Characterization of the structural defects in CVD-grown monolayered MoS2 using near-field photoluminescence imaging

Disentangling doping and strain effects at defects of grown MoS2 monolayers with nano-optical spectroscopy

The role of defects in two-dimensional semiconductors and how they affect the intrinsic properties of these materials have been a widely researched topic over the past few decades. Optical characterization techniques such as photoluminescence and Raman spectroscopies are important tools to probe the physical properties of semiconductors and the impact of defects. However, confocal optical techniques present a spatial resolution limitation lying in a μm-scale, which can be overcome by the use of near-field optical measurements. Here, we use tip-enhanced photoluminescence and Raman spectroscopies to unveil the nanoscale optical properties of grown MoS2 monolayers, revealing that the impact of doping and strain can be disentangled by the combination of both techniques. A noticeable enhancement of the exciton peak intensity corresponding to trion emission quenching is observed at narrow regions down to a width of 47 nm at grain boundaries related to doping effects. Besides, localized strain fields inside the sample lead to non-uniformities in the intensity and energy position of photoluminescence peaks. Finally, two distinct MoS2 samples present different nano-optical responses at their edges associated with opposite strains. The edge of the first sample shows a photoluminescence intensity enhancement and energy blueshift corresponding to a frequency blueshift for E2g and 2LA Raman modes. In contrast, the other sample displays a photoluminescence energy redshift and frequency red shifts for E2g and 2LA Raman modes at their edges. Our work highlights the potential of combining tip-enhanced photoluminescence and Raman spectroscopies to probe localized strain fields and doping effects related to defects in two-dimensional materials.

Morphology Engineering of Hybrid Supercapacitor Electrodes from Hierarchical Stem-like Carbon Networks with Flower-like MoS2 Structures

There is a critical need to develop high-performance supercapacitors that can complement and even rival batteries for energy storage. This work introduces a strategy to drastically enhance the energy storage performance of a supercapacitor by engineering electrode morphologies with ternary composites offering distinct benefits for the energy storage application. The electrodes were fabricated with conductive networks of carbon nanotubes (CNTs) coated with a zeolitic imidazole framework (ZIF) for high ion diffusivity and ion-accumulating molybdenum disulfide (MoS₂) with various morphologies. These include flower-like (fMoS₂), stacked-plate (pMoS₂), and exfoliated-flake (eMoS₂) structures from topochemical synthesis. CNT-ZIF-fMoS₂ demonstrates an excellent energy density, reaching almost 80 Wh/kg, and a maximum power density of approximately 3000 W/kg in a half-cell. This is far superior to the electrodes containing pMoS₂ and eMoS₂ and attributed to the increased surface area and the faradaic reactivity offered by fMoS₂. Additionally, the CNT-ZIF-fMoS₂ electrode demonstrates exceptional stability with an ∼78% of capacitance retention over 10,000 cycles. This work suggests that the electrode morphologies can dominate the energy storage behaviors and that the heteromaterial approach may be crucial in designing next-generation supercapacitors.

Quantum plasmonic two-dimensional WS2-MoS2 heterojunction

Two-dimensional heterostructures have recently gained broad interest due to potential applications in optoelectronic devices. Their reduced dimensionality leads to novel physical effects beyond conventional bulk electronics. However, the optical properties of the 2D lateral heterojunctions have not been completely characterized due to the limited spatial resolution, requiring nano-optical techniques beyond the diffraction limit. Here, we investigate lateral monolayer WS₂-MoS₂ heterostructures in a plasmonic Au-Au tip-substrate picocavity using subdiffraction limited tip-enhanced photoluminescence (TEPL) spectroscopy with sub-nanometer tip-sample distance control. We observed more than 3 orders of magnitude PL enhancement by placing a plasmonic Au-coated tip at the resonantly excited heterojunction. We developed a theoretical model of the quantum plasmonic 2D heterojunction, where tunneling of hot electrons between the Au tip and MoS₂ leads to the quenching of the MoS₂ PL, while simultaneously increasing the WS₂ PL, in contrast to the non-resonant reverse transfer. Our simulations show good agreement with the experiments, revealing a range of parameters and enhancement factors corresponding to the switching between the classical and quantum regimes. The controllable photoresponse of the 2D heterojunction can be used in novel nanodevices.

A simple KPFM-based approach for electrostatic- free topographic measurements: the case of MoS2on SiO2

A simple implementation of Kelvin probe force microscopy (KPFM) is reported that enables recording topographic images in the absence of any component of the electrostatic force (including the static term). Our approach is based on a close loop z-spectroscopy operated in data cube mode. Curves of the tip-sample distance as a function of time are recorded onto a 2D grid. A dedicated circuit holds the KPFM compensation bias and subsequently cut off the modulation voltage during well-defined time-windows within the spectroscopic acquisition. Topographic images are recalculated from the matrix of spectroscopic curves. This approach is applied to the case of transition metal dichalcogenides (TMD) monolayers grown by chemical vapour deposition on silicon oxide substrates. In addition, we check to what extent a proper stacking height estimation can also be performed by recording series of images for decreasing values of the bias modulation amplitude. The outputs of both approaches are shown to be fully consistent. The results exemplify how in the operating conditions of non-contact AFM under ultra-high vacuum (nc-AFM), the stacking height values can dramatically be overestimated due to variations in the tip-surface capacitive gradient, even though the KPFM controller nullifies the potential difference. We show that the number of atomic layers of a TMD can be safely assessed, only if the KPFM measurement is performed with a modulated bias amplitude reduced at its strict minimum or, even better, without any modulated bias. Last, the spectroscopic data reveal that certain kind of defects can have a counterintuitive impact on the electrostatic landscape, resulting in an apparent decrease of the measured stacking height by conventional nc-AFM/KPFM compared to other sample areas. Hence, electrostatic free z-imaging proves to be a promising tool to assess the existence of defects in atomically thin TMD layers grown on oxides.

Retrieving Grain Boundaries in 2D Materials

The coalescence of randomly distributed grains with different crystallographic orientations can result in pervasive grain boundaries (GBs) in 2D materials during their chemical synthesis. GBs not only are the inherent structural imperfection that causes influential impacts on structures and properties of 2D materials, but also have emerged as a platform for exploring unusual physics and functionalities stemming from dramatic changes in local atomic organization and even chemical makeup. Here, recent advances in studying the formation mechanism, atomic structures, and functional properties of GBs in a range of 2D materials are reviewed. By analyzing the growth mechanism and the competition between far-field strain and local chemical energies of dislocation cores, a complete understanding of the rich GB morphologies as well as their dependence on lattice misorientations and chemical compositions is presented. Mechanical, electronic, and chemical properties tied to GBs in different materials are then discussed, towards raising the concept of using GBs as a robust atomic-scale scaffold for realizing tailored functionalities, such as magnetism, luminescence, and catalysis. Finally, the future opportunities in retrieving GBs for making functional devices and the major challenges in the controlled formation of GB structures for designed applications are commented.

Recent progress in 2D hybrid heterostructures from transition metal dichalcogenides and organic layers: properties and applications in energy and optoelectronics fields

Atomically thin transition metal dichalcogenides (TMDs) present extraordinary optoelectronic, electrochemical, and mechanical properties that have not been accessible in bulk semiconducting materials. Recently, a new research field, 2D hybrid heteromaterials, has emerged upon integrating TMDs with molecular systems, including organic molecules, polymers, metal-organic frameworks, and carbonaceous materials, that can tailor the TMD properties and exploit synergetic effects. TMD-based hybrid heterostructures can meet the demands of future optoelectronics, including supporting flexible, transparent, and ultrathin devices, and energy-based applications, offering high energy and power densities with long cycle lives. To realize such applications, it is necessary to understand the interactions between the hybrid components and to develop strategies for exploiting the distinct benefits of each component. Here, we provide an overview of the current understanding of the new phenomena and mechanisms involved in TMD/organic hybrids and potential applications harnessing such valuable materials in an insightful way. We highlight recent discoveries relating to multicomponent hybrid materials. Finally, we conclude this review by discussing challenges related to hybrid heteromaterials and presenting future directions and opportunities in this research field.

Coupling nanobubbles in 2D lateral heterostructures

Two-dimensional transition metal dichalcogenides provide flexible platforms for nanophotonic engineering due to their exceptional mechanical and optoelectronic properties. For example, continuous band gap tunability has been achieved in 2D TMDs by elastic strain engineering. Localized elastic deformations in nanobubbles behave as "artificial atoms" with a spatially varying band gap resulting in funnelling of excitons and photocarriers. Here we present a new method of nanobubble fabrication in monolayer 2D lateral heterostructures using high temperature superacid treatment. We fabricated MoS₂ and WS₂ nanobubbles and performed near-field imaging with nanoscale resolution using tip-enhanced photoluminescence (TEPL) spectroscopy. TEPL nanoimaging revealed the coupling between MoS₂ and WS₂ nanobubbles with a large synergistic PL enhancement due to the plasmonic tip, hot electrons, and exciton funnelling. We investigated the contributions of different enhancement mechanisms, and developed a quantum plasmonic model, in good agreement with the experiments. Our work opens new avenues in exploration of novel nanophotonic coupling schemes.

Visualization of Band Shifting and Interlayer Coupling in WxMo1-xS2 Alloys Using Near-Field Broadband Absorption Microscopy

Beyond-diffraction-limit optical absorption spectroscopy provides in-depth information on the graded band structures of composition-spread and stacked two-dimensional materials, in which direct/indirect bandgap, interlayer coupling, and defects significantly modify their optoelectronic functionalities such as photoluminescence efficiency. We here visualize the spatially varying band structure of monolayer and bilayer transition metal dichalcogenide alloys by using near-field broadband absorption microscopy. The near-field spectral and spatial information manifests the excitonic band shift that results from the interplay of composition spreading and interlayer coupling. These results enable us to identify, notably, the top layer of the bilayer alloy as pure WS₂. We also use the aberration-free near-field transmission images to demarcate the exact boundaries of alloyed and pure transition metal dichalcogenides. This technology can offer valuable insights on various layered structures in the era of "stacking science" in the quest of quantum optoelectronic devices.

Near-field spectroscopic imaging of exciton quenching at atomically sharp MoS2/WS2 lateral heterojunctions

Heterojunctions made by laterally stitching two different transition metal dichalcogenide monolayers create a unique one-dimensional boundary with intriguing local optical properties that can only be characterized by nanoscale-spatial-resolution spectral tools. Here, we use near-field photoluminescence (NF-PL) to reveal the narrowest region (105 nm) ever reported of photoluminescence quenching at the junction of a laterally stitched WS₂/MoS₂ monolayer. We attribute this quenching to the atomically sharp band offset that generates a strong electric force at the junction to easily dissociate excitons. Besides the sharp heterojunction, a model considering various widths of the alloying interfacial region under low or high optical pumping is presented. With a spatial resolution six times better than that of confocal microscopy, NF-PL provides an unprecedented spectral tool for non-scalable 1D lateral heterojunctions.

Computation of Flexoelectric Coefficients of a MoS2 monolayer with a Model of Self-consistently Distributed Effective Charges and Dipoles

Flexoelectricity is an electromechanical coupling phenomenon, that can generate noticeable electric polarization in dielectric materials for nanoscale strain gradients. It is gaining an increasing attention because of its potential applications, and the fact that experimental results were initially an order of magnitude higher than initial theoretical predictions. This stimulated intense experimental and theoretical researches to investigate flexoelectric coefficients in dielectric materials such as two-dimensional materials. In this work, we concentrate on the calculation of the flexoelectric coefficients of 2D-MoS2 thanks to a model using self-consistently determined charges and dipoles on the atoms. More specifically, we study the importance of two contributions which were neglected/omitted in previous papers using this model, namely the charge term in the total polarization and the conservation of electric charge through a Lagrange multiplier. Our calculations demonstrate that the results for flexoelectric coefficient computed with this improved definition of polarization agree better with experimental measurements, provided consistent definitions for signs are used. Additionally, we show how two physical contributions with opposite signs compete to give net values of flexoelectric coefficients that can be either positive of negative depending on their relative importance, and give net values for the case of MoS2.

Tip-Enhanced Photoluminescence of Freestanding Lateral Heterobubbles

Two-dimensional (2D) semiconducting materials have promising applications in flexible optoelectronics, nanophotonics, and sensing based on the broad tunability of their optical and electronic properties. 2D nanobubbles form exciton funnels due to localized strain that can be used as local emitters for information processing. Their nanoscale optical characterization requires the use of near-field scanning probe microscopy (SPM). However, previous near-field studies of 2D materials were performed on SiO₂/Si and metallic substrates using the plasmonic gap mode to increase the signal-to-noise ratio. Another challenge is the deterministic control of bubble size and location. We addressed these challenges by investigating the photoluminescence (PL) signals of freestanding monolayer lateral WSe₂-MoSe₂ heterostructures under the influence of strain exerted by a plasmonic SPM tip. For first time, we performed tip-enhanced PL imaging of freestanding 2D materials and studied the competition between the PL enhancement mechanisms by nanoindentation as a function of the tip-sample distance. We observed the tunability of PL as a function of bubble size, which opens new possibilities to design optoelectronic nanodevices.

MXene/WS2 hybrids for visible-light-activated NO2 sensing at room temperature

Optoelectronic gas sensors based on two-dimensional (2D) materials are touted as potential candidates for NO₂ sensing at room temperature. However, most of the developed optoelectronic sensors to date are confined to the ultraviolet region with unsatisfactory performance. Herein, a room-temperature visible-light-activated optoelectronic NO₂ sensor based on 2D/2D T₃C₂T_x/WS₂ nanocomposites is presented. The T₃C₂T_x/WS₂-based gas sensor exhibited fast response/recovery rate, full reversibility, long stability, good selectivity, and low detection limit (10 ppb). In addition to the efficient interfacial charge separation provided by 2D/2D heterostructures, the improvement of optoelectronic NO₂ sensing performance was attributed to the visible-light-activation effects. This study provides a promising method to fabricate room-temperature high-performance gas sensors based on 2D nanomaterials.

Size-dependent strain-engineered nanostructures in MoS2monolayer investigated by atomic force microscopy

The strain has been employed for controlled modification of electronical and mechanical properties of two-dimensional (2D) materials. However, the thermal strain-engineered behaviors of the CVD-grown MoS₂have not been systematically explored. Here, we investigated the strain-induced structure and properties of CVD-grown triangular MoS₂flakes by several advanced atomic force microscopy. Two different kinds of flakes with sharp-corner or vein-like nanostructures are experimentally discovered due to the size-dependent strain behaviors. The critical size of these two kinds of flakes can be roughly estimated at ∼17μm. Within the small flakes, the sharp-corner regions show specific strain-modified properties due to the suffering of large tensile strain. While in the large MoS₂flakes, the complicated vein-like nanoripple structures were formed due to the interface slipping process under the larger tensile strain. Our work not only demonstrates the size-specific strain behaviors of MoS₂flakes but also sheds light on the artificial design and preparation of strain-engineered nanostructures for the devices based on the 2D materials.

Adaptive tip-enhanced nano-spectroscopy

Tip-enhanced nano-spectroscopy, such as tip-enhanced photoluminescence (TEPL) and tip-enhanced Raman spectroscopy (TERS), generally suffers from inconsistent signal enhancement and difficulty in polarization-resolved measurement. To address this problem, we present adaptive tip-enhanced nano-spectroscopy optimizing the nano-optical vector-field at the tip apex. Specifically, we demonstrate dynamic wavefront shaping of the excitation field to effectively couple light to the tip and adaptively control for enhanced sensitivity and polarization-controlled TEPL and TERS. Employing a sequence feedback algorithm, we achieve ~4.4 × 10⁴-fold TEPL enhancement of a WSe₂ monolayer which is >2× larger than the normal TEPL intensity without wavefront shaping. In addition, with dynamical near-field polarization control in TERS, we demonstrate the investigation of conformational heterogeneity of brilliant cresyl blue molecules and the controllable observation of IR-active modes due to a large gradient field effect. Adaptive tip-enhanced nano-spectroscopy thus provides for a systematic approach towards computational nanoscopy making optical nano-imaging more robust and widely deployable.

Tip-enhanced nano-spectroscopy suffers from inconsistent signal and difficulty in polarization-resolved measurement. Here, the authors present adaptive tip-enhanced nano-spectroscopy, which enables the additional signal enhancement and near-field polarization control via dynamic wavefront shaping.

Photodegradation Protection in 2D In-Plane Heterostructures Revealed by Hyperspectral Nanoimaging: The Role of Nanointerface 2D Alloys

Single-layer heterostructures exhibit striking quasiparticle properties and many-body interaction effects that hold promise for a range of applications. However, their properties can be altered by intrinsic and extrinsic defects, thus diminishing their applicability. Therefore, it is of paramount importance to identify defects and understand 2D materials' degradation over time using advanced multimodal imaging techniques. Here we implemented a liquid-phase precursor approach to synthesize 2D in-plane MoS₂-WS₂ heterostructures exhibiting nanoscale alloyed interfaces and map exotic interface effects during photodegradation using a combination of hyperspectral tip-enhanced photoluminescence and Raman and near-field nanoscopy. Surprisingly, 2D alloyed regions exhibit thermal and photodegradation stability providing protection against oxidation. Coupled with surface and interface strain, 2D alloy regions create stable localized potential wells that concentrate excitonic species via a charge carrier funneling effect. These results demonstrate that 2D alloys can withstand extreme degradation effects over time and could enable stable 2D device engineering.

Real-time effect of electron beam on MoS2 field-effect transistors

Irradiation of MoS₂ field-effect transistors (FETs) fabricated on Si/SiO₂ substrates with electron beams (e-beams) below 30 keV creates electron-hole pairs (EHP) in the SiO₂, which increase the interface trap density (N_it ) and change the current path in the channel, resulting in performance changes. In situ measurements of the electrical characteristics of the FET performed using a nano-probe system mounted inside a scanning electron microscope show that e-beam irradiation enables both multilayer and monolayer MoS₂ channels act as conductors. The e-beams mostly penetrate the channel owing to their large kinetic energy, while the EHPs formed in the SiO₂ layer can contribute to the conductance by flowing into the MoS₂ channel or inducing the gate bias effect. The analysis of the device parameters in the initial state and the vent-evacuation state after e-beam irradiation can clarify the effect of the interplay between the e-beam-induced EHPs and ambient adsorbates on the carrier behavior, which depends on the thickness of the MoS₂ layer. DC and low frequency noise analysis reveals that the e-beam-induced EHPs increase N_it from 10⁹-10¹⁰ to 10¹¹ cm^-2 eV^-1 in both monolayer and multilayer devices, while the interfacial Coulomb scattering parameter α_SC increases by three times in the monolayer and decreases to one-tenth of its original value in the multilayer. In other words, an MoS₂ layer with a thickness of ∼30 nm is less sensitive to adsorbates by surface screening. Thus, the carrier mobility in the monolayer device decreases from 45.7 to 40 cm² V^-1 s^-1, while in the 30 nm-thick multilayer device, it increases from 4.9 to 5.6 cm² V^-1 s^-1. This is further evidenced by simulations of the distribution of interface traps and channel carriers in the MoS₂ FET before and after e-beam irradiation, demonstrating that Coulomb scattering decreases as the effective channel moves away from the interface.

Growth and Grain Boundaries in 2D Materials

Grain boundaries (GBs) are a kind of lattice imperfection widely existing in two-dimensional materials, playing a critical role in materials' properties and device performance. Related key issues in this area have drawn much attention and are still under intense investigation. These issues include the characterization of GBs at different length scales, the dynamic formation of GBs during the synthesis, the manipulation of the configuration and density of GBs for specific material functionality, and the understanding of structure-property relationships and device applications. This review will provide a general introduction of progress in this field. Several techniques for characterizing GBs, such as direct imaging by high-resolution transmission electron microscopy, visualization techniques of GBs by optical microscopy, plasmon propagation, or second harmonic generation, are presented. To understand the dynamic formation process of GBs during the growth, a general geometric approach and theoretical consideration are reviewed. Moreover, strategies controlling the density of GBs for GB-free materials or materials with tunable GB patterns are summarized, and the effects of GBs on materials' properties are discussed. Finally, challenges and outlook are provided.

A horizontal-type scanning near-field optical microscope with torsional mode operation toward high-resolution and non-destructive imaging of soft materials

We design and build a horizontal-type aperture based scanning near-field optical microscope (a-SNOM) with superior mechanical stability toward high-resolution and non-destructive topographic and optical imaging. We adopt the torsional mode in AFM (atomic force microscopy) operation to achieve a better force sensitivity and a higher topographic resolution when using pyramidal a-SNOM tips. The performance and stability of the AFM are evaluated through single-walled carbon nanotube and poly(3-hexyl-thiophene) nanowire samples. An optical resolution of 93 nm is deduced from the a-SNOM imaging of a metallic grating. Finally, a-SNOM fluorescence imaging of soft lipid domains is successfully achieved without sample damage by our horizontal-type a-SNOM instrument with torsional mode AFM operation.

Quantitative Nanoscale Absorption Mapping: A Novel Technique To Probe Optical Absorption of Two-Dimensional Materials

Two-dimensional semiconductors, in particular transition metal dichalcogenides and related heterostructures, have gained increasing interest as they constitute potential new building blocks for the next generation of electronic and optoelectronic applications. In this work, we develop a novel nondestructive and noncontact technique for mapping the absorption properties of 2D materials, by taking advantage of the underlying substrate cathodoluminescence emission. We map the quantitative absorption of MoS₂ and MoSe₂ monolayers, obtained on sapphire and oxidized silicon, with nanoscale resolution. We extend our technique to the characterization of the absorption properties of MoS₂/MoSe₂ van der Waals heterostructures. We demonstrate that interlayer excitonic phenomena enhance the absorption in the UV range. Our technique also highlights the presence of defects such as grain boundaries and ad-layers. We provide measurements on the absorption of grain boundaries in monolayer MoS₂ at different merging angles. We observe a higher absorption yield of randomly oriented monolayers with respect to 60° rotated monolayers. This work opens up a new possibility for characterizing the functional properties two-dimensional semiconductors at the nanoscale.

Reconfigurable Local Photoluminescence of Atomically-Thin Semiconductors via Ferroelectric-Assisted Effects

Combining a pair of materials of different structural dimensions and functional properties into a hybrid material system may realize unprecedented multi-functional device applications. Especially, two-dimensional (2D) materials are suitable for being incorporated into the heterostructures due to their colossal area-to-volume ratio, excellent flexibility, and high sensitivity to interfacial and surface interactions. Semiconducting molybdenum disulfide (MoS₂), one of the well-studied layered materials, has a direct band gap as one molecular layer and hence, is expected to be one of the promising key materials for next-generation optoelectronics. Here, using lateral 2D/3D heterostructures composed of MoS₂ monolayers and nanoscale inorganic ferroelectric thin films, reversibly tunable photoluminescence has been demonstrated at the microscale to be over 200% upon ferroelectric polarization reversal by using nanoscale conductive atomic force microscopy tips. Also, significant ferroelectric-assisted modulation in electrical properties has been achieved from field-effect transistor devices based on the 2D/3D heterostructrues. Moreover, it was also shown that the MoS₂ monolayer can be an effective electric field barrier in spite of its sub-nanometer thickness. These results would be of close relevance to exploring novel applications in the fields of optoelectronics and sensor technology.

Modern Scattering-Type Scanning Near-Field Optical Microscopy for Advanced Material Research

Infrared and optical spectroscopy represents one of the most informative methods in advanced materials research. As an important branch of modern optical techniques that has blossomed in the past decade, scattering-type scanning near-field optical microscopy (s-SNOM) promises deterministic characterization of optical properties over a broad spectral range at the nanoscale. It allows ultrabroadband optical (0.5-3000 µm) nanoimaging, and nanospectroscopy with fine spatial (<10 nm), spectral (<1 cm^-1 ), and temporal (<10 fs) resolution. The history of s-SNOM is briefly introduced and recent advances which broaden the horizons of this technique in novel material research are summarized. In particular, this includes the pioneering efforts to study the nanoscale electrodynamic properties of plasmonic metamaterials, strongly correlated quantum materials, and polaritonic systems at room or cryogenic temperatures. Technical details, theoretical modeling, and new experimental methods are also discussed extensively, aiming to identify clear technology trends and unsolved challenges in this exciting field of research.

Electron-Driven In Situ Transmission Electron Microscopy of 2D Transition Metal Dichalcogenides and Their 2D Heterostructures

Investigations on monolayered transition metal dichalcogenides (TMDs) and TMD heterostructures have been steadily increasing over the past years due to their potential application in a wide variety of fields such as microelectronics, sensors, batteries, solar cells, and supercapacitors, among others. The present work focuses on the characterization of TMDs using transmission electron microscopy, which allows not only static atomic resolution but also investigations into the dynamic behavior of atoms within such materials. Herein, we present a body of recent research from the various techniques available in the transmission electron microscope to structurally and analytically characterize layered TMDs and briefly compare the advantages of TEM with other characterization techniques. Whereas both static and dynamic aspects are presented, special emphasis is given to studies on the electron-driven in situ dynamic aspects of these materials while under investigation in a transmission electron microscope. The collection of the presented results points to a future prospect where electron-driven nanomanipulation may be routinely used not only in the understanding of fundamental properties of TMDs but also in the electron beam engineering of nanocircuits and nanodevices.

Tuning carrier concentration in a superacid treated MoS2 monolayer

The effect of bis(trifluoromethane) sulfonimide (TFSI, superacid) treatment on the optical properties of MoS₂ monolayers is investigated by means of photoluminescence, reflectance contrast and Raman scattering spectroscopy employed in a broad temperature range. It is shown that when applied multiple times, the treatment results in progressive quenching of the trion emission/absorption and in the redshift of the neutral exciton emission/absorption associated with both the A and B excitonic resonances. Based on this evolution, a trion complex related to the B exciton in monolayer MoS₂ is unambiguously identified. A defect-related emission observed at low temperatures also disappears from the spectrum as a result of the treatment. Our observations are attributed to effective passivation of defects on the MoS₂ monolayer surface. The passivation reduces the carrier density, which in turn affects the out-of-plane electric field in the sample. The observed tuning of the carrier concentration strongly influences also the Raman scattering in the MoS₂ monolayer. An enhancement of Raman scattering at resonant excitation in the vicinity of the A neutral exciton is clearly seen for both the out-of-plane A′₁ and in-plane E′ modes. On the contrary, when the excitation is in resonance with a corresponding trion, the Raman scattering features become hardly visible. These results confirm the role of the excitonic charge state plays in the resonance effect of the excitation energy on the Raman scattering in transition metal dichalcogenides.

Photoemission spectroscopy study of structural defects in molybdenum disulfide (MoS2) grown by chemical vapor deposition (CVD)

The fingerprint of structural defects in CVD grown MoS2 was revealed by means of X-ray Photoelectron Spectroscopy (XPS). These defects can be partially healed by grafting thiol-functionalized molecules. The functionalization does not alter the semiconducting properties of MoS2 as confirmed by the photoluminescence spectra.

High-Performance Wafer-Scale MoS2 Transistors toward Practical Application

Atomic thin transition-metal dichalcogenides (TMDs) are considered as an emerging platform to build next-generation semiconductor devices. However, to date most devices are still based on exfoliated TMD sheets on a micrometer scale. Here, a novel chemical vapor deposition synthesis strategy by introducing multilayer (ML) MoS₂ islands to improve device performance is proposed. A four-probe method is applied to confirm that the contact resistance decreases by one order of magnitude, which can be attributed to a conformal contact by the extra amount of exposed edges from the ML-MoS₂ islands. Based on such continuous MoS₂ films synthesized on a 2 in. insulating substrate, a top-gated field effect transistor (FET) array is fabricated to explore key metrics such as threshold voltage (V _T ) and field effect mobility (μ_FE ) for hundreds of MoS₂ FETs. The statistical results exhibit a surprisingly low variability of these parameters. An average effective μ_FE of 70 cm² V^-1 s^-1 and subthreshold swing of about 150 mV dec^-1 are extracted from these MoS₂ FETs, which are comparable to the best top-gated MoS₂ FETs achieved by mechanical exfoliation. The result is a key step toward scaling 2D-TMDs into functional systems and paves the way for the future development of 2D-TMDs integrated circuits.

Unveiling Defect-Related Raman Mode of Monolayer WS2 via Tip-Enhanced Resonance Raman Scattering

Monolayer tungsten disulfide (WS₂) has emerged as an active material for optoelectronic devices due to its quantum yield of photoluminescence. Despite the enormous research about physical characteristics of monolayer WS₂, the defect-related Raman scattering has been rarely studied. Here, we report the correlation of topography and Raman scattering in monolayer WS₂ by using tip-enhanced resonance Raman spectroscopy and reveal defect-related Raman modes denoted as D and D' modes. We found that the sulfur vacancies introduce not only the red-shifted A_1g mode but also the D and D' modes by the density functional theory calculations. The observed defect-related Raman modes can be utilized to evaluate the quality of monolayer WS₂ and will be helpful to improve the performance of WS₂ optoelectronic devices.

Efficient Defect Healing of Transition Metal Dichalcogenides by Metallophthalocyanine

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted great attention as alternatives to graphene with semiconducting band gaps. Mono- or few-layer TMDCs can be prepared by various methods, but regardless of the fabrication methods [such as mechanical exfoliation and chemical vapor deposition (CVD)], TMDCs contain many structural defects, which significantly affect their physical properties and limit their performance in applications. Metallophthalocyanines (MPcs) are organic semiconductors, and as dopants, they are capable of modulating the optical and electrical properties of other semiconducting materials. Here, we report that besides the ability to modulate the optoelectronic properties of 2D TMDCs, MPc molecules can be used to heal defects and improve the physicochemical properties of TMDCs. Doping of planar MPc molecules to TMDCs is achieved by a simple solution dip-coating method and results in a significant improvement in the optical properties and thermal responses of CVD-grown TMDCs, even comparable to those of mechanically exfoliated counterparts. Study of carrier dynamics shows that the adsorption of MPc on the TMDC surface leads to the complete suppression of the mid-gap defect-induced absorption in TMDCs. Furthermore, MPc molecules with a large lateral size are found to effectively reduce the point defects in mechanically exfoliated TMDCs introduced during the preparation process. Our results not only clarify the optoelectronic modulation mechanism of chemical doping but also offer a simple method to control the nanosized defects in 2D TMDCs.

Near-field exciton imaging of chemically treated MoS2 monolayers

The exciton-dominated light emission of two-dimensional (2D) semiconductors is determined largely by the doping state and the formation of defects. Extensive studies have shown that chemical treatment critically modifies the doping state and defect state of chemical vapor deposition (CVD)-grown or exfoliated monolayer MoS2 (1L-MoS2), suggesting a promising possibility for engineering the optoelectronic properties of 2D semiconductors. However, chemical treatment inevitably modifies both the doping state and defect states, and their independent roles in the exciton emission of 1L-MoS2 have been difficult to study, significantly limiting the practical and reliable uses of chemical treatment to improve the optical properties of 1L-TMDs. Herein, we used near-field imaging and spectroscopy to investigate the effects of chemical treatment on the exciton emission of 1L-MoS2. CVD-grown 1L-MoS2 was treated with bis(trifluoromethane)-sulfonimide (TFSI) or 7,7,8,8-tetracyanoquinodimethane (TCNQ), and nanoscale maps of neutral exciton and trion emission before and after chemical treatment were obtained with 80 nm spatial resolution. A comparison of the local spatial and spectral compositions of neutral excitons and trions suggested that the p-doping effect of TFSI was especially strong around local defects, whereas electron depletion by TCNQ was spatially uniform. The specific reaction of TFSI to defect locations observed in our study provides the clue for the reason that TFSI is notably effective at improving the light emission of 1L-MoS2.

Edge optical scattering of two-dimensional materials

Rayleigh scattering has shown powerful abilities to study electron resonances of nanomaterials regardless of the specific shapes. In analogy to Rayleigh scattering, here we demonstrate that edge optical scattering from two-dimensional(2D) materials also has the similar advantage. Our result shows that, in visible spectral range, as long as the lateral size of a 2D sample is larger than 2 μm, the edge scattering intensity distribution of the high-angle scattering in k space is nearly independent of the lateral size and the shape of the 2D samples. The high-angle edge scattering spectra are purely determined by the intrinsic dielectric properties of the 2D materials. As an example, we experimentally verify this feature in single-layer MoS₂, in which A and B excitons are clearly detected in the edge scattering spectra, and the scattering images in k space and real space are consistent with our theoretical model. This study shows that the edge scattering is a highly practical and efficient method for optical studies of various 2D materials as well as thin films with clear edges.

Vacuum level dependent photoluminescence in chemical vapor deposition-grown monolayer MoS 2

The stronger photoluminescence (PL) in chemical vapor deposition (CVD) grown monolayer MoS₂ has been attributed to its high crystal quality compared with that in mechanically exfoliated (ME) crystal, which is contrary to the cognition that the ME crystal usually have better crystal quality than that of CVD grown one and it is expected with a better optical quality. In this report, the reason of abnormally strong PL spectra in CVD grown monolayer crystal is systematically investigated by studying the in-situ opto-electrical exploration at various environments for both of CVD and ME samples. High resolution transmission electron microscopy is used to investigate their crystal qualities. The stronger PL in CVD grown crystal is due to the high p-doping effect of adsorbates induced rebalance of exciton/trion emission. The first principle calculations are carried out to explore the interaction between adsorbates in ambient and defects sites in MoS₂, which is consistent to the experimental phenomenon and further confirm our proposed mechanisms.

Silver nanoflowers for single-particle SERS with 10 pM sensitivity

Surface-enhanced Raman scattering (SERS) has received considerable attention as a noninvasive optical sensing technique with ultrahigh sensitivity. While numerous types of metallic particles have been actively investigated as SERS substrates, the development of new SERS agents with high sensitivity and their reliable characterization are still required. Here we report the preparation and characterization of flower-shaped silver (Ag) nanoparticles that exhibit high-sensitivity single-particle SERS performance. Ag nanoflowers (NFs) with bud sizes in the range 220-620 nm were synthesized by the wet synthesis method. The densely packed nanoscale petals with thicknesses in the range 9-22 nm exhibit a large number of hot spots that significantly enhance their plasmonic activity. A single Ag NF particle (530-620 nm) can detect as little as 10^-11 M 4-mercaptobenzoic acid, and thus provides a sensitivity three orders of SERS magnitude greater than that of a spherical Ag nanoparticle. The analytical enhancement factors for single Ag NF particles were found to be as high as 8.0 × 10⁹, providing unprecedented high SERS detectivity at the single particle level. Here we present an unambiguous and systematic assessment of the SERS performances of the Ag NFs and demonstrate that they provide highly sensitive sensing platforms by single SERS particle.

Efficient Energy Transfer (EnT) in Pyrene- and Porphyrin-Based Mixed-Ligand Metal-Organic Frameworks

Designing and synthesizing the ordered light-harvesting systems, possessing complementary absorption and energy-transfer process between the chromophores, are essential steps to accomplish successful mimicking of the natural photosynthetic systems. Metal-organic frameworks (MOFs) can be considered as an ideal system to achieve this due to their highly ordered structure, superior synthetic versatility, and tailorable functionality. Herein, we have synthesized the new light-harvesting mixed-ligand MOFs (MLMs, MLM-1-3) via solvothermal reactions between a Zr₆ cluster and a mixture of appropriate ratio of 1,3,6,8-tetrakis(p-benzoic acid)pyrene and [5,10,15,20-tetrakis(4-carboxy-phenyl)porphyrinato]-Zn(II) ligands. The identical symmetry and connectivity of the two ligands of the MLMs was the key parameter of successful synthesis as a single MOF form, and the ample overlap between the emission spectrum of pyrene and the absorption spectrum of porphyrin provided the ideal platform to design an efficient-energy transfer (EnT) process within the MLMs. We obtained the nanoscale maps of the fluorescence intensities and lifetimes of microsize MLM grains for unambiguous visualization of EnT phenomena occurring between two ligands in MLMs. Moreover, due to complementary absorption and energy transfer between the two ligands in the MLMs, our MLMs performed as superior photoinduced singlet-oxygen generators, verifying the enhanced light-harvesting properties of the pyrene- and porphyrin-based MLMs.

The optical response of monolayer, few-layer and bulk tungsten disulfide

We present a comprehensive optical study of thin flakes of tungsten disulfide (WS₂) with thickness ranging from mono- to octalayer and in the bulk limit. It is shown that the optical band-gap absorption of monolayer WS₂ is governed by competing resonances arising from one neutral and two distinct negatively charged excitons whose contributions to the overall absorption of light vary as a function of temperature and carrier concentration. The photoluminescence response of monolayer WS₂ is found to be largely dominated by disorder/impurity- and/or phonon-assisted recombination processes. The indirect band-gap luminescence in multilayer WS₂ turns out to be a phonon-mediated process whose energy evolution with the number of layers surprisingly follows a simple model of a two-dimensional confinement. The energy position of the direct band-gap response (A and B resonances) is only weakly dependent on the layer thickness, which underlines an approximate compensation of the effect of the reduction of the exciton binding energy by the shrinkage of the apparent band gap. The A-exciton absorption-type spectra in multilayer WS₂ display a non-trivial fine structure which results from the specific hybridization of the electronic states in the vicinity of the K-point of the Brillouin zone. The effects of temperature on the absorption-like and photoluminescence spectra of various WS₂ layers are also quantified.

Optically active charge transfer in hybrids of Alq3 nanoparticles and MoS2 monolayer

Organic/inorganic hybrid structures have been widely studied because of their enhanced physical and chemical properties. Monolayers of transition metal dichalcogenides (1L-TMDs) and organic nanoparticles can provide a hybridization configuration between zero- and two-dimensional systems with the advantages of convenient preparation and strong interface interaction. Here, we present such a hybrid system made by dispersing π-conjugated organic (tris (8-hydroxyquinoline) aluminum(III)) (Alq₃) nanoparticles (NPs) on 1L-MoS₂. Hybrids of Alq₃ NP/1L-MoS₂ exhibited a two-fold increase in the photoluminescence of Alq₃ NPs on 1L-MoS₂ and the n-doping effect of 1L-MoS₂, and these spectral and electronic modifications were attributed to the charge transfer between Alq₃ NPs and 1L-MoS₂. Our results suggested that a hybrid of organic NPs/1L-TMD can offer a convenient platform to study the interface interactions between organic and inorganic nano objects and to engineer optoelectronic devices with enhanced performance.

Centimeter-Scale CVD Growth of Highly Crystalline Single-Layer MoS2 Film with Spatial Homogeneity and the Visualization of Grain Boundaries

MoS₂ monolayer attracts considerable attention due to its semiconducting nature with a direct bandgap which can be tuned by various approaches. Yet a controllable and low-cost method to produce large-scale, high-quality, and uniform MoS₂ monolayer continuous film, which is of crucial importance for practical applications and optical measurements, remains a great challenge. Most previously reported MoS₂ monolayer films had limited crystalline sizes, and the high density of grain boundaries inside the films greatly affected the electrical properties. Herein, we demonstrate that highly crystalline MoS₂ monolayer film with spatial size up to centimeters can be obtained via a facile chemical vapor deposition method with solid-phase precursors. This growth strategy contains selected precursor and controlled diffusion rate, giving rise to the high quality of the film. The well-defined grain boundaries inside the continuous film, which are invisible under an optical microscope, can be clearly detected in photoluminescence mapping and atomic force microscope phase images, with a low density of ∼0.04 μm^-1. Transmission electron microscopy combined with selected area electron diffraction measurements further confirm the high structural homogeneity of the MoS₂ monolayer film with large crystalline sizes. Electrical measurements show uniform and promising performance of the transistors made from the MoS₂ monolayer film. The carrier mobility remains high at large channel lengths. This work opens a new pathway toward electronic and optical applications, and fundamental growth mechanism as well, of the MoS₂ monolayer.

Simple Chemical Treatment to n-Dope Transition-Metal Dichalcogenides and Enhance the Optical and Electrical Characteristics

The optical and electrical properties of monolayer transition-metal dichalcogenides (1L-TMDs) are critically influenced by two dimensionally confined exciton complexes. Although extensive studies on controlling the optical properties of 1L-TMDs through external doping or defect engineering have been carried out, the effects of excess charges, defects, and the populations of exciton complexes on the light emission of 1L-TMDs are not yet fully understood. Here, we present a simple chemical treatment method for n-dope 1L-TMDs, which also enhances their optical and electrical properties. We show that dipping 1Ls of MoS₂, WS₂, and WSe₂, whether exfoliated or grown by chemical vapor deposition, into methanol for several hours can increase the electron density and also can reduce the defects, resulting in the enhancement of their photoluminescence, light absorption, and the carrier mobility. This methanol treatment was effective for both n- and p-type 1L-TMDs, suggesting that the surface restructuring around structural defects by methanol is responsible for the enhancement of optical and electrical characteristics. Our results have revealed a simple process for external doping that can enhance both the optical and electrical properties of 1L-TMDs and help us understand how the exciton emission in 1L-TMDs can be modulated by chemical treatments.

Manipulation of local optical properties and structures in molybdenum-disulfide monolayers using electric field-assisted near-field techniques

Remarkable optical properties, such as quantum light emission and large optical nonlinearity, have been observed in peculiar local sites of transition metal dichalcogenide monolayers, and the ability to tune such properties is of great importance for their optoelectronic applications. For that purpose, it is crucial to elucidate and tune their local optical properties simultaneously. Here, we develop an electric field-assisted near-field technique. Using this technique we can clarify and tune the local optical properties simultaneously with a spatial resolution of approximately 100 nm due to the electric field from the cantilever. The photoluminescence at local sites in molybdenum-disulfide (MoS₂) monolayers is reversibly modulated, and the inhomogeneity of the charge neutral points and quantum yields is suggested. We successfully etch MoS₂ crystals and fabricate nanoribbons using near-field techniques in combination with an electric field. This study creates a way to tune the local optical properties and to freely design the structural shapes of atomic monolayers using near-field optics.

Near-field spectral mapping of individual exciton complexes of monolayer WS2 correlated with local defects and charge population

Exciton transitions are mostly responsible for the optical properties of transition metal dichalcogenide monolayers (1L-TMDs). Extensive studies of optical and structural characterization indicated that the presence of local structural defects and charge population critically influence the exciton emissions of 1L-TMDs. However, due to large variations of sample and experimental conditions, the exact mechanism of the exciton emission influenced by local structural defects and charge population is not clearly understood. In this work by using near-field scanning optical imaging and spectroscopy, we directly visualized spatially- and spectrally-resolved emission profiles of excitons, trions and defect bound excitons in CVD-grown monolayer tungsten disulfide (1L-WS₂) with ∼70 nm spatial resolution. We found that exciton emission is spatially uniform while emission of trions and defect bound excitons was strongly modulated by the presence of structural features such as defects and wrinkles. We also visually observe a strong correlation between local charge accumulation and the trion formation upon increased photo-excitation.

Simultaneous Hosting of Positive and Negative Trions and the Enhanced Direct Band Emission in MoSe2/MoS2 Heterostacked Multilayers

Heterostacking of layered transition-metal dichalcogenide (LTMD) monolayers (1Ls) offers a convenient way of designing two-dimensional exciton systems. Here we demonstrate the simultaneous hosting of positive trions and negative trions in heterobilayers made by vertically stacking 1L MoSe2 and 1L MoS2. The charge transfer occurring between the 1Ls of MoSe2 and MoS2 converted the polarity of trions in 1L MoSe2 from negative to positive, resulting in the presence of positive trions in the 1L MoSe2 and negative trions in the 1L MoS2 of the same heterostacked bilayer. Significantly enhanced MoSe2 photoluminescence (PL) in the heterostacked bilayers compared to the PL of 1L MoSe2 alone suggests that, unlike other previously reported heterostacked bilayers, direct band transition of 1L MoSe2 in heterobilayer was enhanced after the vertical heterostacking. Moreover, by inserting hexagonal BN monolayers between 1L MoSe2 and 1L MoS2, we were able to adjust the charge transfer to maximize the MoSe2 PL of the heteromultilayers and have achieved a 9-fold increase of the PL emission. The enhanced optical properties of our heterostacked LTMDs suggest the exciting possibility of designing LTMD structures that exploit the superior optical properties of 1L LTMDs.

Gap States at Low-Angle Grain Boundaries in Monolayer Tungsten Diselenide

Two-dimensional (2D) transition metal dichalcogenides (TMDs) have revealed many novel properties of interest to future device applications. In particular, the presence of grain boundaries (GBs) can significantly influence the material properties of 2D TMDs. However, direct characterization of the electronic properties of the GB defects at the atomic scale remains extremely challenging. In this study, we employ scanning tunneling microscopy and spectroscopy to investigate the atomic and electronic structure of low-angle GBs of monolayer tungsten diselenide (WSe2) with misorientation angles of 3-6°. Butterfly features are observed along the GBs, with the periodicity depending on the misorientation angle. Density functional theory calculations show that these butterfly features correspond to gap states that arise in tetragonal dislocation cores and extend to distorted six-membered rings around the dislocation core. Understanding the nature of GB defects and their influence on transport and other device properties highlights the importance of defect engineering in future 2D device fabrication.

Nanoscale mapping of excitonic processes in single-layer MoS2 using tip-enhanced photoluminescence microscopy

In two-dimensional (2D) semiconductors, photoluminescence originating from recombination processes involving neutral electron-hole pairs (excitons) and charged complexes (trions) is strongly affected by the localized charge transfer due to inhomogeneous interactions with the local environment and surface defects. Herein, we demonstrate the first nanoscale mapping of excitons and trions in single-layer MoS2 using the full spectral information obtained via tip-enhanced photoluminescence (TEPL) microscopy along with tip-enhanced Raman spectroscopy (TERS) imaging of a 2D flake. Finally, we show the mapping of the PL quenching centre in single-layer MoS2 with an unprecedented spatial resolution of 20 nm. In addition, our research shows that unlike in aperture-scanning near field microscopy, preferential exciton emission mapping at the nanoscale using TEPL and Raman mapping using TERS can be obtained simultaneously using this method that can be used to correlate the structural and excitonic properties.

Hybrid Tip-Enhanced Nanospectroscopy and Nanoimaging of Monolayer WSe2 with Local Strain Control

Many classes of two-dimensional (2D) materials have emerged as potential platforms for novel electronic and optical devices. However, their physical properties are strongly influenced by nanoscale heterogeneities in the form of edges, twin boundaries, and nucleation sites. Using combined tip-enhanced Raman scattering and photoluminescence (PL) nanospectroscopy and nanoimaging, we study the associated effects on the excitonic properties in monolayer WSe2 grown by physical vapor deposition. With ∼15 nm spatial resolution, we resolve nanoscale correlations of PL spectral intensity and shifts with crystal edges and internal twin boundaries associated with the expected exciton diffusion length. Through an active atomic force tip interaction we can control the crystal strain on the nanoscale and tune the local bandgap in reversible (up to 24 meV shift) and irreversible (up to 48 meV shift) fashion. This allows us to distinguish the effect of strain from the dominant influence of defects on the PL modification at the different structural heterogeneities. Hybrid nano-optical spectroscopy and imaging with nanomechanical strain control thus enables the systematic study of the coupling of structural and mechanical degrees of freedom to the nanoscale electronic and optical properties in layered 2D materials.

Biexciton Emission from Edges and Grain Boundaries of Triangular WS₂ Monolayers

Monolayer tungsten disulfides (WS2) constitute a high quantum yield two-dimensional (2D) system, and can be synthesized on a large area using chemical vapor deposition (CVD), suggesting promising nanophotonics applications. However, spatially nonuniform photoluminescence (PL) intensities and peak wavelengths observed in single WS2 grains have puzzled researchers, with the origins of variation in relative contributions of excitons, trions, and biexcitons to the PL emission not well understood. Here, we present nanoscale PL and Raman spectroscopy images of triangular CVD-grown WS2 monolayers of different sizes, with these images obtained under different temperatures and values of excitation power. Intense PL emissions were observed around the edges of individual WS2 grains and the grain boundaries between partly merged WS2 grains. The predominant origin of the main PL emission from these regions changed from neutral excitons to trions and biexcitons with increasing laser excitation power, with biexcitons completely dominating the PL emission for the high-power condition. The intense PL emission and the preferential formation of biexcitons in the edges and grain boundaries of monolayer WS2 were attributed to larger population of charge carriers caused by the excessive incorporation of growth promoters during the CVD, suggesting positive roles of excessive carriers in the PL efficiency of TMD monolayers. Our comprehensive nanoscale spectroscopic investigation sheds light on the dynamic competition between exciton complexes occurring in monolayer WS2, suggesting a rich variety of ways to engineer new nanophotonic functions using 2D transition metal dichalcogenide monolayers.