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Tsang CS, Zheng X, Ly TH, Zhao J. Recent progresses in transmission electron microscopy studies of two-dimensional ferroelectrics. Micron 2024; 185:103678. [PMID: 38941681 DOI: 10.1016/j.micron.2024.103678] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/19/2024] [Revised: 06/03/2024] [Accepted: 06/13/2024] [Indexed: 06/30/2024]
Abstract
The rich potential of two-dimensional materials endows them with superior properties suitable for a wide range of applications, thereby attracting substantial interest across various fields. The ongoing trend towards device miniaturization aligns with the development of materials at progressively smaller scales, aiming to achieve higher integration density in electronics. In the realm of nano-scaling ferroelectric phenomena, numerous new two-dimensional ferroelectric materials have been predicted theoretically and subsequently validated through experimental confirmation. However, the capabilities of conventional tools, such as electrical measurements, are limited in providing a comprehensive investigation into the intrinsic origins of ferroelectricity and its interactions with structural factors. These factors include stacking, doping, functionalization, and defects. Consequently, the progress of potential applications, such as high-density memory devices, energy conversion systems, sensing technologies, catalysis, and more, is impeded. In this paper, we present a review of recent research that employs advanced transmission electron microscopy (TEM) techniques for the direct visualization and analysis of ferroelectric domains, domain walls, and other crucial features at the atomic level within two-dimensional materials. We discuss the essential interplay between structural characteristics and ferroelectric properties on the nanoscale, which facilitates understanding of the complex relationships governing their behavior. By doing so, we aim to pave the way for future innovative applications in this field.
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Affiliation(s)
- Chi Shing Tsang
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China; Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong, China
| | - Xiaodong Zheng
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
| | - Thuc Hue Ly
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong, China; Department of Chemistry and State Key Laboratory of Marine Pollution, City University of Hong Kong, Hong Kong, China; City University of Hong Kong Shenzhen Research Institute, Shenzhen, China.
| | - Jiong Zhao
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China; The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China; The Research Institute for Advanced Manufacturing, The Hong Kong polytechnic University, Hong Kong, China.
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2
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Li H, Li Q, Sun T, Zhou Y, Han ST. Recent advances in artificial neuromorphic applications based on perovskite composites. MATERIALS HORIZONS 2024. [PMID: 39140168 DOI: 10.1039/d4mh00574k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/15/2024]
Abstract
High-performance perovskite materials with excellent physical, electronic, and optical properties play a significant role in artificial neuromorphic devices. However, the development of perovskites in microelectronics is inevitably hindered by their intrinsic non-ideal properties, such as high defect density, environmental sensitivity, and toxicity. By leveraging materials engineering, integrating various materials with perovskites to leverage their mutual strengths presents great potential to enhance ion migration, energy level alignment, photoresponsivity, and surface passivation, thereby advancing optoelectronic and neuromorphic device development. This review initially provides an overview of perovskite materials across different dimensions, highlighting their physical properties and detailing their applications and metrics in two- and three-terminal devices. Subsequently, we comprehensively summarize the application of perovskites in combination with other materials, including organics, nanomaterials, oxides, ferroelectrics, and crystalline porous materials (CPMs), to develop advanced devices such as memristors, transistors, photodetectors, sensors, light-emitting diodes (LEDs), and artificial neuromorphic systems. Lastly, we outline the challenges and future research directions in synthesizing perovskite composites for neuromorphic devices. Through the review and analysis, we aim to broaden the utilization of perovskites and their composites in neuromorphic research, offering new insights and approaches for grasping the intricate physical working mechanisms and functionalities of perovskites.
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Affiliation(s)
- Huaxin Li
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Qingxiu Li
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Tao Sun
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
| | - Su-Ting Han
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong 999077, P. R. China.
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3
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Chen J, Sun MY, Wang ZH, Zhang Z, Zhang K, Wang S, Zhang Y, Wu X, Ren TL, Liu H, Han L. Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor. NANO-MICRO LETTERS 2024; 16:264. [PMID: 39120835 PMCID: PMC11315877 DOI: 10.1007/s40820-024-01461-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/10/2024] [Accepted: 06/13/2024] [Indexed: 08/10/2024]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDs) allow for atomic-scale manipulation, challenging the conventional limitations of semiconductor materials. This capability may overcome the short-channel effect, sparking significant advancements in electronic devices that utilize 2D TMDs. Exploring the dimension and performance limits of transistors based on 2D TMDs has gained substantial importance. This review provides a comprehensive investigation into these limits of the single 2D-TMD transistor. It delves into the impacts of miniaturization, including the reduction of channel length, gate length, source/drain contact length, and dielectric thickness on transistor operation and performance. In addition, this review provides a detailed analysis of performance parameters such as source/drain contact resistance, subthreshold swing, hysteresis loop, carrier mobility, on/off ratio, and the development of p-type and single logic transistors. This review details the two logical expressions of the single 2D-TMD logic transistor, including current and voltage. It also emphasizes the role of 2D TMD-based transistors as memory devices, focusing on enhancing memory operation speed, endurance, data retention, and extinction ratio, as well as reducing energy consumption in memory devices functioning as artificial synapses. This review demonstrates the two calculating methods for dynamic energy consumption of 2D synaptic devices. This review not only summarizes the current state of the art in this field but also highlights potential future research directions and applications. It underscores the anticipated challenges, opportunities, and potential solutions in navigating the dimension and performance boundaries of 2D transistors.
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Affiliation(s)
- Jing Chen
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China
- BNRist, Tsinghua University, Beijing, 100084, People's Republic of China
| | - Ming-Yuan Sun
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China
| | - Zhen-Hua Wang
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China
| | - Zheng Zhang
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China
| | - Kai Zhang
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China
| | - Shuai Wang
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China
| | - Yu Zhang
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China
- Shenzhen Research Institute of Shandong University, Shenzhen, 518057, People's Republic of China
| | - Xiaoming Wu
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, People's Republic of China
| | - Tian-Ling Ren
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, People's Republic of China.
| | - Hong Liu
- State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, Shandong, People's Republic of China
| | - Lin Han
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, Shandong, People's Republic of China.
- State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, Shandong, People's Republic of China.
- Shenzhen Research Institute of Shandong University, Shenzhen, 518057, People's Republic of China.
- Shandong Engineering Research Center of Biomarker and Artificial Intelligence Application, Jinan, 250100, People's Republic of China.
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4
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Jiang H, Li L, Wu Y, Duan R, Yi K, Wu L, Zhu C, Luo L, Xu M, Zheng L, Gan X, Zhao W, Wang X, Liu Z. Vapor Deposition of Bilayer 3R MoS 2 with Room-Temperature Ferroelectricity. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2400670. [PMID: 38830613 DOI: 10.1002/adma.202400670] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/14/2024] [Revised: 05/17/2024] [Indexed: 06/05/2024]
Abstract
Two-dimensional ultrathin ferroelectrics have attracted much interest due to their potential application in high-density integration of non-volatile memory devices. Recently, 2D van der Waals ferroelectric based on interlayer translation has been reported in twisted bilayer h-BN and transition metal dichalcogenides (TMDs). However, sliding ferroelectricity is not well studied in non-twisted homo-bilayer TMD grown directly by chemical vapor deposition (CVD). In this paper, for the first time, experimental observation of a room-temperature out-of-plane ferroelectric switch in semiconducting bilayer 3R MoS2 synthesized by reverse-flow CVD is reported. Piezoelectric force microscopy (PFM) hysteretic loops and first principle calculations demonstrate that the ferroelectric nature and polarization switching processes are based on interlayer sliding. The vertical Au/3R MoS2/Pt device exhibits a switchable diode effect. Polarization modulated Schottky barrier height and polarization coupling of interfacial deep states trapping/detrapping may serve in coordination to determine switchable diode effect. The room-temperature ferroelectricity of CVD-grown MoS2 will proceed with the potential wafer-scale integration of 2D TMDs in the logic circuit.
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Affiliation(s)
- Hanjun Jiang
- Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Lei Li
- Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
- Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, China
- MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, China
| | - Yao Wu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Ruihuan Duan
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Kongyang Yi
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Lishu Wu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Chao Zhu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Lei Luo
- Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Manzhang Xu
- Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
- Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, China
- MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, China
| | - Lu Zheng
- Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
- Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, China
- MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, China
| | - Xuetao Gan
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, China
| | - Wu Zhao
- School of Information Science and Technology, Northwest University, Xi'an, Shaanxi, 710127, China
| | - Xuewen Wang
- Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
- Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, China
- MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, China
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
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5
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Yasuda K, Zalys-Geller E, Wang X, Bennett D, Cheema SS, Watanabe K, Taniguchi T, Kaxiras E, Jarillo-Herrero P, Ashoori R. Ultrafast high-endurance memory based on sliding ferroelectrics. Science 2024; 385:53-56. [PMID: 38843354 DOI: 10.1126/science.adp3575] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/21/2024] [Accepted: 05/28/2024] [Indexed: 07/06/2024]
Abstract
The persistence of voltage-switchable collective electronic phenomena down to the atomic scale has extensive implications for area- and energy-efficient electronics, especially in emerging nonvolatile memory technology. We investigate the performance of a ferroelectric field-effect transistor (FeFET) based on sliding ferroelectricity in bilayer boron nitride at room temperature. Sliding ferroelectricity represents a different form of atomically thin two-dimensional (2D) ferroelectrics, characterized by the switching of out-of-plane polarization through interlayer sliding motion. We examined the FeFET device employing monolayer graphene as the channel layer, which demonstrated ultrafast switching speeds on the nanosecond scale and high endurance exceeding 1011 switching cycles, comparable to state-of-the-art FeFET devices. These characteristics highlight the potential of 2D sliding ferroelectrics for inspiring next-generation nonvolatile memory technology.
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Affiliation(s)
- Kenji Yasuda
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02138, USA
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14850, USA
| | - Evan Zalys-Geller
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02138, USA
| | - Xirui Wang
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02138, USA
| | - Daniel Bennett
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138, USA
| | - Suraj S Cheema
- Research Laboratory of Electronics, MA Institute of Technology, Cambridge, MA, USA
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Efthimios Kaxiras
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138, USA
- Department of Physics, Harvard University, Cambridge, MA 02138, USA
| | - Pablo Jarillo-Herrero
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02138, USA
| | - Raymond Ashoori
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02138, USA
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6
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Bian R, He R, Pan E, Li Z, Cao G, Meng P, Chen J, Liu Q, Zhong Z, Li W, Liu F. Developing fatigue-resistant ferroelectrics using interlayer sliding switching. Science 2024; 385:57-62. [PMID: 38843352 DOI: 10.1126/science.ado1744] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/19/2024] [Accepted: 05/24/2024] [Indexed: 07/06/2024]
Abstract
Ferroelectric materials have switchable electrical polarization that is appealing for high-density nonvolatile memories. However, inevitable fatigue hinders practical applications of these materials. Fatigue-free ferroelectric switching could dramatically improve the endurance of such devices. We report a fatigue-free ferroelectric system based on the sliding ferroelectricity of bilayer 3R molybdenum disulfide (3R-MoS2). The memory performance of this ferroelectric device does not show the wake-up effect at low cycles or a substantial fatigue effect after 106 switching cycles under different pulse widths. The total stress time of the device under an electric field is up to 105 s, which is long relative to other devices. Our theoretical calculations reveal that the fatigue-free feature of sliding ferroelectricity is due to the immobile charge defects in sliding ferroelectricity.
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Affiliation(s)
- Renji Bian
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China
| | - Ri He
- Key Laboratory of Magnetic Materials Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Er Pan
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Zefen Li
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Guiming Cao
- School of Information Science and Technology, Xi Chang University, Xi Chang 615013, China
- Key Laboratory of Liangshan Agriculture Digital Transformation of Sichuan Provincial Education Department, Xi Chang University, Xi Chang 615013, China
| | - Peng Meng
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Jiangang Chen
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Qing Liu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Zhicheng Zhong
- Key Laboratory of Magnetic Materials Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- Department of Physics, University of Science and Technology of China, Hefei 230026, China
- Suzhou Institute for Advanced Research, University of Science and Technology of China, Suzhou 215123, China
| | - Wenwu Li
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai 200433, China
- State Key Laboratory of Photovoltaic Science and Technology, Department of Materials Science, Fudan University, Shanghai 200433, China
| | - Fucai Liu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China
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7
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Chen C, Zhou Y, Tong L, Pang Y, Xu J. Emerging 2D Ferroelectric Devices for In-Sensor and In-Memory Computing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2400332. [PMID: 38739927 DOI: 10.1002/adma.202400332] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/08/2024] [Revised: 04/19/2024] [Indexed: 05/16/2024]
Abstract
The quantity of sensor nodes within current computing systems is rapidly increasing in tandem with the sensing data. The presence of a bottleneck in data transmission between the sensors, computing, and memory units obstructs the system's efficiency and speed. To minimize the latency of data transmission between units, novel in-memory and in-sensor computing architectures are proposed as alternatives to the conventional von Neumann architecture, aiming for data-intensive sensing and computing applications. The integration of 2D materials and 2D ferroelectric materials has been expected to build these novel sensing and computing architectures due to the dangling-bond-free surface, ultra-fast polarization flipping, and ultra-low power consumption of the 2D ferroelectrics. Here, the recent progress of 2D ferroelectric devices for in-sensing and in-memory neuromorphic computing is reviewed. Experimental and theoretical progresses on 2D ferroelectric devices, including passive ferroelectrics-integrated 2D devices and active ferroelectrics-integrated 2D devices, are reviewed followed by the integration of perception, memory, and computing application. Notably, 2D ferroelectric devices have been used to simulate synaptic weights, neuronal model functions, and neural networks for image processing. As an emerging device configuration, 2D ferroelectric devices have the potential to expand into the sensor-memory and computing integration application field, leading to new possibilities for modern electronics.
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Affiliation(s)
- Chunsheng Chen
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China
| | - Yaoqiang Zhou
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China
| | - Lei Tong
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China
| | - Yue Pang
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China
| | - Jianbin Xu
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China
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Cheng J, Yuan JH, Li PY, Wang J, Wang Y, Zhang YW, Zheng Y, Zhang P. Applying the Wake-Up-like Effect to Enhance the Capabilities of Two-Dimensional Ferroelectric Field-Effect Transistors. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38712685 DOI: 10.1021/acsami.4c06177] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/08/2024]
Abstract
For traditional ferroelectric field-effect transistors (FeFETs), enhancing the polarization domain of bulk ferroelectric materials is essential to improve device performance. However, there has been limited investigation into the enhancement of polarization field in two-dimensional (2D) ferroelectric material such as CuInP2S6 (CIPS). In this study, similar to bulk ferroelectric materials, CIPS exhibited enhanced polarization field upon application of external cyclic voltage. Moreover, unlike traditional ferroelectric materials, the polarization enhancement of CIPS is not due to redistribution of the defect but rather originates from a mechanism: the long-distance migration of Cu ions. We termed this mechanism the "wake-up-like effect". After incorporating the wake-up-like effect into the graphene/CIPS/WSe2 FeFET device, we successfully increased the hysteresis window and enhanced the current on/off ratio by 4 orders of magnitude. Moreover, the FeFET yielded remarkable achievements, such as multilevel nonvolatile memory with 21 distinct conductance levels, a high on/off ratio exceeding 106, a long retention time exceeding 103 s, and neuromorphic computing with 93% accuracy at recognizing handwritten digits. Introducing the wake-up-like effect to 2D CIPS may pave the way for innovative approaches to achieve advanced multilevel nonvolatile memory and neuromorphic computing capabilities for next-generation micro-nanoelectronic devices.
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Affiliation(s)
- Jie Cheng
- The State Key Laboratory of Precision Manufacturing for Extreme Service Performance, School of Mechanical and Electrical Engineering, Central South University, Changsha 410073, China
| | - Jun-Hui Yuan
- Department of Physics, School of Science, Wuhan University of Technology, Wuhan 430070, China
| | - Pei Yue Li
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, School of Integrated Circuits, Peking University, Beijing 100871, China
| | - Jiafu Wang
- Department of Physics, School of Science, Wuhan University of Technology, Wuhan 430070, China
| | - Yuan Wang
- Institute of Microelectronics, State Key Laboratory of Analog and Mixed-Signal VLSI, University of Macau, Taipa 999078, Macau, China
| | - You Wei Zhang
- MOE Key Laboratory of Fundamental Physical Quantities Measurement & Hubei Key Laboratory of Gravitation and Quantum Physics, PGMF and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Yu Zheng
- The State Key Laboratory of Precision Manufacturing for Extreme Service Performance, School of Mechanical and Electrical Engineering, Central South University, Changsha 410073, China
| | - Pan Zhang
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, School of Integrated Circuits, Peking University, Beijing 100871, China
- Institute of Microelectronics, State Key Laboratory of Analog and Mixed-Signal VLSI, University of Macau, Taipa 999078, Macau, China
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9
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Li S, Wang F, Wang Y, Yang J, Wang X, Zhan X, He J, Wang Z. Van der Waals Ferroelectrics: Theories, Materials, and Device Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2301472. [PMID: 37363893 DOI: 10.1002/adma.202301472] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/15/2023] [Revised: 06/19/2023] [Indexed: 06/28/2023]
Abstract
In recent years, an increasing number of 2D van der Waals (vdW) materials are theory-predicted or laboratory-validated to possess in-plane (IP) and/or out-of-plane (OOP) spontaneous ferroelectric polarization. Due to their dangling-bond-free surfaces, interlayer charge coupling, robust polarization, tunable energy band structures, and compatibility with silicon-based technologies, vdW ferroelectric materials exhibit great promise in ferroelectric memories, neuromorphic computing, nanogenerators, photovoltaic devices, spintronic devices, and so on. Here, the very recent advances in the field of vdW ferroelectrics (FEs) are reviewed. First, theories of ferroelectricity are briefly discussed. Then, a comprehensive summary of the non-stacking vdW ferroelectric materials is provided based on their crystal structures and the emerging sliding ferroelectrics. In addition, their potential applications in various branches/frontier fields are enumerated, with a focus on artificial intelligence. Finally, the challenges and development prospects of vdW ferroelectrics are discussed.
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Affiliation(s)
- Shuhui Li
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Feng Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Yanrong Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Jia Yang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Xinyuan Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Xueying Zhan
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Jun He
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Zhenxing Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
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10
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Xu B, Guo D, Dong W, Gao H, Zhu P, Wang Z, Watanabe K, Taniguchi T, Luo Z, Zheng F, Zheng S, Zhou J. Gap State-Modulated Van Der Waals Short-Term Memory with Broad Band Negative Photoconductance. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2309626. [PMID: 38098431 DOI: 10.1002/smll.202309626] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/23/2023] [Revised: 11/05/2023] [Indexed: 05/25/2024]
Abstract
Floating gate memory (FGM), composed of van der Waals (vdW) junctions with an atomically thin floating layer for charge storage, is widely employed to develop logic-in memories and in-sensor computing devices. Most research efforts of FGM are spent on achieving long-term charge storage and fast reading/writing for flash and random-access memory. However, dynamic modulation of memory time via a tunneling barrier and vdW interfaces, which is critical for synaptic computing and machine vision, is still lacking. Here, a van der Waals short-term memory with tunable memory windows and retention times from milliseconds to thousands of seconds is reported, which is approximately exponentially proportional to the thickness h-BN (hexagonal boron nitride) barrier. The specific h-BN barrier with fruitful gap states provides charge release channels for trapped charges, making the vdW device switchable between positive photoconductance and negative photoconductance with a broadband light from IR to UV range. The dynamic short-term memory with tunable photo response highlights the design strategy of novel vdW memory vis interface engineering for further intelligent information storage and optoelectronic detection.
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Affiliation(s)
- Boyu Xu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Dan Guo
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Weikang Dong
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Huiying Gao
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Peng Zhu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Zhiwei Wang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Kenji Watanabe
- National Institute for Materials Science, 1-1 Namiki, Tsukuba, 303-0044, Japan
| | - Takashi Taniguchi
- National Institute for Materials Science, 1-1 Namiki, Tsukuba, 303-0044, Japan
| | - Zhaochu Luo
- State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, China
| | - Fawei Zheng
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Shoujun Zheng
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Jiadong Zhou
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing, 100081, China
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11
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Wang L, Qi J, Wei W, Wu M, Zhang Z, Li X, Sun H, Guo Q, Cao M, Wang Q, Zhao C, Sheng Y, Liu Z, Liu C, Wu M, Xu Z, Wang W, Hong H, Gao P, Wu M, Wang ZJ, Xu X, Wang E, Ding F, Zheng X, Liu K, Bai X. Bevel-edge epitaxy of ferroelectric rhombohedral boron nitride single crystal. Nature 2024; 629:74-79. [PMID: 38693415 DOI: 10.1038/s41586-024-07286-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/17/2023] [Accepted: 03/08/2024] [Indexed: 05/03/2024]
Abstract
Within the family of two-dimensional dielectrics, rhombohedral boron nitride (rBN) is considerably promising owing to having not only the superior properties of hexagonal boron nitride1-4-including low permittivity and dissipation, strong electrical insulation, good chemical stability, high thermal conductivity and atomic flatness without dangling bonds-but also useful optical nonlinearity and interfacial ferroelectricity originating from the broken in-plane and out-of-plane centrosymmetry5-23. However, the preparation of large-sized single-crystal rBN layers remains a challenge24-26, owing to the requisite unprecedented growth controls to coordinate the lattice orientation of each layer and the sliding vector of every interface. Here we report a facile methodology using bevel-edge epitaxy to prepare centimetre-sized single-crystal rBN layers with exact interlayer ABC stacking on a vicinal nickel surface. We realized successful accurate fabrication over a single-crystal nickel substrate with bunched step edges of the terrace facet (100) at the bevel facet (110), which simultaneously guided the consistent boron-nitrogen bond orientation in each BN layer and the rhombohedral stacking of BN layers via nucleation near each bevel facet. The pure rhombohedral phase of the as-grown BN layers was verified, and consequently showed robust, homogeneous and switchable ferroelectricity with a high Curie temperature. Our work provides an effective route for accurate stacking-controlled growth of single-crystal two-dimensional layers and presents a foundation for applicable multifunctional devices based on stacked two-dimensional materials.
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Affiliation(s)
- Li Wang
- Institute of Physics, Chinese Academy of Sciences, Beijing, China.
| | - Jiajie Qi
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Wenya Wei
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics, South China Normal University, Guangzhou, China
| | - Mengqi Wu
- School of Engineering, Westlake University, Hangzhou, China
| | - Zhibin Zhang
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Xiaomin Li
- Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Huacong Sun
- Institute of Physics, Chinese Academy of Sciences, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China
| | - Quanlin Guo
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Meng Cao
- Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Qinghe Wang
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Chao Zhao
- Shenzhen Institute of Advanced Technology, Shenzhen, China
| | - Yuxuan Sheng
- School of Physics, Huazhong University of Science and Technology, Wuhan, China
| | - Zhetong Liu
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing, China
| | - Can Liu
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing, China
| | - Muhong Wu
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing, China
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Centre for Light-Element Advanced Materials, Peking University, Beijing, China
- Songshan Lake Materials Laboratory, Dongguan, China
| | - Zhi Xu
- Songshan Lake Materials Laboratory, Dongguan, China
| | - Wenlong Wang
- Institute of Physics, Chinese Academy of Sciences, Beijing, China
- Songshan Lake Materials Laboratory, Dongguan, China
| | - Hao Hong
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Centre for Light-Element Advanced Materials, Peking University, Beijing, China
| | - Peng Gao
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing, China
| | - Menghao Wu
- School of Physics, Huazhong University of Science and Technology, Wuhan, China
| | - Zhu-Jun Wang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, China
| | - Xiaozhi Xu
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics, South China Normal University, Guangzhou, China
| | - Enge Wang
- Institute of Physics, Chinese Academy of Sciences, Beijing, China
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Centre for Light-Element Advanced Materials, Peking University, Beijing, China
- Songshan Lake Materials Laboratory, Dongguan, China
- Tsientang Institute for Advanced Study, Hangzhou, China
| | - Feng Ding
- Shenzhen Institute of Advanced Technology, Shenzhen, China.
| | - Xiaorui Zheng
- School of Engineering, Westlake University, Hangzhou, China.
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China.
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Centre for Light-Element Advanced Materials, Peking University, Beijing, China.
- Songshan Lake Materials Laboratory, Dongguan, China.
| | - Xuedong Bai
- Institute of Physics, Chinese Academy of Sciences, Beijing, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China.
- Songshan Lake Materials Laboratory, Dongguan, China.
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12
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Jo J, Mañas-Valero S, Coronado E, Casanova F, Gobbi M, Hueso LE. Nonvolatile Electric Control of Antiferromagnet CrSBr. NANO LETTERS 2024; 24:4471-4477. [PMID: 38587318 DOI: 10.1021/acs.nanolett.4c00348] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/09/2024]
Abstract
van der Waals magnets are emerging as a promising material platform for electric field control of magnetism, offering a pathway toward the elimination of external magnetic fields from spintronic devices. A further step is the integration of such magnets with electrical gating components that would enable nonvolatile control of magnetic states. However, this approach remains unexplored for antiferromagnets, despite their growing significance in spintronics. Here, we demonstrate nonvolatile electric field control of magnetoelectric characteristics in van der Waals antiferromagnet CrSBr. We integrate a CrSBr channel in a flash-memory architecture featuring charge trapping graphene multilayers. The electrical gate operation triggers a nonvolatile 200% change in the antiferromagnetic state of CrSBr resistance by manipulating electron accumulation/depletion. Moreover, the nonvolatile gate modulates the metamagnetic transition field of CrSBr and the magnitude of magnetoresistance. Our findings highlight the potential of manipulating magnetic properties of antiferromagnetic semiconductors in a nonvolatile way.
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Affiliation(s)
- Junhyeon Jo
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastian, Basque Country, Spain
| | - Samuel Mañas-Valero
- Instituto de Ciencia Molecular (ICMol) Universitat de València, Catedrático José Beltrán 2, Paterna 46980, Spain
| | - Eugenio Coronado
- Instituto de Ciencia Molecular (ICMol) Universitat de València, Catedrático José Beltrán 2, Paterna 46980, Spain
| | - Fèlix Casanova
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastian, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, 48013 Bilbao, Basque Country, Spain
| | - Marco Gobbi
- IKERBASQUE, Basque Foundation for Science, 48013 Bilbao, Basque Country, Spain
- Centro de Física de Materiales (CFM-MPC) Centro Mixto CSIC-UPV/EHU, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Luis E Hueso
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastian, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, 48013 Bilbao, Basque Country, Spain
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13
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Li D, Qin JK, Zhu B, Yue LQ, Huang PY, Zhu C, Zhou F, Zhen L, Xu CY. Intercorrelated Ferroelectricity and Bulk Photovoltaic Effect in Two-Dimensional Sn 2P 2S 6 Semiconductor for Polarization-Sensitive Photodetection. ACS NANO 2024; 18:9636-9644. [PMID: 38497667 DOI: 10.1021/acsnano.4c00382] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/19/2024]
Abstract
A two-dimensional (2D) ferroelectric semiconductor, which is coupled with photosensitivity and room-temperature ferroelectricity, provides the possibility of coordinated conductance modulation by both electric field and light illumination and is promising for triggering the revolution of optoelectronics for monolithic multifunctional integration. Here, we report that semiconducting Sn2P2S6 crystals can be achieved in a 2D morphology using a chemical vapor transport approach with the assistant of space confinement and experimentally demonstrate the robust ferroelectricity in atomic-thin Sn2P2S6 nanosheet at room temperature. The intercorrelated programming of ferroelectric order along out-of-plane (OOP) and in-plane (IP) directions enables a tunable bulk photovoltaic (BPV) effect through multidirectional electrical control. By combining the capability of anisotropic in-plane optical absorption, a highly integrated Sn2P2S6 optoelectronic device vertically sandwiched with graphene electrodes yields the polarization-dependent open-circuit photovoltage with a dichroic ratio of 2.0 under 405 nm light illumination. The reintroduction of ferroelectric Sn2P2S6 to the 2D asymmetric semiconductor family provides possibilities to hardware implement of the self-powered polarization-sensitive photodetection and spotlights the promising applications for next-generation photovoltaic devices.
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Affiliation(s)
- Dong Li
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China
| | - Jing-Kai Qin
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China
- School of Integrated Circuits, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China
| | - Bingxuan Zhu
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China
| | - Ling-Qing Yue
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China
| | - Pei-Yu Huang
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China
| | - Chengyi Zhu
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China
| | - Feichi Zhou
- School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Liang Zhen
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China
- MOE Key Laboratory of Micro-Systems and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin 150080, China
| | - Cheng-Yan Xu
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China
- MOE Key Laboratory of Micro-Systems and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin 150080, China
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14
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Yin L, Cheng R, Ding J, Jiang J, Hou Y, Feng X, Wen Y, He J. Two-Dimensional Semiconductors and Transistors for Future Integrated Circuits. ACS NANO 2024; 18:7739-7768. [PMID: 38456396 DOI: 10.1021/acsnano.3c10900] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/09/2024]
Abstract
Silicon transistors are approaching their physical limit, calling for the emergence of a technological revolution. As the acknowledged ultimate version of transistor channels, 2D semiconductors are of interest for the development of post-Moore electronics due to their useful properties and all-in-one potentials. Here, the promise and current status of 2D semiconductors and transistors are reviewed, from materials and devices to integrated applications. First, we outline the evolution and challenges of silicon-based integrated circuits, followed by a detailed discussion on the properties and preparation strategies of 2D semiconductors and van der Waals heterostructures. Subsequently, the significant progress of 2D transistors, including device optimization, large-scale integration, and unconventional devices, are presented. We also examine 2D semiconductors for advanced heterogeneous and multifunctional integration beyond CMOS. Finally, the key technical challenges and potential strategies for 2D transistors and integrated circuits are also discussed. We envision that the field of 2D semiconductors and transistors could yield substantial progress in the upcoming years and hope this review will trigger the interest of scientists planning their next experiment.
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Affiliation(s)
- Lei Yin
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jiahui Ding
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jian Jiang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Yutang Hou
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Xiaoqiang Feng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
- Wuhan Institute of Quantum Technology, Wuhan 430206, People's Republic of China
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15
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Zhou Y, Yang C, Fu X, Liu Y, Yang Y, Wu Y, Ge C, Min T, Zeng K, Li T. Optical Modulation of MoTe 2/Ferroelectric Heterostructure via Interface Doping. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38411594 DOI: 10.1021/acsami.3c18179] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/28/2024]
Abstract
Optical modulation through interface doping offers a convenient and efficient way to control ferroelectric polarization, thereby advancing the utilization of ferroelectric heterostructures in nanoelectronic and optoelectronic devices. In this work, we fabricated heterostructures of MoTe2/BaTiO3/La0.7Sr0.3MnO3 (MoTe2/BTO/LSMO) and demonstrated opposite ultraviolet (UV) light-induced polarization switching behaviors depending on the varied thicknesses of MoTe2. The thickness-dependent band structure of MoTe2 film results in interface doping with opposite polarity in the respective heterostructures. The polarization field of BTO interacts with the interface charges, and an enhanced effective built-in field (Ebi) can trigger the transfer of massive UV light-induced carriers in both MoTe2 and BTO films. As a result, the interplay among the contact field of MoTe2/BTO, the polarization field, and the optically excited carriers determines the UV light-induced polarization switching behavior of the heterostructures. In addition, the electric transport characteristics of MoTe2/BTO/LSMO heterostructures reveal the interface barrier height and Ebi under opposite polarization states, as well as the presence of inherent in-gap trap states in MoTe2 and BTO films. These findings represent a further step toward achieving multifield modulation of the ferroelectric polarization and promote the potential applications in optoelectronic, logic, memory, and synaptic ferroelectric devices.
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Affiliation(s)
- Yuqing Zhou
- Center for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, Department of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
- Department of Mechanical Engineering, National University of Singapore, Singapore 117576, Singapore
| | - Chao Yang
- Center for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, Department of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Xingke Fu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Yadong Liu
- Center for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, Department of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Yulin Yang
- Center for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, Department of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Yongyi Wu
- Center for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, Department of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Chen Ge
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Tai Min
- Center for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, Department of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Kaiyang Zeng
- Department of Mechanical Engineering, National University of Singapore, Singapore 117576, Singapore
| | - Tao Li
- Center for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, Department of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
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16
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Wu G, Xiang L, Wang W, Yao C, Yan Z, Zhang C, Wu J, Liu Y, Zheng B, Liu H, Hu C, Sun X, Zhu C, Wang Y, Xiong X, Wu Y, Gao L, Li D, Pan A, Li S. Hierarchical processing enabled by 2D ferroelectric semiconductor transistor for low-power and high-efficiency AI vision system. Sci Bull (Beijing) 2024; 69:473-482. [PMID: 38123429 DOI: 10.1016/j.scib.2023.12.027] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/05/2023] [Revised: 11/23/2023] [Accepted: 12/04/2023] [Indexed: 12/23/2023]
Abstract
The growth of data and Internet of Things challenges traditional hardware, which encounters efficiency and power issues owing to separate functional units for sensors, memory, and computation. In this study, we designed an α-phase indium selenide (α-In2Se3) transistor, which is a two-dimensional ferroelectric semiconductor as the channel material, to create artificial optic-neural and electro-neural synapses, enabling cutting-edge processing-in-sensor (PIS) and computing-in-memory (CIM) functionalities. As an optic-neural synapse for low-level sensory processing, the α-In2Se3 transistor exhibits a high photoresponsivity (2855 A/W) and detectivity (2.91 × 1014 Jones), facilitating efficient feature extraction. For high-level processing tasks as an electro-neural synapse, it offers a fast program/erase speed of 40 ns/50 µs and ultralow energy consumption of 0.37 aJ/spike. An AI vision system using α-In2Se3 transistors has been demonstrated. It achieved an impressive recognition accuracy of 92.63% within 12 epochs owing to the synergistic combination of the PIS and CIM functionalities. This study demonstrates the potential of the α-In2Se3 transistor in future vision hardware, enhancing processing, power efficiency, and AI applications.
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Affiliation(s)
- Guangcheng Wu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China
| | - Li Xiang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China
| | - Wenqiang Wang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China
| | - Chengdong Yao
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China
| | - Zeyi Yan
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan 411105, China
| | - Cheng Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China
| | - Jiaxin Wu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China
| | - Yong Liu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China
| | - Biyuan Zheng
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China
| | - Huawei Liu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China
| | - Chengwei Hu
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan 411105, China
| | - Xingxia Sun
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China
| | - Chenguang Zhu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China
| | - Yizhe Wang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China
| | - Xiong Xiong
- School of Integrated Circuits, Peking University, Beijing 100871, China
| | - Yanqing Wu
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan 411105, China; School of Integrated Circuits, Peking University, Beijing 100871, China
| | - Liang Gao
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Dong Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China.
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China.
| | - Shengman Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China.
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17
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Yang D, Liang J, Wu J, Xiao Y, Dadap JI, Watanabe K, Taniguchi T, Ye Z. Non-volatile electrical polarization switching via domain wall release in 3R-MoS 2 bilayer. Nat Commun 2024; 15:1389. [PMID: 38360848 PMCID: PMC10869714 DOI: 10.1038/s41467-024-45709-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/26/2023] [Accepted: 02/02/2024] [Indexed: 02/17/2024] Open
Abstract
Understanding the nature of sliding ferroelectricity is of fundamental importance for the discovery and application of two-dimensional ferroelectric materials. In this work, we investigate the phenomenon of switchable polarization in a bilayer MoS2 with natural rhombohedral stacking, where the spontaneous polarization is coupled with excitonic effects through asymmetric interlayer coupling. Using optical spectroscopy and imaging techniques, we observe how a released domain wall switches the polarization of a large single domain. Our results highlight the importance of domain walls in the polarization switching of non-twisted rhombohedral transition metal dichalcogenides and open new opportunities for the non-volatile control of their optical response.
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Affiliation(s)
- Dongyang Yang
- Department of Physics and Astronomy, The University of British Columbia, Vancouver, BC, Canada
- Quantum Matter Institute, The University of British Columbia, Vancouver, BC, Canada
| | - Jing Liang
- Department of Physics and Astronomy, The University of British Columbia, Vancouver, BC, Canada
- Quantum Matter Institute, The University of British Columbia, Vancouver, BC, Canada
| | - Jingda Wu
- Department of Physics and Astronomy, The University of British Columbia, Vancouver, BC, Canada
- Quantum Matter Institute, The University of British Columbia, Vancouver, BC, Canada
| | - Yunhuan Xiao
- Department of Physics and Astronomy, The University of British Columbia, Vancouver, BC, Canada
- Quantum Matter Institute, The University of British Columbia, Vancouver, BC, Canada
| | - Jerry I Dadap
- Department of Physics and Astronomy, The University of British Columbia, Vancouver, BC, Canada
- Quantum Matter Institute, The University of British Columbia, Vancouver, BC, Canada
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Ziliang Ye
- Department of Physics and Astronomy, The University of British Columbia, Vancouver, BC, Canada.
- Quantum Matter Institute, The University of British Columbia, Vancouver, BC, Canada.
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18
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Liu M, Wan TL, Dou K, Zhang L, Sun W, Jiang J, Ma Y, Gu Y, Kou L. Magnetic skyrmions and their manipulations in a 2D multiferroic CuCrP 2Te 6 monolayer. Phys Chem Chem Phys 2024; 26:6189-6195. [PMID: 38305045 DOI: 10.1039/d3cp05096c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/03/2024]
Abstract
Magnetic skyrmions and their effective manipulations are promising for the design of next-generation information storage and processing devices, due to their topologically protected chiral spin textures and low energy cost. They, therefore, have attracted significant interest from the communities of condensed matter physics and materials science. Herein, based on density functional theory (DFT) calculations and micromagnetic simulations, we report the spontaneous 2 nm-diameter magnetic skyrmions in the monolayer CuCrP2Te6 originating from the synergistic effect of broken inversion symmetry and strong Dzyaloshinskii-Moriya interactions (DMIs). The creation and annihilation of magnetic skyrmions can be achieved via the ferroelectric to anti-ferroelectric (FE-to-AFE) transition, due to the variation of the magnetic parameter D2/|KJ|. Moreover, we also found that the DMIs and Heisenberg isotropic exchange can be manipulated by bi-axial strain, to effectively enhance skyrmion stability. Our findings provide feasible approaches to manipulate the skyrmions, which can be used for the design of next-generation information storage devices.
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Affiliation(s)
- Minghao Liu
- School of Mechanical, Medical and Process Engineering, Queensland University of Technology, Brisbane, QLD 4001, Australia.
| | - Tsz Lok Wan
- School of Mechanical, Medical and Process Engineering, Queensland University of Technology, Brisbane, QLD 4001, Australia.
| | - Kaiying Dou
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Shandanan Str. 27, Jinan 250100, P. R. China
| | - Lei Zhang
- School of Chemistry and Physics, Queensland University of Technology, Brisbane, QLD 4001, Australia
| | - Wei Sun
- Shandong Provincial Key Laboratory of Preparation and Measurement of Building Materials, University of Jinan, Jinan 250022, China
| | - Jiawei Jiang
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin 300354, China
| | - Yandong Ma
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Shandanan Str. 27, Jinan 250100, P. R. China
| | - Yuantong Gu
- School of Mechanical, Medical and Process Engineering, Queensland University of Technology, Brisbane, QLD 4001, Australia.
| | - Liangzhi Kou
- School of Mechanical, Medical and Process Engineering, Queensland University of Technology, Brisbane, QLD 4001, Australia.
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19
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Zhao Z, Kang J, Tunga A, Ryu H, Shukla A, Rakheja S, Zhu W. Content-Addressable Memories and Transformable Logic Circuits Based on Ferroelectric Reconfigurable Transistors for In-Memory Computing. ACS NANO 2024; 18:2763-2771. [PMID: 38232763 DOI: 10.1021/acsnano.3c03900] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/19/2024]
Abstract
As a promising alternative to the von Neumann architecture, in-memory computing holds the promise of delivering a high computing capacity while consuming low power. In this paper, we show that the ferroelectric reconfigurable transistor can serve as a versatile logic-in-memory unit that can perform logic operations and data storage concurrently. When functioning as memory, a ferroelectric reconfigurable transistor can implement content-addressable memory (CAM) with a 1-transistor-per-bit density. With the switchable polarity of the ferroelectric reconfigurable transistor, XOR/XNOR-like matching operation in CAM is realized in a single transistor, which can offer a significant improvement in area and energy efficiency compared to conventional CAMs. NAND- and NOR-arrays of CAMs are also demonstrated, which enable multibit matching in a single reading operation. In addition, the NOR array of CAM cells effectively measures the Hamming distance between the input query and the stored entries. When functioning as a logic element, a ferroelectric reconfigurable transistor can be switched between n- and p-type modes. Utilizing the switchable polarity of these ferroelectric Schottky barrier transistors, we demonstrate reconfigurable logic gates with NAND/NOR dual functions, whose input-output mapping can be transformed in real time without changing the layout, and the configuration is nonvolatile.
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Affiliation(s)
- Zijing Zhao
- Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Junzhe Kang
- Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Ashwin Tunga
- Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Hojoon Ryu
- Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Ankit Shukla
- Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Shaloo Rakheja
- Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Wenjuan Zhu
- Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
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20
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Liu Q, Cui S, Bian R, Pan E, Cao G, Li W, Liu F. The Integration of Two-Dimensional Materials and Ferroelectrics for Device Applications. ACS NANO 2024; 18:1778-1819. [PMID: 38179983 DOI: 10.1021/acsnano.3c05711] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/06/2024]
Abstract
In recent years, there has been growing interest in functional devices based on two-dimensional (2D) materials, which possess exotic physical properties. With an ultrathin thickness, the optoelectrical and electrical properties of 2D materials can be effectively tuned by an external field, which has stimulated considerable scientific activities. Ferroelectric fields with a nonvolatile and electrically switchable feature have exhibited enormous potential in controlling the electronic and optoelectronic properties of 2D materials, leading to an extremely fertile area of research. Here, we review the 2D materials and relevant devices integrated with ferroelectricity. This review starts to introduce the background about the concerned themes, namely 2D materials and ferroelectrics, and then presents the fundamental mechanisms, tuning strategies, as well as recent progress of the ferroelectric effect on the optical and electrical properties of 2D materials. Subsequently, the latest developments of 2D material-based electronic and optoelectronic devices integrated with ferroelectricity are summarized. Finally, the future outlook and challenges of this exciting field are suggested.
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Affiliation(s)
- Qing Liu
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Silin Cui
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Renji Bian
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Er Pan
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Guiming Cao
- School of Information Science and Technology, Xi Chang University, 615013 Xi'an, China
| | - Wenwu Li
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Department of Materials Science, Fudan University, Shanghai 200433, China
| | - Fucai Liu
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
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21
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Wang P, Li J, Xue W, Ci W, Jiang F, Shi L, Zhou F, Zhou P, Xu X. Integrated In-Memory Sensor and Computing of Artificial Vision Based on Full-vdW Optoelectronic Ferroelectric Field-Effect Transistor. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2305679. [PMID: 38029338 PMCID: PMC10797471 DOI: 10.1002/advs.202305679] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/14/2023] [Revised: 11/01/2023] [Indexed: 12/01/2023]
Abstract
The development and application of artificial intelligence have led to the exploitation of low-power and compact intelligent information-processing systems integrated with sensing, memory, and neuromorphic computing functions. The 2D van der Waals (vdW) materials with abundant reservoirs for arbitrary stacking based on functions and enabling continued device downscaling offer an attractive alternative for continuously promoting artificial intelligence. In this study, full 2D SnS2 /h-BN/CuInP2 S6 (CIPS)-based ferroelectric field-effect transistors (Fe-FETs) and utilized light-induced ferroelectric polarization reversal to achieve excellent memory properties and multi-functional sensing-memory-computing vision simulations are designed. The device exhibits a high on/off current ratio of over 105 , long retention time (>104 s), stable cyclic endurance (>350 cycles), and 128 multilevel current states (7-bit). In addition, fundamental synaptic plasticity characteristics are emulated including paired-pulse facilitation (PPF), short-term plasticity (STP), long-term plasticity (LTP), long-term potentiation, and long-term depression. A ferroelectric optoelectronic reservoir computing system for the Modified National Institute of Standards and Technology (MNIST) handwritten digital recognition achieved a high accuracy of 93.62%. Furthermore, retina-like light adaptation and Pavlovian conditioning are successfully mimicked. These results provide a strategy for developing a multilevel memory and novel neuromorphic vision systems with integrated sensing-memory-processing.
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Affiliation(s)
- Peng Wang
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education & School of Chemistry and Materials ScienceShanxi Normal UniversityTaiyuan030031China
| | - Jie Li
- School of MicroelectronicsSouthern University of Science and TechnologyShenzhen518000China
| | - Wuhong Xue
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education & School of Chemistry and Materials ScienceShanxi Normal UniversityTaiyuan030031China
| | - Wenjuan Ci
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education & School of Chemistry and Materials ScienceShanxi Normal UniversityTaiyuan030031China
| | - Fengxian Jiang
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education & School of Chemistry and Materials ScienceShanxi Normal UniversityTaiyuan030031China
| | - Lei Shi
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education & School of Chemistry and Materials ScienceShanxi Normal UniversityTaiyuan030031China
| | - Feichi Zhou
- School of MicroelectronicsSouthern University of Science and TechnologyShenzhen518000China
| | - Peng Zhou
- ASIC & System State Key Lab School of MicroelectronicsFudan UniversityShanghai200433China
| | - Xiaohong Xu
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education & School of Chemistry and Materials ScienceShanxi Normal UniversityTaiyuan030031China
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22
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Zha J, Xia Y, Shi S, Huang H, Li S, Qian C, Wang H, Yang P, Zhang Z, Meng Y, Wang W, Yang Z, Yu H, Ho JC, Wang Z, Tan C. A 2D Heterostructure-Based Multifunctional Floating Gate Memory Device for Multimodal Reservoir Computing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2308502. [PMID: 37862005 DOI: 10.1002/adma.202308502] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/21/2023] [Indexed: 10/21/2023]
Abstract
The demand for economical and efficient data processing has led to a surge of interest in neuromorphic computing based on emerging two-dimensional (2D) materials in recent years. As a rising van der Waals (vdW) p-type Weyl semiconductor with many intriguing properties, tellurium (Te) has been widely used in advanced electronics/optoelectronics. However, its application in floating gate (FG) memory devices for information processing has never been explored. Herein, an electronic/optoelectronic FG memory device enabled by Te-based 2D vdW heterostructure for multimodal reservoir computing (RC) is reported. When subjected to intense electrical/optical stimuli, the device exhibits impressive nonvolatile electronic memory behaviors including ≈108 extinction ratio, ≈100 ns switching speed, >4000 cycles, >4000-s retention stability, and nonvolatile multibit optoelectronic programmable characteristics. When the input stimuli weaken, the nonvolatile memory degrades into volatile memory. Leveraging these rich nonlinear dynamics, a multimodal RC system with high recognition accuracy of 90.77% for event-type multimodal handwritten digit-recognition is demonstrated.
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Affiliation(s)
- Jiajia Zha
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Yunpeng Xia
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Shuhui Shi
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong SAR, 999077, China
- School of Microelectronics, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, China
| | - Haoxin Huang
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Siyuan Li
- Department of Chemistry, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Chen Qian
- Department of Chemistry, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Huide Wang
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Peng Yang
- College of Integrated Circuits and Optoelectronic Chips, Shenzhen Technology University, Shenzhen, Guangdong, 518118, China
| | - Zhuomin Zhang
- Department of Mechanical Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - You Meng
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Wei Wang
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Zhengbao Yang
- Department of Mechanical Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
- Department of Mechanical and Aerospace Engineering, Hong Kong University of Science and Technology, Hong Kong SAR, 999077, China
| | - Hongyu Yu
- School of Microelectronics, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, China
| | - Johnny C Ho
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Zhongrui Wang
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong SAR, 999077, China
| | - Chaoliang Tan
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong SAR, 999077, China
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23
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Ju L, Ma Y, Tan X, Kou L. Controllable Electrocatalytic to Photocatalytic Conversion in Ferroelectric Heterostructures. J Am Chem Soc 2023; 145:26393-26402. [PMID: 38010364 DOI: 10.1021/jacs.3c10271] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2023]
Abstract
Photocatalytic and electrocatalytic reactions to produce value-added chemicals offer promising solutions for addressing the energy crisis and environmental pollution. Photocatalysis is driven by light excitation and charge separation and relies on semiconducting catalysts, while electrocatalysis is driven by external electric current and is mostly based on metallic catalysts with high electrical conductivity. Due to the distinct reaction mechanism, the conversion between the two catalytic types has remained largely unexplored. Herein, by means of density functional theory (DFT) simulations, we demonstrated that the ferroelectric heterostructures Mo-BN@In2Se3 and WSe2@In2Se3 can exhibit semiconducting or metallic features depending on the polarization direction as a result of the built-in field and electron transfer. Using the nitrogen reduction reaction (NRR) and hydrogen evolution reaction (HER) as examples, the metallic heterostructures act as excellent electrocatalysts for these reactions, while the semiconducting heterostructures serve as the corresponding photocatalysts with improved optical absorption, enhanced charge separation, and low Gibbs free energy change. The findings not only bridge physical phenomena of the electronic phase transition with chemical reactions but also offer a new and feasible approach to significantly improve the catalytic efficiency.
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Affiliation(s)
- Lin Ju
- School of Physics and Electric Engineering, Anyang Normal University, Anyang 455000, China
| | - Yandong Ma
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Xin Tan
- Institute for Carbon Neutralization, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035, Zhejiang, China
| | - Liangzhi Kou
- School of Mechanical, Medical and Process Engineering Faculty, Queensland University of Technology, Brisbane, QLD 4001, Australia
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24
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Ma Y, Yan Y, Luo L, Pazos S, Zhang C, Lv X, Chen M, Liu C, Wang Y, Chen A, Li Y, Zheng D, Lin R, Algaidi H, Sun M, Liu JZ, Tu S, Alshareef HN, Gong C, Lanza M, Xue F, Zhang X. High-performance van der Waals antiferroelectric CuCrP 2S 6-based memristors. Nat Commun 2023; 14:7891. [PMID: 38036500 PMCID: PMC10689492 DOI: 10.1038/s41467-023-43628-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/08/2023] [Accepted: 11/15/2023] [Indexed: 12/02/2023] Open
Abstract
Layered thio- and seleno-phosphate ferroelectrics, such as CuInP2S6, are promising building blocks for next-generation nonvolatile memory devices. However, because of the low Curie point, the CuInP2S6-based memory devices suffer from poor thermal stability (<42 °C). Here, exploiting the electric field-driven phase transition in the rarely studied antiferroelectric CuCrP2S6 crystals, we develop a nonvolatile memristor showing a sizable resistive-switching ratio of ~ 1000, high switching endurance up to 20,000 cycles, low cycle-to-cycle variation, and robust thermal stability up to 120 °C. The resistive switching is attributed to the ferroelectric polarization-modulated thermal emission accompanied by the Fowler-Nordheim tunneling across the interfaces. First-principles calculations reveal that the good device performances are associated with the exceptionally strong ferroelectric polarization in CuCrP2S6 crystal. Furthermore, the typical biological synaptic learning rules, such as long-term potentiation/depression and spike amplitude/spike time-dependent plasticity, are also demonstrated. The results highlight the great application potential of van der Waals antiferroelectrics in high-performance synaptic devices for neuromorphic computing.
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Affiliation(s)
- Yinchang Ma
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Yuan Yan
- Department of Mechanical Engineering, The University of Melbourne, Parkville, Vic, 3010, Australia
| | - Linqu Luo
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Sebastian Pazos
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Chenhui Zhang
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Xiang Lv
- College of Materials Science and Engineering, Sichuan University, Chengdu, 610065, China
| | - Maolin Chen
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Chen Liu
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Yizhou Wang
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Aitian Chen
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Yan Li
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Dongxing Zheng
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Rongyu Lin
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Hanin Algaidi
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Minglei Sun
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Jefferson Zhe Liu
- Department of Mechanical Engineering, The University of Melbourne, Parkville, Vic, 3010, Australia
| | - Shaobo Tu
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Husam N Alshareef
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Cheng Gong
- Department of Electrical and Computer Engineering and Quantum Technology Center, University of Maryland, College Park, MD, 20742, USA
| | - Mario Lanza
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Fei Xue
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, School of Micro-Nano Electronics, Zhejiang University, Hangzhou, 311215, China.
| | - Xixiang Zhang
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia.
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25
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Chen J, Zhu YQ, Zhao XC, Wang ZH, Zhang K, Zhang Z, Sun MY, Wang S, Zhang Y, Han L, Wu X, Ren TL. PZT-Enabled MoS 2 Floating Gate Transistors: Overcoming Boltzmann Tyranny and Achieving Ultralow Energy Consumption for High-Accuracy Neuromorphic Computing. NANO LETTERS 2023; 23:10196-10204. [PMID: 37926956 DOI: 10.1021/acs.nanolett.3c02721] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2023]
Abstract
Low-power electronic devices play a pivotal role in the burgeoning artificial intelligence era. The study of such devices encompasses low-subthreshold swing (SS) transistors and neuromorphic devices. However, conventional field-effect transistors (FETs) face the inherent limitation of the "Boltzmann tyranny", which restricts SS to 60 mV decade-1 at room temperature. Additionally, FET-based neuromorphic devices lack sufficient conductance states for highly accurate neuromorphic computing due to a narrow memory window. In this study, we propose a pioneering PZT-enabled MoS2 floating gate transistor (PFGT) configuration, demonstrating a low SS of 46 mV decade-1 and a wide memory window of 7.2 V in the dual-sweeping gate voltage range from -7 to 7 V. The wide memory window provides 112 distinct conductance states for PFGT. Moreover, the PFGT-based artificial neural network achieves an outstanding facial-recognition accuracy of 97.3%. This study lays the groundwork for the development of low-SS transistors and highly energy efficient artificial synapses utilizing two-dimensional materials.
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Affiliation(s)
- Jing Chen
- Institute of Marine Science and Technology, Shandong University, Qingdao, Shandong 266237, China
- BNRist, Tsinghua University, Beijing 100084, China
| | - Ye-Qing Zhu
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Xue-Chun Zhao
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Zheng-Hua Wang
- Institute of Marine Science and Technology, Shandong University, Qingdao, Shandong 266237, China
| | - Kai Zhang
- Institute of Marine Science and Technology, Shandong University, Qingdao, Shandong 266237, China
| | - Zheng Zhang
- Institute of Marine Science and Technology, Shandong University, Qingdao, Shandong 266237, China
| | - Ming-Yuan Sun
- Institute of Marine Science and Technology, Shandong University, Qingdao, Shandong 266237, China
| | - Shuai Wang
- Institute of Marine Science and Technology, Shandong University, Qingdao, Shandong 266237, China
| | - Yu Zhang
- Institute of Marine Science and Technology, Shandong University, Qingdao, Shandong 266237, China
- Shenzhen Research Institute of Shandong University, Shenzhen 518057, China
| | - Lin Han
- Institute of Marine Science and Technology, Shandong University, Qingdao, Shandong 266237, China
- State Key Laboratory of Crystal Materials, Shandong University, Jinan, Shandong 250100, China
- Shenzhen Research Institute of Shandong University, Shenzhen 518057, China
- Shandong Engineering Research Center of Biomarker and Artificial Intelligence Application, Jinan 250100, P. R. China
| | - Xiaoming Wu
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Tian-Ling Ren
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
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26
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Ram A, Maity K, Marchand C, Mahmoudi A, Kshirsagar AR, Soliman M, Taniguchi T, Watanabe K, Doudin B, Ouerghi A, Reichardt S, O'Connor I, Dayen JF. Reconfigurable Multifunctional van der Waals Ferroelectric Devices and Logic Circuits. ACS NANO 2023; 17:21865-21877. [PMID: 37864568 DOI: 10.1021/acsnano.3c07952] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/23/2023]
Abstract
Emerging reconfigurable devices are fast gaining popularity in the search for next-generation computing hardware, while ferroelectric engineering of the doping state in semiconductor materials has the potential to offer alternatives to traditional von-Neumann architecture. In this work, we combine these concepts and demonstrate the suitability of reconfigurable ferroelectric field-effect transistors (Re-FeFETs) for designing nonvolatile reconfigurable logic-in-memory circuits with multifunctional capabilities. Modulation of the energy landscape within a homojunction of a 2D tungsten diselenide (WSe2) layer is achieved by independently controlling two split-gate electrodes made of a ferroelectric 2D copper indium thiophosphate (CuInP2S6) layer. Controlling the state encoded in the program gate enables switching between p, n, and ambipolar FeFET operating modes. The transistors exhibit on-off ratios exceeding 106 and hysteresis windows of up to 10 V width. The homojunction can change from Ohmic-like to diode behavior with a large rectification ratio of 104. When programmed in the diode mode, the large built-in p-n junction electric field enables efficient separation of photogenerated carriers, making the device attractive for energy-harvesting applications. The implementation of the Re-FeFET for reconfigurable logic functions shows how a circuit can be reconfigured to emulate either polymorphic ferroelectric NAND/AND logic-in-memory or electronic XNOR logic with a long retention time exceeding 104 s. We also illustrate how a circuit design made of just two Re-FeFETs exhibits high logic expressivity with reconfigurability at runtime to implement several key nonvolatile 2-input logic functions. Moreover, the Re-FeFET circuit demonstrates high compactness, with an up to 80% reduction in transistor count compared to standard CMOS design. The 2D van de Waals Re-FeFET devices therefore exhibit promising potential for both More-than-Moore and beyond-Moore future of electronics, in particular for an energy-efficient implementation of in-memory computing and machine learning hardware, due to their multifunctionality and design compactness.
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Affiliation(s)
- Ankita Ram
- Université de Strasbourg, IPCMS-CNRS UMR 7504, 23 Rue du Loess, 67034 Strasbourg, France
| | - Krishna Maity
- Université de Strasbourg, IPCMS-CNRS UMR 7504, 23 Rue du Loess, 67034 Strasbourg, France
| | - Cédric Marchand
- École Centrale de Lyon, 36 Avenue Guy de Collongue, Ecully 69134, France
| | - Aymen Mahmoudi
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120 Palaiseau, France
| | - Aseem Rajan Kshirsagar
- Department of Physics and Materials Science, University of Luxembourg, Luxembourg 1511, Luxembourg
| | - Mohamed Soliman
- Université de Strasbourg, IPCMS-CNRS UMR 7504, 23 Rue du Loess, 67034 Strasbourg, France
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Bernard Doudin
- Université de Strasbourg, IPCMS-CNRS UMR 7504, 23 Rue du Loess, 67034 Strasbourg, France
- Institut Universitaire de France, 1 rue Descartes, 75231 Paris cedex 05, France
| | - Abdelkarim Ouerghi
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120 Palaiseau, France
| | - Sven Reichardt
- Department of Physics and Materials Science, University of Luxembourg, Luxembourg 1511, Luxembourg
| | - Ian O'Connor
- École Centrale de Lyon, 36 Avenue Guy de Collongue, Ecully 69134, France
| | - Jean-Francois Dayen
- Université de Strasbourg, IPCMS-CNRS UMR 7504, 23 Rue du Loess, 67034 Strasbourg, France
- Institut Universitaire de France, 1 rue Descartes, 75231 Paris cedex 05, France
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27
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Wang Z, Pan H, Zhou B. Nonvolatile magnetoelectric coupling in two-dimensional van der Waals sandwich heterostructure CuInP 2S 6/MnCl 3/CuInP 2S 6. Phys Chem Chem Phys 2023; 25:29098-29107. [PMID: 37862024 DOI: 10.1039/d3cp03798c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/21/2023]
Abstract
Electrical control of magnetism is of great interest for low-energy-consumption spintronic applications. Due to the recent experimental breakthrough in two-dimensional materials, with the absence of hanging bonds on the surface and strong tolerance for lattice mismatch, heterogeneous integration of different two-dimensional materials provides a new opportunity for coupling between different physical properties. Here, we report the realization of nonvolatile magnetoelectric coupling in vdW sandwich heterostructure CuInP2S6/MnCl3/CuInP2S6. Using first-principles calculations, we reveal that when interfacing with ferroelectric CuInP2S6, the Dirac half-metallic state of monolayer MnCl3 will be destroyed. Moreover, depending on the electrically polarized direction of CuInP2S6, MnCl3 can be a half-metal or a ferromagnetic semiconductor. We unveil that the obtained ferromagnetic semiconductor in MnCl3 can be attributed to the different gain and loss of electrons on the two adjacent Mn atoms due to the sublattice symmetry broken by interlayer coupling. The effects of interfacial magnetoelectric coupling on magnetic anisotropy and ferromagnetic Curie temperature of MnCl3 are also investigated, and a multiferroic memory based on this model is designed. Our work not only provides a promising way to design nonvolatile electrical control of magnetism but also renders monolayer MnCl3 an appealing platform for developing low-dimensional memory devices.
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Affiliation(s)
- Zichun Wang
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.
| | - Honggang Pan
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.
| | - Baozeng Zhou
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.
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28
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Niu Y, Li L, Qi Z, Aung HH, Han X, Tenne R, Yao Y, Zak A, Guo Y. 0D van der Waals interfacial ferroelectricity. Nat Commun 2023; 14:5578. [PMID: 37907466 PMCID: PMC10618478 DOI: 10.1038/s41467-023-41045-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/26/2023] [Accepted: 08/21/2023] [Indexed: 11/02/2023] Open
Abstract
The dimensional limit of ferroelectricity has been long explored. The critical contravention is that the downscaling of ferroelectricity leads to a loss of polarization. This work demonstrates a zero-dimensional ferroelectricity by the atomic sliding at the restrained van der Waals interface of crossed tungsten disufilde nanotubes. The developed zero-dimensional ferroelectric diode in this work presents not only non-volatile resistive memory, but also the programmable photovoltaic effect at the visible band. Benefiting from the intrinsic dimensional limitation, the zero-dimensional ferroelectric diode allows electrical operation at an ultra-low current. By breaking through the critical size of depolarization, this work demonstrates the ultimately downscaled interfacial ferroelectricity of zero-dimensional, and contributes to a branch of devices that integrates zero-dimensional ferroelectric memory, nano electro-mechanical system, and programmable photovoltaics in one.
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Affiliation(s)
- Yue Niu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China
| | - Lei Li
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China
| | - Zhiying Qi
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China
| | - Hein Htet Aung
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China
| | - Xinyi Han
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China
| | - Reshef Tenne
- Department of Molecular Chemistry and Materials Science, Weizmann Institute of Science, 7610001, Rehovot, Israel
| | - Yugui Yao
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China
| | - Alla Zak
- Faculty of Sciences, Holon Institute of Technology, 52 Golomb Street, 5810201, Holon, Israel
| | - Yao Guo
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China.
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China.
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29
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Park S, Lee D, Kang J, Choi H, Park JH. Laterally gated ferroelectric field effect transistor (LG-FeFET) using α-In 2Se 3 for stacked in-memory computing array. Nat Commun 2023; 14:6778. [PMID: 37880220 PMCID: PMC10600126 DOI: 10.1038/s41467-023-41991-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/29/2023] [Accepted: 09/26/2023] [Indexed: 10/27/2023] Open
Abstract
In-memory computing is an attractive alternative for handling data-intensive tasks as it employs parallel processing without the need for data transfer. Nevertheless, it necessitates a high-density memory array to effectively manage large data volumes. Here, we present a stacked ferroelectric memory array comprised of laterally gated ferroelectric field-effect transistors (LG-FeFETs). The interlocking effect of the α-In2Se3 is utilized to regulate the channel conductance. Our study examined the distinctive characteristics of the LG-FeFET, such as a notably wide memory window, effective ferroelectric switching, long retention time (over 3 × 104 seconds), and high endurance (over 105 cycles). This device is also well-suited for implementing vertically stacked structures because decreasing its height can help mitigate the challenges associated with the integration process. We devised a 3D stacked structure using the LG-FeFET and verified its feasibility by performing multiply-accumulate (MAC) operations in a two-tier stacked memory configuration.
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Affiliation(s)
- Sangyong Park
- Flash Technology Development Team, R&D Center, Device Solutions, Samsung Electronics Co. Ltd, Hwasung, 18448, Korea
- Department of Semiconductor and Display Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Korea
| | - Dongyoung Lee
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Korea
| | - Juncheol Kang
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Korea
| | - Hojin Choi
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Korea
| | - Jin-Hong Park
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Korea.
- SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, Korea.
- Department of Semiconductor Convergence Engineering, Sungkyunkwan University (SKKU), Suwon, Korea.
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30
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Man P, Huang L, Zhao J, Ly TH. Ferroic Phases in Two-Dimensional Materials. Chem Rev 2023; 123:10990-11046. [PMID: 37672768 DOI: 10.1021/acs.chemrev.3c00170] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/08/2023]
Abstract
Two-dimensional (2D) ferroics, namely ferroelectric, ferromagnetic, and ferroelastic materials, are attracting rising interest due to their fascinating physical properties and promising functional applications. A variety of 2D ferroic phases, as well as 2D multiferroics and the novel 2D ferrovalleytronics/ferrotoroidics, have been recently predicted by theory, even down to the single atomic layers. Meanwhile, some of them have already been experimentally verified. In addition to the intrinsic 2D ferroics, appropriate stacking, doping, and defects can also artificially regulate the ferroic phases of 2D materials. Correspondingly, ferroic ordering in 2D materials exhibits enormous potential for future high density memory devices, energy conversion devices, and sensing devices, among other applications. In this paper, the recent research progresses on 2D ferroic phases are comprehensively reviewed, with emphasis on chemistry and structural origin of the ferroic properties. In addition, the promising applications of the 2D ferroics for information storage, optoelectronics, and sensing are also briefly discussed. Finally, we envisioned a few possible pathways for the future 2D ferroics research and development. This comprehensive overview on the 2D ferroic phases can provide an atlas for this field and facilitate further exploration of the intriguing new materials and physical phenomena, which will generate tremendous impact on future functional materials and devices.
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Affiliation(s)
- Ping Man
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong 999077, P. R. China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen 518057, P. R. China
| | - Lingli Huang
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong 999077, P. R. China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen 518057, P. R. China
| | - Jiong Zhao
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong 999077, P. R. China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518057, P. R. China
| | - Thuc Hue Ly
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong 999077, P. R. China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen 518057, P. R. China
- Department of Chemistry and State Key Laboratory of Marine Pollution, City University of Hong Kong, Kowloon, Hong Kong 999077, P. R. China
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31
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Park M, Yang JY, Yeom MJ, Bae B, Baek Y, Yoo G, Lee K. An artificial neuromuscular junction for enhanced reflexes and oculomotor dynamics based on a ferroelectric CuInP 2S 6/GaN HEMT. SCIENCE ADVANCES 2023; 9:eadh9889. [PMID: 37738348 PMCID: PMC10516496 DOI: 10.1126/sciadv.adh9889] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/29/2023] [Accepted: 08/22/2023] [Indexed: 09/24/2023]
Abstract
A neuromuscular junction (NMJ) is a particularized synapse that activates muscle fibers for macro-motions, requiring more energy than computation. Emulating the NMJ is thus challenging owing to the need for both synaptic plasticity and high driving power to trigger motions. Here, we present an artificial NMJ using CuInP2S6 (CIPS) as a gate dielectric integrated with an AlGaN/GaN-based high-electron mobility transistor (HEMT). The ferroelectricity of the CIPS is coupled with the two-dimensional electron gas channel in the HEMT, providing a wide programmable current range of 6 picoampere per millimeter to 5 milliampere per millimeter. The large output current window of the CIPS/GaN ferroelectric HEMT (FeHEMT) allows for amplifier-less actuation, emulating the biological NMJ functions of actuation and synaptic plasticity. We also demonstrate the emulation of biological oculomotor dynamics, including in situ object tracking and enhanced stimulus responses, using the fabricated artificial NMJ. We believe that the CIPS/GaN FeHEMT offers a promising pathway for bioinspired robotics and neuromorphic vision.
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Affiliation(s)
- Minseong Park
- Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA 22904, USA
| | - Jeong Yong Yang
- School of Electronic Engineering, Soongsil University, Seoul 06938, South Korea
| | - Min Jae Yeom
- School of Electronic Engineering, Soongsil University, Seoul 06938, South Korea
| | - Byungjoon Bae
- Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA 22904, USA
| | - Yongmin Baek
- Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA 22904, USA
| | - Geonwook Yoo
- School of Electronic Engineering, Soongsil University, Seoul 06938, South Korea
- Department of Intelligent Semiconductors, Soongsil University, Seoul 06978, South Korea
| | - Kyusang Lee
- Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA 22904, USA
- Department of Material Science and Engineering, University of Virginia, Charlottesville, VA 22904, USA
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32
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Mikolajick T, Park MH, Begon-Lours L, Slesazeck S. From Ferroelectric Material Optimization to Neuromorphic Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2206042. [PMID: 36017895 DOI: 10.1002/adma.202206042] [Citation(s) in RCA: 21] [Impact Index Per Article: 21.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/03/2022] [Revised: 08/11/2022] [Indexed: 06/15/2023]
Abstract
Due to the voltage driven switching at low voltages combined with nonvolatility of the achieved polarization state, ferroelectric materials have a unique potential for low power nonvolatile electronic devices. The competitivity of such devices is hindered by compatibility issues of well-known ferroelectrics with established semiconductor technology. The discovery of ferroelectricity in hafnium oxide changed this situation. The natural application of nonvolatile devices is as a memory cell. Nonvolatile memory devices also built the basis for other applications like in-memory or neuromorphic computing. Three different basic ferroelectric devices can be constructed: ferroelectric capacitors, ferroelectric field effect transistors and ferroelectric tunneling junctions. In this article first the material science of the ferroelectricity in hafnium oxide will be summarized with a special focus on tailoring the switching characteristics towards different applications.The current status of nonvolatile ferroelectric memories then lays the ground for looking into applications like in-memory computing. Finally, a special focus will be given to showcase how the basic building blocks of spiking neural networks, the neuron and the synapse, can be realized and how they can be combined to realize neuromorphic computing systems. A summary, comparison with other technologies like resistive switching devices and an outlook completes the paper.
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Affiliation(s)
- Thomas Mikolajick
- NaMLab gGmbH, Noethnitzer Strasse 64 a, 01187, Dresden, Germany
- Institute of Semiconductors and Microsystems, TU Dresden, 01069, Dresden, Germany
| | - Min Hyuk Park
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul, 08826, Republic of Korea
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33
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Wang H, Wen Y, Zeng H, Xiong Z, Tu Y, Zhu H, Cheng R, Yin L, Jiang J, Zhai B, Liu C, Shan C, He J. 2D Ferroic Materials for Nonvolatile Memory Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2305044. [PMID: 37486859 DOI: 10.1002/adma.202305044] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/28/2023] [Revised: 07/21/2023] [Indexed: 07/26/2023]
Abstract
The emerging nonvolatile memory technologies based on ferroic materials are promising for producing high-speed, low-power, and high-density memory in the field of integrated circuits. Long-range ferroic orders observed in 2D materials have triggered extensive research interest in 2D magnets, 2D ferroelectrics, 2D multiferroics, and their device applications. Devices based on 2D ferroic materials and heterostructures with an atomically smooth interface and ultrathin thickness have exhibited impressive properties and significant potential for developing advanced nonvolatile memory. In this context, a systematic review of emergent 2D ferroic materials is conducted here, emphasizing their recent research on nonvolatile memory applications, with a view to proposing brighter prospects for 2D magnetic materials, 2D ferroelectric materials, 2D multiferroic materials, and their relevant devices.
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Affiliation(s)
- Hao Wang
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Hui Zeng
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Ziren Xiong
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Yangyuan Tu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Hao Zhu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Lei Yin
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Jian Jiang
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Baoxing Zhai
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Chuansheng Liu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Chongxin Shan
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou, 450052, China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
- Hubei Luojia Laboratory, Wuhan, 430079, China
- Wuhan Institute of Quantum Technology, Wuhan, 430206, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, China
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34
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Zhong Z, Wu S, Li X, Wang Z, Yang Q, Huang B, Chen Y, Wang X, Lin T, Shen H, Meng X, Wang M, Shi W, Wang J, Chu J, Huang H. Robust Threshold-Switching Behavior Assisted by Cu Migration in a Ferroionic CuInP 2S 6 Heterostructure. ACS NANO 2023. [PMID: 37186552 DOI: 10.1021/acsnano.3c02406] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/17/2023]
Abstract
The two-dimensional layered material CuInP2S6 (CIPS) has attracted significant research attention due to its nontrivial physical properties, including room-temperature ferroelectricity at the ultrathin limit and substantial ionic conductivity. Despite many efforts to control its ionic conductance and develop electronic devices, such as memristors, improving the stability of these devices remains a challenge. This work presents a highly stable threshold-switching device based on the Cu/CIPS/graphene heterostructure, achieved after a comprehensive investigation of the activation of Cu's ionic conductivity. The device exhibits exceptional threshold-switching performance, including good cycling endurance, a high on/off ratio of up to 104, low operation voltages, and an ultrasmall subthreshold swing of less than 1.8 mV/decade for the resistance-switching process. Through temperature-dependent electrical and Raman spectroscopy measurements, the stable resistive-switching mechanism is interpreted with a drifting and diffusion model of Cu ions under the electric field, rather than the conventional conducting filament mechanism. These results make the layered ferroionic CIPS material a promising candidate for information storage devices, demonstrating a compelling approach to achieving high-performance threshold-switching memristor devices.
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Affiliation(s)
- Zhipeng Zhong
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Material Science, Fudan University, Shanghai 200433, People's Republic of China
| | - Shuaiqin Wu
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Material Science, Fudan University, Shanghai 200433, People's Republic of China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China
| | - Xiang Li
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Material Science, Fudan University, Shanghai 200433, People's Republic of China
| | - Zhiqiang Wang
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Material Science, Fudan University, Shanghai 200433, People's Republic of China
| | - Qianyi Yang
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Material Science, Fudan University, Shanghai 200433, People's Republic of China
| | - Bangchi Huang
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Material Science, Fudan University, Shanghai 200433, People's Republic of China
| | - Yan Chen
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Material Science, Fudan University, Shanghai 200433, People's Republic of China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China
| | - Xudong Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China
| | - Tie Lin
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China
| | - Hong Shen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China
| | - Xiangjian Meng
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China
| | - Ming Wang
- Frontier Institute of Chip and System, Fudan University, Shanghai 200433, People's Republic of China
- State Key Laboratory of Integrated Chip and Systems, Fudan University, Shanghai 200433, People's Republic of China
| | - Wu Shi
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, People's Republic of China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, People's Republic of China
| | - Jianlu Wang
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Material Science, Fudan University, Shanghai 200433, People's Republic of China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China
- Frontier Institute of Chip and System, Fudan University, Shanghai 200433, People's Republic of China
- State Key Laboratory of Integrated Chip and Systems, Fudan University, Shanghai 200433, People's Republic of China
| | - Junhao Chu
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Material Science, Fudan University, Shanghai 200433, People's Republic of China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China
| | - Hai Huang
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Material Science, Fudan University, Shanghai 200433, People's Republic of China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China
- State Key Laboratory of Integrated Chip and Systems, Fudan University, Shanghai 200433, People's Republic of China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, People's Republic of China
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35
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Yao C, Wu G, Huang M, Wang W, Zhang C, Wu J, Liu H, Zheng B, Yi J, Zhu C, Tang Z, Wang Y, Huang M, Huang L, Li Z, Xiang L, Li D, Li S, Pan A. Reconfigurable Artificial Synapse Based on Ambipolar Floating Gate Memory. ACS APPLIED MATERIALS & INTERFACES 2023; 15:23573-23582. [PMID: 37141554 DOI: 10.1021/acsami.3c00063] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/06/2023]
Abstract
Artificial synapse networks capable of massively parallel computing and mimicking biological neural networks can potentially improve the processing efficiency of existing information technologies. Semiconductor devices functioning as excitatory and inhibitory synapses are crucial for developing intelligence systems, such as traffic control systems. However, achieving reconfigurability between two working modes (inhibitory and excitatory) and bilingual synaptic behavior in a single transistor remains challenging. This study successfully mimics a bilingual synaptic response using an artificial synapse based on an ambipolar floating gate memory comprising tungsten selenide (WSe2)/hexagonal boron nitride (h-BN)/ molybdenum telluride (MoTe2). In this WSe2/h-BN/MoTe2 structure, ambipolar semiconductors WSe2 and MoTe2 are inserted as channel and floating gates, respectively, and h-BN serves as the tunneling barrier layer. Using either positive or negative pulse amplitude modulations at the control gate, this device with bipolar channel conduction produced eight distinct resistance states. Based on this, we experimentally projected that we could achieve 490 memory states (210 hole-resistance states + 280 electron-resistance states). Using the bipolar charge transport and multistorage states of WSe2/h-BN/MoTe2 floating gate memory, we mimicked reconfigurable excitatory and inhibitory synaptic plasticity in a single device. Furthermore, the convolution neural network formed by these synaptic devices can recognize handwritten digits with an accuracy of >92%. This study identifies the unique properties of heterostructure devices based on two-dimensional materials as well as predicts their applicability in advanced recognition of neuromorphic computing.
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Affiliation(s)
- Chengdong Yao
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Guangcheng Wu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Mingqiang Huang
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| | - Wenqiang Wang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Cheng Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Jiaxin Wu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Huawei Liu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Biyuan Zheng
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Jiali Yi
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Chenguang Zhu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Zilan Tang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Yizhe Wang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Ming Huang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Luying Huang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Ziwei Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Li Xiang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Dong Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Shengman Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, China
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36
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Zha J, Shi S, Chaturvedi A, Huang H, Yang P, Yao Y, Li S, Xia Y, Zhang Z, Wang W, Wang H, Wang S, Yuan Z, Yang Z, He Q, Tai H, Teo EHT, Yu H, Ho JC, Wang Z, Zhang H, Tan C. Electronic/Optoelectronic Memory Device Enabled by Tellurium-based 2D van der Waals Heterostructure for in-Sensor Reservoir Computing at the Optical Communication Band. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2211598. [PMID: 36857506 DOI: 10.1002/adma.202211598] [Citation(s) in RCA: 20] [Impact Index Per Article: 20.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/12/2022] [Revised: 02/16/2023] [Indexed: 05/19/2023]
Abstract
Although 2D materials are widely explored for data storage and neuromorphic computing, the construction of 2D material-based memory devices with optoelectronic responsivity in the short-wave infrared (SWIR) region for in-sensor reservoir computing (RC) at the optical communication band still remains a big challenge. In this work, an electronic/optoelectronic memory device enabled by tellurium-based 2D van der Waals (vdW) heterostructure is reported, where the ferroelectric CuInP2 S6 and tellurium channel endow this device with both the long-term potentiation/depression by voltage pulses and short-term potentiation by 1550 nm laser pulses (a typical wavelength in the conventional fiber optical communication band). Leveraging the rich dynamics, a fully memristive in-sensor RC system that can simultaneously sense, decode, and learn messages transmitted by optical fibers is demonstrated. The reported 2D vdW heterostructure-based memory featuring both the long-term and short-term memory behaviors using electrical and optical pulses in SWIR region has not only complemented the wide spectrum of applications of 2D materials family in electronics/optoelectronics but also paves the way for future smart signal processing systems at the edge.
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Affiliation(s)
- Jiajia Zha
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Shuhui Shi
- Department of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong, 999077, P. R. China
- School of Microelectronics, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, P. R. China
| | - Apoorva Chaturvedi
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Ave, Singapore, 639798, Singapore
| | - Haoxin Huang
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Peng Yang
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Yao Yao
- Department of Chemistry, City University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Siyuan Li
- Department of Chemistry, City University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Yunpeng Xia
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Zhuomin Zhang
- Department of Mechanical Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Wei Wang
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Huide Wang
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Shaocong Wang
- Department of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Zhen Yuan
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, P. R. China
| | - Zhengbao Yang
- Department of Mechanical Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China
- Department of Mechanical and Aerospace Engineering, Hong Kong University of Science and Technology, Hong Kong, 999077, P. R. China
| | - Qiyuan He
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Huiling Tai
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, P. R. China
| | - Edwin Hang Tong Teo
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Ave, Singapore, 639798, Singapore
- School of Electrical and Electronics Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Hongyu Yu
- School of Microelectronics, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, P. R. China
| | - Johnny C Ho
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Zhongrui Wang
- Department of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Hua Zhang
- Department of Chemistry, City University of Hong Kong, Hong Kong, 999077, P. R. China
- Hong Kong Branch of National Precious Metals Material Engineering Research Center (NPMM), City University of Hong Kong, Hong Kong, P. R. China
- Shenzhen Research Institute, City University of Hong Kong, Shenzhen, 518057, P. R. China
| | - Chaoliang Tan
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China
- Department of Chemistry, City University of Hong Kong, Hong Kong, 999077, P. R. China
- Shenzhen Research Institute, City University of Hong Kong, Shenzhen, 518057, P. R. China
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37
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Yang JY, Park M, Yeom MJ, Baek Y, Yoon SC, Jeong YJ, Oh SY, Lee K, Yoo G. Reconfigurable Physical Reservoir in GaN/α-In 2Se 3 HEMTs Enabled by Out-of-Plane Local Polarization of Ferroelectric 2D Layer. ACS NANO 2023; 17:7695-7704. [PMID: 37014204 DOI: 10.1021/acsnano.3c00187] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Significant effort for demonstrating a gallium nitride (GaN)-based ferroelectric metal-oxide-semiconductor (MOS)-high-electron-mobility transistor (HEMT) for reconfigurable operation via simple pulse operation has been hindered by the lack of suitable materials, gate structures, and intrinsic depolarization effects. In this study, we have demonstrated artificial synapses using a GaN-based MOS-HEMT integrated with an α-In2Se3 ferroelectric semiconductor. The van der Waals heterostructure of GaN/α-In2Se3 provides a potential to achieve high-frequency operation driven by a ferroelectrically coupled two-dimensional electron gas (2DEG). Moreover, the semiconducting α-In2Se3 features a steep subthreshold slope with a high ON/OFF ratio (∼1010). The self-aligned α-In2Se3 layer with the gate electrode suppresses the in-plane polarization while promoting the out-of-plane (OOP) polarization of α-In2Se3, resulting in a steep subthreshold slope (10 mV/dec) and creating a large hysteresis (2 V). Furthermore, based on the short-term plasticity (STP) characteristics of the fabricated ferroelectric HEMT, we demonstrated reservoir computing (RC) for image classification. We believe that the ferroelectric GaN/α-In2Se3 HEMT can provide a viable pathway toward ultrafast neuromorphic computing.
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Affiliation(s)
- Jeong Yong Yang
- School of Electronic Engineering, Soongsil University, Seoul 06938, South Korea
| | - Minseong Park
- Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - Min Jae Yeom
- School of Electronic Engineering, Soongsil University, Seoul 06938, South Korea
| | - Yongmin Baek
- Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - Seok Chan Yoon
- School of Electronic Engineering, Soongsil University, Seoul 06938, South Korea
| | - Yeong Je Jeong
- School of Electronic Engineering, Soongsil University, Seoul 06938, South Korea
| | - Seung Yoon Oh
- School of Electronic Engineering, Soongsil University, Seoul 06938, South Korea
| | - Kyusang Lee
- Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
- Department of Material Science and Engineering, University of Virginia, Charlottesville, Virginia 22904, United States
| | - Geonwook Yoo
- School of Electronic Engineering, Soongsil University, Seoul 06938, South Korea
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38
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Dutta D, Mukherjee S, Uzhansky M, Mohapatra PK, Ismach A, Koren E. Edge-Based Two-Dimensional α-In 2Se 3-MoS 2 Ferroelectric Field Effect Device. ACS APPLIED MATERIALS & INTERFACES 2023; 15:18505-18515. [PMID: 37000129 DOI: 10.1021/acsami.3c00590] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Heterostructures based on two-dimensional materials offer the possibility to achieve synergistic functionalities, which otherwise remain secluded by their individual counterparts. Herein, ferroelectric polarization switching in α-In2Se3 has been utilized to engineer multilevel nonvolatile conduction states in a partially overlapping α-In2Se3-MoS2-based ferroelectric semiconducting field effect device. In particular, we demonstrate how the intercoupled ferroelectric nature of α-In2Se3 allows to nonvolatilely switch between n-i and n-i-n type junction configurations based on a novel edge state actuation mechanism, paving the way for subnanometric scale nonvolatile device miniaturization. Furthermore, the induced asymmetric polarization enables enhanced photogenerated carriers' separation, resulting in an extremely high photoresponse of ∼1275 A/W in the visible range and strong nonvolatile modulation of the bright A- and B- excitonic emission channels in the overlaying MoS2 monolayer. Our results show significant potential to harness the switchable polarization in partially overlapping α-In2Se3-MoS2 based FeFETs to engineer multimodal, nonvolatile nanoscale electronic and optoelectronic devices.
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Affiliation(s)
- Debopriya Dutta
- Nanoscale Electronic Materials and Devices Laboratory, Faculty of Materials Science and Engineering, Technion - Israel Institute of Technology, Haifa 3200003, Israel
| | - Subhrajit Mukherjee
- Nanoscale Electronic Materials and Devices Laboratory, Faculty of Materials Science and Engineering, Technion - Israel Institute of Technology, Haifa 3200003, Israel
| | - Michael Uzhansky
- Nanoscale Electronic Materials and Devices Laboratory, Faculty of Materials Science and Engineering, Technion - Israel Institute of Technology, Haifa 3200003, Israel
| | - Pranab K Mohapatra
- Department of Materials Science and Engineering, Tel Aviv University, Ramat Aviv, Tel Aviv 6997801, Israel
| | - Ariel Ismach
- Department of Materials Science and Engineering, Tel Aviv University, Ramat Aviv, Tel Aviv 6997801, Israel
| | - Elad Koren
- Nanoscale Electronic Materials and Devices Laboratory, Faculty of Materials Science and Engineering, Technion - Israel Institute of Technology, Haifa 3200003, Israel
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39
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Soliman M, Maity K, Gloppe A, Mahmoudi A, Ouerghi A, Doudin B, Kundys B, Dayen JF. Photoferroelectric All-van-der-Waals Heterostructure for Multimode Neuromorphic Ferroelectric Transistors. ACS APPLIED MATERIALS & INTERFACES 2023; 15:15732-15744. [PMID: 36919904 PMCID: PMC10375436 DOI: 10.1021/acsami.3c00092] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Interface-driven effects in ferroelectric van der Waals (vdW) heterostructures provide fresh opportunities in the search for alternative device architectures toward overcoming the von Neumann bottleneck. However, their implementation is still in its infancy, mostly by electrical control. It is of utmost interest to develop strategies for additional optical and multistate control in the quest for novel neuromorphic architectures. Here, we demonstrate the electrical and optical control of the ferroelectric polarization states of ferroelectric field effect transistors (FeFET). The FeFETs, fully made of ReS2/hBN/CuInP2S6 vdW materials, achieve an on/off ratio exceeding 107, a hysteresis memory window up to 7 V wide, and multiple remanent states with a lifetime exceeding 103 s. Moreover, the ferroelectric polarization of the CuInP2S6 (CIPS) layer can be controlled by photoexciting the vdW heterostructure. We perform wavelength-dependent studies, which allow for identifying two mechanisms at play in the optical control of the polarization: band-to-band photocarrier generation into the 2D semiconductor ReS2 and photovoltaic voltage into the 2D ferroelectric CIPS. Finally, heterosynaptic plasticity is demonstrated by operating our FeFET in three different synaptic modes: electrically stimulated, optically stimulated, and optically assisted synapse. Key synaptic functionalities are emulated including electrical long-term plasticity, optoelectrical plasticity, optical potentiation, and spike rate-dependent plasticity. The simulated artificial neural networks demonstrate an excellent accuracy level of 91% close to ideal-model synapses. These results provide a fresh background for future research on photoferroelectric vdW systems and put ferroelectric vdW heterostructures on the roadmap for the next neuromorphic computing architectures.
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Affiliation(s)
- Mohamed Soliman
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504, 23 rue du Loess, Strasbourg 67034, France
| | - Krishna Maity
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504, 23 rue du Loess, Strasbourg 67034, France
| | - Arnaud Gloppe
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504, 23 rue du Loess, Strasbourg 67034, France
| | - Aymen Mahmoudi
- CNRS, Centre de Nanosciences et de Nanotechnologies, Université Paris-Saclay, 91120 Palaiseau, France
| | - Abdelkarim Ouerghi
- CNRS, Centre de Nanosciences et de Nanotechnologies, Université Paris-Saclay, 91120 Palaiseau, France
| | - Bernard Doudin
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504, 23 rue du Loess, Strasbourg 67034, France
- Institut Universitaire de France (IUF), 1 rue Descartes, 75231 cedex 05 Paris, France
| | - Bohdan Kundys
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504, 23 rue du Loess, Strasbourg 67034, France
| | - Jean-Francois Dayen
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504, 23 rue du Loess, Strasbourg 67034, France
- Institut Universitaire de France (IUF), 1 rue Descartes, 75231 cedex 05 Paris, France
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40
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Liao J, Wen W, Wu J, Zhou Y, Hussain S, Hu H, Li J, Liaqat A, Zhu H, Jiao L, Zheng Q, Xie L. Van der Waals Ferroelectric Semiconductor Field Effect Transistor for In-Memory Computing. ACS NANO 2023; 17:6095-6102. [PMID: 36912657 DOI: 10.1021/acsnano.3c01198] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
In-memory computing is a highly efficient approach for breaking the bottleneck of von Neumann architectures, i.e., reducing redundant latency and energy consumption during the data transfer between the physically separated memory and processing units. Herein we have designed a in-memory computing device, a van der Waals ferroelectric semiconductor (InSe) based metal-oxide-ferroelectric semiconductor field-effect transistor (MOfeS-FET). This MOfeS-FET integrates memory and logic functions in the same material, in which the out-of-plane (OOP) ferroelectric polarization in InSe is used for data storage and the semiconducting property is used for the logic computation. The MOfeS-FET shows a long retention time with high on/off ratios (>106), high program/erase (P/E) ratios (103), and stable cyclic endurance. Moreover, inverter, programmable NAND, and NOR Boolean logic operations with nonvolatile storage of the results have all been demonstrated using our approach. These findings highlight the potential of van der Waals ferroelectric semiconductor-based MOfeS-FETs in the in-memory computing and their potential of achieving size scaling beyond Moore's law.
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Affiliation(s)
- Junyi Liao
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, P.R. China
- Department of Chemistry, Tsinghua University, Beijing 100084, P.R. China
- University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Wen Wen
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, P.R. China
| | - Juanxia Wu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, P.R. China
| | - Yaming Zhou
- Department of Chemistry, Tsinghua University, Beijing 100084, P.R. China
| | - Sabir Hussain
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, P.R. China
| | - Haowen Hu
- School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P.R. China
| | - Jiawei Li
- School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P.R. China
| | - Adeel Liaqat
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, P.R. China
| | - Hongwei Zhu
- School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P.R. China
| | - Liying Jiao
- Department of Chemistry, Tsinghua University, Beijing 100084, P.R. China
| | - Qiang Zheng
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, P.R. China
- University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Liming Xie
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, P.R. China
- University of Chinese Academy of Sciences, Beijing 100049, P.R. China
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41
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Li W, Guo Y, Luo Z, Wu S, Han B, Hu W, You L, Watanabe K, Taniguchi T, Alava T, Chen J, Gao P, Li X, Wei Z, Wang LW, Liu YY, Zhao C, Zhan X, Han ZV, Wang H. A Gate Programmable van der Waals Metal-Ferroelectric-Semiconductor Vertical Heterojunction Memory. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2208266. [PMID: 36398430 DOI: 10.1002/adma.202208266] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/08/2022] [Revised: 11/03/2022] [Indexed: 06/16/2023]
Abstract
Ferroelectricity, one of the keys to realize non-volatile memories owing to the remanent electric polarization, is an emerging phenomenon in the 2D limit. Yet the demonstrations of van der Waals (vdW) memories using 2D ferroelectric materials as an ingredient are very limited. Especially, gate-tunable ferroelectric vdW memristive device, which holds promises in future multi-bit data storage applications, remains challenging. Here, a gate-programmable multi-state memory is shown by vertically assembling graphite, CuInP2 S6 , and MoS2 layers into a metal(M)-ferroelectric(FE)-semiconductor(S) architecture. The resulted devices seamlessly integrate the functionality of both FE-memristor (with ON-OFF ratios exceeding 105 and long-term retention) and metal-oxide-semiconductor field effect transistor (MOS-FET). Thus, it yields a prototype of gate tunable giant electroresistance with multi-levelled ON-states in the FE-memristor in the vertical vdW assembly. First-principles calculations further reveal that such behaviors originate from the specific band alignment between the FE-S interface. Our findings pave the way for the engineering of ferroelectricity-mediated memories in future implementations of 2D nanoelectronics.
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Affiliation(s)
- Wanying Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
- School of Material Science and Engineering, University of Science and Technology of China, Anhui, 230026, P. R. China
| | - Yimeng Guo
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
- School of Material Science and Engineering, University of Science and Technology of China, Anhui, 230026, P. R. China
| | - Zhaoping Luo
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
| | - Shuhao Wu
- School of Information Science and Engineering (ISE), Shandong University, Qingdao, 266000, P. R. China
| | - Bo Han
- International Center for Quantum Materials, and Electron Microscopy Laboratory, School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Weijin Hu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
| | - Lu You
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou, 215006, P. R. China
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Thomas Alava
- Université Grenoble Alpes, CEA, LETI, Grenoble, 38000, France
| | - Jiezhi Chen
- School of Information Science and Engineering (ISE), Shandong University, Qingdao, 266000, P. R. China
| | - Peng Gao
- International Center for Quantum Materials, and Electron Microscopy Laboratory, School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Xiuyan Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
| | - Lin-Wang Wang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
| | - Yue-Yang Liu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
| | - Chengxin Zhao
- Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou, 730000, P. R. China
- School of Nuclear Science and Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Xuepeng Zhan
- School of Information Science and Engineering (ISE), Shandong University, Qingdao, 266000, P. R. China
| | - Zheng Vitto Han
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, 030006, P. R. China
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opto-Electronics, Shanxi University, Taiyuan, 030006, P. R. China
| | - Hanwen Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
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42
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Han W, Zheng X, Yang K, Tsang CS, Zheng F, Wong LW, Lai KH, Yang T, Wei Q, Li M, Io WF, Guo F, Cai Y, Wang N, Hao J, Lau SP, Lee CS, Ly TH, Yang M, Zhao J. Phase-controllable large-area two-dimensional In 2Se 3 and ferroelectric heterophase junction. NATURE NANOTECHNOLOGY 2023; 18:55-63. [PMID: 36509923 DOI: 10.1038/s41565-022-01257-3] [Citation(s) in RCA: 24] [Impact Index Per Article: 24.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/08/2022] [Accepted: 10/06/2022] [Indexed: 06/17/2023]
Abstract
Memory transistors based on two-dimensional (2D) ferroelectric semiconductors are intriguing for next-generation in-memory computing. To date, several 2D ferroelectric materials have been unveiled, among which 2D In2Se3 is the most promising, as all the paraelectric (β), ferroelectric (α) and antiferroelectric (β') phases are found in 2D quintuple layers. However, the large-scale synthesis of 2D In2Se3 films with the desired phase is still absent, and the stability for each phase remains obscure. Here we show the successful growth of centimetre-scale 2D β-In2Se3 film by chemical vapour deposition including distinct centimetre-scale 2D β'-In2Se3 film by an InSe precursor. We also demonstrate that as-grown 2D β'-In2Se3 films on mica substrates can be delaminated or transferred onto flexible or uneven substrates, yielding α-In2Se3 films through a complete phase transition. Thus, a full spectrum of paraelectric, ferroelectric and antiferroelectric 2D films can be readily obtained by means of the correlated polymorphism in 2D In2Se3, enabling 2D memory transistors with high electron mobility, and polarizable β'-α In2Se3 heterophase junctions with improved non-volatile memory performance.
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Affiliation(s)
- Wei Han
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China
- Hubei Yangtze Memory Laboratories, Hubei University, Wuhan, China
| | - Xiaodong Zheng
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China
| | - Ke Yang
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China
- Department of Computing, The Hong Kong Polytechnic University, Kowloon, China
| | - Chi Shing Tsang
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China
| | - Fangyuan Zheng
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China
| | - Lok Wing Wong
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China
| | - Ka Hei Lai
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China
| | - Tiefeng Yang
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, China
- City University of Hong Kong, Shenzhen Research Institute, Shenzhen, China
| | - Qi Wei
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China
| | - Mingjie Li
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China
| | - Weng Fu Io
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China
| | - Feng Guo
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China
| | - Yuan Cai
- Department of Physics, Hong Kong University of Science and Technology, Hong Kong, China
| | - Ning Wang
- Department of Physics, Hong Kong University of Science and Technology, Hong Kong, China
| | - Jianhua Hao
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China
| | - Shu Ping Lau
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China
| | - Chun-Sing Lee
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, China
| | - Thuc Hue Ly
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, China.
- City University of Hong Kong, Shenzhen Research Institute, Shenzhen, China.
| | - Ming Yang
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China.
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China.
| | - Jiong Zhao
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, China.
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China.
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43
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Liu Y, Wang X, Fan F, Li C. Bulk Photovoltage Effect in Ferroelectric BaTiO 3. J Phys Chem Lett 2022; 13:11071-11075. [PMID: 36416728 DOI: 10.1021/acs.jpclett.2c03194] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Due to the unusual charge separation mechanism and anomalous photovoltaic effects, the bulk photovoltage effect in ferroelectric semiconductors has attracted a great deal of attention in solar energy conversion, especially in attempts to utilize nonthermalized carriers. Among the various mechanisms that have been proposed for interpreting the photovoltaic effect, a shift mechanism was derived from quantum phenomena, which have been modeled and studied for many years. However, the concurrent shift and ballistic mechanism make investigating the ferroelectric bulk photovoltage effect complex and challenging. Here, taking a tetragonal ferroelectric BaTiO3 single crystal as a prototype, we report an approach for distinguishing the shift and ballistic mechanism-induced surface photovoltage. The results indicate different effects on the charge separation of the ballistic mechanism and shift mechanisms, as evidenced by surface photovoltage measurement. Interestingly, the shift and ballistic mechanisms afford charge separation in two opposite directions but on the same order of magnitude under monochromatic superband illumination. Our results provide facile and efficient methods for clarifying the shift and ballistic mechanisms in ferroelectrics.
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Affiliation(s)
- Yong Liu
- State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian National Laboratory for Clean Energy, Dalian116023, China
| | - Xun Wang
- State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian National Laboratory for Clean Energy, Dalian116023, China
| | - Fengtao Fan
- State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian National Laboratory for Clean Energy, Dalian116023, China
| | - Can Li
- State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian National Laboratory for Clean Energy, Dalian116023, China
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44
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Liu Y, Zhang M, Wang Z, He J, Zhang J, Ye S, Wang X, Li D, Yin H, Zhu Q, Jing H, Weng Y, Pan F, Chen R, Li C, Fan F. Bipolar charge collecting structure enables overall water splitting on ferroelectric photocatalysts. Nat Commun 2022; 13:4245. [PMID: 35869136 PMCID: PMC9307613 DOI: 10.1038/s41467-022-32002-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/19/2022] [Accepted: 07/13/2022] [Indexed: 11/09/2022] Open
Abstract
AbstractFerroelectrics are considered excellent photocatalytic candidates for solar fuel production because of the unidirectional charge separation and above-gap photovoltage. Nevertheless, the performance of ferroelectric photocatalysts is often moderate. A few studies showed that these types of photocatalysts could achieve overall water splitting. This paper proposes an approach to fabricating interfacial charge-collecting nanostructures on positive and negative domains of ferroelectric, enabling water splitting in ferroelectric photocatalysts. The present study observes efficient accumulations of photogenerated electrons and holes within their thermalization length (~50 nm) around Au nanoparticles located in the positive and negative domains of a BaTiO3 single crystal. Photocatalytic overall water splitting is observed on a ferroelectric BaTiO3 single crystal after assembling oxidation and reduction cocatalysts on the positively and negatively charged Au nanoparticles, respectively. The fabrication of bipolar charge-collecting structures on ferroelectrics to achieve overall water splitting offers a way to utilize the energetic photogenerated charges in solar energy conversion.
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45
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Jin T, Mao J, Gao J, Han C, Loh KP, Wee ATS, Chen W. Ferroelectrics-Integrated Two-Dimensional Devices toward Next-Generation Electronics. ACS NANO 2022; 16:13595-13611. [PMID: 36099580 DOI: 10.1021/acsnano.2c07281] [Citation(s) in RCA: 23] [Impact Index Per Article: 11.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Ferroelectric materials play an important role in a wide spectrum of semiconductor technologies and device applications. Two-dimensional (2D) van der Waals (vdW) ferroelectrics with surface-insensitive ferroelectricity that is significantly different from their traditional bulk counterparts have further inspired intensive interest. Integration of ferroelectrics into 2D-layered-material-based devices is expected to offer intriguing working principles and add desired functionalities for next-generation electronics. Herein, fundamental properties of ferroelectric materials that are compatible with 2D devices are introduced, followed by a critical review of recent advances on the integration of ferroelectrics into 2D devices. Representative device architectures and corresponding working mechanisms are discussed, such as ferroelectrics/2D semiconductor heterostructures, 2D ferroelectric tunnel junctions, and 2D ferroelectric diodes. By leveraging the favorable properties of ferroelectrics, a variety of functional 2D devices including ferroelectric-gated negative capacitance field-effect transistors, programmable devices, nonvolatile memories, and neuromorphic devices are highlighted, where the application of 2D vdW ferroelectrics is particularly emphasized. This review provides a comprehensive understanding of ferroelectrics-integrated 2D devices and discusses the challenges of applying them into commercial electronic circuits.
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Affiliation(s)
- Tengyu Jin
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou 350207, P. R. China
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - Jingyu Mao
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - Jing Gao
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - Cheng Han
- SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Kian Ping Loh
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou 350207, P. R. China
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Andrew T S Wee
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - Wei Chen
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou 350207, P. R. China
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
- National University of Singapore (Suzhou) Research Institute, 377 Lin Quan Street, Suzhou Industrial Park, Suzhou 215123, P. R. China
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46
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Jiang Y, Zhang L, Wang R, Li H, Li L, Zhang S, Li X, Su J, Song X, Xia C. Asymmetric Ferroelectric-Gated Two-Dimensional Transistor Integrating Self-Rectifying Photoelectric Memory and Artificial Synapse. ACS NANO 2022; 16:11218-11226. [PMID: 35730563 DOI: 10.1021/acsnano.2c04271] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Ferroelectric field-effect transistors (Fe-FET) are promising candidates for future information devices. However, they suffer from low endurance and short retention time, which retards the application of processing memory in the same physical processes. Here, inspired by the ferroelectric proximity effects, we design a reconfigurable two-dimensional (2D) MoS2 transistor featuring with asymmetric ferroelectric gate, exhibiting high memory and logic ability with a program/erase ratio of over 106 and a self-rectifying ratio of 103. Interestingly, the robust electric and optic cycling are obtained with a large switching ratio of 106 and nine distinct resistance states upon optical excitation with excellent nonvolatile characteristics. Meanwhile, the operation of memory mimics the synapse behavior in response to light spikes with different intensity and number. This design realizes an integration of robust processing memory in one single device, which demonstrates a considerable potential of an asymmetric ferroelectric gate in the development of Fe-FETs for logic processing and nonvolatile memory applications.
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Affiliation(s)
- Yurong Jiang
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China
| | - Linlin Zhang
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China
| | - Rui Wang
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China
| | - Hongzhi Li
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China
| | - Lin Li
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China
| | - Suicai Zhang
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China
| | - Xueping Li
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China
| | - Jian Su
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China
| | - Xiaohui Song
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China
| | - Congxin Xia
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China
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47
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Singh P, Baek S, Yoo HH, Niu J, Park JH, Lee S. Two-Dimensional CIPS-InSe van der Waal Heterostructure Ferroelectric Field Effect Transistor for Nonvolatile Memory Applications. ACS NANO 2022; 16:5418-5426. [PMID: 35234041 DOI: 10.1021/acsnano.1c09136] [Citation(s) in RCA: 19] [Impact Index Per Article: 9.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Channel current conduction modulation with the spontaneous polarization of ferroelectric films in ferroelectric field-effect transistors (FeFETs) has been widely investigated. Low interface quality and thermodynamic instability owing to the presence of dangling bonds in the conventional ferroelectrics have limited the memory retention and endurance of FeFETs. This, in turn, prevents their commercialization. However, the atomically thin nature of 2D ferroelectric, semiconducting, and insulating films facilitate the achievement of trap-free interfaces as van der Waal heterostructures (vdWHs) to develop FeFETs with long data retention and endurance characteristics. Here, we demonstrate a 2D vdWH FeFET fabricated with ferroelectric CuInP2S6 (CIPS), hexagonal boron nitride (h-BN) as the dielectric, and InSe as the ferroelectric semiconductor channel. The device shows an excellent performance as nonvolatile memory (NVM) with its large memory window (4.6 V at a voltage sweep of 5 V), high drain current on/off ratio (>104), high endurance, and long data retention (>104 s). These results demonstrate the considerable potential of vdWHs for the development of FeFETs for logic and NVM applications.
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Affiliation(s)
- Prashant Singh
- SKKUAdvanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Korea
| | - Sungpyo Baek
- SKKUAdvanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Korea
| | - Hyun Ho Yoo
- SKKUAdvanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Korea
| | - Jingjie Niu
- SKKUAdvanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Korea
| | - Jin-Hong Park
- SKKUAdvanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Korea
| | - Sungjoo Lee
- SKKUAdvanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Korea
- Department of Nano Engineering, Sungkyunkwan University, Suwon 440-746, Korea
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48
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Wang Z, Liu X, Zhou X, Yuan Y, Zhou K, Zhang D, Luo H, Sun J. Reconfigurable Quasi-Nonvolatile Memory/Subthermionic FET Functions in Ferroelectric-2D Semiconductor vdW Architectures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2200032. [PMID: 35194847 DOI: 10.1002/adma.202200032] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/03/2022] [Revised: 02/11/2022] [Indexed: 06/14/2023]
Abstract
The functional reconfiguration of transistors and memory in homogenous ferroelectric devices offers significant opportunities for implementing the concepts of in-memory computing and logic-memory monolithic integration. Thus far, reconfiguration is realized through programmable doping profiles in the semiconductor channel using multiple-gate operation. This complex device architecture limits further scaling to match the overall chip requirements. Here, reconfigurable memory/transistor functionalities in a ferroelectric-gated van der Waals transistor by controlling the behavior of ferroelectric oxygen vacancies at the interface are demonstrated. Short- and long-term memory functions are demonstrated by modulating the border oxygen vacancy distribution and the associated charge dynamics. The quasi-nonvolatile long-term memory exhibits data retention of over 105 s and endurance of up to 5 × 105 cycles, verifying its applicability as a potential device platform for neuromorphic networks. More importantly, by modulating the ferroelectricity of the interfacial domains with the interactions of oxygen vacancies, a hysteresis-free logic transistor is realized with a subthermionic subthreshold swing down to 46 mV dec-1 , which resembles a negative-capacitance field-effect transistor. The new concept of achieving functional reconfiguration with prior device performance in a single-gate ferroelectric field-effect transistor is of great advantage in future integrated circuit applications.
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Affiliation(s)
- Zhongwang Wang
- School of Physics and Electronics, Central South University, Changsha, 410083, China
| | - Xiaochi Liu
- School of Physics and Electronics, Central South University, Changsha, 410083, China
| | - Xuefan Zhou
- State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083, China
| | - Yahua Yuan
- School of Physics and Electronics, Central South University, Changsha, 410083, China
| | - Kechao Zhou
- State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083, China
| | - Dou Zhang
- State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083, China
| | - Hang Luo
- State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083, China
| | - Jian Sun
- School of Physics and Electronics, Central South University, Changsha, 410083, China
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49
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Tang W, Zhang X, Yu H, Gao L, Zhang Q, Wei X, Hong M, Gu L, Liao Q, Kang Z, Zhang Z, Zhang Y. A van der Waals Ferroelectric Tunnel Junction for Ultrahigh-Temperature Operation Memory. SMALL METHODS 2022; 6:e2101583. [PMID: 35212464 DOI: 10.1002/smtd.202101583] [Citation(s) in RCA: 13] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/20/2021] [Revised: 01/27/2022] [Indexed: 06/14/2023]
Abstract
Facing the constant scaling down and thus increasingly severe self-heating effect, developing ultrathin and heat-insensitive ferroelectric devices is essential for future electronics. However, conventional ultrathin ferroelectrics and most 2D ferroelectric materials (2DFMs) are not suitable for high-temperature operation due to their low Curie temperature. Here, by using few-layer α-In2 Se3 , a special 2DFM with high Curie temperature, van der Waals (vdW) ferroelectric tunnel junction (FTJ) memories that deliver outstanding and reliable performance at both room and high temperatures are constructed. The vdW FTJs offer a large on/off ratio of 104 at room temperature and still reveal excellent on/off ratio at an ultrahigh temperature of 470 K, which will fail down other 2DFMs. Moreover, long retention and reliable cyclic endurance at high temperature are achieved, showing robust thermal stability of the vdW FTJ memory. The observations of this work demonstrate an exciting promise of α-In2 Se3 for reliable service in high temperature either from self-heating or harsh environments.
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Affiliation(s)
- Wenhui Tang
- Academy for Advanced Interdisciplinary Science and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Xiankun Zhang
- Academy for Advanced Interdisciplinary Science and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Huihui Yu
- Academy for Advanced Interdisciplinary Science and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Li Gao
- Academy for Advanced Interdisciplinary Science and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Qinghua Zhang
- Collaborative Innovation Center of Quantum Matter, Beijing, 100871, China
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100080, China
| | - Xiaofu Wei
- Academy for Advanced Interdisciplinary Science and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Mengyu Hong
- Academy for Advanced Interdisciplinary Science and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Lin Gu
- Collaborative Innovation Center of Quantum Matter, Beijing, 100871, China
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100080, China
| | - Qingliang Liao
- Academy for Advanced Interdisciplinary Science and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Zhuo Kang
- Academy for Advanced Interdisciplinary Science and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Zheng Zhang
- Academy for Advanced Interdisciplinary Science and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Yue Zhang
- Academy for Advanced Interdisciplinary Science and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
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50
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Wang S, Pan X, Lyu L, Wang CY, Wang P, Pan C, Yang Y, Wang C, Shi J, Cheng B, Yu W, Liang SJ, Miao F. Nonvolatile van der Waals Heterostructure Phototransistor for Encrypted Optoelectronic Logic Circuit. ACS NANO 2022; 16:4528-4535. [PMID: 35167274 DOI: 10.1021/acsnano.1c10978] [Citation(s) in RCA: 16] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
With the rising demand for information security, there has been a surge of interest in harnessing the intrinsic physical properties of device for designing a secure logic circuit. Here we provide an innovative approach to realize the secure optoelectronic logic circuit based on nonvolatile van der Waals (vdW) heterostructure phototransistors. The phototransistors comprising WSe2 and h-BN flakes exhibit electrical tunability of nonvolatile conductance under cooperative operations of electrical and light stimulus. This intriguing feature allows the phototransistor to work as a building block for the design of secure optoelectronic logic circuit in which the information encryption can be directly achieved with a designed secret key. On the basis of this approach, we assemble two phototransistors into an optoelectronic hybrid circuit and implement a functionally complete set of logic gates (i.e., NOR, XOR, and NAND) in a reconfigurable manner. Our findings highlight the potential of nonvolatile phototransistors for the development of reconfigurable secure optoelectronic circuits.
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Affiliation(s)
- Shuang Wang
- Institute of Brain-Inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Xuan Pan
- Institute of Brain-Inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Lingyuan Lyu
- Institute of Brain-Inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
- Physics Department, Harvey Mudd College, Claremont, California 91711, United States
| | - Chen-Yu Wang
- Institute of Brain-Inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Pengfei Wang
- Institute of Brain-Inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Chen Pan
- Institute of Interdisciplinary Physical Sciences, School of Science, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Yuekun Yang
- Institute of Brain-Inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Cong Wang
- Institute of Brain-Inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Jingwen Shi
- Institute of Brain-Inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Bin Cheng
- Institute of Interdisciplinary Physical Sciences, School of Science, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Wentao Yu
- Institute of Interdisciplinary Physical Sciences, School of Science, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Shi-Jun Liang
- Institute of Brain-Inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Feng Miao
- Institute of Brain-Inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
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