanochannel, which conducts K+ much more rapidly than the other ions with K+/ions selectivity up to about 4.6. Besides, the GPETNC also exhibits the promise as a cation-responsive nanofluidic diode with the ability to rectify ion currents. Theoretical calculations indicate that the voltage-dependent ion enrichment/depletion inside the GPETNC affects the effective surface charge density of the utilized graphene subnanopores and thus leads to the electrically controllable ion sieving. This work provides ways to develop heterogeneous nanochannels with tunable ion selectivity toward broad applications. Nanoporous 2D materials have shown promising potential for ion sieving applications due to their physical and chemical properties. Here authors develop a heterogeneous graphene-based polyethylene terephthalate nanochannel with ion sieving ability that is controlled by adjusting the applied voltage.
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Zhang Q, Xiao X, Li L, Geng D, Chen W, Hu W. Additive-Assisted Growth of Scaled and Quality 2D Materials. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2107241. [PMID: 35092150 DOI: 10.1002/smll.202107241] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/23/2021] [Revised: 12/19/2021] [Indexed: 06/14/2023]
Abstract
2D materials are increasingly becoming key components in modern electronics because of their prominent electronic and optoelectronic properties. The central and premise to the entire discipline of 2D materials lie in the high-quality and scaled preparations. The chemical vapor deposition (CVD) method offers compelling benefits in terms of scalability and controllability in shaping large-area and high-quality 2D materials. The past few years have witnessed development of numerous CVD growth strategies, with the use of additives attracting substantial attention in the production of scaled 2D crystals. This review provides an overview of different additives used in CVD growth of 2D materials, as well as a methodical demonstration of their vital roles. In addition, the intrinsic mechanisms of the production of scaled 2D crystals with additives are also discussed. Lastly, reliable guidance on the future design of optimal CVD synthesis routes is provided by analyzing the accessibility, pricing, by-products, controllability, universality, and commercialization of various additives.
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Affiliation(s)
- Qing Zhang
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou, 350207, China
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
| | - Xixi Xiao
- Department of Chemistry, Tianjin University & Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China
| | - Lin Li
- Institute of Molecular Plus, Tianjin University, Tianjin, 300072, China
| | - Dechao Geng
- Department of Chemistry, Tianjin University & Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China
| | - Wei Chen
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou, 350207, China
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
| | - Wenping Hu
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou, 350207, China
- Department of Chemistry, Tianjin University & Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China
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20
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Liu X, Kang W, Li X, Zeng L, Li Y, Wang Q, Zhang C. Solid-state mechanochemistry advancing two dimensional materials for lithium-ion storage applications: A mini review. NANO MATERIALS SCIENCE 2022. [DOI: 10.1016/j.nanoms.2022.03.005] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/26/2022]
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21
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Gong P, Tang C, Wang B, Xiao T, Zhu H, Li Q, Sun Z. Precise CO 2 Reduction for Bilayer Graphene. ACS CENTRAL SCIENCE 2022; 8:394-401. [PMID: 35355814 PMCID: PMC8949624 DOI: 10.1021/acscentsci.1c01578] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/23/2021] [Indexed: 06/04/2023]
Abstract
It is of great significance to explore unique and diverse chemical pathways to convert CO2 into high-value-added products. Bilayer graphene (BLG), with a tunable twist angle and band structure, holds tremendous promise in both fundamental physics and next-generation high-performance devices. However, the π-conjugation and precise two-atom thickness are hindering the selective pathway, through an uncontrolled CO2 reduction and perplexing growth mechanism. Here, we developed a chemical vapor deposition method to catalytically convert CO2 into a high-quality BLG single crystal with a room temperature mobility of 2346 cm2 V-1 s-1. In a finely controlled growth window, the CO2 molecule works as both the carbon source and the oxygen etchant, helping to precisely define the BLG nucleus and set a record growth rate of 300 μm h-1.
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Affiliation(s)
- Peng Gong
- Department
of Chemistry and Shanghai Key Laboratory of Molecular Catalysis and
Innovative Materials, Fudan University, Shanghai 200433, P. R. China
| | - Can Tang
- Department
of Chemistry and Shanghai Key Laboratory of Molecular Catalysis and
Innovative Materials, Fudan University, Shanghai 200433, P. R. China
| | - Boran Wang
- School
of Microelectronics, Fudan University, Shanghai 200433, P. R. China
| | - Taishi Xiao
- Department
of Chemistry and Shanghai Key Laboratory of Molecular Catalysis and
Innovative Materials, Fudan University, Shanghai 200433, P. R. China
| | - Hao Zhu
- School
of Microelectronics, Fudan University, Shanghai 200433, P. R. China
| | - Qiaowei Li
- Department
of Chemistry and Shanghai Key Laboratory of Molecular Catalysis and
Innovative Materials, Fudan University, Shanghai 200433, P. R. China
| | - Zhengzong Sun
- Department
of Chemistry and Shanghai Key Laboratory of Molecular Catalysis and
Innovative Materials, Fudan University, Shanghai 200433, P. R. China
- School
of Microelectronics, Fudan University, Shanghai 200433, P. R. China
- Yiwu
Research Institute of Fudan University, Yiwu, Zhejiang 322000, P. R. China
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22
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Zhu L, Tang J, Li B, Hou T, Zhu Y, Zhou J, Wang Z, Zhu X, Yao Z, Cui X, Watanabe K, Taniguchi T, Li Y, Han ZV, Zhou W, Huang Y, Liu Z, Hone JC, Hao Y. Artificial Neuron Networks Enabled Identification and Characterizations of 2D Materials and van der Waals Heterostructures. ACS NANO 2022; 16:2721-2729. [PMID: 35040630 DOI: 10.1021/acsnano.1c09644] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Two-dimensional (2D) materials and their in-plane and out-of-plane (i.e., van der Waals, vdW) heterostructures are promising building blocks for next-generation electronic and optoelectronic devices. Since the performance of the devices is strongly dependent on the crystalline quality of the materials and the interface characteristics of the heterostructures, a fast and nondestructive method for distinguishing and characterizing various 2D building blocks is desirable to promote the device integrations. In this work, based on the color space information on 2D materials' optical microscopy images, an artificial neural network-based deep learning algorithm is developed and applied to identify eight kinds of 2D materials with accuracy well above 90% and a mean value of 96%. More importantly, this data-driven method enables two interesting functionalities: (1) resolving the interface distribution of chemical vapor deposition (CVD) grown in-plane and vdW heterostructures and (2) identifying defect concentrations of CVD-grown 2D semiconductors. The two functionalities can be utilized to quickly identify sample quality and optimize synthesis parameters in the future. Our work improves the characterization efficiency of atomically thin materials and is therefore valuable for their research and applications.
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Affiliation(s)
- Li Zhu
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, China
| | - Jing Tang
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, China
| | - Baichang Li
- Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States
| | - Tianyu Hou
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, China
| | - Yong Zhu
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049 China
| | - Jiadong Zhou
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems and School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Zhi Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Material Science and Engineering, University of Science and Technology of China, Anhui 230026, China
| | - Xiaorong Zhu
- Jiangsu Key Laboratory of Biofunctional Materials, College of Chemistry and Materials Science, Nanjing Normal University, Nanjing 210023, China
| | - Zhenpeng Yao
- The State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, and Center of Hydrogen Science, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Xu Cui
- AutoX Technologies, Inc., San Jose, California 95131, United States
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Yafei Li
- Jiangsu Key Laboratory of Biofunctional Materials, College of Chemistry and Materials Science, Nanjing Normal University, Nanjing 210023, China
| | - Zheng Vitto Han
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opto-Electronics, Shanxi University, Taiyuan 030006, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China
| | - Wu Zhou
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049 China
| | - Yuan Huang
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
| | - Zheng Liu
- Centre for Programmed Materials, School of Materials Science and Engineering, Nanyang Technological University, 639798 Singapore
| | - James C Hone
- Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States
| | - Yufeng Hao
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, China
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23
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Abstract
Chemical vapor deposition (CVD) is a promising approach for the controllable synthesis of two-dimensional (2D) materials. Many studies have demonstrated that the morphology and structure of 2D materials are highly dependent on growth substrates. Hence, the choice of growth substrates is essential to achieve the precise control of CVD growth. Noble metal substrates have attracted enormous interest owing to the high catalytic activity and rich surface morphology for 2D material growth. In this review, we introduce recent progress in noble metals as substrates for the controllable growth of 2D materials. The underlying growth mechanism and substrate designs of noble metals based on their unique features are thoroughly discussed. In the end, we outline the advantages and challenges of using noble metal substrates and prospect the possible approaches to extend the uses of noble metal substrates for 2D material growth and enhance the structural controllability of the grown materials.
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Affiliation(s)
- Yang Gao
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Yang Liu
- Cyber Security Research Centre, Nanyang Technological University, Singapore 639798, Singapore.,School of Computer Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore.,CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, Singapore 637553, Singapore.,School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
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24
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Peng L, Han Y, Wang M, Cao X, Gao J, Liu Y, Chen X, Wang B, Wang B, Zhu C, Wang X, Cao K, Huang M, Cunning BV, Pang J, Xu W, Ying Y, Xu Z, Fang W, Lu Y, Ruoff RS, Gao C. Multifunctional Macroassembled Graphene Nanofilms with High Crystallinity. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2104195. [PMID: 34622487 DOI: 10.1002/adma.202104195] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/20/2021] [Revised: 08/01/2021] [Indexed: 06/13/2023]
Abstract
A "cooling-contraction" method to separate large-area (up to 4.2 cm in lateral size) graphene oxide (GO)-assembled films (of nanoscale thickness) from substrates is reported. Heat treatment at 3000 °C of such free-standing macroscale films yields highly crystalline "macroassembled graphene nanofilms" (nMAGs) with 16-48 nm thickness. These nMAGs present tensile strength of 5.5-11.3 GPa (with ≈3 µm gauge length), electrical conductivity of 1.8-2.1 MS m-1 , thermal conductivity of 2027-2820 W m-1 K-1 , and carrier relaxation time up to ≈23 ps. As a demonstration application, an nMAG-based sound-generator shows a 30 µs response and sound pressure level of 89 dB at 1 W cm-2 . A THz metasurface fabricated from nMAG has a light response of 8.2% for 0.159 W mm-2 and can detect down to 0.01 ppm of glucose. The approach provides a straightforward way to form highly crystallized graphene nanofilms from low-cost GO sheets.
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Affiliation(s)
- Li Peng
- MOE Key Laboratory of Macromolecular Synthesis and Functionalization, Department of Polymer Science and Engineering, Zhejiang University, 38 Zheda Road, Hangzhou, 310027, P. R. China
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
| | - Ying Han
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, P. R. China
| | - Meihui Wang
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Xiaoxue Cao
- MOE Key Laboratory of Macromolecular Synthesis and Functionalization, Department of Polymer Science and Engineering, Zhejiang University, 38 Zheda Road, Hangzhou, 310027, P. R. China
| | - Junfeng Gao
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian, 116024, P. R. China
| | - Yingjun Liu
- MOE Key Laboratory of Macromolecular Synthesis and Functionalization, Department of Polymer Science and Engineering, Zhejiang University, 38 Zheda Road, Hangzhou, 310027, P. R. China
| | - Xianjue Chen
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
| | - Bin Wang
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
| | - Bo Wang
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
| | - Chongyang Zhu
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
| | - Xiao Wang
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institutes of Advanced Technology, Chinese Academy of Science, Shenzhen, Guangdong, 518055, P. R. China
| | - Ke Cao
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, P. R. China
| | - Ming Huang
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
| | - Benjamin V Cunning
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
| | - Jintao Pang
- The State Key Laboratory of Fluid Power and Mechatronic Systems, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Wendao Xu
- College of Biosystems Engineering and Food Science, Zhejiang University, 866 Yuhangtang Road, Hangzhou, Zhejiang, 310058, P. R. China
| | - Yibin Ying
- College of Biosystems Engineering and Food Science, Zhejiang University, 866 Yuhangtang Road, Hangzhou, Zhejiang, 310058, P. R. China
| | - Zhen Xu
- MOE Key Laboratory of Macromolecular Synthesis and Functionalization, Department of Polymer Science and Engineering, Zhejiang University, 38 Zheda Road, Hangzhou, 310027, P. R. China
| | - Wenzhang Fang
- MOE Key Laboratory of Macromolecular Synthesis and Functionalization, Department of Polymer Science and Engineering, Zhejiang University, 38 Zheda Road, Hangzhou, 310027, P. R. China
| | - Yang Lu
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, P. R. China
| | - Rodney S Ruoff
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
- School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Chao Gao
- MOE Key Laboratory of Macromolecular Synthesis and Functionalization, Department of Polymer Science and Engineering, Zhejiang University, 38 Zheda Road, Hangzhou, 310027, P. R. China
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25
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Han Z, Li L, Jiao F, Yu G, Wei Z, Geng D, Hu W. Continuous orientated growth of scaled single-crystal 2D monolayer films. NANOSCALE ADVANCES 2021; 3:6545-6567. [PMID: 36132651 PMCID: PMC9418785 DOI: 10.1039/d1na00545f] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/09/2021] [Accepted: 10/03/2021] [Indexed: 06/16/2023]
Abstract
Single-crystal 2D materials have attracted a boom of scientific and technological activities. Recently, chemical vapor deposition (CVD) shows great promise for the synthesis of high-quality 2D materials owing to high controllability, high scalability and ultra-low cost. Two types of strategies have been developed: one is single-seed method, which focuses on the ultimate control of the density of nucleation into only one nucleus and the other is a multi-seed approach, which concentrates on the precise engineering of orientation of nuclei into a uniform alignment. Currently, the latter is recognized as a more effective method to meet the demand of industrial production, whereas the oriented domains can seamlessly merge into a continuous single-crystal film in a short time. In this review, we present the detailed cases of growing the representative monocrystalline 2D materials via the single-seed CVD method as well as show its advantages and disadvantages in shaping 2D materials. Then, other typical 2D materials (including graphene, h-BN, and TMDs) are given in terms of the unique feature under the guideline of the multi-seed growth approach. Furthermore, the growth mechanism for the 2D single crystals is presented and the following application in electronics, optics and antioxidation coatings are also discussed. Finally, we outline the current challenges, and a bright development in the future of the continuous orientated growth of scaled 2D crystals should be envisioned.
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Affiliation(s)
- Ziyi Han
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering Tianjin 300072 P. R. China
| | - Lin Li
- Institute of Molecular Plus Tianjin 300072 P. R. China
| | - Fei Jiao
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering Tianjin 300072 P. R. China
| | - Gui Yu
- Beijing National Laboratory for Molecular Sciences, Organic Solid Laboratory, Institute of Chemistry, Chinese Academy of Sciences Beijing 100190 P. R. China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences Beijing 100083 China
| | - Dechao Geng
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering Tianjin 300072 P. R. China
| | - Wenping Hu
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering Tianjin 300072 P. R. China
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26
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Zhang HZ, Wu WJ, Zhou L, Wu Z, Zhu J. Steering on Degrees of Freedom of 2D Van der Waals Heterostructures. SMALL SCIENCE 2021. [DOI: 10.1002/smsc.202100033] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/27/2022] Open
Affiliation(s)
- Hui-Zhen Zhang
- National Laboratory of Solid State Microstructures College of Engineering and Applied Sciences School of Physics Key Laboratory of Intelligent Optical Sensing and Manipulation Ministry of Education Jiangsu Key Laboratory of Artificial Functional Materials Nanjing University Nanjing 210093 P. R. China
| | - Wen-Jing Wu
- Department of Electrical Engineering The Pennsylvania State University University Park Pennsylvania 16802 USA
| | - Lin Zhou
- National Laboratory of Solid State Microstructures College of Engineering and Applied Sciences School of Physics Key Laboratory of Intelligent Optical Sensing and Manipulation Ministry of Education Jiangsu Key Laboratory of Artificial Functional Materials Nanjing University Nanjing 210093 P. R. China
| | - Zhen Wu
- National Laboratory of Solid State Microstructures College of Engineering and Applied Sciences School of Physics Key Laboratory of Intelligent Optical Sensing and Manipulation Ministry of Education Jiangsu Key Laboratory of Artificial Functional Materials Nanjing University Nanjing 210093 P. R. China
| | - Jia Zhu
- National Laboratory of Solid State Microstructures College of Engineering and Applied Sciences School of Physics Key Laboratory of Intelligent Optical Sensing and Manipulation Ministry of Education Jiangsu Key Laboratory of Artificial Functional Materials Nanjing University Nanjing 210093 P. R. China
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27
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Yang K, Liu J, Jiang R, Gong Y, Zeng B, Yi Z, Gao Q, Yang J, Chi F, Liu L. Synthesis of Single-Crystal Graphene on Copper Foils Using a Low-Nucleation-Density Region in a Quartz Boat. MICROMACHINES 2021; 12:1236. [PMID: 34683288 PMCID: PMC8539397 DOI: 10.3390/mi12101236] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/02/2021] [Revised: 10/01/2021] [Accepted: 10/05/2021] [Indexed: 11/26/2022]
Abstract
The nucleation of graphene at different locations in the quartz boat was studied, and the lowest nucleation density of graphene in the quartz boat was found. The nucleation density of graphene is the lowest at the bottom of the quartz boat near the gas inlet side. Based on the above results, a simple and reproducible way is proposed to significantly suppress the nucleation density of graphene on the copper foil during the chemical vapor deposition process. Placing the copper foil with an area of 1.3 cm × 1 cm in the middle of the bottom of the quartz boat or further back, and placing two copper pockets in front of the copper foil, an ultra-low nucleation density of ~42 nucleus/cm2 was achieved on the back of the copper foil. Single-crystal monolayer graphene with a lateral size of 800 μm can be grown on the back of copper foils after 60 min of growth. Raman spectroscopy revealed the single-crystal graphene to be in uniform monolayers with a low D-band intensity.
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Affiliation(s)
- Kaiqiang Yang
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China; (K.Y.); (J.L.); (R.J.); (Y.G.)
- Zhongshan Branch of State Key Laboratory of Electronic Thin Films and Integrated Devices, Zhongshan Institute, University of Electronic Science and Technology of China, Zhongshan 528402, China; (Z.Y.); (Q.G.); (J.Y.); (F.C.)
| | - Jianlong Liu
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China; (K.Y.); (J.L.); (R.J.); (Y.G.)
| | - Ruirui Jiang
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China; (K.Y.); (J.L.); (R.J.); (Y.G.)
| | - Yubin Gong
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China; (K.Y.); (J.L.); (R.J.); (Y.G.)
| | - Baoqing Zeng
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China; (K.Y.); (J.L.); (R.J.); (Y.G.)
| | - Zichuan Yi
- Zhongshan Branch of State Key Laboratory of Electronic Thin Films and Integrated Devices, Zhongshan Institute, University of Electronic Science and Technology of China, Zhongshan 528402, China; (Z.Y.); (Q.G.); (J.Y.); (F.C.)
| | - Qingguo Gao
- Zhongshan Branch of State Key Laboratory of Electronic Thin Films and Integrated Devices, Zhongshan Institute, University of Electronic Science and Technology of China, Zhongshan 528402, China; (Z.Y.); (Q.G.); (J.Y.); (F.C.)
| | - Jianjun Yang
- Zhongshan Branch of State Key Laboratory of Electronic Thin Films and Integrated Devices, Zhongshan Institute, University of Electronic Science and Technology of China, Zhongshan 528402, China; (Z.Y.); (Q.G.); (J.Y.); (F.C.)
| | - Feng Chi
- Zhongshan Branch of State Key Laboratory of Electronic Thin Films and Integrated Devices, Zhongshan Institute, University of Electronic Science and Technology of China, Zhongshan 528402, China; (Z.Y.); (Q.G.); (J.Y.); (F.C.)
| | - Liming Liu
- Zhongshan Branch of State Key Laboratory of Electronic Thin Films and Integrated Devices, Zhongshan Institute, University of Electronic Science and Technology of China, Zhongshan 528402, China; (Z.Y.); (Q.G.); (J.Y.); (F.C.)
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28
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Wang L, Ding Y, Wang X, Lai R, Zeng M, Fu L. In Situ Investigation of the Motion Behavior of Graphene on Liquid Copper. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:e2100334. [PMID: 34240577 PMCID: PMC8425870 DOI: 10.1002/advs.202100334] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/26/2021] [Revised: 04/22/2021] [Indexed: 06/13/2023]
Abstract
The in situ investigation of the dynamic growth process and novel assembly phenomena of graphene on liquid copper (Cu) is of great significance to deeply understand the special behavior of graphene and self-assembly mechanism. Here, the direct observation of the graphene growth and motion behavior on liquid Cu via in situ imaging is reported. Evidence of graphene movement on liquid Cu is offered and it is demonstrated that the translation and rotation behaviors of graphene are affected by the surface condition of liquid Cu. The self-assembly process of graphene array is also revealed by capturing the dynamic changes of graphene in real-time. Further analysis highlights the importance of surface energy of liquid Cu and the interaction between graphene building blocks during the self-assembling process. The growth parameters are also investigated to flexibly control the assembly configuration of graphene arrays. This work provides an insight into the mechanism of graphene motion and assembly behavior that can be used to guide the controllable manipulation of 2D materials and on-demand fabrication assembly structures with desired properties.
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Affiliation(s)
- Luyang Wang
- College of Chemistry and Molecular SciencesWuhan UniversityWuhan430072China
| | - Yu Ding
- College of Chemistry and Molecular SciencesWuhan UniversityWuhan430072China
| | - Xiaozheng Wang
- College of Chemistry and Molecular SciencesWuhan UniversityWuhan430072China
| | - Runze Lai
- College of Chemistry and Molecular SciencesWuhan UniversityWuhan430072China
| | - Mengqi Zeng
- College of Chemistry and Molecular SciencesWuhan UniversityWuhan430072China
| | - Lei Fu
- College of Chemistry and Molecular SciencesWuhan UniversityWuhan430072China
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Leidinger P, Kraus J, Günther S. Predicting Graphene Growth on Cu: Universal Kinetic Growth Model and Its Experimental Verification. ACS NANO 2021; 15:12201-12212. [PMID: 34264051 DOI: 10.1021/acsnano.1c03809] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The kinetics of the chemical vapor deposition (CVD) of graphene on Cu in CH4 + H2 were investigated by monitoring the graphene flake size as a function of CVD growth time. A growth model was set up which relates the CVD parameters to the mass action constant Qexp of the methane decomposition reaction toward graphene at a given temperature T. Graphene growth was shown to proceed from pre-equilibrated adsorbed carbon (Cad) within a wide CVD parameter range. The model not only leads to the correct scaling relation of the growth kinetics but quantitatively determines how far the CVD parameters deviate from thermal equilibrium and correctly predicts the absolute flake size increase per time. Fitting experimental data delivers the energy barrier for carbon detachment from the graphene island edge (Edet = 4.7 ± 0.3 eV) and the methane decomposition entropy toward Cad on Cu (ΔdecS° = 260 ± 20 J mol-1 K-1). The latter value is used to estimate the vanishingly small Cad equilibrium concentration of 3 × 10-10 monolayers at 1045 °C. The universal validity of the model is proven by comparison with literature data providing the correct order of magnitude growth velocities up to 1000 μm/h. The performed reactor experiments deliver data that match the predicted flake growth velocity with a precision of about 50%. The obtained results can be used to calibrate any hot wall CVD reactor setup for the methane decomposition reaction toward graphene on Cu. The description can be directly applied for any hydrocarbon in the gas feed, and the technique can be easily applied for other catalytic support surfaces.
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Affiliation(s)
- Paul Leidinger
- Technical University of Munich (TUM), Chemie Department-Physikalische Chemie mit Schwerpunkt Katalyse, Lichtenbergstraße 4, 85748 Garching, Germany
- Catalysis Research Center, Ernst-Otto-Fischer-Straße 1, 85748 Garching, Germany
| | - Jürgen Kraus
- Technical University of Munich (TUM), Chemie Department-Physikalische Chemie mit Schwerpunkt Katalyse, Lichtenbergstraße 4, 85748 Garching, Germany
| | - Sebastian Günther
- Technical University of Munich (TUM), Chemie Department-Physikalische Chemie mit Schwerpunkt Katalyse, Lichtenbergstraße 4, 85748 Garching, Germany
- Catalysis Research Center, Ernst-Otto-Fischer-Straße 1, 85748 Garching, Germany
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30
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Zheng J, Miao T, Xu R, Ping X, Wu Y, Lu Z, Zhang Z, Hu D, Liu L, Zhang Q, Li D, Cheng Z, Ma W, Xie L, Jiao L. Chemical Synthesis and Integration of Highly Conductive PdTe 2 with Low-Dimensional Semiconductors for p-Type Transistors with Low Contact Barriers. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2101150. [PMID: 34057254 DOI: 10.1002/adma.202101150] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/09/2021] [Revised: 03/19/2021] [Indexed: 06/12/2023]
Abstract
Low-dimensional semiconductors provide promising ultrathin channels for constructing more-than-Moore devices. However, the prominent contact barriers at the semiconductor-metal electrodes interfaces greatly limit the performance of the obtained devices. Here, a chemical approach is developed for the construction of p-type field-effect transistors (FETs) with low contact barriers by achieving the simultaneous synthesis and integration of 2D PdTe2 with various low-dimensional semiconductors. The 2D PdTe2 synthesized through a quasi-liquid process exhibits high electrical conductivity (≈4.3 × 106 S m-1 ) and thermal conductivity (≈130 W m-1 K-1 ), superior to other transition metal dichalcogenides (TMDCs) and even higher than some metals. In addition, PdTe2 electrodes with desired geometry can be synthesized directly on 2D MoTe2 and other semiconductors to form high-performance p-type FETs without any further treatment. The chemically derived atomically ordered PdTe2 -MoTe2 interface results in significantly reduced contact barrier (65 vs 240 meV) and thus increases the performance of the obtained devices. This work demonstrates the great potential of 2D PdTe2 as contact materials and also opens up a new avenue for the future device fabrication through the chemical construction and integration of 2D components.
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Affiliation(s)
- Jingying Zheng
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing, 100084, China
- College of Materials Science and Engineering, Fuzhou University, Fujian, 350108, China
| | - Tingting Miao
- Beijing Key Laboratory of Process Fluid Filtration and Separation, College of Mechanical and Transportation Engineering, China University of Petroleum-Beijing, Beijing, 102249, China
| | - Rui Xu
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Renmin University of China, Beijing, 100872, China
| | - Xiaofan Ping
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing, 100084, China
| | - Yueyang Wu
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing, 100084, China
| | - Zhixing Lu
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing, 100084, China
| | - Ziming Zhang
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing, 100084, China
- Institute of Optical Crystalline Materials, College of Chemistry, Fuzhou University, Fuzhou, 350108, China
| | - Dake Hu
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing, 100084, China
| | - Lina Liu
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing, 100084, China
| | - Qi Zhang
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing, 100084, China
| | - Dawei Li
- Beijing Key Laboratory of Process Fluid Filtration and Separation, College of Mechanical and Transportation Engineering, China University of Petroleum-Beijing, Beijing, 102249, China
| | - Zhihai Cheng
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Renmin University of China, Beijing, 100872, China
| | - Weigang Ma
- Key Laboratory for Thermal Science and Power Engineering of Ministry of Education, Department of Engineering Mechanics, Tsinghua University, Beijing, 100084, China
| | - Liming Xie
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Liying Jiao
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing, 100084, China
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31
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Sun L, Wang Z, Wang Y, Zhao L, Li Y, Chen B, Huang S, Zhang S, Wang W, Pei D, Fang H, Zhong S, Liu H, Zhang J, Tong L, Chen Y, Li Z, Rümmeli MH, Novoselov KS, Peng H, Lin L, Liu Z. Hetero-site nucleation for growing twisted bilayer graphene with a wide range of twist angles. Nat Commun 2021; 12:2391. [PMID: 33888688 PMCID: PMC8062483 DOI: 10.1038/s41467-021-22533-1] [Citation(s) in RCA: 45] [Impact Index Per Article: 15.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/26/2020] [Accepted: 03/17/2021] [Indexed: 11/09/2022] Open
Abstract
Twisted bilayer graphene (tBLG) has recently attracted growing interest due to its unique twist-angle-dependent electronic properties. The preparation of high-quality large-area bilayer graphene with rich rotation angles would be important for the investigation of angle-dependent physics and applications, which, however, is still challenging. Here, we demonstrate a chemical vapor deposition (CVD) approach for growing high-quality tBLG using a hetero-site nucleation strategy, which enables the nucleation of the second layer at a different site from that of the first layer. The fraction of tBLGs in bilayer graphene domains with twist angles ranging from 0° to 30° was found to be improved to 88%, which is significantly higher than those reported previously. The hetero-site nucleation behavior was carefully investigated using an isotope-labeling technique. Furthermore, the clear Moiré patterns and ultrahigh room-temperature carrier mobility of 68,000 cm2 V-1 s-1 confirmed the high crystalline quality of our tBLG. Our study opens an avenue for the controllable growth of tBLGs for both fundamental research and practical applications.
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Affiliation(s)
- Luzhao Sun
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, People's Republic of China.,Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, People's Republic of China.,Beijing Graphene Institute, Beijing, 100095, People's Republic of China
| | - Zihao Wang
- School of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, UK
| | - Yuechen Wang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, People's Republic of China.,Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, People's Republic of China
| | - Liang Zhao
- Soochow Institute for Energy and Materials Innovation, Soochow University, Suzhou, 215006, People's Republic of China
| | - Yanglizhi Li
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, People's Republic of China.,Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, People's Republic of China.,Beijing Graphene Institute, Beijing, 100095, People's Republic of China
| | - Buhang Chen
- Beijing Graphene Institute, Beijing, 100095, People's Republic of China
| | - Shenghong Huang
- Department of Modern Mechanics, University of Science and Technology of China, Hefei, 230026, People's Republic of China.
| | - Shishu Zhang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, People's Republic of China
| | - Wendong Wang
- School of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, UK
| | - Ding Pei
- Clarendon Laboratory, Department of Physics, University of Oxford, Oxford, OX1 3PU, UK
| | - Hongwei Fang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, People's Republic of China
| | - Shan Zhong
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, People's Republic of China
| | - Haiyang Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, People's Republic of China
| | - Jincan Zhang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, People's Republic of China.,Beijing Graphene Institute, Beijing, 100095, People's Republic of China
| | - Lianming Tong
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, People's Republic of China
| | - Yulin Chen
- Clarendon Laboratory, Department of Physics, University of Oxford, Oxford, OX1 3PU, UK.,School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, People's Republic of China
| | - Zhenyu Li
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, 230026, People's Republic of China
| | - Mark H Rümmeli
- Soochow Institute for Energy and Materials Innovation, Soochow University, Suzhou, 215006, People's Republic of China
| | - Kostya S Novoselov
- School of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, UK
| | - Hailin Peng
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, People's Republic of China. .,Beijing Graphene Institute, Beijing, 100095, People's Republic of China.
| | - Li Lin
- School of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, UK.
| | - Zhongfan Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, People's Republic of China. .,Beijing Graphene Institute, Beijing, 100095, People's Republic of China.
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32
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Cai L, Yu G. Fabrication Strategies of Twisted Bilayer Graphenes and Their Unique Properties. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2004974. [PMID: 33615593 DOI: 10.1002/adma.202004974] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/21/2020] [Revised: 10/09/2020] [Indexed: 06/12/2023]
Abstract
Twisted bilayer graphene (tBLG) exhibits a host of innovative physical phenomena owing to the formation of moiré superlattice. Especially, the discovery of superconducting behavior has generated new interest in graphene. The growing studies of tBLG mainly focus on its physical properties, while the fabrication of high-quality tBLG is a prerequisite for achieving the desired properties due to the great dependence on the twist angle and the interfacial contact. Here, the cutting-edge preparation strategies and challenges of tBLG fabrication are reviewed. The advantages and disadvantages of chemical vapor deposition, epitaxial growth on silicon carbide, stacking monolayer graphene, and folding monolayer graphene methods for the fabrication of tBLG are analyzed in detail, providing a reference for further development of preparation methods. Moreover, the characterization methods of twist angle for the tBLG are presented. Then, the unique physicochemical properties and corresponding applications of tBLG, containing correlated insulating and superconducting states, ferromagnetic state, soliton, enhanced optical absorption, tunable bandgap, and lithium intercalation and diffusion, are described. Finally, the opportunities and challenges for fabricating high-quality and large-area tBLG are discussed, unique physical properties are displayed, and new applications inferred from its angle-dependent features are explored, thereby impelling the commercialization of tBLG from laboratory to market.
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Affiliation(s)
- Le Cai
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Gui Yu
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
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33
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Liu J, Zhang X, Zhang S, Zou Z, Zhang Z, Wu Z, Xia Y, Li Q, Zhao P, Wang H. Sequential growth and twisted stacking of chemical-vapor-deposited graphene. NANOSCALE ADVANCES 2021; 3:983-990. [PMID: 36133285 PMCID: PMC9418772 DOI: 10.1039/d0na00982b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/24/2020] [Accepted: 12/26/2020] [Indexed: 06/16/2023]
Abstract
Adlayers have been one of the main concerns for controlled synthesis of graphene by the chemical vapor deposition (CVD) method. Here we investigate the CVD growth of graphene adlayers on copper (Cu) using isotope-labeling-based Raman spectroscopy and high-resolution atomic force microscopy (AFM). The results show that, besides conventional simultaneous growth for all the graphene layers, approximately 37% of the adlayers follow a sequential growth which can occur even hours after the nucleation of the first layer. The proportions of AB (Bernal)- and twisted (t)-stacked bilayer graphene (BLG) stacks formed by the two modes are not significantly different. Moreover, in those stacks with both AB- and t-BLG, evidence at the atomic scale demonstrates that they resulted from misoriented domains in their single-crystal-like top layers. We believe that this new understanding of the growth mechanism for graphene adlayers can help pave the way towards the synthesis of large-scale and high-quality graphene with controllable layer numbers.
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Affiliation(s)
- Jinglan Liu
- Center for X-Mechanics, Institute of Applied Mechanics, Zhejiang University Hangzhou 310012 China
| | - Xuewei Zhang
- Center for X-Mechanics, Institute of Applied Mechanics, Zhejiang University Hangzhou 310012 China
| | - Shuai Zhang
- Applied Mechanics Laboratory, Department of Engineering Mechanics, Tsinghua University 100084 Beijing China
| | - Zhenxing Zou
- Center for X-Mechanics, Institute of Applied Mechanics, Zhejiang University Hangzhou 310012 China
| | - Zilong Zhang
- Center for X-Mechanics, Institute of Applied Mechanics, Zhejiang University Hangzhou 310012 China
| | - Zehao Wu
- Center for X-Mechanics, Institute of Applied Mechanics, Zhejiang University Hangzhou 310012 China
| | - Yang Xia
- Institute of Microelectronics, Chinese Academy of Sciences Beijing 100029 China
| | - Qunyang Li
- Applied Mechanics Laboratory, Department of Engineering Mechanics, Tsinghua University 100084 Beijing China
| | - Pei Zhao
- Center for X-Mechanics, Institute of Applied Mechanics, Zhejiang University Hangzhou 310012 China
| | - Hongtao Wang
- Center for X-Mechanics, Institute of Applied Mechanics, Zhejiang University Hangzhou 310012 China
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34
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Meng L, Lu J, Bai Y, Liu L, Tang J, Zhang X. Graphene adlayer growth between nonepitaxial graphene and the Ni(111) substrate: a theoretical study. Phys Chem Chem Phys 2021; 23:2222-2228. [PMID: 33439169 DOI: 10.1039/d0cp04667a] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/22/2022]
Abstract
Understanding the fundamentals of chemical vapor deposition bilayer graphene growth is crucial for its synthesis. By employing density functional theory calculations and classical molecular dynamics simulations, we have investigated the evolution of carbon structures and the kinetics of the adlayer graphene nucleation between the graphene top layer (GTL) and the Ni(111) substrate. Compared to the epitaxial GTL, the weaker interaction between the nonepitaxial GTL and the Ni(111) substrate makes the nucleation of the adlayer more favorable. Furthermore, the defects involving in the adlayer graphene are easier to be healed by adopting the nonepitaxial GTL. Our results agree well with the experimental observation and demonstrate that the adlayer graphene with a high quality can be grown underneath the nonepitaxial GTL on Ni-like substrates.
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Affiliation(s)
- Lijuan Meng
- Department of Physics, Yancheng Institute of Technology, Yancheng, Jiangsu 224051, China
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35
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Zhao Z, Hou T, Wu N, Jiao S, Zhou K, Yin J, Suk JW, Cui X, Zhang M, Li S, Qu Y, Xie W, Li XB, Zhao C, Fu Y, Hong RD, Guo S, Lin D, Cai W, Mai W, Luo Z, Tian Y, Lai Y, Liu Y, Colombo L, Hao Y. Polycrystalline Few-Layer Graphene as a Durable Anticorrosion Film for Copper. NANO LETTERS 2021; 21:1161-1168. [PMID: 33411539 DOI: 10.1021/acs.nanolett.0c04724] [Citation(s) in RCA: 19] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Corrosion of metals in atmospheric environments is a worldwide problem in industry and daily life. Traditional anticorrosion methods including sacrificial anodes or protective coatings have performance limitations. Here, we report atomically thin, polycrystalline few-layer graphene (FLG) grown by chemical vapor deposition as a long-term protective coating film for copper (Cu). A six-year old, FLG-protected Cu is visually shiny and detailed material characterizations capture no sign of oxidation. The success of the durable anticorrosion film depends on the misalignment of grain boundaries between adjacent graphene layers. Theoretical calculations further found that corrosive molecules always encounter extremely high energy barrier when diffusing through the FLG layers. Therefore, the FLG is able to prevent the corrosive molecules from reaching the underlying Cu surface. This work highlights the interesting structures of polycrystalline FLG and sheds insight into the atomically thin coatings for various applications.
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Affiliation(s)
- Zhijuan Zhao
- Siyuan Laboratory, Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, Guangdong 510632, China
| | - Tianyu Hou
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, China
| | - Nannan Wu
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, China
| | - Shuping Jiao
- Shanghai Key Laboratory of Mechanics in Energy Engineering, Shanghai Institute of Applied Mathematics and Mechanics, School of Mechanics, and Engineering Science, Shanghai University, Shanghai, 200444, China
| | - Ke Zhou
- State Key Laboratory for Strength and Vibration of Mechanical Structures, School of Aerospace Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Jun Yin
- State Key Laboratory of Mechanics and Control of Mechanical Structures and MOE Key Laboratory for Intelligent Nano Materials and Devices, College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
| | - Ji Won Suk
- School of Mechanical Engineering and SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, Gyeonggi-do 16419, Republic of Korea
| | - Xu Cui
- AutoX Technologies Inc., San Jose, California 95131, United States
| | - Mingfei Zhang
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, China
| | - Shaopeng Li
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, China
| | - Yan Qu
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, China
- The Sixth Element Materials Technology Co., Ltd., Changzhou 213000, China
| | - Weiguang Xie
- Siyuan Laboratory, Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, Guangdong 510632, China
| | - Xi-Bo Li
- Siyuan Laboratory, Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, Guangdong 510632, China
| | - Chuanxi Zhao
- Siyuan Laboratory, Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, Guangdong 510632, China
| | - Yong Fu
- Siyuan Laboratory, Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, Guangdong 510632, China
| | - Rong-Dun Hong
- Department of Physics and State Key Laboratory of Physical Chemistry of Solid Surfaces, Xiamen University, Xiamen, Fujian 361005, China
| | - Shengshi Guo
- Department of Physics and State Key Laboratory of Physical Chemistry of Solid Surfaces, Xiamen University, Xiamen, Fujian 361005, China
| | - Dingqu Lin
- Department of Physics and State Key Laboratory of Physical Chemistry of Solid Surfaces, Xiamen University, Xiamen, Fujian 361005, China
| | - Weiwei Cai
- Department of Physics and State Key Laboratory of Physical Chemistry of Solid Surfaces, Xiamen University, Xiamen, Fujian 361005, China
| | - Wenjie Mai
- Siyuan Laboratory, Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, Guangdong 510632, China
| | - Zhengtang Luo
- Department of Chemical and Biological Engineering, William Mong Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, China
| | - Yongtao Tian
- School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, Henan 450001, China
| | - Yun Lai
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, China
| | - Yuanyue Liu
- Texas Materials Institute and Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712, United States
| | - Luigi Colombo
- Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States
| | - Yufeng Hao
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, China
- Haian Institute of New Technology, Nanjing University, Haian, 226600, China
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37
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Yang K, Liu J, Jiang R, Gong Y, Zeng B, Yi Z, Gao Q, Yang J, Chi F, Liu L. Effect of the Pressure of Reaction Gases on the Growth of Single-Crystal Graphene on the Inner Surfaces of Copper Pockets. MICROMACHINES 2020; 11:E1101. [PMID: 33327376 PMCID: PMC7764845 DOI: 10.3390/mi11121101] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/05/2020] [Revised: 11/29/2020] [Accepted: 12/08/2020] [Indexed: 11/22/2022]
Abstract
Single-crystal graphene has attracted much attention due to its excellent electrical properties in recent years, and many growth methods have been proposed, including the copper pockets method. In the copper pockets method, a piece of copper foil is folded into a pocket and put into a chemical vapor deposition (CVD) system for the growth of graphene. The dynamic balance of evaporation and deposition of copper on the inner surfaces of the copper pockets avoids high surface roughness caused by the evaporation of copper in open space, such as the outer surfaces of copper pockets. Much lower partial pressure of methane in the copper pockets and lower surface roughness reduce the nucleation density of graphene and increase the size of single-crystal graphene. It is found that the growth pressure is closely related to the size of single-crystal graphene prepared by the copper pockets method; the higher the growth pressure, the larger the size of single-crystal graphene. It is also found that the growth pressure has an effect on the inner surface roughness of the copper pockets, but the effect is not significant. The main factor affecting the size of the single-crystal graphene is the change in the volume of the copper pockets caused by the change in the growth pressure, and the volume of the copper pockets determines the content of methane in the copper pockets. According to the above law, the size of single-crystal graphene prepared by the copper pockets method can be enlarged by increasing the growth pressure. The size of single-crystal graphene can be enlarged in a wide range as the growth pressure can be increased in a wide range. In our experiments, when the growth pressure reached 450 Pa, single-crystal graphene with a diameter of 450 μm was prepared.
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Affiliation(s)
- Kaiqiang Yang
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China; (K.Y.); (J.L.); (R.J.); (Y.G.)
- Zhongshan Branch of State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan 528402, China; (Z.Y.); (Q.G.); (J.Y.); (F.C.)
| | - Jianlong Liu
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China; (K.Y.); (J.L.); (R.J.); (Y.G.)
| | - Ruirui Jiang
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China; (K.Y.); (J.L.); (R.J.); (Y.G.)
| | - Yubin Gong
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China; (K.Y.); (J.L.); (R.J.); (Y.G.)
| | - Baoqing Zeng
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China; (K.Y.); (J.L.); (R.J.); (Y.G.)
| | - Zichuan Yi
- Zhongshan Branch of State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan 528402, China; (Z.Y.); (Q.G.); (J.Y.); (F.C.)
| | - Qingguo Gao
- Zhongshan Branch of State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan 528402, China; (Z.Y.); (Q.G.); (J.Y.); (F.C.)
| | - Jianjun Yang
- Zhongshan Branch of State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan 528402, China; (Z.Y.); (Q.G.); (J.Y.); (F.C.)
| | - Feng Chi
- Zhongshan Branch of State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan 528402, China; (Z.Y.); (Q.G.); (J.Y.); (F.C.)
| | - Liming Liu
- Zhongshan Branch of State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan 528402, China; (Z.Y.); (Q.G.); (J.Y.); (F.C.)
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38
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Erohin SV, Ruan Q, Sorokin PB, Yakobson BI. Nano-Thermodynamics of Chemically Induced Graphene-Diamond Transformation. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e2004782. [PMID: 33107167 DOI: 10.1002/smll.202004782] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/06/2020] [Revised: 09/28/2020] [Indexed: 05/27/2023]
Abstract
Nearly 2D diamond, or diamane, is coveted as an ultrathin sp3 -carbon film with unique mechanics and electro-optics. The very thinness (≈h) makes it possible for the surface chemistry, for example, adsorbed atoms, to shift the bulk phase thermodynamics in favor of diamond, from multilayer graphene. Thermodynamic theory coupled with atomistic first principles computations predicts not only the reduction of required pressure (p/p∞ > 1 - h0 /h) but also the nucleation barriers, definitive for the kinetic feasibility of diamane formation. Moreover, the optimal adsorbent chair-pattern on a bilayer graphene results in a cubic diamond lattice, while for thicker precursors the adsorbent boat-structure tends to produce hexagonal diamond (lonsdaleite), if graphene is in AA' stacking to start with. As adsorbents, H and F are conducive to diamond formation, while Cl appears sterically hindered.
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Affiliation(s)
- Sergey V Erohin
- Department of Materials Science and NanoEngineering, and Department of Chemistry, Rice University, Houston, TX, 77005, USA
- National University of Science and Technology MISiS, Moscow, 119049, Russia
- Technological Institute for Superhard and Novel Carbon Materials, Troitsk, Moscow, 108840, Russia
| | - Qiyuan Ruan
- Department of Materials Science and NanoEngineering, and Department of Chemistry, Rice University, Houston, TX, 77005, USA
| | - Pavel B Sorokin
- National University of Science and Technology MISiS, Moscow, 119049, Russia
- Technological Institute for Superhard and Novel Carbon Materials, Troitsk, Moscow, 108840, Russia
| | - Boris I Yakobson
- Department of Materials Science and NanoEngineering, and Department of Chemistry, Rice University, Houston, TX, 77005, USA
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39
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Burton OJ, Massabuau FCP, Veigang-Radulescu VP, Brennan B, Pollard AJ, Hofmann S. Integrated Wafer Scale Growth of Single Crystal Metal Films and High Quality Graphene. ACS NANO 2020; 14:13593-13601. [PMID: 33001624 DOI: 10.1021/acsnano.0c05685] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
We report on an approach to bring together single crystal metal catalyst preparation and graphene growth in a combined process flow using a standard cold-wall chemical vapor deposition (CVD) reactor. We employ a sandwich arrangement between a commercial polycrystalline Cu foil and c-plane sapphire wafer and show that close-spaced vacuum sublimation across the confined gap can result in an epitaxial, single-crystal Cu(111) film at high growth rate. The arrangement is scalable (we demonstrate 2″ wafer scale) and suppresses reactor contamination with Cu. While starting with an impure Cu foil, the freshly prepared Cu film is of high purity as measured by time-of-flight secondary ion mass spectrometry. We seamlessly connect the initial metallization with subsequent graphene growth via the introduction of hydrogen and gaseous carbon precursors, thereby eliminating contamination due to substrate transfer and common lengthy catalyst pretreatments. We show that the sandwich approach also enables for a Cu surface with nanometer scale roughness during graphene growth and thus results in high quality graphene similar to previously demonstrated Cu enclosure approaches. We systematically explore the parameter space and discuss the opportunities, including subsequent dry transfer, generality, and versatility of our approach particularly regarding the cost-efficient preparation of different single crystal film orientations and expansion to other material systems.
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Affiliation(s)
- Oliver J Burton
- Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom
| | - Fabien C-P Massabuau
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
- Department of Physics, University of Strathclyde, 107 Rottenrow East, Glasgow G4 0NG, United Kingdom
| | - Vlad-Petru Veigang-Radulescu
- Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom
- National Physical Laboratory, Hampton Rd, Teddington, Middlesex TW11 0LW, United Kingdom
| | - Barry Brennan
- National Physical Laboratory, Hampton Rd, Teddington, Middlesex TW11 0LW, United Kingdom
| | - Andrew J Pollard
- National Physical Laboratory, Hampton Rd, Teddington, Middlesex TW11 0LW, United Kingdom
| | - Stephan Hofmann
- Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom
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40
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Moreno-López JC, Fedi F, Argentero G, Carini M, Chimborazo J, Meyer J, Pichler T, Mateo-Alonso A, Ayala P. Exclusive Substitutional Nitrogen Doping on Graphene Decoupled from an Insulating Substrate. THE JOURNAL OF PHYSICAL CHEMISTRY. C, NANOMATERIALS AND INTERFACES 2020; 124:22150-22157. [PMID: 33072238 PMCID: PMC7552092 DOI: 10.1021/acs.jpcc.0c06415] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/14/2020] [Revised: 08/31/2020] [Indexed: 06/01/2023]
Abstract
The on-surface synthesis of atomically flat N-doped graphene on oxidized copper is presented. Besides circumventing the almost standard use of metallic substrates for growth, this method allows producing graphene with ∼2.0 at % N in a substitutional configuration directly decoupled from the substrate. Angle-resolved photoemission shows a linear energy-momentum dispersion where the Dirac point lies at the Fermi level. Additionally, the N functional centers can be selectively tailored in sp2 substitutional configuration by making use of a purpose-made molecular precursor: dicyanopyrazophenanthroline (C16H6N6).
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Affiliation(s)
| | - Filippo Fedi
- Faculty
of Physics, University of Vienna, 1090 Wien, Austria
| | | | - Marco Carini
- POLYMAT,
University of the Basque Country UPV/EHU, Avenida de Tolosa 72, E-20018 Donostia-San Sebastian, Spain
| | | | - Jannik Meyer
- Faculty
of Physics, University of Vienna, 1090 Wien, Austria
| | - Thomas Pichler
- Faculty
of Physics, University of Vienna, 1090 Wien, Austria
| | - Aurelio Mateo-Alonso
- Faculty
of Physics, University of Vienna, 1090 Wien, Austria
- Ikerbasque,
Basque Foundation for Science, 48013 Bilbao, Spain
| | - Paola Ayala
- Faculty
of Physics, University of Vienna, 1090 Wien, Austria
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41
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Nguyen VL, Duong DL, Lee SH, Avila J, Han G, Kim YM, Asensio MC, Jeong SY, Lee YH. Layer-controlled single-crystalline graphene film with stacking order via Cu-Si alloy formation. NATURE NANOTECHNOLOGY 2020; 15:861-867. [PMID: 32719494 DOI: 10.1038/s41565-020-0743-0] [Citation(s) in RCA: 33] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/01/2019] [Accepted: 06/24/2020] [Indexed: 06/11/2023]
Abstract
Multilayer graphene and its stacking order provide both fundamentally intriguing properties and technological engineering applications. Several approaches to control the stacking order have been demonstrated, but a method of precisely controlling the number of layers with desired stacking sequences is still lacking. Here, we propose an approach for controlling the layer thickness and crystallographic stacking sequence of multilayer graphene films at the wafer scale via Cu-Si alloy formation using direct chemical vapour deposition. C atoms are introduced by tuning the ultra-low-limit CH4 concentration to form a SiC layer, reaching one to four graphene layers at the wafer scale after Si sublimation. The crystallographic structure of single-crystalline or uniformly oriented bilayer (AB), trilayer (ABA) and tetralayer (ABCA) graphene are determined via nano-angle-resolved photoemission spectroscopy, which agrees with theoretical calculations, Raman spectroscopy and transport measurements. The present study takes a step towards the layer-controlled growth of graphite and other two-dimensional materials.
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Affiliation(s)
- Van Luan Nguyen
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, Republic of Korea
- Inorganic Materials Laboratory, Samsung Advanced Institute of Technology, Samsung Electronics, Suwon, Korea
| | - Dinh Loc Duong
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, Republic of Korea
- Department of Energy Science, Department of Physics, Sungkyunkwan University, Suwon, Korea
| | - Sang Hyub Lee
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, Republic of Korea
- Department of Energy Science, Department of Physics, Sungkyunkwan University, Suwon, Korea
| | - José Avila
- Synchrotron SOLEIL, Université Paris-Saclay, L'Orme des Merisiers Saint-Aubin, Gif sur Yvette, France
| | - Gyeongtak Han
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, Republic of Korea
| | - Young-Min Kim
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, Republic of Korea
- Department of Energy Science, Department of Physics, Sungkyunkwan University, Suwon, Korea
| | - Maria C Asensio
- Materials Science Institute of Madrid (ICMM), Spanish Scientific Research Council (CSIC), Cantoblanco, Madrid, Spain.
- MATINÉE: CSIC Associated Unit (ICMM-ICMUV Valencia University), Cantoblanco, Madrid, Spain.
| | - Se-Young Jeong
- Department of Cogno-mechatronics Engineering, Department of Optics and Mechatronics Engineering, Pusan National University, Busan, Republic of Korea.
| | - Young Hee Lee
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, Republic of Korea.
- Department of Energy Science, Department of Physics, Sungkyunkwan University, Suwon, Korea.
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42
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Wan X, Li H, Chen K, Xu J. Towards Scalable Fabrications and Applications of 2D Layered Material-based Vertical and Lateral Heterostructures. Chem Res Chin Univ 2020. [DOI: 10.1007/s40242-020-0200-5] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
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43
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Huang Y, Pan YH, Yang R, Bao LH, Meng L, Luo HL, Cai YQ, Liu GD, Zhao WJ, Zhou Z, Wu LM, Zhu ZL, Huang M, Liu LW, Liu L, Cheng P, Wu KH, Tian SB, Gu CZ, Shi YG, Guo YF, Cheng ZG, Hu JP, Zhao L, Yang GH, Sutter E, Sutter P, Wang YL, Ji W, Zhou XJ, Gao HJ. Universal mechanical exfoliation of large-area 2D crystals. Nat Commun 2020; 11:2453. [PMID: 32415180 PMCID: PMC7228924 DOI: 10.1038/s41467-020-16266-w] [Citation(s) in RCA: 195] [Impact Index Per Article: 48.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/11/2020] [Accepted: 04/21/2020] [Indexed: 12/23/2022] Open
Abstract
Two-dimensional materials provide extraordinary opportunities for exploring phenomena arising in atomically thin crystals. Beginning with the first isolation of graphene, mechanical exfoliation has been a key to provide high-quality two-dimensional materials, but despite improvements it is still limited in yield, lateral size and contamination. Here we introduce a contamination-free, one-step and universal Au-assisted mechanical exfoliation method and demonstrate its effectiveness by isolating 40 types of single-crystalline monolayers, including elemental two-dimensional crystals, metal-dichalcogenides, magnets and superconductors. Most of them are of millimeter-size and high-quality, as shown by transfer-free measurements of electron microscopy, photo spectroscopies and electrical transport. Large suspended two-dimensional crystals and heterojunctions were also prepared with high-yield. Enhanced adhesion between the crystals and the substrates enables such efficient exfoliation, for which we identify a gold-assisted exfoliation method that underpins a universal route for producing large-area monolayers and thus supports studies of fundamental properties and potential application of two-dimensional materials.
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Affiliation(s)
- Yuan Huang
- Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- Songshan Lake Materials Laboratory, 523808, Dongguan, China
| | - Yu-Hao Pan
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Renmin University of China, 100872, Beijing, China
| | - Rong Yang
- Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- Songshan Lake Materials Laboratory, 523808, Dongguan, China
| | - Li-Hong Bao
- Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
| | - Lei Meng
- Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
| | - Hai-Lan Luo
- Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
| | - Yong-Qing Cai
- Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
| | - Guo-Dong Liu
- Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
| | - Wen-Juan Zhao
- Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
| | - Zhang Zhou
- Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
| | - Liang-Mei Wu
- Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
| | - Zhi-Li Zhu
- Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
| | - Ming Huang
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Li-Wei Liu
- School of Information and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, 100081, Beijing, China
| | - Lei Liu
- College of Engineering, Peking University, 100871, Beijing, China
| | - Peng Cheng
- Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
| | - Ke-Hui Wu
- Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
| | - Shi-Bing Tian
- Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
| | - Chang-Zhi Gu
- Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
| | - You-Guo Shi
- Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
| | - Yan-Feng Guo
- School of Physical Science and Technology, Shanghai Tech University, 201210, Shanghai, China
| | - Zhi Gang Cheng
- Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- Songshan Lake Materials Laboratory, 523808, Dongguan, China
- University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Jiang-Ping Hu
- Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- Songshan Lake Materials Laboratory, 523808, Dongguan, China
- University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Lin Zhao
- Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- Songshan Lake Materials Laboratory, 523808, Dongguan, China
- University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Guan-Hua Yang
- Institute of Microelectronics of Chinese Academy of Sciences, 100029, Beijing, China
| | - Eli Sutter
- Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, NE, 68588, United States
| | - Peter Sutter
- Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, Lincoln, NE, 68588, United States.
| | - Ye-Liang Wang
- Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Information and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, 100081, Beijing, China
| | - Wei Ji
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Renmin University of China, 100872, Beijing, China.
| | - Xing-Jiang Zhou
- Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China.
- Songshan Lake Materials Laboratory, 523808, Dongguan, China.
- University of Chinese Academy of Sciences, 100049, Beijing, China.
| | - Hong-Jun Gao
- Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China.
- University of Chinese Academy of Sciences, 100049, Beijing, China.
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44
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Liu YW, Hou Z, Li SY, Sun QF, He L. Movable Valley Switch Driven by Berry Phase in Bilayer-Graphene Resonators. PHYSICAL REVIEW LETTERS 2020; 124:166801. [PMID: 32383950 DOI: 10.1103/physrevlett.124.166801] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/09/2019] [Revised: 01/14/2020] [Accepted: 04/03/2020] [Indexed: 06/11/2023]
Abstract
Berry phase, the geometric phase accumulated over a closed loop in parameter space during an adiabatic cyclic evolution, has been demonstrated to play an important role in many quantum systems since its discovery. In gapped Bernal bilayer graphene, the Berry phase can be continuously tuned from zero to 2π, which offers a unique opportunity to explore the tunable Berry phase on physical phenomena. Here, we report experimental observation of Berry-phase-induced valley splitting and crossing in movable bilayer-graphene p-n junction resonators. In our experiment, the resonators are generated by combining the electric field of a scanning tunneling microscope tip with the gap of bilayer graphene. A perpendicular magnetic field changes the Berry phase of the confined bound states in the resonators from zero to 2π continuously and leads to the Berry phase difference for the two inequivalent valleys in the bilayer graphene. As a consequence, we observe giant valley splitting and unusual valley crossing of the lowest bound states. Our results indicate that the bilayer-graphene resonators can be used to manipulate the valley degree of freedom in valleytronics.
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Affiliation(s)
- Yi-Wen Liu
- Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Zhe Hou
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Si-Yu Li
- Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing 100875, People's Republic of China
| | - Qing-Feng Sun
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
- Beijing Academy of Quantum Information Sciences, West Boulevard No. 3, No. 10 Xibeiwang East Road, Haidian District, Beijing 100193, China
| | - Lin He
- Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing 100875, People's Republic of China
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, People's Republic of China
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45
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Zhu T, Liang Y, Zhang C, Wang Z, Dong M, Wang C, Yang M, Goto T, Tu R, Zhang S. A high-throughput synthesis of large-sized single-crystal hexagonal boron nitride on a Cu-Ni gradient enclosure. RSC Adv 2020; 10:16088-16093. [PMID: 35493669 PMCID: PMC9052805 DOI: 10.1039/d0ra00734j] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/23/2020] [Accepted: 04/01/2020] [Indexed: 11/21/2022] Open
Abstract
Large monolayer two-dimensional h-BN can be employed in novel electronic devices because of its thin insulation, excellent thermal stability, and high mechanical strength. However, the efficient synthesis of an h-BN film with large lateral size still faces a great challenge. Here, we report a method for the high-throughput synthesis of large-sized single-crystal h-BN on a Cu-Ni gradient alloy enclosure as the substrate via a low-pressure chemical vapor deposition (LPCVD) method. By depositing Ni on the Cu foil in different concentrations to obtain a Cu-Ni in-plane gradient concentration alloy enclosure, the highest growth rate of h-BN was 1 μm min-1 with the lateral size of h-BN being higher than 60 μm. Furthermore, the effect of the Ni content on the single crystal h-BN grain size and nucleation density and the mechanisms for the growth of h-BN were also investigated.
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Affiliation(s)
- Tianyu Zhu
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology 122 Luoshi Road Wuhan 430070 People's Republic of China
| | - Yao Liang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology 122 Luoshi Road Wuhan 430070 People's Republic of China
| | - Chitengfei Zhang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology 122 Luoshi Road Wuhan 430070 People's Republic of China
| | - Zegao Wang
- Interdisciplinary Nanoscience Center (iNANO), Aarhus University DK-8000 Aarhus Denmark
| | - Mingdong Dong
- Interdisciplinary Nanoscience Center (iNANO), Aarhus University DK-8000 Aarhus Denmark
| | - Chuanbin Wang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology 122 Luoshi Road Wuhan 430070 People's Republic of China
| | - Meijun Yang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology 122 Luoshi Road Wuhan 430070 People's Republic of China
| | - Takashi Goto
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology 122 Luoshi Road Wuhan 430070 People's Republic of China
| | - Rong Tu
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology 122 Luoshi Road Wuhan 430070 People's Republic of China
| | - Song Zhang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology 122 Luoshi Road Wuhan 430070 People's Republic of China
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46
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Artificial Intelligence Algorithm Enabled Industrial-Scale Graphene Characterization. CRYSTALS 2020. [DOI: 10.3390/cryst10040308] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
No characterization method is available to quickly perform quality inspection of 2D materials produced on an industrial scale. This hinders the adoption of 2D materials for product manufacturing in many industries. Here, we report an artificial-intelligence-assisted Raman analysis to quickly probe the quality of centimeter-large graphene samples in a non-destructive manner. Chemical vapor deposition of graphene is devised in this work such that two types of samples were obtained: layer-plus-islands and layer-by-layer graphene films, at centimeter scales. Using these samples, we implemented and integrated an unsupervised learning algorithm with an automated Raman spectroscopy to precisely cluster 20,250 and 18,000 Raman spectra collected from layer-plus-islands and layer-by-layer graphene films, respectively, into five and two clusters. Each cluster represents graphene patches with different layer numbers and stacking orders. For instance, the two clusters detected in layer-by-layer graphene films represent monolayer and bilayer graphene based on their Raman fingerprints. Our intelligent Raman analysis is fully automated, with no human operation involved, is highly reliable (99.95% accuracy), and can be generalized to other 2D materials, paving the way towards industrialization of 2D materials for various applications in the future.
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47
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Tian M, Hu Q, Gu C, Xiong X, Zhang Z, Li X, Wu Y. Tunable 1/ f Noise in CVD Bernal-Stacked Bilayer Graphene Transistors. ACS APPLIED MATERIALS & INTERFACES 2020; 12:17686-17690. [PMID: 32189495 DOI: 10.1021/acsami.9b21070] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Low-frequency noise is a key performance-limiting factor in almost all electronic systems. Thanks to its excellent characteristics such as exceptionally high electron mobility, graphene has high potential for future low-noise electronic applications. Here, we present an experimental analysis of low-frequency noise in dual-gate graphene transistors based on chemical vapor-deposited Bernal-stacked bilayer graphene. The fabricated dual-gate bilayer graphene transistors adopt atomic layer-deposited Al2O3 and HfSiO as top-gate and back-gate dielectric, respectively. Our results reveal an obvious M-shape gate-dependent noise behavior which can be well described by a quantitative charge-noise model. The minimal area normalized noise spectral density at 10 Hz reaches as low as about 3 × 10-10 μm2·Hz-1 at room temperature, much lower than the best results reported previously for graphene devices. In addition, the observed noise level further decreases by more than 10 times at temperature of 20 K. Meanwhile, the noise spectral density amplitude can be tuned by more than 2 orders of magnitude at 20 K by dual-gate voltages.
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Affiliation(s)
- Mengchuan Tian
- Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Qianlan Hu
- Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Chengru Gu
- Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Xiong Xiong
- Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Zhenfeng Zhang
- Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Xuefei Li
- Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Yanqing Wu
- Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
- Institute of Microelectronics and Key Laboratory of Microelectronic Devices and Circuits (MOE), Peking University, Beijing 100871, China
- Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing 100871, China
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48
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Huang M, Bakharev PV, Wang ZJ, Biswal M, Yang Z, Jin S, Wang B, Park HJ, Li Y, Qu D, Kwon Y, Chen X, Lee SH, Willinger MG, Yoo WJ, Lee Z, Ruoff RS. Large-area single-crystal AB-bilayer and ABA-trilayer graphene grown on a Cu/Ni(111) foil. NATURE NANOTECHNOLOGY 2020; 15:289-295. [PMID: 31959931 DOI: 10.1038/s41565-019-0622-8] [Citation(s) in RCA: 62] [Impact Index Per Article: 15.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/26/2018] [Accepted: 12/10/2019] [Indexed: 06/10/2023]
Abstract
High-quality AB-stacked bilayer or multilayer graphene larger than a centimetre has not been reported. Here, we report the fabrication and use of single-crystal Cu/Ni(111) alloy foils with controllable concentrations of Ni for the growth of large-area, high-quality AB-stacked bilayer and ABA-stacked trilayer graphene films by chemical vapour deposition. The stacking order, coverage and uniformity of the graphene films were evaluated by Raman spectroscopy and transmission electron microscopy including selected area electron diffraction and atomic resolution imaging. Electrical transport (carrier mobility and band-gap tunability) and thermal conductivity (the bilayer graphene has a thermal conductivity value of about 2,300 W m-1 K-1) measurements indicated the superior quality of the films. The tensile loading response of centimetre-scale bilayer graphene films supported by a 260-nm thick polycarbonate film was measured and the average values of the Young's modulus (478 GPa) and fracture strength (3.31 GPa) were obtained.
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Affiliation(s)
- Ming Huang
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea
| | - Pavel V Bakharev
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea
| | - Zhu-Jun Wang
- Scientific Center for Optical and Electron Microscopy, ETH Zürich, Zürich, Switzerland
- Department of Inorganic Chemistry, Fritz Haber Institute of the Max Planck Society, Berlin-Dahlem, Germany
| | - Mandakini Biswal
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea
| | - Zheng Yang
- SKKU Advanced Institute of Nano-Technology, Department of Nano Science and Technology, Sungkyunkwan University, Suwon, Republic of Korea
| | - Sunghwan Jin
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea
| | - Bin Wang
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea
| | - Hyo Ju Park
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea
| | - Yunqing Li
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea
| | - Deshun Qu
- SKKU Advanced Institute of Nano-Technology, Department of Nano Science and Technology, Sungkyunkwan University, Suwon, Republic of Korea
| | - Youngwoo Kwon
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea
| | - Xianjue Chen
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea
| | - Sun Hwa Lee
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea
| | - Marc-Georg Willinger
- Scientific Center for Optical and Electron Microscopy, ETH Zürich, Zürich, Switzerland
- Department of Inorganic Chemistry, Fritz Haber Institute of the Max Planck Society, Berlin-Dahlem, Germany
| | - Won Jong Yoo
- SKKU Advanced Institute of Nano-Technology, Department of Nano Science and Technology, Sungkyunkwan University, Suwon, Republic of Korea
| | - Zonghoon Lee
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea
| | - Rodney S Ruoff
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, Republic of Korea.
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, Republic of Korea.
- Department of Chemistry, UNIST, Ulsan, Republic of Korea.
- School of Energy and Chemical Engineering, UNIST, Ulsan, Republic of Korea.
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49
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Yang L, Xu H, Liu K, Gao D, Huang Y, Zhou Q, Wu Z. Molecular dynamics simulation on the formation and development of interlayer dislocations in bilayer graphene. NANOTECHNOLOGY 2020; 31:125704. [PMID: 31775124 DOI: 10.1088/1361-6528/ab5c7e] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Molecular dynamics simulations are used to study the formation and development of interlayer dislocations in bilayer graphene (BLG) subjected to uniaxial tension. Two different BLGs are employed for the simulation: armchair (AC-BLG) and zigzag (ZZ-BLG). The atomic-level strains are calculated and the parameter 'dislocation intensity' is introduced to identify the dislocations. The interlayer dislocation is found to start at the edge and propagate to the center. For AC-BLG, the dislocations arise successively with the increase of applied strain, and all dislocations have the same width. For ZZ-BLG, the first dislocation arises alone. After that, two dislocations with different widths appear together every time. The simulated dislocation widths are in good agreement with existing experimental results. Across every dislocation, there is a transition from AB stacking to AC stacking, or vice versa. When temperature is taken into account, the dislocation boundaries become indistinct and the formation of dislocations is postponed due to the existence of dispersive small slippages. Due to the disturbance of temperature, dislocations present reciprocating movement. These findings contribute to the understanding of interlayer dislocations in two-dimensional materials, and will enable the exploration of many more strain related fundamental science problems and application challenges.
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Affiliation(s)
- Lei Yang
- State Key Laboratory of Structural Analysis for Industrial Equipment, School of Aeronautics and Astronautics, Dalian University of Technology, Dalian, People's Republic of China. Key Laboratory of Advanced Technology for Aerospace Vehicles, Liaoning Province, People's Republic of China
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50
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Xie H, Cui K, Cui L, Liu B, Yu Y, Tan C, Zhang Y, Zhang Y, Liu Z. H 2 O-Etchant-Promoted Synthesis of High-Quality Graphene on Glass and Its Application in See-Through Thermochromic Displays. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e1905485. [PMID: 31894647 DOI: 10.1002/smll.201905485] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/25/2019] [Revised: 11/26/2019] [Indexed: 06/10/2023]
Abstract
Direct growth of graphene on glass can bring an innovative revolution by coupling the complementary properties of traditional glass and modern graphene (such as transparency and conductivity), offering brand new daily-life related applications. However, preparation of high-quality graphene on nonmetallic glass is still challenging. Herein, the direct route of low sheet resistance graphene on glass is reported by using in situ-introduced water as a mild etchant and methane as a carbon precursor via chemical vapor deposition. The derived graphene features with large domain sizes and few amorphous carbon impurities. Intriguingly, the sheet resistance of graphene on glass is dramatically lowered down to ≈1170 Ω sq-1 at the optical transmittance ≈93%, ≈20% of that derived without the water etchant. Based on the highly conductive and optical transparent graphene on glass, a see-through thermochromic display is thus fabricated with transparent graphene glass as a heater. This work can motivate further investigations of the direct synthesis of high-quality graphene on functional glass and its versatile applications in transparent electronic devices or displays.
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Affiliation(s)
- Huanhuan Xie
- Center for Nanochemistry (CNC), College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Kejian Cui
- Beijing Graphene Institute (BGI), Beijing, 100091, P. R. China
| | - Lingzhi Cui
- Center for Nanochemistry (CNC), College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Bingzhi Liu
- Center for Nanochemistry (CNC), College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Yue Yu
- Center for Nanochemistry (CNC), College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Congwei Tan
- Center for Nanochemistry (CNC), College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Yingying Zhang
- Department of Chemistry and Center for Nano and Micro Mechanics, Tsinghua University, Beijing, 100084, P. R. China
| | - Yanfeng Zhang
- Center for Nanochemistry (CNC), College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Beijing Graphene Institute (BGI), Beijing, 100091, P. R. China
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, P. R. China
| | - Zhongfan Liu
- Center for Nanochemistry (CNC), College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Beijing Graphene Institute (BGI), Beijing, 100091, P. R. China
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