Integrated wafer-scale ultra-flat graphene by gradient surface energy modulation

The integration of large-scale two-dimensional (2D) materials onto semiconductor wafers is highly desirable for advanced electronic devices, but challenges such as transfer-related crack, contamination, wrinkle and doping remain. Here, we developed a generic method by gradient surface energy modulation, leading to a reliable adhesion and release of graphene onto target wafers. The as-obtained wafer-scale graphene exhibited a damage-free, clean, and ultra-flat surface with negligible doping, resulting in uniform sheet resistance with only ~6% deviation. The as-transferred graphene on SiO₂/Si exhibited high carrier mobility reaching up ~10,000 cm² V⁻¹ s⁻¹, with quantum Hall effect (QHE) observed at room temperature. Fractional quantum Hall effect (FQHE) appeared at 1.7 K after encapsulation by h-BN, yielding ultra-high mobility of ~280,000 cm² V⁻¹ s⁻¹. Integrated wafer-scale graphene thermal emitters exhibited significant broadband emission in near-infrared (NIR) spectrum. Overall, the proposed methodology is promising for future integration of wafer-scale 2D materials in advanced electronics and optoelectronics.

Defect-free integration of 2D materials onto semiconductor wafers is desired to implement heterogeneous electronic devices. Here, the authors report a method to transfer high-quality graphene on target wafers via gradient surface energy modulation, leading to improved structural and electronic properties.

Organic Semiconductor Crystal Engineering for High-Resolution Layer-Controlled 2D Crystal Arrays

2D organic semiconductor crystals (2DOSCs) have extraordinary charge transport capability, adjustable photoelectric properties, and superior flexibility, and have stimulated continuous research interest for next-generation electronic and optoelectronic applications. The prerequisite for achieving large-area and high-throughput optoelectronic device integration is to fabricate high-resolution 2DOSC arrays. Patterned substrate- and template-assisted self-assembly is an effective strategy to fabricate OSC arrays. However, the film thickness is difficult to control due to the complicated crystallization process during solvent evaporation. Therefore, the manufacturing of 2DOSC arrays with high-resolution and controllable molecular-layer numbers through solution-based patterning methods remains a challenge. Herein, a two-step strategy to produce high-resolution layer-controlled 2DOSC arrays is reported. First, large-scale 2DOSCs with well-defined layer numbers are obtained by a solution-processed organic semiconductor crystal engineering method. Next, the high-resolution layer-controlled 2DOSC arrays are fabricated by a polydimethylsiloxane mold-assisted selective contact evaporation printing technique. The organic field-effect transistors (OFETs) based on 2DOSC arrays have high electrical performance and excellent uniformity. The 2,6-bis(4-hexylphenyl)anthracene 2DOSC arrays-based OFETs have a small variation of 12.5% in mobility. This strategy can be applied to various organic semiconductors and pattern arrays. These demonstrations will offer more opportunities for 2DOSCs for integrated optoelectronic devices.

Controlling Nanostructure in Inkjet Printed Organic Transistors for Pressure Sensing Applications

This work reports the development of a highly sensitive pressure detector prepared by inkjet printing of electroactive organic semiconducting materials. The pressure sensing is achieved by incorporating a quantum tunnelling composite material composed of graphite nanoparticles in a rubber matrix into the multilayer nanostructure of a printed organic thin film transistor. This printed device was able to convert shock wave inputs rapidly and reproducibly into an inherently amplified electronic output signal. Variation of the organic ink material, solvents, and printing speeds were shown to modulate the multilayer nanostructure of the organic semiconducting and dielectric layers, enabling tuneable optimisation of the transistor response. The optimised printed device exhibits rapid switching from a non-conductive to a conductive state upon application of low pressures whilst operating at very low source-drain voltages (0–5 V), a feature that is often required in applications sensitive to stray electromagnetic signals but is not provided by conventional inorganic transistors and switches. The printed sensor also operates without the need for any gate voltage bias, further reducing the electronics required for operation. The printable low-voltage sensing and signalling system offers a route to simple low-cost assemblies for secure detection of stimuli in highly energetic systems including combustible or chemically sensitive materials.

Impact of Substrate Characteristics on Stretchable Polymer Semiconductor Behavior

Stretchable conductive polymer films are required to survive not only large tensile strain but also stay functional after the reduction in applied strain. In the deformation process, the elastomer substrate that is typically employed plays a critical role in response to the polymer film. In this study, we examine the role of a polydimethylsiloxane (PDMS) elastomer substrate on the ability to achieve stretchable PDPP-4T films. In particular, we consider the adhesion and near-surface modulus of the PDMS tuned through UV/ozone (UVO) treatment on the competition between film wrinkling and plastic deformation. We also consider the role of PDMS tension on the stability of films under cyclic strain. We find that increasing the near-surface modulus of the PDMS and maintaining the PDMS in tension throughout the cyclic strain process promote plastic deformation over film wrinkling. In addition, the UVO treatment increases film adhesion to the PDMS resulting in a significantly reduced film folding and delamination. For a 20 min UVO-treated PDMS, we show that a PDPP-4T film root-mean-square roughness is consistently below 3 nm for up to 100 strain cycles with a strain range of 40%. In addition, although the film is plastically deforming, the microstructural order is largely stable as probed by grazing incidence X-ray scattering and UV-visible spectroscopy. These results highlight the importance of neighboring elastomer characteristics on the ability to achieve stretchable polymer semiconductors.

Microscale Patterning of Electrochromic Polymer Films via Soft Lithography

We present a direct fabrication technique of patterned polymeric electrochromic (EC) devices via soft lithography, enabling both negative patterning and positive patterning of the polymer. For this work, elastomeric polydimethylsiloxane (PDMS) molds were employed as not only stamps for direct contact printing of polymer inks but also templates for dewetting of polymer solutions under mild experimental conditions. We performed both negative patterning and positive patterning of a prototypical EC polymer and investigated the EC device characteristics according to solvents, solution concentrations, and pattern types. Eventually, the complex patterns, which cannot be realized by conventional shadow masking processes, and large-area structures were successfully demonstrated. We anticipate that these results will be applied to the development of various patterned devices and circuits, which may lead to further applications.

Tape nanolithography: a rapid and simple method for fabricating flexible, wearable nanophotonic devices

This paper describes a tape nanolithography method for the rapid and economical manufacturing of flexible, wearable nanophotonic devices. This method involves the soft lithography of a donor substrate with air-void nanopatterns, subsequent deposition of materials onto the substrate surface, followed by direct taping and peeling of the deposited materials by an adhesive tape. Without using any sophisticated techniques, the nanopatterns, which are preformed on the surface of the donor substrate, automatically emerge in the deposited materials. The nanopatterns can then be transferred to the tape surface. By leveraging the works of adhesion at the interfaces of the donor substrate-deposited material-tape assembly, this method not only demonstrates sub-hundred-nanometer resolution in the transferred nanopatterns on an area of multiple square inches but also exhibits high versatility and flexibility for configuring the shapes, dimensions, and material compositions of tape-supported nanopatterns to tune their optical properties. After the tape transfer, the materials that remain at the bottom of the air-void nanopatterns on the donor substrate exhibit shapes complementary to the transferred nanopatterns on the tape surface but maintain the same composition, thus also acting as functional nanophotonic structures. Using tape nanolithography, we demonstrate several tape-supported plasmonic, dielectric, and metallo-dielectric nanostructures, as well as several devices such as refractive index sensors, conformable plasmonic surfaces, and Fabry-Perot cavity resonators. Further, we demonstrate tape nanolithography-assisted manufacturing of a standalone plasmonic nanohole film and its transfer to unconventional substrates such as a cleaved facet and the curved side of an optical fiber.

Area-Controllable Stamping of Semicrystalline Copolymer Ionogels for Solid-State Electrolyte-Gated Transistors and Light-Emitting Devices

Two types of thin-film electrochemical devices (electrolyte-gated transistors and electrochemical light-emitting cells) are demonstrated using area-controllable ionogel patches generated by transfer-stamping. For the successful transfer of ionogel patches on various target substrates, thermoreversible gelation by phase-separated polymer crystals within the ionogel is essential because it allows the gel to form a conformal contact with the acceptor substrate, thereby lowering the overall Gibbs energy of the system upon transfer of the ionogel. This crystallization-mediated stamping provides a much more efficient deposition route for producing thin films of ionically conductive high-capacitance solid ionogel electrolytes. The lateral dimensions of the transferred ionogels range from 1 mm × 1 mm to 40 mm × 40 mm. These ionogel patches are incorporated in organic p-type and inorganic n-type thin-film transistors and electrochemical light-emitting devices. The resulting transistors show sub-1 V device operation with high transconductance currents, and the optoelectronic devices emit orange light through a series of electrochemical redox reactions. These results demonstrate a simple yet versatile route to employ physical ionogels for various solid-state electrochemical device applications.

Solvent-Assisted Gel Printing for Micropatterning Thin Organic-Inorganic Hybrid Perovskite Films

While tremendous efforts have been made for developing thin perovskite films suitable for a variety of potential photoelectric applications such as solar cells, field-effect transistors, and photodetectors, only a few works focus on the micropatterning of a perovskite film which is one of the most critical issues for large area and uniform microarrays of perovskite-based devices. Here we demonstrate a simple but robust method of micropatterning a thin perovskite film with controlled crystalline structure which guarantees to preserve its intrinsic photoelectric properties. A variety of micropatterns of a perovskite film are fabricated by either microimprinting or transfer-printing a thin spin-coated precursor film in soft-gel state with a topographically prepatterned elastomeric poly(dimethylsiloxane) (PDMS) mold, followed by thermal treatment for complete conversion of the precursor film to a perovskite one. The key materials development of our solvent-assisted gel printing is to prepare a thin precursor film with a high-boiling temperature solvent, dimethyl sulfoxide. The residual solvent in the precursor gel film makes the film moldable upon microprinting with a patterned PDMS mold, leading to various perovskite micropatterns in resolution of a few micrometers over a large area. Our nondestructive micropatterning process does not harm the intrinsic photoelectric properties of a perovskite film, which allows for realizing arrays of parallel-type photodetectors containing micropatterns of a perovskite film with reliable photoconduction performance. The facile transfer of a micropatterned soft-gel precursor film on other substrates including mechanically flexible plastics can further broaden its applications to flexible photoelectric systems.

Improving area-selective molecular layer deposition by selective SAM removal

Area selective molecular layer deposition (MLD) is a promising technique for achieving micro- or nanoscale patterned organic structures. However, this technique still faces challenges in attaining high selectivity, especially at large MLD cycle numbers. Here, we illustrate a new strategy for achieving high quality patterns in selective film deposition on patterned Cu/Si substrates. We employed the intrinsically selective adsorption of an octadecylphosphonic acid self-assembled monolayer (SAM) on Cu over Si surfaces to selectively create a resist layer only on Cu. MLD was then performed on the patterns to deposit organic films predominantly on the Si surface, with only small amounts growing on the Cu regions. A negative potential bias was subsequently applied to the pattern to selectively desorb the layer of SAMs electrochemically from the Cu surface while preserving the MLD films on Si. Selectivity could be enhanced up to 30-fold after this treatment.

High performance organic nonvolatile flash memory transistors with high-resolution reduced graphene oxide patterns as a floating gate

High-performance organic nonvolatile memory transistors (ONVMTs) are demonstrated, the construction of which is based on novel integration of a highly conductive polymer as a semiconductor layer, hydroxyl-free polymer as a tunneling dielectric layer, and high-resolution reduced graphene oxide (rGO) patterns as a floating gate. Finely patterned rGO, with a line width of 20-120 μm, was embedded between SiO2 and the polymer dielectric layer, which functions as a nearly isolated charge-trapping center. The resulting ONVMTs demonstrated ideal memory behavior, and the transfer characteristics promptly responded to writing and erasing the gate bias. In particular, the retention time of written/erased states tended to increase as the rGO line width was reduced, implying that the line width is a critical factor in suppressing charge release from rGO. Using a 20-μm-wide rGO pattern, a nonvolatile large memory window (>20 V) was retained for more than 5 × 10(5) s, which is 50 times longer than non-patterned rGO films.

Transfer printing of thermoreversible ion gels for flexible electronics

Thermally assisted transfer printing was employed to pattern thin films of high capacitance ion gels on polyimide, poly(ethylene terephthalate), and SiO2 substrates. The ion gels consisted of 20 wt % block copolymer poly(styrene-b-ethylene oxide-b-styrene and 80 wt % ionic liquid 1-ethyl-3-methylimidazolium bis(trifluoromethyl sulfonyl)amide. Patterning resolution was on the order of 10 μm. Importantly, ion gels containing the block polymer with short PS end blocks (3.4 kg/mol) could be transfer-printed because of thermoreversible gelation that enabled intimate gel-substrate contact at 100 °C, while gels with long PS blocks (11 kg/mol) were not printable at the same temperature due to poor wetting contact between the gel and substrates. By using printed ion gels as high-capacitance gate insulators, electrolyte-gated thin-film transistors were fabricated that operated at low voltages (<1 V) with high on/off current ratios (∼10(5)). Statistical analysis of carrier mobility, turn-on voltage, and on/off ratio for an array of printed transistors demonstrated the excellent reproducibility of the printing technique. The results show that transfer printing is an attractive route to pattern high-capacitance ion gels for flexible thin-film devices.

Improved force field for molecular modeling of poly(3-hexylthiophene)

An ab initio-based improved force field is reported for poly(3-hexylthiophene) (P3HT) in the solid state, deriving torsional parameters and partial atomic charges from ab initio molecular structure calculations with explicit treatment of the hexyl side chains. The force field is validated by molecular dynamics (MD) simulations of solid P3HT with different molecular weights including calculation of structural parameters, mass density, melting temperature, glass transition temperature, and surface tension. At 300 K, the P3HT crystalline structure features planar backbones with non-interdigitated all-trans hexyl side chains twisted ~90° from the plane of the backbone. For crystalline P3HT with infinitely long chains, the calculated 300 K mass density (1.05 g cm(-3)), the melting temperature (490 K), and the 300 K surface tension (32 mN/m) are all in agreement with reported experimental values, as is the glass transition temperature (300 K) for amorphous 20-mers.

Nanotransfer molding of free-standing nanowire and porous nanomembranes suspended on microtrenches

Direct transfer printing of functional materials has been employed in the development of sensors, displays, and energy-harvesting devices. The transfer process can be applied advantageously to depositions onto nonplanar and flexible surfaces at low temperatures. In this work, we fabricated free-standing nanowire arrays and nanomembranes on micrometer-scale trenches by nanotransfer molding. We also investigated how deposition pattern types vary with trench dimensions as well as processing pressure and temperature. Finally, a free-standing polymer membrane fabricated by nanotransfer molding was employed as a novel mask in the preparation of three-dimensional nanodot arrays.

Transfer printing techniques for materials assembly and micro/nanodevice fabrication

Transfer printing represents a set of techniques for deterministic assembly of micro-and nanomaterials into spatially organized, functional arrangements with two and three-dimensional layouts. Such processes provide versatile routes not only to test structures and vehicles for scientific studies but also to high-performance, heterogeneously integrated functional systems, including those in flexible electronics, three-dimensional and/or curvilinear optoelectronics, and bio-integrated sensing and therapeutic devices. This article summarizes recent advances in a variety of transfer printing techniques, ranging from the mechanics and materials aspects that govern their operation to engineering features of their use in systems with varying levels of complexity. A concluding section presents perspectives on opportunities for basic and applied research, and on emerging use of these methods in high throughput, industrial-scale manufacturing.

Compression of cross-linked poly(vinylidene fluoride-co-trifluoro ethylene) films for facile ferroelectric polarization

In this study, we demonstrated a facile route for enhancing the ferroelectric polarization of a chemically cross-linked poly(vinylidene fluoride-co-trifluoro ethylene) (PVDF-TrFE) film. Our method is based on thermally induced cross-linking of a PVDF-TrFE film with a 2,2,4-trimethyl-1,6-hexanediamine (THDA) agent under compression. The remanent polarization (P(r)) of a metal/ferroelectric/metal capacitor containing a cross-linked PVDF-TrFE film increased with pressure up to a certain value, whereas no change in the P(r) value was observed in the absence of THDA. A film cross-linked with 10 wt % THDA with respect to PVDF-TrFE under a pressure of 100 kPa exhibited a P(r) of approximately 5.61 μC/cm(2), which is 1.6 times higher than that in the absence of pressure. The enhanced ferroelectric polarization was attributed to highly ordered 20-nm-thick edge-on crystalline lamellae whose c-axes are aligned parallel to the substrate. The lamellae were effective for ferroelectric switching of the PVDF-TrFE when a cross-linked film was recrystallized under pressure. Furthermore, compression of a PVDF-TrFE film with a topographically prepatterned poly(dimethyl siloxane) mold gave rise to a chemically cross-linked micropattern in which edge-on crystalline lamellae were globally oriented over a very large area.

Chemically cross-linked thin poly(vinylidene fluoride-co-trifluoroethylene)films for nonvolatile ferroelectric polymer memory

Both chemically and electrically robust ferroelectric poly(vinylidene fluoride-co-trifluoro ethylene) (PVDF-TrFE) films were developed by spin-coating and subsequent thermal annealing with the thermal cross-linking agent 2,4,4-trimethyl-1,6-hexanediamine (THDA). Well-defined ferroelectric β crystalline domains were developed with THDA up to approximately 50 wt %, with respect to polymer concentration, resulting in characteristic ferroelectric hysteresis polarization-voltage loops in metal/cross-linked ferroelectric layer/metal capacitors with remnant polarization of approximately 4 μC/cm(2). Our chemically networked film allowed for facile stacking of a solution-processable organic semiconductor on top of the film, leading to a bottom-gate ferroelectric field effect transistor (FeFET). A low-voltage operating FeFET was realized with a networked PVDF-TrFE film, which had significantly reduced gate leakage current between the drain and gate electrodes. A solution-processed single crystalline tri-isopropylsilylethynyl pentacene FeFET with a chemically cross-linked PVDF-TrFE film showed reliable I-V hysteresis with source-drain ON/OFF current bistablility of 1 × 10(3) at a sweeping gate voltage of ±20 V. Furthermore, both thermal micro/nanoimprinting and transfer printing techniques were conveniently combined for micro/nanopatterning of chemically resistant cross-linked PVDF-TrFE films.