Single crystal hybrid perovskite field-effect transistors

Day-Night imaging without Infrared Cutfilter removal based on metal-gradient perovskite single crystal photodetector

Day-Night imaging technology that obtains full-color and infrared images has great market demands for security monitoring and autonomous driving. The current mainstream solution relies on wide-spectrum silicon photodetectors combined with Infrared Cutfilter Removal, which increases complexity and failure rate. Here, we address these challenges by employing a perovskite photodetector based on Pb-Sn alloyed single crystal with a vertical bandgap-graded structure that presents variable-spectrum responses at different biases and extends the infrared detection range close to 1100 nm. Taking advantage of the Pb-Sn gradients in mobility and built-in field, the perovskite photodetector shows a large linear dynamic range of 177 dB. In addition, the optoelectronic characteristics feature long-term operational stability over a year. We further develop an imaging module prototype without Infrared Cutfilter Removal that exhibits excellent color fidelity with RGB color differences ranging from 0.48 to 2.46 under infrared interference and provides over 26-bit grayscale resolution in infrared imaging.

Mapping and Characterization of Local Structures of CsPbBr3

Inorganic perovskite CsPbBr3 is a promising material for optoelectronic applications and high-energy radiation detection due to its excellent photophysical properties, high carrier mobility, large carrier diffusion length, and higher stability than organic perovskite materials. Understanding phase transitions at the atomic level is crucial for optimizing its applications. Here, we employ experimental characterizations and molecular dynamics simulations to study the phase transitions in CsPbBr3 as a function of temperature. The simulation results are compared with the experimental results, which include X-ray diffraction (XRD). Our simulations provide new insights into the electronic structure and dynamic behavior of the Cs, Pb, and Br atoms as a function of temperature. We observe distinct phase transitions from monoclinic to cubic and analyze the associated changes in the local environment through atomic density contour maps. Our analysis of the atomic density distributions of the Pb, Br, and Cs atoms provides information about the crystal symmetry as a function of temperature. The tilt and rotation angles of [PbBr6] octahedra are increasing with the temperature increase and are found nonzero above 410 K when the structure is cubic, exhibiting the presence of dynamic tilting. Overall, our findings shed light on the thermal stability and structural dynamics of CsPbBr3, contribute to the fundamental understanding of its phase behavior, and provide a crucial pivot for guiding the design of next-generation optoelectronic and radiation detection devices.

Building High-Density Polar Hybrid Perovskites via Intercalation of Cs+ and Aromatic Diamine for Passive X-ray Detection

2D organic-inorganic hybrid perovskites (OIHPs) have shown great promise in direct X-ray detection. The development of high-performance passive X-ray detectors in 2D OIHPs calls for an increase in material density while maintaining structural polarity, which is becoming quite challenging. Here, a high-density, polar 2D alternating-cation-intercalated (ACI) perovskite, (4-AP)Cs2Pb2I8 (B, 4-AP = 4-amidinopyridinium), capable of addressing this problem is successfully constructed by introducing heavy Cs+ into the interlayer space of an aromatic Dion-Jacobson (DJ) perovskite (4-AP)PbI4 (A). Through such a DJ-to-ACI design, the newly developed 2D OIHP B not only significantly increases its density to 4.23 g cm-3 (even higher than that of 3D MAPbI3) but also crystallizes in a polar space group (Ama2), which further leads to enhanced X-ray attenuation and an obvious polar photovoltage (1.1 V) under X-ray irradiation. As a result, X-ray detectors fabricated by high-quality single crystals of B exhibit excellent and stable detection performance under self-powered mode with a high sensitivity of 107 μC Gy-1 cm-2 and a low detection limit of 289 nGy s-1. This work provides implications for the future exploration and regulation of novel ACI OIHPs for high-performance photoelectronic devices.

Precise arraying of perovskite single crystals through droplet-assisted self-alignment

Patterned arrays of perovskite single crystals can avoid signal cross-talk in optoelectronic devices, while precise crystal distribution plays a crucial role in enhancing device performance and uniformity, optimizing photoelectric characteristics, and improving optical management. Here, we report a strategy of droplet-assisted self-alignment to precisely assemble the perovskite single-crystal arrays (PSCAs). High-quality single-crystal arrays of hybrid methylammonium lead bromide (MAPbBr3) and methylammonium lead chloride (MAPbCl3), and cesium lead bromide (CsPbBr3) can be precipitated under a formic acid vapor environment. The crystals floated within the suspended droplets undergo movement and rotation for precise alignment. The strategy allows us to deposit PSCAs with a pixel size range from 200 to 500 micrometers on diverse substrates, including indium tin oxide, glass, quartz, and poly(dimethylsiloxane), and the area can reach up to 10 centimeters by 10 centimeters. The PSCAs exhibit excellent photodetector performance with a large responsivity of 24 amperes per watt.

Functionalization and Structural Evolution of Conducting Quasi-One-Dimensional Chevrel-Type Telluride Nanocrystals

Interfacing organic molecular groups with well-defined inorganic lattices, especially in low dimensions, enables synthetic routes for the rational manipulation of both their local or extended lattice structures and physical properties. While appreciably studied in two-dimensional systems, the influence of surface organic substituents on many known and emergent one-dimensional (1D) and quasi-1D (q-1D) crystals has remained underexplored. Herein, we demonstrate the surface functionalization of bulk and nanoscale Chevrel-like q-1D ionic crystals using In2Mo6Te6, a predicted q-1D Dirac semimetal, as the model phase. Using a series of alkyl ammonium (-NR4+; R = H, methyl, ethyl, butyl, and octyl) substituents with varying chain lengths, we demonstrate the systematic expansion of the intrachain c-axis direction and the contraction of the interchain a/b-axis direction with longer chain substituents. Additionally, we demonstrate the systematic expansion of the intrachain c-axis direction and the contraction of the interchain a/b-axis direction as the alkyl chain substituents become longer using a combination of powder X-ray diffraction and Raman experiments. Beyond the structural modulation that the substituted groups can impose on the lattice, we also found that the substitution of ammonium-based groups on the surface of the nanocrystals resulted in selective suspension in aqueous (NH4+-functionalized) or organic solvents (NOc4+-functionalized), imparted fluorescent character (Rhodamine B-functionalized), and modulated the electrical conductivity of the nanocrystal ensemble. Altogether, our results underscore the potential of organic-inorganic interfacing strategies to tune the structural and physical properties of rediscovered Chevrel-type q-1D ionic solids and open opportunities for the development of surface-addressable building blocks for hybrid electronic and optoelectronic devices at the nanoscale.

Enhancing Stability and Performance in Tin-Based Perovskite Field-Effect Transistors Through Hydrogen Bond Suppression of Organic Cation Migration

Ion migration poses a substantial challenge in perovskite transistors, exerting detrimental effects on hysteresis and operational stability. This study focuses on elucidating the influence of ion migration on the performance of tin-based perovskite field-effect transistors (FETs). It is revealed that the high background carrier density in FASnI3 FETs arises not only from the oxidation of Sn2+ but also from the migration of FA+ ions. The formation of hydrogen bonding between FA+ and F- ions efficiently inhibits ion migration, leading to a reduction in background carrier density and an improvement in the operational stability of the transistors. The strategy of hydrogen bond is extended to fluorine-substituted additives to improve device performance. The incorporation of 4-fluorophenethylammonium iodide additives into FETs significantly minimizes the shift of turn-on voltage during cyclic measurements. Notably, an effective mobility of up to 30 cm2 V-1 s-1 with an Ion/off ratio of 107 is achieved. These findings hold promising potential for advancing tin-based perovskite technology in the field of electronics.

Alkylammonium Halides for Phase Regulation and Luminescence Modulation of Cesium Copper Iodide Nanocrystals for Light-Emitting Diodes

All-inorganic cesium copper halide nanocrystals have attracted extensive attention due to their cost-effectiveness, low toxicity, and rich luminescence properties. However, controlling the synthesis of these nanocrystals to achieve a precise composition and high luminous efficiency remains a challenge that limits their future application. Herein, we report the effect of oleylammonium iodide on the synthesis of copper halide nanocrystals to control the composition and phase and modulate their photoluminescence (PL) quantum yields (QYs). For CsCu2I3, the PL peak is centered at 560 nm with a PLQY of 47.3%, while the PL peak of Cs3Cu2I5 is located at 440 nm with an unprecedently high PLQY of 95.3%. Furthermore, the intermediate-state CsCu2I3/Cs3Cu2I5 heterostructure shows white light emission with a PLQY of 66.4%, chromaticity coordinates of (0.3176, 0.3306), a high color rendering index (CRI) of 90, and a correlated color temperature (CCT) of 6234 K, indicating that it is promising for single-component white-light-emitting applications. The nanocrystals reported in this study have excellent luminescence properties, low toxicity, and superior stability, so they are more suitable for future light-emitting applications.

Volume-Confined Fabrication of Large-Scale Single-Crystalline Molecular Ferroelectric Thin Films and Their Applications in 2D Materials

With outstanding advantages of chemical synthesis, structural diversity, and mechanical flexibility, molecular ferroelectrics have attracted increasing attention, demonstrating themselves as promising candidates for next-generation wearable electronics and flexible devices in the film form. However, it remains a challenge to grow high-quality thin films of molecular ferroelectrics. To address the above issue, a volume-confined method is utilized to achieve ultrasmooth single-crystal molecular ferroelectric thin films at the sub-centimeter scale, with the thickness controlled in the range of 100-1000 nm. More importantly, the preparation method is applicable to most molecular ferroelectrics and has no dependency on substrates, showing excellent reproducibility and universality. To demonstrate the application potential, two-dimensional (2D) transitional metal dichalcogenide semiconductor/molecular ferroelectric heterostructures are prepared and investigated by optical spectroscopic method, proving the possibility of integrating molecular ferroelectrics with 2D layered materials. These results may unlock the potential for preparing and developing high-performance devices based on molecular ferroelectric thin films.

Free Halogen Substitution of Chiral Hybrid Metal Halides for Activating the Linear and Nonlinear Chiroptical Properties

Halogen substitution has been proven as an effective approach to the band gap engineering and optoelectronic modulation of organic-inorganic hybrid metal halide (OIHMH) materials. Various high-performance mixed halide OIHMH film materials have been primarily obtained through the substitution of coordinated halogens in their inorganic octahedra. Herein, we propose a new strategy of substitution of free halogen outside the inorganic octahedra for constructing mixed halide OIHMH single crystals with chiral structures, resulting in a boost of their linear and nonlinear chiroptical properties. The substitution from DMA4[InCl6]Cl (DMA = dimethylammonium) to DMA4[InCl6]Br crystals through a facile antisolvent vaporization method produces centimeter-scale single crystals with high thermal stability along with high quantum yield photoluminescence, conspicuous circularly polarized luminescence, and greatly enhanced second harmonic generation (SHG). In particular, the obtained DMA4[InCl6]Br single crystal features an intrinsic chiral structure, exhibiting a significant SHG circular dichroism (SHG-CD) response with a highest reported anisotropy factor (gSHG-CD) of 1.56 among chiral OIHMH materials. The enhancements in both linear and nonlinear chiroptical properties are directly attributed to the modulation of octahedral distortion. The mixed halide OIHMH single crystals obtained by free halogen substitution confine the introduced halogens within free halogen sites of the lattice, thereby ensuring the stability of compositions and properties. The successful employment of such a free halogen substitution approach may broaden the horizon of the regulation of structures and the optoelectronic properties of the OIHMH materials.

Oriented Perovskite Film from Laser Recrystallization in Magnetic Field

The orientation of crystals on the substrate and the presence of defects are critical factors in electro-optic performance. However, technical approaches to guide the orientational crystallization of electro-optical thin films remain challenging. Here, a novel physical method called magnetic-field-assisted pulse laser annealing (MAPLA) for controlling the orientation of perovskite crystals on substrates is reported. By inducing laser recrystallization of perovskite crystals under a magnetic field and with magnetic nanoparticles, the optical and magnetic fields are found to guide the orientational gathering of perovskite units into nanoclusters, resulting in perovskite crystals with preferred lattice orientation in (110) and (220) perpendicular to the substrate. The perovskite crystals obtained by MAPLA exhibit significantly larger grain size and fewer defects compared to those from pulsed laser annealing (PLA) and traditional thermal annealing, resulting in improved carrier lifetime and mobility. Furthermore, MAPLA demonstrates enhanced device performance, increasing responsivity and detectivity by two times, and photocurrent by nearly three orders compared with PLA. The introduction of Fe2 O3 nanoparticles during MAPLA not only improves crystal size and orientation but also significantly enhances long-term stability by preventing Pb2+ reduction. The MAPLA method has great potential for fabricating many electro-optical thin films with desired device properties and stability.

Composition Dependent Strain Engineering of Lead-Free Halide Double Perovskite: Computational Insights

The critical photophysical properties of lead-free halide double perovskites (HDPs) must be substantially improved for various applications. In this regard, strain engineering is a powerful tool for enhancing optoelectronic performance with precise control. Here, we employ ab initio simulations to investigate the impact of mild compressive and tensile strains on the photophysics of Cs2AgB'X6 (B' = Sb, Bi; X = Cl, Br) perovskites. Depending on the pnictogen and halide atoms, the band gap and band edge positions of HDPs can be tuned to a significant extent by controlling the applied external strain. Cs2AgSbBr6 has the most substantial strain response under structural perturbations. The subtle electronic interactions among the participating orbitals and the band dispersion at the edge states are enhanced under compressive strain, reducing the carrier effective masses. The exciton binding energies for these Br-based HDPs are in the range 59-78 meV and weaken in the compressed lattices, suggesting improved free carrier generation. Overall, the study emphasizes the potential of lattice strain engineering to boost the photophysical properties of HDPs that can ultimately improve their optoelectronic performance.

Towards high photoresponse of perovskite nanowire/copper phthalocyanine heterostructured photodetector

One-dimensional nanowire structures composed of perovskite are widely recognized for their exceptional optoelectronic performance and mechanical properties, making them a popular area of investigation in photodetection research. In this work, a perovskite nanowire/copper phthalocyanine heterojunction-based photodetector was fabricated, which exhibits high photoresponse in the visible-near-infrared region. The incorporation of a heterojunction significantly enhanced the photoelectric performance. Specifically, the photoresponsivity and external quantum efficiency of the nanowire-based device were elevated from 58.5 A W-1and 1.35 × 104% to 84.5 A W-1and 1.97 × 104% at 532 nm, respectively. The enhanced photoresponse of the heterojunction device can be attributed to the unique microstructure of nanowire arrays. The wrapping of the nanowires by copper phthalocyanine forms heterojunctions with a larger dissociation area, which facilitated exciton dissociation and enhanced device performance. This work provides a promising example for optimizing the performance of nanowire devices.

Optical Memory, Switching, and Neuromorphic Functionality in Metal Halide Perovskite Materials and Devices

Metal halide perovskite based materials have emerged over the past few decades as remarkable solution-processable optoelectronic materials with many intriguing properties and potential applications. These emerging materials have recently been considered for their promise in low-energy memory and information processing applications. In particular, their large optical cross-sections, high photoconductance contrast, large carrier-diffusion lengths, and mixed electronic/ionic transport mechanisms are attractive for enabling memory elements and neuromorphic devices that are written and/or read in the optical domain. Here, recent progress toward memory and neuromorphic functionality in metal halide perovskite materials and devices where photons are used as a critical degree of freedom for switching, memory, and neuromorphic functionality is reviewed.

Perovskite single-crystal thin films: preparation, surface engineering, and application

Perovskite single-crystal thin films (SCTFs) have emerged as a significant research hotspot in the field of optoelectronic devices owing to their low defect state density, long carrier diffusion length, and high environmental stability. However, the large-area and high-throughput preparation of perovskite SCTFs is limited by significant challenges in terms of reducing surface defects and manufacturing high-performance devices. This review focuses on the advances in the development of perovskite SCTFs with a large area, controlled thickness, and high quality. First, we provide an in-depth analysis of the mechanism and key factors that affect the nucleation and crystallization process and then classify the methods of preparing perovskite SCTFs. Second, the research progress on surface engineering for perovskite SCTFs is introduced. Third, we summarize the applications of perovskite SCTFs in photovoltaics, photodetectors, light-emitting devices, artificial synapse and field-effect transistor. Finally, the development opportunities and challenges in commercializing perovskite SCTFs are discussed.

Optoelectronic Devices of Large-Scale Transferred All-Inorganic Lead Halide Perovskite Thin Films

We report the large-scale transfer process for monocrystalline CsPbBr₃ thin films prepared by chemical vapor deposition (CVD) with excellent optical properties and stability. The transfer process is robust, simple, and effective, in which CsPbBr₃ thin films could be transferred to several substrates and effectively avoid chemical or physical fabrication processes to damage the perovskite surface. Moreover, the transfer process endows CsPbBr₃ and substrates with atomically clean and electronically flat interfaces. We utilize this transfer process to realize several optoelectronic devices, including a photonic laser with a threshold of 61 μJ/cm², a photodetector with a responsivity of 2.4 A/W, and a transistor with a hole mobility of 11.47 cm² V^-1 s^-1. High device performances mainly originate from low defects of high-quality single-crystal perovskite and seamless contact between CsPbBr₃ and target substrates. The large-scale nondestructive transfer process provides promising opportunities for optoelectronic applications based on monocrystalline perovskites.

Insight into efficient photoluminescence regulation mechanism by lattice distortion and Mn2+ doping in organic-inorganic hybrid perovskites

The space configurations of organic ammonium cations play a vital role in indirectly revealing the relationship between the structures and photoluminescence properties. Structural transformation induced tunability of the photophysical properties has rarely been reported. In this work, two organic-inorganic halide perovskites with different octahedral distortions were synthesized to explore the relationships between "steric effect" of organic cations and photoluminescence properties. The broadband emission of (DETA)PbBr₅·H₂O with high octahedral distortion is attributed to self-trapped excitons and trap states, whereas smaller steric hindrance ammonium cation 1,4-butanediamine form a 2D layered perovskite with narrowband emission due to free excitons. More importantly, the photoactive metal ions Mn²⁺ doping strategy gives rise to tunable broadband light emission from weak to strong orange emission with higher PLQY up to 20.96 % and 12.90% in 0D (DETA)Pb_0.2Mn_0.8Br₅·H₂O and 2D (BDA)Pb_0.8Mn_0.2Br₄ respectively. Combined with time-correlated single photon counting and photoluminescence spectra, Mn-doped perovskites reveal energy transfer from host to Mn²⁺ characteristic energy level (⁴T₁-⁶A₁). Importantly, defect states are reduced by doping manganese ions in (DETA)PbBr₅·H₂O to enhance photoluminescence intensity. This work sheds light on the mechanism of defect-related emission and provides a successful strategy for designing novel and adjustable materials.

Ferroelectric Wide-Bandgap Metal Halide Perovskite Field-Effect Transistors: Toward Transparent Electronics

Transparent field-effect transistors (FETs) are attacking intensive interest for constructing fancy "invisible" electronic products. Presently, the main technology for realizing transparent FETs is based on metal oxide semiconductors, which have wide-bandgap but generally demand sputtering technique or high-temperature (>350 °C) solution process for fabrication. Herein, a general device fabrication strategy for metal halide perovskite (MHP) FETs is shown, by which transparent perovskite FETs are successfully obtained using low-temperature (<150 °C) solution process. This strategy involves the employment of ferroelectric copolymer poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) as the dielectric, which conquers the challenging issue of gate-electric-field screening effect in MHP FETs. Additionally, an ultra-thin SnO₂ is inserted between the source/drain electrodes and MHPs to facilitate electron injection. Consequently, n-type semi-transparent MAPbBr₃ FETs and fully transparent MAPbCl₃ FETs which can operate well at room temperature with mobility over 10^-3  cm²  V^-1  s^-1 and on/off ratio >10³ are achieved for the first time. The low-temperature solution processability of these FETs makes them particularly attractive for applications in low-cost, large-area transparent electronics.

Controlled on-chip fabrication of large-scale perovskite single crystal arrays for high-performance laser and photodetector integration

Metal halide perovskites possess intriguing optoelectronic properties, however, the lack of precise control of on-chip fabrication of the large-scale perovskite single crystal arrays restricts its application in integrated devices. Here, we report a space confinement and antisolvent-assisted crystallization method for the homogeneous perovskite single crystal arrays spanning 100 square centimeter areas. This method enables precise control over the crystal arrays, including different array shapes and resolutions with less than 10%-pixel position variation, tunable pixel dimensions from 2 to 8 μm as well as the in-plane rotation of each pixel. The crystal pixel could serve as a high-quality whispering gallery mode (WGM) microcavity with a quality factor of 2915 and a threshold of 4.14 μJ cm^-2. Through directly on-chip fabrication on the patterned electrodes, a vertical structured photodetector array is demonstrated with stable photoswitching behavior and the capability to image the input patterns, indicating the potential application in the integrated systems of this method.

Excessive Iodine Enabled Ultrathin Inorganic Perovskite Growth at the Liquid-Air Interface

The liquid-air interface offers a platform for the in-plane growth of free-standing materials. However, it is rarely used for inorganic perovskites and ultrathin non-layered perovskites. Herein the liquid-air interfacial synthesis of inorganic perovskite nanosheets (Cs₃ Bi₂ I₉ , Cs₃ Sb₂ I₉ ) is achieved simply by drop-casting the precursor solution with only the addition of iodine. The products are inaccessible without iodine addition. The thickness and lateral size of these nanosheets can be adjusted through the iodine concentration. The high volatility of the iodine spontaneously drives precursors that normally stay in the liquid to the liquid-air interface. The iodine also repairs in situ iodine vacancies during perovskite growth, giving enhanced optical and optoelectronic properties. The liquid-air interfacial growth of ultrathin perovskites provides multi-degree-of-freedom for constructing perovskite-based heterostructures and devices at atomic scale.

New Approaches to Produce Large-Area Single Crystal Thin Films

Wafer-scale growth of single crystal thin films of metals, semiconductors, and insulators is crucial for manufacturing high-performance electronic and optical devices, but still challenging from both scientific and industrial perspectives. Recently, unconventional advanced synthetic approaches have been attempted and have made remarkable progress in diversifying the species of producible single crystal thin films. This review introduces several new synthetic approaches to produce large-area single crystal thin films of various materials according to the concepts and principles.

Stable and efficient soft perovskite crystalline film based solar cells prepared with a facile encapsulation method

The quasi Fermi level for electrons in a soft perovskite crystalline thin film and the contact qualities at the PCBM/perovskite and perovskite/P3CT-Na interfaces can be increased using a facile encapsulation method, which improves the device performance and stability of the resultant perovskite solar cells. In the encapsulated perovskite solar cells, the averaged open-circuit voltage (V_OC) largely increases from 0.981 V to 1.090 V after 9 days mainly due to the increased quasi Fermi levels. Besides, the reflectance and photoluminescence (PL) spectra show improved contact qualities at the PCBM/perovskite and perovskite/P3CT-Na interfaces, which can be used to explain the increase in the short-circuit current density (J_SC) from 21.68 mA cm^-2 to 23.48 mA cm^-2 after the encapsulation process. Besides, nanosecond time-resolved PL and temperature-dependent PL spectra can be used to explain the increased V_OC, which is mainly due to the increased shallow defect density and thereby increasing the exciton binding energy of the encapsulated perovskite sample. It is noted that the averaged power conversion efficiency (PCE) slowly decreases from 18.24% to 16.52% within 45 days.

Spin Selectivity in Chiral Hybrid Cobalt Halide Films with Ultrasmooth Surface

Introducing chirality into low-dimensional hybrid organic-inorganic halides (HOIHs) creates brand-new opportunities for HOIHs in spintronics and spin-related optoelectronics owing to chirality-induced spin selectivity (CISS). However, preparing smooth films of low-dimensional HOIHs with small roughness is still a great challenge due to the hybrid and complex crystal structure, which severely inhibits their applications in spintronic devices. Exploring new lead-free chiral HOIHs with both efficient spin selectivity and excellent film quality is urgently desired. Here, cobalt-based chiral metal halide crystals (R/S-NEA)₂ CoCl₄ constructed by 0D [CoCl₄ ] tetrahedrons and 1-(1-naphtyl)ethylamine (NEA) are synthesized. The orderly configuration of NEA molecules stabilized by noncovalent CH···π interaction endows (NEA)₂ CoCl₄ with good film-forming ability. (NEA)₂ CoCl₄ films exhibit strong chiroptical activity (g_CD  ≈ 0.05) and significant spin-polarized transport (CISS efficiency up to 90%). Furthermore, ultrasmooth films (roughness ∼ 0.3 nm) with enhanced crystallinity can be achieved by incorporating tiny amount tris(8-oxoquinoline)aluminum that has analogous conjugated structure to NEA. The realization of highly efficient spin selectivity and sub-nanometer roughness in lead-free chiral halides can boost the practical process of low-dimensional HOIHs in spintronics and other fields.

Metal Halide Perovskite/Electrode Contacts in Charge-Transporting-Layer-Free Devices

Metal halide perovskites have drawn substantial interest in optoelectronic devices in the past decade. Perovskite/electrode contacts are crucial for constructing high-performance charge-transporting-layer-free perovskite devices, such as solar cells, field-effect transistors, artificial synapses, memories, etc. Many studies have evidenced that the perovskite layer can directly contact the electrodes, showing abundant physicochemical, electronic, and photoelectric properties in charge-transporting-layer-free perovskite devices. Meanwhile, for perovskite/metal contacts, some critical interfacial physical and chemical processes are reported, including band bending, interface dipoles, metal halogenation, and perovskite decomposition induced by metal electrodes. Thus, a systematic summary of the role of metal halide perovskite/electrode contacts on device performance is essential. This review summarizes and discusses charge carrier dynamics, electronic band engineering, electrode corrosion, electrochemical metallization and dissolution, perovskite decomposition, and interface engineering in perovskite/electrode contacts-based electronic devices for a comprehensive understanding of the contacts. The physicochemical, electronic, and morphological properties of various perovskite/electrode contacts, as well as relevant engineering techniques, are presented. Finally, the current challenges are analyzed, and appropriate recommendations are put forward. It can be expected that further research will lead to significant breakthroughs in their application and promote reforms and innovations in future solid-state physics and materials science.

Structural Dimensionality Dependence of the Band Gap in An+1BnX3n+1 Ruddlesden-Popper Perovskites: A Global Picture

Dimensionality engineering in A_n+1B_nX_3n+1 Ruddlesden-Popper (RP) perovskites has recently emerged as a promising tool for tuning the band gap to improve optoelectronic properties. However, the evolution of the band gap is dependent on the material; distinguishing the effects of different factors is urgently needed to guide the rational design of high-performance materials. Through first-principles calculations, we perform a systematic investigation of RP oxide, chalcogenide, and halide perovskites. The results reveal that in addition to the confinement effect and the change in octahedral rotation motions and/or amplitudes, interfacial rumpling and a change in the A-site cation coordination number also determine the evolution of the band gap. More importantly, we emphasize that the evolution of the band gap in RP perovskites is not dependent on the material family. Instead, the B-site frontier orbital type (s, p, and d) and bandwidth, A-site cation, interfacial rumpling, and structural distortions simultaneously determine the evolution of the band gap. These insights enable a complete and deeper understanding of various experimental observations.

First-Principles Calculations to Investigate the Effect of Van der Waals Interactions on the Crystal and Electronic Structures of Tin-Based 0D Hybrid Perovskites

The electronic structures of four tin-based 0D hybrid perovskites ((NH3(CH2)2C6H5)2[SnCl6], (C6H10N2)[SnCl6], (C9H14N)2[SnCl6], and (C8H12N)2[SnCl6]) were determined by the DFT method employing the pseudopotential plane wave as implemented in the CASTEP code, and the first transition in each compound has been investigated based on the partial density states and dielectric function. According to the structural properties, incorporating organic cations with the appropriate structure, shape, and strong H-bonding functionality into hybrid perovskite crystals is very beneficial for preventing ion migration and thus enhances the efficiency of hybrid perovskite-based devices. Based on those properties employing the DFT+D method for the dispersion force, the effect of Van der Waals interaction on electronic structure was explained based on the nature of the first electronic transition. The similarity between the experimental and optimized structure was investigated by using a Bilbao crystallographic server. The study of optical properties shows that the Van der Waals interactions have a slight effect on the energy level of the curves. However, the profiles of curves are conserved. The absorption curves of the researched compounds are elaborated.

Low-Dimensional Metal-Halide Perovskites as High-Performance Materials for Memory Applications

Metal-halide perovskites have drawn profuse attention during the past decade, owing to their excellent electrical and optical properties, facile synthesis, efficient energy conversion, and so on. Meanwhile, the development of information storage technologies and digital communications has fueled the demand for novel semiconductor materials. Low-dimensional perovskites have offered a new force to propel the developments of the memory field due to the excellent physical and electrical properties associated with the reduced dimensionality. In this review, the mechanisms, properties, as well as stability and performance of low-dimensional perovskite memories, involving both molecular-level perovskites and structure-level nanostructures, are comprehensively reviewed. The property-performance correlation is discussed in-depth, aiming to present effective strategies for designing memory devices based on this new class of high-performance materials. Finally, the existing challenges and future opportunities are presented.

Emerging Synthesis Strategies of 2D MOFs for Electrical Devices and Integrated Circuits

The development of advanced electronic devices is boosting many aspects of modern technology and industry. The ever-increasing demand for advanced electrical devices and integrated circuits calls for the design of novel materials, with superior properties for the improvement of working performance. In this review, a detailed overview of the synthesis strategies of 2D metal organic frameworks (MOFs) acquiring growing attention is presented, as a basis for expansion of novel key materials in electrical devices and integrated circuits. A framework of controllable synthesis routes to be implanted in the synthesis strategies of 2D materials and MOFs is described. In short, the synthesis methods of 2D MOFs are summarized and discussed in depth followed by the illustrations of promising applications relating to various electrical devices and integrated circuits. It is concluded by outlining how 2D MOFs can be synthesized in a simpler, highly efficient, low-cost, and more environmentally friendly way which can open up their applicable opportunities as key materials in advanced electrical devices and integrated circuits, enabling their use in broad aspects of the society.

Review on Perovskite Semiconductor Field-Effect Transistors and Their Applications

Perovskite materials are considered as the most alluring successor to the conventional semiconductor materials to fabricate solar cells, light emitting diodes and electronic displays. However, the use of the perovskite semiconductors as a channel material in field effect transistors (FET) are much lower than expected due to the poor performance of the devices. Despite low attention, the perovskite FETs are used in widespread applications on account of their unique opto-electrical properties. This review focuses on the previous works on perovskite FETs which are summarized into tables based on their structures and electrical properties. Further, this review focuses on the applications of perovskite FETs in photodetectors, phototransistors, light emitting FETs and memory devices. Moreover, this review highlights the challenges faced by the perovskite FETs to meet the current standards along with the future directions of these FETs. Overall, the review summarizes all the available information on existing perovskite FET works and their applications reported so far.

Electrode Spacing as a Determinant of the Output Performance of Planar-Type Photodetectors Based on Methylammonium Lead Bromide Perovskite Single Crystals

Methylammonium lead bromide is a very perspective hybrid semiconductor material, suitable for high-sensitive, filter-free photodetection of electromagnetic radiation. Herein, we studied the effect of electrode spacing on the output performance and stability of planar-type photodetectors based on high-quality MAPbBr₃ single crystals. Such crystals, as large as 4.5×4.5×1.2 mm³ were synthesized via the inverse temperature crystallization method and were further used for the fabrication of planar Au/MAPbBr₃/Au photodetectors with variable electrode spacing (in the range between 125 and 25 μm). We report that the electrode spacing has a profound impact on photocurrent densities and key detector parameters (responsivity R, external quantum efficiency EQE, and specific detectivity D*). In the studied fivefold electrode spacing, the photocurrent density increased over 4 times, with decreasing active area of the devices. This effect is attributed to intrinsic photocurrent amplification. Based on the transient photocurrent measurements and calculated key parameters, we determined the device sample with the best output performance. The champion sample with an electrode spacing of 50 μm exhibited great detection ability, especially for a low light intensity of 200 nWcm^-2, for which we calculated the R of 19.55 A W^-1, EQE of 4253%, and D* of 3.42 × 10¹² Jones (cm Hz^1/2 W^-1). Moreover, the functional stability of this device showed a minimal reduction of photodetection ability after 2000 cycles, which makes it very promising for the next generation of optoelectronic devices.

Electrode Engineering in Halide Perovskite Electronics: Plenty of Room at the Interfaces

Contact engineering is a prerequisite for achieving desirable functionality and performance of semiconductor electronics, which is particularly critical for organic-inorganic hybrid halide perovskites due to their ionic nature and highly reactive interfaces. Although the interfaces between perovskites and charge-transporting layers have attracted lots of attention due to the photovoltaic and light-emitting diode applications, achieving reliable perovskite/electrode contacts for electronic devices, such as transistors and memories, remains as a bottleneck. Herein, a critical review on the elusive nature of perovskite/electrode interfaces with a focus on the interfacial electrochemistry effects is presented. The basic guidelines of electrode selection are given for establishing non-polarized interfaces and optimal energy level alignment for perovskite materials. Furthermore, state-of-the-art strategies on interface-related electrode engineering are reviewed and discussed, which aim at achieving ohmic transport and eliminating hysteresis in perovskite devices. The role and multiple functionalities of self-assembled monolayers that offer a unique approach toward improving perovskite/electrode contacts are also discussed. The insights on electrode engineering pave the way to advancing stable and reliable perovskite devices in diverse electronic applications.

Doping MAPbBr3 hybrid perovskites with CdSe/CdZnS quantum dots: from emissive thin films to hybrid single-photon sources

We report the first doping of crystalline methyl-ammonium lead bromide perovskite (MAPbBr₃) films with CdSe/CdZnS core/shell quantum dots (QDs), using a soft-chemistry approach that preserves their high quantum yield and other remarkable luminescence properties. Our approach produces MAPbBr₃ films of around 100 nm thickness, doped at volume ratios between 0.01 and 1% with colloidal CdSe/CdZnS QDs whose organic ligands were exchanged with halide ions to allow for close contact between the QDs and the perovskite matrix. Ensemble photoluminescence (PL) measurements demonstrate the retained emission of the QDs after incorporation into the MAPbBr₃ matrix. Photoluminescence excitation (PLE) spectra exhibit signatures of wavelength-dependent coupling between the CdSe/CdZnS QDs and the MAPbBr₃ matrix, i.e., a transfer of charges from matrix to QD, which increases the QD luminescence by up to 150%, or from QD to matrix. Spatially-resolved PL experiments reveal a strong correlation between the positions of QDs and an enhancement of the PL signal of the matrix. Lifetime imaging of the doped films furthermore shows that the emission lifetime of MAPbBr₃ is slower in the vicinity of QDs, which, in combination with the increased PL signal of the matrix, suggests that QDs can act as local nucleation seeds that improve the crystallinity of MAPbBr₃, thus boosting its emission quantum yield. Luminescence antibunching measurements provide clear evidence of single-photon emission from individual QDs in perovskite. Finally, the analysis of blinking statistics indicates an improvement of the photostability of individual QDs in perovskite as compared to bare CdSe/CdZnS QDs. At high CdSe/CdZnS QD doping levels, this work thus opens a route to hybrid solar concentrators for visible-light harvesting and hybrid-based LEDs, while a low degree of doping could yield hybrid single-photon sources than can be embedded in field-effect devices for single-charge control, which would allow the construction of nanophotonic devices via low-cost solution-processing techniques as an alternative to solid-state quantum dots.

High-performance hysteresis-free perovskite transistors through anion engineering

Despite the impressive development of metal halide perovskites in diverse optoelectronics, progress on high-performance transistors employing state-of-the-art perovskite channels has been limited due to ion migration and large organic spacer isolation. Herein, we report high-performance hysteresis-free p-channel perovskite thin-film transistors (TFTs) based on methylammonium tin iodide (MASnI₃) and rationalise the effects of halide (I/Br/Cl) anion engineering on film quality improvement and tin/iodine vacancy suppression, realising high hole mobilities of 20 cm² V^-1 s^-1, current on/off ratios exceeding 10⁷, and threshold voltages of 0 V along with high operational stabilities and reproducibilities. We reveal ion migration has a negligible contribution to the hysteresis of Sn-based perovskite TFTs; instead, minority carrier trapping is the primary cause. Finally, we integrate the perovskite TFTs with commercialised n-channel indium gallium zinc oxide TFTs on a single chip to construct high-gain complementary inverters, facilitating the development of halide perovskite semiconductors for printable electronics and circuits.

Miniaturized Multispectral Detector Derived from Gradient Response Units on Single MAPbX3 Microwire

Miniaturized multispectral detectors are urgently desired given the unprecedented prosperity of smart optoelectronic chips for integrated functions including communication, imaging, scientific analysis, etc. However, multispectral detectors require complicated prism optics or interference/interferometric filters for spectral recognition, which hampers the miniaturization and their subsequent integration in photonic integrated circuits. In this work, inspired by the advance of computational imaging, optical-component-free miniaturized multispectral detector on 4 mm gradient bandgap MAPbX₃ microwire with a diameter of 30 µm, is reported. With accurate composition engineering, halide ions in MAPbX₃ microwire vary from Cl to I giving in the gradual variation of optical bandgap from 2.96 to 1.68 eV along axis. The sensing units on MAPbX₃ microwire offer the response edge ranging from 450 to 790 nm with the responsivity over 20 mA W^-1 , -3dB width over 450 Hz, LDR of ≈60 dB, and a noise current less than ≈1.4 × 10^-12 A Hz^-0.5 . As a result, the derived miniaturized detector achieves the function of multispectral sensing and discrimination with spectral resolution of ≈25 nm and mismatch of ≈10 nm. Finally, the proof-of-concept colorful imaging is successfully conducted with the miniaturized multispectral detector to further confirm its application in spectral recognition.

A Universal Cosolvent Evaporation Strategy Enables Direct Printing of Perovskite Single Crystals for Optoelectronic Device Applications

Solution-processed metal halide perovskite (MHP) single crystals (SCs) are in high demand for a growing number of printed electronic applications due to their superior optoelectronic properties compared to polycrystalline thin films. There is an urgent need to make SC fabrication facile, scalable, and compatible with the printed electronic manufacturing infrastructure. Here, a universal cosolvent evaporation (CSE) strategy is presented by which perovskite SCs and arrays are produced directly on substrates via printing and coating methods within minutes at room temperature from drying droplets. The CSE strategy successfully guides the supersaturation via controlled drying of droplets to suppress all crystallization pathways but one, and is shown to produce SCs of a wide variety of 3D, 2D, and mixed-cation/halide perovskites with consistency. This approach works with commonly used precursors and solvents, making it universal. Importantly, the SC consumes the precursor in the droplet, which enables the large-scale fabrication of SC arrays with minimal residue. Direct on-chip fabrication of 3D and 2D perovskite photodetector devices with outstanding performance is demonstrated. The approach shows that any MHP SC can now be manufactured on substrates using precision printing and scalable, high-throughput coating methods.

Fabrication Technologies for the On-Chip Integration of 2D Materials

With compact footprint, low energy consumption, high scalability, and mass producibility, chip-scale integrated devices are an indispensable part of modern technological change and development. Recent advances in 2D layered materials with their unique structures and distinctive properties have motivated their on-chip integration, yielding a variety of functional devices with superior performance and new features. To realize integrated devices incorporating 2D materials, it requires a diverse range of device fabrication techniques, which are of fundamental importance to achieve good performance and high reproducibility. This paper reviews the state-of-art fabrication techniques for the on-chip integration of 2D materials. First, an overview of the material properties and on-chip applications of 2D materials is provided. Second, different approaches used for integrating 2D materials on chips are comprehensively reviewed, which are categorized into material synthesis, on-chip transfer, film patterning, and property tuning/modification. Third, the methods for integrating 2D van der Waals heterostructures are also discussed and summarized. Finally, the current challenges and future perspectives are highlighted.

A review on advances in doping with alkali metals in halide perovskite materials

Recent progress in doping of halide perovskite materials (HPM) by using targeted elements has provided a dimension beyond structural and compositional modification, for achieving desired properties and resulting device performance. Herein doping of alkali metal ions (Li+, Na+, K+, Rb+, and Cs+) in three-dimensional HPM is reviewed to lay a particular focus on advances in synthesis, doping-induced changes in optical and electrical properties, and their optoelectronic applications. The introduction of alkali metals in HPM shows an effective route for improved morphology, suppressed ion migration, reduction in non-radiative recombination, passivation of bulk and interface defects, and increased thermal stability. In the end, we provide our perspective that the effect of alkali metal incorporation on the efficiency and stability of HPM should be further investigated via in-situ characterization methods and doped HPM should be considered for more functional applications.

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Solution-Processed Perovskite Field-Effect Transistor Artificial Synapses

Metal halide perovskites are distinctive semiconductors that exhibit both ionic and electronic transport and are promising for artificial synapses. However, developing a 3-terminal transistor artificial synapse with the perovskite channel remains elusive due to the lack of a proper technique to regulate mobile ions in a non-volatile manner. Here, a solution-processed perovskite transistor is reported for artificial synapses through the implementation of a ferroelectric gate. The ferroelectric polarization provides a non-volatile electric field on the perovskite, leading to fixation of the mobile ions and hence modulation of the electronic conductance of the channel. Multi-state channel conductance is realized by partial ferroelectric polarization. The ferroelectric-gated perovskite transistor is successfully used as an artificial synapse that emulates basic synaptic functions such as long-term plasticity with excellent linearity, short-term as well as spike-timing-dependent plasticity. The strategy to regulate ion dynamics in the perovskites using the ferroelectric gate suggests a generic route to employ perovskites for synaptic electronics.

Hybrid Thin-Film Materials Combinations for Complementary Integration Circuit Implementation

Beyond conventional silicon, emerging semiconductor materials have been actively investigated for the development of integrated circuits (ICs). Considerable effort has been put into implementing complementary circuits using non-silicon emerging materials, such as organic semiconductors, carbon nanotubes, metal oxides, transition metal dichalcogenides, and perovskites. Whereas shortcomings of each candidate semiconductor limit the development of complementary ICs, an approach of hybrid materials is considered as a new solution to the complementary integration process. This article revisits recent advances in hybrid-material combination-based complementary circuits. This review summarizes the strong and weak points of the respective candidates, focusing on their complementary circuit integrations. We also discuss the opportunities and challenges presented by the prospect of hybrid integration.

Time-Dependent Field Effect in Three-Dimensional Lead-Halide Perovskite Semiconductor Thin Films

Charge transport in three-dimensional metal-halide perovskite semiconductors is due to a complex combination of ionic and electronic contributions, and its study is particularly relevant in light of their successful applications in photovoltaics as well as other opto- and microelectronic applications. Interestingly, the observation of field effect at room temperature in transistors based on solution-processed, polycrystalline, three-dimensional perovskite thin films has been elusive. In this work, we study the time-dependent electrical characteristics of field-effect transistors based on the model methylammonium lead iodide semiconductor and observe the drastic variations in output current, and therefore of apparent charge carrier mobility, as a function of the applied gate pulse duration. We infer this behavior to the accumulation of ions at the grain boundaries, which hamper the transport of carriers across the FET channel. This study reveals the dynamic nature of the field effect in solution-processed metal-halide perovskites and offers an investigation methodology useful to characterize charge carrier transport in such emerging semiconductors.

Highly Stable Thin Films Based on Novel Hybrid 1D (PRSH)PbX3 Pseudo-Perovskites

In this study, the structure and morphology, as well as time, ultraviolet radiation, and humidity stability of thin films based on newly developed 1D (PRSH)PbX₃ (X = Br, I) pseudo-perovskite materials, containing 1D chains of face-sharing haloplumbate octahedra, are investigated. All films are strongly crystalline already at room temperature, and annealing does not promote further crystallization or film reorganization. The film microstructure is found to be strongly influenced by the anion type and, to a lesser extent, by the DMF/DMSO solvent volume ratio used during film deposition by spin-coating. Comparison of specular X-ray diffraction and complementary grazing incidence X-ray diffraction analysis indicates that the use of DMF/DMSO mixed solvents promotes the strengthening of a dominant 100 or 210 texturing, as compared the case of pure DMF, and that the haloplumbate chains always lie in a plane parallel to the substrate. Under specific DMF/DMSO solvent volume ratios, the prepared films are found to be highly stable in time (up to seven months under fluxing N₂ and in the dark) and to highly moist conditions (up to 25 days at 78% relative humidity). Furthermore, for representative (PRSH)PbX₃ films, resistance against ultraviolet exposure (λ = 380 nm) is investigated, showing complete stability after irradiation for up to 15 h at a power density of 600 mW/cm². These results make such thin films interesting for highly stable perovskite-based (opto)electronic devices.

Room-Temperature Halide Perovskite Field-Effect Transistors by Ion Transport Mitigation

Solution-processed halide perovskites have emerged as excellent optoelectronic materials for applications in photovoltaic solar cells and light-emitting diodes. However, the presence of mobile ions in the material hinders the development of perovskite field-effect transistors (FETs) due to screening of the gate potential in the nearby perovskite channel, and the resulting impediment to achieving gate modulation of an electronic current at room temperature. Here, room-temperature operation is demonstrated in cesium lead tribromide (CsPbBr₃ ) perovskite-based FETs using an auxiliary ferroelectric gate of poly(vinylidenefluoride-co-trifluoroethylene) [P(VDF-TrFE)], to electrostatically fixate the mobile ions. The large interfacial polarization of the ferroelectric gate attracts the mobile ions away from the main nonferroelectric gate interface, thereby enabling modulation of the electronic current through the channel by the main gate. This strategy allows for realization of the p-type CsPbBr₃ channel and revealing the thermally activated nature of the hole charge transport. The proposed strategy is generic and can be applied for regulating ions in a variety of ionic-electronic mixed semiconductors.

Synthesis of Lead-Free CaTiO3 Oxide Perovskite Film through Solution Combustion Method and Its Thickness-Dependent Hysteresis Behaviors within 100 mV Operation

Perovskite is attracting considerable interest because of its excellent semiconducting properties and optoelectronic performance. In particular, lead perovskites have been used extensively in photovoltaic, photodetectors, thin-film transistors, and various electronic applications. On the other hand, the elimination of lead is essential because of its strong toxicity. This paper reports the synthesis of lead-free calcium titanate perovskite (CaTiO₃) using a solution-processed combustion method. The chemical and morphological properties of CaTiO₃ were examined as a function of its thickness by scanning electron microscopy, X-ray diffraction (XRD), atomic force microscopy, X-ray photoelectron spectroscopy, and ultraviolet–visible spectrophotometry. The analysis showed that thicker films formed by a cumulative coating result in larger grains and more oxygen vacancies. Furthermore, thickness-dependent hysteresis behaviors were examined by fabricating a metal-CaTiO₃-metal structure. The electrical hysteresis could be controlled over an extremely low voltage operation, as low as 100 mV, by varying the grain size and oxygen vacancies.

Two-Dimensional Hybrid Perovskite-Based van der Waals Heterostructures

Two-dimensional (2D) hybrid perovskites, as newly emerging materials, have become the center of attention in optoelectronic fields within a few years because of their unique optoelectronic properties, including tunable bandgap, long carrier diffusion length, and high absorption coefficient. 2D perovskite-based van der Waals heterostructures via integration of 2D perovskites with other layered materials provide new platforms for many optoelectronic devices with prominent performance, such as photodetectors, light-emitting diodes (LEDs), and phototransistors. In this Perspective, the unique properties of 2D perovskites will be first introduced to explore why this material is attractive and popular. Subsequently, various types of heterostructures based on 2D perovskites will be illustrated, including the heterostructure construction approaches as well as their optical and optoelectronic applications. Finally, potential research directions based on 2D perovskite heterostructures are also proposed.

Ultrasensitive Photodetectors Promoted by Interfacial Charge Transfer from Layered Perovskites to Chemical Vapor Deposition-Grown MoS2

Heterostructures for charge-carrier manipulation have laid the foundation of modern optoelectronic devices, such as photovoltaics and photodetectors. High-performance heterostructure devices usually impose stringent requirements on the material quality to sustain efficient carrier transport and charge transfer, thus leading to sophisticated fabrication processes. Here, a simple yet efficient strategy is proposed to develop ultrasensitive photodetectors based on heterostructures of chemical vapor deposition-grown MoS₂ and polycrystalline-layered perovskites. The layered perovskites possess pure crystallographic orientation with conductive edges in contact with MoS₂ , which gives rise to efficient light absorption, exciton diffusion, and interfacial charge transfer. In dark state, the mismatch of work functions of two materials facilitates low dark currents by the depletion of electrons in MoS₂ . Under light irradiation, efficient exciton diffusion and interfacial charge transfer are realized in the heterostructures with type-II band alignment, which produces drifting electrons in MoS₂ and leaves trapped holes in layered perovskites. The photodetectors present suppress noises and boost photocurrents, yielding a champion device with a responsivity of 2.5 × 10⁴  A W^-1 , and a specific detectivity of 4.1 × 10¹⁴  Jones. The results demonstrate a scalable approach for the integration of high-performance devices with high tolerance to defects.

Solution Epitaxy of Halide Perovskite Thin Single Crystals for Stable Transistors

Halide perovskites hold promise for energy and optoelectronic applications due to their fascinating photophysical properties and facile processing. Among various forms, epitaxial thin single crystals (TSCs) are highly desirable due to their high crystallinity, reduced defects, and easy epitaxial integration with other materials. However, a cost-effective method for obtaining TSCs with perfect epitaxial features remains elusive. Here, we demonstrate a direct epitaxial growth of high-quality all-inorganic perovskite CsPbBr₃ TSCs on various substrates through a facile solution process under near-ambient conditions. Structural characterizations reveal a high-quality epitaxy between the obtained perovskite TSCs and substrates, thus leading to efficiently reduced defects. The resultant TSCs display a low trap density (∼10¹¹ cm^-3) and a long carrier lifetime (∼10.16 ns). Top-gate/top-contact transistors based on these TSCs exhibit high on/off ratios of over 10⁵, an optimal hole mobility of 3.9 cm² V^-1 s^-1, almost hysteresis-free operation, and high stability at room temperature. Such a facile approach for the high-yield production of perovskite epitaxial TSCs will enable a broad range of high-performance electronic applications.

Effective Piezo-Phototronic Enhancement of Flexible Photodetectors Based on 2D Hybrid Perovskite Ferroelectric Single-Crystalline Thin-Films

2D hybrid perovskites are very attractive for optoelectronic applications because of their numerous exceptional properties. The emerging 2D perovskite ferroelectrics, in which are the coupling of spontaneous polarization and piezoelectric effects, as well as photoexcitation and semiconductor behaviors, have great appeal in the field of piezo-phototronics that enable to effectively improve the performance of optoelectronic devices via modulating the electro-optical processes. However, current studies on 2D perovskite ferroelectrics focus on bulk ceramics that cannot endure irregular mechanical deformation and limit their application in flexible optoelectronics and piezo-phototronics. Herein, we synthesize ferroelectric EA₄ Pb₃ Br₁₀ single-crystalline thin-films (SCFs) for integration into flexible photodetectors. The in-plane multiaxial ferroelectricity is evident within the EA₄ Pb₃ Br₁₀ SCFs through systematic characterizations. Flexible photodetectors based on EA₄ Pb₃ Br₁₀ SCFs are achieved with an impressive photodetection performance. More importantly, optoelectronic EA₄ Pb₃ Br₁₀ SCFs incorporated with in-plane ferroelectric polarization and effective piezoelectric coefficient show great promise for the observation of piezo-phototronic effect, which is capable of greatly enhancing the photodetector performance. Under external strains, the responsivity of the flexible photodetectors can be modulated by piezo-phototronic effect with a remarkable enhancement up to 284%. Our findings shed light on the piezo-phototronic devices and offer a promising avenue to broaden functionalities of hybrid perovskite ferroelectrics.

Tuning the Circular Dichroism and Circular Polarized Luminescence Intensities of Chiral 2D Hybrid Organic-Inorganic Perovskites through Halogenation of the Organic Ions

Through the incorporation of various halogen-substituted chiral organic cations, the effects of chiral molecules on the chiroptical properties of hybrid organic-inorganic perovskites (HOIPs) are investigated. Among them, the HOIP having a Cl-substituted chiral cation exhibits the highest circular dichroism (CD) and circular polarized luminescence (CPL) intensities, indicating the existence of the largest rotatory strength, whereas the F-substituted HIOP shows the weakest intensities. The observed modulation can be correlated to the varied magnetic transition dipole of HOIPs, which is sensitive to the d-spacing between inorganic layers and the halogen-halogen interaction between organic cations and the inorganic sheets. These counteracting effects meet the optimal CD and CPL intensity with chlorine substitution, rendering the rotatory strength of HOIPs arranged in the order of (ClMBA)₂ PbI₄ >(BrMBA)₂ PbI₄ >(IMBA)₂ PbI₄ >(MBA)₂ PbI₄ >(FMBA)₂ PbI₄ .

State of the Art and Prospects for Halide Perovskite Nanocrystals

Metal-halide perovskites have rapidly emerged as one of the most promising materials of the 21st century, with many exciting properties and great potential for a broad range of applications, from photovoltaics to optoelectronics and photocatalysis. The ease with which metal-halide perovskites can be synthesized in the form of brightly luminescent colloidal nanocrystals, as well as their tunable and intriguing optical and electronic properties, has attracted researchers from different disciplines of science and technology. In the last few years, there has been a significant progress in the shape-controlled synthesis of perovskite nanocrystals and understanding of their properties and applications. In this comprehensive review, researchers having expertise in different fields (chemistry, physics, and device engineering) of metal-halide perovskite nanocrystals have joined together to provide a state of the art overview and future prospects of metal-halide perovskite nanocrystal research.