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Wang TH, Huang TY, Chen CL. Thermal-Driven Cobalt Intercalation Enhances Thermoelectric ZT of n-Type Bi 2Te 2.7Se 0.3. ACS APPLIED MATERIALS & INTERFACES 2024; 16:46280-46288. [PMID: 39162615 DOI: 10.1021/acsami.4c08479] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/21/2024]
Abstract
Layered materials have emerged as stars in the realm of nanomaterials, showcasing exceptional versatility in various fields. This investigation employed a thermally driven method to intercalate cobalt (Co) into the van der Waals gaps of (CuI)0.002Bi2Te2.7Se0.3 crystals and investigated the mechanism by which the intercalated Co enhances the thermoelectric performance of the material. Co intercalation decreases the carrier concentration, thereby improving the Seebeck coefficient and decreasing both the mobility and the electrical conductivity. These effects result in a significant enhancement of the power factor above 400 K. Theoretical electronic structure calculations provide insights into the role of Co in this material. Additionally, the presence of intercalated Co significantly enhances phonon scattering, thereby boosting the thermoelectric figure-of-merit, ZT to 1.33 at 350 K for 0.17% Co intercalation. These findings highlight the potential of Co incorporation for improving the thermoelectric energy efficiency of n-type Bi2Te2.7Se0.3, offering avenues for further optimization in thermoelectric applications.
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Affiliation(s)
| | - Tsung-Yu Huang
- Department of Materials Engineering and Center for Plasma and Thin Film Technologies, Ming Chi University of Technology, New Taipei City 243, Taiwan
| | - Cheng-Lung Chen
- Graduate School of Materials Science, National Yunlin University of Science and Technology, Yunlin 64002, Taiwan
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2
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Rahman AU, Abdul M, Karim A, Rahman G, El Azab IH, Jingfu B. Exploring the properties of Zr 2CO 2/GaS van der Waals heterostructures for optoelectronic applications. Phys Chem Chem Phys 2024; 26:21453-21467. [PMID: 39054951 DOI: 10.1039/d4cp02370f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/27/2024]
Abstract
We investigate the structural, electronic, and optical properties of eight possible Zr2CO2/GaS van der Waals (vdW) heterostructures using first-principles calculations based on a hybrid functional. These structures display favorable stability, indicated by matching crystal structures and negative formation energies. In all considered configurations, these heterostructures act as indirect band gap semiconductors with a type-II band alignment, allowing efficient electron-hole separation. Optical studies reveal their suitability for optoelectronic applications. Zr2CO2/GaS under 4% biaxial compressive strain meets the criteria for photocatalytic water splitting, suggesting their potential for electronic and optoelectronic devices in the visible spectrum. Our findings present prospects for advanced photocatalytic materials and optical devices.
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Affiliation(s)
- Altaf Ur Rahman
- Department of Physics, Riphah International University, Lahore, Pakistan.
- Institute of Physics, UFRGS, 91509-900 Porto Alegre, Rio Grande do Sul, Brazil
| | - Muhammad Abdul
- School of Mechanical and Electronic Engineering, Quanzhou University of Information Engineering, Quanzhou, Fujian 362000, People's Republic of China.
| | - Altaf Karim
- Department of Physics, COMSATS University Islamabad, 44000, Pakistan
| | - Gul Rahman
- Department of Physics, Quaid-i-Azam University Islamabad, 45320, Pakistan.
| | - Islam H El Azab
- Department of Food Science and Nutrition, College of Science, Taif University, P.O. box 11099, Taif 21944, Saudi Arabia
| | - Bao Jingfu
- School of Integrated Circuit Science and Engineering, University of Electronic Sciences and Technology of China, Chengdu 610054, People's Republic of China
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3
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Qin T, Zhao X, Sui Y, Wang D, Chen W, Zhang Y, Luo S, Pan W, Guo Z, Leung DYC. Heterointerfaces: Unlocking Superior Capacity and Rapid Mass Transfer Dynamics in Energy Storage Electrodes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2402644. [PMID: 38822769 DOI: 10.1002/adma.202402644] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/21/2024] [Revised: 05/05/2024] [Indexed: 06/03/2024]
Abstract
Heterogeneous electrode materials possess abundant heterointerfaces with a localized "space charge effect", which enhances capacity output and accelerates mass/charge transfer dynamics in energy storage devices (ESDs). These promising features open new possibilities for demanding applications such as electric vehicles, grid energy storage, and portable electronics. However, the fundamental principles and working mechanisms that govern heterointerfaces are not yet fully understood, impeding the rational design of electrode materials. In this study, the heterointerface evolution during charging and discharging process as well as the intricate interaction between heterointerfaces and charge/mass transport phenomena, is systematically discussed. Guidelines along with feasible strategies for engineering structural heterointerfaces to address specific challenges encountered in various application scenarios, are also provided. This review offers innovative solutions for the development of heterogeneous electrode materials, enabling more efficient energy storage beyond conventional electrochemistry. Furthermore, it provides fresh insights into the advancement of clean energy conversion and storage technologies. This review contributes to the knowledge and understanding of heterointerfaces, paving the way for the design and optimization of next-generation energy storage materials for a sustainable future.
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Affiliation(s)
- Tingting Qin
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong, 999077, China
| | - Xiaolong Zhao
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong, 999077, China
| | - Yiming Sui
- Department of Chemistry, Oregon State University, Corvallis, OR, 97331-4003, USA
| | - Dong Wang
- Key Laboratory of Automobile Materials of MOE School of Materials Science and Engineering and Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Jilin University, Changchun, 130013, China
| | - Weicheng Chen
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong, 999077, China
| | - Yingguang Zhang
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong, 999077, China
| | - Shijing Luo
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong, 999077, China
| | - Wending Pan
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong, 999077, China
| | - Zhenbin Guo
- Institute of Semiconductor Manufacturing Research, Shenzhen University, Shenzhen, 518060, China
| | - Dennis Y C Leung
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong, 999077, China
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Kharchich FZ, Castellanos-Gomez A, Frisenda R. Electrical properties of disordered films of van der Waals semiconductor WS 2 on paper. NANOSCALE 2024. [PMID: 38646962 DOI: 10.1039/d3nr06535a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/25/2024]
Abstract
One of the primary objectives in contemporary electronics is to develop sensors that are not only scalable and cost-effective but also environmentally sustainable. To achieve this goal, numerous experiments have focused on incorporating nanomaterial-based films, which utilize nanoparticles or van der Waals materials, on paper substrates. In this article, we present a novel fabrication technique for producing dry-abraded van der Waals films on paper, demonstrating outstanding electrical characteristics. We assess the quality and uniformity of these films by conducting a spatial resistivity characterization on a 5 × 5 cm2 dry-abraded WS2 film with an average thickness of 25 μm. Employing transfer length measurements with varying channel length-to-width ratios, we extract critical parameters, including sheet resistance and contact resistance. Notably, our findings reveal a resistivity approximately one order of magnitude lower than previous reports. The film's inherent disorder manifests as an asymmetric distribution of resistance values for specific geometries. We explore how this behavior can be effectively modeled through a random resistance network (RRN), which can reproduce the experimentally observed resistance distribution. Finally, we investigate the response of these devices under applied uniaxial strain and apply the RRN model to gain a deeper understanding of this process.
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Affiliation(s)
- Fatima Zahra Kharchich
- Physics Department, Sapienza University of Rome, Piazzale Aldo Moro 5, 00185 Rome, Italy.
- Physics Department, Abdelmalek Essaadi University, M'haneche II, 93002 Tetouan, Morocco
| | - Andres Castellanos-Gomez
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Madrid E-28049, Spain
| | - Riccardo Frisenda
- Physics Department, Sapienza University of Rome, Piazzale Aldo Moro 5, 00185 Rome, Italy.
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5
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Baker EAD, Price CJ, Hepplestone SP. Computational Study of the Enhancement of Graphene Electrodes for Use in Li-Ion Batteries via Forming Superlattices with Transition Metal Dichalcogenides. THE JOURNAL OF PHYSICAL CHEMISTRY. C, NANOMATERIALS AND INTERFACES 2024; 128:723-731. [PMID: 38264433 PMCID: PMC10801692 DOI: 10.1021/acs.jpcc.3c06300] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/20/2023] [Revised: 12/18/2023] [Accepted: 12/19/2023] [Indexed: 01/25/2024]
Abstract
In our study, we examined nine transition metal dichalcogenide (TMDC)-graphene superlattices as potential Li-ion intercalation electrodes. We determined their voltages, with ScS2-graphene in T- and R-phases showing the highest at around 3 V, while the others ranged from 0 to 1.5 V. Most superlattices exhibited minimal volumetric expansion (5 to 10%), similar to NMC (8%), except for SnS2-T and NiS2-T, which expanded up to nearly 20%. We evaluated their capacities using a stability metric, EIS, and found that ScS2-T, ScS2-R, and TiS2-T could be intercalated up to two Li ions per MX2 unit without decomposing to Li2S, yielding capacities of 306.77 mA h/g for both ScS2 phases and 310.84 mA h/g for TiS2-T, roughly equivalent to LiC2. MoS2-T could accept Li up to a limit of a = 15/16 in LiaMoS2Cb, corresponding to a capacity of 121.29 mA h/g (equivalent to LiC4). Examining the influence of graphene layers on MoS2-T, we observed a voltage decrease and an initial EIS decrease before effectively flat lining, which is due to charge donation to the middle graphene layer, reducing the electron concentration near the TMDC layer. As graphene layers increased, overall volume expansion decreased with Li intercalation, which is attributed to the in-plane expansion changing. Our results underscore the potential of TMDC-graphene superlattices as Li-ion intercalation electrodes, offering low volumetric expansions, high capacities, and a wide voltage range. These superlattices all show an increase in the capacity of the graphene.
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Chen X, de Boer RM, Kosari A, van Gog H, van Huis MA. Thermal Reduction of MoO 3 Particles and Formation of MoO 2 Nanosheets Monitored by In Situ Transmission Electron Microscopy. THE JOURNAL OF PHYSICAL CHEMISTRY. C, NANOMATERIALS AND INTERFACES 2023; 127:21387-21398. [PMID: 37937158 PMCID: PMC10626599 DOI: 10.1021/acs.jpcc.3c05159] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/31/2023] [Revised: 09/20/2023] [Accepted: 10/09/2023] [Indexed: 11/09/2023]
Abstract
Nanoscale forms of molybdenum trioxide have found widespread use in optoelectronic, sensing, and battery applications. Here, we investigate the thermal evolution of micrometer-sized molybdenum trioxide particles during in situ heating in vacuum using transmission electron microscopy and observed drastic structural and chemical changes that are strongly dependent on the heating rate. Rapid heating (flash heating) of MoO3 particles to a temperature of 600 °C resulted in large-scale formation of MoO2(001) nanosheets that were formed in a wide area around the reducing MoO3 particles, within a few minutes of time frame. In contrast, when heated more gently, the initially single-crystal MoO3 particles were reduced into hollow nanostructures with polycrystalline MoO2 shells. Using density functional theory calculations employing the DFT-D3 functional, the surface energy of MoO3(010) was calculated to be 0.187 J m-2, and the activation energy for exfoliation of the van der Waals bonded MoO3 (010) layers was calculated to be 0.478 J m-2. Ab initio molecular dynamics simulations show strong fluctuations in the distance between the (010) layers, where thermal vibrations lead to additional separations of up to 1.8 Å at 600 °C. This study shows efficient pathways for the generation of either MoO2 nanosheets or hollow MoO2 nanostructures with very high effective surface areas beneficial for applications.
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Affiliation(s)
- Xiaodan Chen
- Soft
Condensed Matter, Debye Institute for Nanomaterials Science, Utrecht University, Princetonplein 5, 3584 CC Utrecht, The Netherlands
| | - Roos M. de Boer
- Soft
Condensed Matter, Debye Institute for Nanomaterials Science, Utrecht University, Princetonplein 5, 3584 CC Utrecht, The Netherlands
| | - Ali Kosari
- Soft
Condensed Matter, Debye Institute for Nanomaterials Science, Utrecht University, Princetonplein 5, 3584 CC Utrecht, The Netherlands
- Electron
Microscopy Centre, Utrecht University, Universiteitsweg 99, 3584 CG Utrecht, The Netherlands
| | - Heleen van Gog
- Nanostructured
Materials and Interfaces, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747
AG Groningen, The
Netherlands
| | - Marijn A. van Huis
- Soft
Condensed Matter, Debye Institute for Nanomaterials Science, Utrecht University, Princetonplein 5, 3584 CC Utrecht, The Netherlands
- Electron
Microscopy Centre, Utrecht University, Universiteitsweg 99, 3584 CG Utrecht, The Netherlands
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7
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Victor RT, Marroquin JFR, Safeer SH, Dugato DA, Archanjo BS, Sampaio LC, Garcia F, Felix JF. Automated mechanical exfoliation technique: a spin pumping study in YIG/TMD heterostructures. NANOSCALE HORIZONS 2023; 8:1568-1576. [PMID: 37671742 DOI: 10.1039/d3nh00137g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/07/2023]
Abstract
Spintronics devices rely on the generation and manipulation of spin currents. Two-dimensional transition-metal dichalcogenides (TMDs) are among the most promising materials for a spin current generation due to a lack of inversion symmetry at the interface with the magnetic material. Here, we report on the fabrication of Yttrium Iron Garnet(YIG)/TMD heterostructures by means of a crude and fast method. While the magnetic insulator single-crystalline YIG thin films were grown by magnetron sputtering, the TMDs, namely MoS2 and MoSe2, were directly deposited onto YIG films using an automated mechanical abrasion method. Despite the brute force aspect of the method, it produces high-quality interfaces, which are suitable for spintronic device applications. The spin current density and the effective spin mixing conductance were measured by ferromagnetic resonance, whose values found are among the highest reported in the literature. Our method can be scaled to produce ferromagnetic materials/TMD heterostructures on a large scale, further advancing their potential for practical applications.
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Affiliation(s)
- Rodrigo Torrão Victor
- Centro Brasileiro de Pesquisas Físicas, rua Dr Xavier Sigaud, 150, Urca, Rio de Janeiro, RJ, 22.290-180, Brazil.
| | | | - Syed Hamza Safeer
- Centro Brasileiro de Pesquisas Físicas, rua Dr Xavier Sigaud, 150, Urca, Rio de Janeiro, RJ, 22.290-180, Brazil.
| | - Danian Alexandre Dugato
- Centro Brasileiro de Pesquisas Físicas, rua Dr Xavier Sigaud, 150, Urca, Rio de Janeiro, RJ, 22.290-180, Brazil.
| | - Braulio Soares Archanjo
- Materials Metrology Division, National Institute of Metrology, Quality, and Technology (INMETRO), Duque de Caxias, Rio de Janeiro, 25.250-020, Brazil
| | - Luiz Carlos Sampaio
- Centro Brasileiro de Pesquisas Físicas, rua Dr Xavier Sigaud, 150, Urca, Rio de Janeiro, RJ, 22.290-180, Brazil.
| | - Flavio Garcia
- Centro Brasileiro de Pesquisas Físicas, rua Dr Xavier Sigaud, 150, Urca, Rio de Janeiro, RJ, 22.290-180, Brazil.
| | - Jorlandio Francisco Felix
- Nucleo de Física Aplicada, Instituto de Física, Universidade de Brasília, Brasília, DF 70910-900, Brazil.
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8
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Li H, Xiong X, Hui F, Yang D, Jiang J, Feng W, Han J, Duan J, Wang Z, Sun L. Constructing van der Waals heterostructures by dry-transfer assembly for novel optoelectronic device. NANOTECHNOLOGY 2022; 33:465601. [PMID: 35313295 DOI: 10.1088/1361-6528/ac5f96] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/07/2021] [Accepted: 03/21/2022] [Indexed: 06/14/2023]
Abstract
Since the first successful exfoliation of graphene, the superior physical and chemical properties of two-dimensional (2D) materials, such as atomic thickness, strong in-plane bonding energy and weak inter-layer van der Waals (vdW) force have attracted wide attention. Meanwhile, there is a surge of interest in novel physics which is absent in bulk materials. Thus, vertical stacking of 2D materials could be critical to discover such physics and develop novel optoelectronic applications. Although vdW heterostructures have been grown by chemical vapor deposition, the available choices of materials for stacking is limited and the device yield is yet to be improved. Another approach to build vdW heterostructure relies on wet/dry transfer techniques like stacking Lego bricks. Although previous reviews have surveyed various wet transfer techniques, novel dry transfer techniques have been recently been demonstrated, featuring clean and sharp interfaces, which also gets rid of contamination, wrinkles, bubbles formed during wet transfer. This review summarizes the optimized dry transfer methods, which paves the way towards high-quality 2D material heterostructures with optimized interfaces. Such transfer techniques also lead to new physical phenomena while enable novel optoelectronic applications on artificial vdW heterostructures, which are discussed in the last part of this review.
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Affiliation(s)
- Huihan Li
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Xiaolu Xiong
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Fei Hui
- School of Materials Science and Engineering, The Key Laboratory of Material Processing and Mold of Ministry of Education, Henan Key Laboratory of Advanced Nylon Materials and Application, Zhengzhou University, Zhengzhou, 450001, People's Republic of China
| | - Dongliang Yang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Jinbao Jiang
- School of Microelectronic Science and Technology, Sun Yat-Sen University, Zhuhai, 519082, People's Republic of China
| | - Wanxiang Feng
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Junfeng Han
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Junxi Duan
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Zhongrui Wang
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, People's Republic of China
| | - Linfeng Sun
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
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Baker EAD, Pitfield J, Price CJ, Hepplestone SP. Computational analysis of the enhancement of photoelectrolysis using transition metal dichalcogenide heterostructures. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:375001. [PMID: 35767988 DOI: 10.1088/1361-648x/ac7d2c] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/18/2022] [Accepted: 06/29/2022] [Indexed: 06/15/2023]
Abstract
Finding a material with all the desired properties for a photocatalytic water splitter is a challenge yet to be overcome, requiring both a surface with ideal energetics for all steps in the hydrogen and oxygen evolution reactions (HER and OER) and a bulk band gap large enough to mediate said steps. We have instead examined separating these challenges by investigating the energetic properties of two-dimensional transition metal dichalcogenides (TMDCs) that could be used as a surface coating to a material with a large enough bulk band gap. First we investigated the energetics of monolayer MoS2and PdSe2using density functional theory and then investigated how these energetics changed when they were combined into a heterostructure. Our results show that the surface properties were practically (<0.2 eV) unchanged when combined and the MoS2layer aligns well with the OER and HER. This work highlights the potential of TMDC monolayers as surface coatings for bulk materials that have sufficient band gaps for photocatalytic applications.
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Affiliation(s)
- Edward A D Baker
- Department of Physics and Astronomy, University of Exeter, Stocker Road, Exeter EX4 4QL, United Kingdom
| | - Joe Pitfield
- Department of Physics and Astronomy, University of Exeter, Stocker Road, Exeter EX4 4QL, United Kingdom
| | - Conor J Price
- Department of Physics and Astronomy, University of Exeter, Stocker Road, Exeter EX4 4QL, United Kingdom
| | - Steven P Hepplestone
- Department of Physics and Astronomy, University of Exeter, Stocker Road, Exeter EX4 4QL, United Kingdom
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10
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Lemarchand J, Bridonneau N, Battaglini N, Carn F, Mattana G, Piro B, Zrig S, Noël V. Challenges, Prospects, and Emerging Applications of Inkjet-Printed Electronics: A Chemist's Point of View. Angew Chem Int Ed Engl 2022; 61:e202200166. [PMID: 35244321 DOI: 10.1002/anie.202200166] [Citation(s) in RCA: 16] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/05/2022] [Indexed: 12/15/2022]
Abstract
Driven by the development of new functional inks, inkjet-printed electronics has achieved several milestones upon moving from the integration of simple electronic elements (e.g., temperature and pressure sensors, RFID antennas, etc.) to high-tech applications (e.g. in optoelectronics, energy storage and harvesting, medical diagnosis). Currently, inkjet printing techniques are limited by spatial resolution higher than several micrometers, which sets a redhibitorythreshold for miniaturization and for many applications that require the controlled organization of constituents at the nanometer scale. In this Review, we present the physico-chemical concepts and the equipment constraints underpinning the resolution limit of inkjet printing and describe the contributions from molecular, supramolecular, and nanomaterials-based approaches for their circumvention. Based on these considerations, we propose future trajectories for improving inkjet-printing resolution that will be driven and supported by breakthroughs coming from chemistry. Please check all text carefully as extensive language polishing was necessary. Title ok? Yes.
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Affiliation(s)
| | | | | | - Florent Carn
- Université de Paris, Laboratoire Matière et Systèmes Complexes CNRS, UMR 7057, 75013, Paris, France
| | | | - Benoit Piro
- Université de Paris, CNRS, ITODYS, 75013, Paris, France
| | - Samia Zrig
- Université de Paris, CNRS, ITODYS, 75013, Paris, France
| | - Vincent Noël
- Université de Paris, CNRS, ITODYS, 75013, Paris, France
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11
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Matatagui D, Cruz C, Carrascoso F, Al-Enizi AM, Nafady A, Castellanos-Gomez A, Horrillo MDC. Eco-Friendly Disposable WS 2 Paper Sensor for Sub-ppm NO 2 Detection at Room Temperature. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:1213. [PMID: 35407331 PMCID: PMC9000778 DOI: 10.3390/nano12071213] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/16/2022] [Revised: 03/28/2022] [Accepted: 04/01/2022] [Indexed: 12/20/2022]
Abstract
We developed inexpensive and disposable gas sensors with a low environmental footprint. This approach is based on a biodegradable substrate, paper, and features safe and nontoxic electronic materials. We show that abrasion-induced deposited WS2 nanoplatelets on paper can be employed as a successful sensing layer to develop high-sensitivity and selective sensors, which operate even at room temperature. Its performance is investigated, at room temperature, against NO2 exposure, finding that the electrical resistance of the device drops dramatically upon NO2 adsorption, decreasing by ~42% (~31% half a year later) for 0.8 ppm concentration, and establishing a detection limit around~2 ppb (~3 ppb half a year later). The sensor is highly selective towards NO2 gas with respect to the interferents NH3 and CO, whose responses were only 1.8% (obtained for 30 ppm) and 1.5% (obtained for 8 ppm), respectively. Interestingly, an improved response of the developed sensor under humid conditions was observed (tested for 25% relative humidity at 23 °C). The high-performance, in conjunction with its small dimensions, low cost, operation at room temperature, and the possibility of using it as a portable system, makes this sensor a promising candidate for continuous monitoring of NO2 on-site.
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Affiliation(s)
- Daniel Matatagui
- Grupo de Tecnología de Sensores Avanzados (SENSAVAN), Instituto de Tecnologías Físicas y de la Información (ITEFI), CSIC, 28006 Madrid, Spain; (C.C.); (M.d.C.H.)
| | - Carlos Cruz
- Grupo de Tecnología de Sensores Avanzados (SENSAVAN), Instituto de Tecnologías Físicas y de la Información (ITEFI), CSIC, 28006 Madrid, Spain; (C.C.); (M.d.C.H.)
| | - Felix Carrascoso
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), 28049 Madrid, Spain;
| | - Abdullah M. Al-Enizi
- Department of Chemistry, College of Science, King Saud University, Riyadh 11451, Saudi Arabia; (A.M.A.-E.); (A.N.)
| | - Ayman Nafady
- Department of Chemistry, College of Science, King Saud University, Riyadh 11451, Saudi Arabia; (A.M.A.-E.); (A.N.)
| | - Andres Castellanos-Gomez
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), 28049 Madrid, Spain;
| | - María del Carmen Horrillo
- Grupo de Tecnología de Sensores Avanzados (SENSAVAN), Instituto de Tecnologías Físicas y de la Información (ITEFI), CSIC, 28006 Madrid, Spain; (C.C.); (M.d.C.H.)
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12
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Lemarchand J, Bridonneau N, Battaglini N, Carn F, Mattana G, Piro B, Zrig S, NOEL V. Challenges and Prospects of Inkjet Printed Electronics Emerging Applications – a Chemist point of view. Angew Chem Int Ed Engl 2022. [DOI: 10.1002/ange.202200166] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2022]
Affiliation(s)
| | | | | | - Florent Carn
- Universite de Paris UFR Physique Physique FRANCE
| | | | | | | | - Vincent NOEL
- Universite Paris Diderot ITODYS 13 rue J de Baif 75013 Paris FRANCE
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Pham PV, Bodepudi SC, Shehzad K, Liu Y, Xu Y, Yu B, Duan X. 2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges. Chem Rev 2022; 122:6514-6613. [PMID: 35133801 DOI: 10.1021/acs.chemrev.1c00735] [Citation(s) in RCA: 111] [Impact Index Per Article: 55.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
A grand family of two-dimensional (2D) materials and their heterostructures have been discovered through the extensive experimental and theoretical efforts of chemists, material scientists, physicists, and technologists. These pioneering works contribute to realizing the fundamental platforms to explore and analyze new physical/chemical properties and technological phenomena at the micro-nano-pico scales. Engineering 2D van der Waals (vdW) materials and their heterostructures via chemical and physical methods with a suitable choice of stacking order, thickness, and interlayer interactions enable exotic carrier dynamics, showing potential in high-frequency electronics, broadband optoelectronics, low-power neuromorphic computing, and ubiquitous electronics. This comprehensive review addresses recent advances in terms of representative 2D materials, the general fabrication methods, and characterization techniques and the vital role of the physical parameters affecting the quality of 2D heterostructures. The main emphasis is on 2D heterostructures and 3D-bulk (3D) hybrid systems exhibiting intrinsic quantum mechanical responses in the optical, valley, and topological states. Finally, we discuss the universality of 2D heterostructures with representative applications and trends for future electronics and optoelectronics (FEO) under the challenges and opportunities from physical, nanotechnological, and material synthesis perspectives.
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Affiliation(s)
- Phuong V Pham
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Srikrishna Chanakya Bodepudi
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Khurram Shehzad
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Yuan Liu
- School of Physics and Electronics, Hunan University, Hunan 410082, China
| | - Yang Xu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Bin Yu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles (UCLA), Los Angeles, California 90095-1569, United States
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Rana S, Singh V, Singh B. Recent trends in 2D materials and their polymer composites for effectively harnessing mechanical energy. iScience 2022; 25:103748. [PMID: 35118361 PMCID: PMC8800117 DOI: 10.1016/j.isci.2022.103748] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/16/2022] Open
Abstract
Self-powered wearable devices, with the energy harvester as a source of energy that can scavenge the energy from ambient sources present in our surroundings to cater to the energy needs of portable wearable electronics, are becoming more widespread because of their miniaturization and multifunctional characteristics. Triboelectric and piezoelectric nanogenerators are being explored to harvest electrical energy from the mechanical vibrations. Integration of these two effects to fabricate a hybrid nanogenerator can further enhance the output efficiency of the nanogenerator. Here, we have discussed the importance of 2D materials which plays an important role in the fabrication of nanogenerators because of their distinct characteristics, such as, flexibility, mechanical stability, nontoxicity, and biodegradability. This review mainly emphasizes the piezoelectric, triboelectric, and hybrid nanogenerator based on the 2D materials and their van der Waals heterostructure, as well as the effect of polymer-2D composite on the output performance of the nanogenerator.
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Chen X, Fan K, Liu Y, Li Y, Liu X, Feng W, Wang X. Recent Advances in Fluorinated Graphene from Synthesis to Applications: Critical Review on Functional Chemistry and Structure Engineering. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2101665. [PMID: 34658081 DOI: 10.1002/adma.202101665] [Citation(s) in RCA: 46] [Impact Index Per Article: 23.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/01/2021] [Revised: 05/27/2021] [Indexed: 05/11/2023]
Abstract
Fluorinated graphene (FG), as an emerging member of the graphene derivatives family, has attracted wide attention on account of its excellent performances and underlying applications. The introduction of a fluorine atom, with the strongest electronegativity (3.98), greatly changes the electron distribution of graphene, resulting in a series of unique variations in optical, electronic, magnetic, interfacial properties and so on. Herein, recent advances in the study of FG from synthesis to applications are introduced, and the relationship between its structure and properties is summarized in detail. Especially, the functional chemistry of FG has been thoroughly analyzed in recent years, which has opened a universal route for the functionalization and even multifunctionalization of FG toward various graphene derivatives, which further broadens its applications. Moreover, from a particular angle, the structure engineering of FG such as the distribution pattern of fluorine atoms and the regulation of interlayer structure when advanced nanotechnology gets involved is summarized. Notably, the elaborated structure engineering of FG is the key factor to optimize the corresponding properties for potential applications, and is also an up-to-date research hotspot and future development direction. Finally, perspectives and prospects for the problems and challenges in the study of FG are put forward.
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Affiliation(s)
- Xinyu Chen
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Material and Engineering, Sichuan University, Chengdu, 610065, P. R. China
| | - Kun Fan
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Material and Engineering, Sichuan University, Chengdu, 610065, P. R. China
| | - Yang Liu
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Material and Engineering, Sichuan University, Chengdu, 610065, P. R. China
| | - Yu Li
- School of Materials Science and Engineering, Tianjin University, Tianjin, 300354, P. R. China
| | - Xiangyang Liu
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Material and Engineering, Sichuan University, Chengdu, 610065, P. R. China
| | - Wei Feng
- School of Materials Science and Engineering, Tianjin University, Tianjin, 300354, P. R. China
| | - Xu Wang
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Material and Engineering, Sichuan University, Chengdu, 610065, P. R. China
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González JW. Strain-controlled thermoelectric properties of phosphorene-carbon monosulfide hetero-bilayers. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 34:065301. [PMID: 34736227 DOI: 10.1088/1361-648x/ac368f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/22/2021] [Accepted: 11/04/2021] [Indexed: 06/13/2023]
Abstract
The application of strain to 2D materials allows manipulating the electronic, magnetic, and thermoelectric properties. These physical properties are sensitive to slight variations induced by tensile and compressive strain and the uniaxial strain direction. Herein, we take advantage of the reversible semiconductor-metal transition observed in certain monolayers to propose a hetero-bilayer device. We propose to pill up phosphorene (layered black phosphorus) and carbon monosulfide monolayers. In the first, such transition appears for positive strain, while the second appears for negative strain. Our first-principle calculations show that depending on the direction of the applied uniaxial strain; it is possible to achieve reversible control in the layer that behaves as an electronic conductor while the other layer remains as a thermal conductor. The described strain-controlled selectivity could be used in the design of novel devices.
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Affiliation(s)
- J W González
- Departamento de Física, Universidad Técnica Federico Santa María, Casilla Postal 110V, Valparaíso, Chile
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Tantardini C, Kvashnin AG, Gatti C, Yakobson BI, Gonze X. Computational Modeling of 2D Materials under High Pressure and Their Chemical Bonding: Silicene as Possible Field-Effect Transistor. ACS NANO 2021; 15:6861-6871. [PMID: 33730478 DOI: 10.1021/acsnano.0c10609] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
To study the possibility for silicene to be employed as a field-effect transistor (FET) pressure sensor, we explore the chemistry of monolayer and multilayered silicene focusing on the change in hybridization under pressure. Ab initio computations show that the effect of pressure depends greatly on the thickness of the silicene film, but also reveals the influence of real experimental conditions, where the pressure is not hydrostatic. For this purpose, we introduce anisotropic strain states. With pure uniaxial stress applied to silicene layers, a path for sp3 silicon to sp3d silicon is found, unlike with pure hydrostatic pressure. Even with mixed-mode stress (in-plane pressure half of the out-of-plane one), we find no such path. In addition to introducing our theoretical approach to study 2D materials, we show how the hybridization change of silicene under pressure makes it a good FET pressure sensor.
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Affiliation(s)
- Christian Tantardini
- Skolkovo Institute of Science and Technology, 3 Nobel Street, 121025 Moscow, Russian Federation
- Institute of Solid State Chemistry and Mechanochemistry SB RAS, 630128 Novosibirsk, Russian Federation
| | - Alexander G Kvashnin
- Skolkovo Institute of Science and Technology, 3 Nobel Street, 121025 Moscow, Russian Federation
| | - Carlo Gatti
- CNR - Consiglio Nazionale delle Ricerche, SCITEC - Istituto di Scienze e Tecnologie Chimiche "Giulio Natta", Sezione di via Golgi, 19, 20133 Milan, Italy
| | - Boris I Yakobson
- Department of Chemistry, Taif University, Al Hawiyah, Taif 26571, Saudi Arabia
- Department of Materials Science and NanoEngineering and the Smalley Institute for Nanoscale Science and Technology, Rice University, Houston, Texas 77005, United States
| | - Xavier Gonze
- Skolkovo Institute of Science and Technology, 3 Nobel Street, 121025 Moscow, Russian Federation
- Université Catholique de Louvain, Place de l'Université 1, 1348, Ottignies-Louvain-la-Neuve, Belgium
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Tripathi RPN, Gao J, Yang X. Naturally occurring layered mineral franckeite with anisotropic Raman scattering and third-harmonic generation responses. Sci Rep 2021; 11:8510. [PMID: 33875773 PMCID: PMC8055868 DOI: 10.1038/s41598-021-88143-5] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/31/2021] [Accepted: 04/07/2021] [Indexed: 11/09/2022] Open
Abstract
Vertically stacked van der Waals (vdW) heterostructures have introduced a unique way to engineer optical and electronic responses in multifunctional photonic and quantum devices. However, the technical challenges associated with the artificially fabricated vertical heterostructures have emerged as a bottleneck to restrict their proficient utilization, which emphasizes the necessity of exploring naturally occurring vdW heterostructures. As one type of naturally occurring vdW heterostructures, franckeite has recently attracted significant interest in optoelectronic applications, but the understanding of light–matter interactions in such layered mineral is still very limited especially in the nonlinear optical regime. Herein, the anisotropic Raman scattering and third-harmonic generation (THG) from mechanically exfoliated franckeite thin flakes are investigated. The observed highly anisotropic Raman modes and THG emission patterns originate from the low-symmetry crystal structure of franckeite induced by the lattice incommensurability between two constituent stacked layers. The thickness-dependent anisotropic THG response is further analyzed to retrieve the third-order nonlinear susceptibility for franckeite crystal. The results discussed herein not only provide new insights in engineering the nonlinear light–matter interactions in natural vdW heterostructures, but also develop a testbed for designing future miniaturized quantum photonics devices and circuits based on such heterostructures.
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Affiliation(s)
- Ravi P N Tripathi
- Department of Mechanical and Aerospace Engineering, Missouri University of Science and Technology, Rolla, MO, 65409, USA
| | - Jie Gao
- Department of Mechanical and Aerospace Engineering, Missouri University of Science and Technology, Rolla, MO, 65409, USA.
| | - Xiaodong Yang
- Department of Mechanical and Aerospace Engineering, Missouri University of Science and Technology, Rolla, MO, 65409, USA.
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Azpeitia J, Frisenda R, Lee M, Bouwmeester D, Zhang W, Mompean F, van der Zant HSJ, García-Hernández M, Castellanos-Gomez A. Integrating superconducting van der Waals materials on paper substrates. MATERIALS ADVANCES 2021; 2:3274-3281. [PMID: 34124682 PMCID: PMC8142649 DOI: 10.1039/d1ma00118c] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/08/2021] [Accepted: 04/05/2021] [Indexed: 06/12/2023]
Abstract
Paper has the potential to dramatically reduce the cost of electronic components. In fact, paper is 10 000 times cheaper than crystalline silicon, motivating the research to integrate electronic materials on paper substrates. Among the different electronic materials, van der Waals materials are attracting the interest of the scientific community working on paper-based electronics because of the combination of high electrical performance and mechanical flexibility. Up to now, different methods have been developed to pattern conducting, semiconducting and insulating van der Waals materials on paper but the integration of superconductors remains elusive. Here, the deposition of NbSe2, an illustrative van der Waals superconductor, on standard copy paper is demonstrated. The deposited NbSe2 films on paper display superconducting properties (e.g. observation of Meissner effect and resistance drop to zero-resistance state when cooled down below its critical temperature) similar to those of bulk NbSe2.
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Affiliation(s)
- Jon Azpeitia
- Materials Science Factory. Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC) Madrid E-28049 Spain
| | - Riccardo Frisenda
- Materials Science Factory. Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC) Madrid E-28049 Spain
| | - Martin Lee
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1 Delft The Netherlands
| | - Damian Bouwmeester
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1 Delft The Netherlands
| | - Wenliang Zhang
- Materials Science Factory. Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC) Madrid E-28049 Spain
| | - Federico Mompean
- Materials Science Factory. Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC) Madrid E-28049 Spain
| | - Herre S J van der Zant
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1 Delft The Netherlands
| | - Mar García-Hernández
- Materials Science Factory. Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC) Madrid E-28049 Spain
| | - Andres Castellanos-Gomez
- Materials Science Factory. Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC) Madrid E-28049 Spain
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Lee M, Mazaheri A, van der Zant HSJ, Frisenda R, Castellanos-Gomez A. Drawing WS 2 thermal sensors on paper substrates. NANOSCALE 2020; 12:22091-22096. [PMID: 33140811 DOI: 10.1039/d0nr06036d] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Paper based thermoresistive sensors are fabricated by rubbing WS2 powder against a piece of standard copier paper, like the way a pencil is used to write on paper. The abrasion between the layered material and the rough paper surface erodes the material, breaking the weak van der Waals interlayer bonds, yielding a film of interconnected platelets. The resistance of WS2 presents a strong temperature dependence, as expected for a semiconductor material in which charge transport is due to thermally activated carriers. This strong temperature dependence makes the paper supported WS2 devices extremely sensitive to small changes in temperature. This exquisite thermal sensitivity, and their fast response times to sudden temperature changes, is exploited thereby demonstrating the usability of a WS2-on-paper thermal sensor in a respiration monitoring device.
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Affiliation(s)
- Martin Lee
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
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Jiang P, Boulet P, Record MC. Structure-Property Relationships of 2D Ga/In Chalcogenides. NANOMATERIALS (BASEL, SWITZERLAND) 2020; 10:E2188. [PMID: 33147839 PMCID: PMC7693234 DOI: 10.3390/nano10112188] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/19/2020] [Revised: 10/27/2020] [Accepted: 10/27/2020] [Indexed: 01/12/2023]
Abstract
Two-dimensional MX (M = Ga, In; X = S, Se, Te) homo- and heterostructures are of interest in electronics and optoelectronics. Structural, electronic and optical properties of bulk and layered MX and GaX/InX heterostructures have been investigated comprehensively using density functional theory (DFT) calculations. Based on the quantum theory of atoms in molecules, topological analyses of bond degree (BD), bond length (BL) and bond angle (BA) have been detailed for interpreting interatomic interactions, hence the structure-property relationship. The X-X BD correlates linearly with the ratio of local potential and kinetic energy, and decreases as X goes from S to Te. For van der Waals (vdW) homo- and heterostructures of GaX and InX, a cubic relationship between microscopic interatomic interaction and macroscopic electromagnetic behavior has been established firstly relating to weighted absolute BD summation and static dielectric constant. A decisive role of vdW interaction in layer-dependent properties has been identified. The GaX/InX heterostructures have bandgaps in the range 0.23-1.49 eV, absorption coefficients over 10-5 cm-1 and maximum conversion efficiency over 27%. Under strain, discordant BD evolutions are responsible for the exclusively distributed electrons and holes in sublayers of GaX/InX. Meanwhile, the interlayer BA adjustment with lattice mismatch explains the constraint-free lattice of the vdW heterostructure.
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Affiliation(s)
- Pingping Jiang
- Aix-Marseille University, CNRS, MADIREL, 13013 Marseille, France;
| | - Pascal Boulet
- Aix-Marseille University, CNRS, MADIREL, 13013 Marseille, France;
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