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First-principles calculations to investigate electronic structures and magnetic regulation of non-metallic elements doped BP with point defects. J Mol Graph Model 2022; 118:108370. [DOI: 10.1016/j.jmgm.2022.108370] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/10/2022] [Revised: 10/28/2022] [Accepted: 11/01/2022] [Indexed: 11/06/2022]
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Xu B, Zhang P, Zhu J, Liu Z, Eichler A, Zheng XQ, Lee J, Dash A, More S, Wu S, Wang Y, Jia H, Naik A, Bachtold A, Yang R, Feng PXL, Wang Z. Nanomechanical Resonators: Toward Atomic Scale. ACS NANO 2022; 16:15545-15585. [PMID: 36054880 PMCID: PMC9620412 DOI: 10.1021/acsnano.2c01673] [Citation(s) in RCA: 20] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/11/2022] [Accepted: 08/12/2022] [Indexed: 06/15/2023]
Abstract
The quest for realizing and manipulating ever smaller man-made movable structures and dynamical machines has spurred tremendous endeavors, led to important discoveries, and inspired researchers to venture to previously unexplored grounds. Scientific feats and technological milestones of miniaturization of mechanical structures have been widely accomplished by advances in machining and sculpturing ever shrinking features out of bulk materials such as silicon. With the flourishing multidisciplinary field of low-dimensional nanomaterials, including one-dimensional (1D) nanowires/nanotubes and two-dimensional (2D) atomic layers such as graphene/phosphorene, growing interests and sustained effort have been devoted to creating mechanical devices toward the ultimate limit of miniaturization─genuinely down to the molecular or even atomic scale. These ultrasmall movable structures, particularly nanomechanical resonators that exploit the vibratory motion in these 1D and 2D nano-to-atomic-scale structures, offer exceptional device-level attributes, such as ultralow mass, ultrawide frequency tuning range, broad dynamic range, and ultralow power consumption, thus holding strong promises for both fundamental studies and engineering applications. In this Review, we offer a comprehensive overview and summary of this vibrant field, present the state-of-the-art devices and evaluate their specifications and performance, outline important achievements, and postulate future directions for studying these miniscule yet intriguing molecular-scale machines.
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Affiliation(s)
- Bo Xu
- Institute
of Fundamental and Frontier Sciences, University
of Electronic Science and Technology of China, Chengdu610054, China
| | - Pengcheng Zhang
- University
of Michigan−Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai200240, China
| | - Jiankai Zhu
- Institute
of Fundamental and Frontier Sciences, University
of Electronic Science and Technology of China, Chengdu610054, China
| | - Zuheng Liu
- University
of Michigan−Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai200240, China
| | | | - Xu-Qian Zheng
- Department
of Electrical and Computer Engineering, Herbert Wertheim College of
Engineering, University of Florida, Gainesville, Florida32611, United States
- College
of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing210023, China
| | - Jaesung Lee
- Department
of Electrical and Computer Engineering, Herbert Wertheim College of
Engineering, University of Florida, Gainesville, Florida32611, United States
- Department
of Electrical and Computer Engineering, University of Texas at El Paso, El Paso, Texas79968, United States
| | - Aneesh Dash
- Centre
for
Nano Science and Engineering, Indian Institute
of Science, Bangalore560012, Karnataka, India
| | - Swapnil More
- Centre
for
Nano Science and Engineering, Indian Institute
of Science, Bangalore560012, Karnataka, India
| | - Song Wu
- Institute
of Fundamental and Frontier Sciences, University
of Electronic Science and Technology of China, Chengdu610054, China
| | - Yanan Wang
- Department
of Electrical and Computer Engineering, Herbert Wertheim College of
Engineering, University of Florida, Gainesville, Florida32611, United States
- Department
of Electrical and Computer Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska68588, United States
| | - Hao Jia
- Shanghai
Institute of Microsystem and Information Technology, Chinese Academy
of Sciences, Shanghai200050, China
| | - Akshay Naik
- Centre
for
Nano Science and Engineering, Indian Institute
of Science, Bangalore560012, Karnataka, India
| | - Adrian Bachtold
- ICFO-Institut
de Ciencies Fotoniques, The Barcelona Institute
of Science and Technology, Castelldefels, Barcelona08860, Spain
| | - Rui Yang
- University
of Michigan−Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai200240, China
- School of
Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai200240, China
| | - Philip X.-L. Feng
- Department
of Electrical and Computer Engineering, Herbert Wertheim College of
Engineering, University of Florida, Gainesville, Florida32611, United States
| | - Zenghui Wang
- Institute
of Fundamental and Frontier Sciences, University
of Electronic Science and Technology of China, Chengdu610054, China
- State
Key Laboratory of Electronic Thin Films and Integrated Devices, University
of Electronic Science and Technology of China, Chengdu610054, China
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Yang R, Yousuf SMEH, Lee J, Zhang P, Liu Z, Feng PXL. Raman Spectroscopic Probe for Nonlinear MoS 2 Nanoelectromechanical Resonators. NANO LETTERS 2022; 22:5780-5787. [PMID: 35792575 DOI: 10.1021/acs.nanolett.2c01250] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Resonant nanoelectromechanical systems (NEMS) enabled by two-dimensional (2D) semiconductors have been actively explored and engineered for making ultrascaled transducers toward applications in ultralow-power signal processing, communication, and sensing. Although the transduction of miniscule resonant motions has been achieved by low-noise optical or electronic techniques, direct probing of strain in vibrating 2D semiconductor membranes and the interplay between the spectroscopic and mechanical properties are still largely unexplored. Here, we experimentally demonstrate dynamical phonon softening in atomically thin molybdenum disulfide (MoS2) NEMS resonators by directly coupling Raman spectroscopy with optical interferometry resonance motion detection. In single-layer, bilayer, and trilayer (1L to 3L) MoS2 circular membrane NEMS resonators, we show that high-amplitude nonlinear resonances can enhance the Raman signal amplitude, as well as introduce Raman modes softening up to 0.8 cm-1. These results shall pave the way for engineering the coupling and control between collective mechanical vibrations and Raman modes of the constituent crystals in 2D transducers.
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Affiliation(s)
- Rui Yang
- Department of Electrical Engineering and Computer Science, Case School of Engineering, Case Western Reserve University, Cleveland, Ohio 44106, United States
- University of Michigan - Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240, China
- School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - S M Enamul Hoque Yousuf
- Department of Electrical and Computer Engineering, Herbert Wertheim College of Engineering, University of Florida, Gainesville, Florida 32611, United States
| | - Jaesung Lee
- Department of Electrical Engineering and Computer Science, Case School of Engineering, Case Western Reserve University, Cleveland, Ohio 44106, United States
- Department of Electrical and Computer Engineering, Herbert Wertheim College of Engineering, University of Florida, Gainesville, Florida 32611, United States
| | - Pengcheng Zhang
- University of Michigan - Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Zuheng Liu
- University of Michigan - Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Philip X-L Feng
- Department of Electrical Engineering and Computer Science, Case School of Engineering, Case Western Reserve University, Cleveland, Ohio 44106, United States
- Department of Electrical and Computer Engineering, Herbert Wertheim College of Engineering, University of Florida, Gainesville, Florida 32611, United States
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Zhang P, Jia Y, Xie M, Liu Z, Shen S, Wei J, Yang R. Strain-Modulated Dissipation in Two-Dimensional Molybdenum Disulfide Nanoelectromechanical Resonators. ACS NANO 2022; 16:2261-2270. [PMID: 35107966 DOI: 10.1021/acsnano.1c08380] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Resonant nanoelectromechanical systems (NEMS) based on two-dimensional (2D) materials such as molybdenum disulfide (MoS2) are interesting for highly sensitive mass, force, photon, or inertial transducers, as well as for fundamental research approaching the quantum limit, by leveraging the mechanical degree of freedom in these atomically thin materials. For these mechanical resonators, the quality factor (Q) is essential, yet the mechanism and tuning methods for energy dissipation in 2D NEMS resonators have not been fully explored. Here, we demonstrate that by tuning static strain and vibration-induced strain in suspended MoS2 using gate voltages, we can effectively tune the Q in 2D MoS2 NEMS resonators. We further show that for doubly clamped resonators, the Q increases with larger DC gate voltage, while fully clamped drumhead resonators show the opposite trend. Using DC gate voltages, we can tune the Q by ΔQ/Q = 448% for fully clamped resonators, and by ΔQ/Q = 369% for doubly clamped resonators. We develop the strain-modulated dissipation model for these 2D NEMS resonators, which is verified against our measurement data for 8 fully clamped resonators and 7 doubly clamped resonators. We find that static tensile strain decreases dissipation while vibration-induced strain increases dissipation, and the actual dependence of Q on DC gate voltage depends on the competition between these two effects, which is related to the device boundary condition. Such strain dependence of Q is useful for optimizing the resonance linewidth in 2D NEMS resonators toward low-power, ultrasensitive, and frequency-selective devices for sensing and signal processing.
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Affiliation(s)
- Pengcheng Zhang
- University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Yueyang Jia
- University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Maosong Xie
- University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Zuheng Liu
- University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Sheng Shen
- University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Jianyong Wei
- University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Rui Yang
- University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240, China
- School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
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Jia H, Yang R, Nguyen AE, Alvillar SN, Empante T, Bartels L, Feng PXL. Large-scale arrays of single- and few-layer MoS2 nanomechanical resonators. NANOSCALE 2016; 8:10677-85. [PMID: 27150738 DOI: 10.1039/c6nr01118g] [Citation(s) in RCA: 23] [Impact Index Per Article: 2.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2023]
Abstract
We report the fabrication of large-scale arrays of suspended molybdenum disulfide (MoS2) atomic layers, as two-dimensional (2D) MoS2 nanomechanical resonators. We employ a water-assisted lift-off process to release chemical vapor deposited (CVD) MoS2 atomic layers from a donor substrate, followed by an all-dry transfer onto microtrench arrays. The resultant large arrays of suspended single- and few-layer MoS2 drumhead resonators (0.5-2 μm in diameter) offer fundamental resonances (f0) in the very high frequency (VHF) band (up to ∼120 MHz) and excellent figures-of-merit up to f0 × Q ≈ 3 × 10(10) Hz. A stretched circular diaphragm model allows us to estimate low pre-tension levels of typically ∼15 mN m(-1) in these devices. Compared to previous approaches, our transfer process features high yield and uniformity with minimal liquid and chemical exposure (only involving DI water), resulting in high-quality MoS2 crystals and exceptional device performance and homogeneity; and our process is readily applicable to other 2D materials.
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Affiliation(s)
- Hao Jia
- Department of Electrical Engineering and Computer Science, Case School of Engineering, Case Western Reserve University, 10900 Euclid Avenue, Cleveland, OH 44106, USA.
| | - Rui Yang
- Department of Electrical Engineering and Computer Science, Case School of Engineering, Case Western Reserve University, 10900 Euclid Avenue, Cleveland, OH 44106, USA.
| | - Ariana E Nguyen
- Department of Chemistry and Material Science & Engineering Program, University of California, Riverside, 900 University Avenue, Riverside, CA 92521, USA
| | - Sahar Naghibi Alvillar
- Department of Chemistry and Material Science & Engineering Program, University of California, Riverside, 900 University Avenue, Riverside, CA 92521, USA
| | - Thomas Empante
- Department of Chemistry and Material Science & Engineering Program, University of California, Riverside, 900 University Avenue, Riverside, CA 92521, USA
| | - Ludwig Bartels
- Department of Chemistry and Material Science & Engineering Program, University of California, Riverside, 900 University Avenue, Riverside, CA 92521, USA
| | - Philip X-L Feng
- Department of Electrical Engineering and Computer Science, Case School of Engineering, Case Western Reserve University, 10900 Euclid Avenue, Cleveland, OH 44106, USA.
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