1
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Hao H, Li K, Ji X, Zhao X, Tong L, Zhang J. Chiral Stacking Identification of Two-Dimensional Triclinic Crystals Enabled by Machine Learning. ACS NANO 2024; 18:13858-13865. [PMID: 38743777 DOI: 10.1021/acsnano.4c02898] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2024]
Abstract
Chiral materials possess broken inversion and mirror symmetry and show great potential in the application of next-generation optic, electronic, and spintronic devices. Two-dimensional (2D) chiral crystals have planar chirality, which is nonsuperimposable on their 2D enantiomers by any rotation about the axis perpendicular to the substrate. The degree of freedom to construct vertical stacking of 2D monolayer enantiomers offers the possibility of chiral manipulation for designed properties by creating multilayers with either a racemic or enantiomerically pure stacking order. However, the rapid recognition of the relative proportion of two enantiomers becomes demanding due to the complexity of stacking orders of 2D chiral crystals. Here, we report the unambiguous identification of racemic and enantiomerically pure stackings for layered ReSe2 and ReS2 using circular polarized Raman spectroscopy. The chiral Raman response is successfully manipulated by the enantiomer proportion, and the stacking orders of multilayer ReSe2 and ReS2 can be completely clarified with the help of second harmonic generation and scanning transmission electron microscopy measurements. Finally, we trained an artificial intelligent Spectra Classification Assistant to predict the chirality and the complete crystallographic structures of multilayer ReSe2 from a single circular polarized Raman spectrum with the accuracy reaching 0.9417 ± 0.0059.
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Affiliation(s)
- He Hao
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871 Beijing, China
| | - Kangshu Li
- School of Materials Science and Engineering, Peking University, 100871 Beijing, China
| | - Xujing Ji
- School of Materials Science and Engineering, Peking University, 100871 Beijing, China
| | - Xiaoxu Zhao
- School of Materials Science and Engineering, Peking University, 100871 Beijing, China
| | - Lianming Tong
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871 Beijing, China
| | - Jin Zhang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871 Beijing, China
- School of Advanced Materials, Peking University Shenzhen Graduate School, 518055 Shenzhen, Guangdong, China
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2
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Karkee R, Strubbe DA. Panoply of Ni-Doping-Induced Reconstructions, Electronic Phases, and Ferroelectricity in 1T-MoS 2. J Phys Chem Lett 2024; 15:565-574. [PMID: 38198283 DOI: 10.1021/acs.jpclett.3c03175] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/12/2024]
Abstract
The distorted phases of monolayer 1T-MoS2 have distinct electronic properties, with potential applications in optoelectronics, catalysis, and batteries. We theoretically investigate the use of Ni-doping to generate distorted 1T phases and find not only the ones usually reported but also two further phases (3 × 3 and 4 × 4), depending on the concentration and the substitutional or adatom doping site. Corresponding pristine phases are stable after removal of dopants, which might offer a potential route to experimental synthesis. We find large ferroelectric polarizations, most notably in 3 × 3 which─compared to the recently measured 1T″─has 100 times greater ferroelectric polarization, a lower energy, and a larger band gap. Doped phases include exotic multiferroic semimetals, ferromagnetic polar metals, and improper ferroelectrics with only in-plane polarization switchable. The pristine phases have unusual multiple gaps in the conduction bands with possible applications for intermediate band solar cells, transparent conductors, and nonlinear optics.
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Affiliation(s)
- Rijan Karkee
- Department of Physics, University of California, Merced, California 95343, United States
| | - David A Strubbe
- Department of Physics, University of California, Merced, California 95343, United States
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3
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Jeong J, Kim HS, Kwon G, Jeong K, Lee H, Lee JH, Park M, Lee C, Yu S, Kim H, Im S, Yoo K, Lee E, Cho MH. Ferroelastic-Ferroelectric Multiferroicity in van der Waals Rhenium Dichalcogenides. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2108777. [PMID: 35293650 DOI: 10.1002/adma.202108777] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/01/2021] [Revised: 03/11/2022] [Indexed: 06/14/2023]
Abstract
2D multiferroics with combined ferroic orders have gained attention owing to their novel functionality and underlying science. Intrinsic ferroelastic-ferroelectric multiferroicity in single-crystalline van der Waals rhenium dichalcogenides, whose symmetries are broken by the Peierls distortion and layer-stacking order, is demonstrated. Ferroelastic switching of the domain orientation and accompanying anisotropic properties is achieved with 1% uniaxial strain using the polymer encapsulation method. Based on the electron localization function and bond dissociation energy of the Re-Re bonds, the change in bond configuration during the evolution of the domain wall and the preferred switching between the two specific orientation states are explained. Furthermore, the ferroelastic switching of ferroelectric polarization is confirmed using the photovoltaic effect. The study provides insights into the reversible bond-switching process and potential applications based on 2D multiferroicity.
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Affiliation(s)
- Jaehun Jeong
- Department of Physics, Yonsei University, Seoul, 03722, Republic of Korea
| | - Hyeon-Sik Kim
- Department of Physics, Yonsei University, Seoul, 03722, Republic of Korea
| | - Gihyeon Kwon
- Department of Physics, Yonsei University, Seoul, 03722, Republic of Korea
| | - Kwangsik Jeong
- Division of Physics and Semiconductor Science, Dongguk University, Seoul, 04620, Republic of Korea
| | - Hyangsook Lee
- Samsung Advanced Institute of Technology, Suwon, 16678, Republic of Korea
| | - Ji Hye Lee
- Center for Correlated Electron Systems (CCES), Institute of Basic Science (IBS), Seoul, 08826, Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Korea
| | - Myunguk Park
- Department of Physics, Yonsei University, Seoul, 03722, Republic of Korea
| | - Changjun Lee
- Department of Physics, Yonsei University, Seoul, 03722, Republic of Korea
| | - Sanghyuck Yu
- Department of Physics, Yonsei University, Seoul, 03722, Republic of Korea
| | - Heegoo Kim
- Samsung Advanced Institute of Technology, Suwon, 16678, Republic of Korea
| | - Seongil Im
- Department of Physics, Yonsei University, Seoul, 03722, Republic of Korea
| | - Kyunghwa Yoo
- Department of Physics, Yonsei University, Seoul, 03722, Republic of Korea
| | - Eunha Lee
- Samsung Advanced Institute of Technology, Suwon, 16678, Republic of Korea
| | - Mann-Ho Cho
- Department of Physics, Yonsei University, Seoul, 03722, Republic of Korea
- Department of System Semiconductor Engineering, Yonsei University, Seoul, 03722, Republic of Korea
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4
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Ghimire G, Dhakal KP, Choi W, Esthete YA, Kim SJ, Tran TT, Lee H, Yang H, Duong DL, Kim YM, Kim J. Doping-Mediated Lattice Engineering of Monolayer ReS 2 for Modulating In-Plane Anisotropy of Optical and Transport Properties. ACS NANO 2021; 15:13770-13780. [PMID: 34296605 DOI: 10.1021/acsnano.1c05316] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
ReS2 exhibits strong anisotropic optical and electrical responses originating from the asymmetric lattice. Here, we show that the anisotropy of monolayer (1L) ReS2 in optical scattering and electrical transport can be practically erased by lattice engineering via lithium (Li) treatment. Scanning transmission electron microscopy revealed that significant strain is induced in the lattice of Li-treated 1L-ReS2, due to high-density electron doping and the resultant formation of continuous tiling of nanodomains with randomly rotating orientations of 60°, which produced a nearly isotropic response of polarized Raman scattering and absorption of Li-treated 1L-ReS2. With Li treatment, the in-plane conductance of 1L-ReS2 increased by an order of magnitude, and its angle dependence became negligible. Our result that the asymmetric phase was converted into the isotropic phase by electron injection could significantly expand the optoelectronic applications of polymorphic two-dimensional transition metal dichalcogenides.
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Affiliation(s)
- Ganesh Ghimire
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Krishna P Dhakal
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Wooseon Choi
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Yonas Assefa Esthete
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Seon Je Kim
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Trang Thu Tran
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Hyoyoung Lee
- Center for Integrated Nanostructure Physics, Institute for Basic Science, Suwon 16419, Republic of Korea
- Department of Chemistry, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Heejun Yang
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea
| | - Dinh Loc Duong
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Center for Integrated Nanostructure Physics, Institute for Basic Science, Suwon 16419, Republic of Korea
| | - Young-Min Kim
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Center for Integrated Nanostructure Physics, Institute for Basic Science, Suwon 16419, Republic of Korea
| | - Jeongyong Kim
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
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5
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Wang Y, Das S, Iyikanat F, Dai Y, Li S, Guo X, Yang X, Cheng J, Hu X, Ghotbi M, Ye F, Lipsanen H, Wu S, Hasan T, Gan X, Liu K, Sun D, Dai Q, García de Abajo FJ, Zhao J, Sun Z. Giant All-Optical Modulation of Second-Harmonic Generation Mediated by Dark Excitons. ACS PHOTONICS 2021; 8:2320-2328. [PMID: 34476288 PMCID: PMC8377711 DOI: 10.1021/acsphotonics.1c00466] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/28/2021] [Indexed: 05/23/2023]
Abstract
All-optical control of nonlinear photonic processes in nanomaterials is of significant interest from a fundamental viewpoint and with regard to applications ranging from ultrafast data processing to spectroscopy and quantum technology. However, these applications rely on a high degree of control over the nonlinear response, which still remains elusive. Here, we demonstrate giant and broadband all-optical ultrafast modulation of second-harmonic generation (SHG) in monolayer transition-metal dichalcogenides mediated by the modified excitonic oscillation strength produced upon optical pumping. We reveal a dominant role of dark excitons to enhance SHG by up to a factor of ∼386 at room temperature, 2 orders of magnitude larger than the current state-of-the-art all-optical modulation results. The amplitude and sign of the observed SHG modulation can be adjusted over a broad spectral range spanning a few electronvolts with ultrafast response down to the sub-picosecond scale via different carrier dynamics. Our results not only introduce an efficient method to study intriguing exciton dynamics, but also reveal a new mechanism involving dark excitons to regulate all-optical nonlinear photonics.
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Affiliation(s)
- Yadong Wang
- MOE
Key Laboratory of Material Physics and Chemistry under Extraordinary
Conditions, and Shaanxi Key Laboratory of Optical Information Technology,
School of Physical Science and Technology, Northwestern Polytechnical University, Xi’an 710129, China
- Department
of Electronics and Nanoengineering, Aalto
University, Espoo 02150, Finland
| | - Susobhan Das
- Department
of Electronics and Nanoengineering, Aalto
University, Espoo 02150, Finland
| | - Fadil Iyikanat
- ICFO-Institut
de Ciencies Fotoniques, The Barcelona Institute
of Science and Technology, 08860 Castelldefels (Barcelona), Spain
| | - Yunyun Dai
- Department
of Electronics and Nanoengineering, Aalto
University, Espoo 02150, Finland
| | - Shisheng Li
- International
Center for Young Scientists, National Institute
for Materials Science, Tsukuba 305-0044, Japan
| | - Xiangdong Guo
- CAS
Key Laboratory of Nanophotonic Materials and Devices, CAS Key Laboratory
of Standardization and Measurement for Nanotechnology, CAS Center
for Excellence in Nanoscience, National Center for Nanoscience and
Technology, Beijing 100190, China
| | - Xiaoxia Yang
- CAS
Key Laboratory of Nanophotonic Materials and Devices, CAS Key Laboratory
of Standardization and Measurement for Nanotechnology, CAS Center
for Excellence in Nanoscience, National Center for Nanoscience and
Technology, Beijing 100190, China
| | - Jinluo Cheng
- Changchun
Institute of Optics, Fine Mechanics and Physics, Chinese Academy of
Sciences, Changchun, Jilin 130033, China
| | - Xuerong Hu
- Department
of Electronics and Nanoengineering, Aalto
University, Espoo 02150, Finland
- International
Cooperation Base of Photoelectric Technology and Functional Materials,
and Institute of Photonics and Photon-Technology, Northwest University, Xi’an 710069, China
| | - Masood Ghotbi
- Department
of Physics, University of Kurdistan, Pasdaran St., Sanandaj 66177-15177, Iran
| | - Fangwei Ye
- School
of Physics and Astronomy, Shanghai Jiao
Tong University, Shanghai 200240, China
| | - Harri Lipsanen
- Department
of Electronics and Nanoengineering, Aalto
University, Espoo 02150, Finland
| | - Shiwei Wu
- State
Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano
Photonic Structures (MOE), and Department of Physics, Fudan University, Shanghai 200433, China
| | - Tawfique Hasan
- Cambridge
Graphene Centre, University of Cambridge, Cambridge CB3 0FA, United Kingdom
| | - Xuetao Gan
- MOE
Key Laboratory of Material Physics and Chemistry under Extraordinary
Conditions, and Shaanxi Key Laboratory of Optical Information Technology,
School of Physical Science and Technology, Northwestern Polytechnical University, Xi’an 710129, China
| | - Kaihui Liu
- State
Key Laboratory for Mesoscopic Physics and School of Physics, Peking University, Beijing 100871, China
| | - Dong Sun
- International
Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Qing Dai
- CAS
Key Laboratory of Nanophotonic Materials and Devices, CAS Key Laboratory
of Standardization and Measurement for Nanotechnology, CAS Center
for Excellence in Nanoscience, National Center for Nanoscience and
Technology, Beijing 100190, China
| | - F. Javier García de Abajo
- ICFO-Institut
de Ciencies Fotoniques, The Barcelona Institute
of Science and Technology, 08860 Castelldefels (Barcelona), Spain
- ICREA-Institució
Catalana de Recerca i Estudis Avançats, Passeig Lluís Companys 23, 08010 Barcelona, Spain
| | - Jianlin Zhao
- MOE
Key Laboratory of Material Physics and Chemistry under Extraordinary
Conditions, and Shaanxi Key Laboratory of Optical Information Technology,
School of Physical Science and Technology, Northwestern Polytechnical University, Xi’an 710129, China
| | - Zhipei Sun
- Department
of Electronics and Nanoengineering, Aalto
University, Espoo 02150, Finland
- QTF
Centre of Excellence, Department of Applied Physics, Aalto University, Espoo 02150, Finland
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6
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Yue YY, Wang Z, Wang L, Wang HY, Chen Y, Wang D, Chen QD, Gao BR, Wee ATS, Qiu CW, Sun HB. Many-particle induced band renormalization processes in few- and mono-layer MoS 2. NANOTECHNOLOGY 2021; 32:135208. [PMID: 33427201 DOI: 10.1088/1361-6528/abcfec] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/02/2020] [Accepted: 12/02/2020] [Indexed: 06/12/2023]
Abstract
Band renormalization effects play a significant role for two-dimensional (2D) materials in designing a device structure and customizing their optoelectronic performance. However, the intrinsic physical mechanism about the influence of these effects cannot be revealed by general steady-state studies. Here, band renormalization effects in organic superacid treated monolayer MoS2, untreated monolayer MoS2and few-layer MoS2are quantitatively analyzed by using broadband femtosecond transient absorption spectroscopy. In comparison with the untreated monolayer, organic superacid treated monolayer MoS2maintains a direct bandgap structure with two thirds of carriers populated at K valley, even when the initial exciton density is as high as 2.05 × 1014cm-2(under 400 nm excitations). While for untreated monolayer and few-layer MoS2, many-particle induced band renormalizations lead to a stronger imbalance for the carrier population between K and Q valleys inkspace, and the former experiences a direct-to-indirect bandgap transition when the initial exciton density exceeds 5.0 × 1013cm-2(under 400 nm excitations). Those many-particle induced band renormalization processes further suggest a band-structure-controlling method in practical 2D devices.
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Affiliation(s)
- Yuan-Yuan Yue
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, People's Republic of China
| | - Zhuo Wang
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Lei Wang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, People's Republic of China
- Department of Electrical & Computer Engineering, National University of Singapore, Singapore 117583, Singapore
| | - Hai-Yu Wang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, People's Republic of China
| | - Yang Chen
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, People's Republic of China
| | - Dan Wang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, People's Republic of China
| | - Qi-Dai Chen
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, People's Republic of China
| | - Bing-Rong Gao
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, People's Republic of China
| | - Andrew T S Wee
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - Cheng-Wei Qiu
- Department of Electrical & Computer Engineering, National University of Singapore, Singapore 117583, Singapore
| | - Hong-Bo Sun
- State Key Laboratory of Precision Measurement and Instruments, Department of Precision Instrument, Tsinghua University, Beijing 100084, People's Republic of China
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7
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Kim Y, Kim H, Jang H, Ahn JH, Lee JD. Dual Resonant Sum Frequency Generations from Two-Dimensional Materials. NANO LETTERS 2020; 20:4530-4536. [PMID: 32422047 DOI: 10.1021/acs.nanolett.0c01363] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
We propose dual resonant optical sum frequency generation (SFG), where the two most singular resonances could be selected, and report for the monolayer (1L-) WSe2 when one (ω1) of two excitation pulses is resonant to A exciton and their sum frequency (ω1 + ω2) to D exciton. The dual resonant SFG confirms that, under an irradiation of ω1 and ω2 pulses with the same fluence of ∼1.4 × 1010 W/m2, its signal intensity could be enhanced about 20 times higher than the resonant SHG (i.e., 2ω1 to the D excitonic absorption). Further, the dual resonant SFG intensity of 1L-WSe2 is found to be 1 order of magnitude higher than the single resonant SFG intensity of 1L-WS2 under the same condition of two-pulse irradiation. Finally, observations of the dual resonant SFG are thoroughly examined using real-time time-dependent density functional theory (rt-TDDFT), and the relevant nonlinear optical characteristics are scrutinized using the Greenwood-Kubo formalism.
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Affiliation(s)
- Youngjae Kim
- Department of Emerging Materials Science, DGIST, Daegu 42988, Republic of Korea
| | - Hyunmin Kim
- Division of Biotechnology, DGIST, Daegu 42988, Republic of Korea
| | - Houk Jang
- School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Jong-Hyun Ahn
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - J D Lee
- Department of Emerging Materials Science, DGIST, Daegu 42988, Republic of Korea
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8
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Zhou Y, Maity N, Rai A, Juneja R, Meng X, Roy A, Zhang Y, Xu X, Lin JF, Banerjee SK, Singh AK, Wang Y. Stacking-Order-Driven Optical Properties and Carrier Dynamics in ReS 2. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1908311. [PMID: 32329148 DOI: 10.1002/adma.201908311] [Citation(s) in RCA: 18] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/18/2019] [Revised: 03/08/2020] [Accepted: 03/30/2020] [Indexed: 06/11/2023]
Abstract
Two distinct stacking orders in ReS2 are identified without ambiguity and their influence on vibrational, optical properties and carrier dynamics are investigated. With atomic resolution scanning transmission electron microscopy (STEM), two stacking orders are determined as AA stacking with negligible displacement across layers, and AB stacking with about a one-unit cell displacement along the a axis. First-principles calculations confirm that these two stacking orders correspond to two local energy minima. Raman spectra inform a consistent difference of modes I & III, about 13 cm-1 for AA stacking, and 20 cm-1 for AB stacking, making a simple tool for determining the stacking orders in ReS2 . Polarized photoluminescence (PL) reveals that AB stacking possesses blueshifted PL peak positions, and broader peak widths, compared with AA stacking, indicating stronger interlayer interaction. Transient transmission measured with femtosecond pump-probe spectroscopy suggests exciton dynamics being more anisotropic in AB stacking, where excited state absorption related to Exc. III mode disappears when probe polarization aligns perpendicular to b axis. The findings underscore the stacking-order driven optical properties and carrier dynamics of ReS2 , mediate many seemingly contradictory results in the literature, and open up an opportunity to engineer electronic devices with new functionalities by manipulating the stacking order.
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Affiliation(s)
- Yongjian Zhou
- Department of Mechanical Engineering, The University of Texas at Austin, Austin, TX, 78712, USA
| | - Nikhilesh Maity
- Materials Research Centre, Indian Institute of Science, Bangalore, 560012, India
| | - Amritesh Rai
- Microelectronics Research Center, The University of Texas at Austin, Austin, TX, 78758, USA
| | - Rinkle Juneja
- Materials Research Centre, Indian Institute of Science, Bangalore, 560012, India
| | - Xianghai Meng
- Department of Mechanical Engineering, The University of Texas at Austin, Austin, TX, 78712, USA
| | - Anupam Roy
- Microelectronics Research Center, The University of Texas at Austin, Austin, TX, 78758, USA
| | - Yanyao Zhang
- Department of Geological Sciences, Jackson School of Geosciences, The University of Texas at Austin, Austin, TX, 78712, USA
| | - Xiaochuan Xu
- State Key Laboratory on Tunable Laser Technology, Harbin Institute of Technology, Shenzhen, Guangdong, 518055, China
| | - Jung-Fu Lin
- Department of Geological Sciences, Jackson School of Geosciences, The University of Texas at Austin, Austin, TX, 78712, USA
- Texas Materials Institute, The University of Texas at Austin, Austin, TX, 78712, USA
| | - Sanjay K Banerjee
- Microelectronics Research Center, The University of Texas at Austin, Austin, TX, 78758, USA
| | - Abhishek K Singh
- Materials Research Centre, Indian Institute of Science, Bangalore, 560012, India
| | - Yaguo Wang
- Department of Mechanical Engineering, The University of Texas at Austin, Austin, TX, 78712, USA
- Texas Materials Institute, The University of Texas at Austin, Austin, TX, 78712, USA
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9
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Wang R, Han J, Xu P, Gao T, Zhong J, Wang X, Zhang X, Li Z, Xu L, Song B. Dual-Enhanced Doping in ReSe 2 for Efficiently Photoenhanced Hydrogen Evolution Reaction. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 7:2000216. [PMID: 32382490 PMCID: PMC7201260 DOI: 10.1002/advs.202000216] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/17/2020] [Revised: 02/28/2020] [Accepted: 03/03/2020] [Indexed: 05/26/2023]
Abstract
Rhenium dichalcogenides (ReX2, X = S or Se) are catalysts that have great promise for the photoenhanced hydrogen evolution reaction (PE-HER) because of their unique physiochemical properties. However, the catalytic performance is still restricted by their low concentration of electrocatalytic activity sites and poor injection of hot electrons. Herein, dual-enhancement in ReSe2 nanosheets (NSs) with high concentration of active sites and efficient use of hot electrons is simultaneously achieved with moderate Mo doping. Contributions from exposed catalytically active sites, improved electrical conductivity, and enhanced solar spectral response are systematically investigated. Superior PE-HER catalytical performance is obtained in Re0.94Mo0.06Se2, which has more catalytically active sites and optimized band structure than other Re1- x Mo x Se2 samples. Here, it is demonstrated that only doping can reduce the overpotential (η10) from 239 to 174 mV at -10 mA cm-2 (Δ1η10 = 65 mV). Then, η10 is further improved to 137 mV under simulated AM 1.5 sun illumination (Δ2η10 = 37 mV). The total improvement (Δη10) toward PE-HER is 102 mV (Δ1η10 + Δ2η10 = 102 mV) in optimal Re0.94Mo0.06Se2. This work presents a new perspective for researching high-efficiency photoenhanced HER ReSe2-based electrocatalysts and other layered transition metal dichalcogenides.
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Affiliation(s)
- Ran Wang
- National Key Laboratory of Science and Technology on Advanced Composites in Special EnvironmentsHarbin Institute of TechnologyHarbin150001China
| | - Jiecai Han
- National Key Laboratory of Science and Technology on Advanced Composites in Special EnvironmentsHarbin Institute of TechnologyHarbin150001China
| | - Ping Xu
- School of Chemistry and Chemical EngineeringHarbin Institute of TechnologyHarbin150001China
| | - Tangling Gao
- Institute of PetrochemistryHeilongjiang Academy of SciencesHarbin150040China
| | - Jun Zhong
- Institute of Functional Nano and Soft MaterialsSoochow UniversitySuzhouJiangsu215123China
| | - Xianjie Wang
- Department of PhysicsHarbin Institute of TechnologyHarbin150001China
| | - Xinghong Zhang
- National Key Laboratory of Science and Technology on Advanced Composites in Special EnvironmentsHarbin Institute of TechnologyHarbin150001China
| | - Zhijun Li
- Shanghai Synchrotron Radiation FacilityShanghai Institute of Applied PhysicsShanghai201800China
| | - Lingling Xu
- Key Laboratory for Photonic and Electronic Bandgap MaterialsMinistry of EducationSchool of Physics and Electronic EngineeringHarbin Normal UniversityHarbin150025China
| | - Bo Song
- National Key Laboratory of Science and Technology on Advanced Composites in Special EnvironmentsHarbin Institute of TechnologyHarbin150001China
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10
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Moon DW, Park YH, Lee SY, Lim H, Kwak S, Kim MS, Kim H, Kim E, Jung Y, Hoe HS, Kim S, Lim DK, Kim CH, In SI. Multiplex Protein Imaging with Secondary Ion Mass Spectrometry Using Metal Oxide Nanoparticle-Conjugated Antibodies. ACS APPLIED MATERIALS & INTERFACES 2020; 12:18056-18064. [PMID: 32073828 DOI: 10.1021/acsami.9b21800] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
In spite of recent developments in mass spectrometry imaging techniques, high-resolution multiplex protein bioimaging techniques are required to unveil the complex inter- and intracellular biomolecular interactions for accurate understanding of life phenomena and disease mechanisms. Herein, we report multiplex protein imaging with secondary ion mass spectrometry (SIMS) using metal oxide nanoparticle (MONP)-conjugated antibodies with <300 nm spatial resolution in the low ion dose without ion beam damage because of the high secondary ion yields of the MONPs, which can provide simultaneous imaging of several proteins, especially from cell membranes. We applied our new imaging technique for the study of hippocampal tissue samples from control and Alzheimer's disease (AD) model mice; the proximity of protein clusters in the hippocampus CA1 region showed intriguing dependence on aging and AD progress, suggesting that protein cluster proximity may be helpful for understanding pathological pathways in the microscopic cellular level.
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Affiliation(s)
- Dae Won Moon
- Department of New Biology, DGIST, Daegu 42988, Republic of Korea
| | - Young Ho Park
- Department of Energy Science and Engineering, DGIST, Daegu 42988, Republic of Korea
| | - Sun Young Lee
- Department of New Biology, DGIST, Daegu 42988, Republic of Korea
| | - Heejin Lim
- Department of New Biology, DGIST, Daegu 42988, Republic of Korea
| | - SuHwa Kwak
- Department of Computer Science and Engineering, POSTECH, Pohang 37673, Republic of Korea
| | - Minseok S Kim
- Department of New Biology, DGIST, Daegu 42988, Republic of Korea
| | - Hyunmin Kim
- Companion Diagnostics and Medical Technology Research Group, DGIST, Daegu 42988, Republic of Korea
| | - Eunjoo Kim
- Companion Diagnostics and Medical Technology Research Group, DGIST, Daegu 42988, Republic of Korea
| | - Yebin Jung
- Department of Chemistry, POSTECH, Pohang 37673, Republic of Korea
| | - Hyang-Sook Hoe
- Department of Neural Development and Disease, Korea Brain Research Institute (KBRI), 61, Cheomdan-ro, Dong-gu, Daegu 41068, Republic of Korea
| | - Sungjee Kim
- Department of Chemistry, POSTECH, Pohang 37673, Republic of Korea
| | - Dong-Kwon Lim
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Chul-Hoon Kim
- Department of Pharmacology, Yonsei University College of Medicine, Seoul 03722, Korea
| | - Su-Il In
- Department of Energy Science and Engineering, DGIST, Daegu 42988, Republic of Korea
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Sim S, Lee D, Lee J, Bae H, Noh M, Cha S, Jo MH, Lee K, Choi H. Light Polarization-Controlled Conversion of Ultrafast Coherent-Incoherent Exciton Dynamics in Few-Layer ReS 2. NANO LETTERS 2019; 19:7464-7469. [PMID: 31448923 DOI: 10.1021/acs.nanolett.9b03173] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Coherent light-matter interaction can transiently modulate the quantum states of matter under nonresonant laser excitation. This phenomenon, called the optical Stark effect, is one of the promising candidates for realizing ultrafast optical switches. However, the ultrafast modulations induced by the coherent light-matter interactions usually involve unwanted incoherent responses, significantly reducing the overall operation speed. Here, by using ultrafast pump-probe spectroscopy, we suppress the incoherent response and modulate the coherent-to-incoherent ratio in the two-dimensional semiconductor ReS2. We selectively convert the coherent and incoherent responses of an anisotropic exciton state by solely using photon polarizations, improving the control ratio by 3 orders of magnitude. The efficient modulation was enabled by transient superpositions of differential spectra from two nondegenerate exciton states due to the light polarization dependencies. This work provides a valuable contribution toward realizing ideal ultrafast optical switches.
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Affiliation(s)
- Sangwan Sim
- Division of Electrical Engineering , Hanyang University , Ansan 15588 , Korea
| | - Doeon Lee
- Department of Electrical and Computer Engineering , University of Virginia , Charlottesville , Virginia 22903 , United States
| | - Jekwan Lee
- Department of Physics and Astronomy , Seoul National University , Seoul 08826 , Korea
| | - Hyemin Bae
- School of Electrical and Electronic Engineering , Yonsei University , Seoul 03722 , Korea
| | - Minji Noh
- Department of Physics and Astronomy , Seoul National University , Seoul 08826 , Korea
| | - Soonyoung Cha
- Center for Artificial Low Dimensional Electronic Systems , Institute for Basic Science (IBS) , Pohang 3767 , Korea
| | - Moon-Ho Jo
- Center for Artificial Low Dimensional Electronic Systems , Institute for Basic Science (IBS) , Pohang 3767 , Korea
- Department of Materials Science and Engineering , Pohang University of Science and Technology (POSTECH) , Pohang 37673 , Korea
| | - Kyusang Lee
- Department of Electrical and Computer Engineering , University of Virginia , Charlottesville , Virginia 22903 , United States
- Departments of Materials Science and Engineering , University of Virginia , Charlottesville , Virginia 22903 , United States
| | - Hyunyong Choi
- Department of Physics and Astronomy , Seoul National University , Seoul 08826 , Korea
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