Enhancing formation rate of highly-oriented silicon nanowire arrays with the assistance of back substrates

Fabrication of Metal Contacts on Silicon Nanopillars: The Role of Surface Termination and Defectivity

The application of nanotechnology in developing novel thermoelectric materials has yielded remarkable advancements in material efficiency. In many instances, dimensional constraints have resulted in a beneficial decoupling of thermal conductivity and power factor, leading to large increases in the achievable thermoelectric figure of merit (ZT). For instance, the ZT of silicon increases by nearly two orders of magnitude when transitioning from bulk single crystals to nanowires. Metal-assisted chemical etching offers a viable, low-cost route for preparing silicon nanopillars for use in thermoelectric devices. The aim of this paper is to review strategies for obtaining high-density forests of Si nanopillars and achieving high-quality contacts on them. We will discuss how electroplating can be used for this aim. As an alternative, nanopillars can be embedded into appropriate electrical and thermal insulators, with contacts made by metal evaporation on uncapped nanopillar tips. In both cases, it will be shown how achieving control over surface termination and defectivity is of paramount importance, demonstrating how a judicious control of defectivity enhances contact quality.

Wafer-Scale Fabrication of Silicon Nanocones via Controlling Catalyst Evolution in All-Wet Metal-Assisted Chemical Etching

All-wet metal-assisted chemical etching (MACE) is a simple and low-cost method to fabricate one-dimensional Si nanostructures. However, it remains a challenge to fabricate Si nanocones (SiNCs) with this method. Here, we achieved wafer-scale fabrication of SiNC arrays through an all-wet MACE process. The key to fabricate SiNCs is to control the catalyst evolution from deposition to etching stages. Different from conventional MACE processes, large-size Ag particles by solution deposition are obtained through increasing AgNO₃ concentration or extending the reaction time in the seed solution. Then, the large-size Ag particles are simultaneously etched during the Si etching process in an etching solution with a high H₂O₂ concentration due to the accelerated cathode process and inhibited anode process in Ag/Si microscopic galvanic cells. The successive decrease of Ag particle sizes causes the proportionate increase of diameters of the etched Si nanostructures, forming SiNC arrays. The SiNC arrays exhibit a stronger light-trapping ability and better photoelectrochemical performance compared with Si nanowire arrays. SiNCs were fabricated by using n-type 1-10 Ω cm Si(100) wafers in this work. Though the specific experimental conditions for preparing SiNCs may differ when using different Si wafers, the summarized diagram will still provide valuable guidance for morphology control of Si nanostructures in MACE processes.

Surface-enhanced Raman scattering (SERS) spectroscopy on localized silver nanoparticle-decorated porous silicon substrate

Surface-enhanced Raman scattering (SERS) spectroscopy is a rapid and non-destructive optical detection method that has been applied in various applications. Recently, three-dimensional (3D) substrate-based silicon nanostructures have been widely used as SERS substrates due to their high detection sensitivity, repeatability, and reusability. This paper uses a simple and low-cost electroless etching deposition process to generate silver nanoparticle-decorated porous silicon (Ag-PS) substrates. We propose a contact deposition process to generate localized Ag-PS (LocAg-PS) for SERS analysis. Due to the hydrophilic LocAg-PS pad on the hydrophobic PS background, the sample droplets self-aligned to the predefined LocAg-PS pads and condensed into a higher local concentration for high sensitivity SERS detection without extensive search for the hot spot. The effects of critical fabrication parameters and SERS analysis on the LocAg-PS surface were evaluated.

Solution processable in situ passivated silicon nanowires

The 1D confinement of silicon in the form of a nanowire revives its newness with the emergence of new optical and electronic properties. However, the development of a production process for silicon nanowires (SiNWs) having a high quality crystalline core and exhibiting good stability in solution with effective outer-shell defect passivation is still a challenge. In this work, SiNWs are prepared from a silicon wafer using solution processing steps, and importantly outer-shell-defect passivation is achieved by in situ grafting of organic molecules based on thin films. Defect passivation and the high quality of the SiNWs are confirmed with thin films on glass and flexible plastic substrates. A dramatic enhancement in both the fluorescence lifetime and infrared photoluminescence is observed. The in situ organic passivation of SiNWs has potential application in all low-dimensional silicon devices including infrared detectors, solar cells and lithium-ion battery anodes.

Nanowire Electronics: From Nanoscale to Macroscale

Semiconductor nanowires have attracted extensive interest as one of the best-defined classes of nanoscale building blocks for the bottom-up assembly of functional electronic and optoelectronic devices over the past two decades. The article provides a comprehensive review of the continuing efforts in exploring semiconductor nanowires for the assembly of functional nanoscale electronics and macroelectronics. Specifically, we start with a brief overview of the synthetic control of various semiconductor nanowires and nanowire heterostructures with precisely controlled physical dimension, chemical composition, heterostructure interface, and electronic properties to define the material foundation for nanowire electronics. We then summarize a series of assembly strategies developed for creating well-ordered nanowire arrays with controlled spatial position, orientation, and density, which are essential for constructing increasingly complex electronic devices and circuits from synthetic semiconductor nanowires. Next, we review the fundamental electronic properties and various single nanowire transistor concepts. Combining the designable electronic properties and controllable assembly approaches, we then discuss a series of nanoscale devices and integrated circuits assembled from nanowire building blocks, as well as a unique design of solution-processable nanowire thin-film transistors for high-performance large-area flexible electronics. Last, we conclude with a brief perspective on the standing challenges and future opportunities.

Tailoring the robust superhydrophobic silicon textures with stable photodetection properties

Surface hydrophobicity of silicon with sound durability under mechanical abrasion is highly desirable for practical needs. However, the reported micro-pyramid/nanowires structures suffer from the saturation characteristics of contact angle at around 132 degree, which impede the promotions toward reaching the state of superhydrophobicity. The present study focuses on the realization of two-scale silicon hierarchical structures prepared with the facile, rapid and large-area capable chemical etching methods without the need of lithographic patterning. The designed structures, with the well combination of microscale inverted pyramids and nanowire arrays, dramatically lead to the increased wetting angle of 157.2 degree and contact-angle hysteresis of 9.4 degree. In addition, the robustness test reveals that these hierarchical textures possess the narrow contact-angle change of 4 degree responding to the varied pH values, and maintain a narrow deviation of 2 degree in wetting angle after experiencing the abrasion test. Moreover, the highly stable photodetection characteristics of such two-scale structures were identified, showing the reliable photocurrents with less than 3% of deviation under wide range of environmental humidity. By adopting a simple chemical treatment, the wetting control is demonstrated for reliable transition of superhydrophobicity and superhydrophilicity.

Efficient Photocatalysts Made by Uniform Decoration of Cu2O Nanoparticles on Si Nanowire Arrays with Low Visible Reflectivity

Highly uniformed decorations of Cu₂O nanoparticles on the sidewalls of silicon nanowires (SiNWs) with high aspect ratio were prepared through a two-step electroless deposition at room temperature. Morphology evolutions and photocatalytic performance of SiNWs decorated with aggregated and dispersed Cu₂O nanoparticles were unveiled, and the correlated photodegradation kinetics was identified. In comparison with the conventional direct loadings where the aggregated Cu₂O/SiNW structures were created, the uniform incorporation of Cu₂O with SiNWs exhibited more than three and nine times of improved photodegradation efficiency than the aggregated-Cu₂O/SiNWs and sole SiNWs, respectively.

Solution-processed ZnO/Si based heterostructures with enhanced photocatalytic performance

Well-incorporated ZnO/SiNW arrays with reliable photocatalytic activity were prepared by an all-solution processed method.

Hybrid black silicon solar cells textured with the interplay of copper-induced galvanic displacement

Metal-assisted chemical etching (MaCE) has been widely employed for the fabrication of regular silicon (Si) nanowire arrays. These features were originated from the directional etching of Si preferentially along <100> orientations through the catalytic assistance of metals, which could be gold, silver, platinum or palladium. In this study, the dramatic modulation of etching profiles toward pyramidal architectures was undertaken by utilizing copper as catalysts through a facile one-step etching process, which paved the exceptional way on the texturization of Si for advanced photovoltaic applications. Detailed examinations of morphological evolutions, etching kinetics and formation mechanism were performed, validating the distinct etching model on Si contributed from cycling reactions of copper deposition and dissolution under a quasi-stable balance. In addition, impacts of surface texturization on the photovoltaic performance of organic/inorganic hybrid solar cells were revealed through the spatial characterizations of voltage fluctuations upon light mapping analysis. It was found that the pyramidal textures made by copper-induced cycling reactions exhibited the sound antireflection characteristics, and further achieved the leading conversion efficiency of 10.7%, approximately 1.8 times and beyond 1.2 times greater than that of untexturized and nanowire-based solar cells, respectively.