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Yu Y, Liu X, Li T, Zou X, Ding J, Xu N, Sahng X, Wang X, Huang P, Cheng C, Si S, Lu H, Zhang H, Li D. Optimization of the cavity length and pulse characterization based on germanene as a saturable absorber in an Er-doped fiber laser. APPLIED OPTICS 2023; 62:9156-9163. [PMID: 38108754 DOI: 10.1364/ao.504880] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/06/2023] [Accepted: 11/08/2023] [Indexed: 12/19/2023]
Abstract
In this study, germanene-nanosheets (NSs) were synthesized by liquid-phase exfoliation, followed by an experimental investigation into the nonlinear saturable absorption characteristics and morphological structure of germanene. The germanene-NSs were employed as saturable absorbers, exhibiting saturation intensity and modulation depth values of 22.64M W/c m 2 and 4.48%, respectively. This demonstrated the feasibility of utilizing germanene-NSs passively mode-locked in an erbium-doped fiber laser (EDFL). By optimizing the cavity length, improvements in the output of EDFL characteristics were achieved, resulting in 883 fs pulses with a maximum average output power of 19.74 mW. The aforementioned experimental outcomes underscore the significant potential of germanene in the realms of ultrafast photonics and nonlinear optics.
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Dai W, Zheng Y, Li B, Yang F, Chen W, Li Y, Deng Y, Bai D, Shu R. A 3D-printed orthopedic implant with dual-effect synergy based on MoS 2 and hydroxyapatite nanoparticles for tumor therapy and bone regeneration. Colloids Surf B Biointerfaces 2023; 228:113384. [PMID: 37320980 DOI: 10.1016/j.colsurfb.2023.113384] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/04/2023] [Revised: 05/15/2023] [Accepted: 05/26/2023] [Indexed: 06/17/2023]
Abstract
Treatments for malignant bone tumors are urgently needed to be developed due to the dilemma of precise resection of tumor tissue and subsequent bone defects. Although polyether-ether-ketone (PEEK) has widely attracted attention in the orthopedic field, its bioinertness and poor osteogenic properties significantly restrict its applications in bone tumor treatment. To tackle the daunting issue, we use a hydrothermal technique to fabricate novel PEEK scaffolds modified with molybdenum disulfide (MoS2) nanosheets and hydroxyapatite (HA) nanoparticles. Our dual-effect synergistic PEEK scaffolds exhibit perfect photothermal therapeutic (PTT) property dependent on molybdous ion (Mo2+) concentration and laser power density, superior to conventional PEEK scaffolds. Under near-infrared (NIR) irradiation, the viability of MG63 osteosarcoma cells is significantly reduced by modified PEEK scaffolds, indicating a tumor-killing potential in vitro. Furthermore, the incorporation of HA nanoparticles on the surface of PEEK bolsters proliferation and adherence of MC3T3-E1 cells, boosting mineralization for further bone defect repair. The results of micro-computed tomography (micro-CT) and histological analysis of 4-week treated rat femora demonstrate the preeminent photothermal and osteogenesis capacity of 3D-printed modified scaffolds in vivo. In conclusion, the dual-effect synergistic orthopedic implant with photothermal anticancer property and osteogenic induction activity strikes a balance between tumor treatment and bone development promotion, offering a promising future therapeutic option.
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Affiliation(s)
- Wenyu Dai
- State Key Laboratory of Oral Diseases & National Clinical Research Center for Oral Diseases, Department of Orthodontics and Paediatric Dentistry, West China Hospital of Stomatology, School of Chemical Engineering, Sichuan University, Chengdu 610041, China
| | - Yunfei Zheng
- Department of Orthodontics, National Center of Stomatology; National Clinical Research Center for Oral Diseases, National Engineering Laboratory for Digital and Material Technology of Stomatology, Peking University School and Hospital of Stomatology, Beijing 100081, China
| | - Bin Li
- State Key Laboratory of Oral Diseases & National Clinical Research Center for Oral Diseases, Department of Orthodontics and Paediatric Dentistry, West China Hospital of Stomatology, School of Chemical Engineering, Sichuan University, Chengdu 610041, China
| | - Fan Yang
- State Key Laboratory of Oral Diseases & National Clinical Research Center for Oral Diseases, Department of Orthodontics and Paediatric Dentistry, West China Hospital of Stomatology, School of Chemical Engineering, Sichuan University, Chengdu 610041, China
| | - Wanxi Chen
- State Key Laboratory of Oral Diseases & National Clinical Research Center for Oral Diseases, Department of Orthodontics and Paediatric Dentistry, West China Hospital of Stomatology, School of Chemical Engineering, Sichuan University, Chengdu 610041, China
| | - Yunfei Li
- Department of Biomedical Engineering, The City College of the City University of New York, New York, United States
| | - Yi Deng
- State Key Laboratory of Oral Diseases & National Clinical Research Center for Oral Diseases, Department of Orthodontics and Paediatric Dentistry, West China Hospital of Stomatology, School of Chemical Engineering, Sichuan University, Chengdu 610041, China; State Key Laboratory of Polymer Materials Engineering, Sichuan University, Chengdu 610065, China; Department of Mechanical Engineering, The University of Hong Kong, Hong Kong 999077, China
| | - Ding Bai
- State Key Laboratory of Oral Diseases & National Clinical Research Center for Oral Diseases, Department of Orthodontics and Paediatric Dentistry, West China Hospital of Stomatology, School of Chemical Engineering, Sichuan University, Chengdu 610041, China.
| | - Rui Shu
- State Key Laboratory of Oral Diseases & National Clinical Research Center for Oral Diseases, Department of Orthodontics and Paediatric Dentistry, West China Hospital of Stomatology, School of Chemical Engineering, Sichuan University, Chengdu 610041, China.
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Sangolkar AA, Pooja, Pawar R. Structure, stability, and electronic and optical properties of TMDC-coinage metal composites: vertical atomically thin self-assembly of Au clusters. Phys Chem Chem Phys 2023; 25:4177-4192. [PMID: 36655755 DOI: 10.1039/d2cp04000j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/06/2023]
Abstract
Composites of metal clusters supported on transition metal dichalcogenides (TMDCs) often provide promising opportunities for applications in nanoelectronics, catalysis, sensing, etc. In the present investigation, a systematic attempt has been made to unveil the structure and stability of coinage M6 clusters supported on TMDC (MoS2 and WS2) monolayers. The more prominent objective is to explore potential candidates that stabilize the two-dimensional (2D) M6 clusters on their surface. Periodic energy decomposition analysis (pEDA) was carried out to probe the various interaction energy (IE) components that govern the stability of the M6 clusters in the composites. Attention has also been devoted to unravelling the electronic and optical properties of these TMDCs/M6 composites. Moreover, ab initio molecular dynamics (AIMD) simulations were performed to scrutinize the dynamic behaviour of Au cluster on WS2 monolayer. The results reveal that the coinage M6 clusters form energetically more stable composites on MoS2 than WS2 monolayer. It is worth mentioning that WS2 promotes the stability of 2D M6 clusters. Inclusion of dispersion correction marginally altered the geometries of the TMDCs/M6 composites but its impact on the IE values was significant. AIMD simulation explicitly emphasizes that the WS2 surface preferentially facilitates the vertical 2D self-assembling of Au atoms and, interestingly, the planarity is mostly retained during the course of simulations. The adsorption of coinage M6 clusters substantially influences the electronic and optical properties of the TMDCs. HSE06 calculation confirms that the decrease in energy gap is more pronounced in MoS2/M6 composites. The outcomes of this study render fundamental insights into the various TMDCs/M6 composites that would certainly be worthwhile probing for diverse practical applications.
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Affiliation(s)
- Akanksha Ashok Sangolkar
- Laboratory of Advanced Computation and Theory for Materials and Chemistry, Department of Chemistry, National Institute of Technology Warangal (NITW), Warangal, Telangana-506004, India.
| | - Pooja
- Laboratory of Advanced Computation and Theory for Materials and Chemistry, Department of Chemistry, National Institute of Technology Warangal (NITW), Warangal, Telangana-506004, India.
| | - Ravinder Pawar
- Laboratory of Advanced Computation and Theory for Materials and Chemistry, Department of Chemistry, National Institute of Technology Warangal (NITW), Warangal, Telangana-506004, India.
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Wang X, Yao CB, Wang LY, Wang ZM, Jiang CH, Liu XJ. Hydrothermal synthesis and controlled growth of group-VIB W metal compound nanostructures from tungsten oxide to tungsten disulphide. NANOSCALE 2022; 14:14670-14682. [PMID: 36165101 DOI: 10.1039/d2nr03786f] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Two-dimensional lateral group-VIB transition metal dichalcogenides (TMDs) have attracted much attention in the fast evolving field of advanced photoelectric functional materials, but their controllable fabrication is challenging. Herein, an emerging synthetic route for sulfurization of tungsten oxide was developed. During the hydrothermal reaction, the optimization of the precursor selection and synthesis parameters led to the tunable properties of WO3-WSxOy-WS2 nanostructures. The vulcanization was thermodynamically favorably at low temperatures and in an environment with a sufficient S source, wherein WO3 was reduced by H atoms to WO3-x, and S atoms were preferentially adsorbed on O vacancies. The WSxOy nanostructures have a narrow band-gap attributed to the effect of S on the valence band top and electronic density of states by density functional theory. The photocurrent response and charge transfer properties of WSxOy were improved due to the charge transport between WS2 and WO3. Understanding the formation and transformation of WS2 nanostructures in solution contributes to the discovery of the important structure-efficiency relationship, which may be extended to other TMDs systems. Hence, extensive research efforts are still needed to develop safer and more efficient synthesis and modification methods to fully utilize the distinctive advantageous properties of TMDs in the photoelectric field.
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Affiliation(s)
- Xue Wang
- Key Laboratory of Photonic and electric Bandgap materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin, 150025, Heilongjiang Province, China.
| | - Cheng-Bao Yao
- Key Laboratory of Photonic and electric Bandgap materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin, 150025, Heilongjiang Province, China.
| | - Li-Yuan Wang
- Key Laboratory of Photonic and electric Bandgap materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin, 150025, Heilongjiang Province, China.
| | - Ze-Miao Wang
- Key Laboratory of Photonic and electric Bandgap materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin, 150025, Heilongjiang Province, China.
| | - Cai-Hong Jiang
- Key Laboratory of Photonic and electric Bandgap materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin, 150025, Heilongjiang Province, China.
| | - Xiao-Jie Liu
- Key Laboratory of Photonic and electric Bandgap materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin, 150025, Heilongjiang Province, China.
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Abhijith T, E S, Suthar R, Sharma P, Thomas S, Karak S. Understanding the linear and nonlinear optical responses of few-layer exfoliated MoS 2and WS 2nanoflakes: experimental and simulation studies. NANOTECHNOLOGY 2022; 33:435702. [PMID: 35850090 DOI: 10.1088/1361-6528/ac81d7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/20/2022] [Accepted: 07/17/2022] [Indexed: 06/15/2023]
Abstract
Understanding the linear and nonlinear optical (NLO) responses of two-dimensional nanomaterials is essential to effectively utilize them in various optoelectronic applications. Here, few-layer MoS2and WS2nanoflakes with lateral size less than 200 nm were prepared by liquid-phase exfoliation, and their linear and NLO responses were studied simultaneously using experimental measurements and theoretical simulations. Finite-difference time-domain (FDTD) simulations confirmed the redshift in the excitonic transitions when the thickness was increased above 10 nm indicating the layer-number dependent bandgap of nanoflakes. WS2nanoflakes exhibited around 5 times higher absorption to scattering cross-section ratio than MoS2nanoflakes at various wavelengths. Open aperture Z scan analysis of both the MoS2and WS2nanoflakes using 532 nm nanosecond laser pulses reveals strong nonlinear absorption activity with effective nonlinear absorption coefficient (βeff) of 120 cm GW-1and 180 cm GW-1, respectively, which was attributed to the combined contributions of ground, singlet excited and triplet excited state absorption. FDTD simulation results also showed the signature of strong absorption density of few layer nanoflakes which may be account for their excellent NLO characteristics. Optical limiting threshold values of MoS2and WS2nanoflakes were obtained as ∼1.96 J cm-2and 0.88 J cm-2, respectively, which are better than many of the reported values. Intensity dependent switching from saturable absorption (SA) to reverse SA was also observed for MoS2nanoflakes when the laser intensity increased from 0.14 to 0.27 GW cm-2. The present study provides valuable information to improve the selection of two-dimensional nanomaterials for the design of highly efficient linear and nonlinear optoelectronic devices.
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Affiliation(s)
- T Abhijith
- Organic and Hybrid Electronic Device Laboratory, Department of Energy Science and Engineering, Indian Institute of Technology Delhi, New Delhi 110016, India
| | - Shiju E
- International School of Photonics, Cochin University of Science and Technology, Cochin 682022, Kerala, India
| | - Rakesh Suthar
- Organic and Hybrid Electronic Device Laboratory, Department of Energy Science and Engineering, Indian Institute of Technology Delhi, New Delhi 110016, India
| | - Punit Sharma
- Organic and Hybrid Electronic Device Laboratory, Department of Energy Science and Engineering, Indian Institute of Technology Delhi, New Delhi 110016, India
| | - Sheenu Thomas
- International School of Photonics, Cochin University of Science and Technology, Cochin 682022, Kerala, India
| | - Supravat Karak
- Organic and Hybrid Electronic Device Laboratory, Department of Energy Science and Engineering, Indian Institute of Technology Delhi, New Delhi 110016, India
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Liu F, Shi J, Xu J, Han N, Cheng Y, Huang W. Site-selective growth of two-dimensional materials: strategies and applications. NANOSCALE 2022; 14:9946-9962. [PMID: 35802071 DOI: 10.1039/d2nr02093a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Over the years, there have been major advances in two-dimensional (2D) materials on account of their excellent and unique properties. Among the various strategies for 2D material fabrication, chemical vapor deposition (CVD) is considered as the most promising method to achieve large-area and high-quality 2D film growth. Furthermore, to realize the potential applications of 2D materials in different fields, the integration of 2D materials into functional devices is essential. However, the materials made by common CVD are randomly distributed on substrates, which is disadvantageous for fabricating arrays of devices. To solve this problem, a site-selective growth method was developed to meet the requirement of batch production for practical applications because it achieves control over the locations of products and benefits the subsequent direct integration. Herein, state-of-the-art methods for site-selective synthesis, including seeded growth and patterned growth, are reviewed. Then, the electronic and optoelectronic applications of the as-grown 2D materials are also reviewed. Finally, the remaining challenges and future prospects regarding site-selective methods and applications are discussed.
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Affiliation(s)
- Fan Liu
- Frontiers Science Center for Flexible Electronics (FSCFE), Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering (IBME), Northwestern Polytechnical University, Xi'an 710072, China.
| | - Jian Shi
- Frontiers Science Center for Flexible Electronics (FSCFE), Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering (IBME), Northwestern Polytechnical University, Xi'an 710072, China.
| | - Jinpeng Xu
- Frontiers Science Center for Flexible Electronics (FSCFE), Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering (IBME), Northwestern Polytechnical University, Xi'an 710072, China.
| | - Nannan Han
- Frontiers Science Center for Flexible Electronics (FSCFE), Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering (IBME), Northwestern Polytechnical University, Xi'an 710072, China.
| | - Yingchun Cheng
- Frontiers Science Center for Flexible Electronics (FSCFE), Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering (IBME), Northwestern Polytechnical University, Xi'an 710072, China.
- Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing 211816, China
| | - Wei Huang
- Frontiers Science Center for Flexible Electronics (FSCFE), Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering (IBME), Northwestern Polytechnical University, Xi'an 710072, China.
- Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing 211816, China
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SLM-processed MoS 2/Mo 2S 3 nanocomposite for energy conversion/storage applications. Sci Rep 2022; 12:5030. [PMID: 35322135 PMCID: PMC8943036 DOI: 10.1038/s41598-022-08921-7] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/02/2022] [Accepted: 03/15/2022] [Indexed: 11/23/2022] Open
Abstract
MoS2-based nanocomposites have been widely processed by a variety of conventional and 3D printing techniques. In this study, selective laser melting (SLM) has for the first time successfully been employed to tune the crystallographic structure of bulk MoS2 to a 2H/1T phase and to distribute Mo2S3 nanoparticles in-situ in MoS2/Mo2S3 nanocomposites used in electrochemical energy conversion/storage systems (EECSS). The remarkable results promote further research on and elucidate the applicability of laser-based powder bed processing of 2D nanomaterials for a wide range of functional structures within, e.g., EECSS, aerospace, and possibly high-temperature solid-state EECSS even in space.
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Hu Y, Liang J, Xia Y, Zhao C, Jiang M, Ma J, Tie Z, Jin Z. 2D Arsenene and Arsenic Materials: Fundamental Properties, Preparation, and Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2104556. [PMID: 34846791 DOI: 10.1002/smll.202104556] [Citation(s) in RCA: 14] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/31/2021] [Revised: 10/06/2021] [Indexed: 06/13/2023]
Abstract
As emerging 2D materials, arsenene and arsenic materials have attracted rising interest in the past few years. The diverse crystalline phases, exotic electrical characteristics, and widespread applications of 2D arsenene and arsenic bring them great research value and utilization potential. Herein, the recent progress of 2D arsenene and arsenic is reviewed in terms of fundamental properties, preparation, and applications. The fundamental properties of 2D arsenene and arsenic, including the crystal phases, environmental stability, and electrical structure, from theoretical to experimental reports are first summarized. Then, the experimental processes for preparing 2D arsenene and arsenic, along with their respective advantages and disadvantages, are introduced including epitaxial growth, mechanical exfoliation, and liquid-phase exfoliation. Moreover, applications of 2D arsenene and arsenic are discussed, suggesting a wide range of applications of 2D arsenene and arsenic in field-effect transistors, sensors, catalysts, biological applications, and so on. Finally, some perspectives about the challenges and opportunities of promising 2D arsenene and arsenic are provided. This review provides a helpful guidance and stimulates more focus on future explorations and developments of 2D arsenene and arsenic.
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Affiliation(s)
- Yi Hu
- MOE Key Laboratory of Mesoscopic Chemistry, MOE Key Laboratory of High Performance Polymer Materials and Technology, Jiangsu Key Laboratory of Advanced Organic Materials, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, 210023, China
- Shenzhen Research Institute of Nanjing University, Shenzhen, 518063, China
| | - Junchuan Liang
- MOE Key Laboratory of Mesoscopic Chemistry, MOE Key Laboratory of High Performance Polymer Materials and Technology, Jiangsu Key Laboratory of Advanced Organic Materials, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, 210023, China
- Shenzhen Research Institute of Nanjing University, Shenzhen, 518063, China
| | - Yuren Xia
- MOE Key Laboratory of Mesoscopic Chemistry, MOE Key Laboratory of High Performance Polymer Materials and Technology, Jiangsu Key Laboratory of Advanced Organic Materials, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, 210023, China
- Shenzhen Research Institute of Nanjing University, Shenzhen, 518063, China
| | - Cheng Zhao
- MOE Key Laboratory of Mesoscopic Chemistry, MOE Key Laboratory of High Performance Polymer Materials and Technology, Jiangsu Key Laboratory of Advanced Organic Materials, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, 210023, China
- Shenzhen Research Institute of Nanjing University, Shenzhen, 518063, China
| | - Minghang Jiang
- MOE Key Laboratory of Mesoscopic Chemistry, MOE Key Laboratory of High Performance Polymer Materials and Technology, Jiangsu Key Laboratory of Advanced Organic Materials, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, 210023, China
- Shenzhen Research Institute of Nanjing University, Shenzhen, 518063, China
| | - Jing Ma
- MOE Key Laboratory of Mesoscopic Chemistry, MOE Key Laboratory of High Performance Polymer Materials and Technology, Jiangsu Key Laboratory of Advanced Organic Materials, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, 210023, China
| | - Zuoxiu Tie
- MOE Key Laboratory of Mesoscopic Chemistry, MOE Key Laboratory of High Performance Polymer Materials and Technology, Jiangsu Key Laboratory of Advanced Organic Materials, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, 210023, China
- Shenzhen Research Institute of Nanjing University, Shenzhen, 518063, China
| | - Zhong Jin
- MOE Key Laboratory of Mesoscopic Chemistry, MOE Key Laboratory of High Performance Polymer Materials and Technology, Jiangsu Key Laboratory of Advanced Organic Materials, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing, 210023, China
- Shenzhen Research Institute of Nanjing University, Shenzhen, 518063, China
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Liu X, Liu DY, Li TT, Chen DM, Zou LJ. Investigation on the interlayer coupling and bonding in layered nitride-halides ThNF and ThNCl. RSC Adv 2021; 11:28698-28703. [PMID: 35478555 PMCID: PMC9038138 DOI: 10.1039/d1ra05578j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/21/2021] [Accepted: 08/17/2021] [Indexed: 11/26/2022] Open
Abstract
Motivated by recent experimental observation [N. Z. Wang, et al., Inorg. Chem., 2019, 58, 9897], we investigated the electronic properties and chemical bonding in layered nitride-halide compounds ThNF and ThNCl using first-principles calculations to illustrate the interlayer interaction. The energy gaps and chemical valences of both compounds are in agreement with experimental data. The crystal orbital Hamiltonian population (COHP) and charge density differential analysis show that interlayer chemical bonding plays a more important role than that van der Waals interactions in ThNF and ThNCl, in contrast to isostructural ZrNCl and HfNCl. These results explain why it is difficult to intercalate ThNF and ThNCl with charged particles, as observed in experiments.
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Affiliation(s)
- Xiao Liu
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Science Hefei 230031 China
- Science Island Branch of the Graduate School, University of Science and Technology of China Hefei 230026 China
| | - Da-Yong Liu
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Science Hefei 230031 China
| | - Ting-Ting Li
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Science Hefei 230031 China
- Science Island Branch of the Graduate School, University of Science and Technology of China Hefei 230026 China
| | - Dong-Meng Chen
- College of Science, China University of Petroleum Qingdao 266580 China
| | - Liang-Jian Zou
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Science Hefei 230031 China
- Science Island Branch of the Graduate School, University of Science and Technology of China Hefei 230026 China
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Selective Laser Melting of Aluminum and Its Alloys. MATERIALS 2020; 13:ma13204564. [PMID: 33066589 PMCID: PMC7602471 DOI: 10.3390/ma13204564] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/14/2020] [Revised: 10/05/2020] [Accepted: 10/10/2020] [Indexed: 11/28/2022]
Abstract
The laser-based powder bed fusion (LBPF) process or commonly known as selective laser melting (SLM) has made significant progress since its inception. Initially, conventional materials like 316L, Ti6Al4V, and IN-718 were fabricated using the SLM process. However, it was inevitable to explore the possible fabrication of the second most popular structural material after Fe-based alloys/steel, the Al-based alloys by SLM. Al-based alloys exhibit some inherent difficulties due to the following factors: the presence of surface oxide layer, solidification cracking during melt cooling, high reflectivity from the surface, high thermal conductivity of the metal, poor flowability of the powder, low melting temperature, etc. Researchers have overcome these difficulties to successfully fabricate the different Al-based alloys by SLM. However, there exists no review dealing with the fabrication of different Al-based alloys by SLM, their fabrication issues, microstructure, and their correlation with properties in detail. Hence, the present review attempts to introduce the SLM process followed by a detailed discussion about the processing parameters that form the core of the alloy development process. This is followed by the current research status on the processing of Al-based alloys and microstructure evaluation (including defects, internal stresses, etc.), which are dealt with on the basis of individual Al-based series. The mechanical properties of these alloys are discussed in detail followed by the other important properties like tribological properties, fatigue properties, etc. Lastly, an outlook is given at the end of this review.
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Zuo P, Jiang L, Li X, Tian M, Xu C, Yuan Y, Ran P, Li B, Lu Y. Maskless Micro/Nanopatterning and Bipolar Electrical Rectification of MoS 2 Flakes Through Femtosecond Laser Direct Writing. ACS APPLIED MATERIALS & INTERFACES 2019; 11:39334-39341. [PMID: 31552735 DOI: 10.1021/acsami.9b13059] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Molybdenum disulfide (MoS2) micro/nanostructures are desirable for tuning electronic properties, developing required functionality, and improving the existing performance of multilayer MoS2 devices. This work presents a useful method to flexibly microprocess multilayer MoS2 flakes through femtosecond laser pulse direct writing, which can directly fabricate regular MoS2 nanoribbon arrays with ribbon widths of 179, 152, 116, 98, and 77 nm, and arbitrarily pattern MoS2 flakes to form micro/nanostructures such as single nanoribbon, labyrinth array, and cross structure. This method is mask-free and simple and has high flexibility, strong controllability, and high precision. Moreover, numerous oxygen molecules are chemically and physically adsorbed on laser-processed MoS2, attributed to roughness defect sites and edges of micro/nanostructures that contain numerous unsaturated edge sites and highly active centers. In addition, electrical tests of the field-effect transistor fabricated from the prepared MoS2 nanoribbon arrays reveal new interesting features: output and transfer characteristics exhibit a strong rectification (not going through zero and bipolar conduction) of drain-source current, which is supposedly attributed to the parallel structures with many edge defects and p-type chemical doping of oxygen molecules on MoS2 nanoribbon arrays. This work demonstrates the ability of femtosecond laser pulses to directly induce micro/nanostructures, property changes, and new device properties of two-dimensional materials, which may enable new applications in electronic devices based on MoS2 such as logic circuits, complementary circuits, chemical sensors, and p-n diodes.
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Affiliation(s)
- Pei Zuo
- Laser Micro/Nano Fabrication Laboratory, School of Mechanical Engineering , Beijing Institute of Technology , Beijing 100081 , P. R. China
| | - Lan Jiang
- Laser Micro/Nano Fabrication Laboratory, School of Mechanical Engineering , Beijing Institute of Technology , Beijing 100081 , P. R. China
| | - Xin Li
- Laser Micro/Nano Fabrication Laboratory, School of Mechanical Engineering , Beijing Institute of Technology , Beijing 100081 , P. R. China
| | - Mengyao Tian
- Laser Micro/Nano Fabrication Laboratory, School of Mechanical Engineering , Beijing Institute of Technology , Beijing 100081 , P. R. China
| | - Chenyang Xu
- Laser Micro/Nano Fabrication Laboratory, School of Mechanical Engineering , Beijing Institute of Technology , Beijing 100081 , P. R. China
| | - Yongjiu Yuan
- Laser Micro/Nano Fabrication Laboratory, School of Mechanical Engineering , Beijing Institute of Technology , Beijing 100081 , P. R. China
| | - Peng Ran
- Laser Micro/Nano Fabrication Laboratory, School of Mechanical Engineering , Beijing Institute of Technology , Beijing 100081 , P. R. China
| | - Bo Li
- Laser Micro/Nano Fabrication Laboratory, School of Mechanical Engineering , Beijing Institute of Technology , Beijing 100081 , P. R. China
| | - Yongfeng Lu
- Laser Assisted Nano Engineering Laboratory, Department of Electrical and Computer Engineering , University of Nebraska-Lincoln , Lincoln , Nebraska 68588-0511 , United States
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Fan P, Zheng B, Sun X, Zheng W, Xu Z, Ge C, Liu Y, Zhuang X, Li D, Wang X, Zhu X, Jiang Y, Pan A. Trion-Induced Distinct Transient Behavior and Stokes Shift in WS 2 Monolayers. J Phys Chem Lett 2019; 10:3763-3772. [PMID: 31244271 DOI: 10.1021/acs.jpclett.9b01422] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Understanding the excitonic behavior in two-dimensional transition-metal dichalcogenides (2D TMDs) is of both fundamental interest and critical importance for optoelectronic applications. Here, we investigate the transient excitonic behavior and Stokes shift in WS2 monolayers on both sapphire and glass substrates. Trion formation was confirmed as the origin of the distinct photoluminescence (PL) emission and Stokes shift in WS2 monolayers. Moreover, the transient studies demonstrate faster recombination of both the exciton and the short-lived trion on the glass substrate as compared to that on the sapphire substrate, owing to the heavier n-doping and greater number of defects introduced by the glass substrate. In addition, a long-lived trion species attributed to the intervalley triplet trion was observed on the glass substrate, with a lifetime on the nanosecond time scale. These findings offer a comprehensive understanding of the excitonic behavior and Stokes shift in WS2 monolayers and will lay the foundation for further fundamental investigations in the field.
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Affiliation(s)
- Peng Fan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics , Hunan University , Changsha 410082 , People's Republic of China
| | - Biyuan Zheng
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics , Hunan University , Changsha 410082 , People's Republic of China
| | - Xingxia Sun
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering , Hunan University , Changsha 410082 , People's Republic of China
| | - Weihao Zheng
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics , Hunan University , Changsha 410082 , People's Republic of China
| | - Zheyuan Xu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics , Hunan University , Changsha 410082 , People's Republic of China
| | - Cuihuan Ge
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics , Hunan University , Changsha 410082 , People's Republic of China
| | - Yong Liu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics , Hunan University , Changsha 410082 , People's Republic of China
| | - Xiujuan Zhuang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics , Hunan University , Changsha 410082 , People's Republic of China
| | - Dong Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering , Hunan University , Changsha 410082 , People's Republic of China
| | - Xiao Wang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics , Hunan University , Changsha 410082 , People's Republic of China
| | - Xiaoli Zhu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics , Hunan University , Changsha 410082 , People's Republic of China
| | - Ying Jiang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics , Hunan University , Changsha 410082 , People's Republic of China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering , Hunan University , Changsha 410082 , People's Republic of China
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13
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Wang L, Schmid M, Nilsson ZN, Tahir M, Chen H, Sambur JB. Laser Annealing Improves the Photoelectrochemical Activity of Ultrathin MoSe 2 Photoelectrodes. ACS APPLIED MATERIALS & INTERFACES 2019; 11:19207-19217. [PMID: 31070890 DOI: 10.1021/acsami.9b04785] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Understanding light-matter interactions in transition-metal dichalcogenides (TMDs) is critical for optoelectronic device applications. Several studies have shown that high intensity light irradiation can tune the optical and physical properties of pristine TMDs. The enhancement in optoelectronic properties has been attributed to a so-called laser annealing effect that heals chalcogen vacancies. However, it is unknown whether laser annealing improves functional properties such as photocatalytic activity. Here, we show that high intensity supra band gap illumination improves the photoelectrochemical activity of MoSe2 nanosheets for iodide oxidation in indium doped tin oxide/MoSe2/I-, I3-/Pt liquid junction solar cells. Ensemble-level photoelectrochemical measurements show that, on average, illuminating MoSe2 thin films with 1 W/cm2 532 nm excitation increases the photoelectrochemical current by 142% and shifts the photocurrent response to more favorable (negative) potentials. Scanning photoelectrochemical microscopy measurements reveal that pristine bilayer (2L)-MoSe2, trilayer (3L)-MoSe2, and multilayer-thick nanosheets are initially inactive for iodide oxidation. The light treatment activates 2L-MoSe2 and 3L-MoSe2 materials, and the activation process initiates at the edge sites. The photocurrent enhancement is more significant for 2L-MoSe2 than for 1L-MoSe2. Multilayer-thick MoSe2 remains inactive for iodide oxidation even after the laser treatment. Our microscopy measurements reveal that the laser-induced enhancement effect depends critically on MoSe2 layer thickness. X-ray photoelectron spectroscopy measurements further show that the laser treatment oxidizes Mo(IV) species that are initially associated with Se vacancies. Ambient oxygen fills the Se vacancies and removes trap states, thereby increasing the overall photogenerated carrier collection efficiency. To the best of our knowledge, this work represents the first report on using laser to enhance the photoelectrocatalytic properties of few-layer-thick TMDs. The simple and rapid laser annealing procedure is a promising strategy to tune the reactivity of TMD-based photoelectrochemical cells for electricity and chemical fuel production.
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14
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Peruzzini M, Bini R, Bolognesi M, Caporali M, Ceppatelli M, Cicogna F, Coiai S, Heun S, Ienco A, Benito II, Kumar A, Manca G, Passaglia E, Scelta D, Serrano‐Ruiz M, Telesio F, Toffanin S, Vanni M. A Perspective on Recent Advances in Phosphorene Functionalization and Its Applications in Devices. Eur J Inorg Chem 2019; 2019:1476-1494. [PMID: 31007576 PMCID: PMC6472490 DOI: 10.1002/ejic.201801219] [Citation(s) in RCA: 26] [Impact Index Per Article: 5.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/05/2018] [Indexed: 01/01/2023]
Abstract
Phosphorene, the 2D material derived from black phosphorus, has recently attracted a lot of interest for its properties, suitable for applications in materials science. The physical features and the prominent chemical reactivity on its surface render this nanolayered substrate particularly promising for electrical and optoelectronic applications. In addition, being a new potential ligand for metals, it opens the way for a new role of the inorganic chemistry in the 2D world, with special reference to the field of catalysis. The aim of this review is to summarize the state of the art in this subject and to present our most recent results in the preparation, functionalization, and use of phosphorene and its decorated derivatives. We discuss several key points, which are currently under investigation: the synthesis, the characterization by theoretical calculations, the high pressure behavior of black phosphorus, as well as its decoration with nanoparticles and encapsulation in polymers. Finally, device fabrication and electrical transport measurements are overviewed on the basis of recent literature and the new results collected in our laboratories.
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Affiliation(s)
- Maurizio Peruzzini
- Consiglio Nazionale delle Ricerche ‐ Istituto di Chimica dei Composti OrganometalliciVia Madonna del Piano 1050019Sesto Fiorentino, FlorenceItaly
| | - Roberto Bini
- Consiglio Nazionale delle Ricerche ‐ Istituto di Chimica dei Composti OrganometalliciVia Madonna del Piano 1050019Sesto Fiorentino, FlorenceItaly
- LENS ‐ European Laboratory for Non‐Linear SpectroscopyVia N. Carrara 1, I‐50019Sesto Fiorentino (FI)Italy
- Dipartimento di Chimica “Ugo SchiffUniversità degli Studi di FirenzeVia della Lastruccia 3, I‐50019Sesto Fiorentino (FI)Italy
| | - Margherita Bolognesi
- Consiglio Nazionale delle Ricerche ‐ Istituto per lo Studio dei Materiali NanostrutturatiVia Piero Gobetti, 10140129Bologna BOItaly
| | - Maria Caporali
- Consiglio Nazionale delle Ricerche ‐ Istituto di Chimica dei Composti OrganometalliciVia Madonna del Piano 1050019Sesto Fiorentino, FlorenceItaly
| | - Matteo Ceppatelli
- Consiglio Nazionale delle Ricerche ‐ Istituto di Chimica dei Composti OrganometalliciVia Madonna del Piano 1050019Sesto Fiorentino, FlorenceItaly
- LENS ‐ European Laboratory for Non‐Linear SpectroscopyVia N. Carrara 1, I‐50019Sesto Fiorentino (FI)Italy
| | - Francesca Cicogna
- Consiglio Nazionale delle Ricerche ‐ Istituto di Chimica dei Composti OrganometalliciSS PisaVia Moruzzi 156124PisaItaly
| | - Serena Coiai
- Consiglio Nazionale delle Ricerche ‐ Istituto di Chimica dei Composti OrganometalliciSS PisaVia Moruzzi 156124PisaItaly
| | - Stefan Heun
- NESTIstituto Nanoscienze‐CNR and Scuola Normale SuperiorePiazza San Silvestro 1256127PisaItaly
| | - Andrea Ienco
- Consiglio Nazionale delle Ricerche ‐ Istituto di Chimica dei Composti OrganometalliciVia Madonna del Piano 1050019Sesto Fiorentino, FlorenceItaly
| | - Iñigo Iglesias Benito
- Consiglio Nazionale delle Ricerche ‐ Istituto di Chimica dei Composti OrganometalliciVia Madonna del Piano 1050019Sesto Fiorentino, FlorenceItaly
- Dipartimento di Biotecnologie, Chimica e FarmaciaUniversità di Siena53100SienaItaly
| | - Abhishek Kumar
- NESTIstituto Nanoscienze‐CNR and Scuola Normale SuperiorePiazza San Silvestro 1256127PisaItaly
| | - Gabriele Manca
- Consiglio Nazionale delle Ricerche ‐ Istituto di Chimica dei Composti OrganometalliciVia Madonna del Piano 1050019Sesto Fiorentino, FlorenceItaly
| | - Elisa Passaglia
- Consiglio Nazionale delle Ricerche ‐ Istituto di Chimica dei Composti OrganometalliciSS PisaVia Moruzzi 156124PisaItaly
| | - Demetrio Scelta
- Consiglio Nazionale delle Ricerche ‐ Istituto di Chimica dei Composti OrganometalliciVia Madonna del Piano 1050019Sesto Fiorentino, FlorenceItaly
- LENS ‐ European Laboratory for Non‐Linear SpectroscopyVia N. Carrara 1, I‐50019Sesto Fiorentino (FI)Italy
| | - Manuel Serrano‐Ruiz
- Consiglio Nazionale delle Ricerche ‐ Istituto di Chimica dei Composti OrganometalliciVia Madonna del Piano 1050019Sesto Fiorentino, FlorenceItaly
| | - Francesca Telesio
- NESTIstituto Nanoscienze‐CNR and Scuola Normale SuperiorePiazza San Silvestro 1256127PisaItaly
| | - Stefano Toffanin
- Consiglio Nazionale delle Ricerche ‐ Istituto per lo Studio dei Materiali NanostrutturatiVia Piero Gobetti, 10140129Bologna BOItaly
| | - Matteo Vanni
- Consiglio Nazionale delle Ricerche ‐ Istituto di Chimica dei Composti OrganometalliciVia Madonna del Piano 1050019Sesto Fiorentino, FlorenceItaly
- Dipartimento di Biotecnologie, Chimica e FarmaciaUniversità di Siena53100SienaItaly
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15
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Zuo P, Jiang L, Li X, Ran P, Li B, Song A, Tian M, Ma T, Guo B, Qu L, Lu Y. Enhancing charge transfer with foreign molecules through femtosecond laser induced MoS 2 defect sites for photoluminescence control and SERS enhancement. NANOSCALE 2019; 11:485-494. [PMID: 30543248 DOI: 10.1039/c8nr08785g] [Citation(s) in RCA: 17] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Defect/active site control is crucial for tuning the chemical, optical, and electronic properties of MoS2, which can adjust the performance of MoS2 in application areas such as electronics, optics, catalysis, and molecular sensing. This study presents an effective method of inducing defect/active sites, including micro/nanofractured structures and S atomic vacancies, on monolayer MoS2 flakes by using femtosecond laser pulses, through which physical-chemical adsorption and charge transfer between foreign molecules (O2 or R6G molecules) and MoS2 are enhanced. The enhanced charge transfer between foreign molecules (O2 or R6G) and femtosecond laser-treated MoS2 can enhance the electronic doping effect between them, hence resulting in a photoluminescence photon energy shift (reaching 0.05 eV) of MoS2 and Raman enhancement (reaching 6.4 times) on MoS2 flakes for R6G molecule detection. Finally, photoluminescence control and micropatterns on MoS2 and surface-enhanced-Raman-scattering (SERS) enhancement of MoS2 for organic molecule detection are achieved. The proposed method, which can control the photoluminescence properties and arbitrary micropatterns on MoS2 and enhance its chemicobiological sensing performance for organic/biological molecules, has advantages of simplicity, maskless processing, strong controllability, high precision, and high flexibility, highlighting the superior ability of femtosecond laser pulses to achieve the property control and functionalization of two-dimensional materials.
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Affiliation(s)
- Pei Zuo
- Laser Micro/Nano Fabrication Laboratory, School of Mechanical Engineering, Beijing Institute of Technology, Beijing 100081, P.R. China.
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16
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Hu Z, Niu T, Guo R, Zhang J, Lai M, He J, Wang L, Chen W. Two-dimensional black phosphorus: its fabrication, functionalization and applications. NANOSCALE 2018; 10:21575-21603. [PMID: 30457619 DOI: 10.1039/c8nr07395c] [Citation(s) in RCA: 19] [Impact Index Per Article: 3.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Phosphorus, one of the most abundant elements in the Earth (∼0.1%), has attracted much attention in the last five years since the rediscovery of two-dimensional (2D) black phosphorus (BP) in 2014. The successful scaling down of BP endows this 'old material' with new vitality, resulting from the intriguing semiconducting properties in the atomic scale limit, i.e. layer-dependent bandgap that covers from the visible light to mid-infrared light spectrum as well as hole-dominated ambipolar transport characteristics. Intensive research effort has been devoted to the fabrication, characterization, functionalization and application of BP and other phosphorus allotropes. In this review article, we summarize the fundamental properties and fabrication techniques of BP, with particular emphasis on the recent progress in molecular beam epitaxy growth of 2D phosphorus. Subsequently, we highlight recent progress in BP (opto)electronic device applications achieved via customized manipulation methods, such as interface, defect and bandgap engineering as well as forming Lego-like stacked heterostructures.
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Affiliation(s)
- Zehua Hu
- School of Physics and Optoelectronic Engineering, Nanjing University of Information Science & Technology, Nanjing 210044, China and Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore.
| | - Tianchao Niu
- Herbert Gleiter Institute of Nanoscience, College of Materials Science and Engineering, Nanjing University of Science and Technology, No. 200 Xiaolingwei, Nanjing 210094, China.
| | - Rui Guo
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, 117543, Singapore
| | - Jialin Zhang
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, 117543, Singapore
| | - Min Lai
- School of Physics and Optoelectronic Engineering, Nanjing University of Information Science & Technology, Nanjing 210044, China
| | - Jun He
- School of Physics and Electronics, Central South University, 932 Lushan Road, Changsha 100083, China
| | - Li Wang
- Institute for Advanced Study and Department of Physics, Nanchang University, 999 Xue Fu Da Dao, Nanchang 330000, China
| | - Wei Chen
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore. and Department of Chemistry, National University of Singapore, 3 Science Drive 3, 117543, Singapore and National University of Singapore (Suzhou) Research Institute, 377 Lin Quan Street, Suzhou Industrial Park, Suzhou 215123, China
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17
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Samadi M, Sarikhani N, Zirak M, Zhang H, Zhang HL, Moshfegh AZ. Group 6 transition metal dichalcogenide nanomaterials: synthesis, applications and future perspectives. NANOSCALE HORIZONS 2018; 3:90-204. [PMID: 32254071 DOI: 10.1039/c7nh00137a] [Citation(s) in RCA: 116] [Impact Index Per Article: 19.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Group 6 transition metal dichalcogenides (G6-TMDs), most notably MoS2, MoSe2, MoTe2, WS2 and WSe2, constitute an important class of materials with a layered crystal structure. Various types of G6-TMD nanomaterials, such as nanosheets, nanotubes and quantum dot nano-objects and flower-like nanostructures, have been synthesized. High thermodynamic stability under ambient conditions, even in atomically thin form, made nanosheets of these inorganic semiconductors a valuable asset in the existing library of two-dimensional (2D) materials, along with the well-known semimetallic graphene and insulating hexagonal boron nitride. G6-TMDs generally possess an appropriate bandgap (1-2 eV) which is tunable by size and dimensionality and changes from indirect to direct in monolayer nanosheets, intriguing for (opto)electronic, sensing, and solar energy harvesting applications. Moreover, rich intercalation chemistry and abundance of catalytically active edge sites make them promising for fabrication of novel energy storage devices and advanced catalysts. In this review, we provide an overview on all aspects of the basic science, physicochemical properties and characterization techniques as well as all existing production methods and applications of G6-TMD nanomaterials in a comprehensive yet concise treatment. Particular emphasis is placed on establishing a linkage between the features of production methods and the specific needs of rapidly growing applications of G6-TMDs to develop a production-application selection guide. Based on this selection guide, a framework is suggested for future research on how to bridge existing knowledge gaps and improve current production methods towards technological application of G6-TMD nanomaterials.
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Affiliation(s)
- Morasae Samadi
- Department of Physics, Sharif University of Technology, Tehran 11155-9161, Iran.
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18
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Hu Z, Wu Z, Han C, He J, Ni Z, Chen W. Two-dimensional transition metal dichalcogenides: interface and defect engineering. Chem Soc Rev 2018; 47:3100-3128. [DOI: 10.1039/c8cs00024g] [Citation(s) in RCA: 429] [Impact Index Per Article: 71.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/26/2022]
Abstract
This review summarizes the recent advances in understanding the effects of interface and defect engineering on the electronic and optical properties of TMDCs, as well as their applications in advanced (opto)electronic devices.
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Affiliation(s)
- Zehua Hu
- Department of Chemistry
- National University of Singapore
- Singapore 117543
- Singapore
- Centre for Advanced 2D Materials and Graphene Research Centre
| | - Zhangting Wu
- School of Physics
- Southeast University
- Nanjing 211189
- China
| | - Cheng Han
- Department of Chemistry
- National University of Singapore
- Singapore 117543
- Singapore
- Centre for Advanced 2D Materials and Graphene Research Centre
| | - Jun He
- School of Physics and Electronics
- Central South University
- Changsha
- China
| | - Zhenhua Ni
- School of Physics
- Southeast University
- Nanjing 211189
- China
| | - Wei Chen
- Department of Chemistry
- National University of Singapore
- Singapore 117543
- Singapore
- Centre for Advanced 2D Materials and Graphene Research Centre
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19
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Lu J, Liu H, Sun J. Negative terahertz photoconductivity in 2D layered materials. NANOTECHNOLOGY 2017; 28:464001. [PMID: 28901296 DOI: 10.1088/1361-6528/aa8c28] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
The remarkable qualities of 2D layered materials such as wide spectral coverage, high strength and great flexibility mean that ultrathin 2D layered materials have the potential to meet the criteria of next-generation optoelectronic devices. Photoconductivity is one of the critical parameters of materials applied to optoelectronics. In contrast to traditional semiconductors, specific ultrathin 2D layers present anomalous negative photoconductivity. This opens a new avenue for designing novel optoelectronic devices. It is important to have a deep understanding of the fundamentals of this anomalous response, in order to design and optimize such devices. In this review, we provide an overview of the observation of negative photoconductivity in 2D layered materials including graphene, topological insulators and transitional metal dichalcogenides. We also summarize recent reports on investigations into the fundamental mechanism using ultrafast terahertz (THz) spectroscopies. Finally, we conclude the review by discussing the existing challenges and proposing the possible prospects of this direction of research.
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Affiliation(s)
- Junpeng Lu
- School of Physics, Southeast University, Nanjing 211189, People's Republic of China
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20
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Abstract
Since the beginning of 2014, phosphorene, a monolayer or few-layer of black phosphorus, has been rediscovered as a two-dimensional (2D) thin film, revealing a plethora of properties different from the bulk material studied so far. Similar to graphene and transition metal dichalcogenides (TMDs), phosphorene is also a layered material that can be exfoliated to yield individual layers. It is one of the few monoelemental 2D crystals and the only one, besides graphene, known to be stable in monolayer, few layer, and bulk form. Recently the intensified research in phosphorene is motivated not only by the study of its fundamental physical properties in the 2D regime, such as tunable bandgap and anisotropic behavior, but also by the high carrier mobility and good on/off ratio of phosphorene-based device prototypes, making it a potential alternative for next generation nanooptoelectronics and nanophotonics applications in the "post-graphene age" The electronic bandgap of phosphorene changes from 0.3 eV in the bulk to 2.1 eV in monolayer. Thus, phosphorene exhibits strong light-matter interactions in the visible and infrared (IR) frequencies. In this Account, we present the progress on understanding the various interactions between light and phosphorene, giving insight into the mechanism of these interactions and the respective applications. We begin by discussing the fundamental optical properties of phosphorene, using theoretical calculations to depict the layer-dependent electronic band structures and anisotropic optical properties. Many-body effects in phosphorene, including excitons and trions and their binding energies and dynamics are reviewed as observed in experiments. For phosphorene, the fast degradation in ambient condition, caused by photoinduced oxidation, is considered as a longstanding challenge. In contrast, oxidation can be used to engineer the band structure of phosphorene and, in parallel, its optical properties. Based on the strong light-matter interactions, we introduce a controllable method to directly oxidize phosphorene by laser techniques. With the oxidization induced by laser scanning, localized bandgap engineering can be achieved and microphotonics are demonstrated on the oxidized phosphorene. Finally, we will present a brief discussion on the realization of phosphorene-based building blocks of optoelectronic devices. Naturally, the strong light-matter interactions in phosphorene could enable efficient photoelectric conversion in optoelectronic devices. We will describe high performance photodetectors based on phosphorene, and the working mechanism of those devices will be introduced. The photovoltaic effect could also be exhibited in phosphorene. This indicates the pervasive potential of phosphorene in nanooptoelectronics.
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Affiliation(s)
- Junpeng Lu
- Department
of Physics, National University of Singapore, 2 Science Drive 3, 117542 Singapore
- Center
for Advanced 2D Materials and Graphene Research Center, National University of Singapore, 6 Science Drive 2, 117546 Singapore
| | - Jiong Yang
- Research
School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Alexandra Carvalho
- Center
for Advanced 2D Materials and Graphene Research Center, National University of Singapore, 6 Science Drive 2, 117546 Singapore
| | - Hongwei Liu
- Institute
of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis, #08-03, 138634 Singapore
| | - Yuerui Lu
- Research
School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Chorng Haur Sow
- Department
of Physics, National University of Singapore, 2 Science Drive 3, 117542 Singapore
- Center
for Advanced 2D Materials and Graphene Research Center, National University of Singapore, 6 Science Drive 2, 117546 Singapore
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21
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Room-temperature exciton-polaritons with two-dimensional WS2. Sci Rep 2016; 6:33134. [PMID: 27640988 PMCID: PMC5027543 DOI: 10.1038/srep33134] [Citation(s) in RCA: 60] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/25/2016] [Accepted: 08/16/2016] [Indexed: 12/24/2022] Open
Abstract
Two-dimensional transition metal dichalcogenides exhibit strong optical transitions with significant potential for optoelectronic devices. In particular they are suited for cavity quantum electrodynamics in which strong coupling leads to polariton formation as a root to realisation of inversionless lasing, polariton condensation and superfluidity. Demonstrations of such strongly correlated phenomena to date have often relied on cryogenic temperatures, high excitation densities and were frequently impaired by strong material disorder. At room-temperature, experiments approaching the strong coupling regime with transition metal dichalcogenides have been reported, but well resolved exciton-polaritons have yet to be achieved. Here we report a study of monolayer WS2 coupled to an open Fabry-Perot cavity at room-temperature, in which polariton eigenstates are unambiguously displayed. In-situ tunability of the cavity length results in a maximal Rabi splitting of ħΩRabi = 70 meV, exceeding the exciton linewidth. Our data are well described by a transfer matrix model appropriate for the large linewidth regime. This work provides a platform towards observing strongly correlated polariton phenomena in compact photonic devices for ambient temperature applications.
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22
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Liu H, Lu J, Ho K, Hu Z, Dang Z, Carvalho A, Tan HR, Tok ES, Sow CH. Fluorescence Concentric Triangles: A Case of Chemical Heterogeneity in WS2 Atomic Monolayer. NANO LETTERS 2016; 16:5559-5567. [PMID: 27479127 DOI: 10.1021/acs.nanolett.6b02111] [Citation(s) in RCA: 14] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
We report a novel optical property in WS2 monolayer. The monolayer naturally exhibits beautiful in-plane periodical and lateral homojunctions by way of alternate dark and bright band in the fluorescence images of these monolayers. The interface between different fluorescence species within the sample is distinct and sharp. This gives rise to intriguing concentric triangular fluorescence patterns in the monolayer. The novel optical property of this special WS2 monolayer is facilitated by chemical heterogeneity. The photoluminescence of the bright band is dominated by emissions from trion and biexciton while the emission from defect-bound exciton dominates the photoluminescence at the dark band. The discovery of such concentric fluorescence patterns represents a potentially new form of optoelectronic or photonic functionality.
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Affiliation(s)
- Hongwei Liu
- Department of Physics, National University of Singapore , 2 Science Drive 3, Singapore 117542
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research) , 2 Fusionopolis Way, Innovis, 08-03, Singapore 138634
| | - Junpeng Lu
- Department of Physics, National University of Singapore , 2 Science Drive 3, Singapore 117542
- Center For Advanced 2D Materials and Graphene Research Center, National University of Singapore , 6 Science Drive 2, Singapore 117546
| | - Kenneth Ho
- Department of Physics, National University of Singapore , 2 Science Drive 3, Singapore 117542
| | - Zhenliang Hu
- Department of Physics, National University of Singapore , 2 Science Drive 3, Singapore 117542
| | - Zhiya Dang
- Department of Nanochemistry, Istituto Italiano di Tecnologia , Via Morego 30, 16163, Genova, Italy
| | - Alexandra Carvalho
- Center For Advanced 2D Materials and Graphene Research Center, National University of Singapore , 6 Science Drive 2, Singapore 117546
| | - Hui Ru Tan
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research) , 2 Fusionopolis Way, Innovis, 08-03, Singapore 138634
| | - Eng Soon Tok
- Department of Physics, National University of Singapore , 2 Science Drive 3, Singapore 117542
| | - Chorng Haur Sow
- Department of Physics, National University of Singapore , 2 Science Drive 3, Singapore 117542
- Center For Advanced 2D Materials and Graphene Research Center, National University of Singapore , 6 Science Drive 2, Singapore 117546
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23
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Zhou M, Zhang Z, Huang K, Shi Z, Xie R, Yang W. Colloidal preparation and electrocatalytic hydrogen production of MoS2 and WS2 nanosheets with controllable lateral sizes and layer numbers. NANOSCALE 2016; 8:15262-72. [PMID: 27494535 DOI: 10.1039/c6nr04775k] [Citation(s) in RCA: 22] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
Although layered transition metal dichalcogenide (TMD) nanosheets have attracted great attention due to their unique properties, it still remains challenge to develop a facile strategy for the precise control of the lateral sizes and layer numbers of TMD nanosheets. In this study, we demonstrate a solution-phase synthetic protocol to prepare colloidal MS2 (M = Mo, W) nanosheets which possess extremely small lateral dimensions from 15 to 40 nm and well-controlled odd numbers of layers, such as 1, 3, and 5 layers, as characterized by transmission electron microscopy, X-ray diffraction and X-ray photoelectron spectroscopy. The size- and layer-dependence of the optical properties of colloidal MS2 (M = Mo, W) nanosheets are revealed by Raman and absorption spectra for the first time. These colloidal nanosheets, especially the single-layer ones, possess a large number of edge sites that serve as active sites for the hydrogen evolution reaction (HER). The catalysts exhibit a small HER overpotential and low Tafel slope of approximately 100 mV and 52 mV per decade for MoS2, and 80 mV and 46 mV per decade for WS2, respectively. Importantly, these products show enhanced stability after 500 potential cycles, and the current density remains almost unchanged during the test.
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Affiliation(s)
- Miao Zhou
- College of Chemistry, Jilin University, Changchun 130012, China.
| | - Zhuolei Zhang
- College of Chemistry, Jilin University, Changchun 130012, China.
| | - Keke Huang
- State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, Jilin University, Changchun 130012, China
| | - Zhan Shi
- State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, Jilin University, Changchun 130012, China
| | - Renguo Xie
- College of Chemistry, Jilin University, Changchun 130012, China.
| | - Wensheng Yang
- College of Chemistry, Jilin University, Changchun 130012, China.
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