Doping two-dimensional materials: ultra-sensitive sensors, band gap tuning and ferromagnetic monolayers

Antiferromagnetism in GaS monolayer doped with TM-TM atom pairs (TM = V, Cr, Mn, and Fe)

In this work, structural modification at Ga sites of the gallium sulfide (GaS) monolayer is explored to create new two-dimensional (2D) materials towards spintronic applications. GaS monolayer is a non-magnetic indirect-gap semiconductor material with an energy gap of 2.38 (3.27) eV as calculated using the PBE(HSE06) functional. Half-metallicity is induced in this 2D material by creating a single Ga vacancy, where S atoms around the defect site produce mainly the magnetic properties with a total magnetic moment of 1.00μB. In contrast, the non-magnetic nature is preserved under the effects of a pair of Ga vacancies, which metallize the monolayer. V, Mn, and Fe doping leads to the emergence of the diluted magnetic semiconductor nature, while doping with Cr creates a new 2D half-metallic material from the GaS monolayer. In these cases, total magnetic moments between 2.00 and 5.00μB are obtained and the 3d orbital of transition metal (TM) impurities mainly induces the system magnetism. In addition, the effects of doping with a pair of TM (pTM) atoms are also investigated, in which the antiferromagnetism is found to be stable rather than the ferromagnetism to follow the Pauli exclusion principle. Significant magnetization of the GaS monolayer is also achieved with zero total magnetic moment because of the structural mirror-symmetry. pV-, pMn-, and pFe-doped systems are antiferromagnetic semiconductor materials with energy gaps of 1.06, 1.90, and 1.84 eV, respectively. Meanwhile, the monolayer is metallized by doping with a pCr pair. The results presented herein indicate that the defective and doped GaS monolayers are prospective 2D candidates for spintronic applications - which are hindered for the pristine GaS monolayer because of the absence of intrinsic magnetism.

Artificial Intelligence Meets Flexible Sensors: Emerging Smart Flexible Sensing Systems Driven by Machine Learning and Artificial Synapses

The recent wave of the artificial intelligence (AI) revolution has aroused unprecedented interest in the intelligentialize of human society. As an essential component that bridges the physical world and digital signals, flexible sensors are evolving from a single sensing element to a smarter system, which is capable of highly efficient acquisition, analysis, and even perception of vast, multifaceted data. While challenging from a manual perspective, the development of intelligent flexible sensing has been remarkably facilitated owing to the rapid advances of brain-inspired AI innovations from both the algorithm (machine learning) and the framework (artificial synapses) level. This review presents the recent progress of the emerging AI-driven, intelligent flexible sensing systems. The basic concept of machine learning and artificial synapses are introduced. The new enabling features induced by the fusion of AI and flexible sensing are comprehensively reviewed, which significantly advances the applications such as flexible sensory systems, soft/humanoid robotics, and human activity monitoring. As two of the most profound innovations in the twenty-first century, the deep incorporation of flexible sensing and AI technology holds tremendous potential for creating a smarter world for human beings.

Polarization-tunable interfacial properties in monolayer-MoS2 transistors integrated with ferroelectric BiAlO3(0001) polar surfaces

With the explosion of data-centric applications, new in-memory computing technologies, based on nonvolatile memory devices, have become competitive due to their merged logic-memory functionalities. Herein, employing first-principles quantum transport simulation, we theoretically investigate for the first time the electronic and contact properties of two types of monolayer (ML)-MoS2 ferroelectric field-effect transistors (FeFETs) integrated with ferroelectric BiAlO3(0001) (BAO(0001)) polar surfaces. Our study finds that the interfacial properties of the investigated partial FeFET devices are highly tunable by switching the electric polarization of the ferroelectric BAO(0001) dielectric. Specifically, the transition from quasi-Ohmic to the Schottky contact, as well as opposite contact polarity of respective n-type and p-type Schottky contact under two polarization states can be obtained, suggesting their superior performance metrics in terms of nonvolatile information storage. In addition, due to the feature of (quasi-)Ohmic contact in some polarization states, the explored FeFET devices, even when operating in the regular field-effect transistor (FET) mode, can be extremely significant in realizing a desirable low threshold voltage and interfacial contact resistance. In conjunction with the formed van der Waals (vdW) interfaces in ML-MoS2/ferroelectric systems with an interlayer, the proposed FeFETs are expected to provide excellent device performance with regard to cycling endurance and memory density.

Oxygen evolution reaction on MoS2/C rods-robust and highly active electrocatalyst

Recently, water oxidation or oxygen evolution reaction (OER) in electrocatalysis has attracted huge attention due to its prime role in water splitting, rechargeable metal-air batteries, and fuel cells. Here, we demonstrate a facile and scalable fabrication method of a rod-like structure composed of molybdenum disulfide and carbon (MoS2/C) from parent 2D MoS2. This novel composite, induced via the chemical vapor deposition (CVD) process, exhibits superior oxygen evolution performance (overpotential = 132 mV at 10 mA cm-2and Tafel slope = 55.6 mV dec-1) in an alkaline medium. Additionally, stability tests of the obtained structures at 10 mA cm-2during 10 h followed by 20 mA cm-2during 5 h and 50 mA cm-2during 2.5 h have been performed and clearly prove that MoS2/C can be successfully used as robust noble-metal-free electrocatalysts. The promoted activity of the rods is ascribed to the abundance of active surface (ECSA) of the catalyst induced due to the curvature effect during the reshaping of the composite from 2D precursor (MoS2) in the CVD process. Moreover, the presence of Fe species contributes to the observed excellent OER performance. FeOOH, Fe2O3, and Fe3O4are known to possess favorable electrocatalytic properties, including high catalytic activity and stability, which facilitate the electrocatalytic reaction. Additionally, Fe-based species like Fe7C3and FeMo2S5offer synergistic effects with MoS2, leading to improved catalytic activity and durability due to their unique electronic structure and surface properties. Additionally, turnover frequency (TOF) (58 1/s at the current density of 10 mA cm-2), as a direct indicator of intrinsic activity, indicates the efficiency of this catalyst in OER. Based onex situanalyzes (XPS, XRD, Raman) of the electrocatalyst the possible reaction mechanism is explored and discussed in great detail showing that MoS2, carbon, and iron oxide are the main active species of the reaction.

Synthesis of mono- and few-layered n-type WSe2 from solid state inorganic precursors

Tuning the charge transport properties of two-dimensional transition metal dichalcogenides (TMDs) is pivotal to their future device integration in post-silicon technologies. To date, co-doping of TMDs during growth still proves to be challenging, and the synthesis of doped WSe2, an otherwise ambipolar material, has been mainly limited to p-doping. Here, we demonstrate the synthesis of high-quality n-type monolayered WSe2 flakes using a solid-state precursor for Se, zinc selenide. n-Type transport has been reported with prime electron mobilities of up to 10 cm2 V-1 s-1. We also demonstrate the tuneability of doping to p-type transport with hole mobilities of 50 cm2 V-1 s-1 after annealing in air. n-Doping has been attributed to the presence of Zn adatoms on the WSe2 flakes as revealed by X-ray photoelectron spectroscopy (XPS), spatially resolved time of flight secondary ion mass spectroscopy (SIMS) and angular dark-field scanning transmission electron microscopy (AD-STEM) characterization of WSe2 flakes. Monolayer WSe2 flakes exhibit a sharp photoluminescence (PL) peak at room temperature and highly uniform emission across the entire flake area, indicating a high degree of crystallinity of the material. This work provides new insight into the synthesis of TMDs with charge carrier control, to pave the way towards post-silicon electronics.

Microwave Facilitated Covalent Organic Framework/Transition Metal Dichalcogenide Heterostructures

Organic/inorganic heterostructures present a versatile platform for creating materials with new functionalities and hybrid properties. In particular, junctions between two dimensional materials have demonstrated utility in next generation electronic, optical, and optoelectronic devices. This work pioneers a microwave facilitated synthesis process to readily incorporate few-layer covalent organic framework (COF) films onto monolayer transition metal dichalcogenides (TMDC). Preferential microwave excitation of the monolayer TMDC flakes result in selective attachment of COFs onto the van der Waals surface with film thicknesses between 1 and 4 nm. The flexible process is extended to multiple TMDCs (MoS₂, MoSe₂, MoSSe) and several well-known COFs (TAPA-PDA COF, TPT-TFA-COF, and COF-5). Photoluminescence studies reveal a power-dependent defect formation in the TMDC layer, which facilitates electronic coupling between the materials at higher TMDC defect densities. This coupling results in a shift in the A-exciton peak location of MoSe₂, with a red or blue shift of 50 or 19 meV, respectively, depending upon the electron donating character of the few-layer COF films. Moreover, optoelectronic devices fabricated from the COF-5/TMDC heterostructure present an opportunity to tune the PL intensity and control the interaction dynamics within inorganic/organic heterostructures.

Two-Dimensional Field-Effect Transistor Sensors: The Road toward Commercialization

The evolutionary success in information technology has been sustained by the rapid growth of sensor technology. Recently, advances in sensor technology have promoted the ambitious requirement to build intelligent systems that can be controlled by external stimuli along with independent operation, adaptivity, and low energy expenditure. Among various sensing techniques, field-effect transistors (FETs) with channels made of two-dimensional (2D) materials attract increasing attention for advantages such as label-free detection, fast response, easy operation, and capability of integration. With atomic thickness, 2D materials restrict the carrier flow within the material surface and expose it directly to the external environment, leading to efficient signal acquisition and conversion. This review summarizes the latest advances of 2D-materials-based FET (2D FET) sensors in a comprehensive manner that contains the material, operating principles, fabrication technologies, proof-of-concept applications, and prototypes. First, a brief description of the background and fundamentals is provided. The subsequent contents summarize physical, chemical, and biological 2D FET sensors and their applications. Then, we highlight the challenges of their commercialization and discuss corresponding solution techniques. The following section presents a systematic survey of recent progress in developing commercial prototypes. Lastly, we summarize the long-standing efforts and prospective future development of 2D FET-based sensing systems toward commercialization.

Janus 2D materials via asymmetric molecular functionalization

Janus two-dimensional materials (2DMs) are a novel class of 2DMs in which the two faces of the material are either asymmetrically functionalized or are exposed to a different local environment. The diversity of the properties imparted to the two opposing sides enables the design of new multifunctional materials for applications in a broad variety of fields including opto-electronics, energy storage, and catalysis. In this perspective, we summarize the most enlightening experimental methods for the asymmetric chemical functionalization of 2DMs with tailored made (macro)molecules by means of a supratopic binding (one side) or antaratopic binding (two sides) process. We describe the emergence of unique electrical and optical characteristics resulting from the asymmetric dressing of the two surfaces. Representative examples of Janus 2DMs towards bandgap engineering, enhanced photoresponse and photoluminescence are provided. In addition, examples of Janus 2DMs for real applications such as energy storage (batteries and supercapacitors) and generation (photovoltaics), opto-electronics (field-effect transistors and photodetectors), catalysis, drug delivery, self-healing materials, chemical sensors and selective capture and separation of small molecules are also described. Finally, we discuss the future directions, challenges, and opportunities to expand the frontiers of Janus 2DMs towards technologies with potential impact in environmental science and biomedical applications.

Synergically engineering defect and interlayer in SnS2 for enhanced room-temperature NO2 sensing

Defect and interlayer engineering are considered as two promising strategies to alter the electronic structures of sensing materials for improved gas sensing properties. Herein, ethylene glycol intercalated Al-doped SnS₂ (EG-Al-SnS₂) featuring Al doping, sulfur (S) vacancies, and an expanded interlayer spacing was prepared and developed as an active NO₂ sensing material. Compared to the pristine SnS₂ with failure in detecting NO₂ at room temperature, the developed EG-Al-SnS₂ exhibited a better conductivity, which was beneficial for realizing the room-temperature NO₂ sensing. As a result, a high sensing response of 410% toward 2 ppm NO₂ was achieved at room temperature by using the 3% EG-Al-SnS₂ as the sensing material. Such outstanding sensing performance was attributed to the enhanced electronic interaction of NO₂ on the surface of SnS₂ induced by the synergistic effect of Al doping, S vacancies, and the expanded interlayer spacing, which is directly revealed by the in-suit measurement based on near-ambient pressure X-ray photoelectronic spectroscopy (NAP-XPS). Furthermore, to identify the role of Al doping, S vacancies, and the expanded interlayer spacing in enhancing the NO₂ sensing properties, a series of comparative experiments and theoretical calculations were performed.

Two-Dimensional GeC2 with Tunable Electronic and Carrier Transport Properties and a High Current ON/OFF Ratio

In this study, we present that 2D tetrahex-GeC₂ materials possess novel electronic and carrier transport properties based on density functional theory computations combined with the nonequilibrium Green's function method. We show that under the 4% (-4%) in-plane expansion (compression) along the a-direction (b-direction) of the tetrahex-GeC₂ monolayer, the bandgap can be enlarged to a desirable 1.26 eV (1.32 eV), close to that of silicon. The carrier transport properties of both the sub-10 nm tetrahex-GeC₂ monolayer and the bilayer show strong anisotropy within the bias from -1 to 1 V. The current ON (a-direction)/OFF (b-direction) ratio amounts to 10⁵ for the tetrahex-GeC₂ monolayer. A striking negative differential conductance arises with the maximum I_peak/I_valley on the order of 10⁴ under the 4% uniaxial expansion along the b-direction of the tetrahex-GeC₂ monolayer. Overall, the 2D tetrahex-GeC₂ monolayer and bilayer possess highly tunable electronic and carrier transport properties under uniaxial strain, which can be exploited for potential applications in nanoelectronics.

Impact of ion beam irradiation on two-dimensional MoS2: a molecular dynamics simulation study

Two-dimensional (2D) materials such as MoS₂have extraordinary properties and significant application potential in electronics, optoelectronics, energy storage, bioengineering, etc. To realize the numerous application potential, it is needed to modulate the structure and properties of these 2D materials, for which ion beam irradiation has obvious advantages. This research adopted classical molecular dynamics simulations to study the sputtering of atoms in 2D MoS₂, defect formation and the control rule under Ar ion beam irradiation, considering the influence of ion irradiation parameters (i.e., ion beam energy, ion dose), layer number of 2D MoS₂, substrate. Furthermore, the uniaxial mechanical performance of the ion-irradiated nanostructures was investigated for actual applications loading with mechanical stress/strain. This research could provide important theoretical support for fabricating high-performance 2D MoS₂-based nanodevices by ion beam irradiation method.

Doping-free bandgap tunability in Fe2O3 nanostructured films

A tunable bandgap without doping is highly desirable for applications in optoelectronic devices. Herein, we develop a new method which can tune the bandgap without any doping. In the present research, the bandgap of Fe₂O₃ nanostructured films is simply tuned by changing the synthesis temperature. The Fe₂O₃ nanostructured films are synthesized on ITO/glass substrates at temperatures of 1100, 1150, 1200, and 1250 °C using the hot filament metal oxide vapor deposition (HFMOVD) and thermal oxidation techniques. The Fe₂O₃ nanostructured films contain two mixtures of Fe²⁺ and Fe³⁺ cations and two trigonal (α) and cubic (γ) phases. The increase of the Fe²⁺ cations and cubic (γ) phase with the elevated synthesis temperatures lifted the valence band edge, indicating a reduction in the bandgap. The linear bandgap reduction of 0.55 eV without any doping makes the Fe₂O₃ nanostructured films promising materials for applications in bandgap engineering, optoelectronic devices, and energy storage devices.

Self-Powered Sensors: New Opportunities and Challenges from Two-Dimensional Nanomaterials

Nanomaterials have gained considerable attention over the last decade, finding applications in emerging fields such as wearable sensors, biomedical care, and implantable electronics. However, these applications require miniaturization operating with extremely low power levels to conveniently sense various signals anytime, anywhere, and show the information in various ways. From this perspective, a crucial field is technologies that can harvest energy from the environment as sustainable, self-sufficient, self-powered sensors. Here we revisit recent advances in various self-powered sensors: optical, chemical, biological, medical, and gas. A timely overview is provided of unconventional nanomaterial sensors operated by self-sufficient energy, focusing on the energy source classification and comparisons of studies including self-powered photovoltaic, piezoelectric, triboelectric, and thermoelectric technology. Integration of these self-operating systems and new applications for neuromorphic sensors are also reviewed. Furthermore, this review discusses opportunities and challenges from self-powered nanomaterial sensors with respect to their energy harvesting principles and sensing applications.

Towards field-effect controlled graphene-enhanced Raman spectroscopy of cobalt octaethylporphyrin molecules

During the last decade graphene-enhanced Raman spectroscopy has proven to be a powerful tool to detect and analyze minute amounts of molecules adsorbed on graphene. By using a graphene-based field-effect device the unique opportunity arises to gain a deeper insight into the coupling of molecules and graphene as graphene's Fermi level can be controlled by the transistor`s gate voltage. However, the fabrication of such a device comes with great challenges because of contaminations stemming from processing the device inevitably prevent direct adsorption of the molecules onto graphene rendering it unsuitable for field-effect controlled graphene-enhanced Raman spectroscopy measurements/experiments. In this work, we solve this problem by establishing two different fabrication procedures for such devices, both of which are in addition compatible with large area and scalable production requirements. As a first solution, selective argon cluster irradiation is shown to be an efficient way to remove resist residues after processing. We provide evidence that after the irradiation the enhancement of the molecular Raman signal can indeed be measured, demonstrating that this procedure cleans graphene's surface sufficiently enough for direct molecular adsorption. As a second solution, we have developed a novel stacking method to encapsulate the molecules in between two graphene layers to protect the underlying graphene and molecular layer from the harsh conditions during the photolithography process. This method combines the advantages of dry stacking, which leads to a perfectly clean interface, and wet stacking processes, which can easily be scaled up for large area processing. Both approaches yield working graphene transistors with strong molecular Raman signals stemming from cobalt octaehtylporphyrin, a promising and prototypical candidate for spintronic applications, and are therefore suitable for graphene based molecular sensing applications.

Recent Advances in Electrical Doping of 2D Semiconductor Materials: Methods, Analyses, and Applications

Two-dimensional materials have garnered interest from the perspectives of physics, materials, and applied electronics owing to their outstanding physical and chemical properties. Advances in exfoliation and synthesis technologies have enabled preparation and electrical characterization of various atomically thin films of semiconductor transition metal dichalcogenides (TMDs). Their two-dimensional structures and electromagnetic spectra coupled to bandgaps in the visible region indicate their suitability for digital electronics and optoelectronics. To further expand the potential applications of these two-dimensional semiconductor materials, technologies capable of precisely controlling the electrical properties of the material are essential. Doping has been traditionally used to effectively change the electrical and electronic properties of materials through relatively simple processes. To change the electrical properties, substances that can donate or remove electrons are added. Doping of atomically thin two-dimensional semiconductor materials is similar to that used for silicon but has a slightly different mechanism. Three main methods with different characteristics and slightly different principles are generally used. This review presents an overview of various advanced doping techniques based on the substitutional, chemical, and charge transfer molecular doping strategies of graphene and TMDs, which are the representative 2D semiconductor materials.

Enhanced Electrical Performance of Monolayer MoS2 with Rare Earth Element Sm Doping

Rare earth (RE) element-doped two-dimensional (2D) transition metal dichalcogenides (TMDCs) with applications in luminescence and magnetics have received considerable attention in recent years. To date, the effect of RE element doping on the electronic properties of monolayer 2D-TMDCs remains unanswered due to challenges including the difficulty of achieving valid monolayer doping and introducing RE elements with distinct valence and atomic configurations. Herein, we report a unique strategy to grow the Sm-doped monolayer MoS₂ film by using an atmospheric pressure chemical vapor deposition method with the substrate face down on top of the growth source. A stable monolayer triangular Sm-doped MoS₂ was achieved. The threshold voltage of an Sm-doped MoS₂-based field effect transistor (FET) moved from -12 to 0 V due to the p-type character impurity state introduced by Sm ions in monolayer MoS₂. Additionally, the electrical performance of the monolayer MoS₂-based FET was improved by RE element Sm doping, including a 500% increase of the on/off current ratio and a 40% increase of the FET's mobility. The electronic property enhancement resulted from Sm doping MoS₂, which led internal lattice strain and changes in Fermi energy levels. These findings provide a general approach to synthesize RE element-doped monolayer 2D-TMDCs and to enrich their applications in electrical devices.

Surface modification of titanium carbide MXene monolayers (Ti2C and Ti3C2) via chalcogenide and halogenide atoms

Inspired by the recent successful growth of Ti2C and Ti3C2 monolayers, here, we investigate the structural, electronic, and mechanical properties of functionalized Ti2C and Ti3C2 monolayers by means of density functional theory calculations. The results reveal that monolayers of Ti2C and Ti3C2 are dynamically stable metals. Phonon band dispersion calculations demonstrate that two-surface functionalization of Ti2C and Ti3C2via chalcogenides (S, Se, and Te), halides (F, Cl, Br, and I), and oxygen atoms results in dynamically stable novel functionalized monolayer materials. Electronic band dispersions and density of states calculations reveal that all functionalized monolayer structures preserve the metallic nature of both Ti2C and Ti3C2 except Ti2C-O2, which possesses the behavior of an indirect semiconductor via full-surface oxygen passivation. In addition, it is shown that although halide passivated Ti3C2 structures are still metallic, there exist multiple Dirac-like cones around the Fermi energy level, which indicates that semi-metallic behavior can be obtained upon external effects by tuning the energy of the Dirac cones. In addition, the computed linear-elastic parameters prove that functionalization is a powerful tool in tuning the mechanical properties of stiff monolayers of bare Ti2C and Ti3C2. Our study discloses that the electronic and structural properties of Ti2C and Ti3C2 MXene monolayers are suitable for surface modification, which is highly desirable for material property engineering and device integration.

Mechanisms and Applications of Steady-State Photoluminescence Spectroscopy in Two-Dimensional Transition-Metal Dichalcogenides

Two-dimensional (2D) transition-metal dichalcogenide (TMD) semiconductors exhibit many important structural and optoelectronic properties, such as strong light-matter interactions, direct bandgaps tunable from visible to near-infrared regions, flexibility and atomic thickness, quantum-confinement effects, valley polarization possibilities, and so on. Therefore, they are regarded as a very promising class of materials for next-generation state-of-the-art nano/micro optoelectronic devices. To explore different applications and device structures based on 2D TMDs, intrinsic material properties, their relationships, and evolutions with fabrication parameters need to be deeply understood, very often through a combination of various characterization techniques. Among them, steady-state photoluminescence (PL) spectroscopy has been extensively employed. This class of techniques is fast, contactless, and nondestructive and can provide very high spatial resolution. Therefore, it can be used to obtain optoelectronic properties from samples of various sizes (from microns to centimeters) during the fabrication process without complex sample preparation. In this article, the mechanism and applications of steady-state PL spectroscopy in 2D TMDs are reviewed. The first part of this review details the physics of PL phenomena in semiconductors and common techniques to acquire and analyze PL spectra. The second part introduces various applications of PL spectroscopy in 2D TMDs. Finally, a broader perspective is discussed to highlight some limitations and untapped opportunities of PL spectroscopy in characterizing 2D TMDs.

Graphdiyne-Based Flexible Photodetectors with High Responsivity and Detectivity

Graphdiyne (GDY), a newly emerging 2D carbon allotrope, has been widely explored in various fields owing to its outstanding electronic properties such as the intrinsic bandgap and high carrier mobility. Herein, GDY-based photoelectrochemical-type photodetection is realized by spin-coating ultrathin GDY nanosheets onto flexible poly(ethylene terephthalate) (PET) substrates. The GDY-based photodetectors (PDs) demonstrate excellent photo-responsive behaviors with high photocurrent (P_ph , 5.98 µA cm^{- 2} ), photoresponsivity (R_ph , 1086.96 µA W^{- 1} ), detectivity (7.31 × 10¹⁰ Jones), and excellent long-term stability (more than 1 month). More importantly, the PDs maintain an excellent P_ph after 1000 cycles of bending (4.45 µA cm^{- 2} ) and twisting (3.85 µA cm^{- 2} ), thanks to the great flexibility of the GDY structure that is compatible with the flexible PET substrate. Density functional theory (DFT) calculations are adopted to explore the electronic characteristics of GDY, which provides evidence for the performance enhancement of GDY in alkaline electrolyte. In this way, the GDY-based flexible PDs can enrich the fundamental study of GDY and pave the way for the exploration of GDY heterojunction-based photodetection.

Transition Metal Dichalcogenides for the Application of Pollution Reduction: A Review

The material characteristics and properties of transition metal dichalcogenide (TMDCs) have gained research interest in various fields, such as electronics, catalytic, and energy storage. In particular, many researchers have been focusing on the applications of TMDCs in dealing with environmental pollution. TMDCs provide a unique opportunity to develop higher-value applications related to environmental matters. This work highlights the applications of TMDCs contributing to pollution reduction in (i) gas sensing technology, (ii) gas adsorption and removal, (iii) wastewater treatment, (iv) fuel cleaning, and (v) carbon dioxide valorization and conversion. Overall, the applications of TMDCs have successfully demonstrated the advantages of contributing to environmental conversation due to their special properties. The challenges and bottlenecks of implementing TMDCs in the actual industry are also highlighted. More efforts need to be devoted to overcoming the hurdles to maximize the potential of TMDCs implementation in the industry.

Carbon-Phosphorus Bonds-Enriched 3D Graphene by Self-Sacrificing Black Phosphorus Nanosheets for Elevating Capacitive Lithium Storage

Heteroatom-doping engineering has been verified as an effective strategy to tailor the electronic and chemical properties of materials. The high amount doping of nonmetal atoms to achieve desired performance, however, is always a grand challenge. Herein, a new strategy to achieve ultrahigh-level doping of phosphorus in a 3D graphene skeleton is proposed by sacrificing heterostructured two-dimensional black phosphorus on graphene. Via this approach, the phosphorus-loading in graphene hydrogel reached a record of 4.84 at. %, together with the formation of tunable pores of size 1.7-17.5 nm in graphene. During reaction kinetic analysis, the highly phosphorus-doped 3D graphene hydrogel anode exhibited more favorable capacitive-controlled ion storage behaviors, leading to a specific capacity as high as 1000 mA h g^-1 after 1700 cycles, which is superior to the pristine graphene hydrogel electrode. This simple but effective phosphorization offers an effective doping strategy for producing ultrahigh-level phosphorous doping but avoids the usual use of toxic phosphorous precursors. Furthermore, the modulation on the activation process over cycling investigated in this work gives us a new insight into designing stable anodes for carbonaceous electrode materials.

Synthesis and optoelectronics of mixed-dimensional Bi/Te binary heterostructures

Mixed-dimensional binary heterostructures, especially 0D/2D heterostructures, have attracted significant attention due to their unique physical properties. In this contribution, 0D bismuth quantum dots (Bi QDs, VA) are immobilized onto 2D Te nanosheets (Te NSs, VIA) to prepare Bi QDs/Te NSs binary heterostructures (Bi/Te) through a facile and cost-effective hydrothermal method. The results from both experiments and density functional theory (DFT) calculations demonstrate the enhanced photo-response behaviors of Bi/Te-based photoelectrochemical (PEC)-type photodetectors (PDs). The as-prepared PDs exhibit a high photocurrent of 18.21 μA cm^-2, significantly higher than those of previously reported pristine Bi QD and Te NS-based PDs. The PDs are further demonstrated to have excellent self-power capability and long-term stability over 30 days. Additionally, the obtained 786 fs pulse output signal in the telecommunications band reveals the great potential of Bi/Te for ultrafast photonic devices. It is believed that such VA/VIA binary heterostructures provide opportunities for developing multifunctional optoelectronic devices for nano-science applications.

Dual-Additive Assisted Chemical Vapor Deposition for the Growth of Mn-Doped 2D MoS2 with Tunable Electronic Properties

Doping of bulk silicon and III-V materials has paved the foundation of the current semiconductor industry. Controlled doping of 2D semiconductors, which can also be used to tune their bandgap and type of carrier thus changing their electronic, optical, and catalytic properties, remains challenging. Here the substitutional doping of nonlike element dopant (Mn) at the Mo sites of 2D MoS₂ is reported to tune its electronic and catalytic properties. The key for the successful incorporation of Mn into the MoS₂ lattice stems from the development of a new growth technology called dual-additive chemical vapor deposition. First, the addition of a MnO₂ additive to the MoS₂ growth process reshapes the morphology and increases lateral size of Mn-doped MoS₂ . Second, a NaCl additive helps in promoting the substitutional doping and increases the concentration of Mn dopant to 1.7 at%. Because Mn has more valance electrons than Mo, its doping into MoS₂ shifts the Fermi level toward the conduction band, resulting in improved electrical contact in field effect transistors. Mn doping also increases the hydrogen evolution activity of MoS₂ electrocatalysts. This work provides a growth method for doping nonlike elements into 2D MoS₂ and potentially many other 2D materials to modify their properties.

Nanohybrids of a MXene and transition metal dichalcogenide for selective detection of volatile organic compounds

Two-dimensional transition metal carbides/nitrides, known as MXenes, have been recently receiving attention for gas sensing. However, studies on hybridization of MXenes and 2D transition metal dichalcogenides as gas-sensing materials are relatively rare at this time. Herein, Ti3C2Tx and WSe2 are selected as model materials for hybridization and implemented toward detection of various volatile organic compounds. The Ti3C2Tx/WSe2 hybrid sensor exhibits low noise level, ultrafast response/recovery times, and good flexibility for various volatile organic compounds. The sensitivity of the hybrid sensor to ethanol is improved by over 12-fold in comparison with pristine Ti3C2Tx. Moreover, the hybridization process provides an effective strategy against MXene oxidation by restricting the interaction of water molecules from the edges of Ti3C2Tx. An enhancement mechanism for Ti3C2Tx/WSe2 heterostructured materials is proposed for highly sensitive and selective detection of oxygen-containing volatile organic compounds. The scientific findings of this work could guide future exploration of next-generation field-deployable sensors.

Plasma-Doped Si Nanosheets for Transistor and p-n Junction Application

Since the discovery of graphene, layered transition metal dichalcogenides (TMDs) have been considered promising materials for applications in various fields because of their fascinating structural features and physical properties. Doping in semiconducting TMDs is essential for their practical application. In this regard, two-dimensional (2D) Si materials have emerged as a key component of 2D electronic, optics, sensing, and spintronic devices because of their complementary metal-oxide-semiconductor (CMOS) compatibility, high-quality oxide formation, moderated bandgap, and well-established doping techniques. Here, we report the tuning of the electronic properties of Si nanosheets (NSs) using a plasma-doping technique. Using this doping process, we fabricated p-n homojunction diodes and transistors with Si NSs. The estimated high ON/OFF ratio of ∼10⁶ and field-effect hole mobility of 329 cm² V^-1 s^-1 suggest a high crystal quality of the Si NSs. We also demonstrate vertically stacked heterostructured p-n junction diodes with MoS₂, which exhibit rectifying properties and excellent light response.

Two-Dimensional Materials in Biosensing and Healthcare: From In Vitro Diagnostics to Optogenetics and Beyond

Since the isolation of graphene in 2004, there has been an exponentially growing number of reports on layered two-dimensional (2D) materials for applications ranging from protective coatings to biochemical sensing. Due to the exceptional, and often tunable, electrical, optical, electrochemical, and physical properties of these materials, they can serve as the active sensing element or a supporting substrate for diverse healthcare applications. In this review, we provide a survey of the recent reports on the applications of 2D materials in biosensing and other emerging healthcare areas, ranging from wearable technologies to optogenetics to neural interfacing. Specifically, this review provides (i) a holistic evaluation of relevant material properties across a wide range of 2D systems, (ii) a comparison of 2D material-based biosensors to the state-of-the-art, (iii) relevant material synthesis approaches specifically reported for healthcare applications, and (iv) the technological considerations to facilitate mass production and commercialization.

High-performance sub-10 nm monolayer Bi2O2Se transistors

A successful two-dimensional (2D) semiconductor successor of silicon for high-performance logic in the post-silicon era should have both excellent performance and air stability. However, air-stable 2D semiconductors with high performance were quite elusive until the air-stable Bi2O2Se with high electron mobility was fabricated very recently (J. Wu, H. Yuan, M. Meng, C. Chen, Y. Sun, Z. Chen, W. Dang, C. Tan, Y. Liu, J. Yin, Y. Zhou, S. Huang, H. Q. Xu, Y. Cui, H. Y. Hwang, Z. Liu, Y. Chen, B. Yan and H. Peng, Nat. Nanotechnol., 2017, 12, 530). Herein, we predict the performance limit of the monolayer (ML) Bi2O2Se metal oxide semiconductor field-effect transistors (MOSFETs) by using ab initio quantum transport simulation at the sub-10 nm gate length. The on-current, delay time, and power-delay product of the optimized n- and p-type ML Bi2O2Se MOSFETs can reach or nearly reach the high performance requirements of the International Technology Roadmap for Semiconductors (ITRS) until the gate lengths are scaled down to 2 and 3 nm, respectively. The large on-currents of the n- and p-type ML Bi2O2Se MOSFETs are attributed to either the large effective carrier velocity (n-type) or the large density of states near the valence band maximum and special shape of the band structure (p-type). A new avenue is thus opened for the continuation of Moore's law down to 2-3 nm by utilizing ML Bi2O2Se as the channel.

Band structure engineering of SnS2/polyphenylene van der Waals heterostructure via interlayer distance and electric field

Constructing a van der Waals heterostructure (vdWH) by stacking different two-dimensional (2D) materials has been considered to be an effective strategy to obtain the desired properties.

Graphene and Other 2D Layered Hybrid Nanomaterial-Based Films: Synthesis, Properties, and Applications

This Special Issue contains a series of reviews and research articles demonstrating actual perspectives and future trends of 2D-based materials for the generation of functional films, coatings, and hybrid interfaces with controlled morphology and structure.

Direct Patterning of p-Type-Doped Few-layer WSe2 Nanoelectronic Devices by Oxidation Scanning Probe Lithography

Direct, robust, and high-resolution patterning methods are needed to downscale the lateral size of two-dimensional materials to observe new properties and optimize the overall processing of these materials. In this work, we report a fabrication process where the initial microchannel of a few-layer WSe₂ field-effect transistor is treated by oxygen plasma to form a self-limited oxide layer on top of the flake. This thin oxide layer has a double role here. First, it induces the so-called p-doping effect in the device. Second, it enables the fabrication of oxide nanoribbons with controlled width and depth by oxidation scanning probe lithography (o-SPL). After the removal of the oxides by deionized H₂O etching, a nanoribbon-based field-effect transistor is produced. Oxidation SPL is a direct writing technique that minimizes the use of resists and lithographic steps. We have applied this process to fabricate a 5 nm thick WSe₂ field-effect transistor, where the channel consists in an array of 5 parallel 350 nm half-pitch nanoribbons. The electrical measurements show that the device presents an improved conduction level compared to the starting thin-layer transistor and a positive threshold voltage shift associated to the p-doping treatment. The method enables to pattern devices with sub-50 nm feature sizes. We have patterned an array of 10 oxide nanowires with 36 nm half-pitch by oxidation SPL.

Two-dimensional semiconductors pave the way towards dopant-based quantum computing

Since the proposal in 1998 to build a quantum computer using dopants in silicon as qubits, much progress has been made in the nanofabrication of semiconductors and the control of charge and spins in single dopants. However, an important problem remains unsolved, namely the control over exchange interactions and tunneling between two donors, which presents a peculiar oscillatory behavior as the dopants relative positions vary at the scale of the lattice parameter. Such behavior is due to the valley degeneracy in the conduction band of silicon, and does not occur when the conduction-band edge is at k = 0. We investigate the possibility of circumventing this problem by using two-dimensional (2D) materials as hosts. Dopants in 2D systems are more tightly bound and potentially easier to position and manipulate. Moreover, many of them present the conduction band minimum at k = 0, thus no exchange or tunnel coupling oscillations. Considering the properties of currently available 2D semiconductor materials, we access the feasibility of such a proposal in terms of quantum manipulability of isolated dopants (for single qubit operations) and dopant pairs (for two-qubit operations). Our results indicate that a wide variety of 2D materials may perform at least as well as, and possibly better, than the currently studied bulk host materials for donor qubits.

Hierarchical SnS2/SnO2 nanoheterojunctions with increased active-sites and charge transfer for ultrasensitive NO2 detection

SnS2 nanosheets with unique properties are excellent candidate materials for fabricating high-performance NO2 gas sensors. However, serious restacking and aggregation during sensor fabrication have greatly impacted the sensing response. In this study, flower-like hierarchical SnS2 was prepared by a simple microwave method and partially thermally oxidized to form hierarchical SnS2/SnO2 nanocomposites to further improve the sensing performance at low operating temperature. The fabricated SnS2/SnO2 sensor exhibited ultrahigh response (resistance ratio = 51.1) toward 1 ppm NO2 at 100 °C, roughly 10.2 times higher than that of pure SnS2 nanoflowers. The excellent and enhanced NO2 sensing performances of hierarchical SnS2/SnO2 nanocomposites were attributed to the novel hierarchical structure of SnS2 and the nanoheterojunction between SnS2 and the ultrafine SnO2 nanoparticles. The SnS2/SnO2 sensors also exhibited excellent selectivity and reliable repeatability. The simple fabrication of high performance sensing materials may facilitate the large-scale production of NO2 gas sensors.

Group 6 transition metal dichalcogenide nanomaterials: synthesis, applications and future perspectives

Group 6 transition metal dichalcogenides (G6-TMDs), most notably MoS₂, MoSe₂, MoTe₂, WS₂ and WSe₂, constitute an important class of materials with a layered crystal structure. Various types of G6-TMD nanomaterials, such as nanosheets, nanotubes and quantum dot nano-objects and flower-like nanostructures, have been synthesized. High thermodynamic stability under ambient conditions, even in atomically thin form, made nanosheets of these inorganic semiconductors a valuable asset in the existing library of two-dimensional (2D) materials, along with the well-known semimetallic graphene and insulating hexagonal boron nitride. G6-TMDs generally possess an appropriate bandgap (1-2 eV) which is tunable by size and dimensionality and changes from indirect to direct in monolayer nanosheets, intriguing for (opto)electronic, sensing, and solar energy harvesting applications. Moreover, rich intercalation chemistry and abundance of catalytically active edge sites make them promising for fabrication of novel energy storage devices and advanced catalysts. In this review, we provide an overview on all aspects of the basic science, physicochemical properties and characterization techniques as well as all existing production methods and applications of G6-TMD nanomaterials in a comprehensive yet concise treatment. Particular emphasis is placed on establishing a linkage between the features of production methods and the specific needs of rapidly growing applications of G6-TMDs to develop a production-application selection guide. Based on this selection guide, a framework is suggested for future research on how to bridge existing knowledge gaps and improve current production methods towards technological application of G6-TMD nanomaterials.

Light-Emitting Transition Metal Dichalcogenide Monolayers under Cellular Digestion

2D materials cover a wide spectrum of electronic properties. Their applications are extended from electronic, optical, and chemical to biological. In terms of biomedical uses of 2D materials, the interactions between living cells and 2D materials are of paramount importance. However, biointerfacial studies are still in their infancy. This work studies how living organisms interact with transition metal dichalcogenide monolayers. For the first time, cellular digestion of tungsten disulfide (WS₂ ) monolayers is observed. After digestion, cells intake WS₂ and become fluorescent. In addition, these light-emitting cells are not only viable, but also able to pass fluorescent signals to their progeny cells after cell division. By combining synthesis of 2D materials and a cell culturing technique, a procedure for monitoring the interactions between WS₂ monolayers and cells is developed. These observations open up new avenues for developing novel cellular labeling and imaging approaches, thus triggering further studies on interactions between 2D materials and living organisms.

Chemical sensing with 2D materials

During the last decade, two-dimensional materials (2DMs) have attracted great attention due to their unique chemical and physical properties, which make them appealing platforms for diverse applications in sensing of gas, metal ions as well as relevant chemical entities.

Inkjet printed nanomaterial based flexible radio frequency identification (RFID) tag sensors for the internet of nano things

The Internet of Things (IoT) has limitless possibilities for applications in the entire spectrum of our daily lives, from healthcare to automobiles to public safety.