Flexo-photovoltaic effect in MoS2

Ionic Photovoltaics-in-Memory in van der Waals Material

The photovoltaic effect is gaining growing attention in the optoelectronics field due to its low power consumption, sustainable nature, and high efficiency. However, the photovoltaic effects hitherto reported are hindered by the stringent band-alignment requirement or inversion symmetry-breaking, and are challenging for achieving multifunctional photovoltaic properties (such as reconfiguration, nonvolatility, and so on). Here, a novel ionic photovoltaic effect in centrosymmetric CdSb2Se3Br2 that can overcome these limitations is demonstrated. The photovoltaic effect displays significant anisotropy, with the photocurrent being most apparent along the CdBr2 chains while absent perpendicular to them. Additionally, the device shows electrically-induced nonvolatile photocurrent switching characteristics. The photovoltaic effect is attributed to the modulation of the built-in electric field through the migration of Br ions. Using these unique photovoltaic properties, a highly secure circuit with electrical and optical keys is successfully implemented. The findings not only broaden the understanding of the photovoltaic mechanism, but also provide a new material platform for the development of in-memory sensing and computing devices.

Mixed-Dimensional Integration of 3D-on-2D Heterostructures for Advanced Electronics

Two-dimensional (2D) materials have garnered significant attention due to their exceptional properties requisite for next-generation electronics, including ultrahigh carrier mobility, superior mechanical flexibility, and unusual optical characteristics. Despite their great potential, one of the major technical difficulties toward lab-to-fab transition exists in the seamless integration of 2D materials with classic material systems, typically composed of three-dimensional (3D) materials. Owing to the self-passivated nature of 2D surfaces, it is particularly challenging to achieve well-defined interfaces when forming 3D materials on 2D materials (3D-on-2D) heterostructures. Here, we comprehensively review recent progress in 3D-on-2D incorporation strategies, ranging from direct-growth- to layer-transfer-based approaches and from non-epitaxial to epitaxial integration methods. Their technological advances and obstacles are rigorously discussed to explore optimal, yet viable, integration strategies of 3D-on-2D heterostructures. We conclude with an outlook on mixed-dimensional integration processes, identifying key challenges in state-of-the-art technology and suggesting potential opportunities for future innovation.

Electrically Controlled High Sensitivity Strain Modulation in MoS2 Field-Effect Transistors via a Piezoelectric Thin Film on Silicon Substrates

Strain can modulate bandgap and carrier mobilities in two-dimensional (2D) materials. Conventional strain-application methodologies relying on flexible/patterned/nanoindented substrates are limited by low thermal tolerance, poor tunability, and/or scalability. Here, we leverage the converse piezoelectric effect to electrically generate and control strain transfer from a piezoelectric thin film to electromechanically coupled 2D MoS2. Electrical bias polarity change across the piezo film tunes the nature of strain transferred to MoS2 from compressive (∼0.23%) to tensile (∼0.14%) as verified through Raman and photoluminescence spectroscopies and substantiated by density functional theory calculations. The device architecture, on silicon substrate, integrates an MoS2 field-effect transistor on a metal-piezoelectric-metal stack enabling strain modulation of transistor drain current (130×), on/off ratio (150×), and mobility (1.19×) with high precision, reversibility, and resolution. Large, tunable tensile (1056) and compressive (-1498) strain gauge factors, electrical strain modulation, and high thermal tolerance promise facile integration with silicon-based CMOS and micro-electromechanical systems.

Surface photogalvanic effect in Ag2Te

The bulk photovoltaic effect (BPVE) in non-centrosymmetric materials has attracted significant attention in recent years due to its potential to surpass the Shockley-Queisser limit. Although these materials are strictly constrained by symmetry, progress has been made in artificially reducing symmetry to stimulate BPVE in wider systems. However, the complexity of these techniques has hindered their practical implementation. In this study, we demonstrate a large intrinsic photocurrent response in centrosymmetric topological insulator Ag2Te, attributed to the surface photogalvanic effect (SPGE), which is induced by symmetry reduction of the surface. Through diverse spatially-resolved measurements on specially designed devices, we directly observe that SPGE in Ag2Te arises from the difference between two opposite photocurrent flows generated from the top and bottom surfaces. Acting as an efficient SPGE material, Ag2Te demonstrates robust performance across a wide spectral range from visible to mid-infrared, making it promising for applications in solar cells and mid-infrared detectors. More importantly, SPGE generated on low-symmetric surfaces can potentially be found in various systems, thereby inspiring a broader range of choices for photovoltaic materials.

Enhanced Electromechanical Response Due to Inhomogeneous Strain in Monolayer MoS2

2D transition metal dichalcogenides (TMDs) exhibit exceptional resilience to mechanical deformation. Applied strain can have pronounced effects on properties such as the bandgaps and exciton dynamics of TMDs, via deformation potentials and electromechanical coupling. In this work, we use piezoresponse force microscopy to show that the inhomogeneous strain from nanobubbles produces dramatic, localized enhancements of the electromechanical response of monolayer MoS2. Nanobubbles with diameters under 100 nm consistently produce an increased piezoresponse that follows the features' topography, while larger bubbles exhibit a halo-like profile, with maximum piezoresponse near the periphery. We show that spatial filtering enables these effects to be eliminated in the quantitative determination of effective piezoelectric or flexoelectric coefficients. Numerical strain modeling reveals a correlation between the hydrostatic strain gradient and the effective piezoelectric coefficient in large MoS2 nanobubbles, suggesting a localized variation in electromechanical coupling due to symmetry reduction induced by inhomogeneous strain.

Novel two-dimensional HfSi2N4 monolayer with excellent bandgap modulation and electronic properties modulation

The bandgap modulation and electronic properties modulation of two-dimensional HfSi2N4 monolayer induced by strain, electric field and atomic adsorption are studied by first principles. The HfSi2N4 monolayer was found to be dynamically, thermally, and mechanically stable at equilibrium, and it is a direct semiconductor with a bandgap of 1.87 eV. The bandgap of the HfSi2N4 monolayer can be precisely modulated by strain. Under the action of strain, HfSi2N4 monolayer not only transforms from direct semiconductor to indirect semiconductor, but also improves the absorption of visible light. An external electric field in the 0-0.5 eV/Å range can also modulate the bandgap of HfSi2N4 monolayer from 1.87 eV to 0 eV, and most importantly, at an external electric field of 0.5 eV/Å, HfSi2N4 monolayer shows the characteristics of spin gapless semiconductor. The calculated adsorption energy shows that the structures of H, O and F atoms adsorbed by HfSi2N4 monolayer can all exist stably. The bandgap of the configuration after adsorption of O and F atoms is significantly reduced compared with that of HfSi2N4 monolayer. Furthermore, the HfSi2N4 monolayer after adsorption of H and F atoms is transformed into a magnetic semiconductor. METHOD: All calculations were performed using Vienna ab initial simulation package, The electronic structure, mechanical properties, electronic properties and other properties were carried out using generalized gradient approximation (GGA-PBE), supplemented by HSE06 and GGA + U. The total-energy and force convergence are less than 10-6 eV and 0.001 eV/Å, respectively. The vacuum on the z-axis is selected 20 Å. The vdW interactions were corrected using the Grimme scheme (DFT-D3).

Advancing Nanoelectronics Applications: Progress in Non-van der Waals 2D Materials

Extending the inventory of two-dimensional (2D) materials remains highly desirable, given their excellent properties and wide applications. Current studies on 2D materials mainly focus on the van der Waals (vdW) materials since the discovery of graphene, where properties of atomically thin layers have been found to be distinct from their bulk counterparts. Beyond vdW materials, there are abundant non-vdW materials that can also be thinned down to 2D forms, which are still in their early stage of exploration. In this review, we focus on the downscaling of non-vdW materials into 2D forms to enrich the 2D materials family. This underexplored group of 2D materials could show potential promise in many areas such as electronics, optics, and magnetics, as has happened in the vdW 2D materials. Hereby, we will focus our discussion on their electronic properties and applications of them. We aim to motivate and inspire fellow researchers in the 2D materials community to contribute to the development of 2D materials beyond the widely studied vdW layered materials for electronic device applications. We also give our insights into the challenges and opportunities to guide researchers who are desirous of working in this promising research area.

Dual polarization-enabled ultrafast bulk photovoltaic response in van der Waals heterostructures

The bulk photovoltaic effect (BPVE) originating from spontaneous charge polarizations can reach high conversion efficiency exceeding the Shockley-Queisser limit. Emerging van der Waals (vdW) heterostructures provide the ideal platform for BPVE due to interfacial interactions naturally breaking the crystal symmetries of the individual constituents and thus inducing charge polarizations. Here, we show an approach to obtain ultrafast BPVE by taking advantage of dual interfacial polarizations in vdW heterostructures. While the in-plane polarization gives rise to the BPVE in the overlayer, the charge carrier transfer assisted by the out-of-plane polarization further accelerates the interlayer electronic transport and enhances the BPVE. We illustrate the concept in MoS2/black phosphorus heterostructures, where the experimentally observed intrinsic BPVE response time achieves 26 ps, orders of magnitude faster than that of conventional non-centrosymmetric materials. Moreover, the heterostructure device possesses an extrinsic response time of approximately 2.2 ns and a bulk photovoltaic coefficient of 0.6 V-1, which is among the highest values for vdW BPV devices reported so far. Our study thus points to an effective way of designing ultrafast BPVE for high-speed photodetection.

Enormous and Tunable Bulk Charge/Spin Photovoltaic Effect in Piezoelectric Binary Materials T-IV-VI and T-V-V

Understanding the nonlinear response of light and materials is crucial for fundamental physics and next-generation electronic devices. In this work, we have investigated the second-order nonlinear bulk photovoltaic (BPV) and bulk spin photovoltaic (BSPV) effects in the piezoelectric binary materials T-IV-VI and T-V-V (IV = Ge, Sn; VI = S, Se; and V = P, As, Sb, Bi). The independent nonzero conductivity tensors of charge current are derived for these binaries through the symmetry analysis, along with the mechanism for generating pure spin current. These binaries, with their unique folded structure, exhibit significant charge and spin currents under illumination. Furthermore, we find that strain engineering can effectively modulate charge/spin currents by influencing charge density distribution and built-in electric field due to the piezoelectric effect. Our research suggests that the piezoelectric binary materials possess enormous and tunable charge/spin currents, underscoring their potential for applications in nonlinear flexible optoelectronics and spintronics.

Flexoelectric Engineering of Bulk Photovoltaic Photodetector

The bulk photovoltaic effect (BPVE) offers an interesting approach to generate a steady photocurrent in a single-phase material under homogeneous illumination, and it has been extensively investigated in ferroelectrics exhibiting spontaneous polarization that breaks inversion symmetry. Flexoelectricity breaks inversion symmetry via a strain gradient in the otherwise nonpolar materials, enabling manipulation of ferroelectric order without an electric field. Combining these two effects, we demonstrate active mechanical control of BPVE in suspended 2-dimensional CuInP2S6 (CIPS) that is ferroelectric yet sensitive to electric field, which enables practical photodetection with an order of magnitude enhancement in performance. The suspended CIPS exhibits a 20-fold increase in photocurrent, which can be continuously modulated by either mechanical force or light polarization. The flexoelectrically engineered photodetection device, activated by air pressure and without any optimization, possesses a responsivity of 2.45 × 10-2 A/W and a detectivity of 1.73 × 1011 jones, which are superior to those of ferroelectric-based photodetection and comparable to those of the commercial Si photodiode.

Strain-Prompted Giant Flexo-Photovoltaic Effect in Two-Dimensional Violet Phosphorene Nanosheets

As a second-order nonlinear optical phenomenon, the bulk photovoltaic (BPV) effect is expected to break through the Shockley-Queisser limit of thermodynamic photoelectron conversion and improve the energy conversion efficiency of photovoltaic cells. Here, we have successfully induced a strong flexo-photovoltaic (FPV) effect, a form of BPV effect, in strained violet phosphorene nanosheets (VPNS) by utilizing strain engineering at the h-BN nanoedge, which was first observed in nontransition metal dichalcogenide (TMD) systems. This BPV effect was found to originate from the disruption of inversion symmetry induced by uniaxial strain applied to VPNS at the h-BN nanoedge. We have revealed the intricate relationship between the bulk photovoltaic effect and strain gradients in VPNS through thickness-dependent photovoltaic response experiments. A bulk photovoltaic coefficient of up to 1.3 × 10-3 V-1 and a polarization extinction ratio of 21.6 have been achieved by systematically optimizing the height of the h-BN nanoedge and the thickness of VPNS, surpassing those of reported TMD materials (typically less than 3). Our results have revealed the fundamental relationship between the FPV effect and the strain gradients in low-dimensional materials and inspired further exploration of optoelectronic phenomena in strain-gradient engineered materials.

Giant In-Plane Flexoelectricity and Radial Polarization in Janus IV-VI Monolayers and Nanotubes

Nanotubes have established a new paradigm in nanoscience because of their atomically thin geometries and intriguing properties. However, because of their typical metastability compared to their 2D and 3D counterparts, it is still fundamentally challenging to synthesize nanotubes with controlled size. New strategies have been suggested for synthesizing nanotubes with a controlled geometry. One of these is considering Janus 2D layers, which can self-roll to form a nanotube. Herein, we study 412 nanotubes (along the armchair and zigzag directions) based on 36 Janus IV-VI compounds using density functional theory (DFT) calculations. By investigating the energy-radius relationship using structural models and Bayesian predictions, the most stable nanotubes show negative strain energies and radii below 20 Å, where curvature effects can play a significant role. The band structures show that the selected nanotubes exhibit sizable band gaps and size-dependent electronic properties. More strikingly, the flexoelectricity along the in-plane directions and radial directions in these nanotubes is significantly larger than that in other nanotubes and their 2D counterparts. This work opens up an avenue of structure-property relationships of Janus IV-VI nanotubes and demonstrates giant flexoelectricity in these nanotubes for future electronic and energy applications.

Piezo-photovoltaic Effect in Monolayer 2H-MoS2

Noncentrosymmetric bulk materials effectively convert light energy into electricity by making use of the bulk photovoltaic effect (BPVE). However, whether such an effect persists when reducing the thickness of materials down to atomic-scale remains to be revealed. Here, we show the piezo-photovoltaic effect in atomically thin two-dimensional materials, where the strain-induced polarization can generate photovoltaic outputs in the noncentrosymmetric mono- and few-layer 2H-MoS2 crystals. The photocurrent is enhanced by orders of magnitude when the MoS2 crystals experience an in-plane strain of about 0.2%, with photopower-dependent responsivity up to 0.1 A/W that rivals other state-of-the-art BPVE materials. In addition, studies on the spatial distributions of photocurrents on MoS2 with a controlled number of layers also allow us to disentangle various factors that couple the piezoelectricity and photovoltaics. Therefore, our results also provide insights into the mechanisms of the piezo-photovoltaic effect in two-dimensional materials with thicknesses at the atomic-scale limit.

Revealing Strong Flexoelectricity and Optoelectronic Coupling in 2D Ferroelectric CuInP2S6 Via Large Strain Gradient

The interplay between flexoelectric and optoelectronic characteristics provides a paradigm for studying emerging phenomena in various 2D materials. However, an effective way to induce a large and tunable strain gradient in 2D devices remains to be exploited. Herein, we propose a strategy to induce large flexoelectric effect in 2D ferroelectric CuInP2S6 by constructing a 1D-2D mixed-dimensional heterostructure. The strong flexoelectric effect is induced by enormous strain gradient up to 4.2 × 106 m-1 resulting from the underlying ZnO nanowires, which is further confirmed by the asymmetric coercive field and the red-shift in the absorption edge. The induced flexoelectric polarization efficiently boosts the self-powered photodetection performance. In addition, the improved photoresponse has a good correlation with the induced strain gradient, showing a consistent size-dependent flexoelectric effect. The mechanism of flexoelectric and optoelectronic coupling is proposed based on the Landau-Ginzburg-Devonshire double-well model, supported by density functional theory (DFT) calculations. This work provides a brand-new method to induce a strong flexoelectric effect in 2D materials, which is not restricted to crystal symmetry and thus offers unprecedented opportunities for state-of-the-art 2D devices.

Enhanced Piezoelectric Response at Nanoscale Vortex Structures in Ferroelectrics

The piezoelectric response is a measure of the sensitivity of a material's polarization to stress or its strain to an applied field. Using in operando X-ray Bragg coherent diffraction imaging, we observe that topological vortices are the source of a 5-fold enhancement of the piezoelectric response near the vortex core. The vortices form where several low-symmetry ferroelectric phases and phase boundaries coalesce. Unlike bulk ferroelectric solid solutions in which a large piezoelectric response is associated with coexisting phases in the proximity of the triple point, the largest responses for pure BaTiO3 at the nanoscale are in spatial regions of extremely small spontaneous polarization at vortex cores. The response decays inversely with polarization away from the vortex, analogous to the behavior in bulk ceramics as the cation compositions are varied away from the triple point. We use first-principles-based molecular dynamics to augment our observations, and our results suggest that nanoscale piezoelectric materials with a large piezoelectric response can be designed within a parameter space governed by vortex cores. Our findings have implications for the development of next-generation nanoscale piezoelectric materials.

A giant intrinsic photovoltaic effect in atomically thin ReS2

The photovoltaic (PV) effect in non-centrosymmetric materials consisting of a single component under homogeneous illumination can exceed the fundamental Shockley-Queisser limit compared to the traditional p-n junctions. Two-dimensional (2D) materials with a reduced dimensionality and smaller bandgap were predicated to be better candidates for the PV effect with high efficiency exceeding that of traditional ferroelectric perovskite oxides. Here, we report the giant intrinsic PV effect in atomically thin rhenium disulfide (ReS2) with centrosymmetry breaking. In graphene/ReS2/graphene sandwich structures, significant short-circuit currents (Isc) were observed with illumination over the visible spectral range, presenting the highest responsivity (110 mA W-1) and external quantum efficiency (25.7%) among those reported PV effects in 2D materials. This giant PV effect could be ascribed to the spontaneous-polarization induced depolarization field in even-number-layered ReS2 flakes benefiting from the distorted 1T lattice structure. Our results provide a new potential candidate material for the development of novel high-efficiency, miniaturized and easily integrated photodetectors and solar cells.

Giant intrinsic photovoltaic effect in one-dimensional van der Waals grain boundaries

The photovoltaic effect lies at the heart of eco-friendly energy harvesting. However, the conversion efficiency of traditional photovoltaic effect utilizing the built-in electric effect in p-n junctions is restricted by the Shockley-Queisser limit. Alternatively, intrinsic/bulk photovoltaic effect (IPVE/BPVE), a second-order nonlinear optoelectronic effect arising from the broken inversion symmetry of crystalline structure, can overcome this theoretical limit. Here, we uncover giant and robust IPVE in one-dimensional (1D) van der Waals (vdW) grain boundaries (GBs) in a layered semiconductor, ReS2. The IPVE-induced photocurrent densities in vdW GBs are among the highest reported values compared with all kinds of material platforms. Furthermore, the IPVE-induced photocurrent is gate-tunable with a polarization-independent component along the GBs, which is preferred for energy harvesting. The observed IPVE in vdW GBs demonstrates a promising mechanism for emerging optoelectronics applications.

Giant Flexoelectricity in Bent Semiconductor Thinfilm

We elucidate the flexoelectricity of semiconductors in the high strain gradient regime, the underlying mechanism of which is less understood. By using the generalized Bloch theorem, we uncover a strong flexoelectric-like effect in bent thinfilms of Si and Ge due to a high-strain-gradient-induced band gap closure. We show that an unusual type-II band alignment is formed between the compressed and elongated sides of the bent film. Therefore, upon the band gap closure, electrons transfer from the compressed side to the elongated side to reach the thermodynamic equilibrium, leading to a pronounced change of polarization along the film thickness dimension. The obtained transverse flexoelectric coefficients are unexpectedly high with a quadratic dependence on the film thickness. This new mechanism is extendable to other semiconductor materials with moderate energy gaps. Our findings have important implications for the future applications of flexoelectricity in semiconductor materials.

Disorder-induced bulk photovoltaic effect in a centrosymmetric van der Waals material

Sunlight is widely seen as one of the most abundant forms of renewable energy, with photovoltaic cells based on pn junctions being the most commonly used platform attempting to harness it. Unlike in conventional photovoltaic cells, the bulk photovoltaic effect (BPVE) allows for the generation of photocurrent and photovoltage in a single material without the need to engineer a pn junction and create a built-in electric field, thus offering a solution that can potentially exceed the Shockley-Queisser efficiency limit. However, it requires a material with no inversion symmetry and is therefore absent in centrosymmetric materials. Here, we demonstrate that breaking the inversion symmetry by structural disorder can induce BPVE in ultrathin PtSe2, a centrosymmetric semiconducting van der Waals material. Homogenous illumination of defective PtSe2 by linearly and circularly polarized light results in a photoresponse termed as linear photogalvanic effect (LPGE) and circular photogalvanic effect (CPGE), which is mostly absent in the pristine crystal. First-principles calculations reveal that LPGE originates from Se vacancies that act as asymmetric scattering centers for the photo-generated electron-hole pairs. Our work emphasizes the importance of defects to induce photovoltaic functionality in centrosymmetric materials and shows how the range of materials suitable for light sensing and energy-harvesting applications can be extended.

Research Progress in Composite Materials for Photocatalytic Nitrogen Fixation

Ammonia is an essential component of modern chemical products and the building unit of natural life molecules. The Haber-Bosch (H-B) process is mainly used in the ammonia synthesis process in the industry. In this process, nitrogen and hydrogen react to produce ammonia with metal catalysts under high temperatures and pressure. However, the H-B process consumes a lot of energy and simultaneously emits greenhouse gases. In the "double carbon" effect, to promote the combination of photocatalytic technology and artificial nitrogen fixation, the development of green synthetic reactions has been widely discussed. Using an inexhaustible supply of sunlight as a power source, researchers have used photocatalysts to reduce nitrogen to ammonia, which is energy-dense and easy to store and transport. This process completes the conversion from light energy to chemical energy. At the same time, it achieves zero carbon emissions, reducing energy consumption and environmental pollution in industrial ammonia synthesis from the source. The application of photocatalytic technology in the nitrogen cycle has become one of the research hotspots in the new energy field. This article provides a classification of and an introduction to nitrogen-fixing photocatalysts reported in recent years and prospects the future development trends in this field.

Chirality dependent electromechanical properties of single-layer MoS2 under out-of-plane deformation: a DFT study

2D transition metal dichalcogenides (TMDs) demonstrate significant promise in logic circuits and optoelectronic devices because of their unique structures and excellent semiconductor properties. However, they inevitably undergo out-of-plane deformation during practical applications due to their ultra-thin structures. Recent experiments have shown that out-of-plane deformation significantly affects the electronic structures of 2D TMDs. However, the underlying physical mechanism is largely unknown. Therefore, it is critical to have a deeper understanding of out-of-plane deformation in 2D TMDs to optimize their applications in different fields. Currently, one of the most pressing matters that requires clarification is the chirality dependence of out-of-plane deformation in tuning the electromechanical properties of 2D TMDs. In this work, using single-layer MoS2 as a probe, we systematically investigate the effects of out-of-plane deformation along different chirality directions on the bond length, bending stiffness, electric polarization, and band structure of 2D TMDs by employing first-principles calculations based on density functional theory. Our results indicate that the bond length, bending energy, polarization strength, and band gap size of single-layer MoS2 are isotropic under out-of-plane deformation, while the band gap type is closely related to the direction of deformation. Our study will provide an essential theoretical basis for further revealing the structure-performance relationship of 2D TMDs.

Building Low-Cost, High-Performance Flexible Photodetector Based on Tetragonal Phase VO2 (A) Nanorod Networks

We present a straightforward and cost-effective method for the fabrication of flexible photodetectors, utilizing tetragonal phase VO2 (A) nanorod (NR) networks. The devices exhibit exceptional photosensitivity, reproducibility, and stability in ambient conditions. With a 2.0 V bias voltage, the device demonstrates a photocurrent switching gain of 1982% and 282% under irradiation with light at wavelengths of 532 nm and 980 nm, respectively. The devices show a fast photoelectric response with rise times of 1.8 s and 1.9 s and decay times of 1.2 s and 1.7 s for light at wavelengths of 532 nm and 980 nm, respectively. In addition, the device demonstrates exceptional flexibility across large-angle bending and maintains excellent mechanical stability, even after undergoing numerous extreme bending cycles. We discuss the electron transport process within the nanorod networks, and propose a mechanism for the modulation of the barrier height induced by light. These characteristics reveal that the fabricated devices hold the potential to serve as a high-performance flexible photodetector.

Bulk Photovoltaic Effect in Two-Dimensional Distorted MoTe2

In future solar cell technologies, the thermodynamic Shockley-Queisser limit for solar-to-current conversion in traditional p-n junctions could potentially be overcome with a bulk photovoltaic effect by creating an inversion broken symmetry in piezoelectric or ferroelectric materials. Here, we unveiled mechanical distortion-induced bulk photovoltaic behavior in a two-dimensional (2D) material, MoTe2, caused by the phase transition and broken inversion symmetry in MoTe2. The phase transition from single-crystalline semiconducting 2H-MoTe2 to semimetallic 1T'-MoTe2 was confirmed using X-ray photoelectron spectroscopy (XPS). We used a micrometer-scale system to measure the absorption of energy, which reduced from 800 to 63 meV during phase transformation from hexagonal to distorted octahedral and revealed a smaller bandgap semimetallic behavior. Experimentally, a large bulk photovoltaic response is anticipated with the maximum photovoltage VOC = 16 mV and a positive signal of the ISC = 60 μA (400 nm, 90.4 Wcm-2) in the absence of an external electric field. The maximum values of both R and EQE were found to be 98 mAW-1 and 30%, respectively. Our findings are distinctive features of the photocurrent responses caused by in-plane polarity and its potential from a wide pool of established TMD-based nanomaterials and a cutting-edge approach to optimize the efficiency in converting photons-to-electricity for power harvesting optoelectronics devices.

Ultralow Tip-Force Driven Sizable-Area Domain Manipulation through Transverse Flexoelectricity

Deterministic control of ferroelectric domain is critical in the ferroelectric functional electronics. Ferroelectric polarization can be manipulated mechanically with a nano-tip through flexoelectricity. However, it usually occurs in a very localized area in ultrathin films, with possible permanent surface damage caused by a large tip-force. Here it is demonstrated that the deliberate engineering of transverse flexoelectricity offers a powerful tool for improving the mechanical domain switching. Sizable-area domain switching under an ultralow tip-force can be realized in suspended van der Waals ferroelectrics with the surface intact, due to the enhanced transverse flexoelectric field. The film thickness range for domain switching in suspended ferroelectrics is significantly improved by an order of magnitude to hundreds of nanometers, being far beyond the limited range of the substrate-supported ones. The experimental results and phase-field simulations further reveal the crucial role of the transverse flexoelectricity in the domain manipulation. This large-scale mechanical manipulation of ferroelectric domain provides opportunities for the flexoelectricity-based domain controls in emerging low-dimensional ferroelectrics and related devices.

Strong bulk photovoltaic effect in engineered edge-embedded van der Waals structures

Bulk photovoltaic effect (BPVE), a second-order nonlinear optical effect governed by the quantum geometric properties of materials, offers a promising approach to overcome the Shockley-Quiesser limit of traditional photovoltaic effect and further improve the efficiency of energy harvesting. Here, we propose an effective platform, the nano edges embedded in assembled van der Waals (vdW) homo- or hetero-structures with strong symmetry breaking, low dimensionality and abundant species, for BPVE investigations. The BPVE-induced photocurrents strongly depend on the orientation of edge-embedded structures and polarization of incident light. Reversed photocurrent polarity can be observed at left and right edge-embedded structures. Our work not only visualizes the unique optoelectronic effect in vdW nano edges, but also provides an effective strategy for achieving BPVE in engineered vdW structures.

Giant Bulk Electrophotovoltaic Effect in Heteronodal-Line Systems

The realization of a giant and continuously tunable second-order photocurrent is desired for many nonlinear optical (NLO) and optoelectronic applications, which remains a great challenge. Here, based on a two-band model, we propose a concept of the bulk electrophotovoltaic effect, that is, an out-of-plane external electric field (E_{ext}) that can continuously tune in-plane shift current along with its sign flip in a heteronodal-line (HNL) system. While strong linear optical transition around the nodal loop may potentially generate giant shift current, an E_{ext} can effectively control the radius of the nodal loop, which can continuously modulate the shift-vector components inside and outside the nodal loop holding opposite signs. This concept has been demonstrated in the HNL HSnN/MoS_{2} system using first-principles calculations. The HSnN/MoS_{2} heterobilayer can not only produce a shift-current conductivity with magnitude that is one to two orders larger than other reported systems, but it can also realize a giant bulk electrophotovoltaic effect. Our finding opens new routes to create and manipulate NLO responses in 2D materials.

Towards two-dimensional van der Waals ferroelectrics

The discovery of ferroelectricity in two-dimensional (2D) van der Waals (vdW) materials has brought important functionalities to the 2D materials family, and may trigger a revolution in next-generation nanoelectronics and spintronics. In this Perspective, we briefly review recent progress in the field of 2D vdW ferroelectrics, focusing on the mechanisms that drive spontaneous polarization in 2D systems, unique properties brought about by the reduced lattice dimensionality and promising applications of 2D vdW ferroelectrics. We finish with an outlook for challenges that need to be addressed and our view on possible future research directions.

Observation of the photovoltaic effect in a van der Waals heterostructure

van der Waals (vdW) heterostructures, which can be assembled with various two-dimensional materials, provide a versatile platform for exploring emergent phenomena. Here, we report an observation of the photovoltaic effect in a WS₂/MoS₂ vdW heterostructure. Light excitation of WS₂/MoS₂ at a wavelength of 633 nm yields a photocurrent without applying bias voltages, and the excitation power dependence of the photocurrent shows characteristic crossover from a linear to square root dependence. Photocurrent mapping has clearly shown that the observed photovoltaic effect arises from the WS₂/MoS₂ region, not from Schottky junctions at electrode contacts. Kelvin probe microscopy observations show no slope in the electrostatic potential, excluding the possibility that the photocurrent originates from an unintentionally formed built-in potential.

Silicon flexoelectronic transistors

It is extraordinarily challenging to implement adaptive and seamless interactions between mechanical triggering and current silicon technology for tunable electronics, human-machine interfaces, and micro/nanoelectromechanical systems. Here, we report Si flexoelectronic transistors (SFTs) that can innovatively convert applied mechanical actuations into electrical control signals and achieve directly electromechanical function. Using the strain gradient-induced flexoelectric polarization field in Si as a "gate," the metal-semiconductor interfacial Schottky barriers' heights and the channel width of SFT can be substantially modulated, resulting in tunable electronic transports with specific characteristics. Such SFTs and corresponding perception system can not only create a high strain sensitivity but also identify where the mechanical force is applied. These findings provide an in-depth understanding about the mechanism of interface gating and channel width gating in flexoelectronics and develop highly sensitive silicon-based strain sensors, which has great potential to construct the next-generation silicon electromechanical nanodevices and nanosystems.

Revisiting the Ferroelectric Photovoltaic Properties of Vertical BiFeO3 Capacitors: A Comprehensive Study

The ferroelectric photovoltaic effect has been extensively studied for possible applications in energy conversion and photo-electrics. The reversible spontaneous polarization gives rise to a switchable photovoltaic behavior. However, despite its long history, the origin of the ferroelectric photovoltaic effect still lacks a full understanding since multiple mechanisms such as bulk and Schottky-barrier-related interface effects are involved. Herein, we report a comprehensive study on the photovoltaic response of BiFeO₃-based vertical heterostructures, using multiple strategies to clarify its origin. We found that, under white light illumination, polarization-modulated Schottky barrier at the interface is the dominating mechanism. By varying the top metal contacts, only the photovoltaic effect of the polarization downward state is strongly modulated, suggesting selective interface contribution in different polarization states. A Schottky-barrier-free device shows negligible photovoltaic effect, suggesting the lack of bulk photovoltaic effect in vertical heterostructures under white light illumination.

Recent Progress in Strain Engineering on Van der Waals 2D Materials: Tunable Electrical, Electrochemical, Magnetic, and Optical Properties

Strain engineering is a promising way to tune the electrical, electrochemical, magnetic, and optical properties of 2D materials, with the potential to achieve high-performance 2D-material-based devices ultimately. This review discusses the experimental and theoretical results from recent advances in the strain engineering of 2D materials. Some novel methods to induce strain are summarized and then the tunable electrical and optical/optoelectronic properties of 2D materials via strain engineering are highlighted, including particularly the previously less-discussed strain tuning of superconducting, magnetic, and electrochemical properties. Also, future perspectives of strain engineering are given for its potential applications in functional devices. The state of the survey presents the ever-increasing advantages and popularity of strain engineering for tuning properties of 2D materials. Suggestions and insights for further research and applications in optical, electronic, and spintronic devices are provided.

Liquid Precursor-Guided Phase Engineering of Single-Crystal VO2 Beams

The study of VO₂ flourishes due to its rich competing phases induced by slight stoichiometry variations. However, the vague mechanism of stoichiometry manipulation makes the precise phase engineering of VO₂ still challenging. Here, stoichiometry manipulation of single-crystal VO₂ beams in liquid-assisted growth is systematically studied. Contrary to previous experience, oxygen-rich VO₂ phases are abnormally synthesized under a reduced oxygen concentration, revealing the important function of liquid V₂ O₅ precursor: It submerges VO₂ crystals and stabilizes their stoichiometric phase (M1) by isolating them from the reactive atmosphere, while the uncovered crystals are oxidized by the growth atmosphere. By varying the thickness of liquid V₂ O₅ precursor and thus the exposure time of VO₂ to the atmosphere, various VO₂ phases (M1, T, and M2) can be selectively stabilized. Furthermore, this liquid precursor-guided growth can be used to spatially manages multiphase structures in single VO₂ beams, enriching their deformation modes for actuation applications.

An Air-Rechargeable Zn Battery Enabled by Organic-Inorganic Hybrid Cathode

Self-charging power systems collecting energy harvesting technology and batteries are attracting extensive attention. To solve the disadvantages of the traditional integrated system, such as highly dependent on energy supply and complex structure, an air-rechargeable Zn battery based on MoS2/PANI cathode is reported. Benefited from the excellent conductivity desolvation shield of PANI, the MoS2/PANI cathode exhibits ultra-high capacity (304.98 mAh g-1 in N2 and 351.25 mAh g-1 in air). In particular, this battery has the ability to collect, convert and store energy simultaneously by an air-rechargeable process of the spontaneous redox reaction between the discharged cathode and O2 from air. The air-rechargeable Zn batteries display a high open-circuit voltage (1.15 V), an unforgettable discharge capacity (316.09 mAh g-1 and the air-rechargeable depth is 89.99%) and good air-recharging stability (291.22 mAh g-1 after 50 air recharging/galvanostatic current discharge cycle). Most importantly, both our quasi-solid zinc ion batteries and batteries modules have excellent performance and practicability. This work will provide a promising research direction for the material design and device assembly of the next-generation self-powered system.

Flexible Multi-Element Photothermoelectric Detectors Based on Spray-Coated Graphene/Polyethylenimine Composites for Nondestructive Testing

Photothermoelectric (PTE) detectors receive much attention owing to the superiority of self-powered, non-bias input, and friendly ambient environments, facilitating abundant prospective applications in industrial inspection, medical diagnostics, homeland security, and wearable Internet of Things. However, many drawbacks of currently applicable PTE materials, involving unstable material oxidation, an uncontrollable fabrication process, and unscalable manufacturing, hinder the development of industrial productions. Herein, we demonstrate a vertical graphene/polyethylenimine composite PTE detector fabricated with an optimized spray-coating method in compact alignment on various surfaces, achieving a significant photovoltage detectivity and responsivity of 6.05 × 10⁷ cm Hz^1/2 W^-1 and 2.7 V W^-1 response at a 973 K blackbody temperature radiation (2.98 μm peak wavelength). In addition, the long-term stability and resistible concave and convex bending flexibility are presented. Furthermore, a nondestructive testing system is established and verified through high-spatial-resolution and high-penetration illustration. Overall, the spray-coated and flexible PTE graphene/polyethylenimine multi-elements with broadband infrared absorption compatibility and stable energy conversion are promising candidates for future health monitoring and wearable electronics.

A flexoelectricity-enabled ultrahigh piezoelectric effect of a polymeric composite foam as a strain-gradient electric generator

All dielectric materials including ceramics, semiconductors, biomaterials, and polymers have the property of flexoelectricity, which opens a fertile avenue to sensing, actuation, and energy harvesting by a broad range of materials. However, the flexoelectricity of solids is weak at the macroscale. Here, we achieve an ultrahigh flexoelectric effect via a composite foam based on PDMS and CCTO nanoparticles. The mass- and deformability-specific flexoelectricity of the foam exceeds 10,000 times that of the solid matrix under compression, yielding a density-specific equivalent piezoelectric coefficient 120 times that of PZT. The flexoelectricity output remains stable in 1,000,000 deformation cycles, and a portable sample can power LEDs and charge mobile phones and Bluetooth headsets. Our work provides a route to exploiting flexible and light-weight materials with highly sensitive omnidirectional electromechanical coupling that have applications in sensing, actuation, and scalable energy harvesting.

Highly Efficient Flexocatalysis of Two-Dimensional Semiconductors

Catalysis is vitally important for chemical engineering, energy, and environment. It is critical to discover new mechanisms for efficient catalysis. For piezoelectric/pyroelectric/ferroelectric materials that have a non-centrosymmetric structure, interfacial polarization-induced redox reactions at surfaces leads to advanced mechanocatalysis. Here, the first flexocatalysis for 2D centrosymmetric semiconductors, such as MnO₂  nanosheets, is demonstrated largely expanding the polarization-based-mechanocatalysis to 2D centrosymmetric materials. Under ultrasonic excitation, the reactive species are created due to the strain-gradient-induced flexoelectric polarization in MnO₂  nanosheets composed nanoflowers. The organic pollutants (Methylene Blue et al.) can be effectively degraded within 5 min; the performance of the flexocatalysis is comparable to that of state-of-the-art piezocatalysis, with excellent stability and reproducibility. Moreover, the factors related to flexocatalysis such as material morphology, adsorption, mechanical vibration intensity, and temperature are explored, which give deep insights into the mechanocatalysis. This study opens the field of flexoelectric effect-based mechanochemistry in 2D centrosymmetric semiconductors.

Giant bulk piezophotovoltaic effect in 3R-MoS2

Given its innate coupling with wavefunction geometry in solids and its potential to boost the solar energy conversion efficiency, the bulk photovoltaic effect (BPVE) has been of considerable interest in the past decade^1-14. Initially discovered and developed in ferroelectric oxide materials², the BPVE has now been explored in a wide range of emerging materials, such as Weyl semimetals^9,10, van der Waals nanomaterials^11,12,14, oxide superlattices¹⁵, halide perovskites¹⁶, organics¹⁷, bulk Rashba semiconductors¹⁸ and others. However, a feasible experimental approach to optimize the photovoltaic performance is lacking. Here we show that strain-induced polarization can significantly enhance the BPVE in non-centrosymmetric rhombohedral-type MoS₂ multilayer flakes (that is, 3R-MoS₂). This polarization-enhanced BPVE, termed the piezophotovoltaic effect, exhibits distinctive crystallographic orientation dependence, in that the enhancement mainly manifests in the armchair direction of the 3R-MoS₂ lattice while remaining largely intact in the zigzag direction. Moreover, the photocurrent increases by over two orders of magnitude when an in-plane tensile strain of ~0.2% is applied, rivalling that of state-of-the-art materials. This work unravels the potential of strain engineering in boosting the photovoltaic performance, which could potentially promote the exploration of novel photoelectric processes in strained two-dimensional layered materials and their van der Waals heterostructures.

A Metal-Organic Frameworks Derived 1T-MoS2 with Expanded Layer Spacing for Enhanced Electrocatalytic Hydrogen Evolution

Metal phase molybdenum disulfide (1T-MoS₂ ) is considered a promising electrocatalyst for hydrogen evolution reaction (HER) due to its activated basal and superior electrical conductivity. Here, a one-step solvothermal route is developed to prepare 1T-MoS₂ with expanded layer spacing through the derivatization of a Mo-based organic framework (Mo-MOFs). Benefiting from N,N-dimethylformamide oxide as external stress, the interplanar spacing of (002) of the MoS₂ catalyst is extended to 10.87 Å, which represents the largest one for the 1T-MoS₂ catalyst prepared by the bottom-up approach. Theoretical calculations reveal that the expanded crystal planes alter the electronic structure of 1T-MoS₂ , lower the adsorption-desorption potentials of protons, and thus, trigger efficient catalytic activity for HER. The optimal 1T-MoS₂ catalyst exhibits an overpotential of 98 mV at 10 mA cm^-2 for HER, corresponding to a Tafel slope of 52 mV dec^-1 . This Mo-MOFs-derived strategy provides a potential way to design high-performance catalysts by adjusting the layer spacing of 2D materials.

On the photovoltaic effect asymmetry in ferroelectrics

Despite symmetrical polarization, the magnitude of a light-induced voltage is known to be asymmetric with respect to poling sign in many photovoltaic (PV) ferroelectrics (FEs). This asymmetry remains unclear and is often attributed to extrinsic effects. We show here for the first time that such an asymmetry can be intrinsic, steaming from the superposition of asymmetries of internal FE bias and electro-piezo-strictive deformation. This hypothesis is confirmed by the observed decrease of PV asymmetry for smaller FE bias. Moreover, the both PV effect and remanent polarization are found to increase under vacuum-induced expansion and to decrease for gas-induced compression, with tens percents tunability. The change in cations positions under pressure is analysed through the first-principle density functional theory calculations. The reported properties provide key insight for FE-based solar elements optimization.

Enhanced Pd/a-WO3 /VO2 Hydrogen Gas Sensor Based on VO2 Phase Transition Layer

The utilization of clean hydrogen energy is becoming more feasible for the sustainable development of this society. Considering the safety issues in the hydrogen production, storage, and utilization, a sensitive hydrogen sensor for reliable detection is essential and highly important. Though various gas sensor devices are developed based on tin oxide, tungsten trioxide, or other oxides, the relatively high working temperature, unsatisfactory response time, and detection limitation still affect the extensive applications. In the current study, an amorphous tungsten trioxide (a-WO₃ ) layer is deposited on a phase-change vanadium dioxide film to fabricate a phase transition controlled Pd/a-WO₃ /VO₂ hydrogen sensor for hydrogen detection. Results show that both the response time and sensitivity of the hydrogen sensor are improved greatly if increasing the working temperature over the transition temperature of VO₂ . Theoretical calculations also reveal that the charge transfer at VO₂ /a-WO₃ interface becomes more pronounced once the VO₂ layer transforms to the metal state, which will affect the migration barrier of H atoms in a-WO₃ layer and thus improve the sensor performance. The current study not only realizes a hydrogen sensor with ultrahigh performance based on VO₂ layer, but also provides some clues for designing other gas sensors with phase-change material.

Polarization due to emergent polarity in elemental semiconductor thinfilms under bending

Polarization via strain engineering provides a facial way to functionalize materials. We investigate the origin of electronic polarization in the bent elemental semiconductor thinfilms by combining analytical modeling with quantum mechanical simulation. A bond orbital model reveals a polarity of covalent bonds induced by strain gradient such that polarization along the strain gradient dimension can be induced, giving rise to the flexoelectric effect. At strain gradient1/R=0.01 nm^-1, the net charge differences between the two sides are5×10-4e,2.5×10-3eand7.2×10-3efor C, Si and Ge films respectively. On the other hand, due to the emergent bond polarity, the polarization can be effectively tuned by normal strain applied to the bent film, mimicking the piezoelectric effect. Simulations using the generalized Bloch theorem strongly support this revelation. Findings have important implications for delineating the formation of polarization and related phenomena in semiconductors.

Biomimetic 3D Recognition with 2D Flexible Nanoarchitectures for Ultrasensitive and Visual Extracellular Vesicle Detection

Despite increasing recognition of extracellular vesicles being important circulating biomarkers in disease diagnosis and prognosis, current strategies for extracellular vesicle detection remain limited due to the compromised sample purification and extensive labeling procedures in complex body fluids. Here, we developed a 2D magnetic platform that greatly improves capture efficiency and readily realizes visible signal conversion for extracellular vesicle detection. The technology, termed high-affinity recognition and visual extracellular vesicle testing (HARVEST), leverages 2D flexible Fe₃O₄-MoS₂ nanostructures to recognize extracellular vesicles through multidentate affinity binding and feasible magnetic separation, thus enhancing the extracellular vesicle capture performance with both yield and separation time, affording high sensitivity with the detection limit of 20 extracellular vesicle particles/μL. Through integration with lipid labeling chemistry and the fluorescence visualization system, the platform enables rapid and visible detection. The number of extracellular vesicles can be feasibly determined by smart mobile phones, readily adapted for point-of-care diagnosis. When clinically evaluated, the strategy accurately differentiates melanoma samples from the normal cohort with an AUC of 0.98, demonstrating the efficient extracellular vesicle detection strategy with 2D flexible platforms for cancer diagnosis.

Hexagonal Network of Photocurrent Enhancement in Few-Layer Graphene/InGaN Quantum Dot Junctions

Strain in two-dimensional (2D) materials has attracted particular attention because of the remarkable modification of electronic and optical properties. However, emergent electromechanical phenomena and hidden mechanisms, such as strain-superlattice-induced topological states or flexoelectricity under strain gradient, remain under debate. Here, using scanning photocurrent microscopy, we observe significant photocurrent enhancement in hybrid vertical junction devices made of strained few-layer graphene and InGaN quantum dots. Optoelectronic response and photoluminescence measurements demonstrate a possible mechanism closely tied to the flexoelectric effect in few-layer graphene, where the strain can induce a lateral built-in electric field and assist the separation of electron-hole pairs. Photocurrent mapping reveals an unprecedentedly ordered hexagonal network, suggesting the potential to create a superlattice by strain engineering. Our work provides insights into optoelectronic phenomena in the presence of strain and paves the way for practical applications associated with strained 2D materials.

Energy Interplay in Materials: Unlocking Next-Generation Synchronous Multisource Energy Conversion with Layered 2D Crystals

Layered 2D crystals have unique properties and rich chemical and electronic diversity, with over 6000 2D crystals known and, in principle, millions of different stacked hybrid 2D crystals accessible. This diversity provides unique combinations of properties that can profoundly affect the future of energy conversion and harvesting devices. Notably, this includes catalysts, photovoltaics, superconductors, solar-fuel generators, and piezoelectric devices that will receive broad commercial uptake in the near future. However, the unique properties of layered 2D crystals are not limited to individual applications and they can achieve exceptional performance in multiple energy conversion applications synchronously. This synchronous multisource energy conversion (SMEC) has yet to be fully realized but offers a real game-changer in how devices will be produced and utilized in the future. This perspective highlights the energy interplay in materials and its impact on energy conversion, how SMEC devices can be realized, particularly through layered 2D crystals, and provides a vision of the future of effective environmental energy harvesting devices with layered 2D crystals.

Enhanced polarization and abnormal flexural deformation in bent freestanding perovskite oxides

Recent realizations of ultrathin freestanding perovskite oxides offer a unique platform to probe novel properties in two-dimensional oxides. Here, we observe a giant flexoelectric response in freestanding BiFeO₃ and SrTiO₃ in their bent state arising from strain gradients up to 3.5 × 10⁷ m^-1, suggesting a promising approach for realizing ultra-large polarizations. Additionally, a substantial change in membrane thickness is discovered in bent freestanding BiFeO₃, which implies an unusual bending-expansion/shrinkage effect in the ferroelectric membrane that has never been seen before in crystalline materials. Our theoretical model reveals that this unprecedented flexural deformation within the membrane is attributable to a flexoelectricity-piezoelectricity interplay. The finding unveils intriguing nanoscale electromechanical properties and provides guidance for their practical applications in flexible nanoelectromechanical systems.

Abnormally weak intervalley electron scattering in MoS2 monolayer: insights from the matching between electron and phonon bands

It is known that carrier mobility in layered semiconductors generally increases from two-dimensions (2D) to three-dimensions due to fewer scattering channels resulting from decreased densities of electron and phonon states. In this work, we find an abnormal decrease of electron mobility from monolayer to bulk MoS₂. By carefully analyzing the scattering mechanisms, we can attribute such abnormality to the stronger intravalley scattering in the monolayer but weaker intervalley scattering caused by few intervalley scattering channels and weaker corresponding electron-phonon couplings compared to the bulk case. We show that it is the matching between the electronic band structure and phonon spectrum rather than their densities of electronic and phonon states that determines scattering channels. We propose, for the first time, the phonon-energy-resolved matching function to identify the intra- and inter-valley scattering channels. Furthermore, we show that multiple valleys do not necessarily lead to strong intervalley scattering if: (1) the scattering channels, which can be explicitly captured by the distribution of the matching function, are few due to the small matching between the corresponding electron and phonon bands; and/or (2) the multiple valleys are far apart in the reciprocal space and composed of out-of-plane orbitals so that the corresponding electron-phonon coupling strengths are weak. Consequently, the searching scope of high-mobility 2D materials can be reasonably enlarged using the matching function as useful guidance with the help of band edge orbital analysis.

Experimental Realization and Computational Investigations of B2S2 as a New 2D Material with Potential Applications

A new two-dimensional material B₂S₂ has been successfully synthesized for the first time and validated using first-principles calculations, with fundamental properties analyzed in detail. B₂S₂ has a similar structure as transition-metal dichalcogenides (TMDs) such as MoS₂, and the experimentally prepared free-standing B₂S₂ nanosheets show a uniform height profile lower than 1 nm. A thickness-modulated and unique oxidation-level dependent band gap of B₂S₂ is revealed by theoretical calculations, and vibration signatures are determined to offer a practical scheme for the characterization of B₂S₂. It is shown that the functionalized B₂S₂ is able to provide favorable sites for lithium adsorption with low diffusion barriers, and the prepared B₂S₂ shows a wide band photoluminescence response. These findings offer a feasible new and lighter member for the TMD-like 2D material family with potential for various aspects of applications, such as an anode material for Li-ion batteries and electronic and optoelectronic devices.

Functionalizing Van der Waals materials by shaping them

A number of van der Waals materials can be gradually tuned from electron to hole conductance with an increasing or decreasing thickness, which offers a novel route to modulate nanoscale charge-carrier distribution and thus functionality in devices.

Flexoresponses of Synthetic Antiferromagnetic Systems Hosting Skyrmions

While strain gradients break lattice centrosymmetry, ferromagnetism is a time-reversal symmetry breaking product. Flexomagnetic effect in ferromagnets is usually indirect and weak. In this Letter, we reveal a topologically enhanced flexomagnetic effect in synthetic antiferromagnetic systems based on Dzyaloshinskii-Moriya interaction and the large deformability of skyrmion. Moreover, the synthetic antiferromagnetic skyrmion exhibits an unexpected Hall effect under strain gradient. We propose that this flexo-Hall effect originates from a geometric Magnus force related to the asymmetric deformation of skyrmion. Our results shed new insights into the flexoresponses in systems hosting topological structures and may open up a new field-"flexoskyrmionics".

Flexoelectricity-Enhanced Photovoltaic Effect in Self-Polarized Flexible PZT Nanowire Array Devices

In this investigation, we report the flexoelectricity-enhanced photovoltaic (FPV) effect in a flexible Pb(Zr_0.52Ti_0.48)O₃ nanowire (PZT NW) array/PDMS (polydimethylsiloxane) nanocomposite. The simulation result of density functional theory (DFT) indicated that the FPV effect in PZT NWs can be greatly affected by the interactions of the strain gradients with the internal field generated by self-polarization. We found that when the nanocomposite film was curved down, the photovoltaic current of the aligned PZT-NW/PDMS composite increased by 84.6-fold and 27.6-fold compared with the PZT-nanoparticles/PDMS and randomly aligned PZT-NW/PDMS nanocomposites at the same curvature, respectively. This is mainly ascribed to the increased flexoelectricity in the aligned PZT-NW/PDMS nanocomposite. This study will contribute to a full understanding of the influence of nanoparticle shape on the flexophotovoltaic effect of nanocomposites. It will have potential use in nanocomposites for the study of the FPV effect and associated applications.