Marcus Theory and Long-Range Activationless Transport in Molecular Junctions

Intrachain transport in molecular junctions (MJs) longer than 5 nm has been modeled within the theoretical framework of Marcus theory. We show that in oligo(bisthienylbenzene)-based MJs, electronic transport involves polarons, localized on three monomers that are close to 4 nm in length. They hop and tunnel between adjacent localized sites with reorganization energies λ close to 400-600 meV and electronic coupling parameters Hab close to λ/2. As a consequence, the activation energy for intrachain transport, given by the equation ΔG* = (λ/4)(1 - 2Hab/λ)2, is close to zero, and transport along the chain is activationless, in agreement with experimental observation. On the contrary, similar calculations on conjugated oligonaphthalenefluoreneimine wires show that Hab is much less than λ/2 and predict that the activation energies for intrachain hopping between adjacent sites, close to λ/4, are ∼115 meV. This work proposes a new perspective for understanding long-range activationless transport in MJs beyond the tunneling regime.

Metal-organic Frameworks in Semiconductor Devices

Metal-organic frameworks (MOFs) are a specific class of hybrid, crystalline, nano-porous materials made of metal-ion-based 'nodes' and organic linkers. Most of the studies on MOFs largely focused on porosity, chemical and structural diversity, gas sorption, sensing, drug delivery, catalysis, and separation applications. In contrast, much less reports paid attention to understanding and tuning the electrical properties of MOFs. Poor electrical conductivity of MOFs (~10-7-10-10 S cm-1), reported in earlier studies, impeded their applications in electronics, optoelectronics, and renewable energy storage. To overcome this drawback, the MOF community has adopted several intriguing strategies for electronic applications. The present review focuses on creatively designed bulk MOFs and surface-anchored MOFs (SURMOFs) with different metal nodes (from transition metals to lanthanides), ligand functionalities, and doping entities, allowing tuning and enhancement of electrical conductivity. Diverse platforms for MOFs-based electronic device fabrications, conductivity measurements, and underlying charge transport mechanisms are also addressed. Overall, the review highlights the pros and cons of MOFs-based electronics (MOFtronics), followed by an analysis of the future directions of research, including optimization of the MOF compositions, heterostructures, electrical contacts, device stacking, and further relevant options which can be of interest for MOF researchers and result in improved devices performance.

CP-AFM Molecular Tunnel Junctions with Alkyl Backbones Anchored Using Alkynyl and Thiol Groups: Microscopically Different Despite Phenomenological Similarity

In this paper, we report results on the electronic structure and transport properties of molecular junctions fabricated via conducting probe atomic force microscopy (CP-AFM) using self-assembled monolayers (SAMs) of n-alkyl chains anchored with acetylene groups (CnA; n = 8, 9, 10, and 12) on Ag, Au, and Pt electrodes. We found that the current-voltage (I-V) characteristics of CnA CP-AFM junctions can be very accurately reproduced by the same off-resonant single-level model (orSLM) successfully utilized previously for many other junctions. We demonstrate that important insight into the energy-level alignment can be gained from experimental data of transport (processed via the orSLM) and ultraviolet photoelectron spectroscopy combined with ab initio quantum chemical information based on the many-body outer valence Green's function method. Measured conductance GAg < GAu < GPt is found to follow the same ordering as the metal work function ΦAu < ΦAu < ΦPt, a fact that points toward a transport mediated by an occupied molecular orbital (MO). Still, careful data analysis surprisingly revealed that transport is not dominated by the ubiquitous HOMO but rather by the HOMO-1. This is an important difference from other molecular tunnel junctions with p-type HOMO-mediated conduction investigated in the past, including the alkyl thiols (CnT) to which we refer in view of some similarities. Furthermore, unlike in CnT and other junctions anchored with thiol groups investigated in the past, the AFM tip causes in CnA an additional MO shift, whose independence of size (n) rules out significant image charge effects. Along with the prevalence of the HOMO-1 over the HOMO, the impact of the "second" (tip) electrode on the energy level alignment is another important finding that makes the CnA and CnT junctions different. What ultimately makes CnA unique at the microscopic level is a salient difference never reported previously, namely, that CnA's alkyne functional group gives rise to two energetically close (HOMO and HOMO-1) orbitals. This distinguishes the present CnA from the CnT, whose HOMO stemming from its thiol group is well separated energetically from the other MOs.

Can tunneling current in molecular junctions be so strongly temperature dependent to challenge a hopping mechanism? Analytical formulas answer this question and provide important insight into large area junctions

Analytical equations like Richardson-Dushman's or Shockley's provided a general, if simplified conceptual background, which was widely accepted in conventional electronics and made a fundamental contribution to advances in the field. In the attempt to develop a (highly desirable, but so far missing) counterpart for molecular electronics, in this work, we deduce a general analytical formula for the tunneling current through molecular junctions mediated by a single level that is valid for any bias voltage and temperature. Starting from this expression, which is exact and obviates cumbersome numerical integration, in the low and high temperature limits we also provide analytical formulas expressing the current in terms of elementary functions. They are accurate for broad model parameter ranges relevant for real molecular junctions. Within this theoretical framework we show that: (i) by varying the temperature, the tunneling current can vary by several orders of magnitude, thus debunking the myth that a strong temperature dependence of the current is evidence for a hopping mechanism, (ii) real molecular junctions can undergo a gradual (Sommerfeld-Arrhenius) transition from a weakly temperature dependent to a strongly ("exponential") temperature dependent current that can be tuned by the applied bias, and (iii) important insight into large area molecular junctions with eutectic gallium indium alloy (EGaIn) top electrodes can be gained. E.g., merely based on transport data, we estimate that the current carrying molecules represent only a fraction of f ≈ 4 × 10-4 out of the total number of molecules in a large area Au-S-(CH2)13-CH3/EGaIn junction.

Can room-temperature data for tunneling molecular junctions be analyzed within a theoretical framework assuming zero temperature?

Routinely, experiments on tunneling molecular junctions report values of conductances (G_RT) and currents (I_RT) measured at room temperature. On the other hand, theoretical approaches based on simplified models provide analytic formulas for the conductance (G_0K) and current (I_0K) valid at zero temperature. Therefore, interrogating the applicability of the theoretical results deduced in the zero-temperature limit to real experimental situations at room temperature (i.e., G_RT ≈ G_0K and I_RT ≈ I_0K) is a relevant aspect. Quantifying the pertaining temperature impact on the transport properties computed within the ubiquitous single-level model with Lorentzian transmission is the specific aim of the present work. Comprehensive results are presented for broad ranges of the relevant parameters (level's energy offset ε₀ and width Γ_a, and applied bias V) that safely cover values characterizing currently fabricated junctions. They demonstrate that the strongest thermal effects occur at biases below resonance (2|ε₀| - δε₀ - 0.3 ≲ |eV| - 0.3 ≲ 2|ε₀|). At fixed V, they affect an ε₀-range whose largest width δε₀ is about nine times larger than the thermal energy (δε₀ ≈ 3πk_BT) at Γ_a → 0. The numerous figures included aim to convey a quick overview on the applicability of the zero-temperature limit to a specific real junction. In quantitative terms, the conditions of applicability are expressed as mathematical inequalities involving elementary functions. They constitute the basis of a proposed interactive data-fitting procedure, which aims to guide experimentalists interested in data processing in a specific case.

Estimating the Number of Molecules in Molecular Junctions Merely Based on the Low Bias Tunneling Conductance at Variable Temperature

Temperature (T) dependent conductance G=G(T) data measured in molecular junctions are routinely taken as evidence for a two-step hopping mechanism. The present paper emphasizes that this is not necessarily the case. A curve of lnG versus 1/T decreasing almost linearly (Arrhenius-like regime) and eventually switching to a nearly horizontal plateau (Sommerfeld regime), or possessing a slope gradually decreasing with increasing 1/T is fully compatible with a single-step tunneling mechanism. The results for the dependence of G on T presented include both analytical exact and accurate approximate formulas and numerical simulations. These theoretical results are general, also in the sense that they are not limited, e.g., to the (single molecule electromigrated (SET) or large area EGaIn) fabrication platforms, which are chosen for exemplification merely in view of the available experimental data needed for analysis. To be specific, we examine in detail transport measurements for molecular junctions based on ferrocene (Fc). As a particularly important finding, we show how the present analytic formulas for G=G(T) can be utilized to compute the ratio f=Aeff/An between the effective and nominal areas of large area Fc-based junctions with an EGaIn top electrode. Our estimate of f≈0.6×10-4 is comparable with previously reported values based on completely different methods for related large area molecular junctions.

Carbon-Based Molecular Junctions for Practical Molecular Electronics

The field of molecular electronics has grown rapidly since its experimental realization in the late 1990s, with thousands of publications on how molecules can act as circuit components and the possibility of extending microelectronic miniaturization. Our research group developed molecular junctions (MJs) using conducting carbon electrodes and covalent bonding, which provide excellent temperature tolerance and operational lifetimes. A carbon-based MJ based on quantum mechanical tunneling for electronic music represents the world's first commercial application of molecular electronics, with >3000 units currently in consumer hands. The all-carbon MJ consisting of aromatic molecules and oligomers between vapor-deposited carbon electrodes exploits covalent, C-C bonding which avoids the electromigration problem of metal contacts. The high bias and temperature stability as well as partial transparency of the all-carbon MJ permit a wide range of experiments to determine charge transport mechanisms and observe photoeffects to both characterize and stimulate operating MJs. As shown in the Conspectus figure, our group has reported a variety of electronic functions, many of which do not have analogs in conventional semiconductors. Much of the described research is oriented toward the rational design of electronic functions, in which electronic characteristics are determined by molecular structure.In addition to the fabrication of molecular electronic devices with sufficient stability and operating life for practical applications, our approach was directed at two principal questions: how do electrons move through molecules that are components of an electronic circuit, and what can we do with molecules that we cannot do with existing semiconductor technology? The central component is the molecular junction consisting of a 1-20+ nm layer of covalently bonded oligomers between two electrodes of conducting, mainly sp²-hybridized carbon. In addition to describing the unique junction structure and fabrication methods, this Account summarizes the valuable insights available from photons used both as probes of device structure and dynamics and as prods to stimulate resonant transport through molecular orbitals.Short-range (<5 nm) transport by tunneling and its properties are discussed separately from the longer-range transport (5-60 nm) which bridges the gap between tunneling and transport in widely studied organic semiconductors. Most molecular electronic studies deal with the <5 nm thickness range, where coherent tunneling is generally accepted as the dominant transport mechanism. However, the rational design of devices in this range by changing molecular structure is frustrated by electronic interactions with the conducting contacts, resulting in weak structural effects on electronic behavior. When the molecular layer thickness exceeds 5 nm, transport characteristics change completely since molecular orbitals become the conduits for transport. Incident photons can stimulate transport, with the observed photocurrent tracking the absorption spectrum of the molecular layer. Low-temperature, activationless transport of photogenerated carriers is possible for up to at least 60 nm, with characteristics completely distinct from coherent tunneling and from the hopping mechanisms proposed for organic semiconductors. The Account closes with examples of phenomena and applications enabled by molecular electronics which may augment conventional microelectronics with chemical functions such as redox charge storage, orbital transport, and energy-selective photodetection.

A single level tunneling model for molecular junctions: evaluating the simulation methods

A single level tunneling model has been the most popular model system in both experimental and theoretical studies of molecular junctions. We performed a detailed simulation study on the performance of the single level tunneling model for analyzing the charge transport in molecular junctions. Three different modeling methods, including the numerical integration of the Landauer formula and two approximated analytical formulas that are extensively used for extracting key transport parameters, i.e. the energy offset and the coupling strength between molecules and electrodes from current-voltage (I-V) characteristics were compared and evaluated for their applicability. The simulation of I-V plots shows that the applicability of the two approximated analytical models is dependent on the energy offset and coupling strength. Model analysis based on the three methods performed on experimental data obtained from representative literature papers revealed that the two approximated analytical methods are neither suitable for small coupling strength nor suitable for low energy offset, and they also deviated from the exact results at high bias. These results imply that the transport parameters by the model analysis can be wrong if the models were not correctly applied under their intrinsic constraints, therefore providing wrong physical information about the system. We finally provided an applicability map as a guide for different modeling methods for charge transport studies in molecular devices.

Tailoring the Interfacial Band Offset by the Molecular Dipole Orientation for a Molecular Heterojunction Selector

Understanding and designing interfacial band alignment in a molecular heterojunction provides a foundation for realizing its desirable electronic functionality. In this study, a tailored molecular heterojunction selector is implemented by controlling its interfacial band offset between the molecular self-assembled monolayer with opposite dipole orientations and the 2D semiconductor (1L -MoS2 or 1L -WSe2 ). The molecular dipole moment direction determines the direction of the band bending of the 2D semiconductors, affecting the dominant transport pathways upon voltage application. Notably, in the molecular heterostructure with 1L -WSe2 , the opposite rectification direction is observed depending on the molecular dipole moment direction, which does not hold for the case with 1L -MoS2 . In addition, the nonlinearity of the molecular heterojunction selector can be significantly affected by the molecular dipole moment direction, type of 2D semiconductor, and metal work function. According to the choice of these heterojunction constituents, the nonlinearity is widely tuned from 1.0 × 101 to 3.6 × 104 for the read voltage scheme and from 0.4 × 101 to 2.0 × 105 for the half-read voltage scheme, which can be scaled up to an ≈482 Gbit crossbar array.

Porphyrins as building blocks for single-molecule devices

Direct measurement of single-molecule electrical transparency by break junction experiments has become a major field of research over the two last decades. This review specifically and comprehensively highlights the use of porphyrins as molecular components and discusses their potential use for the construction of future devices. Throughout the review, the features provided by porphyrins, such as low level misalignments and very low attenuation factors, are shown with numerous examples, illustrating the potential and limitations of these molecular junctions, as well as differences emerging from applied integration/investigation techniques.

Single-Molecule Junctions with Highly Improved Stability

Single-molecule junctions (SMJs) have been fabricated using layers generated by diazonium electroreduction. This process creates a C-Au covalent bond between the molecule and the electrode. Rigid oligomers of variable length, based on porphyrin derivatives in their free base or cobalt complex forms, have been grafted on the surface. The conductance of the oligomers has been studied by a scanning tunneling microscopy break junction (STM-bj) technique and G(t) measurements, and the lifetime of the SMJs has been investigated. The conductance histograms indicate that charge transport in the porphyrins is relatively efficient and influenced by the presence of the cobalt center. With both systems, random telegraph G(t) signals are easily recorded, showing SMJ on/off states. The SMJs then stabilize and exhibit a surprisingly long lifetime around 10 s, and attenuation plots, obtained by both G(t) and STM-bj measurements, give identical values. This work shows that highly stable SMJs can be prepared using a diazonium grafting approach.

Electrochemical Potential-Driven High-Throughput Molecular Electronic and Spintronic Devices: From Molecules to Applications

Molecules are fascinating candidates for constructing tunable and electrically conducting devices by the assembly of either a single molecule or an ensemble of molecules between two electrical contacts followed by current-voltage (I-V) analysis, which is often termed "molecular electronics". Recently, there has been also an upsurge of interest in spin-based electronics or spintronics across the molecules, which offer additional scope to create ultrafast responsive devices with less power consumption and lower heat generation using the intrinsic spin property rather than electronic charge. Researchers have been exploring this idea of utilizing organic molecules, organometallics, coordination complexes, polymers, and biomolecules (proteins, enzymes, oligopeptides, DNA) in integrating molecular electronics and spintronics devices. Although several methods exist to prepare molecular thin-films on suitable electrodes, the electrochemical potential-driven technique has emerged as highly efficient. In this Review we describe recent advances in the electrochemical potential driven growth of nanometric various molecular films on technologically relevant substrates, including non-magnetic and magnetic electrodes to investigate the stimuli-responsive charge and spin transport phenomena.

High-yield parallel fabrication of quantum-dot monolayer single-electron devices displaying Coulomb staircase, contacted by graphene

It is challenging for conventional top-down lithography to fabricate reproducible devices very close to atomic dimensions, whereas identical molecules and very similar nanoparticles can be made bottom-up in large quantities, and can be self-assembled on surfaces. The challenge is to fabricate electrical contacts to many such small objects at the same time, so that nanocrystals and molecules can be incorporated into conventional integrated circuits. Here, we report a scalable method for contacting a self-assembled monolayer of nanoparticles with a single layer of graphene. This produces single-electron effects, in the form of a Coulomb staircase, with a yield of 87 ± 13% in device areas ranging from < 800 nm² to 16 μm², containing up to 650,000 nanoparticles. Our technique offers scalable assembly of ultra-high densities of functional particles or molecules that could be used in electronic integrated circuits, as memories, switches, sensors or thermoelectric generators.

The integration of nano-molecules into microelectronic circuitry is challenging. Here, the authors provide a scalable method for contacting a self-assembled monolayer of nanoparticles with a single layer of graphene that produces single-electron effects, in the form of a Coulomb staircase, with a yield of at least 70%.

Stabilization of an Enantiopure Sub-monolayer of Helicene Radical Cations on a Au(111) Surface through Noncovalent Interactions

In the past few years, the chirality and magnetism of molecules have received notable interest for the development of novel molecular devices. Chiral helicenes combine both these properties, and thus their nanostructuration is the first step toward developing new multifunctional devices. Here, we present a novel strategy to deposit a sub‐monolayer of enantiopure thia[4]helicene radical cations on a pre‐functionalized Au(111) substrate. This approach results in both the paramagnetic character and the chemical structure of these molecules being maintained at the nanoscale, as demonstrated by in‐house characterizations. Furthermore, synchrotron‐based X‐ray natural circular dichroism confirmed that the handedness of the thia[4]helicene is preserved on the surface.

Edge-Trimmed Nanogaps in 2D Materials for Robust, Scalable, and Tunable Lateral Tunnel Junctions

Lateral tunnel junctions are fundamental building blocks for molecular electronics and novel sensors, but current fabrication approaches achieve device yields below 10%, which limits their appeal for circuit integration and large-scale application. We here demonstrate a new approach to reliably form nanometer-sized gaps between electrodes with high precision and unprecedented control. This advance in nanogap production is enabled by the unique properties of 2D materials-based contacts. The large difference in reactivity of 2D materials' edges compared to their basal plane results in a sequential removal of atoms from the contact perimeter. The resulting trimming of exposed graphene edges in a remote hydrogen plasma proceeds at speeds of less than 1 nm per minute, permitting accurate control of the nanogap dimension through the etching process. Carrier transport measurements reveal the high quality of the nanogap, thus-produced tunnel junctions with a 97% yield rate, which represents a tenfold increase in productivity compared to previous reports. Moreover, 70% of tunnel junctions fall within a nanogap range of only 0.5 nm, representing an unprecedented uniformity in dimension. The presented edge-trimming approach enables the conformal narrowing of gaps and produces novel one-dimensional nano-trench geometries that can sustain larger tunneling currents than conventional 0D nano-junctions. Finally, the potential of our approach for future electronics was demonstrated by the realization of an atom-based memory.

Polymerization of silanes through dehydrogenative Si-Si bond formation on metal surfaces

Element-element double bonds of group 14 elements can be formed in solution, but generally only by applying harsh reductive conditions using sterically highly shielded tetryl halides as precursors. The two-dimensional confinement in surface-assisted polymerization represents a valuable alternative to access such reactive compounds, as it allows shielding of the labile entities without requiring bulky residues and catalytic activation of the reactive groups. Here, we demonstrate Si-Si bond formation in on-surface chemistry. Polymerization upon multiple Si-H bond dissociation and subsequent Si-Si bond formation was achieved on Au(111) and Cu(111) surfaces by using two different monomers, each containing two silicon functional groups (CH₃SiH₂ or SiH₃) attached to an aromatic backbone, leading to polymeric disilenes that interact with the surface. A combination of experimental and theoretical studies corroborates the formation of covalent Si-Si bonds between the long, highly ordered polymer chains with high diastereoselectivity. The reactive Si=Si bonds formally generated via double dehydrogenative coupling are stabilized via covalent Si-surface interaction.

Bipolar Resistive Switching in Junctions of Gallium Oxide and p-type Silicon

In this work, native GaO_x is positioned between bulk gallium and degenerately doped p-type silicon (p⁺-Si) to form Ga/GaO_x/SiO_x/p⁺-Si junctions. These junctions show memristive behavior, exhibiting large current-voltage hysteresis. When cycled between -2.5 and 2.5 V, an abrupt insulator-metal transition is observed that is reversible when the polarity is reversed. The ON/OFF ratio between the high and low resistive states in these junctions can reach values on the order of 10⁸ and retain the ON and OFF resistive states for up to 10⁵ s with an endurance exceeding 100 cycles. The presence of a nanoscale layer of gallium oxide is critical to achieving reversible resistive switching by formation and dissolution of the gallium filament across the switching layer.

Achieving Ultralow, Zero, and Inverted Tunneling Attenuation Coefficients in Molecular Wires with Extended Conjugation

Molecular tunnel junctions are organic devices miniaturized to the molecular scale. They serve as a versatile toolbox that can systematically examine charge transport behaviors at the atomic level. The electrical conductance of the molecular wire that bridges the two electrodes in a junction is significantly influenced by its chemical structure, and an intrinsically poor conductance is a major barrier for practical applications toward integrating individual molecules into electronic circuitry. Therefore, highly conjugated molecular wires are attractive as active components for the next-generation electronic devices, owing to the narrow highest occupied molecular orbital-lowest occupied molecular orbital gaps provided by their extended π-building blocks. This article aims to highlight the significance of highly conductive molecular wires in molecular electronics, the structures of which are inspired from conductive organic polymers, and presents a body of discussion on molecular wires exhibiting ultralow, zero, or inverted attenuation of tunneling probability at different lengths, along with future directions.

Evaluation of Carbon Based Molecular Junctions as Practical Photosensors

Molecular junctions with partially transparent top contacts permit monitoring photocurrents as probes of transport mechanism and potentially could act as photosensors with characteristics determined by the molecular layer inside the device. Previously reported molecular junctions containing nitroazobenzene (NAB) oligomers and oligomers of two different aromatic molecules in bilayers were evaluated for sensitivity, dark signal, responsivity, and limits of detection, in order to determine the device parameters which have the largest effects on photodetection performance. The long-range transport of photogenerated charge carriers permits the use of molecular layers thick enough to absorb a large fraction of the light incident on the layer. Thick layers also reduce the dark current and its associated noise, thus improving the limit of detection to a few nanowatts on a detector area of 0.00125 cm². Since the photocurrents have much lower activation energy than dark currents do, lowering the detector temperature significantly improves the limit of detection, although the present experiments were limited by environmental and instrumentation noise rather than detector noise. The highest specific detectivity (D*) for the current molecular devices was 3 × 10⁷ cm s^1/2 /W (∼10⁹, if only shot noise is considered) at 407 nm in a carbon/NAB/carbon junction with a molecular layer thickness of 28 nm. Although this is in the low end of the 10⁶-10¹² range for commonly used photodetectors, improvements in device design based on the current results should increase D* by 3-4 orders of magnitude, while preserving the wavelength selectivity and tunability associated with molecular absorbers. In addition, operation outside the 300-1000 nm range of silicon detectors and very low dark currents may be possible with molecular junctions.

On the Spin-State Dependence of Redox Potentials of Spin Crossover Complexes

Resistance switching properties of nanoscale junctions of spin crossover molecules have received recently much interest. In many cases, this property has been traced back to the variation of molecular orbital energies upon spin transition. However, one can also expect a substantial reorganization of the molecular structure due to charge localization, which calls for a better understanding of the relationship between the redox potential and the spin state of the molecule. To investigate this issue, we carried out a detailed density functional theory and variable temperature cyclic voltammetry investigation of the benchmark compound [Fe(HB(1,2,4-triazol-1-yl)₃)₂] in solution. We show that, for a correct thermodynamical picture, it is necessary to take into account the charge transfer-induced electronic and structural reorganization as well as spin equilibria in the oxidized and reduced species.

Photoswitching Molecular Junctions: Platforms and Electrical Properties

Remarkable advances in technology have enabled the manipulation of individual molecules and the creation of molecular electronic devices utilizing single and ensemble molecules. Maturing the field of molecular electronics has led to the development of functional molecular devices, especially photoswitching or photochromic molecular junctions, which switch electronic properties under external light irradiation. This review introduces and summarizes the platforms for investigating the charge transport in single and ensemble photoswitching molecular junctions as well as the electronic properties of diverse photoswitching molecules such as diarylethene, azobenzene, dihydropyrene, and spiropyran. Furthermore, the article discusses the remaining challenges and the direction for moving forward in this area for future photoswitching molecular devices.

Site-Dependent Spin Delocalization and Evidence of Ferrimagnetism in Atomically Precise Au25(SR)180 Clusters as Seen by Solution 13C NMR Spectroscopy

We report a simple but detailed solution ¹³C nuclear magnetic resonance spectroscopic study of atomically precise neutral Au₂₅(SR)₁₈⁰ (SR = alkyl thiolate) clusters. The paramagnetic ¹³C Knight shift of alkyl chain carbons, which is proportional to the local electron spin density, exhibits an electron spin delocalization that exponentially decays along the alkyl chain. The magnitude and decay constant of the observed electron spin delocalization, although largely independent of alkyl chain length, depend on where, that is, "in" versus "out" (vide infra) position, the alkyl chain is bound, in agreement with density functional theory calculations. Notably, the determined position-dependent decay constants, 1.70/Å and 0.41/Å for "in" and "out" ligands, respectively, not only could have important ramifications in molecular spintronics but are also comparable to measured decay constants in molecular electrical conductance of alkyl chains, potentially offering an alternative, simple method for estimating the latter. Moreover, the negative intercept temperatures of linear fits of reciprocal ¹³C (as well its bound ¹H) Knight shift versus temperature strongly suggest the existence of local ferrimagnetism in individual Au₂₅(SR)₁₈⁰ clusters.

Nanofabrication Techniques in Large-Area Molecular Electronic Devices

The societal impact of the electronics industry is enormous—not to mention how this industry impinges on the global economy. The foreseen limits of the current technology—technical, economic, and sustainability issues—open the door to the search for successor technologies. In this context, molecular electronics has emerged as a promising candidate that, at least in the short-term, will not likely replace our silicon-based electronics, but improve its performance through a nascent hybrid technology. Such technology will take advantage of both the small dimensions of the molecules and new functionalities resulting from the quantum effects that govern the properties at the molecular scale. An optimization of interface engineering and integration of molecules to form densely integrated individually addressable arrays of molecules are two crucial aspects in the molecular electronics field. These challenges should be met to establish the bridge between organic functional materials and hard electronics required for the incorporation of such hybrid technology in the market. In this review, the most advanced methods for fabricating large-area molecular electronic devices are presented, highlighting their advantages and limitations. Special emphasis is focused on bottom-up methodologies for the fabrication of well-ordered and tightly-packed monolayers onto the bottom electrode, followed by a description of the top-contact deposition methods so far used.

Systematic Modulation of Charge Transport in Molecular Devices through Facile Control of Molecule-Electrode Coupling Using a Double Self-Assembled Monolayer Nanowire Junction

We report a novel solid-state molecular device structure based on double self-assembled monolayers (D-SAM) incorporated into the suspended nanowire architecture to form a "Au|SAM-1||SAM-2|Au" junction. Using commercially available thiol molecules that are devoid of synthetic difficulty, we constructed a "Au|S-(CH2)6-ferrocene||SAM-2|Au" junction with various lengths and chemical structures of SAM-2 to tune the coupling between the ferrocene conductive molecular orbital and electrode of the junction. Combining low noise and a wide temperature range measurement, we demonstrated systematically modulated conduction depending on the length and chemical nature of SAM-2. Meanwhile, the transport mechanism transition from tunneling to hopping and the intermediate state accompanied by the current fluctuation due to the coexistence of the hopping and tunneling transport channels were observed. Considering the versatility of this solid-state D-SAM in modulating the electrode-molecule interface and electroactive groups, this strategy thus provides a novel facile strategy for tailorable nanoscale charge transport studies and functional molecular devices.

Electron Tunneling through Boron Nitride Confirms Marcus-Hush Theory Predictions for Ultramicroelectrodes

Marcus-Hush theory of electron transfer is one of the pillars of modern electrochemistry with a large body of supporting experimental evidence presented to date. However, some predictions, such as the electrochemical behavior at disk ultramicroelectrodes, remain unverified. Herein, we present a study of electron tunneling across a hexagonal boron nitride acting as a barrier between a graphite electrode and redox mediators in a liquid solution. This was achieved by the fabrication of disk ultramicroelectrodes with a typical diameter of 5 μm. Analysis of voltammetric measurements, using two common outer-sphere redox mediators, yielded several electrochemical parameters, including the electron transfer rate constant, limiting current, and transfer coefficient. They depart significantly from the Butler-Volmer kinetics and instead show behavior previously predicted by the Marcus-Hush theory of electron transfer. In addition, our system provides a noteworthy experimental platform, which could be applied to address a number of scientific problems such as identification of reaction mechanisms, surface modification, or long-range electron transfer.

Electrochemical modification of platinum and glassy carbon surfaces with pyridine layers and their use as complexing agents for copper (II) ions

The electrochemical grafting of the “in-situ” prepared diazopyridinium salt have permitted the attachment of pyridine moieties onto platinum and glassy carbon surfaces. The modification of the electrode surfaces is observed by a redox probe. The ability of the film for the complexation of copper (II) ions is demonstrated by square wave voltammetry. After 45 min accumulation of copper (II) ions onto the grafted electrode surfaces, the electrode signal obtained by square wave voltammetry measurement served to discriminate the adsorbed heavy metal ions. Such measurements showed that the grafted pyridine has the ability to display complexing behavior toward some heavy metal ions. DFT calculations support a strong binding of the pyridine moieties onto the Pt surface. The most favorable complexation mode of copper (II) ions as suggested from DFT is the bidentate complex. This strategy is vital in constructing a wide range of different electrochemical sensors.

Metal-Single-Molecule-Semiconductor Junctions Formed by a Radical Reaction Bridging Gold and Silicon Electrodes

Here we report molecular films terminated with diazonium salts moieties at both ends which enables single-molecule contacts between gold and silicon electrodes at open circuit via a radical reaction. We show that the kinetics of film grafting is crystal-facet dependent, being more favorable on ⟨111⟩ than on ⟨100⟩, a finding that adds control over surface chemistry during the device fabrication. The impact of this spontaneous chemistry in single-molecule electronics is demonstrated using STM-break junction approaches by forming metal-single-molecule-semiconductor junctions between silicon and gold source and drain, electrodes. Au-C and Si-C molecule-electrode contacts result in single-molecule wires that are mechanically stable, with an average lifetime at room temperature of 1.1 s, which is 30-400% higher than that reported for conventional molecular junctions formed between gold electrodes using thiol and amine contact groups. The high stability enabled measuring current-voltage properties during the lifetime of the molecular junction. We show that current rectification, which is intrinsic to metal-semiconductor junctions, can be controlled when a single-molecule bridges the gap in the junction. The system changes from being a current rectifier in the absence of a molecular bridge to an ohmic contact when a single molecule is covalently bonded to both silicon and gold electrodes. This study paves the way for the merging of the fields of single-molecule and silicon electronics.

Use of Selective Redox Cross-Inhibitors for the Control of Organic Layer Formation Obtained via Diazonium Salt Reduction

The controlled electrochemical deposition of a series of four diazonium salts (4-bromobenzene, 4-iodobenzene, 4-methoxybenzene, and 4-diethylaminobenzene diazonium) on carbon surfaces has been achieved by exploiting the use of three redox mediators: 2,2-diphenyl-1-picrylhydrazyl, chloranil, and dichlone. The efficiency of the method rests on a fast redox cross-reaction in the diffusion layer between the diazonium compound and the reduced form of the selected inhibitor, characterized by an outer-sphere electron transfer. The effect of the inhibitor addition in the deposition solution was characterized using electrochemical techniques, X-ray photoelectron spectroscopy, and atomic force microscopy. Near-monolayers are obtained when the potential of the redox mediator is at least 100 mV lower than the reduction potential of the diazonium salt concerned. A judicious choice of the redox entity can allow, via a fine control of the experimental conditions, to modulate the thickness of organic layers by varying the grafting potential.

Lateral scaling and positioning effects of top-gate electrodes on single-molecule field-effect transistors

Molecular electronics aims at integrating controllable molecular devices into circuits or machines to realize certain functions. According to device configuration, molecular field-effect transistors with top-gate electrodes have great advantages for integration. Nevertheless, from technical aspects, it is difficult to control lateral scale and position of a top-gate electrode precisely. Therefore, one problem arises in how lateral scaling and positioning effects of a top-gate electrode affect device performance. To solve this problem, the electronic transport properties of single-molecule field-effect transistor configurations modulated by a series of partial-scale top-gate electrodes with different lateral scales and positions are studied by using non-equilibrium Green's function in combination with density functional theory, and compared with those of the full gate electrode (can be considered as a bottom gate electrode). The results show that lateral scaling and positioning effects indeed have a great impact on electronic transport properties of single-molecule field-effect transistor configurations. For [Formula: see text]-saturated 1,12-dodecanedithiol devices, larger lateral scale of a partial-scale top-gate electrode obtains larger amplification coefficient [Formula: see text] (ratio of device conductances with/without a gate electrode), and even larger [Formula: see text] than that of the full gate electrode. While lateral positioning effect has little influence on this device. For [Formula: see text]-conjugated 1,3,5,7,9,11-dodehexaene-1,12-dithiol devices, performance of a partial-scale top-gate electrode mainly depends on locations of its two edges, i.e. the number of [Formula: see text] bonds that it breaks. These results will provide theoretical directions in device designing and manufacturing in the future.

Molecular Rectifiers on Silicon: High Performance by Enhancing Top-Electrode/Molecule Coupling

One of the simplest molecular-scale electronic devices is the molecular rectifier. In spite of considerable efforts aimed at understanding structure-property relationships in these systems, devices with predictable and stable electronic properties are yet to be developed. Here, we demonstrate highly efficient current rectification in a new class of compounds that form self-assembled monolayers on silicon. We achieve this by exploiting the coupling of the molecules with the top electrode which, in turn, controls the position of the relevant molecular orbitals. The molecules consist of a silane anchoring group and a nitrogen-substituted benzene ring, separated by a propyl group and imine linkage, and result from a simple, robust, and high-yield synthetic procedure. We find that when incorporated in molecular diodes, these compounds can rectify current by as much as 3 orders of magnitude, depending on their structure, with a maximum rectification ratio of 2635 being obtained in ( E)-1-(4-cyanophenyl)- N-(3-(triethoxysilyl) propyl)methanimine (average R_avg = 1683 ± 458, at an applied voltage of 2 V). This performance is on par with that of the best molecular rectifiers obtained on metallic electrodes, but it has the advantage of lower cost and more efficient integration with current silicon technologies. The development of molecular rectifiers on silicon may yield hybrid systems that can expand the use of silicon toward novel functionalities governed by the molecular species grafted onto its surface.

Long-Range Activationless Photostimulated Charge Transport in Symmetric Molecular Junctions

Molecular electronic junctions consisting of nitroazobenzene oligomers covalently bonded to a conducting carbon surface using an established "all-carbon" device design were illuminated with UV-vis light through a partially transparent top electrode. Monitoring junction conductance with a DC bias imposed permitted observation of photocurrents while varying the incident wavelength, light intensity, molecular layer thickness, and temperature. The photocurrent spectrum tracked the in situ absorption spectrum of nitroazobenzene, increased linearly with light intensity, and depended exponentially on applied bias. The electronic characteristics of the photocurrent differed dramatically from those of the same device in the dark, with orders of magnitude higher conductance and very weak attenuation with molecular layer thickness (β = 0.14 nm^-1 for thickness above 5 nm). The temperature dependence of the photocurrent was opposite that of the dark current, with a 35% decrease in conductance between 80 and 450 K, while the dark current increased by a factor of 4.5 over the same range. The photocurrent was similar to the dark current for thin molecular layers but greatly exceeded the dark current for low bias and thick molecular layers. We conclude that the light and dark mechanisms are additive, with photoexcited carriers transported without thermal activation for a thickness range of 5-10 nm. The inverse temperature dependence is likely due to scattering or recombination events, both of which increase with temperature and in turn decrease the photocurrent. Photostimulated resonant transport potentially widens the breadth of conceivable molecular electronic devices and may have immediate value for wavelength-specific photodetection.

Nanoscale Variable-Area Electronic Devices: Contact Mechanics and Hypersensitive Pressure Application

Nanomembranes (NMs) are freestanding structures with few-nanometer thickness and lateral dimensions up to the microscale. In nanoelectronics, NMs have been used to promote reliable electrical contacts with distinct nanomaterials, such as molecules, quantum dots, and nanowires, as well as to support the comprehension of the condensed matter down to the nanoscale. Here, we propose a tunable device architecture that is capable of deterministically changing both the contact geometry and the current injection in nanoscale electronic junctions. The device is based on a hybrid arrangement that joins metallic NMs and molecular ensembles, resulting in a versatile, mechanically compliant element. Such a feature allows the devices to accommodate a mechanical stimulus applied over the top electrodes, enlarging the junctions' active area without compromising the molecules. A model derived from the Hertzian mechanics is employed to correlate the contact dynamics with the electronic transport in these novel devices denominated as variable-area transport junctions (VATJs). As a proof of concept, we propose a direct application of the VATJs as compression gauges envisioning the development of hypersensitive pressure pixels. Regarding sensitivity (∼480 kPa^-1), the VATJ-based transducers constitute a breakthrough in nanoelectronics, with the prospect of carrying its sister-field of molecular electronics out of the laboratory via integrative, hybrid organic/inorganic nanotechnology.

The Rate of Charge Tunneling in EGaIn Junctions Is Not Sensitive to Halogen Substituents at the Self-Assembled Monolayer//Ga2O3 Interface

This paper describes experiments that are designed to test the influence of terminal groups incorporating carbon-halogen bonds on the current density (by hole tunneling) across self-assembled monolayer (SAM)-based junctions of the form M^TS/S(CH₂)₉NHCOCH _nX_{3- n}//Ga₂O₃/EGaIn (where M = Ag and Au and X = CH₃, F, Cl, Br, I). Within the limits of statistical significance, these rates of tunneling are insensitive to the nature of the terminal group at the interface between the SAM and the Ga₂O₃. The results are relevant to the origin of an apparent inconsistency in the literature concerning the influence of halogen atoms at the SAM//electrode interface on the tunneling current density.

The intramolecular hydrogen bond as a unit of molecular electronics: Molecular switching controlled by overcrowded intramolecular three-centered hydrogen bond

The equilibrium geometry of the 2,5-bis-[2-(pyridin-2-yl)-vinyl]-1[Formula: see text]-pyrrole calculated at the MP2/6-311[Formula: see text]G([Formula: see text],[Formula: see text]) level of theory evidences the breaking of one of the components in the three-centered intramolecular hydrogen bond due to the steric strain. For this reason, the three-centered intramolecular hydrogen bonding turns out to be asymmetric interaction involving the major and minor components. However, the reversible switching between these components under an external impact is also possible. Two different stable states with unequal geometric and electronic structure are observed in the derivatives of the 2,5-bis-[2-(pyridin-2-yl)-vinyl]-1[Formula: see text]-pyrrole. These molecules represent novel molecular switches operating due to the pendulum-like transition between the nonequivalent two-centered components of the overcrowded three-centered intramolecular hydrogen bond. Implantation of hydrogen bond as a unit of the molecular scale device enhances potential of molecular electronics and could serve as a step towards the construction of artificial biological ensembles.

Nanometric building blocks for robust multifunctional molecular junctions

Much of the motivation for developing molecular electronic devices is the prospect of achieving novel electronic functions by varying molecular structure. We describe a "building block" approach for molecular junctions resulting in one, two or three nanometer-thick molecular layers in a commercially proven junction design. A single layer of anthraquinone between carbon electrodes provides a tunnel device with applications in electronic music, and a second layer of a thiophene derivative yields a molecular rectifier with quite different audio characteristics. A third layer of lithium benzoate produces a redox-active device with possible applications in non-volatile memory devices or on-chip energy storage. The building block approach forms a basis for "rational design" of electronic functions, in which layers of varying structure produce distinct and desirable electronic behaviours.

Stable anchoring chemistry for room temperature charge transport through graphite-molecule contacts

An open challenge for single-molecule electronics is to find stable contacts at room temperature with a well-defined conductance. Common coinage metal electrodes pose fabrication and operational problems due to the high mobility of the surface atoms. We demonstrate how molecules covalently grafted onto mechanically robust graphite/graphene substrates overcome these limitations. To this aim, we explore the effect of the anchoring group chemistry on the charge transport properties of graphite-molecule contacts by means of the scanning tunneling microscopy break-junction technique and ab initio simulations. Molecules adsorbed on graphite only via van der Waals interactions have a conductance that decreases exponentially upon stretching the junctions, whereas the molecules bonded covalently to graphite have a single well-defined conductance and yield contacts of unprecedented stability at room temperature. Our results demonstrate a strong bias dependence of the single-molecule conductance, which varies over more than one order of magnitude even at low bias voltages, and show an opposite rectification behavior for covalent and noncovalent contacts. We demonstrate that this bias-dependent conductance and opposite rectification behavior is due to a novel effect caused by the nonconstant, highly dispersive density of states of graphite around the Fermi energy and that the direction of rectification is governed by the detailed nature of the molecule/graphite contact. Combined with the prospect of new functionalities due to a strongly bias-dependent conductance, these covalent contacts are ideal candidates for next-generation molecular electronic devices.

Structure Controlled Long-Range Sequential Tunneling in Carbon-Based Molecular Junctions

Carbon-based molecular junctions consisting of aromatic oligomers between conducting sp² hybridized carbon electrodes exhibit structure-dependent current densities (J) when the molecular layer thickness (d) exceeds ∼5 nm. All four of the molecular structures examined exhibit an unusual, nonlinear ln J vs bias voltage (V) dependence which is not expected for conventional coherent tunneling or activated hopping mechanisms. All molecules exhibit a weak temperature dependence, with J increasing typically by a factor of 2 over the range of 200-440 K. Fluorene and anthraquinone show linear plots of ln J vs d with nearly identical J values for the range d = 3-10 nm, despite significant differences in their free-molecule orbital energy levels. The observed current densities for anthraquinone, fluorene, nitroazobenzene, and bis-thienyl benzene for d = 7-10 nm show no correlation with occupied (HOMO) or unoccupied (LUMO) molecular orbital energies, contrary to expectations for transport mechanisms based on the offset between orbital energies and the electrode Fermi level. UV-vis absorption spectroscopy of molecular layers bonded to carbon electrodes revealed internal energy levels of the chemisorbed films and also indicated limited delocalization in the film interior. The observed current densities correlate well with the observed UV-vis absorption maxima for the molecular layers, implying a transport mechanism determined by the HOMO-LUMO energy gap. We conclude that transport in carbon-based aromatic molecular junctions is consistent with multistep tunneling through a barrier defined by the HOMO-LUMO gap, and not by charge transport at the electrode interfaces. In effect, interfacial "injection" at the molecule/electrode interfaces is not rate limiting due to relatively strong electronic coupling, and transport is controlled by the "bulk" properties of the molecular layer interior.

Bottom-Up Electrochemical Fabrication of Conjugated Ultrathin Layers with Tailored Switchable Properties

A bottom-up electrochemical process for fabricating conjugated ultrathin layers with tailored switchable properties is developed. Ultrathin layers of covalently grafted oligo(bisthienylbenzene) (oligo(BTB)) are used as switchable organic electrodes, and 3,4-ethylenedioxythiophene (EDOT) is oxidized on this layer. Adding only a few (less than 3) nanometers of EDOT moieties (5 to 6 units ) completely changes the switching properties of the layer without changing the surface concentration of the electroactive species. A range of new materials with tunable interfacial properties is created. They consist of oligo(BTB)-oligo(EDOT) diblock oligomers of various relative lengths covalently grafted onto the underlying electrode. These films retain reversible redox on/off switching and their switching potential can be finely tuned between +0.6 and -0.3 V/SCE while the overall thickness remains below 11 nm.