Helicity dependent photocurrent in electrically gated (Bi1-x Sb x )2Te3 thin films

Manipulation of Helicity-Dependent Photocurrent and Stokes Parameter Detection in Topological Insulator Bi2Te3 Nanowires

Helicity-dependent photocurrent (HDPC) and its modulation in topological insulator Bi2Te3 nanowires have been investigated. It is revealed that when the incident plane of a laser is perpendicular to the nanowire, the HDPC is an odd function of the incident angle, which is mainly contributed by the circular photogalvanic effect originating from the surface states of Bi2Te3 nanowire. When the incident plane of a laser is parallel to the nanowire, the HDPC is approximately an even function of the incident angle, which is due to the circular photon drag effect coming from the surface states. It is found that the HDPC can be effectively tuned by the back gate and the ionic liquid top gate. By analyzing the substrate dependence of the HDPC, we find that the HDPC of the Bi2Te3 nanowire on the Si substrate is an order of magnitude larger than that on SiO2, which may be due to the spin injection from the Si substrate to the Bi2Te3 nanowire. In addition, by applying different biases, the Stokes parameters of a polarized light can be extracted by arithmetic operation of the photocurrents measured in the Bi2Te3 nanowire. This work suggests that topological insulator Bi2Te3 nanowires may provide a good platform for opto-spintronic devices, especially in chirality and polarimtry detection.

Emergence of threefold symmetric helical photocurrents in epitaxial low twinned Bi2Se3

We present evidence of a strong circular photon drag effect (PDE) in topological insulators (TIs) through the observation of helicity-dependent topological photocurrents with threefold rotational symmetry using THz spectroscopy in epitaxially-grown Bi2Se3 with reduced crystallographic twinning. We establish how twinned domains introduce competing nonlinear optical (NLO) responses inherent to the crystal structure that obscure geometry-sensitive optical processes through the introduction of a spurious mirror symmetry. Minimizing the twinning defect reveals strong NLO response currents whose magnitude and direction depend on the alignment of the excitation to the crystal axes and follow the threefold rotational symmetry of the crystal. Notably, photocurrents arising from helical light reverse direction for left/right circular polarizations and maintain a strong azimuthal dependence-a result uniquely attributable to the circular PDE, where the photon momentum acts as an applied in-plane field stationary in the laboratory frame. Our results demonstrate new levels of control over the magnitude and direction of photocurrents in TIs and that the study of single-domain films is crucial to reveal hidden phenomena that couple topological order and crystal symmetries.

Electric Control of Helicity-Dependent Photocurrent and Surface Polarity Detection on Two-Dimensional Bi2O2Se Nanosheets

Bismuth oxyselenide (Bi2O2Se) is a two-dimensional (2D) layered semiconductor material with high electron Hall mobility and excellent environmental stability as well as strong spin-orbit interaction (SOI), which has attracted intense attention for application in spintronic and spin optoelectronic devices. However, a comprehensive study of spin photocurrent and its microscopic origin in Bi2O2Se is still missing. Here, the helicity-dependent photocurrent (HDPC) was investigated in Bi2O2Se nanosheets. By analyzing the dependence of HDPC on the angle of incidence, we find that the HDPC originates from surface states with Cs symmetry in Bi2O2Se, which can be attributed to the circular photogalvanic effect (CPGE) and circular photon drag effect (CPDE). It is revealed that the HDPC current almost changes linearly with the source-drain voltage. Furthermore, we demonstrate effective tuning of HDPC in Bi2O2Se by ionic liquid gating, indicating that the spin splitting of the surface electronic structure is effectively tuned. By analyzing the gate voltage dependence of HDPC, we can unambiguously identify the surface polarity and the surface electronic structure of Bi2O2Se. The large HDPC in Bi2O2Se nanosheets and its efficient electrical tuning demonstrate that 2D Bi2O2Se nanosheets may provide a good platform for opto-spintronics devices.

Circular Photogalvanic Current in Ni-Doped Cd3As2 Films Epitaxied on GaAs(111)B Substrate

Magnetic element doped Cd₃As₂ Dirac semimetal has attracted great attention for revealing the novel quantum phenomena and infrared opto-electronic applications. In this work, the circular photogalvanic effect (CPGE) was investigated at various temperatures for the Ni-doped Cd₃As₂ films which were grown on GaAs(111)B substrate by molecular beam epitaxy. The CPGE current generation was found to originate from the structural symmetry breaking induced by the lattice strain and magnetic doping in the Ni-doped Cd₃As₂ films, similar to that in the undoped ones. However, the CPGE current generated in the Ni-doped Cd₃As₂ films was approximately two orders of magnitude smaller than that in the undoped one under the same experimental conditions and exhibited a complex temperature variation. While the CPGE current in the undoped film showed a general increase with rising temperature. The greatly reduced CPGE current generation efficiency and its complex variation with temperature in the Ni-doped Cd₃As₂ films was discussed to result from the efficient capture of photo-generated carriers by the deep-level magnetic impurity bands and enhanced momentum relaxation caused by additional strong impurity scattering when magnetic dopants were introduced.

Exchange-Driven Intermixing of Bulk and Topological Surface States by Chiral Excitons in Bi_{2}Se_{3}

Topological surface states (TSS) in the prototypical topological insulator (TI) Bi_{2}Se_{3} are frequently characterized using optical probes, but electron-hole interactions and their effect on surface localization and optical response of the TSS remain unexplored. Here, we use ab initio calculations to understand excitonic effects in the bulk and surface of Bi_{2}Se_{3}. We identify multiple series of chiral excitons that exhibit both bulk and TSS character, due to exchange-driven mixing. Our results address fundamental questions about the degree to which electron-hole interactions can relax the topological protection of surface states and dipole selection rules for circularly polarized light in TIs by elucidating the complex intermixture of bulk and surface states excited in optical measurements and their coupling to light.

Topological Insulator Metamaterials

Confinement of electromagnetic fields at the subwavelength scale via metamaterial paradigms is an established method to engineer light-matter interaction in most common material systems, from insulators to semiconductors and from metals to superconductors. In recent years, this approach has been extended to the realm of topological materials, providing a new avenue to access nontrivial features of their electronic band structure. In this review, we survey various topological material classes from a photonics standpoint, including crystal growth and lithographic structuring methods. We discuss how exotic electronic features such as spin-selective Dirac plasmon polaritons in topological insulators or hyperbolic plasmon polaritons in Weyl semimetals may give rise to unconventional magneto-optic, nonlinear, and circular photogalvanic effects in metamaterials across the visible to infrared spectrum. Finally, we dwell on how these effects may be dynamically controlled by applying external perturbations in the form of electric and magnetic fields or ultrafast optical pulses. Through these examples and future perspectives, we argue that topological insulator, semimetal and superconductor metamaterials are unique systems to bridge the missing links between nanophotonic, electronic, and spintronic technologies.

Helicity dependent photoresistance measurement vs. beam-shift thermal gradient

Optical detection techniques are among the most powerful methods used to characterize spintronic phenomena. The spin orientation can affect the light polarization, which, by the reciprocal mechanism, can modify the spin density. Numerous recent experiments, report local changes in the spin density induced by a circularly polarized focused laser beam. These effects are typically probed electrically, by detecting the variations of the photoresistance or photocurrent associated to the reversal of the light helicity. Here we show that in general, when the light helicity is modified, the beam profile is slightly altered, and the barycenter of the laser spot is displaced. Consequently, the temperature gradients produced by the laser heating will be modulated, producing thermo-electric signals that alternate in phase with the light polarization. These unintended signals, having no connection with the electron spin, appear under the same experimental conditions and can be easily misinterpreted. We show how this contribution can be experimentally assessed and removed from the measured data. We find that even when the beam profile is optimized, this effect is large, and completely overshadows the spin related signals in all the materials and experimental conditions that we have tested.

Many recent studies have explored the response of magnetic systems to circularly polarised light. To achieve this, typically experiments use a birefringent crystal. Here, Yang et al show that any small error in the alignment of the crystal can result in a beam shift, and this shift can lead to spurious signals similar yet unrelated to the electron spin.

Gate-Tunable Helical Currents in Commensurate Topological Insulator/Graphene Heterostructures

van der Waals heterostructures made from graphene and three-dimensional topological insulators promise very high electron mobilities, a nontrivial spin texture, and a gate-tunability of electronic properties. Such a combination of advantageous electronic characteristics can only be achieved through proximity effects in heterostructures, as graphene lacks a large enough spin-orbit interaction. In turn, the heterostructures are promising candidates for all-electrical control of proximity-induced spin phenomena. Here, we explore epitaxially grown interfaces between graphene and the lattice-matched topological insulator Bi₂Te₂Se. For this heterostructure, spin-orbit coupling proximity has been predicted to impart an anisotropic and electronically tunable spin texture. Polarization-resolved second-harmonic generation, Raman spectroscopy, and time-resolved magneto-optic Kerr microscopy are combined to demonstrate that the atomic interfaces align in a commensurate symmetry with characteristic interlayer vibrations. By polarization-resolved photocurrent measurements, we find a circular photogalvanic effect which is drastically enhanced at the Dirac point of the proximitized graphene. We attribute the peculiar gate-tunability to the proximity-induced interfacial spin structure, which could be exploited for, e.g., spin filters.

Incident Angle Dependence of the Waveform of the Polarization-Sensitive Photoresponse in CuSe/Se Thin Film

The results of studying the waveforms of longitudinal and transverse photocurrent pulses generated in thin, semitransparent CuSe/Se films as a function of the angle of incidence (α) of a femtosecond laser beam at linear and circular polarizations are presented. It has been established that the durations of unipolar longitudinal photocurrent pulses at linear and circular polarizations of laser pumping do not depend on the angle α. It is shown that the evolution of the temporal profile of the helicity-sensitive transverse photocurrent with a change in α strongly depends on polarization. At linear polarization, the shape of the unipolar pulses remains virtually constant; however, at circular polarization, the generation of unipolar and bipolar pulses is possible, with the waveforms strongly depending on the angle α. The influence of the incidence angle on the waveforms of transverse photocurrent pulses is explained by the transformation of linear and circular polarization into an elliptical upon the refraction of light at the air/semitransparent film interface and by the interplay of photocurrents arising due to linear and circular surface photogalvanic effects in the film. The presented findings can be utilized to develop polarization and incidence angle-sensitive photovoltaic devices.

Photothermal Control of Helicity-Dependent Current in Epitaxial Sb2Te2Se Topological Insulator Thin-Films at Ambient Temperature

Optical control of helicity-dependent photocurrent in topological insulator (TI) Sb₂Te₂Se has been studied at room temperature on epitaxial thin-films grown by pulsed laser deposition (PLD). Comparison with a theoretical model, which fits the data very well, reveals different contributions to the measured photocurrent. Study of the dependence of photocurrent on the angle of incidence (wave-vector) of the excitation light with respect to the sample normal helps to identify the origin of different components of the photocurrent. Enhancement and inversion of the photocurrent in the presence of the photothermal gradient for light incident on two opposite edges of the sample occur due to selective spin-state excitation with two opposite circularly polarized lights in the presence of the unique spin-momentum locked surface states. These observations render the PLD-grown epitaxial TI thin-films promising for optoelectronic devices such as sensors, switches, and actuators whose response can be controlled by polarization as well as the angle of incidence of light under ambient conditions. The polarization response can also be tuned by the photothermal effect by suitably positioning the incident light beam on the device.

Strain-induced circular photogalvanic current in Dirac semimetal Cd3As2 films epitaxied on a GaAs(111)B substrate

Dirac semimetal (DSM) Cd₃As₂ has drawn great attention for exploring the novel quantum phenomena and high-speed optoelectronic applications. The circular photogalvanic effect (CPGE) current, resulting from the optically-excited spin orientation transport, was theoretically predicted to vanish in an ideal Dirac system due to the symmetric photoexcitation about the Dirac point. Here, we reported the observation of the CPGE photocurrent in epitaxial Cd₃As₂ thin films grown on a GaAs(111)B substrate. The signature of the CPGE is confirmed by its sign reversal upon switching the helicity of optical radiation, as well as its dependence on the excitation incident angle and power. By comparison of the CPGE response between the films with different thicknesses, it is suggested that the observed CPGE results from the reduced structure symmetry and substantially modified electronic band structure of the Cd₃As₂ thin film that undergoes large epitaxial strain. Our experimental findings provide a valuable reference for the band engineering and exotic helicity-dependent photocurrent phenomena in DSMs towards their potential opto-spintronic device applications.

Topology and geometry under the nonlinear electromagnetic spotlight

For many materials, a precise knowledge of their dispersion spectra is insufficient to predict their ordered phases and physical responses. Instead, these materials are classified by the geometrical and topological properties of their wavefunctions. A key challenge is to identify and implement experiments that probe or control these quantum properties. In this Review, we describe recent progress in this direction, focusing on nonlinear electromagnetic responses that arise directly from quantum geometry and topology. We give an overview of the field by discussing theoretical ideas, experiments and the materials that drive them. We conclude by discussing how these techniques can be combined with device architectures to uncover, probe and ultimately control quantum phases with emergent topological and correlated properties.

Chirality-Dependent Circular Photogalvanic Effect in Enantiomorphic 2D Organic-Inorganic Hybrid Perovskites

The control of the optoelectronic properties of 2D organic-inorganic hybrid perovskite (2D-OIHP) lead halides is an increasingly prevalent topic. Herein, the observation of the circular photogalvanic effect (CPGE) in new enantiomorphic 2D-OIHP lead iodides is reported, which are synthesized as a first OIHP-related system belonging to a chiral space group by incorporating organic chiral cations into the inorganic layers of lead iodides. The CPGE is an optoelectronic phenomenon associated with the spin-orbit coupling of heavy atoms in noncentrosymmetric systems. Owing to the CPGE, light-helicity-dependent steady photocurrents are generated without an external bias voltage under the irradiation of circularly polarized light. Furthermore, the sign reversal of the CPGE photocurrent depending on the chirality of the designed 2D-OIHP lead iodides is observed. This result indicates formation of the theoretically predicted radial spin-polarized texture in k-space of chiral systems owing to spin-momentum locking. Hence, chiral 2D-OIHP lead halides can be a promising platform for engineering opto-spintronic functionalities.

Topological insulator metamaterial with giant circular photogalvanic effect

One of the most notable manifestations of electronic properties of topological insulators is the dependence of the photocurrent direction on the helicity of circularly polarized optical excitation. The helicity-dependent photocurrents, underpinned by spin-momentum locking of surface Dirac electrons, are weak and easily overshadowed by bulk contributions. Here, we show that the chiral response can be enhanced by nanostructuring. The tight confinement of electromagnetic fields in the resonant nanostructure enhances the photoexcitation of spin-polarized surface states of topological insulator Bi1.5Sb0.5Te1.8Se1.2, leading to an 11-fold increase of the circular photogalvanic effect and a previously unobserved photocurrent dichroism (ρcirc = 0.87) at room temperature. The control of spin transport in topological materials by structural design is a previously unrecognized ability of metamaterials that bridges the gap between nanophotonics and spin electronics, providing opportunities for developing polarization-sensitive photodetectors.

Reversible engineering of topological insulator surface state conductivity through optical excitation

Despite the broadband response, limited optical absorption at a particular wavelength hinders the development of optoelectronics based on Dirac fermions. Heterostructures of graphene and various semiconductors have been explored for this purpose, while non-ideal interfaces often limit the performance. The topological insulator (TI) is a natural hybrid system, with the surface states hosting high-mobility Dirac fermions and the small-bandgap semiconducting bulk state strongly absorbing light. In this work, we show a large photocurrent response from a field effect transistor device based on intrinsic TI Sn-Bi_1.1Sb_0.9Te₂S (Sn-BSTS). The photocurrent response is non-volatile and sensitively depends on the initial Fermi energy of the surface state, and it can be erased by controlling the gate voltage. Our observations can be explained with a remote photo-doping mechanism, in which the light excites the defects in the bulk and frees the localized carriers to the surface state. This photodoping modulates the surface state conductivity without compromising the mobility, and it also significantly modify the quantum Hall effect of the surface state. Our work thus illustrates a route to reversibly manipulate the surface states through optical excitation, shedding light into utilizing topological surface states for quantum optoelectronics.

Visualizing Tailored Spin Phenomena in a Reduced-Dimensional Topological Superlattice

Emergent topological insulators (TIs) and their design are in high demand for manipulating and transmitting spin information toward ultralow-power-consumption spintronic applications. Here, distinct topological states with tailored spin properties can be achieved in a single reduced-dimensional TI-superlattice, (Bi₂ /Bi₂ Se₃ )-(Bi₂ /Bi₂ Se₃ )_N or (□/Bi₂ Se₃ )-(Bi₂ /Bi₂ Se₃ )_N (N is the repeating unit, □ represents an empty layer) by controlling the termination via molecular beam epitaxy. The Bi₂ -terminated superlattice exhibits a single Dirac cone with a spin momentum splitting ≈0.5 Å^-1 , producing a pronounced inverse Edelstein effect with a coherence length up to 1.26 nm. In contrast, the Bi₂ Se₃ -terminated superlattice is identified as a dual TI protected by coexisting time reversal and mirror symmetries, showing an unexpectedly long spin lifetime up to 1 ns. The work elucidates the key role of dimensionality and dual topological phases in selecting desired spin properties, suggesting a promise route for engineering topological superlattices for high-performance TI-spintronic devices.

Deep tuning of photo-thermoelectricity in topological surface states

Three-dimensional topological insulators have been demonstrated in recent years, which possess intriguing gapless, spin-polarized Dirac states with linear dispersion only on the surface. The spin polarization of the topological surface states is also locked to its momentum, which allows controlling motion of electrons using optical helicity, i.e., circularly polarized light. The electrical and thermal transport can also be significantly tuned by the helicity-control of surface state electrons. Here, we report studies of photo-thermoelectric effect of the topological surface states in Bi₂Te₂Se thin films with large tunability using varied gate voltages and optical helicity. The Seebeck coefficient can be altered by more than five times compared to the case without spin injection. This deep tuning is originated from the optical helicity-induced photocurrent which is shown to be enhanced, reduced, turned off, and even inverted due to the change of the accessed band structures by electrical gating. The helicity-selected topological surface state thus has a large effect on thermoelectric transport, demonstrating great opportunities for realizing helicity control of optoelectronic and thermal devices.

Scattering symmetry-breaking induced spin photocurrent from out-of-plane spin texture in a 3D topological insulator

We theoretically study helicity-dependent photocurrent in a three-dimensional topological insulator Bi₂Te₃ under elastic scattering of different symmetries. By exploring spin-selective optical transitions and symmetry-breaking scattering, we are able to address the out-of-plane spin texture of the topological helical surface states and to generate directional, spin-polarization tunable photocurrent that is otherwise forbidden for the original C_3v symmetry of the surface. This can be achieved regardless of the Fermi level, even under the condition when the topological states are inaccessible in dark. This work paves the way to robustly explore the out-of-plane spin texture for harvesting opto-spintronic functionalities of topological insulators.

Control of Circular Photogalvanic Effect of Surface States in the Topological Insulator Bi2Te3 via Spin Injection

The circular photogalvanic effect (CPGE) provides a method utilizing circularly polarized light to control spin photocurrent and will also lead to novel opto-spintronic devices. The CPGE of three-dimensional topological insulator Bi₂Te₃ with different substrates and thicknesses has been systematically investigated. It is found that the CPGE current can be dramatically tuned by adopting different substrates. The CPGE current of the Bi₂Te₃ films on Si substrates are more than two orders larger than that on SrTiO₃ substrates when illuminated by 1064 nm light, which can be attributed to the modulation effect due to the spin injection from Si substrate to Bi₂Te₃ films, larger light absorption coefficient, and stronger inequivalence between the top and bottom surface states for Bi₂Te₃ films grown on Si substrates. The excitation power dependence of the CPGE current of Bi₂Te₃ films on Si substrates shows a saturation at high power especially for thicker samples, whereas that on SrTiO₃ substrates almost linearly increases with excitation power. Temperature dependence of the CPGE current of Bi₂Te₃ films on Si substrates first increases and then decreases with decreasing temperature, whereas that on SrTiO₃ substrates changes monotonously with temperature. These interesting phenomena of the CPGE current of Bi₂Te₃ films on Si substrates are related to the spin injection from Si substrates to Bi₂Te₃ films. Our work not only intrigues new physics but also provides a method to effectively manipulate the helicity-dependent photocurrent via spin injection.

Circular photocurrent in the carbon nanowall film

We report the helicity-dependent photocurrent in the carbon nanowall film synthesized on the silicon substrates by the chemical vapor deposition technique. The film is composed of multilayer graphene flakes grown along the substrate normal. We measured the transverse photocurrent generated in the film under irradiation with nanosecond laser pulses by depositing two conductive electrodes along the plane of incidence. The measurements were performed by using elliptically polarized fundamental, second-, third-, and fourth-harmonics beams of the Nd:YAG laser. We revealed that the shorter the excitation wavelength, the higher the magnitude of the helicity-dependent transverse photocurrent generated in the film. In particular, at wavelengths of 266 and 355 nm, the photocurrent strongly depends on the degree of the circular polarization of the laser beam while, at the wavelength of 1064 nm, the transverse photocurrent is almost helicity independent.

Colossal mid-infrared bulk photovoltaic effect in a type-I Weyl semimetal

Broadband, efficient and fast conversion of light to electricity is crucial for sensing and clean energy. The bulk photovoltaic effect (BPVE) is a second-order nonlinear optical effect that intrinsically converts light into electrical current. Here, we demonstrate a large mid-infrared BPVE in microscopic devices of the Weyl semimetal TaAs. This discovery results from combining recent developments in Weyl semimetals, focused-ion beam fabrication and theoretical works suggesting a connection between BPVE and topology. We also present a detailed symmetry analysis that allows us to separate the shift current response from photothermal effects. The magnitude and wavelength range of the assigned shift current may impact optical detectors, clean energy and topology, and demonstrate the utility of Weyl semimetals for practical applications.

Band-Resolved Imaging of Photocurrent in a Topological Insulator

We study the microscopic origins of photocurrent generation in the topological insulator Bi_{2}Se_{3} via time- and angle-resolved photoemission spectroscopy. We image the unoccupied band structure as it evolves following a circularly polarized optical excitation and observe an asymmetric electron population in momentum space, which is the spectroscopic signature of a photocurrent. By analyzing the rise times of the population we identify which occupied and unoccupied electronic states are coupled by the optical excitation. We conclude that photocurrents can only be excited via resonant optical transitions coupling to spin-orbital textured states. Our work provides a microscopic understanding of how to control photocurrents in systems with spin-orbit coupling and broken inversion symmetry.

Quantized Conductance in Topological Insulators Revealed by the Shockley-Ramo Theorem

Crystals with symmetry-protected topological order, such as topological insulators, promise coherent spin and charge transport phenomena even in the presence of disorder at room temperature. We demonstrate how to image and read out the local conductance of helical surface modes in the prototypical topological insulators Bi_{2}Se_{3} and BiSbTe_{3}. We apply the so-called Shockley-Ramo theorem to design an optoelectronic probe circuit for the gapless surface states, and we find a well-defined conductance quantization at 1e^{2}/h within the experimental error without any external magnetic field. The unprecedented response is a clear signature of local spin-polarized transport, and it can be switched on and off via an electrostatic field effect. The macroscopic, global readout scheme is based on an electrostatic coupling from the local excitation spot to the readout electrodes, and it does not require coherent transport between electrodes, in contrast to the conventional Landauer-Büttiker description. It provides a generalizable platform for studying further nontrivial gapless systems such as Weyl semimetals and quantum spin-Hall insulators.

Temperature-Dependent Raman Scattering of Large Size Hexagonal Bi2Se3 Single-Crystal Nanoplates

Bi 2 Se 3 has extensive application as thermoelectric materials. Here, large-scale Bi 2 Se 3 single-crystal hexagonal nanoplates with size 7.50–10.0 μ m were synthesized successfully by hydrothermal method. X-ray diffraction (XRD), scanning electron microscope (SEM), and transmission electron microscope (TEM) were used to characterize the Bi 2 Se 3 nanoplates, which confirm the single-crystal quality and smooth surface morphology with large size. Micro-Raman spectra over a temperature range of 83–603 K were furthermore used to investigate the lattice dynamics of Bi 2 Se 3 nanoplates. Both 2A g 1 and 1E g 2 modes shift evidently with reduced temperature. The line shape demonstrates a significant broadening of full width at half maximum (FWHM) and red-shift of frequency with increased temperature. The temperature coefficient of A 1 g 1 , E g 2 , A 1 g 2 modes were determined to be −1.258 × 10 − 2 cm − 1 /K, −1.385 × 10 − 2 cm − 1 /K, −2.363 × 10 − 2 cm − 1 /K, respectively. Such low temperature coefficient may favor the obtaining of a high figure of merit (ZT) and indicate that Bi 2 Se 3 nanoplates were used as excellent candidates of thermoelectric materials.

Spin-momentum locked interaction between guided photons and surface electrons in topological insulators

The propagation of electrons and photons can respectively have the spin-momentum locking effect which correlates spin with linear momentum. For surface electrons in three-dimensional topological insulators (TIs), their spin is locked to the transport direction. Analogously, photons in optical waveguides carry transverse spin angular momentum which is also locked to the propagation direction. A direct connection between electron and photon spins occurs in TIs due to spin-dependent selection rules of optical transitions. Here we demonstrate an optoelectronic device that integrates a TI with a photonic waveguide. Interaction between photons in the waveguide and surface electrons in a Bi₂Se₃ layer generates a directional, spin-polarized photocurrent. Because of spin-momentum locking, changing light propagation direction reverses photon spin and thus the direction of the photocurrent. Our device represents a way of implementing coupled spin–orbit interaction between electrons and photons and may lead to applications in opto-spintronics and quantum information processing.

Whether topologically protected electron moving and photon moving can couple each other remains an interesting question. Here, Luo et al. report reversion of photon spin and the direction of the photocurrent in a topological insulator by changing light propagation direction.