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Hu Y, Yang J, Liu S. Giant Piezoelectric Effects of Topological Structures in Stretched Ferroelectric Membranes. PHYSICAL REVIEW LETTERS 2024; 133:046802. [PMID: 39121403 DOI: 10.1103/physrevlett.133.046802] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/02/2024] [Accepted: 06/18/2024] [Indexed: 08/11/2024]
Abstract
Freestanding ferroelectric oxide membranes emerge as a promising platform for exploring the interplay between topological polar ordering and dipolar interactions that are continuously tunable by strain. Our investigations combining density functional theory (DFT) and deep-learning-assisted molecular dynamics simulations demonstrate that DFT-predicted strain-driven morphotropic phase boundary involving monoclinic phases manifest as diverse domain structures at room temperatures, featuring continuous distributions of dipole orientations and mobile domain walls. Detailed analysis of dynamic structures reveals that the enhanced piezoelectric response observed in stretched PbTiO_{3} membranes results from small-angle rotations of dipoles at domain walls, distinct from conventional polarization rotation mechanism and adaptive phase theory inferred from static structures. We identify a ferroelectric topological structure, termed "dipole spiral," which exhibits a giant intrinsic piezoelectric response (>320 pC/N). This helical structure, possessing a rotational zero-energy mode, unlocks new possibilities for exploring chiral phonon dynamics and dipolar Dzyaloshinskii-Moriya-like interactions.
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Affiliation(s)
- Yihao Hu
- Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science, Westlake University, Hangzhou, Zhejiang 310024, China
| | - Jiyuan Yang
- Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science, Westlake University, Hangzhou, Zhejiang 310024, China
| | - Shi Liu
- Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science, Westlake University, Hangzhou, Zhejiang 310024, China
- Institute of Natural Sciences, Westlake Institute for Advanced Study, Hangzhou, Zhejiang 310024, China
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2
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Chaudron A, Li Z, Finco A, Marton P, Dufour P, Abdelsamie A, Fischer J, Collin S, Dkhil B, Hlinka J, Jacques V, Chauleau JY, Viret M, Bouzehouane K, Fusil S, Garcia V. Electric-field-induced multiferroic topological solitons. NATURE MATERIALS 2024; 23:905-911. [PMID: 38710799 DOI: 10.1038/s41563-024-01890-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/20/2023] [Accepted: 04/04/2024] [Indexed: 05/08/2024]
Abstract
Topologically protected spin whirls in ferromagnets are foreseen as the cart-horse of solitonic information technologies. Nevertheless, the future of skyrmionics may rely on antiferromagnets due to their immunity to dipolar fields, straight motion along the driving force and ultrafast dynamics. While complex topological objects were recently discovered in intrinsic antiferromagnets, mastering their nucleation, stabilization and manipulation with energy-efficient means remains an outstanding challenge. Designing topological polar states in magnetoelectric antiferromagnetic multiferroics would allow one to electrically write, detect and erase topological antiferromagnetic entities. Here we stabilize ferroelectric centre states using a radial electric field in multiferroic BiFeO3 thin films. We show that such polar textures contain flux closures of antiferromagnetic spin cycloids, with distinct antiferromagnetic entities at their cores depending on the electric field polarity. By tuning the epitaxial strain, quadrants of canted antiferromagnetic domains can also be electrically designed. These results open the path to reconfigurable topological states in multiferroic antiferromagnets.
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Affiliation(s)
- Arthur Chaudron
- Laboratoire Albert Fert, CNRS, Thales, Université Paris-Saclay, Palaiseau, France
| | - Zixin Li
- Service de Physique de l'Etat Condensé (SPEC), French National Atomic Energy Commission (CEA), CNRS, Université Paris-Saclay, Gif-sur-Yvette, France
| | - Aurore Finco
- Laboratoire Charles Coulomb, Université de Montpellier, CNRS, Montpellier, France
| | - Pavel Marton
- Institute of Physics, Czech Academy of Sciences, Prague, Czech Republic
- Institute of Mechatronics and Computer Engineering, Technical University of Liberec, Liberec, Czech Republic
| | - Pauline Dufour
- Laboratoire Albert Fert, CNRS, Thales, Université Paris-Saclay, Palaiseau, France
| | - Amr Abdelsamie
- Laboratoire Albert Fert, CNRS, Thales, Université Paris-Saclay, Palaiseau, France
- Laboratoire Charles Coulomb, Université de Montpellier, CNRS, Montpellier, France
| | - Johanna Fischer
- Laboratoire Albert Fert, CNRS, Thales, Université Paris-Saclay, Palaiseau, France
| | - Sophie Collin
- Laboratoire Albert Fert, CNRS, Thales, Université Paris-Saclay, Palaiseau, France
| | - Brahim Dkhil
- Laboratoire Structures, Propriétés et Modélisation des Solides (SPMS), Université Paris-Saclay, CentraleSupélec, CNRS, Gif-sur-Yvette, France
| | - Jirka Hlinka
- Institute of Physics, Czech Academy of Sciences, Prague, Czech Republic
| | - Vincent Jacques
- Laboratoire Charles Coulomb, Université de Montpellier, CNRS, Montpellier, France
| | - Jean-Yves Chauleau
- Service de Physique de l'Etat Condensé (SPEC), French National Atomic Energy Commission (CEA), CNRS, Université Paris-Saclay, Gif-sur-Yvette, France
| | - Michel Viret
- Service de Physique de l'Etat Condensé (SPEC), French National Atomic Energy Commission (CEA), CNRS, Université Paris-Saclay, Gif-sur-Yvette, France
| | - Karim Bouzehouane
- Laboratoire Albert Fert, CNRS, Thales, Université Paris-Saclay, Palaiseau, France
| | - Stéphane Fusil
- Laboratoire Albert Fert, CNRS, Thales, Université Paris-Saclay, Palaiseau, France.
- Université d'Evry, Université Paris-Saclay, Evry, France.
| | - Vincent Garcia
- Laboratoire Albert Fert, CNRS, Thales, Université Paris-Saclay, Palaiseau, France.
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3
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Wang J, Liu Z, Wang Q, Nie F, Chen Y, Tian G, Fang H, He B, Guo J, Zheng L, Li C, Lü W, Yan S. Ultralow Strain-Induced Emergent Polarization Structures in a Flexible Freestanding BaTiO 3 Membrane. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2401657. [PMID: 38647365 PMCID: PMC11220712 DOI: 10.1002/advs.202401657] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/16/2024] [Indexed: 04/25/2024]
Abstract
The engineering of ferroic orders, which involves the evolution of atomic structure and local ferroic configuration in the development of next-generation electronic devices. Until now, diverse polarization structures and topological domains are obtained in ferroelectric thin films or heterostructures, and the polarization switching and subsequent domain nucleation are found to be more conducive to building energy-efficient and multifunctional polarization structures. In this work, a continuous and periodic strain in a flexible freestanding BaTiO3 membrane to achieve a zigzag morphology is introduced. The polar head/tail boundaries and vortex/anti-vortex domains are constructed by a compressive strain as low as ≈0.5%, which is extremely lower than that used in epitaxial rigid ferroelectrics. Overall, this study c efficient polarization structures, which is of both theoretical value and practical significance for the development of next-generation flexible multifunctional devices.
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Affiliation(s)
- Jie Wang
- Spintronics InstituteSchool of Physics and TechnologyUniversity of JinanJinan250022China
- Functional Materials and Acousto‐Optic Instruments InstituteSchool of Instrumentation Science and EngineeringHarbin Institute of TechnologyHarbin150080China
- School of PhysicsState Key Laboratory of Crystal MaterialsShandong UniversityJinan250100China
| | - Zhen Liu
- School of Materials Science and EngineeringNanjing University of Science and TechnologyNanjing210094China
| | - Qixiang Wang
- Spintronics InstituteSchool of Physics and TechnologyUniversity of JinanJinan250022China
| | - Fang Nie
- School of PhysicsState Key Laboratory of Crystal MaterialsShandong UniversityJinan250100China
| | - Yanan Chen
- Spintronics InstituteSchool of Physics and TechnologyUniversity of JinanJinan250022China
| | - Gang Tian
- School of PhysicsState Key Laboratory of Crystal MaterialsShandong UniversityJinan250100China
| | - Hong Fang
- Spintronics InstituteSchool of Physics and TechnologyUniversity of JinanJinan250022China
- Functional Materials and Acousto‐Optic Instruments InstituteSchool of Instrumentation Science and EngineeringHarbin Institute of TechnologyHarbin150080China
- School of PhysicsState Key Laboratory of Crystal MaterialsShandong UniversityJinan250100China
| | - Bin He
- Spintronics InstituteSchool of Physics and TechnologyUniversity of JinanJinan250022China
| | - Jinrui Guo
- Spintronics InstituteSchool of Physics and TechnologyUniversity of JinanJinan250022China
| | - Limei Zheng
- School of PhysicsState Key Laboratory of Crystal MaterialsShandong UniversityJinan250100China
| | - Changjian Li
- Department of Materials Science and EngineeringSouthern University of Science and TechnologyShenzhenGuangdong518055China
- Guangdong Provincial Key Laboratory of Functional Oxide Materials and DevicesSouthern University of Science and TechnologyShenzhenGuangdong518055China
| | - Weiming Lü
- Spintronics InstituteSchool of Physics and TechnologyUniversity of JinanJinan250022China
- Functional Materials and Acousto‐Optic Instruments InstituteSchool of Instrumentation Science and EngineeringHarbin Institute of TechnologyHarbin150080China
| | - Shishen Yan
- Spintronics InstituteSchool of Physics and TechnologyUniversity of JinanJinan250022China
- School of PhysicsState Key Laboratory of Crystal MaterialsShandong UniversityJinan250100China
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4
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Huang S, Xu S, Ma C, Li P, Guo EJ, Ge C, Wang C, Xu X, He M, Yang G, Jin K. Ferroelectric Order Evolution in Freestanding PbTiO 3 Films Monitored by Optical Second Harmonic Generation. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024:e2307571. [PMID: 38923859 DOI: 10.1002/advs.202307571] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/06/2023] [Revised: 05/30/2024] [Indexed: 06/28/2024]
Abstract
The demand for low-dimensional ferroelectric devices is steadily increasing, however, the thick substrates in epitaxial films impede further size miniaturization. Freestanding films offer a potential solution by eliminating substrate constraints. Nevertheless, it remains an ongoing challenge to improve the stability in thin and fragile freestanding films under strain and temperature. In this work, the structure and ferroelectric order of freestanding PbTiO3 (PTO) films are investigated under continuous variation of the strain and temperature using nondestructive optical second harmonic generation (SHG) technique. The findings reveal that there are both out-of-plane and in-plane domains with polarization along out-of-plane and in-plane directions in the orthorhombic-like freestanding PTO films, respectively. In contrast, only out-of-plane domains are observed in the tetragonal epitaxial PTO films. Remarkably, the ferroelectricity of freestanding PTO films is strengthened under small uniaxial tensile strain from 0% up to 1.66% and well-maintained under larger biaxial tensile strain up to 2.76% along the [100] direction and up to 4.46% along the [010] direction. Moreover, a high Curie temperature of 630 K is identified in 50 nm thick freestanding PTO films by wide-temperature-range SHG. These findings provide valuable understanding for the development of the next-generation electronic nanodevices with flexibility and thermostability.
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Affiliation(s)
- Sisi Huang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Shuai Xu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Cheng Ma
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Pengzhan Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Er-Jia Guo
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Chen Ge
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Can Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Xiulai Xu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Meng He
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Guozhen Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Kuijuan Jin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
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5
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Zhang P, Li Q, Li Z, Shi X, Wang H, Huo C, Zhou L, Kuang X, Lin K, Cao Y, Deng J, Yu C, Chen X, Miao J, Xing X. Intrinsic-strain-induced ferroelectric order and ultrafine nanodomains in SrTiO 3. Proc Natl Acad Sci U S A 2024; 121:e2400568121. [PMID: 38857392 PMCID: PMC11194550 DOI: 10.1073/pnas.2400568121] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/13/2024] [Accepted: 04/27/2024] [Indexed: 06/12/2024] Open
Abstract
Nano ferroelectrics holds the potential application promise in information storage, electro-mechanical transformation, and novel catalysts but encounters a huge challenge of size limitation and manufacture complexity on the creation of long-range ferroelectric ordering. Herein, as an incipient ferroelectric, nanosized SrTiO3 was indued with polarized ordering at room temperature from the nonpolar cubic structure, driven by the intrinsic three-dimensional (3D) tensile strain. The ferroelectric behavior can be confirmed by piezoelectric force microscopy and the ferroelectric TO1 soft mode was verified with the temperature stability to 500 K. Its structural origin comes from the off-center shift of Ti atom to oxygen octahedron and forms the ultrafine head-to-tail connected 90° nanodomains about 2 to 3 nm, resulting in an overall spontaneous polarization toward the short edges of nanoparticles. According to the density functional theory calculations and phase-field simulations, the 3D strain-related dipole displacement transformed from [001] to [111] and segmentation effect on the ferroelectric domain were further proved. The topological ferroelectric order induced by intrinsic 3D tensile strain shows a unique approach to get over the nanosized limitation in nanodevices and construct the strong strain-polarization coupling, paving the way for the design of high-performance and free-assembled ferroelectric devices.
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Affiliation(s)
- Peixi Zhang
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, University of Science and Technology Beijing, Beijing100083, China
| | - Qiang Li
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, University of Science and Technology Beijing, Beijing100083, China
| | - Zhiguo Li
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, University of Science and Technology Beijing, Beijing100083, China
| | - Xiaoming Shi
- Department of Physics, University of Science and Technology Beijing, Beijing100083, China
| | - Haoyu Wang
- Department of Physics, University of Science and Technology Beijing, Beijing100083, China
| | - Chuanrui Huo
- Beijing Advanced Innovation Center for Materials Genome Engineering, Department of Physical Chemistry, University of Science and Technology Beijing, Beijing100083, China
| | - Lihui Zhou
- Key Laboratory for Advanced Materials and Joint International Research Laboratory of Precision Chemistry and Molecular Engineering, Feringa Nobel Prize Scientist Joint Research Center, School of Chemistry and Molecular Engineering, East China University of Science and Technology, Shanghai200237, China
| | - Xiaojun Kuang
- Guangxi Key Laboratory of Electrochemical and Magnetochemical Functional Materials, College of Chemistry and Bioengineering, Guilin University of Technology, Guilin541006, China
| | - Kun Lin
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, University of Science and Technology Beijing, Beijing100083, China
| | - Yili Cao
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, University of Science and Technology Beijing, Beijing100083, China
| | - Jinxia Deng
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, University of Science and Technology Beijing, Beijing100083, China
| | - Chengyi Yu
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, University of Science and Technology Beijing, Beijing100083, China
| | - Xin Chen
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, University of Science and Technology Beijing, Beijing100083, China
| | - Jun Miao
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, University of Science and Technology Beijing, Beijing100083, China
| | - Xianran Xing
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, University of Science and Technology Beijing, Beijing100083, China
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6
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Lafuente-Bartolome J, Lian C, Giustino F. Topological polarons in halide perovskites. Proc Natl Acad Sci U S A 2024; 121:e2318151121. [PMID: 38758696 PMCID: PMC11127022 DOI: 10.1073/pnas.2318151121] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/18/2023] [Accepted: 03/29/2024] [Indexed: 05/19/2024] Open
Abstract
Halide perovskites emerged as a revolutionary family of high-quality semiconductors for solar energy harvesting and energy-efficient lighting. There is mounting evidence that the exceptional optoelectronic properties of these materials could stem from unconventional electron-phonon couplings, and it has been suggested that the formation of polarons and self-trapped excitons could be key to understanding such properties. By performing first-principles simulations across the length scales, here we show that halide perovskites harbor a uniquely rich variety of polaronic species, including small polarons, large polarons, and charge density waves, and we explain a variety of experimental observations. We find that these emergent quasiparticles support topologically nontrivial phonon fields with quantized topological charge, making them nonmagnetic analog of the helical Bloch points found in magnetic skyrmion lattices.
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Affiliation(s)
- Jon Lafuente-Bartolome
- Oden Institute for Computational Engineering and Sciences, The University of Texas at Austin, Austin, TX78712
- Department of Physics, The University of Texas at Austin, Austin, TX78712
| | - Chao Lian
- Oden Institute for Computational Engineering and Sciences, The University of Texas at Austin, Austin, TX78712
- Department of Physics, The University of Texas at Austin, Austin, TX78712
| | - Feliciano Giustino
- Oden Institute for Computational Engineering and Sciences, The University of Texas at Austin, Austin, TX78712
- Department of Physics, The University of Texas at Austin, Austin, TX78712
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7
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Jani H, Harrison J, Hooda S, Prakash S, Nandi P, Hu J, Zeng Z, Lin JC, Godfrey C, Omar GJ, Butcher TA, Raabe J, Finizio S, Thean AVY, Ariando A, Radaelli PG. Spatially reconfigurable antiferromagnetic states in topologically rich free-standing nanomembranes. NATURE MATERIALS 2024; 23:619-626. [PMID: 38374414 PMCID: PMC11068574 DOI: 10.1038/s41563-024-01806-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/05/2023] [Accepted: 01/11/2024] [Indexed: 02/21/2024]
Abstract
Antiferromagnets hosting real-space topological textures are promising platforms to model fundamental ultrafast phenomena and explore spintronics. However, they have only been epitaxially fabricated on specific symmetry-matched substrates, thereby preserving their intrinsic magneto-crystalline order. This curtails their integration with dissimilar supports, restricting the scope of fundamental and applied investigations. Here we circumvent this limitation by designing detachable crystalline antiferromagnetic nanomembranes of α-Fe2O3. First, we show-via transmission-based antiferromagnetic vector mapping-that flat nanomembranes host a spin-reorientation transition and rich topological phenomenology. Second, we exploit their extreme flexibility to demonstrate the reconfiguration of antiferromagnetic states across three-dimensional membrane folds resulting from flexure-induced strains. Finally, we combine these developments using a controlled manipulator to realize the strain-driven non-thermal generation of topological textures at room temperature. The integration of such free-standing antiferromagnetic layers with flat/curved nanostructures could enable spin texture designs via magnetoelastic/geometric effects in the quasi-static and dynamical regimes, opening new explorations into curvilinear antiferromagnetism and unconventional computing.
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Affiliation(s)
- Hariom Jani
- Clarendon Laboratory, Department of Physics, University of Oxford, Oxford, UK.
- Department of Physics, National University of Singapore, Singapore, Singapore.
| | - Jack Harrison
- Clarendon Laboratory, Department of Physics, University of Oxford, Oxford, UK
| | - Sonu Hooda
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore
| | - Saurav Prakash
- Department of Physics, National University of Singapore, Singapore, Singapore
| | - Proloy Nandi
- Department of Physics, National University of Singapore, Singapore, Singapore
| | - Junxiong Hu
- Department of Physics, National University of Singapore, Singapore, Singapore.
| | - Zhiyang Zeng
- Clarendon Laboratory, Department of Physics, University of Oxford, Oxford, UK
| | - Jheng-Cyuan Lin
- Clarendon Laboratory, Department of Physics, University of Oxford, Oxford, UK
| | - Charles Godfrey
- Clarendon Laboratory, Department of Physics, University of Oxford, Oxford, UK
| | - Ganesh Ji Omar
- Department of Physics, National University of Singapore, Singapore, Singapore
| | - Tim A Butcher
- Swiss Light Source, Paul Scherrer Institut, Villigen, Switzerland
| | - Jörg Raabe
- Swiss Light Source, Paul Scherrer Institut, Villigen, Switzerland
| | - Simone Finizio
- Swiss Light Source, Paul Scherrer Institut, Villigen, Switzerland.
| | - Aaron Voon-Yew Thean
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore
- Integrative Sciences and Engineering Programme, National University of Singapore, Singapore, Singapore
| | - A Ariando
- Department of Physics, National University of Singapore, Singapore, Singapore.
- Integrative Sciences and Engineering Programme, National University of Singapore, Singapore, Singapore.
| | - Paolo G Radaelli
- Clarendon Laboratory, Department of Physics, University of Oxford, Oxford, UK.
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8
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Li W, Liao L, Deng C, Lebudi C, Liu J, Wang S, Yi D, Wang L, Li JF, Li Q. Artificial Domain Patterning in Ultrathin Ferroelectric Films via Modifying the Surface Electrostatic Boundary Conditions. NANO LETTERS 2024. [PMID: 38619536 DOI: 10.1021/acs.nanolett.4c00479] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/16/2024]
Abstract
Nanoscale spatially controlled modulation of the properties of ferroelectrics via artificial domain pattering is crucial to their emerging optoelectronics applications. New patterning strategies to achieve high precision and efficiency and to link the resultant domain structures with device functionalities are being sought. Here, we present an epitaxial heterostructure of SrRuO3/PbTiO3/SrRuO3, wherein the domain configuration is delicately determined by the charge screening conditions in the SrRuO3 layer and the substrate strains. Chemical etching of the top SrRuO3 layer leads to a transition from in-plane a domains to out-of-plane c domains, accompanied by a giant (>105) modification in the second harmonic generation response. The modulation effect, coupled with the plasmonic resonance effect from SrRuO3, enables a highly flexible design of nonlinear optical devices, as demonstrated by a simulated split-ring resonator metasurface. This domain patterning strategy may be extended to more thin-film ferroelectric systems with domain stabilities amenable to electrostatic boundary conditions.
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Affiliation(s)
- Wei Li
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Lei Liao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Chenguang Deng
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Collieus Lebudi
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Jingchun Liu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Sixu Wang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Di Yi
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Lifen Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Jing-Feng Li
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Qian Li
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
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9
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Nian L, Sun H, Wang Z, Xu D, Hao B, Yan S, Li Y, Zhou J, Deng Y, Hao Y, Nie Y. Sr 4Al 2O 7: A New Sacrificial Layer with High Water Dissolution Rate for the Synthesis of Freestanding Oxide Membranes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2307682. [PMID: 38238890 DOI: 10.1002/adma.202307682] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/31/2023] [Revised: 12/18/2023] [Indexed: 02/01/2024]
Abstract
Freestanding perovskite oxide membranes have drawn great attention recently since they offer exceptional structural tunability and stacking ability, providing new opportunities in fundamental research and potential device applications in silicon-based semiconductor technology. Among different types of sacrificial layers, the (Ca, Sr, Ba)3Al2O6 compounds are most widely used since they can be dissolved in water and prepare high-quality perovskite oxide membranes with clean and sharp surfaces and interfaces; However, the typical transfer process takes a long time (up to hours) in obtaining millimeter-size freestanding membranes, let alone realize wafer-scale samples with high yield. Here, a new member of the SrO-Al2O3 family, Sr4Al2O7 is introduced, and its high dissolution rate, ≈10 times higher than that of Sr3Al2O6 is demonstrated. The high-dissolution-rate of Sr4Al2O7 is most likely related to the more discrete Al-O networks and higher concentration of water-soluble Sr-O species in this compound. This work significantly facilitates the preparation of freestanding membranes and sheds light on the integration of multifunctional perovskite oxides in practical electronic devices.
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Affiliation(s)
- Leyan Nian
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
- Suzhou Laboratory, Suzhou, 215125, P. R. China
| | - Haoying Sun
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
| | - Zhichao Wang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
| | - Duo Xu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
| | - Bo Hao
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
| | - Shengjun Yan
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
| | - Yueying Li
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
| | - Jian Zhou
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
| | - Yu Deng
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
| | - Yufeng Hao
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
| | - Yuefeng Nie
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
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10
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Aramberri H, Íñiguez-González J. Brownian Electric Bubble Quasiparticles. PHYSICAL REVIEW LETTERS 2024; 132:136801. [PMID: 38613274 DOI: 10.1103/physrevlett.132.136801] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/19/2023] [Accepted: 02/27/2024] [Indexed: 04/14/2024]
Abstract
Recent works on electric bubbles (including the experimental demonstration of electric skyrmions) constitute a breakthrough akin to the discovery of magnetic skyrmions some 15 years ago. So far research has focused on obtaining and visualizing these objects, which often appear to be immobile (pinned) in experiments. Thus, critical aspects of magnetic skyrmions-e.g., their quasiparticle nature, Brownian motion-remain unexplored (unproven) for electric bubbles. Here we use predictive atomistic simulations to investigate the basic dynamical properties of these objects in pinning-free model systems. We show that it is possible to find regimes where the electric bubbles can present long lifetimes (∼ns) despite being relatively small (diameter <2 nm). Additionally, we find that they can display stochastic dynamics with large and highly tunable diffusion constants. We thus establish the quasiparticle nature of electric bubbles and put them forward for the physical effects and applications (e.g., in token-based probabilistic computing) considered for magnetic skyrmions.
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Affiliation(s)
- Hugo Aramberri
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), Avenue des Hauts-Fourneaux 5, L-4362 Esch/Alzette, Luxembourg
| | - Jorge Íñiguez-González
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), Avenue des Hauts-Fourneaux 5, L-4362 Esch/Alzette, Luxembourg
- Department of Physics and Materials Science, University of Luxembourg, Rue du Brill 41, L-4422 Belvaux, Luxembourg
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11
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Shang H, Dong H, Wu Y, Deng F, Liang X, Hu S, Shen S. Mechanical Control of Polar Patterns in Wrinkled Thin Films via Flexoelectricity. PHYSICAL REVIEW LETTERS 2024; 132:116201. [PMID: 38563913 DOI: 10.1103/physrevlett.132.116201] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/20/2023] [Revised: 11/17/2023] [Accepted: 02/09/2024] [Indexed: 04/04/2024]
Abstract
Intriguing topological polar structures in oxide nanofilms have drawn growing attention owing to their immense potential applications in nanoscale electronic devices. Here, we report a novel route to mechanically manipulate polar structures via flexoelectricity in wrinkled thin films. Our results present a flexoelectric polar transition from a nonpolar state to uniaxial polar stripes, biaxial meronlike or antimeronlike polar structures, and polar labyrinths by varying wrinkle morphologies. The evolution mechanisms and the outstanding mechanical tunability of these flexoelectric polar patterns were investigated theoretically and numerically. This strategy based on flexoelectricity for generating nontrivial polar structures will no longer rely on the superlattice structure and can be widely applicable to all centrosymmetric or noncentrosymmetric materials, providing a broader range of material and structure candidates for polar topologies.
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Affiliation(s)
- Hongxing Shang
- State Key Laboratory for Strength and Vibration of Mechanical Structures, School of Aerospace Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Huiting Dong
- State Key Laboratory for Strength and Vibration of Mechanical Structures, School of Aerospace Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Yihan Wu
- State Key Laboratory for Strength and Vibration of Mechanical Structures, School of Aerospace Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Feng Deng
- State Key Laboratory for Strength and Vibration of Mechanical Structures, School of Aerospace Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Xu Liang
- State Key Laboratory for Strength and Vibration of Mechanical Structures, School of Aerospace Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Shuling Hu
- State Key Laboratory for Strength and Vibration of Mechanical Structures, School of Aerospace Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Shengping Shen
- State Key Laboratory for Strength and Vibration of Mechanical Structures, School of Aerospace Engineering, Xi'an Jiaotong University, Xi'an 710049, China
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12
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Wang S, Li W, Deng C, Hong Z, Gao HB, Li X, Gu Y, Zheng Q, Wu Y, Evans PG, Li JF, Nan CW, Li Q. Giant electric field-induced second harmonic generation in polar skyrmions. Nat Commun 2024; 15:1374. [PMID: 38355699 PMCID: PMC10866987 DOI: 10.1038/s41467-024-45755-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/17/2023] [Accepted: 02/04/2024] [Indexed: 02/16/2024] Open
Abstract
Electric field-induced second harmonic generation allows electrically controlling nonlinear light-matter interactions crucial for emerging integrated photonics applications. Despite its wide presence in materials, the figures-of-merit of electric field-induced second harmonic generation are yet to be elevated to enable novel device functionalities. Here, we show that the polar skyrmions, a topological phase spontaneously formed in PbTiO3/SrTiO3 ferroelectric superlattices, exhibit a high comprehensive electric field-induced second harmonic generation performance. The second-order nonlinear susceptibility and modulation depth, measured under non-resonant 800 nm excitation, reach ~54.2 pm V-1 and ~664% V-1, respectively, and high response bandwidth (higher than 10 MHz), wide operating temperature range (up to ~400 K) and good fatigue resistance (>1010 cycles) are also demonstrated. Through combined in-situ experiments and phase-field simulations, we establish the microscopic links between the exotic polarization configuration and field-induced transition paths of the skyrmions and their electric field-induced second harmonic generation response. Our study not only presents a highly competitive thin-film material ready for constructing on-chip devices, but opens up new avenues of utilizing topological polar structures in the fields of photonics and optoelectronics.
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Affiliation(s)
- Sixu Wang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Wei Li
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Chenguang Deng
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Zijian Hong
- School of Materials Science and Engineering, Zhejiang University, 310027, Hangzhou, China.
- Research Institute of Zhejiang University-Taizhou, 318000, Taizhou, Zhejiang, China.
| | - Han-Bin Gao
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, 100190, Beijing, China
| | - Xiaolong Li
- Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, 201204, Shanghai, China
| | - Yueliang Gu
- Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, 201204, Shanghai, China
| | - Qiang Zheng
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, 100190, Beijing, China.
| | - Yongjun Wu
- School of Materials Science and Engineering, Zhejiang University, 310027, Hangzhou, China
| | - Paul G Evans
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA
| | - Jing-Feng Li
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Ce-Wen Nan
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Qian Li
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China.
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13
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Sánchez-Santolino G, Rouco V, Puebla S, Aramberri H, Zamora V, Cabero M, Cuellar FA, Munuera C, Mompean F, Garcia-Hernandez M, Castellanos-Gomez A, Íñiguez J, Leon C, Santamaria J. A 2D ferroelectric vortex pattern in twisted BaTiO 3 freestanding layers. Nature 2024; 626:529-534. [PMID: 38356067 PMCID: PMC10866709 DOI: 10.1038/s41586-023-06978-6] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/22/2022] [Accepted: 12/14/2023] [Indexed: 02/16/2024]
Abstract
The wealth of complex polar topologies1-10 recently found in nanoscale ferroelectrics results from a delicate balance between the intrinsic tendency of the materials to develop a homogeneous polarization and the electric and mechanical boundary conditions imposed on them. Ferroelectric-dielectric interfaces are model systems in which polarization curling originates from open circuit-like electric boundary conditions, to avoid the build-up of polarization charges through the formation of flux-closure11-14 domains that evolve into vortex-like structures at the nanoscale15-17 level. Although ferroelectricity is known to couple strongly with strain (both homogeneous18 and inhomogeneous19,20), the effect of mechanical constraints21 on thin-film nanoscale ferroelectrics has been comparatively less explored because of the relative paucity of strain patterns that can be implemented experimentally. Here we show that the stacking of freestanding ferroelectric perovskite layers with controlled twist angles provides an opportunity to tailor these topological nanostructures in a way determined by the lateral strain modulation associated with the twisting. Furthermore, we find that a peculiar pattern of polarization vortices and antivortices emerges from the flexoelectric coupling of polarization to strain gradients. This finding provides opportunities to create two-dimensional high-density vortex crystals that would enable us to explore previously unknown physical effects and functionalities.
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Affiliation(s)
- G Sánchez-Santolino
- GFMC, Departamento Fisica de Materiales, Facultad de Fisica, Universidad Complutense, Madrid, Spain.
- Laboratorio de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, Madrid, Spain.
| | - V Rouco
- GFMC, Departamento Fisica de Materiales, Facultad de Fisica, Universidad Complutense, Madrid, Spain.
| | - S Puebla
- Instituto de Ciencia de Materiales de Madrid ICMM-CSIC, Madrid, Spain
| | - H Aramberri
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), Esch-sur-Alzette, Luxembourg
| | - V Zamora
- GFMC, Departamento Fisica de Materiales, Facultad de Fisica, Universidad Complutense, Madrid, Spain
| | - M Cabero
- ICTS Centro Nacional de Microscopia Electrónica 'Luis Brú', Universidad Complutense, Madrid, Spain
| | - F A Cuellar
- GFMC, Departamento Fisica de Materiales, Facultad de Fisica, Universidad Complutense, Madrid, Spain
| | - C Munuera
- Laboratorio de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, Madrid, Spain
- Instituto de Ciencia de Materiales de Madrid ICMM-CSIC, Madrid, Spain
| | - F Mompean
- Laboratorio de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, Madrid, Spain
- Instituto de Ciencia de Materiales de Madrid ICMM-CSIC, Madrid, Spain
| | - M Garcia-Hernandez
- Laboratorio de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, Madrid, Spain
- Instituto de Ciencia de Materiales de Madrid ICMM-CSIC, Madrid, Spain
| | - A Castellanos-Gomez
- Laboratorio de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, Madrid, Spain
- Instituto de Ciencia de Materiales de Madrid ICMM-CSIC, Madrid, Spain
| | - J Íñiguez
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), Esch-sur-Alzette, Luxembourg
- Department of Physics and Materials Science, University of Luxembourg, Belvaux, Luxembourg
| | - C Leon
- GFMC, Departamento Fisica de Materiales, Facultad de Fisica, Universidad Complutense, Madrid, Spain
- Laboratorio de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, Madrid, Spain
| | - J Santamaria
- GFMC, Departamento Fisica de Materiales, Facultad de Fisica, Universidad Complutense, Madrid, Spain.
- Laboratorio de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, Madrid, Spain.
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14
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Guo J, He B, Han Y, Liu H, Han J, Ma X, Wang J, Gao W, Lü W. Resurrected and Tunable Conductivity and Ferromagnetism in the Secondary Growth La 0.7Ca 0.3MnO 3 on Transferred SrTiO 3 Membranes. NANO LETTERS 2024; 24:1114-1121. [PMID: 38252877 DOI: 10.1021/acs.nanolett.3c03651] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/24/2024]
Abstract
To avoid the epitaxy dilemma in various thin films, such as complex oxide, silicon, organic, metal/alloy, etc., their stacking at an atomic level and secondary growth are highly desired to maximize the functionality of a promising electronic device. The ceramic nature of complex oxides and the demand for accurate and long-range-ordered stoichiometry face severe challenges. Here, the transport and magnetic properties of the La0.7Ca0.3MnO3 (LCMO) secondary growth on single-crystal freestanding SrTiO3 (STO) membranes are demonstrated. It has been experimentally found that on an only 10 nm thick STO membrane, the LCMO can offer a bulk-like Curie temperature (TC) of 253 K and negative magnetoresistance of -64%, with a weak dependence on the thickness. The resurrected conductivity and ferromagnetism in LCMO confirm the advantages of secondary growth, which benefits from the excellent flexibility and transferability. Additionally, this study explores the integration strategy of complex oxides with other functional materials.
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Affiliation(s)
- Jinrui Guo
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan 250022, China
| | - Bin He
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan 250022, China
| | - Yue Han
- Country Functional Materials and Acousto-Optic Instruments Institute, School of Instrumentation Science and Engineering, Harbin Institute of Technology, Harbin 150080, China
| | - Huan Liu
- Country Functional Materials and Acousto-Optic Instruments Institute, School of Instrumentation Science and Engineering, Harbin Institute of Technology, Harbin 150080, China
| | - Jiale Han
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan 250022, China
| | - Xiaoqiao Ma
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan 250022, China
| | - Jiaqing Wang
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan 250022, China
| | - Wenqi Gao
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan 250022, China
| | - Weiming Lü
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan 250022, China
- Country Functional Materials and Acousto-Optic Instruments Institute, School of Instrumentation Science and Engineering, Harbin Institute of Technology, Harbin 150080, China
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15
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Zhang J, Lin T, Wang A, Wang X, He Q, Ye H, Lu J, Wang Q, Liang Z, Jin F, Chen S, Fan M, Guo EJ, Zhang Q, Gu L, Luo Z, Si L, Wu W, Wang L. Super-tetragonal Sr 4Al 2O 7 as a sacrificial layer for high-integrity freestanding oxide membranes. Science 2024; 383:388-394. [PMID: 38271502 DOI: 10.1126/science.adi6620] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/18/2023] [Accepted: 12/13/2023] [Indexed: 01/27/2024]
Abstract
Identifying a suitable water-soluble sacrificial layer is crucial to fabricating large-scale freestanding oxide membranes, which offer attractive functionalities and integrations with advanced semiconductor technologies. Here, we introduce a water-soluble sacrificial layer, "super-tetragonal" Sr4Al2O7 (SAOT). The low-symmetric crystal structure enables a superior capability to sustain epitaxial strain, allowing for broad tunability in lattice constants. The resultant structural coherency and defect-free interface in perovskite ABO3/SAOT heterostructures effectively restrain crack formation during the water release of freestanding oxide membranes. For a variety of nonferroelectric oxide membranes, the crack-free areas can span up to a millimeter in scale. This compelling feature, combined with the inherent high water solubility, makes SAOT a versatile and feasible sacrificial layer for producing high-quality freestanding oxide membranes, thereby boosting their potential for innovative device applications.
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Affiliation(s)
- Jinfeng Zhang
- Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Ting Lin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Ao Wang
- Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Xiaochao Wang
- School of Physics, Northwest University, Xi'an 710127, China
| | - Qingyu He
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
| | - Huan Ye
- Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Jingdi Lu
- Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Qing Wang
- Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Zhengguo Liang
- Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Feng Jin
- Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Shengru Chen
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Minghui Fan
- Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Er-Jia Guo
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Lin Gu
- Beijing National Center for Electron Microscopy and Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Zhenlin Luo
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
| | - Liang Si
- School of Physics, Northwest University, Xi'an 710127, China
- Institut für Festkörperphysik, TU Wien, 1040 Vienna, Austria
| | - Wenbin Wu
- Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Lingfei Wang
- Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
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16
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Gao L, Prokhorenko S, Nahas Y, Bellaiche L. Dynamical Control of Topology in Polar Skyrmions via Twisted Light. PHYSICAL REVIEW LETTERS 2024; 132:026902. [PMID: 38277608 DOI: 10.1103/physrevlett.132.026902] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/02/2023] [Revised: 09/23/2023] [Accepted: 11/08/2023] [Indexed: 01/28/2024]
Abstract
Twisted light carries a nonzero orbital angular momentum, that can be transferred from light to electrons and particles ranging from nanometers to micrometers. Up to now, the interplay between twisted light with dipolar systems has scarcely been explored, though the latter bear abundant forms of topologies such as skyrmions and embrace strong light-matter coupling. Here, using first-principles-based simulations, we show that twisted light can excite and drive dynamical polar skyrmions and transfer its nonzero winding number to ferroelectric ultrathin films. The skyrmion is successively created and annihilated alternately at the two interfaces, and experiences a periodic transition from a markedly "Bloch" to "Néel" character, accompanied with the emergence of a "Bloch point" topological defect with vanishing polarization. The dynamical evolution of skyrmions is connected to a constant jump of topological number between "0" and "1" over time. These intriguing phenomena are found to have an electrostatic origin. Our study thus demonstrates that, and explains why this unique light-matter interaction can be very powerful in creating and manipulating topological solitons in functional materials.
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Affiliation(s)
- Lingyuan Gao
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
| | - Sergei Prokhorenko
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
| | - Yousra Nahas
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
| | - Laurent Bellaiche
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
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17
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Guo M, Xu E, Huang H, Guo C, Chen H, Chen S, He S, Zhou L, Ma J, Shen Z, Xu B, Yi D, Gao P, Nan CW, Mathur ND, Shen Y. Electrically and mechanically driven rotation of polar spirals in a relaxor ferroelectric polymer. Nat Commun 2024; 15:348. [PMID: 38191601 PMCID: PMC10774403 DOI: 10.1038/s41467-023-44395-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/07/2023] [Accepted: 12/12/2023] [Indexed: 01/10/2024] Open
Abstract
Topology created by quasi-continuous spatial variations of a local polarization direction represents an exotic state of matter, but field-driven manipulation has been hitherto limited to creation and destruction. Here we report that relatively small electric or mechanical fields can drive the non-volatile rotation of polar spirals in discretized microregions of the relaxor ferroelectric polymer poly(vinylidene fluoride-ran-trifluoroethylene). These polar spirals arise from the asymmetric Coulomb interaction between vertically aligned helical polymer chains, and can be rotated in-plane through various angles with robust retention. Given also that our manipulation of topological order can be detected via infrared absorption, our work suggests a new direction for the application of complex materials.
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Affiliation(s)
- Mengfan Guo
- State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China.
- Department of Materials Science, University of Cambridge, 27 Charles Babbage Road, CB3 0FS, Cambridge, UK.
| | - Erxiang Xu
- State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Houbing Huang
- School of Materials Science and Engineering & Advanced Research Institute of Multidisciplinary Science; Beijing Institute of Technology, 100081, Beijing, China
| | - Changqing Guo
- School of Materials Science and Engineering & Advanced Research Institute of Multidisciplinary Science; Beijing Institute of Technology, 100081, Beijing, China
| | - Hetian Chen
- State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Shulin Chen
- Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, 410082, Changsha, China
| | - Shan He
- State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Le Zhou
- State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Jing Ma
- State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Zhonghui Shen
- International School of Materials Science and Engineering, Wuhan University of Technology, 430070, Wuhan, China
| | - Ben Xu
- Department of Graduate School, China Academy of Engineering Physics, 100193, Beijing, China
| | - Di Yi
- State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Peng Gao
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, 100871, Beijing, China
| | - Ce-Wen Nan
- State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Neil D Mathur
- Department of Materials Science, University of Cambridge, 27 Charles Babbage Road, CB3 0FS, Cambridge, UK.
| | - Yang Shen
- State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China.
- Center for Flexible Electronics Technology, Tsinghua University, 100084, Beijing, China.
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18
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Feng X, Cheng R, Yin L, Wen Y, Jiang J, He J. Two-Dimensional Oxide Crystals for Device Applications: Challenges and Opportunities. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2304708. [PMID: 37452605 DOI: 10.1002/adma.202304708] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/18/2023] [Revised: 07/06/2023] [Accepted: 07/12/2023] [Indexed: 07/18/2023]
Abstract
Atomically thin two-dimensional (2D) oxide crystals have garnered considerable attention because of their remarkable physical properties and potential for versatile applications. In recent years, significant advancements have been made in the design, preparation, and application of ultrathin 2D oxides, providing many opportunities for new-generation advanced technologies. This review focuses on the controllable preparation of 2D oxide crystals and their applications in electronic and optoelectronic devices. Based on their bonding nature, the various types of 2D oxide crystals are first summarized, including both layered and nonlayered crystals, as well as their current top-down and bottom-up synthetic approaches. Subsequently, in terms of the unique physical and electrical properties of 2D oxides, recent advances in device applications are emphasized, including photodetectors, field-effect transistors, dielectric layers, magnetic and ferroelectric devices, memories, and gas sensors. Finally, conclusions and future prospects of 2D oxide crystals are presented. It is hoped that this review will provide comprehensive and insightful guidance for the development of 2D oxide crystals and their device applications.
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Affiliation(s)
- Xiaoqiang Feng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, China
- Hubei Luojia Laboratory, Wuhan, 430072, China
| | - Lei Yin
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Jian Jiang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, China
- Hubei Luojia Laboratory, Wuhan, 430072, China
- Wuhan Institute of Quantum Technology, Wuhan, 430206, China
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19
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Wu Q, Wang K, Simpson A, Hao Y, Wang J, Li D, Hong X. Electrode Effect on Ferroelectricity in Free-Standing Membranes of PbZr 0.2Ti 0.8O 3. ACS NANOSCIENCE AU 2023; 3:482-490. [PMID: 38144704 PMCID: PMC10740143 DOI: 10.1021/acsnanoscienceau.3c00032] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/01/2023] [Revised: 09/30/2023] [Accepted: 10/02/2023] [Indexed: 12/26/2023]
Abstract
We report the effects of screening capacity, surface roughness, and interfacial epitaxy of the bottom electrodes on the polarization switching, domain wall (DW) roughness, and ferroelectric Curie temperature (TC) of PbZr0.2Ti0.8O3 (PZT)-based free-standing membranes. Singe crystalline 10-50 nm (001) PZT and PZT/La0.67Sr0.33MnO3 (LSMO) membranes are prepared on Au, correlated oxide LSMO, and two-dimensional (2D) semiconductor MoS2 base layers. Switching the polarization of PZT yields nonvolatile current modulation in the MoS2 channel at room temperature, with an on/off ratio of up to 2 × 105 and no apparent decay for more than 3 days. Piezoresponse force microscopy studies show that the coercive field Ec for the PZT membranes varies from 0.75 to 3.0 MV cm-1 on different base layers and exhibits strong polarization asymmetry. The PZT/LSMO membranes exhibit significantly smaller Ec, with the samples transferred on LSMO showing symmetric Ec of about -0.26/+0.28 MV cm-1, smaller than that of epitaxial PZT films. The DW roughness exponent ζ points to 2D random bond disorder dominated DW roughening (ζ = 0.31) at room temperature. Upon thermal quench at progressively higher temperatures, ζ values for PZT membranes on Au and LSMO approach the theoretical value for 1D random bond disorder (ζ = 2/3), while samples on MoS2 exhibits thermal roughening (ζ = 1/2). The PZT membranes on Au, LSMO, and MoS2 show TC of about 763 ± 12, 725 ± 25, and 588 ± 12 °C, respectively, well exceeding the bulk value. Our study reveals the complex interplay between the electrostatic and mechanical boundary conditions in determining ferroelectricity in free-standing PZT membranes, providing important material parameters for the functional design of PZT-based flexible nanoelectronics.
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Affiliation(s)
- Qiuchen Wu
- Department
of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska−Lincoln, Lincoln, Nebraska 68588-0299, United
States
| | - Kun Wang
- Department
of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska−Lincoln, Lincoln, Nebraska 68588-0299, United
States
| | - Alyssa Simpson
- Department
of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska−Lincoln, Lincoln, Nebraska 68588-0299, United
States
| | - Yifei Hao
- Department
of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska−Lincoln, Lincoln, Nebraska 68588-0299, United
States
| | - Jia Wang
- Department
of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska−Lincoln, Lincoln, Nebraska 68588-0299, United
States
| | - Dawei Li
- Department
of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska−Lincoln, Lincoln, Nebraska 68588-0299, United
States
| | - Xia Hong
- Department
of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska−Lincoln, Lincoln, Nebraska 68588-0299, United
States
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20
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Luo W, Akbarzadeh A, Nahas Y, Prokhorenko S, Bellaiche L. Quantum criticality at cryogenic melting of polar bubble lattices. Nat Commun 2023; 14:7874. [PMID: 38036499 PMCID: PMC10689468 DOI: 10.1038/s41467-023-43598-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/19/2023] [Accepted: 11/13/2023] [Indexed: 12/02/2023] Open
Abstract
Quantum fluctuations (QFs) caused by zero-point phonon vibrations (ZPPVs) are known to prevent the occurrence of polar phases in bulk incipient ferroelectrics down to 0 K. On the other hand, little is known about the effects of QFs on the recently discovered topological patterns in ferroelectric nanostructures. Here, by using an atomistic effective Hamiltonian within classical Monte Carlo (CMC) and path integral quantum Monte Carlo (PI-QMC), we unveil how QFs affect the topology of several dipolar phases in ultrathin Pb(Zr0.4Ti0.6)O3 (PZT) films. In particular, our PI-QMC simulations show that the ZPPVs do not suppress polar patterns but rather stabilize the labyrinth, bimeron and bubble phases within a wider range of bias field magnitudes. Moreover, we reveal that quantum fluctuations induce a quantum critical point (QCP) separating a hexagonal bubble lattice from a liquid-like state characterized by spontaneous motion, creation and annihilation of polar bubbles at cryogenic temperatures. Finally, we show that the discovered quantum melting is associated with anomalous physical response, as, e.g., demonstrated by a negative longitudinal piezoelectric coefficient.
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Affiliation(s)
- Wei Luo
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, 72701, USA
| | - Alireza Akbarzadeh
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, 72701, USA
- Science, Engineering, and Geosciences, Lonestar College, 9191 Barker Cypress Road, Cypress, TX, 77433, USA
| | - Yousra Nahas
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, 72701, USA
| | - Sergei Prokhorenko
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, 72701, USA.
| | - Laurent Bellaiche
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, 72701, USA.
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21
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Lun Y, Wang X, Kang J, Ren Q, Wang T, Han W, Gao Z, Huang H, Chen Y, Chen LQ, Fang D, Hong J. Ultralow Tip-Force Driven Sizable-Area Domain Manipulation through Transverse Flexoelectricity. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2302320. [PMID: 37358059 DOI: 10.1002/adma.202302320] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/13/2023] [Revised: 05/19/2023] [Indexed: 06/27/2023]
Abstract
Deterministic control of ferroelectric domain is critical in the ferroelectric functional electronics. Ferroelectric polarization can be manipulated mechanically with a nano-tip through flexoelectricity. However, it usually occurs in a very localized area in ultrathin films, with possible permanent surface damage caused by a large tip-force. Here it is demonstrated that the deliberate engineering of transverse flexoelectricity offers a powerful tool for improving the mechanical domain switching. Sizable-area domain switching under an ultralow tip-force can be realized in suspended van der Waals ferroelectrics with the surface intact, due to the enhanced transverse flexoelectric field. The film thickness range for domain switching in suspended ferroelectrics is significantly improved by an order of magnitude to hundreds of nanometers, being far beyond the limited range of the substrate-supported ones. The experimental results and phase-field simulations further reveal the crucial role of the transverse flexoelectricity in the domain manipulation. This large-scale mechanical manipulation of ferroelectric domain provides opportunities for the flexoelectricity-based domain controls in emerging low-dimensional ferroelectrics and related devices.
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Affiliation(s)
- Yingzhuo Lun
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081, China
| | - Xueyun Wang
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081, China
| | - Jiaqian Kang
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081, China
| | - Qi Ren
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081, China
| | - Tingjun Wang
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081, China
| | - Wuxiao Han
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081, China
| | - Ziyan Gao
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081, China
| | - Houbing Huang
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing, 100081, China
| | - Yabin Chen
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing, 100081, China
| | - Long-Qing Chen
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Daining Fang
- Institute of Advanced Structure Technology, Beijing Institute of Technology, Beijing, 100081, China
| | - Jiawang Hong
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081, China
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22
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Linker TM, Nomura KI, Fukushima S, Kalia RK, Krishnamoorthy A, Nakano A, Shimamura K, Shimojo F, Vashishta P. Induction and Ferroelectric Switching of Flux Closure Domains in Strained PbTiO 3 with Neural Network Quantum Molecular Dynamics. NANO LETTERS 2023; 23:7456-7462. [PMID: 37556684 DOI: 10.1021/acs.nanolett.3c01885] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/11/2023]
Abstract
We have developed an extension of the Neural Network Quantum Molecular Dynamics (NNQMD) simulation method to incorporate electric-field dynamics based on Born effective charge (BEC), called NNQMD-BEC. We first validate NNQMD-BEC for the switching mechanisms of archetypal ferroelectric PbTiO3 bulk crystal and 180° domain walls (DWs). NNQMD-BEC simulations correctly describe the nucleation-and-growth mechanism during DW switching. In triaxially strained PbTiO3 with strain conditions commonly seen in many superlattice configurations, we find that flux-closure texture can be induced with application of an electric field perpendicular to the original polarization direction. Upon field reversal, the flux-closure texture switches via a pair of transient vortices as the intermediate state, indicating an energy-efficient switching pathway. Our NNQMD-BEC method provides a theoretical guidance to study electro-mechano effects with existing machine learning force fields using a simple BEC extension, which will be relevant for engineering applications such as field-controlled switching in mechanically strained ferroelectric devices.
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Affiliation(s)
- Thomas M Linker
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, California 90089-0242, United States
- Stanford PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Ken-Ichi Nomura
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, California 90089-0242, United States
| | - Shogo Fukushima
- Department of Physics, Kumamoto University, Kumamoto 860-8555, Japan
| | - Rajiv K Kalia
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, California 90089-0242, United States
| | - Aravind Krishnamoorthy
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, California 90089-0242, United States
| | - Aiichiro Nakano
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, California 90089-0242, United States
| | - Kohei Shimamura
- Department of Physics, Kumamoto University, Kumamoto 860-8555, Japan
| | - Fuyuki Shimojo
- Department of Physics, Kumamoto University, Kumamoto 860-8555, Japan
| | - Priya Vashishta
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, California 90089-0242, United States
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23
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Zhou J, Zou Y, Li J, Huang M, Aya S. Spontaneous periodic polarization wave in helielectric fluids. PNAS NEXUS 2023; 2:pgad265. [PMID: 37614674 PMCID: PMC10443924 DOI: 10.1093/pnasnexus/pgad265] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/25/2023] [Accepted: 07/31/2023] [Indexed: 08/25/2023]
Abstract
By analogy with spin waves in ferromagnetic systems, the polarization (or dipole) wave is the electric counterpart that remains elusive. Here, we discover that the helielectricity, i.e. a polarization field with helicoidal helices that corresponds to a quasi-layered chiral nematic environment, causes a spontaneous formation of large-scale polarization waves in the form of the sinusoidal function. Both experimental and theoretical analyses reveal that the polarization ordering over a threshold polarization strength violates the inherent periodicity of the polarization helices, thus penalizing the compression energy. It drives a second-order structural transition to a periodically modulated polarization wave state. The roles of chirality and confinement condition are discussed.
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Affiliation(s)
- Junchen Zhou
- Advanced Institute for Soft Matter Science and Technology (AISMST), School of Emergent Soft Matter, South China University of Technology, Guangzhou 510640, China
| | - Yu Zou
- Advanced Institute for Soft Matter Science and Technology (AISMST), School of Emergent Soft Matter, South China University of Technology, Guangzhou 510640, China
| | - Jinxing Li
- Advanced Institute for Soft Matter Science and Technology (AISMST), School of Emergent Soft Matter, South China University of Technology, Guangzhou 510640, China
| | - Mingjun Huang
- Advanced Institute for Soft Matter Science and Technology (AISMST), School of Emergent Soft Matter, South China University of Technology, Guangzhou 510640, China
- Guangdong Provincial Key Laboratory of Functional and Intelligent Hybrid Materials and Devices, South China University of Technology, Guangzhou 510640, China
| | - Satoshi Aya
- Advanced Institute for Soft Matter Science and Technology (AISMST), School of Emergent Soft Matter, South China University of Technology, Guangzhou 510640, China
- Guangdong Provincial Key Laboratory of Functional and Intelligent Hybrid Materials and Devices, South China University of Technology, Guangzhou 510640, China
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24
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Aoki T, Sawada H, Du C, Pan X. Quickly Switchable Angular and Spatially Resolved Cs-corrected STEM. MICROSCOPY AND MICROANALYSIS : THE OFFICIAL JOURNAL OF MICROSCOPY SOCIETY OF AMERICA, MICROBEAM ANALYSIS SOCIETY, MICROSCOPICAL SOCIETY OF CANADA 2023; 29:348-349. [PMID: 37613505 DOI: 10.1093/micmic/ozad067.162] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/25/2023]
Affiliation(s)
- Toshihiro Aoki
- Irvine Materials Research Institute (IMRI), University of California, Irvine, CA, United States
| | | | - Chaojie Du
- Department of Materials Science and Engineering, University of California, Irvine, CA, United States
| | - Xiaoqing Pan
- Irvine Materials Research Institute (IMRI), University of California, Irvine, CA, United States
- Department of Materials Science and Engineering, University of California, Irvine, CA, United States
- Department of Physics and Astronomy, University of California, Irvine, CA, United States
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25
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Govinden V, Tong P, Guo X, Zhang Q, Mantri S, Seyfouri MM, Prokhorenko S, Nahas Y, Wu Y, Bellaiche L, Sun T, Tian H, Hong Z, Valanoor N, Sando D. Ferroelectric solitons crafted in epitaxial bismuth ferrite superlattices. Nat Commun 2023; 14:4178. [PMID: 37443322 DOI: 10.1038/s41467-023-39841-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/16/2022] [Accepted: 06/29/2023] [Indexed: 07/15/2023] Open
Abstract
In ferroelectrics, complex interactions among various degrees of freedom enable the condensation of topologically protected polarization textures. Known as ferroelectric solitons, these particle-like structures represent a new class of materials with promise for beyond-CMOS technologies due to their ultrafine size and sensitivity to external stimuli. Such polarization textures have scarcely been demonstrated in multiferroics. Here, we present evidence for ferroelectric solitons in (BiFeO3)/(SrTiO3) superlattices. High-resolution piezoresponse force microscopy and Cs-corrected high-angle annular dark-field scanning transmission electron microscopy reveal a zoo of topologies, and polarization displacement mapping of planar specimens reveals center-convergent/divergent topological defects as small as 3 nm. Phase-field simulations verify that some of these structures can be classed as bimerons with a topological charge of ±1, and first-principles-based effective Hamiltonian computations show that the coexistence of such structures can lead to non-integer topological charges, a first observation in a BiFeO3-based system. Our results open new opportunities in multiferroic topotronics.
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Affiliation(s)
- Vivasha Govinden
- School of Materials Science and Engineering, University of New South Wales Sydney, Kensington, NSW, Australia
| | - Peiran Tong
- Center of Electron Microscopy, School of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang, China
| | - Xiangwei Guo
- School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, China
- Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, Hangzhou Innovation Center, Zhejiang University, Hangzhou, Zhejiang, China
- Cyrus Tang Center for Sensor Materials and Applications, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang, China
| | - Qi Zhang
- School of Materials Science and Engineering, University of New South Wales Sydney, Kensington, NSW, Australia
| | - Sukriti Mantri
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, USA
| | - Mohammad Moein Seyfouri
- School of Materials Science and Engineering, University of New South Wales Sydney, Kensington, NSW, Australia
- Solid State and Elemental Analysis Unit, Mark Wainwright Analytical Center, University of New South Wales, Sydney, NSW, Australia
| | - Sergei Prokhorenko
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, USA
| | - Yousra Nahas
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, USA
| | - Yongjun Wu
- School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, China
- Cyrus Tang Center for Sensor Materials and Applications, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang, China
| | - Laurent Bellaiche
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, USA
| | - Tulai Sun
- Center of Electron Microscopy, School of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang, China
- Center for Electron Microscopy, State Key Laboratory Breeding Base of Green Chemistry Synthesis Technology and College of Chemical Engineering, Zhejiang University of Technology, Hangzhou, Zhejiang, China
| | - He Tian
- Center of Electron Microscopy, School of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang, China.
- School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, Henan, China.
| | - Zijian Hong
- School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, China.
- Cyrus Tang Center for Sensor Materials and Applications, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, Zhejiang, China.
| | - Nagarajan Valanoor
- School of Materials Science and Engineering, University of New South Wales Sydney, Kensington, NSW, Australia.
| | - Daniel Sando
- School of Materials Science and Engineering, University of New South Wales Sydney, Kensington, NSW, Australia.
- School of Physical and Chemical Sciences, University of Canterbury, Christchurch, New Zealand.
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26
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Wang J, Liang D, Ma J, Fan Y, Ma J, Jafri HM, Yang H, Zhang Q, Wang Y, Guo C, Dong S, Liu D, Wang X, Hong J, Zhang N, Gu L, Yi D, Zhang J, Lin Y, Chen LQ, Huang H, Nan CW. Polar Solomon rings in ferroelectric nanocrystals. Nat Commun 2023; 14:3941. [PMID: 37402744 DOI: 10.1038/s41467-023-39668-y] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/19/2022] [Accepted: 06/22/2023] [Indexed: 07/06/2023] Open
Abstract
Solomon rings, upholding the symbol of wisdom with profound historical roots, were widely used as decorations in ancient architecture and clothing. However, it was only recently discovered that such topological structures can be formed by self-organization in biological/chemical molecules, liquid crystals, etc. Here, we report the observation of polar Solomon rings in a ferroelectric nanocrystal, which consist of two intertwined vortices and are mathematically equivalent to a [Formula: see text] link in topology. By combining piezoresponse force microscopy observations and phase-field simulations, we demonstrate the reversible switching between polar Solomon rings and vertex textures by an electric field. The two types of topological polar textures exhibit distinct absorption of terahertz infrared waves, which can be exploited in infrared displays with a nanoscale resolution. Our study establishes, both experimentally and computationally, the existence and electrical manipulation of polar Solomon rings, a new form of topological polar structures that may provide a simple way for fast, robust, and high-resolution optoelectronic devices.
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Affiliation(s)
- Jing Wang
- Advanced Research Institute of Multidisciplinary Science, and School of Materials Science and Engineering, Beijing Institute of Technology, 100081, Beijing, China
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Deshan Liang
- Advanced Research Institute of Multidisciplinary Science, and School of Materials Science and Engineering, Beijing Institute of Technology, 100081, Beijing, China
| | - Jing Ma
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Yuanyuan Fan
- Advanced Research Institute of Multidisciplinary Science, and School of Materials Science and Engineering, Beijing Institute of Technology, 100081, Beijing, China
| | - Ji Ma
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
- School of Material Science and Engineering, Kunming University of Science and Technology, 650093, Kunming, Yunnan, China
| | - Hasnain Mehdi Jafri
- Advanced Research Institute of Multidisciplinary Science, and School of Materials Science and Engineering, Beijing Institute of Technology, 100081, Beijing, China
| | - Huayu Yang
- Advanced Research Institute of Multidisciplinary Science, and School of Materials Science and Engineering, Beijing Institute of Technology, 100081, Beijing, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Science, 100190, Beijing, China
| | - Yue Wang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Changqing Guo
- Advanced Research Institute of Multidisciplinary Science, and School of Materials Science and Engineering, Beijing Institute of Technology, 100081, Beijing, China
| | - Shouzhe Dong
- Advanced Research Institute of Multidisciplinary Science, and School of Materials Science and Engineering, Beijing Institute of Technology, 100081, Beijing, China
| | - Di Liu
- Advanced Research Institute of Multidisciplinary Science, and School of Materials Science and Engineering, Beijing Institute of Technology, 100081, Beijing, China
| | - Xueyun Wang
- School of Aerospace Engineering, Beijing Institute of Technology, 100081, Beijing, China
| | - Jiawang Hong
- School of Aerospace Engineering, Beijing Institute of Technology, 100081, Beijing, China
| | - Nan Zhang
- Beijing Engineering Research Center of Mixed Reality and Advanced Display, and School of Optics and Photonics, Beijing Institute of Technology, 100081, Beijing, China
| | - Lin Gu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Science, 100190, Beijing, China
| | - Di Yi
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Jinxing Zhang
- Department of Physics, and Key Laboratory of Multi-scale Spin Physics, Ministry of Education, Beijing Normal University, 100875, Beijing, China
| | - Yuanhua Lin
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Long-Qing Chen
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA, 16802, USA
| | - Houbing Huang
- Advanced Research Institute of Multidisciplinary Science, and School of Materials Science and Engineering, Beijing Institute of Technology, 100081, Beijing, China.
| | - Ce-Wen Nan
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China.
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27
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Gong FH, Tang YL, Wang YJ, Chen YT, Wu B, Yang LX, Zhu YL, Ma XL. Absence of critical thickness for polar skyrmions with breaking the Kittel's law. Nat Commun 2023; 14:3376. [PMID: 37291226 PMCID: PMC10250330 DOI: 10.1038/s41467-023-39169-y] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/21/2022] [Accepted: 05/31/2023] [Indexed: 06/10/2023] Open
Abstract
The period of polar domain (d) in ferroics was commonly believed to scale with corresponding film thicknesses (h), following the classical Kittel's law of d ∝ [Formula: see text]. Here, we have not only observed that this relationship fails in the case of polar skyrmions, where the period shrinks nearly to a constant value, or even experiences a slight increase, but also discovered that skyrmions have further persisted in [(PbTiO3)2/(SrTiO3)2]10 ultrathin superlattices. Both experimental and theoretical results indicate that the skyrmion periods (d) and PbTiO3 layer thicknesses in superlattice (h) obey the hyperbolic function of d = Ah + [Formula: see text] other than previous believed, simple square root law. Phase-field analysis indicates that the relationship originates from the different energy competitions of the superlattices with PbTiO3 layer thicknesses. This work exemplified the critical size problems faced by nanoscale ferroelectric device designing in the post-Moore era.
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Affiliation(s)
- Feng-Hui Gong
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Wenhua Road 72, Shenyang, 110016, China
| | - Yun-Long Tang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China
| | - Yu-Jia Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China
| | - Yu-Ting Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Wenhua Road 72, Shenyang, 110016, China
| | - Bo Wu
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, China
| | - Li-Xin Yang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China
| | - Yin-Lian Zhu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China.
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, China.
| | - Xiu-Liang Ma
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China.
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, China.
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
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28
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Yuan S, Chen Z, Prokhorenko S, Nahas Y, Bellaiche L, Liu C, Xu B, Chen L, Das S, Martin LW. Hexagonal Close-Packed Polar-Skyrmion Lattice in Ultrathin Ferroelectric PbTiO_{3} Films. PHYSICAL REVIEW LETTERS 2023; 130:226801. [PMID: 37327425 DOI: 10.1103/physrevlett.130.226801] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/31/2022] [Revised: 02/24/2023] [Accepted: 05/05/2023] [Indexed: 06/18/2023]
Abstract
Polar skyrmions are topologically stable, swirling polarization textures with particlelike characteristics, which hold promise for next-generation, nanoscale logic and memory. However, the understanding of how to create ordered polar skyrmion lattice structures and how such structures respond to applied electric fields, temperature, and film thickness remains elusive. Here, using phase-field simulations, the evolution of polar topology and the emergence of a phase transition to a hexagonal close-packed skyrmion lattice is explored through the construction of a temperature-electric field phase diagram for ultrathin ferroelectric PbTiO_{3} films. The hexagonal-lattice skyrmion crystal can be stabilized under application of an external, out-of-plane electric field which carefully adjusts the delicate interplay of elastic, electrostatic, and gradient energies. In addition, the lattice constants of the polar skyrmion crystals are found to increase with film thickness, consistent with expectation from Kittel's law. Our studies pave the way for the development of novel ordered condensed matter phases assembled from topological polar textures and related emergent properties in nanoscale ferroelectrics.
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Affiliation(s)
- Shuai Yuan
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen 518055, China and Flexible Printed Electronics Technology Center, Harbin Institute of Technology, Shenzhen 518055, China
| | - Zuhuang Chen
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen 518055, China and Flexible Printed Electronics Technology Center, Harbin Institute of Technology, Shenzhen 518055, China
| | - Sergei Prokhorenko
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
| | - Yousra Nahas
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
| | - Laurent Bellaiche
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
| | - Chenhan Liu
- Micro- and Nano-scale Thermal Measurement and Thermal Management Laboratory, School of Energy and Mechanical Engineering, Nanjing Normal University, Nanjing, 210046, People's Republic of China
| | - Bin Xu
- Institute of Theoretical and Applied Physics and School of Physical Science and Technology, Soochow University, Suzhou, Jiangsu 215006, China
| | - Lang Chen
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Sujit Das
- Materials Research Centre, Indian Institute of Science, Bangalore, 560012, India
| | - Lane W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
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29
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Govinden V, Prokhorenko S, Zhang Q, Rijal S, Nahas Y, Bellaiche L, Valanoor N. Spherical ferroelectric solitons. NATURE MATERIALS 2023; 22:553-561. [PMID: 37138009 DOI: 10.1038/s41563-023-01527-y] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/14/2022] [Accepted: 03/09/2023] [Indexed: 05/05/2023]
Abstract
Spherical ferroelectric domains, such as electrical bubbles, polar skyrmion bubbles and hopfions, share a single and unique feature-their homogeneously polarized cores are surrounded by a vortex ring of polarization whose outer shells form a spherical domain boundary. The resulting polar texture, typical of three-dimensional topological solitons, has an entirely new local symmetry characterized by a high polarization and strain gradients. Consequently, spherical domains represent a different material system of their own with emergent properties drastically different from that of their surrounding medium. Examples of new functionalities inherent to spherical domains include chirality, optical response, negative capacitance and giant electromechanical response. These characteristics, particularly given that the domains naturally have an ultrafine scale, offer new opportunities in high-density and low-energy nanoelectronic technologies. This Perspective gives an insight into the complex polar structure and physical origin of these spherical domains, which facilitates the understanding and development of spherical domains for device applications.
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Affiliation(s)
- Vivasha Govinden
- School of Materials Science and Engineering, University of New South Wales, Sydney, New South Wales, Australia
| | - Sergei Prokhorenko
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, USA
| | - Qi Zhang
- School of Materials Science and Engineering, University of New South Wales, Sydney, New South Wales, Australia.
| | - Suyash Rijal
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, USA
| | - Yousra Nahas
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, USA
| | - Laurent Bellaiche
- Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, USA
| | - Nagarajan Valanoor
- School of Materials Science and Engineering, University of New South Wales, Sydney, New South Wales, Australia.
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30
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Han L, Yang X, Lun Y, Guan Y, Huang F, Wang S, Yang J, Gu C, Gu ZB, Liu L, Wang Y, Wang P, Hong J, Pan X, Nie Y. Tuning Piezoelectricity via Thermal Annealing at a Freestanding Ferroelectric Membrane. NANO LETTERS 2023; 23:2808-2815. [PMID: 36961344 DOI: 10.1021/acs.nanolett.3c00096] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Tuning the ferroelectric domain structure by a combination of elastic and electrostatic engineering provides an effective route for enhanced piezoelectricity. However, for epitaxial thin films, the clamping effect imposed by the substrate does not allow aftergrowth tuning and also limits the electromechanical response. In contrast, freestanding membranes, which are free of substrate constraints, enable the tuning of a subtle balance between elastic and electrostatic energies, giving new platforms for enhanced and tunable functionalities. Here, highly tunable piezoelectricity is demonstrated in freestanding PbTiO3 membranes, by varying the ferroelectric domain structures from c-dominated to c/a and a domains via aftergrowth thermal treatment. Significantly, the piezoelectric coefficient of the c/a domain structure is enhanced by a factor of 2.5 compared with typical c domain PbTiO3. This work presents a new strategy to manipulate the piezoelectricity in ferroelectric membranes, highlighting their great potential for nano actuators, transducers, sensors and other NEMS device applications.
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Affiliation(s)
- Lu Han
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
| | - Xinrui Yang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
| | - Yingzhuo Lun
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Yue Guan
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
| | - Futao Huang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
| | - Shuhao Wang
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, Jiangsu, People's Republic of China
| | - Jiangfeng Yang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
| | - Chenyi Gu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
| | - Zheng-Bin Gu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
| | - Lisha Liu
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, Jiangsu, People's Republic of China
| | - Yaojin Wang
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, Jiangsu, People's Republic of China
| | - Peng Wang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
- Department of Physics, University of Warwick, Coventry CV4 7AL, U.K
| | - Jiawang Hong
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Xiaoqing Pan
- Department of Physics and Astronomy, University of California, Irvine, California 92697, United States
- Department of Materials Science and Engineering, University of California, Irvine, California 92697, United States
- Irvine Materials Research Institute, University of California, Irvine, California 92697, United States
| | - Yuefeng Nie
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
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31
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Zhang P, He B, Guo J, Wang Q, Han Y, Shi C, Chen Y, Fang H, Wang J, Yan S, Lü W. Extreme Enhanced Curie Temperature and Perpendicular Exchange Bias in Freestanding Ferromagnetic Superlattices. ACS APPLIED MATERIALS & INTERFACES 2023; 15:17309-17316. [PMID: 36949634 DOI: 10.1021/acsami.2c22715] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Most recently, the freestanding of an epitaxial single-crystal oxide has been greatly developed to its fundamental concerns and the possibility of integration with metal, two-dimensional, and organic materials for more promising functionalities. In an artificial ferromagnetic oxide heterostructure and superlattice, the release of the substrate constraint can induce a reasonable transformation of the magnetic structure because the change of the lattice field occurs. In this study, we have comprehensively investigated the evolution of magnetic properties of (La0.7Ca0.3MnO3/SrRuO3)n [(LCMO/SRO)n] ferromagnetic superlattices while they are epitaxially on SrTiO3 and freestanding. It is found that the Curie temperature and the perpendicular exchange bias of the freestanding superlattices exhibit extreme sensitivity to the interface number and the thickness of LCMO and SRO, which can maximumly reach ∼293 K and ∼1150 Oe. These enhanced and bulk-beyond magnetic behaviors originate from the interfacial magnetic transition from ferromagnetic to antiferromagnetic via the charge reconstruction with the assistance of strain. Our study provides not only a reference for designing a high-performance flexible ferromagnetic architectural superlattice but also a deep understanding of the interfacial effect in freestanding ferromagnetic heterostructures benefiting flexible spintronics.
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Affiliation(s)
- Peng Zhang
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan, Shandong 250022, People's Republic of China
| | - Bin He
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan, Shandong 250022, People's Republic of China
| | - Jinrui Guo
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan, Shandong 250022, People's Republic of China
| | - Qixiang Wang
- Functional Materials and Acousto-Optic Instruments Institute, School of Instrumentation Science and Engineering, Harbin Institute of Technology, Harbin, Heilongjiang 150080, People's Republic of China
| | - Yue Han
- Functional Materials and Acousto-Optic Instruments Institute, School of Instrumentation Science and Engineering, Harbin Institute of Technology, Harbin, Heilongjiang 150080, People's Republic of China
| | - Chaoqun Shi
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan, Shandong 250022, People's Republic of China
| | - Yanan Chen
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan, Shandong 250022, People's Republic of China
| | - Hong Fang
- Functional Materials and Acousto-Optic Instruments Institute, School of Instrumentation Science and Engineering, Harbin Institute of Technology, Harbin, Heilongjiang 150080, People's Republic of China
| | - Jie Wang
- Functional Materials and Acousto-Optic Instruments Institute, School of Instrumentation Science and Engineering, Harbin Institute of Technology, Harbin, Heilongjiang 150080, People's Republic of China
| | - Shishen Yan
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan, Shandong 250022, People's Republic of China
| | - Weiming Lü
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan, Shandong 250022, People's Republic of China
- Functional Materials and Acousto-Optic Instruments Institute, School of Instrumentation Science and Engineering, Harbin Institute of Technology, Harbin, Heilongjiang 150080, People's Republic of China
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32
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Bennett D, Chaudhary G, Slager RJ, Bousquet E, Ghosez P. Polar meron-antimeron networks in strained and twisted bilayers. Nat Commun 2023; 14:1629. [PMID: 36959197 PMCID: PMC10036565 DOI: 10.1038/s41467-023-37337-8] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Grants] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/21/2022] [Accepted: 03/13/2023] [Indexed: 03/25/2023] Open
Abstract
Out-of-plane polar domain structures have recently been discovered in strained and twisted bilayers of inversion symmetry broken systems such as hexagonal boron nitride. Here we show that this symmetry breaking also gives rise to an in-plane component of polarization, and the form of the total polarization is determined purely from symmetry considerations. The in-plane component of the polarization makes the polar domains in strained and twisted bilayers topologically non-trivial, forming a network of merons and antimerons (half-skyrmions and half-antiskyrmions). For twisted systems, the merons are of Bloch type whereas for strained systems they are of Néel type. We propose that the polar domains in strained or twisted bilayers may serve as a platform for exploring topological physics in layered materials and discuss how control over topological phases and phase transitions may be achieved in such systems.
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Affiliation(s)
- Daniel Bennett
- Physique Théorique des Matériaux, QMAT, CESAM, University of Liège, B-4000, Sart-Tilman, Belgium.
- Theory of Condensed Matter Group, Cavendish Laboratory, University of Cambridge, J. J. Thomson Avenue, Cambridge, CB3 0HE, UK.
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, 02138, USA.
| | - Gaurav Chaudhary
- Theory of Condensed Matter Group, Cavendish Laboratory, University of Cambridge, J. J. Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Robert-Jan Slager
- Theory of Condensed Matter Group, Cavendish Laboratory, University of Cambridge, J. J. Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Eric Bousquet
- Physique Théorique des Matériaux, QMAT, CESAM, University of Liège, B-4000, Sart-Tilman, Belgium
| | - Philippe Ghosez
- Physique Théorique des Matériaux, QMAT, CESAM, University of Liège, B-4000, Sart-Tilman, Belgium
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33
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Kumar M, Han SI, Ahn Y, Jeon Y, Park J, Seo H. Switchable Polar Nanotexture in Nanolaminates HfO 2 -ZrO 2 for Ultrafast Logic-in-Memory Operations. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023:e2206736. [PMID: 36929621 DOI: 10.1002/smll.202206736] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/01/2022] [Revised: 02/22/2023] [Indexed: 06/18/2023]
Abstract
Nontrivial topological polar textures in ferroelectric materials, including vortices, skyrmions, and others, have the potential to develop ultrafast, high-density, reliable multilevel memory storage and conceptually innovative processing units, even beyond the limit of binary storage of 180° aligned polar materials. However, the realization of switchable polar textures at room temperature in ferroelectric materials integrated directly into silicon using a straightforward large area fabrication technique and effectively utilizing it to design multilevel programable memory and processing units has not yet been demonstrated. Here, utilizing vector piezoresponse force and conductive atomic force microscopy, microscopic evidence of the electric field switchable polar nanotexture is provided at room temperature in HfO2 -ZrO2 nanolaminates grown directly onto silicon using an atomic layer deposition technique. Additionally, a two-terminal Au/nanolaminates/Si ferroelectric tunnel junction is designed, which shows ultrafast (≈83 ns) nonvolatile multilevel current switching with high on/off ratio (>106 ), long-term durability (>4000 s), and giant tunnel electroresistance (108 %). Furthermore, 14 Boolean logic operations are tested utilizing a single device as a proof-of-concept for reconfigurable logic-in-memory processing. The results offer a potential approach to "processing with polar textures" and addressing the challenges of developing high-performance multilevel in-memory processing technology by virtue of its fundamentally distinct mechanism of operation.
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Affiliation(s)
- Mohit Kumar
- Department of Energy Systems Research, Ajou University, Suwon, 16499, Republic of Korea
- Department of Materials Science and Engineering, Ajou University, Suwon, 16499, Republic of Korea
| | - Seung-Ik Han
- Department of Energy Systems Research, Ajou University, Suwon, 16499, Republic of Korea
| | - Yeonghwan Ahn
- Department of Energy Systems Research, Ajou University, Suwon, 16499, Republic of Korea
| | - Yerin Jeon
- Department of Energy Systems Research, Ajou University, Suwon, 16499, Republic of Korea
| | - Jiyeong Park
- Department of Energy Systems Research, Ajou University, Suwon, 16499, Republic of Korea
| | - Hyungtak Seo
- Department of Energy Systems Research, Ajou University, Suwon, 16499, Republic of Korea
- Department of Materials Science and Engineering, Ajou University, Suwon, 16499, Republic of Korea
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Linker T, Nomura KI, Fukushima S, Kalia RK, Krishnamoorthy A, Nakano A, Shimamura K, Shimojo F, Vashishta P. Squishing Skyrmions: Symmetry-Guided Dynamic Transformation of Polar Topologies Under Compression. J Phys Chem Lett 2022; 13:11335-11345. [PMID: 36454058 DOI: 10.1021/acs.jpclett.2c03029] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Mechanical controllability of recently discovered topological defects (e.g., skyrmions) in ferroelectric materials is of interest for the development of ultralow-power mechano-electronics that are protected against thermal noise. However, fundamental understanding is hindered by the "multiscale quantum challenge" to describe topological switching encompassing large spatiotemporal scales with quantum mechanical accuracy. Here, we overcome this challenge by developing a machine-learning-based multiscale simulation framework─a hybrid neural network quantum molecular dynamics (NNQMD) and molecular mechanics (MM) method. For nanostructures composed of SrTiO3 and PbTiO3, we find how the symmetry of mechanical loading essentially controls polar topological switching. We find under symmetry-breaking uniaxial compression a squishing-to-annihilation pathway versus formation of a topological composite named skyrmionium under symmetry-preserving isotropic compression. The distinct pathways are explained in terms of the underlying materials' elasticity and symmetry, as well as the Landau-Lifshitz-Kittel scaling law. Such rational control of ferroelectric topologies will likely facilitate exploration of the rich ferroelectric "topotronics" design space.
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Affiliation(s)
- Thomas Linker
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, California90089-0242, United States of America
| | - Ken-Ichi Nomura
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, California90089-0242, United States of America
| | - Shogo Fukushima
- Department of Physics, Kumamoto University, Kumamoto860-8555, Japan
| | - Rajiv K Kalia
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, California90089-0242, United States of America
| | - Aravind Krishnamoorthy
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, California90089-0242, United States of America
| | - Aiichiro Nakano
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, California90089-0242, United States of America
| | - Kohei Shimamura
- Department of Physics, Kumamoto University, Kumamoto860-8555, Japan
| | - Fuyuki Shimojo
- Department of Physics, Kumamoto University, Kumamoto860-8555, Japan
| | - Priya Vashishta
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, California90089-0242, United States of America
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Nian L, Li J, Wang Z, Zhang T, Sun H, Li Y, Gao T, Deng Y, Nie Y, Hao Y. Synthesis of Oxide Interface-Based Two-Dimensional Electron Gas on Si. ACS APPLIED MATERIALS & INTERFACES 2022; 14:53442-53449. [PMID: 36383755 DOI: 10.1021/acsami.2c18934] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Two-dimensional electron gas (2DEG) at the interface of amorphous Al2O3/SrTiO3 (aAO/STO) heterostructures has received considerable attention owing to its convenience of fabrication and relatively high mobility. The integration of these 2DEG heterostructures on a silicon wafer is highly desired for electronic applications but remains challanging up to date. Here, conductive aAO/STO heterostructures have been synthesized on a silicon wafer via a growth-and-transfer method. A scanning transmission electron microscopy image shows flat and close contact between STO membranes and a Si wafer. Electron energy loss spectroscopic measurements reveal the interfacial Ti valence state evolution, which identifies the formation of 2D charge carriers confined at the interface of aAO/STO. This work provides a feasible strategy for the integration of 2DEG on a silicon wafer and other desired substrates for potential functional and flexible electronic devices.
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Affiliation(s)
- Leyan Nian
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing, Jiangsu 210023, People's Republic of China
| | - Jiayi Li
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing, Jiangsu 210023, People's Republic of China
| | - Zhichao Wang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing, Jiangsu 210023, People's Republic of China
| | - Tingting Zhang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing, Jiangsu 210023, People's Republic of China
| | - Haoying Sun
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing, Jiangsu 210023, People's Republic of China
| | - Yueying Li
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing, Jiangsu 210023, People's Republic of China
| | - Tianyi Gao
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing, Jiangsu 210023, People's Republic of China
| | - Yu Deng
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing, Jiangsu 210023, People's Republic of China
| | - Yuefeng Nie
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing, Jiangsu 210023, People's Republic of China
| | - Yufeng Hao
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing, Jiangsu 210023, People's Republic of China
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36
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Shen J, Dong Z, Qi M, Zhang Y, Zhu C, Wu Z, Li D. Observation of Moiré Patterns in Twisted Stacks of Bilayer Perovskite Oxide Nanomembranes with Various Lattice Symmetries. ACS APPLIED MATERIALS & INTERFACES 2022; 14:50386-50392. [PMID: 36287237 DOI: 10.1021/acsami.2c14746] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
The design and fabrication of novel quantum devices in which exotic phenomena arise from moiré physics have sparked a new race of conceptualization and creation of artificial lattice structures. This interest is further extended to the research on thin-film transition metal oxides, with the goal of synthesizing twisted layers of perovskite oxides concurrently revealing moiré landscapes. By utilizing a sacrificial-layer-based approach, we show that such high-quality twisted bilayer oxide nanomembrane structures can be achieved. We observe atomic-scale distinct moiré patterns directly formed with different twist angles, and the symmetry-inequivalent nanomembranes can be stacked together to constitute new complex moiré configurations. This study paves the way to the construction of higher-order artificial oxide heterostructures based on different materials/symmetries and provides the materials foundation for investigating moiré-related electronic effects in an expanded selection of twisted oxide thin films.
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Affiliation(s)
- Jiaying Shen
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing100876, P. R. China
| | - Zhengang Dong
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing100876, P. R. China
- Department of Physics, City University of Hong Kong, Kowloon, Hong Kong999077, China
| | - MingQun Qi
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing100876, P. R. China
| | - Yang Zhang
- Institute of Modern Optics & Tianjin Key Laboratory of Micro-Scale Optical Information Science and Technology, Nankai University, Tianjin300071, P. R. China
| | - Chao Zhu
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Southeast University, Nanjing210096, China
| | - Zhenping Wu
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing100876, P. R. China
| | - Danfeng Li
- Department of Physics, City University of Hong Kong, Kowloon, Hong Kong999077, China
- Hong Kong Institute for Advanced Study, City University of Hong Kong, Kowloon, Hong Kong SAR999077, China
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37
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Cai S, Lun Y, Ji D, Lv P, Han L, Guo C, Zang Y, Gao S, Wei Y, Gu M, Zhang C, Gu Z, Wang X, Addiego C, Fang D, Nie Y, Hong J, Wang P, Pan X. Enhanced polarization and abnormal flexural deformation in bent freestanding perovskite oxides. Nat Commun 2022; 13:5116. [PMID: 36045121 PMCID: PMC9433432 DOI: 10.1038/s41467-022-32519-2] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/16/2022] [Accepted: 08/03/2022] [Indexed: 11/09/2022] Open
Abstract
Recent realizations of ultrathin freestanding perovskite oxides offer a unique platform to probe novel properties in two-dimensional oxides. Here, we observe a giant flexoelectric response in freestanding BiFeO3 and SrTiO3 in their bent state arising from strain gradients up to 3.5 × 107 m-1, suggesting a promising approach for realizing ultra-large polarizations. Additionally, a substantial change in membrane thickness is discovered in bent freestanding BiFeO3, which implies an unusual bending-expansion/shrinkage effect in the ferroelectric membrane that has never been seen before in crystalline materials. Our theoretical model reveals that this unprecedented flexural deformation within the membrane is attributable to a flexoelectricity-piezoelectricity interplay. The finding unveils intriguing nanoscale electromechanical properties and provides guidance for their practical applications in flexible nanoelectromechanical systems.
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Affiliation(s)
- Songhua Cai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, 999077, Hong Kong.
| | - Yingzhuo Lun
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081, China
| | - Dianxiang Ji
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, 999077, Hong Kong
| | - Peng Lv
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081, China
| | - Lu Han
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Changqing Guo
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081, China
| | - Yipeng Zang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Si Gao
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Yifan Wei
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Min Gu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Chunchen Zhang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Zhengbin Gu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Xueyun Wang
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081, China
| | - Christopher Addiego
- Department of Physics and Astronomy, University of California, Irvine, CA, 92697, USA
| | - Daining Fang
- Institute of Advanced Structure Technology, Beijing Institute of Technology, Beijing, 100081, China.,State Key Laboratory for Turbulence and Complex Systems & Center for Applied Physics and Technology, College of Engineering, Peking University, Beijing, 100871, China
| | - Yuefeng Nie
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
| | - Jiawang Hong
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081, China.
| | - Peng Wang
- Department of Physics, University of Warwick, Coventry, CV4 7AL, UK.
| | - Xiaoqing Pan
- Department of Physics and Astronomy, University of California, Irvine, CA, 92697, USA. .,Department of Materials Science and Engineering, University of California, Irvine, CA, 92697, USA. .,Irvine Materials Research Institute, University of California, Irvine, CA, 92697, USA.
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Pesquera D, Fernández A, Khestanova E, Martin LW. Freestanding complex-oxide membranes. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:383001. [PMID: 35779514 DOI: 10.1088/1361-648x/ac7dd5] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/22/2022] [Accepted: 07/01/2022] [Indexed: 06/15/2023]
Abstract
Complex oxides show a vast range of functional responses, unparalleled within the inorganic solids realm, making them promising materials for applications as varied as next-generation field-effect transistors, spintronic devices, electro-optic modulators, pyroelectric detectors, or oxygen reduction catalysts. Their stability in ambient conditions, chemical versatility, and large susceptibility to minute structural and electronic modifications make them ideal subjects of study to discover emergent phenomena and to generate novel functionalities for next-generation devices. Recent advances in the synthesis of single-crystal, freestanding complex oxide membranes provide an unprecedented opportunity to study these materials in a nearly-ideal system (e.g. free of mechanical/thermal interaction with substrates) as well as expanding the range of tools for tweaking their order parameters (i.e. (anti-)ferromagnetic, (anti-)ferroelectric, ferroelastic), and increasing the possibility of achieving novel heterointegration approaches (including interfacing dissimilar materials) by avoiding the chemical, structural, or thermal constraints in synthesis processes. Here, we review the recent developments in the fabrication and characterization of complex-oxide membranes and discuss their potential for unraveling novel physicochemical phenomena at the nanoscale and for further exploiting their functionalities in technologically relevant devices.
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Affiliation(s)
- David Pesquera
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST Campus UAB, Bellaterra, Barcelona 08193, Spain
| | - Abel Fernández
- Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, United States of America
| | | | - Lane W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, United States of America
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, United States of America
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