Graphene-based Josephson junction microwave bolometer

Nonlinear electronic devices on single-layer CVD graphene for thermistors

In this article, we present simple, cost-effective, passive (non-gated) electronic devices based on single-layer (SL) chemical vapor deposited (CVD) graphene that show nonlinear and asymmetric current-voltage characteristics (CVCs) at ambient temperatures. Al2O3-Ti-Au contacts to graphene results in a nonlinear resistance to achieve nonlinearity in the CVC. Upon transfer to polyethylene terephthalate, the CVD-grown SL graphene shows mobility of 6200 cm2V-1S-1. We have observed both thermoelectric effect and thermoresistive sensing in the fabricated devices such as voltage and temperature concerning change in electronic power and resistance through asymmetric and nonlinear CVC. The device is stable both at low and high voltages (±200 mV to ±4 V) and temperatures (4 K - 300 K). Graphene-based thermosensing devices can be ultra-thin, cost-effective, non-toxic/organic, flexible, and high-speed for integration into future complementary metal-oxide semiconductor (CMOS) interface, and wearable self-power electronics. A strong negative temeperature coefficent of resistance is demonstrated in the realized nonlinear graphene-integrated resistors for its application in NTC thermistors.

Viscous terahertz photoconductivity of hydrodynamic electrons in graphene

Light incident upon materials can induce changes in their electrical conductivity, a phenomenon referred to as photoresistance. In semiconductors, the photoresistance is negative, as light-induced promotion of electrons across the bandgap enhances the number of charge carriers participating in transport. In superconductors and normal metals, the photoresistance is positive because of the destruction of the superconducting state and enhanced momentum-relaxing scattering, respectively. Here we report a qualitative deviation from the standard behaviour in doped metallic graphene. We show that Dirac electrons exposed to continuous-wave terahertz (THz) radiation can be thermally decoupled from the lattice, which activates hydrodynamic electron transport. In this regime, the resistance of graphene constrictions experiences a decrease caused by the THz-driven superballistic flow of correlated electrons. We analyse the dependencies of the negative photoresistance on the carrier density, and the radiation power, and show that our superballistic devices operate as sensitive phonon-cooled bolometers and can thus offer, in principle, a picosecond-scale response time. Beyond their fundamental implications, our findings underscore the practicality of electron hydrodynamics in designing ultra-fast THz sensors and electron thermometers.

Infrared single-photon detection with superconducting magic-angle twisted bilayer graphene

The moiré superconductor magic-angle twisted bilayer graphene (MATBG) shows exceptional properties, with an electron (hole) ensemble of only ~1011 carriers per square centimeter, which is five orders of magnitude lower than traditional superconductors (SCs). This results in an ultralow electronic heat capacity and a large kinetic inductance of this truly two-dimensional SC, providing record-breaking parameters for quantum sensing applications, specifically thermal sensing and single-photon detection. To fully exploit these unique superconducting properties for quantum sensing, here, we demonstrate a proof-of-principle experiment to detect single near-infrared photons by voltage biasing an MATBG device near its superconducting phase transition. We observe complete destruction of the SC state upon absorption of a single infrared photon even in a 16-square micrometer device, showcasing exceptional sensitivity. Our work offers insights into the MATBG-photon interaction and demonstrates pathways to use moiré superconductors as an exciting platform for revolutionary quantum devices and sensors.

Detecting Planck-Scale Dark Matter with Quantum Interference

In spite of the large astronomical evidence for its effects, the nature of dark matter remains enigmatic. Particles that interact only, or almost only, gravitationally, in particular with masses around the Planck mass-the fundamental scale of quantum gravity-are intriguing candidates. Here, we show that there is a theoretical possibility to directly detect such particles using highly sensitive gravity-mediated quantum phase shifts. In particular, we illustrate a protocol utilizing Josephson junctions.

Decoupled High-Mobility Graphene on Cu(111)/Sapphire via Chemical Vapor Deposition

The growth of high-quality graphene on flat and rigid templates, such as metal thin films on insulating wafers, is regarded as a key enabler for technologies based on 2D materials. In this work, the growth of decoupled graphene is introduced via non-reducing low-pressure chemical vapor deposition (LPCVD) on crystalline Cu(111) films deposited on sapphire. The resulting film is atomically flat, with no detectable cracks or ripples, and lies atop of a thin Cu2O layer, as confirmed by microscopy, diffraction, and spectroscopy analyses. Post-growth treatment of the partially decoupled graphene enables full and uniform oxidation of the interface, greatly simplifying subsequent transfer processes, particularly dry-pick up - a task that proves challenging when dealing with graphene directly synthesized on metallic Cu(111). Electrical transport measurements reveal high carrier mobility at room temperature, exceeding 104 cm2 V-1 s-1 on SiO2/Si and 105 cm2 V-1 s-1 upon encapsulation in hexagonal boron nitride (hBN). The demonstrated growth approach yields exceptional material quality, in line with micro-mechanically exfoliated graphene flakes, and thus paves the way toward large-scale production of pristine graphene suitable for high-performance next-generation applications.

Two-dimensional topological semimetals: an emerging candidate for terahertz detectors and on-chip integration

The importance of terahertz (THz) detection lies in its ability to provide detailed information in a non-destructive manner, making it a valuable tool across various domains including spectroscopy, communication, and security. The ongoing development of THz detectors aims to enhance their sensitivity, resolution and integration into compact and portable devices such as handheld scanners or integrated communication chips. Generally, two-dimensional (2D) materials are considered potential candidates for device miniaturization but detecting THz radiation using 2D semiconductors is generally difficult due to the ultra-small photon energy. However, this challenge is being addressed by the advent of topological semimetals (TSM) with zero-bandgap characteristics. These semimetals offer low-energy excitations in proximity to the Dirac point, which is particularly important for applications requiring a broad detection range. Their distinctive band structures with linear energy-momentum dispersion near the Fermi level also lead to high electron mobility and low effective mass. The presence of topologically protected dissipationless conducting channels and self-powered response provides a basis for low-energy integration. In order to establish paradigms for semimetal-based THz detectors, this review initially offers an analytical summary of THz detection principles. Then, the review demonstrates the distinct design of devices, the excellent performance derived from the topological surface state and unique band structures in TSM. Finally, we outline the prospective avenues for on-chip integration of TSM-based THz detectors. We believe this review can promote further research on the new generation of THz detectors and facilitate advancements in THz imaging, spectroscopy, and communication systems.

Low-Temperature Thermal Transport Characteristics in Epitaxial Bilayer Graphene Microbridges

In this paper, we present a study of the thermal transport of epitaxial bilayer graphene microbridges. The thermal conductance of three graphene microbridges with different lengths was measured at different temperatures using Johnson noise thermometry. We find that with the decrease of the temperature, the thermal transport in the graphene microbridges switches from electron-phonon coupling to electron diffusion, and the switching temperature is dependent on the length of the microbridge, which is in good agreement with the simulation based on a distributed hot-spot model. Moreover, the electron-phonon thermal conductance has a temperature power law of T3 as predicted for pristine graphene and the electron-phonon coupling coefficient σep is found to be approximately 0.18 W/(m2 K4), corresponding to a deformation potential D of 55 eV. In addition, the electron diffusion in the graphene microbridges adheres to the Wiedemann-Franz law, requiring no corrections to the Lorentz number.

Ultra-broadband absorbance of nanometer-thin pyrolyzed-carbon film on silicon nitride membrane

Fifty percents absorption by thin film, with thickness is much smaller than the skin depth and optical thickness much smaller than the wavelength, is a well-known concept of classical electrodynamics. This is a valuable feature that has been numerously widely explored for metal films, while chemically inert nanomembranes are a real fabrication challenge. Here we report the 20 nm thin pyrolyzed carbon film (PyC) placed on 300 nm thick silicon nitride (Si3N4) membrane demonstrating an efficient broadband absorption in the terahertz and near infrared ranges. While the bare Si3N4membrane is completely transparent in the THz range, the 20 nm thick PyC layer increases the absorption of the PyC coated Si3N4membrane to 40%. The reflection and transmission spectra in the near infrared region reveal that the PyC film absorption persists to a level of at least 10% of the incident power. Such a broadband absorption of the PyC film opens new pathways toward broadband bolometric radiation detectors.

Superconducting Cavity-Based Sensing of Band Gaps in 2D Materials

The superconducting coplanar waveguide (SCPW) cavity plays an essential role in various areas like superconducting qubits, parametric amplifiers, radiation detectors, and studying magnon-photon and photon-phonon coupling. Despite its wide-ranging applications, the use of SCPW cavities to study various van der Waals 2D materials has been relatively unexplored. The resonant modes of the SCPW cavity exquisitely sense the dielectric environment. In this work, we measure the charge compressibility of bilayer graphene coupled to a half-wavelength SCPW cavity. Our approach provides a means to detect subtle changes in the capacitance of the bilayer graphene heterostructure, which depends on the compressibility of bilayer graphene, manifesting as shifts in the resonant frequency of the cavity. This method holds promise for exploring a wide class of van der Waals 2D materials, including transition metal dichalcogenides (TMDs) and their moiré, where DC transport measurement is challenging.

Josephson radiation threshold detector

A Josephson radiation threshold detector (JRTD) that is based on the threshold behaviour of a current bias Josephson junction (CBJJ) is designed and fabricated for infrared radiation (IR@1550nm) detection at low temperatures. To achieve the optimal performance, we develop a binary hypothesis detection method to calibrate Josephson threshold behaviours (i.e. the switching current distributions of the CBJJ with the Al/AlOx/Al junction) in the absence and presence of radiation. In the absence of IR radiation, the junction transitioned with a measurable voltage drop across the junction, and this signal was treated as the events of hypothesis H0. The events of junction transition observed in the presence of the IR radiation served as hypothesis H1. Considering the usual Gaussian noise and based on statistical decision theory, the accumulated data of the measured switching current distributions are processed, and the threshold sensitivity of the demonstrated JRTD device is estimated. The minimum detectable IR radiation power of the proposed detector is approximately 0.74 pW, which corresponds to the photon rate of 5.692 × 106 photons/second. Further optimisation of JRTDs to implement the desired binary detection of a single photon is still a subject of argument, at least theoretically.

Contemporary innovations in two-dimensional transition metal dichalcogenide-based P-N junctions for optoelectronics

Two-dimensional transition metal dichalcogenides (2D-TMDCs) with various physical characteristics have attracted significant interest from the scientific and industrial worlds in the years following Moore's law. The p-n junction is one of the earliest electrical components to be utilized in electronics and optoelectronics, and modern research on 2D materials has renewed interest in it. In this regard, device preparation and application have evolved substantially in this decade. 2D TMDCs provide unprecedented flexibility in the construction of innovative p-n junction device designs, which is not achievable with traditional bulk semiconductors. It has been investigated using 2D TMDCs for various junctions, including homojunctions, heterojunctions, P-I-N junctions, and broken gap junctions. To achieve high-performance p-n junctions, several issues still need to be resolved, such as developing 2D TMDCs of superior quality, raising the rectification ratio and quantum efficiency, and successfully separating the photogenerated electron-hole pairs, among other things. This review comprehensively details the various 2D-based p-n junction geometries investigated with an emphasis on 2D junctions. We investigated the 2D p-n junctions utilized in current rectifiers and photodetectors. To make a comparison of various devices easier, important optoelectronic and electronic features are presented. We thoroughly assessed the review's prospects and challenges for this emerging field of study. This study will serve as a roadmap for more real-world photodetection technology applications.

Stack growth of wafer-scale van der Waals superconductor heterostructures

Two-dimensional (2D) van der Waals (vdW) heterostructures have attracted considerable attention in recent years1-5. The most widely used method of fabrication is to stack mechanically exfoliated micrometre-sized flakes6-18, but this process is not scalable for practical applications. Despite thousands of 2D materials being created, using various stacking combinations1-3,19-21, hardly any large 2D superconductors can be stacked intact into vdW heterostructures, greatly restricting the applications for such devices. Here we report a high-to-low temperature strategy for controllably growing stacks of multiple-layered vdW superconductor heterostructure (vdWSH) films at a wafer scale. The number of layers of 2D superconductors in the vdWSHs can be precisely controlled, and we have successfully grown 27 double-block, 15 triple-block, 5 four-block and 3 five-block vdWSH films (where one block represents one 2D material). Morphological, spectroscopic and atomic-scale structural analyses reveal the presence of parallel, clean and atomically sharp vdW interfaces on a large scale, with very little contamination between neighbouring layers. The intact vdW interfaces allow us to achieve proximity-induced superconductivity and superconducting Josephson junctions on a centimetre scale. Our process for making multiple-layered vdWSHs can easily be generalized to other situations involving 2D materials, potentially accelerating the design of next-generation functional devices and applications22-24.

Layered materials as a platform for quantum technologies

Layered materials are taking centre stage in the ever-increasing research effort to develop material platforms for quantum technologies. We are at the dawn of the era of layered quantum materials. Their optical, electronic, magnetic, thermal and mechanical properties make them attractive for most aspects of this global pursuit. Layered materials have already shown potential as scalable components, including quantum light sources, photon detectors and nanoscale sensors, and have enabled research of new phases of matter within the broader field of quantum simulations. In this Review we discuss opportunities and challenges faced by layered materials within the landscape of material platforms for quantum technologies. In particular, we focus on applications that rely on light-matter interfaces.

Thermoelectric Properties of the Corbino Disk in Graphene

Thermopower and the Lorentz number for an edge-free (Corbino) graphene disk in the quantum Hall regime is calculated within the Landauer-Büttiker formalism. By varying the electrochemical potential, we find that amplitude of the Seebeck coefficient follows a modified Goldsmid-Sharp relation, with the energy gap defined by the interval between the zero and the first Landau levels in bulk graphene. An analogous relation for the Lorentz number is also determined. Thus, these thermoelectric properties are solely defined by the magnetic field, the temperature, the Fermi velocity in graphene, and fundamental constants including the electron charge, the Planck and Boltzmann constants, being independent of the geometric dimensions of the system. This suggests that the Corbino disk in graphene may operate as a thermoelectric thermometer, allowing to measure small temperature differences between two reservoirs, if the mean temperature magnetic field are known.

Nonreciprocal Supercurrents in a Field-Free Graphene Josephson Triode

Superconducting diodes are proposed nonreciprocal circuit elements that should exhibit nondissipative transport in one direction while being resistive in the opposite direction. Multiple examples of such devices have emerged in the past couple of years; however, their efficiency is typically limited, and most of them require a magnetic field to function. Here we present a device that achieves efficiencies approaching 100% while operating at zero field. Our samples consist of a network of three graphene Josephson junctions linked by a common superconducting island, to which we refer as a Josephson triode. The three-terminal nature of the device inherently breaks the inversion symmetry, and the control current applied to one of the contacts breaks the time-reversal symmetry. The triode's utility is demonstrated by rectifying a small (nA scale amplitude) applied square wave. We speculate that devices of this type could be realistically employed in the modern quantum circuits.

Hot Carrier Thermalization and Josephson Inductance Thermometry in a Graphene-Based Microwave Circuit

Due to its exceptional electronic and thermal properties, graphene is a key material for bolometry, calorimetry, and photon detection. However, despite graphene's relatively simple electronic structure, the physical processes responsible for the heat transport from the electrons to the lattice are experimentally still elusive. Here, we measure the thermal response of low-disorder graphene encapsulated in hexagonal boron nitride by integrating it within a multiterminal superconducting microwave resonator. The device geometry allows us to simultaneously apply Joule heat power to the graphene flake while performing calibrated readout of the electron temperature. We probe the thermalization rates of both electrons and holes with high precision and observe a thermalization scaling exponent not consistent with cooling through the graphene bulk and argue that instead it can be attributed to processes at the graphene-aluminum interface. Our technique provides new insights into the thermalization pathways essential for the next-generation graphene thermal detectors.

Selective Enhancement of Photoresponse with Ferroelectric-Controlled BP/In2 Se3 vdW Heterojunction

Owing to the large built-in field for efficient charge separation, heterostructures facilitate the simultaneous realization of a low dark current and high photocurrent. The lack of an efficient approach to engineer the depletion region formed across the interfaces of heterojunctions owing to doping differences hinders the realization of high-performance van der Waals (vdW) photodetectors. This study proposes a ferroelectric-controlling van der Waals photodetector with vertically stacked two-dimensional (2D) black phosphorus (BP)/indium selenide (In₂ Se₃ ) to realize high-sensitivity photodetection. The depletion region can be reconstructed by tuning the polarization states generated from the ferroelectric In₂ Se₃ layers. Further, the energy bands at the heterojunction interfaces can be aligned and flexibly engineered using ferroelectric field control. Fast response, self-driven photodetection, and three-orders-of-magnitude detection improvements are achieved in the switchable visible or near-infrared operation bands. The results of the study are expected to aid in improving the photodetection performance of vdW optoelectronic devices.

Ultra-Low-Density Carbon Nanotube Aerogel Film for Fast and Sensitive Bolometric Sensing

In various applications, infrared (IR) detectors with quick responses and high sensitivity at room temperature are essential. This work synthesizes carbon nanotube aerogel films (CAFs) with an ultra-low density of 1.33 mg cm^-3. Transient electrothermal (TET) technology is used to characterize the thermal and electrical transport of CAFs in the temperature range of 320 to 10 K. CAF has record-low thermal conductivity (2.5 mW m^-1 K^-1 at 320 K) and thermal diffusivity (2.24 × 10^-6 m² s^-1 at 320 K) in vacuum. The TCR of CAF is -0.11%/K at 295 K, which is 57% higher than that of the MWCNT films. In addition, the comprehensive bolometric performance of carbon nanotube aerogels is tested and analyzed, including the photothermal response, resistivity responsivity, and response time to lasers of a broad spectrum from ultraviolet to near-infrared. The relative responsivity of CAF to lasers of different wavelengths is found to be consistent. The response time of CAF with 200 μm suspended length is measured to be as short as 2.95-3.03 ms (framing rate of 330-339 per second). In addition, the resistive response of the CAF sample to a blackbody radiator and the radiation of the human hand also shows good sensitivity and repeatability. These results demonstrate the promising application of CAF as a sensitive and fast-response uncooled bolometer.

Gate-tunable bolometer based on strongly coupled graphene mechanical resonators

Bolometers based on graphene have demonstrated outstanding performance with high sensitivity and short response time. In situ adjustment of bolometers is very important in various applications, but it is still difficult to implement in many systems. Here we propose a gate-tunable bolometer based on two strongly coupled graphene nanomechanical resonators. Both resonators are exposed to the same light field, and we can measure the properties of one bolometer by directly tracking the resonance frequency shifts, and indirectly measure the other bolometer through mechanical coupling. We find that the sensitivity and the response bandwidth of both bolometers can be independently adjusted by tuning the corresponding gate voltages. Moreover, the properties of the indirectly measured bolometer show a dependence on the coupling between the two resonators, with other parameters being fixed. Our method has the potential to optimize the design of large-scale bolometer arrays, and open new horizons in infrared/terahertz astronomy and communication systems.

A gate-tunable graphene Josephson parametric amplifier

With a large portfolio of elemental quantum components, superconducting quantum circuits have contributed to advances in microwave quantum optics¹. Of these elements, quantum-limited parametric amplifiers^2-4 are essential for low noise readout of quantum systems whose energy range is intrinsically low (tens of μeV)^5,6. They are also used to generate non-classical states of light that can be a resource for quantum enhanced detection⁷. Superconducting parametric amplifiers, such as quantum bits, typically use a Josephson junction as a source of magnetically tunable and dissipation-free non-linearity. In recent years, efforts have been made to introduce semiconductor weak links as electrically tunable non-linear elements, with demonstrations of microwave resonators and quantum bits using semiconductor nanowires^8,9, a two-dimensional electron gas¹⁰, carbon nanotubes¹¹ and graphene^12,13. However, given the challenge of balancing non-linearity, dissipation, participation and energy scale, parametric amplifiers have not yet been implemented with a semiconductor weak link. Here, we demonstrate a parametric amplifier leveraging a graphene Josephson junction and show that its working frequency is widely tunable with a gate voltage. We report gain exceeding 20 dB and noise performance close to the standard quantum limit. Our results expand the toolset for electrically tunable superconducting quantum circuits. They also offer opportunities for the development of quantum technologies such as quantum computing, quantum sensing and for fundamental science¹⁴.

Quantum-noise-limited microwave amplification using a graphene Josephson junction

Josephson junctions (JJs) and their tunable properties, including their nonlinearities, play an important role in superconducting qubits and amplifiers. JJs together with the circuit quantum electrodynamics architecture form many key components of quantum information processing¹. In quantum circuits, low-noise amplification of feeble microwave signals is essential, and Josephson parametric amplifiers (JPAs)² are the widely used devices. The existing JPAs are based on Al-AlO_x-Al tunnel junctions realized in a superconducting quantum interference device geometry, where magnetic flux is the knob for tuning the frequency. Recent experimental realizations of two-dimensional (2D) van der Waals JJs^3-5 provide an opportunity to implement various circuit quantum electrodynamics devices^6-8 with the added advantage of tuning the junction properties and the operating point using a gate potential. While other components of a possible 2D van der Waals circuit quantum electrodynamics architecture have been demonstrated, a quantum-noise-limited amplifier, an essential component, has not been realized, to the best of our knowledge. Here we implement a quantum-noise-limited JPA using a graphene JJ, that has a linear resonance gate tunability of 3.5 GHz. We report 24 dB amplification with 10 MHz bandwidth and -130 dBm saturation power, a performance on par with the best single-junction JPAs^2,9. Importantly, our gate-tunable JPA works in the quantum-limited noise regime, which makes it an attractive option for highly sensitive signal processing. Our work has implications for novel bolometers; the low heat capacity of graphene together with JJ nonlinearity can result in an extremely sensitive microwave bolometer embedded inside a quantum-noise-limited amplifier. In general, this work will open up the exploration of scalable device architectures of 2D van der Waals materials by integrating a sensor with the quantum amplifier.

Recent Progress in 1D Contacts for 2D-Material-Based Devices

Recent studies have intensively examined 2D materials (2DMs) as promising materials for use in future quantum devices due to their atomic thinness. However, a major limitation occurs when 2DMs are in contact with metals: a van der Waals (vdW) gap is generated at the 2DM-metal interfaces, which induces metal-induced gap states that are responsible for an uncontrollable Schottky barrier (SB), Fermi-level pinning (FLP), and high contact resistance (R_C ), thereby substantially lowering the electronic mobility of 2DM-based devices. Here, vdW-gap-free 1D edge contact is reviewed for use in 2D devices with substantially suppressed carrier scattering of 2DMs with hexagonal boron nitride (hBN) encapsulation. The 1D contact further enables uniform carrier transport across multilayered 2DM channels, high-density transistor integration independent of scaling, and the fabrication of double-gate transistors suitable for demonstrating unique quantum phenomena of 2DMs. The existing 1D contact methods are reviewed first. As a promising technology toward the large-scale production of 2D devices, seamless lateral contacts are reviewed in detail. The electronic, optoelectronic, and quantum devices developed via 1D contacts are subsequently discussed. Finally, the challenges regarding the reliability of 1D contacts are addressed, followed by an outlook of 1D contact methods.

Revealing the Thermal Properties of Superconducting Magic-Angle Twisted Bilayer Graphene

The allegedly unconventional superconducting phase of magic-angle twisted bilayer graphene (MATBG) has been predicted to possess extraordinary thermal properties, as it is formed from a highly diluted electron ensemble with a record-low carrier density (n) of ∼10¹¹ cm^-2 and electronic heat capacity (C_e) of <100k_B. While these attributes position MATBG as a ground-breaking material platform for revolutionary calorimetric applications, these properties have so far not been experimentally shown. Here, we reveal the thermal properties of superconducting MATBG by monitoring its temperature dependent critical current (I_c) under continuous laser heating at 1550 nm. From the bolometric effect, we extract the temperature dependence of the electronic thermal conductance (G_th), which has a value of G_th = 0.2 pW/K at 35 mK and in the low temperature limit is consistent with a power law dependence, as expected for nodal superconductors. Our work lays the foundation for future thermal transport studies on this system.

Approaching microwave photon sensitivity with Al Josephson junctions

Here, we experimentally test the applicability of an aluminium Josephson junction of a few micrometers size as a single photon counter in the microwave frequency range. We have measured the switching from the superconducting to the resistive state through the absorption of 10 GHz photons. The dependence of the switching probability on the signal power suggests that the switching is initiated by the simultaneous absorption of three and more photons, with a dark count time above 0.01 s.

Quantum Wheatstone Bridge

We propose a quantum Wheatstone bridge as a fully quantum analog to the classical version. The bridge is a few-body boundary-driven spin chain exploiting quantum effects to gain an enhanced sensitivity to an unknown coupling. The sensitivity is explained by a drop in population of an entangled Bell state due to destructive interference as the controllable coupling approaches the unknown coupling. A simple criterion for the destructive interference is found, and an approximate expression for the width of the drop is derived. The sensitivity to the unknown coupling is quantified using the quantum Fisher information, and we show that the state of the bridge can be measured indirectly through the spin current. Our results are robust toward calibration errors and generic in the sense that several of the current state-of-the-art quantum platforms could be used as a means of realization. The quantum Wheatstone bridge may thus find use in fields such as sensing and metrology using near-term quantum devices.

Pristine PN junction toward atomic layer devices

In semiconductor manufacturing, PN junction is formed by introducing dopants to activate neighboring electron and hole conductance. To avoid structural distortion and failure, it generally requires the foreign dopants localize in the designated micro-areas. This, however, is challenging due to an inevitable interdiffusion process. Here we report a brand-new junction architecture, called "layer PN junction", that might break through such limit and help redefine the semiconductor device architecture. Different from all existing semiconductors, we find that a variety of van der Waals materials are doping themselves from n- to p-type conductance with an increasing/decreasing layer-number. It means the capability of constructing homogeneous PN junctions in monolayers' dimension/precision, with record high rectification-ratio (>10⁵) and low cut-off current (<1 pA). More importantly, it spawns intriguing functionalities, like gate-switchable-rectification and noise-signal decoupled avalanching. Findings disclosed here might open up a path to develop novel nanodevice applications, where the geometrical size becomes the only critical factor in tuning charge-carrier distribution and thus functionality.

Mechanisms of Interface Cleaning in Heterostructures Made from Polymer-Contaminated Graphene

Heterostructures obtained from layered assembly of 2D materials such as graphene and hexagonal boron nitride have potential in the development of new electronic devices. Whereas various materials techniques can now produce macroscopic scale graphene, the construction of similar size heterostructures with atomically clean interfaces is still unrealized. A primary barrier has been the inability to remove polymeric residues from the interfaces that arise between layers when fabricating heterostructures. Here, the interface cleaning problem of polymer-contaminated heterostructures is experimentally studied from an energy viewpoint. With this approach, it is established that the interface cleaning mechanism involves a combination of thermally activated polymer residue mobilization and their mechanical actuation. This framework allows a systematic approach for fabricating record large-area clean heterostructures from polymer-contaminated graphene. These heterostructures provide state-of-the-art electronic performance. This study opens new strategies for the scalable production of layered materials heterostructures.

Quantum emitters and detectors based on 2D van der Waals materials

Light plays an essential role in our world, with several technologies relying on it. Photons will also play an important role in the emerging quantum technologies, which are primed to have a transformative effect on our society. The development of single-photon sources and ultra-sensitive photon detectors is crucial. Solid-state emitters are being heavily pursued for developing truly single-photon sources for scalable technology. On the detectors' side, the main challenge lies in inventing sensitive detectors operating at sub-optical frequencies. This review highlights the promising research being conducted for the development of quantum emitters and detectors based on two-dimensional van der Waals (2D-vdW) materials. Several 2D-vdW materials, from canonical graphene to transition metal dichalcogenides and their heterostructures, have generated a lot of excitement due to their tunable emission and detection properties. The recent developments in the creation, fabrication and control of quantum emitters hosted by 2D-vdW materials and their potential applications in integrated photonic devices are discussed. Furthermore, the progress in enhancing the photon-counting potential of 2D material-based detectors, viz. 2D photodetectors, bolometers and superconducting single-photon detectors functioning at various wavelengths is also reported.

The field-free Josephson diode in a van der Waals heterostructure

The superconducting analogue to the semiconducting diode, the Josephson diode, has long been sought with multiple avenues to realization being proposed by theorists^1-3. Showing magnetic-field-free, single-directional superconductivity with Josephson coupling, it would serve as the building block for next-generation superconducting circuit technology. Here we realized the Josephson diode by fabricating an inversion symmetry breaking van der Waals heterostructure of NbSe₂/Nb₃Br₈/NbSe₂. We demonstrate that even without a magnetic field, the junction can be superconducting with a positive current while being resistive with a negative current. The ΔI_c behaviour (the difference between positive and negative critical currents) with magnetic field is symmetric and Josephson coupling is proved through the Fraunhofer pattern. Also, stable half-wave rectification of a square-wave excitation was achieved with a very low switching current density, high rectification ratio and high robustness. This non-reciprocal behaviour strongly violates the known Josephson relations and opens the door to discover new mechanisms and physical phenomena through integration of quantum materials with Josephson junctions, and provides new avenues for superconducting quantum devices.

2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges

A grand family of two-dimensional (2D) materials and their heterostructures have been discovered through the extensive experimental and theoretical efforts of chemists, material scientists, physicists, and technologists. These pioneering works contribute to realizing the fundamental platforms to explore and analyze new physical/chemical properties and technological phenomena at the micro-nano-pico scales. Engineering 2D van der Waals (vdW) materials and their heterostructures via chemical and physical methods with a suitable choice of stacking order, thickness, and interlayer interactions enable exotic carrier dynamics, showing potential in high-frequency electronics, broadband optoelectronics, low-power neuromorphic computing, and ubiquitous electronics. This comprehensive review addresses recent advances in terms of representative 2D materials, the general fabrication methods, and characterization techniques and the vital role of the physical parameters affecting the quality of 2D heterostructures. The main emphasis is on 2D heterostructures and 3D-bulk (3D) hybrid systems exhibiting intrinsic quantum mechanical responses in the optical, valley, and topological states. Finally, we discuss the universality of 2D heterostructures with representative applications and trends for future electronics and optoelectronics (FEO) under the challenges and opportunities from physical, nanotechnological, and material synthesis perspectives.

Electronic thermal transport measurement in low-dimensional materials with graphene non-local noise thermometry

In low-dimensional systems, the combination of reduced dimensionality, strong interactions and topology has led to a growing number of many-body quantum phenomena. Thermal transport, which is sensitive to all energy-carrying degrees of freedom, provides a discriminating probe of emergent excitations in quantum materials and devices. However, thermal transport measurements in low dimensions are dominated by the phonon contribution of the lattice, requiring an experimental approach to isolate the electronic thermal conductance. Here we measured non-local voltage fluctuations in a multi-terminal device to reveal the electronic heat transported across a mesoscopic bridge made of low-dimensional materials. Using two-dimensional graphene as a noise thermometer, we measured the quantitative electronic thermal conductance of graphene and carbon nanotubes up to 70 K, achieving a precision of ~1% of the thermal conductance quantum at 5 K. Employing linear and nonlinear thermal transport, we observed signatures of energy transport mediated by long-range interactions in one-dimensional electron systems, in agreement with a theoretical model.

Preparation and Bolometric Responses of MoS2 Nanoflowers and Multi-Walled Carbon Nanotube Composite Network

Due to their broadband optical absorption ability and fast response times, carbon nanotube (CNT)-based materials are considered promising alternatives to the toxic compounds used in commercial infrared sensors. However, the direct use of pure CNT networks as infrared sensors for simple resistance read-outs results in low sensitivity values. In this work, MoS2 nanoflowers are composited with CNT networks via a facile hydrothermal process to increase the bolometric performance. The thermal diffusivity (α) against temperature (T) is measured using the transient electro-thermal (TET) technique in the range of 320 K to 296 K. The α-T curve demonstrates that the composite containing MoS2 nanoflowers provides significant phonon scattering and affects the intertube interfaces, decreasing the α value by 51%. As the temperature increases from 296 K to 320 K, the relative temperature coefficient of resistance (TCR) increases from 0.04%/K to 0.25%/K. Combined with the enhanced light absorption and strong anisotropic structure, this CNT–MoS2 composite network exhibits a more than 5-fold greater surface temperature increase under the same laser irradiation. It shows up to 18-fold enhancements in resistive responsivity ((Ron − Roff)/Roff) compared with the pure CNT network for a 1550 nm laser at room temperature (RT).

Engineering sensitivity and spectral range of photodetection in van der Waals materials and hybrids

Exploration of van der Waals heterostructures in the field of optoelectronics has produced photodetectors with very high bandwidth as well as ultra-high sensitivity. Appropriate engineering of these heterostructures allows us to exploit multiple light-to-electricity conversion mechanisms, ranging from photovoltaic, photoconductive to photogating processes. These mechanisms manifest in different sensitivity and speed of photoresponse. In addition, integrating graphene-based hybrid structures with photonic platforms provides a high gain-bandwidth product, with bandwidths ≫1 GHz. In this review, we discuss the progression in the field of photodetection in 2D hybrids. We emphasize the physical mechanisms at play in diverse architectures and discuss the origin of enhanced photoresponse in hybrids. Recent developments in 2D photodetectors based on room temperature detection, photon-counting ability, integration with Si and other pressing issues, that need to be addressed for these materials to be integrated with industrial standards have been discussed.

Miniaturizing Transmon Qubits Using van der Waals Materials

Quantum computers can potentially achieve an exponential speedup versus classical computers on certain computational tasks, recently demonstrated in superconducting qubit processors. However, the capacitor electrodes that comprise these qubits must be large in order to avoid lossy dielectrics. This tactic hinders scaling by increasing parasitic coupling among circuit components, degrading individual qubit addressability, and limiting the spatial density of qubits. Here, we take advantage of the unique properties of van der Waals (vdW) materials to reduce the qubit area by >1000 times while preserving the capacitance while maintaining quantum coherence. Our qubits combine conventional aluminum-based Josephson junctions with parallel-plate capacitors composed of crystalline layers of superconducting niobium diselenide and insulating hexagonal boron nitride. We measure a vdW transmon T₁ relaxation time of 1.06 μs, demonstrating a path to achieve high-qubit-density quantum processors with long coherence times, and the broad utility of layered heterostructures in low-loss, high-coherence quantum devices.

Critical current fluctuations in graphene Josephson junctions

We have studied 1/f noise in critical current [Formula: see text] in h-BN encapsulated monolayer graphene contacted by NbTiN electrodes. The sample is close to diffusive limit and the switching supercurrent with hysteresis at Dirac point amounts to [Formula: see text] nA. The low frequency noise in the superconducting state is measured by tracking the variation in magnitude and phase of a reflection carrier signal [Formula: see text] at 600-650 MHz. We find 1/f critical current fluctuations on the order of [Formula: see text] per unit band at 1 Hz. The noise power spectrum of critical current fluctuations [Formula: see text] measured near the Dirac point at large, sub-critical rf-carrier amplitudes obeys the law [Formula: see text] where [Formula: see text] and [Formula: see text] at [Formula: see text] Hz. Our results point towards significant fluctuations in [Formula: see text] originating from variation of the proximity induced gap in the graphene junction.

Recent Progress in the Development of Graphene Detector for Terahertz Detection

Terahertz waves are expected to be used in next-generation communications, detection, and other fields due to their unique characteristics. As a basic part of the terahertz application system, the terahertz detector plays a key role in terahertz technology. Due to the two-dimensional structure, graphene has unique characteristics features, such as exceptionally high electron mobility, zero band-gap, and frequency-independent spectral absorption, particularly in the terahertz region, making it a suitable material for terahertz detectors. In this review, the recent progress of graphene terahertz detectors related to photovoltaic effect (PV), photothermoelectric effect (PTE), bolometric effect, and plasma wave resonance are introduced and discussed.

Ultrasensitive Calorimetric Measurements of the Electronic Heat Capacity of Graphene

Heat capacity is an invaluable quantity in condensed matter physics and yet has been completely inaccessible in two-dimensional (2D) van der Waals (vdW) materials, owing to their ultrafast thermal relaxation times and the lack of suitable nanoscale thermometers. Here, we demonstrate a novel thermal relaxation calorimetry scheme that allows the first measurements of the electronic heat capacity of graphene. It is enabled by combining a radio frequency Johnson noise thermometer, which can measure the electronic temperature with a sensitivity of ∼20 mK/Hz^1/2, and a photomixed optical heater that modulates T_e with a frequency of up to Ω = 0.2 THz. This allows record sensitive measurements of the electronic heat capacity C_e < 10 ^-19 J/K and the fastest measurement of electronic thermal relaxation time τ_e < 10 ^-12 s yet achieved by a calorimeter. These features advance heat capacity metrology into the realm of nanoscale and low-dimensional systems and provide an avenue for the investigation of their thermodynamic quantities.

Hot carriers in graphene - fundamentals and applications

Hot charge carriers in graphene exhibit fascinating physical phenomena, whose understanding has improved greatly over the past decade. They have distinctly different physical properties compared to, for example, hot carriers in conventional metals. This is predominantly the result of graphene's linear energy-momentum dispersion, its phonon properties, its all-interface character, and the tunability of its carrier density down to very small values, and from electron- to hole-doping. Since a few years, we have witnessed an increasing interest in technological applications enabled by hot carriers in graphene. Of particular interest are optical and optoelectronic applications, where hot carriers are used to detect (photodetection), convert (nonlinear photonics), or emit (luminescence) light. Graphene-enabled systems in these application areas could find widespread use and have a disruptive impact, for example in the field of data communication, high-frequency electronics, and industrial quality control. The aim of this review is to provide an overview of the most relevant physics and working principles that are relevant for applications exploiting hot carriers in graphene.

Josephson junction infrared single-photon detector

Josephson junctions are superconducting devices used as high-sensitivity magnetometers and voltage amplifiers as well as the basis of high-performance cryogenic computers and superconducting quantum computers. Although device performance can be degraded by the generation of quasiparticles formed from broken Cooper pairs, this phenomenon also opens opportunities to sensitively detect electromagnetic radiation. We demonstrate single near-infrared photon detection by coupling photons to the localized surface plasmons of a graphene-based Josephson junction. Using the photon-induced switching statistics of the current-biased device, we reveal the critical role of quasiparticles generated by the absorbed photon in the detection mechanism. The photon sensitivity will enable a high-speed, low-power optical interconnect for future superconducting computing architectures.

Tunnel field-effect transistors for sensitive terahertz detection

The rectification of electromagnetic waves to direct currents is a crucial process for energy harvesting, beyond-5G wireless communications, ultra-fast science, and observational astronomy. As the radiation frequency is raised to the sub-terahertz (THz) domain, ac-to-dc conversion by conventional electronics becomes challenging and requires alternative rectification protocols. Here, we address this challenge by tunnel field-effect transistors made of bilayer graphene (BLG). Taking advantage of BLG's electrically tunable band structure, we create a lateral tunnel junction and couple it to an antenna exposed to THz radiation. The incoming radiation is then down-converted by the tunnel junction nonlinearity, resulting in high responsivity (>4 kV/W) and low-noise (0.2 pW/[Formula: see text]) detection. We demonstrate how switching from intraband Ohmic to interband tunneling regime can raise detectors' responsivity by few orders of magnitude, in agreement with the developed theory. Our work demonstrates a potential application of tunnel transistors for THz detection and reveals BLG as a promising platform therefor.

Outstanding Radiation Tolerance of Supported Graphene: Towards 2D Sensors for the Space Millimeter Radioastronomy

We experimentally and theoretically investigated the effects of ionizing radiation on a stack of graphene sheets separated by polymethyl methacrylate (PMMA) slabs. The exceptional absorption ability of such a heterostructure in the THz range makes it promising for use in a graphene-based THz bolometer to be deployed in space. A hydrogen/carbon ion beam was used to simulate the action of protons and secondary ions on the device. We showed that the graphene sheets remain intact after irradiation with an intense 290 keV ion beam at the density of 1.5 × 1012 cm−2. However, the THz absorption ability of the graphene/PMMA multilayer can be substantially suppressed due to heating damage of the topmost PMMA slabs produced by carbon ions. By contrast, protons do not have this negative effect due to their much longer mean free pass in PMMA. Since the particles’ flux at the geostationary orbit is significantly lower than that used in our experiments, we conclude that it cannot cause tangible damage of the graphene/PMMA based THz absorber. Our numerical simulations reveal that, at the geostationary orbit, the damaging of the graphene/PMMA multilayer due to the ions bombardment is sufficiently lower to affect the performance of the graphene/PMMA multilayer, the main working element of the THz bolometer, which remains unchanged for more than ten years.