Low-temperature remote plasma enhanced atomic layer deposition of ZrO2/zircone nanolaminate film for efficient encapsulation of flexible organic light-emitting diodes

Conformal Zn-Benzene Dithiol Thin Films for Temperature-Sensitive Electronics Grown via Industry-Feasible Atomic/Molecular Layer Deposition Technique

The atomic/molecular layer deposition (ALD/MLD) technique combining both inorganic and organic precursors is strongly emerging as a unique tool to design exciting new functional metal-organic thin-film materials. Here, this method is demonstrated to work even at low deposition temperatures and can produce highly stable and conformal thin films, fulfilling the indispensable prerequisites of today's 3D microelectronics and other potential industrial applications. This new ALD/MLD process is developed for Zn-organic thin films grown from non-pyrophoric bis-3-(N,N-dimethylamino)propyl zinc [Zn(DMP)2] and 1,4-benzene dithiol (BDT) precursors. This process yields air-stable Zn-BDT films with appreciably high growth per cycle (GPC) of 4.5 Å at 60 °C. The Zn/S ratio is determined at 0.5 with Rutherford backscattering spectrometry (RBS), in line with the anticipated (Zn─S─C6H6─S─)n bonding scheme. The high degree of conformality is shown using lateral high-aspect-ratio (LHAR) test substrates; scanning electron microscopy (SEM) analysis shows that the film penetration depth (PD) into the LHAR structure with cavity height of 500 nm is over 200 µm (i.e., aspect-ratio of 400). It is anticipated that the electrically insulating metal-organic Zn-BDT thin films grown via the solvent-free ALD/MLD technique, can be excellent barrier layers for temperature-sensitive and flexible electronic devices.

Atomic Layer Deposition of Metal Oxides and Chalcogenides for High Performance Transistors

Atomic layer deposition (ALD) is a deposition technique well-suited to produce high-quality thin film materials at the nanoscale for applications in transistors. This review comprehensively describes the latest developments in ALD of metal oxides (MOs) and chalcogenides with tunable bandgaps, compositions, and nanostructures for the fabrication of high-performance field-effect transistors. By ALD various n-type and p-type MOs, including binary and multinary semiconductors, can be deposited and applied as channel materials, transparent electrodes, or electrode interlayers for improving charge-transport and switching properties of transistors. On the other hand, MO insulators by ALD are applied as dielectrics or protecting/encapsulating layers for enhancing device performance and stability. Metal chalcogenide semiconductors and their heterostructures made by ALD have shown great promise as novel building blocks to fabricate single channel or heterojunction materials in transistors. By correlating the device performance to the structural and chemical properties of the ALD materials, clear structure-property relations can be proposed, which can help to design better-performing transistors. Finally, a brief concluding remark on these ALD materials and devices is presented, with insights into upcoming opportunities and challenges for future electronics and integrated applications.

Recent Criterion on Stability Enhancement of Perovskite Solar Cells

Perovskite solar cells (PSCs) have captured the attention of the global energy research community in recent years by showing an exponential augmentation in their performance and stability. The supremacy of the light-harvesting efficiency and wider band gap of perovskite sensitizers have led to these devices being compared with the most outstanding rival silicon-based solar cells. Nevertheless, there are some issues such as their poor lifetime stability, considerable J–V hysteresis, and the toxicity of the conventional constituent materials which restrict their prevalence in the marketplace. The poor stability of PSCs with regard to humidity, UV radiation, oxygen and heat especially limits their industrial application. This review focuses on the in-depth studies of different direct and indirect parameters of PSC device instability. The mechanism for device degradation for several parameters and the complementary materials showing promising results are systematically analyzed. The main objective of this work is to review the effectual strategies of enhancing the stability of PSCs. Several important factors such as material engineering, novel device structure design, hole-transporting materials (HTMs), electron-transporting materials (ETMs), electrode materials preparation, and encapsulation methods that need to be taken care of in order to improve the stability of PSCs are discussed extensively. Conclusively, this review discusses some opportunities for the commercialization of PSCs with high efficiency and stability.

Electrochemical Analysis of Polymer Membrane with Inorganic Nanoparticles for High-Temperature PEM Fuel Cells

In order to solve the challenge that battery performance rapidly deteriorates at a high temperature condition of 100 °C or higher, ZrO2-TiO2 (ZT) with various Zr:Ti ratios synthesized by a sol-gel method were impregnated in a Nafion membrane. Through material characterization, a unique ZT crystal phase peak with a Zr-O-Ti bond was identified, and the band range associated with this bond and intrinsic functional group region could be identified. These prepared powders were blended with 10% (w/w) Nafion-water dispersion to prepare composite Nafion membranes (NZTs). The water uptake increased and the ion exchange capacity decreased as the TiO2 content increased in the NZTs in which particles were uniformly distributed. These results were superior to those of the conventional Nafion 112. The electrochemical properties of all membranes was measured using a polarization curve in a single cell with a reaction area of 9 cm2, and the operating conditions in humidified H2/air was 120 °C under 50% relative humidity (RH) and 2 atm. The composite membrane cell with nanoparticles of a Zr:Ti ratio of 1:3 (NZT13) exhibited the best electrochemical characteristics. These results can be explained by the improved physicochemical properties of NZT13, such as optimized water content and ion exchange capacity, strong intermolecular forces acting between water and nanofillers (δ), and increased torsion by the fillers (τ). The results of this study show that the NZT membrane can replace a conventional membrane under high-temperature and low-humidity conditions. To examine the effect of the content of the inorganic nanomaterials in the composite membrane, a composite membrane (NZT-20, NZT-30) having an inorganic nano-filler content of 20 or 30% (w/w) was also prepared. The performance was high in the order of NZT13, NZT-20, and NZT-30. This shows that not only the operating conditions but also the particle content can significantly affect the performance.

Effect of Process Temperature on Density and Electrical Characteristics of Hf0.5Zr0.5O2 Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition

HfxZr1−xO2 (HZO) thin films have excellent potential for application in various devices, including ferroelectric transistors and semiconductor memories. However, such applications are hindered by the low remanent polarization (Pr) and fatigue endurance of these films. To overcome these limitations, in this study, HZO thin films were fabricated via plasma-enhanced atomic layer deposition (PEALD), and the effects of the deposition and post-annealing temperatures on the density, crystallinity, and electrical properties of the thin films were analyzed. The thin films obtained via PEALD were characterized using cross-sectional transmission electron microscopy images and energy-dispersive spectroscopy analysis. An HZO thin film deposited at 180 °C exhibited the highest o-phase proportion as well as the highest density. By contrast, mixed secondary phases were observed in a thin film deposited at 280 °C. Furthermore, a post-annealing temperature of 600 °C yielded the highest thin film density, and the highest 2Pr value and fatigue endurance were obtained for the film deposited at 180 °C and post-annealed at 600 °C. In addition, we developed three different methods to further enhance the density of the films. Consequently, an enhanced maximum density and exceptional fatigue endurance of 2.5 × 107 cycles were obtained.

Low-temperature ALD/MLD growth of alucone and zincone thin films from non-pyrophoric precursors

The combined atomic/molecular layer deposition (ALD/MLD) technique is emerging as a state-of-the-art synthesis route for new metal-organic thin-film materials with a multitude of properties by combining those of the inorganic...

Atomic-Layer-Deposited SiOx/SnOx Nanolaminate Structure for Moisture and Hydrogen Gas Diffusion Barriers

High-density SnO_x and SiO_x thin films were deposited via atomic layer deposition (ALD) at low temperatures (100 °C) using tetrakis(dimethylamino)tin(IV) (TDMASn) and di-isopropylaminosilane (DIPAS) as precursors and hydrogen peroxide (H₂O₂) and O₂ plasma as reactants, respectively. The thin-film encapsulation (TFE) properties of SnO_x and SiO_x were demonstrated with thickness dependence measurements of the water vapor transmission rate (WVTR) evaluated at 50 °C and 90% relative humidity, and different TFE performance tendencies were observed between thermal and plasma ALD SnO_x. The film density, crystallinity, and pinholes formed in the SnO_x film appeared to be closely related to the diffusion barrier properties of the film. Based on the above results, a nanolaminate (NL) structure consisting of SiO_x and SnO_x deposited using plasma-enhanced ALD was measured using WVTR (H₂O molecule diffusion) at 2.43 × 10^-5 g/m² day with a 10/10 nm NL structure and time-lag gas permeation measurement (H₂ gas diffusion) for applications as passivation layers in various electronic devices.

Low-Temperature As-Grown Crystalline β-Ga2O3 Films via Plasma-Enhanced Atomic Layer Deposition

We report on the low-temperature growth of crystalline Ga₂O₃ films on Si, sapphire, and glass substrates using plasma-enhanced atomic layer deposition (PEALD) featuring a hollow-cathode plasma source. Films were deposited by using triethylgallium (TEG) and Ar/O₂ plasma as metal precursor and oxygen co-reactant, respectively. Growth experiments have been performed within 150-240 °C substrate temperature and 30-300 W radio-frequency (rf) plasma power ranges. Additionally, each unit AB-type ALD cycle was followed by an in situ Ar plasma annealing treatment, which consisted of an extra (50-300 W) Ar plasma exposure for 20 s ending just before the next TEG pulse. The growth per cycle (GPC) of the films without Ar plasma annealing step ranged between 0.69 and 1.31 Å/cycle, and as-grown refractive indices were between 1.67 and 1.75 within the scanned plasma power range. X-ray diffraction (XRD) measurements showed that Ga₂O₃ films grown without in situ Ar plasma annealing exhibited amorphous character irrespective of substrate temperature and rf power values. With the incorporation of the in situ Ar plasma annealing process, the GPC of Ga₂O₃ films ranged between 0.76 and 1.03 Å/cycle along with higher refractive index values of 1.75-1.79. The increased refractive index (1.79) and slightly reduced GPC (1.03 Å/cycle) at 250 W plasma annealing indicated possible densification and crystallization of the films. Indeed, X-ray measurements confirmed that in situ plasma annealed films grow in a monoclinic β-Ga₂O₃ crystal phase. The film crystallinity and density further enhance (from 5.11 to 5.60 g/cm³) by increasing the rf power value used during in situ Ar plasma annealing process. X-ray photoelectron spectroscopy (XPS) measurement of the β-Ga₂O₃ sample grown under optimal in situ plasma annealing power (250 W) revealed near-ideal film stoichiometry (O/Ga of ∼1.44) with relatively low carbon content (∼5 at. %), whereas 50 W rf power treated film was highly non-stoichiometric (O/Ga of ∼2.31) with considerably elevated carbon content. Our results demonstrate the effectiveness of in situ Ar plasma annealing process to transform amorphous wide bandgap oxide semiconductors into crystalline films without needing high-temperature post-deposition annealing treatment.

Single-step approach to sensitized luminescence through bulk-embedded organics in crystalline fluorides

Luminescent materials enable warm white LEDs, molecular tagging, enhanced optoelectronics and can improve energy harvesting. With the recent development of multi-step processes like down- and upconversion and the difficulty in sensitizing these, it is clear that optimizing all properties simultaneously is not possible within a single material class. In this work, we have utilized the layer-by-layer approach of atomic layer deposition to combine broad absorption from an aromatic molecule with the high emission yields of crystalline multi-layer lanthanide fluorides in a single-step nanocomposite process. This approach results in complete energy transfer from the organic molecule while providing inorganic fluoride-like lanthanide luminescence. Sm³⁺ is easily quenched by organic sensitizers, but in our case we obtain strong fluoride-like Sm³⁺ emission sensitized by strong UV absorption of terephthalic acid. This design allows combinations of otherwise incompatible species, both with respect to normally incompatible synthesis requirements and in controlling energy transfer and quenching routes.

Hybrid nanostructured plasmonic electrodes for flexible organic light-emitting diodes

Improved performance in flexible organic light-emitting diodes (OLEDs) is demonstrated by using a hybrid nanostructured plasmonic electrode consisting of silver nanowires (AgNWs) decorated with silver nanoparticles (AgNPs) and covered by exfoliated graphene sheets. Such all-solution processed electrodes show high optical transparency and electrical conductivity. When integrated in an OLED with super yellow polyphenylene vinylene as the emissive layer, the plasmon coupling of the NW-NP hybrid plasmonic system is found to significantly enhance the fluorescence, demonstrated by both simulations and photoluminescence measurements, leading to a current efficiency of 11.61 cd A^-1 and a maximum luminance of 20 008 cd m^-2 in OLEDs. Stress studies reveal a superior mechanical flexibility to the commercial indium-tin-oxide (ITO) counterparts, due to the incorporation of exfoliated graphene sheets. Our results show that these hybrid nanostructured plasmonic electrodes can be applied as an effective alternative to ITO for use in high-performance flexible OLEDs.

Flexible ε-Fe2O3-Terephthalate Thin-Film Magnets through ALD/MLD

Pliable and lightweight thin-film magnets performing at room temperature are indispensable ingredients of the next-generation flexible electronics. However, conventional inorganic magnets based on f-block metals are rigid and heavy, whereas the emerging organic/molecular magnets are inferior regarding their magnetic characteristics. Here we fuse the best features of the two worlds, by tailoring ε-Fe₂O₃-terephthalate superlattice thin films with inbuilt flexibility due to the thin organic layers intimately embedded within the ferrimagnetic ε-Fe₂O₃ matrix; these films are also sustainable as they do not contain rare heavy metals. The films are grown with sub-nanometer-scale accuracy from gaseous precursors using the atomic/molecular layer deposition (ALD/MLD) technique. Tensile tests confirm the expected increased flexibility with increasing organic content reaching a 3-fold decrease in critical bending radius (2.4 ± 0.3 mm) as compared to ε-Fe₂O₃ thin film (7.7 ± 0.3 mm). Most remarkably, these hybrid ε-Fe₂O₃-terephthalate films do not compromise the exceptional intrinsic magnetic characteristics of the ε-Fe₂O₃ phase, in particular the ultrahigh coercive force (∼2 kOe) even at room temperature.

Structural, Optical and Electrical Properties of HfO2 Thin Films Deposited at Low-Temperature Using Plasma-Enhanced Atomic Layer Deposition

HfO₂ was deposited at 80–250 °C by plasma-enhanced atomic layer deposition (PEALD), and properties were compared with those obtained by using thermal atomic layer deposition (thermal ALD). The ALD window, i.e., the region where the growth per cycle (GPC) is constant, shifted from high temperatures (150–200 °C) to lower temperatures (80–150 °C) in PEALD. HfO₂ deposited at 80 °C by PEALD showed higher density (8.1 g/cm³) than those deposited by thermal ALD (5.3 g/cm³) and a smooth surface (RMS Roughness: 0.2 nm). HfO₂ deposited at a low temperature by PEALD showed decreased contaminants compared to thermal ALD deposited HfO₂. Values of refractive indices and optical band gap of HfO₂ deposited at 80 °C by PEALD (1.9, 5.6 eV) were higher than those obtained by using thermal ALD (1.7, 5.1 eV). Transparency of HfO₂ deposited at 80 °C by PEALD on polyethylene terephthalate (PET) was high (> 84%). PET deposited above 80 °C was unable to withstand heat and showed deformation. HfO₂ deposited at 80 °C by PEALD showed decreased leakage current from 1.4 × 10⁻² to 2.5 × 10⁻⁵ A/cm² and increased capacitance of approximately 21% compared to HfO₂ using thermal ALD. Consequently, HfO₂ deposited at a low temperature by PEALD showed improved properties compared to HfO₂ deposited by thermal ALD.

Development of ALD Coatings for Harsh Environment Applications

Atomic layer deposition (ALD) is a well-known technique for the fabrication of ultrathin and highly conformal barrier coatings which have extensively been used for the protection of electronic devices in open atmospheric conditions. Here, we extend the scope for the application of low-temperature-deposited plasma-enhanced ALD barrier coatings for the protection of devices in a variety of chemical environments. The chemical stability tests were conducted in 3.5% NaCl, sea water, HCl (pH 4), and H₂SO₄ (pH 4) solutions for ALD Al₂O₃, HfO₂, TiO₂, and ZrO₂, deposited at 100 °C on TiO₂-coated Au and ALD ZnO (photoactive)-coated Si substrates. Using electrochemical impedance spectroscopy (EIS) and photoluminescence (PL) study, various aspects of the barrier properties and performance of ALD films in harsh chemical environments were explored. We demonstrate that the combined approach involving EIS and PL provides unique insights into the suitability of ALD films as barriers in harsh environments involving ionic solutions. The observations from EIS and PL tests are supported by the X-ray photoelectron spectroscopy analysis of ALD materials. Of the materials tested, ALD TiO₂ and ZrO₂ were found to be the most stable, chemically, in all four solutions, whereas TiO₂ was a better permeation barrier.

Low-temperature atomic layer deposition of SiO2/Al2O3 multilayer structures constructed on self-standing films of cellulose nanofibrils

In this paper, we have optimized a low-temperature atomic layer deposition (ALD) of SiO₂ using AP-LTO® 330 and ozone (O₃) as precursors, and demonstrated its suitability to surface-modify temperature-sensitive bio-based films of cellulose nanofibrils (CNFs). The lowest temperature for the thermal ALD process was 80°C when the silicon precursor residence time was increased by the stop-flow mode. The SiO₂ film deposition rate was dependent on the temperature varying within 1.5-2.2 Å cycle^-1 in the temperature range of 80-350°C, respectively. The low-temperature SiO₂ process that resulted was combined with the conventional trimethyl aluminium + H₂O process in order to prepare thin multilayer nanolaminates on self-standing CNF films. One to six stacks of SiO₂/Al₂O₃ were deposited on the CNF films, with individual layer thicknesses of 3.7 nm and 2.6 nm, respectively, combined with a 5 nm protective SiO₂ layer as the top layer. The performance of the multilayer hybrid nanolaminate structures was evaluated with respect to the oxygen and water vapour transmission rates. Six stacks of SiO₂/Al₂O with a total thickness of approximately 35 nm efficiently prevented oxygen and water molecules from interacting with the CNF film. The oxygen transmission rates analysed at 80% RH decreased from the value for plain CNF film of 130 ml m^-2 d^-1 to 0.15 ml m^-2 d^-1, whereas the water transmission rates lowered from 630 ± 50 g m^-2 d^-1 down to 90 ± 40 g m^-2 d^-1This article is part of a discussion meeting issue 'New horizons for cellulose nanotechnology'.