A library of ab initio Raman spectra for automated identification of 2D materials

Large-Area Epitaxial Growth of Transition Metal Dichalcogenides

Over the past decade, research on atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) has expanded rapidly due to their unique properties such as high carrier mobility, significant excitonic effects, and strong spin-orbit couplings. Considerable attention from both scientific and industrial communities has fully fueled the exploration of TMDs toward practical applications. Proposed scenarios, such as ultrascaled transistors, on-chip photonics, flexible optoelectronics, and efficient electrocatalysis, critically depend on the scalable production of large-area TMD films. Correspondingly, substantial efforts have been devoted to refining the synthesizing methodology of 2D TMDs, which brought the field to a stage that necessitates a comprehensive summary. In this Review, we give a systematic overview of the basic designs and significant advancements in large-area epitaxial growth of TMDs. We first sketch out their fundamental structures and diverse properties. Subsequent discussion encompasses the state-of-the-art wafer-scale production designs, single-crystal epitaxial strategies, and techniques for structure modification and postprocessing. Additionally, we highlight the future directions for application-driven material fabrication and persistent challenges, aiming to inspire ongoing exploration along a revolution in the modern semiconductor industry.

GPAW: An open Python package for electronic structure calculations

We review the GPAW open-source Python package for electronic structure calculations. GPAW is based on the projector-augmented wave method and can solve the self-consistent density functional theory (DFT) equations using three different wave-function representations, namely real-space grids, plane waves, and numerical atomic orbitals. The three representations are complementary and mutually independent and can be connected by transformations via the real-space grid. This multi-basis feature renders GPAW highly versatile and unique among similar codes. By virtue of its modular structure, the GPAW code constitutes an ideal platform for the implementation of new features and methodologies. Moreover, it is well integrated with the Atomic Simulation Environment (ASE), providing a flexible and dynamic user interface. In addition to ground-state DFT calculations, GPAW supports many-body GW band structures, optical excitations from the Bethe-Salpeter Equation, variational calculations of excited states in molecules and solids via direct optimization, and real-time propagation of the Kohn-Sham equations within time-dependent DFT. A range of more advanced methods to describe magnetic excitations and non-collinear magnetism in solids are also now available. In addition, GPAW can calculate non-linear optical tensors of solids, charged crystal point defects, and much more. Recently, support for graphics processing unit (GPU) acceleration has been achieved with minor modifications to the GPAW code thanks to the CuPy library. We end the review with an outlook, describing some future plans for GPAW.

High-throughput computational stacking reveals emergent properties in natural van der Waals bilayers

Stacking of two-dimensional (2D) materials has emerged as a facile strategy for realising exotic quantum states of matter and engineering electronic properties. Yet, developments beyond the proof-of-principle level are impeded by the vast size of the configuration space defined by layer combinations and stacking orders. Here we employ a density functional theory (DFT) workflow to calculate interlayer binding energies of 8451 homobilayers created by stacking 1052 different monolayers in various configurations. Analysis of the stacking orders in 247 experimentally known van der Waals crystals is used to validate the workflow and determine the criteria for realisable bilayers. For the 2586 most stable bilayer systems, we calculate a range of electronic, magnetic, and vibrational properties, and explore general trends and anomalies. We identify an abundance of bistable bilayers with stacking order-dependent magnetic or electrical polarisation states making them candidates for slidetronics applications.

A database of computed Raman spectra of inorganic compounds with accurate hybrid functionals

Raman spectroscopy is widely applied in identifying local structures in materials, but the interpretation of Raman spectra is non-trivial. An accurate computational database of reference spectra calculated with a consistent level of theory can significantly aid in interpreting measured Raman spectra. Here, we present a database of Raman spectra of inorganic compounds calculated with accurate hybrid functionals in density functional theory. Raman spectra were obtained by calculating dynamical matrices and polarizability tensors for structures from the Inorganic Crystal Structure Database. The calculated Raman spectra and other phonon properties (e.g., infrared spectra) are stored in a MongoDB database publicly shared through a web application. We assess the accuracy of our Raman calculations by statistically comparing ~80 calculated spectra with an existing experimental Raman database. To date, the database contains 161 compounds and is continuously growing as we add more materials computed with our automated workflow.

Catalytic Structure Design by AI Generating with Spectroscopic Descriptors

Generative artificial intelligence has depicted a beautiful blueprint for on-demand design in chemical research. However, the few successful chemical generations have only been able to implement a few special property values because most chemical descriptors are mathematically discrete or discontinuously adjustable. Herein, we use spectroscopic descriptors with machine learning to establish a quantitative spectral structure-property relationship for adsorbed molecules on metal monatomic catalysts. Besides catalytic properties such as adsorption energy and charge transfer, the complete spatial relative coordinates of the adsorbed molecule were successfully inverted. The spectroscopic descriptors and prediction models are generalized, allowing them to be transferred to several different systems. Due to the continuous tunability of the spectroscopic descriptors, the design of catalytic structures with continuous adsorption states generated by AI in the catalytic process has been achieved. This work paves the way for using spectroscopy to enable real-time monitoring of the catalytic process and continuous customization of catalytic performance, which will lead to profound changes in catalytic research.

Structural Diversity of Single-Walled Transition Metal Dichalcogenide Nanotubes Grown via Template Reaction

Monolayers of transition metal dichalcogenides (TMDs) are an ideal 2D platform for studying a wide variety of electronic properties and potential applications due to their chemical diversity. Similarly, single-walled TMD nanotubes (SW-TMDNTs)-seamless cylinders of rolled-up TMD monolayers-are 1D materials that can exhibit tunable electronic properties depending on both their chirality and composition. However, much less has been explored about their geometrical structures and chemical variations due to their instability under ambient conditions. Here, the structural diversity of SW-TMDNTs templated by boron nitride nanotubes (BNNTs) is reported. The outer surfaces and inner cavities of the BNNTs promote and stabilize the coaxial growth of SW-TMDNTs with various diameters, including few-nanometers-wide species. The chiral indices (n,m) of individual SW-MoS2 NTs are assigned by high-resolution transmission electron microscopy, and statistical analyses reveals a broad chirality distribution ranging from zigzag to armchair configurations. Furthermore, this methodology can be applied to the synthesis of various TMDNTs, such as selenides and alloyed Mo1- x Wx S2 . Comprehensive microscopic and spectroscopic analyses also suggest the partial formation of Janus MoS2(1- x ) Se2 x nanotubes. The BNNT-templated reaction provides a universal platform to characterize the chirality-dependent properties of 1D nanotubes with various electronic structures.

Infrared Raman spectroscopy enables noninvasive biochemical assessment of skin tissue and the thermal stability

Raman-active modes of human skin and pork belly have been studied systematically by a near-infrared Raman spectrometer with an exciting laser of 1064 nm. The main components and quantitative determination of pork belly are extracted by fitting the Raman spectra with the normalized Raman spectra of biochemical reagents such as collagen, elastin, triolein, fibronectin, fibrin, and hyaluronic acid. It demonstrates that the main components and quantity are various at different locations of pork belly, while the main components of human skin are similar to those of pig skin. In a further step, the evolution of the heating time-dependent Raman modes of isolated pig skin has been investigated for the mechanism of burnt skin. One can find that the spatial structure and main components of skin have an excellent thermal stability in the temperature range from -120 to 200 ∘C, which is confirmed by the temperature dependent Raman spectra of isolated pig skin, microporous acellular dermal matrix (MADM) as well as their corresponding biochemical reagents (collagen, elastin, triolein, etc.). These results help understand the mechanism of the living skin burnt by fire or hot water, and supplies an alternative technology for surgeons to diagnose the depth of a burn injury in time.

Combining experiments on luminescent centres in hexagonal boron nitride with the polaron model and ab initio methods towards the identification of their microscopic origin

The two-dimensional material hexagonal boron nitride (hBN) hosts luminescent centres with emission energies of ∼2 eV which exhibit pronounced phonon sidebands. We investigate the microscopic origin of these luminescent centres by combining ab initio calculations with non-perturbative open quantum system theory to study the emission and absorption properties of 26 defect transitions. Comparing the calculated line shapes with experiments we narrow down the microscopic origin to three carbon-based defects: C2CB, C2CN, and VNCB. The theoretical method developed enables us to calculate so-called photoluminescence excitation (PLE) maps, which show excellent agreement with our experiments. The latter resolves higher-order phonon transitions, thereby confirming both the vibronic structure of the optical transition and the phonon-assisted excitation mechanism with a phonon energy ∼170 meV. We believe that the presented experiments and polaron-based method accurately describe luminescent centres in hBN and will help to identify their microscopic origin.

Intermediate State between MoSe2 and Janus MoSeS during Atomic Substitution Process

Janus transition metal dichalcogenides (TMDCs), with dissimilar chalcogen atoms on each side of TMDCs, have garnered considerable research attention because of the out-of-plane intrinsic polarization in monolayer TMDCs. Although a plasma process has been proposed for synthesizing Janus TMDCs based on the atomic substitution of surface atoms at room temperature, the formation dynamics and intermediate electronic states have not been completely examined. In this study, we investigated the intermediate state between MoSe₂ and Janus MoSeS during plasma processing. Atomic composition analysis and atomic-scale structural observations revealed the intermediate partially substituted Janus (PSJ) structure. Combined with theoretical calculations, we successfully clarified the characteristic Raman modes in the intermediate PSJ structure. The PL exhibited discontinuous transitions that could not be explained by the theoretical calculations. These findings will contribute toward understanding the formation process and electronic-state modulation of Janus TMDCs.

Real-Time Diagnostics of 2D Crystal Transformations by Pulsed Laser Deposition: Controlled Synthesis of Janus WSSe Monolayers and Alloys

Energetic processing methods such as hyperthermal implantation hold special promise to achieve the precision synthesis of metastable two-dimensional (2D) materials such as Janus monolayers; however, they require precise control. Here, we report a feedback approach to reveal and control the transformation pathways in materials synthesis by pulsed laser deposition (PLD) and apply it to investigate the transformation kinetics of monolayer WS₂ crystals into Janus WSSe and WSe₂ by implantation of Se clusters with different maximum kinetic energies (<42 eV/Se-atom) generated by laser ablation of a Se target. Real-time Raman spectroscopy and photoluminescence are used to assess the structure, composition, and optoelectronic quality of the monolayer crystal as it is implanted with well-controlled fluxes of selenium for different kinetic energies that are regulated with in situ ICCD imaging, ion probe, and spectroscopy diagnostics. First-principles calculations, XPS, and atomic-resolution HAADF STEM imaging are used to understand the intermediate alloy compositions and their vibrational modes to identify transformation pathways. The real-time kinetics measurements reveal highly selective top-layer conversion as WS₂ transforms through WS_2(1-x)Se_2x alloys to WSe₂ and provide the means to adjust processing conditions to achieve fractional and complete Janus WSSe monolayers as metastable transition states. The general approach demonstrates a real-time feedback method to achieve Janus layers or other metastable alloys of the desired composition, and a general means to adjust the structure and quality of materials grown by PLD, addressing priority research directions for precision synthesis with real-time adaptive control.

High-throughput computation of Raman spectra from first principles

Raman spectroscopy is a widely-used non-destructive material characterization method, which provides information about the vibrational modes of the material and therefore of its atomic structure and chemical composition. Interpretation of the spectra requires comparison to known references and to this end, experimental databases of spectra have been collected. Reference Raman spectra could also be simulated using atomistic first-principles methods but these are computationally demanding and thus the existing databases of computational Raman spectra are fairly small. In this work, we developed an optimized workflow to calculate the Raman spectra efficiently and taking full advantage of the phonon properties found in existing material databases. The workflow was benchmarked and validated by comparison to experiments and previous computational methods for select technologically relevant material systems. Using the workflow, we performed high-throughput calculations for a large set of materials (5099) belonging to many different material classes, and collected the results to a database. Finally, the contents of database are analyzed and the calculated spectra are shown to agree well with the experimental ones.

Indirect Band Gap Semiconductors for Thin-Film Photovoltaics: High-Throughput Calculation of Phonon-Assisted Absorption

Discovery of high-performance materials remains one of the most active areas in photovoltaics (PV) research. Indirect band gap materials form the largest part of the semiconductor chemical space, but predicting their suitability for PV applications from first-principles calculations remains challenging. Here, we propose a computationally efficient method to account for phonon-assisted absorption across the indirect band gap and use it to screen 127 experimentally known binary semiconductors for their potential as thin-film PV absorbers. Using screening descriptors for absorption, carrier transport, and nonradiative recombination, we identify 28 potential candidate materials. The list, which contains 20 indirect band gap semiconductors, comprises well-established (3), emerging (16), and previously unexplored (9) absorber materials. Most of the new compounds are anion-rich chalcogenides (TiS₃ and Ga₂Te₅) and phosphides (PdP₂, CdP₄, MgP₄, and BaP₃) containing homoelemental bonds and represent a new frontier in PV materials research. Our work highlights the previously underexplored potential of indirect band gap materials for optoelectronic thin-film technologies.

Growth Optimization and Device Integration of Narrow-Bandgap Graphene Nanoribbons

The electronic, optical, and magnetic properties of graphene nanoribbons (GNRs) can be engineered by controlling their edge structure and width with atomic precision through bottom-up fabrication based on molecular precursors. This approach offers a unique platform for all-carbon electronic devices but requires careful optimization of the growth conditions to match structural requirements for successful device integration, with GNR length being the most critical parameter. In this work, the growth, characterization, and device integration of 5-atom wide armchair GNRs (5-AGNRs) are studied, which are expected to have an optimal bandgap as active material in switching devices. 5-AGNRs are obtained via on-surface synthesis under ultrahigh vacuum conditions from Br- and I-substituted precursors. It is shown that the use of I-substituted precursors and the optimization of the initial precursor coverage quintupled the average 5-AGNR length. This significant length increase allowed the integration of 5-AGNRs into devices and the realization of the first field-effect transistor based on narrow bandgap AGNRs that shows switching behavior at room temperature. The study highlights that the optimized growth protocols can successfully bridge between the sub-nanometer scale, where atomic precision is needed to control the electronic properties, and the scale of tens of nanometers relevant for successful device integration of GNRs.

On the choice of shape and size for truncated cluster-based X-ray spectral simulations of 2D materials

Truncated cluster models represent an effective way for simulating X-ray spectra of 2D materials. Here we systematically assessed the influence of two key parameters, the cluster shape (honeycomb, rectangle, or parallelogram) and size, in X-ray photoelectron (XPS) and absorption (XAS) spectra simulations of three 2D materials at five K-edges (graphene, C 1s; C3N, C/N 1s; h-BN, B/N 1s) to pursue the accuracy limit of binding energy (BE) and spectral profile predictions. Several recent XPS experiments reported BEs with differences spanning 0.3, 1.5, 0.7, 0.3, and 0.3 eV, respectively. Our calculations favor the honeycomb model for stable accuracy and fast size convergence, and a honeycomb with ~10 nm side length (120 atoms) is enough to predict accurate 1s BEs for all 2D sheets. Compared to all these experiments, predicted BEs show absolute deviations as follows: 0.4-0.7, 0.0-1.0, 0.4-1.1, 0.6-0.9, and 0.1-0.4 eV. A mean absolute deviation of 0.3 eV was achieved if we compare only to the closest experiment. We found that the sensitivity of computed BEs to different model shapes depends on systems: graphene, sensitive; C3N, weak; h-BN, very weak. This can be attributed to their more or less delocalized π electrons in this series. For this reason, a larger cluster size is required for graphene than the other two to reproduce fine structures in XAS. The general profile of XAS shows weak dependence to model shape. Our calculations provide optimal parameters and accuracy estimations that are useful for X-ray spectral simulations of general graphene-like 2D materials.

Raman Spectroscopy of Janus MoSSe Monolayer Polymorph Modifications Using Density Functional Theory

Two-dimensional transition metal dichalcogenides (TMDs) with Janus structures are attracting increasing attention due to their emerging superior properties in breaking vertical mirror symmetry when compared to conventional TMDs, which can be beneficial in fields such as piezoelectricity and photocatalysis. The structural investigations of such materials, along with other 2D materials, can be successfully carried out using the Raman spectroscopy method. One of the key elements in such research is the theoretical spectrum, which may assist in the interpretation of experimental data. In this work, the simulated Raman spectrum of 1H-MoSSe and the predicted Raman spectra for 1T, 1T', and 1H' polymorph modifications of MoSSe monolayers were characterized in detail with DFT calculations. The interpretation of spectral profiles was made based on the analysis of the lattice dynamics and partial phonon density of states. The presented theoretical data open the possibility of an accurate study of MoSSe polymorphs, including the control of the synthesized material quality and the characterization of samples containing a mixture of polymorphs.

Reaching the Excitonic Limit in 2D Janus Monolayers by In Situ Deterministic Growth

Named after the two-faced Roman god of transitions, transition metal dichalcogenide (TMD) Janus monolayers have two different chalcogen surfaces, inherently breaking the out-of-plane mirror symmetry. The broken mirror symmetry and the resulting potential gradient lead to the emergence of quantum properties such as the Rashba effect and the formation of dipolar excitons. Experimental access to these quantum properties, however, hinges on the ability to produce high-quality 2D Janus monolayers. Here, these results introduce a holistic 2D Janus synthesis technique that allows real-time monitoring of the growth process. This prototype chamber integrates in situ spectroscopy, offering fundamental insights into the structural evolution and growth kinetics, that allow the evaluation and optimization of the quality of Janus monolayers. The versatility of this method is demonstrated by synthesizing and monitoring the conversion of SWSe, SNbSe, and SMoSe Janus monolayers. Deterministic conversion and real-time data collection further aid in conversion of exfoliated TMDs to Janus monolayers and unparalleled exciton linewidth values are reached, compared to the current best standard. The results offer an insight into the process kinetics and aid in the development of new Janus monolayers with high optical quality, which is much needed to access their exotic properties.

Raman spectra-based structural classification analysis of quinoidal and derived molecular systems

This work reports a classification analysis method based on the vibrational Raman spectra of 38 quinones and related structures, spectrally ordering and classifying the compounds. The molecular systems are relevant for chemical and biological processes, with applications in pharmacology, toxicology and medicine. The classification strategy uses a combination of principal component analysis with K-means clustering methods. Both theoretical simulations and experimental data are analysed, thus establishing their spectral characteristics, as related to their chemical structures and properties. The protocol introduced here should be broadly applicable in other molecular and solid state systems.

Shear and Breathing Modes of Layered Materials

Layered materials (LMs), such as graphite, hexagonal boron nitride, and transition-metal dichalcogenides, are at the center of an ever-increasing research effort, due to their scientific and technological relevance. Raman and infrared spectroscopies are accurate, non-destructive approaches to determine a wide range of properties, including the number of layers, N, and the strength of the interlayer interactions. We present a general approach to predict the complete spectroscopic fan diagrams, i.e., the relations between frequencies and N for the optically active shear and layer-breathing modes of any multilayer comprising N ≥ 2 identical layers. In order to achieve this, we combine a description of the normal modes in terms of a one-dimensional mechanical model, with symmetry arguments that describe the evolution of the point group as a function of N. Group theory is then used to identify which modes are Raman- and/or infrared-active, and to provide diagrams of the optically active modes for any stack composed of identical layers. We implement the method and algorithms in an open-source tool to assist researchers in the prediction and interpretation of such diagrams. Our work will underpin future efforts on Raman and infrared characterization of known, and yet not investigated, LMs.

Two-Dimensional Materials with Giant Optical Nonlinearities near the Theoretical Upper Limit

Nonlinear optical (NLO) phenomena such as harmonic generation and Kerr and Pockels effects are of great technological importance for lasers, frequency converters, modulators, switches, etc. Recently, two-dimensional (2D) materials have drawn significant attention due to their strong and peculiar NLO properties. Here, we describe an efficient first-principles workflow for calculating the quadratic optical response and apply it to 375 non-centrosymmetric semiconductor monolayers from the Computational 2D Materials Database (C2DB). Sorting the nonresonant nonlinearities with respect to bandgap E_g reveals an upper limit proportional to E_g^-4, which is neatly explained by two distinct generic models. We identify multiple promising candidates with giant nonlinearities and bandgaps ranging from 0.4 to 5 eV, some of which approach the theoretical upper limit and greatly outperform known materials. Our comprehensive library of ab initio NLO spectra for all 375 monolayers is freely available via the C2DB Web site.

Two-Dimensional Metallic Vanadium Ditelluride as a High-Performance Electrode Material

Two-dimensional (2D) metallic transition-metal dichalcogenides (MTMDCs) are considered as ideal electrode materials for enhancing the device performances of 2D semiconducting transition-metal dichalcogenides, due to their similar atomic structures and complementary electronic properties. Vanadium ditelluride (VTe₂) behaves as a fascinating material in MTMDCs family, presenting room-temperature ferromagnetism, charge density waves order, and topological property. However, its practical applications in universal electrode/energy-related fields remain unexplored. Herein, we achieved the direct synthesis of ultrathin, large-domain, and thickness-tunable 1T-VTe₂ nanosheets on an easily available mica substrate by chemical vapor deposition (CVD). We further uncover that the CVD-derived 1T-VTe₂ can serve as a high-performance electrode material thanks to its ultrahigh conductivity. Accordingly, a 6 times higher field-effect mobility (∼47.5 cm² V^-1 s^-1) was achieved in 1T-VTe₂-contacted monolayer MoS₂ devices than that using a conventional Ti/Au electrode (∼8.1 cm² V^-1 s^-1). Moreover, the CVD-synthesized 1T-VTe₂ nanosheets are revealed to present excellent electrocatalytic activity for hydrogen evolution reaction. These results should propel the direct application of CVD-grown 2D MTMDCs as high-performance electrode materials in all 2D materials related devices.

Simulated Raman spectra of bulk and low-dimensional phosphorus allotropes

We present a comprehensive theoretical and experimental Raman spectroscopic comparative study of bulk Phosphorus allotropes (white, black, Hittorf's, fibrous) and their monolayer equivalents, demonstrating that the application of the Placzek approximation to density functional theory calculated frequencies allows reliable and accurate reproduction of the bulk spectra at a relatively low computational cost. As well as accurate frequencies, peak intensities are also reproduced with reasonable accuracy. Having established the viability of the method we apply it to other less well characterised phosphorus forms such as isolated P4 cages and the planar blue-phosphorus phase. There are several speculative structural models in the literature for amorphous red phosphorus, and we predict Raman spectra for several of these. Via comparison with experiment this allows us to eliminate many of them such as the P2P2-zigzag chain and connected P4 models. The combination of Density functional theory (DFT) modelling, Placzek approximation for intensities with experimental Raman spectroscopy is demonstrated as a powerful combination for accurate characterisation of phosphorus species.

Liquid-phase exfoliated MoS2 nanosheets doped with p-type transition metals: a comparative analysis of photocatalytic and antimicrobial potential combined with density functional theory

MoS2 nanosheets were developed by undertaking the liquid-phase exfoliation of bulk counterparts. In order to enhance its photocatalytic properties, the host material was doped with p-type transition metals (i.e., Ag, Co, Bi, and Zr). The hydrothermal technique was used to produce samples doped with 7.5 wt% transition metals (TM). X-ray diffraction detected the existence of 2H-phase by mirroring its reflection at 2θ ∼ 14°, while the peak distribution revealed the degree of exfoliation in samples. Low PL intensities indicated a lower recombination of electron-hole pairs, as corroborated by a high degree of photocatalytic action. Raman analysis was undertaken to identify molecular vibrations. The A1g mode in Raman spectra consistently showed a blueshift in all samples and the E12g mode was only slightly affected, which is evidence of the p-type doping in the MoS2 nanosheets. In the XPS spectrum, two characteristic peaks of Mo 3d appeared at 229.87 and 233.03 eV assigned to Mo-3d5/2 and Mo-3d3/2, respectively. Furthermore, a microstructural examination with HR-TEM and FESEM divulged a thin-layered structure of MoS2 consisting of flat, gently curved or twisted nanosheets. Diverse morphologies were observed with a non-uniform distribution of the dopant. Photocatalytic action of the TM-doped products effectively degraded methylene blue (MB) concentrations of up to 94 percent (for Ag-MoS2). The synergistic effect of doped MoS2 nanosheets against S. aureus in comparison to E. coli bacteria was also evaluated. The efficacy % age improved from (0-31.7%) and (23.5-55.2%) against E. coli, and (0-34.2%) and (8.3-69.23%) against S. aureus. Moreover, results from first principles calculations indicate that substitutional doping of TM atoms is indeed advantageous. Theoretical calculations confirmed that doping with Ag, Co, Bi, and Zr leads to a decrease in the band gap to a certain degree, in which the conduction band edge shifts toward lower energy, while the valence band shifts closer to the high energy end. It can be concluded that Ag, Co, and Bi impurities can lead to beneficial p-type doping in MoS2 monolayered structures. With regards to doping with Zr, the acceptor levels are formed above the edge of the valence band, revealing an introduction of the p-type character.