Tailoring sample-wide pseudo-magnetic fields on a graphene-black phosphorus heterostructure

Designing Moiré Patterns by Shearing

We analyze the elastic properties, structural effects, and low-energy physics of a sheared nanoribbon placed on top of graphene, which creates a gradually changing moiré pattern. By means of a classical elastic model we derive the strains in the ribbon and we obtain its electronic energy spectrum with a scaled tight-binding model. The size of the sheared region is determined by the balance between elastic and van der Waals energy, and different regimes are identified. Near the clamped edge, moderate strains and small twist angles lead to one-dimensional channels. Near the sheared edge, a long region behaves like magic angle twisted bilayer graphene (TBG), showing a sharp peak in the density of states, mostly isolated from the rest of the spectrum. We also calculate the band topology along the ribbon and we find that it is stable for large intervals of strains and twist angles. Together with the experimental observations, these results show that the sheared nanoribbon geometry is ideal for exploring superconductivity and correlated phases in TBG in the very sought-after regime of ultralow twist angle disorder.

Infrared optoelectronics in twisted black phosphorus

Electrons and holes, fundamental charge carriers in semiconductors, dominate optical transitions and detection processes. Twisted van der Waals (vdW) heterostructures offer an effective approach to manipulate radiation, separation, and collection processes of electron-hole pairs by creating an atomically sharp interface. Here, we demonstrate that twisted interfaces in vdW layered black phosphorus (BP), an infrared semiconductor with highly anisotropic crystalline structure and properties, can significantly alter both recombination and separation processes of electron-hole pairs. On the one hand, the twisted interface breaks the symmetry of optical transition states resulting in infrared light emission of originally symmetry-forbidden optical states along the zigzag direction. On the other hand, spontaneous electronic polarization/bulk photovoltaic effect is generated at the twisted interface enabling effective separation of electron-hole pairs without external voltage bias. This is supported by first-principles calculations and repeated experiments at various twisted angles from 0 to 90°. Importantly, these phenomena can be observed in twisted heterostructures with thickness beyond two-dimensional. Our results suggest that the engineering of vdW twisted interfaces is an effective strategy for manipulating the optoelectronic properties of materials and constructing functional devices.

Real-Space Topology-Engineering of Skyrmionic Spin Textures in a van der Waals Ferromagnet Fe3GaTe2

Realizing magnetic skyrmions in two-dimensional (2D) van der Waals (vdW) ferromagnets offers unparalleled prospects for future spintronic applications. The room-temperature ferromagnet Fe3GaTe2 provides an ideal platform for tailoring these magnetic solitons. Here, skyrmions of distinct topological charges are artificially introduced and engineered by using magnetic force microscopy (MFM). The skyrmion lattice is realized by a specific field-cooling process and can be further erased and painted via delicate manipulation of the tip stray field. The skyrmion lattice with opposite topological charges (S = ±1) can be tailored at the target regions to form topological skyrmion junctions (TSJs) with specific configurations. The delicate interplay of TSJs and spin-polarized device current were finally investigated via the in situ transport measurements, alongside the topological stability of TSJs. Our results demonstrate that Fe3GaTe2 not only serves as a potential building block for skyrmion-based spintronic devices, but also presents prospects for Fe3GaTe2-based heterostructures with the engineered topological spin textures.

Manipulating 2D Materials through Strain Engineering

This review explores the growing interest in 2D layered materials, such as graphene, h-BN, transition metal dichalcogenides (TMDs), and black phosphorus (BP), with a specific focus on recent advances in strain engineering. Both experimental and theoretical results are delved into, highlighting the potential of strain to modulate physical properties, thereby enhancing device performance. Various strain engineering methods are summarized, and the impact of strain on the electrical, optical, magnetic, thermal, and valleytronic properties of 2D materials is thoroughly examined. Finally, the review concludes by addressing potential applications and challenges in utilizing strain engineering for functional devices, offering valuable insights for further research and applications in optoelectronics, thermionics, and spintronics.

Solution-Processable Large-Area Black Phosphorus/Reduced Graphene Oxide Schottky Junction for High-Temperature Broadband Photodetectors

2D materials-based broadband photodetectors have extensive applications in security monitoring and remote sensing fields, especially in supersonic aircraft that require reliable performance under extreme high-temperature conditions. However, the integration of large-area heterostructures with 2D materials often involves high-temperature deposition methods, and also limited options and size of substrates. Herein, a liquid-phase spin-coating method is presented based on the interface engineering to prepare larger-area Van der Waals heterojunctions of black phosphorus (BP)/reduced graphene oxide (RGO) films at room temperature on arbitrary substrates of any required size. Importantly, this method avoids the common requirement of high-temperature, and prevents the curling or stacking in 2D materials during the liquid-phase film formation. The BP/RGO films-based devices exhibit a wide spectral photo-response, ranging from the visible of 532 nm to infrared range of 2200 nm. Additionally, due to Van der Waals interface of Schottky junction, the array devices provide infrared detection at temperatures up to 400 K, with an outstanding photoresponsivity (R) of 12 A W-1 and a specific detectivity (D*) of ≈2.4 × 109 Jones. This work offers an efficient approach to fabricate large-area 2D Schottky junction films by solution-coating for high-temperature infrared photodetectors.

In-plane anisotropic two-dimensional materials for twistronics

In-plane anisotropic two-dimensional (2D) materials exhibit in-plane orientation-dependent properties. The anisotropic unit cell causes these materials to show lower symmetry but more diverse physical properties than in-plane isotropic 2D materials. In addition, the artificial stacking of in-plane anisotropic 2D materials can generate new phenomena that cannot be achieved in in-plane isotropic 2D materials. In this perspective we provide an overview of representative in-plane anisotropic 2D materials and their properties, such as black phosphorus, group IV monochalcogenides, group VI transition metal dichalcogenides with 1T' and Tdphases, and rhenium dichalcogenides. In addition, we discuss recent theoretical and experimental investigations of twistronics using in-plane anisotropic 2D materials. Both in-plane anisotropic 2D materials and their twistronics hold considerable potential for advancing the field of 2D materials, particularly in the context of orientation-dependent optoelectronic devices.

Mechanical Control of Quantum Transport in Graphene

2D materials (2DMs) are fundamentally electro-mechanical systems. Their environment unavoidably strains them and modifies their quantum transport properties. For instance, a simple uniaxial strain can completely turn off the conductance of ballistic graphene or switch on/off the superconducting phase of magic-angle bilayer graphene. This article reports measurements of quantum transport in strained graphene transistors which agree quantitatively with models based on mechanically-induced gauge potentials. A scalar potential is mechanically induced in situ to modify graphene's work function by up to 25 meV. Mechanically generated vector potentials suppress the ballistic conductance of graphene by up to 30% and control its quantum interferences. The data are measured with a custom experimental platform able to precisely tune both the mechanics and electrostatics of suspended graphene transistors at low-temperature over a broad range of strain (up to 2.6%). This work opens many opportunities to harness quantitative strain effects in 2DM quantum transport and technologies.

Graphene binding on black phosphorus enables high on/off ratios and mobility

Graphene is one of the most promising candidates for integrated circuits due to its robustness against short-channel effects, inherent high carrier mobility and desired gapless nature for Ohmic contact, but it is difficult to achieve satisfactory on/off ratios even at the expense of its carrier mobility, limiting its device applications. Here, we present a strategy to realize high back-gate switching ratios in a graphene monolayer with well-maintained high mobility by forming a vertical heterostructure with a black phosphorus multi-layer. By local current annealing, strain is introduced within an established area of the graphene, which forms a reflective interface with the rest of the strain-free area and thus generates a robust off-state via local current depletion. Applying a positive back-gate voltage to the heterostructure can keep the black phosphorus insulating, while a negative back-gate voltage changes the black phosphorus to be conductive because of hole accumulation. Then, a parallel channel is activated within the strain-free graphene area by edge-contacted electrodes, thereby largely inheriting the intrinsic carrier mobility of graphene in the on-state. As a result, the device can provide an on/off voltage ratio of >103 as well as a mobility of ∼8000 cm2 V-1 s-1 at room temperature, meeting the low-power criterion suggested by the International Roadmap for Devices and Systems.

Imaging Ultrafast Dynamics of Pressure-Driven Phase Transitions in Black Phosphorus and Anomalous Coherent Phonon Softening

Applying high pressure to effectively modulate the electronic and lattice structures of materials could unravel various physical properties associated with phase transitions. In this work, high-pressure-compatible femtosecond pump-probe microscopy was constructed to study the pressure-dependent ultrafast dynamics in black phosphorus (BP) thin films. We observed pressure-driven evolution of the electronic topological transition and three structural phases as the pressure reached ∼22 GPa, which could be clearly differentiated in the transient absorption images containing spatially resolved ultrafast carrier and coherent phonon dynamics. Surprisingly, an anomalous coherent acoustic phonon mode with pressure softening behavior was observed within the range of ∼3-8 GPa, showing distinct laser power and time dependences. Density functional theory calculations show that this mode, identified as the shear mode along the armchair orientation, gains significant electron-phonon coupling strength from out-of-plane compression that leads to decreased phonon frequency. Our results provide insights into the structure evolution of BP with pressure and hold potential for applications in microelectromechanical devices.

Recent Advances in Phosphorene: Structure, Synthesis, and Properties

Phosphorene is a 2D phosphorus atomic layer arranged in a honeycomb lattice like graphene but with a buckled structure. Since its exfoliation from black phosphorus in 2014, phosphorene has attracted tremendous research interest both in terms of synthesis and fundamental research, as well as in potential applications. Recently, significant attention in phosphorene is motivated not only by research on its fundamental physical properties as a novel 2D semiconductor material, such as tunable bandgap, strong in-plane anisotropy, and high carrier mobility, but also by the study of its wide range of potential applications, such as electronic, optoelectronic, and spintronic devices, energy conversion and storage devices. However, a lot of avenues remain to be explored including the fundamental properties of phosphorene and its device applications. This review recalls the current state of the art of phosphorene and its derivatives, touching upon topics on structure, synthesis, characterization, properties, stability, and applications. The current needs and future opportunities for phosphorene are also discussed.

Imaging quantum oscillations and millitesla pseudomagnetic fields in graphene

The exceptional control of the electronic energy bands in atomically thin quantum materials has led to the discovery of several emergent phenomena1. However, at present there is no versatile method for mapping the local band structure in advanced two-dimensional materials devices in which the active layer is commonly embedded in the insulating layers and metallic gates. Using a scanning superconducting quantum interference device, here we image the de Haas-van Alphen quantum oscillations in a model system, the Bernal-stacked trilayer graphene with dual gates, which shows several highly tunable bands2-4. By resolving thermodynamic quantum oscillations spanning more than 100 Landau levels in low magnetic fields, we reconstruct the band structure and its evolution with the displacement field with excellent precision and nanoscale spatial resolution. Moreover, by developing Landau-level interferometry, we show shear-strain-induced pseudomagnetic fields and map their spatial dependence. In contrast to artificially induced large strain, which leads to pseudomagnetic fields of hundreds of tesla5-7, we detect naturally occurring pseudomagnetic fields as low as 1 mT corresponding to graphene twisting by 1 millidegree, two orders of magnitude lower than the typical angle disorder in twisted bilayer graphene8-11. This ability to resolve the local band structure and strain at the nanoscale level enables the characterization and use of tunable band engineering in practical van der Waals devices.

Mechanical, electronic, optical, piezoelectric and ferroic properties of strained graphene and other strained monolayers and multilayers: an update

This is an update of a previous review (Naumiset al2017Rep. Prog. Phys.80096501). Experimental and theoretical advances for straining graphene and other metallic, insulating, ferroelectric, ferroelastic, ferromagnetic and multiferroic 2D materials were considered. We surveyed (i) methods to induce valley and sublattice polarisation (P) in graphene, (ii) time-dependent strain and its impact on graphene's electronic properties, (iii) the role of local and global strain on superconductivity and other highly correlated and/or topological phases of graphene, (iv) inducing polarisationPon hexagonal boron nitride monolayers via strain, (v) modifying the optoelectronic properties of transition metal dichalcogenide monolayers through strain, (vi) ferroic 2D materials with intrinsic elastic (σ), electric (P) and magnetic (M) polarisation under strain, as well as incipient 2D multiferroics and (vii) moiré bilayers exhibiting flat electronic bands and exotic quantum phase diagrams, and other bilayer or few-layer systems exhibiting ferroic orders tunable by rotations and shear strain. The update features the experimental realisations of a tunable two-dimensional Quantum Spin Hall effect in germanene, of elemental 2D ferroelectric bismuth, and 2D multiferroic NiI2. The document was structured for a discussion of effects taking place in monolayers first, followed by discussions concerning bilayers and few-layers, and it represents an up-to-date overview of exciting and newest developments on the fast-paced field of 2D materials.

Strain-Induced Quasi-1D Channels in Twisted Moiré Lattices

We study the effects of strain in moiré systems composed of honeycomb lattices. We elucidate the formation of almost perfect one-dimensional moiré patterns in twisted bilayer systems. The formation of such patterns is a consequence of an interplay between twist and strain which gives rise to a collapse of the reciprocal space unit cell. As a criterion for such collapse we find a simple relation between the two quantities and the material specific Poisson ratio. The induced one-dimensional behavior is characterized by two, usually incommensurate, periodicities. Our results offer explanations for the complex patterns of one-dimensional channels observed in low angle twisted bilayer graphene systems and twisted bilayer dicalcogenides. Our findings can be applied to any hexagonal twisted moiré pattern and can be easily extended to other geometries.

Electronic Structure of Few-Layer Black Phosphorus from μ-ARPES

Black phosphorus (BP) stands out among two-dimensional (2D) semiconductors because of its high mobility and thickness dependent direct band gap. However, the quasiparticle band structure of ultrathin BP has remained inaccessible to experiment thus far. Here we use a recently developed laser-based microfocus angle resolved photoemission (μ-ARPES) system to establish the electronic structure of 2-9 layer BP from experiment. Our measurements unveil ladders of anisotropic, quantized subbands at energies that deviate from the scaling observed in conventional semiconductor quantum wells. We quantify the anisotropy of the effective masses and determine universal tight-binding parameters, which provide an accurate description of the electronic structure for all thicknesses.

In-plane anisotropy of graphene by strong interlayer interactions with van der Waals epitaxially grown MoO3

van der Waals (vdW) epitaxy can be used to grow epilayers with different symmetries on graphene, thereby imparting unprecedented properties in graphene owing to formation of anisotropic superlattices and strong interlayer interactions. Here, we report in-plane anisotropy in graphene by vdW epitaxially grown molybdenum trioxide layers with an elongated superlattice. The grown molybdenum trioxide layers led to high p-doping of the underlying graphene up to p = 1.94 × 1013 cm-2 regardless of the thickness of molybdenum trioxide, maintaining a high carrier mobility of 8155 cm2 V-1 s-1. Molybdenum trioxide-induced compressive strain in graphene increased up to -0.6% with increasing molybdenum trioxide thickness. The asymmetrical band distortion of molybdenum trioxide-deposited graphene at the Fermi level led to in-plane electrical anisotropy with a high conductance ratio of 1.43 owing to the strong interlayer interaction of molybdenum trioxide-graphene. Our study presents a symmetry engineering method to induce anisotropy in symmetric two-dimensional (2D) materials via the formation of asymmetric superlattices with epitaxially grown 2D layers.

Strong second-harmonic generation by sublattice polarization in non-uniformly strained monolayer graphene

Despite the potential of graphene for building a variety of quantum photonic devices, its centrosymmetric nature forbids the observation of second harmonic generation (SHG) for developing second-order nonlinear devices. To activate SHG in graphene, extensive research efforts have been directed towards disrupting graphene's inversion symmetry using external stimuli like electric fields. However, these methods fail to engineer graphene's lattice symmetry, which is the root cause of the forbidden SHG. Here, we harness strain engineering to directly manipulate graphene's lattice arrangement and induce sublattice polarization to activate SHG. Surprisingly, the SHG signal is boosted 50-fold at low temperatures, which can be explained by resonant transitions between strain-induced pseudo-Landau levels. The second-order susceptibility of strained graphene is found to be larger than that of hexagonal boron nitride with intrinsic broken inversion symmetry. Our demonstration of strong SHG in strained graphene offers promising possibilities for developing high-efficiency nonlinear devices for integrated quantum circuits.

The Interaction of 2D Materials With Circularly Polarized Light

2D materials (2DMs), due to spin-valley locking degree of freedom, exhibit strongly bound exciton and chiral optical selection rules and become promising material candidates for optoelectronic and spin/valleytronic devices. Over the last decade, the manifesting of 2D materials by circularly polarized lights expedites tremendous fascinating phenomena, such as valley/exciton Hall effect, Moiré exciton, optical Stark effect, circular dichroism, circularly polarized photoluminescence, and spintronic property. In this review, recent advance in the interaction of circularly polarized light with 2D materials covering from graphene, black phosphorous, transition metal dichalcogenides, van der Waals heterostructures as well as small proportion of quasi-2D perovskites and topological materials, is overviewed. The confronted challenges and theoretical and experimental opportunities are also discussed, attempting to accelerate the prosperity of chiral light-2DMs interactions.

Giant Periodic Pseudomagnetic Fields in Strained Kagome Magnet FeSn Epitaxial Films on SrTiO3(111) Substrate

Quantum materials, particularly Dirac materials with linearly dispersing bands, can be effectively tuned by strain-induced lattice distortions leading to a pseudomagnetic field that strongly modulates their electronic properties. Here, we grow kagome magnet FeSn films, consisting of alternatingly stacked Sn₂ honeycomb (stanene) and Fe₃Sn kagome layers, on SrTiO₃(111) substrates by molecular beam epitaxy. Using scanning tunneling microscopy/spectroscopy, we show that the Sn honeycomb layer can be periodically deformed by epitaxial strain for a film thickness below 10 nm, resulting in differential conductance peaks consistent with Landau levels generated by a pseudomagnetic field greater than 1000 T. Our findings demonstrate the feasibility of strain engineering the electronic properties of topological magnets at the nanoscale.

Preparation, properties and applications of two-dimensional superlattices

As a combination concept of a 2D material and a superlattice, two-dimensional superlattices (2DSs) have attracted increasing attention recently. The natural advantages of 2D materials in their properties, dimension, diversity and compatibility, and their gradually improved technologies for preparation and device fabrication serve as solid foundations for the development of 2DSs. Compared with the existing 2D materials and even their heterostructures, 2DSs relate to more materials and elaborate architectures, leading to novel systems with more degrees of freedom to modulate material properties at the nanoscale. Here, three typical types of 2DSs, including the component, strain-induced and moiré superlattices, are reviewed. The preparation methods, properties and state-of-the-art applications of each type are summarized. An outlook of the challenges and future developments is also presented. We hope that this work can provide a reference for the development of 2DS-related research.

In-situ atomic level observation of the strain response of graphene lattice

Strain is inevitable in two-dimensional (2D) materials, regardless of whether the film is suspended or supported. However, the direct measurement of strain response at the atomic scale is challenging due to the difficulties of maintaining both flexibility and mechanical stability at low temperature under UHV conditions. In this work, we have implemented a compact nanoindentation system with a size of [Formula: see text] 160 mm[Formula: see text] [Formula: see text] 5.2 mm in a scanning tunneling microscope (STM) sample holder, which enables the reversible control of strain and gate electric field. A combination of gearbox and piezoelectric actuator allowed us to modulate the depth of the indentation continuously with nanometer precision. The 2D materials were transferred onto the polyimide film. Pd clamp was used to enhance the strain transfer from the polyimide from to the 2D layers. Using this unique technique, strain response of graphene lattice were observed at atomic precision. In the relaxed graphene, strain is induced mainly by local curvature. However, in the strained graphene with tented structure, the lattice parameters become more sensitive to the indentor height change and stretching strain is increased additionally. Moreover, the gate controllability is confirmed by measuring the dependence of the STM tip height on gate voltage.

Surface acoustic wave induced phenomena in two-dimensional materials

Surface acoustic wave (SAW)-matter interaction provides a fascinating key for inducing and manipulating novel phenomena and functionalities in two-dimensional (2D) materials. The dynamic strain field and piezo-electric field associated with propagating SAWs determine the coherent manipulation and transduction between 2D excitons and phonons. Over the past decade, many intriguing acoustic-induced effects, including the acousto-electric effect, acousto-galvanic effect, acoustic Stark effect, acoustic Hall effect and acoustic exciton transport, have been reported experimentally. However, many more phenomena, such as the valley acousto-electric effect, valley acousto-electric Hall effect and acoustic spin Hall effect, were only theoretically proposed, the experimental verification of which are yet to be achieved. In this minireview, we attempt to overview the recent breakthrough of SAW-induced phenomena covering acoustic charge transport, acoustic exciton transport and modulation, and coherent acoustic phonons. Perspectives on the opportunities of the proposed SAW-induced phenomena, as well as open experimental challenges, are also discussed, attempting to offer some guidelines for experimentalists and theorists to explore the desired exotic properties and boost practical applications of 2D materials.

Review on the Energy Transformation Application of Black Phosphorus and Its Composites

Black phosphorus (BP) is a unique two-dimensional material with excellent conductivity, and a widely tunable bandgap. In recent years, its application in the field of energy has attracted extensive attention, in terms of energy storage, due to its high theoretical specific capacity and excellent conductivity, black phosphorus is widely used as electrode material in battery and supercapacitors, while for energy generating, it has been also used as photocatalyst and electrocatalysts to split water and produce hydrogen. Black phosphorus demonstrates even better stability and catalytic performance through further construction, doping, or heterojunction. This review briefly summarizes the latest research progress of black phosphorus and its composites in energy preparation and storage, as well as ammonia nitrogen fixation, and also looks into the possible development directions in the future.

Magnetic-Field-Tunable Valley-Contrasting Pseudomagnetic Confinement in Graphene

Introducing quantum confinement has uncovered a rich set of interesting quantum phenomena and allows one to directly probe the physics of confined (quasi-)particles. In most experiments, however, an electrostatic potential is the only available method to generate quantum dots in a continuous system to confine (quasi-)particles. Here we demonstrate experimentally that inhomogeneous pseudomagnetic fields in strained graphene can introduce exotic quantum confinement of massless Dirac fermions. The pseudomagnetic fields have opposite directions in the two distinct valleys of graphene. By adding and tuning real magnetic fields, the total effective magnetic fields in the two valleys are imbalanced. By that we realized valley-contrasting spatial confinement, which lifts the valley degeneracy and results in field-tunable valley-polarized confined states in graphene. Our results provide a new avenue to manipulate the valley degree of freedom.

Realizing One-Dimensional Electronic States in Graphene via Coupled Zeroth Pseudo-Landau Levels

Strain-induced pseudomagnetic fields can mimic real magnetic fields to generate a zero-magnetic-field analog of the Landau levels (LLs), i.e., the pseudo-Landau levels (PLLs), in graphene. The distinct nature of the PLLs enables one to realize novel electronic states beyond what is feasible with real LLs. Here, we show that it is possible to realize exotic electronic states through the coupling of zeroth PLLs in strained graphene. In our experiment, nanoscale strained structures embedded with PLLs are generated along a one-dimensional (1D) channel of suspended graphene monolayer. Our results demonstrate that the zeroth PLLs of the strained structures are coupled together, exhibiting a serpentine pattern that snakes back and forth along the 1D suspended graphene monolayer. These results are verified theoretically by large-scale tight-binding calculations of the strained samples. Our result provides a new approach to realizing novel quantum states and to engineering the electronic properties of graphene by using localized PLLs as building blocks.

Probing interlayer shear thermal deformation in atomically-thin van der Waals layered materials

Atomically-thin van der Waals layered materials, with both high in-plane stiffness and bending flexibility, offer a unique platform for thermomechanical engineering. However, the lack of effective characterization techniques hinders the development of this research topic. Here, we develop a direct experimental method and effective theoretical model to study the mechanical, thermal, and interlayer properties of van der Waals materials. This is accomplished by using a carefully designed WSe₂-based heterostructure, where monolayer WSe₂ serves as an in-situ strain meter. Combining experimental results and theoretical modelling, we are able to resolve the shear deformation and interlayer shear thermal deformation of each individual layer quantitatively in van der Waals materials. Our approach also provides important interlayer coupling information as well as key thermal parameters. The model can be applied to van der Waals materials with different layer numbers and various boundary conditions for both thermally-induced and mechanically-induced deformations.

Van der Waals materials exhibit unique thermomechanical properties, but interlayer deformations are usually challenging to measure. Here, the authors exploit the strain-dependent optical properties of monolayer WSe₂ to quantitatively probe the interlayer shear thermal deformations and interlayer coupling in phosphorene and hexagonal boron nitride.

Triaxially strained suspended graphene for large-area pseudo-magnetic fields

Strain-engineered graphene has garnered much attention recently owing to the possibilities of creating substantial energy gaps enabled by pseudo-magnetic fields (PMFs). While theoretical works proposed the possibility of creating large-area PMFs by straining monolayer graphene along three crystallographic directions, clear experimental demonstration of such promising devices remains elusive. Herein, we experimentally demonstrate a triaxially strained suspended graphene structure that has the potential to possess large-scale and quasi-uniform PMFs. Our structure employs uniquely designed metal electrodes that function both as stressors and metal contacts for current injection. Raman characterization and tight-binding simulations suggest the possibility of achieving PMFs over a micrometer-scale area. Current-voltage measurements confirm an efficient current injection into graphene, showing the potential of our devices for a new class of optoelectronic applications. We also theoretically propose a photonic crystal-based laser structure that obtains strongly localized optical fields overlapping with the spatial area under uniform PMFs, thus presenting a practical route toward the realization of graphene lasers.

Emergent Fabry-Pérot Interference for Light-Matter Interaction in van der Waals WS2/SiP2 Heterostructures

Fabry-Pérot interference plays an important role in modulating the spectral intensity of optical response originating from light-matter interactions. Examples of such interference occurring in the substrate as the resonating cavity have been demonstrated and probed by two-dimensional layered materials. Similarly, the Fabry-Pérot interference can occur and modulate the optical response in the heterostructure; however, this remains elusive. Herein, we observe the Fabry-Pérot interference on photoluminescence (PL) and Raman spectra in monolayer WS₂/SiP₂ heterostructures by varying the thickness of bottom SiP₂ from 2 to 193 nm, which serves as the Fabry-Pérot cavity. Both the intensities of the PL spectra and the E_2g¹ Raman mode of WS₂/SiP₂ heterostructures first decrease to almost zero while displaying an interference increase at a SiP₂ thickness of 75 nm. Our findings clearly demonstrate the Fabry-Pérot interference in the optical response of heterostructures, providing crucial information to optimize the optical response and paving the way toward photodetector applications.

Designing New-Generation Piezoelectric Transducers by Embedding Superior Graphene-Based Thermal Regulators

Cascaded-piezoelectric-transducers (CPETs) is a key component in modern energy-conversion fields, possessing versatile applications in ultrasonic scalpels, acoustic levitation, and sonar. However, serious self-heating inevitably occurs inside high-power CPETs, severely limiting their practical applications in broader fields. To tackle this, multidirectional heat-escape channels of multidimensional (multi-D, 3D/2D) graphene films are introduced in designing new-type thermal regulators. A porous AlN-ceramic thermal-sink is creatively selected as a template for directly synthesizing graphene via a two-step chemical vapor deposition strategy. This perfect combination of 3D/2D-graphene and the AlN ceramic can integrate their complementary advantages in uniformizing, transmitting, and releasing heat. Amazingly, in the new-generation CPETs embedded with these graphene-based thermal regulators, the self-heating-induced temperature rise can be substantially reduced by ≈60% (far exceeding actual demand standard). As another kernel parameter, electroacoustic-energy-conversion efficiency is dramatically improved in the new-generation CPETs. Briefly, this research realizes the first synthesis of a novel multi-D-graphene/AlN-ceramic hybrid, and propels its brand-new application directions in new-generation energy-conversion- and thermal-management-related territories.

Giant Transport Anisotropy in ReS_{2} Revealed via Nanoscale Conducting-Path Control

The low in-plane symmetry in layered 1T'-ReS_{2} results in strong band anisotropy, while its manifestation in the electronic properties is challenging to resolve due to the lack of effective approaches for controlling the local current path. In this work, we reveal the giant transport anisotropy in monolayer to four-layer ReS_{2} by creating directional conducting paths via nanoscale ferroelectric control. By reversing the polarization of a ferroelectric polymer top layer, we induce a conductivity switching ratio of >1.5×10^{8} in the ReS_{2} channel at 300 K. Characterizing the domain-defined conducting nanowires in an insulating background shows that the conductivity ratio between the directions along and perpendicular to the Re chain can exceed 5.5×10^{4} in monolayer ReS_{2}. Theoretical modeling points to the band origin of the transport anomaly and further reveals the emergence of a flat band in few-layer ReS_{2}. Our work paves the path for implementing highly anisotropic 2D materials for designing novel collective phenomena and electron lensing applications.

Controlling Strain Relaxation by Interface Design in Highly Lattice-Mismatched Heterostructure

Strain engineering plays an important role in tuning the microstructure and properties of heterostructures. The key to implement the strain modulation to heterostructures is controlling the strain relaxation, which is generally realized by varying the thickness of thin films or changing substrates. Here, we show that interface polarity can tailor the behavior of strain relaxation in a hexagonal manganite film, whose strain state can be tuned to different extents. Using scanning transmission electron microscopy, a reconstructed atomic layer with elongated interlayer spacing and minor in-plane rotation is observed at the interface, suggesting that the bond hierarchy at interface transits from three-dimension to two-dimension, which accounts for the strain-free heteroepitaxy. Utilizing interface polarity to control the strain relaxation highlights a conceptually opt route to optimize the strain engineering and the realization of strain-free heteroepitaxy in such highly lattice-mismatched heterostructure also provides possibility to transform more bulklike functional oxides to low dimensionality.

Pseudo-magnetic field-induced slow carrier dynamics in periodically strained graphene

The creation of pseudo-magnetic fields in strained graphene has emerged as a promising route to investigate intriguing physical phenomena that would be unattainable with laboratory superconducting magnets. The giant pseudo-magnetic fields observed in highly deformed graphene can substantially alter the optical properties of graphene beyond a level that can be feasible with an external magnetic field, but the experimental signatures of the influence of such pseudo-magnetic fields have yet to be unveiled. Here, using time-resolved infrared pump-probe spectroscopy, we provide unambiguous evidence for slow carrier dynamics enabled by the pseudo-magnetic fields in periodically strained graphene. Strong pseudo-magnetic fields of ~100 T created by non-uniform strain in  graphene on nanopillars are found to significantly decelerate the relaxation processes of hot carriers by more than an order of magnitude. Our findings offer alternative opportunities to harness the properties of graphene enabled by pseudo-magnetic fields for optoelectronics and condensed matter physics.

The effect of strain-induced pseudo-magnetic fields on the optical properties of graphene has not been experimentally explored yet. Here, pseudo-magnetic fields reaching values of 100 T are shown to increase by more than an order of magnitude the relaxation lifetime of hot carriers in periodically strained graphene.

Substituent Effects in the Synthesis of Heterostructures

There have been a number of surprising reports of unexpected products when preparing heterostructures of Bi₂Se₃ with other 2D layers. These reports prompted us to explore the formation of metastable heterostructures containing Bi₂Se₃ using X-ray diffraction techniques to follow the reaction pathway. We discovered that the products formed depend on the electronic properties of the second constituent. Bi|Se layers deposited in a 2:3 ratio with enough atoms to make a single five-plane layer evolved to form thermodynamically stable Bi₂Se₃ as expected from the phase diagram. When the same Bi|Se layers were sequentially deposited with M|Se layers that form semiconductor layers (PbSe and 2H-MoSe₂), Bi₂Se₃-containing heterostructures formed. When the same Bi|Se layers were deposited with M|Se layers that form metallic layers (TiSe_2, VSe₂, and 1T-MoSe₂), BiSe-containing heterostructures formed. The amount of excess Se in the precursor controls whether [(Bi₂Se₃)_1+δ]₁[(MoSe₂)]₁ or [(BiSe)_1+γ]₁[(MoSe₂)]₁ forms. XPS data indicates that a mixture of both metallic 1T and semiconducting 2H-MoSe₂ is present in [(BiSe)_1+γ]₁[(MoSe₂)]₁, while only semiconducting 2H-MoSe₂ is present when layered with Bi₂Se₃. The electronic structure of adjacent layers impacts the formation of different structures from layers with similar local compositions. This provides an important additional parameter to consider when designing the synthesis of heterostructures, similar to substituent effects in molecular chemistry.

Axial Magnetoelectric Effect in Dirac Semimetals

We propose a mechanism to generate a static magnetization via the "axial magnetoelectric effect" (AMEE). Magnetization M∼E_{5}(ω)×E_{5}^{*}(ω) appears as a result of the transfer of the angular momentum of the axial electric field E_{5}(t) into the magnetic moment in Dirac and Weyl semimetals. We point out similarities and differences between the proposed AMEE and a conventional inverse Faraday effect. As an example, we estimated the AMEE generated by circularly polarized acoustic waves and find it to be on the scale of microgauss for gigahertz frequency sound. In contrast to a conventional inverse Faraday effect, magnetization rises linearly at small frequencies and fixed sound intensity as well as demonstrates a nonmonotonic peak behavior for the AMEE. The effect provides a way to investigate unusual axial electromagnetic fields via conventional magnetometry techniques.

Atomically Thin Quantum Spin Hall Insulators

Atomically thin topological materials are attracting growing attention for their potential to radically transform classical and quantum electronic device concepts. Among them is the quantum spin Hall (QSH) insulator-a 2D state of matter that arises from interplay of topological band inversion and strong spin-orbit coupling, with large tunable bulk bandgaps up to 800 meV and gapless, 1D edge states. Reviewing recent advances in materials science and engineering alongside theoretical description, the QSH materials library is surveyed with focus on the prospects for QSH-based device applications. In particular, theoretical predictions of nontrivial superconducting pairing in the QSH state toward Majorana-based topological quantum computing are discussed, which are the next frontier in QSH materials research.

Moiré Patterns in 2D Materials: A Review

Quantum materials have attracted much attention in recent years due to their exotic and incredible properties. Among them, van der Waals materials stand out due to their weak interlayer coupling, providing easy access to manipulating electrical and optical properties. Many fascinating electrical, optical, and magnetic properties have been reported in the moiré superlattices, such as unconventional superconductivity, photonic dispersion engineering, and ferromagnetism. In this review, we summarize the methods to prepare moiré superlattices in the van der Waals materials and focus on the current discoveries of moiré pattern-modified electrical properties, recent findings of atomic reconstruction, as well as some possible future directions in this field.

A van der Waals interface that creates in-plane polarization and a spontaneous photovoltaic effect

Van der Waals interfaces can be formed by layer stacking without regard to lattice constants or symmetries of individual building blocks. We engineered the symmetry of a van der Waals interface of tungsten selenide and black phosphorus and realized in-plane electronic polarization that led to the emergence of a spontaneous photovoltaic effect. Spontaneous photocurrent was observed along the polar direction and was absent in the direction perpendicular to it. The observed spontaneous photocurrent was explained by a quantum-mechanical shift current that reflects the geometrical and topological electronic nature of this emergent interface. The present results offer a simple guideline for symmetry engineering that is applicable to a variety of van der Waals interfaces.

Strain Relaxation in "2D/2D and 2D/3D Systems": Highly Textured Mica/Bi2Te3, Sb2Te3/Bi2Te3, and Bi2Te3/GeTe Heterostructures

Strain engineering as a method to control functional properties has seen in the last decades a surge of interest. Heterostructures comprising 2D-materials and containing van der Waals(-like) gaps were considered unsuitable for strain engineering. However, recent work on heterostructures based on Bi₂Te₃, Sb₂Te₃, and GeTe showed the potential of a different type of strain engineering due to long-range mutual straining. Still, a comprehensive understanding of the strain relaxation mechanism in these telluride heterostructures is lacking due to limitations of the earlier analyses performed. Here, we present a detailed study of strain in two-dimensional (2D/2D) and mixed dimensional (2D/3D) systems derived from mica/Bi₂Te₃, Sb₂Te₃/Bi₂Te₃, and Bi₂Te₃/GeTe heterostructures, respectively. We first clearly show the fast relaxation process in the mica/Bi₂Te₃ system where the strain was generally transferred and confined up to the second or third van der Waals block and then abruptly relaxed. Then we show, using three independent techniques, that the long-range exponentially decaying strain in GeTe and Sb₂Te₃ grown on the relaxed Bi₂Te₃ and Bi₂Te₃ on relaxed Sb₂Te₃ as directly observed at the growth surface is still present within these three different top layers a long time after growth. The observed behavior points at immediate strain relaxation by plastic deformation without any later relaxation and rules out an elastic (energy minimization) model as was proposed recently. Our work advances the understanding of strain tuning in textured heterostructures or superlattices governed by anisotropic bonding.

The Art of Constructing Black Phosphorus Nanosheet Based Heterostructures: From 2D to 3D

Assembling different kinds of 2D nanosheets into heterostructures presents a promising way of designing novel artificial materials with new and improved functionalities by combining the unique properties of each component. In the past few years, black phosphorus nanosheets (BPNSs) have been recognized as a highly feasible 2D material with outstanding electronic properties, a tunable bandgap, and strong in-plane anisotropy, highlighting their suitability as a material for constructing heterostructures. In this study, recent progress in the construction of BPNS-based heterostructures ranging from 2D hybrid structures to 3D networks is discussed, emphasizing the different types of interactions (covalent or noncovalent) between individual layers. The preparation methods, optical and electronic properties, and various applications of these heterostructures-including electronic and optoelectronic devices, energy storage devices, photocatalysis and electrocatalysis, and biological applications-are discussed. Finally, critical challenges and prospective research aspects in BPNS-based heterostructures are also highlighted.

Kinetics-Limited Two-Step Growth of van der Waals Puckered Honeycomb Sb Monolayer

Puckered honeycomb Sb monolayer, the structural analog of black phosphorene, has been recently successfully grown by means of molecular beam epitaxy. However, little is known to date about the growth mechanism for such a puckered honeycomb monolayer. In this study, by using scanning tunneling microscopy in combination with first-principles density functional theory calculations, we unveil that the puckered honeycomb Sb monolayer takes a kinetics-limited two-step growth mode. As the coverage of Sb increases, the Sb atoms first form the distorted hexagonal lattice as the half layer, and then the distorted hexagonal half-layer transforms into the puckered honeycomb lattice as the full layer. These results provide the atomic-scale insight in understanding the growth mechanism of puckered honeycomb monolayer and can be instructive to the direct growth of other monolayers with the same structure.

Kusmartsev F, Kusmartseva A, H. Alkallas F, AlFaify S, Shkir M. Raman Spectroscopy Imaging of Exceptional Electronic Properties in Epitaxial Graphene Grown on SiC

Graphene distinctive electronic and optical properties have sparked intense interest throughout the scientific community bringing innovation and progress to many sectors of academia and industry. Graphene manufacturing has rapidly evolved since its discovery in 2004. The diverse growth methods of graphene have many comparative advantages in terms of size, shape, quality and cost. Specifically, epitaxial graphene is thermally grown on a silicon carbide (SiC) substrate. This type of graphene is unique due to its coexistence with the SiC underneath which makes the process of transferring graphene layers for devices manufacturing simple and robust. Raman analysis is a sensitive technique extensively used to explore nanocarbon material properties. Indeed, this method has been widely used in graphene studies in fundamental research and application fields. We review the principal Raman scattering processes in SiC substrate and demonstrate epitaxial graphene growth. We have identified the Raman bands signature of graphene for different layers number. The method could be readily adopted to characterize structural and exceptional electrical properties for various epitaxial graphene systems. Particularly, the variation of the charge carrier concentration in epitaxial graphene of different shapes and layers number have been precisely imaged. By comparing the intensity ratio of 2D line and G line-"I2D/IG"-the density of charge across the graphene layers could be monitored. The obtained results were compared to previous electrical measurements. The substrate longitudinal optical phonon coupling "LOOPC" modes have also been examined for several epitaxial graphene layers. The LOOPC of the SiC substrate shows a precise map of the density of charge in epitaxial graphene systems for different graphene layers number. Correlations between the density of charge and particular graphene layer shape such as bubbles have been determined. All experimental probes show a high degree of consistency and efficiency. Our combined studies have revealed novel capacitor effect in diverse epitaxial graphene system. The SiC substrate self-compensates the graphene layer charge without any external doping. We have observed a new density of charge at the graphene-substrate interface. The located capacitor effects at epitaxial graphene-substrate interfaces give rise to an unexpected mini gap in graphene band structure.

Room-Temperature Colossal Magnetoresistance in Terraced Single-Layer Graphene

Disorder-induced magnetoresistance (MR) effect is quadratic at low perpendicular magnetic fields and linear at high fields. This effect is technologically appealing, especially in 2D materials such as graphene, since it offers potential applications in magnetic sensors with nanoscale spatial resolution. However, it is a great challenge to realize a graphene magnetic sensor based on this effect because of the difficulty in controlling the spatial distribution of disorder and enhancing the MR sensitivity in the single-layer regime. Here, a room-temperature colossal MR of up to 5000% at 9 T is reported in terraced single-layer graphene. By laminating single-layer graphene on a terraced substrate, such as TiO₂ -terminated SrTiO₃ , a universal one order of magnitude enhancement in the MR compared to conventional single-layer graphene devices is demonstrated. Strikingly, a colossal MR of >1000% is also achieved in the terraced graphene even at a high carrier density of ≈10¹² cm^-2 . Systematic studies of the MR of single-layer graphene on various oxide- and non-oxide-based terraced surfaces demonstrate that the terraced structure is the dominant factor driving the MR enhancement. The results open a new route for tailoring the physical property of 2D materials by engineering the strain through a terraced substrate.

Thermal History-Dependent Current Relaxation in hBN/MoS2 van der Waals Dimers

Combining atomically thin layers of van der Waals (vdW) materials in a chosen vertical sequence is an emerging route to create devices with desired functionalities. While this method aims to exploit the individual properties of partnering layers, strong interlayer coupling can significantly alter their electronic and optical properties. Here we explored the impact of the vdW epitaxy on electrical transport in atomically thin molybdenum disulfide (MoS₂) when it forms a vdW dimer with crystalline films of hexagonal boron nitride (hBN). We observe a thermal history-dependent long-term (over ∼40 h) current relaxation in the overlap region of MoS₂/hBN heterostructures, which is absent in bare MoS₂ layers (or homoepitaxial MoS₂/MoS₂ dimers) on the same substrate. Concurrent relaxation in the low-frequency Raman modes in MoS₂ in the heterostructure region suggests a slow structural relaxation between trigonal and octahedral polymorphs of MoS₂ as a likely driving mechanism that also results in inhomogeneous charge distribution in the MoS₂ layer. Our experiment yields an aspect of vdW heteroepitaxy that can be generic to electrical devices with atomically thin transition-metal dichalcogenides.

Strain Modulated Superlattices in Graphene

Numerous theoretically proposed devices and novel phenomena have sought to take advantage of the intense pseudogauge fields that can arise in strained graphene. Many of these proposals, however, require fields to oscillate with a spatial frequency smaller than the magnetic length, while to date only the generation and effects of fields varying at a much larger length scale have been reported. Here, we describe the creation of short wavelength, periodic pseudogauge-fields using rippled graphene under extreme (>10%) strain and study of its effects on Dirac electrons. Combining scanning tunneling microscopy and atomistic calculations, we find that spatially oscillating strain generates a new quantization different from the familiar Landau quantization. Graphene ripples also cause large variations in carbon-carbon bond length, creating an effective electronic superlattice within a single graphene sheet. Our results thus also establish a novel approach of synthesizing effective 2D lateral heterostructures by periodically modulating lattice strain.

Coexistence of Van Hove singularities and pseudomagnetic fields in modulated graphene bilayer

The stacking and bending of graphene are trivial but extremely powerful agents of control over graphene's manifold physics. By changing the twist angle, one can drive the system over a plethora of exotic states via strong electron correlation, thanks to the moiré superlattice potentials, while the periodic or triaxial strains induce discretization of the band structure into Landau levels without the need for an external magnetic field. We fabricated a hybrid system comprising both the stacking and bending tuning knobs. We have grown the graphene monolayers by chemical vapor deposition, using ¹²C and ¹³C precursors, which enabled us to individually address the layers through Raman spectroscopy mapping. We achieved the long-range spatial modulation by sculpturing the top layer (¹³C) over uniform magnetic nanoparticles (NPs) deposited on the bottom layer (¹²C). An atomic force microscopy study revealed that the top layer tends to relax into pyramidal corrugations with C₃ axial symmetry at the position of the NPs, which have been widely reported as a source of large pseudomagnetic fields (PMFs) in graphene monolayers. The modulated graphene bilayer (MGBL) also contains a few micrometer large domains, with the twist angle ∼10°, which were identified via extreme enhancement of the Raman intensity of the G-mode due to formation of van Hove singularities (VHSs). We thereby conclude that the twist-induced VHSs coexist with the PMFs generated in the strained pyramidal objects without mutual disturbance. The graphene bilayer modulated with magnetic NPs is a non-trivial hybrid system that accommodates features of twist-induced VHSs and PMFs in environs of giant classical spins.

Ultratough graphene-black phosphorus films

Graphene-based films with high toughness have many promising applications, especially for flexible energy storage and portable electrical devices. Achieving such high-toughness films, however, remains a challenge. The conventional mechanisms for improving toughness are crack arrest or plastic deformation. Herein we demonstrate black phosphorus (BP) functionalized graphene films with record toughness by combining crack arrest and plastic deformation. The formation of covalent bonding P-O-C between BP and graphene oxide (GO) nanosheets not only reduces the voids of GO film but also improves the alignment degree of GO nanosheets, resulting in high compactness of the GO film. After further chemical reduction and π-π stacking interactions by conjugated molecules, the alignment degree of rGO nanosheets was further improved, and the voids in lamellar graphene film were also further reduced. Then, the compactness of the resultant graphene films and the alignment degree of reduced graphene oxide nanosheets are further improved. The toughness of the graphene film reaches as high as ∼51.8 MJ m^-3, the highest recorded to date. In situ Raman spectra and molecular dynamics simulations reveal that the record toughness is due to synergistic interactions of lubrication of BP nanosheets, P-O-C covalent bonding, and π-π stacking interactions in the resultant graphene films. Our tough black phosphorus functionalized graphene films with high tensile strength and excellent conductivity also exhibit high ambient stability and electromagnetic shielding performance. Furthermore, a supercapacitor based on the tough films demonstrated high performance and remarkable flexibility.

Valley Polarization and Inversion in Strained Graphene via Pseudo-Landau Levels, Valley Splitting of Real Landau Levels, and Confined States

It is quite easy to control spin polarization and the spin direction of a system via magnetic fields. However, there is no such direct and efficient way to manipulate the valley pseudospin degree of freedom. Here, we demonstrate experimentally that it is possible to realize valley polarization and valley inversion in graphene by using both strain-induced pseudomagnetic fields and real magnetic fields. Pseudomagnetic fields, which are quite different from real magnetic fields, point in opposite directions at the two distinct valleys of graphene. Therefore, the coexistence of pseudomagnetic fields and real magnetic fields leads to imbalanced effective magnetic fields at two distinct valleys of graphene. This allows us to control the valley in graphene as conveniently as the electron spin. In this work, we report a consistent observation of valley polarization and inversion in strained graphene via pseudo-Landau levels, splitting of real Landau levels, and valley splitting of confined states using scanning tunneling spectroscopy. Our results highlight a pathway to valleytronics in strained graphene-based platforms.

Large-area, periodic, and tunable intrinsic pseudo-magnetic fields in low-angle twisted bilayer graphene

A properly strained graphene monolayer or bilayer is expected to harbour periodic pseudo-magnetic fields with high symmetry, yet to date, a convincing demonstration of such pseudo-magnetic fields has been lacking, especially for bilayer graphene. Here, we report a definitive experimental proof for the existence of large-area, periodic pseudo-magnetic fields, as manifested by vortex lattices in commensurability with the moiré patterns of low-angle twisted bilayer graphene. The pseudo-magnetic fields are strong enough to confine the massive Dirac electrons into circularly localized pseudo-Landau levels, as observed by scanning tunneling microscopy/spectroscopy, and also corroborated by tight-binding calculations. We further demonstrate that the geometry, amplitude, and periodicity of the pseudo-magnetic fields can be fine-tuned by both the rotation angle and heterostrain. Collectively, the present study substantially enriches twisted bilayer graphene as a powerful enabling platform for exploration of new and exotic physical phenomena, including quantum valley Hall effects and quantum anomalous Hall effects.