1
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Wan S, Huang H, Liu H, Liu H, Li Z, Li Y, Liao Z, Lanza M, Zeng H, Zhou Y. Intertwined Flexoelectricity and Stacking Ferroelectricity in Marginally Twisted hBN Moiré Superlattice. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2410563. [PMID: 39367559 DOI: 10.1002/adma.202410563] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/21/2024] [Revised: 09/11/2024] [Indexed: 10/06/2024]
Abstract
Moiré superlattices in twisted van der Waals homo/heterostructures present a fascinating interplay between electronic and atomic structures, with potential applications in electronic and optoelectronic devices. Flexoelectricity, an electromechanical coupling between electric polarization and strain gradient, is intrinsic to these superlattices because of the lattice misfit strain at the atomic scale. However, due to its weak magnitude, the effect of flexoelectricity on moiré ferroelectricity has remained underexplored. Here, the role of flexoelectricity in shaping and modulating the moiré ferroelectric patterns in twisted hBN homojunction is unveiled. Enhanced flexoelectric effects induce unique stacking ferroelectric domains with hollow triangular structures. Interlayer bubbles influence domain shape and periodicity through local electric field modulation, and tip-stress enables the reversible manipulation of domain area and polarization direction. These findings highlight the impact of flexoelectric effects on moiré ferroelectricity, offering a new tuning knob for its manipulation.
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Affiliation(s)
- Siyuan Wan
- School of Physics and Materials Science, Nanchang University, Nanchang, 330031, China
- National Institute of LED on Silicon Substrate, Nanchang University, Nanchang, 330031, China
| | - Hanying Huang
- School of Physics and Materials Science, Nanchang University, Nanchang, 330031, China
| | - Huanlin Liu
- School of Physics and Materials Science, Nanchang University, Nanchang, 330031, China
| | - Heng Liu
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Zhixiong Li
- School of Physics and Materials Science, Nanchang University, Nanchang, 330031, China
| | - Yue Li
- School of Instrument Science and Optoelectronic Engineering, Nanchang HangKong University, Nanchang, 330063, China
| | - Zhimin Liao
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Mario Lanza
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Hualing Zeng
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Yangbo Zhou
- School of Physics and Materials Science, Nanchang University, Nanchang, 330031, China
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2
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Zojer E. Electrostatically Designing Materials and Interfaces. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2406178. [PMID: 39194368 DOI: 10.1002/adma.202406178] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/30/2024] [Revised: 07/08/2024] [Indexed: 08/29/2024]
Abstract
Collective electrostatic effects arise from the superposition of electrostatic potentials of periodically arranged (di)polar entities and are known to crucially impact the electronic structures of hybrid interfaces. Here, it is discussed, how they can be used outside the beaten paths of materials design for realizing systems with advanced and sometimes unprecedented properties. The versatility of the approach is demonstrated by applying electrostatic design not only to metal-organic interfaces and adsorbed (complex) monolayers, but also to inter-layer interfaces in van der Waals heterostructures, to polar metal-organic frameworks (MOFs), and to the cylindrical pores of covalent organic frameworks (COFs). The presented design ideas are straightforward to simulate and especially for metal-organic interfaces also their experimental implementation has been amply demonstrated. For van der Waals heterostructures, the needed building blocks are available, while the required assembly approaches are just being developed. Conversely, for MOFs the necessary growth techniques exist, but more work on advanced linker molecules is required. Finally, COF structures exist that contain pores decorated with polar groups, but the electrostatic impact of these groups has been largely ignored so far. All this suggest that the dawn of the age of electrostatic design is currently experienced with potential breakthroughs lying ahead.
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Affiliation(s)
- Egbert Zojer
- Institute of Solid State Physics, NAWI Graz, Petersgasse 16, Graz, A-8010, Austria
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3
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Zhang ZH, Yang LZ, Qin HJ, Liao WA, Liu H, Fu J, Zeng H, Zhang W, Fu YS. Direct Observations of Spontaneous In-Plane Electronic Polarization in 2D Te Films. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2405590. [PMID: 39194389 DOI: 10.1002/adma.202405590] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/19/2024] [Revised: 08/15/2024] [Indexed: 08/29/2024]
Abstract
Single-element polarization in low dimensions is fascinating for constructing next-generation nanoelectronics with multiple functionalities, yet remains difficult to access with satisfactory performance. Here, spectroscopic evidences are presented for the spontaneous electronic polarization in tellurium (Te) films thinned down to bilayer, characterized by low-temperature scanning tunneling microscopy/spectroscopy. The unique chiral structure and centrosymmetry-breaking character in 2D Te gives rise to sizable in-plane polarization with accumulated charges, which is demonstrated by the reversed band-bending trends at opposite polarization edges in spatially resolved spectra and conductance mappings. The polarity of charges exhibits intriguing influence on imaging the moiré superlattice at the Te-graphene interface. Moreover, the plain spontaneous polarization robustly exists for various film thicknesses, and can universally preserve against different epitaxial substrates. The experimental validations of considerable electronic polarization in Te multilayers thus provide a realistic platform for promisingly facilitating reliable applications in microelectronic devices.
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Affiliation(s)
- Zhi-Hao Zhang
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Lian-Zhi Yang
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Hao-Jun Qin
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Wen-Ao Liao
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Heng Liu
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, 230026, China
- CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Jun Fu
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, 230026, China
- CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Hualing Zeng
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, 230026, China
- CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Wenhao Zhang
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Ying-Shuang Fu
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
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4
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Hassan Y, Singh B, Joe M, Son BM, Ngo TD, Jang Y, Sett S, Singha A, Biswas R, Bhakar M, Watanabe K, Taniguchi T, Raghunathan V, Sheet G, Lee Z, Yoo WJ, Srivastava PK, Lee C. Twist-Controlled Ferroelectricity and Emergent Multiferroicity in WSe 2 Bilayers. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2406290. [PMID: 39318077 DOI: 10.1002/adma.202406290] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/02/2024] [Revised: 08/27/2024] [Indexed: 09/26/2024]
Abstract
Recently, researchers have been investigating artificial ferroelectricity, which arises when inversion symmetry is broken in certain R-stacked, i.e., zero-degree twisted, van der Waals (vdW) bilayers. Here, the study reports the twist-controlled ferroelectricity in tungsten diselenide (WSe2) bilayers. The findings show noticeable room temperature ferroelectricity that decreases with twist angle within the range 0° < θ < 3°, and disappears completely for θ ≥ 4°. This variation aligns with moiré length scale-controlled ferroelectric dynamics (0° < θ < 3°), while loss beyond 4° may relate to twist-controlled commensurate to non-commensurate transitions. This twist-controlled ferroelectricity serves as a spectroscopic tool for detecting transitions between commensurate and incommensurate moiré patterns. At 5.5 K, 3° twisted WSe2 exhibits ferroelectric and correlation-driven ferromagnetic ordering, indicating twist-controlled multiferroic behavior. The study offers insights into twist-controlled coexisting ferro-ordering and serves as valuable spectroscopic tools.
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Affiliation(s)
- Yasir Hassan
- Department of Materials Science and Engineering, Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon, 34134, South Korea
| | - Budhi Singh
- School of Mechanical Engineering, Sungkyunkwan University, Suwon, 16419, South Korea
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, South Korea
| | - Minwoong Joe
- School of Mechanical Engineering, Sungkyunkwan University, Suwon, 16419, South Korea
| | - Byoung-Min Son
- Department of Semiconductor Convergence Engineering, Sungkyunkwan University, Suwon, 16419, South Korea
| | - Tien Dat Ngo
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, South Korea
| | - Younggeun Jang
- Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan, 44919, South Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, South Korea
| | - Shaili Sett
- Department of Physics, Indian Institute of Science, Bangalore, 560012, India
| | - Arup Singha
- Department of Physics, Indian Institute of Science, Bangalore, 560012, India
| | - Rabindra Biswas
- Department of Electrical and Communication Engineering, Indian Institute of Science, Bangalore, 560012, India
| | - Monika Bhakar
- Department of Physics, Indian Institute of Science Education and Research Mohali, Punjab, 140306, India
| | - Kenji Watanabe
- National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki, 305-0044, Japan
| | - Takashi Taniguchi
- National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki, 305-0044, Japan
| | - Varun Raghunathan
- Department of Electrical and Communication Engineering, Indian Institute of Science, Bangalore, 560012, India
| | - Goutam Sheet
- Department of Physics, Indian Institute of Science Education and Research Mohali, Punjab, 140306, India
| | - Zonghoon Lee
- Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan, 44919, South Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, South Korea
| | - Won Jong Yoo
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, South Korea
| | | | - Changgu Lee
- School of Mechanical Engineering, Sungkyunkwan University, Suwon, 16419, South Korea
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, South Korea
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5
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Zhao H, Yang S, Ge C, Zhang D, Huang L, Chen M, Pan A, Wang X. Tunable Out-of-Plane Reconstructions in Moiré Superlattices of Transition Metal Dichalcogenide Heterobilayers. ACS NANO 2024. [PMID: 39316511 DOI: 10.1021/acsnano.4c08081] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/26/2024]
Abstract
The reconstructed moiré superlattices of the transition metal chalcogenide (TMD), formed by the combined effects of interlayer coupling and intralayer strain, provide a platform for exploring quantum physics. Here, using scanning tunneling microscopy/spectroscopy, we observe that the strained WSe2/WS2 moiré superlattices undergo various out-of-plane atomically buckled configurations, a phenomenon termed out-of-plane reconstruction. This evolution is attributed to the differentiated response of intralayer strain in high-symmetry stacking regions to external strain. Notably, in larger out-of-plane reconstructions, there is a significant alteration in the local density of states (LDOS) near the Γ point in the valence band, exceeding 300%, with the moiré potential in the valence band surpassing 200 meV. Further, we confirm that the variation in interlayer coupling within high-symmetry stacking regions is the main factor affecting the moiré electronic states rather than the intralayer strain. Our study unveils intrinsic regulating mechanisms of out-of-plane reconstructed moiré superlattices and contributes to the study of reconstructed moiré physics.
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Affiliation(s)
- Haipeng Zhao
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China
| | - Shengguo Yang
- Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Center for Quantum Effects and Applications (SICQEA), Hunan Normal University, Changsha 410081, China
| | - Cuihuan Ge
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China
| | - Danliang Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China
| | - Lanyu Huang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China
| | - Mingxing Chen
- Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Center for Quantum Effects and Applications (SICQEA), Hunan Normal University, Changsha 410081, China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China
| | - Xiao Wang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China
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6
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Wang J, Li X, Ma X, Chen L, Liu JM, Duan CG, Íñiguez-González J, Wu D, Yang Y. Ultrafast Switching of Sliding Polarization and Dynamical Magnetic Field in van der Waals Bilayers Induced by Light. PHYSICAL REVIEW LETTERS 2024; 133:126801. [PMID: 39373442 DOI: 10.1103/physrevlett.133.126801] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/08/2024] [Revised: 05/03/2024] [Accepted: 08/14/2024] [Indexed: 10/08/2024]
Abstract
Sliding ferroelectricity is a unique type of polarity recently observed in van der Waals bilayers with a suitable stacking. However, electric-field control of sliding ferroelectricity is hard and could induce large coercive electric fields and serious leakage currents that corrode the ferroelectricity and electronic properties, which are essential for modern two-dimensional electronics and optoelectronics. Here, we proposed laser-pulse deterministic control of sliding polarization in bilayer hexagonal boron nitride by first principles and molecular dynamics simulation with machine-learned force fields. The laser pulses excite shear modes that exhibit certain directional movements of lateral sliding between bilayers. The vibration of excited modes under laser pulses is predicted to overcome the energy barrier and achieve the switching of sliding polarization. Furthermore, it is found that three possible sliding transitions-between AB (BA) and BA (AB) stacking-can lead to the occurrence of dynamical magnetic fields along three different directions. Remarkably, the magnetic fields are generated by the simple linear motion of nonmagnetic species, without any need for more exotic (circular, spiral) pathways. Such predictions of deterministic control of sliding polarization and multistates of dynamical magnetic field thus expand the potential applications of sliding ferroelectricity in memory and electronic devices.
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Affiliation(s)
- Jian Wang
- Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
| | - Xu Li
- Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
| | - Xingyue Ma
- Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
| | | | - Jun-Ming Liu
- Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
| | | | | | - Di Wu
- Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
| | - Yurong Yang
- Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
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7
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Wang Y, Zeng Z, Tian Z, Li C, Braun K, Huang L, Li Y, Luo X, Yi J, Wu G, Liu G, Li D, Zhou Y, Chen M, Wang X, Pan A. Sliding Ferroelectricity Induced Ultrafast Switchable Photovoltaic Response in ε-InSe Layers. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2410696. [PMID: 39276006 DOI: 10.1002/adma.202410696] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/23/2024] [Revised: 09/04/2024] [Indexed: 09/16/2024]
Abstract
2D sliding ferroelectric semiconductors have greatly expanded the ferroelectrics family with the flexibility of bandgap and material properties, which hold great promise for ultrathin device applications that combine ferroelectrics with optoelectronics. Besides the induced different resistance states for non-volatile memories, the switchable ferroelectric polarizations can also modulate the photogenerated carriers for potentially ultrafast optoelectronic devices. Here, it is demonstrated that the room temperature sliding ferroelectricity can be used for ultrafast switchable photovoltaic response in ε-InSe layers. By first-principles calculations and experimental characterizations, it is revealed that the ferroelectricity with out-of-plane (OOP) polarization only exists in even layer ε-InSe. The ferroelectricity is also demonstrated in ε-InSe-based vertical devices, which exhibit high on-off ratios (≈104) and non-volatile storage capabilities. Moreover, the OOP ferroelectricity enables an ultrafast (≈3 ps) bulk photovoltaic response in the near-infrared band, rendering it a promising material for self-powered reconfigurable and ultrafast photodetector. This work reveals the essential role of ferroelectric polarization on the photogenerated carrier dynamics and paves the way for hybrid multifunctional ferroelectric and optoelectronic devices.
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Affiliation(s)
- Yufan Wang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Zhouxiaosong Zeng
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Zhiqiang Tian
- Key Laboratory for Matter Microstructure and Function of Hunan Province, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Center for Quantum Effects and Applications (SICQEA), School of Physics and Electronics, Hunan Normal University, Changsha, 410081, China
| | - Cheng Li
- School of Physics, Hunan Key Laboratory of Nanophotonics and Devices, Central South University, Changsha, 410083, China
| | - Kai Braun
- Institute of Physical and Theoretical Chemistry and LISA+, University of Tübingen, 72076, Tübingen, Germany
| | - Lanyu Huang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Yang Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Xinyi Luo
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Jiali Yi
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Guangcheng Wu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Guixian Liu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Dong Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Yu Zhou
- School of Physics, Hunan Key Laboratory of Nanophotonics and Devices, Central South University, Changsha, 410083, China
| | - Mingxing Chen
- Key Laboratory for Matter Microstructure and Function of Hunan Province, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Center for Quantum Effects and Applications (SICQEA), School of Physics and Electronics, Hunan Normal University, Changsha, 410081, China
- State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083, China
| | - Xiao Wang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Anlian Pan
- Key Laboratory for Matter Microstructure and Function of Hunan Province, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Center for Quantum Effects and Applications (SICQEA), School of Physics and Electronics, Hunan Normal University, Changsha, 410081, China
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8
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Fan FR, Xiao C, Yao W. Intrinsic dipole Hall effect in twisted MoTe 2: magnetoelectricity and contact-free signatures of topological transitions. Nat Commun 2024; 15:7997. [PMID: 39266571 PMCID: PMC11393455 DOI: 10.1038/s41467-024-52314-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/13/2024] [Accepted: 08/30/2024] [Indexed: 09/14/2024] Open
Abstract
We discover an intrinsic dipole Hall effect in a variety of magnetic insulating states at integer fillings of twisted MoTe2 moiré superlattice, including topologically trivial and nontrivial ferro-, antiferro-, and ferri-magnetic configurations. The dipole Hall current, in linear response to in-plane electric field, generates an in-plane orbital magnetization M∥ along the field, through which an AC field can drive magnetization oscillation up to THz range. Upon the continuous topological phase transitions from trivial to quantum anomalous Hall states in both ferromagnetic and antiferromagnetic configurations, the dipole Hall current and M∥ have an abrupt sign change, enabling contact-free detection of the transitions through the magnetic stray field. In configurations where the linear response is forbidden by symmetry, the dipole Hall current and M∥ appear as a crossed nonlinear response to both in-plane and out-of-plane electric fields. These magnetoelectric phenomena showcase fascinating functionalities of insulators from the interplay between magnetism, topology, and electrical polarization.
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Affiliation(s)
- Feng-Ren Fan
- New Cornerstone Science Laboratory, Department of Physics, University of Hong Kong, Hong Kong, China
- HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, Hong Kong, China
| | - Cong Xiao
- HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, Hong Kong, China
- Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macau, China
| | - Wang Yao
- New Cornerstone Science Laboratory, Department of Physics, University of Hong Kong, Hong Kong, China.
- HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, Hong Kong, China.
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9
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Xue G, Qin B, Ma C, Yin P, Liu C, Liu K. Large-Area Epitaxial Growth of Transition Metal Dichalcogenides. Chem Rev 2024; 124:9785-9865. [PMID: 39132950 DOI: 10.1021/acs.chemrev.3c00851] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/13/2024]
Abstract
Over the past decade, research on atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) has expanded rapidly due to their unique properties such as high carrier mobility, significant excitonic effects, and strong spin-orbit couplings. Considerable attention from both scientific and industrial communities has fully fueled the exploration of TMDs toward practical applications. Proposed scenarios, such as ultrascaled transistors, on-chip photonics, flexible optoelectronics, and efficient electrocatalysis, critically depend on the scalable production of large-area TMD films. Correspondingly, substantial efforts have been devoted to refining the synthesizing methodology of 2D TMDs, which brought the field to a stage that necessitates a comprehensive summary. In this Review, we give a systematic overview of the basic designs and significant advancements in large-area epitaxial growth of TMDs. We first sketch out their fundamental structures and diverse properties. Subsequent discussion encompasses the state-of-the-art wafer-scale production designs, single-crystal epitaxial strategies, and techniques for structure modification and postprocessing. Additionally, we highlight the future directions for application-driven material fabrication and persistent challenges, aiming to inspire ongoing exploration along a revolution in the modern semiconductor industry.
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Affiliation(s)
- Guodong Xue
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Biao Qin
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Chaojie Ma
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Peng Yin
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Can Liu
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing 100871, China
- Songshan Lake Materials Laboratory, Dongguan 523808, China
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10
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Zhang J, Zhang J, Qi Y, Gong S, Xu H, Liu Z, Zhang R, Sadi MA, Sychev D, Zhao R, Yang H, Wu Z, Cui D, Wang L, Ma C, Wu X, Gao J, Chen YP, Wang X, Jiang Y. Room-temperature ferroelectric, piezoelectric and resistive switching behaviors of single-element Te nanowires. Nat Commun 2024; 15:7648. [PMID: 39223121 PMCID: PMC11368953 DOI: 10.1038/s41467-024-52062-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/23/2024] [Accepted: 08/26/2024] [Indexed: 09/04/2024] Open
Abstract
Ferroelectrics are essential in memory devices for multi-bit storage and high-density integration. Ferroelectricity mainly exists in compounds but rare in single-element materials due to their lack of spontaneous polarization in the latter. However, we report a room-temperature ferroelectricity in quasi-one-dimensional Te nanowires. Piezoelectric characteristics, ferroelectric loops and domain reversals are clearly observed. We attribute the ferroelectricity to the ion displacement created by the interlayer interaction between lone-pair electrons. Ferroelectric polarization can induce a strong field effect on the transport along the Te chain, giving rise to a self-gated ferroelectric field-effect transistor. By utilizing ferroelectric Te nanowire as channel, the device exhibits high mobility (~220 cm2·V-1·s-1), continuous-variable resistive states can be observed with long-term retention (>105 s), fast speed (<20 ns) and high-density storage (>1.92 TB/cm2). Our work provides opportunities for single-element ferroelectrics and advances practical applications such as ultrahigh-density data storage and computing-in-memory devices.
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Affiliation(s)
- Jinlei Zhang
- Key Laboratory of Inteligent Optoelectronic Devices and Chips of Jiangsu Higher Education Institutions, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, China
- Advanced Technology Research Institute of Taihu Photon Center, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, China
- Laboratory of Solid State Microstructures, Nanjing University, Nanjing, China
| | - Jiayong Zhang
- Key Laboratory of Inteligent Optoelectronic Devices and Chips of Jiangsu Higher Education Institutions, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, China
| | - Yaping Qi
- Department of Engineering Science, Faculty of Innovation Engineering, Macau University of Science and Technology, Macau SAR, China
- Advanced Institute for Materials Research, Tohoku University, Sendai, Japan
| | - Shuainan Gong
- Key Laboratory of Inteligent Optoelectronic Devices and Chips of Jiangsu Higher Education Institutions, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, China
| | - Hang Xu
- Key Laboratory of Inteligent Optoelectronic Devices and Chips of Jiangsu Higher Education Institutions, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, China
| | - Zhenqi Liu
- Key Laboratory of Inteligent Optoelectronic Devices and Chips of Jiangsu Higher Education Institutions, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, China
| | - Ran Zhang
- Key Laboratory of Inteligent Optoelectronic Devices and Chips of Jiangsu Higher Education Institutions, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, China
| | - Mohammad A Sadi
- Department of Physics and Astronomy and Elmore Family School of Electrical and Computer Engineering and Birck Nanotechnology Center and Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, IN, USA
| | - Demid Sychev
- Department of Physics and Astronomy and Elmore Family School of Electrical and Computer Engineering and Birck Nanotechnology Center and Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, IN, USA
| | - Run Zhao
- Key Laboratory of Inteligent Optoelectronic Devices and Chips of Jiangsu Higher Education Institutions, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, China
| | - Hongbin Yang
- Institute of Materials Science & Devices, Suzhou University of Science and Technology, Suzhou, China
| | - Zhenping Wu
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing, China
| | - Dapeng Cui
- Department of Physics and Astronomy, University of Tennessee, Knoxville, TN, USA
| | - Lin Wang
- School of Materials Science and Engineering, Shanghai University, Shanghai, China
| | - Chunlan Ma
- Key Laboratory of Inteligent Optoelectronic Devices and Chips of Jiangsu Higher Education Institutions, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, China
| | - Xiaoshan Wu
- Advanced Technology Research Institute of Taihu Photon Center, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, China
| | - Ju Gao
- Key Laboratory of Inteligent Optoelectronic Devices and Chips of Jiangsu Higher Education Institutions, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, China
- School for Optoelectronic Engineering, Zaozhuang University, ZaoZhuang, Shandong, China
| | - Yong P Chen
- Advanced Institute for Materials Research, Tohoku University, Sendai, Japan.
- Department of Physics and Astronomy and Elmore Family School of Electrical and Computer Engineering and Birck Nanotechnology Center and Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, IN, USA.
- Institute of Physics and Astronomy and Villum Center for Hybrid Quantum Materials and Devices, Aarhus University, Aarhus, Denmark.
| | - Xinran Wang
- School of Integrated Circuits, Nanjing University, Suzhou, China.
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
- Interdisciplinary Research Center for Future Intelligent Chips (Chip-X), Nanjing University, Suzhou, China.
- Suzhou Laboratory, Suzhou, China.
| | - Yucheng Jiang
- Key Laboratory of Inteligent Optoelectronic Devices and Chips of Jiangsu Higher Education Institutions, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, China.
- Advanced Technology Research Institute of Taihu Photon Center, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, China.
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11
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Zang P, Yu C, Zhang R, Yang D, Gai S, Yang P, Lin J. Revealing the Optimization Route of Piezoelectric Sonosensitizers: From Mechanism to Engineering Methods. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2401650. [PMID: 38712474 DOI: 10.1002/smll.202401650] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/02/2024] [Revised: 04/17/2024] [Indexed: 05/08/2024]
Abstract
Piezoelectric catalysis is a novel catalytic technology that has developed rapidly in recent years and has attracted extensive interest among researchers in the field of tumor therapy for its acoustic-sensitizing properties. Nevertheless, researchers are still controversial about the key technical difficulties in the modulation of piezoelectric sonosensitizers for tumor therapy applications, which is undoubtedly a major obstacle to the performance modulation of piezoelectric sonosensitizers. Clarification of this challenge will be beneficial to the design and optimization of piezoelectric sonosensitizers in the future. Here, the authors start from the mechanism of piezoelectric catalysis and elaborate the mechanism and methods of defect engineering and phase engineering for the performance modulation of piezoelectric sonosensitizers based on the energy band theory. The combined therapeutic strategy of piezoelectric sonosensitizers with enzyme catalysis and immunotherapy is introduced. Finally, the challenges and prospects of piezoelectric sonosensitizers are highlighted. Hopefully, the explorations can guide researchers toward the optimization of piezoelectric sonosensitizers and can be applied in their own research.
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Affiliation(s)
- Pengyu Zang
- Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, College of Material Sciences and Chemical Engineering, Harbin Engineering University, Harbin, 150001, P. R. China
| | - Chenghao Yu
- Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, College of Material Sciences and Chemical Engineering, Harbin Engineering University, Harbin, 150001, P. R. China
| | - Rui Zhang
- Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, College of Material Sciences and Chemical Engineering, Harbin Engineering University, Harbin, 150001, P. R. China
| | - Dan Yang
- Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, College of Material Sciences and Chemical Engineering, Harbin Engineering University, Harbin, 150001, P. R. China
| | - Shili Gai
- Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, College of Material Sciences and Chemical Engineering, Harbin Engineering University, Harbin, 150001, P. R. China
| | - Piaoping Yang
- Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, College of Material Sciences and Chemical Engineering, Harbin Engineering University, Harbin, 150001, P. R. China
| | - Jun Lin
- State Key Laboratory of Rare Earth Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, P. R. China
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12
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Chen Y, Lin J, Jiang J, Wang D, Yu Y, Li S, Pan J, Chen H, Mao W, Xing H, Ouyang F, Luo Z, Zhou S, Liu F, Wang S, Zhang J. Constructing Slip Stacking Diversity in Van der Waals Homobilayers. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2404734. [PMID: 39081101 DOI: 10.1002/adma.202404734] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/01/2024] [Revised: 06/12/2024] [Indexed: 09/19/2024]
Abstract
The van der Waals (vdW) interface provides two important degrees of freedom-twist and slip-to tune interlayer structures and inspire unique physics. However, constructing diversified high-quality slip stackings (i.e., lattice orientations between layers are parallel with only interlayer sliding) is more challenging than twisted stackings due to angstrom-scale structural discrepancies between different slip stackings, sparsity of thermodynamically stable candidates and insufficient mechanism understanding. Here, using transition metal dichalcogenide (TMD) homobilayers as a model system, this work theoretically elucidates that vdW materials with low lattice symmetry and weak interlayer coupling allow the creation of multifarious thermodynamically advantageous slip stackings, and experimentally achieves 13 and 9 slip stackings in 1T″-ReS2 and 1T″-ReSe2 bilayers via direct growth, which are systematically revealed by atomic-resolution scanning transmission electron microscopy (STEM), angle-resolved polarization Raman spectroscopy, and second harmonic generation (SHG) measurements. This work also develops modulation strategies to switch the stacking via grain boundaries (GBs) and to expand the slip stacking library from thermodynamic to kinetically favored structures via in situ thermal treatment. Finally, density functional theory (DFT) calculations suggest a prominent dependence of the pressure-induced electronic band structure transition on stacking configurations. These studies unveil a unique vdW epitaxy and offer a viable means for manipulating interlayer atomic registries.
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Affiliation(s)
- Yun Chen
- School of Advanced Materials, Peking University Shenzhen Graduate School, Shenzhen, Guangdong, 518055, China
- Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, Hunan Key Laboratory of Mechanism and Technology of Quantum Information, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha, 410000, China
- School of Materials Science and Engineering, Xiangtan University, Xiangtan, 411105, China
| | - Jinguo Lin
- State Key Laboratory of Nonlinear Mechanics, Institute of Mechanics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Junjie Jiang
- Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, Hunan Key Laboratory of Mechanism and Technology of Quantum Information, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha, 410000, China
- School of Physics, Institute of Quantum Physics, Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, Hunan Key Laboratory of Nanophotonics and Devices, Central South University, Changsha, 410083, China
| | - Danyang Wang
- Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, Hunan Key Laboratory of Mechanism and Technology of Quantum Information, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha, 410000, China
| | - Yue Yu
- School of Material Science and Engineering, Peking University, Beijing, 100871, China
| | - Shouheng Li
- Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, Hunan Key Laboratory of Mechanism and Technology of Quantum Information, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha, 410000, China
| | - Jun'an Pan
- School of Materials Science and Engineering, Xiangtan University, Xiangtan, 411105, China
| | - Haitao Chen
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, 410000, China
| | - Weiguo Mao
- College of Materials Science and Engineering, Changsha University of Science and Technology, Hunan, 410114, China
| | - Huanhuan Xing
- Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, Hunan Key Laboratory of Mechanism and Technology of Quantum Information, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha, 410000, China
| | - Fangping Ouyang
- School of Physics, Institute of Quantum Physics, Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, Hunan Key Laboratory of Nanophotonics and Devices, Central South University, Changsha, 410083, China
- School of Physics and Technology, State Key Laboratory of Chemistry and Utilization of Carbon Based Energy Resources, Xinjiang University, Urumqi, 830046, China
| | - Zheng Luo
- Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, Hunan Key Laboratory of Mechanism and Technology of Quantum Information, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha, 410000, China
| | - Shen Zhou
- Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, Hunan Key Laboratory of Mechanism and Technology of Quantum Information, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha, 410000, China
| | - Feng Liu
- State Key Laboratory of Nonlinear Mechanics, Institute of Mechanics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Shanshan Wang
- School of Advanced Materials, Peking University Shenzhen Graduate School, Shenzhen, Guangdong, 518055, China
- Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, Hunan Key Laboratory of Mechanism and Technology of Quantum Information, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha, 410000, China
| | - Jin Zhang
- School of Advanced Materials, Peking University Shenzhen Graduate School, Shenzhen, Guangdong, 518055, China
- School of Material Science and Engineering, Peking University, Beijing, 100871, China
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13
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Deb S, Krause J, Faria Junior PE, Kempf MA, Schwartz R, Watanabe K, Taniguchi T, Fabian J, Korn T. Excitonic signatures of ferroelectric order in parallel-stacked MoS 2. Nat Commun 2024; 15:7595. [PMID: 39217159 PMCID: PMC11366029 DOI: 10.1038/s41467-024-52011-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/02/2024] [Accepted: 08/22/2024] [Indexed: 09/04/2024] Open
Abstract
Interfacial ferroelectricity, prevalent in various parallel-stacked layered materials, allows switching of out-of-plane ferroelectric order by in-plane sliding of adjacent layers. Its resilience against doping potentially enables next-generation storage and logic devices. However, studies have been limited to indirect sensing or visualization of ferroelectricity. For transition metal dichalcogenides, there is little knowledge about the influence of ferroelectric order on their intrinsic valley and excitonic properties. Here, we report direct probing of ferroelectricity in few-layer 3R-MoS2 using reflectance contrast spectroscopy. Contrary to a simple electrostatic perception, layer-hybridized excitons with out-of-plane electric dipole moment remain decoupled from ferroelectric ordering, while intralayer excitons with in-plane dipole orientation are sensitive to it. Ab initio calculations identify stacking-specific interlayer hybridization leading to this asymmetric response. Exploiting this sensitivity, we demonstrate optical readout and control of multi-state polarization with hysteretic switching in a field-effect device. Time-resolved Kerr ellipticity reveals direct correspondence between spin-valley dynamics and stacking order.
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Affiliation(s)
- Swarup Deb
- Institute of Physics, University of Rostock, Albert-Einstein-Str. 23, Rostock, 18059, Germany.
| | - Johannes Krause
- Institute of Physics, University of Rostock, Albert-Einstein-Str. 23, Rostock, 18059, Germany
| | - Paulo E Faria Junior
- Institute for Theoretical Physics, University of Regensburg, 93040, Regensburg, Germany
| | - Michael Andreas Kempf
- Institute of Physics, University of Rostock, Albert-Einstein-Str. 23, Rostock, 18059, Germany
| | - Rico Schwartz
- Institute of Physics, University of Rostock, Albert-Einstein-Str. 23, Rostock, 18059, Germany
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, NIMS, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, NIMS, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Jaroslav Fabian
- Institute for Theoretical Physics, University of Regensburg, 93040, Regensburg, Germany
| | - Tobias Korn
- Institute of Physics, University of Rostock, Albert-Einstein-Str. 23, Rostock, 18059, Germany.
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14
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Hu H, Zeng G, Ouyang G. Theoretical design of rhombohedral-stacked MoS 2-based ferroelectric tunneling junctions with ultra-high tunneling electroresistances. Phys Chem Chem Phys 2024; 26:22549-22557. [PMID: 39150538 DOI: 10.1039/d4cp02278e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/17/2024]
Abstract
The sliding ferroelectrics formed by rhombohedral-stacked transition metal dichalcogenides (R-TMDs) greatly broaden the ferroelectric candidate materials. However, the weak ferroelectricity and many failure behaviors (such as irreversible lattice strains or defects) regulated by applied stimuli hinder their application. Here we systematically explore the interface electronic and transport properties of R-MoS2-based van der Waals heterojunctions (vdWHJs) by first-principles calculations. We find that the polarization and the band non-degeneracy of 2R-MoS2 increase with decreasing interlayer distance (d1). Moreover, the polarization direction of graphene (Gra)/2R-MoS2 P↑ state can be switched with a small increase in d1 (about 0.124 Å) due to the weakening of the polarization field (Ep) by a built-in electric field (Ei). The equilibrium state of superposition (|Ep + Ei|) or weakening (|Ep - Ei|) can be modulated by interface distances, which prompts vertical strain-regulated polarization or Schottky barriers. Furthermore, Gra/2R-MoS2 and Gra/R-MoS2/WS2 vdW ferroelectric tunneling junctions (FTJs) demonstrate ultra-high tunneling electroresistance (TER) ratios of 1.55 × 105 and 2.61 × 106, respectively, as the polarization direction switches. Our results provide an avenue for the design of future R-TMD vdW FTJs.
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Affiliation(s)
- Huamin Hu
- School of Materials Science and Engineering, Changsha University of Science and Technology, Changsha 410114, China.
| | - Guang Zeng
- School of Materials Science and Engineering, Changsha University of Science and Technology, Changsha 410114, China.
| | - Gang Ouyang
- Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, School of Physics and Electronics, Hunan Normal University, Changsha 410081, China.
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15
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McHugh JG, Li X, Soltero I, Fal'ko VI. Two-dimensional electrons at mirror and twistronic twin boundaries in van der Waals ferroelectrics. Nat Commun 2024; 15:6838. [PMID: 39122695 PMCID: PMC11316064 DOI: 10.1038/s41467-024-51176-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/22/2024] [Accepted: 07/31/2024] [Indexed: 08/12/2024] Open
Abstract
Semiconducting transition metal dichalcogenides (MX2) occur in 2H and rhombohedral (3R) polytypes, respectively distinguished by anti-parallel and parallel orientation of consecutive monolayer lattices. In its bulk form, 3R-MX2 is ferroelectric, hosting an out-of-plane electric polarisation, the direction of which is dictated by stacking. Here, we predict that twin boundaries, separating adjacent polarisation domains with reversed built-in electric fields, are able to host two-dimensional electrons and holes with an areal density reaching ~ 1013cm-2. Our modelling suggests that n-doped twin boundaries have a more promising binding energy than p-doped ones, whereas hole accumulation is stable at external surfaces of a twinned film. We also propose that assembling pairs of mono-twin films with a 'magic' twist angle θ* that provides commensurability between the moiré pattern at the interface and the accumulated carrier density, should promote a regime of strongly correlated states of electrons, such as Wigner crystals, and we specify the values of θ* for homo- and heterostructures of various TMDs.
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Affiliation(s)
- James G McHugh
- Department of Physics and Astronomy, University of Manchester, Oxford Road, Manchester, M13 9PL, UK
- National Graphene Institute, University of Manchester, Booth St. E., Manchester, M13 9PL, UK
| | - Xue Li
- Department of Physics and Astronomy, University of Manchester, Oxford Road, Manchester, M13 9PL, UK
- National Graphene Institute, University of Manchester, Booth St. E., Manchester, M13 9PL, UK
| | - Isaac Soltero
- Department of Physics and Astronomy, University of Manchester, Oxford Road, Manchester, M13 9PL, UK
- National Graphene Institute, University of Manchester, Booth St. E., Manchester, M13 9PL, UK
| | - Vladimir I Fal'ko
- Department of Physics and Astronomy, University of Manchester, Oxford Road, Manchester, M13 9PL, UK.
- National Graphene Institute, University of Manchester, Booth St. E., Manchester, M13 9PL, UK.
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16
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Kinoshita K, Lin YC, Moriya R, Okazaki S, Onodera M, Zhang Y, Senga R, Watanabe K, Taniguchi T, Sasagawa T, Suenaga K, Machida T. Crossover between rigid and reconstructed moiré lattice in h-BN-encapsulated twisted bilayer WSe 2 with different twist angles. NANOSCALE 2024; 16:14358-14365. [PMID: 38953240 DOI: 10.1039/d4nr01863j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/03/2024]
Abstract
A moiré lattice in a twisted-bilayer transition metal dichalcogenide (tBL-TMD) exhibits a complex atomic reconstruction effect when its twist angle is less than a few degrees. The influence of the atomic reconstruction on material properties of the tBL-TMD has been of particular interest. In this study, we performed scanning transmission electron microscopy (STEM) imaging of a moiré lattice in h-BN-encapsulated twisted bilayer WSe2 with various twist angles. Atomic-resolution imaging of the moiré lattice revealed a reconstructed moiré lattice below a crossover twist angle of ∼4° and a rigid moiré lattice above this angle. Our findings indicate that h-BN encapsulation has a considerable influence on lattice reconstruction, as the crossover twist angle was larger in h-BN-encapsulated devices compared to non-encapsulated devices. We believe that this difference is due to the improved flatness and uniformity of the twisted bilayers with h-BN encapsulation. Our results provide a foundation for a deeper understanding of the lattice reconstruction in twisted TMD materials with h-BN encapsulation.
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Affiliation(s)
- Kei Kinoshita
- Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan.
| | - Yung-Chang Lin
- National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba 305-8565, Japan
| | - Rai Moriya
- Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan.
| | - Shota Okazaki
- Laboratory for Materials and Structures, Tokyo Institute of Technology, 4259 Nagatsuta, Yokohama, Kanagawa 226-8501, Japan
| | - Momoko Onodera
- Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan.
| | - Yijin Zhang
- Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan.
| | - Ryosuke Senga
- National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba 305-8565, Japan
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takao Sasagawa
- Laboratory for Materials and Structures, Tokyo Institute of Technology, 4259 Nagatsuta, Yokohama, Kanagawa 226-8501, Japan
| | - Kazu Suenaga
- The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
| | - Tomoki Machida
- Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan.
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17
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Zhong T, Zhang H, Wu M. Single Molecular Semi-Sliding Ferroelectricity/Multiferroicity. RESEARCH (WASHINGTON, D.C.) 2024; 7:0428. [PMID: 39105050 PMCID: PMC11298321 DOI: 10.34133/research.0428] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/20/2024] [Accepted: 06/25/2024] [Indexed: 08/07/2024]
Abstract
In recent years, the unique mechanism of sliding ferroelectricity with ultralow switching barriers has been experimentally verified in a series of 2-dimensional (2D) materials. However, its practical applications are hindered by the low polarizations, the challenges in synthesis of ferroelectric phases limited in specific stacking configurations, and the low density for data storage since the switching process involves large-area simultaneous sliding of a whole layer. Herein, through first-principles calculations, we propose a type of semi-sliding ferroelectricity in the single metal porphyrin molecule intercalated in 2D bilayers. An enhanced vertical polarization can be formed independent on stacking configurations and switched via sliding of the molecule accompanied by the vertical displacements of its metal ion anchored from the upper layer to the lower layer. Such semi-sliding ferroelectricity enables each molecule to store 1 bit data independently, and the density for data storage can be greatly enhanced. When the bilayer exhibits intralayer ferromagnetism and interlayer antiferromagnetic coupling, a considerable difference in Curie temperature between 2 layers and a switchable net magnetization can be formed due to the vertical polarization. At a certain range of temperature, the exchange of paramagnetic-ferromagnetic phases between 2 layers is accompanied by ferroelectric switching, leading to a hitherto unreported type of multiferroic coupling that is long-sought for efficient "magnetic reading + electric writing".
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Affiliation(s)
- Tingting Zhong
- Department of Physics, Zhejiang Sci-Tech University, Hangzhou, Zhejiang 310018, China
| | - Hong Zhang
- Department of Physics, Zhejiang Sci-Tech University, Hangzhou, Zhejiang 310018, China
| | - Menghao Wu
- School of Physics,
Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
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18
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Du S, Yang W, Gao H, Dong W, Xu B, Watanabe K, Taniguchi T, Zhao J, Zheng F, Zhou J, Zheng S. Sliding Memristor in Parallel-Stacked Hexagonal Boron Nitride. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2404177. [PMID: 38973224 DOI: 10.1002/adma.202404177] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/22/2024] [Revised: 06/04/2024] [Indexed: 07/09/2024]
Abstract
Sliding ferroelectricity in 2D materials, arising from interlayer sliding-induced interlayer hybridization and charge redistribution at the van der Waals interface, offers a means to manipulate spontaneous polarization at the atomic scale through various methods such as stacking order, interfacial contact, and electric field. However, the practical application of extending 2D sliding ferroelectricity remains challenging due to the contentious mechanisms and the complex device structures required for ferroelectric switching. Here, a sliding memristor based on a graphene/parallel-stacked hexagonal boron nitride/graphene tunneling device, featuring a stable memristive hysteresis induced by interfacial polarizations and barrier height modulations, is presented. As the tunneling current density increases, the memristive window broadens, achieving an on/off ratio of ≈103 and 2 order decrease of the trigger current density, attributed to the interlayer migration of positively charged boron ions and the formation of conductive filaments, as supported by the theoretical calculations. The findings open a path for exploring the sliding memristor via a tunneling device and bridge the gap between sliding ferroelectricity and memory applications.
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Affiliation(s)
- Shuang Du
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Wenqi Yang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Huiying Gao
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Weikang Dong
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Boyu Xu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Kenji Watanabe
- National Institute for Materials Science, 1-1 Namiki, Tsukuba, 303-0044, Japan
| | - Takashi Taniguchi
- National Institute for Materials Science, 1-1 Namiki, Tsukuba, 303-0044, Japan
| | - Jing Zhao
- School of Mechatronical Engineering, Beijing Institute of Technology, Beijing, 100081, China
| | - Fawei Zheng
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Jiadong Zhou
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Shoujun Zheng
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
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19
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Gao W, Zhi G, Zhou M, Niu T. Growth of Single Crystalline 2D Materials beyond Graphene on Non-metallic Substrates. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2311317. [PMID: 38712469 DOI: 10.1002/smll.202311317] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2023] [Revised: 03/14/2024] [Indexed: 05/08/2024]
Abstract
The advent of 2D materials has ushered in the exploration of their synthesis, characterization and application. While plenty of 2D materials have been synthesized on various metallic substrates, interfacial interaction significantly affects their intrinsic electronic properties. Additionally, the complex transfer process presents further challenges. In this context, experimental efforts are devoted to the direct growth on technologically important semiconductor/insulator substrates. This review aims to uncover the effects of substrate on the growth of 2D materials. The focus is on non-metallic substrate used for epitaxial growth and how this highlights the necessity for phase engineering and advanced characterization at atomic scale. Special attention is paid to monoelemental 2D structures with topological properties. The conclusion is drawn through a discussion of the requirements for integrating 2D materials with current semiconductor-based technology and the unique properties of heterostructures based on 2D materials. Overall, this review describes how 2D materials can be fabricated directly on non-metallic substrates and the exploration of growth mechanism at atomic scale.
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Affiliation(s)
- Wenjin Gao
- Tianmushan Laboratory, Hangzhou, 310023, China
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
- School of Physics, Beihang University, Beijing, 100191, China
| | | | - Miao Zhou
- Tianmushan Laboratory, Hangzhou, 310023, China
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
- School of Physics, Beihang University, Beijing, 100191, China
| | - Tianchao Niu
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
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20
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Jiang H, Li L, Wu Y, Duan R, Yi K, Wu L, Zhu C, Luo L, Xu M, Zheng L, Gan X, Zhao W, Wang X, Liu Z. Vapor Deposition of Bilayer 3R MoS 2 with Room-Temperature Ferroelectricity. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2400670. [PMID: 38830613 DOI: 10.1002/adma.202400670] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/14/2024] [Revised: 05/17/2024] [Indexed: 06/05/2024]
Abstract
Two-dimensional ultrathin ferroelectrics have attracted much interest due to their potential application in high-density integration of non-volatile memory devices. Recently, 2D van der Waals ferroelectric based on interlayer translation has been reported in twisted bilayer h-BN and transition metal dichalcogenides (TMDs). However, sliding ferroelectricity is not well studied in non-twisted homo-bilayer TMD grown directly by chemical vapor deposition (CVD). In this paper, for the first time, experimental observation of a room-temperature out-of-plane ferroelectric switch in semiconducting bilayer 3R MoS2 synthesized by reverse-flow CVD is reported. Piezoelectric force microscopy (PFM) hysteretic loops and first principle calculations demonstrate that the ferroelectric nature and polarization switching processes are based on interlayer sliding. The vertical Au/3R MoS2/Pt device exhibits a switchable diode effect. Polarization modulated Schottky barrier height and polarization coupling of interfacial deep states trapping/detrapping may serve in coordination to determine switchable diode effect. The room-temperature ferroelectricity of CVD-grown MoS2 will proceed with the potential wafer-scale integration of 2D TMDs in the logic circuit.
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Affiliation(s)
- Hanjun Jiang
- Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Lei Li
- Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
- Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, China
- MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, China
| | - Yao Wu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Ruihuan Duan
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Kongyang Yi
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Lishu Wu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Chao Zhu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Lei Luo
- Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Manzhang Xu
- Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
- Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, China
- MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, China
| | - Lu Zheng
- Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
- Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, China
- MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, China
| | - Xuetao Gan
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, China
| | - Wu Zhao
- School of Information Science and Technology, Northwest University, Xi'an, Shaanxi, 710127, China
| | - Xuewen Wang
- Frontiers Science Center for Flexible Electronics (FSCFE) & Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
- Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, China
- MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, China
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
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21
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Zhang C, Zhang Z, Wu Z, Li X, Wu Y, Kang J. Modulation of Polarization in Sliding Ferroelectrics by Introducing Intrinsic Electric Fields. J Phys Chem Lett 2024:8049-8056. [PMID: 39083659 DOI: 10.1021/acs.jpclett.4c01693] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/02/2024]
Abstract
The emergence of sliding ferroelectricity facilitates low-barrier ferroelectrics in two-dimensional materials, while limited electric polarizations impede practical applications. Herein, we propose an effective strategy to enlarge the polarization by introducing an intrinsic electric field, exemplified by Janus transition metal dichalcogenides (TMDs) with the first-principle calculations. The intrinsic electric field is introduced and regulated by leveraging the electronegativity differences among chalcogens. An improved polarization is achieved in the Janus TeMoS bilayer with a polarization of 1.18 pC/m, a 65% enhancement compared to normal TMD bilayers. Through differential charge density analysis, the inner mechanism is attributed to the effects of intrinsic electric fields on charge redistribution. Furthermore, the feasibility of polarization reversal is determined by evaluating switching barriers and the responses under an electric field. The provided proposal is applicable and available for broader systems and will pave the way for the development of novel electronic devices.
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Affiliation(s)
- Chenhao Zhang
- Department of Physics, Engineering Research Centre for Micro-Nano Optoelectronic Materials and Devices at Education Ministry, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, P. R. China
| | - Zongnan Zhang
- Department of Physics, Engineering Research Centre for Micro-Nano Optoelectronic Materials and Devices at Education Ministry, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, P. R. China
| | - Zhiming Wu
- Department of Physics, Engineering Research Centre for Micro-Nano Optoelectronic Materials and Devices at Education Ministry, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, P. R. China
| | - Xu Li
- Department of Physics, Engineering Research Centre for Micro-Nano Optoelectronic Materials and Devices at Education Ministry, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, P. R. China
| | - Yaping Wu
- Department of Physics, Engineering Research Centre for Micro-Nano Optoelectronic Materials and Devices at Education Ministry, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, P. R. China
| | - Junyong Kang
- Department of Physics, Engineering Research Centre for Micro-Nano Optoelectronic Materials and Devices at Education Ministry, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, P. R. China
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22
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Sett S, Debnath R, Singha A, Mandal S, Jyothsna KM, Bhakar M, Watanabe K, Taniguchi T, Raghunathan V, Sheet G, Jain M, Ghosh A. Emergent Inhomogeneity and Nonlocality in a Graphene Field-Effect Transistor on a Near-Parallel Moiré Superlattice of Transition Metal Dichalcogenides. NANO LETTERS 2024. [PMID: 39012311 DOI: 10.1021/acs.nanolett.4c01755] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/17/2024]
Abstract
At near-parallel orientation, twisted bilayers of transition metal dichalcogenides exhibit interlayer charge transfer-driven out-of-plane ferroelectricity. Here, we report detailed electrical transport in a dual-gated graphene field-effect transistor placed on a 2.1° twisted bilayer WSe2. We observe hysteretic transfer characteristics and an emergent charge inhomogeneity with multiple local Dirac points evolving with an increasing electric displacement field (D). Concomitantly, we also observe a strong nonlocal voltage signal at D ∼ 0 V/nm that decreases rapidly with increasing D. A linear scaling of the nonlocal signal with longitudinal resistance suggests edge mode transport, which we attribute to the breaking of valley symmetry of graphene due to the spatially fluctuating electric field from the underlying polarized moiré domains. A quantitative analysis suggests the emergence of finite-size domains in graphene that modulate the charge and the valley currents simultaneously. This work underlines the impact of interfacial ferroelectricity that can trigger a new generation of devices.
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Affiliation(s)
- Shaili Sett
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
| | - Rahul Debnath
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
| | - Arup Singha
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
| | - Shinjan Mandal
- Centre for Condensed Matter Theory, Department of Physics, Indian Institute of Science, Bangalore 560012, India
| | - K M Jyothsna
- Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore 560012, India
| | - Monika Bhakar
- Department of Physics, Indian Institute of Science Education and Research Mohali, Punjab 140306, India
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Varun Raghunathan
- Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore 560012, India
| | - Goutam Sheet
- Department of Physics, Indian Institute of Science Education and Research Mohali, Punjab 140306, India
| | - Manish Jain
- Centre for Condensed Matter Theory, Department of Physics, Indian Institute of Science, Bangalore 560012, India
| | - Arindam Ghosh
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
- Centre for Nanoscience and Engineering, Indian Institute of Science, Bangalore 560012, India
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23
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Yasuda K, Zalys-Geller E, Wang X, Bennett D, Cheema SS, Watanabe K, Taniguchi T, Kaxiras E, Jarillo-Herrero P, Ashoori R. Ultrafast high-endurance memory based on sliding ferroelectrics. Science 2024; 385:53-56. [PMID: 38843354 DOI: 10.1126/science.adp3575] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/21/2024] [Accepted: 05/28/2024] [Indexed: 07/06/2024]
Abstract
The persistence of voltage-switchable collective electronic phenomena down to the atomic scale has extensive implications for area- and energy-efficient electronics, especially in emerging nonvolatile memory technology. We investigate the performance of a ferroelectric field-effect transistor (FeFET) based on sliding ferroelectricity in bilayer boron nitride at room temperature. Sliding ferroelectricity represents a different form of atomically thin two-dimensional (2D) ferroelectrics, characterized by the switching of out-of-plane polarization through interlayer sliding motion. We examined the FeFET device employing monolayer graphene as the channel layer, which demonstrated ultrafast switching speeds on the nanosecond scale and high endurance exceeding 1011 switching cycles, comparable to state-of-the-art FeFET devices. These characteristics highlight the potential of 2D sliding ferroelectrics for inspiring next-generation nonvolatile memory technology.
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Affiliation(s)
- Kenji Yasuda
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02138, USA
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14850, USA
| | - Evan Zalys-Geller
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02138, USA
| | - Xirui Wang
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02138, USA
| | - Daniel Bennett
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138, USA
| | - Suraj S Cheema
- Research Laboratory of Electronics, MA Institute of Technology, Cambridge, MA, USA
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Efthimios Kaxiras
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138, USA
- Department of Physics, Harvard University, Cambridge, MA 02138, USA
| | - Pablo Jarillo-Herrero
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02138, USA
| | - Raymond Ashoori
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02138, USA
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24
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Bian R, He R, Pan E, Li Z, Cao G, Meng P, Chen J, Liu Q, Zhong Z, Li W, Liu F. Developing fatigue-resistant ferroelectrics using interlayer sliding switching. Science 2024; 385:57-62. [PMID: 38843352 DOI: 10.1126/science.ado1744] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/19/2024] [Accepted: 05/24/2024] [Indexed: 07/06/2024]
Abstract
Ferroelectric materials have switchable electrical polarization that is appealing for high-density nonvolatile memories. However, inevitable fatigue hinders practical applications of these materials. Fatigue-free ferroelectric switching could dramatically improve the endurance of such devices. We report a fatigue-free ferroelectric system based on the sliding ferroelectricity of bilayer 3R molybdenum disulfide (3R-MoS2). The memory performance of this ferroelectric device does not show the wake-up effect at low cycles or a substantial fatigue effect after 106 switching cycles under different pulse widths. The total stress time of the device under an electric field is up to 105 s, which is long relative to other devices. Our theoretical calculations reveal that the fatigue-free feature of sliding ferroelectricity is due to the immobile charge defects in sliding ferroelectricity.
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Affiliation(s)
- Renji Bian
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China
| | - Ri He
- Key Laboratory of Magnetic Materials Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Er Pan
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Zefen Li
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Guiming Cao
- School of Information Science and Technology, Xi Chang University, Xi Chang 615013, China
- Key Laboratory of Liangshan Agriculture Digital Transformation of Sichuan Provincial Education Department, Xi Chang University, Xi Chang 615013, China
| | - Peng Meng
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Jiangang Chen
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Qing Liu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Zhicheng Zhong
- Key Laboratory of Magnetic Materials Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- Department of Physics, University of Science and Technology of China, Hefei 230026, China
- Suzhou Institute for Advanced Research, University of Science and Technology of China, Suzhou 215123, China
| | - Wenwu Li
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai 200433, China
- State Key Laboratory of Photovoltaic Science and Technology, Department of Materials Science, Fudan University, Shanghai 200433, China
| | - Fucai Liu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China
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25
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Qin B, Ma C, Guo Q, Li X, Wei W, Ma C, Wang Q, Liu F, Zhao M, Xue G, Qi J, Wu M, Hong H, Du L, Zhao Q, Gao P, Wang X, Wang E, Zhang G, Liu C, Liu K. Interfacial epitaxy of multilayer rhombohedral transition-metal dichalcogenide single crystals. Science 2024; 385:99-104. [PMID: 38963849 DOI: 10.1126/science.ado6038] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/13/2024] [Accepted: 05/17/2024] [Indexed: 07/06/2024]
Abstract
Rhombohedral-stacked transition-metal dichalcogenides (3R-TMDs), which are distinct from their hexagonal counterparts, exhibit higher carrier mobility, sliding ferroelectricity, and coherently enhanced nonlinear optical responses. However, surface epitaxial growth of large multilayer 3R-TMD single crystals is difficult. We report an interfacial epitaxy methodology for their growth of several compositions, including molybdenum disulfide (MoS2), molybdenum diselenide, tungsten disulfide, tungsten diselenide, niobium disulfide, niobium diselenide, and molybdenum sulfoselenide. Feeding of metals and chalcogens continuously to the interface between a single-crystal Ni substrate and grown layers ensured consistent 3R stacking sequence and controlled thickness from a few to 15,000 layers. Comprehensive characterizations confirmed the large-scale uniformity, high crystallinity, and phase purity of these films. The as-grown 3R-MoS2 exhibited room-temperature mobilities up to 155 and 190 square centimeters per volt second for bi- and trilayers, respectively. Optical difference frequency generation with thick 3R-MoS2 showed markedly enhanced nonlinear response under a quasi-phase matching condition (five orders of magnitude greater than monolayers).
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Affiliation(s)
- Biao Qin
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing, China
| | - Chaojie Ma
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Quanlin Guo
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Xiuzhen Li
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Wenya Wei
- Guangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter, Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics, South China Normal University, Guangzhou, China
| | - Chenjun Ma
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Qinghe Wang
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Fang Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Mengze Zhao
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Guodong Xue
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Jiajie Qi
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Muhong Wu
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing, China
- Songshan Lake Materials Laboratory, Dongguan, China
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Centre for Light-Element Advanced Materials, Peking University, Beijing, China
| | - Hao Hong
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Centre for Light-Element Advanced Materials, Peking University, Beijing, China
| | - Luojun Du
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Qing Zhao
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Peng Gao
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing, China
| | - Xinqiang Wang
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Enge Wang
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing, China
- Songshan Lake Materials Laboratory, Dongguan, China
| | - Guangyu Zhang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China
- Songshan Lake Materials Laboratory, Dongguan, China
| | - Can Liu
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing, China
- Songshan Lake Materials Laboratory, Dongguan, China
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26
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Ding P, Yan J, Wang J, Han X, Yang W, Chen H, Zhang D, Huang M, Zhao J, Yang S, Xue TT, Liu L, Dai Y, Hou Y, Zhang S, Xu X, Wang Y, Huang Y. Manipulation of Moiré Superlattice in Twisted Monolayer-multilayer Graphene by Moving Nanobubbles. NANO LETTERS 2024; 24:8208-8215. [PMID: 38913825 DOI: 10.1021/acs.nanolett.4c02548] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/26/2024]
Abstract
In the heterostructure of two-dimensional (2D) materials, many novel physics phenomena are strongly dependent on the Moiré superlattice. How to achieve the continuous manipulation of the Moiré superlattice in the same sample is very important to study the evolution of various physical properties. Here, in minimally twisted monolayer-multilayer graphene, we found that bubble-induced strain has a huge impact on the Moiré superlattice. By employing the AFM tip to dynamically and continuously move the nanobubble, we realized the modulation of the Moiré superlattice, like the evolution of regular triangular domains into long strip domain structures with single or double domain walls. We also achieved controllable modulation of the Moiré superlattice by moving multiple nanobubbles and establishing the coupling of nanobubbles. Our work presents a flexible method for continuous and controllable manipulation of Moiré superlattices, which will be widely used to study novel physical properties in 2D heterostructures.
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Affiliation(s)
- Pengfei Ding
- School of Physics, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Advanced Research Institute of Multidisciplinary Sciences, Beijing 100081, China
| | - Jiahao Yan
- School of Physics, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Advanced Research Institute of Multidisciplinary Sciences, Beijing 100081, China
| | - Jiakai Wang
- School of Physics, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Advanced Research Institute of Multidisciplinary Sciences, Beijing 100081, China
| | - Xu Han
- School of Physics, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Advanced Research Institute of Multidisciplinary Sciences, Beijing 100081, China
| | - Wenchen Yang
- School of Physics, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Advanced Research Institute of Multidisciplinary Sciences, Beijing 100081, China
| | - Hui Chen
- School of Physics, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Advanced Research Institute of Multidisciplinary Sciences, Beijing 100081, China
| | - Decheng Zhang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Mengting Huang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Jinghan Zhao
- School of Physics, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Advanced Research Institute of Multidisciplinary Sciences, Beijing 100081, China
| | - Shiqi Yang
- School of Physics, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Advanced Research Institute of Multidisciplinary Sciences, Beijing 100081, China
| | - Tong-Tong Xue
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Liwei Liu
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Yunyun Dai
- School of Physics, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Advanced Research Institute of Multidisciplinary Sciences, Beijing 100081, China
| | - Yuan Hou
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Shuai Zhang
- Applied Mechanics Laboratory, Department of Engineering Mechanics, Tsinghua University, Beijing 100084, China
| | - Xiaolong Xu
- School of Physics, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Advanced Research Institute of Multidisciplinary Sciences, Beijing 100081, China
| | - Yeliang Wang
- School of Physics, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Advanced Research Institute of Multidisciplinary Sciences, Beijing 100081, China
- BIT Chongqing Institute of Microelectronics and Microsystems, Chongqing 100190, China
| | - Yuan Huang
- School of Physics, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Advanced Research Institute of Multidisciplinary Sciences, Beijing 100081, China
- BIT Chongqing Institute of Microelectronics and Microsystems, Chongqing 100190, China
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27
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Cao W, Deb S, Stern MV, Raab N, Urbakh M, Hod O, Kronik L, Shalom MB. Polarization Saturation in Multilayered Interfacial Ferroelectrics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2400750. [PMID: 38662941 DOI: 10.1002/adma.202400750] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/15/2024] [Revised: 04/10/2024] [Indexed: 05/04/2024]
Abstract
Van der Waals polytypes of broken inversion and mirror symmetries have been recently shown to exhibit switchable electric polarization even at the ultimate two-layer thin limit. Their out-of-plane polarization has been found to accumulate in a ladder-like fashion with each successive layer, offering 2D building blocks for the bottom-up construction of 3D ferroelectrics. Here, it is demonstrated experimentally that beyond a critical stack thickness, the accumulated polarization in rhombohedral polytypes of molybdenum disulfide saturates. The underlying saturation mechanism, deciphered via density functional theory and self-consistent Poisson-Schrödinger calculations, point to a purely electronic redistribution involving: 1. Polarization-induced bandgap closure that allows for cross-stack charge transfer and the emergence of free surface charge; 2. Reduction of the polarization saturation value, as well as the critical thickness at which it is obtained, by the presence of free carriers. The resilience of polar layered structures to atomic surface reconstruction, which is essentially unavoidable in polar 3D crystals, potentially allows for the design of new devices with mobile surface charges. The findings, which are of general nature, should be accounted for when designing switching and/or conductive devices based on ferroelectric layered materials.
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Affiliation(s)
- Wei Cao
- Department of Physical Chemistry, School of Chemistry, The Raymond and Beverly Sackler Faculty of Exact Sciences and The Sackler Center for Computational Molecular and Materials Science, Tel Aviv University, Tel Aviv, 6997801, Israel
| | - Swarup Deb
- School of Physics and Astronomy, Tel Aviv University, Tel Aviv, 6997801, Israel
| | - Maayan Vizner Stern
- School of Physics and Astronomy, Tel Aviv University, Tel Aviv, 6997801, Israel
| | - Noam Raab
- School of Physics and Astronomy, Tel Aviv University, Tel Aviv, 6997801, Israel
| | - Michael Urbakh
- Department of Physical Chemistry, School of Chemistry, The Raymond and Beverly Sackler Faculty of Exact Sciences and The Sackler Center for Computational Molecular and Materials Science, Tel Aviv University, Tel Aviv, 6997801, Israel
| | - Oded Hod
- Department of Physical Chemistry, School of Chemistry, The Raymond and Beverly Sackler Faculty of Exact Sciences and The Sackler Center for Computational Molecular and Materials Science, Tel Aviv University, Tel Aviv, 6997801, Israel
| | - Leeor Kronik
- Department of Molecular Chemistry and Materials Science, Weizmann Institute of Science, Rehovoth, 7610001, Israel
| | - Moshe Ben Shalom
- School of Physics and Astronomy, Tel Aviv University, Tel Aviv, 6997801, Israel
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28
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Liang X, Lv P, Xiong Y, Chen X, Fu D, Feng Y, Wang X, Chen X, Xu G, Kan E, Xu F, Zeng H. Moiré Engineering of Spin-Orbit Torque by Twisted WS 2 Homobilayers. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2313059. [PMID: 38871341 DOI: 10.1002/adma.202313059] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/03/2023] [Revised: 05/28/2024] [Indexed: 06/15/2024]
Abstract
Artificial moiré superlattices created by stacking 2D crystals have emerged as a powerful platform with unprecedented material-engineering capabilities. While moiré superlattices are reported to host a number of novel quantum states, their potential for spintronic applications remains largely unexplored. Here, the effective manipulation of spin-orbit torque (SOT) is demonstrated using moiré superlattices in ferromagnetic devices comprised of twisted WS2/WS2 homobilayer (t-WS2) and CoFe/Pt thin films by altering twisting angle (θ) and gate voltage. Notably, a substantial enhancement of up to 44.5% is observed in SOT conductivity at θ ≈ 8.3°. Furthermore, compared to the WS2 monolayer and untwisted WS2/WS2 bilayers, the moiré superlattices in t-WS2 enable a greater gate-voltage tunability of SOT conductivity. These results are related to the generation of the interfacial moiré magnetic field by the real-space Berry phase in moiré superlattices, which modulates the absorption of the spin-Hall current arising from Pt through the magnetic proximity effect. This study highlights the moiré physics as a new building block for designing enhanced spintronic devices.
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Affiliation(s)
- Xiaorong Liang
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics and Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Penghao Lv
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics and Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Yunhai Xiong
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics and Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Xi Chen
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics and Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Di Fu
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics and Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Yiping Feng
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics and Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Xusheng Wang
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics and Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Xiang Chen
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics and Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Guizhou Xu
- MIIT Key Laboratory of Advanced Metallic and Intermetallic Materials Technology, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Erjun Kan
- MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing, School of Physics, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Feng Xu
- MIIT Key Laboratory of Advanced Metallic and Intermetallic Materials Technology, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Haibo Zeng
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics and Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
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29
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Chen M, Xie Y, Cheng B, Yang Z, Li XZ, Chen F, Li Q, Xie J, Watanabe K, Taniguchi T, He WY, Wu M, Liang SJ, Miao F. Selective and quasi-continuous switching of ferroelectric Chern insulator devices for neuromorphic computing. NATURE NANOTECHNOLOGY 2024; 19:962-969. [PMID: 38965346 DOI: 10.1038/s41565-024-01698-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/12/2023] [Accepted: 05/19/2024] [Indexed: 07/06/2024]
Abstract
Quantum materials exhibit dissipationless topological edge state transport with quantized Hall conductance, offering notable potential for fault-tolerant computing technologies. However, the development of topological edge state-based computing devices remains a challenge. Here we report the selective and quasi-continuous ferroelectric switching of topological Chern insulator devices, showcasing a proof-of-concept demonstration in noise-immune neuromorphic computing. We fabricate this ferroelectric Chern insulator device by encapsulating magic-angle twisted bilayer graphene with doubly aligned h-BN layers and observe the coexistence of the interfacial ferroelectricity and the topological Chern insulating states. The observed ferroelectricity exhibits an anisotropic dependence on the in-plane magnetic field. By tuning the amplitude of the gate voltage pulses, we achieve ferroelectric switching between any pair of Chern insulating states in the presence of a finite magnetic field, resulting in 1,280 ferroelectric states with distinguishable Hall resistance levels on a single device. Furthermore, we demonstrate deterministic switching between two arbitrary levels among the record-high number of ferroelectric states. This unique switching capability enables the implementation of a convolutional neural network resistant to external noise, utilizing the quantized Hall conductance levels of the Chern insulator device as weights. Our study provides a promising avenue towards the development of topological quantum neuromorphic computing, where functionality and performance can be drastically enhanced by topological quantum materials.
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Affiliation(s)
- Moyu Chen
- Institute of Brain-Inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Yongqin Xie
- Institute of Brain-Inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Bin Cheng
- Institute of Interdisciplinary Physical Sciences, School of Science, Nanjing University of Science and Technology, Nanjing, China.
| | - Zaizheng Yang
- Institute of Brain-Inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Xin-Zhi Li
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, China
| | - Fanqiang Chen
- Institute of Brain-Inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Qiao Li
- Institute of Brain-Inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Jiao Xie
- Institute of Brain-Inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Wen-Yu He
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, China
| | - Menghao Wu
- School of Physics and School of Chemistry, Institute of Theoretical Chemistry, Huazhong University of Science and Technology, Wuhan, China
| | - Shi-Jun Liang
- Institute of Brain-Inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
| | - Feng Miao
- Institute of Brain-Inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
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30
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Zeng Z, Tian Z, Wang Y, Ge C, Strauß F, Braun K, Michel P, Huang L, Liu G, Li D, Scheele M, Chen M, Pan A, Wang X. Dual polarization-enabled ultrafast bulk photovoltaic response in van der Waals heterostructures. Nat Commun 2024; 15:5355. [PMID: 38918419 PMCID: PMC11199638 DOI: 10.1038/s41467-024-49760-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/29/2023] [Accepted: 06/19/2024] [Indexed: 06/27/2024] Open
Abstract
The bulk photovoltaic effect (BPVE) originating from spontaneous charge polarizations can reach high conversion efficiency exceeding the Shockley-Queisser limit. Emerging van der Waals (vdW) heterostructures provide the ideal platform for BPVE due to interfacial interactions naturally breaking the crystal symmetries of the individual constituents and thus inducing charge polarizations. Here, we show an approach to obtain ultrafast BPVE by taking advantage of dual interfacial polarizations in vdW heterostructures. While the in-plane polarization gives rise to the BPVE in the overlayer, the charge carrier transfer assisted by the out-of-plane polarization further accelerates the interlayer electronic transport and enhances the BPVE. We illustrate the concept in MoS2/black phosphorus heterostructures, where the experimentally observed intrinsic BPVE response time achieves 26 ps, orders of magnitude faster than that of conventional non-centrosymmetric materials. Moreover, the heterostructure device possesses an extrinsic response time of approximately 2.2 ns and a bulk photovoltaic coefficient of 0.6 V-1, which is among the highest values for vdW BPV devices reported so far. Our study thus points to an effective way of designing ultrafast BPVE for high-speed photodetection.
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Grants
- the National Key Research and Development Program of Ministry of Science and Technology (Nos. 2022YFA1204300), the National Natural Science Foundation of China (Nos. 52022029, 52302175, 52221001, U23A20570, 92263107, 62090035, 12174098), the Hunan Provincial Natural Science Foundation of China (Nos. 2023JJ40138, 2022JJ30142),
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Affiliation(s)
- Zhouxiaosong Zeng
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
- School of Physics and Electronics, Hunan University, Changsha, 410082, China
- Institute of Physical and Theoretical Chemistry and LISA, University of Tübingen, Auf der Morgenstelle 18, 72076, Tübingen, Germany
| | - Zhiqiang Tian
- Key Laboratory for Matter Microstructure and Function of Hunan Province, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Center for Quantum Effects and Applications (SICQEA), School of Physics and Electronics, Hunan Normal University, Changsha, 410081, China
| | - Yufan Wang
- School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Cuihuan Ge
- School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Fabian Strauß
- Institute of Physical and Theoretical Chemistry and LISA, University of Tübingen, Auf der Morgenstelle 18, 72076, Tübingen, Germany
| | - Kai Braun
- Institute of Physical and Theoretical Chemistry and LISA, University of Tübingen, Auf der Morgenstelle 18, 72076, Tübingen, Germany
| | - Patrick Michel
- Institute of Physical and Theoretical Chemistry and LISA, University of Tübingen, Auf der Morgenstelle 18, 72076, Tübingen, Germany
| | - Lanyu Huang
- School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Guixian Liu
- School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Dong Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
| | - Marcus Scheele
- Institute of Physical and Theoretical Chemistry and LISA, University of Tübingen, Auf der Morgenstelle 18, 72076, Tübingen, Germany
| | - Mingxing Chen
- Key Laboratory for Matter Microstructure and Function of Hunan Province, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Center for Quantum Effects and Applications (SICQEA), School of Physics and Electronics, Hunan Normal University, Changsha, 410081, China.
- State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083, China.
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China.
- Key Laboratory for Matter Microstructure and Function of Hunan Province, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Center for Quantum Effects and Applications (SICQEA), School of Physics and Electronics, Hunan Normal University, Changsha, 410081, China.
| | - Xiao Wang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China.
- School of Physics and Electronics, Hunan University, Changsha, 410082, China.
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31
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Gao B, Wang W, Meng Y, Du C, Long Y, Zhang Y, Shao H, Lai Z, Wang W, Xie P, Yip S, Zhong X, Ho JC. Electrical Polarity Modulation in V-Doped Monolayer WS 2 for Homogeneous CMOS Inverters. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2402217. [PMID: 38924273 DOI: 10.1002/smll.202402217] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/20/2024] [Revised: 05/14/2024] [Indexed: 06/28/2024]
Abstract
As demand for higher integration density and smaller devices grows, silicon-based complementary metal-oxide-semiconductor (CMOS) devices will soon reach their ultimate limits. 2D transition metal dichalcogenides (TMDs) semiconductors, known for excellent electrical performance and stable atomic structure, are seen as promising materials for future integrated circuits. However, controlled and reliable doping of 2D TMDs, a key step for creating homogeneous CMOS logic components, remains a challenge. In this study, a continuous electrical polarity modulation of monolayer WS2 from intrinsic n-type to ambipolar, then to p-type, and ultimately to a quasi-metallic state is achieved simply by introducing controllable amounts of vanadium (V) atoms into the WS2 lattice as p-type dopants during chemical vapor deposition (CVD). The achievement of purely p-type field-effect transistors (FETs) is particularly noteworthy based on the 4.7 at% V-doped monolayer WS2, demonstrating a remarkable on/off current ratio of 105. Expanding on this triumph, the first initial prototype of ultrathin homogeneous CMOS inverters based on monolayer WS2 is being constructed. These outcomes validate the feasibility of constructing homogeneous CMOS devices through the atomic doping process of 2D materials, marking a significant milestone for the future development of integrated circuits.
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Affiliation(s)
- Boxiang Gao
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Weijun Wang
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - You Meng
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Congcong Du
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
- Qingyuan Innovation Laboratory, Quanzhou, 362801, China
| | - Yunchen Long
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Yuxuan Zhang
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - He Shao
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Zhengxun Lai
- College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
| | - Wei Wang
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Pengshan Xie
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - SenPo Yip
- Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka, 816-8580, Japan
| | - Xiaoyan Zhong
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
- City University of Hong Kong Matter Science Research Institute (Futian, Shenzhen), Shenzhen, 518048, China
- Nanomanufacturing Laboratory (NML), City University of Hong Kong Shenzhen Research Institute, Shenzhen, 518057, China
| | - Johnny C Ho
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
- Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka, 816-8580, Japan
- State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Hong Kong SAR, 999077, China
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32
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HuangFu C, Zhou Y, Ke C, Liao J, Wang J, Liu H, Liu D, Liu S, Xie L, Jiao L. Out-of-Plane Ferroelectricity in Two-Dimensional 1T‴-MoS 2 Above Room Temperature. ACS NANO 2024; 18:14708-14715. [PMID: 38781476 DOI: 10.1021/acsnano.4c03608] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2024]
Abstract
Two-dimensional (2D) molybdenum disulfide (MoS2), one of the most extensively studied van der Waals (vdW) materials, is a significant candidate for electronic materials in the post-Moore era. MoS2 exhibits various phases, among which the 1T‴ phase possesses noncentrosymmetry. 1T‴-MoS2 was theoretically predicted to be ferroelectric a decade ago, but this has not been experimentally confirmed until now. Here, we have prepared high-purity 2D 1T‴-MoS2 crystals and experimentally confirmed the room-temperature out-of-plane ferroelectricity. The noncentrosymmetric crystal structure in 2D 1T‴-MoS2 was convinced by atomically resolved transmission electron microscopic imaging and second harmonic generation (SHG) measurements. Further, the ferroelectric polarization states in 2D 1T‴-MoS2 can be switched using piezoresponse force microscopy (PFM) and electrical gating in field-effect transistors (FETs). The ferroelectric-to-paraelectric transition temperature is measured to be about 350 K. Theoretical calculations have revealed that the ferroelectricity of 2D 1T‴-MoS2 originates from the intralayer charge transfer of S atoms within the layer. The discovery of intrinsic ferroelectricity in the 1T‴ phase of MoS2 further enriches the properties of this important vdW material, providing more possibilities for its application in the field of next-generation electronic devices.
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Affiliation(s)
- Changan HuangFu
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084, China
| | - Yaming Zhou
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084, China
| | - Changming Ke
- Institute of Natural Sciences, Westlake Institute for Advanced Study, Hangzhou 310024, Zhejiang, China
- Department of Physics, School of Science, Westlake University, Hangzhou 310024, Zhejiang, China
| | - Junyi Liao
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084, China
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jiangcai Wang
- State Key Laboratory of Tribology in Advanced Equipment, Tsinghua University, Beijing 100084, China
| | - Huan Liu
- State Key Laboratory of Tribology in Advanced Equipment, Tsinghua University, Beijing 100084, China
| | - Dameng Liu
- State Key Laboratory of Tribology in Advanced Equipment, Tsinghua University, Beijing 100084, China
| | - Shi Liu
- Institute of Natural Sciences, Westlake Institute for Advanced Study, Hangzhou 310024, Zhejiang, China
- Department of Physics, School of Science, Westlake University, Hangzhou 310024, Zhejiang, China
| | - Liming Xie
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Liying Jiao
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084, China
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33
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Van Winkle M, Dowlatshahi N, Khaloo N, Iyer M, Craig IM, Dhall R, Taniguchi T, Watanabe K, Bediako DK. Engineering interfacial polarization switching in van der Waals multilayers. NATURE NANOTECHNOLOGY 2024; 19:751-757. [PMID: 38504024 DOI: 10.1038/s41565-024-01642-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/28/2023] [Accepted: 02/29/2024] [Indexed: 03/21/2024]
Abstract
In conventional ferroelectric materials, polarization is an intrinsic property limited by bulk crystallographic structure and symmetry. Recently, it has been demonstrated that polar order can also be accessed using inherently non-polar van der Waals materials through layer-by-layer assembly into heterostructures, wherein interfacial interactions can generate spontaneous, switchable polarization. Here we show that deliberate interlayer rotations in multilayer van der Waals heterostructures modulate both the spatial ordering and switching dynamics of polar domains. The engendered tunability is unparalleled in conventional bulk ferroelectrics or polar bilayers. By means of operando transmission electron microscopy we show how alterations of the relative rotations of three WSe2 layers produce structural polytypes with distinct arrangements of polar domains with either a global or localized switching response. Furthermore, the presence of uniaxial strain generates structural anisotropy that yields a range of switching behaviours, coercivities and even tunable biased responses. We also provide evidence of mechanical coupling between the two interfaces of the trilayer, a key consideration for the control of switching dynamics in polar multilayer structures more broadly.
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Affiliation(s)
- Madeline Van Winkle
- Department of Chemistry, University of California, Berkeley, Berkeley, CA, USA
| | - Nikita Dowlatshahi
- Department of Chemistry, University of California, Berkeley, Berkeley, CA, USA
| | - Nikta Khaloo
- Department of Chemistry, University of California, Berkeley, Berkeley, CA, USA
| | - Mrinalni Iyer
- Department of Chemistry, University of California, Berkeley, Berkeley, CA, USA
- Department of Chemistry, University of Minnesota, Minneapolis, MN, USA
| | - Isaac M Craig
- Department of Chemistry, University of California, Berkeley, Berkeley, CA, USA
| | - Rohan Dhall
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, Tsukuba, Japan
| | - D Kwabena Bediako
- Department of Chemistry, University of California, Berkeley, Berkeley, CA, USA.
- Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
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34
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Zhang XW, Wang C, Liu X, Fan Y, Cao T, Xiao D. Polarization-driven band topology evolution in twisted MoTe 2 and WSe 2. Nat Commun 2024; 15:4223. [PMID: 38762554 PMCID: PMC11102499 DOI: 10.1038/s41467-024-48511-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/28/2023] [Accepted: 05/02/2024] [Indexed: 05/20/2024] Open
Abstract
Motivated by recent experimental observations of opposite Chern numbers in R-type twisted MoTe2 and WSe2 homobilayers, we perform large-scale density-functional-theory calculations with machine learning force fields to investigate moiré band topology across a range of twist angles in both materials. We find that the Chern numbers of the moiré frontier bands change sign as a function of twist angle, and this change is driven by the competition between moiré ferroelectricity and piezoelectricity. Our large-scale calculations, enabled by machine learning methods, reveal crucial insights into interactions across different scales in twisted bilayer systems. The interplay between atomic-level relaxation effects and moiré-scale electrostatic potential variation opens new avenues for the design of intertwined topological and correlated states, including the possibility of mimicking higher Landau level physics in the absence of magnetic field.
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Affiliation(s)
- Xiao-Wei Zhang
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, 98195, USA
| | - Chong Wang
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, 98195, USA
| | - Xiaoyu Liu
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, 98195, USA
| | - Yueyao Fan
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, 98195, USA
| | - Ting Cao
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, 98195, USA.
| | - Di Xiao
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, 98195, USA.
- Department of Physics, University of Washington, Seattle, WA, 98195, USA.
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35
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Chang C, Zhang X, Li W, Guo Q, Feng Z, Huang C, Ren Y, Cai Y, Zhou X, Wang J, Tang Z, Ding F, Wei W, Liu K, Xu X. Remote epitaxy of single-crystal rhombohedral WS 2 bilayers. Nat Commun 2024; 15:4130. [PMID: 38755189 PMCID: PMC11099013 DOI: 10.1038/s41467-024-48522-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/11/2024] [Accepted: 05/03/2024] [Indexed: 05/18/2024] Open
Abstract
Compared to transition metal dichalcogenide (TMD) monolayers, rhombohedral-stacked (R-stacked) TMD bilayers exhibit remarkable electrical performance, enhanced nonlinear optical response, giant piezo-photovoltaic effect and intrinsic interfacial ferroelectricity. However, from a thermodynamics perspective, the formation energies of R-stacked and hexagonal-stacked (H-stacked) TMD bilayers are nearly identical, leading to mixed stacking of both H- and R-stacked bilayers in epitaxial films. Here, we report the remote epitaxy of centimetre-scale single-crystal R-stacked WS2 bilayer films on sapphire substrates. The bilayer growth is realized by a high flux feeding of the tungsten source at high temperature on substrates. The R-stacked configuration is achieved by the symmetry breaking in a-plane sapphire, where the influence of atomic steps passes through the lower TMD layer and controls the R-stacking of the upper layer. The as-grown R-stacked bilayers show up-to-30-fold enhancements in carrier mobility (34 cm2V-1s-1), nearly doubled circular helicity (61%) and interfacial ferroelectricity, in contrast to monolayer films. Our work reveals a growth mechanism to obtain stacking-controlled bilayer TMD single crystals, and promotes large-scale applications of R-stacked TMD.
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Affiliation(s)
- Chao Chang
- Guangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter, Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics, South China Normal University, Guangzhou, 510006, China
- Guangdong-Hong Kong Joint Laboratory of Quantum Matter, Frontier Research Institute for Physics, South China Normal University, Guangzhou, 510006, China
| | - Xiaowen Zhang
- Guangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter, Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics, South China Normal University, Guangzhou, 510006, China
- Guangdong-Hong Kong Joint Laboratory of Quantum Matter, Frontier Research Institute for Physics, South China Normal University, Guangzhou, 510006, China
| | - Weixuan Li
- Guangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter, Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics, South China Normal University, Guangzhou, 510006, China
- Guangdong-Hong Kong Joint Laboratory of Quantum Matter, Frontier Research Institute for Physics, South China Normal University, Guangzhou, 510006, China
| | - Quanlin Guo
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, 100871, Beijing, China
| | - Zuo Feng
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, 100871, Beijing, China
| | - Chen Huang
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, 100871, Beijing, China
| | - Yunlong Ren
- Guangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter, Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics, South China Normal University, Guangzhou, 510006, China
- Guangdong-Hong Kong Joint Laboratory of Quantum Matter, Frontier Research Institute for Physics, South China Normal University, Guangzhou, 510006, China
- Songshan Lake Materials Laboratory, Institute of Physics, Chinese Academy of Sciences, Dongguan, 523808, China
| | - Yingying Cai
- Guangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter, Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics, South China Normal University, Guangzhou, 510006, China
- Guangdong-Hong Kong Joint Laboratory of Quantum Matter, Frontier Research Institute for Physics, South China Normal University, Guangzhou, 510006, China
| | - Xu Zhou
- Guangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter, Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics, South China Normal University, Guangzhou, 510006, China
- Guangdong-Hong Kong Joint Laboratory of Quantum Matter, Frontier Research Institute for Physics, South China Normal University, Guangzhou, 510006, China
| | - Jinhuan Wang
- Guangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter, Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics, South China Normal University, Guangzhou, 510006, China
- Guangdong-Hong Kong Joint Laboratory of Quantum Matter, Frontier Research Institute for Physics, South China Normal University, Guangzhou, 510006, China
| | - Zhilie Tang
- Guangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter, Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics, South China Normal University, Guangzhou, 510006, China
- Guangdong-Hong Kong Joint Laboratory of Quantum Matter, Frontier Research Institute for Physics, South China Normal University, Guangzhou, 510006, China
| | - Feng Ding
- Faculty of Materials Science and Engineering/Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China
| | - Wenya Wei
- Guangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter, Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics, South China Normal University, Guangzhou, 510006, China.
- Guangdong-Hong Kong Joint Laboratory of Quantum Matter, Frontier Research Institute for Physics, South China Normal University, Guangzhou, 510006, China.
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, 100871, Beijing, China.
- Songshan Lake Materials Laboratory, Institute of Physics, Chinese Academy of Sciences, Dongguan, 523808, China.
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Centre for Light-Element Advanced Materials, Peking University, 100871, Beijing, China.
| | - Xiaozhi Xu
- Guangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter, Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics, South China Normal University, Guangzhou, 510006, China.
- Guangdong-Hong Kong Joint Laboratory of Quantum Matter, Frontier Research Institute for Physics, South China Normal University, Guangzhou, 510006, China.
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36
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Chen C, Zhou Y, Tong L, Pang Y, Xu J. Emerging 2D Ferroelectric Devices for In-Sensor and In-Memory Computing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2400332. [PMID: 38739927 DOI: 10.1002/adma.202400332] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/08/2024] [Revised: 04/19/2024] [Indexed: 05/16/2024]
Abstract
The quantity of sensor nodes within current computing systems is rapidly increasing in tandem with the sensing data. The presence of a bottleneck in data transmission between the sensors, computing, and memory units obstructs the system's efficiency and speed. To minimize the latency of data transmission between units, novel in-memory and in-sensor computing architectures are proposed as alternatives to the conventional von Neumann architecture, aiming for data-intensive sensing and computing applications. The integration of 2D materials and 2D ferroelectric materials has been expected to build these novel sensing and computing architectures due to the dangling-bond-free surface, ultra-fast polarization flipping, and ultra-low power consumption of the 2D ferroelectrics. Here, the recent progress of 2D ferroelectric devices for in-sensing and in-memory neuromorphic computing is reviewed. Experimental and theoretical progresses on 2D ferroelectric devices, including passive ferroelectrics-integrated 2D devices and active ferroelectrics-integrated 2D devices, are reviewed followed by the integration of perception, memory, and computing application. Notably, 2D ferroelectric devices have been used to simulate synaptic weights, neuronal model functions, and neural networks for image processing. As an emerging device configuration, 2D ferroelectric devices have the potential to expand into the sensor-memory and computing integration application field, leading to new possibilities for modern electronics.
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Affiliation(s)
- Chunsheng Chen
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China
| | - Yaoqiang Zhou
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China
| | - Lei Tong
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China
| | - Yue Pang
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China
| | - Jianbin Xu
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China
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37
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Dai DD, Fu L. Strong-Coupling Phases of Trions and Excitons in Electron-Hole Bilayers at Commensurate Densities. PHYSICAL REVIEW LETTERS 2024; 132:196202. [PMID: 38804948 DOI: 10.1103/physrevlett.132.196202] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/26/2023] [Accepted: 03/28/2024] [Indexed: 05/29/2024]
Abstract
We introduce density imbalanced electron-hole bilayers at a commensurate 2:1 density ratio as a platform for realizing novel phases of electrons, excitons, and trions. Through the independently tunable carrier densities and interlayer spacing, competition between kinetic energy, intralayer repulsion, and interlayer attraction yields a rich phase diagram. By a combination of theoretical analysis and numerical calculation, we find a variety of strong-coupling phases in different parameter regions, including quantum crystals of electrons, excitons, and trions. We also propose an "electron-exciton supersolid" phase that features electron crystallization and exciton superfluidity simultaneously. The material realization and experimental signature of these phases are discussed in the context of semiconductor transition metal dichalcogenide bilayers.
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Affiliation(s)
- David D Dai
- Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| | - Liang Fu
- Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
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38
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Zhou BT, Pathak V, Franz M. Quantum-Geometric Origin of Out-of-Plane Stacking Ferroelectricity. PHYSICAL REVIEW LETTERS 2024; 132:196801. [PMID: 38804928 DOI: 10.1103/physrevlett.132.196801] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/01/2023] [Revised: 11/16/2023] [Accepted: 04/10/2024] [Indexed: 05/29/2024]
Abstract
Stacking ferroelectricity (SFE) has been discovered in a wide range of van der Waals materials and holds promise for applications, including photovoltaics and high-density memory devices. We show that the microscopic origin of out-of-plane stacking ferroelectric polarization can be generally understood as a consequence of a nontrivial Berry phase borne out of an effective Su-Schrieffer-Heeger model description with broken sublattice symmetry, thus elucidating the quantum-geometric origin of polarization in the extremely nonperiodic bilayer limit. Our theory applies to known stacking ferroelectrics such as bilayer transition-metal dichalcogenides in 3R and T_{d} phases, as well as general AB-stacked honeycomb bilayers with staggered sublattice potential. Our explanatory and self-consistent framework based on the quantum-geometric perspective establishes quantitative understanding of out-of-plane SFE materials beyond symmetry principles.
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Affiliation(s)
- Benjamin T Zhou
- Department of Physics and Astronomy & Stewart Blusson Quantum Matter Institute, University of British Columbia, Vancouver, British Columbia V6T 1Z4, Canada
| | - Vedangi Pathak
- Department of Physics and Astronomy & Stewart Blusson Quantum Matter Institute, University of British Columbia, Vancouver, British Columbia V6T 1Z4, Canada
| | - Marcel Franz
- Department of Physics and Astronomy & Stewart Blusson Quantum Matter Institute, University of British Columbia, Vancouver, British Columbia V6T 1Z4, Canada
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39
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Li S, Wang F, Wang Y, Yang J, Wang X, Zhan X, He J, Wang Z. Van der Waals Ferroelectrics: Theories, Materials, and Device Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2301472. [PMID: 37363893 DOI: 10.1002/adma.202301472] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/15/2023] [Revised: 06/19/2023] [Indexed: 06/28/2023]
Abstract
In recent years, an increasing number of 2D van der Waals (vdW) materials are theory-predicted or laboratory-validated to possess in-plane (IP) and/or out-of-plane (OOP) spontaneous ferroelectric polarization. Due to their dangling-bond-free surfaces, interlayer charge coupling, robust polarization, tunable energy band structures, and compatibility with silicon-based technologies, vdW ferroelectric materials exhibit great promise in ferroelectric memories, neuromorphic computing, nanogenerators, photovoltaic devices, spintronic devices, and so on. Here, the very recent advances in the field of vdW ferroelectrics (FEs) are reviewed. First, theories of ferroelectricity are briefly discussed. Then, a comprehensive summary of the non-stacking vdW ferroelectric materials is provided based on their crystal structures and the emerging sliding ferroelectrics. In addition, their potential applications in various branches/frontier fields are enumerated, with a focus on artificial intelligence. Finally, the challenges and development prospects of vdW ferroelectrics are discussed.
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Affiliation(s)
- Shuhui Li
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Feng Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Yanrong Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Jia Yang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Xinyuan Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Xueying Zhan
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Jun He
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Zhenxing Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
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40
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Wang L, Qi J, Wei W, Wu M, Zhang Z, Li X, Sun H, Guo Q, Cao M, Wang Q, Zhao C, Sheng Y, Liu Z, Liu C, Wu M, Xu Z, Wang W, Hong H, Gao P, Wu M, Wang ZJ, Xu X, Wang E, Ding F, Zheng X, Liu K, Bai X. Bevel-edge epitaxy of ferroelectric rhombohedral boron nitride single crystal. Nature 2024; 629:74-79. [PMID: 38693415 DOI: 10.1038/s41586-024-07286-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/17/2023] [Accepted: 03/08/2024] [Indexed: 05/03/2024]
Abstract
Within the family of two-dimensional dielectrics, rhombohedral boron nitride (rBN) is considerably promising owing to having not only the superior properties of hexagonal boron nitride1-4-including low permittivity and dissipation, strong electrical insulation, good chemical stability, high thermal conductivity and atomic flatness without dangling bonds-but also useful optical nonlinearity and interfacial ferroelectricity originating from the broken in-plane and out-of-plane centrosymmetry5-23. However, the preparation of large-sized single-crystal rBN layers remains a challenge24-26, owing to the requisite unprecedented growth controls to coordinate the lattice orientation of each layer and the sliding vector of every interface. Here we report a facile methodology using bevel-edge epitaxy to prepare centimetre-sized single-crystal rBN layers with exact interlayer ABC stacking on a vicinal nickel surface. We realized successful accurate fabrication over a single-crystal nickel substrate with bunched step edges of the terrace facet (100) at the bevel facet (110), which simultaneously guided the consistent boron-nitrogen bond orientation in each BN layer and the rhombohedral stacking of BN layers via nucleation near each bevel facet. The pure rhombohedral phase of the as-grown BN layers was verified, and consequently showed robust, homogeneous and switchable ferroelectricity with a high Curie temperature. Our work provides an effective route for accurate stacking-controlled growth of single-crystal two-dimensional layers and presents a foundation for applicable multifunctional devices based on stacked two-dimensional materials.
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Affiliation(s)
- Li Wang
- Institute of Physics, Chinese Academy of Sciences, Beijing, China.
| | - Jiajie Qi
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Wenya Wei
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics, South China Normal University, Guangzhou, China
| | - Mengqi Wu
- School of Engineering, Westlake University, Hangzhou, China
| | - Zhibin Zhang
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Xiaomin Li
- Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Huacong Sun
- Institute of Physics, Chinese Academy of Sciences, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China
| | - Quanlin Guo
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Meng Cao
- Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Qinghe Wang
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Chao Zhao
- Shenzhen Institute of Advanced Technology, Shenzhen, China
| | - Yuxuan Sheng
- School of Physics, Huazhong University of Science and Technology, Wuhan, China
| | - Zhetong Liu
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing, China
| | - Can Liu
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing, China
| | - Muhong Wu
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing, China
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Centre for Light-Element Advanced Materials, Peking University, Beijing, China
- Songshan Lake Materials Laboratory, Dongguan, China
| | - Zhi Xu
- Songshan Lake Materials Laboratory, Dongguan, China
| | - Wenlong Wang
- Institute of Physics, Chinese Academy of Sciences, Beijing, China
- Songshan Lake Materials Laboratory, Dongguan, China
| | - Hao Hong
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Centre for Light-Element Advanced Materials, Peking University, Beijing, China
| | - Peng Gao
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing, China
| | - Menghao Wu
- School of Physics, Huazhong University of Science and Technology, Wuhan, China
| | - Zhu-Jun Wang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, China
| | - Xiaozhi Xu
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics, South China Normal University, Guangzhou, China
| | - Enge Wang
- Institute of Physics, Chinese Academy of Sciences, Beijing, China
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Centre for Light-Element Advanced Materials, Peking University, Beijing, China
- Songshan Lake Materials Laboratory, Dongguan, China
- Tsientang Institute for Advanced Study, Hangzhou, China
| | - Feng Ding
- Shenzhen Institute of Advanced Technology, Shenzhen, China.
| | - Xiaorui Zheng
- School of Engineering, Westlake University, Hangzhou, China.
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China.
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Centre for Light-Element Advanced Materials, Peking University, Beijing, China.
- Songshan Lake Materials Laboratory, Dongguan, China.
| | - Xuedong Bai
- Institute of Physics, Chinese Academy of Sciences, Beijing, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China.
- Songshan Lake Materials Laboratory, Dongguan, China.
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41
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Heo YS, Kim TW, Lee W, Choi J, Park S, Yeom DI, Lee JU. Mesoscopic Stacking Reconfigurations in Stacked van der Waals Film. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2306296. [PMID: 38072812 DOI: 10.1002/smll.202306296] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/25/2023] [Revised: 11/29/2023] [Indexed: 05/25/2024]
Abstract
Mesoscopic-scale stacking reconfigurations are investigated when van der Waals (vdW) films are stacked. A method to visualize complicated stacking structures and mechanical distortions simultaneously in stacked atom-thick films using Raman spectroscopy is developed. In the rigid limit, it is found that the distortions originate from the transfer process, which can be understood through thin film mechanics with a large elastic property mismatch. In contrast, with atomic corrugations, the in-plane strain fields are more closely correlated with the stacking configuration, highlighting the impact of atomic reconstructions on the mesoscopic scale. It is discovered that the grain boundaries do not have a significant effect while the cracks are causing inhomogeneous strain in stacked polycrystalline films. This result contributes to understanding the local variation of emerging properties from moiré structures and advancing the reliability of stacked vdW material fabrication.
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Affiliation(s)
- Yoon Seong Heo
- Department of Physics and Department of Energy Systems Research, Ajou University, Suwon, 16499, South Korea
| | - Tae Wan Kim
- Department of Physics and Department of Energy Systems Research, Ajou University, Suwon, 16499, South Korea
| | - Wooseok Lee
- Department of Physics and Department of Energy Systems Research, Ajou University, Suwon, 16499, South Korea
| | - Jungseok Choi
- Department of Physics and Department of Energy Systems Research, Ajou University, Suwon, 16499, South Korea
| | - Soyeon Park
- Department of Physics and Department of Energy Systems Research, Ajou University, Suwon, 16499, South Korea
| | - Dong-Il Yeom
- Department of Physics and Department of Energy Systems Research, Ajou University, Suwon, 16499, South Korea
| | - Jae-Ung Lee
- Department of Physics and Department of Energy Systems Research, Ajou University, Suwon, 16499, South Korea
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42
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Wang Y, Li Z, Luo X, Gao J, Han Y, Jiang J, Tang J, Ju H, Li T, Lv R, Cui S, Yang Y, Sun Y, Zhu J, Gao X, Lu W, Sun Z, Xu H, Xiong Y, Cao L. Dualistic insulator states in 1T-TaS 2 crystals. Nat Commun 2024; 15:3425. [PMID: 38653984 DOI: 10.1038/s41467-024-47728-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/08/2023] [Accepted: 04/09/2024] [Indexed: 04/25/2024] Open
Abstract
While the monolayer sheet is well-established as a Mott-insulator with a finite energy gap, the insulating nature of bulk 1T-TaS2 crystals remains ambiguous due to their varying dimensionalities and alterable interlayer coupling. In this study, we present a unique approach to unlock the intertwined two-dimensional Mott-insulator and three-dimensional band-insulator states in bulk 1T-TaS2 crystals by structuring a laddering stack along the out-of-plane direction. Through modulating the interlayer coupling, the insulating nature can be switched between band-insulator and Mott-insulator mechanisms. Our findings demonstrate the duality of insulating nature in 1T-TaS2 crystals. By manipulating the translational degree of freedom in layered crystals, our discovery presents a promising strategy for exploring fascinating physics, independent of their dimensionality, thereby offering a "three-dimensional" control for the era of slidetronics.
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Affiliation(s)
- Yihao Wang
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China
| | - Zhihao Li
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China
- Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, Jilin, 130033, P. R. China
| | - Xuan Luo
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China
| | - Jingjing Gao
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China
| | - Yuyan Han
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China
| | - Jialiang Jiang
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China
| | - Jin Tang
- Department of Physics, School of Physics and Optoelectronics Engineering, Anhui University, Hefei, 230601, P. R. China
| | - Huanxin Ju
- PHI Analytical Laboratory, ULVAC-PHI Instruments Co., Ltd., Nanjing, 211110, Jiangsu, P. R. China
| | - Tongrui Li
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Run Lv
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China
- Science Island Branch of Graduate School, University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Shengtao Cui
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Yingguo Yang
- State Key Laboratory of Photovoltaic Science and Technology, School of Microelectronics, Fudan University, Shanghai, 200433, P. R. China
| | - Yuping Sun
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Junfa Zhu
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Xingyu Gao
- Shanghai Synchrotron Radiation Facility (SSRF), Zhangjiang Laboratory, Shanghai Advanced Research Institute, Chinese Academy of Sciences, 239 Zhangheng Road, Shanghai, 201204, P. R. China
| | - Wenjian Lu
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China.
| | - Zhe Sun
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, 230026, P. R. China.
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China.
- Hefei National Laboratory, Hefei, 230028, P. R. China.
| | - Hai Xu
- Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, Jilin, 130033, P. R. China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China.
| | - Yimin Xiong
- Department of Physics, School of Physics and Optoelectronics Engineering, Anhui University, Hefei, 230601, P. R. China.
- Hefei National Laboratory, Hefei, 230028, P. R. China.
| | - Liang Cao
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China.
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Kim H, Kim C, Jung Y, Kim N, Son J, Lee GH. In-plane anisotropic two-dimensional materials for twistronics. NANOTECHNOLOGY 2024; 35:262501. [PMID: 38387091 DOI: 10.1088/1361-6528/ad2c53] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/01/2023] [Accepted: 02/22/2024] [Indexed: 02/24/2024]
Abstract
In-plane anisotropic two-dimensional (2D) materials exhibit in-plane orientation-dependent properties. The anisotropic unit cell causes these materials to show lower symmetry but more diverse physical properties than in-plane isotropic 2D materials. In addition, the artificial stacking of in-plane anisotropic 2D materials can generate new phenomena that cannot be achieved in in-plane isotropic 2D materials. In this perspective we provide an overview of representative in-plane anisotropic 2D materials and their properties, such as black phosphorus, group IV monochalcogenides, group VI transition metal dichalcogenides with 1T' and Tdphases, and rhenium dichalcogenides. In addition, we discuss recent theoretical and experimental investigations of twistronics using in-plane anisotropic 2D materials. Both in-plane anisotropic 2D materials and their twistronics hold considerable potential for advancing the field of 2D materials, particularly in the context of orientation-dependent optoelectronic devices.
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Affiliation(s)
- Hangyel Kim
- Department of Material Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Changheon Kim
- Department of Material Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
- Functional Composite Materials Research Center, Korea Institute of Science and Technology (KIST), Jeonbuk 55324, Republic of Korea
| | - Yeonwoong Jung
- NanoScience Technology Center, University of Central Florida, Orlando, FL 32826, United States of America
- Department of Materials Science and Engineering, University of Central Florida, Orlando, FL 32816, United States of America
- Department of Electrical and Computer Engineering, University of Central Florida, Orlando, FL 32816, United States of America
| | - Namwon Kim
- Research Institute for Advanced Materials (RIAM), Seoul National University, Seoul 08826, Republic of Korea
- Ingram School of Engineering, Texas State University, San Marcos, TX 78666, United States of America
- Materials Science, Engineering, and Commercialization, Texas State University, San Marcos, TX 78666, United States of America
| | - Jangyup Son
- Functional Composite Materials Research Center, Korea Institute of Science and Technology (KIST), Jeonbuk 55324, Republic of Korea
- Department of JBNU-KIST Industry-Academia Convergence Research, Jeonbuk National University, Jeonbuk 54895, Republic of Korea
- Division of Nano and Information Technology, KIST School University of Science and Technology(UST), Jeonbuk 55324, Republic of Korea
| | - Gwan-Hyoung Lee
- Department of Material Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
- Research Institute for Advanced Materials (RIAM), Seoul National University, Seoul 08826, Republic of Korea
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44
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Wu K, Wang H, Yang M, Liu L, Sun Z, Hu G, Song Y, Han X, Guo J, Wu K, Feng B, Shen C, Huang Y, Shi Y, Cheng Z, Yang H, Bao L, Pantelides ST, Gao HJ. Gold-Template-Assisted Mechanical Exfoliation of Large-Area 2D Layers Enables Efficient and Precise Construction of Moiré Superlattices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2313511. [PMID: 38597395 DOI: 10.1002/adma.202313511] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/11/2023] [Revised: 04/07/2024] [Indexed: 04/11/2024]
Abstract
Moiré superlattices, consisting of rotationally aligned 2D atomically thin layers, provide a highly novel platform for the study of correlated quantum phenomena. However, reliable and efficient construction of moiré superlattices is challenging because of difficulties to accurately angle-align small exfoliated 2D layers and the need to shun wet-transfer processes. Here, efficient and precise construction of various moiré superlattices is demonstrated by picking up and stacking large-area 2D mono- or few-layer crystals with predetermined crystal axes, made possible by a gold-template-assisted mechanical exfoliation method. The exfoliated 2D layers are semiconductors, superconductors, or magnets and their high quality is confirmed by photoluminescence and Raman spectra and by electrical transport measurements of fabricated field-effect transistors and Hall devices. Twisted homobilayers with angle-twisting accuracy of ≈0.3°, twisted heterobilayers with sub-degree angle-alignment accuracy, and multilayer superlattices are precisely constructed and characterized by their moiré patterns, interlayer excitons, and second harmonic generation. The present study paves the way for exploring emergent phenomena in moiré superlattices.
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Affiliation(s)
- Kang Wu
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Hao Wang
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Meng Yang
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Li Liu
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Zhenyu Sun
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Guojing Hu
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Yanpeng Song
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Xin Han
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Science, Beijing, 100049, P. R. China
| | - Jiangang Guo
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Kehui Wu
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Baojie Feng
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Chengmin Shen
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Yuan Huang
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Youguo Shi
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Science, Beijing, 100049, P. R. China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, P. R. China
| | - Zhigang Cheng
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, P. R. China
| | - Haitao Yang
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- Hefei National Laboratory, Hefei, Anhui, 230088, P. R. China
| | - Lihong Bao
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- Hefei National Laboratory, Hefei, Anhui, 230088, P. R. China
| | - Sokrates T Pantelides
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- Department of Physics and Astronomy & Department of Electrical and Computer Engineering, Vanderbilt University, Nashville, TN, 37235, USA
| | - Hong-Jun Gao
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- Hefei National Laboratory, Hefei, Anhui, 230088, P. R. China
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Zhai W, Li Z, Wang Y, Zhai L, Yao Y, Li S, Wang L, Yang H, Chi B, Liang J, Shi Z, Ge Y, Lai Z, Yun Q, Zhang A, Wu Z, He Q, Chen B, Huang Z, Zhang H. Phase Engineering of Nanomaterials: Transition Metal Dichalcogenides. Chem Rev 2024; 124:4479-4539. [PMID: 38552165 DOI: 10.1021/acs.chemrev.3c00931] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/11/2024]
Abstract
Crystal phase, a critical structural characteristic beyond the morphology, size, dimension, facet, etc., determines the physicochemical properties of nanomaterials. As a group of layered nanomaterials with polymorphs, transition metal dichalcogenides (TMDs) have attracted intensive research attention due to their phase-dependent properties. Therefore, great efforts have been devoted to the phase engineering of TMDs to synthesize TMDs with controlled phases, especially unconventional/metastable phases, for various applications in electronics, optoelectronics, catalysis, biomedicine, energy storage and conversion, and ferroelectrics. Considering the significant progress in the synthesis and applications of TMDs, we believe that a comprehensive review on the phase engineering of TMDs is critical to promote their fundamental studies and practical applications. This Review aims to provide a comprehensive introduction and discussion on the crystal structures, synthetic strategies, and phase-dependent properties and applications of TMDs. Finally, our perspectives on the challenges and opportunities in phase engineering of TMDs will also be discussed.
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Affiliation(s)
- Wei Zhai
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Zijian Li
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Yongji Wang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Li Zhai
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- Hong Kong Branch of National Precious Metals Material Engineering Research Center (NPMM), City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Yao Yao
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Siyuan Li
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Lixin Wang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Hua Yang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Banlan Chi
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Jinzhe Liang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Zhenyu Shi
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Yiyao Ge
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, China
| | - Zhuangchai Lai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong 999077, China
| | - Qinbai Yun
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - An Zhang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Zhiying Wu
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Qiyuan He
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Bo Chen
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- State Key Laboratory of Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), School of Chemistry and Life Sciences, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Zhiqi Huang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Hua Zhang
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- Hong Kong Branch of National Precious Metals Material Engineering Research Center (NPMM), City University of Hong Kong, Kowloon, Hong Kong 999077, China
- Hong Kong Institute for Clean Energy, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- Shenzhen Research Institute, City University of Hong Kong, Shenzhen 518057, China
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Li T, Wu Y, Yu G, Li S, Ren Y, Liu Y, Liu J, Feng H, Deng Y, Chen M, Zhang Z, Min T. Realization of sextuple polarization states and interstate switching in antiferroelectric CuInP 2S 6. Nat Commun 2024; 15:2653. [PMID: 38531845 DOI: 10.1038/s41467-024-46891-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/06/2023] [Accepted: 03/14/2024] [Indexed: 03/28/2024] Open
Abstract
Realization of higher-order multistates with mutual interstate switching in ferroelectric materials is a perpetual drive for high-density storage devices and beyond-Moore technologies. Here we demonstrate experimentally that antiferroelectric van der Waals CuInP2S6 films can be controllably stabilized into double, quadruple, and sextuple polarization states, and a system harboring polarization order of six is also reversibly tunable into order of four or two. Furthermore, for a given polarization order, mutual interstate switching can be achieved via moderate electric field modulation. First-principles studies of CuInP2S6 multilayers help to reveal that the double, quadruple, and sextuple states are attributable to the existence of respective single, double, and triple ferroelectric domains with antiferroelectric interdomain coupling and Cu ion migration. These findings offer appealing platforms for developing multistate ferroelectric devices, while the underlining mechanism is transformative to other non-volatile material systems.
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Affiliation(s)
- Tao Li
- Centre for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi'an Jiaotong University, 710049, Xi'an, China
| | - Yongyi Wu
- Centre for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi'an Jiaotong University, 710049, Xi'an, China
| | - Guoliang Yu
- Key Laboratory for Matter Microstructure and Function of Hunan Province, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Centre for Quantum Effects and Applications (SICQEA), School of Physics and Electronics, Hunan Normal University, 410081, Changsha, China
| | - Shengxian Li
- Key Laboratory for Matter Microstructure and Function of Hunan Province, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Centre for Quantum Effects and Applications (SICQEA), School of Physics and Electronics, Hunan Normal University, 410081, Changsha, China
| | - Yifeng Ren
- Solid State Microstructure National Key Lab and Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, 210093, Nanjing, China
| | - Yadong Liu
- Centre for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi'an Jiaotong University, 710049, Xi'an, China
| | - Jiarui Liu
- Centre for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi'an Jiaotong University, 710049, Xi'an, China
| | - Hao Feng
- Centre for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi'an Jiaotong University, 710049, Xi'an, China
| | - Yu Deng
- Solid State Microstructure National Key Lab and Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, 210093, Nanjing, China
| | - Mingxing Chen
- Key Laboratory for Matter Microstructure and Function of Hunan Province, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Centre for Quantum Effects and Applications (SICQEA), School of Physics and Electronics, Hunan Normal University, 410081, Changsha, China.
- State Key Laboratory of Powder Metallurgy, Central South University, 410083, Changsha, China.
| | - Zhenyu Zhang
- International Center for Quantum Design of Functional Materials (ICQD) and Hefei National Laboratory, University of Science and Technology of China, 230026, Hefei, Anhui, China.
| | - Tai Min
- Centre for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi'an Jiaotong University, 710049, Xi'an, China.
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Xun W, Wu C, Sun H, Zhang W, Wu YZ, Li P. Coexisting Magnetism, Ferroelectric, and Ferrovalley Multiferroic in Stacking-Dependent Two-Dimensional Materials. NANO LETTERS 2024; 24:3541-3547. [PMID: 38451854 DOI: 10.1021/acs.nanolett.4c00597] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/09/2024]
Abstract
Two-dimensional (2D) multiferroic materials have widespread application prospects in facilitating the integration and miniaturization of nanodevices. However, the magnetic, ferroelectric, and ferrovalley properties in one 2D material are rarely coupled. Here, we propose a mechanism for manipulating magnetism, ferroelectric, and valley polarization by interlayer sliding in a 2D bilayer material. Monolayer GdI2 is a ferromagnetic semiconductor with a valley polarization of up to 155.5 meV. More interestingly, the magnetism and valley polarization of bilayer GdI2 can be strongly coupled by sliding ferroelectricity, making these tunable and reversible. In addition, we uncover the microscopic mechanism of the magnetic phase transition by a spin Hamiltonian and electron hopping between layers. Our findings offer a new direction for investigating 2D multiferroic devices with implications for next-generation electronic, valleytronic, and spintronic devices.
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Affiliation(s)
- Wei Xun
- State Key Laboratory for Mechanical Behavior of Materials, Center for Spintronics and Quantum System, School of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, People's Republic of China
- Faculty of Electronic Information Engineering, Huaiyin Institute of Technology, Huaian 223003, People's Republic of China
| | - Chao Wu
- State Key Laboratory for Mechanical Behavior of Materials, Center for Spintronics and Quantum System, School of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, People's Republic of China
| | - Hanbo Sun
- State Key Laboratory for Mechanical Behavior of Materials, Center for Spintronics and Quantum System, School of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, People's Republic of China
| | - Weixi Zhang
- Department of Physics and Electronic Engineering, Tongren University, Tongren 554300, People's Republic of China
| | - Yin-Zhong Wu
- School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, People's Republic of China
| | - Ping Li
- State Key Laboratory for Mechanical Behavior of Materials, Center for Spintronics and Quantum System, School of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, People's Republic of China
- State Key Laboratory for Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China
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Wang J, Cheng F, Sun Y, Xu H, Cao L. Stacking engineering in layered homostructures: transitioning from 2D to 3D architectures. Phys Chem Chem Phys 2024; 26:7988-8012. [PMID: 38380525 DOI: 10.1039/d3cp04656g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/22/2024]
Abstract
Artificial materials, characterized by their distinctive properties and customized functionalities, occupy a central role in a wide range of applications including electronics, spintronics, optoelectronics, catalysis, and energy storage. The emergence of atomically thin two-dimensional (2D) materials has driven the creation of artificial heterostructures, harnessing the potential of combining various 2D building blocks with complementary properties through the art of stacking engineering. The promising outcomes achieved for heterostructures have spurred an inquisitive exploration of homostructures, where identical 2D layers are precisely stacked. This perspective primarily focuses on the field of stacking engineering within layered homostructures, where precise control over translational or rotational degrees of freedom between vertically stacked planes or layers is paramount. In particular, we provide an overview of recent advancements in the stacking engineering applied to 2D homostructures. Additionally, we will shed light on research endeavors venturing into three-dimensional (3D) structures, which allow us to proactively address the limitations associated with artificial 2D homostructures. We anticipate that the breakthroughs in stacking engineering in 3D materials will provide valuable insights into the mechanisms governing stacking effects. Such advancements have the potential to unlock the full capability of artificial layered homostructures, propelling the future development of materials, physics, and device applications.
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Affiliation(s)
- Jiamin Wang
- Changchun Institute of Optics, Fine Mechanics & Physics (CIOMP), Chinese Academy of Sciences, Changchun 130033, P. R. China.
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Fang Cheng
- State Key Laboratory for Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts and Telecommunications, Nanjing 210023, P. R. China
| | - Yan Sun
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China.
| | - Hai Xu
- Changchun Institute of Optics, Fine Mechanics & Physics (CIOMP), Chinese Academy of Sciences, Changchun 130033, P. R. China.
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100049, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Liang Cao
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei 230031, P. R. China.
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Sun X, Suriyage M, Khan AR, Gao M, Zhao J, Liu B, Hasan MM, Rahman S, Chen RS, Lam PK, Lu Y. Twisted van der Waals Quantum Materials: Fundamentals, Tunability, and Applications. Chem Rev 2024; 124:1992-2079. [PMID: 38335114 DOI: 10.1021/acs.chemrev.3c00627] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/12/2024]
Abstract
Twisted van der Waals (vdW) quantum materials have emerged as a rapidly developing field of two-dimensional (2D) semiconductors. These materials establish a new central research area and provide a promising platform for studying quantum phenomena and investigating the engineering of novel optoelectronic properties such as single photon emission, nonlinear optical response, magnon physics, and topological superconductivity. These captivating electronic and optical properties result from, and can be tailored by, the interlayer coupling using moiré patterns formed by vertically stacking atomic layers with controlled angle misorientation or lattice mismatch. Their outstanding properties and the high degree of tunability position them as compelling building blocks for both compact quantum-enabled devices and classical optoelectronics. This paper offers a comprehensive review of recent advancements in the understanding and manipulation of twisted van der Waals structures and presents a survey of the state-of-the-art research on moiré superlattices, encompassing interdisciplinary interests. It delves into fundamental theories, synthesis and fabrication, and visualization techniques, and the wide range of novel physical phenomena exhibited by these structures, with a focus on their potential for practical device integration in applications ranging from quantum information to biosensors, and including classical optoelectronics such as modulators, light emitting diodes, lasers, and photodetectors. It highlights the unique ability of moiré superlattices to connect multiple disciplines, covering chemistry, electronics, optics, photonics, magnetism, topological and quantum physics. This comprehensive review provides a valuable resource for researchers interested in moiré superlattices, shedding light on their fundamental characteristics and their potential for transformative applications in various fields.
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Affiliation(s)
- Xueqian Sun
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Manuka Suriyage
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Ahmed Raza Khan
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Department of Industrial and Manufacturing Engineering, University of Engineering and Technology (Rachna College Campus), Gujranwala, Lahore 54700, Pakistan
| | - Mingyuan Gao
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- College of Engineering and Technology, Southwest University, Chongqing 400716, China
| | - Jie Zhao
- Department of Quantum Science & Technology, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Boqing Liu
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Md Mehedi Hasan
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Sharidya Rahman
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia
- ARC Centre of Excellence in Exciton Science, Monash University, Clayton, Victoria 3800, Australia
| | - Ruo-Si Chen
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Ping Koy Lam
- Department of Quantum Science & Technology, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
- Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Yuerui Lu
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
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50
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Fox C, Mao Y, Zhang X, Wang Y, Xiao J. Stacking Order Engineering of Two-Dimensional Materials and Device Applications. Chem Rev 2024; 124:1862-1898. [PMID: 38150266 DOI: 10.1021/acs.chemrev.3c00618] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
Stacking orders in 2D van der Waals (vdW) materials dictate the relative sliding (lateral displacement) and twisting (rotation) between atomically thin layers. By altering the stacking order, many new ferroic, strongly correlated and topological orderings emerge with exotic electrical, optical and magnetic properties. Thanks to the weak vdW interlayer bonding, such highly flexible and energy-efficient stacking order engineering has transformed the design of quantum properties in 2D vdW materials, unleashing the potential for miniaturized high-performance device applications in electronics, spintronics, photonics, and surface chemistry. This Review provides a comprehensive overview of stacking order engineering in 2D vdW materials and their device applications, ranging from the typical fabrication and characterization methods to the novel physical properties and the emergent slidetronics and twistronics device prototyping. The main emphasis is on the critical role of stacking orders affecting the interlayer charge transfer, orbital coupling and flat band formation for the design of innovative materials with on-demand quantum properties and surface potentials. By demonstrating a correlation between the stacking configurations and device functionality, we highlight their implications for next-generation electronic, photonic and chemical energy conversion devices. We conclude with our perspective of this exciting field including challenges and opportunities for future stacking order engineering research.
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Affiliation(s)
- Carter Fox
- Department of Materials Science and Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
- Department of Physics, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
| | - Yulu Mao
- Department of Electrical and Computer Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
| | - Xiang Zhang
- Faculty of Science, University of Hong Kong, Hong Kong, China
- Faculty of Engineering, University of Hong Kong, Hong Kong, China
| | - Ying Wang
- Department of Materials Science and Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
- Department of Physics, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
- Department of Electrical and Computer Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
| | - Jun Xiao
- Department of Materials Science and Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
- Department of Physics, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
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