High speed e-beam writing for large area photonic nanostructures - a choice of parameters

Small Feature-Size Transistors Based on Low-Dimensional Materials: From Structure Design to Nanofabrication Techniques

For several decades after Moore's Law is proposed, there is a continuous effort to reduce the feature-size of transistors. However, as the size of transistors continues to decrease, numerous challenges and obstacles including severe short channel effects (SCEs) are emerging. Recently, low-dimensional materials have provided new opportunities for constructing small feature-size transistors due to their superior electrical properties compared to silicon. Here, state-of-the-art low-dimensional materials-based transistors with small feature-sizes are reviewed. Different from other works that mainly focus on material characteristics of a specific device structure, the discussed topics are utilizing device structure design including vertical structure and nano-gate structure, and nanofabrication techniques to achieve small feature-sizes of transistors. A comprehensive summary of these small feature-size transistors is presented by illustrating their operation mechanism, relevant fabrication processes, and corresponding performance parameters. Besides, the role of small feature-size transistors based on low-dimensional materials in further reducing the small footprint is also clarified and their cutting-edge applications are highlighted. Finally, a comparison and analysis between state-of-art transistors is made, as well as a glimpse into the future research trajectory of low dimensional materials-based small feature-size transistors is briefly outlined.

Analogue of electromagnetically induced transparency in square slotted silicon metasurfaces supporting bound states in the continuum

In this work, a silicon metasurface designed to support electromagnetically induced transparency (EIT) based on quasi-bound states in the continuum (qBIC) is proposed and theoretically demonstrated in the near-infrared spectrum. The metasurface consists of a periodic array of square slot rings etched in a silicon layer. The interruption of the slot rings by a silicon bridge breaks the symmetry of the structure producing qBIC stemming from symmetry-protected states, as rigorously demonstrated by a group theory analysis. One of the qBIC is found to behave as a resonance-trapped mode in the perturbed metasurface, which obtains very high quality factor values at certain dimensions of the silicon bridge. Thanks to the interaction of the sharp qBIC resonances with a broadband bright background mode, sharp high-transmittance peaks are observed within a low-transmittance spectral window, thus producing a photonic analogue of EIT. Moreover, the resonator possesses a simple bulk geometry with channels that facilitate the use in biosensing. The sensitivity of the resonant qBIC on the refractive index of the surrounding material is calculated in the context of refractometric sensing. The sharp EIT-effect of the proposed metasurface, along with the associated strong energy confinement may find direct use in emerging applications based on strong light-matter interactions, such as non-linear devices, lasing, biological sensors, optical trapping, and optical communications.

Nanometer-scale patterning of hard and soft interfaces: from photolithography to molecular-scale design

Many areas of modern materials chemistry, from nanoscale electronics to regenerative medicine, require design of precisely-controlled chemical environments at near-molecular scales on both hard and soft surfaces.

Scalable Fabrication of Metallic Nanogaps at the Sub-10 nm Level

Metallic nanogaps with metal-metal separations of less than 10 nm have many applications in nanoscale photonics and electronics. However, their fabrication remains a considerable challenge, especially for applications that require patterning of nanoscale features over macroscopic length-scales. Here, some of the most promising techniques for nanogap fabrication are evaluated, covering established technologies such as photolithography, electron-beam lithography (EBL), and focused ion beam (FIB) milling, plus a number of newer methods that use novel electrochemical and mechanical means to effect the patterning. The physical principles behind each method are reviewed and their strengths and limitations for nanogap patterning in terms of resolution, fidelity, speed, ease of implementation, versatility, and scalability to large substrate sizes are discussed.

Direct X-ray and electron-beam lithography of halogenated zeolitic imidazolate frameworks

Metal-organic frameworks (MOFs) offer disruptive potential in micro- and optoelectronics because of the unique properties of these microporous materials. Nanoscale patterning is a fundamental step in the implementation of MOFs in miniaturized solid-state devices. Conventional MOF patterning methods suffer from low resolution and poorly defined pattern edges. Here, we demonstrate the resist-free, direct X-ray and electron-beam lithography of MOFs. This process avoids etching damage and contamination and leaves the porosity and crystallinity of the patterned MOFs intact. The resulting high-quality patterns have excellent sub-50-nm resolution, and approach the mesopore regime. The compatibility of X-ray and electron-beam lithography with existing micro- and nanofabrication processes will facilitate the integration of MOFs in miniaturized devices.

Integrated bioelectronic proton-gated logic elements utilizing nanoscale patterned Nafion

A central endeavour in bioelectronics is the development of logic elements to transduce and process ionic to electronic signals. Motivated by this challenge, we report fully monolithic, nanoscale logic elements featuring n- and p-type nanowires as electronic channels that are proton-gated by electron-beam patterned Nafion. We demonstrate inverter circuits with state-of-the-art ion-to-electron transduction performance giving DC gain exceeding 5 and frequency response up to 2 kHz. A key innovation facilitating the logic integration is a new electron-beam process for patterning Nafion with linewidths down to 125 nm. This process delivers feature sizes compatible with low voltage, fast switching elements. This expands the scope for Nafion as a versatile patternable high-proton-conductivity element for bioelectronics and other applications requiring nanoengineered protonic membranes and electrodes.

Dewetting behavior of Ge layers on SiO2 under annealing

The solid-state dewetting phenomenon in Ge layers on SiO2 is investigated as a function of layer thickness dGe (from 10 to 86 nm) and annealing temperature. The dewetting is initiated at about 580-700 °C, depending on dGe, through the appearance of surface undulation leading to the particle formation and the rupture of Ge layers by narrow channels or rounded holes in the layers with the thicknesses of 10-60 and 86 nm, respectively. The channel widths are significantly narrower than the distance between the particles that causes the formation of thinned Ge layer areas between particles at the middle dewetting stage. The thinned areas are then agglomerated into particles of smaller sizes, leading to the bimodal distributions of the Ge particles which are different in shape and size. The existence of a maximum in the particle pair correlation functions, along with the quadratic dependence of the corresponding particle spacing on dGe, may indicate the spinodal mechanism of the dewetting in the case of relatively thin Ge layers. Despite the fact that the particle shape, during the solid-state dewetting, is not thermodynamically equilibrium, the use of the Young's equation and contact angles allows us to estimate the particle/substrate interface energy.

Low-Cost Nanostructures from Nanoparticle-Assisted Large-Scale Lithography Significantly Enhance Thermal Energy Transport across Solid Interfaces

Enhancing thermal energy transport across solid interfaces is of critical importance to a wide variety of applications ranging from energy systems and lighting devices to electronics. Nanoscale surface roughness is usually considered detrimental to interfacial thermal transport because of its role in phonon scattering. In this study, however, we demonstrate significant thermal conductance enhancements across metal-semiconductor interfaces by as much as 90% higher than that of the planar interfaces using engineered nanostructures fabricated by Au nanoparticle (NP)-assisted lithography, where self-assembled Au NPs are used as an efficient etching mask to pattern solid substrates over large surface areas. The enlarged interfacial contact area due to the presence of nanostructures is the main reason for the significantly enhanced thermal transport. It is further demonstrated that the conductance can be systematically tuned over a wide range through the use of the Au NP self-assembly process that is regulated by a sacrificial Sb layer whose thickness determines the size and density of the nanostructures produced. This strategy is tested on two technologically important semiconductors, Si and GaN, and their interfacial thermal conductance with Al being measured using the time-domain thermoreflectance technique. Moreover, the nanostructured interfaces can maintain the enhanced conductance for a temperature range of 30-110 °C-the operating temperatures commonly experienced by energy, lighting, and electronic devices. Our results could provide a wafer-scale and low-cost strategy for improving the thermal management of these devices.

Concurrent design of quasi-random photonic nanostructures

Nanostructured surfaces with quasi-random geometries can manipulate light over broadband wavelengths and wide ranges of angles. Optimization and realization of stochastic patterns have typically relied on serial, direct-write fabrication methods combined with real-space design. However, this approach is not suitable for customizable features or scalable nanomanufacturing. Moreover, trial-and-error processing cannot guarantee fabrication feasibility because processing-structure relations are not included in conventional designs. Here, we report wrinkle lithography integrated with concurrent design to produce quasi-random nanostructures in amorphous silicon at wafer scales that achieved over 160% light absorption enhancement from 800 to 1,200 nm. The quasi-periodicity of patterns, materials filling ratio, and feature depths could be independently controlled. We statistically represented the quasi-random patterns by Fourier spectral density functions (SDFs) that could bridge the processing-structure and structure-performance relations. Iterative search of the optimal structure via the SDF representation enabled concurrent design of nanostructures and processing.

Chirped guided-mode resonance biosensor

Advanced biomedical diagnostic technologies fulfill an important role in improving health and well-being in society. A large number of excellent technologies have already been introduced and have given rise to the "lab-on-a-chip" paradigm. Most of these technologies, however, require additional instrumentation for interfacing and readout, so they are often confined to the laboratory and are not suitable for use in the field or in wider clinical practice. Other technologies require a light coupling element, such as a grating coupler or a fiber coupler, which complicates packaging. Here, we introduce a novel biosensor based on a chirped guided-mode resonant grating. The chirped grating combines the sensing function with the readout function by translating spectral information into spatial information that is easily read out with a simple CMOS camera. We demonstrate a refractive index sensitivity of 137 nm/RIU and an extrapolated limit of detection of 267 pM for the specific binding of an immunoglobulin G antibody. The chirped guided-mode resonance approach introduces a new degree of freedom for sensing biomedical information that combines high sensitivity with autonomous operation. We estimate that the cost of components is U.S. $10 or less when mass manufactured, so the technology has the potential to truly transform point-of-care applications.