Imaging the nanoscale phase separation in vanadium dioxide thin films at terahertz frequencies

Terahertz emission from giant optical rectification in a van der Waals material

The exfoliation and stacking of two-dimensional van der Waals crystals have created unprecedented opportunities in the discovery of quantum phases. A major obstacle to the advancement of this field is the limited spectroscopic access due to a mismatch in the sample sizes (10-6-10-5 m) and the wavelengths (10-4-10-3 m) of electromagnetic radiation relevant to their low-energy excitations. Here we introduce ferroelectric semiconductor NbOI2 as a two-dimensional van der Waals material capable of operating as a van der Waals terahertz emitter. We demonstrate intense and broadband terahertz generation from NbOI2 with an optical rectification efficiency that is more than one order of magnitude higher than that of ZnTe, the current standard terahertz emitter. Moreover, this NbOI2 terahertz emitter can be integrated into van der Waals heterostructures to enable on-chip near-field terahertz spectroscopy of a target van der Waals material and device. Our approach provides a general spectroscopic tool for two-dimensional van der Waals materials and quantum matter.

Nanoscale Spatially Resolved Terahertz Response of a PbS-Graphene Heterostructure

Heterostructures have promising applications in photonics and optoelectronics, mainly due to their high electron mobility and broadband photoresponse covering visible, infrared, and terahertz (THz) ranges. However, it is challenging to detect heterostructures in high definition with conventional THz techniques. Here we demonstrate a THz nanoscopic imaging method which is capable of resolving the local THz response of PbS-graphene heterostructures based upon a sophisticated THz near-field optical microscope. The interaction between the THz near field and the heterostructure is further explored by numerical simulations. The results reveal that both the composition and structure of the layers composing the heterostructure contribute to the THz signal. Furthermore, we develop a reliably finite dipole model suitable for retrieving THz optoelectronic properties of multilayered systems from measured THz hyperspectra, and realize mapping the local effective permittivity and conductivity of the heterostructure. Our work discloses the mechanism of the THz response of heterostructures, and provides a useful method for high-definition quantifying complex THz materials and devices.

Reconfigurable Terahertz Metamaterials Based on the Refractive Index Change of Epitaxial Vanadium Dioxide Films Across the Metal-Insulator Transition

The intrinsic metal-insulator transition (MIT) of VO2 films near room temperature presents significant potential for reconfigurable metamaterials in the terahertz (THz) frequency range. While previous designs primarily focused on changes in electrical conductivity across the MIT, the accompanying dielectric changes due to the mesoscopic carrier confinement effect have been largely unexplored. In this study, we integrate asymmetric split-ring resonators on 35 nm epitaxial VO2 film and identify a "dielectric window" at the early stages of the MIT. This is characterized by a redshift in the resonant frequency without a significant degradation in the resonant quality. This phenomenon is attributed to an inhomogeneous phase transition in the VO2 film, which induces a purely dielectric change at the onset of the MIT, while the electrical conductivity transition occurs later, slightly above the percolation threshold. Our findings provide deeper insights into the THz properties of VO2 films and pave the way for dielectric-based, VO2 hybrid reconfigurable metamaterials.

Wafer-Scale Transfer and Integration of Tungsten-Doped Vanadium Dioxide Films

Modern optoelectronic devices trend toward greater flexibility, wearability, and multifunctionality, demanding higher standards for fabrication and operation temperatures. Vanadium dioxide (VO2), with its metal-insulator transition (MIT) at 68 °C, serves as a crucial functional layer in many optoelectronic devices. However, VO2 usually needs to grow at >450 °C in an oxygen-containing atmosphere and to function across its MIT temperature, leading to low compatibility with most optoelectronic devices, especially on flexible substrates. In this work, we report a layer-by-layer transfer method of wafer-scale tungsten-doped VO2 films, which enables sequential integration of the VO2 films with low MIT temperatures (down to 40 °C) onto arbitrary substrates. Notably, by stacking multiple VO2 films with different doped levels, a quasi-gradient-doped VO2 architecture can be achieved, effectively broadening the MIT temperature window and reducing the hysteresis of VO2. These integrated VO2 films find a wide scope of applications in flexible temperature indicator strips, infrared camouflage devices, nonreciprocal ultrafast light modulators, and smart photoactuators. Our work promotes the development of more flexible and tunable optoelectronic devices integrated with VO2.

Terahertz Nanoscopy on Low-Dimensional Materials: Toward Ultrafast Physical Phenomena

Low-dimensional materials (LDMs) with unique electromagnetic properties and diverse local phenomena have garnered significant interest, particularly for their low-energy responses within the terahertz (THz) range. Achieving deep subwavelength resolution, THz nanoscopy offers a promising route to investigate LDMs at the nanoscale. Steady-state THz nanoscopy has been demonstrated as a powerful tool for investigating light-matter interactions across boundaries and interfaces, enabling insights into physical phenomena such as localized collective oscillations, quantum confinement of quasiparticles, and metal-to-insulator phase transitions (MITs). However, tracking the ultrafast nonequilibrium dynamics of LDMs remains challenging. Ultrafast THz nanoscopy, with femtosecond temporal resolution, provides a direct pathway to investigate and manipulate the motion of, for example, charges, currents, and carriers at ultrashort time scales. In this review, we focus on recent advances in THz nanoscopy of LDMs, with particular emphasis on the ultrafast dynamics of light-matter interaction. We provide a concise overview of recent advances and suggest future research directions in this impactful field of interdisciplinary science.

Ultra-broadband terahertz radar imaging with a 4-in. spintronic strong-field emitter

Terahertz (THz) radar offers significant advantages, notably high-frequency and strong penetration ability, making it highly promising for applications in aerospace, non-destructive testing, and other imaging scenarios. However, existing THz radar imaging technologies face challenges in large-scale target detection due to the complexity and high costs of the system, which limits their development and commercial application. Here we establish a radar system based on a one-dimensional photonic crystal structure-enhanced 4-inch spintronic strong-field THz emitter and obtain THz radar signals and imaging with a signal-to-noise ratio of ∼58 dB and a bandwidth exceeding 5 THz. Through the precise design of the emitter structure, we ensure not only the generation of a high-quality uniform plane wave when the THz beam diameter reaches 4 in. but also the applicability of the THz field strength for radar imaging measurements within a 4-in. field of view area. The approach provides a promising platform for ultra-broadband, high-resolution, near-monostatic THz radar imaging, with broad potential applications in aerospace engineering, stealth testing, THz 3D reconstruction, and THz tomography.

Angle-Controlled Nanospectrum Switching from Lorentzian to Fano Lineshapes

The tunability of spectral lineshapes, ranging from Lorentzian to Fano profiles, is essential for advancing nanoscale photonic technologies. Conventional far-field techniques are insufficient for studying nanoscale phenomena, particularly within the terahertz (THz) range. In this work, we use a U-shaped resonant ring on a waveguide substrate to achieve precise modulation of Lorentzian, Fano, and antiresonance profiles. THz scattering scanning near-field optical microscopy (s-SNOM) reveals the underlying physical mechanism of these transitions, driven by time-domain phase shifts between the background excitation from the waveguide and the resonance of the U-shaped ring. Our approach reveals a pronounced asymmetry in the near-field response, which remains undetectable in far-field systems. The ability to control spectral lineshapes at the nanoscale presents promising applications in characterizing composite nanoresonators and developing nanoscale phase sensors.

Revealing subterahertz atomic vibrations in quantum paraelectrics by surface-sensitive spintronic terahertz spectroscopy

Understanding surface collective dynamics in quantum materials is crucial for advancing quantum technologies. For example, surface phonon modes in quantum paraelectrics are thought to be essential in facilitating interfacial superconductivity. However, detecting these modes, especially below 1 terahertz, is challenging because of limited sampling volumes and the need for high spectroscopic resolution. Here, we report surface soft transverse optical (TO1) phonon dynamics in KTaO3 and SrTiO3 by surface-sensitive spintronic terahertz spectroscopy that can sense the collective modes only a few nanometers deep from the surface. In KTaO3, the TO1 mode softens and sharpens with decreasing temperature, leveling off at 0.7 terahertz. In contrast, this mode in SrTiO3 broadens substantially below the quantum paraelectric crossover and coincides with the hardening of a sub-milli-electron volt phonon mode related to the antiferrodistortive transition. These observations that deviate from their bulk properties may have implications for interfacial superconductivity and ferroelectricity. The developed technique opens opportunities for sensing low-energy surface collective excitations.

Time-Domain-Filtered Terahertz Nanoscopy of Intrinsic Light-Matter Interactions

Terahertz (THz) technology holds great potential across diverse applications, including biosensing and information communications, but conventional far-field techniques are limited by diffraction. Near-field optical microscopy overcomes this barrier through a sharp tip that concentrates incident THz waves into nanometric volumes, detecting scattered near-field to reveal nanoscale optical properties. However, owing to the large THz wavelengths, resonant surface waves arising on the tip and cantilever obscure the intrinsic response. Here we combine near-field microscopy with THz time-domain spectroscopy and implement time-domain filtering with an elongated cantilever to eliminate this artifact, achieving intrinsic nanospectroscopy and nanoimaging. By applying this technique, we distinguish and characterize historical pigments of an ancient sculpture, such as vermilion and red lead, on the nanoscale. We also unravel deep-subwavelength localized resonance modes in THz optical antennas, demonstrating capabilities for THz nanophotonics. Our work advances THz nanoimaging and nanospectroscopy techniques to probe intrinsic nanoscale THz light-matter interactions.

Electronic interactions in Dirac fluids visualized by nano-terahertz spacetime interference of electron-photon quasiparticles

Ultraclean graphene at charge neutrality hosts a quantum critical Dirac fluid of interacting electrons and holes. Interactions profoundly affect the charge dynamics of graphene, which is encoded in the properties of its electron-photon collective modes: surface plasmon polaritons (SPPs). Here, we show that polaritonic interference patterns are particularly well suited to unveil the interactions in Dirac fluids by tracking polaritonic interference in time at temporal scales commensurate with the electronic scattering. Spacetime SPP interference patterns recorded in terahertz (THz) frequency range provided unobstructed readouts of the group velocity and lifetime of polariton that can be directly mapped onto the electronic spectral weight and the relaxation rate. Our data uncovered prominent departures of the electron dynamics from the predictions of the conventional Fermi-liquid theory. The deviations are particularly strong when the densities of electrons and holes are approximately equal. The proposed spacetime imaging methodology can be broadly applied to probe the electrodynamics of quantum materials.

Crossmodal sensory neurons based on high-performance flexible memristors for human-machine in-sensor computing system

Constructing crossmodal in-sensor processing system based on high-performance flexible devices is of great significance for the development of wearable human-machine interfaces. A bio-inspired crossmodal in-sensor computing system can perform real-time energy-efficient processing of multimodal signals, alleviating data conversion and transmission between different modules in conventional chips. Here, we report a bio-inspired crossmodal spiking sensory neuron (CSSN) based on a flexible VO2 memristor, and demonstrate a crossmodal in-sensor encoding and computing system for wearable human-machine interfaces. We demonstrate excellent performance in the VO2 memristor including endurance (>1012), uniformity (0.72% for cycle-to-cycle variations and 3.73% for device-to-device variations), speed (<30 ns), and flexibility (bendable to a curvature radius of 1 mm). A flexible hardware processing system is implemented based on the CSSN, which can directly perceive and encode pressure and temperature bimodal information into spikes, and then enables the real-time haptic-feedback for human-machine interaction. We successfully construct a crossmodal in-sensor spiking reservoir computing system via the CSSNs, which can achieve dynamic objects identification with a high accuracy of 98.1% and real-time signal feedback. This work provides a feasible approach for constructing flexible bio-inspired crossmodal in-sensor computing systems for wearable human-machine interfaces.

Terahertz spectroscopy of collective charge density wave dynamics at the atomic scale

Charge density waves are wave-like modulations of a material's electron density that display collective amplitude and phase dynamics. The interaction with atomic impurities induces strong spatial heterogeneity of the charge-ordered phase. Direct real-space observation of phase excitation dynamics of such defect-induced charge modulation is absent. Here, by utilizing terahertz pump-probe spectroscopy in a scanning tunnelling microscope, we measure the ultrafast collective dynamics of the charge density wave in the transition metal dichalcogenide 2H-NbSe2 with atomic spatial resolution. The tip-enhanced electric field of the terahertz pulses excites oscillations of the charge density wave that vary in magnitude and frequency on the scale of individual atomic impurities. Overlapping phase excitations originating from the randomly distributed atomic defects in the surface create this spatially structured response of the charge density wave. This ability to observe collective charge order dynamics with local probes makes it possible to study the dynamics of correlated materials at the intrinsic length scale of their underlying interactions.

Analytical electron microscopy analysis of insulating and metallic phases in nanostructured vanadium dioxide

Vanadium dioxide (VO2) is a strongly correlated material that exhibits the insulator-to-metal transition (IMT) near room temperature, which makes it a promising candidate for applications in nanophotonics or optoelectronics. However, creating VO2 nanostructures with the desired functionality can be challenging due to microscopic inhomogeneities that can significantly impact the local optical and electronic properties. Thin lamellas, produced by focused ion beam milling from a homogeneous layer, provide a useful prototype for studying VO2 at the truly microscopic level using a scanning transmission electron microscope (STEM). High-resolution imaging is used to identify structural inhomogeneities while electron energy-loss spectroscopy (EELS) supported by statistical analysis helps to detect V x O y stoichiometries with a reduced oxidation number of vanadium at the areas of thickness below 70 nm. On the other hand, the thicker areas are dominated by vanadium dioxide, where the signatures of the IMT are detected in both core-loss and low-loss EELS experiments with in situ heating. The experimental results are interpreted with ab initio and semi-classical calculations. This work shows that structural inhomogeneities such as pores and cracks present no harm to the desired optical properties of VO2 samples.

VO2 Films Decorated with an MXene Interface for Decreased-Power-Triggered Terahertz Modulation

VO2, which exhibits semiconductor-metal phase transition characteristics occurring on a picosecond time scale, holds great promise for ultrafast terahertz modulation in next-generation communication. However, as of now, there is no reported prototype for an ultrafast device. The temperature effect has been proposed as one of the major obstacles. Consequently, reducing the excitation threshold for the phase transition would be highly significant. The traditional strategy typically involves chemical doping, but this approach often leads to a decrease in phase transition amplitude and a slower transition speed. In this work, we proposed a design featuring a highly conductive MXene interfacial layer between the VO2 film and the substrate. We demonstrate a significant reduction in the phase transition threshold for both temperature and laser-induced phase transition by adjusting the conductivity of the MXene layers with varying thicknesses. Our observations show that the phase transition temperature can be decreased by 9 °C, while the pump fluence for laser excitation can be reduced by as high as 36%. The ultrafast phase transition process on a picosecond scale, as revealed by the optical-pump terahertz-probe method, suggests that the MXene layers have minimal impact on the phase transition speed. Moreover, the reduced phase transition threshold can remarkably alleviate the photothermal effect and inhibit temperature rise and diffusion in VO2 triggered by laser. This study offers a blueprint for designing VO2/MXene hybrid films with reduced phase transition thresholds. It holds significant potential for the development of low-power, intelligent optical and electrical devices including, but not limited to, terahertz modulators based on phase transition phenomena.

Nano-compositional imaging of the lanthanum silicide system at THz wavelengths

Terahertz scattering-type scanning near-field optical microscopy (THz-sSNOM) provides a noninvasive way to probe the low frequency conductivity of materials and to characterize material compositions at the nanoscale. However, the potential capability of atomic compositional analysis with THz nanoscopy remains largely unexplored. Here, we perform THz near-field imaging and spectroscopy on a model rare-earth alloy of lanthanum silicide (La-Si) which is known to exhibit diverse compositional and structural phases. We identify subwavelength spatial variations in conductivity that is manifested as alloy microstructures down to much less than 1 μm in size and is remarkably distinct from the surface topography of the material. Signal contrasts from the near-field scattering responses enable mapping the local silicon/lanthanum content differences. These observations demonstrate that THz-sSNOM offers a new avenue to investigate the compositional heterogeneity of material phases and their related nanoscale electrical as well as optical properties.

Two-dimensional heavy fermions in the van der Waals metal CeSiI

Heavy-fermion metals are prototype systems for observing emergent quantum phases driven by electronic interactions1-6. A long-standing aspiration is the dimensional reduction of these materials to exert control over their quantum phases7-11, which remains a significant challenge because traditional intermetallic heavy-fermion compounds have three-dimensional atomic and electronic structures. Here we report comprehensive thermodynamic and spectroscopic evidence of an antiferromagnetically ordered heavy-fermion ground state in CeSiI, an intermetallic comprising two-dimensional (2D) metallic sheets held together by weak interlayer van der Waals (vdW) interactions. Owing to its vdW nature, CeSiI has a quasi-2D electronic structure, and we can control its physical dimension through exfoliation. The emergence of coherent hybridization of f and conduction electrons at low temperature is supported by the temperature evolution of angle-resolved photoemission and scanning tunnelling spectra near the Fermi level and by heat capacity measurements. Electrical transport measurements on few-layer flakes reveal heavy-fermion behaviour and magnetic order down to the ultra-thin regime. Our work establishes CeSiI and related materials as a unique platform for studying dimensionally confined heavy fermions in bulk crystals and employing 2D device fabrication techniques and vdW heterostructures12 to manipulate the interplay between Kondo screening, magnetic order and proximity effects.

Ultrabroadband Terahertz Near-Field Nanospectroscopy with a HgCdTe Detector

While near-field infrared nanospectroscopy provides a powerful tool for nanoscale material characterization, broadband nanospectroscopy of elementary material excitations in the single-digit terahertz (THz) range remains relatively unexplored. Here, we study liquid-Helium-cooled photoconductive Hg1-XCdXTe (MCT) for use as a fast detector in near-field nanospectroscopy. Compared to the common T = 77 K operation, liquid-Helium cooling reduces the MCT detection threshold to ∼22 meV, improves the noise performance, and yields a response bandwidth exceeding 10 MHz. These improved detector properties have a profound impact on the near-field technique, enabling unprecedented broadband nanospectroscopy across a range of 5 to >50 THz (175 to >1750 cm-1, or <6 to 57 μm), i.e., covering what is commonly known as the "THz gap". Our approach has been implemented as a user program at the National Synchrotron Light Source II, Upton, USA, where we showcase ultrabroadband synchrotron nanospectroscopy of phonons in ZnSe (∼7.8 THz) and BaF2 (∼6.7 THz), as well as hyperbolic phonon polaritons in GeS (6-8 THz).

Infrared nano-imaging of Dirac magnetoexcitons in graphene

Magnetic fields can have profound effects on the motion of electrons in quantum materials. Two-dimensional electron systems subject to strong magnetic fields are expected to exhibit quantized Hall conductivity, chiral edge currents and distinctive collective modes referred to as magnetoplasmons and magnetoexcitons. Generating these propagating collective modes in charge-neutral samples and imaging them at their native nanometre length scales have thus far been experimentally elusive. Here we visualize propagating magnetoexciton polaritons at their native length scales and report their magnetic-field-tunable dispersion in near-charge-neutral graphene. Imaging these collective modes and their associated nano-electro-optical responses allows us to identify polariton-modulated optical and photo-thermal electric effects at the sample edges, which are the most pronounced near charge neutrality. Our work is enabled by innovations in cryogenic near-field optical microscopy techniques that allow for the nano-imaging of the near-field responses of two-dimensional materials under magnetic fields up to 7 T. This nano-magneto-optics approach allows us to explore and manipulate magnetopolaritons in specimens with low carrier doping via harnessing high magnetic fields.

Narrow linewidth and wideband tunable continuous-wave terahertz generator based on difference frequency generation with DAST crystal

A narrow linewidth and wideband tunable continuous-wave terahertz generator with DAST crystal has been demonstrated in this paper. Two narrow-linewidth CW fiber lasers were used as the pump sources for difference frequency generation. The terahertz wave can be continuously tunable in the range of 1.1-3 THz. The maximum output power of 2.79nW was obtained at 2.568 THz. The linewidth of the output THz wave was estimated to be 56.5 MHz by fitting transmission spectrum of CO gas at 450 Pa pressure around 80.52 cm-1 with the Vogit gas model. Furthermore, the output spectra at room temperature and pressure was in good agreement with the air absorption lines in Hitran database. Moreover, the narrower absorption characteristic spectrum of 2-Deoxy-D-Glucose sample has been obtained through the spectrum measurements. Therefore, it could promote the practical prospect of tunable CW-THz source, which will have good potential in THz high-precision spectroscopic detection and multispectral imaging.

Study of Elastic and Structural Properties of BaFe2As2 Ultrathin Film Using Picosecond Ultrasonics

We obtain the through-thickness elastic stiffness coefficient (C33) in nominal 9 nm and 60 nm BaFe2As2 (Ba-122) thin films by using picosecond ultrasonics. Particularly, we reveal the increase in elastic stiffness as film thickness decreases from bulk value down to 9 nm, which we attribute to the increase in intrinsic strain near the film-substrate interface. Our density functional theory (DFT) calculations reproduce the observed acoustic oscillation frequencies well. In addition, temperature dependence of longitudinal acoustic (LA) phonon mode frequency for 9 nm Ba-122 thin film is reported. The frequency change is attributed to the change in Ba-122 orthorhombicity (a-b)/(a+b). This conclusion can be corroborated by our previous ultrafast ellipticity measurements in 9 nm Ba-122 thin film, which exhibit strong temperature dependence and indicate the structural phase transition temperature Ts.

Rough surface effect in terahertz near-field microscopy: 3D simulation analysis

Terahertz scattering-type scanning near-field optical microscopy (THz-s-SNOM) has emerged as a powerful technique for high-resolution imaging. However, most previous studies have focused on simplified smooth surface models, overlooking the realistic surface roughness induced by contamination during sample preparation. In this work, we present a novel 3D model, to the best of our knowledge, that combines the point dipole model with the finite element method to investigate the influence of sample morphology on scattered signals. We explore surfaces with a protrusion, a depression, and random roughness, characterizing the variations in scattered signals and highlighting the role of higher-order scattering in mitigating surface roughness effects. Our findings provide valuable insights into the impact of sample morphology on THz-s-SNOM imaging.

Machine Learning for Optical Scanning Probe Nanoscopy

The ability to perform nanometer-scale optical imaging and spectroscopy is key to deciphering the low-energy effects in quantum materials, as well as vibrational fingerprints in planetary and extraterrestrial particles, catalytic substances, and aqueous biological samples. These tasks can be accomplished by the scattering-type scanning near-field optical microscopy (s-SNOM) technique that has recently spread to many research fields and enabled notable discoveries. Herein, it is shown that the s-SNOM, together with scanning probe research in general, can benefit in many ways from artificial-intelligence (AI) and machine-learning (ML) algorithms. Augmented with AI- and ML-enhanced data acquisition and analysis, scanning probe optical nanoscopy is poised to become more efficient, accurate, and intelligent.

Imaging the Terahertz Nanoscale Conductivity of Polycrystalline CsPbBr3 Perovskite Thin Films

Terahertz (THz) radiation is a valuable tool to investigate the electronic properties of lead halide perovskites (LHPs). However, attaining high-resolution information remains elusive, as the diffraction-limited spatial resolution (∼300 μm) of conventional THz methods prevents a direct analysis of microscopic effects. Here, we employ THz scattering scanning near-field optical microscopy (THz-sSNOM) for nanoscale imaging of cesium lead bromide (CsPbBr₃) thin films down to the single grain level at 600 GHz. Adopting a scattering model, we are able to derive the local THz nanoscale conductivity in a contact-free fashion. Increased THz near-field signals at CsPbBr₃ grain boundaries complemented by correlative transmission electron microscopy-energy-dispersive X-ray spectroscopy elemental analysis point to the formation of halide vacancies (V_Br) and Pb-Pb bonds, which induce charge carrier trapping and can lead to nonradiative recombination. Our study establishes THz-sSNOM as a powerful THz nanoscale analysis platform for thin-film semiconductors such as LHPs.

Hydrogen Bonding Propagated Phase Separation in Quasi-Epitaxial Single Crystals: A Pd-Br Molecular Insulator

In condensed matter, phase separation is strongly related to ferroelasticity, ferroelectricity, ferromagnetism, electron correlation, and crystallography. These ferroics are important for nano-electronic devices such as non-volatile memory. However, the quantitative information regarding the lattice (atomic) structure at the border of phase separation is unclear in many cases. Thus, to design electronic devices at the molecular level, a quantitative electron-lattice relationship must be established. Herein, we elucidated a Pd^II-Pd^IV/Pd^III-Pd^III phase transition and phase separation mechanism for [Pd(cptn)₂Br]Br₂ (cptn = 1R,2R-diaminocyclopentane), propagated through a hydrogen-bonding network. Although the Pd···Pd distance was used to determine the electronic state, the differences in the Pd···Pd distance and the optical gap between Mott-Hubbard (MH) and charge-density-wave (CDW) states were only 0.012 Å and 0.17 eV, respectively. The N-H···Br···H-N hydrogen-bonding network functioned as a jack, adjusting the structural difference dynamically, and allowing visible ferroelastic phase transition/separation in a fluctuating N₂ gas flow. Additionally, the effect of the phase separation on the spin susceptibility and electrical conductivity were clarified to represent the quasi-epitaxial crystals among CDW-MH states. These results indicate that the phase transitions and separations could be controlled via atomic and molecular level modifications, such as the addition of hydrogen bonding.

Imaging of THz Photonic Modes by Scattering Scanning Near-Field Optical Microscopy

We investigated the near-field distribution associated to the photonic mode of terahertz photonic micro-resonators by scattering scanning near-field optical microscopy. Probing individual THz micro-resonators concentrating electric fields is important for high-sensitivity chemical and biochemical sensing and fundamental light-matter interactions studies at the nanoscale. We imaged both electric field concentration predicted by numerical simulations and unexpected patterns that deviate from intuitive assumptions. We propose a scenario based on the combination of the near-field with the far-field pattern of the probe/resonator ensemble that is in excellent agreement with the experimental data and propose an image analysis procedure to recover the near-field of such structures.

Terahertz-slicing - an all-optical synchronization for 4th generation light sources

A conceptually new approach to synchronizing accelerator-based light sources and external laser systems is presented. The concept is based on utilizing a sufficiently intense accelerator-based single-cycle terahertz pulse to slice a thereby intrinsically synchronized femtosecond-level part of a longer picosecond laser pulse in an electro-optic crystal. A precise synchronization of the order of 10 fs is demonstrated, allowing for real-time lock-in amplifier signal demodulation. We demonstrate successful operation of the concept with three benchmark experiments using a 4th generation accelerator-based terahertz light source, i.e. (i) far-field terahertz time-domain spectroscopy, (ii) terahertz high harmonic generation spectroscopy, and (iii) terahertz scattering-type scanning near-field optical microscopy.

X-ray nanodiffraction imaging reveals distinct nanoscopic dynamics of an ultrafast phase transition

SignificancePhase transitions, the changes between states of matter with distinct electronic, magnetic, or structural properties, are at the center of condensed matter physics and underlie valuable technologies. First-order phase transitions are intrinsically heterogeneous. When driven by ultrashort excitation, nanoscale phase regions evolve rapidly, which has posed a significant experimental challenge to characterize. The newly developed laser-pumped X-ray nanodiffraction imaging technique reported here has simultaneous 100-ps temporal and 25-nm spatial resolutions. This approach reveals pathways of the nanoscale structural rearrangement upon ultrafast optical excitation, different from those transitions under slowly varying parameters. The spatiotemporally resolved structural characterization provides crucial nanoscopic insights into ultrafast phase transitions and opens opportunities for controlling nanoscale phases on ultrafast time scales.

Bio‑inspired Tactile Nociceptor Constructed by Integrating Wearable Sensing Paper and VO2 Threshold Switching Memristor

The sensations of touch and pain are fundamental components of our daily life, which can transport vital information about the surroundings and provide protection to our bodies. In this study,...

Milliwatt average power, MHz-repetition rate, broadband THz generation in organic crystal BNA with diamond substrate

We demonstrate a 13.3 MHz repetition rate, broadband THz source with milliwatt- average power, obtained by collinear optical rectification of a high-power Yb-doped thin-disk laser in the organic crystal BNA (N-benzyl-2-methyl-4-nitroaniline). Our source reaches a maximum THz average power of 0.95 mW with an optical-to-THz efficiency of 4×10^-4 and a spectral bandwidth spanning up to 6 THz at -50 dB, driven by 2.4 W average power (after an optical chopper with duty cycle of 10%), 85 fs-pulses. This high average power excitation was possible without damaging the crystal by using a diamond-heatsinked crystal with significantly improved thermal properties. To the best of our knowledge, this result represents the highest THz average power reported so far using the commercially available organic crystal BNA, showing the potential of these crystals for high average power, high repetition rate femtosecond excitation. The combination of high power, high dynamic range, high repetition rate and broadband spectrum makes the demonstrated THz source highly attractive to improve various time-domain spectroscopy applications. Furthermore, we present a first exploration of the thermal behavior of BNA in this excitation regime, showing that thermal effects are the main limitation in average power scaling in these crystals.

Nanotextured Dynamics of a Light-Induced Phase Transition in VO2

We investigate transient nanotextured heterogeneity in vanadium dioxide (VO₂) thin films during a light-induced insulator-to-metal transition (IMT). Time-resolved scanning near-field optical microscopy (Tr-SNOM) is used to study VO₂ across a wide parameter space of infrared frequencies, picosecond time scales, and elevated steady-state temperatures with nanoscale spatial resolution. Room temperature, steady-state, phonon enhanced nano-optical contrast reveals preexisting "hidden" disorder. The observed contrast is associated with inequivalent twin domain structures. Upon thermal or optical initiation of the IMT, coexisting metallic and insulating regions are observed. Correlations between the transient and steady-state nano-optical textures reveal that heterogeneous nucleation is partially anchored to twin domain interfaces and grain boundaries. Ultrafast nanoscopic dynamics enable quantification of the growth rate and bound the nucleation rate. Finally, we deterministically anchor photoinduced nucleation to predefined nanoscopic regions by locally enhancing the electric field of pump radiation using nanoantennas and monitor the on-demand emergent metallicity in space and time.

Terahertz response of monolayer and few-layer WTe2 at the nanoscale

Tungsten ditelluride (WTe2) is an atomically layered transition metal dichalcogenide whose physical properties change systematically from monolayer to bilayer and few-layer versions. In this report, we use apertureless scattering-type near-field optical microscopy operating at Terahertz (THz) frequencies and cryogenic temperatures to study the distinct THz range electromagnetic responses of mono-, bi- and trilayer WTe2 in the same multi-terraced micro-crystal. THz nano-images of monolayer terraces uncovered weakly insulating behavior that is consistent with transport measurements. The near-field signal on bilayer regions shows moderate metallicity with negligible temperature dependence. Subdiffractional THz imaging data together with theoretical calculations involving thermally activated carriers favor the semimetal scenario with [Formula: see text] over the semiconductor scenario for bilayer WTe2. Also, we observed clear metallic behavior of the near-field signal on trilayer regions. Our data are consistent with the existence of surface plasmon polaritons in the THz range confined to trilayer terraces in our specimens. Finally, data for microcrystals up to 12 layers thick reveal how the response of a few-layer WTe2 asymptotically approaches the bulk limit.

Quantitative terahertz emission nanoscopy with multiresonant near-field probes

By sampling terahertz waveforms emitted from InAs surfaces, we reveal how the entire, realistic geometry of typical near-field probes drastically impacts the broadband electromagnetic fields. In the time domain, these modifications manifest as a shift in the carrier-envelope phase and emergence of a replica pulse with a time delay dictated by the length of the cantilever. This interpretation is fully corroborated by quantitative simulations of terahertz emission nanoscopy based on the finite element method. Our approach provides a solid theoretical framework for quantitative nanospectroscopy and sets the stage for a reliable description of subcycle, near-field microscopy at terahertz frequencies.

Vanadium Dioxide–Iridium Composite Development: Specific Near Infrared Surface Plasmon Resonance

This work serves as a roadmap for the development of a Vanadium dioxide (VO2)–Iridium composite based on the self-assembly of closely packed colloidal polystyrene microspheres (P-spheres) coupled with a Pulsed Laser Deposition (PLD) process. The self-assembly of a monolayer of PS is performed on an Al2O3-c substrate, using an adapted Langmuir–Blodgett (LB) process. Then, on the substrate covered with P-spheres, a 50-nanometer Iridium layer is deposited by PLD. The Iridium deposition is followed by the removal of PS with acetone, revealing an array of triangular shaped metallic elements formed on the underlaying substrate. In a last deposition step, 50-, 100- and 200-nanometer thin films of VO2 are deposited by PLD on top of the substrates covered with the Iridium quasi-triangles, forming a composite. Adapting the size of the P-spheres leads to control of both the size of the Iridium micro-triangle and, consequently, the optical transmittance of the composite. Owing to their shape and size the Iridium micro-triangles exhibit localized surface plasmon resonance (LSPR) characterized by a selective absorption of light. Due to the temperature dependent properties of VO2, the LSPR properties of the composite can be changeable and tunable.

Roadmap of Terahertz Imaging 2021

In this roadmap article, we have focused on the most recent advances in terahertz (THz) imaging with particular attention paid to the optimization and miniaturization of the THz imaging systems. Such systems entail enhanced functionality, reduced power consumption, and increased convenience, thus being geared toward the implementation of THz imaging systems in real operational conditions. The article will touch upon the advanced solid-state-based THz imaging systems, including room temperature THz sensors and arrays, as well as their on-chip integration with diffractive THz optical components. We will cover the current-state of compact room temperature THz emission sources, both optolectronic and electrically driven; particular emphasis is attributed to the beam-forming role in THz imaging, THz holography and spatial filtering, THz nano-imaging, and computational imaging. A number of advanced THz techniques, such as light-field THz imaging, homodyne spectroscopy, and phase sensitive spectrometry, THz modulated continuous wave imaging, room temperature THz frequency combs, and passive THz imaging, as well as the use of artificial intelligence in THz data processing and optics development, will be reviewed. This roadmap presents a structured snapshot of current advances in THz imaging as of 2021 and provides an opinion on contemporary scientific and technological challenges in this field, as well as extrapolations of possible further evolution in THz imaging.

Strain engineering of optical properties in transparent VO2/muscovite heterostructures

Transparent VO₂/muscovite heterostructures have attracted considerable attention because of their unique chemical and physical properties and potential practical applications. In this paper, we investigated the influence of uniaxial mechanical strain on the optical properties of VO₂/muscovite heterostructures through Raman scattering and optical transmittance measurements. Under applied strain, linear shifts in peak positions of Raman-active phonon modes at approximately 340, 309, and 391 cm^-1 were observed. The extracted Grüneisen parameter values were approximately between 0.44 and 0.57. Furthermore, a pronounced strain-induced change in the metal-insulator transition (MIT) temperature was observed, which decreased under compressive strain and increased under tensile strain. The rates of MIT temperature variation reached 4.5 °C per % and 7.1 °C per % at a wavelength of 1200 nm during heating and cooling processes, respectively. These results demonstrate that the modulation of the optical properties of VO₂/muscovite heterostructures is controllable and reversible through strain engineering, opening up new opportunities for applications in flexible and tunable photonic devices.

Antenna-coupled field-effect transistors as detectors for terahertz near-field microscopy

We report the successful implementation of antenna-coupled terahertz field-effect transistors (TeraFETs) as homodyne detectors in a scattering-type scanning near-field optical microscope (s-SNOM) operating with radiation at 246.5 GHz. The devices were fabricated in Si CMOS foundry technology with two different technologies, a 90 nm process, which provides a better device performance, and a less expensive 180 nm one. The high sensitivity enables s-SNOM demodulation at up to the 10th harmonic of the cantilever's oscillation frequency. While we demonstrate application of TeraFETs at a fixed radiation frequency, this type of detector device is able to cover the entire THz frequency range.

Near-Field Nanoscopic Terahertz Imaging of Single Proteins

Terahertz (THz) biological imaging has attracted intense attention due to its capability of acquiring physicochemical information in a label-free, noninvasive, and nonionizing manner. However, extending THz imaging to the single-molecule level remains a challenge, partly due to the weak THz reflectivity of biomolecules with low dielectric constants. Here, the development of graphene-mediated THz scattering-type scanning near-field optical microscope for direct imaging of single proteins is reported. Importantly, it is found that a graphene substrate with high THz reflectivity and atomic flatness can provide high THz contrast against the protein molecules. In addition, a platinum probe with an optimized shaft length is found enabling the enhancement of the amplitude of the scattered THz near-field signals. By coupling these effects, the topographical and THz scattering images of individual immunoglobulin G (IgG) and ferritin molecules with the size of a few nanometers are obtained, simultaneously. The demonstrated strategy thus opens new routes to imaging single biomolecules with THz.

Reconfigurable Multistate Optical Systems Enabled by VO2 Phase Transitions

Reconfigurable optical systems are the object of continuing, intensive research activities, as they hold great promise for realizing a new generation of compact, miniaturized, and flexible optical devices. However, current reconfigurable systems often tune only a single state variable triggered by an external stimulus, thus, leaving out many potential applications. Here we demonstrate a reconfigurable multistate optical system enabled by phase transitions in vanadium dioxide (VO₂). By controlling the phase-transition characteristics of VO₂ with simultaneous stimuli, the responses of the optical system can be reconfigured among multiple states. In particular, we show a quadruple-state dynamic plasmonic display that responds to both temperature tuning and hydrogen-doping. Furthermore, we introduce an electron-doping scheme to locally control the phase-transition behavior of VO₂, enabling an optical encryption device encoded by multiple keys. Our work points the way toward advanced multistate reconfigurable optical systems, which substantially outperform current optical devices in both breadth of capabilities and functionalities.

Photoinduced Broad-band Tunable Terahertz Absorber Based on a VO2 Thin Film

The demand for terahertz (THz) communication and detection fuels continuous research for high performance of THz absorption materials. In addition to varying the materials and their structure passively, an alternative approach is to modulate a THz wave actively by tuning an external stimulus. Correlated oxides are ideal materials for this because the effects of a small external control parameter can be amplified by inner electronic correlations. Here, by utilizing an unpatterned strongly correlated electron oxide VO₂ thin film, a photoinduced broad-band tunable THz absorber is realized first. The absorption, transmission, reflection, and phase of THz waves can all be actively controlled by an external pump laser above room temperature. By varying the laser fluence, the average broad-band absorption can be tuned from 18.9 to 74.7% and the average transmission can be tuned from 9.2 to 69.2%. Meanwhile, a broad-band antireflection is obtained at 5.6 mJ/cm², and a π-phase shift of a reflected THz wave is achieved when the fluence increases greater than 5.7 mJ/cm². Apart from other modulators, the photoexcitation-assisted dual-phase competition is identified as the origin of this active THz multifunctional modulation. Our work suggests that advantages of controllable phase separation in strongly correlated electron systems could provide viable routes in the creation of active optical components for THz waves.

3D Smith charts scattering parameters frequency-dependent orientation analysis and complex-scalar multi-parameter characterization applied to Peano reconfigurable vanadium dioxide inductors

Recently, the field of Metal-Insulator-Transition (MIT) materials has emerged as an unconventional solution for novel energy efficient electronic functions, such as steep slope subthermionic switches, neuromorphic hardware, reconfigurable radiofrequency functions, new types of sensors, terahertz and optoelectronic devices. Employing radiofrequency (RF) electronic circuits with a MIT material like vanadium Dioxide, VO₂, requires appropriate characterization tools and fabrication processes. In this work, we develop and use 3D Smith charts for devices and circuits having complex frequency dependences, like the ones resulting using MIT materials. The novel foundation of a 3D Smith chart involves here the geometrical fundamental notions of oriented curvature and variable homothety in order to clarify first theoretical inconsistencies in Foster and Non Foster circuits, where the driving point impedances exhibit mixed clockwise and counter-clockwise frequency dependent (oriented) paths on the Smith chart as frequency increases. We show here the unique visualization capability of a 3D Smith chart, which allows to quantify orientation over variable frequency. The new 3D Smith chart is applied as a joint complex-scalar 3D multi-parameter modelling and characterization environment for reconfigurable RF design exploiting Metal-Insulator-Transition (MIT) materials. We report fabricated inductors with record quality factors using VO₂ phase transition to program multiple tuning states, operating in the range 4 GHz to 10 GHz.

Imaging and Harnessing Percolation at the Metal-Insulator Transition of NdNiO3 Nanogaps

Competition between coexisting electronic phases in first-order phase transitions can lead to a sharp change in the resistivity as the material is subjected to small variations in the driving parameter, for example, the temperature. One example of this phenomenon is the metal-insulator transition (MIT) in perovskite rare-earth nickelates. In such systems, reducing the transport measurement area to dimensions comparable to the domain size of insulating and metallic phases around the MIT should strongly influence the shape of the resistance-temperature curve. Here we measure the temperature dependence of the local resistance and the nanoscale domain distribution of NdNiO₃ areas between Au contacts gapped by 40-260 nm. We find that a sharp resistance drop appears below the bulk MIT temperature at ∼105 K, with an amplitude inversely scaling with the nanogap width. By using X-ray photoemission electron microscopy, we directly correlate the resistance drop to the emergence and distribution of individual metallic domains at the nanogap. Our observation provides useful insight into percolation at the MIT of rare-earth nickelates.

Hyperspectral time-domain terahertz nano-imaging

Terahertz (THz) near-field microscopy has wide and unprecedented application potential for nanoscale materials and photonic-device characterization. Here, we introduce hyperspectral THz nano-imaging by combining scattering-type scanning near-field optical microscopy (s-SNOM) with THz time-domain spectroscopy (TDS). We describe the technical implementations that enabled this achievement and demonstrate its performance with a heterogeneously doped Si semiconductor sample. Specifically, we recorded a hyperspectral image of 40 by 20 pixels in 180 minutes and with a spatial resolution of about ~170 nm by measuring at each pixel with a time domain spectrum covering the range from 0.4 to 1.8 THz. Fitting the spectra with a Drude model allows for measuring-noninvasively and without the need for Ohmic contacts-the local mobile carrier concentration of the differently doped Si areas. We envision wide application potential for THz hyperspectral nano-imaging, including nanoscale carrier profiling of industrial semiconductor structures or characterizing complex and correlated electron matter, as well as low dimensional (1D or 2D) materials.

Modern Scattering-Type Scanning Near-Field Optical Microscopy for Advanced Material Research

Infrared and optical spectroscopy represents one of the most informative methods in advanced materials research. As an important branch of modern optical techniques that has blossomed in the past decade, scattering-type scanning near-field optical microscopy (s-SNOM) promises deterministic characterization of optical properties over a broad spectral range at the nanoscale. It allows ultrabroadband optical (0.5-3000 µm) nanoimaging, and nanospectroscopy with fine spatial (<10 nm), spectral (<1 cm^-1 ), and temporal (<10 fs) resolution. The history of s-SNOM is briefly introduced and recent advances which broaden the horizons of this technique in novel material research are summarized. In particular, this includes the pioneering efforts to study the nanoscale electrodynamic properties of plasmonic metamaterials, strongly correlated quantum materials, and polaritonic systems at room or cryogenic temperatures. Technical details, theoretical modeling, and new experimental methods are also discussed extensively, aiming to identify clear technology trends and unsolved challenges in this exciting field of research.

Photo-induced terahertz near-field dynamics of graphene/InAs heterostructures

In this letter, we report optical pump terahertz (THz) near-field probe (n-OPTP) and optical pump THz near-field emission (n-OPTE) experiments of graphene/InAs heterostructures. Near-field imaging contrasts between graphene and InAs using these newly developed techniques as well as spectrally integrated THz nano-imaging (THz s-SNOM) are systematically studied. We demonstrate that in the near-field regime (λ/6000), a single layer of graphene is transparent to near-IR (800 nm) optical excitation and completely "screens" the photo-induced far-infrared (THz) dynamics in its substrate (InAs). Our work reveals unique frequency-selective ultrafast dynamics probed at the near field. It also provides strong evidence that n-OPTE nanoscopy yields contrast that distinguishes single-layer graphene from its substrate.

Terahertz surface and interface emission spectroscopy for advanced materials

Surfaces and interfaces are of particular importance for optoelectronic and photonic materials as they are involved in many physical and chemical processes such as carrier dynamics, charge transfer, chemical bonding, transformation reactions and so on. Terahertz (THz) emission spectroscopy provides a sensitive and nondestructive method for surface or interface analysis of advanced materials ranging from graphene to transition metal dichalcogenides, topological insulators, hybrid perovskites, and mixed-dimensional heterostructures based on 2D materials. In this review paper, we start with the THz radiation mechanisms under ultrafast laser excitation. Then we concentrate on the recent progresses of THz emission spectroscopy on the surface and interface properties of advanced materials, including transient surface photocurrents, surface nonlinear polarization, surface states, interface potential, and gas molecule adsorption/desorption processes. This novel spectroscopic method can not only promote the development of new and compact THz sources, but also provide a nondestructive optical method for surface and interface characterization of photocurrent and nonlinear polarization dynamics of materials.